US2261618A - Blocking-layer electrode system - Google Patents

Blocking-layer electrode system Download PDF

Info

Publication number
US2261618A
US2261618A US313644A US31364440A US2261618A US 2261618 A US2261618 A US 2261618A US 313644 A US313644 A US 313644A US 31364440 A US31364440 A US 31364440A US 2261618 A US2261618 A US 2261618A
Authority
US
United States
Prior art keywords
electrode
contact
carrier
electrode system
blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US313644A
Other languages
English (en)
Inventor
Esselin Ludovicus Au Lambertus
Willem Christiaan Van Geel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of US2261618A publication Critical patent/US2261618A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • This invention relates taa blocking-layer elec- :trode system having flxed electrodes, particularly to act upon' electric high-frequency or termediate-frequency oscillations.
  • the invention particularly has for its purpose to establish a good electric contact between the supply conductors for such a system and the'electrodes of the system, avoiding in this case the disadvantages which are frequently inherent as additionalphenomena in known contacts which are good in themselves.
  • the advantage is obtained that a rigid connection between the contact carrier for one electrode and the opposite electrode is established independently of the intermediate layers (for example, a selenium layer having a blocking spring contacts, with which either a spring directly engages the surface of the electrode system or a solid conductive body engages this surface by means of a'spring.
  • the intermediate layers for example, a selenium layer having a blocking spring contacts, with which either a spring directly engages the surface of the electrode system or a solid conductive body engages this surface by means of a'spring.
  • the solid body establishing the contact is constituted, for example, either by the carrier plate of the next electrode system or by a cooling plate.
  • the invention consists in that the carrier plate for one electrode is mechanically connected in a rigid manner to a rigid contact-carrier for .the supply conductor of the electrode on the other side of the blocking layer, and that the said contact carrier has an entry channel for the layer and, if desired, a metal layer bearing on the latter), for the contact carrier is directly carried by the carrier-plate for the counter electrode.
  • a carrier plate has sufiicient rigidity and it can therefore be said that the distance between the contact carrier and the carrier plate is perfectly fixed by the means stated so that the contact cannot act upon the properties of-the intermediate layers, for example by an exerted pressure.
  • One advantageous form of construction is characterized by that the contact material used, which fills the entry channel to. the electrode,
  • ' is the same material constituting the surface of the electrode -which is adjacent the contact carrier.
  • a fully continuous transition is thus obtained between the contact material kept in the entry channel and the material constituting the electrode with which the contact is established.
  • the construction can be made such that the electrode consists of an alloy applied by coating and melting at low temperature and thatiithe channel of the contact carrier whichextends at a short distance over this electrode is filled withthe same alloy in such manner that the material flowed out of the mouth is united with the upper surface of the electrode to form an assembly.
  • the contact carrier To fasten the contact carrier to the carrier plate for the counter electrode, use may be made without objection of metal parts, the contact carrier itself being manufactured from insulating material. It is advantageous in this case to establish the connection to the exterior by providing a metal bush in the channel which consequently constitutes its wall.
  • An aluminium plate I constitutes the carrier plate for the electrode system.
  • a selenium layer 2 whose upper side carries a blocking layer which is so thin that it is not shown in the drawing.
  • the contact carrier is denoted by 3.
  • the rigid connection between the carrier plate I and the contact carrier 3 which is located on the other side of the blocking layer applied to the electrode 2 is established with the aid of a shell 4 which laterally embracesthe whole electrode system.
  • the shell is made of brass.
  • Theflgure further shows that the contact carrier 3 is shaped in the form of a disc and that the entry channel to the underlying electrode system is constituted by a central bore 5.
  • the disc 3 consists of a rigid insulating material, such as pertinax, and the inner wall of the bore 5 is constituted by a metal bush 3 which is constituted by tinned brass in the present example.
  • the entry channel 5 contains the contact material 3 which in the present form of construction is constituted by an alloy of tin, bismuth and cadmium and melts at a temperature a little higher than 100.
  • This alloy was introduced in the liquid condition into the entry channel and, as is shown in the figure, this liquid material has somewhat spread in the hollow space I so that a wide foot 3 has been formed. If thecontactgmaterial 3 would flow out to a further extent, the surface over which this flowing-out would take place is in any case limited by the walls of the hollow space I.
  • the contact material can be caused to fiow directly on to the blocking layer of the electrode 3 so that this material itself constituted the counter electrode.
  • the surface of this electrod is anyhowlimited by the walls of the hollow space I.
  • the exact determination of the size of the contact surface between this electrode and the blocking layer is of great importance for a large number of applications of the electrode system, for example as a detector.
  • an electrode I I was preliminarily applied by coating to the blocking layer of th electrode 2, whose surface was limited with the aid of a templet which has been removed afterwards.
  • the electrode II applied by coating consists of the same material as the contact material 3, that is to say of the above-mentioned alloy.
  • the electrode III and the contact piece I have been provided separately, a continuous assembly is definitely obtained without any transition resistance whatever.
  • the contact piece I were manufactured, for example, from compressed graphite or from graphite with a binder, a graphit layer could preliminarily be applied directly to the blocking layer of theelectrode 2 v onto the surface of an electrode Il presentfon' this layer.
  • the contact piece 3 could initially.
  • the hollow space 1 has so large an inner diameter that it contains the whole electrode II.
  • the shell 4 in th example is shaped in the form of an obtuse cone and this with an incline of about 7 at the most, and the discs and 3 constituting respectively the carrier plate for one electrode 2 and the contact carrier are pressed into the. shell in a clamped manner. Due to the small inclination angle of the shell wall, the friction is so great that the pressed parts I and 3 cannot become loose.
  • the edge I2 of the shell 4 is flanged by way of additional measure oi security.
  • Such fianging of a shell at the upper and the lower sides might also independently be used to fix the carrier plate I and the contact member 3 relatively to one another; to ensure the relative distance, in this case a distance piece is provided between these parts.
  • the shell need not be conical in this case.
  • the shell 4 in the example exhibits a base I3 on which a metal washer I4 is arranged under th carrier plate I, this washer in the present example consisting of copper.
  • This washer has such a diameter that its edges are free from the inner wall of the shell.
  • the washer I4 determines the distance of the metal plate I from the base I3 and prevents the metal plate I from being depressed to such an extent that the lower end of the shell is attained where the incline of the wall is greater than 7.
  • the washer I4 also nsures that the metal plate I lies entirely fiat.
  • the bush 3 arranged in the channel I of the contact carrier 3 constitutes a whole with a connecting strip.
  • th bush 8' is lengthened till above the disc 3.
  • the channel 5 can be, given a non-cylindrical, for example quadratic section.
  • the connecting strip II for the electrode 2 can simply be soldered to the base I3 of the shell 4.
  • the hollow space I in the example was obtained by providing a ring II under the contact carrier 3, whose inner diameter consequently determines the diameter of the hollow space 'I.
  • the stability of the features of the blocking-layer I of parts located outside the electrode system that is to say by means of the shell 4, in which are pressed the carrier plate I and the contact carrier 3. Then the contact material is provided As has already been mentioned, the shell 4 which establishes the connection between the the ring ll.
  • Said material is initially capable of being deformed so that it can fill the space between the said parts and engage theseparts and match their shape so that a good conductive contact can be established on the one hand impossible that the rigid contact is interrupted and on the other hand the occurrence of a variable pressure of the contact on the carrier is prevented. Since the contact material is still, it moreover does not undergo deformation.
  • the contact material 8 can be poured in the liquid condition into the channel 5. After the construction of the whole, it is also possible, however, to lie a small ball of a material having a low melting point in the channel and to render this liquid by heating.
  • the filling disc i4 is laid on the base i3 of the shell 4. Then the carrier plate I together with the layers preliminarily applied to it (selenium layer 2, blocking layer and, if desired, electrode ill) is pressed into the shell 4 until it abuts on the filling disc H.
  • the carrier plate I together with the layers preliminarily applied to it (selenium layer 2, blocking layer and, if desired, electrode ill) is pressed into the shell 4 until it abuts on the filling disc H.
  • a die which stands under resilient force and consequently can yield at a given pressure.
  • the disc 3 is pressed-in.
  • a stop-piece provided on the die which is so adjusted that the die is held up at the moment that the disc 3 has the correct distance from the shell 4. This distance must exactly correspond to the height of If this ring is made as a separate body, it is to be arranged beforehand.
  • An electrode system for rectifying or controlling electric high-frequency or intermediatefrequency oscillations comprising a pair of solid electrodes having a blocking layer interposed between them, characterized in that a carrier plate for one of said electrodes is mechanically connected in a rigid manner with a. rigid contact carrier for the supply conductor of the other electrode, said contact carrier having an entry channel which is filled with contact material and adjacent to which the latter electrode is disposed, said contact carrier having associated with it means for providing a recessed hollow space whose diameter is larger than that of the entrychannel of the contact carrier," the diameterof' the hollow space determining the maximum possible spreading of the contact material which is introduced into the entry channel.
  • the means for providing the recessed hollow space comprises a ring disposed on the under surface of the carrier, the inner diameter of said ring determining the diameter of the hollow space.
  • An electrode system for rectifying or controlling electric high-frequency or intermediateirequency oscillations comprising a pair of solid electrodes having a blocking layer interposed between them, characterized in that a carrier plate for one of said electrodes is mechanically connected in a rigid manner with a rigid contact carrier for the supply conductor of the other electrode, and a shell shaped in the formof an obtuse cone having an incline of about 7 at the most and having discs pressed therein in a clamped manner, said discs constituting the carrier plate for one electrode and the contact carrier for the supply conductor of the other electrode.
  • An electrode system as defined in claim 3. in which the shell is provided with a base on which a metal washer is arranged under the carrier plate, said washer having such a diameter that its edges are free from the inner wall of the shell.
  • a blocking-layer electrode system having a pair of fixed electrodes and a blocking-layer inthat the supply conductors can be easily brought terposed therebetween, a metal carrier plate supporting one of the electrodes, a contact carrier of insulating material for the second electrode fastened'to the carrier plate at a given distance from the first electrode by means located outside the electrode system, and a contact material provided between the contact carrier and the second electrode, said contact material being introduced in a molten condition.
  • the contact material consists of an alloy having a low melting point and is introduced in liquid condition into an entry channel provided in the dontact carrier, the contact material solidilying in the channel in a pile which bears on the surface of one of the electrodes of the system.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
  • Electrolytic Production Of Metals (AREA)
US313644A 1939-01-23 1940-01-12 Blocking-layer electrode system Expired - Lifetime US2261618A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE220323X 1939-01-23

Publications (1)

Publication Number Publication Date
US2261618A true US2261618A (en) 1941-11-04

Family

ID=5833859

Family Applications (1)

Application Number Title Priority Date Filing Date
US313644A Expired - Lifetime US2261618A (en) 1939-01-23 1940-01-12 Blocking-layer electrode system

Country Status (6)

Country Link
US (1) US2261618A (de)
BE (1) BE437769A (de)
CH (1) CH220323A (de)
FR (1) FR863035A (de)
GB (1) GB538131A (de)
NL (1) NL58856C (de)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2419602A (en) * 1943-08-14 1947-04-29 Standard Telephones Cables Ltd Rectifier and method of making the same
US2433566A (en) * 1942-07-22 1947-12-30 Weston Electrical Instr Corp Process for manufacturing photoelectric cells of the dry disk type
US2454846A (en) * 1945-03-22 1948-11-30 Standard Telephones Cables Ltd Rectifier stack
US2467811A (en) * 1945-03-21 1949-04-19 Gen Electric Rectifier terminal device
US2485402A (en) * 1946-05-21 1949-10-18 Gen Electric Electric rectifier and method of production
US2485593A (en) * 1943-08-14 1949-10-25 Standard Telephones Cables Ltd Rectifier and method of making the same
US2677793A (en) * 1948-07-20 1954-05-04 Sylvania Electric Prod Crystal amplifier
US2745044A (en) * 1951-09-15 1956-05-08 Gen Electric Asymmetrically conductive apparatus
US2751528A (en) * 1954-12-01 1956-06-19 Gen Electric Rectifier cell mounting
US2758262A (en) * 1952-07-02 1956-08-07 Int Standard Electric Corp Dry contact rectifier
US2887627A (en) * 1953-01-09 1959-05-19 John W Haas Rectifier and method of making the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2433566A (en) * 1942-07-22 1947-12-30 Weston Electrical Instr Corp Process for manufacturing photoelectric cells of the dry disk type
US2419602A (en) * 1943-08-14 1947-04-29 Standard Telephones Cables Ltd Rectifier and method of making the same
US2485593A (en) * 1943-08-14 1949-10-25 Standard Telephones Cables Ltd Rectifier and method of making the same
US2467811A (en) * 1945-03-21 1949-04-19 Gen Electric Rectifier terminal device
US2454846A (en) * 1945-03-22 1948-11-30 Standard Telephones Cables Ltd Rectifier stack
US2485402A (en) * 1946-05-21 1949-10-18 Gen Electric Electric rectifier and method of production
US2677793A (en) * 1948-07-20 1954-05-04 Sylvania Electric Prod Crystal amplifier
US2745044A (en) * 1951-09-15 1956-05-08 Gen Electric Asymmetrically conductive apparatus
US2758262A (en) * 1952-07-02 1956-08-07 Int Standard Electric Corp Dry contact rectifier
US2887627A (en) * 1953-01-09 1959-05-19 John W Haas Rectifier and method of making the same
US2751528A (en) * 1954-12-01 1956-06-19 Gen Electric Rectifier cell mounting

Also Published As

Publication number Publication date
CH220323A (de) 1942-03-31
NL58856C (de)
GB538131A (en) 1941-07-22
FR863035A (fr) 1941-03-21
BE437769A (de)

Similar Documents

Publication Publication Date Title
US2261618A (en) Blocking-layer electrode system
US3024299A (en) Cold press bonded semi-conductor housing joint
US3228104A (en) Method of attaching an electric connection to a semiconductor device
US2785349A (en) Electric semi-conducting devices
US3252060A (en) Variable compression contacted semiconductor devices
US2866928A (en) Electric rectifiers employing semi-conductors
US6574864B1 (en) Method for manufacturing a contact arrangement for a vacuum switching tube
US2461303A (en) Grid structure for electric discharge devices
US3476986A (en) Pressure contact semiconductor devices
US3170098A (en) Compression contacted semiconductor devices
US3226804A (en) Method of soldering peltier devices
US3337781A (en) Encapsulation means for a semiconductor device
US3209218A (en) Silicon semiconductor device
US2261725A (en) Selenium rectifier
US2390890A (en) Method of soldering
US3450962A (en) Pressure electrical contact assembly for a semiconductor device
US3062981A (en) Electron tube stem conductors having improved surface wettability
US2902747A (en) Reiter
US3317983A (en) Method of making a vibratory capacitor
US1999785A (en) Method of uniting parts
US2421047A (en) Method of attaching wires to metal surfaces
JPH1187196A (ja) キャパシタ構造およびその製造方法
US3457474A (en) Semiconductor rectifier structure having semiconductor element assembly screwed into place on support base
US3331997A (en) Silicon diode with solder composition attaching ohmic contacts
US3358196A (en) Pressure multiple electrical contact assembly for electrical devices