US20210376061A1 - Power mosfet with reduced current leakage and method of fabricating the power mosfet - Google Patents

Power mosfet with reduced current leakage and method of fabricating the power mosfet Download PDF

Info

Publication number
US20210376061A1
US20210376061A1 US17/236,149 US202117236149A US2021376061A1 US 20210376061 A1 US20210376061 A1 US 20210376061A1 US 202117236149 A US202117236149 A US 202117236149A US 2021376061 A1 US2021376061 A1 US 2021376061A1
Authority
US
United States
Prior art keywords
region
layer
sacvd
layers
polyoxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US17/236,149
Other languages
English (en)
Inventor
Yean Ching Yong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Pte Ltd
Original Assignee
STMicroelectronics Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Pte Ltd filed Critical STMicroelectronics Pte Ltd
Priority to US17/236,149 priority Critical patent/US20210376061A1/en
Priority to EP21174461.0A priority patent/EP3916800A1/en
Priority to CN202121146098.3U priority patent/CN215377418U/zh
Priority to CN202110580631.5A priority patent/CN113745313A/zh
Publication of US20210376061A1 publication Critical patent/US20210376061A1/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Definitions

  • the present invention generally relates to metal oxide semiconductor field effect transistor (MOSFET) devices and, in particular, to a power MOSFET with reduced drain current leakage.
  • MOSFET metal oxide semiconductor field effect transistor
  • FIG. 1 shows a cross-section of a power metal oxide semiconductor field effect transistor (MOSFET) device 10 .
  • the MOSFET is an n-channel (nMOS) type device formed in and on a semiconductor substrate 12 doped with n-type dopant which provides the drain of the transistor 10 .
  • the substrate 12 has a front side 14 and a back side 16 .
  • a plurality of trenches 18 extend depthwise into the substrate 12 from the front side 14 .
  • the trenches 18 extend lengthwise parallel to each other in a direction perpendicular to the cross-section (i.e., into and out the page of the illustration) and form strips (this type of transistor device commonly referred to in the art as a strip-FET type transistor).
  • a region 24 doped with a p-type dopant is buried in the substrate 12 at a depth offset from (i.e., below) the front side 14 and positioned extending parallel to the front side 14 on opposite sides of each trench 18 .
  • the doped region 24 forms the body (channel) region of the transistor, with the trench 18 passing completely through the doped body region 24 and into the substrate 12 below the doped body region 24 .
  • a region 26 heavily doped with an n-type dopant is provided at the front side 14 of the substrate 12 and positioned extending parallel to the front side 14 on opposite sides of each trench 18 and in contact with the top of the doped body region 24 .
  • the doped region 26 forms the source of the transistor, with the trench 18 passing completely through the doped source region 26 and further extending, as noted above, completely through the doped body region 24 into the substrate 12 below the doped body region 24 .
  • each trench 18 is lined with an insulating layer 20 .
  • the insulating layer 20 may comprise an oxide layer (which, in an embodiment, is thermally grown from the exposed surfaces of the substrate 12 in each trench 18 ).
  • Each trench 18 is filled by a polysilicon material 22 , with the insulating layer 20 insulating the polysilicon material 22 from the substrate 12 .
  • the polysilicon material 22 forms the gate of the transistor 10 and the insulating layer 20 is the gate oxide layer.
  • a stack 30 of layers is formed over each trench 18 and laterally extends on opposite sides of each trench 18 over at least a portion of the doped regions 26 for the source.
  • Each stack 30 comprises a nitride layer 32 , and a dielectric region formed by an undoped oxide (for example, tetraethyl orthosilicate (TEOS)) layer 34 and a glass (for example, borophosphosilicate glass (BPSG)) layer 36 .
  • TEOS tetraethyl orthosilicate
  • BPSG borophosphosilicate glass
  • a source metal contact 40 extends through the stack 30 at a position between adjacent trenches 18 to make electrical contact with the doped source regions 26 .
  • Each source metal contact 40 extends depthwise into the substrate to pass through the doped source region 26 and into the doped body region 24 (thus providing a body contact for the transistor 10 that is tied to the source).
  • a source metal layer 42 extends over both the stack 30 and the source metal contacts 40 to provide a metal connection to and between all the source metal contacts 40 .
  • the stack 30 of layers insulates both the source metal layer 42 and the source metal contacts 40 from the gate (polysilicon region 22 ).
  • a drain metal layer 44 extends over the back side 16 of the substrate 12 to provide a metal connection to the drain.
  • a gate metal layer (not explicitly shown as it is offset in a direction perpendicular to the cross-section) makes an electrical connection to the gate (polysilicon region 22 ) in each trench 18 , this gate metal layer and electrical connection being schematically shown by dotted line 46 .
  • the transistor 10 could instead be a pMOS type transistor where the substrate 12 and doped source region 16 are both p-type doped and the body region 14 is n-type doped.
  • FIG. 2 shows a cross-section of a power metal oxide semiconductor field effect transistor (MOSFET) device 50 .
  • the MOSFET is an n-channel (nMOS) type device formed in and on a semiconductor substrate 52 doped with n-type dopant which provides the drain of the transistor 50 .
  • the substrate 52 has a front side 54 and a back side 56 .
  • a plurality of trenches 58 extend depthwise into the substrate 52 from the front side 54 .
  • the trenches 58 extend lengthwise parallel to each other in a direction perpendicular to the cross-section (i.e., into and out the page of the illustration) and form strips (this type of transistor device commonly referred to in the art as a strip-FET type transistor).
  • a region 64 doped with a p-type dopant is buried in the substrate 52 at a depth offset from (i.e., below) the front side 54 and positioned extending parallel to the front side 54 on opposite sides of each trench 58 .
  • the doped region 64 forms the body (channel) region of the transistor, with the trench 58 passing completely through the doped body region 64 and into the substrate 52 below the doped body region 64 .
  • a region 66 doped with an n-type dopant is provided at the front side 54 of the substrate 52 and positioned extending parallel to the front side 54 on opposite sides of each trench 58 and in contact with the top of the doped body region 64 .
  • the doped region 66 forms the source of the transistor, with the trench 58 passing completely through the doped source region 66 and further extending, as noted above, completely through the doped body region 64 into the substrate 52 below the doped body region 64 .
  • each trench 58 are lined with a first insulating layer 60 a.
  • the insulating layer 60 a may comprise a thick oxide layer.
  • the trench 58 is then filled by a first polysilicon material 62 a, with the insulating layer 60 a insulating the first polysilicon material 62 a from the substrate 52 .
  • the polysilicon material 62 a is a heavily n-type doped polysilicon material (for example, Phosphorus doped with a doping concentration of 5 ⁇ 10 20 at/cm 3 ).
  • an upper portion of the insulating layer 60 a (which would be adjacent to both the doped body region 64 and doped region 66 ) is removed from the trench 58 to expose a corresponding upper portion 61 of the polysilicon material 62 a (see, FIG. 3A ).
  • This exposed upper portion 61 of the polysilicon material 62 a is then converted (for example, using a thermal oxidation process) to form a polyoxide region 68 that is vertically aligned in the trench 58 with the remaining (lower) portion 63 of the polysilicon material 62 a (See, FIG. 3B ).
  • This remaining lower portion 63 of the polysilicon material 62 a forms a field plate electrode (also referred to as a polysource region) of the transistor 50 .
  • the side walls and bottom of the upper portion of each trench 58 are then lined with a second insulating layer 60 b (see, FIG. 3C ).
  • the insulating layer 60 b may comprise a thermally grown oxide layer.
  • the upper portion of each trench 58 is then filled by a second polysilicon material 62 b, with the insulating layer 60 b insulating the second polysilicon material 62 b from the substrate 52 (including regions 64 and 66 ).
  • the second polysilicon material 62 b forms the gate of the transistor 50 which includes two portions extending on opposite sides of the polyoxide region 68 and a further part which electrically couples those two portions and extends over the polyoxide region 68 .
  • the insulating layer 60 b forms the gate oxide layer.
  • a stack 70 of layers is formed over the substrate 52 and laterally extends on opposite sides of each trench 58 over at least a portion of the doped regions 66 for the source.
  • Each stack 70 comprises a nitride layer 72 , a dielectric region formed by an undoped oxide (for example, tetraethyl orthosilicate (TEOS)) layer 74 and a glass (for example, borophosphosilicate glass (BPSG)) layer 76 .
  • TEOS tetraethyl orthosilicate
  • BPSG borophosphosilicate glass
  • a source metal contact 80 extends through the stack 70 to make electrical contact with each doped source region 66 .
  • Each source metal contact 80 extends depthwise into the substrate to pass through the doped source region 66 and into the doped body region 64 (thus providing a body contact for the transistor 50 that is tied to the source).
  • a source metal layer 82 extends over the stack 70 and source metal contacts 80 to provide a metal connection to and between all the source metal contacts 80 , with the stack 70 insulating both source metal layer 82 and the source metal contacts 80 from the gate (second polysilicon region 62 b ).
  • a drain metal layer 84 extends over the back side 56 of the substrate 52 to provide a metal connection to the drain.
  • a gate metal layer (not shown as it is offset in a direction perpendicular to the cross-section) makes an electrical connection to the gate (second polysilicon region 62 b ) in each trench, this gate metal layer and electrical connection being schematically shown by dotted line 86 .
  • a field electrical connection (not explicitly shown) is provided between the source and the remaining lower portion of the polysilicon material 62 a which forms the field plate (polysource region) electrode that is electrically insulated from the gate.
  • the transistor 50 could instead be a pMOS type transistor where the polysilicon material 62 a is a heavily p-type doped polysilicon material, the substrate 52 and doped source region 56 are both p-type doped and the body region 54 is n-type doped.
  • a scanning electron micrograph (SEM) cross-sectional image of a single cell of the transistor 50 is shown in FIG. 4 .
  • the polyoxide region 68 is thermally grown from the heavily n-type doped polysilicon material 62 a, this oxide will be heavily doped with the n-type dopants used to dope the polysilicon material 62 a.
  • the oxide would be heavily doped with Phosphorus atoms, and the polyoxide region 68 can then include un-oxidized (or oxygen deficient) Phosphorus ions. These ions act as a sink for Oxygen atoms that are released from the Silicon-Silicon Oxide interface (which is located at the edge of each trench where the insulating layer 60 a is in contact with the substrate 52 ) during transistor fabrication processes that use high temperatures.
  • interface charge density there is an unacceptable increase in the interface charge density.
  • IDSS i.e., drain current at a near body-drain breakdown voltage with source-gate shorted
  • the density of interface charge disrupts the electric field in the mesa region 53 of the transistor 50 structure, this mesa region including at least the portion of the substrate 52 and the portion of the doped region 64 that is located between adjacent trenches. This disruption is shown by the simulation of interface charge density to electric field in FIGS. 5A-5D .
  • FIGS. 5D shows drain leakage for different interface charge density from Qf: 1 ⁇ 10 10 cm ⁇ 2 ; Qf: 3.5 ⁇ 10 11 cm ⁇ 2 ; Qf: 1 ⁇ 10 12 cm ⁇ 2 , while the electric field distribution for these interface charge densities are shown in FIGS. 5A, 5B and 5C , respectively.
  • FIGS. 5A-5C show that electric field is disrupted when interface charge are increased above 1 ⁇ 10 10 and the corresponding drain leakage current increases.
  • the simulation here is performed with a TCAD software by sweeping drain voltage from 0 to 120V; keeping the gate and source grounded.
  • an integrated circuit MOSFET device comprises: a substrate providing a drain; a first doped region buried in the substrate providing a body; a second doped region in the substrate providing a source, wherein the second doped region is adjacent the first doped region; a trench extending into the substrate and passing through first and second doped regions; a polyoxide region within the trench; a first conductive region within the trench providing a gate, wherein the first conductive region is adjacent to the polyoxide region; and a stack of layers extending over the first conductive region and polyoxide region within the trench.
  • the stack of layers includes: a first ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition (O 3 SACVD) TEOS layer; and a second O 3 SACVD TEOS layer; wherein the first and second O 3 SACVD TEOS layers are separated from each other by a dielectric region.
  • O 3 SACVD ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition
  • a method of making an integrated circuit device comprises: forming a trench in a substrate which includes a first polysilicon material doped with a dopant; oxidizing a portion of the first polysilicon material to form a polyoxide region within the trench, said polyoxide region including un-oxidized dopant ions; producing a stack of layers extending over the trench, wherein the stack includes: a first ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition (O 3 SACVD) TEOS layer; and a second O 3 SACVD TEOS layer; wherein the first and second O 3 SACVD TEOS layers are separated from each other by a dielectric region; performing a thermal anneal at a temperature which induces outgassing of passivation atoms from the first and second O 3 SACVD TEOS layers to migrate to passivate interface charges due to the presence of un-oxidized dopant ions in the polyoxide region.
  • O 3 SACVD sub-atmos
  • a method of making an integrated circuit comprises: forming a polysilicon region that is doped with a dopant; converting a portion of the polysilicon region to a polyoxide region which includes un-oxidized dopant ions; applying a stack of layers over the polyoxide region, wherein the stack of layers includes: a first ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition (O 3 SACVD) TEOS layer; and a second O 3 SACVD TEOS layer; wherein the first and second O 3 SACVD TEOS layers are separated from each other by a dielectric region; thermally annealing at a temperature which induces outgassing of passivation atoms from the first and second O 3 SACVD TEOS layers to migrate to passivate interface charges due to the presence of un-oxidized dopant ions in the polyoxide region.
  • O 3 SACVD ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition
  • an integrated circuit comprises: a substrate including a polyoxide region; and a stack of layers extending over the polyoxide region in the substrate, wherein the stack of layers includes: a first ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition (O 3 SACVD) TEOS layer; and a second O 3 SACVD TEOS layer; wherein the first and second O 3 SACVD TEOS layers are separated from each other by a dielectric region.
  • O 3 SACVD ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition
  • FIG. 1 is a cross-section of a power metal oxide semiconductor field effect transistor (MOSFET) device
  • FIG. 2 is a cross-section of a power MOSFET device
  • FIGS. 3A-3C show process steps in the manufacture of the power MOSFET device of FIG. 2 ;
  • FIG. 4 is a scanning electron micrograph image of a cross-section of the power MOSFET device of FIG. 2 ;
  • FIGS. 5A-5D illustrate results of a simulation of interface charge density to electric field distribution for the power MOSFET device of FIG. 2 ;
  • FIG. 6 is a cross-section of a power MOSFET device
  • FIG. 7 is a scanning electron micrograph image of a cross-section of the power MOSFET device of FIG. 6 ;
  • FIG. 8 is a flow diagram showing process steps for the fabrication of the stack of layers.
  • FIG. 9 is a graph showing drain current I DSS as a function of breakdown voltage BV for the transistor of FIG. 2 and the transistor of FIG. 6 .
  • FIG. 6 shows a cross-section of a power metal oxide semiconductor field effect transistor (MOSFET) device 100 .
  • the MOSFET is an n-channel (nMOS) type device formed in and on a semiconductor substrate 102 doped with n-type dopant which provides the drain of the transistor 100 .
  • the substrate 102 has a front side 104 and a back side 106 .
  • a plurality of trenches 108 extend depthwise into the substrate 102 from the front side 104 .
  • the trenches 108 extend lengthwise parallel to each other in a direction perpendicular to the cross-section (i.e., into and out the page of the illustration) and form strips (this type of transistor device commonly referred to in the art as a strip-FET type transistor).
  • a region 114 doped with a p-type dopant is buried in the substrate 102 at a depth offset from (i.e., below) the front side 104 and positioned extending parallel to the front side 104 on the opposite sides of each trench 108 .
  • the doped region 114 forms the body (channel) region of the transistor, with the trench 108 passing completely through the doped body region 114 and into the substrate 102 below the doped body region 114 .
  • a region 116 doped with an n-type dopant is provided at the front side 104 of the substrate 102 and positioned extending parallel to the front side 104 on opposite sides of each trench 108 and in contact with the top of the doped body region 114 .
  • the doped region 116 forms the source of the transistor, with the trench 108 passing completely through the doped source region 116 and further extending, as noted above, completely through the doped body region 114 into the substrate 102 below the doped body region 114 .
  • each trench 108 are lined with a first insulating layer 110 a.
  • the insulating layer 110 a may comprise a thick oxide layer.
  • the trench 108 is then filled by a first polysilicon material 112 a, with the insulating layer 110 a insulating the first polysilicon material 112 a from the substrate 102 .
  • the polysilicon material 112 a is a heavily n-type doped polysilicon material (for example, Phosphorus doped with a doping concentration of 5 ⁇ 10 20 at/cm 3 ).
  • an upper portion of the insulating layer 110 a (which would be adjacent to both the doped body region 114 and doped source region 116 ) is removed from the trench 108 to expose a corresponding upper portion of the polysilicon material 112 a.
  • This exposed upper portion of the polysilicon material 112 a is then converted (for example, using a thermal oxidation process) to form a polyoxide region 118 that is vertically aligned in the trench 108 with the remaining (lower) portion of the polysilicon material 112 a.
  • This remaining lower portion of the polysilicon material 112 a forms a field plate (polysource region) electrode of the transistor 100 .
  • each trench 108 is then lined with a second insulating layer 110 b.
  • the insulating layer 110 b may comprise a thermally grown oxide layer.
  • the upper portion of each trench 108 is then filled by a second polysilicon material 102 b, with the insulating layer 110 b insulating the second polysilicon material 112 b from the substrate 102 (including regions 114 and 116 ).
  • the second polysilicon material 112 b forms the gate of the transistor 100 which includes first and second portions extending on opposite sides of the polyoxide region 118 and a further part electrically coupling the first and second portions and extending over the polyoxide region 118 .
  • the insulating layer 110 b forms the gate oxide layer.
  • a stack 120 of layers is formed over the substrate and laterally extends on opposite sides of each trench 108 over at least a portion of the doped regions 116 for the source.
  • the layers of the stack 120 include: a first ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition (O 3 SACVD) TEOS layer 121 , a nitride layer 122 , an undoped oxide (for example, TEOS) layer 124 , a glass (for example, BPSG) layer 126 and a second O 3 SACVD TEOS layer 127 .
  • the undoped oxide layer 124 and a glass layer 126 form a dielectric region of the stack 120 .
  • the first and second O 3 SACVD layers 121 and 127 are thin layers each having thicknesses on the order of 10-100,000 Angstroms.
  • the first O 3 SACVD layer 121 may have a thickness of about 200 Angstroms and the second O 3 SACVD layer 127 may have a thickness of about 3000 Angstroms.
  • the nitride layer 122 may, for example, have a thickness on the order of about 700 Angtroms
  • the undoped oxide layer 124 may have a thickness of about 2000 Angstroms
  • the glass layer 126 may have a thickness of about 5000 Angstroms.
  • a source metal contact 130 extends through the layers of the stack 120 at positions for making electrical contact with the doped source regions 116 . Each source metal contact 130 extends depthwise into the substrate to pass through the doped source region 116 and into the doped body region 114 (thus providing a body contact for the transistor 100 that is tied to the source).
  • a source metal layer 132 extends over the stacks 120 and source metal contacts 130 to provide a metal connection to and between all the source metal contacts 130 , with the stack 120 of layer insulating both source metal layer 132 and the source metal contacts 130 from the gate (second polysilicon region 112 b ).
  • a drain metal layer 134 extends over the back side 106 of the substrate 102 to provide a metal connection to the drain.
  • a gate metal layer (not shown as it is offset in a direction perpendicular to the cross-section) makes an electrical connection to the gate (second polysilicon region 112 b ) in each trench, this gate metal layer and electrical connection being schematically shown by dotted line 136 .
  • a field electrical connection (not explicitly shown) is provided between the source and the remaining lower portion of the polysilicon material 112 a which forms the field plate (polysource region) electrode.
  • FIG. 8 is a flow diagram showing process steps for the fabrication of the stack 120 of layers.
  • a first TEOS layer 121 is deposited using ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition (O 3 SACVD) on top of the substrate 102 over the location of each filled trench 108 .
  • the nitride layer 122 is deposited on top of the first TEOS layer 121 .
  • an undoped silicate glass oxide layer 124 is deposited on top of the nitride layer 122 .
  • a BPSG layer 126 is then deposited on top of the undoped silicate glass oxide layer 124 .
  • a second TEOS layer 121 is deposited using ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition (O 3 SACVD) on top of the BPSG layer 126 .
  • a thermal annealing is then performed in dry Nitrogen (N 2 ) or wet plus dry Nitrogen (N 2 ) at an ambient annealing (high) temperature in excess of 900° C. (for example, at a temperature of about 940° C.).
  • the first and second O 3 SACVD layers 121 and 127 each serve as a source of Hydrogen atoms which are outgassed during the thermal anneal.
  • these outgassed Hydrogen atoms diffuse from the stack 120 towards the substrate to passivate interface charges due to the presence of un-oxidized dopant atom ions (for example, Phosphorus ions in the example embodiment) in the polyoxide region 118 within the trench 108 .
  • This passivation in combination with the annealing being performed in the presence of Nitrogen, serves to reduce interface charge.
  • an annealing temperature in excess of 900° C. is preferred, it will be understood that what is required of the annealing temperature is that it be sufficient to produce the outgassing of Nitrogen and further that it be higher than any process temperature that subsequently used in the fabrication of the transistor.
  • O 3 TEOS as used in layers 121 and 127 belongs to a silanol group which belongs to the functional group in silicon chemistry with the connectivity of Si—O—H.
  • Si—O—H the functional group in silicon chemistry with the connectivity of Si—O—H.
  • the phenomena of desorption of water and Hydrogen occurs providing for an outgassing of Hydrogen atoms. See, Li, et al., “Hydrogen outgassing induced liner/barrier reliability degradation in through silicon via's”, Appl. Phys. Lett.
  • FIG. 9 is a graph showing drain current I DSS as a function of breakdown voltage BV for the transistor 50 of FIG. 2 and the transistor 100 of FIG. 6 .
  • I DSS drain current
  • both the first and second O 3 SACVD layers 121 and 127 in the stack 120 is needed in order to achieve the beneficial reduction in leakage level as shown in FIG. 9 .
  • Experimentation has shown that the presence of only one of the two O 3 SACVD layers 121 and 127 alone will not produce a substantive improvement in leakage level compared to the transistor 50 of FIG. 2 .
  • FIG. 6 is for an nMOS transistor, it will be understood that the disclosed implementation is equally applicable to a pMOS transistor (i.e., where the polysilicon material 112 a is a heavily p-type doped polysilicon material, the substrate 102 and doped source region 116 are both p-type doped and the body region 114 is n-type doped.
  • a pMOS transistor i.e., where the polysilicon material 112 a is a heavily p-type doped polysilicon material, the substrate 102 and doped source region 116 are both p-type doped and the body region 114 is n-type doped.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
US17/236,149 2020-05-27 2021-04-21 Power mosfet with reduced current leakage and method of fabricating the power mosfet Pending US20210376061A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US17/236,149 US20210376061A1 (en) 2020-05-27 2021-04-21 Power mosfet with reduced current leakage and method of fabricating the power mosfet
EP21174461.0A EP3916800A1 (en) 2020-05-27 2021-05-18 Power mosfet with reduced current leakage and method of fabricating the power mosfet
CN202121146098.3U CN215377418U (zh) 2020-05-27 2021-05-26 集成电路mosfet器件以及集成电路
CN202110580631.5A CN113745313A (zh) 2020-05-27 2021-05-26 电流泄露减少的功率mosfet以及制造功率mosfet的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063030642P 2020-05-27 2020-05-27
US17/236,149 US20210376061A1 (en) 2020-05-27 2021-04-21 Power mosfet with reduced current leakage and method of fabricating the power mosfet

Publications (1)

Publication Number Publication Date
US20210376061A1 true US20210376061A1 (en) 2021-12-02

Family

ID=76011704

Family Applications (1)

Application Number Title Priority Date Filing Date
US17/236,149 Pending US20210376061A1 (en) 2020-05-27 2021-04-21 Power mosfet with reduced current leakage and method of fabricating the power mosfet

Country Status (3)

Country Link
US (1) US20210376061A1 (zh)
EP (1) EP3916800A1 (zh)
CN (2) CN215377418U (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120037983A1 (en) * 2010-08-10 2012-02-16 Force Mos Technology Co., Ltd. Trench mosfet with integrated schottky rectifier in same cell
US20130001678A1 (en) * 2011-06-29 2013-01-03 Stmicroelectronics S.R.L. High breakdown voltage semiconductor device with an insulated gate formed in a trench, and manufacturing process thereof
US20130001677A1 (en) * 2011-06-28 2013-01-03 Renesas Electronics Corporation Semiconductor device, method of manufacturing the semiconductor device, and electronic device
US20220320332A1 (en) * 2021-04-06 2022-10-06 Stmicroelectronics Pte Ltd Gate contact structure for a trench power mosfet with a split gate configuration
US20230135000A1 (en) * 2021-10-31 2023-05-04 Stmicroelectronics Pte Ltd Oxide field trench power mosfet with a multi epitaxial layer substrate configuration

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006055885B4 (de) * 2006-11-27 2018-02-15 Infineon Technologies Austria Ag Verfahren zum Dotieren eines Halbleiterkörpers
US20140273374A1 (en) * 2013-03-15 2014-09-18 Joseph Yedinak Vertical Doping and Capacitive Balancing for Power Semiconductor Devices
US8871593B1 (en) * 2013-07-15 2014-10-28 Infineon Technologies Austria Ag Semiconductor device with buried gate electrode and gate contacts

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120037983A1 (en) * 2010-08-10 2012-02-16 Force Mos Technology Co., Ltd. Trench mosfet with integrated schottky rectifier in same cell
US20130001677A1 (en) * 2011-06-28 2013-01-03 Renesas Electronics Corporation Semiconductor device, method of manufacturing the semiconductor device, and electronic device
US20130001678A1 (en) * 2011-06-29 2013-01-03 Stmicroelectronics S.R.L. High breakdown voltage semiconductor device with an insulated gate formed in a trench, and manufacturing process thereof
US20220320332A1 (en) * 2021-04-06 2022-10-06 Stmicroelectronics Pte Ltd Gate contact structure for a trench power mosfet with a split gate configuration
US20230135000A1 (en) * 2021-10-31 2023-05-04 Stmicroelectronics Pte Ltd Oxide field trench power mosfet with a multi epitaxial layer substrate configuration

Also Published As

Publication number Publication date
EP3916800A1 (en) 2021-12-01
CN215377418U (zh) 2021-12-31
CN113745313A (zh) 2021-12-03

Similar Documents

Publication Publication Date Title
US10811533B2 (en) Medium high voltage MOSFET device
US10840246B2 (en) Integrated circuit having a vertical power MOS transistor
US20230352548A1 (en) Semiconductor device and method of manufacturing the same
US9818845B2 (en) MOS-driven semiconductor device and method for manufacturing MOS-driven semiconductor device
US8748976B1 (en) Dual RESURF trench field plate in vertical MOSFET
US20130134505A1 (en) Semiconductor device for power and method of manufacture thereof
US9722071B1 (en) Trench power transistor
JP7383760B2 (ja) 半導体装置
US7494876B1 (en) Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same
TW201735264A (zh) 作為高壓器件之閘極介電質之凹陷淺溝渠隔離
US20090108343A1 (en) Semiconductor component and method of manufacture
US10529847B2 (en) Trench power semiconductor component and method of manufacturing the same
TWI567830B (zh) 溝槽式功率電晶體結構及其製造方法
US11996458B2 (en) Trench-gate MOS transistor and method for manufacturing the same
US9466707B2 (en) Planar mosfets and methods of fabrication, charge retention
US10141415B2 (en) Combined gate and source trench formation and related structure
US6849546B1 (en) Method for improving interlevel dielectric gap filling over semiconductor structures having high aspect ratios
CN103337518B (zh) 包括带电结构的半导体器件及用于制造半导体器件的方法
JP7263715B2 (ja) 半導体装置の製造方法および半導体装置
US20210376061A1 (en) Power mosfet with reduced current leakage and method of fabricating the power mosfet
US20230231020A1 (en) Field plating at source side of gate bias mosfets to prevent vt shift
US7119017B2 (en) Method for improving interlevel dielectric gap filling over semiconductor structures having high aspect ratios
CN115938943A (zh) Ldmos器件及其制造方法
CN113809162A (zh) 功率元件
CN113270320B (zh) 一种半导体元件的制备方法及半导体元件

Legal Events

Date Code Title Description
STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED