US20200083281A1 - Top emission microled display and bottom emission microled display and a method of forming the same - Google Patents
Top emission microled display and bottom emission microled display and a method of forming the same Download PDFInfo
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- US20200083281A1 US20200083281A1 US16/153,604 US201816153604A US2020083281A1 US 20200083281 A1 US20200083281 A1 US 20200083281A1 US 201816153604 A US201816153604 A US 201816153604A US 2020083281 A1 US2020083281 A1 US 2020083281A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2003—Display of colours
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present invention generally relates to a light-emitting diode (LED) display, and more particularly to a top emission microLED display and a bottom emission microLED display.
- LED light-emitting diode
- a micro light-emitting diode (microLED, mLED or ⁇ LED) display panel is one type of flat display panel, which is composed of microscopic microLEDs each having a size of 1-10 micrometers.
- the microLED display panels offer better contrast, response time and energy efficiency. Although both organic light-emitting diodes (OLEDs) and microLEDs possess good energy efficiency, the microLEDs, based on group III/V (e.g., GaN) LED technology, offer higher brightness, higher luminous efficacy and longer lifespan than the OLEDs.
- group III/V e.g., GaN
- TFT thin-film transistors
- CMOS complementary metal-oxide-semiconductor
- Passive matrix is another driving method performed by a row drive circuit and a column drive circuit, which are disposed on the periphery of a display panel.
- a row drive circuit and a column drive circuit which are disposed on the periphery of a display panel.
- output loading and delay of the drive circuits increase accordingly, causing the display panel to malfunction. Therefore, passive matrix is not suitable for large-size microLED display panels.
- interference e.g., color mixing
- non-uniform display may happen due to connecting wires composed of opaque or reflective material that connecting the microLEDs with other components or circuits.
- a top emission microLED display includes a first main substrate; a bottom common electrode layer disposed on a top surface of the first main substrate; a plurality of microLEDs disposed on the bottom common electrode layer; a first light blocking layer disposed on the bottom common electrode layer to define a plurality of emission areas; a light guiding layer disposed in the emission areas; and a plurality of connecting structures disposed in the emission areas respectively and electrically connected with the microLEDs.
- a bottom emission microLED display includes a first main substrate; a plurality of microLEDs disposed above the first main substrate; a first light blocking layer disposed above the first main substrate to define a plurality of emission areas; a light guiding layer disposed in the emission areas; a plurality of connecting structures disposed in the emission areas respectively and electrically connected with the microLEDs; and a top common electrode layer disposed above the first light blocking layer and the microLEDs.
- FIG. 1 schematically shows a side view of a top emission microLED display
- FIG. 2A shows a top view of a top emission microLED display according to a first embodiment of the present invention
- FIG. 2B shows a cross-sectional view of FIG. 2A ;
- FIG. 2C shows a cross-sectional view of a top emission microLED display according to a modified first embodiment of the present invention
- FIG. 2D shows another top view of the top emission microLED display according to the first embodiment of the present invention.
- FIG. 3A shows a top view of a top emission microLED display according to a second embodiment of the present invention
- FIG. 3B shows a cross-sectional view of FIG. 3A ;
- FIG. 3C shows a cross-sectional view of a top emission microLED display according to a modified second embodiment of the present invention
- FIG. 3D shows another top view of the top emission microLED display according to the second embodiment of the present invention.
- FIG. 4A shows a top view of a top emission microLED display according to a third embodiment of the present invention.
- FIG. 4B shows a cross-sectional view of FIG. 4A ;
- FIG. 4C shows a cross-sectional view of a top emission microLED display according to a modified third embodiment of the present invention.
- FIG. 5A shows a top view of a top emission microLED display according to a fourth embodiment of the present invention.
- FIG. 5B shows a cross-sectional view of FIG. 5A ;
- FIG. 5C shows a cross-sectional view of a top emission microLED display according to a modified fourth embodiment of the present invention.
- FIG. 6 shows a cross-sectional view of a top emission microLED display according to a fifth embodiment of the present invention.
- FIG. 7A to FIG. 13B show top views and cross-sectional views illustrating steps of forming a top emission microLED display according to one embodiment of the present invention
- FIG. 14 schematically shows a side view of a bottom emission micro light-emitting diode (microLED) display
- FIG. 15A shows a top view of a bottom emission microLED display according to a sixth embodiment of the present invention.
- FIG. 15B shows a cross-sectional view of FIG. 15A ;
- FIG. 15C shows a cross-sectional view of a bottom emission microLED display according to a modified sixth embodiment of the present invention.
- FIG. 15D shows another top view of the bottom emission microLED display according to the sixth embodiment of the present invention.
- FIG. 16A shows a top view of a bottom emission microLED display according to a seventh embodiment of the present invention.
- FIG. 16B shows a cross-sectional view of FIG. 16A ;
- FIG. 16C shows a cross-sectional view of a bottom emission microLED display according to a modified seventh embodiment of the present invention.
- FIG. 16D shows another top view of the bottom emission microLED display according to the seventh embodiment of the present invention.
- FIG. 17A shows a top view of a bottom emission microLED display according to an eighth embodiment of the present invention.
- FIG. 17B shows a cross-sectional view of FIG. 17A ;
- FIG. 17C shows a cross-sectional view of a bottom emission microLED display according to a modified eighth embodiment of the present invention.
- FIG. 18A shows a top view of a bottom emission microLED display according to a ninth embodiment of the present invention.
- FIG. 18B shows a cross-sectional view of FIG. 18A ;
- FIG. 18C shows a cross-sectional view of a bottom emission microLED display according to a modified ninth embodiment of the present invention.
- FIG. 19 shows a cross-sectional view of a bottom emission microLED display according to a tenth embodiment of the present invention.
- FIG. 20A to FIG. 26B show top views and cross-sectional views illustrating steps of forming a bottom emission microLED display according to one embodiment of the present invention
- FIG. 27 shows a cross-sectional view of a bottom emission microLED display according to an eleventh embodiment of the present invention.
- FIG. 28 shows a cross-sectional view of a top emission microLED display according to a twelfth embodiment of the present invention.
- FIG. 29 shows a cross-sectional view of a bottom emission microLED display according to a thirteenth embodiment of the present invention.
- FIG. 30 shows a cross-sectional view of a bottom emission microLED display according to a modified thirteenth embodiment of the present invention.
- FIG. 31 shows a cross-sectional view of a bottom emission microLED display according to a fourteenth embodiment of the present invention.
- FIG. 32 shows a cross-sectional view of a bottom emission microLED display according to a modified fourteenth embodiment of the present invention.
- FIG. 1 schematically shows a side view of a top emission micro light-emitting diode (microLED) display 100 .
- microLEDs 12 e.g., red microLED 12 R, green microLED 12 G and blue microLED 12 B
- the display 100 is called a top emission microLED display.
- the microLEDs 12 have a size of 1-10 micrometers, which may be decreased or increased according to specific applications or technological development in the future.
- FIG. 2A shows a top view of a top emission microLED display 200 according to a first embodiment of the present invention
- FIG. 2B shows a cross-sectional view of FIG. 2A
- microLEDs 22 e.g., red microLED 22 R, green microLED 22 G and blue microLED 22 B
- a (first) light blocking layer 23 A is disposed between adjacent microLEDs 22 and above the (first) main substrate 21 A to prevent interference (e.g., color mixing) between adjacent microLEDs 22 and to enhance contrast.
- a bottom common electrode layer 28 may be disposed between the main substrate 21 A and the microLEDs 22 .
- the microLED 22 may be a rectangle, for example, with a length of 25 micrometers and a width of 10 micrometers.
- the microLEDs 22 may be disposed longitudinally. That is, the length of the microLED 22 is parallel to the longitude of the display 200 , and the width of the microLED is parallel to the latitude of the display 200 . As human eyes are more sensitive to vertically emitted light than horizontally emitted light, the display 200 of the embodiment can enhance viewing angle.
- the (first) light blocking layer 23 A of the embodiment may include black matrix (BM).
- black resin is first formed, followed by adopting photo process and curing process to form the BM (first) light blocking layer 23 A.
- ink-jet printing technique and curing process are adopted to form the BM (first) light blocking layer 23 A.
- the (first) light blocking layer 23 A defines emission areas 24 , which are not covered with the (first) light blocking layer 23 A. In other words, areas other than the emission areas 24 are covered with the (first) light blocking layer 23 A.
- a light guiding layer 25 composed of light guiding material, is disposed in the emission areas 24 to spread the light emitted by the microLEDs 22 .
- the light guiding material is transparent with high refractive index. In the embodiment, the light guiding layer 25 is entirely formed in the emission areas 24 .
- the (first) light blocking layer 23 A has a thickness greater than the light guiding layer 25 . Further, the light guiding layer 25 has a thickness greater than or equal to the microLEDs 22 .
- FIG. 2C shows a cross-sectional view of a top emission microLED display 200 according to a modified first embodiment of the present invention.
- the (first) light blocking layer 23 A has a thickness less than the light guiding layer 25 .
- the (first) light blocking layer 23 A and the light guiding layer 25 partially overlap each other, and the (first) light blocking layer 23 A is partially covered with the light guiding layer 25 .
- a chromium/chromium oxide film is first formed, followed by adopting photo etching technique to form the BM (first) light blocking layer 23 A.
- FIG. 2D shows another top view of the top emission microLED display 200 according to the first embodiment of the present invention.
- a connecting structure 26 such as conductive electrode, is disposed on a top surface of the microLED 22 in each emission area 24 .
- the connecting structure 26 may include transparent material (e.g., indium tin oxide), opaque material (e.g., metal) or reflective material.
- the connecting structures 26 in the emission areas 24 have the same pattern, which can prevent nonuniform display issue.
- FIG. 3A shows a top view of a top emission microLED display 300 according to a second embodiment of the present invention
- FIG. 3B shows a cross-sectional view of FIG. 3A
- the second embodiment is similar to the first embodiment with the exception that, in the second embodiment, the (first) light blocking layer 23 A is disposed between adjacent pixels (instead of adjacent microLEDs 22 ) to prevent interference (e.g., color mixing) between adjacent pixels and to enhance contrast.
- the (first) light blocking layer 23 A defines emission areas 24 , which are not covered with the (first) light blocking layer 23 A. In other words, areas other than the emission areas 24 are covered with the (first) light blocking layer 23 A. In the embodiment, the light guiding layer 25 is entirely formed in the emission areas 24 .
- the (first) light blocking layer 23 A has a thickness greater than the light guiding layer 25 .
- the light guiding layer 25 has a thickness greater than the microLEDs 22 as shown in FIG. 3B . In another embodiment, however, the light guiding layer 25 has a thickness less than or equal to the microLEDs 22 .
- FIG. 3C shows a cross-sectional view of a top emission microLED display 300 according to a modified second embodiment of the present invention.
- the (first) light blocking layer 23 A has a thickness less than the light guiding layer 25 .
- the (first) light blocking layer 23 A and the light guiding layer 25 partially overlap each other, and the (first) light blocking layer 23 A is partially covered with the light guiding layer 25 .
- FIG. 3D shows another top view of the top emission microLED display 300 according to the second embodiment of the present invention.
- a connecting structure 26 such as conductive electrode, is disposed on a top surface of the microLED 22 in each emission area 24 .
- the connecting structures 26 in the emission areas 24 have the same pattern and the connecting structures 26 in each emission area 24 have the same pattern, which can prevent nonuniform display issue.
- FIG. 4A shows a top view of a top emission microLED display 400 according to a third embodiment of the present invention
- FIG. 4B shows a cross-sectional view of FIG. 4A
- microLEDs 22 e.g., red microLED 22 R, green microLED 22 G and blue microLED 22 B
- a frame-shaped first light blocking layer 23 A surrounds the emission area 24 and is disposed above the (first) main substrate 21 A.
- a blocking substrate 27 is disposed above the (first) main substrate 21 A and the first light blocking layer 23 A.
- a second light blocking layer 23 B which covers areas other than the emission areas 24 and the first light blocking layer 23 A, is disposed on a bottom surface of the blocking substrate 27 .
- the first light blocking layer 23 A and the second light blocking layer 23 B partially overlap each other. Accordingly, an aperture d 1 of the first light blocking layer 23 A is different from (e.g., smaller than) an aperture d 2 of the second light blocking layer 23 B. In another embodiment, the aperture of the first light blocking layer 23 A is greater than the aperture of the second light blocking layer 23 B.
- the first light blocking layer 23 A and the second light blocking layer 23 B may include BM, and the blocking substrate 27 may include transparent material such as quartz, glass or plastic material.
- a light guiding layer 25 is disposed in the emission areas 24 to spread the light emitted by the microLEDs 22 .
- the light guiding layer 25 is entirely formed in the emission areas 24 .
- the first light blocking layer 23 A has a thickness greater than the light guiding layer 25 .
- the light guiding layer 25 has a thickness greater than the microLEDs 22 as shown in FIG. 4B . In another embodiment, however, the light guiding layer 25 has a thickness less than or equal to the microLEDs 22 .
- FIG. 4C shows a cross-sectional view of a top emission microLED display 400 according to a modified third embodiment of the present invention.
- the first light blocking layer 23 A has a thickness less than the light guiding layer 25 .
- the first light blocking layer 23 A is partially covered with the light guiding layer 25 .
- the connecting structures 26 (not shown) in each emission area 24 have the same pattern, which can prevent nonuniform display issue.
- FIG. 5A shows a top view of a top emission microLED display 500 according to a fourth embodiment of the present invention
- FIG. 5B shows a cross-sectional view of FIG. 5A
- the fourth embodiment is similar to the third embodiment with the exception that, in the fourth embodiment, the first light blocking layer 23 A and the second light blocking layer 23 B are disposed between adjacent pixels (instead of adjacent microLEDs 22 ) to prevent interference (e.g., color mixing) between adjacent pixels and to enhance contrast.
- each pixel corresponds to an emission area 24 .
- a frame-shaped first light blocking layer 23 A surrounds the emission area 24 and is disposed above the (first) main substrate 21 A.
- a second light blocking layer 23 B which covers areas other than the emission areas 24 and the first light blocking layer 23 A, is disposed on a bottom surface of the blocking substrate 27 .
- the first light blocking layer 23 A and the second light blocking layer 23 B partially overlap each other. Accordingly, an aperture d 1 of the first light blocking layer 23 A is different from (e.g., smaller than) an aperture d 2 of the second light blocking layer 23 B.
- the first light blocking layer 23 A and the second light blocking layer 23 B may include BM, and the blocking substrate 27 may include transparent material such as quartz, glass or plastic material.
- a light guiding layer 25 is disposed in the emission areas 24 to spread the light emitted by the microLEDs 22 .
- the light guiding layer 25 is entirely formed in the emission areas 24 .
- the first light blocking layer 23 A has a thickness greater than the light guiding layer 25 .
- the light guiding layer 25 has a thickness greater than the microLEDs 22 as shown in FIG. 5B . In another embodiment, however, the light guiding layer 25 has a thickness less than or equal to the microLEDs 22 .
- FIG. 5C shows a cross-sectional view of a top emission microLED display 500 according to a modified fourth embodiment of the present invention.
- the first light blocking layer 23 A has a thickness less than the light guiding layer 25 .
- the first light blocking layer 23 A is partially covered with the light guiding layer 25 .
- the connecting structures 26 (not shown) in the emission areas 24 have the same pattern and the connecting structures 26 in each emission area 24 have the same pattern, which can prevent nonuniform display issue.
- FIG. 6 shows a cross-sectional view of a top emission microLED display 600 according to a fifth embodiment of the present invention.
- the top emission microLED display 600 may include a first main substrate 21 A and a second main substrate 21 B, which are disposed at a same level but correspond to distinct microLED displays, respectively.
- a first light blocking layer 23 A is disposed above the first main substrate 21 A and the second main substrate 21 B.
- the top emission microLED display 600 may include a second light blocking layer 23 B, which covers areas other than the emission areas 24 and the first light blocking layer 23 A, being disposed on a bottom surface of the blocking substrate 27 . As shown in FIG.
- the first main substrate 21 A and the second main substrate 21 B correspond to the same blocking substrate 27
- the first light blocking layer 23 A of the first main substrate 21 A and the second light blocking layer 23 B of the second main substrate 21 B correspond to the same second light blocking layer 23 B at a joint of the first main substrate 21 A and the second main substrate 21 B. Accordingly, multiple microLED displays may be joined to become a seamless top emission microLED display 600 .
- FIG. 7A to FIG. 13B show top views and cross-sectional views illustrating steps of forming a top emission microLED display according to one embodiment of the present invention.
- a (first) main substrate 21 A which defines an emission area 24 .
- a bottom common electrode layer 28 is formed on a top surface of the (first) main substrate 21 A. According to one aspect of the embodiment, the bottom common electrode layer 28 entirely covers the emission area 24 to prevent nonuniform display issue.
- microLEDs 12 e.g., red microLED 12 R, green microLED 12 G and blue microLED 12 B
- a (first) light blocking layer 23 A is disposed in an area other than the emission area 24 to prevent interference (e.g., color mixing) between adjacent pixels and to enhance contrast.
- a light guiding layer 25 is disposed in the emission areas 24 to spread the light emitted by the microLEDs 22 .
- the light guiding layer 25 is entirely formed in the emission areas 24 .
- the light guiding layer 25 has a thickness greater than the microLEDs 22 as shown in FIG. 11B . In another embodiment, however, the light guiding layer 25 has a thickness less than or equal to the microLEDs 22 . It is noted that the order of forming the (first) light blocking layer 23 A ( FIG. 10A and FIG. 10B ) and forming the light guiding layer 25 ( FIG. 11A and FIG. 11B ) may be exchanged.
- connection holes are formed above the microLEDs 22 .
- connecting structures 26 are formed to connect the microLED 22 .
- the connecting structures 26 have the same pattern and the connecting structures 26 in each emission area 24 have the same pattern, which can prevent nonuniform display issue.
- FIG. 14 schematically shows a side view of a bottom emission micro light-emitting diode (microLED) display 1400 .
- microLEDs 12 e.g., red microLED 12 R, green microLED 12 G and blue microLED 12 B
- the display 1400 is called a bottom emission microLED display.
- the microLEDs 12 have a size of 1-10 micrometers, which may be decreased or increased according to specific applications or technological development in the future.
- FIG. 15A shows a top view of a bottom emission microLED display 1500 according to a sixth embodiment of the present invention
- FIG. 15B shows a cross-sectional view of FIG. 15A
- microLEDs 22 e.g., red microLED 22 R, green microLED 22 G and blue microLED 22 B
- a (first) light blocking layer 23 A is disposed between adjacent microLEDs 22 and above the (first) main substrate 21 A to prevent interference (e.g., color mixing) between adjacent microLEDs 22 and to enhance contrast.
- a top common electrode layer 28 may be disposed above the microLEDs 22 and the light blocking layer 23 A.
- the (first) light blocking layer 23 A of the embodiment may include black matrix (BM).
- black resin is first formed, followed by adopting photo process and curing process to form the BM (first) light blocking layer 23 A.
- ink-jet printing technique and curing process are adopted to form the BM (first) light blocking layer 23 A.
- the (first) light blocking layer 23 A defines emission areas 24 , which are not covered with the (first) light blocking layer 23 A. In other words, areas other than the emission areas 24 are covered with the (first) light blocking layer 23 A.
- a light guiding layer 25 composed of light guiding material, is disposed in the emission areas 24 to spread the light emitted by the microLEDs 22 .
- the light guiding material is transparent with high refractive index. In the embodiment, the light guiding layer 25 is entirely formed in the emission areas 24 .
- the (first) light blocking layer 23 A has a thickness greater than the light guiding layer 25 .
- the light guiding layer 25 has a thickness greater than the microLEDs 22 as shown in FIG. 15B . In another embodiment, however, the light guiding layer 25 has a thickness less than or equal to the microLEDs 22 .
- FIG. 15C shows a cross-sectional view of a bottom emission microLED display 1500 according to a modified sixth embodiment of the present invention.
- the (first) light blocking layer 23 A has a thickness less than the light guiding layer 25 .
- the (first) light blocking layer 23 A and the light guiding layer 25 partially overlap each other, and the (first) light blocking layer 23 A is partially covered with the light guiding layer 25 .
- a chromium/chromium oxide film is first formed, followed by adopting photo etching technique to form the BM (first) light blocking layer 23 A.
- FIG. 15D shows another top view of the bottom emission microLED display 1500 according to the sixth embodiment of the present invention.
- a connecting structure 26 such as conductive electrode, is disposed between the microLEDs 22 and the main substrate 21 A in each emission area 24 .
- the connecting structure 26 may include transparent material (e.g., indium tin oxide), opaque material (e.g., metal) or reflective material.
- the connecting structures 26 in the emission areas 24 have the same pattern, which can prevent nonuniform display issue.
- FIG. 16A shows a top view of a bottom emission microLED display 1600 according to a seventh embodiment of the present invention
- FIG. 16B shows a cross-sectional view of FIG. 16A
- the seventh embodiment is similar to the sixth embodiment with the exception that, in the seventh embodiment, the (first) light blocking layer 23 A is disposed between adjacent pixels (instead of adjacent microLEDs 22 ) to prevent interference (e.g., color mixing) between adjacent pixels and to enhance contrast.
- the (first) light blocking layer 23 A defines emission areas 24 , which are not covered with the (first) light blocking layer 23 A. In other words, areas other than the emission areas 24 are covered with the (first) light blocking layer 23 A. In the embodiment, the light guiding layer 25 is entirely formed in the emission areas 24 .
- the (first) light blocking layer 23 A has a thickness greater than the light guiding layer 25 .
- the light guiding layer 25 has a thickness greater than the microLEDs 22 as shown in FIG. 16B . In another embodiment, however, the light guiding layer 25 has a thickness less than or equal to the microLEDs 22 .
- FIG. 16C shows a cross-sectional view of a bottom emission microLED display 1600 according to a modified seventh embodiment of the present invention.
- the (first) light blocking layer 23 A has a thickness less than the light guiding layer 25 .
- the (first) light blocking layer 23 A and the light guiding layer 25 partially overlap each other, and the (first) light blocking layer 23 A is partially covered with the light guiding layer 25 .
- FIG. 16D shows another top view of the bottom emission microLED display 1600 according to the seventh embodiment of the present invention.
- a connecting structure 26 such as conductive electrode, is disposed on a top surface of the microLED 22 in each emission area 24 .
- the connecting structures 26 in the emission areas 24 have the same pattern and the connecting structures 26 in each emission area 24 have the same pattern, which can prevent nonuniform display issue.
- FIG. 17A shows a top view of a bottom emission microLED display 1700 according to an eighth embodiment of the present invention
- FIG. 17B shows a cross-sectional view of FIG. 17A
- microLEDs 22 e.g., red microLED 22 R, green microLED 22 G and blue microLED 22 B
- a frame-shaped first light blocking layer 23 A surrounds the emission area 24 and is disposed above the (first) main substrate 21 A.
- a blocking substrate 27 is disposed below the (first) main substrate 21 A.
- a second light blocking layer 23 B which covers areas other than the emission areas 24 and the first light blocking layer 23 A, is disposed on a top surface of the blocking substrate 27 .
- the first light blocking layer 23 A and the second light blocking layer 23 B partially overlap each other. Accordingly, an aperture d 1 of the first light blocking layer 23 A is different from (e.g., smaller than) an aperture d 2 of the second light blocking layer 23 B.
- the aperture of the first light blocking layer 23 A is greater than the aperture of the second light blocking layer 23 B.
- the first light blocking layer 23 A and the second light blocking layer 23 B may include BM, and the blocking substrate 27 may include transparent material such as quartz, glass or plastic material.
- a light guiding layer 25 is disposed in the emission areas 24 to spread the light emitted by the microLEDs 22 .
- the light guiding layer 25 is entirely formed in the emission areas 24 .
- the first light blocking layer 23 A has a thickness greater than the light guiding layer 25 .
- the light guiding layer 25 has a thickness greater than the microLEDs 22 as shown in FIG. 17B . In another embodiment, however, the light guiding layer 25 has a thickness less than or equal to the microLEDs 22 .
- FIG. 17C shows a cross-sectional view of a bottom emission microLED display 1700 according to a modified eighth embodiment of the present invention.
- the first light blocking layer 23 A has a thickness less than the light guiding layer 25 .
- the first light blocking layer 23 A is partially covered with the light guiding layer 25 .
- the connecting structures 26 (not shown) in each emission area 24 have the same pattern, which can prevent nonuniform display issue.
- FIG. 18A shows a top view of a bottom emission microLED display 1800 according to a ninth embodiment of the present invention
- FIG. 18B shows a cross-sectional view of FIG. 18A
- the ninth embodiment is similar to the eighth embodiment with the exception that, in the ninth embodiment, the first light blocking layer 23 A and the second light blocking layer 23 B are disposed between adjacent pixels (instead of adjacent microLEDs 22 ) to prevent interference (e.g., color mixing) between adjacent pixels and to enhance contrast.
- each pixel corresponds to an emission area 24 .
- a frame-shaped first light blocking layer 23 A surrounds the emission area 24 and is disposed above the (first) main substrate 21 A.
- a second light blocking layer 23 B which covers areas other than the emission areas 24 and the first light blocking layer 23 A, is disposed on a top surface of the blocking substrate 27 .
- the first light blocking layer 23 A and the second light blocking layer 23 B partially overlap each other. Accordingly, an aperture d 1 of the first light blocking layer 23 A is different from (e.g., smaller than) an aperture d 2 of the second light blocking layer 23 B.
- the first light blocking layer 23 A and the second light blocking layer 23 B may include BM, and the blocking substrate 27 may include transparent material such as quartz, glass or plastic material.
- a light guiding layer 25 is disposed in the emission areas 24 to spread the light emitted by the microLEDs 22 .
- the light guiding layer 25 is entirely formed in the emission areas 24 .
- the first light blocking layer 23 A has a thickness greater than the light guiding layer 25 .
- the light guiding layer 25 has a thickness greater than the microLEDs 22 as shown in FIG. 18B . In another embodiment, however, the light guiding layer 25 has a thickness less than or equal to the microLEDs 22 .
- FIG. 18C shows a cross-sectional view of a bottom emission microLED display 1800 according to a modified ninth embodiment of the present invention.
- the first light blocking layer 23 A has a thickness less than the light guiding layer 25 .
- the first light blocking layer 23 A is partially covered with the light guiding layer 25 .
- the connecting structures 26 (not shown) in the emission areas 24 have the same pattern and the connecting structures 26 in each emission area 24 have the same pattern, which can prevent nonuniform display issue.
- FIG. 19 shows a cross-sectional view of a bottom emission microLED display 1900 according to a tenth embodiment of the present invention.
- the bottom emission microLED display 1900 may include a first main substrate 21 A and a second main substrate 21 B, which are disposed at a same level but correspond to distinct microLED displays, respectively.
- a first light blocking layer 23 A is disposed above the first main substrate 21 A and the second main substrate 21 B.
- the bottom emission microLED display 1900 may include a second light blocking layer 23 B, which covers areas other than the emission areas 24 and the first light blocking layer 23 A, being disposed on a top surface of the blocking substrate 27 . As shown in FIG.
- the first main substrate 21 A and the second main substrate 21 B correspond to the same blocking substrate 27
- the first light blocking layer 23 A of the first main substrate 21 A and the second light blocking layer 23 B of the second main substrate 21 B correspond to the same second light blocking layer 23 B at a joint of the first main substrate 21 A and the second main substrate 21 B. Accordingly, multiple microLED displays may be joined to become a seamless bottom emission microLED display 1900 .
- FIG. 20A to FIG. 26B show top views and cross-sectional views illustrating steps of forming a bottom emission microLED display according to one embodiment of the present invention.
- a (first) main substrate 21 A which defines an emission area 24 .
- connecting structures 26 are formed to connect the microLED 22 .
- the connecting structures 26 have the same pattern and the connecting structures 26 in each emission area 24 have the same pattern, which can prevent nonuniform display issue.
- microLEDs 12 e.g., red microLED 12 R, green microLED 12 G and blue microLED 12 B
- a (first) light blocking layer 23 A is disposed in an area other than the emission area 24 to prevent interference (e.g., color mixing) between adjacent pixels and to enhance contrast.
- a light guiding layer 25 is disposed in the emission areas 24 to spread the light emitted by the microLEDs 22 .
- the light guiding layer 25 is entirely formed in the emission areas 24 .
- the light guiding layer 25 has a thickness greater than the microLEDs 22 as shown in FIG. 24B . In another embodiment, however, the light guiding layer 25 has a thickness less than or equal to the microLEDs 22 . It is noted that the order of forming the (first) light blocking layer 23 A ( FIG. 23A and FIG. 23B ) and forming the light guiding layer 25 ( FIG. 24A and FIG. 24B ) may be exchanged.
- top common electrode layer 28 is formed above the light guiding layer 25 .
- the top common electrode layer 28 entirely covers the emission area 24 to prevent nonuniform display issue.
- FIG. 27 shows a cross-sectional view of a bottom emission microLED display 2000 according to an eleventh embodiment of the present invention.
- the bottom emission microLED display 2000 of the present embodiment may include at least one shielding layer 30 for blocking electromagnetic interference (EMI).
- the shielding layer 30 may include transparent conductive material such as transparent conductive oxide (e.g., indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum doped Zinc Oxide (AZO)).
- transparent conductive oxide e.g., indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum doped Zinc Oxide (AZO)
- the shielding layer 30 may be disposed between a top surface of the first main substrate 21 A and first light blocking layer 23 A.
- the shielding layer 30 may be electrically insulated from the top common electrode layer 28 by an insulating layer 29 , and may be electrically insulated from the connecting structure 26 by an insulating layer 31 .
- the shielding layer 30 may be disposed between a top surface of the second main substrate 21 B and first light blocking layer 23 A.
- the shielding layer 30 may be electrically insulated from the top common electrode layer 28 by an insulating layer 29 , and may be electrically insulated from the connecting structure 26 by an insulating layer 31 .
- the shielding layer 30 may be disposed between a top surface of the blocking substrate 27 and the second light blocking layer 23 B.
- the shielding layer 30 may be disposed in one or more areas mentioned above.
- the shielding layer 30 may be adaptable to a top emission microLED display.
- FIG. 28 shows a cross-sectional view of a top emission microLED display 2100 according to a twelfth embodiment of the present invention.
- the top emission microLED display 2100 of the present embodiment may include at least one shielding layer 30 for blocking electromagnetic interference (EMI).
- the shielding layer 30 may include transparent conductive material such as transparent conductive oxide (e.g., indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum doped Zinc Oxide (AZO)).
- the shielding layer 30 may be disposed between a bottom surface of the blocking substrate 27 and the second light blocking layer 23 B.
- FIG. 29 shows a cross-sectional view of a bottom emission microLED display 2900 according to a thirteenth embodiment of the present invention.
- the bottom emission microLED display 2900 of the present embodiment may include an anti-floodlight layer 32 disposed on a bottom surface of the first main substrate 21 A and between adjacent microLEDs 22 .
- the anti-floodlight layer 32 may be disposed on the first main substrate 21 A opposite the (first) light blocking layer 23 A.
- FIG. 30 shows a cross-sectional view of a bottom emission microLED display 2900 according to a modified thirteenth embodiment of the present invention. Compared to FIG.
- the bottom emission microLED display 2900 of the present embodiment may include an anti-floodlight layer 32 disposed on a bottom surface of the first main substrate 21 A and between adjacent microLEDs 22 .
- the anti-floodlight layer 32 may be disposed on the first main substrate 21 A opposite the (first) light blocking layer 23 A.
- the anti-floodlight layer 32 of the embodiment may absorb lateral diffused light and effectively avoid floodlight issue.
- the anti-floodlight layer 32 of the embodiment may include BM.
- a chromium/chromium oxide film is first formed, followed by adopting photo etching technique to form the BM anti-floodlight layer 32 .
- black resin is first formed, followed by adopting photo process and curing process to form the BM anti-floodlight layer 32 .
- ink-jet printing technique and curing process are adopted to form the BM anti-floodlight layer 32 .
- the anti-floodlight layer 32 may be directly formed on the first main substrate 21 A, or may be first formed on another substrate, which is then attached on the first main substrate 21 A.
- FIG. 31 shows a cross-sectional view of a bottom emission microLED display 3100 according to a fourteenth embodiment of the present invention.
- the bottom emission microLED display 3100 of the present embodiment may include an anti-floodlight layer 32 disposed on a bottom surface of the first main substrate 21 A and between adjacent pixels.
- the anti-floodlight layer 32 may be disposed on the first main substrate 21 A opposite the (first) light blocking layer 23 A.
- the bottom emission microLED display 3100 of the present embodiment may include an anti-floodlight layer 32 disposed on a bottom surface of the first main substrate 21 A and between adjacent pixels.
- the anti-floodlight layer 32 may be disposed on the first main substrate 21 A opposite the (first) light blocking layer 23 A.
Abstract
A microLED display includes a first main substrate, microLEDs disposed above the first main substrate, a first light blocking layer disposed above the first main substrate to define emission areas, a light guiding layer disposed in the emission areas, and a plurality of connecting structures disposed in the emission areas respectively and electrically connected with the microLEDs.
Description
- This application is a continuation application of U.S. application Ser. No. 16/128,255, filed on Sep. 11, 2018, the entire contents of which are herein expressly incorporated by reference.
- The present invention generally relates to a light-emitting diode (LED) display, and more particularly to a top emission microLED display and a bottom emission microLED display.
- A micro light-emitting diode (microLED, mLED or μLED) display panel is one type of flat display panel, which is composed of microscopic microLEDs each having a size of 1-10 micrometers.
- Compared to conventional liquid crystal display panels, the microLED display panels offer better contrast, response time and energy efficiency. Although both organic light-emitting diodes (OLEDs) and microLEDs possess good energy efficiency, the microLEDs, based on group III/V (e.g., GaN) LED technology, offer higher brightness, higher luminous efficacy and longer lifespan than the OLEDs.
- Active matrix using thin-film transistors (TFT) may be used in companion with microLEDs to drive a display panel. However, microLED is made by flip chip technology, while TFT is made by complementary metal-oxide-semiconductor (CMOS) process which is more complex than flip chip technology. These two distinct technologies may cause thermal mismatch. A drive current of the microLED is small in gray display, which may be significantly affected by leakage current.
- Passive matrix is another driving method performed by a row drive circuit and a column drive circuit, which are disposed on the periphery of a display panel. When the size or the resolution of the display panel increases, output loading and delay of the drive circuits increase accordingly, causing the display panel to malfunction. Therefore, passive matrix is not suitable for large-size microLED display panels.
- A need has thus arisen to propose a novel microLED display panel, particularly a large-size or high-resolution display panel, which is capable of maintaining advantages of microLEDs and overcoming disadvantages of driving schemes.
- As adjacent microLEDs are near to each other, interference (e.g., color mixing) between adjacent microLEDs may happen and thus decrease contrast ratio. Moreover, non-uniform display may happen due to connecting wires composed of opaque or reflective material that connecting the microLEDs with other components or circuits.
- A need has thus arisen to propose a novel microLED display with luminous efficacy improvement over the conventional microLED displays.
- In view of the foregoing, it is an object of the embodiment of the present invention to provide structures and forming methods of a top emission microLED display and a bottom emission microLED display capable of prevent interference, color mixing and non-uniform display issues.
- According to one embodiment, a top emission microLED display includes a first main substrate; a bottom common electrode layer disposed on a top surface of the first main substrate; a plurality of microLEDs disposed on the bottom common electrode layer; a first light blocking layer disposed on the bottom common electrode layer to define a plurality of emission areas; a light guiding layer disposed in the emission areas; and a plurality of connecting structures disposed in the emission areas respectively and electrically connected with the microLEDs.
- According to another embodiment, a bottom emission microLED display includes a first main substrate; a plurality of microLEDs disposed above the first main substrate; a first light blocking layer disposed above the first main substrate to define a plurality of emission areas; a light guiding layer disposed in the emission areas; a plurality of connecting structures disposed in the emission areas respectively and electrically connected with the microLEDs; and a top common electrode layer disposed above the first light blocking layer and the microLEDs.
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FIG. 1 schematically shows a side view of a top emission microLED display; -
FIG. 2A shows a top view of a top emission microLED display according to a first embodiment of the present invention; -
FIG. 2B shows a cross-sectional view ofFIG. 2A ; -
FIG. 2C shows a cross-sectional view of a top emission microLED display according to a modified first embodiment of the present invention; -
FIG. 2D shows another top view of the top emission microLED display according to the first embodiment of the present invention; -
FIG. 3A shows a top view of a top emission microLED display according to a second embodiment of the present invention; -
FIG. 3B shows a cross-sectional view ofFIG. 3A ; -
FIG. 3C shows a cross-sectional view of a top emission microLED display according to a modified second embodiment of the present invention; -
FIG. 3D shows another top view of the top emission microLED display according to the second embodiment of the present invention; -
FIG. 4A shows a top view of a top emission microLED display according to a third embodiment of the present invention; -
FIG. 4B shows a cross-sectional view ofFIG. 4A ; -
FIG. 4C shows a cross-sectional view of a top emission microLED display according to a modified third embodiment of the present invention; -
FIG. 5A shows a top view of a top emission microLED display according to a fourth embodiment of the present invention; -
FIG. 5B shows a cross-sectional view ofFIG. 5A ; -
FIG. 5C shows a cross-sectional view of a top emission microLED display according to a modified fourth embodiment of the present invention; -
FIG. 6 shows a cross-sectional view of a top emission microLED display according to a fifth embodiment of the present invention; -
FIG. 7A toFIG. 13B show top views and cross-sectional views illustrating steps of forming a top emission microLED display according to one embodiment of the present invention; -
FIG. 14 schematically shows a side view of a bottom emission micro light-emitting diode (microLED) display; -
FIG. 15A shows a top view of a bottom emission microLED display according to a sixth embodiment of the present invention; -
FIG. 15B shows a cross-sectional view ofFIG. 15A ; -
FIG. 15C shows a cross-sectional view of a bottom emission microLED display according to a modified sixth embodiment of the present invention; -
FIG. 15D shows another top view of the bottom emission microLED display according to the sixth embodiment of the present invention; -
FIG. 16A shows a top view of a bottom emission microLED display according to a seventh embodiment of the present invention; -
FIG. 16B shows a cross-sectional view ofFIG. 16A ; -
FIG. 16C shows a cross-sectional view of a bottom emission microLED display according to a modified seventh embodiment of the present invention; -
FIG. 16D shows another top view of the bottom emission microLED display according to the seventh embodiment of the present invention; -
FIG. 17A shows a top view of a bottom emission microLED display according to an eighth embodiment of the present invention; -
FIG. 17B shows a cross-sectional view ofFIG. 17A ; -
FIG. 17C shows a cross-sectional view of a bottom emission microLED display according to a modified eighth embodiment of the present invention; -
FIG. 18A shows a top view of a bottom emission microLED display according to a ninth embodiment of the present invention; -
FIG. 18B shows a cross-sectional view ofFIG. 18A ; -
FIG. 18C shows a cross-sectional view of a bottom emission microLED display according to a modified ninth embodiment of the present invention; -
FIG. 19 shows a cross-sectional view of a bottom emission microLED display according to a tenth embodiment of the present invention; -
FIG. 20A toFIG. 26B show top views and cross-sectional views illustrating steps of forming a bottom emission microLED display according to one embodiment of the present invention; -
FIG. 27 shows a cross-sectional view of a bottom emission microLED display according to an eleventh embodiment of the present invention; -
FIG. 28 shows a cross-sectional view of a top emission microLED display according to a twelfth embodiment of the present invention; -
FIG. 29 shows a cross-sectional view of a bottom emission microLED display according to a thirteenth embodiment of the present invention; -
FIG. 30 shows a cross-sectional view of a bottom emission microLED display according to a modified thirteenth embodiment of the present invention; -
FIG. 31 shows a cross-sectional view of a bottom emission microLED display according to a fourteenth embodiment of the present invention; and -
FIG. 32 shows a cross-sectional view of a bottom emission microLED display according to a modified fourteenth embodiment of the present invention. -
FIG. 1 schematically shows a side view of a top emission micro light-emitting diode (microLED)display 100. In the embodiment, microLEDs 12 (e.g.,red microLED 12R,green microLED 12G andblue microLED 12B) may be disposed on a top surface of amain substrate 11 by a bonding technique. As themicroLEDs 12 emit light upward (as shown by arrows) against the top surface of themain substrate 11, thedisplay 100 is called a top emission microLED display. In the specification, themicroLEDs 12 have a size of 1-10 micrometers, which may be decreased or increased according to specific applications or technological development in the future. -
FIG. 2A shows a top view of a topemission microLED display 200 according to a first embodiment of the present invention, andFIG. 2B shows a cross-sectional view ofFIG. 2A . In the embodiment, microLEDs 22 (e.g.,red microLED 22R,green microLED 22G andblue microLED 22B) may be disposed above a (first)main substrate 21A. A (first)light blocking layer 23A is disposed between adjacent microLEDs 22 and above the (first)main substrate 21A to prevent interference (e.g., color mixing) between adjacent microLEDs 22 and to enhance contrast. A bottomcommon electrode layer 28 may be disposed between themain substrate 21A and themicroLEDs 22. In the present embodiment (and the following embodiments), themicroLED 22 may be a rectangle, for example, with a length of 25 micrometers and a width of 10 micrometers. According to one aspect of the embodiment, themicroLEDs 22 may be disposed longitudinally. That is, the length of themicroLED 22 is parallel to the longitude of thedisplay 200, and the width of the microLED is parallel to the latitude of thedisplay 200. As human eyes are more sensitive to vertically emitted light than horizontally emitted light, thedisplay 200 of the embodiment can enhance viewing angle. - The (first)
light blocking layer 23A of the embodiment may include black matrix (BM). In the embodiment shown inFIG. 2B , black resin is first formed, followed by adopting photo process and curing process to form the BM (first)light blocking layer 23A. In another embodiment, ink-jet printing technique and curing process are adopted to form the BM (first)light blocking layer 23A. - The (first)
light blocking layer 23A definesemission areas 24, which are not covered with the (first)light blocking layer 23A. In other words, areas other than theemission areas 24 are covered with the (first)light blocking layer 23A. Alight guiding layer 25, composed of light guiding material, is disposed in theemission areas 24 to spread the light emitted by themicroLEDs 22. The light guiding material is transparent with high refractive index. In the embodiment, thelight guiding layer 25 is entirely formed in theemission areas 24. - In the embodiment, the (first)
light blocking layer 23A has a thickness greater than thelight guiding layer 25. Further, thelight guiding layer 25 has a thickness greater than or equal to themicroLEDs 22. -
FIG. 2C shows a cross-sectional view of a topemission microLED display 200 according to a modified first embodiment of the present invention. In the embodiment shown inFIG. 2C , the (first)light blocking layer 23A has a thickness less than thelight guiding layer 25. Moreover, the (first)light blocking layer 23A and thelight guiding layer 25 partially overlap each other, and the (first)light blocking layer 23A is partially covered with thelight guiding layer 25. In the embodiment shown inFIG. 2C , a chromium/chromium oxide film is first formed, followed by adopting photo etching technique to form the BM (first)light blocking layer 23A. -
FIG. 2D shows another top view of the topemission microLED display 200 according to the first embodiment of the present invention. A connectingstructure 26, such as conductive electrode, is disposed on a top surface of themicroLED 22 in eachemission area 24. The connectingstructure 26 may include transparent material (e.g., indium tin oxide), opaque material (e.g., metal) or reflective material. According to one aspect of the embodiment, the connectingstructures 26 in theemission areas 24 have the same pattern, which can prevent nonuniform display issue. -
FIG. 3A shows a top view of a topemission microLED display 300 according to a second embodiment of the present invention, andFIG. 3B shows a cross-sectional view ofFIG. 3A . The second embodiment is similar to the first embodiment with the exception that, in the second embodiment, the (first)light blocking layer 23A is disposed between adjacent pixels (instead of adjacent microLEDs 22) to prevent interference (e.g., color mixing) between adjacent pixels and to enhance contrast. - The (first)
light blocking layer 23A definesemission areas 24, which are not covered with the (first)light blocking layer 23A. In other words, areas other than theemission areas 24 are covered with the (first)light blocking layer 23A. In the embodiment, thelight guiding layer 25 is entirely formed in theemission areas 24. - In the embodiment, the (first)
light blocking layer 23A has a thickness greater than thelight guiding layer 25. Further, thelight guiding layer 25 has a thickness greater than themicroLEDs 22 as shown inFIG. 3B . In another embodiment, however, thelight guiding layer 25 has a thickness less than or equal to themicroLEDs 22. -
FIG. 3C shows a cross-sectional view of a topemission microLED display 300 according to a modified second embodiment of the present invention. In the embodiment shown inFIG. 3C , the (first)light blocking layer 23A has a thickness less than thelight guiding layer 25. Moreover, the (first)light blocking layer 23A and thelight guiding layer 25 partially overlap each other, and the (first)light blocking layer 23A is partially covered with thelight guiding layer 25. -
FIG. 3D shows another top view of the topemission microLED display 300 according to the second embodiment of the present invention. A connectingstructure 26, such as conductive electrode, is disposed on a top surface of themicroLED 22 in eachemission area 24. According to one aspect of the embodiment, the connectingstructures 26 in theemission areas 24 have the same pattern and the connectingstructures 26 in eachemission area 24 have the same pattern, which can prevent nonuniform display issue. -
FIG. 4A shows a top view of a topemission microLED display 400 according to a third embodiment of the present invention, andFIG. 4B shows a cross-sectional view ofFIG. 4A . In the embodiment, microLEDs 22 (e.g.,red microLED 22R,green microLED 22G andblue microLED 22B) may be disposed above a (first)main substrate 21A. EachmicroLED 22 corresponds to anemission area 24. In the embodiment, a frame-shaped firstlight blocking layer 23A surrounds theemission area 24 and is disposed above the (first)main substrate 21A. In the embodiment, a blockingsubstrate 27 is disposed above the (first)main substrate 21A and the firstlight blocking layer 23A. A secondlight blocking layer 23B, which covers areas other than theemission areas 24 and the firstlight blocking layer 23A, is disposed on a bottom surface of the blockingsubstrate 27. The firstlight blocking layer 23A and the secondlight blocking layer 23B partially overlap each other. Accordingly, an aperture d1 of the firstlight blocking layer 23A is different from (e.g., smaller than) an aperture d2 of the secondlight blocking layer 23B. In another embodiment, the aperture of the firstlight blocking layer 23A is greater than the aperture of the secondlight blocking layer 23B. In the embodiment, the firstlight blocking layer 23A and the secondlight blocking layer 23B may include BM, and the blockingsubstrate 27 may include transparent material such as quartz, glass or plastic material. - A
light guiding layer 25, composed of light guiding material, is disposed in theemission areas 24 to spread the light emitted by themicroLEDs 22. In the embodiment, thelight guiding layer 25 is entirely formed in theemission areas 24. - In the embodiment, the first
light blocking layer 23A has a thickness greater than thelight guiding layer 25. Further, thelight guiding layer 25 has a thickness greater than themicroLEDs 22 as shown inFIG. 4B . In another embodiment, however, thelight guiding layer 25 has a thickness less than or equal to themicroLEDs 22. -
FIG. 4C shows a cross-sectional view of a topemission microLED display 400 according to a modified third embodiment of the present invention. In the embodiment shown inFIG. 4C , the firstlight blocking layer 23A has a thickness less than thelight guiding layer 25. Moreover, the firstlight blocking layer 23A is partially covered with thelight guiding layer 25. - According to one aspect of the embodiment, the connecting structures 26 (not shown) in each
emission area 24 have the same pattern, which can prevent nonuniform display issue. -
FIG. 5A shows a top view of a topemission microLED display 500 according to a fourth embodiment of the present invention, andFIG. 5B shows a cross-sectional view ofFIG. 5A . The fourth embodiment is similar to the third embodiment with the exception that, in the fourth embodiment, the firstlight blocking layer 23A and the secondlight blocking layer 23B are disposed between adjacent pixels (instead of adjacent microLEDs 22) to prevent interference (e.g., color mixing) between adjacent pixels and to enhance contrast. - In the embodiment, each pixel (which includes
red microLED 22R,green microLED 22G andblue microLED 22B) corresponds to anemission area 24. In the embodiment, a frame-shaped firstlight blocking layer 23A surrounds theemission area 24 and is disposed above the (first)main substrate 21A. In the embodiment, a secondlight blocking layer 23B, which covers areas other than theemission areas 24 and the firstlight blocking layer 23A, is disposed on a bottom surface of the blockingsubstrate 27. The firstlight blocking layer 23A and the secondlight blocking layer 23B partially overlap each other. Accordingly, an aperture d1 of the firstlight blocking layer 23A is different from (e.g., smaller than) an aperture d2 of the secondlight blocking layer 23B. In the embodiment, the firstlight blocking layer 23A and the secondlight blocking layer 23B may include BM, and the blockingsubstrate 27 may include transparent material such as quartz, glass or plastic material. - A
light guiding layer 25, composed of light guiding material, is disposed in theemission areas 24 to spread the light emitted by themicroLEDs 22. In the embodiment, thelight guiding layer 25 is entirely formed in theemission areas 24. - In the embodiment, the first
light blocking layer 23A has a thickness greater than thelight guiding layer 25. Further, thelight guiding layer 25 has a thickness greater than themicroLEDs 22 as shown inFIG. 5B . In another embodiment, however, thelight guiding layer 25 has a thickness less than or equal to themicroLEDs 22. -
FIG. 5C shows a cross-sectional view of a topemission microLED display 500 according to a modified fourth embodiment of the present invention. In the embodiment shown inFIG. 5C , the firstlight blocking layer 23A has a thickness less than thelight guiding layer 25. Moreover, the firstlight blocking layer 23A is partially covered with thelight guiding layer 25. - According to one aspect of the embodiment, the connecting structures 26 (not shown) in the
emission areas 24 have the same pattern and the connectingstructures 26 in eachemission area 24 have the same pattern, which can prevent nonuniform display issue. -
FIG. 6 shows a cross-sectional view of a topemission microLED display 600 according to a fifth embodiment of the present invention. In the embodiment, the topemission microLED display 600 may include a firstmain substrate 21A and a secondmain substrate 21B, which are disposed at a same level but correspond to distinct microLED displays, respectively. A firstlight blocking layer 23A is disposed above the firstmain substrate 21A and the secondmain substrate 21B. Similar to the fourth embodiment, the topemission microLED display 600 may include a secondlight blocking layer 23B, which covers areas other than theemission areas 24 and the firstlight blocking layer 23A, being disposed on a bottom surface of the blockingsubstrate 27. As shown inFIG. 6 , the firstmain substrate 21A and the secondmain substrate 21B correspond to thesame blocking substrate 27, and the firstlight blocking layer 23A of the firstmain substrate 21A and the secondlight blocking layer 23B of the secondmain substrate 21B correspond to the same secondlight blocking layer 23B at a joint of the firstmain substrate 21A and the secondmain substrate 21B. Accordingly, multiple microLED displays may be joined to become a seamless topemission microLED display 600. -
FIG. 7A toFIG. 13B show top views and cross-sectional views illustrating steps of forming a top emission microLED display according to one embodiment of the present invention. As shown inFIG. 7A andFIG. 7B , a (first)main substrate 21A, which defines anemission area 24, is provided. As shown inFIG. 8A andFIG. 8B , a bottomcommon electrode layer 28 is formed on a top surface of the (first)main substrate 21A. According to one aspect of the embodiment, the bottomcommon electrode layer 28 entirely covers theemission area 24 to prevent nonuniform display issue. - As shown in
FIG. 9A andFIG. 9B , microLEDs 12 (e.g.,red microLED 12R,green microLED 12G andblue microLED 12B) are disposed on a top surface of the bottomcommon electrode layer 28 by a bonding technique. As shown inFIG. 10A andFIG. 10B , a (first)light blocking layer 23A is disposed in an area other than theemission area 24 to prevent interference (e.g., color mixing) between adjacent pixels and to enhance contrast. - As shown in
FIG. 11A andFIG. 11B , alight guiding layer 25 is disposed in theemission areas 24 to spread the light emitted by themicroLEDs 22. In the embodiment, thelight guiding layer 25 is entirely formed in theemission areas 24. Thelight guiding layer 25 has a thickness greater than themicroLEDs 22 as shown inFIG. 11B . In another embodiment, however, thelight guiding layer 25 has a thickness less than or equal to themicroLEDs 22. It is noted that the order of forming the (first)light blocking layer 23A (FIG. 10A andFIG. 10B ) and forming the light guiding layer 25 (FIG. 11A andFIG. 11B ) may be exchanged. - As shown in
FIG. 12A andFIG. 12B , contact holes are formed above themicroLEDs 22. Next, as shown inFIG. 13A andFIG. 13B , connectingstructures 26 are formed to connect themicroLED 22. The connectingstructures 26 have the same pattern and the connectingstructures 26 in eachemission area 24 have the same pattern, which can prevent nonuniform display issue. -
FIG. 14 schematically shows a side view of a bottom emission micro light-emitting diode (microLED)display 1400. In the embodiment, microLEDs 12 (e.g.,red microLED 12R,green microLED 12G andblue microLED 12B) may be disposed above amain substrate 11 by a bonding technique. As themicroLEDs 12 emit light downward (as shown by arrows) against the top surface of themain substrate 11, thedisplay 1400 is called a bottom emission microLED display. In the specification, themicroLEDs 12 have a size of 1-10 micrometers, which may be decreased or increased according to specific applications or technological development in the future. -
FIG. 15A shows a top view of a bottomemission microLED display 1500 according to a sixth embodiment of the present invention, andFIG. 15B shows a cross-sectional view ofFIG. 15A . In the embodiment, microLEDs 22 (e.g.,red microLED 22R,green microLED 22G andblue microLED 22B) may be disposed on a top surface of a (first)main substrate 21A. A (first)light blocking layer 23A is disposed between adjacent microLEDs 22 and above the (first)main substrate 21A to prevent interference (e.g., color mixing) between adjacent microLEDs 22 and to enhance contrast. A topcommon electrode layer 28 may be disposed above themicroLEDs 22 and thelight blocking layer 23A. - The (first)
light blocking layer 23A of the embodiment may include black matrix (BM). In the embodiment shown inFIG. 15B , black resin is first formed, followed by adopting photo process and curing process to form the BM (first)light blocking layer 23A. In another embodiment, ink-jet printing technique and curing process are adopted to form the BM (first)light blocking layer 23A. - The (first)
light blocking layer 23A definesemission areas 24, which are not covered with the (first)light blocking layer 23A. In other words, areas other than theemission areas 24 are covered with the (first)light blocking layer 23A. Alight guiding layer 25, composed of light guiding material, is disposed in theemission areas 24 to spread the light emitted by themicroLEDs 22. The light guiding material is transparent with high refractive index. In the embodiment, thelight guiding layer 25 is entirely formed in theemission areas 24. - In the embodiment, the (first)
light blocking layer 23A has a thickness greater than thelight guiding layer 25. Further, thelight guiding layer 25 has a thickness greater than themicroLEDs 22 as shown inFIG. 15B . In another embodiment, however, thelight guiding layer 25 has a thickness less than or equal to themicroLEDs 22. -
FIG. 15C shows a cross-sectional view of a bottomemission microLED display 1500 according to a modified sixth embodiment of the present invention. In the embodiment shown inFIG. 15C , the (first)light blocking layer 23A has a thickness less than thelight guiding layer 25. Moreover, the (first)light blocking layer 23A and thelight guiding layer 25 partially overlap each other, and the (first)light blocking layer 23A is partially covered with thelight guiding layer 25. In the embodiment shown inFIG. 15C , a chromium/chromium oxide film is first formed, followed by adopting photo etching technique to form the BM (first)light blocking layer 23A. -
FIG. 15D shows another top view of the bottomemission microLED display 1500 according to the sixth embodiment of the present invention. A connectingstructure 26, such as conductive electrode, is disposed between the microLEDs 22 and themain substrate 21A in eachemission area 24. The connectingstructure 26 may include transparent material (e.g., indium tin oxide), opaque material (e.g., metal) or reflective material. According to one aspect of the embodiment, the connectingstructures 26 in theemission areas 24 have the same pattern, which can prevent nonuniform display issue. -
FIG. 16A shows a top view of a bottomemission microLED display 1600 according to a seventh embodiment of the present invention, andFIG. 16B shows a cross-sectional view ofFIG. 16A . The seventh embodiment is similar to the sixth embodiment with the exception that, in the seventh embodiment, the (first)light blocking layer 23A is disposed between adjacent pixels (instead of adjacent microLEDs 22) to prevent interference (e.g., color mixing) between adjacent pixels and to enhance contrast. - The (first)
light blocking layer 23A definesemission areas 24, which are not covered with the (first)light blocking layer 23A. In other words, areas other than theemission areas 24 are covered with the (first)light blocking layer 23A. In the embodiment, thelight guiding layer 25 is entirely formed in theemission areas 24. - In the embodiment, the (first)
light blocking layer 23A has a thickness greater than thelight guiding layer 25. Further, thelight guiding layer 25 has a thickness greater than themicroLEDs 22 as shown inFIG. 16B . In another embodiment, however, thelight guiding layer 25 has a thickness less than or equal to themicroLEDs 22. -
FIG. 16C shows a cross-sectional view of a bottomemission microLED display 1600 according to a modified seventh embodiment of the present invention. In the embodiment shown inFIG. 16C , the (first)light blocking layer 23A has a thickness less than thelight guiding layer 25. Moreover, the (first)light blocking layer 23A and thelight guiding layer 25 partially overlap each other, and the (first)light blocking layer 23A is partially covered with thelight guiding layer 25. -
FIG. 16D shows another top view of the bottomemission microLED display 1600 according to the seventh embodiment of the present invention. A connectingstructure 26, such as conductive electrode, is disposed on a top surface of themicroLED 22 in eachemission area 24. According to one aspect of the embodiment, the connectingstructures 26 in theemission areas 24 have the same pattern and the connectingstructures 26 in eachemission area 24 have the same pattern, which can prevent nonuniform display issue. -
FIG. 17A shows a top view of a bottomemission microLED display 1700 according to an eighth embodiment of the present invention, andFIG. 17B shows a cross-sectional view ofFIG. 17A . In the embodiment, microLEDs 22 (e.g.,red microLED 22R,green microLED 22G andblue microLED 22B) may be disposed above a (first)main substrate 21A. EachmicroLED 22 corresponds to anemission area 24. In the embodiment, a frame-shaped firstlight blocking layer 23A surrounds theemission area 24 and is disposed above the (first)main substrate 21A. In the embodiment, a blockingsubstrate 27 is disposed below the (first)main substrate 21A. A secondlight blocking layer 23B, which covers areas other than theemission areas 24 and the firstlight blocking layer 23A, is disposed on a top surface of the blockingsubstrate 27. The firstlight blocking layer 23A and the secondlight blocking layer 23B partially overlap each other. Accordingly, an aperture d1 of the firstlight blocking layer 23A is different from (e.g., smaller than) an aperture d2 of the secondlight blocking layer 23B. In another embodiment, the aperture of the firstlight blocking layer 23A is greater than the aperture of the secondlight blocking layer 23B. In the embodiment, the firstlight blocking layer 23A and the secondlight blocking layer 23B may include BM, and the blockingsubstrate 27 may include transparent material such as quartz, glass or plastic material. - A
light guiding layer 25, composed of light guiding material, is disposed in theemission areas 24 to spread the light emitted by themicroLEDs 22. In the embodiment, thelight guiding layer 25 is entirely formed in theemission areas 24. - In the embodiment, the first
light blocking layer 23A has a thickness greater than thelight guiding layer 25. Further, thelight guiding layer 25 has a thickness greater than themicroLEDs 22 as shown inFIG. 17B . In another embodiment, however, thelight guiding layer 25 has a thickness less than or equal to themicroLEDs 22. -
FIG. 17C shows a cross-sectional view of a bottomemission microLED display 1700 according to a modified eighth embodiment of the present invention. In the embodiment shown inFIG. 17C , the firstlight blocking layer 23A has a thickness less than thelight guiding layer 25. Moreover, the firstlight blocking layer 23A is partially covered with thelight guiding layer 25. - According to one aspect of the embodiment, the connecting structures 26 (not shown) in each
emission area 24 have the same pattern, which can prevent nonuniform display issue. -
FIG. 18A shows a top view of a bottomemission microLED display 1800 according to a ninth embodiment of the present invention, andFIG. 18B shows a cross-sectional view ofFIG. 18A . The ninth embodiment is similar to the eighth embodiment with the exception that, in the ninth embodiment, the firstlight blocking layer 23A and the secondlight blocking layer 23B are disposed between adjacent pixels (instead of adjacent microLEDs 22) to prevent interference (e.g., color mixing) between adjacent pixels and to enhance contrast. - In the embodiment, each pixel (which includes
red microLED 22R,green microLED 22G andblue microLED 22B) corresponds to anemission area 24. In the embodiment, a frame-shaped firstlight blocking layer 23A surrounds theemission area 24 and is disposed above the (first)main substrate 21A. In the embodiment, a secondlight blocking layer 23B, which covers areas other than theemission areas 24 and the firstlight blocking layer 23A, is disposed on a top surface of the blockingsubstrate 27. The firstlight blocking layer 23A and the secondlight blocking layer 23B partially overlap each other. Accordingly, an aperture d1 of the firstlight blocking layer 23A is different from (e.g., smaller than) an aperture d2 of the secondlight blocking layer 23B. In the embodiment, the firstlight blocking layer 23A and the secondlight blocking layer 23B may include BM, and the blockingsubstrate 27 may include transparent material such as quartz, glass or plastic material. - A
light guiding layer 25, composed of light guiding material, is disposed in theemission areas 24 to spread the light emitted by themicroLEDs 22. In the embodiment, thelight guiding layer 25 is entirely formed in theemission areas 24. - In the embodiment, the first
light blocking layer 23A has a thickness greater than thelight guiding layer 25. Further, thelight guiding layer 25 has a thickness greater than themicroLEDs 22 as shown inFIG. 18B . In another embodiment, however, thelight guiding layer 25 has a thickness less than or equal to themicroLEDs 22. -
FIG. 18C shows a cross-sectional view of a bottomemission microLED display 1800 according to a modified ninth embodiment of the present invention. In the embodiment shown inFIG. 18C , the firstlight blocking layer 23A has a thickness less than thelight guiding layer 25. Moreover, the firstlight blocking layer 23A is partially covered with thelight guiding layer 25. - According to one aspect of the embodiment, the connecting structures 26 (not shown) in the
emission areas 24 have the same pattern and the connectingstructures 26 in eachemission area 24 have the same pattern, which can prevent nonuniform display issue. -
FIG. 19 shows a cross-sectional view of a bottomemission microLED display 1900 according to a tenth embodiment of the present invention. In the embodiment, the bottomemission microLED display 1900 may include a firstmain substrate 21A and a secondmain substrate 21B, which are disposed at a same level but correspond to distinct microLED displays, respectively. A firstlight blocking layer 23A is disposed above the firstmain substrate 21A and the secondmain substrate 21B. Similar to the ninth embodiment, the bottomemission microLED display 1900 may include a secondlight blocking layer 23B, which covers areas other than theemission areas 24 and the firstlight blocking layer 23A, being disposed on a top surface of the blockingsubstrate 27. As shown inFIG. 19 , the firstmain substrate 21A and the secondmain substrate 21B correspond to thesame blocking substrate 27, and the firstlight blocking layer 23A of the firstmain substrate 21A and the secondlight blocking layer 23B of the secondmain substrate 21B correspond to the same secondlight blocking layer 23B at a joint of the firstmain substrate 21A and the secondmain substrate 21B. Accordingly, multiple microLED displays may be joined to become a seamless bottomemission microLED display 1900. -
FIG. 20A toFIG. 26B show top views and cross-sectional views illustrating steps of forming a bottom emission microLED display according to one embodiment of the present invention. As shown inFIG. 20A andFIG. 20B , a (first)main substrate 21A, which defines anemission area 24, is provided. As shown inFIG. 21A andFIG. 21B , connectingstructures 26 are formed to connect themicroLED 22. The connectingstructures 26 have the same pattern and the connectingstructures 26 in eachemission area 24 have the same pattern, which can prevent nonuniform display issue. - As shown in
FIG. 22A andFIG. 22B , microLEDs 12 (e.g.,red microLED 12R,green microLED 12G andblue microLED 12B) are disposed on a top surface of the bottomcommon electrode layer 28 by a bonding technique. As shown inFIG. 23A andFIG. 23B , a (first)light blocking layer 23A is disposed in an area other than theemission area 24 to prevent interference (e.g., color mixing) between adjacent pixels and to enhance contrast. - As shown in
FIG. 24A andFIG. 24B , alight guiding layer 25 is disposed in theemission areas 24 to spread the light emitted by themicroLEDs 22. In the embodiment, thelight guiding layer 25 is entirely formed in theemission areas 24. Thelight guiding layer 25 has a thickness greater than themicroLEDs 22 as shown inFIG. 24B . In another embodiment, however, thelight guiding layer 25 has a thickness less than or equal to themicroLEDs 22. It is noted that the order of forming the (first)light blocking layer 23A (FIG. 23A andFIG. 23B ) and forming the light guiding layer 25 (FIG. 24A andFIG. 24B ) may be exchanged. - As shown in
FIG. 25A andFIG. 25B , contact holes are formed above themicroLEDs 22. Next, as shown inFIG. 26A andFIG. 26B , a topcommon electrode layer 28 is formed above thelight guiding layer 25. According to one aspect of the embodiment, the topcommon electrode layer 28 entirely covers theemission area 24 to prevent nonuniform display issue. -
FIG. 27 shows a cross-sectional view of a bottomemission microLED display 2000 according to an eleventh embodiment of the present invention. Compared toFIG. 19 , the bottomemission microLED display 2000 of the present embodiment may include at least oneshielding layer 30 for blocking electromagnetic interference (EMI). In one embodiment, theshielding layer 30 may include transparent conductive material such as transparent conductive oxide (e.g., indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum doped Zinc Oxide (AZO)). - The
shielding layer 30 may be disposed between a top surface of the firstmain substrate 21A and firstlight blocking layer 23A. Theshielding layer 30 may be electrically insulated from the topcommon electrode layer 28 by an insulating layer 29, and may be electrically insulated from the connectingstructure 26 by an insulatinglayer 31. Similarly, theshielding layer 30 may be disposed between a top surface of the secondmain substrate 21B and firstlight blocking layer 23A. Theshielding layer 30 may be electrically insulated from the topcommon electrode layer 28 by an insulating layer 29, and may be electrically insulated from the connectingstructure 26 by an insulatinglayer 31. Theshielding layer 30 may be disposed between a top surface of the blockingsubstrate 27 and the secondlight blocking layer 23B. Generally speaking, theshielding layer 30 may be disposed in one or more areas mentioned above. - The
shielding layer 30 may be adaptable to a top emission microLED display.FIG. 28 shows a cross-sectional view of a topemission microLED display 2100 according to a twelfth embodiment of the present invention. Compared toFIG. 6 , the topemission microLED display 2100 of the present embodiment may include at least oneshielding layer 30 for blocking electromagnetic interference (EMI). In one embodiment, theshielding layer 30 may include transparent conductive material such as transparent conductive oxide (e.g., indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum doped Zinc Oxide (AZO)). In the embodiment, theshielding layer 30 may be disposed between a bottom surface of the blockingsubstrate 27 and the secondlight blocking layer 23B. -
FIG. 29 shows a cross-sectional view of a bottomemission microLED display 2900 according to a thirteenth embodiment of the present invention. Compared toFIG. 15B , the bottomemission microLED display 2900 of the present embodiment may include ananti-floodlight layer 32 disposed on a bottom surface of the firstmain substrate 21A and betweenadjacent microLEDs 22. In other words, theanti-floodlight layer 32 may be disposed on the firstmain substrate 21A opposite the (first)light blocking layer 23A.FIG. 30 shows a cross-sectional view of a bottomemission microLED display 2900 according to a modified thirteenth embodiment of the present invention. Compared toFIG. 15C , the bottomemission microLED display 2900 of the present embodiment may include ananti-floodlight layer 32 disposed on a bottom surface of the firstmain substrate 21A and betweenadjacent microLEDs 22. In other words, theanti-floodlight layer 32 may be disposed on the firstmain substrate 21A opposite the (first)light blocking layer 23A. - After the light emitted by the
microLEDs 22 enters the firstmain substrate 21A, some of the generated light passes through the firstmain substrate 21A, while other of the generated light laterally diffuses in the firstmain substrate 21A due to total reflection, which may interfere withadjacent microLED 22 or pixel to result in floodlight issue. Theanti-floodlight layer 32 of the embodiment may absorb lateral diffused light and effectively avoid floodlight issue. - The
anti-floodlight layer 32 of the embodiment may include BM. In one example, a chromium/chromium oxide film is first formed, followed by adopting photo etching technique to form theBM anti-floodlight layer 32. In another example, black resin is first formed, followed by adopting photo process and curing process to form theBM anti-floodlight layer 32. In a further example, ink-jet printing technique and curing process are adopted to form theBM anti-floodlight layer 32. Theanti-floodlight layer 32 may be directly formed on the firstmain substrate 21A, or may be first formed on another substrate, which is then attached on the firstmain substrate 21A. - As discussed above, the
anti-floodlight layer 32 may be disposed betweenadjacent microLEDs 22. However, theanti-floodlight layer 32 may be disposed between adjacent pixels.FIG. 31 shows a cross-sectional view of a bottomemission microLED display 3100 according to a fourteenth embodiment of the present invention. Compared to the seventh embodiment shown inFIG. 16B , the bottomemission microLED display 3100 of the present embodiment may include ananti-floodlight layer 32 disposed on a bottom surface of the firstmain substrate 21A and between adjacent pixels. In other words, theanti-floodlight layer 32 may be disposed on the firstmain substrate 21A opposite the (first)light blocking layer 23A.FIG. 32 shows a cross-sectional view of a bottomemission microLED display 3100 according to a modified fourteenth embodiment of the present invention. Compared to the modified seventh embodiment shown inFIG. 16C , the bottomemission microLED display 3100 of the present embodiment may include ananti-floodlight layer 32 disposed on a bottom surface of the firstmain substrate 21A and between adjacent pixels. In other words, theanti-floodlight layer 32 may be disposed on the firstmain substrate 21A opposite the (first)light blocking layer 23A. - Although specific embodiments have been illustrated and described, it will be appreciated by those skilled in the art that various modifications may be made without departing from the scope of the present invention, which is intended to be limited solely by the appended claims.
Claims (22)
1. A method of forming a top emission microLED display, comprising:
providing a first main substrate;
forming a plurality of microLEDs above the first main substrate;
forming a first light blocking layer above the first main substrate to define a plurality of emission areas;
forming a light guiding layer in the emission areas; and
forming a plurality of connecting structures disposed in the emission areas respectively and electrically connected with the microLEDs.
2. The method of claim 1 , wherein the connecting structures have a same pattern.
3. The method of claim 1 , wherein the connecting structures comprise transparent material.
4. The method of claim 1 , wherein the connecting structures comprise opaque material.
5. The method of claim 1 , before forming the microLEDs, further comprising a step of entirely forming a conductive layer in the emission areas of the first main substrate.
6. The method of claim 1 , before forming the connecting structures, further comprising a step of forming contact holes above the microLEDs.
7. The method of claim 1 , wherein the first light blocking layer comprises black matrix.
8. The method of claim 1 , wherein a red microLED, a green microLED and a blue microLED in the emission area respectively correspond to the connecting structures with a same pattern.
9. The method of claim 1 , wherein the step of forming the first light blocking layer comprises:
forming black resin; and
treating the black resin by photo process and curing process to form the first light blocking layer with black matrix.
10. The method of claim 1 , wherein the step of forming the first light blocking layer comprises:
using ink-jet printing technique and curing process to form the first light blocking layer with black matrix.
11. The method of claim 1 , wherein the step of forming the first light blocking layer comprises:
forming a chromium/chromium oxide film; and
treating the chromium/chromium oxide film by photo etching technique to form the first light blocking layer with black matrix.
12. A method of forming a bottom emission microLED display, comprising:
providing a first main substrate;
forming a plurality of connecting structures in a plurality of emission areas;
forming a plurality of microLEDs above the connecting structures;
forming a first light blocking layer above the first main substrate to define the emission areas covering the connecting structures; and
forming a light guiding layer in the emission areas.
13. The method of claim 12 , wherein the connecting structures have a same pattern.
14. The method of claim 12 , wherein the connecting structures comprise transparent material.
15. The method of claim 12 , wherein the connecting structures comprise opaque material.
16. The method of claim 12 , after forming the light guiding layer or the first light blocking layer, further comprising a step of entirely forming a conductive layer in the emission areas of the first main substrate.
17. The method of claim 16 , before forming the conductive layer, further comprising a step of forming contact holes above the microLEDs.
18. The method of claim 12 , wherein the first light blocking layer comprises black matrix.
19. The method of claim 12 , wherein a red microLED, a green microLED and a blue microLED in the emission area respectively correspond to the connecting structures with a same pattern.
20. The method of claim 12 , wherein the step of forming the first light blocking layer comprises:
forming black resin; and
treating the black resin by photo process and curing process to form the first light blocking layer with black matrix.
21. The method of claim 12 , wherein the step of forming the first light blocking layer comprises:
using ink-jet printing technique and curing process to form the first light blocking layer with black matrix.
22. The method of claim 12 , wherein the step of forming the first light blocking layer comprises:
forming a chromium/chromium oxide film; and
treating the chromium/chromium oxide film by photo etching technique to form the first light blocking layer with black matrix.
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US20210066554A1 (en) * | 2019-09-03 | 2021-03-04 | Stmicroelectronics (Grenoble 2) Sas | Electronic device comprising optical electronic components and fabricating process |
US11502227B2 (en) * | 2019-09-03 | 2022-11-15 | Stmicroelectronics (Grenoble 2) Sas | Electronic device comprising optical electronic components and fabricating process |
US20230034445A1 (en) * | 2019-09-03 | 2023-02-02 | Stmicroelectronics (Grenoble 2) Sas | Electronic device comprising optical electronic components and fabricating process |
US11935992B2 (en) * | 2019-09-03 | 2024-03-19 | Stmicroelectronics (Grenoble 2) Sas | Electronic device comprising optical electronic components and fabricating process |
Also Published As
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US20200083280A1 (en) | 2020-03-12 |
US11552127B2 (en) | 2023-01-10 |
US20200135801A1 (en) | 2020-04-30 |
US11011574B2 (en) | 2021-05-18 |
US20210242276A1 (en) | 2021-08-05 |
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