US2287948A - Indium plating - Google Patents

Indium plating Download PDF

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Publication number
US2287948A
US2287948A US246064A US24606438A US2287948A US 2287948 A US2287948 A US 2287948A US 246064 A US246064 A US 246064A US 24606438 A US24606438 A US 24606438A US 2287948 A US2287948 A US 2287948A
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United States
Prior art keywords
indium
bath
water
dextrose
hydroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US246064A
Inventor
Clarence F Smart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motors Liquidation Co
Original Assignee
Motors Liquidation Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motors Liquidation Co filed Critical Motors Liquidation Co
Priority to US246064A priority Critical patent/US2287948A/en
Application granted granted Critical
Publication of US2287948A publication Critical patent/US2287948A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/54Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S29/00Metal working
    • Y10S29/022Method or apparatus using indium
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49636Process for making bearing or component thereof
    • Y10T29/49705Coating or casting
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49636Process for making bearing or component thereof
    • Y10T29/49709Specific metallic composition

Definitions

  • This invention relates to the electro dcposition of indium and has particular reference ess and bath for sition.
  • the primary object of my invention is to provide a new and improved bath and process for the electro-deposition of indium having certain advantages over baths and processes heretofore proposed for this purpose. Other objects and advantages will become apparent from the detailed description.
  • the bath of the present invention is one that has exceedingly good throwing power, is one of good eiiiciency, and one that is. easy to operate and control.
  • the allowable ranges of current densities, voltages, etc., for good deposits ar quite broad.
  • the bath is easy to make up in the to a procplating indium by electro-depo- ,first place and is free of the danger of HCN fumes, such as might occur in the making up of a cyanide bath unless the operations are performed under a well ventilated hood, etc.
  • the bath of my invention has little or no tendency to dissolve such metals as iron, nickel.
  • a bath comprising indium, dextrose, an alkali, such as sodium hydroxide or potassium hydroxide, and water has certain advantages in the electro-deposition ofindium over other baths of which I am aware.
  • the indium content may be from about one to six ounces per gallon'of water
  • dextrose may be approximately half the indium content, but preferably not under about one ounce per gallon
  • sodium hydroxide or potassium hydroxide from about six to twelve ounces per gallon.
  • the sodium hydroxide is less expensive than the potassium hydroxide and is, therefore, preferred.
  • a preferred composition is approximately as follows: indium 4 oz. per gallon of water, dextrose 3 oz. per gallon of water, and sodium hydroxide 8 oz. per gallon of water.
  • the plating bath of my invention operates well at ordinary temperature of 70 it, also at higher temperatures up to 175 F. if desired, over a wide range of voltage and current density.
  • Good, adherent, deposits of indium have been current densities from about 10 to 150 amperes per square foot of cathode area. At lower current densities the deposits are smoother than are those obtained with the higher current densities.
  • Inert anodes, such as carbon, for example, are employed.
  • the bath may be made bydissolving metallic indium in hydrochloric acid and to this solutionadding a water solution of sodium hydroxide or potassium hydroxidev or the like to which dextrose has been added.
  • the indium is first precipitated as whiteindium hydroxide and then in the presence of excess alkali and dextrose the indium redissolves leaving a clear solution. It is permissible to add the dextrose to either the concentrated sodium hydroxide or potassium hydroxide solution, or to the concentrated solution of indium in acid, and to add either one of these obtained with voltages from about 3 to 10, and
  • the indium may be dissolved in other acids such, for example, a"- suiphuric acid or nitric acid.
  • hydrochloric acid for example, a suiphuric acid or nitric acid.
  • as-excess acid can be readily removed from the solution by boiling and because the hydrochloric acid is non-oxidizing to the dextrose.
  • Soluble salts of indium may be used, if available, to dissolve directly in water without acid.
  • indium may be plated on metals of various kinds, as desired.
  • My bath is especially desirable in plating bearings or bearing alloys to render the same corrosion resisting.
  • Cadmium alloy bearings and copper-lead bearings may be readily plated with indium to provide a corrosion resisting coating thereon.
  • the plated bearings may be heat treated at about 840 F. to cause the indium to become diffused into the base metal.
  • a process forthewelectro-deposition otadherent deposits of indium comprising, passing .en electric current through an electrolyte .from'an' inert anode'to a cathodeundera voltage .oiifnom about three toten volts and with acu en tyden -"tion'at a temperature of about 70 E. to 1'25" 'F.
  • said electrolyte being :maintained during opera- CLARENCE I. SMART.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)

Description

Patented June 30, 1;;42
Clarence F. Smart,
No Drawing.
1 Claim.
g zest s r I INDIUM PLATI NGA I I a I Pontiac, Mich, assignor to General Motors Corporation, corporation of Delaware Application December 16, 1938, Serial No. 246,064
Detroit, Mich., a
This invention relates to the electro dcposition of indium and has particular reference ess and bath for sition.
The primary object of my invention is to provide a new and improved bath and process for the electro-deposition of indium having certain advantages over baths and processes heretofore proposed for this purpose. Other objects and advantages will become apparent from the detailed description.
The bath of the present invention is one that has exceedingly good throwing power, is one of good eiiiciency, and one that is. easy to operate and control. The allowable ranges of current densities, voltages, etc., for good deposits ar quite broad. The bath is easy to make up in the to a procplating indium by electro-depo- ,first place and is free of the danger of HCN fumes, such as might occur in the making up of a cyanide bath unless the operations are performed under a well ventilated hood, etc. The bath of my invention has little or no tendency to dissolve such metals as iron, nickel. cadmium, silver and copper and thus is not subject to contamination by these metals; in addition, it shows no tendency for the indium to separate on long standing, remaining clear and free from sludge. Deposits plated by the use of my bath and process are smooth, adherent and free from the dark smudge sometimes present in deposits from cyanide baths. The indium may be readily recovered from the bath.
I have discovered that a bath comprising indium, dextrose, an alkali, such as sodium hydroxide or potassium hydroxide, and water has certain advantages in the electro-deposition ofindium over other baths of which I am aware. The indium content may be from about one to six ounces per gallon'of water, dextrose may be approximately half the indium content, but preferably not under about one ounce per gallon, and sodium hydroxide or potassium hydroxide from about six to twelve ounces per gallon. The sodium hydroxide is less expensive than the potassium hydroxide and is, therefore, preferred. A preferred composition is approximately as follows: indium 4 oz. per gallon of water, dextrose 3 oz. per gallon of water, and sodium hydroxide 8 oz. per gallon of water.
The plating bath of my invention operates well at ordinary temperature of 70 it, also at higher temperatures up to 175 F. if desired, over a wide range of voltage and current density. Good, adherent, deposits of indium have been current densities from about 10 to 150 amperes per square foot of cathode area. At lower current densities the deposits are smoother than are those obtained with the higher current densities. Inert anodes, such as carbon, for example, are employed.
The bath may be made bydissolving metallic indium in hydrochloric acid and to this solutionadding a water solution of sodium hydroxide or potassium hydroxidev or the like to which dextrose has been added. The indium is first precipitated as whiteindium hydroxide and then in the presence of excess alkali and dextrose the indium redissolves leaving a clear solution. It is permissible to add the dextrose to either the concentrated sodium hydroxide or potassium hydroxide solution, or to the concentrated solution of indium in acid, and to add either one of these obtained with voltages from about 3 to 10, and
to the other with stirring to dissolve the precipitate which first forms. After mixing the concentrated solutions, water is added in order to obtain the desired solution. The solutions should be cool before mixing, as at boiling temperatures the indium'hydroxide precipitates and does not redissolve. This reaction may be made use of if it is desired to recover the indium from the bath for any reason. For example, it may be desirable to recover the indium from a partially depleted bath with too low indium content for satisfactory current efficiency. By heating the bath to a boiling temperature the indium is completely precipitated as indium hydroxide and may be separated as by filtration, or by settling and decantation. The precipitatemay be redissolved in acid and made into a new plating bath if desired.
In place of hydrochloric acid the indium may be dissolved in other acids such, for example, a"- suiphuric acid or nitric acid. I prefer the hydrochloric acid, however. .as-excess acid can be readily removed from the solution by boiling and because the hydrochloric acid is non-oxidizing to the dextrose. Soluble salts of indium may be used, if available, to dissolve directly in water without acid.
By the use of my bath and process indiummay be plated on metals of various kinds, as desired. My bath is especially desirable in plating bearings or bearing alloys to render the same corrosion resisting. Cadmium alloy bearings and copper-lead bearings may be readily plated with indium to provide a corrosion resisting coating thereon. The plated bearings may be heat treated at about 840 F. to cause the indium to become diffused into the base metal.
While I have described a preferred embodiment of my invention, 'Iam aware that many changes may be-made and numerous details varied without departing from the-principles of my invention and I do not desire to limit the patent granted for my invention except as necessitated by the prior art. Y
I claim? 7 A v A process forthewelectro-deposition otadherent deposits of indium comprising, passing .en electric current through an electrolyte .from'an' inert anode'to a cathodeundera voltage .oiifnom about three toten volts and with acu en tyden -"tion'at a temperature of about 70 E. to 1'25" 'F.
'sity' of about 10 to 5150 amperes .per square-foot oi cathode a-rea;: the electrolytebeing free of at least substantially all I cyanide and consisting of an aqueous'solution"of-the following essen-- 5 tie] con'stituen'tsdn approximately the-amounta:
given pergallon of .water: a compound of-"1n-- dii min -which the indiumcont ent ,iiis about one .tof '?six .o'unces; vdextro'e approximately half the indium content and at least one ounce, and so- 10. :dium hydroxide from'about six to twelve ounces;
said electrolyte being :maintained during opera- CLARENCE I. SMART.
US246064A 1938-12-16 1938-12-16 Indium plating Expired - Lifetime US2287948A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2423624A (en) * 1947-07-08 Indium plating
US2465329A (en) * 1944-05-20 1949-03-22 Indium Corp America Indium treated copper clad bearing and like articles and method of making the same
US2497988A (en) * 1943-05-22 1950-02-21 Vandervell Products Ltd Indium plating
US4484988A (en) * 1981-12-09 1984-11-27 Richmond Metal Finishers, Inc. Process for providing metallic articles and the like with wear-resistant coatings
US4621026A (en) * 1981-12-09 1986-11-04 Richmond Metal Finishers, Inc. Process for providing metallic articles and the like with wear-resistant coatings, and improved coated metallic articles and the like
US20090188808A1 (en) * 2008-01-29 2009-07-30 Jiaxiong Wang Indium electroplating baths for thin layer deposition
US20090315148A1 (en) * 2008-06-20 2009-12-24 Serdar Aksu Electroplating method for depositing continuous thin layers of indium or gallium rich materials
WO2017060216A1 (en) 2015-10-06 2017-04-13 Atotech Deutschland Gmbh Process for indium or indium alloy deposition and article
EP3199666A1 (en) 2016-01-29 2017-08-02 ATOTECH Deutschland GmbH Aqueous indium or indium alloy plating bath and process for deposition of indium or an indium alloy

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2423624A (en) * 1947-07-08 Indium plating
US2497988A (en) * 1943-05-22 1950-02-21 Vandervell Products Ltd Indium plating
US2465329A (en) * 1944-05-20 1949-03-22 Indium Corp America Indium treated copper clad bearing and like articles and method of making the same
US4484988A (en) * 1981-12-09 1984-11-27 Richmond Metal Finishers, Inc. Process for providing metallic articles and the like with wear-resistant coatings
US4621026A (en) * 1981-12-09 1986-11-04 Richmond Metal Finishers, Inc. Process for providing metallic articles and the like with wear-resistant coatings, and improved coated metallic articles and the like
US20090188808A1 (en) * 2008-01-29 2009-07-30 Jiaxiong Wang Indium electroplating baths for thin layer deposition
US20090315148A1 (en) * 2008-06-20 2009-12-24 Serdar Aksu Electroplating method for depositing continuous thin layers of indium or gallium rich materials
US8092667B2 (en) 2008-06-20 2012-01-10 Solopower, Inc. Electroplating method for depositing continuous thin layers of indium or gallium rich materials
WO2017060216A1 (en) 2015-10-06 2017-04-13 Atotech Deutschland Gmbh Process for indium or indium alloy deposition and article
US10753007B2 (en) 2015-10-06 2020-08-25 Atotech Deutschland Gmbh Process for indium or indium alloy deposition and article
EP3199666A1 (en) 2016-01-29 2017-08-02 ATOTECH Deutschland GmbH Aqueous indium or indium alloy plating bath and process for deposition of indium or an indium alloy
WO2017129583A1 (en) 2016-01-29 2017-08-03 Atotech Deutschland Gmbh Aqueous indium or indium alloy plating bath and process for deposition of indium or an indium alloy
US10793962B2 (en) 2016-01-29 2020-10-06 Atotech Deutschland Gmbh Aqueous indium or indium alloy plating bath and process for deposition of indium or an indium alloy

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