US2450887A - Semiconductor - Google Patents

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Publication number
US2450887A
US2450887A US564409A US56440944A US2450887A US 2450887 A US2450887 A US 2450887A US 564409 A US564409 A US 564409A US 56440944 A US56440944 A US 56440944A US 2450887 A US2450887 A US 2450887A
Authority
US
United States
Prior art keywords
selenium
conductivity
substances
compounds
mentioned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US564409A
Other languages
English (en)
Inventor
Escoffery Charles Alexander
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Federal Telephone and Radio Corp
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE463238D priority Critical patent/BE463238A/xx
Priority to BE461942D priority patent/BE461942A/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to US564408A priority patent/US2450886A/en
Priority to US564409A priority patent/US2450887A/en
Priority to GB30788/45A priority patent/GB601430A/en
Priority to CH254387D priority patent/CH254387A/de
Priority to CH258963D priority patent/CH258963A/de
Application granted granted Critical
Publication of US2450887A publication Critical patent/US2450887A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination

Definitions

  • the present invention relates to semi-conductors and particularly to high voltage selenium conducting surface to the supply electrode.
  • This transition resistance must be as low as possible and must be independent of voltage if the operation of the rectifier is to be satisfactory.
  • the characteristic resistance curve of the blocking layer itself is dependent upon its chemical and physical composition and the magnitude of the resistances in both direction of current flow is primarily determined by the conductivity of the selenium itself.
  • the conductivity of selenium can be materially increased by a thorough conversion into a crystalline term by annealing it at a temperature close to the melting point and that the conductivity of selenium can be further increased by the addition of materials, such as pulverized halogen salts of heavy metals, alkalies, carbon powder, or organic compounds. After conversion the additional materials either appear as undecomposed matters having certain conductivity embodied in the selenium or they are mainly decomposed into oxides or selenides of good conductivity. These latter are conductive bodies and form dangerous shunting paths in the selenium and in the blocking layer itself.
  • plum-bromide brought about an increase in the forward-conductivity of the blocking layer, but at the same time a proportionate increase in the back-conductivity had to be accepted.
  • the admixture according to the present invention that means the addition of more than one halogen compound to the selenium, in contradiction to the above mentioned application in which only one halogen compound is added to the selenium, shows beneficial results where it is not only important to increase the forward-conductivity without increasing the reverse-conductivity but also to use a disc, designed for a certain voltage, at a still higher voltage than is allowed to use in the disc according to the above mentioned application.
  • the novel construction of the present rectifier has the advantage of using less rectifying discs within the rectifier stack for a certain predetermined forward-conductivity where until now a greater number of rectifying discs had to be used.
  • the improvement that comprises incorporating in the selenium layer a minor proportion of a plurality of substances selected from the class consisting of iodine compounds of chicrine and iodine compounds of bromine.

Landscapes

  • Primary Cells (AREA)
  • Photoreceptors In Electrophotography (AREA)
US564409A 1944-11-20 1944-11-20 Semiconductor Expired - Lifetime US2450887A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
BE463238D BE463238A (en(2012)) 1944-11-20
BE461942D BE461942A (en(2012)) 1944-11-20
US564408A US2450886A (en) 1944-11-20 1944-11-20 Semiconductor
US564409A US2450887A (en) 1944-11-20 1944-11-20 Semiconductor
GB30788/45A GB601430A (en) 1944-11-20 1945-11-16 Semi-conductor
CH254387D CH254387A (de) 1944-11-20 1945-11-16 Selen-Halbleiter und Verfahren zu dessen Herstellung.
CH258963D CH258963A (de) 1944-11-20 1945-11-16 Selenhalbleiter und Verfahren zu dessen Herstellung.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US564409A US2450887A (en) 1944-11-20 1944-11-20 Semiconductor

Publications (1)

Publication Number Publication Date
US2450887A true US2450887A (en) 1948-10-12

Family

ID=24254358

Family Applications (1)

Application Number Title Priority Date Filing Date
US564409A Expired - Lifetime US2450887A (en) 1944-11-20 1944-11-20 Semiconductor

Country Status (4)

Country Link
US (1) US2450887A (en(2012))
BE (2) BE463238A (en(2012))
CH (2) CH254387A (en(2012))
GB (1) GB601430A (en(2012))

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080135415A1 (en) * 2006-12-07 2008-06-12 Yongbong Han Electrodeposition technique and apparatus to form selenium containing layers

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1106424B (de) * 1953-02-10 1961-05-10 Siemens Ag Selengleichrichter, bei dem die Selen-schicht aus mindestens zwei Teilschichten mit unterschiedlichem Zusatzstoffgehalt aufgebaut ist

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB472951A (en) * 1936-04-07 1937-10-04 Marconi Wireless Telegraph Co Improvements in or relating to electrical measuring instrument arrangements
US2173249A (en) * 1935-10-30 1939-09-19 Philips Nv Asymmetric electrode system
US2226715A (en) * 1939-03-08 1940-12-31 Suddeutsche App Fabrik G M B H Rectifier device
US2227827A (en) * 1938-09-21 1941-01-07 Union Switch & Signal Co Manufacture of devices presenting electrical asymmetric conductivity
US2316905A (en) * 1939-07-01 1943-04-20 Westinghouse Electric & Mfg Co Selenium rectifier

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2173249A (en) * 1935-10-30 1939-09-19 Philips Nv Asymmetric electrode system
GB472951A (en) * 1936-04-07 1937-10-04 Marconi Wireless Telegraph Co Improvements in or relating to electrical measuring instrument arrangements
US2227827A (en) * 1938-09-21 1941-01-07 Union Switch & Signal Co Manufacture of devices presenting electrical asymmetric conductivity
US2226715A (en) * 1939-03-08 1940-12-31 Suddeutsche App Fabrik G M B H Rectifier device
US2316905A (en) * 1939-07-01 1943-04-20 Westinghouse Electric & Mfg Co Selenium rectifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080135415A1 (en) * 2006-12-07 2008-06-12 Yongbong Han Electrodeposition technique and apparatus to form selenium containing layers
US8066863B2 (en) * 2006-12-07 2011-11-29 Solopower, Inc. Electrodeposition technique and apparatus to form selenium containing layers

Also Published As

Publication number Publication date
CH258963A (de) 1948-12-31
GB601430A (en) 1948-05-05
BE463238A (en(2012))
BE461942A (en(2012))
CH254387A (de) 1948-04-30

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