US20230275001A1 - Semiconductor device, semiconductor device fabrication method, and electronic device - Google Patents
Semiconductor device, semiconductor device fabrication method, and electronic device Download PDFInfo
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- US20230275001A1 US20230275001A1 US18/313,516 US202318313516A US2023275001A1 US 20230275001 A1 US20230275001 A1 US 20230275001A1 US 202318313516 A US202318313516 A US 202318313516A US 2023275001 A1 US2023275001 A1 US 2023275001A1
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/2003—Nitride compounds
Definitions
- the embodiments discussed herein are related to a semiconductor device, a semiconductor device fabrication method, and an electronic device.
- FETs field effect transistors
- a source electrode and a drain electrode are located over a semiconductor layer and in which a gate electrode is located between the source electrode and the drain electrode
- a protection film such as silicon nitride (SiN)
- SiN silicon nitride
- a diamond layer having high thermal conductivity is located over the protection film between a gate electrode and a source electrode and over the protection film between the gate electrode and a drain electrode.
- the above diamond layer may be located.
- a protection film having thermal conductivity lower than that of the diamond layer intervenes between a semiconductor layer on the drain electrode side and the diamond layer, then heat transfer from the semiconductor layer to the diamond layer is suppressed. If heat transfer from the semiconductor layer to the diamond layer is suppressed by the protection film, then the semiconductor device overheats and therefore the possibility of a failure or degradation of the characteristics increases.
- a semiconductor device including a semiconductor layer, a source electrode and a drain electrode located apart from each other over a first surface of the semiconductor layer, a gate electrode located between the source electrode and the drain electrode, a first insulating film located between the gate electrode and the source electrode over the first surface, a first diamond layer located over a second surface of the first insulating film opposite to the first surface, and a second diamond layer located between the gate electrode and the drain electrode over the first surface so as to be in contact with the first surface.
- FIG. 1 is a view for describing an example of a semiconductor device according to a first embodiment
- FIG. 2 is a view for describing an example of a semiconductor device according to a second embodiment
- FIG. 3 is a view for describing heat transfer in a semiconductor device taken as a comparative example
- FIG. 4 is a view for describing heat transfer in the semiconductor device according to the second embodiment
- FIGS. 5 A and 5 B are views for describing an example of a planar layout of an insulating film of the semiconductor device according to the second embodiment
- FIG. 6 is a view for describing a first example of a semiconductor device according to a third embodiment
- FIG. 7 is a view for describing a second example of the semiconductor device according to the third embodiment.
- FIG. 8 is a view for describing an example of a semiconductor device according to a fourth embodiment.
- FIG. 9 is a view for describing an example of a semiconductor device according to a fifth embodiment.
- FIG. 10 is a view for describing an example of a semiconductor device according to a sixth embodiment.
- FIG. 11 is a view for describing a first example of a semiconductor device according to a seventh embodiment
- FIG. 12 is a view for describing a second example of the semiconductor device according to the seventh embodiment.
- FIGS. 13 A and 13 B are views for describing an example of a method for fabricating a semiconductor device according to an eighth embodiment (part 1 );
- FIGS. 14 A and 14 B are views for describing an example of a method for fabricating a semiconductor device according to an eighth embodiment (part 2 );
- FIGS. 15 A and 15 B are views for describing an example of a method for fabricating a semiconductor device according to an eighth embodiment (part 3 );
- FIGS. 16 A and 16 B are views for describing an example of a method for fabricating a semiconductor device according to an eighth embodiment (part 4 );
- FIGS. 17 A and 17 B are views for describing an example of a method for fabricating a semiconductor device according to an eighth embodiment (part 5 );
- FIG. 18 is a view for describing an example of a semiconductor package according to a ninth embodiment.
- FIG. 19 is a view for describing an example of a power factor correction circuit according to a tenth embodiment
- FIG. 20 is a view for describing an example of a power supply device according to an eleventh embodiment.
- FIG. 21 is a view for describing an example of an amplifier according to a twelfth embodiment.
- FIG. 1 is a view for describing an example of a semiconductor device according to a first embodiment.
- FIG. 1 is a fragmentary schematic sectional view of an example of a semiconductor device.
- a semiconductor device 1 illustrated in FIG. 1 is an example of an FET.
- the semiconductor device 1 includes a semiconductor layer 2 , a source electrode 3 , a drain electrode 4 , a gate electrode 5 , an insulating film 6 , a diamond layer 7 , and a diamond layer 8 .
- one semiconductor layer or a laminated structure of two or more semiconductor layers is used as the semiconductor layer 2 .
- the one semiconductor layer or each of the two or more semiconductor layers included in the semiconductor layer 2 is formed by the use of a compound semiconductor.
- a group III-V compound semiconductor such as gallium nitride (GaN), indium phosphorus (InP), or gallium arsenide (GaAs) is used as such a compound semiconductor.
- a group IV compound semiconductor such as silicon carbide (SiC) or silicon germanium (SiGe) is used as such a compound semiconductor.
- a group IV semiconductor, such as silicon (Si) or germanium (Ge) may be used for forming the semiconductor layer 2 .
- the one semiconductor layer or at least one of the two or more semiconductor layers included in the semiconductor layer 2 may be doped with a determined impurity element.
- the source electrode 3 and the drain electrode 4 are located over one surface 2 a of the semiconductor layer 2 apart from each other.
- the gate electrode 5 is located between the source electrode 3 and the drain electrode 4 .
- the source electrode 3 , the drain electrode 4 , and the gate electrode 5 are formed by the use of various conductive materials.
- the source electrode 3 , the drain electrode 4 , and the gate electrode 5 are formed by the use of a metal material.
- the insulating film 6 is located between the gate electrode 5 and the source electrode 3 over the surface 2 a of the semiconductor layer 2 .
- the insulating film 6 is formed by the use of various insulating materials.
- the insulating film 6 is formed by the use of SiN or aluminum oxide (Al 2 O 3 or AlO).
- the insulating film 6 may be formed by the use of silicon oxide (SiO 2 or SiO), silicon oxynitride (SiON), aluminum nitride (AlN), aluminum oxynitride (AlON), or the like.
- the insulating film 6 may have a single-layer structure of one kind of insulating material or a laminated structure of the same kind of insulating material or different kinds of insulating materials.
- the insulating film 6 has a function as a protection film which protects the surface 2 a of the semiconductor layer 2 .
- the diamond layer 7 is located over a surface 6 a of the insulating film 6 opposite to the surface 2 a of the semiconductor layer 2 .
- the thermal conductivity of the diamond layer 7 is higher than that of the semiconductor layer 2 and the insulating film 6 .
- the diamond layer 7 is a polycrystalline diamond layer formed by the use of a chemical vapor deposition (CVD) method or the like.
- CVD chemical vapor deposition
- a laminated structure of plural kinds of polycrystalline diamond layers including crystal grain groups which differ in grain size distribution may be used as the diamond layer 7 .
- the diamond layer 8 is located between the gate electrode 5 and the drain electrode 4 over the surface 2 a of the semiconductor layer 2 .
- the diamond layer 8 is located in contact with the surface 2 a of the semiconductor layer 2 between the gate electrode 5 and the drain electrode 4 .
- the thermal conductivity of the diamond layer 8 is higher than that of the semiconductor layer 2 .
- the diamond layer 8 is a polycrystalline diamond layer formed by the use of the CVD method or the like. A laminated structure of plural kinds of polycrystalline diamond layers including crystal grain groups which differ in grain size distribution may be used as the diamond layer 8 .
- a determined voltage is applied between the gate electrode 5 and the source electrode 3 with the gate electrode 5 side as a high potential and a determined voltage is applied between the drain electrode 4 and the source electrode 3 with the drain electrode 4 side as a high potential.
- the semiconductor layer 2 generates heat as a result of the operation of the semiconductor device 1 .
- a comparatively high voltage is applied to the drain electrode 4 in the semiconductor device 1 , much heat is generated by the drain electrode 4 because an electric field applied to the drain electrode 4 is stronger than an electric field applied to the source electrode 3 .
- Heat generated at an edge (referred to as a “drain side gate edge”) 5 a of the gate electrode 5 on the drain electrode 4 side at which electric field concentration occurs is apt to become significant.
- the diamond layer 8 having high thermal conductivity is located between the gate electrode 5 and the drain electrode 4 so as to be in contact with the surface 2 a of the semiconductor layer 2 .
- heat generated by the semiconductor layer 2 is efficiently transferred to the diamond layer 8 .
- the drain side gate edge 5 a at which heat generated is apt to become significant is located so as to be in contact with the diamond layer 8 . Accordingly, heat generated at the drain side gate edge 5 a is efficiently transferred from the drain side gate edge 5 a to the diamond layer 8 , compared with a case where the drain side gate edge 5 a is not in contact with the diamond layer 8 .
- a voltage applied between the gate electrode 5 and the source electrode 3 is lower than a voltage applied between the gate electrode 5 and the drain electrode 4 .
- heat generated between the gate electrode 5 and the source electrode 3 is less than heat generated between the gate electrode 5 and the drain electrode 4 or heat generated at the drain side gate edge 5 a .
- the diamond layer 7 is located between the gate electrode 5 and the source electrode 3 over the surface 2 a of the semiconductor layer 2 with the insulating film 6 therebetween.
- the surface 2 a of the semiconductor layer 2 is effectively protected by locating the insulating film 6 between the gate electrode 5 and the source electrode 3 .
- Heat transferred from the semiconductor layer 2 via the insulating film 6 or heat transferred from the semiconductor layer 2 via the gate electrode 5 or the source electrode 3 is efficiently dissipated by the diamond layer 7 located over the insulating film 6 .
- FIG. 2 is a view for describing an example of a semiconductor device according to a second embodiment.
- FIG. 2 is a fragmentary schematic sectional view of an example of a semiconductor device.
- a semiconductor device 1 A illustrated in FIG. 2 is an example of a high electron mobility transistor (HEMT).
- the semiconductor device 1 A includes a substrate 10 , a semiconductor layer 20 , a source electrode 30 , a drain electrode 40 , a gate electrode 50 , an insulating film 60 , a diamond layer 70 , and a diamond layer 80 .
- HEMT high electron mobility transistor
- an SiC substrate is used as the substrate 10 .
- An SiC substrate may be a semi-insulating substrate or a conductive substrate.
- An Si substrate, a sapphire substrate, a GaN substrate, a diamond substrate, or the like may be used as the substrate 10 in place of an SiC substrate.
- the semiconductor layer 20 includes an electron transit layer 21 and an electron supply layer 22 .
- the electron transit layer 21 is located over the substrate 10 .
- the electron transit layer 21 is formed by the use of a nitride semiconductor such as GaN.
- the electron transit layer 21 may be formed by the use of a nitride semiconductor such as indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or indium aluminum gallium nitride (InAlGaN).
- the electron transit layer 21 may have a single-layer structure of one kind of nitride semiconductor or a laminated structure of one kind of nitride semiconductor or two or more kinds of nitride semiconductors.
- the electron transit layer 21 is formed by the use of an undoped nitride semiconductor.
- the electron transit layer 21 is formed over the substrate 10 by the use of a metal organic chemical vapor deposition (MOCVD) or metal organic vapor phase epitaxy (MOVPE) method or a molecular beam epitaxy (MBE) method.
- MOCVD metal organic chemical vapor deposition
- MOVPE metal organic vapor phase epitaxy
- MBE molecular beam epitaxy
- the electron transit layer 21 is also referred to as a channel layer.
- the electron supply layer 22 is located over the electron transit layer 21 .
- the electron supply layer 22 is formed by the use of a nitride semiconductor such as AlGaN.
- the electron supply layer 22 may be formed by the use of a nitride semiconductor such as indium aluminum nitride (InAlN), InAlGaN, or AlN.
- the electron supply layer 22 may have a single-layer structure of one kind of nitride semiconductor or a laminated structure of one kind of nitride semiconductor or two or more kinds of nitride semiconductors.
- the electron supply layer 22 is formed by the use of an n-type nitride semiconductor.
- the electron supply layer 22 is formed over the electron transit layer 21 by the use of the MOVPE method or the MBE method.
- the electron supply layer 22 is also referred to as a barrier layer.
- the electron transit layer 21 and the electron supply layer 22 are formed by the use of nitride semiconductors which differ in band gap.
- a hetero junction structure having band discontinuity is formed by locating over the electron transit layer 21 the electron supply layer 22 formed by the use of a nitride semiconductor having a band gap larger than that of a nitride semiconductor used for forming the electron transit layer 21 .
- a Fermi level is made higher (high energy side) than a conduction band at a junction interface between the electron transit layer 21 and the electron supply layer 22 . By doing so, a two dimensional electron gas (2DEG) 200 is generated in the electron transit layer 21 at the junction interface.
- 2DEG two dimensional electron gas
- the electron supply layer 22 formed by the use of a nitride semiconductor having a lattice constant larger than that of a nitride semiconductor used for forming the electron transit layer 21 is located over the electron transit layer 21 .
- piezo polarization occurs in the electron supply layer 22 .
- the 2DEG 200 of high concentration is generated in the electron transit layer 21 at the junction interface as a result of piezo polarization caused by spontaneous polarization of a nitride semiconductor used for forming the electron supply layer 22 and its lattice constant.
- a combination of nitride semiconductors by which this 2DEG 200 is generated near the junction interface between the electron transit layer 21 and the electron supply layer 22 is used for forming the electron transit layer 21 and the electron supply layer 22 .
- a layer made of AlN or the like may be located as an initial layer (not illustrated) between the substrate 10 and the electron transit layer 21 . Furthermore, a layer made of AlGaN or the like may be located as a buffer layer (not illustrated) between the substrate 10 and the electron transit layer 21 . A layer made of undoped AlGaN (i-type AlGaN) or the like may be located as a spacer layer (not illustrated) between the electron transit layer 21 and the electron supply layer 22 . Moreover, a layer made of n-type GaN or the like may be located as a cap layer (not illustrated) over the electron supply layer 22 .
- the semiconductor layer 20 may include one or more of an initial layer, a buffer layer, a spacer layer, and a cap layer.
- the source electrode 30 and the drain electrode 40 are located apart from each other over one surface 20 a of the semiconductor layer 20 , that is to say, over the electron supply layer 22 in the example of FIG. 2 .
- Each of the source electrode 30 and the drain electrode 40 functions as an ohmic electrode.
- the source electrode 30 and the drain electrode 40 may be connected to the electron supply layer 22 or may pierce the electron supply layer 22 and be connected to the electron transit layer 21 .
- a contact layer made of a nitride semiconductor, such as n-type GaN may be located under the source electrode 30 and the drain electrode 40 .
- the source electrode 30 and the drain electrode 40 are formed by the use of a metal material.
- a metal electrode having titanium (Ti) and aluminum (Al) located thereon is used as each of the source electrode 30 and the drain electrode 40 .
- the source electrode 30 and the drain electrode 40 are formed by the use of an evaporation method or the like.
- the gate electrode 50 is located between the source electrode 30 and the drain electrode 40 .
- the gate electrode 50 is located over the one surface 20 a of the semiconductor layer 20 , that is to say, over the electron supply layer 22 in the example of FIG. 2 .
- a cap layer made of GaN or the like or an insulating film made of oxide, nitride, oxynitride, or the like may intervene between the gate electrode 50 and the electron supply layer 22 .
- the gate electrode 50 functions as a Schottky electrode or a Schottky gate electrode.
- the gate electrode 50 is formed by the use of a metal material. For example, a metal electrode having nickel (Ni) and gold (Au) located thereon is used as the gate electrode 50 .
- the gate electrode 50 is formed by the use of the evaporation method or the like.
- the insulating film 60 is located over the one surface 20 a of the semiconductor layer 20 , that is to say, over the electron supply layer 22 in the example of FIG. 2 between the gate electrode 50 and the source electrode 30 .
- a cap layer made of GaN or the like may intervene between the insulating film 60 and the electron supply layer 22 .
- the insulating film 60 has the function of protecting the semiconductor layer 20 (electron supply layer 22 and the cap layer), for example, the function of protecting an area of the semiconductor layer 20 against an atmosphere in which the diamond layer 70 is formed.
- the insulating film 60 is formed by the use of SiN or the like. Alternatively, the insulating film 60 is formed by the use of AlN. Furthermore, SiO 2 or the like may be laminated over SiN or the like.
- the diamond layer 70 is located over a surface 60 a of the insulating film 60 opposite to the surface 20 a of the semiconductor layer 20 .
- the thermal conductivity of the diamond layer 70 is higher than that of the semiconductor layer 20 and the insulating film 60 .
- the diamond layer 70 has the function of transferring heat transferred from the semiconductor layer 20 via the insulating film 60 , heat transferred from the semiconductor layer 20 via the gate electrode 50 and the source electrode 30 , and the like and dissipating them to the outside of the diamond layer 70 .
- the diamond layer 70 is a polycrystalline diamond layer formed by the CVD method. In this case, for example, methane (CH 4 ) and hydrogen (H 2 ) are used as material gas and film formation temperature is 700 to 900° C.
- a laminated structure of plural kinds of polycrystalline diamond layers including crystal grain groups which differ in grain size distribution may be used as the diamond layer 70 .
- the diamond layer 80 is located over the surface 20 a of the semiconductor layer 20 , that is to say, over the electron supply layer 22 in the example of FIG. 2 between the gate electrode 50 and the drain electrode 40 .
- the diamond layer 80 is located so as to be in contact with the surface 20 a of the semiconductor layer 20 . That is to say, the diamond layer 80 is located directly on the surface 20 a of the semiconductor layer 20 .
- the thermal conductivity of the diamond layer 80 is higher than that of the semiconductor layer 20 .
- the diamond layer 80 has the function of transferring heat transferred from the semiconductor layer 20 , heat transferred from the semiconductor layer 20 via the gate electrode 50 and the drain electrode 40 , and the like and dissipating them to the outside of the diamond layer 80 .
- the diamond layer 80 is a polycrystalline diamond layer formed by the CVD method.
- CH 4 and H 2 are used as material gas and film formation temperature is 700 to 900° C.
- a laminated structure of plural kinds of polycrystalline diamond layers including crystal grain groups which differ in grain size distribution may be used as the diamond layer 80 .
- the semiconductor device 1 A having the above structure operates, a determined voltage is applied between the gate electrode 50 and the source electrode 30 with the gate electrode 50 side as a high potential and a determined voltage is applied between the drain electrode 40 and the source electrode 30 with the drain electrode 40 side as a high potential. It is assumed that the semiconductor device 1 A is used as a semiconductor device capable of a high output and high-voltage operation. Accordingly, a comparatively high voltage is applied to the drain electrode 40 . For example, a high voltage of 30 to 50 volts is applied to the drain electrode 40 . The semiconductor layer 20 generates heat as a result of the operation of the semiconductor device 1 A.
- drain side gate edge When a comparatively high voltage is applied to the drain electrode 40 in the semiconductor device 1 A, much heat is generated by the drain electrode 40 because an electric field applied to the drain electrode 40 is stronger than an electric field applied to the source electrode 30 . Heat generated at an edge (referred to as a “drain side gate edge”) 50 a of the gate electrode 50 on the drain electrode 40 side at which electric field concentration occurs is apt to become significant.
- the diamond layer 80 having high thermal conductivity is located between the gate electrode 50 and the drain electrode 40 so as to be in contact with the surface 20 a of the semiconductor layer 20 .
- heat generated on the drain electrode 40 side of the gate electrode 50 including the drain side gate edge 50 a is efficiently transferred to the diamond layer 80 and is dissipated. This will be described by reference to FIGS. 3 and 4 .
- FIG. 3 is a view for describing heat transfer in a semiconductor device taken as a comparative example.
- FIG. 4 is a view for describing heat transfer in the semiconductor device according to the second embodiment.
- FIGS. 3 and 4 is a fragmentary schematic sectional view of an example of a semiconductor device.
- a semiconductor device 1000 illustrated in FIG. 3 has a structure in which a diamond layer 80 is located between a gate electrode 50 and a drain electrode 40 over a surface 20 a of a semiconductor layer 20 with an insulating film 1010 therebetween.
- the semiconductor device 1000 differs from the above semiconductor device 1 A ( FIG. 2 and FIG. 4 ) in this respect.
- the same kind of insulating material that is used for forming an insulating film 60 is used for forming the insulating film 1010 .
- SiN is used for forming the insulating film.
- Partial heat 310 of heat 300 generated by the semiconductor layer 20 , is transferred via the insulating film 60 between the gate electrode 50 and a source electrode 30 to a diamond layer 70 located thereover.
- Another partial heat 320 of the heat 300 generated by the semiconductor layer 20 , is transferred via the insulating film 1010 between the gate electrode 50 and the drain electrode 40 to the diamond layer 80 located thereover.
- the diamond layer 70 transfers and dissipates the heat to the outside.
- the diamond layer 80 transfers and dissipates the heat to the outside. As a result, heat generated by the semiconductor layer 20 is dissipated or the semiconductor layer 20 is cooled.
- the diamond layer 80 is located over the surface 20 a of the semiconductor layer 20 with the insulating film 1010 having comparatively low thermal conductivity therebetween on the drain electrode 40 side of the gate electrode 50 where comparatively much heat is generated. Accordingly, heat transfer from the semiconductor layer 20 to the diamond layer 80 is suppressed by the insulating film 1010 and it may be that heat generated by the semiconductor layer 20 is not sufficiently dissipated. Furthermore, with the semiconductor device 1000 , as indicated in a dashed circle 340 of FIG. 3 , a drain side gate edge 50 a which is apt to generate significantly much heat is in contact not with the diamond layer 80 but with the insulating film 1010 .
- heat transfer from the drain side gate edge 50 a to the diamond layer 80 is suppressed by the insulating film 1010 and it may be that heat generated by the semiconductor layer 20 is not sufficiently dissipated. If heat generated by the semiconductor layer 20 is not sufficiently dissipated, then the temperature of the semiconductor layer 20 rises and the semiconductor device 1000 overheats. This increases the possibility of a failure or degradation of the characteristics of the transistor.
- the diamond layer 80 is located directly on the surface 20 a of the semiconductor layer 20 between the gate electrode 50 and the drain electrode 40 .
- Partial heat 310 of heat 300 generated by the semiconductor layer 20 , is transferred via the insulating film 60 between the gate electrode 50 and the source electrode 30 to the diamond layer 70 located thereover.
- Another partial heat 330 of the heat 300 generated by the semiconductor layer 20 , is transferred directly to the diamond layer 80 between the gate electrode 50 and the drain electrode 40 .
- the diamond layer 70 transfers the heat transferred to the diamond layer 70 and dissipates it to the outside.
- the diamond layer 80 transfers the heat transferred to the diamond layer 80 and dissipates it to the outside. As a result, heat generated by the semiconductor layer 20 is dissipated or the semiconductor layer 20 is cooled.
- the diamond layer 80 is located directly on the surface 20 a of the semiconductor layer 20 on the drain electrode 40 side of the gate electrode 50 where comparatively much heat is generated. Accordingly, with the semiconductor device 1 A heat generated by the semiconductor layer 20 is efficiently transferred from the semiconductor layer 20 to the diamond layer 80 . Furthermore, with the semiconductor device 1 A, as indicated in a dashed circle 341 of FIG. 4 , the drain side gate edge 50 a which is apt to generate significantly much heat is in contact not with the above insulating film 1010 but with the diamond layer 80 . As a result, heat generated by the drain side gate edge 50 a is efficiently transferred from the drain side gate edge 50 a to the diamond layer 80 .
- the heat generated by the semiconductor layer 20 may be transferred not only to the diamond layer 70 and the diamond layer 80 but also to other components such as the gate electrode 50 , the source electrode 30 , the drain electrode 40 , and the substrate 10 . Furthermore, heat transferred to the other components may be dissipated from the other components or may be transferred further from the other components to still other components and be dissipated.
- a voltage applied between the gate electrode 50 and the source electrode 30 is lower than a voltage applied between the gate electrode 50 and the drain electrode 40 .
- heat generated between the gate electrode 50 and the source electrode 30 is less than heat generated between the gate electrode 50 and the drain electrode 40 or heat generated at the drain side gate edge 50 a .
- the diamond layer 70 is located between the gate electrode 50 and the source electrode 30 over the surface 20 a of the semiconductor layer 20 with the insulating film 60 therebetween.
- the surface 20 a of the semiconductor layer 20 is effectively protected by locating the insulating film 60 between the gate electrode 50 and the source electrode 30 .
- Heat transferred from the semiconductor layer 20 via the insulating film 60 or heat transferred from the semiconductor layer 20 via the gate electrode 50 or the source electrode 30 is efficiently dissipated by the diamond layer 70 located over the insulating film 60 .
- FIGS. 5 A and 5 B are views for describing an example of a planar layout of the insulating film of the semiconductor device according to the second embodiment.
- Each of FIGS. 5 A and 5 B is a fragmentary schematic plan view of an example of a semiconductor device.
- FIG. 2 is a sectional view corresponding to the position of the line IIa-IIa of FIG. 5 A or the line IIb-IIb of FIG. 5 B .
- the above diamond layer 70 or the above diamond layer 80 is not illustrated in FIGS. 5 A and 5 B .
- the insulating film 60 which covers the whole of the surface 20 a of the semiconductor layer 20 between the gate electrode 50 and the source electrode 30 is located. Such an insulating film 60 is not located over the surface 20 a of the semiconductor layer 20 between the gate electrode 50 and the drain electrode 40 .
- the insulating film 60 is located between the gate electrode 50 and the source electrode 30 and an insulating film 60 B which partially covers the surface 20 a of the semiconductor layer 20 may be located between the gate electrode 50 and the drain electrode 40 .
- an insulating film 60 B having one or more openings 60 Ba leading to the surface 20 a between the gate electrode 50 and the drain electrode 40 is located.
- an insulating film 60 B having three openings 60 Ba is located.
- the insulating film 60 B is formed by the use of an insulating material such as SiN. This is the same with the insulating film 60 .
- the surface 20 a of the semiconductor layer 20 is also partially covered with the insulating film 60 B between the gate electrode 50 and the drain electrode 40 .
- the diamond layer 80 ( FIG. 2 ) is located directly on an area not covered with the insulating film 60 B, of the surface 20 a of the semiconductor layer 20 between the gate electrode 50 and the drain electrode 40 , that is to say, on an area corresponding to the openings 60 Ba. As a result, efficient heat transfer is performed from the semiconductor layer 20 to the diamond layer 80 .
- the shape of the insulating film 60 B (or the openings 60 Ba) located between the gate electrode 50 and the drain electrode 40 is not limited to that illustrated in FIG. 5 B .
- FIG. 6 is a view for describing a first example of a semiconductor device according to a third embodiment.
- FIG. 6 is a fragmentary schematic sectional view of an example of a semiconductor device.
- a surface 20 a of a semiconductor layer 20 includes a concave portion 20 b formed in an area of an electron supply layer 22 between a gate electrode 50 and a drain electrode 40 and a diamond layer 80 is located in the concave portion 20 b .
- the semiconductor device 1 B differs from the semiconductor device 1 A according to the above second embodiment in this respect.
- the surface 20 a of the semiconductor layer 20 includes the inside of the concave portion 20 b formed in the electron supply layer 22 .
- the diamond layer 80 is located in the concave portion 20 b formed in the electron supply layer 22 so as to be in contact with the inside of the concave portion 20 b .
- heat generated by the semiconductor layer 20 is efficiently transferred from the semiconductor layer 20 to the diamond layer 80 . This is the same with the above semiconductor device 1 A.
- the diamond layer 80 With the semiconductor device 1 B in which the diamond layer 80 is located in the concave portion 20 b , the diamond layer 80 is in contact with the inside of the concave portion 20 b . This increases contact area between the diamond layer 80 and the semiconductor layer 20 . As a result, heat is transferred more efficiently from the semiconductor layer 20 to the diamond layer 80 . Furthermore, with the semiconductor device 1 B a drain side gate edge 50 a of the gate electrode 50 is in contact with a side of the diamond layer 80 . As a result, contact between the drain side gate edge 50 a and the diamond layer 80 is easily realized and efficient heat transfer from the drain side gate edge 50 a to the diamond layer 80 is easily realized.
- an overheat of the semiconductor device 1 B or a failure or degradation of the characteristics of the transistor caused by it is effectively suppressed.
- the concave portion 20 b is formed in the electron supply layer 22 .
- a portion 22 a of the electron supply layer 22 between the gate electrode 50 and the drain electrode 40 is thinner than another portion of the electron supply layer 22 .
- a thickness T 1 of the portion 22 a of the electron supply layer 22 between the gate electrode 50 and the drain electrode 40 is smaller than a thickness T 2 of a portion 22 b of the electron supply layer 22 between the gate electrode 50 and the source electrode 30 .
- polarization in the portion 22 a of the electron supply layer 22 on the drain electrode 40 side is weaker than polarization in another portion, such as the portion 22 b on the source electrode 30 side, of the electron supply layer 22 .
- the concave portion 20 b is formed in the electron supply layer 22 , the portion 22 a of the electron supply layer 22 on the drain electrode 40 side is made thin, and polarization in the portion 22 a is weakened. By doing so, the concentration of a 2DEG 200 generated in an electron transit layer 21 bonded to the portion 22 a is lowered. That is to say, with the semiconductor device 1 B the concentration of the 2DEG 200 generated on the drain electrode 40 side is lower than that of the 2DEG 200 generated on the source electrode 30 side. In other words, a carrier modulation effect is obtained.
- the semiconductor device 1 B having a high breakdown voltage is realized by lowering in this way the concentration of the 2DEG 200 on the drain electrode 40 side.
- the depth of the concave portion 20 b formed in the electron supply layer 22 is set to a value smaller than or equal to half of the thickness of the electron supply layer 22 . If the depth of the concave portion 20 b is set to a value greater than half of the thickness of the electron supply layer 22 , then polarization is excessively weakened and it may be that the 2DEG 200 which functions as a carrier is not obtained.
- the depth of the concave portion 20 b is set within half of the thickness of the electron supply layer 22 on the basis of the degree of a target low concentration of the 2DEG 200 and the like.
- FIG. 7 is a view for describing a second example of the semiconductor device according to the third embodiment.
- FIG. 7 is a fragmentary schematic sectional view of an example of a semiconductor device.
- a diamond layer 80 and a drain electrode 40 are located in a concave portion 20 b formed in an electron supply layer 22 .
- the semiconductor device 1 C differs from the above semiconductor device 1 B illustrated in FIG. 6 in this respect.
- the concave portion 20 b may be formed in an area of the electron supply layer 22 between a gate electrode 50 and the drain electrode 40 and in an area of the electron supply layer 22 corresponding to the drain electrode 40 .
- the semiconductor device 1 C the same effect that is obtained by the above semiconductor device 1 B is achieved.
- the diamond layer 80 and the drain electrode 40 are located in the concave portion 20 b .
- a side of the diamond layer 80 on the drain electrode 40 side is wholly in contact with the drain electrode 40 . That is to say, with the semiconductor device 1 C not only contact area between the diamond layer 80 and a semiconductor layer 20 but also contact area between the diamond layer 80 and the drain electrode 40 increases.
- efficient heat transfer between the diamond layer 80 and the semiconductor layer 20 and efficient heat transfer between the diamond layer 80 and the drain electrode 40 are realized.
- FIG. 8 is a view for describing an example of a semiconductor device according to a fourth embodiment.
- FIG. 8 is a fragmentary schematic sectional view of an example of a semiconductor device.
- a cap layer 90 is located over an electron supply layer 22 of a semiconductor layer 20 .
- the semiconductor device 1 D differs from the above semiconductor device 1 C according to the third embodiment ( FIG. 7 ) in this respect.
- the cap layer 90 is formed by the use of a nitride semiconductor such as n-type GaN.
- the cap layer 90 has the function of protecting the electron supply layer 22 . If the cap layer 90 is located over the electron supply layer 22 as with the semiconductor device 1 D, then the depth of a concave portion 20 b to be formed is set so as to pierce the cap layer 90 and reach the inside of the electron supply layer 22 . By doing so, a portion of the electron supply layer 22 on the drain electrode 40 side is made thinner than another portion of the electron supply layer 22 , the concentration of a 2DEG 200 generated on the drain electrode 40 side of an electron transit layer 21 is lowered, and the semiconductor device 1 D having a high breakdown voltage is realized.
- a semiconductor device obtained by locating the cap layer 90 in the semiconductor layer 20 of the above semiconductor device 1 C according to the third embodiment ( FIG. 7 ) is taken as the semiconductor device 1 D.
- the cap layer 90 may be located in the same way in the semiconductor layer 20 of the above semiconductor device 1 A according to the second embodiment ( FIG. 2 ) or in the semiconductor layer 20 of the above semiconductor device 1 B according to the third embodiment ( FIG. 6 ).
- a p-type GaN layer or an InGaN layer may be located as a cap layer used in a HEMT so as to be specifically situated just under a gate electrode 50 . If a p-type GaN layer is located just under the gate electrode 50 , then a conduction band at the junction interface between the electron transit layer 21 and the electron supply layer 22 under the gate electrode 50 is pushed up by a fixed charge of the p-type GaN layer and the generation of the 2DEG 200 is suppressed.
- an InGaN layer is located just under the gate electrode 50 , then a conduction band at the junction interface between the electron transit layer 21 and the electron supply layer 22 under the gate electrode 50 is pushed up by piezo polarization generated in the InGaN layer and the generation of the 2DEG 200 is suppressed.
- a current flowing between a source electrode 30 and the drain electrode 40 is shut off when a gate voltage is off. That is to say, what is call a normally-off HEMT is realized.
- FIG. 9 is a view for describing an example of a semiconductor device according to a fifth embodiment.
- FIG. 9 is a fragmentary schematic sectional view of an example of a semiconductor device.
- an insulating film 60 formed over a surface 20 a of a semiconductor layer 20 lies between a gate electrode 50 and a source electrode 30 and just under the gate electrode 50 .
- the semiconductor device 1 E differs from the above semiconductor device 1 C according to the third embodiment ( FIG. 7 ) in this respect.
- the semiconductor device 1 E part of the insulating film 60 intervenes as a gate insulating film 61 between the gate electrode 50 and the surface 20 a of the semiconductor layer 20 . That is to say, the semiconductor device 1 E is an example of a metal insulator semiconductor (MIS)-type HEMT. With the semiconductor device 1 E the gate insulating film 61 intervenes between the gate electrode 50 and the semiconductor layer 20 . As a result, the generation of a leakage current between the gate electrode 50 and the semiconductor layer 20 is suppressed compared with a case where a Schottky connection of the gate electrode 50 with the semiconductor layer 20 is formed. Furthermore, with the semiconductor device 1 E the gate insulating film 61 intervenes between the gate electrode 50 and the semiconductor layer 20 .
- MIS metal insulator semiconductor
- the insulating film 60 located as a foundation of a diamond layer 70 between the gate electrode 50 and the source electrode 30 is extended so as to lie just under the gate electrode 50 , and part of the extended insulating film 60 is used as the gate insulating film 61 . That is to say, with the semiconductor device 1 E a foundation insulating film 62 located just under the diamond layer 70 between the gate electrode 50 and the source electrode 30 and the gate insulating film 61 located just under the gate electrode 50 are integrally formed as the insulating film 60 .
- the foundation insulating film 62 located just under the diamond layer 70 between the gate electrode 50 and the source electrode 30 and the gate insulating film 61 located just under the gate electrode 50 may separately be formed.
- the foundation insulating film 62 and the gate insulating film 61 may be formed by the use of the same kind of insulating material or different kinds of insulating materials.
- each of the foundation insulating film 62 and the gate insulating film 61 may have a single-layer structure of one kind of insulating material or a laminated structure of the same kind of insulating material or different kinds of insulating materials.
- a semiconductor device obtained by forming the foundation insulating film 62 and the gate insulating film 61 in the above semiconductor device 1 C according to the third embodiment ( FIG. 7 ) is taken as the semiconductor device 1 E.
- the foundation insulating film 62 and the gate insulating film 61 may be formed in the same way in the above semiconductor device 1 A according to the second embodiment ( FIG. 2 ), the above semiconductor device 1 B according to the third embodiment ( FIG. 6 ), or the above semiconductor device 1 D according to the fourth embodiment ( FIG. 8 ).
- FIG. 10 is a view for describing an example of a semiconductor device according to a sixth embodiment.
- FIG. 10 is a fragmentary schematic sectional view of an example of a semiconductor device.
- an insulating film 60 A is formed by the use of an insulating material which differs from an insulating material used for forming the above insulating film 60 (foundation insulating film 62 and the gate insulating film 61 ) in band gap.
- the semiconductor device 1 F differs from the above semiconductor device 1 E according to the fifth embodiment ( FIG. 9 ) in this respect.
- the insulating film 60 A includes a foundation insulating film 62 A located just under a diamond layer 70 between a gate electrode 50 and a source electrode 30 and a gate insulating film 61 A located just under the gate electrode 50 .
- An insulating material such as Al 2 O 3 , is used for forming the insulating film 60 A.
- an insulating material, such as SiO 2 , SiON, or AlON may be used for forming the insulating film 60 A.
- the semiconductor device 1 F in which the insulating film 60 A is formed is achieved by the semiconductor device 1 F in which the insulating film 60 A is formed. That is to say, for example, the generation of a leakage current between the gate electrode 50 and a semiconductor layer 20 is suppressed, the heat resistance of the gate electrode 50 is improved, and a drop in gate forward rising voltage is suppressed.
- the band gap of an insulating material, such as Al 2 O 3 , used for forming the insulating film 60 A is wider than that of SiN taken as an insulating material used for forming the above insulating film 60 . Furthermore, the difference in band gap between an insulating material, such as Al 2 O 3 , used for forming the insulating film 60 A and an electron supply layer 22 of the semiconductor layer 20 formed by the use of n-type AlGaN or the like becomes larger.
- the gate insulating film 61 A having a high barrier property intervenes between the gate electrode 50 and the semiconductor layer 20 by using an insulating material, such as Al 2 O 3 , for forming the insulating film 60 A. As a result, a voltage applied to the gate electrode 50 is increased and a high output semiconductor device 1 F is realized.
- the foundation insulating film 62 A and the gate insulating film 61 A are integrally formed as the insulating film 60 A.
- the foundation insulating film 62 A and the gate insulating film 61 A may separately be formed.
- an insulating material such as Al 2 O 3 , having a comparatively wide band gap is used for forming the gate insulating film 61 A
- the same kind of insulating material or different kinds of insulating materials may be used for forming the foundation insulating film 62 A and the gate insulating film 61 A.
- each of the foundation insulating film 62 A and the gate insulating film 61 A may have a single-layer structure of one kind of insulating material or a laminated structure of the same kind of insulating material or different kinds of insulating materials.
- An insulating material, such as Al 2 O 3 , in the sixth embodiment may be used for forming the insulating film 60 of the above semiconductor device 1 A according to the second embodiment ( FIG. 2 ), the above semiconductor device 1 B according to the third embodiment ( FIG. 6 ), the above semiconductor device 1 C according to the third embodiment ( FIG. 7 ), or the above semiconductor device 1 D according to the fourth embodiment ( FIG. 8 ).
- FIG. 11 is a view for describing a first example of a semiconductor device according to a seventh embodiment.
- FIG. 11 is a fragmentary schematic sectional view of an example of a semiconductor device.
- a semiconductor device 1 G illustrated in FIG. 11 includes a diamond layer 100 located so as to cover a gate electrode 50 , a diamond layer 70 , a diamond layer 80 , a source electrode 30 , and a drain electrode 40 . Furthermore, the semiconductor device 1 G includes vias 110 and 120 formed so as to pierce the diamond layer 100 and reach the source electrode 30 and the drain electrode 40 respectively, and a wiring 130 and a wiring 140 formed over the diamond layer 100 so as to be connected to the vias 110 and 120 respectively. The semiconductor device 1 G also includes a via (not illustrated) formed so as to pierce the diamond layer 100 and reach the gate electrode 50 , and a wiring (not illustrated) formed over the diamond layer 100 so as to be connected to the via.
- the via 110 , the via 120 , and the like and the wiring 130 , the wiring 140 , and the like are formed by the use of various conductive materials such as copper (Cu) or Al.
- the semiconductor device 1 G differs from the above semiconductor device 1 E according to the fifth embodiment ( FIG. 9 ) in that it has the above structure.
- a determined voltage is applied between the wiring connected via the via to the gate electrode 50 and the wiring 130 connected via the via 110 to the source electrode 30 with the gate electrode 50 side as a high potential. Furthermore, a determined voltage is applied between the wiring 130 connected via the via 110 to the source electrode 30 and the wiring 140 connected via the via 120 to the drain electrode 40 with the drain electrode 40 side as a high potential.
- a semiconductor layer 20 generates heat as a result of the operation of the semiconductor device 1 G.
- heat generated by the semiconductor layer 20 is transferred via an insulating film 60 to the diamond layer 70 .
- heat generated by the semiconductor layer 20 is transferred directly to the diamond layer 80 .
- Heat generated at a drain side gate edge 50 a of the gate electrode 50 at which electric field concentration occurs is transferred from the drain side gate edge 50 a to the diamond layer 80 .
- the heat transferred to the diamond layer 70 and the diamond layer 80 is transferred further to the diamond layer 100 and is dissipated via the diamond layer 100 .
- the heat generated by the semiconductor layer 20 is transferred to the diamond layer 70 and the diamond layer 80 and is efficiently transferred further to the diamond layer 100 .
- an overheat of the semiconductor device 1 G or a failure or degradation of the characteristics of the transistor caused by it is effectively suppressed.
- the heat generated by the semiconductor layer 20 may be transferred not only to the diamond layer 70 , the diamond layer 80 , and the diamond layer 100 but also to other components such as the gate electrode 50 , the source electrode 30 , the drain electrode 40 , and a substrate 10 . Furthermore, heat transferred to the other components may be dissipated from the other components or may be transferred further from the other components to still other components and be dissipated.
- the diamond layer 100 , the via 110 , the via 120 , the wiring 130 , the wiring 140 , and the like in the seventh embodiment may be formed in the same way in the above semiconductor device 1 A according to the second embodiment ( FIG. 2 ), the above semiconductor device 1 B according to the third embodiment ( FIG. 6 ), the above semiconductor device 1 C according to the third embodiment ( FIG. 7 ), the above semiconductor device 1 D according to the fourth embodiment ( FIG. 8 ), or the above semiconductor device 1 F according to the sixth embodiment ( FIG. 10 ).
- FIG. 12 is a view for describing a second example of the semiconductor device according to the seventh embodiment.
- FIG. 12 is a fragmentary schematic sectional view of an example of a semiconductor device.
- a diamond layer 150 is formed on a surface 10 b opposite to a surface 20 a of a semiconductor layer 20 .
- a diamond layer 150 is formed on a surface 10 b of a substrate 10 opposite to a semiconductor layer 20 .
- the semiconductor device 1 H differs from the semiconductor device 1 G described in the above first example ( FIG. 11 ) in this respect.
- the diamond layer 150 is formed on the surface 10 b of the substrate 10 . Accordingly, heat generated by the semiconductor layer 20 as a result of the operation of the semiconductor device 1 H and transferred to the substrate 10 is further transferred efficiently to the diamond layer 150 and is dissipated. This effectively suppresses a rise in the temperature of the semiconductor layer 20 . As a result, an overheat of the semiconductor device 1 H or a failure or degradation of the characteristics of the transistor caused by it is suppressed more effectively.
- the diamond layer 150 in the seventh embodiment may be formed in the same way in the above semiconductor device 1 A according to the second embodiment ( FIG. 2 ), the above semiconductor device 1 B according to the third embodiment ( FIG. 6 ), the above semiconductor device 1 C according to the third embodiment ( FIG. 7 ), the above semiconductor device 1 D according to the fourth embodiment ( FIG. 8 ), the above semiconductor device 1 E according to the fifth embodiment ( FIG. 9 ), or the above semiconductor device 1 F according to the sixth embodiment ( FIG. 10 ).
- FIGS. 13 A through 17 B are views for describing an example of a method for fabricating a semiconductor device according to an eighth embodiment.
- FIG. 13 A , FIG. 13 B , FIG. 14 A , FIG. 14 B , FIG. 15 A , FIG. 15 B , FIG. 16 A , FIG. 16 B , FIG. 17 A , and FIG. 17 B is a fragmentary schematic sectional view of a process for fabricating a semiconductor device.
- a semiconductor layer 20 is formed over a substrate 10 .
- an SiC substrate is used as the substrate 10 .
- An electron transit layer 21 and an electron supply layer 22 of the semiconductor layer 20 are laminated over the substrate 10 by crystal growth by the use of the MOVPE method.
- undoped GaN i-type GaN
- n-type Al x Ga 1-x N (0 ⁇ x ⁇ 1) is crystal-grown as the electron supply layer 22 .
- i-type GaN having a thickness of about 1 ⁇ m is crystal-grown as the electron transit layer 21 and n-type Al 0.2 Ga 0.8 N (Al ingredient x is 0.2) having a thickness of 5 to 20 nm is crystal-grown as the electron supply layer 22 .
- AlN or the like may be crystal-grown over the substrate 10 as an initial layer or AlGaN or the like may be crystal-grown over the substrate 10 as a buffer layer.
- a spacer layer may be formed over the electron transit layer 21 by the use of i-type AlGaN or the like.
- a cap layer may be formed over the electron supply layer 22 by the use of n-type GaN or the like.
- TMGa tri-methyl-gallium
- NH 3 ammonia
- TMGa tri-methyl-aluminum
- TMGa tri-methyl-aluminum
- NH 3 tri-methyl-aluminum
- TMAl tri-methyl-aluminum
- TMAl tri-methyl-aluminum
- NH 3 is used for crystal-growing AlGaN.
- TMAl tri-methyl-aluminum
- TMAl which serves as an Al source
- NH 3 is used for crystal-growing AlN.
- the supply and stoppage (switching) of TMAl or TMGa and a flow rate at supply time (ratio of TMAl or TMGa to another material) are properly set according to a nitride semiconductor to be crystal-grown.
- the flow rate of NH 3 which is a common material of GaN and AlGaN (and AlN in the case of AlN being crystal-grown) is about 100 ml/m to 10 L/m.
- Crystal growth pressure is about 50 to 300 Torr (1 Torr is approximately equal to 133.322 Pa) and crystal growth temperature is about 1000 to 2000° C.
- argon (Ar) ions are implanted from a surface 20 a of the semiconductor layer 20 on the electron supply layer 22 side to perform isolation (not illustrated).
- a concave portion 20 b is formed in a portion of the semiconductor layer 20 between a region 51 where a gate electrode 50 is to be formed (gate electrode formation scheduled region) and a region 41 where a drain electrode 40 is to be formed (drain electrode formation scheduled region) and in the drain electrode formation scheduled region 41 of the semiconductor layer 20 .
- a resist film having an opening over the portion between the gate electrode formation scheduled region 51 and the drain electrode formation scheduled region 41 and over the drain electrode formation scheduled region 41 is formed over the semiconductor layer 20 by the use of a photolithography technique.
- the concave portion 20 b having a determined depth is formed in the electron supply layer 22 of the semiconductor layer 20 exposed in the opening of the resist film by dry etching using chlorine-based gas.
- the concave portion 20 b is formed in the electron supply layer 22 of the semiconductor layer 20 .
- the surface 20 a including the inside of the concave portion 20 b is formed.
- the concave portion 20 b is formed in the electron supply layer 22 of the semiconductor layer 20 , the electron supply layer 22 in the portion between the gate electrode formation scheduled region 51 and the drain electrode formation scheduled region 41 and the drain electrode formation scheduled region 41 becomes thinner than the electron supply layer 22 in the other region. This lowers the concentration of a 2DEG 200 generated in the electron transit layer 21 in the portion between the gate electrode formation scheduled region 51 and the drain electrode formation scheduled region 41 and the drain electrode formation scheduled region 41 .
- a source electrode 30 and the drain electrode 40 are formed over the surface 20 a of the semiconductor layer 20 .
- a resist film having openings over a region where the source electrode 30 is to be formed (source electrode formation scheduled region) 31 and the drain electrode formation scheduled region 41 ( FIG. 13 B ) is formed by the use of the photolithography technique.
- Ti is deposited over the whole surface.
- Al is deposited over Ti.
- the resist film and Ti and Al deposited thereover are removed (lift off method). By doing so, the source electrode 30 and the drain electrode 40 each having a laminated structure of Ti and Al are formed over the source electrode formation scheduled region 31 and the drain electrode formation scheduled region 41 , respectively, of the semiconductor layer 20 .
- heat treatment is performed in an atmosphere of nitrogen at a temperature of 400 to 1000° C. By doing so, an ohmic connection of the source electrode 30 and the drain electrode 40 is established. If an ohmic connection is established by forming electrode metal for the source electrode 30 and the drain electrode 40 , then heat treatment is not always needed.
- an insulating film 160 is formed over the surface 20 a of the semiconductor layer 20 .
- the insulating film 160 is the insulating film 60 (SiN, for example) in the above second, third, fourth, fifth, or seventh embodiment or the insulating film 60 A (Al 2 O 3 , for example) in the above sixth embodiment. If an SiN film is formed as the insulating film 160 (if the above insulating film 60 is formed), then an SiN film having a thickness of about 10 to 100 nm is deposited over the semiconductor layer 20 by the use of a plasma CVD method. For example, an SiN film having a thickness of 40 nm is deposited.
- an Al 2 O 3 film is formed as the insulating film 160 (if the above insulating film 60 A is formed), then an Al 2 O 3 film having a thickness of about 1 to 100 nm is deposited over the semiconductor layer 20 by the use of an atomic layer deposition (ALD) method.
- ALD atomic layer deposition
- an Al 2 O 3 film having a thickness of 10 nm is deposited.
- an SiN film deposited by the use of the plasma CVD method or an Al 2 O 3 film deposited by the use of the ALD method may be deposited not only over the semiconductor layer 20 but also over the source electrode 30 and the drain electrode 40 .
- the insulating film 160 between the gate electrode formation scheduled region 51 and the drain electrode 40 over the surface 20 a of the semiconductor layer 20 that is to say, the insulating film 160 in the concave portion 20 b of the semiconductor layer 20 is removed.
- a resist film having an opening over the portion between the gate electrode formation scheduled region 51 and the drain electrode 40 is formed by the use of the photolithography technique.
- an SiN film is formed as the insulating film 160 , then the insulating film 160 exposed in the opening of the resist film is removed by dry etching using fluorine-based gas.
- the insulating film 160 exposed in the opening of the resist film is removed by wet etching using tetra-methyl-ammonium hydroxide (TMAH). After the insulating film 160 is partially removed, the surface 20 a of the semiconductor layer 20 (inside of the concave portion 20 b ) is exposed between the gate electrode formation scheduled region 51 and the drain electrode 40 .
- TMAH tetra-methyl-ammonium hydroxide
- a diamond layer 170 is formed over a surface 160 a of the insulating film 160 opposite to the surface 20 a of the semiconductor layer 20 and over the surface 20 a of the semiconductor layer 20 (concave portion 20 b ) exposed by partially removing the insulating film 160 .
- first powdered diamond seed diamond
- the diamond layer 170 having a polycrystalline structure and a thickness of 10 to 1000 nm is formed by a thermal CVD method. In this case, CH 4 and H 2 are used as material gas and film formation temperature is 700 to 900° C. For example, the diamond layer 170 having a thickness of 50 nm is formed.
- the diamond layer 170 over the gate electrode formation scheduled region 51 is partially removed.
- a resist film having an opening over the gate electrode formation scheduled region 51 is formed by the use of the photolithography technique.
- the diamond layer 170 exposed in the opening of the resist film is removed by dry etching using oxygen gas.
- the insulating film 160 is exposed over the gate electrode formation scheduled region 51 .
- a region between the gate electrode formation scheduled region 51 and the source electrode 30 , of the surface 20 a of the semiconductor layer 20 is also referred to as a source electrode 30 side region.
- a region between the gate electrode formation scheduled region 51 and the drain electrode 40 , of the surface 20 a of the semiconductor layer 20 is also referred to as a drain electrode 40 side region.
- the gate electrode formation scheduled region 51 is situated between the source electrode 30 side region and the drain electrode 40 side region.
- a portion of the diamond layer 170 which remains over the source electrode 30 side region functions as the above diamond layer 70 and a portion of the diamond layer 170 which remains over the drain electrode 40 side region functions as the above diamond layer 80 .
- the gate electrode 50 is formed over the gate electrode formation scheduled region 51 ( FIG. 16 A ) over which the insulating film 160 is exposed by removing the diamond layer 170 .
- a resist film having an opening over the gate electrode formation scheduled region 51 is formed by the use of the photolithography technique.
- Ni is deposited over the whole surface.
- Au is deposited over Ni.
- the resist film and Ni and Au deposited thereover are removed (lift off method).
- the gate electrode 50 having a laminated structure of Ni and Au is formed over the gate electrode formation scheduled region 51 of the semiconductor layer 20 .
- heat treatment may be performed.
- a semiconductor device 1 J including as basic organization a structure like that of the above semiconductor device 1 E according to the fifth embodiment ( FIG. 9 ) or including as basic organization a structure like that of the above semiconductor device 1 F according to the sixth embodiment ( FIG. 10 ) is fabricated by performing the processes illustrated in FIGS. 13 A through 16 B .
- the above process illustrated in FIG. 13 B is not performed. Furthermore, in the above process illustrated in FIG. 15 A , not only the insulating film 160 over a region of the surface 20 a of the semiconductor layer 20 between the gate electrode formation scheduled region 51 and the drain electrode 40 but also the insulating film 160 over the gate electrode formation scheduled region 51 of the surface 20 a of the semiconductor layer 20 is removed.
- the other processes are performed in accordance with the above example of a fabrication method.
- a concave portion 20 b is formed in a portion of the semiconductor layer 20 between the gate electrode formation scheduled region 51 and the drain electrode formation scheduled region 41 in the above process illustrated in FIG. 13 B .
- the insulating film 160 over the gate electrode formation scheduled region 51 of the surface 20 a of the semiconductor layer 20 is also removed. The other processes are performed in accordance with the above example of a fabrication method.
- the insulating film 160 over the gate electrode formation scheduled region 51 of the surface 20 a of the semiconductor layer 20 is also removed in the above process illustrated in FIG. 15 A .
- the other processes are performed in accordance with the above example of a fabrication method.
- the semiconductor layer 20 including the cap layer 90 formed over the electron supply layer 22 is formed in the above process illustrated in FIG. 13 A .
- the insulating film 160 over the gate electrode formation scheduled region 51 of the surface 20 a of the semiconductor layer 20 is also removed. The other processes are performed in accordance with the above example of a fabrication method.
- a diamond layer 100 is formed so as to cover the semiconductor device 1 J formed.
- the diamond layer 100 is formed by the same way that is used for forming the above diamond layer 170 .
- penetration holes which pierce the diamond layer 100 , the diamond layer 170 , and the insulating film 160 and which reach the source electrode 30 and the drain electrode 40 are made. Furthermore, a via 110 and a via 120 are formed in the penetration holes. Moreover, a wiring 130 and a wiring 140 connected to the via 110 and the via 120 , respectively, are formed over the diamond layer 100 . A via (not illustrated) connected to the gate electrode 50 and a wiring (not illustrated) connected to the via are also formed in the same way.
- FIGS. 13 A through 16 B After the processes illustrated in FIGS. 13 A through 16 B are performed, the processes illustrated in FIGS. 17 A and 17 B are performed. By doing so, a semiconductor device 1 K including as basic organization a structure like that of the above semiconductor device 1 G according to the seventh embodiment ( FIG. 11 ) is fabricated.
- a diamond layer 150 may be formed on a surface 10 b of the substrate 10 of the semiconductor device 1 K opposite to the semiconductor layer 20 in accordance with the example of the above semiconductor device 1 H according to the seventh embodiment ( FIG. 12 ).
- the distance between the gate electrode 50 and the drain electrode 40 may be greater than the distance between the gate electrode 50 and the source electrode 30 . That is to say, what is called an asymmetric structure may be adopted.
- the adoption of an asymmetric structure relaxes an electric field between the gate electrode 50 and the drain electrode 40 or improves a breakdown voltage.
- the semiconductor devices 1 , 1 A, 1 B, 1 C, 1 D, 1 E, 1 F, 1 G, 1 H, 1 J, 1 K, and the like described in the first through eighth embodiments may be applied to various electronic devices.
- cases where the semiconductor devices having the above structures are applied to a semiconductor package, a power factor correction circuit, a power supply device, and an amplifier will now be described further.
- FIG. 18 is a view for describing an example of a semiconductor package according to a ninth embodiment.
- FIG. 18 is a fragmentary schematic plan view of an example of a semiconductor package.
- a semiconductor package 400 illustrated in FIG. 18 is an example of a discrete package.
- the semiconductor package 400 includes the above semiconductor device 1 H according to the seventh embodiment ( FIG. 12 ), a lead frame 410 over which the semiconductor device 1 H is mounted, and resin 420 which seals them.
- the semiconductor device 1 H is mounted over a die pad 410 a of the lead frame 410 by the use of a die attaching agent or the like (not illustrated).
- a pad 50 b connected to the above gate electrode 50 , a pad 30 b connected to the source electrode 30 , and a pad 40 b connected to the drain electrode 40 are formed on the semiconductor device 1 H.
- the pad 50 b , the pad 30 b , and the pad 40 b are connected to a gate lead 411 , a source lead 412 , and a drain lead 413 , respectively of the lead frame 410 by the use of wires 430 made of Al or the like.
- the lead frame 410 , the semiconductor device 1 H mounted over the lead frame 410 , and the wires 430 which connect the lead frame 410 and the semiconductor device 1 H are sealed with the resin 420 so that part of each of the gate lead 411 , the source lead 412 , and the drain lead 413 will be exposed.
- the above semiconductor device 1 H according to the seventh embodiment is used and the semiconductor package 400 is obtained.
- the diamond layer 70 is located between the gate electrode 50 and the source electrode 30 and the diamond layer 80 is located between the gate electrode 50 and the drain electrode 40 so as to be in contact with the semiconductor layer 20 .
- heat generated by the semiconductor layer 20 of the semiconductor device 1 H which operates by applying a comparatively high voltage to the drain electrode 40 is efficiently transferred to the diamond layer 80 and the like. This effectively suppresses an overheat of the semiconductor device 1 H or a failure or degradation of the characteristics of the transistor caused by it.
- a portion of the electron supply layer 22 between the gate electrode 50 and the drain electrode 40 is thinner than another portion of the electron supply layer 22 .
- the semiconductor device 1 H having such good performance is used and a high-performance and high-quality semiconductor package 400 is realized.
- the semiconductor device 1 H is used.
- a high-performance and high-quality semiconductor package is obtained in the same way by the use of the semiconductor device 1 , 1 A, 1 B, 1 C, 1 D, 1 E, 1 F, 1 G, 1 J, 1 K, or the like.
- FIG. 19 is a view for describing an example of a power factor correction circuit according to a tenth embodiment.
- FIG. 19 is an equivalent circuit diagram of an example of a power factor correction circuit.
- a power factor correction (PFC) circuit 500 illustrated in FIG. 19 includes a switching element 510 , a diode 520 , a choke coil 530 , a condenser 540 , a condenser 550 , a diode bridge 560 , and an alternating-current power supply 570 (AC).
- PFC power factor correction
- a drain electrode of the switching element 510 an anode terminal of the diode 520 , and one terminal of the choke coil 530 are connected.
- a source electrode of the switching element 510 , one terminal of the condenser 540 , and one terminal of the condenser 550 are connected.
- the other terminal of the condenser 540 and the other terminal of the choke coil 530 are connected.
- the other terminal of the condenser 550 and a cathode terminal of the diode 520 are connected.
- a gate driver is connected to a gate electrode of the switching element 510 .
- the alternating-current power supply 570 is connected via the diode bridge 560 between both terminals of the condenser 540 and a direct-current power supply (DC) is taken from between both terminals of the condenser 550 .
- DC direct-current power supply
- the above semiconductor device 1 H or the semiconductor device 1 , 1 A, 1 B, 1 C, 1 D, 1 E, 1 F, 1 G, 1 J, 1 K, or the like is used as the switching element 510 included in the PFC circuit 500 having the above structure.
- the semiconductor device 1 H or the like heat generated by the semiconductor layer 20 is efficiently transferred to the diamond layer 80 and the like.
- the effect of suppression of an overheat or the effect of suppression of a failure or degradation of characteristics caused by the overheat is obtained.
- the semiconductor device 1 H or the like having good performance is used and a high-performance and high-quality PFC circuit 500 is realized.
- FIG. 20 is a view for describing an example of a power supply device according to an eleventh embodiment.
- FIG. 20 is an equivalent circuit diagram of an example of a power supply device.
- a power supply device 600 illustrated in FIG. 20 includes a high-voltage primary-side circuit 610 , a low-voltage secondary-side circuit 620 , and a transformer 630 located between the primary-side circuit 610 and the secondary-side circuit 620 .
- the primary-side circuit 610 includes the PFC circuit 500 described in the above tenth embodiment and an inverter circuit, such as a full-bridge inverter circuit 640 connected between both terminal of the condenser 550 of the PFC circuit 500 .
- the full-bridge inverter circuit 640 includes a plurality of switching elements. In this example, the full-bridge inverter circuit 640 includes four switching elements 641 , 642 , 643 , and 644 .
- the secondary-side circuit 620 includes a plurality of switching elements. In this example, the secondary-side circuit 620 includes three switching elements 621 , 622 , and 623 .
- the above semiconductor device 1 H or the semiconductor device 1 , 1 A, 1 B, 1 C, 1 D, 1 E, 1 F, 1 G, 1 J, 1 K, or the like is used as the switching element 510 of the PFC circuit 500 or the switching elements 641 through 644 of the full-bridge inverter circuit 640 included in the primary-side circuit 610 of the power supply device 600 having the above structure.
- ordinary MIS-type FETs made of silicon are used as the switching elements 621 through 623 of the secondary-side circuit 620 of the power supply device 600 .
- heat generated by the semiconductor layer 20 is efficiently transferred to the diamond layer 80 and the like.
- the effect of suppression of an overheat or the effect of suppression of a failure or degradation of characteristics caused by the overheat is obtained.
- the semiconductor device 1 H or the like having good performance is used and a high-performance and high-quality power supply device 600 is realized.
- FIG. 21 is a view for describing an example of an amplifier according to a twelfth embodiment.
- FIG. 21 is an equivalent circuit diagram of an example of an amplifier.
- An amplifier 700 illustrated in FIG. 21 includes a digital predistortion circuit 710 , a mixer 720 , a mixer 730 , and a power amplifier 740 .
- the digital predistortion circuit 710 compensates for nonlinear distortion of an input signal.
- the mixer 720 mixes an input signal SI whose nonlinear distortion has been compensated for with an alternating-current signal.
- the power amplifier 740 amplifies the input signal SI mixed with the alternating-current signal.
- an output signal SO is mixed with an alternating-current signal by the mixer 730 and is transmitted to the digital predistortion circuit 710 , by switching a switch.
- the amplifier 700 is used as a high-frequency amplifier or a high output amplifier.
- the above semiconductor device 1 H or the semiconductor device 1 , 1 A, 1 B, 1 C, 1 D, 1 E, 1 F, 1 G, 1 J, 1 K, or the like is used as the power amplifier 740 of the amplifier 700 having the above structure.
- the semiconductor device 1 H or the like heat generated by the semiconductor layer 20 is efficiently transferred to the diamond layer 80 and the like.
- the effect of suppression of an overheat or the effect of suppression of a failure or degradation of characteristics caused by the overheat is obtained.
- the semiconductor device 1 H or the like having good performance is used and a high-performance and high-quality amplifier 700 is realized.
- Various electronic devices (such as the semiconductor package 400 , the PFC circuit 500 , the power supply device 600 , and the amplifier 700 described in the above ninth through twelfth embodiments respectively) to which the above semiconductor device 1 , 1 A, 1 B, 1 C, 1 D, 1 E, 1 F, 1 G, 1 H, 1 J, 1 K, or the like is applied are mounted in various electronic apparatus such as computers (personal computers, supercomputers, servers, and the like), smartphones, portable telephones, tablet terminals, sensors, cameras, audio equipment, measuring equipment, inspection equipment, and manufacturing equipment.
- computers personal computers, supercomputers, servers, and the like
- smartphones portable telephones, tablet terminals, sensors, cameras, audio equipment, measuring equipment, inspection equipment, and manufacturing equipment.
- a semiconductor device having an excellent heat dissipation property is realized.
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Abstract
A semiconductor device includes a source electrode and a drain electrode located over a surface of a semiconductor layer including an electron transit layer and an electron supply layer. A gate electrode is located between the source electrode and the drain electrode. A first diamond layer is located between the source electrode and the drain electrode over the surface with an insulating film therebetween. A second diamond layer is located directly on the surface between the gate electrode and the drain electrode. Of heat generated by the semiconductor layer of the semiconductor device in operation, heat on the side of the electrode on which a relatively strong electric field is applied is efficiently transferred to the second diamond layer. The semiconductor device achieves an excellent heat dissipation property from the semiconductor layer and effectively suppresses overheating and a failure and degradation of the characteristics due to the overheating.
Description
- This application is a divisional of application Ser. No. 17/096,995, filed Nov. 13, 2020, which is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2020-007804, filed on Jan. 21, 2020, the entire contents of which are incorporated herein by reference.
- The embodiments discussed herein are related to a semiconductor device, a semiconductor device fabrication method, and an electronic device.
- Semiconductor devices including field effect transistors (FETs) in which a source electrode and a drain electrode are located over a semiconductor layer and in which a gate electrode is located between the source electrode and the drain electrode are known. With such semiconductor devices the following technique is known. A protection film, such as silicon nitride (SiN), is located over a semiconductor layer. A diamond layer having high thermal conductivity is located over the protection film between a gate electrode and a source electrode and over the protection film between the gate electrode and a drain electrode.
- See, for example, Japanese Laid-open Patent Publication No. 2019-71339 and Japanese Laid-open Patent Publication No. 2016-167522.
- With a semiconductor device a comparatively strong electric field is applied to a drain electrode at operation time. As a result, much heat is apt to be generated at the drain electrode. In order to improve the heat dissipation property of the drain electrode, the above diamond layer may be located. However, if a protection film having thermal conductivity lower than that of the diamond layer intervenes between a semiconductor layer on the drain electrode side and the diamond layer, then heat transfer from the semiconductor layer to the diamond layer is suppressed. If heat transfer from the semiconductor layer to the diamond layer is suppressed by the protection film, then the semiconductor device overheats and therefore the possibility of a failure or degradation of the characteristics increases.
- According to an aspect, there is provided a semiconductor device including a semiconductor layer, a source electrode and a drain electrode located apart from each other over a first surface of the semiconductor layer, a gate electrode located between the source electrode and the drain electrode, a first insulating film located between the gate electrode and the source electrode over the first surface, a first diamond layer located over a second surface of the first insulating film opposite to the first surface, and a second diamond layer located between the gate electrode and the drain electrode over the first surface so as to be in contact with the first surface.
- The object and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the claims.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not restrictive of the invention.
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FIG. 1 is a view for describing an example of a semiconductor device according to a first embodiment; -
FIG. 2 is a view for describing an example of a semiconductor device according to a second embodiment; -
FIG. 3 is a view for describing heat transfer in a semiconductor device taken as a comparative example; -
FIG. 4 is a view for describing heat transfer in the semiconductor device according to the second embodiment; -
FIGS. 5A and 5B are views for describing an example of a planar layout of an insulating film of the semiconductor device according to the second embodiment; -
FIG. 6 is a view for describing a first example of a semiconductor device according to a third embodiment; -
FIG. 7 is a view for describing a second example of the semiconductor device according to the third embodiment; -
FIG. 8 is a view for describing an example of a semiconductor device according to a fourth embodiment; -
FIG. 9 is a view for describing an example of a semiconductor device according to a fifth embodiment; -
FIG. 10 is a view for describing an example of a semiconductor device according to a sixth embodiment; -
FIG. 11 is a view for describing a first example of a semiconductor device according to a seventh embodiment; -
FIG. 12 is a view for describing a second example of the semiconductor device according to the seventh embodiment; -
FIGS. 13A and 13B are views for describing an example of a method for fabricating a semiconductor device according to an eighth embodiment (part 1); -
FIGS. 14A and 14B are views for describing an example of a method for fabricating a semiconductor device according to an eighth embodiment (part 2); -
FIGS. 15A and 15B are views for describing an example of a method for fabricating a semiconductor device according to an eighth embodiment (part 3); -
FIGS. 16A and 16B are views for describing an example of a method for fabricating a semiconductor device according to an eighth embodiment (part 4); -
FIGS. 17A and 17B are views for describing an example of a method for fabricating a semiconductor device according to an eighth embodiment (part 5); -
FIG. 18 is a view for describing an example of a semiconductor package according to a ninth embodiment; -
FIG. 19 is a view for describing an example of a power factor correction circuit according to a tenth embodiment; -
FIG. 20 is a view for describing an example of a power supply device according to an eleventh embodiment; and -
FIG. 21 is a view for describing an example of an amplifier according to a twelfth embodiment. -
FIG. 1 is a view for describing an example of a semiconductor device according to a first embodiment.FIG. 1 is a fragmentary schematic sectional view of an example of a semiconductor device. - A
semiconductor device 1 illustrated inFIG. 1 is an example of an FET. Thesemiconductor device 1 includes asemiconductor layer 2, asource electrode 3, adrain electrode 4, agate electrode 5, aninsulating film 6, adiamond layer 7, and adiamond layer 8. - For example, one semiconductor layer or a laminated structure of two or more semiconductor layers is used as the
semiconductor layer 2. For example, the one semiconductor layer or each of the two or more semiconductor layers included in thesemiconductor layer 2 is formed by the use of a compound semiconductor. A group III-V compound semiconductor, such as gallium nitride (GaN), indium phosphorus (InP), or gallium arsenide (GaAs), is used as such a compound semiconductor. Furthermore, a group IV compound semiconductor, such as silicon carbide (SiC) or silicon germanium (SiGe), is used as such a compound semiconductor. Moreover, a group IV semiconductor, such as silicon (Si) or germanium (Ge), may be used for forming thesemiconductor layer 2. The one semiconductor layer or at least one of the two or more semiconductor layers included in thesemiconductor layer 2 may be doped with a determined impurity element. - The
source electrode 3 and thedrain electrode 4 are located over onesurface 2 a of thesemiconductor layer 2 apart from each other. Thegate electrode 5 is located between thesource electrode 3 and thedrain electrode 4. Thesource electrode 3, thedrain electrode 4, and thegate electrode 5 are formed by the use of various conductive materials. For example, thesource electrode 3, thedrain electrode 4, and thegate electrode 5 are formed by the use of a metal material. - The insulating
film 6 is located between thegate electrode 5 and thesource electrode 3 over thesurface 2 a of thesemiconductor layer 2. The insulatingfilm 6 is formed by the use of various insulating materials. For example, the insulatingfilm 6 is formed by the use of SiN or aluminum oxide (Al2O3 or AlO). Furthermore, the insulatingfilm 6 may be formed by the use of silicon oxide (SiO2 or SiO), silicon oxynitride (SiON), aluminum nitride (AlN), aluminum oxynitride (AlON), or the like. The insulatingfilm 6 may have a single-layer structure of one kind of insulating material or a laminated structure of the same kind of insulating material or different kinds of insulating materials. The insulatingfilm 6 has a function as a protection film which protects thesurface 2 a of thesemiconductor layer 2. - The
diamond layer 7 is located over a surface 6 a of the insulatingfilm 6 opposite to thesurface 2 a of thesemiconductor layer 2. The thermal conductivity of thediamond layer 7 is higher than that of thesemiconductor layer 2 and the insulatingfilm 6. Thediamond layer 7 is a polycrystalline diamond layer formed by the use of a chemical vapor deposition (CVD) method or the like. A laminated structure of plural kinds of polycrystalline diamond layers including crystal grain groups which differ in grain size distribution may be used as thediamond layer 7. - The
diamond layer 8 is located between thegate electrode 5 and thedrain electrode 4 over thesurface 2 a of thesemiconductor layer 2. Thediamond layer 8 is located in contact with thesurface 2 a of thesemiconductor layer 2 between thegate electrode 5 and thedrain electrode 4. The thermal conductivity of thediamond layer 8 is higher than that of thesemiconductor layer 2. Thediamond layer 8 is a polycrystalline diamond layer formed by the use of the CVD method or the like. A laminated structure of plural kinds of polycrystalline diamond layers including crystal grain groups which differ in grain size distribution may be used as thediamond layer 8. - For example, when the
semiconductor device 1 having the above structure operates, a determined voltage is applied between thegate electrode 5 and thesource electrode 3 with thegate electrode 5 side as a high potential and a determined voltage is applied between thedrain electrode 4 and thesource electrode 3 with thedrain electrode 4 side as a high potential. Thesemiconductor layer 2 generates heat as a result of the operation of thesemiconductor device 1. When a comparatively high voltage is applied to thedrain electrode 4 in thesemiconductor device 1, much heat is generated by thedrain electrode 4 because an electric field applied to thedrain electrode 4 is stronger than an electric field applied to thesource electrode 3. Heat generated at an edge (referred to as a “drain side gate edge”) 5 a of thegate electrode 5 on thedrain electrode 4 side at which electric field concentration occurs is apt to become significant. - As illustrated in
FIG. 1 , with thesemiconductor device 1 thediamond layer 8 having high thermal conductivity is located between thegate electrode 5 and thedrain electrode 4 so as to be in contact with thesurface 2 a of thesemiconductor layer 2. As a result, heat generated by thesemiconductor layer 2 is efficiently transferred to thediamond layer 8. Furthermore, as illustrated inFIG. 1 , with thesemiconductor device 1 the drainside gate edge 5 a at which heat generated is apt to become significant is located so as to be in contact with thediamond layer 8. Accordingly, heat generated at the drainside gate edge 5 a is efficiently transferred from the drainside gate edge 5 a to thediamond layer 8, compared with a case where the drainside gate edge 5 a is not in contact with thediamond layer 8. - As a result, heat generated by the
semiconductor layer 2 as a result of the operation of thesemiconductor device 1 is efficiently transferred to thediamond layer 8 and is efficiently dissipated via thediamond layer 8. This suppresses a rise in the temperature of thesemiconductor layer 2. As a result, an overheat of thesemiconductor device 1 or a failure or degradation of the characteristics of the transistor caused by it is effectively suppressed. - Usually a voltage applied between the
gate electrode 5 and thesource electrode 3 is lower than a voltage applied between thegate electrode 5 and thedrain electrode 4. As a result, heat generated between thegate electrode 5 and thesource electrode 3 is less than heat generated between thegate electrode 5 and thedrain electrode 4 or heat generated at the drainside gate edge 5 a. Accordingly, as illustrated inFIG. 1 , thediamond layer 7 is located between thegate electrode 5 and thesource electrode 3 over thesurface 2 a of thesemiconductor layer 2 with the insulatingfilm 6 therebetween. Thesurface 2 a of thesemiconductor layer 2 is effectively protected by locating the insulatingfilm 6 between thegate electrode 5 and thesource electrode 3. Heat transferred from thesemiconductor layer 2 via the insulatingfilm 6 or heat transferred from thesemiconductor layer 2 via thegate electrode 5 or thesource electrode 3 is efficiently dissipated by thediamond layer 7 located over the insulatingfilm 6. -
FIG. 2 is a view for describing an example of a semiconductor device according to a second embodiment.FIG. 2 is a fragmentary schematic sectional view of an example of a semiconductor device. - A
semiconductor device 1A illustrated inFIG. 2 is an example of a high electron mobility transistor (HEMT). Thesemiconductor device 1A includes asubstrate 10, asemiconductor layer 20, asource electrode 30, adrain electrode 40, agate electrode 50, an insulatingfilm 60, adiamond layer 70, and adiamond layer 80. - For example, an SiC substrate is used as the
substrate 10. An SiC substrate may be a semi-insulating substrate or a conductive substrate. An Si substrate, a sapphire substrate, a GaN substrate, a diamond substrate, or the like may be used as thesubstrate 10 in place of an SiC substrate. - For example, the
semiconductor layer 20 includes anelectron transit layer 21 and anelectron supply layer 22. - As illustrated in
FIG. 2 , theelectron transit layer 21 is located over thesubstrate 10. Theelectron transit layer 21 is formed by the use of a nitride semiconductor such as GaN. Alternatively, theelectron transit layer 21 may be formed by the use of a nitride semiconductor such as indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or indium aluminum gallium nitride (InAlGaN). Theelectron transit layer 21 may have a single-layer structure of one kind of nitride semiconductor or a laminated structure of one kind of nitride semiconductor or two or more kinds of nitride semiconductors. For example, theelectron transit layer 21 is formed by the use of an undoped nitride semiconductor. Theelectron transit layer 21 is formed over thesubstrate 10 by the use of a metal organic chemical vapor deposition (MOCVD) or metal organic vapor phase epitaxy (MOVPE) method or a molecular beam epitaxy (MBE) method. Theelectron transit layer 21 is also referred to as a channel layer. - As illustrated in
FIG. 2 , theelectron supply layer 22 is located over theelectron transit layer 21. Theelectron supply layer 22 is formed by the use of a nitride semiconductor such as AlGaN. Alternatively, theelectron supply layer 22 may be formed by the use of a nitride semiconductor such as indium aluminum nitride (InAlN), InAlGaN, or AlN. Theelectron supply layer 22 may have a single-layer structure of one kind of nitride semiconductor or a laminated structure of one kind of nitride semiconductor or two or more kinds of nitride semiconductors. For example, theelectron supply layer 22 is formed by the use of an n-type nitride semiconductor. Theelectron supply layer 22 is formed over theelectron transit layer 21 by the use of the MOVPE method or the MBE method. Theelectron supply layer 22 is also referred to as a barrier layer. - The
electron transit layer 21 and theelectron supply layer 22 are formed by the use of nitride semiconductors which differ in band gap. A hetero junction structure having band discontinuity is formed by locating over theelectron transit layer 21 theelectron supply layer 22 formed by the use of a nitride semiconductor having a band gap larger than that of a nitride semiconductor used for forming theelectron transit layer 21. A Fermi level is made higher (high energy side) than a conduction band at a junction interface between theelectron transit layer 21 and theelectron supply layer 22. By doing so, a two dimensional electron gas (2DEG) 200 is generated in theelectron transit layer 21 at the junction interface. Theelectron supply layer 22 formed by the use of a nitride semiconductor having a lattice constant larger than that of a nitride semiconductor used for forming theelectron transit layer 21 is located over theelectron transit layer 21. By doing so, piezo polarization occurs in theelectron supply layer 22. The2DEG 200 of high concentration is generated in theelectron transit layer 21 at the junction interface as a result of piezo polarization caused by spontaneous polarization of a nitride semiconductor used for forming theelectron supply layer 22 and its lattice constant. A combination of nitride semiconductors by which this2DEG 200 is generated near the junction interface between theelectron transit layer 21 and theelectron supply layer 22 is used for forming theelectron transit layer 21 and theelectron supply layer 22. - A layer made of AlN or the like may be located as an initial layer (not illustrated) between the
substrate 10 and theelectron transit layer 21. Furthermore, a layer made of AlGaN or the like may be located as a buffer layer (not illustrated) between thesubstrate 10 and theelectron transit layer 21. A layer made of undoped AlGaN (i-type AlGaN) or the like may be located as a spacer layer (not illustrated) between theelectron transit layer 21 and theelectron supply layer 22. Moreover, a layer made of n-type GaN or the like may be located as a cap layer (not illustrated) over theelectron supply layer 22. Thesemiconductor layer 20 may include one or more of an initial layer, a buffer layer, a spacer layer, and a cap layer. - The
source electrode 30 and thedrain electrode 40 are located apart from each other over onesurface 20 a of thesemiconductor layer 20, that is to say, over theelectron supply layer 22 in the example ofFIG. 2 . Each of thesource electrode 30 and thedrain electrode 40 functions as an ohmic electrode. As long as each of thesource electrode 30 and thedrain electrode 40 functions as an ohmic electrode, thesource electrode 30 and thedrain electrode 40 may be connected to theelectron supply layer 22 or may pierce theelectron supply layer 22 and be connected to theelectron transit layer 21. Furthermore, a contact layer made of a nitride semiconductor, such as n-type GaN, may be located under thesource electrode 30 and thedrain electrode 40. Thesource electrode 30 and thedrain electrode 40 are formed by the use of a metal material. For example, a metal electrode having titanium (Ti) and aluminum (Al) located thereon is used as each of thesource electrode 30 and thedrain electrode 40. Thesource electrode 30 and thedrain electrode 40 are formed by the use of an evaporation method or the like. - The
gate electrode 50 is located between thesource electrode 30 and thedrain electrode 40. Thegate electrode 50 is located over the onesurface 20 a of thesemiconductor layer 20, that is to say, over theelectron supply layer 22 in the example ofFIG. 2 . A cap layer made of GaN or the like or an insulating film made of oxide, nitride, oxynitride, or the like may intervene between thegate electrode 50 and theelectron supply layer 22. Thegate electrode 50 functions as a Schottky electrode or a Schottky gate electrode. Thegate electrode 50 is formed by the use of a metal material. For example, a metal electrode having nickel (Ni) and gold (Au) located thereon is used as thegate electrode 50. Thegate electrode 50 is formed by the use of the evaporation method or the like. - The insulating
film 60 is located over the onesurface 20 a of thesemiconductor layer 20, that is to say, over theelectron supply layer 22 in the example ofFIG. 2 between thegate electrode 50 and thesource electrode 30. A cap layer made of GaN or the like may intervene between the insulatingfilm 60 and theelectron supply layer 22. The insulatingfilm 60 has the function of protecting the semiconductor layer 20 (electron supply layer 22 and the cap layer), for example, the function of protecting an area of thesemiconductor layer 20 against an atmosphere in which thediamond layer 70 is formed. The insulatingfilm 60 is formed by the use of SiN or the like. Alternatively, the insulatingfilm 60 is formed by the use of AlN. Furthermore, SiO2 or the like may be laminated over SiN or the like. - The
diamond layer 70 is located over asurface 60 a of the insulatingfilm 60 opposite to thesurface 20 a of thesemiconductor layer 20. The thermal conductivity of thediamond layer 70 is higher than that of thesemiconductor layer 20 and the insulatingfilm 60. Thediamond layer 70 has the function of transferring heat transferred from thesemiconductor layer 20 via the insulatingfilm 60, heat transferred from thesemiconductor layer 20 via thegate electrode 50 and thesource electrode 30, and the like and dissipating them to the outside of thediamond layer 70. Thediamond layer 70 is a polycrystalline diamond layer formed by the CVD method. In this case, for example, methane (CH4) and hydrogen (H2) are used as material gas and film formation temperature is 700 to 900° C. A laminated structure of plural kinds of polycrystalline diamond layers including crystal grain groups which differ in grain size distribution may be used as thediamond layer 70. - The
diamond layer 80 is located over thesurface 20 a of thesemiconductor layer 20, that is to say, over theelectron supply layer 22 in the example ofFIG. 2 between thegate electrode 50 and thedrain electrode 40. Thediamond layer 80 is located so as to be in contact with thesurface 20 a of thesemiconductor layer 20. That is to say, thediamond layer 80 is located directly on thesurface 20 a of thesemiconductor layer 20. The thermal conductivity of thediamond layer 80 is higher than that of thesemiconductor layer 20. Thediamond layer 80 has the function of transferring heat transferred from thesemiconductor layer 20, heat transferred from thesemiconductor layer 20 via thegate electrode 50 and thedrain electrode 40, and the like and dissipating them to the outside of thediamond layer 80. Thediamond layer 80 is a polycrystalline diamond layer formed by the CVD method. In this case, for example, CH4 and H2 are used as material gas and film formation temperature is 700 to 900° C. A laminated structure of plural kinds of polycrystalline diamond layers including crystal grain groups which differ in grain size distribution may be used as thediamond layer 80. - For example, when the
semiconductor device 1A having the above structure operates, a determined voltage is applied between thegate electrode 50 and thesource electrode 30 with thegate electrode 50 side as a high potential and a determined voltage is applied between thedrain electrode 40 and thesource electrode 30 with thedrain electrode 40 side as a high potential. It is assumed that thesemiconductor device 1A is used as a semiconductor device capable of a high output and high-voltage operation. Accordingly, a comparatively high voltage is applied to thedrain electrode 40. For example, a high voltage of 30 to 50 volts is applied to thedrain electrode 40. Thesemiconductor layer 20 generates heat as a result of the operation of thesemiconductor device 1A. When a comparatively high voltage is applied to thedrain electrode 40 in thesemiconductor device 1A, much heat is generated by thedrain electrode 40 because an electric field applied to thedrain electrode 40 is stronger than an electric field applied to thesource electrode 30. Heat generated at an edge (referred to as a “drain side gate edge”) 50 a of thegate electrode 50 on thedrain electrode 40 side at which electric field concentration occurs is apt to become significant. - As illustrated in
FIG. 2 , with thesemiconductor device 1A thediamond layer 80 having high thermal conductivity is located between thegate electrode 50 and thedrain electrode 40 so as to be in contact with thesurface 20 a of thesemiconductor layer 20. As a result, with thesemiconductor device 1A heat generated on thedrain electrode 40 side of thegate electrode 50 including the drainside gate edge 50 a is efficiently transferred to thediamond layer 80 and is dissipated. This will be described by reference toFIGS. 3 and 4 . -
FIG. 3 is a view for describing heat transfer in a semiconductor device taken as a comparative example.FIG. 4 is a view for describing heat transfer in the semiconductor device according to the second embodiment. Each ofFIGS. 3 and 4 is a fragmentary schematic sectional view of an example of a semiconductor device. - A
semiconductor device 1000 illustrated inFIG. 3 has a structure in which adiamond layer 80 is located between agate electrode 50 and adrain electrode 40 over asurface 20 a of asemiconductor layer 20 with an insulatingfilm 1010 therebetween. Thesemiconductor device 1000 differs from theabove semiconductor device 1A (FIG. 2 andFIG. 4 ) in this respect. The same kind of insulating material that is used for forming an insulatingfilm 60 is used for forming the insulatingfilm 1010. For example, SiN is used. - When the
semiconductor device 1000 operates, a comparatively high voltage is applied to thedrain electrode 40. Thesemiconductor layer 20 generates heat as a result of the operation of thesemiconductor device 1000.Partial heat 310, ofheat 300 generated by thesemiconductor layer 20, is transferred via the insulatingfilm 60 between thegate electrode 50 and asource electrode 30 to adiamond layer 70 located thereover. Anotherpartial heat 320, of theheat 300 generated by thesemiconductor layer 20, is transferred via the insulatingfilm 1010 between thegate electrode 50 and thedrain electrode 40 to thediamond layer 80 located thereover. Thediamond layer 70 transfers and dissipates the heat to the outside. Thediamond layer 80 transfers and dissipates the heat to the outside. As a result, heat generated by thesemiconductor layer 20 is dissipated or thesemiconductor layer 20 is cooled. - However, with the
semiconductor device 1000 thediamond layer 80 is located over thesurface 20 a of thesemiconductor layer 20 with the insulatingfilm 1010 having comparatively low thermal conductivity therebetween on thedrain electrode 40 side of thegate electrode 50 where comparatively much heat is generated. Accordingly, heat transfer from thesemiconductor layer 20 to thediamond layer 80 is suppressed by the insulatingfilm 1010 and it may be that heat generated by thesemiconductor layer 20 is not sufficiently dissipated. Furthermore, with thesemiconductor device 1000, as indicated in a dashedcircle 340 ofFIG. 3 , a drainside gate edge 50 a which is apt to generate significantly much heat is in contact not with thediamond layer 80 but with the insulatingfilm 1010. As a result, heat transfer from the drainside gate edge 50 a to thediamond layer 80 is suppressed by the insulatingfilm 1010 and it may be that heat generated by thesemiconductor layer 20 is not sufficiently dissipated. If heat generated by thesemiconductor layer 20 is not sufficiently dissipated, then the temperature of thesemiconductor layer 20 rises and thesemiconductor device 1000 overheats. This increases the possibility of a failure or degradation of the characteristics of the transistor. - On the other hand, with the
semiconductor device 1A according to the second embodiment, as illustrated inFIG. 4 , thediamond layer 80 is located directly on thesurface 20 a of thesemiconductor layer 20 between thegate electrode 50 and thedrain electrode 40. - When the
semiconductor device 1A operates, a comparatively high voltage is applied to thedrain electrode 40 and thesemiconductor layer 20 generates heat as a result of the operation of thesemiconductor device 1A.Partial heat 310, ofheat 300 generated by thesemiconductor layer 20, is transferred via the insulatingfilm 60 between thegate electrode 50 and thesource electrode 30 to thediamond layer 70 located thereover. Anotherpartial heat 330, of theheat 300 generated by thesemiconductor layer 20, is transferred directly to thediamond layer 80 between thegate electrode 50 and thedrain electrode 40. Thediamond layer 70 transfers the heat transferred to thediamond layer 70 and dissipates it to the outside. Thediamond layer 80 transfers the heat transferred to thediamond layer 80 and dissipates it to the outside. As a result, heat generated by thesemiconductor layer 20 is dissipated or thesemiconductor layer 20 is cooled. - With the
semiconductor device 1A thediamond layer 80 is located directly on thesurface 20 a of thesemiconductor layer 20 on thedrain electrode 40 side of thegate electrode 50 where comparatively much heat is generated. Accordingly, with thesemiconductor device 1A heat generated by thesemiconductor layer 20 is efficiently transferred from thesemiconductor layer 20 to thediamond layer 80. Furthermore, with thesemiconductor device 1A, as indicated in a dashedcircle 341 ofFIG. 4 , the drainside gate edge 50 a which is apt to generate significantly much heat is in contact not with the above insulatingfilm 1010 but with thediamond layer 80. As a result, heat generated by the drainside gate edge 50 a is efficiently transferred from the drainside gate edge 50 a to thediamond layer 80. - With the
semiconductor device 1A heat generated by thesemiconductor layer 20 as a result of its operation is efficiently transferred to thediamond layer 80 and is efficiently dissipated via thediamond layer 80. This suppresses a rise in the temperature of thesemiconductor layer 20. As a result, an overheat of thesemiconductor device 1A or a failure or degradation of the characteristics of the transistor caused by it is effectively suppressed. - The heat generated by the
semiconductor layer 20 may be transferred not only to thediamond layer 70 and thediamond layer 80 but also to other components such as thegate electrode 50, thesource electrode 30, thedrain electrode 40, and thesubstrate 10. Furthermore, heat transferred to the other components may be dissipated from the other components or may be transferred further from the other components to still other components and be dissipated. - Usually a voltage applied between the
gate electrode 50 and thesource electrode 30 is lower than a voltage applied between thegate electrode 50 and thedrain electrode 40. As a result, heat generated between thegate electrode 50 and thesource electrode 30 is less than heat generated between thegate electrode 50 and thedrain electrode 40 or heat generated at the drainside gate edge 50 a. Accordingly, as illustrated inFIG. 2 andFIG. 4 , thediamond layer 70 is located between thegate electrode 50 and thesource electrode 30 over thesurface 20 a of thesemiconductor layer 20 with the insulatingfilm 60 therebetween. Thesurface 20 a of thesemiconductor layer 20 is effectively protected by locating the insulatingfilm 60 between thegate electrode 50 and thesource electrode 30. Heat transferred from thesemiconductor layer 20 via the insulatingfilm 60 or heat transferred from thesemiconductor layer 20 via thegate electrode 50 or thesource electrode 30 is efficiently dissipated by thediamond layer 70 located over the insulatingfilm 60. -
FIGS. 5A and 5B are views for describing an example of a planar layout of the insulating film of the semiconductor device according to the second embodiment. Each ofFIGS. 5A and 5B is a fragmentary schematic plan view of an example of a semiconductor device.FIG. 2 is a sectional view corresponding to the position of the line IIa-IIa ofFIG. 5A or the line IIb-IIb ofFIG. 5B . For convenience, theabove diamond layer 70 or theabove diamond layer 80 is not illustrated inFIGS. 5A and 5B . - With the
semiconductor device 1A, as illustrated in, for example,FIG. 5A , the insulatingfilm 60 which covers the whole of thesurface 20 a of thesemiconductor layer 20 between thegate electrode 50 and thesource electrode 30 is located. Such an insulatingfilm 60 is not located over thesurface 20 a of thesemiconductor layer 20 between thegate electrode 50 and thedrain electrode 40. - Furthermore, with the
semiconductor device 1A, as illustrated in, for example,FIG. 5B , the insulatingfilm 60 is located between thegate electrode 50 and thesource electrode 30 and an insulatingfilm 60B which partially covers thesurface 20 a of thesemiconductor layer 20 may be located between thegate electrode 50 and thedrain electrode 40. For example, an insulatingfilm 60B having one or more openings 60Ba leading to thesurface 20 a between thegate electrode 50 and thedrain electrode 40 is located. In this example, an insulatingfilm 60B having three openings 60Ba is located. The insulatingfilm 60B is formed by the use of an insulating material such as SiN. This is the same with the insulatingfilm 60. - As illustrated in
FIG. 5B , thesurface 20 a of thesemiconductor layer 20 is also partially covered with the insulatingfilm 60B between thegate electrode 50 and thedrain electrode 40. By doing so, thesemiconductor layer 20 is protected. The diamond layer 80 (FIG. 2 ) is located directly on an area not covered with the insulatingfilm 60B, of thesurface 20 a of thesemiconductor layer 20 between thegate electrode 50 and thedrain electrode 40, that is to say, on an area corresponding to the openings 60Ba. As a result, efficient heat transfer is performed from thesemiconductor layer 20 to thediamond layer 80. - As long as at least part of the
diamond layer 80 located over thesurface 20 a is in contact with thesurface 20 a via the openings 60Ba, the shape of the insulatingfilm 60B (or the openings 60Ba) located between thegate electrode 50 and thedrain electrode 40 is not limited to that illustrated inFIG. 5B . -
FIG. 6 is a view for describing a first example of a semiconductor device according to a third embodiment.FIG. 6 is a fragmentary schematic sectional view of an example of a semiconductor device. - With a
semiconductor device 1B illustrated inFIG. 6 , asurface 20 a of asemiconductor layer 20 includes aconcave portion 20 b formed in an area of anelectron supply layer 22 between agate electrode 50 and adrain electrode 40 and adiamond layer 80 is located in theconcave portion 20 b. Thesemiconductor device 1B differs from thesemiconductor device 1A according to the above second embodiment in this respect. Thesurface 20 a of thesemiconductor layer 20 includes the inside of theconcave portion 20 b formed in theelectron supply layer 22. - With the
semiconductor device 1B thediamond layer 80 is located in theconcave portion 20 b formed in theelectron supply layer 22 so as to be in contact with the inside of theconcave portion 20 b. As a result, heat generated by thesemiconductor layer 20 is efficiently transferred from thesemiconductor layer 20 to thediamond layer 80. This is the same with theabove semiconductor device 1A. - With the
semiconductor device 1B in which thediamond layer 80 is located in theconcave portion 20 b, thediamond layer 80 is in contact with the inside of theconcave portion 20 b. This increases contact area between thediamond layer 80 and thesemiconductor layer 20. As a result, heat is transferred more efficiently from thesemiconductor layer 20 to thediamond layer 80. Furthermore, with thesemiconductor device 1B a drainside gate edge 50 a of thegate electrode 50 is in contact with a side of thediamond layer 80. As a result, contact between the drainside gate edge 50 a and thediamond layer 80 is easily realized and efficient heat transfer from the drainside gate edge 50 a to thediamond layer 80 is easily realized. - According to the
semiconductor device 1B, an overheat of thesemiconductor device 1B or a failure or degradation of the characteristics of the transistor caused by it is effectively suppressed. - In addition, with the
semiconductor device 1B theconcave portion 20 b is formed in theelectron supply layer 22. As a result, aportion 22 a of theelectron supply layer 22 between thegate electrode 50 and thedrain electrode 40 is thinner than another portion of theelectron supply layer 22. As illustrated inFIG. 6 , for example, a thickness T1 of theportion 22 a of theelectron supply layer 22 between thegate electrode 50 and thedrain electrode 40 is smaller than a thickness T2 of aportion 22 b of theelectron supply layer 22 between thegate electrode 50 and thesource electrode 30. As a result, polarization in theportion 22 a of theelectron supply layer 22 on thedrain electrode 40 side is weaker than polarization in another portion, such as theportion 22 b on thesource electrode 30 side, of theelectron supply layer 22. - The
concave portion 20 b is formed in theelectron supply layer 22, theportion 22 a of theelectron supply layer 22 on thedrain electrode 40 side is made thin, and polarization in theportion 22 a is weakened. By doing so, the concentration of a2DEG 200 generated in anelectron transit layer 21 bonded to theportion 22 a is lowered. That is to say, with thesemiconductor device 1B the concentration of the2DEG 200 generated on thedrain electrode 40 side is lower than that of the2DEG 200 generated on thesource electrode 30 side. In other words, a carrier modulation effect is obtained. Thesemiconductor device 1B having a high breakdown voltage is realized by lowering in this way the concentration of the2DEG 200 on thedrain electrode 40 side. - For example, the depth of the
concave portion 20 b formed in theelectron supply layer 22 is set to a value smaller than or equal to half of the thickness of theelectron supply layer 22. If the depth of theconcave portion 20 b is set to a value greater than half of the thickness of theelectron supply layer 22, then polarization is excessively weakened and it may be that the2DEG 200 which functions as a carrier is not obtained. The depth of theconcave portion 20 b is set within half of the thickness of theelectron supply layer 22 on the basis of the degree of a target low concentration of the2DEG 200 and the like. - Furthermore,
FIG. 7 is a view for describing a second example of the semiconductor device according to the third embodiment.FIG. 7 is a fragmentary schematic sectional view of an example of a semiconductor device. - With a semiconductor device 1C illustrated in
FIG. 7 , adiamond layer 80 and adrain electrode 40 are located in aconcave portion 20 b formed in anelectron supply layer 22. The semiconductor device 1C differs from theabove semiconductor device 1B illustrated inFIG. 6 in this respect. - As with the semiconductor device 1C, the
concave portion 20 b may be formed in an area of theelectron supply layer 22 between agate electrode 50 and thedrain electrode 40 and in an area of theelectron supply layer 22 corresponding to thedrain electrode 40. With the semiconductor device 1C the same effect that is obtained by theabove semiconductor device 1B is achieved. - Furthermore, with the semiconductor device 1C the
diamond layer 80 and thedrain electrode 40 are located in theconcave portion 20 b. As a result, a side of thediamond layer 80 on thedrain electrode 40 side is wholly in contact with thedrain electrode 40. That is to say, with the semiconductor device 1C not only contact area between thediamond layer 80 and asemiconductor layer 20 but also contact area between thediamond layer 80 and thedrain electrode 40 increases. As a result, with the semiconductor device 1C efficient heat transfer between thediamond layer 80 and thesemiconductor layer 20 and efficient heat transfer between thediamond layer 80 and thedrain electrode 40 are realized. -
FIG. 8 is a view for describing an example of a semiconductor device according to a fourth embodiment.FIG. 8 is a fragmentary schematic sectional view of an example of a semiconductor device. - With a
semiconductor device 1D illustrated inFIG. 8 , acap layer 90 is located over anelectron supply layer 22 of asemiconductor layer 20. Thesemiconductor device 1D differs from the above semiconductor device 1C according to the third embodiment (FIG. 7 ) in this respect. - The
cap layer 90 is formed by the use of a nitride semiconductor such as n-type GaN. Thecap layer 90 has the function of protecting theelectron supply layer 22. If thecap layer 90 is located over theelectron supply layer 22 as with thesemiconductor device 1D, then the depth of aconcave portion 20 b to be formed is set so as to pierce thecap layer 90 and reach the inside of theelectron supply layer 22. By doing so, a portion of theelectron supply layer 22 on thedrain electrode 40 side is made thinner than another portion of theelectron supply layer 22, the concentration of a2DEG 200 generated on thedrain electrode 40 side of anelectron transit layer 21 is lowered, and thesemiconductor device 1D having a high breakdown voltage is realized. - A semiconductor device obtained by locating the
cap layer 90 in thesemiconductor layer 20 of the above semiconductor device 1C according to the third embodiment (FIG. 7 ) is taken as thesemiconductor device 1D. However, thecap layer 90 may be located in the same way in thesemiconductor layer 20 of theabove semiconductor device 1A according to the second embodiment (FIG. 2 ) or in thesemiconductor layer 20 of theabove semiconductor device 1B according to the third embodiment (FIG. 6 ). - A p-type GaN layer or an InGaN layer may be located as a cap layer used in a HEMT so as to be specifically situated just under a
gate electrode 50. If a p-type GaN layer is located just under thegate electrode 50, then a conduction band at the junction interface between theelectron transit layer 21 and theelectron supply layer 22 under thegate electrode 50 is pushed up by a fixed charge of the p-type GaN layer and the generation of the2DEG 200 is suppressed. If an InGaN layer is located just under thegate electrode 50, then a conduction band at the junction interface between theelectron transit layer 21 and theelectron supply layer 22 under thegate electrode 50 is pushed up by piezo polarization generated in the InGaN layer and the generation of the2DEG 200 is suppressed. By locating a p-type GaN layer or an InGaN layer just under thegate electrode 50, a current flowing between asource electrode 30 and thedrain electrode 40 is shut off when a gate voltage is off. That is to say, what is call a normally-off HEMT is realized. -
FIG. 9 is a view for describing an example of a semiconductor device according to a fifth embodiment.FIG. 9 is a fragmentary schematic sectional view of an example of a semiconductor device. - With a
semiconductor device 1E illustrated inFIG. 9 , an insulatingfilm 60 formed over asurface 20 a of asemiconductor layer 20 lies between agate electrode 50 and asource electrode 30 and just under thegate electrode 50. Thesemiconductor device 1E differs from the above semiconductor device 1C according to the third embodiment (FIG. 7 ) in this respect. - With the
semiconductor device 1E part of the insulatingfilm 60 intervenes as agate insulating film 61 between thegate electrode 50 and thesurface 20 a of thesemiconductor layer 20. That is to say, thesemiconductor device 1E is an example of a metal insulator semiconductor (MIS)-type HEMT. With thesemiconductor device 1E thegate insulating film 61 intervenes between thegate electrode 50 and thesemiconductor layer 20. As a result, the generation of a leakage current between thegate electrode 50 and thesemiconductor layer 20 is suppressed compared with a case where a Schottky connection of thegate electrode 50 with thesemiconductor layer 20 is formed. Furthermore, with thesemiconductor device 1E thegate insulating film 61 intervenes between thegate electrode 50 and thesemiconductor layer 20. This prevents metal components contained in thegate electrode 50 from diffusing by heating into thesemiconductor layer 20. As a result, the heat resistance of thegate electrode 50 is improved and a drop in gate forward rising voltage caused by the diffusion of the metal components into thesemiconductor layer 20 is suppressed. - In this example, the insulating
film 60 located as a foundation of adiamond layer 70 between thegate electrode 50 and thesource electrode 30 is extended so as to lie just under thegate electrode 50, and part of the extended insulatingfilm 60 is used as thegate insulating film 61. That is to say, with thesemiconductor device 1E afoundation insulating film 62 located just under thediamond layer 70 between thegate electrode 50 and thesource electrode 30 and thegate insulating film 61 located just under thegate electrode 50 are integrally formed as the insulatingfilm 60. - Furthermore, the
foundation insulating film 62 located just under thediamond layer 70 between thegate electrode 50 and thesource electrode 30 and thegate insulating film 61 located just under thegate electrode 50 may separately be formed. In this case, thefoundation insulating film 62 and thegate insulating film 61 may be formed by the use of the same kind of insulating material or different kinds of insulating materials. In addition, each of thefoundation insulating film 62 and thegate insulating film 61 may have a single-layer structure of one kind of insulating material or a laminated structure of the same kind of insulating material or different kinds of insulating materials. - In this example, a semiconductor device obtained by forming the
foundation insulating film 62 and thegate insulating film 61 in the above semiconductor device 1C according to the third embodiment (FIG. 7 ) is taken as thesemiconductor device 1E. However, thefoundation insulating film 62 and thegate insulating film 61 may be formed in the same way in theabove semiconductor device 1A according to the second embodiment (FIG. 2 ), theabove semiconductor device 1B according to the third embodiment (FIG. 6 ), or theabove semiconductor device 1D according to the fourth embodiment (FIG. 8 ). -
FIG. 10 is a view for describing an example of a semiconductor device according to a sixth embodiment.FIG. 10 is a fragmentary schematic sectional view of an example of a semiconductor device. - With a
semiconductor device 1F illustrated inFIG. 10 , an insulatingfilm 60A is formed by the use of an insulating material which differs from an insulating material used for forming the above insulating film 60 (foundation insulating film 62 and the gate insulating film 61) in band gap. Thesemiconductor device 1F differs from theabove semiconductor device 1E according to the fifth embodiment (FIG. 9 ) in this respect. - The insulating
film 60A includes afoundation insulating film 62A located just under adiamond layer 70 between agate electrode 50 and asource electrode 30 and agate insulating film 61A located just under thegate electrode 50. An insulating material, such as Al2O3, is used for forming the insulatingfilm 60A. Alternatively, an insulating material, such as SiO2, SiON, or AlON, may be used for forming the insulatingfilm 60A. - The same effect that is obtained by the
above semiconductor device 1E is achieved by thesemiconductor device 1F in which the insulatingfilm 60A is formed. That is to say, for example, the generation of a leakage current between thegate electrode 50 and asemiconductor layer 20 is suppressed, the heat resistance of thegate electrode 50 is improved, and a drop in gate forward rising voltage is suppressed. - With the
semiconductor device 1F the band gap of an insulating material, such as Al2O3, used for forming the insulatingfilm 60A is wider than that of SiN taken as an insulating material used for forming the above insulatingfilm 60. Furthermore, the difference in band gap between an insulating material, such as Al2O3, used for forming the insulatingfilm 60A and anelectron supply layer 22 of thesemiconductor layer 20 formed by the use of n-type AlGaN or the like becomes larger. Thegate insulating film 61A having a high barrier property intervenes between thegate electrode 50 and thesemiconductor layer 20 by using an insulating material, such as Al2O3, for forming the insulatingfilm 60A. As a result, a voltage applied to thegate electrode 50 is increased and a highoutput semiconductor device 1F is realized. - In this example, the
foundation insulating film 62A and thegate insulating film 61A are integrally formed as the insulatingfilm 60A. However, thefoundation insulating film 62A and thegate insulating film 61A may separately be formed. In this case, as long as an insulating material, such as Al2O3, having a comparatively wide band gap is used for forming thegate insulating film 61A, the same kind of insulating material or different kinds of insulating materials may be used for forming thefoundation insulating film 62A and thegate insulating film 61A. Furthermore, as long as an insulating material, such as Al2O3, having a comparatively wide band gap is used for forming thegate insulating film 61A, each of thefoundation insulating film 62A and thegate insulating film 61A may have a single-layer structure of one kind of insulating material or a laminated structure of the same kind of insulating material or different kinds of insulating materials. - An insulating material, such as Al2O3, in the sixth embodiment may be used for forming the insulating
film 60 of theabove semiconductor device 1A according to the second embodiment (FIG. 2 ), theabove semiconductor device 1B according to the third embodiment (FIG. 6 ), the above semiconductor device 1C according to the third embodiment (FIG. 7 ), or theabove semiconductor device 1D according to the fourth embodiment (FIG. 8 ). -
FIG. 11 is a view for describing a first example of a semiconductor device according to a seventh embodiment.FIG. 11 is a fragmentary schematic sectional view of an example of a semiconductor device. - A
semiconductor device 1G illustrated inFIG. 11 includes adiamond layer 100 located so as to cover agate electrode 50, adiamond layer 70, adiamond layer 80, asource electrode 30, and adrain electrode 40. Furthermore, thesemiconductor device 1G includesvias diamond layer 100 and reach thesource electrode 30 and thedrain electrode 40 respectively, and awiring 130 and awiring 140 formed over thediamond layer 100 so as to be connected to thevias semiconductor device 1G also includes a via (not illustrated) formed so as to pierce thediamond layer 100 and reach thegate electrode 50, and a wiring (not illustrated) formed over thediamond layer 100 so as to be connected to the via. The via 110, the via 120, and the like and thewiring 130, thewiring 140, and the like are formed by the use of various conductive materials such as copper (Cu) or Al. - The
semiconductor device 1G differs from theabove semiconductor device 1E according to the fifth embodiment (FIG. 9 ) in that it has the above structure. - When the
semiconductor device 1G operates, a determined voltage is applied between the wiring connected via the via to thegate electrode 50 and thewiring 130 connected via the via 110 to thesource electrode 30 with thegate electrode 50 side as a high potential. Furthermore, a determined voltage is applied between thewiring 130 connected via the via 110 to thesource electrode 30 and thewiring 140 connected via the via 120 to thedrain electrode 40 with thedrain electrode 40 side as a high potential. - A
semiconductor layer 20 generates heat as a result of the operation of thesemiconductor device 1G. On thesource electrode 30 side where an electric field generated by applying the voltage is comparatively weak and comparatively little heat is generated, heat generated by thesemiconductor layer 20 is transferred via an insulatingfilm 60 to thediamond layer 70. On thedrain electrode 40 where an electric field generated by applying the voltage is comparatively strong and comparatively much heat is generated, heat generated by thesemiconductor layer 20 is transferred directly to thediamond layer 80. Heat generated at a drainside gate edge 50 a of thegate electrode 50 at which electric field concentration occurs is transferred from the drainside gate edge 50 a to thediamond layer 80. The heat transferred to thediamond layer 70 and thediamond layer 80 is transferred further to thediamond layer 100 and is dissipated via thediamond layer 100. - As stated above, with the
semiconductor device 1G the heat generated by thesemiconductor layer 20 is transferred to thediamond layer 70 and thediamond layer 80 and is efficiently transferred further to thediamond layer 100. This suppresses a rise in the temperature of thesemiconductor layer 20. As a result, an overheat of thesemiconductor device 1G or a failure or degradation of the characteristics of the transistor caused by it is effectively suppressed. - The heat generated by the
semiconductor layer 20 may be transferred not only to thediamond layer 70, thediamond layer 80, and thediamond layer 100 but also to other components such as thegate electrode 50, thesource electrode 30, thedrain electrode 40, and asubstrate 10. Furthermore, heat transferred to the other components may be dissipated from the other components or may be transferred further from the other components to still other components and be dissipated. - Furthermore, the
diamond layer 100, the via 110, the via 120, thewiring 130, thewiring 140, and the like in the seventh embodiment may be formed in the same way in theabove semiconductor device 1A according to the second embodiment (FIG. 2 ), theabove semiconductor device 1B according to the third embodiment (FIG. 6 ), the above semiconductor device 1C according to the third embodiment (FIG. 7 ), theabove semiconductor device 1D according to the fourth embodiment (FIG. 8 ), or theabove semiconductor device 1F according to the sixth embodiment (FIG. 10 ). -
FIG. 12 is a view for describing a second example of the semiconductor device according to the seventh embodiment.FIG. 12 is a fragmentary schematic sectional view of an example of a semiconductor device. - With a
semiconductor device 1H illustrated inFIG. 12 , adiamond layer 150 is formed on asurface 10 b opposite to asurface 20 a of asemiconductor layer 20. To be more concrete, adiamond layer 150 is formed on asurface 10 b of asubstrate 10 opposite to asemiconductor layer 20. Thesemiconductor device 1H differs from thesemiconductor device 1G described in the above first example (FIG. 11 ) in this respect. - With the
semiconductor device 1H thediamond layer 150 is formed on thesurface 10 b of thesubstrate 10. Accordingly, heat generated by thesemiconductor layer 20 as a result of the operation of thesemiconductor device 1H and transferred to thesubstrate 10 is further transferred efficiently to thediamond layer 150 and is dissipated. This effectively suppresses a rise in the temperature of thesemiconductor layer 20. As a result, an overheat of thesemiconductor device 1H or a failure or degradation of the characteristics of the transistor caused by it is suppressed more effectively. - The
diamond layer 150 in the seventh embodiment may be formed in the same way in theabove semiconductor device 1A according to the second embodiment (FIG. 2 ), theabove semiconductor device 1B according to the third embodiment (FIG. 6 ), the above semiconductor device 1C according to the third embodiment (FIG. 7 ), theabove semiconductor device 1D according to the fourth embodiment (FIG. 8 ), theabove semiconductor device 1E according to the fifth embodiment (FIG. 9 ), or theabove semiconductor device 1F according to the sixth embodiment (FIG. 10 ). - An example of a method for fabricating a semiconductor device will now be described as an eighth embodiment.
-
FIGS. 13A through 17B are views for describing an example of a method for fabricating a semiconductor device according to an eighth embodiment. Each ofFIG. 13A ,FIG. 13B ,FIG. 14A ,FIG. 14B ,FIG. 15A ,FIG. 15B ,FIG. 16A ,FIG. 16B ,FIG. 17A , andFIG. 17B is a fragmentary schematic sectional view of a process for fabricating a semiconductor device. - As illustrated in
FIG. 13A , first asemiconductor layer 20 is formed over asubstrate 10. For example, an SiC substrate is used as thesubstrate 10. Anelectron transit layer 21 and anelectron supply layer 22 of thesemiconductor layer 20 are laminated over thesubstrate 10 by crystal growth by the use of the MOVPE method. For example, undoped GaN (i-type GaN) is crystal-grown as theelectron transit layer 21 and n-type AlxGa1-xN (0<x<1) is crystal-grown as theelectron supply layer 22. For example, i-type GaN having a thickness of about 1 μm is crystal-grown as theelectron transit layer 21 and n-type Al0.2Ga0.8N (Al ingredient x is 0.2) having a thickness of 5 to 20 nm is crystal-grown as theelectron supply layer 22. - Before the
electron transit layer 21 is crystal-grown, AlN or the like may be crystal-grown over thesubstrate 10 as an initial layer or AlGaN or the like may be crystal-grown over thesubstrate 10 as a buffer layer. Furthermore, before theelectron supply layer 22 is crystal-grown, a spacer layer may be formed over theelectron transit layer 21 by the use of i-type AlGaN or the like. Moreover, a cap layer may be formed over theelectron supply layer 22 by the use of n-type GaN or the like. - If each layer is crystal-grown by the use of the MOVPE method, then mixed gas of tri-methyl-gallium (TMGa), which serves as a gallium (Ga) source, and ammonia (NH3) is used for crystal-growing GaN. Mixed gas of tri-methyl-aluminum (TMAl), which serves as an Al source, TMGa, which serves as a Ga source, and NH3 is used for crystal-growing AlGaN. Mixed gas of TMAl, which serves as an Al source, and NH3 is used for crystal-growing AlN. If a nitride semiconductor is doped with Si as n-type impurities, then silane (SiH4) or the like is used as a Si source. The supply and stoppage (switching) of TMAl or TMGa and a flow rate at supply time (ratio of TMAl or TMGa to another material) are properly set according to a nitride semiconductor to be crystal-grown. The flow rate of NH3 which is a common material of GaN and AlGaN (and AlN in the case of AlN being crystal-grown) is about 100 ml/m to 10 L/m. Crystal growth pressure is about 50 to 300 Torr (1 Torr is approximately equal to 133.322 Pa) and crystal growth temperature is about 1000 to 2000° C.
- After each layer is crystal-grown, argon (Ar) ions are implanted from a
surface 20 a of thesemiconductor layer 20 on theelectron supply layer 22 side to perform isolation (not illustrated). - Next, as illustrated in
FIG. 13B , aconcave portion 20 b is formed in a portion of thesemiconductor layer 20 between aregion 51 where agate electrode 50 is to be formed (gate electrode formation scheduled region) and aregion 41 where adrain electrode 40 is to be formed (drain electrode formation scheduled region) and in the drain electrode formation scheduledregion 41 of thesemiconductor layer 20. For example, first a resist film having an opening over the portion between the gate electrode formation scheduledregion 51 and the drain electrode formation scheduledregion 41 and over the drain electrode formation scheduledregion 41 is formed over thesemiconductor layer 20 by the use of a photolithography technique. Furthermore, theconcave portion 20 b having a determined depth is formed in theelectron supply layer 22 of thesemiconductor layer 20 exposed in the opening of the resist film by dry etching using chlorine-based gas. - The
concave portion 20 b is formed in theelectron supply layer 22 of thesemiconductor layer 20. By doing so, thesurface 20 a including the inside of theconcave portion 20 b is formed. Furthermore, because theconcave portion 20 b is formed in theelectron supply layer 22 of thesemiconductor layer 20, theelectron supply layer 22 in the portion between the gate electrode formation scheduledregion 51 and the drain electrode formation scheduledregion 41 and the drain electrode formation scheduledregion 41 becomes thinner than theelectron supply layer 22 in the other region. This lowers the concentration of a2DEG 200 generated in theelectron transit layer 21 in the portion between the gate electrode formation scheduledregion 51 and the drain electrode formation scheduledregion 41 and the drain electrode formation scheduledregion 41. - Next, as illustrated in
FIG. 14A , asource electrode 30 and thedrain electrode 40 are formed over thesurface 20 a of thesemiconductor layer 20. For example, first a resist film having openings over a region where thesource electrode 30 is to be formed (source electrode formation scheduled region) 31 and the drain electrode formation scheduled region 41 (FIG. 13B ) is formed by the use of the photolithography technique. In addition, Ti is deposited over the whole surface. Al is deposited over Ti. The resist film and Ti and Al deposited thereover are removed (lift off method). By doing so, thesource electrode 30 and thedrain electrode 40 each having a laminated structure of Ti and Al are formed over the source electrode formation scheduledregion 31 and the drain electrode formation scheduledregion 41, respectively, of thesemiconductor layer 20. After that, heat treatment is performed in an atmosphere of nitrogen at a temperature of 400 to 1000° C. By doing so, an ohmic connection of thesource electrode 30 and thedrain electrode 40 is established. If an ohmic connection is established by forming electrode metal for thesource electrode 30 and thedrain electrode 40, then heat treatment is not always needed. - Next, as illustrated in
FIG. 14B , an insulatingfilm 160 is formed over thesurface 20 a of thesemiconductor layer 20. The insulatingfilm 160 is the insulating film 60 (SiN, for example) in the above second, third, fourth, fifth, or seventh embodiment or the insulatingfilm 60A (Al2O3, for example) in the above sixth embodiment. If an SiN film is formed as the insulating film 160 (if the above insulatingfilm 60 is formed), then an SiN film having a thickness of about 10 to 100 nm is deposited over thesemiconductor layer 20 by the use of a plasma CVD method. For example, an SiN film having a thickness of 40 nm is deposited. Furthermore, if an Al2O3 film is formed as the insulating film 160 (if the above insulatingfilm 60A is formed), then an Al2O3 film having a thickness of about 1 to 100 nm is deposited over thesemiconductor layer 20 by the use of an atomic layer deposition (ALD) method. For example, an Al2O3 film having a thickness of 10 nm is deposited. As illustrated inFIG. 14B , an SiN film deposited by the use of the plasma CVD method or an Al2O3 film deposited by the use of the ALD method may be deposited not only over thesemiconductor layer 20 but also over thesource electrode 30 and thedrain electrode 40. - Next, as illustrated in
FIG. 15A , the insulatingfilm 160 between the gate electrode formation scheduledregion 51 and thedrain electrode 40 over thesurface 20 a of thesemiconductor layer 20, that is to say, the insulatingfilm 160 in theconcave portion 20 b of thesemiconductor layer 20 is removed. For example, first a resist film having an opening over the portion between the gate electrode formation scheduledregion 51 and thedrain electrode 40 is formed by the use of the photolithography technique. Furthermore, if an SiN film is formed as the insulatingfilm 160, then the insulatingfilm 160 exposed in the opening of the resist film is removed by dry etching using fluorine-based gas. Moreover, if an Al2O3 film is formed as the insulatingfilm 160, then the insulatingfilm 160 exposed in the opening of the resist film is removed by wet etching using tetra-methyl-ammonium hydroxide (TMAH). After the insulatingfilm 160 is partially removed, thesurface 20 a of the semiconductor layer 20 (inside of theconcave portion 20 b) is exposed between the gate electrode formation scheduledregion 51 and thedrain electrode 40. - Next, as illustrated in
FIG. 15B , adiamond layer 170 is formed over asurface 160 a of the insulatingfilm 160 opposite to thesurface 20 a of thesemiconductor layer 20 and over thesurface 20 a of the semiconductor layer 20 (concave portion 20 b) exposed by partially removing the insulatingfilm 160. For example, first powdered diamond (seed diamond) is located over the insulatingfilm 160 and thesurface 20 a of the semiconductor layer 20 (concave portion 20 b). Furthermore, thediamond layer 170 having a polycrystalline structure and a thickness of 10 to 1000 nm is formed by a thermal CVD method. In this case, CH4 and H2 are used as material gas and film formation temperature is 700 to 900° C. For example, thediamond layer 170 having a thickness of 50 nm is formed. - Next, as illustrated in
FIG. 16A , thediamond layer 170 over the gate electrode formation scheduledregion 51 is partially removed. For example, first a resist film having an opening over the gate electrode formation scheduledregion 51 is formed by the use of the photolithography technique. Furthermore, thediamond layer 170 exposed in the opening of the resist film is removed by dry etching using oxygen gas. After thediamond layer 170 is removed, the insulatingfilm 160 is exposed over the gate electrode formation scheduledregion 51. - A region between the gate electrode formation scheduled
region 51 and thesource electrode 30, of thesurface 20 a of thesemiconductor layer 20, is also referred to as asource electrode 30 side region. A region between the gate electrode formation scheduledregion 51 and thedrain electrode 40, of thesurface 20 a of thesemiconductor layer 20, is also referred to as adrain electrode 40 side region. The gate electrode formation scheduledregion 51 is situated between thesource electrode 30 side region and thedrain electrode 40 side region. - After the
diamond layer 170 is removed, a portion of thediamond layer 170 which remains over thesource electrode 30 side region functions as theabove diamond layer 70 and a portion of thediamond layer 170 which remains over thedrain electrode 40 side region functions as theabove diamond layer 80. - Next, as illustrated in
FIG. 16B , thegate electrode 50 is formed over the gate electrode formation scheduled region 51 (FIG. 16A ) over which the insulatingfilm 160 is exposed by removing thediamond layer 170. For example, first a resist film having an opening over the gate electrode formation scheduledregion 51 is formed by the use of the photolithography technique. In addition, Ni is deposited over the whole surface. Au is deposited over Ni. The resist film and Ni and Au deposited thereover are removed (lift off method). By doing so, thegate electrode 50 having a laminated structure of Ni and Au is formed over the gate electrode formation scheduledregion 51 of thesemiconductor layer 20. After electrode metal for thegate electrode 50 is formed, heat treatment may be performed. - A
semiconductor device 1J including as basic organization a structure like that of theabove semiconductor device 1E according to the fifth embodiment (FIG. 9 ) or including as basic organization a structure like that of theabove semiconductor device 1F according to the sixth embodiment (FIG. 10 ) is fabricated by performing the processes illustrated inFIGS. 13A through 16B . - If a semiconductor device including a structure like that of the
above semiconductor device 1A according to the second embodiment (FIG. 2 ) is fabricated, then the above process illustrated inFIG. 13B is not performed. Furthermore, in the above process illustrated inFIG. 15A , not only the insulatingfilm 160 over a region of thesurface 20 a of thesemiconductor layer 20 between the gate electrode formation scheduledregion 51 and thedrain electrode 40 but also the insulatingfilm 160 over the gate electrode formation scheduledregion 51 of thesurface 20 a of thesemiconductor layer 20 is removed. The other processes are performed in accordance with the above example of a fabrication method. - Furthermore, if a semiconductor device including a structure like that of the
above semiconductor device 1B according to the third embodiment (FIG. 6 ) is fabricated, then aconcave portion 20 b is formed in a portion of thesemiconductor layer 20 between the gate electrode formation scheduledregion 51 and the drain electrode formation scheduledregion 41 in the above process illustrated inFIG. 13B . In addition, in the above process illustrated inFIG. 15A , the insulatingfilm 160 over the gate electrode formation scheduledregion 51 of thesurface 20 a of thesemiconductor layer 20 is also removed. The other processes are performed in accordance with the above example of a fabrication method. - Furthermore, if a semiconductor device including a structure like that of the above semiconductor device 1C according to the third embodiment (
FIG. 7 ) is fabricated, then the insulatingfilm 160 over the gate electrode formation scheduledregion 51 of thesurface 20 a of thesemiconductor layer 20 is also removed in the above process illustrated inFIG. 15A . The other processes are performed in accordance with the above example of a fabrication method. - Furthermore, if a semiconductor device including a structure like that of the
above semiconductor device 1D according to the fourth embodiment (FIG. 8 ) is fabricated, then thesemiconductor layer 20 including thecap layer 90 formed over theelectron supply layer 22 is formed in the above process illustrated inFIG. 13A . In the above process illustrated inFIG. 15A , the insulatingfilm 160 over the gate electrode formation scheduledregion 51 of thesurface 20 a of thesemiconductor layer 20 is also removed. The other processes are performed in accordance with the above example of a fabrication method. - For example, after the
above semiconductor device 1J illustrated inFIG. 16B is formed, processes illustrated inFIGS. 17A and 17B are performed further. - As illustrated in
FIG. 17A , first adiamond layer 100 is formed so as to cover thesemiconductor device 1J formed. Thediamond layer 100 is formed by the same way that is used for forming theabove diamond layer 170. - Next, as illustrated in
FIG. 17B , penetration holes which pierce thediamond layer 100, thediamond layer 170, and the insulatingfilm 160 and which reach thesource electrode 30 and thedrain electrode 40 are made. Furthermore, a via 110 and a via 120 are formed in the penetration holes. Moreover, awiring 130 and awiring 140 connected to the via 110 and the via 120, respectively, are formed over thediamond layer 100. A via (not illustrated) connected to thegate electrode 50 and a wiring (not illustrated) connected to the via are also formed in the same way. - After the processes illustrated in
FIGS. 13A through 16B are performed, the processes illustrated inFIGS. 17A and 17B are performed. By doing so, asemiconductor device 1K including as basic organization a structure like that of theabove semiconductor device 1G according to the seventh embodiment (FIG. 11 ) is fabricated. - Furthermore, a
diamond layer 150 may be formed on asurface 10 b of thesubstrate 10 of thesemiconductor device 1K opposite to thesemiconductor layer 20 in accordance with the example of theabove semiconductor device 1H according to the seventh embodiment (FIG. 12 ). - The first through eighth embodiments have been described.
- With the
semiconductor devices gate electrode 50 and thedrain electrode 40 may be greater than the distance between thegate electrode 50 and thesource electrode 30. That is to say, what is called an asymmetric structure may be adopted. The adoption of an asymmetric structure relaxes an electric field between thegate electrode 50 and thedrain electrode 40 or improves a breakdown voltage. - Furthermore, the
semiconductor devices - An example of the application of the semiconductor devices having the above structures to a semiconductor package will now be described as a ninth embodiment.
-
FIG. 18 is a view for describing an example of a semiconductor package according to a ninth embodiment.FIG. 18 is a fragmentary schematic plan view of an example of a semiconductor package. - A
semiconductor package 400 illustrated inFIG. 18 is an example of a discrete package. For example, thesemiconductor package 400 includes theabove semiconductor device 1H according to the seventh embodiment (FIG. 12 ), alead frame 410 over which thesemiconductor device 1H is mounted, andresin 420 which seals them. - The
semiconductor device 1H is mounted over adie pad 410 a of thelead frame 410 by the use of a die attaching agent or the like (not illustrated). Apad 50 b connected to theabove gate electrode 50, apad 30 b connected to thesource electrode 30, and apad 40 b connected to thedrain electrode 40 are formed on thesemiconductor device 1H. Thepad 50 b, thepad 30 b, and thepad 40 b are connected to agate lead 411, asource lead 412, and adrain lead 413, respectively of thelead frame 410 by the use ofwires 430 made of Al or the like. Thelead frame 410, thesemiconductor device 1H mounted over thelead frame 410, and thewires 430 which connect thelead frame 410 and thesemiconductor device 1H are sealed with theresin 420 so that part of each of thegate lead 411, thesource lead 412, and thedrain lead 413 will be exposed. - For example, the
above semiconductor device 1H according to the seventh embodiment is used and thesemiconductor package 400 is obtained. With thesemiconductor device 1H thediamond layer 70 is located between thegate electrode 50 and thesource electrode 30 and thediamond layer 80 is located between thegate electrode 50 and thedrain electrode 40 so as to be in contact with thesemiconductor layer 20. As a result, heat generated by thesemiconductor layer 20 of thesemiconductor device 1H which operates by applying a comparatively high voltage to thedrain electrode 40 is efficiently transferred to thediamond layer 80 and the like. This effectively suppresses an overheat of thesemiconductor device 1H or a failure or degradation of the characteristics of the transistor caused by it. Furthermore, with thesemiconductor device 1H a portion of theelectron supply layer 22 between thegate electrode 50 and thedrain electrode 40 is thinner than another portion of theelectron supply layer 22. This lowers the concentration of the2DEG 200 between thegate electrode 50 and thedrain electrode 40 and a high breakdown voltage is realized. Moreover, with thesemiconductor device 1H part of the insulating film 60 (or the insulatingfilm 60A) intervenes between thegate electrode 50 and thesemiconductor layer 20. For example, this suppresses a leakage current, improves the heat resistance of thegate electrode 50, and suppresses a drop in gate forward rising voltage. Thesemiconductor device 1H having such good performance is used and a high-performance and high-quality semiconductor package 400 is realized. - In this example the
semiconductor device 1H is used. However, a high-performance and high-quality semiconductor package is obtained in the same way by the use of thesemiconductor device - An example of the application of the semiconductor devices having the above structures to a power factor correction circuit will now be described as a tenth embodiment.
-
FIG. 19 is a view for describing an example of a power factor correction circuit according to a tenth embodiment.FIG. 19 is an equivalent circuit diagram of an example of a power factor correction circuit. - A power factor correction (PFC)
circuit 500 illustrated inFIG. 19 includes aswitching element 510, adiode 520, achoke coil 530, acondenser 540, acondenser 550, adiode bridge 560, and an alternating-current power supply 570 (AC). - In the
PFC circuit 500, a drain electrode of theswitching element 510, an anode terminal of thediode 520, and one terminal of thechoke coil 530 are connected. A source electrode of theswitching element 510, one terminal of thecondenser 540, and one terminal of thecondenser 550 are connected. The other terminal of thecondenser 540 and the other terminal of thechoke coil 530 are connected. The other terminal of thecondenser 550 and a cathode terminal of thediode 520 are connected. Furthermore, a gate driver is connected to a gate electrode of theswitching element 510. The alternating-current power supply 570 is connected via thediode bridge 560 between both terminals of thecondenser 540 and a direct-current power supply (DC) is taken from between both terminals of thecondenser 550. - For example, the
above semiconductor device 1H or thesemiconductor device element 510 included in thePFC circuit 500 having the above structure. As stated above, with thesemiconductor device 1H or the like heat generated by thesemiconductor layer 20 is efficiently transferred to thediamond layer 80 and the like. As a result, for example, the effect of suppression of an overheat or the effect of suppression of a failure or degradation of characteristics caused by the overheat is obtained. Thesemiconductor device 1H or the like having good performance is used and a high-performance and high-quality PFC circuit 500 is realized. - An example of the application of the semiconductor devices having the above structures to a power supply device will now be described as an eleventh embodiment.
-
FIG. 20 is a view for describing an example of a power supply device according to an eleventh embodiment.FIG. 20 is an equivalent circuit diagram of an example of a power supply device. - A
power supply device 600 illustrated inFIG. 20 includes a high-voltage primary-side circuit 610, a low-voltage secondary-side circuit 620, and atransformer 630 located between the primary-side circuit 610 and the secondary-side circuit 620. The primary-side circuit 610 includes thePFC circuit 500 described in the above tenth embodiment and an inverter circuit, such as a full-bridge inverter circuit 640 connected between both terminal of thecondenser 550 of thePFC circuit 500. The full-bridge inverter circuit 640 includes a plurality of switching elements. In this example, the full-bridge inverter circuit 640 includes four switchingelements side circuit 620 includes a plurality of switching elements. In this example, the secondary-side circuit 620 includes three switchingelements - For example, the
above semiconductor device 1H or thesemiconductor device element 510 of thePFC circuit 500 or the switchingelements 641 through 644 of the full-bridge inverter circuit 640 included in the primary-side circuit 610 of thepower supply device 600 having the above structure. For example, ordinary MIS-type FETs made of silicon are used as the switchingelements 621 through 623 of the secondary-side circuit 620 of thepower supply device 600. As stated above, with thesemiconductor device 1H or the like heat generated by thesemiconductor layer 20 is efficiently transferred to thediamond layer 80 and the like. As a result, for example, the effect of suppression of an overheat or the effect of suppression of a failure or degradation of characteristics caused by the overheat is obtained. Thesemiconductor device 1H or the like having good performance is used and a high-performance and high-qualitypower supply device 600 is realized. - An example of the application of the semiconductor devices having the above structures to an amplifier will now be described as a twelfth embodiment.
-
FIG. 21 is a view for describing an example of an amplifier according to a twelfth embodiment.FIG. 21 is an equivalent circuit diagram of an example of an amplifier. - An
amplifier 700 illustrated inFIG. 21 includes adigital predistortion circuit 710, amixer 720, amixer 730, and apower amplifier 740. - The
digital predistortion circuit 710 compensates for nonlinear distortion of an input signal. Themixer 720 mixes an input signal SI whose nonlinear distortion has been compensated for with an alternating-current signal. Thepower amplifier 740 amplifies the input signal SI mixed with the alternating-current signal. With theamplifier 700, for example, an output signal SO is mixed with an alternating-current signal by themixer 730 and is transmitted to thedigital predistortion circuit 710, by switching a switch. Theamplifier 700 is used as a high-frequency amplifier or a high output amplifier. - For example, the
above semiconductor device 1H or thesemiconductor device power amplifier 740 of theamplifier 700 having the above structure. As stated above, with thesemiconductor device 1H or the like heat generated by thesemiconductor layer 20 is efficiently transferred to thediamond layer 80 and the like. As a result, for example, the effect of suppression of an overheat or the effect of suppression of a failure or degradation of characteristics caused by the overheat is obtained. Thesemiconductor device 1H or the like having good performance is used and a high-performance and high-quality amplifier 700 is realized. - Various electronic devices (such as the
semiconductor package 400, thePFC circuit 500, thepower supply device 600, and theamplifier 700 described in the above ninth through twelfth embodiments respectively) to which theabove semiconductor device - According to an aspect, a semiconductor device having an excellent heat dissipation property is realized.
- All examples and conditional language provided herein are intended for the pedagogical purposes of aiding the reader in understanding the invention and the concepts contributed by the inventor to further the art, and are not to be construed as limitations to such specifically recited examples and conditions, nor does the organization of such examples in the specification relate to a showing of the superiority and inferiority of the invention. Although one or more embodiments of the present invention have been described in detail, it should be understood that various changes, substitutions, and alterations could be made hereto without departing from the spirit and scope of the invention.
Claims (3)
1. A semiconductor device fabrication method comprising:
a process for forming a source electrode and a drain electrode apart from each other over a first surface of a semiconductor layer;
a process for forming a first insulating film over a first region of the first surface, among a plurality of regions including the first region of the first surface on a side of the source electrode between the source electrode and the drain electrode, a second region of the first surface on a side of the drain electrode between the source electrode and the drain electrode, and a third region of the first surface between the first region and the second region between the source electrode and the drain electrode;
a process for forming a diamond layer having an opening corresponding to the third region over a second surface of the first insulating film opposite to the first surface and over the second region, the diamond layer being in contact with the second region; and
a process for forming a gate electrode in the opening.
2. The semiconductor device fabrication method according to claim 1 , wherein:
the semiconductor layer has a concave portion formed in the second region; and
the first surface includes an inside of the concave portion.
3. The semiconductor device fabrication method according to claim 1 , further comprising:
a process for forming a second insulating film over the third region,
wherein:
the opening is formed so as to reach the second insulating film; and
the gate electrode is formed in the opening which reaches the second insulating film.
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US17/096,995 US11688663B2 (en) | 2020-01-21 | 2020-11-13 | Semiconductor device, semiconductor device fabrication method, and electronic device |
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US20080099768A1 (en) * | 2005-04-29 | 2008-05-01 | Scarsbrook Geoffrey A | Diamond Transistor And Method Of Manufacture Thereof |
US20090121217A1 (en) * | 2007-11-08 | 2009-05-14 | Sanken Electric Co., Ltd. | Nitride compound semiconductor device including organic semiconductor layer under gate electrode |
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WO2009073866A1 (en) * | 2007-12-07 | 2009-06-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Gate after diamond transistor |
JP2016167522A (en) | 2015-03-09 | 2016-09-15 | 株式会社東芝 | Semiconductor device |
JP7009153B2 (en) | 2017-10-06 | 2022-01-25 | 富士通株式会社 | Semiconductor devices and methods for manufacturing semiconductor devices |
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US20080099768A1 (en) * | 2005-04-29 | 2008-05-01 | Scarsbrook Geoffrey A | Diamond Transistor And Method Of Manufacture Thereof |
US20090121217A1 (en) * | 2007-11-08 | 2009-05-14 | Sanken Electric Co., Ltd. | Nitride compound semiconductor device including organic semiconductor layer under gate electrode |
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