CN107171992A - Simulated pre-distortion circuit based on zero bias diode - Google Patents
Simulated pre-distortion circuit based on zero bias diode Download PDFInfo
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- H—ELECTRICITY
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- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/38—Synchronous or start-stop systems, e.g. for Baudot code
- H04L25/40—Transmitting circuits; Receiving circuits
- H04L25/49—Transmitting circuits; Receiving circuits using code conversion at the transmitter; using predistortion; using insertion of idle bits for obtaining a desired frequency spectrum; using three or more amplitude levels ; Baseband coding techniques specific to data transmission systems
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- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
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Abstract
The present invention relates to a kind of simulated pre-distortion circuit for being used to linearize the modulator and link of ROF in light carrier radio communication system, belong to electronic technology field.The simulated pre-distortion circuit of the present invention, is made up of a pair of antiparallel diodes, wherein, diode uses zero offset Schottky diode, it is not necessary to applied bias source, and eliminates T junction；What the series resistance of two diodes was respectively adopted is broadband resistance, but resistance is different, therefore, it is possible to produce more accurate pre-distorted signals.The advantage of the invention is that：1. being tested by two-frequency signal, at frequency band 24.25GHz 27.5GHz, third order intermodulation minimum improves 10dB, and maximum improves 36dB；2. by adjusting series resistance R1, the R2 of diode, the operating center frequency of predistorter can be made to change in the range of 20GHz 40GHz, so as to which for fixed frequency band, the series resistance for choosing specific resistance carries out predistortion.
Description
Technical Field
The invention relates to a predistortion circuit capable of linearizing an optical wireless system, and belongs to the technical field of electronics. And more particularly to a predistortion circuit capable of compressing third order nonlinear distortion.
Background
With the development of communication technology, the demand for broadband wireless access increases. High frequency carrier multiplexing can effectively improve the utilization rate of frequency spectrum and the capacity of a communication system. Transmitting signals through microwave coaxial cables is too costly and high frequency signals have high transmission losses in the cable.
Radio over fiber (RoF) solves the distribution problem of broadband wireless. The radio over fiber system transmits broadband wireless signals in an analog optical link from a central station to a low-cost base station, and has the characteristics of wide bandwidth, low cost, low loss, light weight, safety, electromagnetic interference resistance and the like.
However, in radio-over-fiber systems, there is a problem of nonlinearity due to optical subcarrier modulation, and main nonlinear devices include an electro-absorption modulator (EAM), a mach-zehnder modulator, a laser, and the like. In addition, due to the proposed 5G technology, Orthogonal Frequency Division Multiplexing (OFDM) and Beamforming (Beamforming) technologies, the number of carriers is greatly increased, interference between frequency spectrums is more serious, and nonlinearity has a greater influence on the system. Therefore, eliminating the third order intermodulation of the nonlinear system becomes a key issue.
The analog predistortion circuit can well inhibit third-order intermodulation. An inductor for radio frequency choke and a direct current bias power supply are added in the existing broadband analog predistortion circuit. The circuit has larger size and higher power consumption, the three-order intermodulation is sensitive to change along with the direct current bias, and two capacitors are used at the grounding ends of the two branches.
The invention has the following advantages: 1. the grounding end uses a capacitor, so that a T-shaped section structure for radio frequency choke is removed, namely the capacitor connected with the inductor and the two branches is removed, and the structure is simpler and the size is smaller; 2. the present invention does not require a voltage source. The self-bias current through the two diodes is controlled by precisely selecting the resistance to generate the required third order intermodulation signal. The problem that three-order intermodulation signals are sensitive to change along with the bias current in the conventional circuit is solved, and the power consumption is reduced. 3. The compression of the high-frequency-range third-order intermodulation component is carried out by adjusting the resistance value of the resistor connected with the two diodes in series, and the problem that the improvement degree of the pre-existing distortion circuit on the third-order intermodulation is reduced in the high-frequency range is solved. 4. The circuit can vary the centre frequency and operating bandwidth by varying the resistance of resistors 3 and 4 in series with the diodes.
The zero-bias diode-based analog predistortion circuit is characterized in that two Schottky diodes 1 and 2 are connected in parallel, so that a predistortion circuit with smaller size and higher bandwidth is invented, and the linearity performance is good.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a predistortion circuit for linearizing an optical wireless system.
The predistortion circuit is installed at the input end of the radio over fiber system and generates predistortion on an input signal.
The invention relates to an analog predistortion circuit based on a zero-bias diode, which comprises: the circuit comprises a left branch circuit 01 and a right branch circuit 02, wherein the left branch circuit 01 is formed by connecting a Schottky diode 1 and a resistor 3 in series, and the right branch circuit 02 is formed by connecting a Schottky diode 2 and a resistor 4 in series; the two Schottky diodes 1 and 2 of the left branch circuit 01 and the right branch circuit 02 are zero-bias diodes and are arranged in an anti-parallel manner; the two resistors 3 and 4 have the same bandwidth but different resistance values; the input port 7 and the output port 8 of the predistortion circuit are connected to a microstrip transmission line having a characteristic impedance of 50 Ohm.
According to the zero-bias diode-based analog predistortion circuit, the two diodes 1 and 2 are arranged in an antiparallel manner, a bias power supply is not needed to provide bias current for the two diodes 1 and 2, and the diodes can generate internal bias current when voltage exists at the two ends of the diodes; when a signal is input, each order component generated on the left branch 01 and each order component generated on the right branch 02 counteract partial even-order components, but odd-order components such as first order, third order and fifth order are superposed;
the invention is based on the analog predistortion circuit of zero offset diode, control the self-bias current through two diodes by adjusting the resistance of resistance 3 and resistance 4, in order to produce the three-order intermodulation signal needed; the compression of the high-band third-order intermodulation products is also performed by adjusting the resistance values of the resistors 3 and 4.
The invention is based on the analog predistortion circuit of zero offset diode, adjust two electric capacity 5 and 6 can compensate the phase error that the anti-parallel diode introduces to a certain extent, produce the predistortion signal that accords with the requirement.
The zero-bias diode-based analog predistortion circuit does not need a power divider, a quarter-impedance converter and a bias power supply, and reduces the size and the power consumption of the circuit.
The zero-bias diode-based analog predistortion circuit is characterized in that: the third-order nonlinear distortion can be compressed, and the adjustability of the predistortion can be realized; according to the size of nonlinearity generated by a nonlinear transmission system, the third-order nonlinear component output by the predistortion circuit can be changed by adjusting the series resistance of the two paths of diodes, so that the predistortion circuit is suitable for predistortion requirements of different degrees, and the specific analysis is as follows.
For electro-absorption modulators (EAMs), Mach-Zehnder modulators, and lasers, among other nonlinear devices in radio-over-fiber systems, the transmission characteristics can be expressed as follows:
(1-1)。
among the intermodulation components generated by the nonlinear device, the third-order nonlinear component is the main nonlinear distortion, so considering only the third-order intermodulation nonlinear output can be expressed as:
(1-2)。
since the two diodes 1 and 2 are anti-parallel and the resistances of the resistors 3 and 4 are different, the even order components will not be completely cancelled. With the addition of the odd-order components, the transmission characteristics of the predistortion circuit 10 are as follows:
(1-3)
(1-4)。
to cancel out the third order intermodulation, let: the coefficient in front of the cubic term is zero, and the condition required to be met for obtaining the maximum offset of the third-order intermodulation component is as follows:
(1-5)。
the Shockley equation of the diode is developed by Taylor to obtain:
(1-6)。
wherein,is a bias voltage to be applied to the substrate,is the voltage applied across the diode,coefficient of each frontWhereinK is the boltzmann constant, q is the electronic charge, T is the thermodynamic temperature,is an electronic charge. Because the diode adopts a zero-bias diode, the bias current which is changed along with the input voltage can be generated in the diode, and the external bias voltage is not needed.
When the input amplitude isThe single frequency signal of (a):when the temperature of the water is higher than the set temperature,
（1-7）。
when no bias current is applied, the self-bias current generated in the diode is as follows:
（1-8）。
is the load impedance of the diode for which it is intended，Is the resistance of a resistor in series with the diodeTo output impedance:whereinIs composed ofThe equivalent resistance seen from the current source upwards can be expressed as:
（1-9）。
is the junction resistance of the diode and is,is the resistance of a resistor in series with the diode,for input signalsThe voltage across the diode.
The voltage applied across the diode by the input signal is derived below：Is the voltage of the signal source and,impedance looking into the diode and load for voltage input to the PDC：
(1-10)。
Is the impedance of the load and is,is the zero-biased junction capacitance of the diode,is the angular frequency.
The reflection coefficient at the diode is:，is the characteristic impedance of the microstrip line.
Wherein the input impedance is:
(1-11)。
the input voltage is:
(1-12)。
whereinIs the internal resistance of the current source.
Voltage applied to diodeComprises the following steps:
(1-13)。
is thatAdded to the resistorThe voltage of (c) can be expressed as:
(1-14)。
the current, which is the second harmonic component of the diode equivalent circuit, can be expressed as:
(1-15)。
due to the fact thatIs thatActing on a resistorVoltage of (c), by norton equivalent principle:can be expressed as:
(1-16)。
third order intermodulation component current generated for the diode:(1-17)。
the voltage generated across the diode is:
(1-18)。
when the input signal has an amplitude ofThe frequency of the two-tone signal isAndwhen considering onlyAndwhen in item:。
voltage generated by base frequency signal at load endComprises the following steps:
(1-19)
is the length of the transmission line.
Voltage generated at load terminalComprises the following steps:
(1-20)。
andis a phase constant. Similarly, the third-order intermodulation current generated by the other diode is，
Its voltage at the load endComprises the following steps:。
wherein the other diode 2 has its third-order intermodulation component generating voltage across the diodesCan be expressed as:
(1-21)
equivalent current source being a diode 2Equivalent resistance as seen from below:
(1-22)
third order intermodulation component generated for diode 2:
(1-23)
for the resistance applied to the diode 2Voltage on:
(1-24)。
the finally obtained third-order intermodulation voltage of the load end is as follows:
(1-25)。
is a phase constant when the frequency of the input signal isAndwith a magnitude ofThe parameters of the predistorter are as follows, in order to satisfy the conditions (1-5) for maximum cancellation of IMD 3:
(1-26)。
in the predistorter 10 of the present invention, since the bias power supply is removed, the influence of the bias on various parameters of the diode does not need to be considered, so that only the resistors 3 and 4 need to be considered, and the influence of the RF signal amplitude Vs on the third-order intermodulation needs to be considered, and in addition, since the bias is zero, the junction capacitance of the diode isAs can be seen from the expression, the real and imaginary parts of the resulting third order intermodulationAnd the resistance values of the resistors 3 and 4R 1 and R2,and angular frequencyThis means, in relation to the adjustment of the relative positions of R1, R2,the amplitude and phase of the resulting third order intermodulation can be adjusted as shown in fig. 3.
R1、R2,Will change the amplitude phase of the generated IMD3_ pdc so thatAndform a certain error vector:is a residual IMD3 signal and is therefore eliminated as much as possibleEven if it isIs closer toI.e., R1, R2,should be such that the parameters of the predistortion，The condition of maximum cancellation of predistortion is satisfied, so that predistortion can be eliminated as much as possible by adjusting basic parameters. While the parameters satisfying the predistortion maximum removal condition (R1, R2,) There may be more than one, including, therefore, it is desirable to tune as many values as possible to achieve the maximum cancellation effect.
In the invention, because zero bias voltage is adopted, the capacitance value of the junction capacitor is fixed, the value is taken as the junction capacitor in zero bias, the internal bias voltage depends on R1, R2 and the amplitude of an input signal, and the values of R1 and R2 are changed, so that a satisfactory effect is achieved in a certain bandwidth.
Adjusting R1, R2 has an effect on the diode bandwidth because adjusting R1, R2, the angular frequency that satisfies the maximum cancellation condition (1-5) is adjustedIn contrast, therefore, the bandwidth compressed by IMD3 may vary in the third order intermodulation improvement map.
Because the zero-bias diode generates self-bias current, after R1 and R2 are selected, the value of the junction capacitance of the diode is fixed, and in addition, the zero-bias diode aims at the fixed bandwidth: 24.25-27.5GHz predistortion, corresponding toFixed, therefore, only one set of R1, R2 values needs to be found to satisfy the predistortion condition of maximum cancellation, so that IMD3 is eliminated at this frequency.
Because the theoretical expression of three-order intermodulation generated by PDC is too complex, the optimal solution of R1 and R2 is difficult to be accurately solved, and therefore, the PDC can reach the optimal IMD3 compression characteristic under the non-bias state by optimizing the resistance values of R1 and R2 in simulation. This process is as follows: regulating electricityAfter the resistance values R1 and R2 are resisted, the three-order intermodulation generated by the two branches is respectively shown as IMD3_1 and IMD3_2 in FIG. 4, and the synthesized predistortion signals are shown as. The separate setting of R1, R2 to different resistances is due to the predistortion signals generated by the two diodes respectively: IMD3_1=And IMD3_2=Can have a more flexible and free vector superposition mode, and can lead the synthesized predistortion signal to be in a more flexible and free vector superposition mode by accurately selecting the resistance value of the resistorAmplitude, phase and ideal predistortion signalAnd closer. After the synthesized predistortion signal is cancelled with the IMD3 signal in the EAM, the residual IMD3 signal after cancellation is compared to two equal value predistorters:to a certain extent.
The capacitors 3 and 4 of the predistorter have the function of changing the parasitic parameters of the circuit, and have certain influence on the compression characteristic of IMD3, the highest IMD3 compression point and the compressed frequency width.
Drawings
FIG. 1 is a circuit diagram of an analog predistortion circuit 12 based on zero-bias diode of the present invention
FIG. 2 is an equivalent circuit diagram of the zero-bias diode-based analog predistortion circuit 12 of the present invention
FIG. 3 is a diagram showing the influence of circuit parameters on the synthesis of third-order intermodulation vectors
FIG. 4 is a diagram showing the effect of two resistors with different values on the third-order intermodulation synthesis
FIG. 5 is a diagram of the steps of the dual-frequency test of the analog predistortion circuit based on the zero-bias diode of the present invention.
Detailed Description
The predistortion circuit of the present invention is shown in fig. 1. The invention relates to an analog predistortion circuit based on zero-bias diode, which is a series predistortion linearizer, comprising: the circuit comprises a left branch circuit 01 and a right branch circuit 02, wherein the left branch circuit 01 is formed by connecting a Schottky diode 1 and a resistor 3 in series, and the right branch circuit 02 is formed by connecting a Schottky diode 2 and a resistor 4 in series; the two Schottky diodes 1 and 2 of the left branch circuit 01 and the right branch circuit 02 are zero-bias diodes and are arranged in an anti-parallel manner; the two resistors 3 and 4 have the same bandwidth but different resistance values; capacitor 5 and capacitor 6, input port 7 and output port 8.
The invention is based on the analog predistortion circuit of zero offset diode, control the self-bias current through two diodes by adjusting the resistance of resistance 3 and resistance 4, in order to produce the three-order intermodulation signal needed; the compression of the high-band third-order intermodulation products is also performed by adjusting the resistance values of the resistors 3 and 4. The two capacitors 5 and 6 are adjusted to compensate the phase error introduced by the antiparallel diodes to a certain extent, resulting in a desired predistortion signal.
The invention relates to an analog predistortion circuit based on a zero-bias diode, which adopts a mode of arranging two Schottky diodes 1 and 2 in an antiparallel manner to generate third-order intermodulation component signals with different amplitudes and different phases on two branches, and generates a required predistortion signal after vector synthesis.
According to the zero-bias diode-based analog predistortion circuit, the two diodes 1 and 2 are arranged in an antiparallel manner, a bias power supply is not needed to provide bias current for the two diodes 1 and 2, and the diodes can generate internal bias current when voltage exists at the two ends of the diodes; when a signal is input, each order component generated on the left branch 01 and each order component generated on the right branch 02 counteract partial even-order components, but odd-order components such as first order, third order and fifth order are superposed; by accurately selecting the resistance values of the resistors 3 and 4, a more accurate third-order intermodulation component can be generated.
Due to the difference in the resistance of the two resistors 3 and 4, the even-order nonlinear components of the two diodes 1 and 2 are partially cancelled out, and mainly generate a third-order intermodulation signal. By adjusting the broadband resistors 3 and 4, the third-order intermodulation signal vectors generated by the two diodes 1 and 2 are superposed to generate nonlinear distortion with different degrees, and different third-order intermodulation compression characteristics exist in different frequency bands.
In this scheme, no current source is needed because the antiparallel diodes 1 and 2 are zero-biased diodes, which internally generate a self-bias current that is related to the voltage applied across the diodes, the temperature.
Since the bias power supply is removed in the novel predistortion circuit, the bias power supply is not needed, so that only the resistance values R1 and R2 of the resistors 3 and 4 and the signal amplitude need to be consideredThe influence on the third-order intermodulation, so that the real part and imaginary part of the final third-order intermodulation, the resistance values of the two resistors 3 and 4, the junction capacitance of the two diodes, and the angular frequencyTherefore, the adjustment of R1 and R2 can adjust the amplitude and phase of the generated third-order intermodulation, and can meet the conditions that the third-order intermodulation of the nonlinear device is equal in amplitude and opposite in phase with the third-order intermodulation of the predistorter under a certain frequency, so that the third-order intermodulation can be eliminated in a certain frequency band.
The invention specifically comprises the following steps of the double-frequency simulation test of the radio-over-fiber system adopting the electro-absorption modulator:
the linearization performance of the predistortion circuit 10 was tested in an Advance Design System (ADS). The specific testing steps are as shown in fig. 5, firstly, the predistorter is connected in series with the electro-absorption modulator 14, and then a dual-tone signal 15 with a dual-frequency interval of 4.125MHz and a power of 0.1dBm is introduced into the predistorter 10 of the present invention; meanwhile, the electric absorption modulator 16 is separately tested by the two-tone signal 13 with the same frequency and interval and power, and the test result is used as a reference to calculate the compression amount of the third-order intermodulation.
The output signal of the electro-absorption modulator 14 passing through the predistorter 10 is compared with the output signal of the electro-absorption modulator 14 not passing through the predistorter 10
The output signal of the modulator 16 is extracted to calculate the compression amount of the third-order intermodulation.
In a simulation test, the influence of the resistance value changes of the resistors 3 and 4 in the predistorter of the invention on the third-order intermodulation compression quantity needs to be debugged and analyzed. The resistance R1 of the resistor 3 is first adjusted to find the resistance R1 of the resistor 3 with the largest compression amount.
The resistance value R1 of the resistor 3 is set to the resistance value of the resistor 3 having the largest compression amount, and the value of the resistance value R2 of the resistor 4 is changed. It can be seen from the optimization simulation of the ADS that the resistance R2 of the resistor 4 has a weak influence on the maximum compression amount, but has a large influence on the center frequency, and the working frequency band of the predistorter can be adjusted by adjusting the resistance R2 of the resistor 4.
Through the optimization, the resistance value R1 of the resistor 3 and the resistance value R2 of the resistor 4 are determined, and the optimal compression performance can be achieved on the target frequency band. The simulation test determines that the resistance R1 of the resistor 3 is 198 Ohm, the resistance R2 of the resistor 4 is 83 Ohm, and the minimum improvement of the predistorter 10 of the invention on the third-order intermodulation is 10dB and the maximum improvement is 36.4dB (at 26 GHz) on the basis of 24.25GHz-27.5GHz, and the insertion loss is 1.2 dB.
The above simulation tests show that the analog predistortion circuit 10 of the present invention substantially meets the requirements of an electroabsorption modulator in a linearized radio-over-fiber system. In addition, the analog predistortion circuit of the invention can also linearize other similar nonlinear devices or systems. The above description is only exemplary of the present invention and should not be taken as limiting the invention, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. The invention relates to an analog predistortion circuit based on zero-bias diode, which is a series predistortion linearizer, comprising: the circuit comprises a left branch circuit 01 and a right branch circuit 02, wherein the left branch circuit 01 is formed by connecting a Schottky diode 1 and a resistor 3 in series, and the right branch circuit 02 is formed by connecting a Schottky diode 2 and a resistor 4 in series; the two Schottky diodes 1 and 2 of the left branch circuit 01 and the right branch circuit 02 are zero-bias diodes and are arranged in an anti-parallel manner; the two resistors 3 and 4 have the same bandwidth but different resistance values; the input port 7 and the output port 8 of the predistortion circuit are connected to a microstrip transmission line having a characteristic impedance of 50 Ohm.
2. The zero-bias diode-based analog predistortion circuit of claim 1, the two diodes 1 and 2 being placed in anti-parallel, without using a bias power supply to provide bias current to the two diodes 1 and 2, the diodes themselves being capable of generating an internal bias current by themselves when a voltage is present across them; when a signal is input, each order component generated on the left branch 01 and each order component generated on the right branch 02 counteract part of even order components, but odd order components such as first order, third order and fifth order are superposed.
3. The zero-bias diode-based analog predistortion circuit of claim 1, wherein the self-bias current through the two diodes is controlled by adjusting the resistance values of the resistor 3 and the resistor 4 to generate the required third-order intermodulation signal; the compression of the high-frequency-band third-order intermodulation component is also carried out by adjusting the resistance values of the resistors 3 and 4; and synthesizing the third-order intermodulation distortion with different amplitudes and phases by adjusting the resistance values of the broadband resistors 3 and 4.
4. The zero-bias diode-based analog predistortion circuit of claim 1, wherein the two capacitors 5 and 6 are adjusted to compensate for phase errors introduced by the antiparallel diodes to some extent, resulting in a desired predistortion signal.
5. The zero-bias diode-based analog predistortion circuit of claim 1, wherein a power divider, a quarter-impedance transformer and a bias power supply are not required, reducing circuit size and power consumption.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111064438A (en) * | 2019-12-25 | 2020-04-24 | 北京普能微电子科技有限公司 | Analog predistortion circuit, power amplifier and radio frequency module |
| CN111416614A (en) * | 2020-04-10 | 2020-07-14 | 成都仕芯半导体有限公司 | High-linearity radio frequency circuit and method for improving linearity of radio frequency circuit |
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| CN101919158A (en) * | 2007-12-10 | 2010-12-15 | 香港城市大学 | Average power efficiency enhancement and linearity improvement of microwave power amplifiers |
| CN104660183A (en) * | 2013-11-15 | 2015-05-27 | 恩智浦有限公司 | An amplifier circuit |
| CN105262444A (en) * | 2015-05-21 | 2016-01-20 | 云南大学 | Ultra wideband analog pre-distortion circuit |
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| CN101919158A (en) * | 2007-12-10 | 2010-12-15 | 香港城市大学 | Average power efficiency enhancement and linearity improvement of microwave power amplifiers |
| CN104660183A (en) * | 2013-11-15 | 2015-05-27 | 恩智浦有限公司 | An amplifier circuit |
| CN105262444A (en) * | 2015-05-21 | 2016-01-20 | 云南大学 | Ultra wideband analog pre-distortion circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111064438A (en) * | 2019-12-25 | 2020-04-24 | 北京普能微电子科技有限公司 | Analog predistortion circuit, power amplifier and radio frequency module |
| CN111064438B (en) * | 2019-12-25 | 2023-12-08 | 北京普能微电子科技有限公司 | Analog predistortion circuit, power amplifier and radio frequency module |
| CN111416614A (en) * | 2020-04-10 | 2020-07-14 | 成都仕芯半导体有限公司 | High-linearity radio frequency circuit and method for improving linearity of radio frequency circuit |
| CN111416614B (en) * | 2020-04-10 | 2023-10-27 | 成都仕芯半导体有限公司 | High-linearity radio frequency circuit and method for improving linearity of radio frequency circuit |
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