US2979024A - Apparatus for fusing contacts onto semiconductive bodies - Google Patents

Apparatus for fusing contacts onto semiconductive bodies Download PDF

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Publication number
US2979024A
US2979024A US754088A US75408858A US2979024A US 2979024 A US2979024 A US 2979024A US 754088 A US754088 A US 754088A US 75408858 A US75408858 A US 75408858A US 2979024 A US2979024 A US 2979024A
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US
United States
Prior art keywords
fusing
bodies
apertures
contacts onto
semiconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US754088A
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English (en)
Inventor
Pellekaan Leendert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Philips Corp
North American Philips Co Inc
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US Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp filed Critical US Philips Corp
Application granted granted Critical
Publication of US2979024A publication Critical patent/US2979024A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 

Definitions

  • the present invention relates to apparatus for fusing contacts onto semi-conductive devices, more especially but not exclusively for making transistors, crystal diodes and similar semi-conducting bodies.
  • alloy jig consisting of graphite, in which one or more cavities accommodate as many semi-conductive bodies and which is further provided with one or more apertures accommodating the material for the contacts.
  • this material is previously formed into pellets having, for example, a diameter of a few tenths of a millimetre.
  • the fusing operation itself is effected by introducing the alloy jig into an oven in which the required heat treatment is carried out.
  • the alloy jigs are usually made from graphite, since this material can be produced with a high degree of purity which is of paramount importance in this technique. It has further been proposed to make the alloy jigs from ceramic material or stainless steel.
  • the present invention has inter alia for its object to obviate these difficulties.
  • alloy jigs are employed which comprise mica parts in which apertures are provided for maintaining the contact material in position. It has been found that this mica, if properly cleaned, for instance by washing in trichloraethylene, does not give oif impurities, while as a result of its thinness it does not practically impede a satisfactory circulation of gases at the fusing zone. Also, it does not show any tendency to be wetted by the customary alloys.
  • a graphite or chrome-iron plate 1 has a cavity 2 accommodating a semi-conductive body 3, for example a slice of n-conductivity type germanium.
  • the plate 1 can. lies a mica plate 4 with two apertures 5 accommodating two globules 6 consisting of contact material, for example indium.
  • the parts 1 and 4 are clamped together by means of springs 7, made of steel.
  • the alloy jig is introduced into an oven.
  • the alloying is carried out in a usual protective atmosphere, i.e. hydrogen at a temperature of about 500 C. Mica of a normal grade will withstand temperatures up to about 650 C., though better grades might be used to higher temperatures.
  • Apparatus for fusing contact material to impuritysensitive semiconductive bodies comprising support means for receiving and supporting a semiconductive wafer, and
  • a thin mica plate arranged parallel to and mounted on said support and overlying and contacting a surface of said water, said mica plate containing two closely-spaced apertures overlying the wafer surface for receiving and positioning a pair of masses of contact material in engagement with the wafer surface for melting in contact with the said water while confined within the said apertures, said apertures having a diameter less than the thickness of the said mica plate and being spaced apart a distance less than the thickness of the said mica plate.
  • Apparatus for fusing contact material to impuritysensitive semiconductive bodies comprising support means for receiving and supporting a semiconductive wafer, and a thin mica plate having a thickness not greater than 200 microns arranged parallel to and mounted on said support and overlying and contacting a surface of said water, said mica plate containing two closelyespaced apertures overlying the wafer surface for receiving and positioning a pair of masses of contact material in engagement with the wafer surface for melting in contact with the said water while confined within the said apertures, said apertures having a diameter not greater than 200 microns and being spaced apart a distance not greater than 200 microns.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Contacts (AREA)
US754088A 1957-08-08 1958-08-08 Apparatus for fusing contacts onto semiconductive bodies Expired - Lifetime US2979024A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL219744 1957-08-08

Publications (1)

Publication Number Publication Date
US2979024A true US2979024A (en) 1961-04-11

Family

ID=19750946

Family Applications (1)

Application Number Title Priority Date Filing Date
US754088A Expired - Lifetime US2979024A (en) 1957-08-08 1958-08-08 Apparatus for fusing contacts onto semiconductive bodies

Country Status (7)

Country Link
US (1) US2979024A (enrdf_load_stackoverflow)
BE (1) BE570141A (enrdf_load_stackoverflow)
CH (1) CH363095A (enrdf_load_stackoverflow)
DE (1) DE1087705B (enrdf_load_stackoverflow)
FR (1) FR1201191A (enrdf_load_stackoverflow)
GB (1) GB884557A (enrdf_load_stackoverflow)
NL (2) NL108503C (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3105784A (en) * 1960-12-23 1963-10-01 Merck & Co Inc Process of making semiconductors
US3302612A (en) * 1963-09-12 1967-02-07 Guy R Stutzman Pattern masks and method for making same
US4530861A (en) * 1983-12-19 1985-07-23 General Electric Company Method and apparatus for masking a surface of a blade member
US20070152017A1 (en) * 2005-12-30 2007-07-05 Huth Kenneth J Method for depositing solder material on an electronic component part

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1125084B (de) * 1961-01-31 1962-03-08 Telefunken Patent Verfahren zum Auflegieren von Legierungsmaterial auf einen Halbleiterkoerper
GB1001517A (en) * 1961-09-12 1965-08-18 Mullard Ltd Improvements in and relating to jigs for alloying material to semiconductor bodies
GB1074283A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1670700A (en) * 1925-04-28 1928-05-22 Gen Electric Method of electric welding
US2506047A (en) * 1946-12-31 1950-05-02 Sylvania Electric Prod Protective device for use in soldering operations
US2798013A (en) * 1955-08-05 1957-07-02 Siemens Ag Method of producing junction-type semi-conductor devices, and apparatus therefor
US2835615A (en) * 1956-01-23 1958-05-20 Clevite Corp Method of producing a semiconductor alloy junction
US2857296A (en) * 1955-08-04 1958-10-21 Gen Electric Co Ltd Methods of forming a junction in a semiconductor
US2858246A (en) * 1957-04-22 1958-10-28 Bell Telephone Labor Inc Silicon single crystal conductor devices
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
NL88391C (enrdf_load_stackoverflow) * 1952-08-14

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1670700A (en) * 1925-04-28 1928-05-22 Gen Electric Method of electric welding
US2506047A (en) * 1946-12-31 1950-05-02 Sylvania Electric Prod Protective device for use in soldering operations
US2857296A (en) * 1955-08-04 1958-10-21 Gen Electric Co Ltd Methods of forming a junction in a semiconductor
US2798013A (en) * 1955-08-05 1957-07-02 Siemens Ag Method of producing junction-type semi-conductor devices, and apparatus therefor
US2835615A (en) * 1956-01-23 1958-05-20 Clevite Corp Method of producing a semiconductor alloy junction
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
US2858246A (en) * 1957-04-22 1958-10-28 Bell Telephone Labor Inc Silicon single crystal conductor devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3105784A (en) * 1960-12-23 1963-10-01 Merck & Co Inc Process of making semiconductors
US3302612A (en) * 1963-09-12 1967-02-07 Guy R Stutzman Pattern masks and method for making same
US4530861A (en) * 1983-12-19 1985-07-23 General Electric Company Method and apparatus for masking a surface of a blade member
US20070152017A1 (en) * 2005-12-30 2007-07-05 Huth Kenneth J Method for depositing solder material on an electronic component part
US7946470B2 (en) * 2005-12-30 2011-05-24 Semx Corporation Method for depositing solder material on an electronic component part using separators

Also Published As

Publication number Publication date
DE1087705B (de) 1960-08-25
BE570141A (enrdf_load_stackoverflow)
NL219744A (enrdf_load_stackoverflow)
CH363095A (de) 1962-07-15
FR1201191A (fr) 1959-12-29
GB884557A (en) 1961-12-13
NL108503C (enrdf_load_stackoverflow)

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