US2569570A - Crystal diodes and joint contact device - Google Patents

Crystal diodes and joint contact device Download PDF

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Publication number
US2569570A
US2569570A US76822A US7682249A US2569570A US 2569570 A US2569570 A US 2569570A US 76822 A US76822 A US 76822A US 7682249 A US7682249 A US 7682249A US 2569570 A US2569570 A US 2569570A
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US
United States
Prior art keywords
crystal
contact device
contact
point
joint contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US76822A
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English (en)
Inventor
Matare Herbert Francois
Poilleaux Andre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie des Freins et Signaux Westinghouse SA
Original Assignee
Compagnie des Freins et Signaux Westinghouse SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie des Freins et Signaux Westinghouse SA filed Critical Compagnie des Freins et Signaux Westinghouse SA
Application granted granted Critical
Publication of US2569570A publication Critical patent/US2569570A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

Definitions

  • the contact device according. to. the present invention avoids n1 these drawbacks by solving the a considerable problem from altogether different anglawhile at the same. time ensuring their ready volume production, to provide bonta'ct devices of-3remarkable uniformity in mechanical properties and which eliminate the greater part of electrical ses r nduqtanee alone, In the contact device according liq.
  • this invenli ns l me b r h t establ s es c pa co tact has the fo m r, a. step 1g cylindrical cap or ca 'suietne basic form of which is. a pointed cone,
  • v p w Fig. 1 is an .elevat ional view partly in crosssection, of a diode equipped with the device according to this invention.
  • Fig. 2 "shows on a larger scale a vertical axial section of the cap, while Fig. 3 is a plan view.
  • Fig. '4 is a diagrammatic torted condition.
  • Fig. 5 is a plan view of a blank from which the cap may be made by stamping'orpressing'.
  • Y i Figs. 6 and.7 are wiringdiagrams'of equivalent circuits respectively of-fa crystal diode :of a well known type in which the needle is formedzpot a mere spring and oi a crystal diodefitted with a resilient capsule according to the invention.
  • the principle of the invention resides in the specific construction of the cap. As shown in view of the cap in dis- Figs.
  • the c ap is formed with three cylindrical portions 1, land 3 of-dec'ieasing diameters, the widest of which is welded to the end of an electrode 4. 5 is the point which is fitted centrally to the narrowest part 3 of the cap.
  • t e re il e cy i he a sule it may be formed of segments connected only at the-center, as shown in Fig. 5; where a blank of clover-leaf contour with four segments 6 separated by deep gaps 1 merge only in the bottom section is designed to have the point fixed to it.
  • This blank when pressed into capsule shape, will produce a softer elasticity than the closed form shown in Fig. 2.
  • the point may be made either separately and fixed by welding to the. cap, or v anietal deposit may be made on the center f the cap whichis subsequently ground into a pointed cone.
  • This point-contact device offers the following advantages: E
  • the inductance is reduced to" a minimum whereby the inherent frequency of the detector is substantially enhanced I In (order to better. illustrate, the invention a description will now be iven or the resiliency or elasticity problem in relation to a point contactsystem of this type, by comparing such resiliency with that of members utilized up to now for making the required point contact.
  • d,, value of the deformation in cm.
  • P total pressure exerted in kg.
  • E elasticity modulus in kg./cm..
  • calculus will give, in accordance with the above formula, the deformation dp for a three-step capsule whose plates ail-1Q made of nickel of has the value dprsAn X 10 l This value is still greater if the elasticity modulus E is that of platinum or other highly elastic metal, which may of course also be used.
  • This formula ' is applicable'to the deformation of an annular plate bearing freely through its periphery on a support and subjected to a uniformly distributed pressure from withina circumference having an average radius of 2T2.
  • a diode tube equipped with the contact member according to the present invention has electrical properties such that the energy of the hyperfrequencies is better concentrated at the limit or stopping layer D.
  • a point-contact element for crystal diodes a hollow capsule of resilient material having the axial section of a low stepped cone.
  • the point-contact element for crystal diodes of claim 1 in which the capsule has the form of several cylindrical annuli of difierent diameters arranged in axial superposition, fiat annuli connecting the bottom edge of a larger with the top edge of a smaller cylindrical annulus, and a bottom closing the smallest cylindrical annulus.
  • a crystal diode comprising the point-contact device of claim 1.
  • a point contact element for crystal diodes comprising in combination, a hollow apertured capsule formed from a blank provided with radial slots and shaped with at least one step defining at least two cylindrical parts of different diameters and at least one annular part and a flat and central part connecting the lower edges of said cylindrical parts, a pointed member being fixed to fiat end central part.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Measuring Leads Or Probes (AREA)
  • Springs (AREA)
US76822A 1948-02-18 1949-02-16 Crystal diodes and joint contact device Expired - Lifetime US2569570A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR660382X 1948-02-18

Publications (1)

Publication Number Publication Date
US2569570A true US2569570A (en) 1951-10-02

Family

ID=9010217

Family Applications (1)

Application Number Title Priority Date Filing Date
US76822A Expired - Lifetime US2569570A (en) 1948-02-18 1949-02-16 Crystal diodes and joint contact device

Country Status (4)

Country Link
US (1) US2569570A (enrdf_load_html_response)
DE (1) DE818654C (enrdf_load_html_response)
GB (1) GB660382A (enrdf_load_html_response)
NL (2) NL69303C (enrdf_load_html_response)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2928031A (en) * 1958-09-04 1960-03-08 Bell Telephone Labor Inc Contact member for semiconductor translating device
US3223903A (en) * 1961-02-24 1965-12-14 Hughes Aircraft Co Point contact semiconductor device with a lead having low effective ratio of length to diameter
US3231795A (en) * 1962-10-18 1966-01-25 Bendix Corp Low inductance and capacitance electrical cartridge and method of manufacture
US3308355A (en) * 1962-07-30 1967-03-07 Texas Instruments Inc Point contact diode

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976651C (de) * 1951-12-05 1964-02-20 Siemens Ag Kristalldiode fuer sehr hohe Frequenzen
DE1051341B (de) * 1952-03-03 1959-02-26 Ericsson Telefon Ab L M Kristalldiode fuer Zentimeter- oder Dezimeterwellen
DE1021490B (de) * 1953-12-31 1957-12-27 Ibm Deutschland Transistor mit elastisch angeordneten und dicht benachbarten Spitzenelektroden
DE1113718B (de) * 1959-05-15 1961-09-14 Telefunken Patent Halbleiteranordnung mit kleiner Zuleitungsinduktivitaet

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US689199A (en) * 1901-05-02 1901-12-17 Thomas B Kinraide Electrode.
AT78069B (de) * 1916-12-14 1919-09-10 Lorenz C Ag Kontaktdetektor für die Zwecke der drahtlosen Telegraphie.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US689199A (en) * 1901-05-02 1901-12-17 Thomas B Kinraide Electrode.
AT78069B (de) * 1916-12-14 1919-09-10 Lorenz C Ag Kontaktdetektor für die Zwecke der drahtlosen Telegraphie.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2928031A (en) * 1958-09-04 1960-03-08 Bell Telephone Labor Inc Contact member for semiconductor translating device
US3223903A (en) * 1961-02-24 1965-12-14 Hughes Aircraft Co Point contact semiconductor device with a lead having low effective ratio of length to diameter
US3308355A (en) * 1962-07-30 1967-03-07 Texas Instruments Inc Point contact diode
US3231795A (en) * 1962-10-18 1966-01-25 Bendix Corp Low inductance and capacitance electrical cartridge and method of manufacture

Also Published As

Publication number Publication date
NL69303C (enrdf_load_html_response)
DE818654C (de) 1951-10-25
GB660382A (en) 1951-11-07
NL139559C (enrdf_load_html_response)

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