US20220404714A1 - Extractor piping on outermost sidewall of immersion hood appartus - Google Patents
Extractor piping on outermost sidewall of immersion hood appartus Download PDFInfo
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- US20220404714A1 US20220404714A1 US17/349,231 US202117349231A US2022404714A1 US 20220404714 A1 US20220404714 A1 US 20220404714A1 US 202117349231 A US202117349231 A US 202117349231A US 2022404714 A1 US2022404714 A1 US 2022404714A1
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- piping
- hood apparatus
- immersion hood
- extractor
- immersion
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28C—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA COME INTO DIRECT CONTACT WITHOUT CHEMICAL INTERACTION
- F28C3/00—Other direct-contact heat-exchange apparatus
- F28C3/04—Other direct-contact heat-exchange apparatus the heat-exchange media both being liquids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Definitions
- Integrated chips are fabricated in semiconductor fabrication facilities. Fabrication facilities contain processing tools that are configured to perform processing steps (e.g., etching steps, photolithography steps, deposition steps, etc.) upon a substrate.
- processing steps e.g., etching steps, photolithography steps, deposition steps, etc.
- Lithography is a commonly used fabrication process by which a photomask having a pattern is irradiated with electromagnetic radiation through a series of lenses to transfer the pattern onto a photosensitive material overlying a substrate. Selective parts of the substrate may be subsequently processed according to the patterned photosensitive material.
- FIG. 1 illustrates a cross-sectional view of some embodiments of an immersion hood apparatus comprising extractor piping on outermost sidewalls of the immersion hood apparatus configured to remove residual water from a semiconductor substrate.
- FIG. 2 illustrates a top-view of some embodiments of an immersion hood apparatus comprising extractor piping arranged on outermost sidewalls of the immersion hood apparatus configured to remove residual water from a semiconductor substrate.
- FIGS. 3 and 4 illustrate perspective views of some embodiments of an outermost sidewall of an immersion hood apparatus that comprises extractor piping.
- FIG. 5 illustrates a cross-sectional view of some embodiments of a lithography apparatus comprising a lens, light source, and photomask that is surrounded by an immersion hood apparatus comprising extractor piping on outermost sidewalls of the immersion hood apparatus.
- FIGS. 6 - 15 illustrate cross-sectional views of some embodiments of a method of performing immersion lithography using an immersion hood apparatus, wherein the immersion hood apparatus comprises extractor piping on outermost sidewalls of the immersion hood apparatus configured to remove residual water from a semiconductor substrate.
- FIG. 16 illustrates a flow diagram of some embodiments of the method corresponding to FIGS. 6 - 15 .
- first and second features are formed in direct contact
- additional features may be formed between the first and second features, such that the first and second features may not be in direct contact
- present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures.
- the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
- the apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- immersion lithography uses a liquid between a bottommost lens and a photosensitive layer to increase the resolution of a solubility pattern transferred from a photomask to the photosensitive layer.
- the resolution of the solubility pattern transferred onto the photosensitive layer is related to the refractive index of the liquid used in the immersion lithography process.
- the liquid used in immersion lithography has a refractive index greater than 1, such as water, for example.
- the photosensitive layer may be arranged over a semiconductor substrate, and various features are formed on or within the semiconductor substrate based on the solubility pattern transferred from the photomask to the photosensitive layer.
- the higher the resolution achieved by the immersion lithography process the smaller the size of the features formed on or within the semiconductor substrate may be.
- the size of the overall device is reduced.
- an immersion hood apparatus may comprise input piping used to inject water and output piping used to contain water on an immersion area of the semiconductor substrate.
- a lithography apparatus comprising a series of lenses, a photomask, and a light source may be arranged over the immersion hood apparatus and are configured to direct light onto the immersion area of the semiconductor substrate.
- the immersion hood apparatus and the lithography apparatus may stay stationary as the semiconductor substrate is moved around such that the pattern is transferred to the total desired area of the photosensitive layer on the semiconductor substrate.
- residual liquid e.g., water
- the residual liquid may damage features on the semiconductor substrate and/or negatively interfere with future processing steps.
- an immersion hood apparatus comprising the input and output piping, as well as extractor piping on outermost sidewalls of the immersion hood apparatus.
- the extractor piping is configured to remove residual liquid left behind on areas of the semiconductor substrate.
- the extractor piping is arranged at an angle favorable to remove the residual liquid up and away from the semiconductor substrate.
- FIG. 1 illustrates a cross-sectional view 100 of some embodiments of an immersion hood apparatus comprising extractor piping.
- the cross-sectional view 100 of FIG. 1 illustrates an immersion hood apparatus 106 arranged over a wafer chuck 102 .
- the immersion hood apparatus 106 comprises an opening 116
- a lithography apparatus 118 is arranged over the immersion hood apparatus 106 and the opening 116 .
- the lithography apparatus 118 comprises one or more lenses, a light source, and a photomask between the light source and the one or more lenses.
- the wafer chuck 102 is configured to hold a semiconductor substrate 104 , which may be or comprise a semiconductor wafer.
- a photosensitive layer 105 is arranged over the semiconductor substrate 104 .
- the immersion hood apparatus 106 comprises input piping 108 configured to inject a liquid 114 between a bottommost surface 118 b of the lithography apparatus 118 and portions of the wafer chuck 102 and the photosensitive layer 105 arranged directly below the opening 116 of the immersion hood apparatus 106 .
- the liquid 114 naturally spreads outwards, away from the opening 116 and the input piping 108 of the immersion hood apparatus 106 .
- the immersion hood apparatus 106 further comprises output piping 110 configured to remove the liquid 114 that travels away from the opening 116 and the input piping 108 of the immersion hood apparatus 106 .
- the output piping 110 is configured to contain the liquid 114 to an immersion area over the wafer chuck 102 defined by a perimeter of the output piping 110 .
- the input piping 108 and the output piping 110 are arranged on a lower surface of the immersion hood apparatus 106 .
- an immersion lithography process is performed, wherein light from the light source in the lithography apparatus 118 is directed through the photomask and the one or more lenses to change a solubility of portions of the photosensitive layer 105 according to the photomask. Because of the liquid 114 arranged between the lithography apparatus 118 and the photosensitive layer 105 , the light also travels through the liquid 114 .
- the liquid 114 has a refractive index greater than 1.
- the liquid 114 may comprise, for example, water.
- the liquid 114 increases the resolution of the light that reaches the photosensitive layer 105 according to the photomask, thereby reducing the sizes of features formed on the photosensitive layer 105 and/or the semiconductor substrate 104 based on the immersion lithography process.
- the wafer chuck 102 is configured to move and to hold onto the semiconductor substrate 104 while moving such that the immersion lithography process may be conducted on the entire area of the photosensitive layer 105 .
- the photosensitive layer 105 may be developed, or exposed to a wet etchant, to remove soluble portions of the photosensitive layer 105 as defined by the photomask and immersion lithography process.
- the immersion hood apparatus 106 further comprises extractor piping 112 arranged on outermost sidewalls 106 s of the immersion hood apparatus 106 .
- the extractor piping 112 is configured to remove residual liquid that escapes from between the immersion hood apparatus 106 and the wafer chuck 102 as the wafer chuck 102 moves during the immersion lithography process.
- the extractor piping 112 comprises a lower segment 112 L that extends from the outermost sidewalls 106 s and towards the opening 116 of the immersion hood apparatus and comprises an upper segment 112 U that extends from the lower segment 112 L and vertically away from the wafer chuck 102 .
- the lower segment 112 L of the extractor piping 112 is continuously connected to the upper segment 112 U of the extractor piping 112 .
- the lower segment 112 L meets the upper segment 112 U at a first angle A 1 measured on a side of the extractor piping 112 that is closest to the outermost sidewalls 106 s of the immersion hood apparatus 106 .
- the first angle A 1 is an obtuse angle, and thus, is greater than 90 degrees.
- the lower segment 112 L of the extractor piping 112 is arranged at a second angle A 2 with respect to the lower surface of the immersion hood apparatus 106 .
- the second angle A 2 is an acute angle, and thus, is less than 90 degrees.
- the somewhat horizontal and somewhat vertical lower segment 112 L of the extractor piping 112 increases the effectiveness of the extractor piping 112 of removing residual liquid up and away from the photosensitive layer 105 .
- the upper segment 112 U is arranged at a substantially right angle with respect to the lower surface of the immersion hood apparatus 106 .
- the lower segment 112 L of the extractor piping 112 has a first diameter d 1
- the upper segment 112 U of the extractor piping 112 has a second diameter d 2
- the first and second diameter d 1 , d 2 are each in a range of between, for example, approximately 0.05 millimeters and approximately 100 millimeters. In some embodiments, if the first or second diameters d 1 , d 2 are less than 0.05 millimeters, the extractor piping 112 may be too small to remove the liquid 114 . In some embodiments, the second diameter d 2 is greater than or equal to the first diameter d 1 .
- pressure or exhaust velocity in the lower segment 112 L of the extractor piping 112 is equal to or greater than pressure or exhaust velocity in the upper segment 112 U of the extractor piping 112 .
- FIG. 2 illustrates a top-view 200 of some embodiment of an immersion hood apparatus arranged over a semiconductor substrate.
- the immersion hood apparatus 106 has an overall square-like shape from the top-view 200 . In some other embodiments, the immersion hood apparatus 106 may have an overall rectangular-like shape, circular-like shape, or some other shape from the top-view 200 . In some embodiments, the input piping 108 and the output piping 110 of the immersion hood apparatus 106 may each comprise multiple pipes having openings spaced apart from one another. In some embodiments, the extractor piping 112 may comprise a continuous opening around the perimeter of the immersion hood apparatus 106 . In some other embodiments, the extractor piping 112 may comprise multiple pipes having openings 202 spaced apart from one another.
- the openings 202 are actually arranged on the outermost sidewall 106 s of the immersion hood apparatus 106 , and thus, are illustrated with dotted lines in the top-view 200 of FIG. 2 .
- the openings 202 of each pipe of the extractor piping 112 may have the first diameter d 1 .
- an inner perimeter of the immersion hood apparatus 106 may be defined by the opening 116 in the immersion hood apparatus 106 .
- the opening 116 may have an overall square-like shape from the top-view 200 , whereas in other embodiments, the opening 116 may have an overall rectangular-like shape, circular-like shape, or some other shape from the top-view 200 .
- the immersion hood apparatus 106 may completely and directly overlie the semiconductor substrate 104 , whereas during other parts of the immersion lithography process, the immersion hood apparatus 106 may only partially and directly overlie the semiconductor substrate 104 .
- the extractor piping 112 completely overlies the semiconductor substrate 104 , whereas in other embodiments and/or during other times of the immersion lithography process, only some of the extractor piping 112 directly overlies the semiconductor substrate 104 .
- the extractor piping 112 is arranged at the outer perimeter of the immersion hood apparatus 106 on the outermost sidewalls 106 s of the immersion hood apparatus 106 to remove any residual liquid arranged on portions of the photosensitive layer 105 that are not arranged directly between the immersion hood apparatus 106 and the semiconductor substrate 104 or that are not arranged directly between the opening 116 of the immersion hood apparatus 106 and the semiconductor substrate 104 .
- FIG. 3 illustrates a perspective view 300 of some embodiments of an outer sidewall of a portion of an immersion hood apparatus comprising extractor piping.
- the extractor piping 112 comprises a continuous pipe and opening 302 on the outermost sidewalls 106 s of the immersion hood apparatus 106 .
- FIG. 4 illustrates a perspective view 400 of some other embodiments of an outer sidewall of a portion of an immersion hood apparatus comprising extractor piping.
- the extractor piping 112 comprises multiple pipes with openings 202 on the outermost sidewalls 106 s of the immersion hood apparatus 106 .
- the exhaust force or the exhaust velocity of each pipe of the extractor piping 112 is greater than the exhaust force or the exhaust velocity of the continuous pipe and opening ( 302 of FIG. 3 ) as illustrated in the embodiment of FIG. 3 .
- the extractor piping 112 comprising multiple pipes with openings 202 as illustrated in FIG. 4 has a higher exhaust velocity and thus, is more effective in removing residual water from the photosensitive layer ( 105 of FIG. 1 ) during the immersion lithography process than extractor piping 112 that comprises a continuous pipe as illustrated in FIG. 3 .
- FIG. 5 illustrates a cross-sectional view 500 of some embodiments of an immersion hood apparatus and a lithography apparatus configured to pattern a first area of an underlying photosensitive layer.
- the lithography apparatus 118 comprises a light source 510 configured to apply light/electromagnetic radiation towards the photosensitive layer 105 beneath the opening 116 in the immersion hood apparatus 106 .
- the light source 510 is configured to apply light having a wavelength in a range of between, for example, approximately 175 nanometers and approximately 200 nanometers.
- the lithography apparatus 118 further comprises a photomask 508 arranged below the light source 510 .
- the photomask 508 may comprise a solubility pattern having portions that allow light to pass through and other portions that do not allow light to pass through. The light that passes through the photomask 508 changes the solubility of the photosensitive layer 105 .
- a series of lenses such as, a first lens 502 , a second lens 504 arranged over the first lens 502 , and a third lens 506 arranged over the second lens 504 , are arranged between the bottommost surface 118 b of the lithography apparatus 118 and the photomask 508 .
- the first, second, and third lenses 502 , 504 , 506 focus the light from the light source 510 that travels through the photomask 508 towards a first area 512 on the photosensitive layer 105 .
- the first, second, and third lenses 502 , 504 , 506 are used because the photomask 508 is larger than the desired solubility pattern to be transferred onto the first area 512 of the photosensitive layer 105 .
- the solubility pattern defined by the photomask 508 is reduced in size and transferred onto the first area 512 of the photosensitive layer 105 with a high resolution.
- the liquid 114 is arranged between the bottommost lens (i.e., the first lens 502 ) and the first area 512 of the photosensitive layer 105 .
- the liquid 114 when light travels through the liquid 114 instead of, for example, air, the resolution of the light and thus, the solubility pattern transferred from the photomask 508 to the first area 512 of the photosensitive layer 105 is increased.
- FIGS. 6 - 15 illustrate various views 600 - 1500 of some embodiments of a method of conducting an immersion lithography process, wherein extractor piping on outermost sidewalls of an immersion hood apparatus removes residual water as the immersion lithography process is conducted on different areas over a semiconductor substrate.
- FIGS. 6 - 15 are described in relation to a method, it will be appreciated that the structures disclosed in FIGS. 6 - 15 are not limited to such a method, but instead may stand alone as structures independent of the method.
- a semiconductor substrate 104 is provided.
- the semiconductor substrate 104 may comprise any type of semiconductor body (e.g., silicon/CMOS bulk, SiGe, SOI, etc.) such as a semiconductor wafer or one or more die on a wafer, as well as any other type of semiconductor and/or epitaxial layers formed thereon and/or otherwise associated therewith.
- a photosensitive layer 105 is formed on the semiconductor substrate 104 .
- the photosensitive layer 105 comprises a material that may change in solubility when exposed to light having a certain wavelength or within a certain range of wavelengths.
- the photosensitive layer 105 may be formed by way of, for example, a spin-on process or some other deposition process (e.g., physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc.). Further, in some embodiments, other layers and/or features may be arranged between the photosensitive layer 105 and the semiconductor substrate 104 , such as, for example, dielectric layers, conductive features (e.g., wires, vias), transistors, or the like.
- PVD physical vapor deposition
- CVD chemical vapor deposition
- ALD atomic layer deposition
- the semiconductor substrate 104 is transported onto a wafer chuck 102 and is arranged below an immersion hood apparatus 106 and a lithography apparatus 118 .
- the lithography apparatus 118 is laterally surrounded by the immersion hood apparatus 206 and is arranged directly over an opening 116 of the immersion hood apparatus 106 .
- the lithography apparatus 118 comprises a light source 510 , a photomask 508 , and a first lens 502 arranged directly over the opening 116 of the immersion hood apparatus 106 .
- the lithography apparatus 118 comprises more than one lens, such as, for example, a second lens 504 and a third lens 506 in addition to the first lens 502 .
- the immersion hood apparatus 106 comprises input piping 108 and output piping 110 arranged on a lower surface of the immersion hood apparatus 106 and comprises extractor piping 112 arranged on outermost sidewalls 106 s of the immersion hood apparatus 106 .
- the immersion hood apparatus 106 is turned “ON” such that a liquid 114 is injected 802 onto an immersion area of the photosensitive layer 105 via the input piping 108 of the immersion hood apparatus 106 .
- the liquid 114 has a refractive index greater than 1.
- the liquid 114 comprises, for example, water.
- the input piping 108 injects 802 the liquid 114 at a rate of between, for example, approximately 1000 milliliters per minute to approximately 1350 milliliters per minute.
- the liquid 114 completely fills a space directly between the photosensitive layer 105 and a bottommost surface 118 b of the lithography apparatus 118 and/or directly between a lowermost lens (i.e., the first lens 502 ) and the photosensitive layer 105 .
- the output piping 110 removes 804 any of the liquid 114 that moves away from the input piping 108 towards an edge of the semiconductor substrate 104 .
- the output piping 110 may confine the liquid to the immersion area on the photosensitive layer 105 , as defined by a perimeter of the output piping 110 .
- the output piping 110 removes 804 the liquid 114 at a rate between, for example, approximately 50 milliliters per minute and approximately 100 milliliters per minute.
- the input piping 108 and the output piping 110 each have a diameter in a range of between, for example, approximately 0.05 millimeters and approximately 100 millimeters.
- the light source 510 is turned “ON.”
- the light 902 is directed towards the photomask 508 .
- the light 902 has a wavelength in a range of between, for example, approximately 175 nanometers and approximately 200 nanometers. It will be appreciated that other wavelengths are also within the scope of this disclosure.
- only some of the light 902 emitted from the light source 510 is able to pass through the photomask 508 based on the solubility pattern of the photomask 508 . Then, in some embodiments, the light 902 travels through the first, second, and/or third lenses 502 , 504 , 506 and also travels through the liquid 114 to transfer the solubility pattern of the photomask 508 to a first area 512 on the photosensitive layer 105 . Because the light 902 travels through the liquid 114 , the solubility pattern is transferred onto the photosensitive layer 105 at a higher resolution than if the light 902 traveled through air before reaching the first area 512 .
- FIG. 10 illustrates a top-view 1000 of some embodiments of the semiconductor substrate 104 after the first area 512 is exposed to the light ( 902 of FIG. 9 ) according to the photomask ( 508 of FIG. 9 ).
- the first area 512 is only a small portion of the total area of the photosensitive layer 105 .
- the steps of the immersion lithography process illustrated in FIGS. 8 and/or 9 may be repeated many times to transfer the solubility pattern of the photomask ( 508 of FIG. 9 ) to the total area of the photosensitive layer 105 .
- the wafer chuck 102 is moved 1102 such that a new area of the photosensitive layer 105 may be exposed to the solubility pattern of the photomask 508 by the immersion lithography process.
- the wafer chuck 102 is configured to securely hold onto the semiconductor substrate 104 and thus, the photosensitive layer 105 as the wafer chuck 102 is moved 1102 .
- the immersion hood apparatus 106 and the lithography apparatus 118 remain stationary while the wafer chuck 102 moves.
- the input and output piping 108 , 110 continue to inject 802 and remove 804 , respectively, the liquid 114 to confine the liquid 114 within the immersion area defined by the perimeter of the output piping 110 .
- some of the liquid 114 inevitably escapes from the immersion area, and thus, residual liquid 1104 escape to a portion of the photosensitive layer 105 that is not directly between the immersion hood apparatus 106 and the wafer chuck 102 .
- the residual liquid 1104 could damage the photosensitive layer 105 and/or future processing steps on the semiconductor substrate 104 .
- the extractor piping 112 is arranged on the outermost sidewalls 106 s of the immersion hood apparatus 106 to remove residual liquid 1104 arranged outside of the immersion hood apparatus 106 outer perimeter.
- the extractor piping 112 comprises a lower segment 112 L and an upper segment 112 U that meet at a first angle A 1 that is greater than 90 degrees.
- the lower segment 112 L is arranged at a second angle A 2 with respect to a lower surface of the immersion hood apparatus 106 .
- the second angle A 2 is between 0 and 90 degrees.
- the lower segment 112 L of the extractor piping 112 has a first diameter d 1
- the upper segment 112 U of the extractor piping 112 has a second diameter d 2
- the second diameter d 2 is greater than or equal to the first diameter d 1
- the first and second angles A 1 , A 2 as well as the relationship between the first and second diameters d 1 , d 2 help increase the exhaust velocity of the extractor piping 112 to increase the rate and effectiveness of removal of the residual liquid 1104 .
- the extractor piping 112 may remove 1106 the residual liquid 1104 from the photosensitive layer 105 .
- the cross-sectional view 1100 A of FIG. 11 A illustrates a first time period
- the cross-sectional view 1100 B of FIG. 11 B illustrates a second time period after the first time period.
- the previous location 1104 p of the residual liquid 1104 is illustrated in FIG. 11 B with dotted lines for convenience.
- the extractor piping 112 is continuously running or is always “ON” while the input and output piping 108 , 110 are “ON” such that the extractor piping 112 may remove any residual liquid 1104 outside of immersion hood apparatus 106 at any time during the immersion lithography process. In other embodiments, the extractor piping 112 may be turned “ON” only while the wafer chuck 102 moves 1102 .
- the extractor piping 112 When the extractor piping 112 is continuously “ON,” even if, in some embodiments, residual liquid 1104 is left behind on the photosensitive layer 105 during various steps of the immersion lithography process, the extractor piping 112 is arranged on outermost sidewalls 106 s of the immersion hood apparatus 106 to remove the residual liquid 1104 , thereby mitigating damage to the photosensitive layer 105 and/or overall devices formed on or within the semiconductor substrate 104 .
- the light source 510 is again turned “ON” to transfer the solubility pattern from the photomask 508 to a second area 1202 on the photosensitive layer 105 .
- FIG. 13 illustrates a top-view 1300 of some embodiments of the semiconductor substrate 104 after the second area 1202 is exposed to the light ( 902 of FIG. 12 ) according to the photomask ( 508 of FIG. 12 ).
- the second area 1202 may be arranged next to, but not overlapping, with the first area 512 .
- the size and shape of the first and second areas 512 , 1202 from the top-view 1300 are an example, and that in other embodiments, the size and shape of the first and second areas 512 , 1202 may be different than what is illustrated in the top-view 1300 of FIG. 13 .
- FIG. 14 illustrates a top-view 1400 of some embodiments of the photosensitive layer 105 after the immersion lithography process of FIGS. 8 - 12 , for example, is repeated over the total area of the photosensitive layer 105 .
- the total area of the photosensitive layer 105 may be defined as the surface area of the top surface of the photosensitive layer 105 .
- the solubility pattern of the photomask ( 508 of FIG. 12 ) may be transferred to multiple areas (e.g., the first area 512 , the second area 1202 ) of the photosensitive layer 105 such that the total area of the photosensitive layer 105 comprises soluble regions and insoluble regions.
- the immersion lithography process may only be repeated over part of the total area of the photosensitive layer 105 .
- soluble regions of the photosensitive layer are removed by a developer or wet etchant such that a patterned photosensitive layer 1502 is arranged over the semiconductor substrate 104 .
- features of the patterned photosensitive layer 1502 may a first width w 1 that is in a range of between, for example, approximately 1 nanometer and approximately 45 nanometers.
- the features of the patterned photosensitive layer 1502 may be spaced apart by a first space distance s 1 .
- the first space distance s 1 may also be in a range of between, for example, approximately 1 nanometer and approximately 45 nanometers.
- the features of the patterned photosensitive layer 1502 may have a first pitch p 1 in a range of between, for example, approximately 2 nanometers and approximately 90 nanometers. It will be appreciated that other values for the first width w 1 , the first space distance s 1 , and the first pitch p 1 are also within the scope of this disclosure. Further, it will be appreciated that in some embodiments, the method may continue with portions of the semiconductor substrate 104 and/or layers between the semiconductor substrate 104 and the patterned photosensitive layer 1502 being removed according to the patterned photosensitive layer 1502 and with deposition processes performed to form one or more semiconductor devices on or within the semiconductor substrate 104 .
- features and/or spacing between the features of the semiconductor devices may be relatively small (e.g., less than about 45 nanometers) and damage to such small semiconductor devices is mitigated.
- FIG. 16 illustrates a flow diagram of some embodiments of a method 1600 of performing an immersion lithography process using extractor piping to reduce damage by liquid left behind on a semiconductor substrate from the immersion lithography process.
- method 1600 is illustrated and described below as a series of acts or events, it will be appreciated that the illustrated ordering of such acts or events are not to be interpreted in a limiting sense. For example, some acts may occur in different orders and/or concurrently with other acts or events apart from those illustrated and/or described herein. In addition, not all illustrated acts may be required to implement one or more aspects or embodiments of the description herein. Further, one or more of the acts depicted herein may be carried out in one or more separate acts and/or phases.
- FIG. 6 illustrates cross-sectional view 600 of some embodiments that may correspond to act 1602 .
- the semiconductor substrate is loaded onto a wafer chuck, wherein an immersion hood apparatus directly overlies the semiconductor substrate, and wherein a light source, photomask, and lens are arranged directly over the semiconductor substrate and within an opening of the immersion hood apparatus.
- FIG. 7 illustrates cross-sectional view 700 of some embodiments that may correspond to act 1604 .
- a liquid is applied over the semiconductor substrate and directly under the opening in the immersion hood apparatus and lens by using input piping of the immersion hood apparatus.
- FIG. 8 illustrates cross-sectional view 800 of some embodiments that may correspond to acts 1606 and 1608 .
- a light source is used to apply light through the photomask, the lens, the liquid, and the photosensitive layer to change the solubility of portions of a first area of the photosensitive layer.
- FIG. 9 illustrates cross-sectional view 900 of some embodiments that may correspond to act 1610 .
- FIGS. 11 A and 11 B illustrate cross-sectional views 1100 A and 1100 B, respectively, of some embodiments that may correspond to act 1612 .
- the light source is used to apply light through the photomask, the lens, the liquid, and the photosensitive layer to change the solubility of portions of a second area of the photosensitive layer.
- FIG. 12 illustrates cross-sectional view 1200 of some embodiments that may correspond to act 1614 .
- an immersion hood apparatus comprises extractor piping on outer sidewalls of the immersion hood apparatus to remove any residual liquid that escapes from the immersion hood apparatus and thus, to mitigate damage to devices formed on or within the semiconductor substrate.
- the present disclosure relates to a process tool, comprising: a lithography apparatus arranged over a wafer chuck and comprising: a photomask arranged over the wafer chuck, a light source arranged over the photomask, and a lens arranged between the photomask and the wafer chuck; and an immersion hood apparatus arranged over the wafer chuck and laterally around the lithography apparatus, wherein the immersion hood apparatus comprises: input piping arranged on a lower surface of the immersion hood apparatus and configured to distribute a liquid between the lens and the wafer chuck, output piping arranged on the lower surface of the immersion hood apparatus and configured to contain the liquid arranged between the lens and the wafer chuck, and extractor piping arranged on an outer sidewall of the immersion hood apparatus and configured to remove any liquid above the wafer chuck that is outside of the immersion hood apparatus.
- the present disclosure relates to a process tool comprising: a wafer chuck configured to hold a semiconductor substrate; a lens arranged over the wafer chuck; a light source arranged over the lens; and an immersion hood apparatus arranged over the wafer chuck, wherein the lens is laterally surrounded by the immersion hood apparatus, and wherein the immersion hood apparatus comprises: input piping arranged on a lower surface of the immersion hood apparatus and configured to distribute a liquid between the lower surface of the immersion hood apparatus and the wafer chuck and between the lens and the wafer chuck, output piping arranged on the lower surface of the immersion hood and configured to contain the liquid arranged between the immersion hood apparatus and the wafer chuck, wherein the output piping laterally surrounds the input piping, and extractor piping arranged on a sidewall of the immersion hood apparatus and configured to remove residual liquid outside of an area of the semiconductor substrate that underlies the immersion hood apparatus and the lens, wherein the extractor piping is farther from the lens than the output
- the present disclosure relates to a method comprising: forming a photosensitive layer over a semiconductor substrate; loading the semiconductor substrate onto a wafer chuck, wherein an immersion hood apparatus overlies the semiconductor substrate, and wherein a light source, photomask, and lens are arranged over the semiconductor substrate and an opening in the immersion hood apparatus; using input piping of the immersion hood apparatus to apply a liquid over the semiconductor substrate and directly underlying the opening in the immersion hood apparatus and the lens; using output piping of the immersion hood such that the liquid is confined to an immersion area directly between the opening and the semiconductor substrate; using the light source to apply light through the photomask, the lens, the liquid, and the photosensitive layer to change the solubility of portions of a first area of the photosensitive layer according to the photomask; moving the wafer chuck; and using the light source to apply light through the photomask, the lens, the liquid, and the photosensitive layer to change the solubility of portions of a second area of the photosensitive layer according to the photomas
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Abstract
In some embodiments, the present disclosure relates to a process tool that includes a lithography apparatus arranged over a wafer chuck and an immersion hood apparatus laterally around the lithography apparatus. The lithography apparatus includes a photomask arranged between a light source and a lens. The immersion hood apparatus comprises input piping, output piping, and extractor piping. The input piping is arranged on a lower surface of the immersion hood apparatus and configured to distribute a liquid between the lens and the wafer chuck. The output piping is arranged on the lower surface of the immersion hood apparatus and configured to contain the liquid arranged between the lens and the wafer chuck. The extractor piping is arranged on an outer sidewall of the immersion hood apparatus and configured to remove any liquid above the wafer chuck that is outside of the immersion hood apparatus.
Description
- Integrated chips are fabricated in semiconductor fabrication facilities. Fabrication facilities contain processing tools that are configured to perform processing steps (e.g., etching steps, photolithography steps, deposition steps, etc.) upon a substrate. Lithography is a commonly used fabrication process by which a photomask having a pattern is irradiated with electromagnetic radiation through a series of lenses to transfer the pattern onto a photosensitive material overlying a substrate. Selective parts of the substrate may be subsequently processed according to the patterned photosensitive material.
- Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
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FIG. 1 illustrates a cross-sectional view of some embodiments of an immersion hood apparatus comprising extractor piping on outermost sidewalls of the immersion hood apparatus configured to remove residual water from a semiconductor substrate. -
FIG. 2 illustrates a top-view of some embodiments of an immersion hood apparatus comprising extractor piping arranged on outermost sidewalls of the immersion hood apparatus configured to remove residual water from a semiconductor substrate. -
FIGS. 3 and 4 illustrate perspective views of some embodiments of an outermost sidewall of an immersion hood apparatus that comprises extractor piping. -
FIG. 5 illustrates a cross-sectional view of some embodiments of a lithography apparatus comprising a lens, light source, and photomask that is surrounded by an immersion hood apparatus comprising extractor piping on outermost sidewalls of the immersion hood apparatus. -
FIGS. 6-15 illustrate cross-sectional views of some embodiments of a method of performing immersion lithography using an immersion hood apparatus, wherein the immersion hood apparatus comprises extractor piping on outermost sidewalls of the immersion hood apparatus configured to remove residual water from a semiconductor substrate. -
FIG. 16 illustrates a flow diagram of some embodiments of the method corresponding toFIGS. 6-15 . - The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- Instead of using air as in dry photolithography, immersion lithography uses a liquid between a bottommost lens and a photosensitive layer to increase the resolution of a solubility pattern transferred from a photomask to the photosensitive layer. The resolution of the solubility pattern transferred onto the photosensitive layer is related to the refractive index of the liquid used in the immersion lithography process. Oftentimes, the liquid used in immersion lithography has a refractive index greater than 1, such as water, for example. The photosensitive layer may be arranged over a semiconductor substrate, and various features are formed on or within the semiconductor substrate based on the solubility pattern transferred from the photomask to the photosensitive layer. Thus, the higher the resolution achieved by the immersion lithography process, the smaller the size of the features formed on or within the semiconductor substrate may be. By reducing the size of features and/or the space between features formed on or within a semiconductor substrate, the size of the overall device is reduced.
- In immersion lithography, an immersion hood apparatus may comprise input piping used to inject water and output piping used to contain water on an immersion area of the semiconductor substrate. A lithography apparatus comprising a series of lenses, a photomask, and a light source may be arranged over the immersion hood apparatus and are configured to direct light onto the immersion area of the semiconductor substrate. The immersion hood apparatus and the lithography apparatus may stay stationary as the semiconductor substrate is moved around such that the pattern is transferred to the total desired area of the photosensitive layer on the semiconductor substrate.
- However, in some embodiments, as the semiconductor substrate is moved around, residual liquid (e.g., water) may be left behind on the semiconductor substrate and does not get removed from the semiconductor substrate by the output piping of the immersion hood apparatus. The residual liquid (e.g., water) may damage features on the semiconductor substrate and/or negatively interfere with future processing steps.
- Various embodiments of the present disclosure relate to an immersion hood apparatus comprising the input and output piping, as well as extractor piping on outermost sidewalls of the immersion hood apparatus. The extractor piping is configured to remove residual liquid left behind on areas of the semiconductor substrate. In some embodiments, the extractor piping is arranged at an angle favorable to remove the residual liquid up and away from the semiconductor substrate. By reducing or even eliminating residual liquid left behind by immersion lithography, the extractor piping on the outermost sidewalls of the immersion hood apparatus mitigates damage to and increases reliability of features on the semiconductor substrate.
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FIG. 1 illustrates across-sectional view 100 of some embodiments of an immersion hood apparatus comprising extractor piping. - The
cross-sectional view 100 ofFIG. 1 illustrates animmersion hood apparatus 106 arranged over awafer chuck 102. In some embodiments, theimmersion hood apparatus 106 comprises an opening 116, and alithography apparatus 118 is arranged over theimmersion hood apparatus 106 and the opening 116. In some embodiments, thelithography apparatus 118 comprises one or more lenses, a light source, and a photomask between the light source and the one or more lenses. In some embodiments, thewafer chuck 102 is configured to hold asemiconductor substrate 104, which may be or comprise a semiconductor wafer. Further, in some embodiments, aphotosensitive layer 105 is arranged over thesemiconductor substrate 104. - In some embodiments, the
immersion hood apparatus 106 comprisesinput piping 108 configured to inject aliquid 114 between abottommost surface 118 b of thelithography apparatus 118 and portions of thewafer chuck 102 and thephotosensitive layer 105 arranged directly below the opening 116 of theimmersion hood apparatus 106. In some embodiments, theliquid 114 naturally spreads outwards, away from the opening 116 and theinput piping 108 of theimmersion hood apparatus 106. Thus, in some embodiments, theimmersion hood apparatus 106 further comprisesoutput piping 110 configured to remove theliquid 114 that travels away from theopening 116 and theinput piping 108 of theimmersion hood apparatus 106. In other words, theoutput piping 110 is configured to contain theliquid 114 to an immersion area over thewafer chuck 102 defined by a perimeter of theoutput piping 110. In some embodiments, theinput piping 108 and theoutput piping 110 are arranged on a lower surface of theimmersion hood apparatus 106. - During operation, an immersion lithography process is performed, wherein light from the light source in the
lithography apparatus 118 is directed through the photomask and the one or more lenses to change a solubility of portions of thephotosensitive layer 105 according to the photomask. Because of theliquid 114 arranged between thelithography apparatus 118 and thephotosensitive layer 105, the light also travels through theliquid 114. In some embodiments, theliquid 114 has a refractive index greater than 1. In some embodiments, theliquid 114, may comprise, for example, water. Theliquid 114 increases the resolution of the light that reaches thephotosensitive layer 105 according to the photomask, thereby reducing the sizes of features formed on thephotosensitive layer 105 and/or thesemiconductor substrate 104 based on the immersion lithography process. In some embodiments, thewafer chuck 102 is configured to move and to hold onto thesemiconductor substrate 104 while moving such that the immersion lithography process may be conducted on the entire area of thephotosensitive layer 105. Then, in some embodiments, thephotosensitive layer 105 may be developed, or exposed to a wet etchant, to remove soluble portions of thephotosensitive layer 105 as defined by the photomask and immersion lithography process. - In some embodiments, the
immersion hood apparatus 106 further comprisesextractor piping 112 arranged onoutermost sidewalls 106 s of theimmersion hood apparatus 106. Theextractor piping 112 is configured to remove residual liquid that escapes from between theimmersion hood apparatus 106 and thewafer chuck 102 as thewafer chuck 102 moves during the immersion lithography process. In some embodiments, theextractor piping 112 comprises alower segment 112L that extends from theoutermost sidewalls 106 s and towards the opening 116 of the immersion hood apparatus and comprises anupper segment 112U that extends from thelower segment 112L and vertically away from thewafer chuck 102. Thelower segment 112L of theextractor piping 112 is continuously connected to theupper segment 112U of theextractor piping 112. - In some embodiments, the
lower segment 112L meets theupper segment 112U at a first angle A1 measured on a side of theextractor piping 112 that is closest to theoutermost sidewalls 106 s of theimmersion hood apparatus 106. In some embodiments, the first angle A1 is an obtuse angle, and thus, is greater than 90 degrees. In some embodiments, thelower segment 112L of theextractor piping 112 is arranged at a second angle A2 with respect to the lower surface of theimmersion hood apparatus 106. In some embodiments, the second angle A2 is an acute angle, and thus, is less than 90 degrees. In such embodiments, the somewhat horizontal and somewhat verticallower segment 112L of the extractor piping 112 increases the effectiveness of the extractor piping 112 of removing residual liquid up and away from thephotosensitive layer 105. In some embodiments, theupper segment 112U is arranged at a substantially right angle with respect to the lower surface of theimmersion hood apparatus 106. - Further, in some embodiments, the
lower segment 112L of theextractor piping 112 has a first diameter d1, and theupper segment 112U of theextractor piping 112 has a second diameter d2. In some embodiments, the first and second diameter d1, d2 are each in a range of between, for example, approximately 0.05 millimeters and approximately 100 millimeters. In some embodiments, if the first or second diameters d1, d2 are less than 0.05 millimeters, theextractor piping 112 may be too small to remove the liquid 114. In some embodiments, the second diameter d2 is greater than or equal to the first diameter d1. Accordingly, in some embodiments, pressure or exhaust velocity in thelower segment 112L of theextractor piping 112 is equal to or greater than pressure or exhaust velocity in theupper segment 112U of theextractor piping 112. This way, residual liquid that is not arranged directly between theimmersion hood apparatus 106 and thewafer chuck 102 may be effectively removed by the extractor piping 112 to reduce defects cause by residual liquid over thephotosensitive layer 105 as the immersion lithography process is conducted. -
FIG. 2 illustrates a top-view 200 of some embodiment of an immersion hood apparatus arranged over a semiconductor substrate. - In some embodiments, the
immersion hood apparatus 106 has an overall square-like shape from the top-view 200. In some other embodiments, theimmersion hood apparatus 106 may have an overall rectangular-like shape, circular-like shape, or some other shape from the top-view 200. In some embodiments, the input piping 108 and the output piping 110 of theimmersion hood apparatus 106 may each comprise multiple pipes having openings spaced apart from one another. In some embodiments, theextractor piping 112 may comprise a continuous opening around the perimeter of theimmersion hood apparatus 106. In some other embodiments, theextractor piping 112 may comprise multiplepipes having openings 202 spaced apart from one another. In some embodiments, theopenings 202 are actually arranged on theoutermost sidewall 106 s of theimmersion hood apparatus 106, and thus, are illustrated with dotted lines in the top-view 200 ofFIG. 2 . In some embodiments, theopenings 202 of each pipe of theextractor piping 112 may have the first diameter d1. - Further, in some embodiments, an inner perimeter of the
immersion hood apparatus 106 may be defined by theopening 116 in theimmersion hood apparatus 106. In some embodiments, theopening 116 may have an overall square-like shape from the top-view 200, whereas in other embodiments, theopening 116 may have an overall rectangular-like shape, circular-like shape, or some other shape from the top-view 200. - In some embodiments, during parts of the immersion lithography process, the
immersion hood apparatus 106 may completely and directly overlie thesemiconductor substrate 104, whereas during other parts of the immersion lithography process, theimmersion hood apparatus 106 may only partially and directly overlie thesemiconductor substrate 104. Thus, in some embodiments and/or during some times of the immersion lithography process, the extractor piping 112 completely overlies thesemiconductor substrate 104, whereas in other embodiments and/or during other times of the immersion lithography process, only some of the extractor piping 112 directly overlies thesemiconductor substrate 104. Nevertheless, in some embodiments, theextractor piping 112 is arranged at the outer perimeter of theimmersion hood apparatus 106 on theoutermost sidewalls 106 s of theimmersion hood apparatus 106 to remove any residual liquid arranged on portions of thephotosensitive layer 105 that are not arranged directly between theimmersion hood apparatus 106 and thesemiconductor substrate 104 or that are not arranged directly between the opening 116 of theimmersion hood apparatus 106 and thesemiconductor substrate 104. -
FIG. 3 illustrates a perspective view 300 of some embodiments of an outer sidewall of a portion of an immersion hood apparatus comprising extractor piping. - In some embodiments, as in the perspective view 300 of
FIG. 3 , theextractor piping 112 comprises a continuous pipe andopening 302 on theoutermost sidewalls 106 s of theimmersion hood apparatus 106. -
FIG. 4 illustrates aperspective view 400 of some other embodiments of an outer sidewall of a portion of an immersion hood apparatus comprising extractor piping. - In some embodiments, as in the
perspective view 400 ofFIG. 4 , theextractor piping 112 comprises multiple pipes withopenings 202 on theoutermost sidewalls 106 s of theimmersion hood apparatus 106. In such embodiments, the exhaust force or the exhaust velocity of each pipe of theextractor piping 112 is greater than the exhaust force or the exhaust velocity of the continuous pipe and opening (302 ofFIG. 3 ) as illustrated in the embodiment ofFIG. 3 . Thus, in some embodiments, the extractor piping 112 comprising multiple pipes withopenings 202 as illustrated inFIG. 4 has a higher exhaust velocity and thus, is more effective in removing residual water from the photosensitive layer (105 ofFIG. 1 ) during the immersion lithography process than extractor piping 112 that comprises a continuous pipe as illustrated inFIG. 3 . -
FIG. 5 illustrates across-sectional view 500 of some embodiments of an immersion hood apparatus and a lithography apparatus configured to pattern a first area of an underlying photosensitive layer. - In some embodiments, the
lithography apparatus 118 comprises alight source 510 configured to apply light/electromagnetic radiation towards thephotosensitive layer 105 beneath theopening 116 in theimmersion hood apparatus 106. In some embodiments, thelight source 510 is configured to apply light having a wavelength in a range of between, for example, approximately 175 nanometers and approximately 200 nanometers. In some embodiments, thelithography apparatus 118 further comprises aphotomask 508 arranged below thelight source 510. Thephotomask 508 may comprise a solubility pattern having portions that allow light to pass through and other portions that do not allow light to pass through. The light that passes through thephotomask 508 changes the solubility of thephotosensitive layer 105. Further, in some embodiments, a series of lenses, such as, afirst lens 502, asecond lens 504 arranged over thefirst lens 502, and athird lens 506 arranged over thesecond lens 504, are arranged between thebottommost surface 118 b of thelithography apparatus 118 and thephotomask 508. In some embodiments, the first, second, andthird lenses light source 510 that travels through thephotomask 508 towards afirst area 512 on thephotosensitive layer 105. In some embodiments, the first, second, andthird lenses photomask 508 is larger than the desired solubility pattern to be transferred onto thefirst area 512 of thephotosensitive layer 105. Thus, between thefirst lens 502, thesecond lens 504, thethird lens 506, and/or the liquid 114, the solubility pattern defined by thephotomask 508 is reduced in size and transferred onto thefirst area 512 of thephotosensitive layer 105 with a high resolution. - In some embodiments, the liquid 114 is arranged between the bottommost lens (i.e., the first lens 502) and the
first area 512 of thephotosensitive layer 105. In some embodiments, when light travels through the liquid 114 instead of, for example, air, the resolution of the light and thus, the solubility pattern transferred from thephotomask 508 to thefirst area 512 of thephotosensitive layer 105 is increased. -
FIGS. 6-15 illustrate various views 600-1500 of some embodiments of a method of conducting an immersion lithography process, wherein extractor piping on outermost sidewalls of an immersion hood apparatus removes residual water as the immersion lithography process is conducted on different areas over a semiconductor substrate. AlthoughFIGS. 6-15 are described in relation to a method, it will be appreciated that the structures disclosed inFIGS. 6-15 are not limited to such a method, but instead may stand alone as structures independent of the method. - As shown in
cross-sectional view 600 ofFIG. 6 , asemiconductor substrate 104 is provided. In some embodiments, thesemiconductor substrate 104 may comprise any type of semiconductor body (e.g., silicon/CMOS bulk, SiGe, SOI, etc.) such as a semiconductor wafer or one or more die on a wafer, as well as any other type of semiconductor and/or epitaxial layers formed thereon and/or otherwise associated therewith. In some embodiments, aphotosensitive layer 105 is formed on thesemiconductor substrate 104. In some embodiments, thephotosensitive layer 105 comprises a material that may change in solubility when exposed to light having a certain wavelength or within a certain range of wavelengths. In some embodiments, thephotosensitive layer 105 may be formed by way of, for example, a spin-on process or some other deposition process (e.g., physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc.). Further, in some embodiments, other layers and/or features may be arranged between thephotosensitive layer 105 and thesemiconductor substrate 104, such as, for example, dielectric layers, conductive features (e.g., wires, vias), transistors, or the like. - As shown in
cross-sectional view 700 ofFIG. 7 , thesemiconductor substrate 104 is transported onto awafer chuck 102 and is arranged below animmersion hood apparatus 106 and alithography apparatus 118. In some embodiments, thelithography apparatus 118 is laterally surrounded by the immersion hood apparatus 206 and is arranged directly over anopening 116 of theimmersion hood apparatus 106. In some embodiments, thelithography apparatus 118 comprises alight source 510, aphotomask 508, and afirst lens 502 arranged directly over the opening 116 of theimmersion hood apparatus 106. In some embodiments, thelithography apparatus 118 comprises more than one lens, such as, for example, asecond lens 504 and athird lens 506 in addition to thefirst lens 502. In some embodiments, theimmersion hood apparatus 106 comprises input piping 108 and output piping 110 arranged on a lower surface of theimmersion hood apparatus 106 and comprises extractor piping 112 arranged onoutermost sidewalls 106 s of theimmersion hood apparatus 106. - As shown in
cross-sectional view 800 ofFIG. 8 , in some embodiments, theimmersion hood apparatus 106 is turned “ON” such that a liquid 114 is injected 802 onto an immersion area of thephotosensitive layer 105 via the input piping 108 of theimmersion hood apparatus 106. In some embodiments, the liquid 114 has a refractive index greater than 1. In some embodiments, the liquid 114 comprises, for example, water. In some embodiments, the input piping 108 injects 802 the liquid 114 at a rate of between, for example, approximately 1000 milliliters per minute to approximately 1350 milliliters per minute. In some embodiments, the liquid 114 completely fills a space directly between thephotosensitive layer 105 and abottommost surface 118 b of thelithography apparatus 118 and/or directly between a lowermost lens (i.e., the first lens 502) and thephotosensitive layer 105. - Meanwhile, in some embodiments, as the input piping 108 injects 802 the liquid over the
photosensitive layer 105, theoutput piping 110 removes 804 any of the liquid 114 that moves away from the input piping 108 towards an edge of thesemiconductor substrate 104. In such embodiments, theoutput piping 110 may confine the liquid to the immersion area on thephotosensitive layer 105, as defined by a perimeter of theoutput piping 110. In some embodiments, theoutput piping 110 removes 804 the liquid 114 at a rate between, for example, approximately 50 milliliters per minute and approximately 100 milliliters per minute. Further, in some embodiments, the input piping 108 and the output piping 110 each have a diameter in a range of between, for example, approximately 0.05 millimeters and approximately 100 millimeters. - As shown in
cross-sectional view 900 ofFIG. 9 , in some embodiments, after the liquid 114 is arranged between thefirst lens 502 and thephotosensitive layer 105 and while the input piping 108 and theoutput piping 110 are continuously injecting 802 and removing 804, respectively, the liquid 114, thelight source 510 is turned “ON.” In some embodiments, when thelight source 510 is turned “ON,”light 902 is directed towards thephotomask 508. In some embodiments, the light 902 has a wavelength in a range of between, for example, approximately 175 nanometers and approximately 200 nanometers. It will be appreciated that other wavelengths are also within the scope of this disclosure. In some embodiments, only some of the light 902 emitted from thelight source 510 is able to pass through thephotomask 508 based on the solubility pattern of thephotomask 508. Then, in some embodiments, the light 902 travels through the first, second, and/orthird lenses photomask 508 to afirst area 512 on thephotosensitive layer 105. Because the light 902 travels through the liquid 114, the solubility pattern is transferred onto thephotosensitive layer 105 at a higher resolution than if the light 902 traveled through air before reaching thefirst area 512. -
FIG. 10 illustrates a top-view 1000 of some embodiments of thesemiconductor substrate 104 after thefirst area 512 is exposed to the light (902 ofFIG. 9 ) according to the photomask (508 ofFIG. 9 ). - As shown in the top-
view 1000 ofFIG. 10 , in some embodiments, thefirst area 512 is only a small portion of the total area of thephotosensitive layer 105. In some such embodiments, the steps of the immersion lithography process illustrated inFIGS. 8 and/or 9 may be repeated many times to transfer the solubility pattern of the photomask (508 ofFIG. 9 ) to the total area of thephotosensitive layer 105. - As shown in
cross-sectional view 1100A ofFIG. 11A , in some embodiments, thewafer chuck 102 is moved 1102 such that a new area of thephotosensitive layer 105 may be exposed to the solubility pattern of thephotomask 508 by the immersion lithography process. In some embodiments, thewafer chuck 102 is configured to securely hold onto thesemiconductor substrate 104 and thus, thephotosensitive layer 105 as thewafer chuck 102 is moved 1102. In some embodiments, theimmersion hood apparatus 106 and thelithography apparatus 118 remain stationary while thewafer chuck 102 moves. - As the
wafer chuck 102 moves 1102, the input andoutput piping output piping 110. However, in some embodiments, some of the liquid 114 inevitably escapes from the immersion area, and thus, residual liquid 1104 escape to a portion of thephotosensitive layer 105 that is not directly between theimmersion hood apparatus 106 and thewafer chuck 102. In such embodiments, the residual liquid 1104 could damage thephotosensitive layer 105 and/or future processing steps on thesemiconductor substrate 104. - Thus, in some embodiments, the
extractor piping 112 is arranged on theoutermost sidewalls 106 s of theimmersion hood apparatus 106 to remove residual liquid 1104 arranged outside of theimmersion hood apparatus 106 outer perimeter. In some embodiments, theextractor piping 112 comprises alower segment 112L and anupper segment 112U that meet at a first angle A1 that is greater than 90 degrees. Further, in some embodiments, thelower segment 112L is arranged at a second angle A2 with respect to a lower surface of theimmersion hood apparatus 106. In some embodiments, the second angle A2 is between 0 and 90 degrees. In some embodiments, thelower segment 112L of theextractor piping 112 has a first diameter d1, and theupper segment 112U of theextractor piping 112 has a second diameter d2. In some embodiments, the second diameter d2 is greater than or equal to the first diameter d1. In some embodiments, the first and second angles A1, A2 as well as the relationship between the first and second diameters d1, d2 help increase the exhaust velocity of the extractor piping 112 to increase the rate and effectiveness of removal of theresidual liquid 1104. - As shown in
cross-sectional view 1100B ofFIG. 11B , as or after thewafer chuck 102 is moving 1102, theextractor piping 112 may remove 1106 the residual liquid 1104 from thephotosensitive layer 105. Thus, in some embodiments, thecross-sectional view 1100A ofFIG. 11A illustrates a first time period, and thecross-sectional view 1100B ofFIG. 11B illustrates a second time period after the first time period. Theprevious location 1104 p of theresidual liquid 1104 is illustrated inFIG. 11B with dotted lines for convenience. In some embodiments, theextractor piping 112 is continuously running or is always “ON” while the input andoutput piping extractor piping 112 may remove anyresidual liquid 1104 outside ofimmersion hood apparatus 106 at any time during the immersion lithography process. In other embodiments, theextractor piping 112 may be turned “ON” only while thewafer chuck 102 moves 1102. - When the
extractor piping 112 is continuously “ON,” even if, in some embodiments,residual liquid 1104 is left behind on thephotosensitive layer 105 during various steps of the immersion lithography process, theextractor piping 112 is arranged onoutermost sidewalls 106 s of theimmersion hood apparatus 106 to remove theresidual liquid 1104, thereby mitigating damage to thephotosensitive layer 105 and/or overall devices formed on or within thesemiconductor substrate 104. - As shown in
cross-sectional view 1200 ofFIG. 12 , in some embodiments, after moving (1102 ofFIG. 11B ) thewafer chuck 102, thelight source 510 is again turned “ON” to transfer the solubility pattern from thephotomask 508 to asecond area 1202 on thephotosensitive layer 105. -
FIG. 13 illustrates a top-view 1300 of some embodiments of thesemiconductor substrate 104 after thesecond area 1202 is exposed to the light (902 ofFIG. 12 ) according to the photomask (508 ofFIG. 12 ). In some embodiments, thesecond area 1202 may be arranged next to, but not overlapping, with thefirst area 512. It will be appreciated that the size and shape of the first andsecond areas view 1300 are an example, and that in other embodiments, the size and shape of the first andsecond areas view 1300 ofFIG. 13 . -
FIG. 14 illustrates a top-view 1400 of some embodiments of thephotosensitive layer 105 after the immersion lithography process ofFIGS. 8-12 , for example, is repeated over the total area of thephotosensitive layer 105. In some embodiments, the total area of thephotosensitive layer 105 may be defined as the surface area of the top surface of thephotosensitive layer 105. In some such embodiments, the solubility pattern of the photomask (508 ofFIG. 12 ) may be transferred to multiple areas (e.g., thefirst area 512, the second area 1202) of thephotosensitive layer 105 such that the total area of thephotosensitive layer 105 comprises soluble regions and insoluble regions. In some other embodiments, the immersion lithography process may only be repeated over part of the total area of thephotosensitive layer 105. - As shown in
cross-sectional view 1500 ofFIG. 15 , in some embodiments, soluble regions of the photosensitive layer (105 ofFIG. 14 ) are removed by a developer or wet etchant such that a patternedphotosensitive layer 1502 is arranged over thesemiconductor substrate 104. In some embodiments, features of the patternedphotosensitive layer 1502 may a first width w1 that is in a range of between, for example, approximately 1 nanometer and approximately 45 nanometers. Similarly, in some embodiments, the features of the patternedphotosensitive layer 1502 may be spaced apart by a first space distance s1. In some embodiments, the first space distance s1 may also be in a range of between, for example, approximately 1 nanometer and approximately 45 nanometers. Accordingly, in some embodiments, the features of the patternedphotosensitive layer 1502 may have a first pitch p1 in a range of between, for example, approximately 2 nanometers and approximately 90 nanometers. It will be appreciated that other values for the first width w1, the first space distance s1, and the first pitch p1 are also within the scope of this disclosure. Further, it will be appreciated that in some embodiments, the method may continue with portions of thesemiconductor substrate 104 and/or layers between thesemiconductor substrate 104 and the patternedphotosensitive layer 1502 being removed according to the patternedphotosensitive layer 1502 and with deposition processes performed to form one or more semiconductor devices on or within thesemiconductor substrate 104. - Because of the extractor piping utilized in the immersion lithography process, features and/or spacing between the features of the semiconductor devices may be relatively small (e.g., less than about 45 nanometers) and damage to such small semiconductor devices is mitigated.
-
FIG. 16 illustrates a flow diagram of some embodiments of amethod 1600 of performing an immersion lithography process using extractor piping to reduce damage by liquid left behind on a semiconductor substrate from the immersion lithography process. - While
method 1600 is illustrated and described below as a series of acts or events, it will be appreciated that the illustrated ordering of such acts or events are not to be interpreted in a limiting sense. For example, some acts may occur in different orders and/or concurrently with other acts or events apart from those illustrated and/or described herein. In addition, not all illustrated acts may be required to implement one or more aspects or embodiments of the description herein. Further, one or more of the acts depicted herein may be carried out in one or more separate acts and/or phases. - At
act 1602, a photosensitive layer is formed over a semiconductor substrate.FIG. 6 illustratescross-sectional view 600 of some embodiments that may correspond to act 1602. - At act 1604, the semiconductor substrate is loaded onto a wafer chuck, wherein an immersion hood apparatus directly overlies the semiconductor substrate, and wherein a light source, photomask, and lens are arranged directly over the semiconductor substrate and within an opening of the immersion hood apparatus.
FIG. 7 illustratescross-sectional view 700 of some embodiments that may correspond to act 1604. - At
act 1606, a liquid is applied over the semiconductor substrate and directly under the opening in the immersion hood apparatus and lens by using input piping of the immersion hood apparatus. - At
act 1608, output piping of the immersion hood apparatus is used to confine the liquid to an immersion area arranged directly between the opening and the semiconductor substrate.FIG. 8 illustratescross-sectional view 800 of some embodiments that may correspond toacts - At
act 1610, a light source is used to apply light through the photomask, the lens, the liquid, and the photosensitive layer to change the solubility of portions of a first area of the photosensitive layer.FIG. 9 illustratescross-sectional view 900 of some embodiments that may correspond to act 1610. - At
act 1612, the wafer chuck is moved, wherein exhaust piping on outer sidewalls of the immersion hood apparatus removes any residual liquid that escapes from the immersion area during the moving of the wafer chuck.FIGS. 11A and 11B illustratecross-sectional views - At
act 1614, the light source is used to apply light through the photomask, the lens, the liquid, and the photosensitive layer to change the solubility of portions of a second area of the photosensitive layer.FIG. 12 illustratescross-sectional view 1200 of some embodiments that may correspond to act 1614. - Therefore, the present disclosure relates to a method of performing an immersion lithography process over a semiconductor substrate, wherein an immersion hood apparatus comprises extractor piping on outer sidewalls of the immersion hood apparatus to remove any residual liquid that escapes from the immersion hood apparatus and thus, to mitigate damage to devices formed on or within the semiconductor substrate.
- Accordingly, in some embodiments, the present disclosure relates to a process tool, comprising: a lithography apparatus arranged over a wafer chuck and comprising: a photomask arranged over the wafer chuck, a light source arranged over the photomask, and a lens arranged between the photomask and the wafer chuck; and an immersion hood apparatus arranged over the wafer chuck and laterally around the lithography apparatus, wherein the immersion hood apparatus comprises: input piping arranged on a lower surface of the immersion hood apparatus and configured to distribute a liquid between the lens and the wafer chuck, output piping arranged on the lower surface of the immersion hood apparatus and configured to contain the liquid arranged between the lens and the wafer chuck, and extractor piping arranged on an outer sidewall of the immersion hood apparatus and configured to remove any liquid above the wafer chuck that is outside of the immersion hood apparatus.
- In other embodiments, the present disclosure relates to a process tool comprising: a wafer chuck configured to hold a semiconductor substrate; a lens arranged over the wafer chuck; a light source arranged over the lens; and an immersion hood apparatus arranged over the wafer chuck, wherein the lens is laterally surrounded by the immersion hood apparatus, and wherein the immersion hood apparatus comprises: input piping arranged on a lower surface of the immersion hood apparatus and configured to distribute a liquid between the lower surface of the immersion hood apparatus and the wafer chuck and between the lens and the wafer chuck, output piping arranged on the lower surface of the immersion hood and configured to contain the liquid arranged between the immersion hood apparatus and the wafer chuck, wherein the output piping laterally surrounds the input piping, and extractor piping arranged on a sidewall of the immersion hood apparatus and configured to remove residual liquid outside of an area of the semiconductor substrate that underlies the immersion hood apparatus and the lens, wherein the extractor piping is farther from the lens than the output piping.
- In yet other embodiments, the present disclosure relates to a method comprising: forming a photosensitive layer over a semiconductor substrate; loading the semiconductor substrate onto a wafer chuck, wherein an immersion hood apparatus overlies the semiconductor substrate, and wherein a light source, photomask, and lens are arranged over the semiconductor substrate and an opening in the immersion hood apparatus; using input piping of the immersion hood apparatus to apply a liquid over the semiconductor substrate and directly underlying the opening in the immersion hood apparatus and the lens; using output piping of the immersion hood such that the liquid is confined to an immersion area directly between the opening and the semiconductor substrate; using the light source to apply light through the photomask, the lens, the liquid, and the photosensitive layer to change the solubility of portions of a first area of the photosensitive layer according to the photomask; moving the wafer chuck; and using the light source to apply light through the photomask, the lens, the liquid, and the photosensitive layer to change the solubility of portions of a second area of the photosensitive layer according to the photomask, wherein exhaust piping arranged on outer sidewalls of the immersion hood apparatus removes any residual liquid that escaped from the immersion area when the wafer chuck moved.
- The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Claims (26)
1. A process tool, comprising:
a lithography apparatus arranged over a wafer chuck and comprising:
a photomask arranged over the wafer chuck,
a light source arranged over the photomask, and
a lens arranged between the photomask and the wafer chuck; and
an immersion hood apparatus arranged over the wafer chuck and laterally around the lithography apparatus, wherein the immersion hood apparatus comprises:
input piping arranged on a lower surface of the immersion hood apparatus and configured to distribute a liquid between the lens and the wafer chuck,
output piping arranged on the lower surface of the immersion hood apparatus and configured to contain the liquid arranged between the lens and the wafer chuck, and
extractor piping arranged on an outer sidewall of the immersion hood apparatus and configured to remove any liquid above the wafer chuck that is outside of the immersion hood apparatus, wherein the extractor piping extends into the immersion hood apparatus from the outer sidewall and is covered by an upper portion of the immersion hood apparatus.
2. The process tool of claim 1 , wherein the extractor piping comprises:
a lower segment arranged at an acute angle with respect to the lower surface of the immersion hood apparatus; and
an upper segment coupled to the lower segment and arranged at a right angle with respect to the lower surface of the immersion hood apparatus.
3. The process tool of claim 2 , wherein the lower segment meets the upper segment at an angle greater than 90 degrees.
4. The process tool of claim 3 , wherein the lower segment has a first diameter, and wherein the upper segment has a second diameter, and wherein the second diameter is greater than or equal to the first diameter.
5. The process tool of claim 3 , wherein pressure in the upper segment of the extractor piping is less than pressure in the lower segment of the extractor piping.
6. The process tool of claim 1 , wherein the extractor piping has a continuous opening on the outer sidewall of the immersion hood apparatus.
7. The process tool of claim 1 , wherein the extractor piping has multiple discrete openings on the outer sidewall of the immersion hood apparatus, and wherein the multiple discrete openings border on a common side of the immersion hood apparatus and are spaced from each other.
8. (canceled)
9. A process tool comprising:
a wafer chuck configured to hold a semiconductor substrate;
a lens arranged over the wafer chuck;
a light source arranged over the lens; and
an immersion hood apparatus arranged over the wafer chuck, wherein the lens is laterally surrounded by the immersion hood apparatus, and wherein the immersion hood apparatus comprises:
input piping arranged on a lower surface of the immersion hood apparatus and configured to distribute a liquid between the lower surface of the immersion hood apparatus and the wafer chuck and between the lens and the wafer chuck,
output piping arranged on the lower surface of the immersion hood apparatus and configured to contain the liquid arranged between the immersion hood apparatus and the wafer chuck, wherein the output piping laterally surrounds the input piping, and
extractor piping arranged on a sidewall of the immersion hood apparatus and configured to remove residual liquid outside of an area of the semiconductor substrate that underlies the immersion hood apparatus and the lens, wherein the extractor piping is farther from the lens than the output piping;
wherein the immersion hood apparatus comprises the sidewall and a second sidewall facing opposite directions and separated by a width of the immersion hood apparatus, and wherein the extractor piping extends into the immersion hood apparatus at a bottom corner of the sidewall and is configured to attract and remove the residual liquid outside of the area.
10. The process tool of claim 9 , wherein the wafer chuck is configured to move while the immersion hood apparatus and the lens remain stationary.
11. The process tool of claim 9 , wherein the extractor piping comprises multiple pipes on the sidewall of the immersion hood apparatus.
12. The process tool of claim 11 , wherein each pipe of the extractor piping has a lower segment arranged at an acute angle with respect to the lower surface of the immersion hood apparatus.
13. The process tool of claim 12 , wherein each pipe of the extractor piping has an upper segment that is substantially normal to the lower surface of the immersion hood apparatus.
14. (canceled)
15. The process tool of claim 9 , wherein the extractor piping has a diameter that varies throughout its length.
16. (canceled)
17. A method comprising:
forming a photosensitive layer over a semiconductor substrate;
loading the semiconductor substrate onto a wafer chuck, wherein an immersion hood apparatus overlies the semiconductor substrate, and wherein a light source, photomask, and a lens are arranged over the semiconductor substrate and an opening in the immersion hood apparatus;
using input piping of the immersion hood apparatus to apply a liquid over the semiconductor substrate and directly underlying the opening in the immersion hood apparatus and the lens;
using output piping of the immersion hood apparatus such that the liquid is confined to an immersion area directly between the opening and the semiconductor substrate;
using the light source to apply light through the photomask, the lens, the liquid, and the photosensitive layer to change a solubility of portions of a first area of the photosensitive layer according to the photomask;
moving the wafer chuck; and
using the light source to apply light through the photomask, the lens, the liquid, and the photosensitive layer to change a solubility of portions of a second area of the photosensitive layer according to the photomask,
wherein residual liquid escapes from the immersion area and becomes uncovered by the immersion hood apparatus during the moving,
wherein exhaust piping arranged on outer sidewalls of the immersion hood apparatus attracts and removes the residual liquid that escaped,
wherein the exhaust piping has a pair of exhaust piping segments respectively on opposite sides of the immersion hood apparatus,
wherein the exhaust piping segments extend into the immersion hood apparatus respectively from edges of a bottom surface of the immersion hood apparatus, and
wherein the exhaust piping segments extend laterally towards each other.
18. The method of claim 17 , wherein the liquid has a refractive index greater than one.
19. The method of claim 17 , further comprising:
developing the photosensitive layer to remove soluble portions of the photosensitive layer to form a patterned photosensitive layer comprising openings.
20. (canceled)
21. (canceled)
22. The process tool of claim 1 , wherein an inner sidewall of the immersion hood apparatus in the extractor piping is arranged edge-to-edge with the lower surface of the immersion hood apparatus, and wherein an edge-to-edge interface between the inner sidewall and the lower surface is directly under the outer sidewall of the immersion hood apparatus.
23. The process tool of claim 9 , wherein the immersion hood apparatus has a pair of inner sidewalls in the extractor piping and extending in parallel into an interior of the immersion hood apparatus, and wherein a first inner sidewall of the inner sidewalls extends from the bottom corner.
24. (canceled)
25. The process tool of claim 1 , wherein the extractor piping has a pair of extractor piping segments respectively on opposite sides of the immersion hood apparatus, wherein the extractor piping segments extend into the immersion hood apparatus respectively from edges of the lower surface of the immersion hood apparatus, and wherein the extractor piping segments extend laterally towards each other.
26. The process tool of claim 9 , wherein the extractor piping is covered by an upper portion of the immersion hood apparatus.
Priority Applications (4)
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US17/349,231 US11543754B1 (en) | 2021-06-16 | 2021-06-16 | Extractor piping on outermost sidewall of immersion hood apparatus |
TW110128592A TW202301031A (en) | 2021-06-16 | 2021-08-03 | Process tool including immersion hood apparatus and method of using the same |
CN202110918192.4A CN115145123A (en) | 2021-06-16 | 2021-08-11 | Processing tool including immersion hood apparatus and method of using the same |
US18/076,754 US11860547B2 (en) | 2021-06-16 | 2022-12-07 | Extractor piping on outermost sidewall of immersion hood apparatus |
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US17/349,231 US11543754B1 (en) | 2021-06-16 | 2021-06-16 | Extractor piping on outermost sidewall of immersion hood apparatus |
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US9329492B2 (en) * | 2008-10-22 | 2016-05-03 | Nikon Corporation | Apparatus and method to control vacuum at porous material using multiple porous materials |
US9952514B2 (en) * | 2005-06-28 | 2018-04-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10527955B2 (en) * | 2003-10-28 | 2020-01-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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KR20180089562A (en) * | 2003-04-10 | 2018-08-08 | 가부시키가이샤 니콘 | Environmental system including vaccum scavange for an immersion lithography apparatus |
US8208116B2 (en) | 2006-11-03 | 2012-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
US11543754B1 (en) * | 2021-06-16 | 2023-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extractor piping on outermost sidewall of immersion hood apparatus |
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US10527955B2 (en) * | 2003-10-28 | 2020-01-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9952514B2 (en) * | 2005-06-28 | 2018-04-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9329492B2 (en) * | 2008-10-22 | 2016-05-03 | Nikon Corporation | Apparatus and method to control vacuum at porous material using multiple porous materials |
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