US2663831A - Selenium dry-disk rectifier - Google Patents
Selenium dry-disk rectifier Download PDFInfo
- Publication number
- US2663831A US2663831A US210288A US21028851A US2663831A US 2663831 A US2663831 A US 2663831A US 210288 A US210288 A US 210288A US 21028851 A US21028851 A US 21028851A US 2663831 A US2663831 A US 2663831A
- Authority
- US
- United States
- Prior art keywords
- selenium
- rectifier
- ageing
- selenium dry
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title description 20
- 229910052711 selenium Inorganic materials 0.000 title description 20
- 239000011669 selenium Substances 0.000 title description 20
- 238000007792 addition Methods 0.000 description 6
- 230000032683 aging Effects 0.000 description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003679 aging effect Effects 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
Definitions
- Selenium dry-disc rectifiers are basically built up in a way that on a base plate of some suitable material such as straight or nickel-plated iron, light metal, etc., there is applied a thin selenium coating on which a metallic back (counter) electrode of suitable composition is deposited.
- Rectifier action is restricted to a thin layer which forms at the surface of the selenium facing the back electrode.
- the overall selenium coating must have a certain minimum thickness to avoid short-circuits between the base plate and the back electrode.
- the selenium layer proper is not identical however with the just mentioned thin rectifying layer forming at the selenium surface towards the back electrode. Strictly speaking, whatever selenium is not used in forming this barrier layer is superfluous, as it but causes a relatively high dropping resistance in the rectifying circuit so from the loss angle this portion of the rectifier should be made with a resistance as low as possible.
- a selenium rectifier comprising a base plate, a layer on said base plate consisting of selenium containing admixtures of a halogen and aluminum oxide in which the aluminum oxide is present in said layer up to milligram-percent of the selenium, and a counter-electrode on said layer.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermistors And Varistors (AREA)
Description
Patented Dec. 22, 1953 UNITED STATES ATENT OFFICE SELENIUM DRY-DISK RECTIFIER Delaware No Drawing. Application February 9, 1951, Serial No. 210,288
Claims priority, application Germany February 14, 1950 1 Claim. 1
Selenium dry-disc rectifiers are basically built up in a way that on a base plate of some suitable material such as straight or nickel-plated iron, light metal, etc., there is applied a thin selenium coating on which a metallic back (counter) electrode of suitable composition is deposited.
Rectifier action is restricted to a thin layer which forms at the surface of the selenium facing the back electrode. The overall selenium coating must have a certain minimum thickness to avoid short-circuits between the base plate and the back electrode. The selenium layer proper is not identical however with the just mentioned thin rectifying layer forming at the selenium surface towards the back electrode. Strictly speaking, whatever selenium is not used in forming this barrier layer is superfluous, as it but causes a relatively high dropping resistance in the rectifying circuit so from the loss angle this portion of the rectifier should be made with a resistance as low as possible. This decrease in resistance or increase in conductivity is achieved by admixture to the selenium of iodine or other halogens in the form of chemical compounds or in their pure state. As time goes by, the selenium rectifier however displays a weakening of its properties called ageing. Experimentation now has revealed that this gradual deterioration is greatly slowed down by the addition to the selenium of certain admixtures. Oxides like aluminium oxide thus slow down the ageing process considerably. These additions may run as high as 150 milligram-percent. (1 milligram-percent means 1 milligram to 100 grams, or 0.00001 gram to 1 gram). The amount of admixtures is determined by the consideration that the conductivity must not be affected to any significant degree. Ageing of a selenium rectifier shows up as an increase in its forward resistance.
If one thus checks the value of this forward resistance by measuring the current under shortcircuit conditions, one will realize that the shortcircuit current through the rectifier decreases as time goes by. If however in accordance with the invention the aforenamed anti-ageing substances are added to the selenium, the decrease in the short-circuit current will be considerably slower through several thousand operating hours, so compared against rectifiers lacking the aforenamed additions, the same degree of deterioration will not take place before a considerably longer time, f. i. twice that time has elapsed.
Although so far one has no positive explana tion with regard to the mechanism of the action of these additions, one can presume that it is based on the following: rectifier ageing is dependent upon temperature. This fact induces one to presume that the iodine in the selenium moves gradually away into the barrier layer due to difiusion phenomena. This however means an increased resistance in that portion of the selenium film not used as a barrier layer. The eifect of the aforementioned additions now may base upon the fact that the iodine is retained within the selenium so the ageing properties are improved while the diffusion phenomena are slowed down. Whatever the true mechanism, experimentation discloses that upon the addition of these substances, the ageing process is con siderably delayed.
I claim:
A selenium rectifier comprising a base plate, a layer on said base plate consisting of selenium containing admixtures of a halogen and aluminum oxide in which the aluminum oxide is present in said layer up to milligram-percent of the selenium, and a counter-electrode on said layer.
OTTO J. KLEIN.
References Cited in the file of this patent UNITED STATES PATENTS Number Name Date 2,137,316 Van Geel et a1 Nov. 22, 1938 2,189,576 Brunke Feb. 6, 1940 2,453,763 Smith Nov. 16, 1948
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE293548X | 1950-02-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2663831A true US2663831A (en) | 1953-12-22 |
Family
ID=6079896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US210288A Expired - Lifetime US2663831A (en) | 1950-02-14 | 1951-02-09 | Selenium dry-disk rectifier |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2663831A (en) |
| BE (1) | BE501244A (en) |
| CH (1) | CH293548A (en) |
| FR (1) | FR1032278A (en) |
| NL (1) | NL159214B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2888620A (en) * | 1956-04-30 | 1959-05-26 | Westinghouse Air Brake Co | High resistance semiconductor cells |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2137316A (en) * | 1935-02-06 | 1938-11-22 | Philips Nv | Electrode system and method of making same |
| US2189576A (en) * | 1935-06-22 | 1940-02-06 | Gen Electric | Dry plate rectifier and method of producing same |
| US2453763A (en) * | 1945-07-07 | 1948-11-16 | Ruben Samuel | Selenium rectifier and process for making same |
-
0
- NL NL7111058.A patent/NL159214B/en unknown
- BE BE501244D patent/BE501244A/xx unknown
-
1951
- 1951-02-06 CH CH293548D patent/CH293548A/en unknown
- 1951-02-09 US US210288A patent/US2663831A/en not_active Expired - Lifetime
- 1951-02-09 FR FR1032278D patent/FR1032278A/en not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2137316A (en) * | 1935-02-06 | 1938-11-22 | Philips Nv | Electrode system and method of making same |
| US2189576A (en) * | 1935-06-22 | 1940-02-06 | Gen Electric | Dry plate rectifier and method of producing same |
| US2453763A (en) * | 1945-07-07 | 1948-11-16 | Ruben Samuel | Selenium rectifier and process for making same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2888620A (en) * | 1956-04-30 | 1959-05-26 | Westinghouse Air Brake Co | High resistance semiconductor cells |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1032278A (en) | 1953-06-30 |
| CH293548A (en) | 1953-09-30 |
| NL159214B (en) | |
| BE501244A (en) |
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