US2457186A - Method of electroforming rectifier elements - Google Patents
Method of electroforming rectifier elements Download PDFInfo
- Publication number
- US2457186A US2457186A US587422A US58742245A US2457186A US 2457186 A US2457186 A US 2457186A US 587422 A US587422 A US 587422A US 58742245 A US58742245 A US 58742245A US 2457186 A US2457186 A US 2457186A
- Authority
- US
- United States
- Prior art keywords
- electroforming
- elements
- rectifier
- voltage
- moistening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title description 32
- 238000005323 electroforming Methods 0.000 title description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000010025 steaming Methods 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
Definitions
- mation process can be performed by the use oi direct or alternating current.
- the main object of the present invention to provide a method according to which a voltage higher than it has been possible up to the present time is used in the elcctroiormi na process.
- the rectifier elements are first formed in the usual manner by providing, a semi-conductor layer on a base plate and then covering the semiconductor layer with a counter-electrode layer.
- the usual electroiorming process which follows is performed according to the present invention by moistening the rectifier elements before the electroforming process is started. This moistening can be achieved by means of steam which condenses on the cold rectifier element or by rinsing the cold rectifier element in hot water, preferably at a temperature of 40 C. to 80 C.
- the present method of moistening the rectifier element before the electroforming is performed allows the usual voltage of 20 to 25 volts now used in the electroforming process to be increased to about 30 volts and at the same time the time for the electroforming process is reduced from the usual four hours to about one hour.
- the voltage of about 30 volts is reached in the continued electroiorming process within about five minutes, thereby reducing the usual electroforming process from about four hours to about thirty-five minutes for both periods of electroforming.
- high voltage rectifier discs may be electroiormed at a higher voltage than used before in a shorter time than it was possible and yielding high quality characteristics for' the rectifier elements.
- the steps that comprise selecting elements comprising a base plate carrying a selenium layer and a counterelectrode and electroforming said elements at a voltage up to about 25 volts for about one-half hour, interrupting the electroforming and moistening the elements, and thereafter electroforming these elements while still moist for a period of about five minutes using a progressively increasing voltage until a level of about 30 volts is reached.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Printing Plates And Materials Therefor (AREA)
Description
Patented Dec. 28, 1948 UNITED STATES PATENT OFFICE METHOD OF ELECTROFOBMING RECTIFIER ELEMENTS Murray I. Stateman, Brooklyn, N. Y., assignmto Federal Telephone and Radio Corporation, New York, N. 1., a corporation of Delaware No Darin. Application April 9, 19515,
Serial No. 587,422
mation process can be performed by the use oi direct or alternating current.
It has been observed before that the performing of the electroformation process in somewhat humid air is of beneficial yet still not satisfying influence to the electroiorm'lng process and it is also known that the use of a. higher voltage during the electroforming process is very much desired.
Realizing the beneficial effect of providing moisture to the rectifier element before the elee troforming process takes place, it has been proposed before to dip the rectifier element in wat it at a temperature range of 160 to 212 R, or go soak the rectifier element in water at room telnperature. Although these methods oi additiu moisture resulted in the advantage to achieve a higher electroforming voltage there was a tendency to apply a still higher voltage as achieved by the above mentioned proposal.
It is, therefore, the main object of the present invention to provide a method according to which a voltage higher than it has been possible up to the present time is used in the elcctroiormi na process.
It is a further object of the present invention to provide a method according to which the time of the electroforming process is shortened.
With these and other objects in view, the pres ent invention will be clearly understood from the following description.
According to the method of the present invention, the rectifier elements are first formed in the usual manner by providing, a semi-conductor layer on a base plate and then covering the semiconductor layer with a counter-electrode layer. The usual electroiorming process which follows is performed according to the present invention by moistening the rectifier elements before the electroforming process is started. This moistening can be achieved by means of steam which condenses on the cold rectifier element or by rinsing the cold rectifier element in hot water, preferably at a temperature of 40 C. to 80 C. It has been found that still better results are achieved iii 2 if both, namely, first the steaming and then the rinsing in hot water within the above mentioned temperature range is used upon the rectifier element before the electroforming process is performed. 'By exposing the rectifier element to the mentioned treatment the latter is moist when the electroiorming process is started. The steaming treatment of the rectifier element is done for a preferred time of about 15 seconds whereas the rinsing treatment canbe done in any shorter or longer time.
The present method of moistening the rectifier element before the electroforming is performed allows the usual voltage of 20 to 25 volts now used in the electroforming process to be increased to about 30 volts and at the same time the time for the electroforming process is reduced from the usual four hours to about one hour.
A still further improved method according to the present invention appears in first exposing the rectifier elements to the electroforming proceat at a voltage of up to 25 volts which will take about a half of an hour and then interrupting this eiectroforming process, exposing the partially electroformed rectifier element to the above mentioned moistening treatment by steaming or rins= ing in hot water, or both, and then continuing the electroforming process of the rectifier element which is moist from the previous treatment until a voltage of about 30 volts is reached in the continued electroforming process. The voltage of about 30 volts is reached in the continued electroiorming process within about five minutes, thereby reducing the usual electroforming process from about four hours to about thirty-five minutes for both periods of electroforming. Thus, it appears that the improved method shows further advantages over the first mentioned.
By performing the electroforming process according to the present invention high voltage rectifier discs may be electroiormed at a higher voltage than used before in a shorter time than it was possible and yielding high quality characteristics for' the rectifier elements.
While I have disclosed the principles of my invention in connection with several difierent embodiments, it will be understood that these embodiments are given by way of example only and. not as limiting the scope of the invention as set forth in the objects and the appended claims.
What I claim is:
1. In the manufacture of selenium rectifier elements, the steps that comprise selecting elements comprising a base plate carrying a selenium layer and a counterelectrode and electroforming said elements at a voltage up to about 25 volts for about one-half hour, interrupting the electroforming and moistening the elements, and thereafter electroforming these elements while still moist for a period of about five minutes using a progressively increasing voltage until a level of about 30 volts is reached.
2. The process of claim 1 wherein the moistening of the elements is performed by exposing the cold elements to steam.
3. The process of claim 1 wherein the moistening of the elements is performed by rinsing the elements in hot water.
4. The process of claim 1 wherein the moistening of the elements is performed by rinsing the elements in hot water at 2, temperature of to to 4 5. The process of claim 1 wherein the moistening of the elements is performed by exposing the cold elements to steam and thereafter rinsing said elements in hot water at a temperature of 40 to 80 C.
MURRAY J. STA'I'EMAN.
REFERENCES CITED The following references are of reeordin the 2,395,259 Ellis et a] Feb. 19, 1946
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US587422A US2457186A (en) | 1945-04-09 | 1945-04-09 | Method of electroforming rectifier elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US587422A US2457186A (en) | 1945-04-09 | 1945-04-09 | Method of electroforming rectifier elements |
Publications (1)
Publication Number | Publication Date |
---|---|
US2457186A true US2457186A (en) | 1948-12-28 |
Family
ID=24349749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US587422A Expired - Lifetime US2457186A (en) | 1945-04-09 | 1945-04-09 | Method of electroforming rectifier elements |
Country Status (1)
Country | Link |
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US (1) | US2457186A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4873139A (en) * | 1988-03-29 | 1989-10-10 | Minnesota Mining And Manufacturing Company | Corrosion resistant silver and copper surfaces |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2279187A (en) * | 1939-01-11 | 1942-04-07 | Union Switch & Signal Co | Alternating electric current rectifier of the selenium type |
US2356094A (en) * | 1943-02-11 | 1944-08-15 | Fed Telephone & Radio Corp | Method of treating selenium elements |
US2395259A (en) * | 1942-10-24 | 1946-02-19 | Bell Telephone Labor Inc | Method of making dry rectifiers |
-
1945
- 1945-04-09 US US587422A patent/US2457186A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2279187A (en) * | 1939-01-11 | 1942-04-07 | Union Switch & Signal Co | Alternating electric current rectifier of the selenium type |
US2395259A (en) * | 1942-10-24 | 1946-02-19 | Bell Telephone Labor Inc | Method of making dry rectifiers |
US2356094A (en) * | 1943-02-11 | 1944-08-15 | Fed Telephone & Radio Corp | Method of treating selenium elements |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4873139A (en) * | 1988-03-29 | 1989-10-10 | Minnesota Mining And Manufacturing Company | Corrosion resistant silver and copper surfaces |
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