US20200287100A1 - Light-emitting diode package structure and method for manufacturing the same - Google Patents
Light-emitting diode package structure and method for manufacturing the same Download PDFInfo
- Publication number
- US20200287100A1 US20200287100A1 US16/291,174 US201916291174A US2020287100A1 US 20200287100 A1 US20200287100 A1 US 20200287100A1 US 201916291174 A US201916291174 A US 201916291174A US 2020287100 A1 US2020287100 A1 US 2020287100A1
- Authority
- US
- United States
- Prior art keywords
- phosphine
- light
- package structure
- led package
- gallium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Y10S977/70—Nanostructure
- Y10S977/724—Devices having flexible or movable element
- Y10S977/731—Devices having flexible or movable element formed from a single atom, molecule, or cluster
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/81—Of specified metal or metal alloy composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/827—Nanostructure formed from hybrid organic/inorganic semiconductor compositions
- Y10S977/83—Inorganic core or cluster coated with organic or biological shell
Definitions
- the present disclosure in general relates to the field of light-emitting diode (LED) devices. More particularly, the present disclosure relates to an LED package structure, which comprises a plurality of composite fluorescent gold nanoclusters serving as wavelength-convertible materials.
- White light-emitting diodes are a relatively recent innovation resulted from a decade search of an improved LED useful for various displaying devices.
- white LEDs are constructed using wavelength-convertible materials, which can absorb radiation emitted from the LED and re-emit radiation in a different wavelength (i.e., color).
- U.S. Pat. No. 5,998,925 teaches white LEDs comprising one or more phosphor materials capable of converting the wavelength of its light source to light in another desired color.
- an LED chip or die emits blue light, in which a portion of the blue light is absorbed by phosphors that re-emit yellow light or any combination of green, red and yellow lights.
- the portion of the blue light not absorbed by the phosphors may be combined with the light emitted from the phosphors thereby gives a nearly white light in the human eyes.
- the wavelength-convertible materials in white LEDs are phosphors of transition-metal or rare-metal—are not only expensive, but are also potential environmental hazards.
- the correlated color temperature (CCT) of a white light-emitting device often varies across the surface of the device due to the non-uniformity accumulation and/or distribution of the phosphor materials across the LED chip, therefore deteriorates the light extraction efficiency and produces undesirable color rendering property for light emitting devices.
- the present disclosure aims to provide an improved white light-emitting diode (LED) package structure, and a method for manufacturing the same by employing gold nanoclusters as a wavelength-convertible material, so that the thus produced LED can emit a desired wavelength with a desired CCT.
- LED white light-emitting diode
- the present disclosure is directed to a LED package structure.
- the LED package structure comprises a substrate, and a light-emitting unit disposed on the substrate.
- the light-emitting unit comprises in its structure, a gallium nitride-based semiconductor, and a polymeric layer encapsulating the gallium nitride-based semiconductor.
- the polymeric layer comprises a resin and at least one composite fluorescent gold nanocluster dispersed therein.
- Each composite fluorescent gold nanocluster comprises a gold nanocluster, and a capping layer encapsulating at least a portion of the outer surface of the gold nanocluster.
- the capping layer is composed of a matrix made of a benzene-based compound, and a plurality of phosphine-based compounds distributed across the matrix.
- the gallium nitride-based semiconductor is configured to emit a light having a wavelength ranging from 395 nm to 495 nm.
- the gallium nitride-based semiconductor is configured to emit a light having a wavelength that is shorter than 395 nm.
- the polymeric layer further comprises a plurality of luminescent carbon nanoparticle dispersed in the resin and may respectively emit a light having a wavelength ranging from 400 nm to 500 nm.
- the benzene-based compound is selected from the group consisting of, benzene, alkylbenzene, halobenzene, phenol, benzoic acid, acetophenone, methyl benzoate, anisole, aniline, nitrobenzene, benzonitrile, benzamide, benzenesulfonic acid, naphthalene, and anthracene.
- the alkylbenzene may be toluene, cumene, ethylbenzene, styrene, or xylene; and the halobenzene may be fluorobenzene, chlorobenzene, bromobenzene, or iodobenzene.
- the benzene-based compound is toluene.
- the plurality of phosphine-based compounds is selected from the group consisting of, phosphine, phosphine oxide, phosphonium, diphosphine, triphosphine, alkyl phosphine, cycloalkyl phosphine, aryl phosphine, aryl phosphine oxide, phenyl phosphine, bidentate phosphine, silicone derivative of phosphine, siloxane or polysilane derivative of phosphine, and olefinic phosphine.
- the phosphine-based compound is alkyl phosphine, such as trioctylphosphine (TOP).
- TOP trioctylphosphine
- the phosphine-based compound is aryl phosphine oxide, such as trioctylphosphine oxide (TOPO).
- TOPO trioctylphosphine oxide
- the phosphine-based compound is phenyl phosphine, such as triphenylphosphine (TPP).
- the present disclosure pertains to a method for producing the LED package structure.
- the present method comprises: (a) providing a substrate; (b) electrically connecting a gallium-nitride based semiconductor onto the substrate; (c) overlaying the gallium nitride-based semiconductor with a slurry comprising a resin and a plurality of composite fluorescent gold nanoclusters; and (d) curing the slurry overlaid on the gallium-based semiconductor for a sufficient time to form a solidified polymeric layer, thereby creates the LED package structure.
- each composite fluorescent gold nanocluster comprises a gold nanocluster, and a capping layer encapsulating at least a portion of an outer surface of the gold nanocluster.
- the capping layer is composed of a matrix made of a benzene-based compound, and a plurality of phosphine-based compounds distributed across the matrix.
- the gallium nitride-based semiconductor is configured to emit a light having a wavelength ranging from 395 nm to 495 nm.
- the gallium nitride-based semiconductor is configured to emit a light having a wavelength that is shorter than 395 nm.
- the slurry in the step (c) further comprises a plurality of luminescent carbon nanoparticles, which are dispersed in the resin and emit a light of a wavelength ranging from 400 nm to 500 nm.
- the benzene-based compound is selected from the group consisting of benzene, alkylbenzene, halobenzene, phenol, benzoic acid, acetophenone, methyl benzoate, anisole, aniline, nitrobenzene, benzonitrile, benzamide, benzenesulfonic acid, naphthalene, and anthracene.
- the alkylbenzene is toluene, cumene, ethylbenzene, styrene, or xylene; and the halobenzene is fluorobenzene, chlorobenzene, bromobenzene, or iodobenzene.
- the benzene-based compound is toluene.
- the plurality of phosphine-based compounds is selected from the group consisting of phosphine, phosphine oxide, phosphonium, diphosphine, triphosphine, alkyl phosphine, cycloalkyl phosphine, aryl phosphine, aryl phosphine oxide, phenyl phosphine, bidentate phosphine, silicone derivative of phosphine, siloxane or polysilane derivative of phosphine, and olefinic phosphine.
- the phosphine-based compound is aryl phosphine oxide, such as trioctylphosphine oxide (TOPO).
- the phosphine-based compound is alkyl phosphine, such as trioctylphosphine (TOP).
- the phosphine-based compound is phenyl phosphine, such as triphenylphosphine (TPP).
- the thus-produced LED package structure comprises a light-emitting unit, which has wavelength-convertible composite fluorescent gold nanoclusters evenly distributed therein.
- the fluorescence intensity and color temperature of the present LED may vary with the concentration and volume of the present composite fluorescent gold nanoclusters.
- the present method is characterized in not using any reducing agent(s) in the process of manufacturing the present composite fluorescent gold nanocluster; accordingly, the present LED package structure is free from any toxicity that might be caused by or associated with the reducing agent(s), thereby confers the safety of the present LED package structure.
- FIG. 1A is a cross-section view of an exemplary LED package structure 100 according to one embodiment of the present disclosure
- FIG. 1B is a schematic diagram illustrating a composite fluorescent gold nanocluster 110 in FIG. 1A ;
- FIG. 2 is a cross-section view of an exemplary LED package structure 200 according to another embodiment of the present disclosure
- FIG. 3 provides a fluorescence spectrum of the composite fluorescent gold nanoclusters encapsulated in a macromolecular solution according to one example
- FIGS. 4A-4B respectively provide a fluorescence spectrum and the emission properties (CCT and light rendering) of the LED package structure according to one example
- FIGS. 5A-5B respectively provide a fluorescence spectrum and the emission properties (CCT and light rendering) of the LED package structure according to one example
- FIGS. 6A-6B respectively provide a fluorescence spectrum and the emission properties (CCT and light rendering) of the LED package structure according to one example
- FIG. 7 is fluorescent spectra showing the comparison among the present LED package structures and the conventional one
- FIG. 8 provides a fluorescence spectrum of the luminescent carbon nanoparticles encapsulated in a macromolecular solution according to one example.
- FIG. 9 provides a fluorescence spectrum of the LED package structure according to one example.
- wavelength-convertible refers to the ability of a certain material to absorb wavelengths of one emission color and convert it to a different wavelength of another emission color, and thereby generate a desired emission color.
- nanoclusters refers to a collection of small numbers (e.g., 2 to hundreds of atoms) of noble metal atoms (e.g., gold or silver atoms) with physical sizes close to the Fermi wavelength of an electron.
- noble metal atoms e.g., gold or silver atoms
- nanoclusters may have diameters in the range of about 0.1 to about 3 nm.
- Nanoclusters used in the present disclosure are fluorescent gold nanoclusters, which indicates the ability to emit light of a wavelength (emission wavelength) when exposed to light of another wavelength (excitation wavelength).
- fluorescence or “fluorescent,” as used herein, refers to a physical phenomenon based upon the ability of certain compounds to absorb and emit light at different wavelengths. The absorption of light (photons) at a first wavelength is followed by the emission of photons at a second wavelength and different energy.
- shift refers to the shifting of the point of maximum amplitude of one or more peaks in a fluorescence emission profile to a longer wavelength. A shift may occur in any part of the electromagnetic spectrum.
- phosphine-based compound refers to a chemical compound that has at least one phosphine group (e.g., in the form of phosphine, phosphine oxide, phosphonium, or phenylphosphine).
- the phosphine-based compounds include primary phosphines, secondary phosphines, and tertiary phosphines, as those known to person having ordinary skill in the art. These phosphine-based compounds share same chemical properties, such as an intense penetrating odor and high oxidation ability.
- This invention aims at providing an improved LED with excellent color rendering property and desired color temperature.
- YAG yttrium-aluminum-garnet
- the present invention also aims at providing an improved LED, in which a novel wavelength-convertible material made by gold nanoclusters is employed to address the above issues of YAG fluorescent materials.
- the first aspect of the present disclosure is directed to a LED package structure, especially a white LED package structure. References are made to FIGS. 1A and 1B .
- the LED package structure 100 comprises a substrate 102 , and a light-emitting unit 104 constructed on the substrate 102 .
- a substrate having pre-deposited layers of materials e.g., nitride or oxides commonly used in LED industry (e.g., aluminum oxide substrate and the like) may be used for constructing the present LED package structure.
- a recessed portion 1022 a positive metal terminal 1024 (serving as a positive electrode), and a negative metal terminal 1026 (serving as a negative electrode) were respectively created on the substrate 102 via any method known in the art (e.g., photoresist etching).
- a gallium nitride-based semiconductor 1042 having a p-type electrode and an n-type electrode is then disposed in the recessed portion 1022 and on top of the positive metal terminal 1024 .
- the p-type and n-type electrodes (not depicted in FIG.
- the gallium nitride-based semiconductor 1042 may include a material selected from the group consisting of indium gallium nitride (InGaN), gallium nitride (GaN), aluminum gallium nitride (AlGaN), and a combination thereof. It should be noted that the gallium nitride-based semiconductor 1042 illustratively depicted in FIG. 1A is exemplified as a chip type, but is not limited thereto.
- a slurry comprises a resin and at least one composite fluorescent gold nanocluster 110 is poured into the recessed portion 1022 of the substrate 102 until the gallium nitride-based semiconductor 1042 is completely submerged therein, after curing, the slurry is solidified and forms a polymeric layer 1046 that encapsulates the gallium nitride-based semiconductor 1042 therein, thereby creates a light emitting unit 104 .
- the slurry is a mixture of resins, preferably light-curable resins; and a plurality of composite fluorescent gold nanoclusters 110 .
- the composite fluorescent gold nanoclusters 110 are suspended in a macromolecular solution, then are mixed with the resin in a volume ratio from 1:1 to 1:32, preferably is 1:1. After curing the slurry, the plurality of composite fluorescent gold nanoclusters 110 are spread and dispersed in the resin, therefore forming a solidified polymeric layer 1046 , as illustrated in FIG. 1A .
- the light-curable resin examples include, but are not limited to, 1-hydroxycyclohexyl phenyl ketone; 2-benzyl-2-(dimethylamino)-4′-morpholinobutyrophenone; 2-hydroxy-2-methylpropiophenone (HMPP); 2,4,6-trimethylbenzoyl diphenylphosphine oxide (Lucirin® TPO); 50-50 Blend of HMPP and TPO; 2-methyl-4′-(methylthio)-2-morpholinopropiophenone (MMMP); 2,2-dimethoxy-2-phenyl acetophenone (BDK); or 1-hydroxy-2-butanone.
- the light-curable resin is HMPP.
- the macromolecular solution is a gel or slurry phase formed by dissolving a polymer in a proper solvent (e.g., water, alcohols, and the like).
- a proper solvent e.g., water, alcohols, and the like.
- polymers include, but is not limited to, poly(ethylene glycol) diacrylate (PEGDA); poly(ethylene glycol) dimethacrylate; polyvinylpyrrolidone (PVP), which generally refers to a polymer containing vinyl pyrrolidone (also referred to as N-vinylpyrrolidone, N-vinyl-2-pyrrolidione and N-vinyl-2-pyrrolidinone) as a monomeric unit; poly(N-isopropyl acrylamide); polyvinylalcohol (PVA); and polyepoxysuccinic acid (PESA) and its salt derivatives.
- the macromolecular solution is a PEGDA solution (i.e., PEGDA in water
- FIG. 1B is a schematic view of a composite fluorescent gold nanocluster 110 according to one embodiment of the present disclosure.
- the composite fluorescent gold nanocluster 110 comprises a gold nanocluster 1110 and a capping layer 1120 .
- the gold nanocluster 1110 is composed by multiple gold atoms 1110 ′.
- the gold nanocluster 1110 in FIG. 1B is depicted to compose of a specific number of gold atoms 1110 ′, yet embodiments of the present invention are not limited thereto; rather, the gold nanocluster 1110 may be an aggregation of any suitable number in the range of several to dozens of gold atoms 1110 ′.
- the gold nanoclusters 1110 as described herein comprise 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, or 50 atoms.
- the gold nanoclusters 1110 comprise 2-30 atoms, 5-25 atoms, 5-20 atoms, or 5-15 atoms.
- the diameter of the gold nanocluster 1110 is about 0.1 to about 3 nm; preferably less than about 2 nm.
- the capping layer 1120 comprises a matrix 1122 made of a benzene-based compound; and a plurality of phosphine-based compounds 1124 distributed across the matrix 1122 . As illustrated in FIG. 1B , the capping layer 1120 encapsulates the entire gold nanocluster 1110 . In other alternative embodiments, the capping layer 1120 encapsulates or covers just a portion of the outer surface of the gold nanocluster 1110 , or several portions of the outer surface of the gold nanocluster 1110 .
- the composite fluorescent gold nanoclusters 110 of the present disclosure may be produced by various methods. Each methods preferably comprises at least the following steps: (a) mixing gold(III) chloride (AuCl 3 ) and a benzene-based compound at a molar ratio of about 1:0.5 to 1:5 to produce a first fluorescent gold nanoclusters; (b) treating the first fluorescent gold nanoclusters with an energy source selected from the group consisting of UV, acoustic, heat, microwave and a combination thereof to produce a second fluorescent gold nanoclusters; and (c) modifying the second fluorescent gold nanoclusters of the step (b) with a phosphine-based compound to produce the composite fluorescent gold nanoclusters of the present disclosure. It is worth noting that no reducing agent is required in this preferable method.
- the benzene-based compound examples include, but are not limited to, benzene, alkylbenzene (such as, toluene, cumene, ethylbenzene, styrene, and xylene), halobenzene (e.g., fluorobenzene, chlorobenzene, bromobenzene, and iodobenzene), oxygen-containing benzene (e.g., phenol, benzoic acid, acetophenone, methyl benzoate, and anisole), nitrogen-containing benzene (e.g., aniline, nitrobenzene, benzonitrile, and benzamide), sulfur-containing benzene (e.g., benzenesulfonic acid), or polyaromatic (e.g., naphthalene, and anthracene).
- the benzene-based compound is toluene.
- phosphine-based compound is known to person having ordinary skill in the art
- suitable examples of phosphine-based compound include, but are not limited to, phosphine, phosphine oxide, phosphonium, diphosphine, triphosphine, alkyl phosphine, cycloalkyl phosphine, aryl phosphine, aryl phosphine oxide, phenyl phosphine, bidentate phosphine, silicone derivative of phosphine, siloxane or polysilane derivative of phosphine, and olefinic phosphine.
- the phosphine-based compound is alkyl phosphine, such as trioctylphosphine (TOP).
- TOP trioctylphosphine
- the phosphine-based compound is aryl phosphine oxide such as trioctylphosphine oxide (TOPO).
- TOPO trioctylphosphine oxide
- the phosphine-based compound is phenyl phosphine, such as triphenylphosphine (TPP).
- the light-emitting unit 104 of the LED package structure 100 is configured to emit lights with pre-determined wavelengths depending on doping materials contained therein.
- the composite fluorescent gold nanoclusters 110 are configured to emit a first light in a first wavelength, and to absorb at least a portion of the light emitted from the gallium nitride-based semiconductor 1042 , and emits a second light in a second wavelength, in which the first and second wavelengths are different.
- the un-absorbed light emitted from the gallium nitride-based semiconductors 1042 and the second light emitted by the composite fluorescent gold nanoclusters 110 would combine with each other to produce a desired light color (e.g., white light).
- the original wavelength of the composite fluorescent gold nanocluster 110 is between about 500 nm to about 590 nm, such as 500, 505, 510, 515, 520, 525, 530, 535, 540, 545, 550, 555, 560, 565, 570, 575, 580, 585, and 590 nm.
- the converted wavelength of the second light after excited by the light-emitting unit 104 is between about 550 nm to about 680 nm, such as 550, 555, 560, 565, 570, 575, 580, 585, 590, 595, 600, 605, 610, 615, 620, 625, 630, 635, 640, 645, 650, 655, 660, 665, 670, 675, and 680 nm.
- the second peak emission is at about 550 nm to 600 nm.
- the wavelength of the second peak emission is at about 600 to 675 nm (i.e., orange and/or red lights).
- the gallium nitride-based semiconductors 1042 of the light-emitted unit 104 is InGaN/GaN semiconductors that emits a light having a wavelength between 395 nm to 495 nm (a.k.a., a blue light).
- the composite fluorescent gold nanoclusters 110 convert the emission light from the original wavelength between 570 nm to 590 nm to a wavelength between 600 nm to 675 nm by absorbing the blue light emitted from the gallium nitride-based semiconductors 1042 .
- the LED package structure 100 eventually emits a white light as a result of color addition of the original blue light emitted from the gallium nitride-based semiconductors 1042 , and the first light and the re-emitted second light respectively generated from the composite fluorescent gold nanoclusters 110 before and after wavelength conversion.
- FIG. 2 is a schematic drawing of an LED package structure 200 in according to another embodiment of the present disclosure.
- the LED package structure 200 emits a white light, and is characterized in having the composite fluorescent gold nanoclusters 210 as the wavelength-convertible materials.
- the configuration of the LED package structure 200 is similar to that of the LED package structure 100 , and is constructed in similar manner except a GaN/AlGaN semiconductor emitting a wavelength shorter than 395 nm is used, and the polymeric layer encapsulating the GaN/AlGaN semiconductor further comprises a plurality of luminescent carbon nanoparticles 220 dispersed in the resin.
- the LED package structure 200 comprise in its structure, a substrate 202 ; and a light emitting unit 204 , which comprises a GaN/AlGaN semiconductor 2042 and a polymeric layer 2046 encapsulating the GaN/AlGaN semiconductor 2042 . Similar to the process described above for constructing the LED package structure 100 of FIG.
- a positive metal terminal 2024 and a negative metal terminal 2026 respectively serving as the positive and negative electrodes are constructed on the substrate 202 ; then, the GaN/AlGaN semiconductor 2042 is disposed in a recessed portion 2022 of the substrate 202 , and on top of the positive metal terminal 2024 ; the GaN/AlGaN semiconductor 2042 is electronically connected to the positive and negative metal terminals 2024 , 2026 via two conductive wires 2044 .
- a polymeric layer 2046 encapsulating the GaN/AlGaN semiconductor 2042 therein is formed in the recessed portion 2022 thereby creating the light emitting unit 204 .
- the GaN/AlGaN semiconductor emits a wavelength shorter than 395 nm, preferably in the range from about 200 nm to 395 nm. In other words, the GaN/AlGaN semiconductor emits an ultraviolet (UV) light.
- the polymeric layer 2046 in this embodiment further comprises a plurality of luminescent carbon nanoparticles 220 dispersed in the resin.
- the polymeric layer 2046 is formed by filling the recessed portion 2022 of the substrate 202 with a slurry mixture of light-curable resins, at least one composite fluorescent gold nanoclusters 210 and a plurality of luminescent carbon nanoparticles 220 .
- the composite fluorescent gold nanoclusters and the luminescent carbon nanoparticles are mixed in a volume ratio of 1:10 to 10:1, preferably, 1:1.
- the slurry mixture is solidified into the polymeric layer 2046 , with the composite fluorescent gold nanoclusters 210 and the luminescent carbon nanoparticles 220 dispersed in the resin, as illustrated in FIG. 2 .
- the luminescent carbon nanoparticles 220 can be commercially available or can be synthesized at the bench in accordance with any method known in the art. According to the present disclosure, the luminescent carbon nanoparticles 220 are exemplary produced from carbon sources such as a mixture of carboxylic acids and long-chain hydrocarbon alkenes but may be varied according to practical needs. In some embodiments of the present disclosure, the carboxylic acid is citric acid and the long-chain hydrocarbon alkene is octadecene. Generally, the diameter of the luminescent carbon nanoparticle 220 is about 0.1 to about 3 nm; preferably is about 2.5 to 2.8 nm.
- the GaN/AlGaN semiconductor emits a wavelength shorter than 395 nm; and the luminescent carbon nanoparticles 220 respectively emit a blue light having a wavelength ranging from 400 nm to 500 nm.
- the original emission wavelength of the composite fluorescent gold nanoclusters 210 is converted from about 500-590 nm to about 550 nm to 600 nm.
- the LED package structure 200 eventually emits a white light, which is the summation of blue light and yellow light respectively emitted from the plurality of luminescent carbon nanoparticles 220 and the composite fluorescent gold nanoclusters 210 dispersed in the polymeric layer 2046 .
- the LED package structures of the present disclosure provide improved light-emitting properties due to the composite fluorescent gold nanoclusters, which possess at least following advantages: (1) the surface modification with phosphine-based compounds for the composite fluorescent gold nanoclusters increase the solubility thereof in the macromolecular solution, allowing the composite fluorescent gold nanoclusters to disperse more uniformly in the slurry; (2) since the fluorescence intensity of the wavelength-convertible materials is stable, the present LED package structure has excellent white color rendering property; (3) the fluorescence intensity of the composite fluorescent gold nanoclusters also increases in a correlation with the level of concentration thereof because of modification with benzene-based and phosphine-based compounds; and (4) the present fluorescent gold nanocluster are biocompatible and free from any toxicity since the manufacturing process of which does not require the use of any reducing agent, thereby enhancing the safety usage of the present LED package structures.
- the UV-radiated supernatant (containing AuCl 3 in a concentration of 1 mg/mL) was mixed with a toluene solution containing phosphine-based compound, e.g., TOP (200 mM), the thus produced composite fluorescent gold nanoclusters in toluene was stored as a stock until further use.
- a toluene solution containing phosphine-based compound e.g., TOP (200 mM
- the composite fluorescent gold nanoclusters encompassing TOP is abbreviated as CFGN-TOPs hereinafter.
- the primary concentration of the CFGN-TOPs in the stock is defined as a stock concentration, which is denoted by 1-fold or 1 ⁇ .
- Citric acid (0.8 g) and glycine (0.2 g) were respectively added into a nitric acid solution (which was prepared by mixing 1 mL nitric acid (0.5M) with 1 mL H 2 O), the mixture was then subjected to ultrasonic oscillation until all matters were completely dissolved.
- the thus produced solution was added into an oil solution (oleylamine (3 ml) and octadecene (7 ml)), and the mixture was ultrasonic oscillated for 15 seconds to form milky micelles, and continued to stir (at 700 rpm) for 10 minutes.
- the product was heated at 200° C.
- the toluene solution contacting composite fluorescent gold nanoclusters (CFGN-TOPs) obtained from Example 1.1 were dried by an evaporator.
- the composite fluorescent gold nanoclusters were re-suspended in a slurry of light-curable resin (HMPP) and PEGDA polymer in a pre-determined concentration (i.e., 0.59 ⁇ to 1 ⁇ ) or volume (i.e., 10-30 ⁇ L).
- HMPP light-curable resin
- PEGDA polymer in a pre-determined concentration (i.e., 0.59 ⁇ to 1 ⁇ ) or volume (i.e., 10-30 ⁇ L).
- the slurry was overlaid onto a substrate where a blue color light-emitting chip disposed, the slurry was cured for 60-90 seconds to form a solidified polymeric layer encapsulating the blue color light-emitting chip therein thereby producing the desired white light LED package structure.
- the composite fluorescent gold nanoclusters of Example 1.1 and the luminescent carbon nanoparticles of Example 1.2 were mix in a volume ratio of 1:10 to 10:1 and were dried by an evaporator, then were re-suspended in a slurry of light-curable resin (HMPP) and PEGDA polymer in a determined concentration or volume (e.g., in a volume ratio of 1:1).
- HMPP light-curable resin
- PEGDA polymer a determined concentration or volume (e.g., in a volume ratio of 1:1).
- the slurry was overlaid onto a substrate where a UV light-emitting chip was disposed, the slurry was cured for 60-90 seconds to form a solidified polymeric layer encapsulating the UV light-emitting chip therein thereby producing the desired white light LED package structure.
- the function of the white light LED package structure (i.e., the light-emitting property) was evaluated by the degree of dispersion of composite fluorescent gold nanoclusters in macromolecular solution, the amount of phosphine-based compound in the composite fluorescent gold nanoclusters.
- Light performance of the present white LED package structures was compared with that of a conventional LED package structure, in which the wavelength-convertible material was phosphor Ce 3+ -doped Y 3 Al 5 O 12 (YAG:Ce 3+ ).
- the results are depicted in FIG. 7 and are summarized in Table 1. It was found that the fluorescent intensities emitted from the present wavelength-convertible materials are relatively stronger as compared with that of a LED package structure comprising phosphors. Further, the white LED package structures of the present disclosure possessed greater light rendering property (Ra) than that of a conventional LED package structure in which phosphor materials were used.
- Example 2.1 to verify the dispersibility, different concentrations (0.5 ⁇ , 1 ⁇ and 2 ⁇ ) of the stock luminescent carbon nanoparticles in macromolecular solutions were mixed with PEGDA solution, and fluorescence intensity emitted thereform was measured. It can be observed that the luminescent carbon nanoparticles distribute uniformly across the PEGDA film regardless concentrations thereof; in addition, when emitted by a 350 nm wavelength, the peak emission of the luminescent carbon nanoparticles is centralized about 450 nm ( FIG. 8 ). These results indicated that the uniformity of the distributed luminescent carbon nanoparticles is high and desirable.
- Example 1.1 The CFGN-TOPs of Example 1.1 and the luminescent carbon nanoparticles obtained from Example 1.2 were mix in a ratio of 1:1 and were encapsulated within the UV light-emitting chip by the method of Example 1.4. After encapsulation, the LED package structure was powered by 25 mA current and subjected to fluorescent intensity measurement using fluorescence photoluminescence spectrophotometer. Results are depicted in FIG. 9 .
- the emission profile of FIG. 9 represents the fluorescent emission was shifted and converted to visible spectrum, which eventually emitting as a white light.
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Abstract
Description
- The present disclosure in general relates to the field of light-emitting diode (LED) devices. More particularly, the present disclosure relates to an LED package structure, which comprises a plurality of composite fluorescent gold nanoclusters serving as wavelength-convertible materials.
- White light-emitting diodes (white LEDs) are a relatively recent innovation resulted from a decade search of an improved LED useful for various displaying devices. In general, white LEDs are constructed using wavelength-convertible materials, which can absorb radiation emitted from the LED and re-emit radiation in a different wavelength (i.e., color). U.S. Pat. No. 5,998,925 teaches white LEDs comprising one or more phosphor materials capable of converting the wavelength of its light source to light in another desired color. Typically, an LED chip or die emits blue light, in which a portion of the blue light is absorbed by phosphors that re-emit yellow light or any combination of green, red and yellow lights. In the meantime, the portion of the blue light not absorbed by the phosphors may be combined with the light emitted from the phosphors thereby gives a nearly white light in the human eyes.
- Nevertheless, the wavelength-convertible materials in white LEDs—often are phosphors of transition-metal or rare-metal—are not only expensive, but are also potential environmental hazards. In addition, the correlated color temperature (CCT) of a white light-emitting device often varies across the surface of the device due to the non-uniformity accumulation and/or distribution of the phosphor materials across the LED chip, therefore deteriorates the light extraction efficiency and produces undesirable color rendering property for light emitting devices.
- In view of the foregoing, there exists in the related art a need for an improved white LED and a method producing the same by utilizing a novel material to convert wavelengths.
- The following presents a simplified summary of the disclosure in order to provide a basic understanding to the reader. This summary is not an extensive overview of the disclosure and it does not identify key/critical elements of the present invention or delineate the scope of the present invention. Its sole purpose is to present some concepts disclosed herein in a simplified form as a prelude to the more detailed description that is presented later.
- As embodied and broadly described herein, the present disclosure aims to provide an improved white light-emitting diode (LED) package structure, and a method for manufacturing the same by employing gold nanoclusters as a wavelength-convertible material, so that the thus produced LED can emit a desired wavelength with a desired CCT.
- In one aspect, the present disclosure is directed to a LED package structure. According to various embodiments of the present disclosure, the LED package structure comprises a substrate, and a light-emitting unit disposed on the substrate. The light-emitting unit comprises in its structure, a gallium nitride-based semiconductor, and a polymeric layer encapsulating the gallium nitride-based semiconductor. The polymeric layer comprises a resin and at least one composite fluorescent gold nanocluster dispersed therein. Each composite fluorescent gold nanocluster comprises a gold nanocluster, and a capping layer encapsulating at least a portion of the outer surface of the gold nanocluster. The capping layer is composed of a matrix made of a benzene-based compound, and a plurality of phosphine-based compounds distributed across the matrix.
- In some optional embodiments, the gallium nitride-based semiconductor is configured to emit a light having a wavelength ranging from 395 nm to 495 nm.
- In some optional embodiments, the gallium nitride-based semiconductor is configured to emit a light having a wavelength that is shorter than 395 nm. In such case, the polymeric layer further comprises a plurality of luminescent carbon nanoparticle dispersed in the resin and may respectively emit a light having a wavelength ranging from 400 nm to 500 nm.
- According to embodiments of the present disclosure, the benzene-based compound is selected from the group consisting of, benzene, alkylbenzene, halobenzene, phenol, benzoic acid, acetophenone, methyl benzoate, anisole, aniline, nitrobenzene, benzonitrile, benzamide, benzenesulfonic acid, naphthalene, and anthracene. For instance, the alkylbenzene may be toluene, cumene, ethylbenzene, styrene, or xylene; and the halobenzene may be fluorobenzene, chlorobenzene, bromobenzene, or iodobenzene. According to certain examples of the present disclosure, the benzene-based compound is toluene.
- According to embodiments of the present disclosure, the plurality of phosphine-based compounds is selected from the group consisting of, phosphine, phosphine oxide, phosphonium, diphosphine, triphosphine, alkyl phosphine, cycloalkyl phosphine, aryl phosphine, aryl phosphine oxide, phenyl phosphine, bidentate phosphine, silicone derivative of phosphine, siloxane or polysilane derivative of phosphine, and olefinic phosphine. In certain examples, the phosphine-based compound is alkyl phosphine, such as trioctylphosphine (TOP). In certain examples, the phosphine-based compound is aryl phosphine oxide, such as trioctylphosphine oxide (TOPO). In alternative examples, the phosphine-based compound is phenyl phosphine, such as triphenylphosphine (TPP).
- In another aspect, the present disclosure pertains to a method for producing the LED package structure. The present method comprises: (a) providing a substrate; (b) electrically connecting a gallium-nitride based semiconductor onto the substrate; (c) overlaying the gallium nitride-based semiconductor with a slurry comprising a resin and a plurality of composite fluorescent gold nanoclusters; and (d) curing the slurry overlaid on the gallium-based semiconductor for a sufficient time to form a solidified polymeric layer, thereby creates the LED package structure. In addition, each composite fluorescent gold nanocluster comprises a gold nanocluster, and a capping layer encapsulating at least a portion of an outer surface of the gold nanocluster. The capping layer is composed of a matrix made of a benzene-based compound, and a plurality of phosphine-based compounds distributed across the matrix.
- In some optional embodiments, the gallium nitride-based semiconductor is configured to emit a light having a wavelength ranging from 395 nm to 495 nm.
- In some optional embodiments, the gallium nitride-based semiconductor is configured to emit a light having a wavelength that is shorter than 395 nm. In these embodiments, the slurry in the step (c) further comprises a plurality of luminescent carbon nanoparticles, which are dispersed in the resin and emit a light of a wavelength ranging from 400 nm to 500 nm.
- According to embodiments of the present disclosure, the benzene-based compound is selected from the group consisting of benzene, alkylbenzene, halobenzene, phenol, benzoic acid, acetophenone, methyl benzoate, anisole, aniline, nitrobenzene, benzonitrile, benzamide, benzenesulfonic acid, naphthalene, and anthracene.
- Preferably, the alkylbenzene is toluene, cumene, ethylbenzene, styrene, or xylene; and the halobenzene is fluorobenzene, chlorobenzene, bromobenzene, or iodobenzene. According to certain working examples of the present disclosure, the benzene-based compound is toluene.
- According to embodiments of the present disclosure, the plurality of phosphine-based compounds is selected from the group consisting of phosphine, phosphine oxide, phosphonium, diphosphine, triphosphine, alkyl phosphine, cycloalkyl phosphine, aryl phosphine, aryl phosphine oxide, phenyl phosphine, bidentate phosphine, silicone derivative of phosphine, siloxane or polysilane derivative of phosphine, and olefinic phosphine. In certain examples, the phosphine-based compound is aryl phosphine oxide, such as trioctylphosphine oxide (TOPO). In certain examples, the phosphine-based compound is alkyl phosphine, such as trioctylphosphine (TOP). Alternatively, the phosphine-based compound is phenyl phosphine, such as triphenylphosphine (TPP).
- By virtue of the above configuration, the thus-produced LED package structure comprises a light-emitting unit, which has wavelength-convertible composite fluorescent gold nanoclusters evenly distributed therein. As could be appreciated, the fluorescence intensity and color temperature of the present LED may vary with the concentration and volume of the present composite fluorescent gold nanoclusters.
- Furthermore, the present method is characterized in not using any reducing agent(s) in the process of manufacturing the present composite fluorescent gold nanocluster; accordingly, the present LED package structure is free from any toxicity that might be caused by or associated with the reducing agent(s), thereby confers the safety of the present LED package structure.
- Many of the attendant features and advantages of the present disclosure will becomes better understood with reference to the following detailed description considered in connection with the accompanying drawings.
- The present description will be better understood from the following detailed description read in light of the accompanying drawings, where:
-
FIG. 1A is a cross-section view of an exemplaryLED package structure 100 according to one embodiment of the present disclosure; andFIG. 1B is a schematic diagram illustrating a compositefluorescent gold nanocluster 110 inFIG. 1A ; -
FIG. 2 is a cross-section view of an exemplaryLED package structure 200 according to another embodiment of the present disclosure; -
FIG. 3 provides a fluorescence spectrum of the composite fluorescent gold nanoclusters encapsulated in a macromolecular solution according to one example; -
FIGS. 4A-4B respectively provide a fluorescence spectrum and the emission properties (CCT and light rendering) of the LED package structure according to one example; -
FIGS. 5A-5B respectively provide a fluorescence spectrum and the emission properties (CCT and light rendering) of the LED package structure according to one example; -
FIGS. 6A-6B respectively provide a fluorescence spectrum and the emission properties (CCT and light rendering) of the LED package structure according to one example; -
FIG. 7 is fluorescent spectra showing the comparison among the present LED package structures and the conventional one; -
FIG. 8 provides a fluorescence spectrum of the luminescent carbon nanoparticles encapsulated in a macromolecular solution according to one example; and -
FIG. 9 provides a fluorescence spectrum of the LED package structure according to one example. - In accordance with common practice, the various described features/elements are not drawn to scale but instead are drawn to best illustrate specific features/elements relevant to the present invention. Also, like reference numerals and designations in the various drawings are used to indicate like elements/parts.
- The detailed description provided below in connection with the appended drawings is intended as a description of the present examples and is not intended to represent the only forms in which the present example may be constructed or utilized. The description sets forth the functions of the example and the sequence of steps for constructing and operating the example. However, the same or equivalent functions and sequences may be accomplished by different examples.
- For convenience, certain terms employed in the specification, examples and appended claims are collected here. Unless otherwise defined herein, scientific, and technical terminologies employed in the present disclosure shall have the meanings that are commonly understood and used by one of ordinary skill in the art. Also, unless otherwise required by context, it will be understood that singular terms shall include plural forms of the same and plural terms shall include the singular. Specifically, as used herein and in the claims, the singular forms “a” and “an” include the plural reference unless the context clearly indicates otherwise. Also, as used herein and in the claims, the terms “at least one” and “one or more” have the same meaning and include one, two, three, or more.
- Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the invention are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in the respective testing measurements. Also, as used herein, the term “about” generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term “about” means within an acceptable standard error of the mean when considered by one of ordinary skill in the art. Other than in the operating/working examples, or unless otherwise expressly specified, all of the numerical ranges, amounts, values and percentages such as those for quantities of materials, durations of times, temperatures, operating conditions, ratios of amounts, and the likes thereof disclosed herein should be understood as modified in all instances by the term “about”. Accordingly, unless indicated to the contrary, the numerical parameters set forth in the present disclosure and attached claims are approximations that can vary as desired. At the very least, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques.
- The term “wavelength-convertible” used herein refers to the ability of a certain material to absorb wavelengths of one emission color and convert it to a different wavelength of another emission color, and thereby generate a desired emission color.
- The term “nanoclusters” used herein refers to a collection of small numbers (e.g., 2 to hundreds of atoms) of noble metal atoms (e.g., gold or silver atoms) with physical sizes close to the Fermi wavelength of an electron. Generally, nanoclusters (such as gold nanoclusters in the present disclosure) may have diameters in the range of about 0.1 to about 3 nm. Nanoclusters used in the present disclosure are fluorescent gold nanoclusters, which indicates the ability to emit light of a wavelength (emission wavelength) when exposed to light of another wavelength (excitation wavelength).
- The term “fluorescence” or “fluorescent,” as used herein, refers to a physical phenomenon based upon the ability of certain compounds to absorb and emit light at different wavelengths. The absorption of light (photons) at a first wavelength is followed by the emission of photons at a second wavelength and different energy. As used herein, the term “shift” refers to the shifting of the point of maximum amplitude of one or more peaks in a fluorescence emission profile to a longer wavelength. A shift may occur in any part of the electromagnetic spectrum.
- The term “phosphine-based compound” used herein refers to a chemical compound that has at least one phosphine group (e.g., in the form of phosphine, phosphine oxide, phosphonium, or phenylphosphine). The phosphine-based compounds include primary phosphines, secondary phosphines, and tertiary phosphines, as those known to person having ordinary skill in the art. These phosphine-based compounds share same chemical properties, such as an intense penetrating odor and high oxidation ability.
- This invention aims at providing an improved LED with excellent color rendering property and desired color temperature. Further, as yttrium-aluminum-garnet (YAG) fluorescent materials—a main material commonly used in manufacturing wavelength-converting phosphors of LEDs—are cytotoxic and may cause environmental pollution, thus the present invention also aims at providing an improved LED, in which a novel wavelength-convertible material made by gold nanoclusters is employed to address the above issues of YAG fluorescent materials.
- Accordingly, the first aspect of the present disclosure is directed to a LED package structure, especially a white LED package structure. References are made to
FIGS. 1A and 1B . - Referring to
FIG. 1A , which is a cross-section view of an exemplary LED package structure according to one embodiment of the present disclosure. TheLED package structure 100 comprises asubstrate 102, and a light-emittingunit 104 constructed on thesubstrate 102. To this purpose, a substrate having pre-deposited layers of materials (e.g., nitride or oxides) commonly used in LED industry (e.g., aluminum oxide substrate and the like) may be used for constructing the present LED package structure. Accordingly, a recessedportion 1022, a positive metal terminal 1024 (serving as a positive electrode), and a negative metal terminal 1026 (serving as a negative electrode) were respectively created on thesubstrate 102 via any method known in the art (e.g., photoresist etching). A gallium nitride-basedsemiconductor 1042 having a p-type electrode and an n-type electrode is then disposed in the recessedportion 1022 and on top of thepositive metal terminal 1024. The p-type and n-type electrodes (not depicted inFIG. 1A ) of the gallium nitride-basedsemiconductor 1042 are electrically connected to thepositive metal terminal 1024 and thenegative metal terminal 1026, respectively, by twoconductive wires 1044. In some embodiments, the gallium nitride-basedsemiconductor 1042 may include a material selected from the group consisting of indium gallium nitride (InGaN), gallium nitride (GaN), aluminum gallium nitride (AlGaN), and a combination thereof. It should be noted that the gallium nitride-basedsemiconductor 1042 illustratively depicted inFIG. 1A is exemplified as a chip type, but is not limited thereto. - Next, a slurry comprises a resin and at least one composite
fluorescent gold nanocluster 110 is poured into the recessedportion 1022 of thesubstrate 102 until the gallium nitride-basedsemiconductor 1042 is completely submerged therein, after curing, the slurry is solidified and forms apolymeric layer 1046 that encapsulates the gallium nitride-basedsemiconductor 1042 therein, thereby creates alight emitting unit 104. In some embodiments, the slurry is a mixture of resins, preferably light-curable resins; and a plurality of compositefluorescent gold nanoclusters 110. According to embodiments of the present disclosure, the compositefluorescent gold nanoclusters 110 are suspended in a macromolecular solution, then are mixed with the resin in a volume ratio from 1:1 to 1:32, preferably is 1:1. After curing the slurry, the plurality of compositefluorescent gold nanoclusters 110 are spread and dispersed in the resin, therefore forming a solidifiedpolymeric layer 1046, as illustrated inFIG. 1A . - Examples of the light-curable resin include, but are not limited to, 1-hydroxycyclohexyl phenyl ketone; 2-benzyl-2-(dimethylamino)-4′-morpholinobutyrophenone; 2-hydroxy-2-methylpropiophenone (HMPP); 2,4,6-trimethylbenzoyl diphenylphosphine oxide (Lucirin® TPO); 50-50 Blend of HMPP and TPO; 2-methyl-4′-(methylthio)-2-morpholinopropiophenone (MMMP); 2,2-dimethoxy-2-phenyl acetophenone (BDK); or 1-hydroxy-2-butanone. In some embodiments of the present disclosure, the light-curable resin is HMPP.
- The macromolecular solution is a gel or slurry phase formed by dissolving a polymer in a proper solvent (e.g., water, alcohols, and the like). Examples of polymers include, but is not limited to, poly(ethylene glycol) diacrylate (PEGDA); poly(ethylene glycol) dimethacrylate; polyvinylpyrrolidone (PVP), which generally refers to a polymer containing vinyl pyrrolidone (also referred to as N-vinylpyrrolidone, N-vinyl-2-pyrrolidione and N-vinyl-2-pyrrolidinone) as a monomeric unit; poly(N-isopropyl acrylamide); polyvinylalcohol (PVA); and polyepoxysuccinic acid (PESA) and its salt derivatives. In some embodiments, the macromolecular solution is a PEGDA solution (i.e., PEGDA in water).
- Referring to
FIG. 1B , which is a schematic view of a compositefluorescent gold nanocluster 110 according to one embodiment of the present disclosure. As illustrated, the compositefluorescent gold nanocluster 110 comprises agold nanocluster 1110 and acapping layer 1120. - Specifically, the
gold nanocluster 1110 is composed bymultiple gold atoms 1110′. As could be appreciated, although thegold nanocluster 1110 inFIG. 1B is depicted to compose of a specific number ofgold atoms 1110′, yet embodiments of the present invention are not limited thereto; rather, thegold nanocluster 1110 may be an aggregation of any suitable number in the range of several to dozens ofgold atoms 1110′. Preferably, thegold nanoclusters 1110 as described herein comprise 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, or 50 atoms. In other preferred embodiments, thegold nanoclusters 1110 comprise 2-30 atoms, 5-25 atoms, 5-20 atoms, or 5-15 atoms. Generally, the diameter of thegold nanocluster 1110 is about 0.1 to about 3 nm; preferably less than about 2 nm. - Still referring to
FIG. 1B , thecapping layer 1120 comprises amatrix 1122 made of a benzene-based compound; and a plurality of phosphine-basedcompounds 1124 distributed across thematrix 1122. As illustrated inFIG. 1B , thecapping layer 1120 encapsulates theentire gold nanocluster 1110. In other alternative embodiments, thecapping layer 1120 encapsulates or covers just a portion of the outer surface of thegold nanocluster 1110, or several portions of the outer surface of thegold nanocluster 1110. - According to one embodiment of the present disclosure, the composite
fluorescent gold nanoclusters 110 of the present disclosure may be produced by various methods. Each methods preferably comprises at least the following steps: (a) mixing gold(III) chloride (AuCl3) and a benzene-based compound at a molar ratio of about 1:0.5 to 1:5 to produce a first fluorescent gold nanoclusters; (b) treating the first fluorescent gold nanoclusters with an energy source selected from the group consisting of UV, acoustic, heat, microwave and a combination thereof to produce a second fluorescent gold nanoclusters; and (c) modifying the second fluorescent gold nanoclusters of the step (b) with a phosphine-based compound to produce the composite fluorescent gold nanoclusters of the present disclosure. It is worth noting that no reducing agent is required in this preferable method. - Examples of the benzene-based compound include, but are not limited to, benzene, alkylbenzene (such as, toluene, cumene, ethylbenzene, styrene, and xylene), halobenzene (e.g., fluorobenzene, chlorobenzene, bromobenzene, and iodobenzene), oxygen-containing benzene (e.g., phenol, benzoic acid, acetophenone, methyl benzoate, and anisole), nitrogen-containing benzene (e.g., aniline, nitrobenzene, benzonitrile, and benzamide), sulfur-containing benzene (e.g., benzenesulfonic acid), or polyaromatic (e.g., naphthalene, and anthracene). According to some examples, the benzene-based compound is toluene.
- In addition, phosphine-based compound is known to person having ordinary skill in the art, suitable examples of phosphine-based compound include, but are not limited to, phosphine, phosphine oxide, phosphonium, diphosphine, triphosphine, alkyl phosphine, cycloalkyl phosphine, aryl phosphine, aryl phosphine oxide, phenyl phosphine, bidentate phosphine, silicone derivative of phosphine, siloxane or polysilane derivative of phosphine, and olefinic phosphine. In some examples, the phosphine-based compound is alkyl phosphine, such as trioctylphosphine (TOP). In other examples, the phosphine-based compound is aryl phosphine oxide such as trioctylphosphine oxide (TOPO). In still other examples, the phosphine-based compound is phenyl phosphine, such as triphenylphosphine (TPP).
- According to the present disclosure, the light-emitting
unit 104 of theLED package structure 100 is configured to emit lights with pre-determined wavelengths depending on doping materials contained therein. The compositefluorescent gold nanoclusters 110 are configured to emit a first light in a first wavelength, and to absorb at least a portion of the light emitted from the gallium nitride-basedsemiconductor 1042, and emits a second light in a second wavelength, in which the first and second wavelengths are different. Eventually, the un-absorbed light emitted from the gallium nitride-basedsemiconductors 1042 and the second light emitted by the compositefluorescent gold nanoclusters 110 would combine with each other to produce a desired light color (e.g., white light). - More specifically, according to certain embodiments of the present disclosure, the original wavelength of the composite
fluorescent gold nanocluster 110 is between about 500 nm to about 590 nm, such as 500, 505, 510, 515, 520, 525, 530, 535, 540, 545, 550, 555, 560, 565, 570, 575, 580, 585, and 590 nm. As the converted wavelength of the second light after excited by the light-emittingunit 104, the converted wavelength of the peak emission is between about 550 nm to about 680 nm, such as 550, 555, 560, 565, 570, 575, 580, 585, 590, 595, 600, 605, 610, 615, 620, 625, 630, 635, 640, 645, 650, 655, 660, 665, 670, 675, and 680 nm. In some practical examples, the second peak emission is at about 550 nm to 600 nm. In other practical examples, the wavelength of the second peak emission is at about 600 to 675 nm (i.e., orange and/or red lights). - According to one embodiment of the present disclosure, in the
LED package structure 100, the gallium nitride-basedsemiconductors 1042 of the light-emittedunit 104 is InGaN/GaN semiconductors that emits a light having a wavelength between 395 nm to 495 nm (a.k.a., a blue light). In such case, the compositefluorescent gold nanoclusters 110 convert the emission light from the original wavelength between 570 nm to 590 nm to a wavelength between 600 nm to 675 nm by absorbing the blue light emitted from the gallium nitride-basedsemiconductors 1042. Therefore, theLED package structure 100 eventually emits a white light as a result of color addition of the original blue light emitted from the gallium nitride-basedsemiconductors 1042, and the first light and the re-emitted second light respectively generated from the compositefluorescent gold nanoclusters 110 before and after wavelength conversion. - Referring to
FIG. 2 , which is a schematic drawing of anLED package structure 200 in according to another embodiment of the present disclosure. TheLED package structure 200 emits a white light, and is characterized in having the compositefluorescent gold nanoclusters 210 as the wavelength-convertible materials. The configuration of theLED package structure 200 is similar to that of theLED package structure 100, and is constructed in similar manner except a GaN/AlGaN semiconductor emitting a wavelength shorter than 395 nm is used, and the polymeric layer encapsulating the GaN/AlGaN semiconductor further comprises a plurality ofluminescent carbon nanoparticles 220 dispersed in the resin. As depicted, theLED package structure 200 comprise in its structure, asubstrate 202; and alight emitting unit 204, which comprises a GaN/AlGaN semiconductor 2042 and apolymeric layer 2046 encapsulating the GaN/AlGaN semiconductor 2042. Similar to the process described above for constructing theLED package structure 100 ofFIG. 1A , apositive metal terminal 2024 and anegative metal terminal 2026 respectively serving as the positive and negative electrodes are constructed on thesubstrate 202; then, the GaN/AlGaN semiconductor 2042 is disposed in a recessedportion 2022 of thesubstrate 202, and on top of thepositive metal terminal 2024; the GaN/AlGaN semiconductor 2042 is electronically connected to the positive andnegative metal terminals conductive wires 2044. Apolymeric layer 2046 encapsulating the GaN/AlGaN semiconductor 2042 therein is formed in the recessedportion 2022 thereby creating thelight emitting unit 204. The GaN/AlGaN semiconductor emits a wavelength shorter than 395 nm, preferably in the range from about 200 nm to 395 nm. In other words, the GaN/AlGaN semiconductor emits an ultraviolet (UV) light. In addition to the resin and the plurality of compositefluorescent gold nanoclusters 210, thepolymeric layer 2046 in this embodiment further comprises a plurality ofluminescent carbon nanoparticles 220 dispersed in the resin. In practice, thepolymeric layer 2046 is formed by filling the recessedportion 2022 of thesubstrate 202 with a slurry mixture of light-curable resins, at least one compositefluorescent gold nanoclusters 210 and a plurality ofluminescent carbon nanoparticles 220. In some embodiment, the composite fluorescent gold nanoclusters and the luminescent carbon nanoparticles are mixed in a volume ratio of 1:10 to 10:1, preferably, 1:1. After curing (e.g., by heat or by exposed to light), the slurry mixture is solidified into thepolymeric layer 2046, with the compositefluorescent gold nanoclusters 210 and theluminescent carbon nanoparticles 220 dispersed in the resin, as illustrated inFIG. 2 . - The
luminescent carbon nanoparticles 220 can be commercially available or can be synthesized at the bench in accordance with any method known in the art. According to the present disclosure, theluminescent carbon nanoparticles 220 are exemplary produced from carbon sources such as a mixture of carboxylic acids and long-chain hydrocarbon alkenes but may be varied according to practical needs. In some embodiments of the present disclosure, the carboxylic acid is citric acid and the long-chain hydrocarbon alkene is octadecene. Generally, the diameter of theluminescent carbon nanoparticle 220 is about 0.1 to about 3 nm; preferably is about 2.5 to 2.8 nm. - More specifically, the GaN/AlGaN semiconductor emits a wavelength shorter than 395 nm; and the
luminescent carbon nanoparticles 220 respectively emit a blue light having a wavelength ranging from 400 nm to 500 nm. As such, by absorbing a portion of UV light, the original emission wavelength of the compositefluorescent gold nanoclusters 210 is converted from about 500-590 nm to about 550 nm to 600 nm. By this configuration, theLED package structure 200 eventually emits a white light, which is the summation of blue light and yellow light respectively emitted from the plurality ofluminescent carbon nanoparticles 220 and the compositefluorescent gold nanoclusters 210 dispersed in thepolymeric layer 2046. - It should be noted that the LED package structures of the present disclosure provide improved light-emitting properties due to the composite fluorescent gold nanoclusters, which possess at least following advantages: (1) the surface modification with phosphine-based compounds for the composite fluorescent gold nanoclusters increase the solubility thereof in the macromolecular solution, allowing the composite fluorescent gold nanoclusters to disperse more uniformly in the slurry; (2) since the fluorescence intensity of the wavelength-convertible materials is stable, the present LED package structure has excellent white color rendering property; (3) the fluorescence intensity of the composite fluorescent gold nanoclusters also increases in a correlation with the level of concentration thereof because of modification with benzene-based and phosphine-based compounds; and (4) the present fluorescent gold nanocluster are biocompatible and free from any toxicity since the manufacturing process of which does not require the use of any reducing agent, thereby enhancing the safety usage of the present LED package structures.
- The following Examples are provided to elucidate certain aspects of the present invention and to aid those of skilled in the art in practicing this invention. These Examples are in no way to be considered to limit the scope of the invention in any manner. Without further elaboration, it is believed that one skilled in the art can, based on the description herein, utilize the present invention to its fullest extent. All publications cited herein are hereby incorporated by reference in their entirety.
- In an oxygen-free and moisture-free glovebox, mixed gold (III) chloride (AuCl3) with toluene in the amount of approximately 7.5 mg/mL. The mixture was shaken for about 5 minutes to facilitate mixing, then heated at 80° C. or 120° C. for 1 hour. Then, the mixture was centrifuged at 3,000 rpm for 5 minutes, the supernatant was collected and exposed to UV radiation for 24 hours. Next, the UV-radiated supernatant (containing AuCl3 in a concentration of 1 mg/mL) was mixed with a toluene solution containing phosphine-based compound, e.g., TOP (200 mM), the thus produced composite fluorescent gold nanoclusters in toluene was stored as a stock until further use. For the sake of brevity, the composite fluorescent gold nanoclusters encompassing TOP is abbreviated as CFGN-TOPs hereinafter. In this experiment, the primary concentration of the CFGN-TOPs in the stock is defined as a stock concentration, which is denoted by 1-fold or 1×.
- Citric acid (0.8 g) and glycine (0.2 g) were respectively added into a nitric acid solution (which was prepared by mixing 1 mL nitric acid (0.5M) with 1 mL H2O), the mixture was then subjected to ultrasonic oscillation until all matters were completely dissolved. The thus produced solution was added into an oil solution (oleylamine (3 ml) and octadecene (7 ml)), and the mixture was ultrasonic oscillated for 15 seconds to form milky micelles, and continued to stir (at 700 rpm) for 10 minutes. The product was heated at 200° C. for 30 minutes in the presence of argon, then was centrifuged (3,000 rpm, 5 minutes) to remove carbon nanoparticles that were lower 1 nm in size. The remaining carbon nanoparticles were re-dissolved in acetone in a volume ratio of 1:3, then centrifuged at the speed of 13,300 rpm for 10 minutes. The carbon particles were harvested and re-suspended in toluene and stored as a stock. The thus produced concentration of the luminescent carbon nanoparticles is defined as a stock concentration, which is denoted by 1×.
- The toluene solution contacting composite fluorescent gold nanoclusters (CFGN-TOPs) obtained from Example 1.1 were dried by an evaporator. The composite fluorescent gold nanoclusters were re-suspended in a slurry of light-curable resin (HMPP) and PEGDA polymer in a pre-determined concentration (i.e., 0.59× to 1×) or volume (i.e., 10-30 μL). The slurry was overlaid onto a substrate where a blue color light-emitting chip disposed, the slurry was cured for 60-90 seconds to form a solidified polymeric layer encapsulating the blue color light-emitting chip therein thereby producing the desired white light LED package structure.
- The composite fluorescent gold nanoclusters of Example 1.1 and the luminescent carbon nanoparticles of Example 1.2 were mix in a volume ratio of 1:10 to 10:1 and were dried by an evaporator, then were re-suspended in a slurry of light-curable resin (HMPP) and PEGDA polymer in a determined concentration or volume (e.g., in a volume ratio of 1:1). The slurry was overlaid onto a substrate where a UV light-emitting chip was disposed, the slurry was cured for 60-90 seconds to form a solidified polymeric layer encapsulating the UV light-emitting chip therein thereby producing the desired white light LED package structure.
- The function of the white light LED package structure (i.e., the light-emitting property) was evaluated by the degree of dispersion of composite fluorescent gold nanoclusters in macromolecular solution, the amount of phosphine-based compound in the composite fluorescent gold nanoclusters.
- To verify the dispersibility, different condensed concentrations (1.6× and 3.33×) of the stock composite fluorescent gold nanoclusters in macromolecular solutions were mixed with PEGDA solution, and fluorescence intensity emitted thereform was measured. It was found that the composite fluorescent gold nanoclusters distributed uniformly across the PEGDA film regardless concentrations thereof; in addition, when excited with a light of 350 nm, the peak emission of the CFGN-TOPs was found to be centralized at about 550-575 nm (
FIG. 3 ). These results indicated that the dispersibility of the present composite fluorescent gold nanoclusters is high and desirable. - Different diluted concentrations (0.59×, 0.656×, 0.72×, 0.81×, and 1×) of the stock CFGN-TOPs were encapsulated within the blue color light-emitting chip in accordance with procedures described in Example 1.3. After encapsulation, the LED package structure was powered by 25 mA current and subjected to fluorescent intensity measurement using fluorescence photoluminescence spectrophotometer. Results are depicted in
FIGS. 4A-4B . - It appeared that the fluorescent intensity increased with an increase in the concentration of CFGN-TOPs (
FIG. 4A ). From a chromaticity diagram (CIE 1931 XYZ color spaces) result, the color emitted from the LED package structure shifted from blue color to white color, and eventually turned into yellow color. Further, the CCT of the light emitted by LED package structure decreased with an increase in the concentration of CFGN-TOPs. The CCT of the LED package structure was 5751K when the LED package structure emits a white light. On the other hand, the light rendering (Ra) of the LED package structure reached the peak of 92.71 Ra (FIG. 4B ). - Different volumes of the CFGN-TOPs (10-30 μl) were encapsulated within the blue color light-emitting chip in accordance with procedures described in Example 1.3. After encapsulation, the LED package structure was powered by 25 mA current and subjected to fluorescent intensity measurement using fluorescence photoluminescence spectrophotometer. Results are depicted in
FIGS. 5A-5B . The emission profile ofFIG. 5A indicated that the fluorescent intensity increased with an increase in the volume of CFGN-TOPs. As the CCT of the light emitted from LED package structure, it decreased with an increase in the volume of CFGN-TOPs. The CCT of the LED package structure was about 3993K when the LED package structure emitted a white light. On the other hand, the light rendering (Ra) of the LED package structure did not changed significantly with a change in the volume, and reached the highest performance at 90.17 Ra (FIG. 5B ). - 1× stock concentration of CFGN-TOPs (20 μl) were encapsulated within the blue color light-emitting chip in accordance with steps described in Example 1.3. After encapsulation, the LED package structure was powered by a current in the range of 5-30 mA and was subjected to fluorescent intensity measurement using fluorescence photoluminescence spectrophotometer. Results are depicted in
FIGS. 6A-6B . The emission profile ofFIG. 6A revealed that the fluorescent intensity increased with an increase in the current density, whereas the CCT of the light emitted from LED package structure and the light rendering (Ra) thereof remained relatively unchanged (FIG. 6B ). CCT of the LED package structure was around 5200K, and the light rendering remained about 90. - Light performance of the present white LED package structures (in which the wavelength-convertible material was CFGN-TOPs) was compared with that of a conventional LED package structure, in which the wavelength-convertible material was phosphor Ce3+-doped Y3Al5O12 (YAG:Ce3+). The results are depicted in
FIG. 7 and are summarized in Table 1. It was found that the fluorescent intensities emitted from the present wavelength-convertible materials are relatively stronger as compared with that of a LED package structure comprising phosphors. Further, the white LED package structures of the present disclosure possessed greater light rendering property (Ra) than that of a conventional LED package structure in which phosphor materials were used. -
TABLE 1 Comparison between devices respectively comprising CFGN-TOPs and conventional YAG: Ce3+ Wavelength- Chromaticity diagmm (CIE LED package convertible 1931 coordinates) structures material x-axis y-axis CCT (K) Ra Conventional LED YAG: Ce3+ 0.31207 0.30866 6728 77.1026 Present LED CFGN-TOPs 0.3397 0.32548 5143 91.7027 - Like Example 2.1, to verify the dispersibility, different concentrations (0.5×, 1× and 2×) of the stock luminescent carbon nanoparticles in macromolecular solutions were mixed with PEGDA solution, and fluorescence intensity emitted thereform was measured. It can be observed that the luminescent carbon nanoparticles distribute uniformly across the PEGDA film regardless concentrations thereof; in addition, when emitted by a 350 nm wavelength, the peak emission of the luminescent carbon nanoparticles is centralized about 450 nm (
FIG. 8 ). These results indicated that the uniformity of the distributed luminescent carbon nanoparticles is high and desirable. - The CFGN-TOPs of Example 1.1 and the luminescent carbon nanoparticles obtained from Example 1.2 were mix in a ratio of 1:1 and were encapsulated within the UV light-emitting chip by the method of Example 1.4. After encapsulation, the LED package structure was powered by 25 mA current and subjected to fluorescent intensity measurement using fluorescence photoluminescence spectrophotometer. Results are depicted in
FIG. 9 . The emission profile ofFIG. 9 represents the fluorescent emission was shifted and converted to visible spectrum, which eventually emitting as a white light. - It will be understood that the above description of embodiments is given by way of example only and that various modifications may be made by those with ordinary skill in the art. The above specification, examples and data provide a complete description of the structure and use of exemplary embodiments of the invention. Although various embodiments of the invention have been described above with a certain degree of particularity, or with reference to one or more individual embodiments, those with ordinary skill in the art could make numerous alterations to the disclosed embodiments without departing from the spirit or scope of this invention.
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Citations (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
US20020146742A1 (en) * | 1997-05-27 | 2002-10-10 | Wybourne Martin N. | Scaffold-organized metal, alloy, semiconductor and/or magnetic clusters and electronic devices made using such clusters |
US20030109056A1 (en) * | 2001-07-19 | 2003-06-12 | Tobias Vossmeyer | Chemical sensors from nanoparticle/dendrimer composite materials |
US20030118729A1 (en) * | 2000-03-14 | 2003-06-26 | Bishop Peter Trenton | Gold nanoparticles |
US20040002089A1 (en) * | 2000-08-29 | 2004-01-01 | Benoit Dubertret | Methods employing fluorescence quenching by metal surfaces |
US20040018633A1 (en) * | 2002-07-29 | 2004-01-29 | Foos Edward E. | Thiol terminated monodisperse ethylene oxide oligomer capped gold nanoclusters |
US20040150268A1 (en) * | 2002-01-30 | 2004-08-05 | Garito Anthony F. | Nanocomposite microresonators |
US20050064204A1 (en) * | 2003-02-10 | 2005-03-24 | Lalli Jennifer Hoyt | Rapidly self-assembled thin films and functional decals |
US20050191448A1 (en) * | 2004-02-26 | 2005-09-01 | Suh Min-Chul | Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet |
US20050219542A1 (en) * | 2004-03-31 | 2005-10-06 | Seth Adams | Detection of a substance in air by refractive index changes |
US20060148104A1 (en) * | 2004-10-29 | 2006-07-06 | Massachusetts Institute Of Technology | Detection of ion channel or receptor activity |
US20060154380A1 (en) * | 2004-06-23 | 2006-07-13 | Shunji Egusa | Synthesis of ordered arrays from gold clusters |
US20060158097A1 (en) * | 2003-03-17 | 2006-07-20 | Thomas Juestel | Illumination system comprising a radiation source and a fluorescent material |
US20070069199A1 (en) * | 2005-09-26 | 2007-03-29 | Osram Opto Semiconductors Gmbh | Interface conditioning to improve efficiency and lifetime of organic electroluminescence devices |
US7208322B2 (en) * | 2001-04-02 | 2007-04-24 | Agilent Technologies, Inc. | Sensor surfaces for detecting analytes |
US20070186846A1 (en) * | 2005-12-21 | 2007-08-16 | The Research Foundation Of State University Of New York | Non-spherical semiconductor nanocrystals and methods of making them |
US20070278930A1 (en) * | 2006-06-06 | 2007-12-06 | Sharp Kabushiki Kaisha | Oxynitride phosphor and light emitting device |
US20080206562A1 (en) * | 2007-01-12 | 2008-08-28 | The Regents Of The University Of California | Methods of generating supported nanocatalysts and compositions thereof |
US20080241262A1 (en) * | 2004-03-29 | 2008-10-02 | The University Of Houston System | Nanoshells and Discrete Polymer-Coated Nanoshells, Methods For Making and Using Same |
US20080261044A1 (en) * | 2003-02-10 | 2008-10-23 | Jennifer Hoyt Lalli | Rapidly self-assembled thin films and functional decals |
US20080311488A1 (en) * | 2007-06-13 | 2008-12-18 | Chi Mei Optoelectronics Corp. | Color Photoresist with Gold Nanoparticles and Color Filters Made Thereby |
US20090035575A1 (en) * | 2006-12-14 | 2009-02-05 | Industrial Technology Research Institute | Method for manufacturing metal nano particles having hollow structure and metal nano particles manufactured by the method |
US20090050856A1 (en) * | 2007-08-20 | 2009-02-26 | Lex Kosowsky | Voltage switchable dielectric material incorporating modified high aspect ratio particles |
US20090062197A1 (en) * | 2005-07-07 | 2009-03-05 | Fulcrum Sp Ltd. | Sp1 Polypeptides, Modified Sp1 Polypeptides and Uses Thereof |
US20090091237A1 (en) * | 2005-07-01 | 2009-04-09 | National Institute For Materials Science | Fluorophor and method for production thereof and illuminator |
US20090298115A1 (en) * | 2008-05-29 | 2009-12-03 | Chung Yuan Christian University | Fluorescent Gold Nanocluster and Method for Forming the Same |
US20100009427A1 (en) * | 2007-04-10 | 2010-01-14 | Los Alamos National Security, Llc | Synthesis of fluorescent metal nanoclusters |
US20100090176A1 (en) * | 2008-09-30 | 2010-04-15 | Lex Kosowsky | Voltage Switchable Dielectric Material Containing Conductor-On-Conductor Core Shelled Particles |
US20100123155A1 (en) * | 2008-11-19 | 2010-05-20 | Nanoco Technologies Limited | Semiconductor nanoparticle-based light-emitting devices and associated materials and methods |
US20100128275A1 (en) * | 2005-11-11 | 2010-05-27 | National Chung Cheng University | Localized surface plasmon resonance sensing system, appartatus, method thereof |
US20100140673A1 (en) * | 2008-12-04 | 2010-06-10 | Palo Alto Research Center Incorporated | Printing shielded connections and circuits |
US20100163806A1 (en) * | 2008-12-31 | 2010-07-01 | Chung Yuan Christian University | Tunable Fluorescent Gold Nanocluster And Method for forming the same |
US20110021970A1 (en) * | 2007-11-06 | 2011-01-27 | Duke University | Non-invasive energy upconversion methods and systems for in-situ photobiomodulation |
US20110068321A1 (en) * | 2009-09-23 | 2011-03-24 | Nanoco Technologies Limited | Semiconductor nanoparticle-based materials |
US20110068322A1 (en) * | 2009-09-23 | 2011-03-24 | Nanoco Technologies Limited | Semiconductor Nanoparticle-Based Materials |
US20110165689A1 (en) * | 2008-08-05 | 2011-07-07 | Agency For Science, Technology And Research 1 Fusionoplis Way | Methods, compositions, and articles comprising stabilized gold nanoclusters |
US20110294995A1 (en) * | 2003-03-05 | 2011-12-01 | Qun Huo | Functionalized nanoparticles and other particles and methods for making and using same |
US20110300532A1 (en) * | 2009-03-05 | 2011-12-08 | Wilhelm Jahnen-Dechent | Control of the toxicity of gold nanoparticles |
US20120052513A1 (en) * | 2010-08-24 | 2012-03-01 | Pradeep Thalappil | Gold sub-nanoclusters and uses thereof |
US8162498B2 (en) * | 2008-05-27 | 2012-04-24 | Abl Ip Holding Llc | Solid state lighting using nanophosphor bearing material that is color-neutral when not excited by a solid state source |
US20120195833A1 (en) * | 2011-02-01 | 2012-08-02 | Chung Yuan Christian University | Medical Contrast Agent Made of Microbubbles Containing Fluorescent Gold Nanoclusters |
US20130045877A1 (en) * | 2011-08-19 | 2013-02-21 | Agency For Science, Technology And Research | Methods to form substrates for optical sensing by surface enhanced raman spectroscopy (sers) and substrates formed by the methods |
US20130052270A1 (en) * | 2011-08-26 | 2013-02-28 | Chung Yuan Christian University | Use of Gold Nanoclusters in Ameliorating Oxidate Stress and/or Aging |
US20130071619A1 (en) * | 2010-05-28 | 2013-03-21 | Nippon Steel & Sumikin Chemical Co., Ltd. | Metal fine-particle composite and method for fabricating the same |
US20130157055A1 (en) * | 2010-04-29 | 2013-06-20 | Leonardus Wijnand Jenneskens | Nano-Particles Containing Carbon and a Ferromagnetic Metal or Alloy |
US20130273340A1 (en) * | 2012-04-16 | 2013-10-17 | Temple University - Of the Commonwealth System of Higher Education | Self-assembly of small structures |
US20140231749A1 (en) * | 2011-09-20 | 2014-08-21 | Seoul National University R&Db Foundation | Nano particle, nano particle complex having the same and method of fabricating the same |
US20140369024A1 (en) * | 2012-02-03 | 2014-12-18 | Koninklijke Philips N.V. | Novel materials and methods for dispersing nano particles in matrices with high quantum yields and stability |
US20150037585A1 (en) * | 2013-07-31 | 2015-02-05 | Colorado State University Research Foundation | Ligand passivated gold nanoparticles |
US20150075069A1 (en) * | 2012-05-28 | 2015-03-19 | Fujifilm Corporation | System for selective irradiation with circularly polarized light |
US9140415B2 (en) * | 2010-12-21 | 2015-09-22 | Koninklijke Philips N.V. | Lighting device with polymer containing matrices |
US20150300578A1 (en) * | 2012-12-05 | 2015-10-22 | Koninklijke Philips N.V. | Light conversion materials based on luminescent metal atomic nanoclusters |
US20150306253A1 (en) * | 2014-04-25 | 2015-10-29 | The Board Of Regents Of The University Of Texas System | Dual emissive metal nanoparticles as ratiometric ph indicators |
US9187318B2 (en) * | 2010-09-21 | 2015-11-17 | Technical Institute of Physics and Chemistry of the Chinese Academy of Sciences | Laser micro/nano processing system and method |
US20160104825A1 (en) * | 2014-10-08 | 2016-04-14 | Lg Display Co., Ltd. | Led package, backlight unit and liquid crystal display device |
US20160131582A1 (en) * | 2014-11-06 | 2016-05-12 | Industrial Technology Research Institute | Gold nanocluster composition and method for preparing the same and method for detecting thiol-containing compounds |
US9349921B2 (en) * | 2012-10-19 | 2016-05-24 | Osram Sylvania Inc. | Index matched composite materials and light sources incorporating the same |
US9362189B2 (en) * | 2011-09-09 | 2016-06-07 | Samsung Electronics Co., Ltd. | Case including semiconductor nanocrystals, and optoelectronic device including the same |
US9382470B2 (en) * | 2010-07-01 | 2016-07-05 | Samsung Electronics Co., Ltd. | Thiol containing compositions for preparing a composite, polymeric composites prepared therefrom, and articles including the same |
US9443998B2 (en) * | 2013-03-14 | 2016-09-13 | Nanoco Technologies Ltd. | Multi-layer-coated quantum dot beads |
US20160271694A1 (en) * | 2015-03-18 | 2016-09-22 | California Institute Of Technology | Multiphoton induced direct aggregate scribing |
US20160272865A1 (en) * | 2014-03-26 | 2016-09-22 | NANO CAST TECH Co., Ltd. | Method of preparing graphene-graphene fused material and method of preparing graphene-substrate composite using the same |
US9525110B2 (en) * | 2012-10-16 | 2016-12-20 | Denka Company Limited | Phosphor, light emitting device and lighting apparatus |
US20170176272A1 (en) * | 2014-04-04 | 2017-06-22 | The Regents Of The University Of California | Plasmonic nanoparticle-based colorimetric stress memory sensor |
US20170362282A1 (en) * | 2016-06-20 | 2017-12-21 | Colorado State University Research Foundation | Engineered programmable molecular scaffolds from porous protein crystals |
US20180055083A1 (en) * | 2016-08-23 | 2018-03-01 | Goldred Nanobiotech Co., Ltd. | Process for forming a solution containing gold nanoclusters binding with ligands |
US10066158B2 (en) * | 2012-01-19 | 2018-09-04 | Nanoco Technologies, Ltd. | Molded nanoparticle phosphor for light emitting applications |
US10202543B2 (en) * | 2013-03-05 | 2019-02-12 | Osram Opto Semiconductors Gmbh | Quantum dot (QD) delivery method |
US10217908B2 (en) * | 2011-09-23 | 2019-02-26 | Nanoco Technologies Ltd. | Semiconductor nanoparticle-based light emitting materials |
US20190072245A1 (en) * | 2016-03-30 | 2019-03-07 | Sony Corporation | Light-emitting device, light source unit, and projection display apparatus |
US20190352562A1 (en) * | 2018-05-17 | 2019-11-21 | Chung Yuan Christian University | Composite fluorescent gold nanoclusters with high quantum yield and method for manufacturing the same |
US20200086264A1 (en) * | 2016-08-23 | 2020-03-19 | Goldred Nanobiotech Co., Ltd. | Method for enhancing anti-oxidation activity of a solution containing gold nanoclusters binding with ligands and its making process |
US20200168774A1 (en) * | 2017-12-26 | 2020-05-28 | Jiaxing Super Lighting Electric Appliance Co., Ltd | Light bulb with a symmetrical led filament |
-
2019
- 2019-03-04 US US16/291,174 patent/US10756243B1/en active Active
Patent Citations (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
US20020146742A1 (en) * | 1997-05-27 | 2002-10-10 | Wybourne Martin N. | Scaffold-organized metal, alloy, semiconductor and/or magnetic clusters and electronic devices made using such clusters |
US20030118729A1 (en) * | 2000-03-14 | 2003-06-26 | Bishop Peter Trenton | Gold nanoparticles |
US20040002089A1 (en) * | 2000-08-29 | 2004-01-01 | Benoit Dubertret | Methods employing fluorescence quenching by metal surfaces |
US7208322B2 (en) * | 2001-04-02 | 2007-04-24 | Agilent Technologies, Inc. | Sensor surfaces for detecting analytes |
US20030109056A1 (en) * | 2001-07-19 | 2003-06-12 | Tobias Vossmeyer | Chemical sensors from nanoparticle/dendrimer composite materials |
US20040150268A1 (en) * | 2002-01-30 | 2004-08-05 | Garito Anthony F. | Nanocomposite microresonators |
US20040018633A1 (en) * | 2002-07-29 | 2004-01-29 | Foos Edward E. | Thiol terminated monodisperse ethylene oxide oligomer capped gold nanoclusters |
US20050064204A1 (en) * | 2003-02-10 | 2005-03-24 | Lalli Jennifer Hoyt | Rapidly self-assembled thin films and functional decals |
US20080261044A1 (en) * | 2003-02-10 | 2008-10-23 | Jennifer Hoyt Lalli | Rapidly self-assembled thin films and functional decals |
US20110294995A1 (en) * | 2003-03-05 | 2011-12-01 | Qun Huo | Functionalized nanoparticles and other particles and methods for making and using same |
US20060158097A1 (en) * | 2003-03-17 | 2006-07-20 | Thomas Juestel | Illumination system comprising a radiation source and a fluorescent material |
US20050191448A1 (en) * | 2004-02-26 | 2005-09-01 | Suh Min-Chul | Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet |
US20080241262A1 (en) * | 2004-03-29 | 2008-10-02 | The University Of Houston System | Nanoshells and Discrete Polymer-Coated Nanoshells, Methods For Making and Using Same |
US20050219542A1 (en) * | 2004-03-31 | 2005-10-06 | Seth Adams | Detection of a substance in air by refractive index changes |
US20060154380A1 (en) * | 2004-06-23 | 2006-07-13 | Shunji Egusa | Synthesis of ordered arrays from gold clusters |
US20060148104A1 (en) * | 2004-10-29 | 2006-07-06 | Massachusetts Institute Of Technology | Detection of ion channel or receptor activity |
US20090091237A1 (en) * | 2005-07-01 | 2009-04-09 | National Institute For Materials Science | Fluorophor and method for production thereof and illuminator |
US20090062197A1 (en) * | 2005-07-07 | 2009-03-05 | Fulcrum Sp Ltd. | Sp1 Polypeptides, Modified Sp1 Polypeptides and Uses Thereof |
US20070069199A1 (en) * | 2005-09-26 | 2007-03-29 | Osram Opto Semiconductors Gmbh | Interface conditioning to improve efficiency and lifetime of organic electroluminescence devices |
US20100128275A1 (en) * | 2005-11-11 | 2010-05-27 | National Chung Cheng University | Localized surface plasmon resonance sensing system, appartatus, method thereof |
US20070186846A1 (en) * | 2005-12-21 | 2007-08-16 | The Research Foundation Of State University Of New York | Non-spherical semiconductor nanocrystals and methods of making them |
US20070278930A1 (en) * | 2006-06-06 | 2007-12-06 | Sharp Kabushiki Kaisha | Oxynitride phosphor and light emitting device |
US20090035575A1 (en) * | 2006-12-14 | 2009-02-05 | Industrial Technology Research Institute | Method for manufacturing metal nano particles having hollow structure and metal nano particles manufactured by the method |
US20080206562A1 (en) * | 2007-01-12 | 2008-08-28 | The Regents Of The University Of California | Methods of generating supported nanocatalysts and compositions thereof |
US7914588B2 (en) * | 2007-04-10 | 2011-03-29 | Los Alamos National Security, Llc | Synthesis of fluorescent metal nanoclusters |
US20110185854A1 (en) * | 2007-04-10 | 2011-08-04 | The Regents Of The University Of California | Synthesis of Fluorescent Metal Nanoclusters |
US20100009427A1 (en) * | 2007-04-10 | 2010-01-14 | Los Alamos National Security, Llc | Synthesis of fluorescent metal nanoclusters |
US20080311488A1 (en) * | 2007-06-13 | 2008-12-18 | Chi Mei Optoelectronics Corp. | Color Photoresist with Gold Nanoparticles and Color Filters Made Thereby |
US20090050856A1 (en) * | 2007-08-20 | 2009-02-26 | Lex Kosowsky | Voltage switchable dielectric material incorporating modified high aspect ratio particles |
US9302116B2 (en) * | 2007-11-06 | 2016-04-05 | Duke University | Non-invasive energy upconversion methods and systems for in-situ photobiomodulation |
US20110021970A1 (en) * | 2007-11-06 | 2011-01-27 | Duke University | Non-invasive energy upconversion methods and systems for in-situ photobiomodulation |
US8162498B2 (en) * | 2008-05-27 | 2012-04-24 | Abl Ip Holding Llc | Solid state lighting using nanophosphor bearing material that is color-neutral when not excited by a solid state source |
US20090298115A1 (en) * | 2008-05-29 | 2009-12-03 | Chung Yuan Christian University | Fluorescent Gold Nanocluster and Method for Forming the Same |
US20110165689A1 (en) * | 2008-08-05 | 2011-07-07 | Agency For Science, Technology And Research 1 Fusionoplis Way | Methods, compositions, and articles comprising stabilized gold nanoclusters |
US20120100075A1 (en) * | 2008-08-29 | 2012-04-26 | Chung Yuan Christian University | Fluorescent Gold Nanocluster Matrix |
US20100090176A1 (en) * | 2008-09-30 | 2010-04-15 | Lex Kosowsky | Voltage Switchable Dielectric Material Containing Conductor-On-Conductor Core Shelled Particles |
US20100123155A1 (en) * | 2008-11-19 | 2010-05-20 | Nanoco Technologies Limited | Semiconductor nanoparticle-based light-emitting devices and associated materials and methods |
US20100140673A1 (en) * | 2008-12-04 | 2010-06-10 | Palo Alto Research Center Incorporated | Printing shielded connections and circuits |
US20100163806A1 (en) * | 2008-12-31 | 2010-07-01 | Chung Yuan Christian University | Tunable Fluorescent Gold Nanocluster And Method for forming the same |
US8263668B2 (en) * | 2008-12-31 | 2012-09-11 | Chung Yuan Christian University | Tunable fluorescent gold nanocluster and method for forming the same |
US20110300532A1 (en) * | 2009-03-05 | 2011-12-08 | Wilhelm Jahnen-Dechent | Control of the toxicity of gold nanoparticles |
US8957401B2 (en) * | 2009-09-23 | 2015-02-17 | Nanoco Technologies, Ltd | Semiconductor nanoparticle-based materials |
US20110068321A1 (en) * | 2009-09-23 | 2011-03-24 | Nanoco Technologies Limited | Semiconductor nanoparticle-based materials |
US20110068322A1 (en) * | 2009-09-23 | 2011-03-24 | Nanoco Technologies Limited | Semiconductor Nanoparticle-Based Materials |
US20130157055A1 (en) * | 2010-04-29 | 2013-06-20 | Leonardus Wijnand Jenneskens | Nano-Particles Containing Carbon and a Ferromagnetic Metal or Alloy |
US20130071619A1 (en) * | 2010-05-28 | 2013-03-21 | Nippon Steel & Sumikin Chemical Co., Ltd. | Metal fine-particle composite and method for fabricating the same |
US9382470B2 (en) * | 2010-07-01 | 2016-07-05 | Samsung Electronics Co., Ltd. | Thiol containing compositions for preparing a composite, polymeric composites prepared therefrom, and articles including the same |
US20120052513A1 (en) * | 2010-08-24 | 2012-03-01 | Pradeep Thalappil | Gold sub-nanoclusters and uses thereof |
US9187318B2 (en) * | 2010-09-21 | 2015-11-17 | Technical Institute of Physics and Chemistry of the Chinese Academy of Sciences | Laser micro/nano processing system and method |
US9140415B2 (en) * | 2010-12-21 | 2015-09-22 | Koninklijke Philips N.V. | Lighting device with polymer containing matrices |
US20140360981A1 (en) * | 2011-02-01 | 2014-12-11 | Chung Yuan Christian University | Medical Contrast Agent Made of Microbubbles Containing Fluorescent Gold Nanoclusters |
US20120195833A1 (en) * | 2011-02-01 | 2012-08-02 | Chung Yuan Christian University | Medical Contrast Agent Made of Microbubbles Containing Fluorescent Gold Nanoclusters |
US20130045877A1 (en) * | 2011-08-19 | 2013-02-21 | Agency For Science, Technology And Research | Methods to form substrates for optical sensing by surface enhanced raman spectroscopy (sers) and substrates formed by the methods |
US20130052270A1 (en) * | 2011-08-26 | 2013-02-28 | Chung Yuan Christian University | Use of Gold Nanoclusters in Ameliorating Oxidate Stress and/or Aging |
US9101672B2 (en) * | 2011-08-26 | 2015-08-11 | Mackay Memorial Hospital | Use of gold nanoclusters in ameliorating oxidate stress and/or aging |
US9362189B2 (en) * | 2011-09-09 | 2016-06-07 | Samsung Electronics Co., Ltd. | Case including semiconductor nanocrystals, and optoelectronic device including the same |
US20140231749A1 (en) * | 2011-09-20 | 2014-08-21 | Seoul National University R&Db Foundation | Nano particle, nano particle complex having the same and method of fabricating the same |
US10217908B2 (en) * | 2011-09-23 | 2019-02-26 | Nanoco Technologies Ltd. | Semiconductor nanoparticle-based light emitting materials |
US10066158B2 (en) * | 2012-01-19 | 2018-09-04 | Nanoco Technologies, Ltd. | Molded nanoparticle phosphor for light emitting applications |
US20140369024A1 (en) * | 2012-02-03 | 2014-12-18 | Koninklijke Philips N.V. | Novel materials and methods for dispersing nano particles in matrices with high quantum yields and stability |
US20130273340A1 (en) * | 2012-04-16 | 2013-10-17 | Temple University - Of the Commonwealth System of Higher Education | Self-assembly of small structures |
US20150075069A1 (en) * | 2012-05-28 | 2015-03-19 | Fujifilm Corporation | System for selective irradiation with circularly polarized light |
US9525110B2 (en) * | 2012-10-16 | 2016-12-20 | Denka Company Limited | Phosphor, light emitting device and lighting apparatus |
US9349921B2 (en) * | 2012-10-19 | 2016-05-24 | Osram Sylvania Inc. | Index matched composite materials and light sources incorporating the same |
US20150300578A1 (en) * | 2012-12-05 | 2015-10-22 | Koninklijke Philips N.V. | Light conversion materials based on luminescent metal atomic nanoclusters |
US9784419B2 (en) * | 2012-12-05 | 2017-10-10 | Koninklijke Philips N.V. | Light conversion materials based on luminescent metal atomic nanoclusters |
US10202543B2 (en) * | 2013-03-05 | 2019-02-12 | Osram Opto Semiconductors Gmbh | Quantum dot (QD) delivery method |
US9443998B2 (en) * | 2013-03-14 | 2016-09-13 | Nanoco Technologies Ltd. | Multi-layer-coated quantum dot beads |
US20150037585A1 (en) * | 2013-07-31 | 2015-02-05 | Colorado State University Research Foundation | Ligand passivated gold nanoparticles |
US20160272865A1 (en) * | 2014-03-26 | 2016-09-22 | NANO CAST TECH Co., Ltd. | Method of preparing graphene-graphene fused material and method of preparing graphene-substrate composite using the same |
US20170176272A1 (en) * | 2014-04-04 | 2017-06-22 | The Regents Of The University Of California | Plasmonic nanoparticle-based colorimetric stress memory sensor |
US20150306253A1 (en) * | 2014-04-25 | 2015-10-29 | The Board Of Regents Of The University Of Texas System | Dual emissive metal nanoparticles as ratiometric ph indicators |
US10573792B2 (en) * | 2014-10-08 | 2020-02-25 | Lg Display Co., Ltd. | LED package, backlight unit and liquid crystal display device |
US20160104825A1 (en) * | 2014-10-08 | 2016-04-14 | Lg Display Co., Ltd. | Led package, backlight unit and liquid crystal display device |
US9506864B2 (en) * | 2014-11-06 | 2016-11-29 | Industrial Technology Research Institute | Method for preparing gold nanocluster composition |
US20160131582A1 (en) * | 2014-11-06 | 2016-05-12 | Industrial Technology Research Institute | Gold nanocluster composition and method for preparing the same and method for detecting thiol-containing compounds |
US20160271694A1 (en) * | 2015-03-18 | 2016-09-22 | California Institute Of Technology | Multiphoton induced direct aggregate scribing |
US20190072245A1 (en) * | 2016-03-30 | 2019-03-07 | Sony Corporation | Light-emitting device, light source unit, and projection display apparatus |
US20170362282A1 (en) * | 2016-06-20 | 2017-12-21 | Colorado State University Research Foundation | Engineered programmable molecular scaffolds from porous protein crystals |
US20180055083A1 (en) * | 2016-08-23 | 2018-03-01 | Goldred Nanobiotech Co., Ltd. | Process for forming a solution containing gold nanoclusters binding with ligands |
US20200086264A1 (en) * | 2016-08-23 | 2020-03-19 | Goldred Nanobiotech Co., Ltd. | Method for enhancing anti-oxidation activity of a solution containing gold nanoclusters binding with ligands and its making process |
US20200168774A1 (en) * | 2017-12-26 | 2020-05-28 | Jiaxing Super Lighting Electric Appliance Co., Ltd | Light bulb with a symmetrical led filament |
US20190352562A1 (en) * | 2018-05-17 | 2019-11-21 | Chung Yuan Christian University | Composite fluorescent gold nanoclusters with high quantum yield and method for manufacturing the same |
Non-Patent Citations (1)
Title |
---|
Jean Marie Basset Lutfan Sinatra Aljuhani Synthesis and Optical Properties of a Dithiolate/Phosphine Protected Au28 Nanocluster, Maha A. , Megalamane S. Bootharaju, , - , Omar F. Mohammad, and Osman M. Bakr, KAUST, Saudi Arabia, American Chemical Society, 2016 * |
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