US2956863A - Apparatus for the manufacture of single crystals - Google Patents
Apparatus for the manufacture of single crystals Download PDFInfo
- Publication number
- US2956863A US2956863A US689197A US68919757A US2956863A US 2956863 A US2956863 A US 2956863A US 689197 A US689197 A US 689197A US 68919757 A US68919757 A US 68919757A US 2956863 A US2956863 A US 2956863A
- Authority
- US
- United States
- Prior art keywords
- vessel
- crystal
- rod
- melt
- interior
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Definitions
- This invention relates to an apparatus for the manufacture of single crystals from a substance, for instance a semiconductor such as germanium or silicon, by drawmg a single crystal upwards from a melt of this substance in the form of a rod.
- this rod may be divided into smaller bodies; for instance in the case of semiconductors these smaller bodies are used in semi-conductive devices such as transistors or crystal diodes.
- Single crystals obtained by this known crystal-pulling technique have a high content of lattice defects, so called dislocations.
- these dislocations are undesirable, since they seriously interfere with the physical properties, for example the conductivity, of a single crystal and may also adversely affect the further processing of a single crystal, for example diflusion or alloying.
- zone leveling to maintain the grown monocrystal rod as a whole at a temperature only slightly lower than the melting temperature of the rod and, upon termination of the growing process, to cool the whole rod slowly and evenly.
- the present invention has for its object to provide a simpler method and a device for carrying out this method, which constitutes an improvement upon the pulling method and yields good results without involving the aforesaid inconveniences.
- said rod is at least partially drawn upwards inside i.e. along the axis, of a reflecting screen which is located above the melt and shaped as a truncated cone shell, the base of which faces the melt. Th angle subtended by the generatrix of the cone and the axis of the rod is advantageously made smaller than 60", preferably 10 to 30.
- the screen is preferably made from a material having a high reflection-coelficient, for example molybdenum, nickel or tungsten. It may sometimes be advantageous to use a screen made from a material having a low reflection coefiicient, which satisfies other requirements imposed by the circumstances and the inner wall of which is furnished with a reflective layer.
- the etch-pit density of the crosssectional area of a pulled-up monocrystal rod which density is a measure of the dislocation density of the rod, can be reduced to as low a value as one-tenth of that of a monocrystal rod made by means of the conventional pulling-method.
- a graphite crucible 1 constains a germanium melt 2 and is heated by induced high-frequency current by means of a high frequency coil 3.
- the upper edge of the crucible 1 carries a quartz ring 4 on which is rested a reflecting molybdenum screen 5 in the form of a truncated cone shell, the imaginary base '6 of which faces the melt 2.
- the monocrystal rod 7 is partially pulled up inside and more particularly in axial sense of the reflecting screen.
- the screen is approximately 8 centimetres high and the angle a subtended by the generatrix of the cone and the axis of the rod is approximately 20.
- the highfrequency coil 3 also partially surrounds the reflecting screen 5 so that this screen contributes, by radiation, to the reflected radiation. It has been found that this expedient means another appreciable improvement.
- the reflecting screen is provided with a number of holes 8 which permit inspection of the growing process inside the crucible.
- the crucible is separated from the enw'ronment by means of
- Crystal-pulling apparatus comprising a refractory vessel with a substantially open top for holding a quan tity of molten semi-conductive material, a hollow, truncated, conical, conductive reflecting member having open ends and mounted on and over the vessel with its wide end adjacent the vessel and with its inner reflecting surface exposed to the vessel interior, a coil surrounding the vessel for heating the vessel interior by means of high-frequency currents, and means for drawing a growing crystal upwards from the melt in the vessel and.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL212548 | 1956-11-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
US2956863A true US2956863A (en) | 1960-10-18 |
Family
ID=19750816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US689197A Expired - Lifetime US2956863A (en) | 1956-11-28 | 1957-10-09 | Apparatus for the manufacture of single crystals |
Country Status (6)
Country | Link |
---|---|
US (1) | US2956863A (xx) |
CH (1) | CH377786A (xx) |
DE (1) | DE1051806B (xx) |
FR (1) | FR1196958A (xx) |
GB (1) | GB827466A (xx) |
NL (2) | NL212548A (xx) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3097068A (en) * | 1959-05-29 | 1963-07-09 | Union Carbide Corp | Crystallization of pure silicon platelets |
US3212858A (en) * | 1963-01-28 | 1965-10-19 | Westinghouse Electric Corp | Apparatus for producing crystalline semiconductor material |
US3251655A (en) * | 1963-09-27 | 1966-05-17 | Westinghouse Electric Corp | Apparatus for producing crystalline semiconductor material |
US3258314A (en) * | 1963-04-12 | 1966-06-28 | Westinghouse Electric Corp | Method for interior zone melting of a crystalline rod |
US3261671A (en) * | 1963-11-29 | 1966-07-19 | Philips Corp | Device for treating semi-conductor materials by melting |
US3291571A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Crystal growth |
US3342559A (en) * | 1964-04-27 | 1967-09-19 | Westinghouse Electric Corp | Apparatus for producing dendrites |
US4116642A (en) * | 1976-12-15 | 1978-09-26 | Western Electric Company, Inc. | Method and apparatus for avoiding undesirable deposits in crystal growing operations |
US4330361A (en) * | 1980-02-14 | 1982-05-18 | Wacker-Chemitronic Gesellschaft Fur Elektronic-Grundstoffe Mbh | Process for the manufacture of high-purity monocrystals |
US4478676A (en) * | 1982-09-07 | 1984-10-23 | Litton Systems, Inc. | Method for decreasing radial temperature gradients of crystal growth melts utilizing radiant energy absorptive materials and crystal growth chambers comprising such materials |
US4957713A (en) * | 1986-11-26 | 1990-09-18 | Kravetsky Dmitry Y | Apparatus for growing shaped single crystals |
US4971650A (en) * | 1989-09-22 | 1990-11-20 | Westinghouse Electric Corp. | Method of inhibiting dislocation generation in silicon dendritic webs |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1077187B (de) * | 1958-11-13 | 1960-03-10 | Werk Fuer Bauelemente Der Nach | Verfahren zur Herstellung von Einkristallen aus halbleitenden Stoffen |
US3058915A (en) * | 1960-01-18 | 1962-10-16 | Westinghouse Electric Corp | Crystal growing process |
DE1191789B (de) * | 1960-10-25 | 1965-04-29 | Siemens Ag | Verfahren zum Ziehen von vorzugsweise einkristallinen Halbleiterstaeben |
DE1238450B (de) * | 1964-06-04 | 1967-04-13 | Consortium Elektrochem Ind | Verfahren zum Herstellen von spannungsfreien und rissefreien Staeben aus hochreinem Bor aus der Schmelze |
DE2928089C3 (de) * | 1979-07-12 | 1982-03-04 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Verbundtiegel für halbleitertechnologische Zwecke und Verfahren zur Herstellung |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2291083A (en) * | 1942-07-28 | Furnace construction | ||
US2686212A (en) * | 1953-08-03 | 1954-08-10 | Gen Electric | Electric heating apparatus |
US2753280A (en) * | 1952-05-01 | 1956-07-03 | Rca Corp | Method and apparatus for growing crystalline material |
US2809136A (en) * | 1954-03-10 | 1957-10-08 | Sylvania Electric Prod | Apparatus and method of preparing crystals of silicon germanium group |
US2839436A (en) * | 1955-04-19 | 1958-06-17 | Texas Instruments Inc | Method and apparatus for growing semiconductor crystals |
-
0
- NL NL103477D patent/NL103477C/xx active
- NL NL212548D patent/NL212548A/xx unknown
-
1957
- 1957-10-09 US US689197A patent/US2956863A/en not_active Expired - Lifetime
- 1957-11-23 DE DEN14376A patent/DE1051806B/de active Pending
- 1957-11-25 CH CH5303657A patent/CH377786A/de unknown
- 1957-11-25 GB GB36647/57A patent/GB827466A/en not_active Expired
- 1957-11-26 FR FR1196958D patent/FR1196958A/fr not_active Expired
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2291083A (en) * | 1942-07-28 | Furnace construction | ||
US2753280A (en) * | 1952-05-01 | 1956-07-03 | Rca Corp | Method and apparatus for growing crystalline material |
US2686212A (en) * | 1953-08-03 | 1954-08-10 | Gen Electric | Electric heating apparatus |
US2809136A (en) * | 1954-03-10 | 1957-10-08 | Sylvania Electric Prod | Apparatus and method of preparing crystals of silicon germanium group |
US2839436A (en) * | 1955-04-19 | 1958-06-17 | Texas Instruments Inc | Method and apparatus for growing semiconductor crystals |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3097068A (en) * | 1959-05-29 | 1963-07-09 | Union Carbide Corp | Crystallization of pure silicon platelets |
US3212858A (en) * | 1963-01-28 | 1965-10-19 | Westinghouse Electric Corp | Apparatus for producing crystalline semiconductor material |
US3258314A (en) * | 1963-04-12 | 1966-06-28 | Westinghouse Electric Corp | Method for interior zone melting of a crystalline rod |
US3251655A (en) * | 1963-09-27 | 1966-05-17 | Westinghouse Electric Corp | Apparatus for producing crystalline semiconductor material |
US3261671A (en) * | 1963-11-29 | 1966-07-19 | Philips Corp | Device for treating semi-conductor materials by melting |
US3291571A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Crystal growth |
US3342559A (en) * | 1964-04-27 | 1967-09-19 | Westinghouse Electric Corp | Apparatus for producing dendrites |
US4116642A (en) * | 1976-12-15 | 1978-09-26 | Western Electric Company, Inc. | Method and apparatus for avoiding undesirable deposits in crystal growing operations |
US4330361A (en) * | 1980-02-14 | 1982-05-18 | Wacker-Chemitronic Gesellschaft Fur Elektronic-Grundstoffe Mbh | Process for the manufacture of high-purity monocrystals |
US4478676A (en) * | 1982-09-07 | 1984-10-23 | Litton Systems, Inc. | Method for decreasing radial temperature gradients of crystal growth melts utilizing radiant energy absorptive materials and crystal growth chambers comprising such materials |
US4957713A (en) * | 1986-11-26 | 1990-09-18 | Kravetsky Dmitry Y | Apparatus for growing shaped single crystals |
US4971650A (en) * | 1989-09-22 | 1990-11-20 | Westinghouse Electric Corp. | Method of inhibiting dislocation generation in silicon dendritic webs |
AU633610B2 (en) * | 1989-09-22 | 1993-02-04 | Ebara Solar, Inc. | Method of inhibiting dislocation generation in silicon dendritic webs |
Also Published As
Publication number | Publication date |
---|---|
CH377786A (de) | 1964-05-31 |
GB827466A (en) | 1960-02-03 |
DE1051806B (de) | 1959-03-05 |
NL212548A (xx) | |
NL103477C (xx) | |
FR1196958A (fr) | 1959-11-27 |
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