US2485589A - Selenium rectifier and photocell - Google Patents

Selenium rectifier and photocell Download PDF

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Publication number
US2485589A
US2485589A US668361A US66836146A US2485589A US 2485589 A US2485589 A US 2485589A US 668361 A US668361 A US 668361A US 66836146 A US66836146 A US 66836146A US 2485589 A US2485589 A US 2485589A
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US
United States
Prior art keywords
selenium
photocell
layer
resin
selenium rectifier
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US668361A
Inventor
Gray Frank
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International Standard Electric Corp
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International Standard Electric Corp
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Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
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Publication of US2485589A publication Critical patent/US2485589A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination

Definitions

  • the best cure is, of course, to ensure a selenium layer of uniform thickness and free from impurities on all plates manufactured.
  • the object of the present invention is to provide a palliative which will largely prevent short circuits occurring even when the conditions which normally produce them are present.
  • thermo-setting resin such as a v phenol formaldehyde
  • a thermo-setting resin such as a v phenol formaldehyde
  • the proportion is not critical, but 13% gives the best' results.
  • I is the base plate of nickelplated mild steel, with roughened surface on which a layer of selenium 2 is formed in intimate contact therewith.
  • a counter-electrode layer l of a known alloy is prayezd or otherwise deposited on the selenium ayer
  • the selenium before being deposited on the base plate I in powder form is mixed with 13% of a thermo-setting resin such as phenol formaldehyde.
  • the remainder of the resin will be distributed in grains throughout the selenium as indicated.
  • a selenium cell of the type wherein a layer of selenium is provided upon a metallic base element the improvement that comprises including in the selenium layer a powdered thermosetting synthetic resin distributed throughout the selenium layer.
  • thermo-setting synthetic resin is of the phenol-formaldehyde type.
  • thermo-setting synthetic resin is present in an amount of one to three weight percent, based on the selenium.
  • thermo-setting synthetic resin is of the phenol-formaldehyde type and is present in an amount of one to three weight percent, based on the selenium.

Description

Oct. 25, 1949. F, GRAY 2,485,589v
SELENIUM RECTIFIER AND PHoTocELL Filed lay 9, 1946 ATTORNEY Patented Oct. 25, 1949 SELENIUM micrrrmn AND rno'rocnu.
Frank Gray, London, England, assignor, by mesne assignments, to International Standard Electric Corporation, New York, N. Y., a corporation of Delaware Application May 9, 1946, Serial No. 668,361 In Great Britain November 2, 1944 Section 1, Public Law .690, August 8, 1946 Patent expires November 2f, 1964 This invention relates to selenium cells such as electrical dry rectiilers or photo-cells and the term selenium cells as used herein embraces both of these types of apparatus.
One of the most prevalent cau-ses of rejection during the manufacture of such rectiflers or cells is the existence of short circuits between the base plate and the counter electrode due to uneven spreading of the intervening layer of selenium, and to impurities in the selenium.
The best cure is, of course, to ensure a selenium layer of uniform thickness and free from impurities on all plates manufactured.
At present this is a counsel of perfection hard to live up to, and the object of the present invention is to provide a palliative which will largely prevent short circuits occurring even when the conditions which normally produce them are present.
According to the invention, a very small percentage of a thermo-setting resin, such as a v phenol formaldehyde is mixed with the selenium before it is applied to the base-plate. The proportion is not critical, but 13% gives the best' results. v
The invention will be clearly understood from the following description taken in conJunction with the accompanying drawing which shows diagrammatically the action of the resin in pre.
venting short circuits.
In the drawing, I is the base plate of nickelplated mild steel, with roughened surface on which a layer of selenium 2 is formed in intimate contact therewith.
A counter-electrode layer l of a known alloy is prayezd or otherwise deposited on the selenium ayer The selenium before being deposited on the base plate I in powder form is mixed with 13% of a thermo-setting resin such as phenol formaldehyde.
It has been found that if there is a thin spot in the selenium layer the resin tends to concentrate at the spot and form an insulating layer 4 Claims. (Cl. 175-366) 2 as indicated by the reference character I in the drawing between the two electrode surfaces thus preventing a short circuit at the spot. but, so
long as only a very small proportion of the surface is so insulated, having no deleterious effect on the performance of the rectiers.
The remainder of the resin will be distributed in grains throughout the selenium as indicated.
It will be seen therefore that the admixture of a little resin powder with the selenium acts to minimise the lrejections due to short-circuits.
What is claimed is:
l. In a selenium cell of the type wherein a layer of selenium is provided upon a metallic base element, the improvement that comprises including in the selenium layer a powdered thermosetting synthetic resin distributed throughout the selenium layer.
. 2. A selenium cell as dened in claim 1 wherein the thermo-setting synthetic resin is of the phenol-formaldehyde type.
3. A selenium cell as defined in claim 1 wherein the thermo-setting synthetic resin is present in an amount of one to three weight percent, based on the selenium.
4. Aselenium cell as defined in claim 1 wherein the thermo-setting synthetic resin is of the phenol-formaldehyde type and is present in an amount of one to three weight percent, based on the selenium.
. FRANK GRAY.
REFERENCES CITED 'I'he following references are of record in the
US668361A 1944-11-02 1946-05-09 Selenium rectifier and photocell Expired - Lifetime US2485589A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB21461/44A GB598589A (en) 1944-11-02 1944-11-02 Improvements in or relating to the manufacture of selenium rectifiers

Publications (1)

Publication Number Publication Date
US2485589A true US2485589A (en) 1949-10-25

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ID=10163333

Family Applications (1)

Application Number Title Priority Date Filing Date
US668361A Expired - Lifetime US2485589A (en) 1944-11-02 1946-05-09 Selenium rectifier and photocell

Country Status (5)

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US (1) US2485589A (en)
CH (1) CH258127A (en)
ES (1) ES177008A1 (en)
FR (1) FR939435A (en)
GB (2) GB600053A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2612679A (en) * 1950-10-23 1952-10-07 Ladisch Rolf Karl Filaments containing fillers
US2660697A (en) * 1950-09-21 1953-11-24 Int Standard Electric Corp Selenium rectifier with varnish intermediate layers
US2663636A (en) * 1949-05-25 1953-12-22 Haloid Co Electrophotographic plate and method of producing same
US2888620A (en) * 1956-04-30 1959-05-26 Westinghouse Air Brake Co High resistance semiconductor cells
US2963674A (en) * 1955-08-16 1960-12-06 Barnes Eng Co Construction for thermistor bolometers
US2963673A (en) * 1955-08-16 1960-12-06 Barnes Eng Co Thermistor bolometers utilizing metal backing blocks

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1027799B (en) * 1952-12-05 1958-04-10 Standard Elektrik Ag Heated pressing device for the production of selenium rectifiers and selenium photo elements

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1260472A (en) * 1915-08-21 1918-03-26 Nat Carbon Co Inc Storage-battery electrode.
US2108748A (en) * 1935-09-30 1938-02-15 Eagle Picher Lead Company Storage battery positive electrode and method of making the same
US2136241A (en) * 1938-11-08 Storage battery positive electrode
US2139731A (en) * 1935-06-01 1938-12-13 Philips Nv Asymmetric electrode system
US2162613A (en) * 1936-08-13 1939-06-13 Philips Nv Electrode system and method of making same
US2282523A (en) * 1938-11-26 1942-05-12 Suddeutsche App Fabrik Method of manufacturing selenium rectifiers and photoelectric selenium cells

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2136241A (en) * 1938-11-08 Storage battery positive electrode
US1260472A (en) * 1915-08-21 1918-03-26 Nat Carbon Co Inc Storage-battery electrode.
US2139731A (en) * 1935-06-01 1938-12-13 Philips Nv Asymmetric electrode system
US2108748A (en) * 1935-09-30 1938-02-15 Eagle Picher Lead Company Storage battery positive electrode and method of making the same
US2162613A (en) * 1936-08-13 1939-06-13 Philips Nv Electrode system and method of making same
US2282523A (en) * 1938-11-26 1942-05-12 Suddeutsche App Fabrik Method of manufacturing selenium rectifiers and photoelectric selenium cells

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2663636A (en) * 1949-05-25 1953-12-22 Haloid Co Electrophotographic plate and method of producing same
US2660697A (en) * 1950-09-21 1953-11-24 Int Standard Electric Corp Selenium rectifier with varnish intermediate layers
US2612679A (en) * 1950-10-23 1952-10-07 Ladisch Rolf Karl Filaments containing fillers
US2963674A (en) * 1955-08-16 1960-12-06 Barnes Eng Co Construction for thermistor bolometers
US2963673A (en) * 1955-08-16 1960-12-06 Barnes Eng Co Thermistor bolometers utilizing metal backing blocks
US2888620A (en) * 1956-04-30 1959-05-26 Westinghouse Air Brake Co High resistance semiconductor cells

Also Published As

Publication number Publication date
GB600053A (en) 1948-03-30
ES177008A1 (en) 1947-04-16
CH258127A (en) 1948-11-15
GB598589A (en) 1948-02-23
FR939435A (en) 1948-11-15

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