US2810873A - Transistors - Google Patents

Transistors Download PDF

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Publication number
US2810873A
US2810873A US603354A US60335456A US2810873A US 2810873 A US2810873 A US 2810873A US 603354 A US603354 A US 603354A US 60335456 A US60335456 A US 60335456A US 2810873 A US2810873 A US 2810873A
Authority
US
United States
Prior art keywords
base electrode
cap
transistor
envelope
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US603354A
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English (en)
Inventor
Knott Ralph David
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Application granted granted Critical
Publication of US2810873A publication Critical patent/US2810873A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S220/00—Receptacles
    • Y10S220/29—Welded seam

Definitions

  • This invention relates to transistors.
  • a transistor comprising a semiconductor body having in contact therewith emitter, collector and base electrodes, said body being housed in an envelope of which at least the major part is metal, and the base electrode being constituted by a relatively massive metallic member to which the semiconductor body is intimately connected over an appreciable area and part of which bears resiliently over an appreciable area against the internal surface of a metallic part of the envelope.
  • Figure l is a sectional view of a germanium junction transistor, the section being along the line II in Figure 2;
  • Figure 2 is a section on the line ll-il in Figure 1.
  • the transistor includes a square plate 1 of N-type germanium which is provided with emitter and collector electrodes 2 and 3 respectively, the electrodes 2 and 3 being centrally disposed on opposite main faces of the plate 1.
  • the electrodes 2 and 3 are formed in known manner by fusing small quantities of indium to the appropriate faces of the plate 1 and are respectively provided with leads in the form of line wires 4 and 5 whose ends are respectively embedded in the indium beads thus produced.
  • the main face of the germanium plate 1 on which the emitter electrode 2 is disposed is soldered to a base electrode 6 formed from sheet metal, the base electrode 6 being in the general form of a channel member of U-shaped cross-section having pressed into its base a square well 7 extending into the interior of the U.
  • This well 7 serves to locate the germanium plate 1, which is soldered to the base electrode 6 at the bottom of the well 7, a centrally disposed circular hole 8 having a diameter somewhat less than the length of a side of the germanium plate 1 being provided in the base electrode 6 to accommodate the emitter electrode 2.
  • the unit described above is mounted on a support con- Patented 2.2, 1957 sisting of a copper skirt 9 in which is sealed a glass bead 10 through which are sealed three wires 11, 12 and 13.
  • the wires 11, 12 and 13 are respectively welded to the emitter and collector lead wires 4 and 5 and a tag 14 formed on the base electrode 6.
  • the main part of the envelope of the transistor is constituted by a circular cylindrical copper cap 15 into which the mounted unit is inserted with the skirt 9 disposed in the open end of the cap 15 and with the longitudinal axis of the base electrode 6 extending parallel to the axis of the cap 15.
  • the base electrode 6 is initially made of such a size that when it is inserted into the cap 15 the arms of the base electrodes 6 are pushed inwards, so that they bear resiliently on the internal surface of the cap 15; the corners of the base electrode 6 at the end which is inserted first are suitably rounded to facilitate insertion.
  • the envelope is hermetically sealed by cold pressure welding together flanges 16 and 17 respectively formed on the outer ends of the skirt 9 and the cap 15, the welding being carried out in an atmosphere of dry nitrogen so as to provide a permanent inert gas filling for the envelope. Finally, the space within the skirt 9 is filled with an electrically insulating synthetic resin 18.
  • the form of the base electrode 6 is such that there is a good thermal connection between the germanium plate 1 and the copper cap 15, this materially assisting in the eificient dissipation of heat generated during operation of the transistor; it will further be appreciated that this result is achieved without requiring any extra joints to be made between parts of the transistor over and above the case where no such thermal connection is provided.
  • the base electrode may be provided with one or more tongues projecting transversely to its longitudinal axis and arranged to bear resiliently on the closed end of the cap when the base electrode is inserted into the cap.
  • a transistor comprising a semiconductor body having in contact therewith emitter, collector and base electrodes, said body being housed in an envelope of which at least the major part is metal, and the base electrode being constituted by a relatively massive metallic member to which the semiconductor body is intimately connected over an appreciable area and part of which bears resiliently over an appreciable area against the internal surface of a metallic part of the envelope.
  • a transistor according to claim 1 in which the main part of the envelope is constituted by a metal cap in the open end of which is sealed a support on which the base electrode is mounted, the base electrode being in the general form of a channel member of U-shaped cross-section of such a size that when the base electrode is inserted into the cap the arms of the base electrode are pushed inwards so that they bear resiliently on the internal surface of the cap.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Bipolar Transistors (AREA)
  • Facsimile Heads (AREA)
US603354A 1955-08-12 1956-08-10 Transistors Expired - Lifetime US2810873A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB23334/55A GB809071A (en) 1955-08-12 1955-08-12 Improvements in or relating to transistors
GB28956/57A GB838987A (en) 1955-08-12 1957-09-13 Improvements in or relating to transistors

Publications (1)

Publication Number Publication Date
US2810873A true US2810873A (en) 1957-10-22

Family

ID=62527903

Family Applications (1)

Application Number Title Priority Date Filing Date
US603354A Expired - Lifetime US2810873A (en) 1955-08-12 1956-08-10 Transistors

Country Status (4)

Country Link
US (1) US2810873A (ko)
DE (1) DE1048358B (ko)
FR (1) FR1155743A (ko)
GB (2) GB809071A (ko)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2967984A (en) * 1958-11-03 1961-01-10 Philips Corp Semiconductor device
US2977515A (en) * 1958-05-07 1961-03-28 Philco Corp Semiconductor fabrication
US2999194A (en) * 1956-03-12 1961-09-05 Gen Electric Co Ltd Semiconductor devices
DE1114252B (de) * 1958-04-24 1961-09-28 Siemens Edison Swan Ltd Verfahren und Vorrichtung zum hermetischen Abdichten einer eine Halbleiteranordnung enthaltenden Metallkapsel
US3020454A (en) * 1959-11-09 1962-02-06 Solid State Products Inc Sealing of electrical semiconductor devices
US3039175A (en) * 1959-11-09 1962-06-19 Solid State Products Inc Sealing of electrical semiconductor devices
US3076253A (en) * 1955-03-10 1963-02-05 Texas Instruments Inc Materials for and methods of manufacturing semiconductor devices
US3155936A (en) * 1958-04-24 1964-11-03 Motorola Inc Transistor device with self-jigging construction
US3182845A (en) * 1965-05-11 Housing for an electronic device
US3196326A (en) * 1961-07-14 1965-07-20 Gen Electric Co Ltd Transistor with mounting providing efficient heat dissipation through an envelope and method of making the same
US3203083A (en) * 1961-02-08 1965-08-31 Texas Instruments Inc Method of manufacturing a hermetically sealed semiconductor capsule
US3241217A (en) * 1962-11-09 1966-03-22 Philco Corp Desiccation of electronic enclosures using boron nitride hot sealing method
US3735208A (en) * 1971-08-26 1973-05-22 Rca Corp Thermal fatigue lead-soldered semiconductor device
US20110196428A1 (en) * 2004-06-23 2011-08-11 Rachiotek Llc Method for stabilizing a spine

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251229A (ko) * 1959-05-05
DE1083438B (de) * 1959-05-23 1960-06-15 Elektronik M B H Von einem Metallgehaeuse umschlossene Transistoranordnung
NL258753A (ko) * 1959-12-07

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2615965A (en) * 1948-07-24 1952-10-28 Sylvania Electric Prod Crystal amplifier device
US2661448A (en) * 1948-12-20 1953-12-01 North American Aviation Inc Transfer resistor and method of making
US2673311A (en) * 1948-07-24 1954-03-23 Sylvania Electric Prod Crystal amplifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2615965A (en) * 1948-07-24 1952-10-28 Sylvania Electric Prod Crystal amplifier device
US2673311A (en) * 1948-07-24 1954-03-23 Sylvania Electric Prod Crystal amplifier
US2661448A (en) * 1948-12-20 1953-12-01 North American Aviation Inc Transfer resistor and method of making

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3182845A (en) * 1965-05-11 Housing for an electronic device
US3076253A (en) * 1955-03-10 1963-02-05 Texas Instruments Inc Materials for and methods of manufacturing semiconductor devices
US2999194A (en) * 1956-03-12 1961-09-05 Gen Electric Co Ltd Semiconductor devices
DE1114252B (de) * 1958-04-24 1961-09-28 Siemens Edison Swan Ltd Verfahren und Vorrichtung zum hermetischen Abdichten einer eine Halbleiteranordnung enthaltenden Metallkapsel
US3155936A (en) * 1958-04-24 1964-11-03 Motorola Inc Transistor device with self-jigging construction
US2977515A (en) * 1958-05-07 1961-03-28 Philco Corp Semiconductor fabrication
US2967984A (en) * 1958-11-03 1961-01-10 Philips Corp Semiconductor device
US3020454A (en) * 1959-11-09 1962-02-06 Solid State Products Inc Sealing of electrical semiconductor devices
US3039175A (en) * 1959-11-09 1962-06-19 Solid State Products Inc Sealing of electrical semiconductor devices
US3203083A (en) * 1961-02-08 1965-08-31 Texas Instruments Inc Method of manufacturing a hermetically sealed semiconductor capsule
US3196326A (en) * 1961-07-14 1965-07-20 Gen Electric Co Ltd Transistor with mounting providing efficient heat dissipation through an envelope and method of making the same
US3241217A (en) * 1962-11-09 1966-03-22 Philco Corp Desiccation of electronic enclosures using boron nitride hot sealing method
US3735208A (en) * 1971-08-26 1973-05-22 Rca Corp Thermal fatigue lead-soldered semiconductor device
US20110196428A1 (en) * 2004-06-23 2011-08-11 Rachiotek Llc Method for stabilizing a spine

Also Published As

Publication number Publication date
GB809071A (en) 1959-02-18
GB838987A (en) 1960-06-22
DE1048358B (ko) 1959-01-08
FR1155743A (fr) 1958-05-07

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