Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
  • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
  • H01L21/164—Oxidation and subsequent heat treatment of the foundation plate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02612—Formation types
  • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
  • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment

Definitions

• This invention relates to the manufacture of alternating electric current rectifiers of the dry surface contact type comprising a body of metal having a compound of the metal formed directly 5 thereon and more particularly rectifiers of the copper oxide type.
• Rectifiers of this character are found to exhibit during operation a phenomenon as rel gards the relatively small flow of current through the rectifier in the reverse or blocking direction, this current increasing relatively rapidly under a substantially constant voltage in the reverse direction applied to the rectifier until the our- 15 rent attains an apparently stable value which may be several times that of the initial reverse current when the voltage is first applied.
• the stable virtual value of the reverse current when an alternating current voltage is applied to the go rectifier is increased due to this effect, which accordingly determines the voltage for which the rectifier is capable of effecting satisfactory rectification in service.
• the .decrease in the apparent resistanceof the rectifiers causing this phenom- 5 enon which may be termed reverse creep" is temporary, the apparent resistance gradually increasing to its original value when the voltage is no longer applied.
• the decrease in apparent resistance constitut- 30 ing the reverse creep is dependent upon the physical and chemical constitution of the copper or other metal from which the rectifier is manufactured and the object of the present invention is to provide a process of preliminary treatment 35 of the metal body whereby the reverse creep can be wholly or partly eliminated.
• this result is attained by subjecting the copper or other metal to a preliminary heat treat- 40 ment at a suitable temperature or temperature cycle prior to the actual process of formation of the rectifier.
• the temperature range is limited by the formation of excess oxide at higher temperatures, i. e., above 700 C.
• the time required for the process to be effective is lessened by increasing temperature. As an example, at 600 C. one hour is sufficient and 5 the majority of the effect occurs during the first ten minutes.
• the copper may be allowed to cool to atmospheric temperature or passed directly through the main oxidation cycle as desired.
• the metal is chemically treated in a suitable manner, for example, in the case of copper by etching the surface with an acid or other etching agent, then the rectifier, after completion, exhibits what may be termed negative creep."
• the invention is not limited to heat treatment at the particular temperatures above referred to by way of example but includes such treatment at any temperature adapted to achieve the result above explained and effected under atmospheric conditions or in vacuo and with or without a subsequent chemical cleaning process.

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Thermal Sciences (AREA)
• Chemical Treatment Of Metals (AREA)
• Apparatuses And Processes For Manufacturing Resistors (AREA)
• Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=9763650

Family Applications (1)

Country Status (5)

Cited By (4)

Family Cites Families (3)

• 1937
  • 1937-02-08 GB GB3718/37A patent/GB491785A/en not_active Expired
  • 1937-09-21 DE DEW3259D patent/DE857527C/de not_active Expired
• 1938
  • 1938-01-27 FR FR832708D patent/FR832708A/fr not_active Expired
  • 1938-02-04 US US188812A patent/US2201709A/en not_active Expired - Lifetime
  • 1938-11-16 FR FR49946D patent/FR49946E/fr not_active Expired
  • 1938-12-24 NL NL91228A patent/NL54236C/xx active
  • 1938-12-25 DE DEW104793D patent/DE763878C/de not_active Expired

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