US20200298365A1 - Polishing apparatus and polishing method - Google Patents

Polishing apparatus and polishing method Download PDF

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Publication number
US20200298365A1
US20200298365A1 US16/542,631 US201916542631A US2020298365A1 US 20200298365 A1 US20200298365 A1 US 20200298365A1 US 201916542631 A US201916542631 A US 201916542631A US 2020298365 A1 US2020298365 A1 US 2020298365A1
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Prior art keywords
polishing
rotation axis
semiconductor wafer
face
substrate
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Abandoned
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US16/542,631
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English (en)
Inventor
Ken INAZUMI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Filing date
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Assigned to TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, KABUSHIKI KAISHA TOSHIBA reassignment TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INAZUMI, KEN
Publication of US20200298365A1 publication Critical patent/US20200298365A1/en
Abandoned legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B24B29/06—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces for elongated workpieces having uniform cross-section in one main direction
    • B24B29/08—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces for elongated workpieces having uniform cross-section in one main direction the cross-section being circular, e.g. tubes, wires, needles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Definitions

  • Embodiments described herein relate generally to a polishing apparatus and a polishing method.
  • CMP Chemical mechanical polishing
  • the polishing rate sometimes differs between the central area and the circumferential area of a substrate, which may cause nonuniform polishing of the face of the substrate. Under the circumstances, a method for adjusting the polishing rate across the face of a substrate has been required.
  • FIGS. 1A and 1B are schematic diagrams of a polishing apparatus according to a first embodiment
  • FIG. 2 is a schematic diagram of a polishing apparatus according to a second embodiment.
  • FIG. 3 is a schematic diagram of a polishing apparatus according to a third embodiment.
  • a polishing apparatus includes a polishing table; a polishing pad provided on the polishing table; a first rotating mechanism configured to rotate the polishing table on a first rotation axis; a substrate holding unit configured to hold a substrate and press the substrate against the polishing pad; a second rotating mechanism configured to rotate the substrate holding unit on a second rotation axis; and a tilting mechanism configured to change the angle between the first rotation axis and the second rotation axis.
  • the circumferential edge of the substrate is always kept inside the circumferential edge of the polishing pad during polishing of the substrate.
  • polishing apparatuses and polishing methods according to embodiments will now be described.
  • a polishing apparatus includes a polishing table; a polishing pad provided on the polishing table; a first rotating mechanism configured to rotate the polishing table on a first rotation axis; a substrate holding unit configured to hold a substrate and press the substrate against the polishing pad; a second rotating mechanism configured to rotate the substrate holding unit on a second rotation axis; and a tilting mechanism configured to change the angle between the first rotation axis and the second rotation axis.
  • the circumferential edge of the substrate is always kept inside the circumferential edge of the polishing pad during polishing of the substrate.
  • a polishing method includes rotating a polishing pad on a first rotation axis; and pressing a substrate rotating on a second rotation axis tilted with respect to the first rotation axis, against the polishing pad to polish the substrate while always keeping the circumferential edge of the substrate inside the circumferential edge of the polishing pad.
  • FIGS. 1A and 1B are schematic diagrams of the polishing apparatus according to the first embodiment.
  • FIG. 1A is a side view of the polishing apparatus and
  • FIG. 1B is a top view of the polishing apparatus.
  • the polishing apparatus of the first embodiment is a CMP apparatus 100 configured to polish the face of a substrate such as a semiconductor wafer.
  • the CMP apparatus 100 of the first embodiment includes a turntable 10 (the polishing table), a polishing pad 12 , a first supporting shaft 14 ; a first rotating mechanism 18 , a top ring 20 (the substrate holding unit), a second supporting shaft 22 , a second rotating mechanism 24 , a top ring tilting mechanism 26 (the tilting mechanism), and a polishing agent supplying nozzle 28 .
  • the turntable 10 rotates on a first rotation axis RA 1 .
  • the turntable 10 rotates on its own axis that is the first rotation axis RA 1 .
  • the turntable 10 is an example of the polishing table.
  • the polishing pad 12 is provided on the turntable 10 .
  • the polishing pad 12 is fixed on the turntable 10 .
  • the polishing pad 12 rotates on the first rotation axis RA 1 .
  • the polishing pad 12 rotates in the circumferential direction.
  • the polishing pad 12 is an elastic body.
  • the polishing pad 12 contains resin or nonwoven fabric, for example.
  • the polishing pad 12 is made of polyurethane resin, for example.
  • the first supporting shaft 14 supports the turntable 10 at the center of the turntable 10 .
  • the first rotating mechanism 18 is designed to rotate the turntable 10 .
  • the first rotating mechanism 18 rotates the first supporting shaft 14 .
  • the first rotating mechanism 18 includes a motor, and a bearing configured to rotatably hold the first supporting shaft 14 , for example.
  • the top ring 20 is designed to hold a semiconductor wafer W to be polished.
  • the top ring 20 is designed to press the semiconductor wafer W being held against the polishing pad 12 .
  • the top ring 20 rotates on a second rotation axis RA 2 .
  • the top ring 20 rotates on the second rotation axis RA 2 .
  • the semiconductor wafer W held by the top ring 20 rotates on the second rotation axis RA 2 .
  • the top ring 20 is an example of the substrate holding unit.
  • the second supporting shaft 22 supports the top ring 20 at the center of the top ring 20 .
  • the second rotating mechanism 24 is designed to rotate the top ring 20 .
  • the second rotating mechanism 24 rotates the second supporting shaft 22 .
  • the second rotating mechanism 24 includes a motor, and a bearing configured to rotatably hold the second supporting shaft 22 , for example.
  • the first rotating mechanism 18 and the second rotating mechanism 24 rotate the turntable 10 and the top ring 20 , respectively, in one direction.
  • both the turntable 10 and the top ring 20 rotate in the counterclockwise direction.
  • the top ring tilting mechanism 26 is designed to change the angle between the first rotation axis RA 1 and the second rotation axis RA 2 (the angle ⁇ in FIG. 1A ) for polishing of the semiconductor wafer W.
  • the top ring tilting mechanism 26 supports the second rotating mechanism 24 , for example.
  • the top ring tilting mechanism 26 is designed to fix the angle ⁇ between the first rotation axis RA 1 and the second rotation axis RA 2 at a constant angle during polishing of the semiconductor wafer W.
  • the top ring tilting mechanism 26 moves the top ring 20 , the second supporting shaft 22 , and the second rotating mechanism 24 using a motor, for example, and tilts these components with respect to the vertical direction.
  • the top ring tilting mechanism 26 is designed to change the angle ⁇ between the first rotation axis RA 1 and the second rotation axis RA 2 within the range of 0° to 5°, for example.
  • the top ring tilting mechanism 26 is designed to tilt the second supporting shaft 22 by an angle ⁇ with respect to the vertical direction, for example. Tilting the second supporting shaft 22 changes the inclination of the second rotation axis RA 2 .
  • Tilting the second supporting shaft 22 tilts the face of the semiconductor wafer W being polished by the angle ⁇ with respect to the face of the turntable 10 . This makes the face of the semiconductor wafer W being polished not in parallel with the face of the turntable 10 .
  • the polishing agent supplying nozzle 28 is designed to supply slurry onto the face of the polishing pad 12 .
  • the slurry contains abrasive grains.
  • the abrasive grains are particles containing silicon oxide, aluminum oxide, or cerium oxide, for example.
  • the CMP apparatus 100 is configured to polish the semiconductor wafer W while always keeping the circumferential edge of the semiconductor wafer W (shown by We in FIG. 1B ) inside the circumferential edge of the polishing pad 12 (shown by 12 e in FIG. 1B ).
  • the first rotation axis RA 1 of the turntable 10 and the second rotation axis RA 2 of the top ring 20 do not move relative to each other during polishing of the semiconductor wafer W.
  • the relative position of the turntable 10 and the top ring 20 does not change during polishing of the semiconductor wafer W.
  • the relative position of the first supporting shaft 14 and the second supporting shaft 22 does not change during polishing of the semiconductor wafer W.
  • the face of the semiconductor wafer W is polished and planarized.
  • the semiconductor wafer W to be polished has a circuit pattern formed by repeated layer deposition and etching of the film, for example.
  • the semiconductor wafer W to be polished has at least one of a dielectric film and a conductive film exposed on its face.
  • the semiconductor wafer W is put into the CMP apparatus 100 .
  • the turntable 10 is then rotated on the first rotation axis RA 1 by the first rotating mechanism 18 .
  • the polishing pad 12 which is fixed on the turntable 10 , is also rotated on the first rotation axis RA 1 .
  • the polishing agent supplying nozzle 28 is then operated to supply slurry onto the face of the polishing pad 12 .
  • the face of the semiconductor wafer W held by the top ring 20 is then pressed against the polishing pad 12 .
  • the top ring 20 is rotated on the second rotation axis RA 2 by the second rotating mechanism 24 .
  • the semiconductor wafer W, which is held by the top ring 20 is also rotated on the second rotation axis RA 2 .
  • the top ring tilting mechanism 26 tilts the second supporting shaft 22 by an angle ⁇ with respect to the vertical direction.
  • the second rotation axis RA 2 is tilted by the angle ⁇ with respect to the first rotation axis RA 1 .
  • the second rotation axis RA 2 is tilted by the angle ⁇ with respect to the vertical direction.
  • Tilting the second supporting shaft 22 tilts the face of the semiconductor wafer W by the angle ⁇ with respect to the face of the turntable 10 . This makes the face of the semiconductor wafer W not in parallel with the face of the turntable 10 .
  • the semiconductor wafer W While the face of the semiconductor wafer W is kept not in parallel with the face of the turntable 10 , the semiconductor wafer W is pressed against the polishing pad 12 . The face of the semiconductor wafer W is thus polished while the face of the semiconductor wafer W is kept not in parallel with the face of the turntable 10 .
  • the angle ⁇ between the first rotation axis RA 1 and the second rotation axis RA 2 is more than 0° and equal to or less than 5°, for example.
  • the angle ⁇ between the first rotation axis RA 1 and the second rotation axis RA 2 is fixed at a constant angle during polishing.
  • the supply of slurry onto the polishing pad 12 is stopped.
  • the semiconductor wafer W is then taken out of the CMP apparatus 100 .
  • a polishing agent is supplied onto a rotating turntable, and then a semiconductor wafer being rotated is pressed against a polishing pad provided on the turntable in order to polish the face of the semiconductor wafer.
  • the face of the semiconductor wafer is thus chemically and mechanically polished and planarized.
  • the rotation axis of the turntable and the rotation axis of the semiconductor wafer W are generally kept in parallel with each other so that the face of the semiconductor wafer W is uniformly polished. In other words, the face of the semiconductor wafer W and the face of the turntable 10 are kept in parallel with each other during polishing.
  • the polishing rate differs between the central area and the circumferential area of the semiconductor wafer W and the face of the semiconductor wafer W may be polished nonuniformly.
  • the polishing rate in the central area of the semiconductor wafer W is higher than the polishing rate in the circumferential area of the semiconductor wafer W.
  • the difference in the polishing rate is thought to be caused depending on the type of the film and the pattern formed on the face of the semiconductor wafer W.
  • the CMP apparatus 100 of the first embodiment includes the top ring tilting mechanism 26 .
  • the top ring tilting mechanism 26 is designed to change the angle between the first rotation axis RA 1 and the second rotation axis RA 2 (the angle ⁇ in FIG. 1A ) for polishing of the semiconductor wafer W.
  • the top ring tilting mechanism 26 keeps the face of the semiconductor wafer W not in parallel with the face of the turntable 10 during polishing of the face of the semiconductor wafer W. Keeping the face of the semiconductor wafer W not in parallel with the face of the turntable 10 causes different forces for pressing the semiconductor wafer W against the polishing pad 12 across the face of the semiconductor wafer W.
  • the force for pressing the semiconductor wafer W against the polishing pad 12 is greater in the circumferential area of the semiconductor wafer W than in the central area of the semiconductor wafer W. Accordingly, the polishing rate in the circumferential area of the semiconductor wafer W becomes higher than the polishing rate in the central area of the semiconductor wafer W.
  • the top ring tilting mechanism 26 enables adjustment of the polishing rate across the face of the semiconductor wafer W.
  • the face of the semiconductor wafer W can be polished uniformly by fixing the angle ⁇ between the first rotation axis RA 1 and the second rotation axis RA 2 at an appropriate angle depending on the type of the film and the pattern formed on the face of the semiconductor wafer W.
  • fixing the angle ⁇ at a large angle will make the polishing rate in the circumferential area of the semiconductor wafer W higher than the polishing rate in the central area of the semiconductor wafer W.
  • the top ring tilting mechanism 26 should preferably change the angle ⁇ between the first rotation axis RA 1 and the second rotation axis RA 2 within the range of 0° to 5°. There is a case where uniform polishing is achieved at an angle ⁇ of 0°. An angle ⁇ more than 50 makes uniform polishing difficult irrespective of the type of the film and the pattern.
  • the angle ⁇ between the first rotation axis RA 1 and the second rotation axis RA 2 should preferably be more than 0° and equal to or less than 5°, more preferably equal to or more than 0.5° and equal to or less than 5°, and much more preferably equal to or more than 1° and equal to or less than 4°, for example.
  • the face of the semiconductor wafer W can be polished uniformly by always keeping the circumferential edge of the semiconductor wafer W inside the circumferential edge of the polishing pad 12 during polishing of the semiconductor wafer W.
  • the relative position of the first rotation axis RA 1 of the turntable 10 and the second rotation axis RA 2 of the top ring 20 should preferably be fixed.
  • the relative position of the first supporting shaft 14 and the second supporting shaft 22 should preferably be fixed during polishing of the semiconductor wafer W.
  • the turntable 10 and the top ring 20 should preferably be rotated in one direction.
  • the first embodiment provides the polishing apparatus and the polishing method that can adjust the polishing rate across the face of the semiconductor wafer W by keeping the face of the semiconductor wafer W not in parallel with the face of the turntable 10 .
  • the apparatus and the method thus enable uniform polishing of the face of the semiconductor wafer W.
  • the polishing apparatus of the second embodiment differs from that of the first embodiment in that the tilting mechanism changes the inclination of the first rotation axis instead of the inclination of the second rotation axis.
  • the description overlapping with the description of the polishing apparatus and the polishing method of the first embodiment will partly be omitted.
  • FIG. 2 is a schematic diagram of a polishing apparatus according to the second embodiment.
  • FIG. 2 is a side view of the polishing apparatus.
  • the polishing apparatus of the second embodiment is a CMP apparatus 200 configured to polish the face of a substrate such as a semiconductor wafer.
  • the CMP apparatus 200 of the second embodiment includes the turntable 10 (the polishing table), the polishing pad 12 , the first supporting shaft 14 , the first rotating mechanism 18 , the top ring 20 (the substrate holding unit), the second supporting shaft 22 , the second rotating mechanism 24 , a turntable tilting mechanism 27 (the tilting mechanism), and the polishing agent supplying nozzle 28 .
  • the turntable tilting mechanism 27 is designed to change the angle between the first rotation axis RA 1 and the second rotation axis RA 2 (the angle ⁇ in FIG. 2 ) for polishing the semiconductor wafer W.
  • the turntable tilting mechanism 27 supports the first rotating mechanism 18 , for example.
  • the turntable tilting mechanism 27 is designed to fix the angle ⁇ between the first rotation axis RA 1 and the second rotation axis RA 2 at a constant angle during polishing of the semiconductor wafer W.
  • the turntable tilting mechanism 27 tilts the turntable 10 , the first supporting shaft 14 , and the first rotating mechanism 18 using an oil pressure mechanism, for example, with respect to the vertical direction.
  • the turntable tilting mechanism 27 is designed to change the angle ⁇ between the first rotation axis RA 1 and the second rotation axis RA 2 within the range of 0° to 5°, for example.
  • the turntable tilting mechanism 27 is designed to tilt the first supporting shaft 14 by an angle ⁇ with respect to the vertical direction, for example. Tilting the first supporting shaft 14 changes the inclination of the first rotation axis RA 1 .
  • Tilting the first supporting shaft 14 tilts the face of the turntable 10 by the angle ⁇ with respect to the face of the semiconductor wafer W being polished. This makes the face of the semiconductor wafer W being polished not in parallel with the face of the turntable 10 .
  • a CMP method according to the second embodiment will now be described. A case where the CMP apparatus 200 of the second embodiment is used will be described as an example.
  • the semiconductor wafer W is put into the CMP apparatus 200 .
  • the turntable tilting mechanism 27 tilts the first supporting shaft 14 by an angle ⁇ with respect to the vertical direction.
  • the first rotation axis RA 1 is tilted by the angle ⁇ with respect to the second rotation axis RA 2 .
  • the first rotation axis RA 1 is tilted by the angle ⁇ with respect to the vertical direction.
  • the turntable 10 is then rotated on the first rotation axis RA 1 by the first rotating mechanism 18 .
  • the polishing pad 12 which is fixed on the turntable 10 , is also rotated on the first rotation axis RA 1 .
  • the polishing agent supplying nozzle 28 is then operated to supply slurry onto the face of the polishing pad 12 .
  • the face of the semiconductor wafer W held by the top ring 20 is then pressed against the polishing pad 12 .
  • the top ring 20 is rotated on the second rotation axis RA 2 by the second rotating mechanism 24 .
  • the semiconductor wafer W, which is held by the top ring 20 is also rotated on the second rotation axis RA 2 .
  • the semiconductor wafer W While the face of the semiconductor wafer W is kept not in parallel with the face of the turntable 10 , the semiconductor wafer W is pressed against the polishing pad 12 . The face of the semiconductor wafer W is thus polished while the face of the semiconductor wafer W is kept not in parallel with the face of the turntable 10 .
  • the angle ⁇ between the first rotation axis RA 1 and the second rotation axis RA 2 is more than 0° and equal to or less than 5°, for example, and fixed at a constant angle during polishing.
  • the supply of slurry onto the polishing pad 12 is stopped.
  • the semiconductor wafer W is then taken out of the CMP apparatus 200 .
  • the second embodiment provides the polishing apparatus and the polishing method that can adjust the polishing rate across the face of the semiconductor wafer W by keeping the face of the semiconductor wafer W not in parallel with the face of the turntable 10 , as in the first embodiment.
  • the apparatus and the method thus enable uniform polishing of the face of the semiconductor wafer W.
  • the polishing apparatus of the third embodiment differs from that of the first embodiment in that the apparatus further includes a control unit configured to control the tilting mechanism and change the angle between the first rotation axis and the second rotation axis during polishing of the substrate.
  • a control unit configured to control the tilting mechanism and change the angle between the first rotation axis and the second rotation axis during polishing of the substrate.
  • FIG. 3 is a schematic diagram of a polishing apparatus according to the third embodiment.
  • FIG. 3 is a side view of the polishing apparatus.
  • the polishing apparatus of the third embodiment is a CMP apparatus 300 configured to polish the face of a substrate such as a semiconductor wafer.
  • the CMP apparatus 300 of the third embodiment includes: the turntable 10 (the polishing table); the polishing pad 12 ; the first supporting shaft 14 ; the first rotating mechanism 18 ; the top ring 20 (the substrate holding unit); the second supporting shaft 22 ; the second rotating mechanism 24 ; the top ring tilting mechanism 26 (the tilting mechanism); the polishing agent supplying nozzle 28 ; and a tilting mechanism controlling unit 30 (the control unit).
  • the tilting mechanism controlling unit 30 controls the top ring tilting mechanism 26 .
  • the tilting mechanism controlling unit 30 is designed to control the top ring tilting mechanism 26 and change the angle between the first rotation axis RA 1 and the second rotation axis RA 2 (the angle ⁇ in FIG. 3 ) during polishing of the semiconductor wafer W.
  • the tilting mechanism controlling unit 30 is hardware such as a circuit board, or a combination of such hardware and software such as a control program stored in the hardware and a memory, for example.
  • a CMP method according to the third embodiment will now be described. A case where the CMP apparatus 300 of the third embodiment is used will be described as an example.
  • the semiconductor wafer W is put into the CMP apparatus 300 .
  • the turntable 10 is then rotated on the first rotation axis RA 1 by the first rotating mechanism 18 .
  • the polishing pad 12 which is fixed on the turntable 10 , is also rotated on the first rotation axis RA 1 .
  • the polishing agent supplying nozzle 28 is then operated to supply slurry onto the face of the polishing pad 12 .
  • the face of the semiconductor wafer W held by the top ring 20 is then pressed against the polishing pad 12 .
  • the top ring 20 is rotated on the second rotation axis RA 2 by the second rotating mechanism 24 .
  • the semiconductor wafer W, which is held by the top ring 20 is also rotated on the second rotation axis RA 2 .
  • the top ring tilting mechanism 26 keeps the second supporting shaft 22 in parallel with the vertical direction. In other words, the top ring tilting mechanism 26 keeps the second rotation axis RA 2 in parallel with the first rotation axis RA 1 .
  • the angle between the first rotation axis RA 1 and the second rotation axis RA 2 (the angle ⁇ in FIG. 3 ) is 0°.
  • the face of the semiconductor wafer W and the face of the turntable 10 are kept in parallel with each other during polishing.
  • the tilting mechanism controlling unit 30 controls the top ring tilting mechanism 26 to tilt the second supporting shaft 22 with respect to the vertical direction.
  • the second rotation axis RA 2 is tilted by an angle ⁇ ( ⁇ >0°) with respect to the first rotation axis RA 1 .
  • the second rotation axis RA 2 is tilted by the angle ⁇ with respect to the vertical direction.
  • the second supporting shaft 22 is tilted while the turntable 10 is being rotated.
  • Tilting the second supporting shaft 22 tilts the face of the semiconductor wafer W by the angle ⁇ with respect to the face of the turntable 10 . This makes the face of the semiconductor wafer W not in parallel with the face of the turntable 10 .
  • the semiconductor wafer W While the face of the semiconductor wafer W is kept not in parallel with the face of the turntable 10 , the semiconductor wafer W is pressed against the polishing pad 12 . The face of the semiconductor wafer W is polished for a predetermined period of time while the face of the semiconductor wafer W is kept not in parallel with the face of the turntable 10 .
  • the supply of slurry onto the polishing pad 12 is stopped.
  • the semiconductor wafer W is then taken out of the CMP apparatus 300 .
  • a first polishing step in which the face of the semiconductor wafer W is kept in parallel with the face of the turntable 10 is followed, without a break, by a second polishing step in which the face of the semiconductor wafer W is kept not in parallel with the face of the turntable 10 .
  • the polishing rate in the circumferential area of the semiconductor wafer W is higher in the second polishing step than in the first polishing step.
  • the polishing rate across the face of the semiconductor wafer W can minutely be adjusted by changing the angle between the first rotation axis RA 1 and the second rotation axis RA 2 (the angle ⁇ in FIG. 3 ) during polishing.
  • the apparatus and the method thus further facilitate uniform polishing of the face of the semiconductor wafer W.
  • the angle ⁇ between the first rotation axis RA 1 and the second rotation axis RA 2 is changed without a break during polishing, the throughput in the polishing process is improved compared to the case with a break between two polishing steps, for example.
  • the angle ⁇ between the first rotation axis RA 1 and the second rotation axis RA 2 is changed from an angle ⁇ of 0 ⁇ in the first polishing step to an angle ⁇ more than 0° in the second polishing step.
  • the CMP method is not limited to this example.
  • the method may include a first polishing step with an angle ⁇ more than 0° and a second polishing step with an angle ⁇ of 0°.
  • the method may include a first polishing step with an angle ⁇ more than 0° and a second polishing step with an angle ⁇ more than the angle ⁇ of the first polishing step.
  • the method may include a third polishing step with an angle ⁇ different from those of first and second polishing steps.
  • the method may include a first polishing step with an angle ⁇ , a second polishing step with an angle ⁇ more than the angle ⁇ of the first polishing step, and a third polishing step with an angle ⁇ less than the angle ⁇ of the second polishing step.
  • the third embodiment provides the polishing apparatus and the polishing method that can adjust the polishing rate across the face of the semiconductor wafer W by keeping the face of the semiconductor wafer W not in parallel with the face of the turntable 10 , as in the first embodiment.
  • the apparatus and the method thus enable uniform polishing of the face of the semiconductor wafer W.
  • the apparatus with the control unit enables minute adjustment of the polishing rate across the face of the semiconductor wafer W.
  • the apparatus and the method thus further facilitate uniform polishing of the face of the semiconductor wafer W.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
US16/542,631 2019-03-20 2019-08-16 Polishing apparatus and polishing method Abandoned US20200298365A1 (en)

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JP2019052786A JP2020151806A (ja) 2019-03-20 2019-03-20 研磨装置及び研磨方法
JP2019-052786 2019-03-20

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CN114473846A (zh) * 2020-11-11 2022-05-13 中国科学院微电子研究所 晶片研磨装置

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WO2021177350A1 (ja) 2020-03-04 2021-09-10 デクセリアルズ株式会社 光学積層体、物品、光学積層体の製造方法
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