US20220055254A1 - Template, template manufacturing method, and semiconductor device manufacturing method - Google Patents
Template, template manufacturing method, and semiconductor device manufacturing method Download PDFInfo
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- US20220055254A1 US20220055254A1 US17/518,929 US202117518929A US2022055254A1 US 20220055254 A1 US20220055254 A1 US 20220055254A1 US 202117518929 A US202117518929 A US 202117518929A US 2022055254 A1 US2022055254 A1 US 2022055254A1
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- United States
- Prior art keywords
- template
- pattern
- pedestal
- pedestal portion
- substrate
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- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000004065 semiconductor Substances 0.000 title description 11
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 71
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- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
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- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- ZCRUJAKCJLCJCP-UHFFFAOYSA-N 3-[methoxy(dimethyl)silyl]propyl prop-2-enoate Chemical compound CO[Si](C)(C)CCCOC(=O)C=C ZCRUJAKCJLCJCP-UHFFFAOYSA-N 0.000 description 1
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- BESKSSIEODQWBP-UHFFFAOYSA-N 3-tris(trimethylsilyloxy)silylpropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC[Si](O[Si](C)(C)C)(O[Si](C)(C)C)O[Si](C)(C)C BESKSSIEODQWBP-UHFFFAOYSA-N 0.000 description 1
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- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical class Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
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- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
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- NHARPDSAXCBDDR-UHFFFAOYSA-N propyl 2-methylprop-2-enoate Chemical compound CCCOC(=O)C(C)=C NHARPDSAXCBDDR-UHFFFAOYSA-N 0.000 description 1
- PNXMTCDJUBJHQJ-UHFFFAOYSA-N propyl prop-2-enoate Chemical compound CCCOC(=O)C=C PNXMTCDJUBJHQJ-UHFFFAOYSA-N 0.000 description 1
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- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- QYJYJTDXBIYRHH-UHFFFAOYSA-N trimethoxy-[8-(oxiran-2-ylmethoxy)octyl]silane Chemical compound C(C1CO1)OCCCCCCCC[Si](OC)(OC)OC QYJYJTDXBIYRHH-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
- B29C33/424—Moulding surfaces provided with means for marking or patterning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0888—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using transparant moulds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
- B29C37/0053—Moulding articles characterised by the shape of the surface, e.g. ribs, high polish
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/36—Moulds for making articles of definite length, i.e. discrete articles
- B29C43/38—Moulds for making articles of definite length, i.e. discrete articles with means to avoid flashes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
- B29C2043/023—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
- B29C2043/025—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
Definitions
- Embodiments described herein relate generally to a template, a template manufacturing method, and a semiconductor device manufacturing method.
- FIGS. 1A and 1B are views schematically illustrating a template according to a first embodiment.
- FIGS. 2A and 2B are cross-sectional views illustrating additional aspects of the template according to a first embodiment.
- FIGS. 3A to 3E illustrate aspects of a sequence of a manufacturing method of a template according to a first embodiment.
- FIG. 4 is a cross-sectional view schematically illustrating one example of a template according to a second embodiment.
- FIG. 5 is a cross-sectional view schematically illustrating another example of a template according to a second embodiment.
- FIGS. 6A to 6D illustrate aspects of a sequence of a manufacturing method of a template according to a third embodiment.
- FIG. 7 is a cross-sectional view schematically illustrating an example of a template according to a fourth embodiment.
- FIGS. 8A to 8D illustrate aspects of a sequence of a manufacturing method of a template according to a fourth embodiment.
- FIGS. 9A to 9D illustrate aspects of a sequence of a semiconductor device manufacturing method including a template according to a fourth embodiment.
- FIGS. 10A and 10B are cross-sectional views schematically illustrating a reproduction sequence of a template according to a fourth embodiment.
- FIG. 11 is a cross-sectional view schematically illustrating a template according to a fifth embodiment.
- FIG. 12 is a diagram schematically illustrating aspects related to an adhesion layer and a template according to a fifth embodiment.
- FIGS. 13A to 13E illustrate aspects of a sequence of a manufacturing method of a template according to a fifth embodiment.
- FIG. 14 is a cross-sectional view schematically illustrating a template manufactured by a method described in conjunction with a fourth embodiment.
- FIGS. 15A and 15B are cross-sectional views schematically illustrating aspects of a sequence of a manufacturing method of a template according to a sixth embodiment.
- Embodiments provide an imprint template, an imprint template manufacturing method, and a semiconductor device manufacturing method using an imprint template which can prevent a resist from seeping out from a periphery of a pedestal portion of the template during the imprint processing.
- a template for imprint patterning processes comprises a template substrate having a first surface and a pedestal on the first surface of the template substrate.
- the pedestal has a second surface spaced from the first surface of the template substrate in a first direction perpendicular (normal) to the first surface.
- a pattern is disposed on the second surface.
- the pedestal has a sidewall between the first surface and the second surface that is at an angle of less than 90° to the second surface.
- a template, a template manufacturing method, and a semiconductor device manufacturing method according to example embodiments will be hereinafter described in detail with reference to the accompanying drawings. It is noted that the present disclosure is not limited by these example embodiments.
- FIGS. 1A and 1B are views schematically illustrating an example configuration of a template according to a first embodiment.
- FIG. 1A is a top view
- FIG. 1B is a cross-sectional view taken along a line A-A of FIG. 1A .
- a template 1 includes a rectangular template substrate 2 and a pedestal portion 3 provided on (or approximately so) a central portion of a first surface 21 of template substrate 2 .
- the template substrate 2 has, for example, a generally rectangular flat plate structure.
- the template substrate 2 is formed of quartz glass or the like.
- the pedestal portion 3 has a quadrangular pyramidal structure.
- An uneven pattern 33 that is to be brought into contact with a resist on a workpiece during the imprint processing is provided on a first surface 31 of the pedestal portion 3 .
- a pattern arrangement region R P and a mark arrangement region R M provided on an outer periphery of the pattern arrangement region R P are provided on the first surface 31 .
- the pattern arrangement region R p is rectangular, and the mark arrangement region R m surrounds the pattern arrangement region R p in a rectangular frame-like manner.
- a pattern, corresponding to a wiring pattern or other device components, to be transferred to the workpiece is formed in the pattern arrangement region R P .
- Marks, particularly alignment marks for aligning the template 1 with the workpiece are disposed in the mark arrangement region R M .
- a second surface 32 of the pedestal portion 3 adheres to the first surface 21 of the template substrate 2 .
- the pedestal portion 3 is formed of resin such as urethane rubber, silicone rubber, or acrylate-based rubber.
- a thickness of the pedestal portion 3 is not limited in particular; however, in some examples, it is preferable that the thickness is approximately 10 ⁇ m to 20 ⁇ m.
- the second surface 32 is smaller (in projected surface area) than the first surface 31 . Accordingly, side surfaces other than the first surface 31 and the second surface 32 of the pedestal portion 3 are angled from the second surface 32 toward the first surface 31 . That is, an angle ⁇ formed between the first surface 31 and a side surface of the pedestal portion 3 is an acute angle (less than 90 degrees). It is noted that the angle ⁇ is more preferably greater than or equal to 30 degrees and is less than or equal to 45 degrees. As such, by configuring the corner portion on the first surface 31 side as an acute angle, the resist is not extruded outward from the first surface 31 , even if the resist reaches a peripheral edge portion of the pedestal portion 3 when the template 1 is pressed against the resist on the workpiece in the imprint processing. That is, it is possible to prevent the resist from flowing along the side surface of the pedestal portion 3 during imprint processing.
- FIGS. 2A and 2B illustrate an example of a configuration of the template according to the first embodiment.
- an outer edge 321 of the second surface 32 moves further towards the center of the pedestal portion 3 .
- a projected position 321 a (a perpendicular line drawn from the outer edge 321 of the second surface 32 towards the first surface 31 ) of the outer edge 321 is within the mark arrangement region R M (or alternatively described as outside the pattern arrangement region R P ).
- FIG. 1 a projected position 321 a (a perpendicular line drawn from the outer edge 321 of the second surface 32 towards the first surface 31 ) of the outer edge 321 is within the mark arrangement region R M (or alternatively described as outside the pattern arrangement region R P ).
- the position 321 a is within the pattern arrangement region R P . That is, for the arrangement depicted FIG. 2A , the full, maximum thickness of pedestal portion 3 is below all portions of the pattern arrangement region R P . However, for the arrangement depicted in FIG. 2B , there is a region 325 in which the full, maximum thickness the pedestal portion 3 is not provided below a portion of the pattern arrangement region R P .
- the “outer edge” refers to an outer perimeter boundary of the second surface 32 at the interface with surface 21 .
- the pedestal portion 3 exists at a uniform thickness below all portions of the pattern arrangement region R P , as illustrated in FIG. 2A . Accordingly, it is preferable that the angle ⁇ of the corner portion on the first surface 31 side be selected such that the position 321 a will be in the mark arrangement region R M and not pattern arrangement region R p .
- FIGS. 3A to 3E illustrate an example of a sequence of the manufacturing method of a template 1 according to the first embodiment.
- the template substrate 2 is prepared.
- the template substrate 2 is formed of, for example, quartz glass in a form of a rectangular flat plate.
- a guide layer 51 is formed on the first surface 21 of the template substrate 2 .
- the guide layer 51 is formed on the first surface 21 of the template substrate 2 so as to have an opening 52 having a rectangular shape in an overhead view, in which a width decreases from an upper surface of the guide layer 51 toward a lower surface (a boundary with the template substrate 2 ) of the guide layer 51 .
- the width indicates, for example, a maximum width of the opening 52 in any direction parallel to first surface 21 .
- Aside surface 52 a forming the opening 52 has a tapered shape.
- the guide layer 51 is a material with etching selectivity different from etching selectivity of an embedded material 34 .
- the guide layer 51 is a material that does not substantially intermix with the embedded material 34 and can be removed by a solvent.
- polystyrene, polyurethane or the like which is a chain polymer material can be used as the guide layer 51 .
- the opening 52 in the guide layer 51 can be formed, for example, by an imprinting process performed on the first surface 21 of the template substrate 2 , using an imprint template (e.g., a different template 1 ) having a rectangular convex pattern which is pressed into a material of the guide layer 51 .
- an imprint template e.g., a different template 1
- the guide layer 51 and opening 52 can be formed by a photolithographic process.
- the angle between the upper surface and the side surface of the guide layer 51 is formed so as to be larger than 90 degrees. That is, the interior angle of the side surface of the guide layer 51 and the first surface 21 of the template substrate 2 is less than 90 degrees.
- the embedded material 34 is disposed in the opening 52 as illustrated in FIG. 3B .
- the embedded material 34 is a thermosetting resin or a photo-curing resin which, as initially applied, is unset/uncured to at least some extent.
- the embedding material 34 is, for example, a resin material that crosslinks such as urethane rubber, silicone rubber, or acrylate-based rubber. In a state depicted in FIG. 3B , the embedded material 34 is not cured and is in a liquid or flowable state.
- an original plate 61 is pressed against the embedded material 34 , and a recess portion 611 of the original plate 61 is filled with the embedded material 34 . Thereafter, heat or light is applied to the embedded material 34 , and thereby, the embedded material 34 is cured. By doing so, the embedded material 34 becomes the pedestal portion 3 .
- the original plate 61 is a template for pattern formation having a pattern of protrusions and recesses formed thereon which is the inverse of the pattern of protrusions and recesses to be formed on template 1 .
- the original plate 61 is formed of, for example, quartz glass and may be referred to as a master template 61 in some contexts.
- the original plate 61 is detached from the pedestal portion 3 .
- the guide layer 51 is removed by wet processing or the like. In the wet processing, a chemical solution or solvent in which the cured embedded material 34 does not dissolve but in which the guide layer 51 does dissolve or otherwise is removed is used. Thereby, the pedestal portion 3 having the uneven pattern 33 is formed on the template substrate 2 , and the template 1 is completed.
- the angle ⁇ between the first surface 31 on which the pattern of the pedestal portion 3 of the template 1 is formed and the side surface is less than 90 degrees.
- the angle ⁇ formed between a side surface and a first surface on which a pattern of a pedestal portion is formed is less than 90 degrees.
- a pattern arrangement region has to be provided within a projected perimeter (outline) of the second surface of the pedestal portion. Accordingly, when the angle ⁇ is reduced, a width of a kerf region has to increase to make an area of the first surface of the pedestal portion to be larger than a shot region.
- a template capable of preventing a resist from seeping from a peripheral edge portion of the pedestal portion while keeping an area of the pedestal portion substantially the same size as the shot region will be described.
- FIG. 4 is a sectional view schematically illustrating an example of a configuration of a template 1 according to the second embodiment.
- a side surface of the pedestal portion 3 is configured to have two distinct portions.
- a first side surface portion 35 a has a surface substantially perpendicular to the first surface 21 , and a second side surface portion 35 b intersects at an angle a less than 90 degrees with respect to the first surface 31 are provided.
- the angle ⁇ between the second side surface portion 35 b and the first surface 31 is less than 90 degrees, as a distance from the first surface 21 increases, a position of an outer edge of the second side surface portion 35 b moves.
- a size (hereinafter, referred to as a height) of the pedestal portion 3 in a thickness direction is constant, the angle ⁇ formed between the first surface 31 and the second side surface portion 35 b can be changed by changing the length of the first side surface portion 35 a. That is, the greater the length of the first side surface portion 35 a is, the smaller the angle a will be, and the shorter the length of the first side surface portion 35 a, the larger the angle ⁇ is.
- a position 35 c, corresponding to the projected outer edge position of the first side surface portion 35 a, is not located in the pattern arrangement region R P provided on the first surface 31 but is located in the mark arrangement region R M . This is because, if the projected position of the outer edge of the first side surface portion 35 a is in the pattern arrangement region R P , it is impossible to uniformly apply a force to each position of the resist in contact with the pattern arrangement region R P , as described in the first embodiment. It is noted that the same configuration elements as the configuration elements of the first embodiment are denoted by the same reference numerals or symbols, and description thereof will be omitted.
- the template 1 of the second embodiment can be manufactured by substantially the same manufacturing method as the manufacturing method described in conjunction with the first embodiment.
- the side surface 52 a of the opening 52 of the guide layer 51 formed on the template substrate 2 would need to be modified from the first embodiment to include a part corresponding to the first side surface portion 35 a and a part corresponding to the second side surface portion 35 b.
- FIG. 5 is a sectional view schematically illustrating another example of the structure of a template 1 according to the second embodiment.
- FIG. 4 a case where the first side surface portion 35 a of the pedestal portion 3 stands perpendicularly to the first surface 21 is illustrated.
- an interior angle ⁇ between the first surface 21 and the first side surface portion 35 a may be less than 90 degrees.
- the position 35 c that is, the position of closest approach to the pattern arrangement region R P
- the outline of the first side surface portion 35 a is the smallest is projected onto the first surface 31 of the pedestal portion 3 exists in the mark arrangement region R M .
- the angle ⁇ formed between the first surface 21 of the template substrate 2 and the first side surface portion 35 a of the pedestal portion 3 may instead be larger than 90 degrees in some embodiments.
- the first side surface portion 35 a may have a surface (R surface) with a curvature (radius of curvature) or may have another surface shape.
- a pattern on template 1 is formed by pressing an original template into an embedded material and curing the embedded material.
- the disclosure is not limited to this.
- another method of manufacturing a template will be described.
- FIGS. 6A to 6D are sectional views illustrating an example of a sequence of a manufacturing method of a template according to the third embodiment.
- a process similar to those described in conjunction with FIGS. 3A and 3B in the first embodiment is performed.
- the embedded material 34 is cured by applying heat or light to the embedded material 34 buried in the opening 52 of the guide layer 51 .
- the guide layer 51 is removed.
- an embedded portion 34 a formed of a resin is formed on the template substrate 2 , as depicted in FIG. 6A .
- the embedded portion 34 a corresponds to a pedestal portion 3 on which the pattern 33 has not been formed.
- an original plate 62 on which a pattern has been formed is coated with a receiver material 36 a.
- the receiver material 36 a is applied onto the original plate 62 by using, for example, a spin coating method.
- the receiver material 36 a is filled into a recess pattern in the original plate 62 .
- the original plate 62 is a template for pattern formation having a pattern on one side.
- the original plate 62 is, for example, a silicon substrate.
- the original plate 62 is not provided with the pedestal portion 3 .
- the receiver material 36 a is, for example, a resin material which crosslinks such as urethane rubber, silicone rubber or acrylate-based rubber. In the state depicted in FIG. 6B , the receiver material 36 a is not cured and is a liquid or flowable material.
- the original plate 62 coated with the receiver material 36 a is disposed so as to face the embedded portion 34 a 1 , and the receiver material 36 a is brought into contact with the embedded portion 34 a.
- heat or light is applied to the receiver material 36 a, and the receiver material 36 a is cured and a transfer portion 36 is formed.
- the transfer portion 36 is bonded to the embedded portion 34 a.
- the template substrate 2 is separated from the original plate 62 . Thereby, the pedestal portion 3 on which the transfer portion 36 is provided is formed. As described above, a template 1 corresponding to that depicted in FIGS. 1A and 1B is completed.
- the template 1 in which the angle ⁇ of the corner portion formed between the first surface 31 and the side surface of the pedestal portion 3 is less than 90 degrees, when the thin transfer portion 36 is discounted. Thereby, the following effect is achieved. That is, it is possible to obtain the template 1 for which the resist will not substantially seep out from the outer periphery portion of the pedestal portion 3 during the template pressing.
- a method of manufacturing a template having a structure in which a transfer portion formed of a patterned resin is provided on a pedestal portion of a template substrate will be described.
- FIG. 7 is a sectional view schematically illustrating an example of a configuration of a template 1 according to the fourth embodiment.
- the template 1 according to the fourth embodiment includes a template substrate 2 a and the transfer portion 36 .
- the template substrate 2 a has a configuration in which a pedestal portion 24 is provided near a central portion of the first surface 21 of a rectangular substrate.
- the pedestal portion 24 has a structure protruding by approximately 10 to 50 ⁇ m with respect of the rest of the template substrate 2 a.
- an angle formed between the side surface and a surface on a side where the transfer portion 36 of the pedestal portion 24 is disposed is not limited to an angle illustrated in FIG. 7 .
- the angle of the pedestal portion 24 may be greater than or equal to, for example, 90 degrees. However, it is also possible to obtain the effect described in the first embodiment by setting the angle of the pedestal portion 24 to be less than 90 degrees.
- the template substrate 2 a is formed of quartz glass or the like.
- the transfer portion 36 has a pattern of protrusions and recesses on the first surface 361 and forms the patterned portion of template 1 .
- the second surface 362 opposite to the first surface 361 adheres onto the pedestal portion 24 of the template substrate 2 a.
- the pattern arrangement region R P of a rectangular shape, and the mark arrangement region R M , of a frame shape surrounding the pattern arrangement region R P , are provided on the first surface 361 .
- a pattern disposed in the pattern arrangement region R P and a mark disposed in the mark arrangement region R M are substantially the same as the pattern and the mark described in conjunction with the first embodiment.
- the transfer portion 36 is formed of a flowable material including a reactive group for purposes of curing/hardening the material.
- the material may be a photo-initiated radical polymerizable material including at least one reactive group selected from an acryloyl group, a methacryloyl group, or a vinyl ether group, or a photo-initiated cationic polymerizable material including at least one reactive group selected from an epoxy group or an oxetanyl group is exemplified as a reactive group for curing.
- FIGS. 8A to 8D are cross-sectional views schematically illustrating an example of a sequence for a manufacturing a template 1 according to the fourth embodiment.
- an original plate 62 having a pattern etched therein corresponding to that to be formed on the template 1 is prepared.
- the original plate 62 is provided with a plurality of recess portions 62 a.
- the original plate 62 is, for example, a silicon substrate.
- a receiver material 36 a that is a liquid is formed on the original plate by using a spin coating method.
- the receiver material 36 a is filled in the recess portions 62 a and a thickness of the receiver material 36 a above the pattern formation surface of the original plate is substantially uniformized.
- a photo-curing resin or the like can be used as the receiver material 36 a.
- the template substrate 2 a is disposed such that the pedestal portion 24 faces the receiver material 36 a on the original plate 62 .
- the template substrate 2 a is formed of quartz glass or the like and is provided with the pedestal portion 24 having a height of approximately 10 to 50 ⁇ m positioned near a central portion of the first surface 21 .
- the template substrate 2 a is brought into contact with the receiver material 36 a. Thereafter, the receiver material 36 a in contact with the pedestal portion 24 is irradiated with ultraviolet rays. Thereby, the receiver material 36 a in the region irradiated with the ultraviolet rays is cured to form the solidified, cured transfer portion 36 , but the receiver material 36 a in the regions not irradiated with the ultraviolet rays remains in a liquid, uncured form.
- the template substrate 2 a is separated from the original plate 62 .
- the transfer portion 36 (cured receiver material 36 a ) is peeled from the original plate 62 and the uncured receiver material 36 a remains on the original plate 62 .
- the internal breaking strength (modulus) of the transfer portion 36 is preferable to be greater than or equal to 1.2 ⁇ 10 ⁇ 4 GPa. This is because, when the template 1 is peeled from the resist in the imprint processing, the transfer portion 36 might be broken unless the transfer portion has a breaking stress greater than or equal to 1.2 ⁇ 10 ⁇ 4 GPa.
- FIGS. 9A to 9D are cross-sectional views schematically illustrating an example of a sequence of a method of manufacturing a semiconductor device using a template 1 according to the fourth embodiment.
- a resist 71 is dispense onto a particular die or shot region of a workpiece 70 .
- the resist 71 is, for example, a photo-curing resin.
- the resist 71 is dispensed onto the workpiece 70 by using, for example, an inkjet method.
- the resist 71 may be entirely coated over the workpiece 70 by using the spin coating method.
- the workpiece 70 is a semiconductor substrate such as a silicon substrate, a semiconductor film formed over a semiconductor substrate, a conductive film, or an insulating film.
- rough positioning coarse alignment
- the template 1 and the workpiece 70 is moved until the transfer portion 36 comes into contact with the resist 71 . Then, more precise positioning (fine alignment) between the template 1 and the workpiece 70 is performed. After the resist 71 is filled in recess portions of the template 1 , the resist 71 is irradiated with ultraviolet rays to cure the resist 71 . Thereby, a resist pattern 71 a is formed.
- the template 1 is separated from the resist pattern 71 a. Thereafter, the workpiece 70 is processed by using anisotropic etching, such as reactive ion etching (RIE), using the resist pattern 71 a as a mask. By repeating this processing, the workpiece 70 can be processed to have a desired pattern, and a semiconductor device having the desired pattern is thereby manufactured.
- anisotropic etching such as reactive ion etching (RIE)
- the pattern of the transfer portion 36 might eventually be damaged as illustrated in FIG. 9D .
- the imprint processing is performed by using a damaged template 1 (see FIG. 9D )
- the intended resist pattern 71 a is no longer able to be formed on the workpiece 70 .
- the damaged transfer portion 36 must be removed and a new transfer portion 36 formed on the pedestal portion 24 of the template substrate 2 a, and thereby, the template 1 can be more easily reproduced or repaired.
- FIGS. 10A and 10B are cross-sectional views schematically illustrating an example of a sequence for repairing the template 1 according to the fourth embodiment.
- the damaged transfer portion 36 of the template 1 is peeled or otherwise removed by a cleaning process.
- a sulfuric acid hydrogen peroxide solution (sometimes referred to as piranha etch) can be used as a cleaning solution, but the cleaning solution may be appropriately changed depending on the material of the transfer portion 36 .
- the template substrate 2 a in which an upper portion of the pedestal portion 24 has been cleaned is obtained as illustrated in FIG. 10B .
- the template 1 is reproduced by forming a new transfer portion 36 on the pedestal portion 24 of the template substrate 2 a.
- the remade template 1 can then be used for manufacturing semiconductor devices as illustrated in FIGS. 9A to 9D .
- imprint processing is performed by using the template 1 in which the resin transfer portion 36 having a pattern adheres onto the pedestal portion 24 .
- the transfer portion 36 can be removed and a new transfer portion 36 can be formed on the pedestal portion 24 .
- the template 1 can be re-manufactured at a low cost, compared to the manufacturing cost of a quartz glass template since generally, the template substrate 2 a is not damaged and can thus be reused after only a relatively simple cleaning process.
- the receiver material 36 a in contact with the template substrate 2 a is cured. Accordingly, a film thickness of the transfer portion 36 formed on the pedestal portion 24 of the template substrate 2 a can be substantially uniformized.
- FIG. 11 is a sectional view schematically illustrating an example of a template according to the fifth embodiment.
- the template 1 further includes an adhesion layer 5 between the template substrate 2 a and the transfer portion 36 .
- a material having an adhesion strength towards the transfer portion 36 that is larger than the adhesion strength between the transfer portion 36 and the original plate 62 is used as the adhesion layer 5 .
- the adhesion layer 5 can provide improved adhesion strength by incorporating a material providing hydrogen bonding to the relevant surfaces/materials and/or covalent bonding linkages between the template substrate 2 a and the transfer portion 36 .
- adhesion layer 5 is formed of a material having a reactive group that bonds with the transfer portion 36 and a reactive group bonds with the template substrate 2 a.
- the transfer portion 36 also requires a reactive group for curing.
- the photo radical polymerizable group may also be the reactive group for bonding with the transfer portion 36 .
- the material containing a photo radical polymerizable group contains at least one reactive group selected from an acryloyl group, a methacryloyl group, and a vinyl ether group.
- the photo cationic polymerizable group may also be the reactive group for bonding with the transfer portion 36 .
- the material containing a photo cationic polymerizable group contains at least one reactive group selected from an epoxy group and an oxetanyl group.
- a silane coupling agent can be used as a reactive group for bonding with the template substrate 2 a.
- Monoalkoxysilanes, dialkoxysilanes, trialkoxysilanes, monochlorosilanes, dichlorosilanes, trichlorosilanes, and the like can be used as the silane coupling agent.
- a silane coupling agent also containing a photo radical polymerizable group a silane coupling agent also containing a photo cationic polymerizable group, or the like can be used as the adhesion layer 5 .
- FIG. 12 is a diagram schematically illustrating a role of the adhesion layer in the template 1 according to the fifth embodiment.
- a case where 3 -(trimethoxysilyl)propyl acrylate is used as the adhesion layer 5 is taken as an example.
- a trimethoxysilyl group of the adhesion layer 5 bonds to the template substrate 2 a formed of quartz glass by a silane coupling reaction.
- the acryloyl group of the adhesion layer 5 bonds to the transfer portion 36 in the photo polymerization reaction used for curing of the transfer portion 36 .
- the adhesion layer 5 can make the template substrate 2 a more firmly adhere to the transfer portion 36 .
- the epoxy group bonds to the transfer portion 36 by a photo cationic polymerization reaction during curing of the transfer portion 36 .
- FIGS. 13A to 13E are cross-sectional view schematically illustrating an example of a sequence of a manufacturing method of a template 1 according to the fifth embodiment.
- the adhesion layer 5 and the receiver material 36 a are configured with a material containing a photo radical polymerizable group will be described as an example.
- the adhesion layer 5 is formed on the pedestal portion 24 of the template substrate 2 a by using a film formation method such as a vapor deposition method.
- a film formation method such as a vapor deposition method.
- 3-(trimethoxysilyl)propyl acrylate is used for the adhesion layer 5 , the trimethoxysilyl group bonds to the template substrate 2 a, which is formed of quartz glass, through a silane coupling reaction during the vapor deposition process, and thereby, the adhesion layer 5 is formed.
- the original plate 62 is prepared, and the receiver material 36 a is formed on the entire surface of the original plate 62 by using the spin coating method.
- the template substrate 2 a is disposed such that the pedestal portion 24 faces the receiver material 36 a on the original plate 62 .
- the template substrate 2 a and the receiver material 36 a are brought into contact.
- the receiver material 36 a is brought into direct contact with the adhesion layer 5 formed on the pedestal portion 24 instead of the pedestal portion 24 .
- the template substrate 2 a and the original plate 62 are disposed in an atmosphere in which the curing reaction is inhibited. That is, in a case where the receiver material 36 a containing a photo radical polymerizable group is used, the atmosphere contains oxygen.
- a region including the pedestal portion 24 is irradiated with ultraviolet rays.
- the adhesion layer 5 and the receiver material 36 a are bonded to each other by the photo radical polymerization reaction and are cured in the irradiated region where the adhesion layer 5 and the receiver material 36 a are in contact with each other.
- the receiver material 36 a becomes the transfer portion 36 . It is preferable that only a region corresponding to the pedestal portion 24 is irradiated with ultraviolet rays, but generally a wider region than the region exactly corresponding to the pedestal portion 24 will usually be irradiated with the ultraviolet rays.
- the pedestal portion 24 protrudes from the first surface 21 of the template substrate 2 a, a periphery of the pedestal portion 24 is filled in an atmosphere containing oxygen.
- an oxygen rich atmosphere a photo radical polymerizable curing reaction will not substantially progress and the receiver material 36 a exposed to the oxygen rich atmosphere during irradiation is hardly solidified, and thus, even if some periphery of the pedestal portion 24 is irradiated with ultraviolet rays, the receiver material 36 a disposed beyond the pedestal portion 254 will not be substantially cured and therefor remains in a liquid form in those regions which are not in direct contact with the adhesion layer 5 .
- the template substrate 2 a is separated from the original plate 62 .
- the transfer portion 36 is peeled not from the template substrate 2 a but from a boundary with the original plate 62 without being broken.
- the breaking stress of the transfer portion 36 in the region corresponding to the pedestal portion 24 is larger than the breaking stress of the receiver material 36 a in the regions other than the region corresponding to the pedestal portion 24 . Accordingly, when being separated, the transfer portion 36 is cleanly peeled at a boundary between the region corresponding to the pedestal portion 24 and the other regions.
- the adhesion layer 5 and the receiver material 36 a can be configured with a material containing a photo cationic polymerizable group.
- the photo cationic polymerization curing reaction will be inhibited (similarly to inhibition of the radical polymerization curing reaction by the presence of oxygen).
- the template substrate 2 a and the original plate 62 are disposed in an atmosphere containing water vapor before the ultraviolet rays are applied in FIG. 13D .
- the adhesion layer 5 and the receiver material 36 a are bonded to each other and cured by photo cationic polymerization reaction in the region where the adhesion layer 5 and the receiver material 36 a are in contact with each other.
- the receiver material 36 a is not cured due to inhibition by water vapor and thus remains in a liquid form.
- FIG. 14 is a cross-sectional view schematically illustrating an example of a template manufactured by using the method described in the fourth embodiment.
- the transfer portion 36 is provided on the pedestal portion 24 of the template substrate 2 a; however, a peripheral edge portion of the transfer portion 36 in contact with the pedestal portion 24 may occasionally be formed having an unintended, irregular shape.
- a portion 363 of the peripheral edge portion of the transfer portion 36 may protrude more in a lateral direction than an outer edge of the pedestal portion 24 . If the imprint processing is performed by using such a template, there is a possibility that the portion protruding in the lateral direction would interfere with a resist pattern formed or to be formed in an adjacent shot or die region.
- the same problem may occur with the fifth embodiment.
- a method of manufacturing a template that can prevent such a problem from occurring will be described.
- FIGS. 15A and 15B are cross-sectional views schematically illustrating an example of a sequence of a template manufacturing method according to the sixth embodiment.
- FIG. 15A illustrates the template 1 after separation from the original plate 62 as in FIG. 8D .
- the transfer portion 36 includes a convex portion (convex pattern) 365 and a residual film portion 366 having a substantially uniform thickness on the pedestal portion 24 of the template substrate 2 a.
- a recess portion is a region surrounded by or between the convex portion 365 .
- a peripheral edge portion of the residual film portion 366 may occasionally protrude outside of the pedestal portion 24 .
- an etch-back process is performed by anisotropic dry etching, such as a RIE method, until exposed portions of the residual film portion 366 are removed.
- the receiver material 36 a is cured, the template substrate 2 a is separated from the original plate 62 , and thereafter, the exposed portions of the residual film portion 366 can be removed by anisotropic etching. By doing so, it is possible to prevent the peripheral edge portion of the residual film portion 366 from protruding in the lateral direction and interfering with a resist pattern formed or to be formed in the adjacent regions.
Abstract
According to one embodiment, a template for imprint patterning processes comprises a template substrate having a first surface and a pedestal on the first surface of the template substrate, the pedestal having a second surface spaced from the first surface in a first direction perpendicular to the first surface. A pattern is disposed on the second surface. The pedestal has a sidewall between the first surface and the second surface that is at an angle of less than 90° to the second surface.
Description
- This application is a continuation of U.S. patent application Ser. No. 16/116,402, filed on Aug. 29, 2018, which is based upon and claims the benefit of priority from Japanese Patent Application No. 2018-033833, filed on Feb. 27, 2018, the entire contents of each of which are incorporated herein by reference.
- Embodiments described herein relate generally to a template, a template manufacturing method, and a semiconductor device manufacturing method.
- In the related art, when a template is pressed against a resist material on a workpiece during imprint lithography processing, the resist material seeps out from a periphery of a pedestal portion of the template on which the imprint pattern is disposed.
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FIGS. 1A and 1B are views schematically illustrating a template according to a first embodiment. -
FIGS. 2A and 2B are cross-sectional views illustrating additional aspects of the template according to a first embodiment. -
FIGS. 3A to 3E illustrate aspects of a sequence of a manufacturing method of a template according to a first embodiment. -
FIG. 4 is a cross-sectional view schematically illustrating one example of a template according to a second embodiment. -
FIG. 5 is a cross-sectional view schematically illustrating another example of a template according to a second embodiment. -
FIGS. 6A to 6D illustrate aspects of a sequence of a manufacturing method of a template according to a third embodiment. -
FIG. 7 is a cross-sectional view schematically illustrating an example of a template according to a fourth embodiment. -
FIGS. 8A to 8D illustrate aspects of a sequence of a manufacturing method of a template according to a fourth embodiment. -
FIGS. 9A to 9D illustrate aspects of a sequence of a semiconductor device manufacturing method including a template according to a fourth embodiment. -
FIGS. 10A and 10B are cross-sectional views schematically illustrating a reproduction sequence of a template according to a fourth embodiment. -
FIG. 11 is a cross-sectional view schematically illustrating a template according to a fifth embodiment. -
FIG. 12 is a diagram schematically illustrating aspects related to an adhesion layer and a template according to a fifth embodiment. -
FIGS. 13A to 13E illustrate aspects of a sequence of a manufacturing method of a template according to a fifth embodiment. -
FIG. 14 is a cross-sectional view schematically illustrating a template manufactured by a method described in conjunction with a fourth embodiment. -
FIGS. 15A and 15B are cross-sectional views schematically illustrating aspects of a sequence of a manufacturing method of a template according to a sixth embodiment. - Embodiments provide an imprint template, an imprint template manufacturing method, and a semiconductor device manufacturing method using an imprint template which can prevent a resist from seeping out from a periphery of a pedestal portion of the template during the imprint processing.
- In general, according to one embodiment, a template for imprint patterning processes comprises a template substrate having a first surface and a pedestal on the first surface of the template substrate. The pedestal has a second surface spaced from the first surface of the template substrate in a first direction perpendicular (normal) to the first surface. A pattern is disposed on the second surface. The pedestal has a sidewall between the first surface and the second surface that is at an angle of less than 90° to the second surface.
- A template, a template manufacturing method, and a semiconductor device manufacturing method according to example embodiments will be hereinafter described in detail with reference to the accompanying drawings. It is noted that the present disclosure is not limited by these example embodiments.
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FIGS. 1A and 1B are views schematically illustrating an example configuration of a template according to a first embodiment.FIG. 1A is a top view, andFIG. 1B is a cross-sectional view taken along a line A-A ofFIG. 1A . Atemplate 1 includes arectangular template substrate 2 and apedestal portion 3 provided on (or approximately so) a central portion of afirst surface 21 oftemplate substrate 2. - The
template substrate 2 has, for example, a generally rectangular flat plate structure. Thetemplate substrate 2 is formed of quartz glass or the like. - The
pedestal portion 3 has a quadrangular pyramidal structure. Anuneven pattern 33 that is to be brought into contact with a resist on a workpiece during the imprint processing is provided on afirst surface 31 of thepedestal portion 3. A pattern arrangement region RP and a mark arrangement region RM provided on an outer periphery of the pattern arrangement region RP are provided on thefirst surface 31. InFIG. 1A , the pattern arrangement region Rp is rectangular, and the mark arrangement region Rm surrounds the pattern arrangement region Rp in a rectangular frame-like manner. A pattern, corresponding to a wiring pattern or other device components, to be transferred to the workpiece is formed in the pattern arrangement region RP. Marks, particularly alignment marks for aligning thetemplate 1 with the workpiece are disposed in the mark arrangement region RM. - A
second surface 32 of thepedestal portion 3 adheres to thefirst surface 21 of thetemplate substrate 2. Thepedestal portion 3 is formed of resin such as urethane rubber, silicone rubber, or acrylate-based rubber. In addition, a thickness of thepedestal portion 3 is not limited in particular; however, in some examples, it is preferable that the thickness is approximately 10 μm to 20 μm. - The
second surface 32 is smaller (in projected surface area) than thefirst surface 31. Accordingly, side surfaces other than thefirst surface 31 and thesecond surface 32 of thepedestal portion 3 are angled from thesecond surface 32 toward thefirst surface 31. That is, an angle α formed between thefirst surface 31 and a side surface of thepedestal portion 3 is an acute angle (less than 90 degrees). It is noted that the angle α is more preferably greater than or equal to 30 degrees and is less than or equal to 45 degrees. As such, by configuring the corner portion on thefirst surface 31 side as an acute angle, the resist is not extruded outward from thefirst surface 31, even if the resist reaches a peripheral edge portion of thepedestal portion 3 when thetemplate 1 is pressed against the resist on the workpiece in the imprint processing. That is, it is possible to prevent the resist from flowing along the side surface of thepedestal portion 3 during imprint processing. -
FIGS. 2A and 2B illustrate an example of a configuration of the template according to the first embodiment. The more acute the angle α of the corner portion on thefirst surface 31 side is, the more the resist can be prevented from being extruded to the side surface of thepedestal portion 3. However, as the angle a of the corner portion is reduced, anouter edge 321 of thesecond surface 32 moves further towards the center of thepedestal portion 3. InFIG. 2A , a projectedposition 321 a (a perpendicular line drawn from theouter edge 321 of thesecond surface 32 towards the first surface 31) of theouter edge 321 is within the mark arrangement region RM (or alternatively described as outside the pattern arrangement region RP). However, inFIG. 2B , theposition 321 a is within the pattern arrangement region RP. That is, for the arrangement depictedFIG. 2A , the full, maximum thickness ofpedestal portion 3 is below all portions of the pattern arrangement region RP. However, for the arrangement depicted inFIG. 2B , there is aregion 325 in which the full, maximum thickness thepedestal portion 3 is not provided below a portion of the pattern arrangement region RP. Here, the “outer edge” refers to an outer perimeter boundary of thesecond surface 32 at the interface withsurface 21. - In the imprint processing, it is preferable that force is applied as uniformly as possible in places where the template pattern exists. Accordingly, for the case illustrated in
FIG. 2A , a more uniform force is applied to the resist contacting the pattern arrangement region RP as compared to the case illustrated inFIG. 2B , in which theregion 325 is present below a portion of the pattern arrangement region RP and the force applied to the resist by thetemplate 1 may be different at a position corresponding to theregion 325. - Therefore, it is preferable that the
pedestal portion 3 exists at a uniform thickness below all portions of the pattern arrangement region RP, as illustrated inFIG. 2A . Accordingly, it is preferable that the angle α of the corner portion on thefirst surface 31 side be selected such that theposition 321 a will be in the mark arrangement region RM and not pattern arrangement region Rp. - Next, a method of manufacturing the
template 1 will be described.FIGS. 3A to 3E illustrate an example of a sequence of the manufacturing method of atemplate 1 according to the first embodiment. First, as illustrated inFIG. 3A , thetemplate substrate 2 is prepared. Thetemplate substrate 2 is formed of, for example, quartz glass in a form of a rectangular flat plate. Subsequently, aguide layer 51 is formed on thefirst surface 21 of thetemplate substrate 2. Theguide layer 51 is formed on thefirst surface 21 of thetemplate substrate 2 so as to have anopening 52 having a rectangular shape in an overhead view, in which a width decreases from an upper surface of theguide layer 51 toward a lower surface (a boundary with the template substrate 2) of theguide layer 51. Here, the width indicates, for example, a maximum width of theopening 52 in any direction parallel tofirst surface 21. Aside surface 52 a forming theopening 52 has a tapered shape. Theguide layer 51 is a material with etching selectivity different from etching selectivity of an embeddedmaterial 34. In addition, it is preferable that theguide layer 51 is a material that does not substantially intermix with the embeddedmaterial 34 and can be removed by a solvent. For example, polystyrene, polyurethane or the like which is a chain polymer material can be used as theguide layer 51. - The
opening 52 in theguide layer 51 can be formed, for example, by an imprinting process performed on thefirst surface 21 of thetemplate substrate 2, using an imprint template (e.g., a different template 1) having a rectangular convex pattern which is pressed into a material of theguide layer 51. Alternatively, theguide layer 51 andopening 52 can be formed by a photolithographic process. At this time, the angle between the upper surface and the side surface of theguide layer 51 is formed so as to be larger than 90 degrees. That is, the interior angle of the side surface of theguide layer 51 and thefirst surface 21 of thetemplate substrate 2 is less than 90 degrees. - Thereafter, the embedded
material 34 is disposed in theopening 52 as illustrated inFIG. 3B . The embeddedmaterial 34 is a thermosetting resin or a photo-curing resin which, as initially applied, is unset/uncured to at least some extent. The embeddingmaterial 34 is, for example, a resin material that crosslinks such as urethane rubber, silicone rubber, or acrylate-based rubber. In a state depicted inFIG. 3B , the embeddedmaterial 34 is not cured and is in a liquid or flowable state. - Next, as illustrated in
FIG. 3C , anoriginal plate 61 is pressed against the embeddedmaterial 34, and arecess portion 611 of theoriginal plate 61 is filled with the embeddedmaterial 34. Thereafter, heat or light is applied to the embeddedmaterial 34, and thereby, the embeddedmaterial 34 is cured. By doing so, the embeddedmaterial 34 becomes thepedestal portion 3. Theoriginal plate 61 is a template for pattern formation having a pattern of protrusions and recesses formed thereon which is the inverse of the pattern of protrusions and recesses to be formed ontemplate 1. Theoriginal plate 61 is formed of, for example, quartz glass and may be referred to as amaster template 61 in some contexts. - Next, as illustrated in
FIG. 3D , theoriginal plate 61 is detached from thepedestal portion 3. Furthermore, as illustrated inFIG. 3E , theguide layer 51 is removed by wet processing or the like. In the wet processing, a chemical solution or solvent in which the cured embeddedmaterial 34 does not dissolve but in which theguide layer 51 does dissolve or otherwise is removed is used. Thereby, thepedestal portion 3 having theuneven pattern 33 is formed on thetemplate substrate 2, and thetemplate 1 is completed. - In the first embodiment, the angle α between the
first surface 31 on which the pattern of thepedestal portion 3 of thetemplate 1 is formed and the side surface is less than 90 degrees. As a result, when thetemplate 1 is pressed against the resist on the workpiece, it is possible to prevent or limit the resist from seeping out from the peripheral edge portion of thepedestal portion 3 and then flowing along the side surface of thepedestal portion 3. As a result, a height of the resist seeping out to the side surface of thepedestal portion 3 can be less than, for example, 100 nm. In addition, defect in a shot region formed when the next shot region is pressed can be reduced by the cured resist. - In the first embodiment, the angle α formed between a side surface and a first surface on which a pattern of a pedestal portion is formed is less than 90 degrees. As the angle α decreases, resist can be prevented from seeping out to the side surface of the
template 1, but in a structure of the first embodiment, as described with reference toFIG. 2B , a pattern arrangement region has to be provided within a projected perimeter (outline) of the second surface of the pedestal portion. Accordingly, when the angle α is reduced, a width of a kerf region has to increase to make an area of the first surface of the pedestal portion to be larger than a shot region. In the second embodiment, a template capable of preventing a resist from seeping from a peripheral edge portion of the pedestal portion while keeping an area of the pedestal portion substantially the same size as the shot region will be described. -
FIG. 4 is a sectional view schematically illustrating an example of a configuration of atemplate 1 according to the second embodiment. In the second embodiment, a side surface of thepedestal portion 3 is configured to have two distinct portions. A firstside surface portion 35 a has a surface substantially perpendicular to thefirst surface 21, and a secondside surface portion 35 b intersects at an angle a less than 90 degrees with respect to thefirst surface 31 are provided. - Since the angle α between the second
side surface portion 35 b and thefirst surface 31 is less than 90 degrees, as a distance from thefirst surface 21 increases, a position of an outer edge of the secondside surface portion 35 b moves. In addition, if a size (hereinafter, referred to as a height) of thepedestal portion 3 in a thickness direction is constant, the angle α formed between thefirst surface 31 and the secondside surface portion 35 b can be changed by changing the length of the firstside surface portion 35 a. That is, the greater the length of the firstside surface portion 35 a is, the smaller the angle a will be, and the shorter the length of the firstside surface portion 35 a, the larger the angle α is. - A
position 35 c, corresponding to the projected outer edge position of the firstside surface portion 35 a, is not located in the pattern arrangement region RP provided on thefirst surface 31 but is located in the mark arrangement region RM. This is because, if the projected position of the outer edge of the firstside surface portion 35 a is in the pattern arrangement region RP, it is impossible to uniformly apply a force to each position of the resist in contact with the pattern arrangement region RP, as described in the first embodiment. It is noted that the same configuration elements as the configuration elements of the first embodiment are denoted by the same reference numerals or symbols, and description thereof will be omitted. - The
template 1 of the second embodiment can be manufactured by substantially the same manufacturing method as the manufacturing method described in conjunction with the first embodiment. However, theside surface 52 a of theopening 52 of theguide layer 51 formed on the template substrate 2 (seeFIG. 3A ) would need to be modified from the first embodiment to include a part corresponding to the firstside surface portion 35 a and a part corresponding to the secondside surface portion 35 b. -
FIG. 5 is a sectional view schematically illustrating another example of the structure of atemplate 1 according to the second embodiment. InFIG. 4 , a case where the firstside surface portion 35 a of thepedestal portion 3 stands perpendicularly to thefirst surface 21 is illustrated. However, as illustrated inFIG. 5 , an interior angle β between thefirst surface 21 and the firstside surface portion 35 a may be less than 90 degrees. However, theposition 35 c (that is, the position of closest approach to the pattern arrangement region RP) where the outline of the firstside surface portion 35 a is the smallest is projected onto thefirst surface 31 of thepedestal portion 3 exists in the mark arrangement region RM. In addition, while not specifically illustrated, the angle β formed between thefirst surface 21 of thetemplate substrate 2 and the firstside surface portion 35 a of thepedestal portion 3 may instead be larger than 90 degrees in some embodiments. Furthermore, the firstside surface portion 35 a may have a surface (R surface) with a curvature (radius of curvature) or may have another surface shape. - According to the second embodiment, substantially the same effects as the first embodiment can be obtained.
- In the first embodiment, a pattern on
template 1 is formed by pressing an original template into an embedded material and curing the embedded material. However, the disclosure is not limited to this. In the third embodiment, another method of manufacturing a template will be described. -
FIGS. 6A to 6D are sectional views illustrating an example of a sequence of a manufacturing method of a template according to the third embodiment. As an initial step a process similar to those described in conjunction withFIGS. 3A and 3B in the first embodiment is performed. As such, the embeddedmaterial 34 is cured by applying heat or light to the embeddedmaterial 34 buried in theopening 52 of theguide layer 51. Then, theguide layer 51 is removed. By doing so, an embeddedportion 34 a formed of a resin is formed on thetemplate substrate 2, as depicted inFIG. 6A . The embeddedportion 34 a corresponds to apedestal portion 3 on which thepattern 33 has not been formed. - Next, as illustrated in
FIG. 6B , anoriginal plate 62 on which a pattern has been formed is coated with areceiver material 36 a. Thereceiver material 36 a is applied onto theoriginal plate 62 by using, for example, a spin coating method. Thereceiver material 36 a is filled into a recess pattern in theoriginal plate 62. Theoriginal plate 62 is a template for pattern formation having a pattern on one side. Theoriginal plate 62 is, for example, a silicon substrate. Unlike theoriginal plate 61 described inFIGS. 3A to 3E , theoriginal plate 62 is not provided with thepedestal portion 3. Thereceiver material 36 a is, for example, a resin material which crosslinks such as urethane rubber, silicone rubber or acrylate-based rubber. In the state depicted inFIG. 6B , thereceiver material 36 a is not cured and is a liquid or flowable material. - Thereafter, as illustrated in
FIG. 6C , theoriginal plate 62 coated with thereceiver material 36 a is disposed so as to face the embedded portion 34a1, and thereceiver material 36 a is brought into contact with the embeddedportion 34 a. In this state, heat or light is applied to thereceiver material 36 a, and thereceiver material 36 a is cured and atransfer portion 36 is formed. Thetransfer portion 36 is bonded to the embeddedportion 34 a. - Next, as illustrated in
FIG. 6D , thetemplate substrate 2 is separated from theoriginal plate 62. Thereby, thepedestal portion 3 on which thetransfer portion 36 is provided is formed. As described above, atemplate 1 corresponding to that depicted inFIGS. 1A and 1B is completed. - In the third embodiment, it is possible to manufacture the
template 1 in which the angle α of the corner portion formed between thefirst surface 31 and the side surface of thepedestal portion 3 is less than 90 degrees, when thethin transfer portion 36 is discounted. Thereby, the following effect is achieved. That is, it is possible to obtain thetemplate 1 for which the resist will not substantially seep out from the outer periphery portion of thepedestal portion 3 during the template pressing. - In a fourth embodiment, a method of manufacturing a template having a structure in which a transfer portion formed of a patterned resin is provided on a pedestal portion of a template substrate, will be described.
-
FIG. 7 is a sectional view schematically illustrating an example of a configuration of atemplate 1 according to the fourth embodiment. Thetemplate 1 according to the fourth embodiment includes atemplate substrate 2 a and thetransfer portion 36. Thetemplate substrate 2 a has a configuration in which apedestal portion 24 is provided near a central portion of thefirst surface 21 of a rectangular substrate. Thepedestal portion 24 has a structure protruding by approximately 10 to 50 μm with respect of the rest of thetemplate substrate 2 a. In performing this process, an angle formed between the side surface and a surface on a side where thetransfer portion 36 of thepedestal portion 24 is disposed is not limited to an angle illustrated inFIG. 7 . The angle of thepedestal portion 24 may be greater than or equal to, for example, 90 degrees. However, it is also possible to obtain the effect described in the first embodiment by setting the angle of thepedestal portion 24 to be less than 90 degrees. Thetemplate substrate 2 a is formed of quartz glass or the like. - The
transfer portion 36 has a pattern of protrusions and recesses on thefirst surface 361 and forms the patterned portion oftemplate 1. Thesecond surface 362 opposite to thefirst surface 361 adheres onto thepedestal portion 24 of thetemplate substrate 2 a. As illustrated inFIG. 1A , the pattern arrangement region RP, of a rectangular shape, and the mark arrangement region RM, of a frame shape surrounding the pattern arrangement region RP, are provided on thefirst surface 361. A pattern disposed in the pattern arrangement region RP and a mark disposed in the mark arrangement region RM are substantially the same as the pattern and the mark described in conjunction with the first embodiment. Thetransfer portion 36 is formed of a flowable material including a reactive group for purposes of curing/hardening the material. The material may be a photo-initiated radical polymerizable material including at least one reactive group selected from an acryloyl group, a methacryloyl group, or a vinyl ether group, or a photo-initiated cationic polymerizable material including at least one reactive group selected from an epoxy group or an oxetanyl group is exemplified as a reactive group for curing. -
FIGS. 8A to 8D are cross-sectional views schematically illustrating an example of a sequence for a manufacturing atemplate 1 according to the fourth embodiment. First, as illustrated inFIG. 8A , anoriginal plate 62 having a pattern etched therein corresponding to that to be formed on thetemplate 1 is prepared. Theoriginal plate 62 is provided with a plurality ofrecess portions 62 a. Theoriginal plate 62 is, for example, a silicon substrate. - Next, as illustrated in
FIG. 8B , areceiver material 36 a that is a liquid is formed on the original plate by using a spin coating method. Thereceiver material 36 a is filled in therecess portions 62 a and a thickness of thereceiver material 36 a above the pattern formation surface of the original plate is substantially uniformized. A photo-curing resin or the like can be used as thereceiver material 36a. - Thereafter, the
template substrate 2 a is disposed such that thepedestal portion 24 faces thereceiver material 36 a on theoriginal plate 62. Thetemplate substrate 2 a is formed of quartz glass or the like and is provided with thepedestal portion 24 having a height of approximately 10 to 50 μm positioned near a central portion of thefirst surface 21. - Next, as illustrated in
FIG. 8C , thetemplate substrate 2 a is brought into contact with thereceiver material 36a. Thereafter, thereceiver material 36 a in contact with thepedestal portion 24 is irradiated with ultraviolet rays. Thereby, thereceiver material 36 a in the region irradiated with the ultraviolet rays is cured to form the solidified, curedtransfer portion 36, but thereceiver material 36 a in the regions not irradiated with the ultraviolet rays remains in a liquid, uncured form. - Next, as illustrated in
FIG. 8D , thetemplate substrate 2 a is separated from theoriginal plate 62. The transfer portion 36 (curedreceiver material 36 a) is peeled from theoriginal plate 62 and theuncured receiver material 36 a remains on theoriginal plate 62. It is noted that the internal breaking strength (modulus) of thetransfer portion 36 is preferable to be greater than or equal to 1.2×10−4 GPa. This is because, when thetemplate 1 is peeled from the resist in the imprint processing, thetransfer portion 36 might be broken unless the transfer portion has a breaking stress greater than or equal to 1.2×10−4 GPa. -
FIGS. 9A to 9D are cross-sectional views schematically illustrating an example of a sequence of a method of manufacturing a semiconductor device using atemplate 1 according to the fourth embodiment. First, as illustrated inFIG. 9A , a resist 71 is dispense onto a particular die or shot region of aworkpiece 70. The resist 71 is, for example, a photo-curing resin. The resist 71 is dispensed onto theworkpiece 70 by using, for example, an inkjet method. Alternatively, the resist 71 may be entirely coated over theworkpiece 70 by using the spin coating method. Theworkpiece 70 is a semiconductor substrate such as a silicon substrate, a semiconductor film formed over a semiconductor substrate, a conductive film, or an insulating film. Next, in a state where thetransfer portion 36 of thetemplate 1 faces theworkpiece 70, rough positioning (coarse alignment) between thetemplate 1 and theworkpiece 70 is performed. - Thereafter, as illustrated in
FIG. 9B , at least one of thetemplate 1 and theworkpiece 70 is moved until thetransfer portion 36 comes into contact with the resist 71. Then, more precise positioning (fine alignment) between thetemplate 1 and theworkpiece 70 is performed. After the resist 71 is filled in recess portions of thetemplate 1, the resist 71 is irradiated with ultraviolet rays to cure the resist 71. Thereby, a resistpattern 71 a is formed. - Next, as illustrated in
FIG. 9C , thetemplate 1 is separated from the resistpattern 71 a. Thereafter, theworkpiece 70 is processed by using anisotropic etching, such as reactive ion etching (RIE), using the resistpattern 71 a as a mask. By repeating this processing, theworkpiece 70 can be processed to have a desired pattern, and a semiconductor device having the desired pattern is thereby manufactured. - Here, if a processing is repeated in which the
template 1 is pressed against the resist 71 on theworkpiece 70 many times and the resist 71 is separated from the resistpattern 71 a after being cured, the pattern of thetransfer portion 36 might eventually be damaged as illustrated inFIG. 9D . If the imprint processing is performed by using a damaged template 1 (seeFIG. 9D ), the intended resistpattern 71 a is no longer able to be formed on theworkpiece 70. In such a case, the damagedtransfer portion 36 must be removed and anew transfer portion 36 formed on thepedestal portion 24 of thetemplate substrate 2 a, and thereby, thetemplate 1 can be more easily reproduced or repaired. -
FIGS. 10A and 10B are cross-sectional views schematically illustrating an example of a sequence for repairing thetemplate 1 according to the fourth embodiment. First, as illustrated inFIG. 10A , the damagedtransfer portion 36 of thetemplate 1 is peeled or otherwise removed by a cleaning process. For example, a sulfuric acid hydrogen peroxide solution (sometimes referred to as piranha etch) can be used as a cleaning solution, but the cleaning solution may be appropriately changed depending on the material of thetransfer portion 36. Thereby, thetemplate substrate 2 a in which an upper portion of thepedestal portion 24 has been cleaned is obtained as illustrated inFIG. 10B . - Thereafter, in substantially the same manner as in the method illustrated in
FIGS. 8A to 8D , thetemplate 1 is reproduced by forming anew transfer portion 36 on thepedestal portion 24 of thetemplate substrate 2 a. The remadetemplate 1 can then be used for manufacturing semiconductor devices as illustrated inFIGS. 9A to 9D . - In the fourth embodiment, imprint processing is performed by using the
template 1 in which theresin transfer portion 36 having a pattern adheres onto thepedestal portion 24. When thetransfer portion 36 is damaged, thetransfer portion 36 can be removed and anew transfer portion 36 can be formed on thepedestal portion 24. When a template formed entirely of quartz glass is damaged, the entire template must be discarded, but in the fourth embodiment, thetemplate 1 can be re-manufactured at a low cost, compared to the manufacturing cost of a quartz glass template since generally, thetemplate substrate 2 a is not damaged and can thus be reused after only a relatively simple cleaning process. - In addition, after an upper portion of the
original plate 62 is coated with thereceiver material 36 a by using the spin coating method, thereceiver material 36 a in contact with thetemplate substrate 2 a is cured. Accordingly, a film thickness of thetransfer portion 36 formed on thepedestal portion 24 of thetemplate substrate 2 a can be substantially uniformized. - In the template manufacturing method according to the fourth embodiment, after a receiver material is cured in a state of being in contact with a template substrate and the template substrate is separated from the original plate, occasionally the cured receiver material might not adhere to the template substrate and thus might remain on the original plate sometimes. In the fifth embodiment, a method of avoiding such a case will be described.
-
FIG. 11 is a sectional view schematically illustrating an example of a template according to the fifth embodiment. Thetemplate 1 further includes anadhesion layer 5 between thetemplate substrate 2 a and thetransfer portion 36. A material having an adhesion strength towards thetransfer portion 36 that is larger than the adhesion strength between thetransfer portion 36 and theoriginal plate 62 is used as theadhesion layer 5. - The
adhesion layer 5 can provide improved adhesion strength by incorporating a material providing hydrogen bonding to the relevant surfaces/materials and/or covalent bonding linkages between thetemplate substrate 2 a and thetransfer portion 36. In an example,adhesion layer 5 is formed of a material having a reactive group that bonds with thetransfer portion 36 and a reactive group bonds with thetemplate substrate 2 a. As described in the fourth embodiment, thetransfer portion 36 also requires a reactive group for curing. For example, in a case where thetransfer portion 36 has a photo radical polymerizable group, the photo radical polymerizable group may also be the reactive group for bonding with thetransfer portion 36. The material containing a photo radical polymerizable group contains at least one reactive group selected from an acryloyl group, a methacryloyl group, and a vinyl ether group. In addition, in a case where thetransfer portion 36 contains a photo cationic polymerizable group, the photo cationic polymerizable group may also be the reactive group for bonding with thetransfer portion 36. The material containing a photo cationic polymerizable group contains at least one reactive group selected from an epoxy group and an oxetanyl group. - In a case where the
template substrate 2 a is formed of quartz glass, a silane coupling agent can be used as a reactive group for bonding with thetemplate substrate 2 a. Monoalkoxysilanes, dialkoxysilanes, trialkoxysilanes, monochlorosilanes, dichlorosilanes, trichlorosilanes, and the like can be used as the silane coupling agent. Accordingly, for example, a silane coupling agent also containing a photo radical polymerizable group, a silane coupling agent also containing a photo cationic polymerizable group, or the like can be used as theadhesion layer 5. - 3-(Trimethoxysilyl)propyl acrylate, 3-[diethoxy(methyl)silyl]propyl methacrylate, 3-(trimethoxysilyl)propyl methacrylate, 3-[tris(trimethylsilyloxy)silyl]propyl methacrylate, 3-[Dimethoxy(methyl)silyl]propyl methacrylate, 3-(methoxydimethylsilyl)propyl acrylate, 3-(triethoxysilyl)propyl methacrylate, 3-(triallylsilyl)propyl acrylate, 3-(triallylsilyl)propyl methacrylate, diethoxy(3-glycidyloxypropyl)methylsilane, 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropyl(dimethoxy)methylsilane, [8-(glycidyloxy)-n-octyl]trimethoxysilane, triethoxy(3-glycidyloxypropyl)silane, and the like can be used as the
adhesion layer 5 in various example embodiments. -
FIG. 12 is a diagram schematically illustrating a role of the adhesion layer in thetemplate 1 according to the fifth embodiment. Here, a case where 3-(trimethoxysilyl)propyl acrylate is used as theadhesion layer 5 is taken as an example. As illustrated inFIG. 12 , a trimethoxysilyl group of theadhesion layer 5 bonds to thetemplate substrate 2 a formed of quartz glass by a silane coupling reaction. The acryloyl group of theadhesion layer 5 bonds to thetransfer portion 36 in the photo polymerization reaction used for curing of thetransfer portion 36. As such, theadhesion layer 5 can make thetemplate substrate 2 a more firmly adhere to thetransfer portion 36. - If the acryloyl group is switched to an epoxy group, which is a photo cationic polymerizable group, the epoxy group bonds to the
transfer portion 36 by a photo cationic polymerization reaction during curing of thetransfer portion 36. -
FIGS. 13A to 13E are cross-sectional view schematically illustrating an example of a sequence of a manufacturing method of atemplate 1 according to the fifth embodiment. Here, a case where theadhesion layer 5 and thereceiver material 36 a are configured with a material containing a photo radical polymerizable group will be described as an example. - First, as illustrated in
FIG. 13A , theadhesion layer 5 is formed on thepedestal portion 24 of thetemplate substrate 2 a by using a film formation method such as a vapor deposition method. Here, 3-(trimethoxysilyl)propyl acrylate is used for theadhesion layer 5, the trimethoxysilyl group bonds to thetemplate substrate 2 a, which is formed of quartz glass, through a silane coupling reaction during the vapor deposition process, and thereby, theadhesion layer 5 is formed. - Next, as illustrated in
FIG. 13B , theoriginal plate 62 is prepared, and thereceiver material 36 a is formed on the entire surface of theoriginal plate 62 by using the spin coating method. - Thereafter, the
template substrate 2 a is disposed such that thepedestal portion 24 faces thereceiver material 36 a on theoriginal plate 62. Next, as illustrated inFIG. 13C , thetemplate substrate 2 a and thereceiver material 36 a are brought into contact. However, unlike the case ofFIG. 8C , thereceiver material 36 a is brought into direct contact with theadhesion layer 5 formed on thepedestal portion 24 instead of thepedestal portion 24. During this contacting process, thetemplate substrate 2 a and theoriginal plate 62 are disposed in an atmosphere in which the curing reaction is inhibited. That is, in a case where thereceiver material 36 a containing a photo radical polymerizable group is used, the atmosphere contains oxygen. - Thereafter, as illustrated in
FIG. 13D , a region including thepedestal portion 24 is irradiated with ultraviolet rays. By doing so, theadhesion layer 5 and thereceiver material 36 a are bonded to each other by the photo radical polymerization reaction and are cured in the irradiated region where theadhesion layer 5 and thereceiver material 36 a are in contact with each other. As a result, thereceiver material 36 a becomes thetransfer portion 36. It is preferable that only a region corresponding to thepedestal portion 24 is irradiated with ultraviolet rays, but generally a wider region than the region exactly corresponding to thepedestal portion 24 will usually be irradiated with the ultraviolet rays. Since thepedestal portion 24 protrudes from thefirst surface 21 of thetemplate substrate 2 a, a periphery of thepedestal portion 24 is filled in an atmosphere containing oxygen. In an oxygen rich atmosphere, a photo radical polymerizable curing reaction will not substantially progress and thereceiver material 36 a exposed to the oxygen rich atmosphere during irradiation is hardly solidified, and thus, even if some periphery of thepedestal portion 24 is irradiated with ultraviolet rays, thereceiver material 36 a disposed beyond the pedestal portion 254 will not be substantially cured and therefor remains in a liquid form in those regions which are not in direct contact with theadhesion layer 5. - Next, as illustrated in
FIG. 13E , thetemplate substrate 2 a is separated from theoriginal plate 62. Thetransfer portion 36 is peeled not from thetemplate substrate 2 a but from a boundary with theoriginal plate 62 without being broken. In addition, since thereceiver material 36 a is not cured in regions other than the region corresponding to thepedestal portion 24 of thetemplate substrate 2 a, the breaking stress of thetransfer portion 36 in the region corresponding to thepedestal portion 24 is larger than the breaking stress of thereceiver material 36 a in the regions other than the region corresponding to thepedestal portion 24. Accordingly, when being separated, thetransfer portion 36 is cleanly peeled at a boundary between the region corresponding to thepedestal portion 24 and the other regions. - The
adhesion layer 5 and thereceiver material 36 a can be configured with a material containing a photo cationic polymerizable group. In such cases, when these materials are in an atmosphere including water vapor, the photo cationic polymerization curing reaction will be inhibited (similarly to inhibition of the radical polymerization curing reaction by the presence of oxygen). Accordingly, in a case where theadhesion layer 5 and thereceiver material 36 a are configured with a material containing a photo cationic polymerizable group, thetemplate substrate 2 a and theoriginal plate 62 are disposed in an atmosphere containing water vapor before the ultraviolet rays are applied inFIG. 13D . By doing so, theadhesion layer 5 and thereceiver material 36 a are bonded to each other and cured by photo cationic polymerization reaction in the region where theadhesion layer 5 and thereceiver material 36 a are in contact with each other. In the other regions where thereceiver material 36 a is not in contact with theadhesion layer 5, thereceiver material 36 a is not cured due to inhibition by water vapor and thus remains in a liquid form. - The same effect as in the fourth embodiment can also be obtained in the fifth embodiment.
-
FIG. 14 is a cross-sectional view schematically illustrating an example of a template manufactured by using the method described in the fourth embodiment. As illustrated inFIG. 14 , thetransfer portion 36 is provided on thepedestal portion 24 of thetemplate substrate 2 a; however, a peripheral edge portion of thetransfer portion 36 in contact with thepedestal portion 24 may occasionally be formed having an unintended, irregular shape. For example, aportion 363 of the peripheral edge portion of thetransfer portion 36 may protrude more in a lateral direction than an outer edge of thepedestal portion 24. If the imprint processing is performed by using such a template, there is a possibility that the portion protruding in the lateral direction would interfere with a resist pattern formed or to be formed in an adjacent shot or die region. In addition, the same problem may occur with the fifth embodiment. In the sixth embodiment, a method of manufacturing a template that can prevent such a problem from occurring will be described. -
FIGS. 15A and 15B are cross-sectional views schematically illustrating an example of a sequence of a template manufacturing method according to the sixth embodiment.FIG. 15A illustrates thetemplate 1 after separation from theoriginal plate 62 as inFIG. 8D . As illustrated inFIG. 15A , thetransfer portion 36 includes a convex portion (convex pattern) 365 and aresidual film portion 366 having a substantially uniform thickness on thepedestal portion 24 of thetemplate substrate 2 a. A recess portion (recess pattern) is a region surrounded by or between theconvex portion 365. As illustrated inFIG. 14 , a peripheral edge portion of theresidual film portion 366 may occasionally protrude outside of thepedestal portion 24. - As illustrated in
FIG. 15B , an etch-back process is performed by anisotropic dry etching, such as a RIE method, until exposed portions of theresidual film portion 366 are removed. - It is noted that a case corresponding to the fourth embodiment is described as an example here, but both exposed portions of the
residual film portion 366 and the adhesion layer (present as in the fifth embodiment) can be removed in the etch-back process. - Likewise, in the sixth embodiment, the
receiver material 36 a is cured, thetemplate substrate 2 a is separated from theoriginal plate 62, and thereafter, the exposed portions of theresidual film portion 366 can be removed by anisotropic etching. By doing so, it is possible to prevent the peripheral edge portion of theresidual film portion 366 from protruding in the lateral direction and interfering with a resist pattern formed or to be formed in the adjacent regions. - While certain embodiments have been described, these embodiments have been presented by way of examples only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
Claims (5)
1. A template for imprint patterning processes, comprising:
a template substrate having a first surface; and
a pedestal on the first surface of the template substrate, the pedestal having a second surface spaced from the first surface in a first direction perpendicular to the first surface, and a resin material pattern disposed on the second surface.
2. The template according to claim 1 , wherein
the pattern is disposed in a pattern arrangement region in a central portion of the second surface surrounded on the second surface by a mark arrangement region outside the pattern arrangement region between the central portion and an outer edge of the second surface, and
the pattern arrangement region does not extend laterally along the second surface beyond an outermost position of a projected outline of a direct contact region between the pedestal and the first surface.
3. The template according to claim 1 , wherein the pedestal is a resin material.
4. The template according to claim 1 , wherein the pedestal and the template substrate are formed of the same material.
5. A method of manufacturing a template for imprint patterning processes, comprising:
forming a guide layer on a first surface of a template substrate, the guide layer having an opening exposing the first surface, a sidewall of the opening including an angled portion that extends to form an interior angle within the guide layer that is less than 90° with respect to the first surface;
depositing a curable material in the opening;
curing the curable material; and
removing the guide layer while leaving the cured curable material.
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US20050098534A1 (en) * | 2003-11-12 | 2005-05-12 | Molecular Imprints, Inc. | Formation of conductive templates employing indium tin oxide |
US20060177535A1 (en) * | 2005-02-04 | 2006-08-10 | Molecular Imprints, Inc. | Imprint lithography template to facilitate control of liquid movement |
KR101366505B1 (en) | 2005-06-10 | 2014-02-24 | 오브듀캇 아베 | Imprint stamp comprising cyclic olefin copolymer |
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JP4995478B2 (en) * | 2006-04-18 | 2012-08-08 | 株式会社日立ハイテクノロジーズ | Nanoimprint spacer, method for producing electron microscope adjustment sample using the same, electron microscope adjustment sample, and electron microscope equipped with the same |
JP5002422B2 (en) | 2007-11-14 | 2012-08-15 | 株式会社日立ハイテクノロジーズ | Resin stamper for nanoprint |
JP5101343B2 (en) | 2008-03-03 | 2012-12-19 | 株式会社ダイセル | Manufacturing method of fine structure |
JP5117318B2 (en) | 2008-08-07 | 2013-01-16 | 株式会社日立ハイテクノロジーズ | Nanoimprinting stamper and fine structure transfer apparatus using the stamper |
JP2010049745A (en) * | 2008-08-21 | 2010-03-04 | Fuji Electric Device Technology Co Ltd | Mold for nano-imprint, and magnetic recording medium fabricated by using the same |
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2018
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- 2018-08-29 US US16/116,402 patent/US11192282B2/en active Active
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