US20200028324A1 - Optical apparatus, manufacturing method of distributed bragg reflector laser diode and manufacturing method of optical apparatus - Google Patents
Optical apparatus, manufacturing method of distributed bragg reflector laser diode and manufacturing method of optical apparatus Download PDFInfo
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- US20200028324A1 US20200028324A1 US16/585,035 US201916585035A US2020028324A1 US 20200028324 A1 US20200028324 A1 US 20200028324A1 US 201916585035 A US201916585035 A US 201916585035A US 2020028324 A1 US2020028324 A1 US 2020028324A1
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H01S5/00—Semiconductor lasers
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- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
Definitions
- the present disclosure herein relates to an optical apparatus and a manufacturing method thereof, and more particularly, to an optical apparatus including a distributed Bragg reflector laser diode and a manufacturing method thereof.
- a typical distributed Bragg reflector (DBR) laser diode may be a longitudinal single-mode light source and a wavelength tunable laser.
- the typical DBR laser diode may include a gain section and a DBR section.
- the gain section and the DBR section may be monolithically integrated in a waveguide type in a semiconductor substrate.
- An exemplary embodiment provides a manufacturing method of a distributed Bragg reflector laser diode in which a recess region may be easily provided.
- An exemplary embodiment also provides a manufacturing method of an optical apparatus capable of minimizing a heating and cooling interference.
- An embodiment of the inventive concept provides an optical apparatus including: a cooling device; a distributed Bragg reflector laser diode having a lower clad including a recess region on one side of the cooling device and connected to another side of the cooling device; and an air gap between the cooling device and the distributed Bragg reflector laser diode.
- the air gap is defined by a bottom surface of the lower clad in the recess region and a top surface of the cooling device.
- the distributed Bragg reflector laser diode may include: a waveguide including a passive waveguide on one side of the lower clad and an active waveguide on another end of the lower clad; an upper clad on the waveguide; a first upper electrode on the upper clad of the active waveguide; and a second upper electrode on the upper clad of the passive waveguide.
- the recess region may be disposed below the second upper electrode.
- the distributed Bragg reflector laser diode may further include gratings disposed in the lower clad below the second upper electrode.
- the gratings may be disposed in a depth equal to or greater than 5 ⁇ m from the bottom surface of the lower clad in the recess region.
- the optical apparatus may further include bumps between the lower clad and the other side of the cooling device.
- the cooling device may include a thermocouple; and a metal optical bench between the thermocouple and the bumps.
- the optical apparatus may further include bumps between the lower clad and the other side of the cooling device.
- the cooling device may include a thermocouple; a mount block between the thermocouple and the bumps; and a metal pattern formed between the mount block and the bumps the metal pattern grounded.
- a manufacturing method of a distributed Bragg reflector laser diode includes: forming gratings in a lower clad; forming a waveguide including a passive waveguide on the gratings and an active waveguide connected to the passive waveguide; forming an upper clad on the waveguide; forming a plurality of upper electrodes on the upper clad; forming a lower electrode layer below the lower clad; and etching a part of the lower electrode layer below the gratings and a part of the lower clad to form a lower electrode and a recess region.
- the lower clad when a thickness of the lower clad is 100 ⁇ m, the lower clad may be etched to 80 ⁇ m or thinner, and the gratings may be formed in a depth equal to or greater than 5 ⁇ m from a bottom surface of the lower clad in the recess region.
- the manufacturing method may further include: forming an insulation layer between one of upper electrodes and the upper clad, wherein when the insulation layer has a thickness of 100 nm, the recess region is formed in a depth of 45 ⁇ m.
- the lower clad may be etched to have a thickness equal to or greater than 3 ⁇ m between a bottom surface of the gratings and a bottom surface of the lower clad in the recess region.
- the recess region may include trenches formed in a line shape.
- the recess region may include holes arranged in a honeycomb shape.
- the upper electrodes may include: a first upper electrode on the active waveguide; a second upper electrode adjacent to the first upper electrode and formed on the passive waveguide; and a third upper electrode adjacent to the second upper electrode and formed on the passive waveguide, wherein the third upper electrode is used as a heater electrode configured to heat the passive waveguide.
- the manufacturing method of claim may further include: forming first and second Ohmic contact layers between the upper clad and the first and second electrodes.
- the manufacturing method may further include: providing first to third pads on the first to third upper electrodes, wherein the first and second Ohmic contact layers, the first and second upper layers, and the first and second pads are provided in a laminated structure of titanium/platinum/gold.
- the third upper layer and the third pad may respectively include chromium and gold.
- a manufacturing method of an optical apparatus includes: forming a distributed Bragg reflector laser diode; forming bumps below the distributed Bragg reflector laser diode; bonding a cooling device to the bumps, wherein a manufacturing method of the distributed Bragg reflector laser diode includes: forming gratings in a lower clad; forming a waveguide including a passive waveguide on the gratings and an active waveguide connected to the passive waveguide; forming an upper clad on the waveguide; forming a plurality of upper electrodes on the upper clad; forming a lower electrode layer below the lower clad; and etching a part of the lower electrode layer below the gratings and a part of the lower clad to provide a lower electrode and a recess region.
- the lower clad below the passive waveguide and the cooling device may form an air gap, wherein the air gap may be formed larger than a depth of a bottom surface of the lower clad in the recess region.
- the cooling device may include: a thermocouple; and a metal optical bench between the thermocouple and the bumps.
- the cooling device may include: a thermocouple
- thermocouple between the thermocouple and the bumps; and a metal pattern formed and earthed between the mount block and the bumps.
- the mount block may include ceramic.
- FIG. 1 is a flowchart showing a manufacturing method of an optical apparatus according to an embodiment of the inventive concept
- FIGS. 2 to 11 are process cross-sectional views showing an example of a step in which the distributed Bragg reflector (DBR) laser diode of FIG. 1 is formed;
- DBR distributed Bragg reflector
- FIG. 12 is a plan view of first to third upper electrodes of FIG. 7 ;
- FIG. 13 is a plan view showing a lower electrode and a lower clad in a recess region of FIG. 9 ;
- FIG. 14 is a graph showing the thickness of an insulation layer and the depth of the recess region according to thermal efficiencies of an upper clad and the lower clad of FIG. 9 ;
- FIGS. 15 and 16 are respectively a cross-sectional view and a plan view showing an example of the recess region of FIG. 9 ;
- FIG. 17 is a plan view showing an example of the recess regions of FIG. 15 ;
- FIG. 18 is a plan view showing an example of a cooling device of FIG. 11 .
- FIG. 1 is a flowchart showing a manufacturing method of an optical apparatus according to an embodiment of the inventive concept.
- a manufacturing method of an optical apparatus may include a step S 100 of providing a distributed Bragg reflector (DBR) laser diode, a step S 110 of forming bumps, and a step S 120 of bonding a cooling device.
- DBR distributed Bragg reflector
- the step S 100 of forming the DBR may include a step S 10 of forming gratings in a lower clad, a step S 20 of forming a waveguide, a step S 30 of forming an upper clad, a step S 40 of forming an insulation layer, a step S 50 of forming an Ohmic contact layer, a step S 60 of forming first to third upper electrodes, a step S 70 of forming a lower electrode, and a step S 80 of etching a part of the lower electrode and a part of the lower clad.
- FIGS. 2 to 11 are process cross-sectional views showing an example of the step S 100 of forming the distributed Bragg reflector (DBR) laser diode of FIG. 1 .
- DBR distributed Bragg reflector
- the gratings 20 are formed in the lower clad 10 (step S 10 ).
- the lower clad 10 may include III-V compound semiconductor or II-VI compound semiconductor.
- the lower clad 10 may include N-type InP.
- the gratings 20 may include Bragg gratings.
- the waveguide 20 is formed on the lower clad 10 (step S 20 ).
- the waveguide 20 may include intrinsic InGaAsP or InGaAs.
- the waveguide 30 may have the thickness of about 0.35 ⁇ m.
- the waveguide 30 may include an active waveguide 32 and a passive waveguide 34 .
- the active waveguide 32 may have a multiple quantum well (MQW) structure.
- the active waveguide 32 may provide the gain of a laser light 101 .
- the active waveguide 32 may have a gain medium (not shown).
- the gain medium may include InGaAs or InGaAsP.
- the passive waveguide 34 may be formed on the gratings 20 .
- the gratings 20 may reflect and/or generate the laser light 101 .
- the active waveguide 32 may generate a light of a wide spectrum band and the gratings may reflect the light of a specific wavelength to generate an oscillation light.
- the waveguide 32 and the gratings 20 may function as a resonator.
- the upper clad 40 is formed on the waveguide 30 and a current blocking layer 12 (step S 30 ).
- the upper clad 40 may include P-type InP.
- the insulation layer 50 may be formed on the upper clad 40 .
- the insulation layer 50 may be formed by a deposition process, a photolithography process and an etching process. According to an example, the insulation layer 50 may be formed on a passive waveguide 34 .
- the insulation layer 50 may include a dielectric material.
- the insulation layer 50 may include a silicon oxide or a silicon nitride.
- the insulation layer 50 may have the thickness of about 100 nm to about 200 nm.
- first and second Ohmic contact layers 62 and 64 on the upper clad 40 exposed from the insulation layer 50 may be formed on the upper clad 40 of the active waveguide 32 and the passive waveguide 40 .
- the first and second Ohm contact layers 62 and 64 may be formed on the upper clad 40 outskirts of the gratings 20 .
- the first and second Ohmic contact layers 62 and 64 may include P-type GaAs or InGaAs.
- FIG. 12 is a plan view of first to third upper electrodes 72 , 74 and 76 of FIG. 7 .
- the first to third upper electrodes 72 , 74 and 76 are formed on the first and second Ohmic contact layers 62 and 64 and the insulation layer 50 (step S 60 ).
- Each of the first to third upper electrodes 72 , 74 and 76 may be formed through a metal disposition process, a photolithography process and an etching process.
- the first and second upper electrodes 72 and 74 may be formed on the first and second Ohmic contact layers 62 and 64 .
- the first and second upper electrodes 72 and 74 may include at least one of gold, silver, aluminum, platinum, tungsten, titanium, tantalum, molybdenum, indium, nickel, chromium, or manganese.
- the first and second upper electrodes 72 and 74 may be first and second current injection electrodes.
- a first current is provided to the first upper electrode 72 , the active waveguide 32 may generate the laser light 101 .
- the first upper electrode 72 and/or the active waveguide 32 may define a gain section 102 .
- the laser light 101 may travel along the passive waveguide 34 .
- Wavelength tunable characteristics of the laser light 101 may be obtained by jumping an interval corresponding to a free spectral range (FSR) of a resonator according to first and second currents and thermal heating.
- the laser light 101 may have an oscillation wavelength of a wavelength located between the FSR intervals or may be obtained in a single mode with a high side-mode suppression ratio (SMSR) equal to or greater than about 30 dB near a selected wavelength.
- SMSR side-mode suppression ratio
- the single mode with the high SMSR may be obtained by adjusting a cavity mode induced through current injection or thermal heating in a phase section 104 .
- the lower clad 10 may be grounded by the lower electrode 92 (see FIG. 9 ).
- the cavity mode of the laser light 101 in the passive waveguide 34 may be adjusted.
- the cavity mode of the laser light 101 may be adjusted by heating the second upper electrode 74 .
- the second upper electrode 74 may define the phase section 104 .
- the third upper electrode 76 may be formed on the insulation layer 50 .
- the third upper electrode 76 may be disposed on the gratings 20 .
- the third upper electrodes 76 may be heater electrodes.
- the third upper electrode 76 may include a nickel-chromium alloy.
- the third upper electrode 76 may heat the upper clad 40 , the passive waveguide 34 , the lower clad 10 and the gratings 20 of the wavelength tunable section. Refractive indexes of the heated upper clad 40 , passive waveguide 34 , lower clad 10 and gratings 20 may vary.
- the refractive indexes thereof may increase.
- the wavelength of the laser light 101 may be changed in correspondence to a Bragg condition change of the gratings 20 .
- the wavelength of the laser light 101 may increase.
- a temperature of the third upper electrode 76 may be proportional to the wavelength of the laser light 101 .
- the third upper electrode 76 may define the wavelength tunable section 106 .
- the DBR laser diode 100 may include the gain section 102 , the phase section 104 , and the wavelength tunable section 106 .
- first to third pads 82 , 84 and 86 may be formed on the first to third upper electrodes 72 , 74 and 76 .
- the first to third pads 82 , 84 and 86 may include a metal identical to that of the first to third upper electrodes 72 , 74 and 76 .
- the first and second Ohmic contact layers 62 and 64 , the first and second upper electrodes 72 and 74 , and the first and second pads 82 and 74 may have a laminated structure of Ti/Pt/Au.
- the third upper electrode 76 and the third pad 86 may have a laminated structure of Cr/Au.
- a lower electrode layer 90 is provided under the lower clad 10 (step S 70 ).
- the lower electrode layer 90 may be formed by a metal deposition process.
- the lower electrode layer 90 may be formed on and/or under a front surface of the lower clad 10 .
- the lower electrode layer 90 may include a metal having the thickness of about 100 ⁇ m to about 200 ⁇ m.
- a part of the lower electrode layer 90 and a part of the lower clad 10 are etched to provide a lower electrode 92 and a recess region 108 (step S 80 ).
- the lower electrode 92 may be formed under the lower clad 10 of the gain section 102 .
- the recess region 108 may be formed in the phase section 104 and the wavelength tunable section 106 by etching the lower clad 10 .
- the recess region 108 may be formed by a photolithography process and an etching process.
- the recess region 108 may be formed in the lower clad 10 under the passive waveguide 34 .
- the lower electrode 92 may be formed by a wrapping process and/or a liftoff process.
- FIG. 13 shows the lower electrode 92 and the lower clad 10 inside the recess region 108 of FIG. 9 .
- the lower electrode 92 may formed adjacent to the recess region 108 .
- the recess region 108 may expose, to the air, a bottom surface 14 of the lower clad 10 of the phase section 104 and the wavelength tunable section 106 .
- the lower clad 10 inside the recess region 108 may have the thickness of 3 ⁇ m to 5 ⁇ m from the gratings 20 to the bottom surface 14 .
- the gratings 20 may be formed in the depth of 3 ⁇ m to 5 ⁇ m or deeper from the bottom surface 14 of the lower clad. 10 .
- the recess region 108 may be formed in the depth D and/or the height of about 10 ⁇ m to about 80 ⁇ m.
- the depth D of the recess region 108 may be determined such that a thermal efficiency of the upper clad 40 of the third upper electrode 76 is balanced with a thermal isolation efficiency of the lower clad 10 .
- FIG. 14 is a graph showing the thickness T of the insulation layer 50 and the depth D of the recess region 108 according to the thermal efficiencies of the upper clad 40 and the lower clad 10 in FIG. 9 .
- a thermal efficiency of heat transfer or thermal isolation of the upper clad 40 and the lower clad 10 may be 50%.
- the thermal transfer efficiency may be smaller than the thermal isolation efficiency.
- the lower clad 10 having the recess region 108 in the depth smaller than about 45 ⁇ m may be excessively heated in comparison to the insulation layer 50 having the thickness of about 100 ⁇ m.
- the thermal isolation efficiency may be lower than the thermal transfer efficiency.
- the lower clad 10 having the recess region 108 in the depth larger than about 45 ⁇ m may be excessively cooled in comparison to the insulation layer 50 having the thickness of about 100 ⁇ m.
- FIGS. 15 and 16 show examples of the recess region of FIG. 9 .
- recess regions 108 a may include trenches. Each of the recess regions 108 a may be parallel with each other. For example, the recess regions 108 a may have a line shape. When the gain section 102 has the length of about 200 ⁇ m to about 500 ⁇ m and the wavelength tunable section 106 has the length within about 500 ⁇ m, each of the recess regions 108 a may have the width and/or an interval of about 10 ⁇ m to about 100 ⁇ m.
- FIG. 17 shows an example of the recess regions of FIG. 15 .
- the recess regions 108 b may include holes.
- each of the recess regions 108 b may have a radius of several ⁇ m to dozens ⁇ m.
- the recess regions 108 b may be locally formed in the lower clad 10 of the phase section 104 and the wavelength tunable section 106 .
- the recess regions 108 a may be arranged in a honeycomb shape.
- bumps 110 may be provided under the lower electrode 92 (step S 110 ).
- the bumps 110 may be connected to the lower electrode 92 .
- the bumps 110 may include solders.
- a cooling device 120 is attached to the bumps 110 (step S 110 ).
- the cooling device 120 may include a thermo-electric element.
- the cooling device 120 may cool the gain section 102 .
- the cooling device 120 may include a thermocouple 122 and a metal optical bench (MOB) 124 .
- the MOB 124 may be disposed between the bumps 110 and the thermocouple 122 .
- the MOB 124 may include aluminum, tungsten, tantalum, titanium, or stainless steel.
- the thermocouple 122 may cool the MOB 124 , the bumps 110 and the gain section 102 using a Peltier effect.
- a top surface 123 of the MOB 124 and a bottom surface 14 of the lower clad 10 in the phase section 104 and the wavelength tunable section 106 may form an air gap G.
- the air gap G may include the recess region 108 .
- the air gap G may be larger than the depth of the recess region 108 .
- the air gap G may be defined by the bottom surface 14 of the lower clad 10 in the recess region 108 and the top surface 123 of the cooling device 120 .
- the air gap G may thermally separate and/or delink the wavelength tunable section 106 and/or the phase section 104 from the cooling device 120 .
- the air in the air gap G may be used as a heat insulating material of the wavelength tunable section 106 and the cooling device 120 .
- the air in recess region 108 may be used as a heat insulating material of the phase section 104 and the cooling device 120 .
- the recess region 108 may reduce an interference between heating of the wavelength tunable section 106 and cooling of the cooling device 120 .
- FIG. 18 shows an example of the cooling device of FIG. 12 .
- the cooling device 120 a may include a mount block 126 and a metal pattern 128 between the bumps 110 and the thermocouple 122 .
- the mount block 126 may electrically insulate the metal pattern 128 from the thermocouple 122 .
- the mount block 126 may have a lower thermal conductivity than a metal.
- the mount block 126 may thermally separate and/or delink the bumps 110 from the thermocouple 122 .
- the mount block 126 may include a ceramic.
- the metal pattern 128 may be formed between the bumps 110 and the mount block 126 .
- the bumps 110 may be bonded on the metal pattern 128 .
- the metal pattern 128 may be grounded externally. Unlike this, the metal pattern 128 may be connected to an external power source.
- a distributed Bragg reflector laser diode may provide a recess region by etching a part of a lower clad.
- the air in the recess region may function as a heat insulating material of a lower clad in a wavelength tunable section and a cooling device below the lower clad.
- the recess region may reduce an interference between heating of the wavelength tunable section and cooling of the cooling device.
- An exemplary embodimentbond includes not only the above-described embodiments but also simply changed or easily modified embodiments.
- the inventive concept may also include technologies for easily modifying and practicing the above-described embodiments.
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Abstract
Description
- This application is a division of U.S. application Ser. No. 15/702,262, filed on Sep. 12, 2017 (allowed on Jul. 3, 2019). Furthermore, this application claims priority under 35 U.S.C. § 119 of Korean Patent Application No. 10-2017-0006421, filed on Jan. 13, 2017, and the entire disclosures of the prior U.S. and Korean applications are incorporated herein by reference.
- The present disclosure herein relates to an optical apparatus and a manufacturing method thereof, and more particularly, to an optical apparatus including a distributed Bragg reflector laser diode and a manufacturing method thereof.
- A typical distributed Bragg reflector (DBR) laser diode may be a longitudinal single-mode light source and a wavelength tunable laser. The typical DBR laser diode may include a gain section and a DBR section. The gain section and the DBR section may be monolithically integrated in a waveguide type in a semiconductor substrate.
- An exemplary embodiment provides a manufacturing method of a distributed Bragg reflector laser diode in which a recess region may be easily provided.
- An exemplary embodiment also provides a manufacturing method of an optical apparatus capable of minimizing a heating and cooling interference.
- An embodiment of the inventive concept provides an optical apparatus including: a cooling device; a distributed Bragg reflector laser diode having a lower clad including a recess region on one side of the cooling device and connected to another side of the cooling device; and an air gap between the cooling device and the distributed Bragg reflector laser diode. Here, the air gap is defined by a bottom surface of the lower clad in the recess region and a top surface of the cooling device.
- In an embodiment, the distributed Bragg reflector laser diode may include: a waveguide including a passive waveguide on one side of the lower clad and an active waveguide on another end of the lower clad; an upper clad on the waveguide; a first upper electrode on the upper clad of the active waveguide; and a second upper electrode on the upper clad of the passive waveguide. The recess region may be disposed below the second upper electrode.
- In an embodiment, the distributed Bragg reflector laser diode may further include gratings disposed in the lower clad below the second upper electrode. The gratings may be disposed in a depth equal to or greater than 5 μm from the bottom surface of the lower clad in the recess region.
- In an embodiment, the optical apparatus may further include bumps between the lower clad and the other side of the cooling device. The cooling device may include a thermocouple; and a metal optical bench between the thermocouple and the bumps.
- In an embodiment, the optical apparatus may further include bumps between the lower clad and the other side of the cooling device. The cooling device may include a thermocouple; a mount block between the thermocouple and the bumps; and a metal pattern formed between the mount block and the bumps the metal pattern grounded.
- In an embodiment of the inventive concept, a manufacturing method of a distributed Bragg reflector laser diode includes: forming gratings in a lower clad; forming a waveguide including a passive waveguide on the gratings and an active waveguide connected to the passive waveguide; forming an upper clad on the waveguide; forming a plurality of upper electrodes on the upper clad; forming a lower electrode layer below the lower clad; and etching a part of the lower electrode layer below the gratings and a part of the lower clad to form a lower electrode and a recess region.
- In an embodiment, when a thickness of the lower clad is 100 μm, the lower clad may be etched to 80 μm or thinner, and the gratings may be formed in a depth equal to or greater than 5 μm from a bottom surface of the lower clad in the recess region.
- In an embodiment, the manufacturing method may further include: forming an insulation layer between one of upper electrodes and the upper clad, wherein when the insulation layer has a thickness of 100 nm, the recess region is formed in a depth of 45 μm.
- In an embodiment, the lower clad may be etched to have a thickness equal to or greater than 3 μm between a bottom surface of the gratings and a bottom surface of the lower clad in the recess region.
- In an embodiment, the recess region may include trenches formed in a line shape.
- In an embodiment, the recess region may include holes arranged in a honeycomb shape.
- In an embodiment, the upper electrodes may include: a first upper electrode on the active waveguide; a second upper electrode adjacent to the first upper electrode and formed on the passive waveguide; and a third upper electrode adjacent to the second upper electrode and formed on the passive waveguide, wherein the third upper electrode is used as a heater electrode configured to heat the passive waveguide.
- In an embodiment, the manufacturing method of claim may further include: forming first and second Ohmic contact layers between the upper clad and the first and second electrodes.
- In an embodiment, the manufacturing method may further include: providing first to third pads on the first to third upper electrodes, wherein the first and second Ohmic contact layers, the first and second upper layers, and the first and second pads are provided in a laminated structure of titanium/platinum/gold.
- In an embodiment, the third upper layer and the third pad may respectively include chromium and gold.
- In an embodiment of the inventive concept, a manufacturing method of an optical apparatus includes: forming a distributed Bragg reflector laser diode; forming bumps below the distributed Bragg reflector laser diode; bonding a cooling device to the bumps, wherein a manufacturing method of the distributed Bragg reflector laser diode includes: forming gratings in a lower clad; forming a waveguide including a passive waveguide on the gratings and an active waveguide connected to the passive waveguide; forming an upper clad on the waveguide; forming a plurality of upper electrodes on the upper clad; forming a lower electrode layer below the lower clad; and etching a part of the lower electrode layer below the gratings and a part of the lower clad to provide a lower electrode and a recess region.
- In an embodiment, the lower clad below the passive waveguide and the cooling device may form an air gap, wherein the air gap may be formed larger than a depth of a bottom surface of the lower clad in the recess region.
- In an embodiment, the cooling device may include: a thermocouple; and a metal optical bench between the thermocouple and the bumps.
- In an embodiment, the cooling device may include: a thermocouple;
- a mount block between the thermocouple and the bumps; and a metal pattern formed and earthed between the mount block and the bumps.
- In an embodiment, the mount block may include ceramic.
- The accompanying drawings are included to provide a further understanding of the inventive concept, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of the inventive concept and, together with the description, serve to explain principles of the inventive concept. In the drawings:
-
FIG. 1 is a flowchart showing a manufacturing method of an optical apparatus according to an embodiment of the inventive concept; -
FIGS. 2 to 11 are process cross-sectional views showing an example of a step in which the distributed Bragg reflector (DBR) laser diode ofFIG. 1 is formed; -
FIG. 12 is a plan view of first to third upper electrodes ofFIG. 7 ; -
FIG. 13 is a plan view showing a lower electrode and a lower clad in a recess region ofFIG. 9 ; -
FIG. 14 is a graph showing the thickness of an insulation layer and the depth of the recess region according to thermal efficiencies of an upper clad and the lower clad ofFIG. 9 ; -
FIGS. 15 and 16 are respectively a cross-sectional view and a plan view showing an example of the recess region ofFIG. 9 ; -
FIG. 17 is a plan view showing an example of the recess regions ofFIG. 15 ; and -
FIG. 18 is a plan view showing an example of a cooling device ofFIG. 11 . - Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, and methods for achieving the same will be cleared with reference to exemplary embodiments described later in detail together with the accompanying drawings. The inventive concept may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. The present invention is defined by only scopes of the claims. Throughout this specification, like numerals refer to like elements.
- The terms and words used in the following description and claims are to describe embodiments but are not limited the inventive concept. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising” used herein specify the presence of stated components, operations and/or elements but do not preclude the presence or addition of one or more other components, operations and/or elements. In addition, a solder, blocks, powders, a spacer, and a magnetic field may be understood as mainly used meanings. In addition, as just exemplary embodiments, reference numerals shown according to an order of description are not limited to the order.
-
FIG. 1 is a flowchart showing a manufacturing method of an optical apparatus according to an embodiment of the inventive concept. - Referring to
FIG. 1 , a manufacturing method of an optical apparatus may include a step S100 of providing a distributed Bragg reflector (DBR) laser diode, a step S110 of forming bumps, and a step S120 of bonding a cooling device. According to an example, the step S100 of forming the DBR may include a step S10 of forming gratings in a lower clad, a step S20 of forming a waveguide, a step S30 of forming an upper clad, a step S40 of forming an insulation layer, a step S50 of forming an Ohmic contact layer, a step S60 of forming first to third upper electrodes, a step S70 of forming a lower electrode, and a step S80 of etching a part of the lower electrode and a part of the lower clad. -
FIGS. 2 to 11 are process cross-sectional views showing an example of the step S100 of forming the distributed Bragg reflector (DBR) laser diode ofFIG. 1 . - Referring to
FIGS. 1 and 2 , thegratings 20 are formed in the lower clad 10 (step S10). According to an example, the lower clad 10 may include III-V compound semiconductor or II-VI compound semiconductor. The lower clad 10 may include N-type InP. According to an example, thegratings 20 may include Bragg gratings. - Referring to
FIGS. 1 and 3 , thewaveguide 20 is formed on the lower clad 10 (step S20). For example, thewaveguide 20 may include intrinsic InGaAsP or InGaAs. Thewaveguide 30 may have the thickness of about 0.35 μm. According to an example, thewaveguide 30 may include anactive waveguide 32 and apassive waveguide 34. For example, theactive waveguide 32 may have a multiple quantum well (MQW) structure. Theactive waveguide 32 may provide the gain of alaser light 101. Theactive waveguide 32 may have a gain medium (not shown). The gain medium may include InGaAs or InGaAsP. Thepassive waveguide 34 may be formed on thegratings 20. Thegratings 20 may reflect and/or generate thelaser light 101. In other words, theactive waveguide 32 may generate a light of a wide spectrum band and the gratings may reflect the light of a specific wavelength to generate an oscillation light. Thewaveguide 32 and thegratings 20 may function as a resonator. Thegratings 20 may satisfy a Bragg condition mλ=2neqΛ, where m is an order of diffraction of 1, λ, is a wavelength of a light, neq is an effective refractive index of a guiding layer, and Λ is a period of a refractive grating. - Referring to
FIGS. 1 and 4 , the upper clad 40 is formed on thewaveguide 30 and a current blocking layer 12 (step S30). For example, the upper clad 40 may include P-type InP. - Referring to
FIGS. 1 and 5 , theinsulation layer 50 may be formed on the upper clad 40. Theinsulation layer 50 may be formed by a deposition process, a photolithography process and an etching process. According to an example, theinsulation layer 50 may be formed on apassive waveguide 34. Theinsulation layer 50 may include a dielectric material. For example, theinsulation layer 50 may include a silicon oxide or a silicon nitride. Theinsulation layer 50 may have the thickness of about 100 nm to about 200 nm. - Referring to
FIGS. 1 and 6 , first and second Ohmic contact layers 62 and 64 on the upper clad 40 exposed from the insulation layer 50 (step S50). The first and second Ohm contact layers 62 and 64 may be formed on the upper clad 40 of theactive waveguide 32 and thepassive waveguide 40. The first and second Ohm contact layers 62 and 64 may be formed on the upper clad 40 outskirts of thegratings 20. The first and second Ohmic contact layers 62 and 64 may include P-type GaAs or InGaAs. -
FIG. 12 is a plan view of first to thirdupper electrodes FIG. 7 . - Referring to
FIGS. 1, 7, and 12 , the first to thirdupper electrodes upper electrodes - The first and second
upper electrodes upper electrodes upper electrodes upper electrode 72, theactive waveguide 32 may generate thelaser light 101. The firstupper electrode 72 and/or theactive waveguide 32 may define again section 102. - The
laser light 101 may travel along thepassive waveguide 34. Wavelength tunable characteristics of thelaser light 101 may be obtained by jumping an interval corresponding to a free spectral range (FSR) of a resonator according to first and second currents and thermal heating. Thelaser light 101 may have an oscillation wavelength of a wavelength located between the FSR intervals or may be obtained in a single mode with a high side-mode suppression ratio (SMSR) equal to or greater than about 30 dB near a selected wavelength. The single mode with the high SMSR may be obtained by adjusting a cavity mode induced through current injection or thermal heating in aphase section 104. - The lower clad 10 may be grounded by the lower electrode 92 (see
FIG. 9 ). When the second current is provided to the secondupper electrode 74, the cavity mode of thelaser light 101 in thepassive waveguide 34 may be adjusted. The cavity mode of thelaser light 101 may be adjusted by heating the secondupper electrode 74. The secondupper electrode 74 may define thephase section 104. - The third
upper electrode 76 may be formed on theinsulation layer 50. The thirdupper electrode 76 may be disposed on thegratings 20. The thirdupper electrodes 76 may be heater electrodes. For example, the thirdupper electrode 76 may include a nickel-chromium alloy. The thirdupper electrode 76 may heat the upper clad 40, thepassive waveguide 34, the lower clad 10 and thegratings 20 of the wavelength tunable section. Refractive indexes of the heated upper clad 40,passive waveguide 34, lower clad 10 andgratings 20 may vary. For example, when the heated upper clad 40, thepassive waveguide 34, the lower clad 10 and thegratings 20 are heated, the refractive indexes thereof may increase. The wavelength of thelaser light 101 may be changed in correspondence to a Bragg condition change of thegratings 20. According to an embodiment, when the refractive index increases, the wavelength of thelaser light 101 may increase. Accordingly, when a temperature increases, the wavelength of thelaser light 101 may increase. A temperature of the thirdupper electrode 76 may be proportional to the wavelength of thelaser light 101. The thirdupper electrode 76 may define thewavelength tunable section 106. TheDBR laser diode 100 may include thegain section 102, thephase section 104, and thewavelength tunable section 106. - Thereafter, first to
third pads upper electrodes third pads upper electrodes upper electrodes second pads upper electrode 76 and thethird pad 86 may have a laminated structure of Cr/Au. - Referring to
FIGS. 1 and 8 , alower electrode layer 90 is provided under the lower clad 10 (step S70). Thelower electrode layer 90 may be formed by a metal deposition process. Thelower electrode layer 90 may be formed on and/or under a front surface of the lower clad 10. For example, thelower electrode layer 90 may include a metal having the thickness of about 100 μm to about 200 μm. - Referring to
FIGS. 1 and 9 , a part of thelower electrode layer 90 and a part of the lower clad 10 are etched to provide alower electrode 92 and a recess region 108 (step S80). Thelower electrode 92 may be formed under the lower clad 10 of thegain section 102. Therecess region 108 may be formed in thephase section 104 and thewavelength tunable section 106 by etching the lower clad 10. Therecess region 108 may be formed by a photolithography process and an etching process. Therecess region 108 may be formed in the lower clad 10 under thepassive waveguide 34. Although not illustrated, thelower electrode 92 may be formed by a wrapping process and/or a liftoff process. -
FIG. 13 shows thelower electrode 92 and the lower clad 10 inside therecess region 108 ofFIG. 9 . - Referring to
FIGS. 9 and 13 , thelower electrode 92 may formed adjacent to therecess region 108. Therecess region 108 may expose, to the air, abottom surface 14 of the lower clad 10 of thephase section 104 and thewavelength tunable section 106. For example, the lower clad 10 inside therecess region 108 may have the thickness of 3 μm to 5 μm from thegratings 20 to thebottom surface 14. In other words, thegratings 20 may be formed in the depth of 3 μm to 5 μm or deeper from thebottom surface 14 of the lower clad. 10. When the lower clad 10 has the thickness of about 100 μm, therecess region 108 may be formed in the depth D and/or the height of about 10 μm to about 80 μm. The depth D of therecess region 108 may be determined such that a thermal efficiency of the upper clad 40 of the thirdupper electrode 76 is balanced with a thermal isolation efficiency of the lower clad 10. -
FIG. 14 is a graph showing the thickness T of theinsulation layer 50 and the depth D of therecess region 108 according to the thermal efficiencies of the upper clad 40 and the lower clad 10 inFIG. 9 . - Referring to
FIG. 14 , when the thickness of theinsulation layer 50 is about 100 nm and the depth of therecess region 108 is about 45 μm, a thermal efficiency of heat transfer or thermal isolation of the upper clad 40 and the lower clad 10 may be 50%. When the thermal efficiency is lower than 50%, the thermal transfer efficiency may be smaller than the thermal isolation efficiency. The lower clad 10 having therecess region 108 in the depth smaller than about 45 μm may be excessively heated in comparison to theinsulation layer 50 having the thickness of about 100 μm. When the thermal efficiency is higher than 50%, the thermal isolation efficiency may be lower than the thermal transfer efficiency. The lower clad 10 having therecess region 108 in the depth larger than about 45 μm may be excessively cooled in comparison to theinsulation layer 50 having the thickness of about 100 μm. -
FIGS. 15 and 16 show examples of the recess region ofFIG. 9 . - Referring to
FIGS. 15 and 16 ,recess regions 108 a may include trenches. Each of therecess regions 108 a may be parallel with each other. For example, therecess regions 108 a may have a line shape. When thegain section 102 has the length of about 200 μm to about 500 μm and thewavelength tunable section 106 has the length within about 500 μm, each of therecess regions 108 a may have the width and/or an interval of about 10 μm to about 100 μm. -
FIG. 17 shows an example of the recess regions ofFIG. 15 . - Referring to
FIG. 17 , therecess regions 108 b may include holes. For example, each of therecess regions 108 b may have a radius of several μm to dozens μm. Therecess regions 108 b may be locally formed in the lower clad 10 of thephase section 104 and thewavelength tunable section 106. Therecess regions 108 a may be arranged in a honeycomb shape. - Referring to
FIGS. 1 and 10 , bumps 110 may be provided under the lower electrode 92 (step S110). Thebumps 110 may be connected to thelower electrode 92. Thebumps 110 may include solders. - Referring to
FIGS. 1 and 11 , acooling device 120 is attached to the bumps 110 (step S110). Thecooling device 120 may include a thermo-electric element. Thecooling device 120 may cool thegain section 102. Thecooling device 120 may include athermocouple 122 and a metal optical bench (MOB) 124. TheMOB 124 may be disposed between thebumps 110 and thethermocouple 122. TheMOB 124 may include aluminum, tungsten, tantalum, titanium, or stainless steel. Thethermocouple 122 may cool theMOB 124, thebumps 110 and thegain section 102 using a Peltier effect. - According to an example, a
top surface 123 of theMOB 124 and abottom surface 14 of the lower clad 10 in thephase section 104 and thewavelength tunable section 106 may form an air gap G. The air gap G may include therecess region 108. The air gap G may be larger than the depth of therecess region 108. According to an example, the air gap G may be defined by thebottom surface 14 of the lower clad 10 in therecess region 108 and thetop surface 123 of thecooling device 120. The air gap G may thermally separate and/or delink thewavelength tunable section 106 and/or thephase section 104 from thecooling device 120. For example, the air in the air gap G may be used as a heat insulating material of thewavelength tunable section 106 and thecooling device 120. The air inrecess region 108 may be used as a heat insulating material of thephase section 104 and thecooling device 120. Therecess region 108 may reduce an interference between heating of thewavelength tunable section 106 and cooling of thecooling device 120. -
FIG. 18 shows an example of the cooling device ofFIG. 12 . - Referring to
FIG. 18 , thecooling device 120 a may include amount block 126 and ametal pattern 128 between thebumps 110 and thethermocouple 122. Themount block 126 may electrically insulate themetal pattern 128 from thethermocouple 122. Unlike this, themount block 126 may have a lower thermal conductivity than a metal. Themount block 126 may thermally separate and/or delink thebumps 110 from thethermocouple 122. Themount block 126 may include a ceramic. Themetal pattern 128 may be formed between thebumps 110 and themount block 126. Thebumps 110 may be bonded on themetal pattern 128. Themetal pattern 128 may be grounded externally. Unlike this, themetal pattern 128 may be connected to an external power source. - As described above, a distributed Bragg reflector laser diode according to embodiments of the inventive concept may provide a recess region by etching a part of a lower clad. The air in the recess region may function as a heat insulating material of a lower clad in a wavelength tunable section and a cooling device below the lower clad. The recess region may reduce an interference between heating of the wavelength tunable section and cooling of the cooling device.
- The foregoing description is about detailed examples for practicing the inventive concept. An exemplary embodimentbond includes not only the above-described embodiments but also simply changed or easily modified embodiments. In addition, the inventive concept may also include technologies for easily modifying and practicing the above-described embodiments.
- Although the exemplary embodiments of the present invention have been described, it is understood that the present invention should not be limited to these exemplary embodiments but various changes and modifications can be made by one ordinary skilled in the art within the spirit and scope of the present invention as hereinafter claimed.
Claims (5)
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EP3565068B1 (en) * | 2018-04-30 | 2021-02-24 | FRAUNHOFER-GESELLSCHAFT zur Förderung der angewandten Forschung e.V. | Thermally tunable laser and method for fabricating such laser |
WO2020026730A1 (en) * | 2018-07-30 | 2020-02-06 | パナソニック株式会社 | Semiconductor light emitting device and external resonance type laser device |
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US10476232B2 (en) | 2019-11-12 |
US20180205199A1 (en) | 2018-07-19 |
KR102188960B1 (en) | 2020-12-10 |
KR20180084002A (en) | 2018-07-24 |
US10931083B2 (en) | 2021-02-23 |
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