US20210320645A1 - High linearity rf circuit and method for improving linearity thereof - Google Patents
High linearity rf circuit and method for improving linearity thereof Download PDFInfo
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- US20210320645A1 US20210320645A1 US16/876,628 US202016876628A US2021320645A1 US 20210320645 A1 US20210320645 A1 US 20210320645A1 US 202016876628 A US202016876628 A US 202016876628A US 2021320645 A1 US2021320645 A1 US 2021320645A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/16—Networks for phase shifting
- H03H11/18—Two-port phase shifters providing a predetermined phase shift, e.g. "all-pass" filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/18—Networks for phase shifting
- H03H7/20—Two-port phase shifters providing an adjustable phase shift
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/54—Circuits using the same frequency for two directions of communication
- H04B1/58—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
- H04B1/581—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa using a transformer
- H04B1/582—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa using a transformer with automatic balancing
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/02—Variable filter component
- H03H2210/025—Capacitor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/03—Type of tuning
- H03H2210/033—Continuous
Abstract
Various embodiments of the invention relate to high linearity RF circuits that may operate or function consistently under various levels of voltage, current or power. Embodiments of a diode module comprising cascaded diodes and connecting bias branches are disclosed for improved linearity of RF circuits. The diode module may comprise multiple diodes reversely coupled in series. Additionally, the diode module further comprises connecting bias branches coupled in parallel with diode pairs. Such configuration of reversely cascaded diodes coupled with alternatively connecting bias branches increases the robustness of the diode module to handle high input voltage or power from the RF path, thus provides enhanced linearity for the RF circuit as compared to single diode configuration.
Description
- The present invention relates generally to RF circuits, and more particularly to RF circuits with high linearity.
- A radio frequency (RF) circuit is an interconnection of electrical components (e.g., resistors, inductors, capacitors, switches, transistors, voltage sources, current sources, etc.) used to transmit, receive or process radio signals. A phase shifter is a microwave network module which provides a controllable phase shift of the radio frequency (RF) signal. RF circuits have been used widely in various applications, such as satellite communications, automotive radar, 5G cellular communications, imaging and sensing, etc. It is desirable that a RF circuit has a high linearity such that the RF circuit may operate or function consistently under various levels of voltage, current or power in the RF circuit.
- Many RF circuits, e.g. RF phase shifters, filters, voltage controlled oscillators, mixers, or frequency multiplier, etc., use varactors as voltage-controlled capacitors. The varactor is a type of diode with a reverse-biased p-n junction displaying voltage-dependent capacitance. When handling higher input power, larger voltage swing may change the diode DC biasing point which limits the linearity of the varactors.
- Accordingly, there is a need for high linearity RF circuits that may operate or function consistently under various levels of voltage, current or power.
- The invention relates to high linearity RF circuits that may operate or function consistently under various levels of voltage, current or power.
- In one or more embodiments, a diode module comprising cascaded diodes and connecting bias branches is disclosed. The diode module may comprise multiple diodes reversely coupled in series. In one or more embodiments, a first diode has its cathode connected to a RF path (RF); a second diode has its anode connected to the anode of the first diode at a first node; a third diode has its cathode connected to the cathode of the second diode at a second node and its anode grounded. Additionally, the diode module may further comprise a first connecting bias branch coupled between the RF path and the second node, and a second connecting bias branch coupled between the first node and ground. The connecting bias branches may comprise a resistor, a choke inductor, or a combination of both. The resistance value of the resistor in the connecting bias branches is set to be small enough to ensure an equal or approximately equal DC potential between nodes for each connecting bias branch, and also large enough to provide a desired RF isolation between the nodes. In one or more embodiments, a choke inductor may be added in series to the resistor to further improve RF isolation between the nodes. Such a configuration of reversely cascaded diodes coupled with alternatively connecting bias branches increases the robustness of the diode module to handle high input voltage or power from the RF path, thus provides enhanced linearity for the RF circuit as compared to single diode configuration.
- In one or more embodiments, a diode module may further comprise a series capacitor besides cascaded diodes and connecting bias branches. The series capacitor couples in series to a pair of reversely cascaded diode, and provides further DC blocking between the RF path and ground.
- In one or more embodiments, a diode module comprising cascaded diodes, connecting bias branches, a series capacitor, and a bias voltage source is disclosed. The diode module comprises a first diode and a second diode reversely coupled in series. The first diode has its anode connected to a RF path (RF) via a series capacitor at a first node and its cathode connected to a cathode of a second diode at a second node. The second diode has its anode grounded. Additionally, the diode module further comprises a first connecting bias branch coupled between a DC voltage source VDC and the second node, and a second connecting bias branch coupled between the first node and ground. The series capacitor in the diode module provides further DC blocking between the RF path and ground. In one or more embodiments, the DC voltage source VDC may be adjustable to provide a desirable bias voltage to the diode module.
- Embodiments of the diode modules may be used in various RF circuits, including but not limited to RF phase shifters, RF filters, voltage-controlled oscillators, mixers, amplifiers, frequency multipliers, etc. Simulation results show that RF phase shifters incorporated with cascaded diode modules have significantly improved linearity performance as shown in IP3 and IMD3 parameters, thus verifies the effectiveness of the reversely cascaded configurations.
- Reference will be made to exemplary embodiments of the present invention that are illustrated in the accompanying figures. Those figures are intended to be illustrative, rather than limiting. Although the present invention is generally described in the context of those embodiments, it is not intended by so doing to limit the scope of the present invention to the particular features of the embodiments depicted and described.
- FIG. (“FIG.”) 1 depicts a prior art analog RF phase shifter.
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FIG. 2 depicts a schematic diagram of a diode module comprising cascaded diodes and connecting bias branches according to embodiment 1 of the invention. -
FIG. 3 depicts a schematic diagram of a diode module comprising cascaded diodes, connecting bias branches, and a series capacitor according toembodiment 2 of the invention. -
FIG. 4 depicts a schematic diagram of a diode module comprising cascaded diodes, connecting bias branches, a series capacitor, and a bias voltage source according to embodiment 3 of the invention. -
FIG. 5 depicts a simulation comparison of input IP3 between the prior art RF phase shifter and an embodiment of the present invention. -
FIG. 6 depicts an IMD3 of the prior art RF phase shifter. -
FIG. 7 depicts an IMD3 of an improved RF phase shifter according to one or more embodiment of the invention. - One skilled in the art will recognize that various implementations and embodiments of the invention may be practiced in accordance with the specification. All of these implementations and embodiments are intended to be included within the scope of the invention.
- In the following description, for purpose of explanation, specific details are set forth in order to provide an understanding of the present invention. The present invention may, however, be practiced without some or all of these details. The embodiments of the present invention described below may be incorporated into a number of different electrical components, circuits, devices, and systems. Structures and devices shown in block diagram are illustrative of exemplary embodiments of the present invention and are not to be used as a pretext by which to obscure broad teachings of the present invention. Connections between components within the figures are not intended to be limited to direct connections. Rather, connections between components may be modified, re-formatted, or otherwise changed by intermediary components.
- Components, or modules, shown in diagrams are illustrative of exemplary embodiments of the invention and are meant to avoid obscuring the present disclosure. It shall also be understood that throughout this discussion that components may be described as separate functional units, which may comprise sub-units, but those skilled in the art will recognize that various components, or portions thereof, may be divided into separate components or may be integrated together, including integrated within a single system or component. It should be noted that functions or operations discussed herein may be implemented as components. Components may be implemented in software, hardware, or a combination thereof.
- Furthermore, connections between components or systems within the figures are not intended to be limited to direct connections. Rather, data between these components may be modified, re-formatted, or otherwise changed by intermediary components. Also, additional or fewer connections may be used. It shall also be noted that the terms “coupled,” “connected,” or “communicatively coupled” shall be understood to include direct connections, indirect connections through one or more intermediary devices, and wireless connections.
- Reference in the specification to “one embodiment,” “preferred embodiment,” “an embodiment,” or “embodiments” means that a particular feature, structure, characteristic, or function described in connection with the embodiment is included in at least one embodiment of the invention and may be in more than one embodiment. Also, the appearances of the above-noted phrases in various places in the specification are not necessarily all referring to the same embodiment or embodiments.
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FIG. 1 is a prior artanalog phase shifter 200 disclosed in U.S. Pat. No. 10,193,519 B2. As shown inFIG. 1 , theanalog phase shifter 200 comprises a first high-low pass (HLP)filter 210, asecond HLP filter 220, and an all-pass filter (APF) 230 coupled in series between the first high-low pass filter 210 and thesecond HLP filter 220 to assist phase shift tuning. Thefirst HLP filter 210 receives an input RF signal RFin from aninput terminal 202 and outputs a firstHLP output signal 218. TheAPF 230 receives the firstHLP output signal 218 and outputs anAPF output signal 238. Thesecond HLP filter 220 receivesAPF output signal 238 and outputs an output RF signal RFout via anoutput terminal 204. The HLP filters 210 and 220 may each incorporate multiple sections (212, 214, 216, 222, 224, and 226) for desired functions. The output RF signal RFout has a controllable and adjustable relative phase shift over the input RF signal RFin. - However, as shown in
FIG. 1 , the D1, D4 in LP section, D6 in All Pass Filter has only one diode. When handling higher input power, larger voltage swing would change the diode DC biasing point, which may limit the linearity of phase shifter, and thus cause undesirable IP3 (third-order intercept point, a well-known parameter to gauge linearity in RF functions and components) and IMD3 (third-Order intermodulation distortion, a well-known parameter to gauge linearity in RF functions and components). - To overcome the above drawbacks, various technical schemes have been implemented in the present invention for improving linearity of RF circuits, e.g. RF phase shifters.
-
FIG. 2 depicts a schematic diagram of adiode module 250 comprising cascaded diodes and connecting bias branches according to embodiment 1 of the invention. Thediode module 250 comprises afirst diode 252, asecond diode 254, and athird diode 256, which are reversely coupled in series. Specifically, thefirst diode 252 has its cathode connected to a RF path (RF) between an RF input port (RFin) and an RF output port (RFout); thesecond diode 254 has its anode connected to the anode of thefirst diode 252 at afirst node 272; thethird diode 256 has its cathode connected to the cathode of thesecond diode 254 at asecond node 274 and its anode grounded. Additionally, thediode module 250 further comprises a first connectingbias branch 262 coupled between the RF path and thesecond node 274, and a second connectingbias branch 264 coupled between thefirst node 272 and ground. In this embodiment, the first connectingbias branch 262 and the second connectingbias branch 264 are simply connecting resistors. Such configuration of reversely cascaded diodes coupled with alternatively connecting resistors increases the robustness of thediode module 250 to handle high input voltage or power from the RF path, thus provides enhanced linearity for the RF circuit as compared to single diode configuration. - In one or more embodiments, the diode module 250 (also applicable to other diode modules in the present patent disclosure) may be used to replace the shunt diodes (e.g. D1a, D1b, D4a and D4b) shown in
FIG. 1 to improve overall linearity of the RF circuit. The RF path shown inFIG. 2 may be referred as the RF signal processing or transmission path between theRFin port 202 and theRFout port 204, as shown inFIG. 1 . - In one or more embodiments, the
first diode 252, thesecond diode 254, and thethird diode 256 may have the same specification (e.g. size, current limit, etc.) and may be varactors. DC biasing may be added (via thefirst node 272 and the second node 274) to provide DC biasing for each diode. Diode size may be configured to increase accordingly with increase of diode section, i.e., diode size of a three-section structure would be approximately three times the diode size in a single section structure. Additionally, the resistance value of the first connectingbias branch 262 and the second connectingbias branch 264 are chosen to be small enough to provide a same DC potential between nodes it connected, and large enough to provide good RF isolation between nodes. In one or more embodiments, the first connectingbias branch 262 and the second connectingbias branch 264 may have the same resistance value, e.g. a value of around 3000 Ohm. -
FIG. 3 depicts a schematic diagram of adiode module 300 comprising cascaded diodes, connecting resistors, and a series capacitor according toembodiment 2 of the invention. Thediode module 300 comprises afirst diode 312 and asecond diode 314, which are reversely coupled in series. Specifically, thefirst diode 312 has its cathode connected to a RF path (RF) and its anode connected to an anode of thesecond diode 314 at afirst node 332. Aseries capacitor 316 couples between the cathode of thesecond diode 314 at asecond node 334 and ground. Additionally, thediode module 300 further comprise a first connectingresistor 322 coupled between the RF path and thesecond node 334, and a second connectingresistor 324 coupled between thefirst node 332 and ground. Compared to thediode module 250 in the embodiment 1, thediode module 300 incorporates theseries capacitor 316 for further DC blocking between the RF path and ground. -
FIG. 4 depicts a schematic diagram of adiode module 400 comprising cascaded diodes, connecting resistors, a series capacitor, and a bias voltage source according to embodiment 3 of the invention. Thediode module 400 comprises twodiodes first diode 412 has its anode connected to a RF path (RF) via aseries capacitor 416 at afirst node 432 and its cathode connected to a cathode of asecond diode 414 at asecond node 434. Thesecond diode 414 has its anode grounded. Additionally, thediode module 400 further comprises a first connectingresistor 422 coupled between thefirst node 432 and ground, and a second connectingresistor 424 coupled between a DC voltage source VDC and thesecond node 434, and, similar to theseries capacitor 316 in thediode module 300 of theembodiment 2, theseries capacitor 416 in thediode module 400 also provides further DC blocking between the RF path and ground. In one or more embodiments, the DC voltage source VDC may be adjustable to provide a desirable bias voltage to thediode module 400. -
FIG. 5 depicts a simulation comparison of input IP3 between the prior art RF phase shifter (as shown inFIG. 1 ) and an improved RF phase shifter incorporated with reversely cascaded diode modules, according to one or more embodiment of the present invention. As well known for one skilled in the art, IP3 is the point where first-order line and third-order line cross, and one of the fundamental measurements for RF circuit linearity. It is highly desirable for a RF circuit to have a high IP3 for high linearity performance. As shown inFIG. 5 ,line 505 relates a simulated IP3 of a prior art RF phase shifter shown inFIG. 1 , andline 510 relates to an embodiment of an RF phase shifter incorporating reversely cascaded diodes configuration. It is clearly shown that with the incorporation of reversely cascaded diodes, an RF phase shifter may has an IP3 improved at least 5 dB, thus improves linearity of the phase shifter significantly. -
FIG. 6 andFIG. 7 respectively depicts an IMD3 of a prior art RF phase shifter and an IMD3 of an improved RF phase shifter according to one or more embodiment of the invention. IMD3 refers to the intermodulation distortion from the third order of an RF circuit, which is the result of nonlinear behavior of the RF circuit. It is of particular importance for wide band RF circuits because the distortion may be often within the signal band. The prior art RF phase shifter (shown inFIG. 1 ) has an IMD3 of 26 dBc (decibels relative to carrier) as shown inFIG. 6 , while an embodiment of the improved RF phase shifters has an IMD3 of 62dBc as shown inFIG. 7 , which is a significant improvement from the prior art. - The foregoing description of the invention has been described for purposes of clarity and understanding. It is not intended to limit the invention to the precise form disclosed. Various modifications may be possible within the scope and equivalence of the appended claims. Although embodiments of the present invention are used in RF phase shifters for linearity improvement, one skilled in the art shall understand that the configurations of using cascaded diodes in reverse series connection coupled with connecting bias branches and/or capacitors may also be used in various other RF circuits, including but not limited to voltage-controlled oscillators, amplifiers, filters, mixers, frequency multipliers, etc.
- It will be appreciated to those skilled in the art that the preceding examples and embodiments are exemplary and not limiting to the scope of the present invention. It is intended that all permutations, enhancements, equivalents, combinations, and improvements thereto that are apparent to those skilled in the art upon a reading of the specification and a study of the drawings are included within the true spirit and scope of the present invention.
- It shall also be noted that elements of the claims may be arranged differently including having multiple dependencies, configurations, and combinations. For example, in embodiments, the subject matter of various claims may be combined with other claims.
Claims (20)
1. A radio-frequency (RF) circuit comprising:
an RF path coupled between an RF input port and an RF output port; and
a diode module coupled in shunt to the RF path for circuit linearity improvement, the diode module comprising:
a first diode coupled to the RF path;
a second diode coupled in series to the first diode at a first node, the second diode and the first diode are reversely cascaded;
a third diode or a capacitor coupled in series between the second diode at a second node and ground;
a first connecting bias branch coupled between the RF path and the second node such that the first connecting bias branch is in parallel to the first diode and the second diode; and
a second connecting bias branch coupled between the first node and ground such that the second connecting bias branch is in parallel to the second diode and the third diode or the capacitor.
2. The RF circuit of claim 1 wherein the first diode has a cathode coupled to the RF path and an anode coupled to the second diode, the second diode has an anode coupled to the first diode and a cathode coupled to the third diode or the capacitor.
3. The RF circuit of claim 1 wherein the third diode has a cathode coupled to the second diode.
4. The RF circuit of claim 1 , wherein the first diode, the second diode and the third diode each receive DC biasing inputs for bias control.
5. A radio-frequency (RF) circuit comprising:
an RF path coupled between an RF input port and an RF output port; and
a diode module coupled in shunt to the RF path for circuit linearity improvement, the diode module comprising:
a capacitor coupled to the RF path;
a first diode coupled in series to the capacitor at a first node;
a second diode having one end coupled in series to the first diode at a second node and another end grounded, the second diode and the first diode are reversely cascaded; and
a first connecting bias branch coupled between the first node and ground such that the first connecting bias branch is in parallel to the first diode and the second diode.
6. The RF circuit of claim 5 further comprises a second connecting bias branch coupled between a DC voltage source VDC and the second node.
7. The RF circuit of claim 5 , wherein the first diode has an anode coupled to the capacitor and a cathode coupled to the second diode, the second diode has a cathode coupled to the first diode and an anode coupled to ground.
8. A method for improving linearity of a radio-frequency (RF) circuit comprising:
given an RF path coupled between an RF input port and an RF output port:
coupling a first diode in shunt to the RF path;
reversely cascading a second diode to the first diode at a first node;
coupling a third diode or a capacitor in series between the second diode at a second node and ground;
coupling a first connecting bias branch between the RF path and the second node such that the first connecting bias branch is in parallel to the first diode and the second diode; and
coupling a second connecting bias branch between the first node and ground such that the second connecting bias branch is in parallel to the second diode and the third diode or the capacitor.
9. The method of claim 8 wherein the first diode has a cathode coupled to the RF path and an anode coupled to the second diode, the second diode has an anode coupled to the first diode and a cathode coupled to the third diode or the capacitor.
10. The method of claim 8 , wherein the first diode, the second diode and the third diode each receive DC biasing inputs for bias control.
11. The RF circuit of claim 1 wherein the first and the second connecting bias branches each comprises a resistor.
12. The RF circuit of claim 1 wherein the first diode, the second diode and the third diode have the same specification.
13. The RF circuit of claim 1 wherein the first diode, the second diode and the third diode are varactors.
14. The RF circuit of claim 6 wherein the first and the second connecting bias branches each comprises a resistor.
15. The RF circuit of claim 5 wherein the first diode and the second diode have the same specification.
16. The RF circuit of claim 5 wherein the first diode and the second diode are varactors.
17. The method of claim 8 wherein the third diode has a cathode coupled to the second diode.
18. The method of claim 8 wherein the first and the second connecting bias branches each comprises a resistor.
19. The method of claim 8 wherein the first diode, the second diode and the third diode have the same specification.
20. The method of claim 8 wherein the first diode, the second diode and the third diode are varactors.
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US16/876,628 US11146248B1 (en) | 2020-04-10 | 2020-05-18 | High linearity RF circuit and method for improving linearity thereof |
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CN202010277867.7A CN111416614B (en) | 2020-04-10 | 2020-04-10 | High-linearity radio frequency circuit and method for improving linearity of radio frequency circuit |
US16/876,628 US11146248B1 (en) | 2020-04-10 | 2020-05-18 | High linearity RF circuit and method for improving linearity thereof |
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