US3124489A - Method of continuously growing thin strip crystals - Google Patents

Method of continuously growing thin strip crystals Download PDF

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Publication number
US3124489A
US3124489A US3124489DA US3124489A US 3124489 A US3124489 A US 3124489A US 3124489D A US3124489D A US 3124489DA US 3124489 A US3124489 A US 3124489A
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passage
crystal
ribbon
die
melt
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]

Definitions

  • This invention relates to the growing of single crystal substances in the for-tn of thin strips. More particularly, it relates to the growing of single crystals of a substance having relatively high surface tension, such as germanium, in ribbon form.
  • single crystals intended to be used in the production of semiconductor devices have been grown in the form of relatively thick ingots, one inch or more in diameter and of a length up to 12 inches or more.
  • Emphasis has been placed on growing such crystals with closely controlled resistivities, a relatively low number of lattice imperfections, and a high degree of purity except for those impurities intentionally added for the purpose of controlling the conductivity type of the product.
  • a high degree of perfection has been achieved in growing these crystals, and semiconductor device production has been based on the successful making of relatively large crystals which may weigh up to several pounds.
  • Each of the slices must then be ground flat and etched to a'th-ickness approaching the thickness of the tiny pellets that will be used in the devices. After reducing the thickness of the slice, his then diced into individual pellets whcih are further etched to the exact thickness desired.
  • a nucleating means such as the end of a copper wire, or a seed crystal, suitably oriented
  • One object of the present invention is to provide a method of growing single crystals of germanium in thin ribbon form.
  • Another object of the invention is to provide an improved method of growing thin, ribbon-like crystals of a substance where the substance is a material having relatively high surface tension.
  • a further object of the invention is to provide an improved method of growing long, thin crystals of germanium suitable for economical use in manufacturing semiconductor devices.
  • FIGURE 1 is a partially cross-section elevation view of one [form of apparatus suitable for carrying out the method of the present invention
  • FIGURE 2 is a plan view of part of the apparatus of FIGURE 1, and
  • FIGURE 3 is a magnified detail view of part of the apparatus of FIGURE 1.
  • a feature of the present invention is a method of preparing a strip,having predetermined transverse crosssection area and shape, of single crystal material.
  • the method comprises, in brief, first, maintaining a melt of the material, and applying pressure to the melt such that a portion of it is extruded into a restrictive passage or die having a particular transverse cross-section area and shape.
  • the cooling stream of gas is preferably directed against both sides of the emergent strip in a particular manner and the rate of pulling relative to the rate of supplying molten material to the die is adjusted so as to obtain the desired cross-section area and shape, and pressure is continuously applied to the melt to continuously extrude additional material into the die passage to replace the material growing into the crystal.
  • Apparatus for carrying out the method of the invention may comprise, as shoyn in the drawing, a heated reservoir for containing a quantity of molten material and including a die or restricted passageway at one end thereof, means for extruding molten material at a desired rate into the passageway, means for solidifying the molten material as it emerges from the die, and means for supporting and withdrawingthe ribbon-like crystal which is being grown.
  • the means for containing the molten material comprises a carbon cylinder 2 supported in an upright position on a pedestal 4 which, in turn, rests on a base plate 5.
  • a carbon die 6 At the upper end of the cylinder is a carbon die 6 having a rectangular shaped passage 8, transverse dimensions of which are .156" in length by .006" in width.
  • the upper exterior portion of the cylinder 2 is threaded and a threaded cap member 9 is provided to hold the die 6 in place on the top of the cylinder.
  • the cylinder reservoir has an internal diameter of /8.
  • the carbon cylinder and its contents are heated by means of an RF heating coil 10, which surrounds at least the upper portion of the cylinder.
  • Means for extruding the molten material into the die passage comprises a carbon piston 12 fitting snugly within the bore of the carbon cylinder 2.
  • Driving means for the piston comprises a drive shaft 14- the upper end of which abuts the lower end of the piston and the lower portion of which is threaded or provided with a rack.
  • the upper portion of the drive shaft extends'through a sleeve 16 in the base plate 5.
  • Meshing with the threaded portion of the drive shaft is a worm, or pinion, gear 18 driven through cogs 2t? and 22 from a variable speed motor (not shown). Rotation of the worm gear in one direction of the other causes corresponding upward or downward movement of the drive shaft.
  • Means for solidifying the molten material as it leaves the die comprises two gas jets 24 and 26 having openings disposed on either side of the exit from the die passage 8.
  • openings are axially perpendicular to the longitudinal dimension of the die passage and their diameters are preferably appreciably less than this longitudinal dimension.
  • the jets are connected through a pipe 28 to a gas supply (not shown).
  • Means for withdrawing the completed crystal comprises two rollers 3t and 32 spaced a short distance above the die exit with means for driving the rollers at a desired speed.
  • This means comprises a shaft 33, the lower end of which is connected to the worm gear-18 and the upper end of whichis connected through gears (not shown) to at least the roller 30.
  • gears not shown
  • the rollers may be provided with resilient surfaces.
  • closure member which may comprise a piece of rubberlike plastic 38 having a slit 39 therein to permit the exit of the crystal ribbon.
  • Operation of the above apparatus for growing a crystal of germanium is as follows.
  • a quantity of germanium 4th having the desired type of conductivity and purity is brought to a molten condition within the cylinder 2 by application of power to the RF heating coil 10.
  • the molten germanium is brought to a temperature slightly above its melting point.
  • the top of the piston 12, at the beginning of the run, is just entering the lower end of the cylinder.
  • the drive shaft 14 is then advanced by rotation of the worm gear 18 so that the shaft moves upwardly a short distance, which, in turn, moves the piston upwardly a correspondingly short distance and extrudes some of the germanium up into the die passage 8 so that it is about even with the top exit of the passage.
  • the upper portion of the seed is engaged between the rollers 3t and 32.
  • Gas pressure is meanwhile turned on so that a stream of relatively inert gas (nitrogen, for example), at room temperature, emerges from the jets 24 and 26.
  • This cooling gas withdraws heat rapidly from the seed crystal and prevents the seed from melting and dropping off into the molten germanium.
  • the cooling gas also causes the molten germanium to start solidifying attached to the seed crystal and, as soon as this action begins, the rollers 30 and 32 are rotated slowly so that the seed begins to rise away from the die and a crystal of germanium 42 continuously grows attached to the lower end of the seed.
  • the streams of cooling nitrogen emerging from the jets 24 and 26 are directed at the centers of the opposing faces of the crystal ribbon 42 at a level slightly above the exit of die passage 8.
  • the center of the strip is thus cooled more rapidly than the edges.
  • This causes solidification of the growing crystal to occur at a slightly lower level in the central portion of the crystal ribbon than at the edges, and the liquid-solid interface 44 of the growing crystal is thus caused to be concave downwardly in the transverse longitudinal dimension of the die and ribbon. Because of the shape of this interface, any tendency toward unwanted nucleation at the edges of the ribbon is inhibited. Spurious crystals which may start to grow will grow outward and will be halted immediately at the edges of the ribbon. Also, as shown in the drawing, the liquid-solid interface 44 (FIG. 3) is concave downwardly in the thickness dimension of the ribbon.
  • the growing crystal takes the same transverse cross-sectional shape and area as the exit of the die passage.
  • the crystal is being grown by continuously withdrawing germanium from the die slot, upward motion is continuously imparted to the piston 12 at a rate calculated to just keep the liquid level very close to the upper exit of the die.
  • the rate of feed of the molten germanium to the die and the rate of travel of the ribbon 42 can be coordinated as desired.
  • the exact point at which the liquid solidifies must be very closely controlled by careful balance between the rate of feeding. the molten germanium to the die, the rate of withdrawal of the crystal, and the rate of heat removal from the crystal.
  • the rate of heat removal is too slow, the liquid level will rise above the die exit and the cross-sectional transverse shape will become deformed due to surface tension acting on the liquid column. If rate of heat removal is too rapid, the liquid-solid interface will descend too far within the die passage, the crystal will begin to solidify at too low a level and will jam in the die.
  • Crystal can be grown continuously until the germanium in the reservoir of the cylinder is exhausted.
  • the crystal ribbon which is grown is quite flexible and can be wound on a reel, if desired.
  • the ribbon can be made quite uniform in cross-section by careful control of the various factors which have been described.
  • the length of ribbon which is produced can be increased merely by increasing the size of the cylinder bore.
  • the ribbon crystal which is grown is similar in all respects to the finished material used for semiconductor devices by cutting slices from large ingots except that it has the further advantage of much more uniform resistivity. Because of the rapidity of growth of the crystal, the segregation constants of the impurities that are present have little effect on the proportion of the impurity remaining in the liquid as opposed to the amount going into the solid.
  • the die in the example had a width of .006, this width can be decreased still further and the die can be made of other materials, such as quartz, which are capable of taking a higher polish and thereby producing smoother surfaced crystals, as Well as Wearing better.
  • a method of preparing a ribbon, having predetermined transverse cross-sectional area and shape, of single crystal material comprising maintaining a melt of said material, applying pressure to said melt such that a portion thereof flows into a restrictive passage having an exit opening of approximately said area and shape, contacting a nucleating means to said portion, withdrawing said nucleating means at a predetermined rate while directing a cooling stream of gas which is inert with respect to said material, adjacent the exit of said passage so as to maintain the liquid level at the exit of said passage and to cause said molten material to solidify Within said passage and form a continuous, emerging, single crystal ribbon having said predetermined transverse cross-section area and shape and attached to said nucleating means, and continuing to apply pressure to said melt to supply molten material to said passage at the same rate said ribbon is solidifying.
  • a method of preparinga ribbon of single crystal substance comprising maintaining a melt of said substance, extruding a portion of said melt into a restrictive passage of elongated rectangular transverse cross section, contacting an edge of a thin, flat seed crystal to said portion, maintaining the temperature at said passage sufficiently low to cause said molten substance to solidify within said passage at the exit thereof and form a single crystal attached to said seed crystal, and withdrawing said seed crystal at a predetermined rate so as to grow said attached crystal in ribbon form while continuing to extrude said melt into said passage at a rate corresponding to said predetermined rate, and maintaining the interface between said melt and said crystal within said passage.
  • a method of preparing a single crystal of germanium in relatively thin, elongated form of a desired trans verse cross-sectional area and shape comprising maintaining a melt of said germanium, applying pressure to said melt such that a portion thereof flows into a restrictive passage having said desired I cross-sectional area and shape, contacting a nucleating means to said portion, maintainingthe temperature at said passage at a level to cause said molten germanium to solidify within said passage at the exit thereof and form a single crystal attached to said nucleating means, and withdrawing said nucleating means at a predetermined rate so as to grow said attached crystal with said desired transverse cross-sectional area and shape while continuing to cause said melt to flow into said passage at a rate sufiicient to maintain said predetermined rate of crystal growth, and maintaining the interface between said melt and said crystal within said passage.
  • a method of preparing a ribbon, having predetermined transverse cross-sectional area and shape,'of single crystal material comprising maintaining a melt of said material, applying pressure to said melt such that a portion thereof flows into a restrictive passage having an exit opening of approximately said area and shape, contacting a nucleating means to said portion, withdrawing said nucleating means at a predetermined rate while directing a cooling stream of gas inert with respect to said material, adjacent the exit of said passage so as to cause said molten material to solidify within said passage at the exit thereof and form a continuous, emerging, single crystal ribbon attached to said nucleating means, said gas being directed at opposing faces of said ribbon such that said ribbon has said predetermined transverse crosssectional area and shape, and continuing to apply pressure to said melt to supply molten material to said passage at the same rate said ribbon is solidifying.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Continuous Casting (AREA)
US3124489D 1960-05-02 Method of continuously growing thin strip crystals Expired - Lifetime US3124489A (en)

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US2593360A 1960-05-02 1960-05-02

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CH (1) CH399744A (enrdf_load_stackoverflow)
DK (1) DK103801C (enrdf_load_stackoverflow)
ES (1) ES267000A1 (enrdf_load_stackoverflow)
GB (1) GB958897A (enrdf_load_stackoverflow)
NL (1) NL264214A (enrdf_load_stackoverflow)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3194637A (en) * 1960-06-22 1965-07-13 Westinghouse Electric Corp Apparatus for the continuous dendritic growth of crystalline material
US3249404A (en) * 1963-02-20 1966-05-03 Merck & Co Inc Continuous growth of crystalline materials
US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
US3278342A (en) * 1963-10-14 1966-10-11 Westinghouse Electric Corp Method of growing crystalline members completely within the solution melt
US3291571A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Crystal growth
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies
US3353914A (en) * 1964-12-30 1967-11-21 Martin Marietta Corp Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof
US3453352A (en) * 1964-12-14 1969-07-01 Texas Instruments Inc Method and apparatus for producing crystalline semiconductor ribbon
US3470039A (en) * 1966-12-21 1969-09-30 Texas Instruments Inc Continuous junction growth
US3527574A (en) * 1966-09-27 1970-09-08 Tyco Laboratories Inc Growth of sapphire filaments
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3795488A (en) * 1971-02-01 1974-03-05 Gen Electric Method for producing crystal boules with extensive flat, parallel facets
US3796548A (en) * 1971-09-13 1974-03-12 Ibm Boat structure in an apparatus for making semiconductor compound single crystals
US3954551A (en) * 1974-07-17 1976-05-04 Texas Instruments Incorporated Method of pulling silicon ribbon through shaping guide
US4108714A (en) * 1975-02-26 1978-08-22 Siemens Aktiengesellschaft Process for producing plate-shaped silicon bodies for solar cells
US4116641A (en) * 1976-04-16 1978-09-26 International Business Machines Corporation Apparatus for pulling crystal ribbons from a truncated wedge shaped die
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
US4211600A (en) * 1974-12-04 1980-07-08 Metals Research Limited Crystal growth
US4216186A (en) * 1978-08-31 1980-08-05 Nasa Means for growing ribbon crystals without subjecting the crystals to thermal shock-induced strains
US4226834A (en) * 1975-11-14 1980-10-07 Mitsubishi Kinzoku Kabushiki Kaisha Lateral pulling growth of crystal ribbons and apparatus therefor
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
US4329195A (en) * 1975-07-28 1982-05-11 Mitsubishi Kinzoku Kabushiki Kaisha Lateral pulling growth of crystal ribbons
FR2511708A1 (fr) * 1981-08-20 1983-02-25 Mobil Tyco Solar Energy Corp Procede et appareil pour regler l'atmosphere entourant une zone de croissance cristalline
US4517048A (en) * 1983-10-31 1985-05-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for minimizing convection during crystal growth from solution
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
US4784715A (en) * 1975-07-09 1988-11-15 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US5394825A (en) * 1992-02-28 1995-03-07 Crystal Systems, Inc. Method and apparatus for growing shaped crystals
US20080302296A1 (en) * 2007-06-08 2008-12-11 Weidong Huang Method and Apparatus for Growing a Ribbon Crystal with Localized Cooling

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE791024A (fr) * 1971-11-08 1973-05-07 Tyco Laboratories Inc Procede pour developper des cristaux a partir d'un bain d'une matiere

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2782473A (en) * 1953-03-20 1957-02-26 Joseph B Brennan Continuous casting method and apparatus
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
US2876147A (en) * 1953-02-14 1959-03-03 Siemens Ag Method of and apparatus for producing semiconductor material
US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
US3002824A (en) * 1956-11-28 1961-10-03 Philips Corp Method and apparatus for the manufacture of crystalline semiconductors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2876147A (en) * 1953-02-14 1959-03-03 Siemens Ag Method of and apparatus for producing semiconductor material
US2782473A (en) * 1953-03-20 1957-02-26 Joseph B Brennan Continuous casting method and apparatus
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
US3002824A (en) * 1956-11-28 1961-10-03 Philips Corp Method and apparatus for the manufacture of crystalline semiconductors

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3194637A (en) * 1960-06-22 1965-07-13 Westinghouse Electric Corp Apparatus for the continuous dendritic growth of crystalline material
US3249404A (en) * 1963-02-20 1966-05-03 Merck & Co Inc Continuous growth of crystalline materials
US3278342A (en) * 1963-10-14 1966-10-11 Westinghouse Electric Corp Method of growing crystalline members completely within the solution melt
US3291571A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Crystal growth
US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
US3453352A (en) * 1964-12-14 1969-07-01 Texas Instruments Inc Method and apparatus for producing crystalline semiconductor ribbon
US3353914A (en) * 1964-12-30 1967-11-21 Martin Marietta Corp Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies
US3527574A (en) * 1966-09-27 1970-09-08 Tyco Laboratories Inc Growth of sapphire filaments
US3470039A (en) * 1966-12-21 1969-09-30 Texas Instruments Inc Continuous junction growth
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3795488A (en) * 1971-02-01 1974-03-05 Gen Electric Method for producing crystal boules with extensive flat, parallel facets
US3796548A (en) * 1971-09-13 1974-03-12 Ibm Boat structure in an apparatus for making semiconductor compound single crystals
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
US3954551A (en) * 1974-07-17 1976-05-04 Texas Instruments Incorporated Method of pulling silicon ribbon through shaping guide
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
US4211600A (en) * 1974-12-04 1980-07-08 Metals Research Limited Crystal growth
US4108714A (en) * 1975-02-26 1978-08-22 Siemens Aktiengesellschaft Process for producing plate-shaped silicon bodies for solar cells
US4784715A (en) * 1975-07-09 1988-11-15 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US4329195A (en) * 1975-07-28 1982-05-11 Mitsubishi Kinzoku Kabushiki Kaisha Lateral pulling growth of crystal ribbons
US4226834A (en) * 1975-11-14 1980-10-07 Mitsubishi Kinzoku Kabushiki Kaisha Lateral pulling growth of crystal ribbons and apparatus therefor
US4264407A (en) * 1975-11-14 1981-04-28 Mitsubishi Kinzoku Kabushiki Kaisha Lateral pulling growth of crystal ribbons and apparatus therefor
US4116641A (en) * 1976-04-16 1978-09-26 International Business Machines Corporation Apparatus for pulling crystal ribbons from a truncated wedge shaped die
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
US4216186A (en) * 1978-08-31 1980-08-05 Nasa Means for growing ribbon crystals without subjecting the crystals to thermal shock-induced strains
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
US4443411A (en) * 1980-12-15 1984-04-17 Mobil Solar Energy Corporation Apparatus for controlling the atmosphere surrounding a crystal growth zone
FR2511708A1 (fr) * 1981-08-20 1983-02-25 Mobil Tyco Solar Energy Corp Procede et appareil pour regler l'atmosphere entourant une zone de croissance cristalline
US4517048A (en) * 1983-10-31 1985-05-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for minimizing convection during crystal growth from solution
US5394825A (en) * 1992-02-28 1995-03-07 Crystal Systems, Inc. Method and apparatus for growing shaped crystals
US20080302296A1 (en) * 2007-06-08 2008-12-11 Weidong Huang Method and Apparatus for Growing a Ribbon Crystal with Localized Cooling
US7780782B2 (en) * 2007-06-08 2010-08-24 Evergreen Solar, Inc. Method and apparatus for growing a ribbon crystal with localized cooling

Also Published As

Publication number Publication date
NL264214A (enrdf_load_stackoverflow) 1900-01-01
GB958897A (en) 1964-05-27
DK103801C (da) 1966-02-21
CH399744A (de) 1965-09-30
ES267000A1 (es) 1961-07-16

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