US20190326340A1 - Optoelectronic modules having a silicon substrate, and fabrication methods for such modules - Google Patents
Optoelectronic modules having a silicon substrate, and fabrication methods for such modules Download PDFInfo
- Publication number
- US20190326340A1 US20190326340A1 US16/357,627 US201916357627A US2019326340A1 US 20190326340 A1 US20190326340 A1 US 20190326340A1 US 201916357627 A US201916357627 A US 201916357627A US 2019326340 A1 US2019326340 A1 US 2019326340A1
- Authority
- US
- United States
- Prior art keywords
- spacer
- wafer
- optoelectronic
- modules
- optoelectronic components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 title abstract description 45
- 239000010703 silicon Substances 0.000 title abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 43
- 239000000758 substrate Substances 0.000 title abstract description 39
- 238000004519 manufacturing process Methods 0.000 title description 8
- 125000006850 spacer group Chemical group 0.000 claims abstract description 49
- 230000003287 optical effect Effects 0.000 claims description 34
- 230000000712 assembly Effects 0.000 claims description 16
- 238000000429 assembly Methods 0.000 claims description 16
- 238000012937 correction Methods 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 239000004593 Epoxy Substances 0.000 claims description 5
- 238000003754 machining Methods 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 239000006059 cover glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Definitions
- This disclosure relates to optoelectronic modules having a silicon substrate, and fabrication methods for such modules.
- Smartphones and other devices sometimes include miniaturized optoelectronic modules such as light modules, sensors or cameras.
- Light modules can include a light emitting element such as a light emitting diode (LED), an infra-red (IR) LED, an organic LED (OLED), an infra-red (IR) laser or a vertical cavity surface emitting laser (VCSEL) that emits light through a lens to outside the device.
- Other modules can include a light detecting element.
- CMOS and CCD image sensors can be used in primary or front facing cameras.
- proximity sensors and ambient light sensors can include a light sensing element such as a photodiode.
- the light emitting and light detecting modules as well as cameras can be used in various combinations.
- a light module such as a flash module can be used in combination with a camera that has an imaging sensor.
- Light emitting modules in combination with light detecting modules also can be used for other applications such as gesture recognition or IR illumination.
- This disclosure describes optoelectronic modules having a silicon substrate, and fabrication methods for such modules.
- the module can have as a relatively small footprint.
- the overall cost of the module can be reduced in some cases by eliminating the need for (and cost of) a printed circuit board substrate.
- at least some wiring to the substrate that might otherwise be required can be avoided by using a silicon substrate.
- the thermal conductivity of silicon is relatively high, heat transfer away from the module can be improved.
- using a silicon substrate can help reduce degradation of the module's optical properties when temperatures vary from nominal values.
- an optoelectronic module includes a silicon substrate in which or on which there is an optoelectronic device.
- An optics assembly is disposed over the optoelectronic device.
- a spacer separates the silicon substrate from the optics assembly.
- the spacer preferably is substantially opaque to, or significantly attenuates, light at wavelengths emitted and/or detectable by the optoelectronic device, which may be implemented as a light emitting element formed in, or mounted on, the silicon substrate or as a light detecting element formed in the silicon substrate.
- the spacer laterally surrounds, and is in direct contact with, the silicon substrate and may extend beyond an exterior surface of the silicon substrate.
- Other optical features such as optical filters or focal length correction layers may be provided as well.
- an optoelectronic module in another aspect, includes a first optical channel and a second optical channel.
- a first optoelectronic device in the first optical channel is integrated in or disposed on first silicon substrate, and a second optoelectronic device in the second optical channel is integrated in or disposed on a second silicon substrate.
- First and second optics assemblies are disposed, respectively, over the first and second optoelectronic devices.
- a spacer separates the silicon substrates from the optics assemblies, and a portion of the spacer separates the first and second channels from one another. The spacer laterally surrounds, and is in direct contact with, the first and second silicon substrates.
- the first optics assembly is disposed on the spacer at a first distance from the first substrate, and the second optics assembly is disposed on the spacer at a different second distance from the second substrate. In some cases, the first and second optics assemblies form a laterally contiguous array of optical assemblies.
- a wafer-level method includes applying upper and lower vacuum injection tools to a plurality of optoelectronic devices each of which is integrated in or disposed on a respective silicon substrate.
- the tools define spaces separating the silicon substrates from one another.
- the method further includes injecting a polymer material into the spaces, and curing the polymer material to form a spacer.
- One or more optics assemblies are attached to the spacer so as to obtain a resulting structure in which each of the one or more optics assemblies is disposed over at least one of the optoelectronic devices.
- the resulting structure then is separated into a plurality of optoelectronic modules each of which includes at least one optical channel.
- FIG. 1 is an example of a multi-channel optoelectronic module.
- FIG. 2 is an example of a single channel optoelectronic module.
- FIG. 3 is another example of a multi-channel optoelectronic module.
- FIGS. 4A-4I illustrate steps in a wafer-level method of fabricating optoelectronic modules.
- FIG. 5 is a further example of an optoelectronic module.
- FIGS. 6A and 6B illustrate example of modules having different types of optics assemblies.
- FIGS. 7A and 7B illustrate an example of modules having machine-able spacer features.
- FIG. 8 is an example of an optics assembly that includes focal length correction layers.
- FIGS. 9A and 9B illustrate examples of optoelectronic modules having optical filters.
- a first example of an optoelectronic module 20 includes an array of optical channels.
- the module 20 includes an emission channel 22 and a detection channel 24 .
- the module 20 has silicon substrates 26 A, 26 B, which are separated from an optics assembly 28 by a spacer 30 .
- interior regions of the module 20 are bounded by the substrates 26 A, 26 B, the spacer 30 and the optics assembly 28 .
- each silicon substrate 26 A, 26 B may exhibit different electronic and/or optoelectronic properties.
- a respective active optoelectronic device is integrated in, or disposed on, each silicon substrate 26 A, 26 B.
- a light emitting element 32 e.g., a LED, a laser diode or a series of LEDs or laser diodes
- a single light detecting element e.g., a photodiode
- an array of light detecting elements 34 e.g., pixels of a CMOS sensor
- additional circuit components may be formed in the silicon substrates 26 A, 26 B.
- the spacer 30 laterally surrounds the optoelectronic devices 32 , 34 and serves as sidewalls for the module. Further, part 30 A of the spacer serves as an interior wall that separates the emission and detection channels 22 , 24 from one another.
- the spacer 30 (including the interior wall portion 30 A) preferably is substantially opaque to, or significantly attenuates, light at wavelengths emitted by the light emitting element 32 and/or detectable by the light detection element 34 .
- the spacer 30 is composed of a polymer material (e.g., epoxy, acrylate, polyurethane, or silicone) containing a non-transparent filler (e.g., carbon black, pigment, or dye). As illustrated in FIG.
- the spacer 30 also laterally surrounds, and is in direct contact with, the silicon substrates 26 A, 26 B, and the interior wall portion 30 A of the spacer separates the two silicon substrates 26 A, 26 B from one another.
- the optics assembly 28 includes transmissive covers 36 A, 36 B that are laterally embedded within substantially opaque material 38 .
- the transmissive covers 36 A, 36 B can be composed, for example, of glass, sapphire or a polymer material.
- the transmissive covers 36 A, 36 B generally are transparent to wavelengths of light emitted or detectable by the optoelectronic devices 32 , 34 .
- the opaque sections 38 can be composed, for example, of the same material as the spacer 30 or some other substantially non-transparent material.
- Each transmissive cover 36 A, 36 B can have one or more optical elements 40 such as lenses or other beam shaping elements formed thereon. Other examples of optics assemblies are described below.
- each silicon substrate 26 A, 26 B can be provided with one or more solder bumps or other conductive contacts 42 (e.g., a ball grid array), which can be coupled electrically to a respective one of the optoelectronic devices 32 , 34 in a known manner.
- solder bumps or other conductive contacts 42 e.g., a ball grid array
- Some implementations include through-silicon vias for the electrical connections.
- a module may include only a single optical channel.
- the module 20 A has a single optical detection channel and includes a light detection element 34 .
- the module may have a single optical emission channel and may include a light emitting element 32 .
- an optical filter is provided in or more of the channels.
- a module 20 B includes two detection channels 24 A, 24 B.
- a first optical filter 44 A is disposed over a first light sensor 34 A
- a second optical filter 44 B is disposed over a second light sensor 34 B.
- the first and second filters 44 A, 44 B may allow the same wavelength (or range of wavelengths) to pass or may be tailored to allow different wavelengths (or ranges of wavelengths) to pass.
- the optical filters may include color filter arrays, IR-cut filters, band-pass filters, monochrome filters, or no filters.
- a wafer refers to a substantially disk- or plate-like shaped item, its extension in one direction (y-direction or vertical direction) is small with respect to its extension in the other two directions (x- and z- or lateral directions).
- the diameter of the wafer is between 5 cm and 40 cm, and can be, for example, between 10 cm and 31 cm.
- the wafer may be cylindrical with a diameter, for example, of 2, 4, 6, 8, or 12 inches, one inch being about 2.54 cm.
- a wafer level process there can be provisions for at least ten modules in each lateral direction, and in some cases at least thirty or even fifty or more modules in each lateral direction.
- the following paragraphs describe an example of such a wafer-level fabrication process for manufacturing optoelectronic modules such as those described above.
- a silicon wafer 100 is provided in which integrated optoelectronic components 102 are formed.
- the wafer can be provided with electrical connections 104 (e.g., solder bumps or ball grid arrays) on its backside and also may include through-silicon via connections.
- Optical filters 106 then can be applied over some or all of the optoelectronic components. In some instances, optical filters may not be applied to any of the optoelectronic components 102 .
- a protective layer e.g., composed of glass or other transparent material may be applied, for example, to protect the optoelectronic components from dust or particles generated during subsequent dicing.
- External light emitters such as LEDs, laser diodes, or VCSELS may be mounted on the silicon wafer as well.
- a support wafer 108 is applied to support the silicon wafer 100 , and, as indicated by FIG. 4C , the wafer is separated (e.g., by dicing) into multiple individual silicon device 110 each of which includes at least one optoelectronic component 102 .
- the silicon devices 110 can be removed from the support wafer 108 and placed on a lower vacuum injection tool 112 (see FIG. 4D ).
- An upper vacuum injection tool 114 is applied to the devices 110 as well.
- the vacuum injection tools 112 , 114 define spaces 116 around the silicon devices 110 .
- a spacer material (e.g., epoxy with a non-transparent filler) 118 is injected into the spaces 116 as illustrated, for example, in FIG. 4E , and subsequently is cured, for example, by ultra-violet (UV) radiation 120 and/or thermal treatment (see FIG. 4F ).
- UV ultra-violet
- the upper tool 114 can be removed.
- the resulting structure can remain on the lower tool 112 , which serves as a support structure during some of the subsequent fabrication steps (see FIG. 4G ).
- a wafer-level optics assembly 122 can be attached (e.g., by adhesive) to the free end of the spacer 118 (see FIG. 4H ).
- the waver-level optics assembly 122 includes transparent windows 124 formed in through-holes of a non-transparent PCB wafer 126 .
- the optics assembly 122 can include one or more beam shaping elements (e.g., lenses) 128 formed (e.g., by a replication technique) on each of the transparent windows 124 to help focus incoming light onto the corresponding light detection element(s).
- beam shaping elements e.g., lenses
- FIG. 4I the resulting structure is separated (e.g., along dicing lines 130 ) into individual optoelectronic modules each of which includes a single optical channel or an array of channels. The modules then can be removed from the lower support tool 112 .
- the spacers 30 may be substantially flush with the bottom of the silicon substrates 26 A, 26 B, in other cases, the spacers may protrude somewhat beyond the bottom of the silicon substrate(s) (see FIG. 5 ). In particular, the spacers 30 may extend beyond the lower surface 50 of the silicon substrate(s) on which the external conductive contacts 42 are located.
- Various types of optics assemblies can be attached to the spacers 30 .
- a respective lens barrel 122 A with appropriate lenses 40 can be provided for each channel (see FIG. 6A ).
- an autofocus mechanism 41 can be included, for example, in the lens barrel 122 A.
- the autofocus mechanism can be implemented, for example, as a tunable lens or a piezo-electric element.
- Electrical connections 43 from the autofocus mechanism 41 to the silicon substrate can be provided, for example, along the surface of the spacer 30 or as through-spacer connections.
- the auto-focus mechanism 41 can be used alone or in conjunction with a glass optical element and/or the customizable vertical alignment features to provide very accurate and precise optical performance for the module.
- a laterally contiguous lens array wafer 122 B can be provided as part of the optics assembly (see FIG. 6B ). In the latter case, a single contiguous lens array wafer may 122 B span across the entire array of channels. Such an arrangement can be particularly advantageous, for example, when all of the channels have the same height.
- the optical assembly may be desirable to position the optical assembly for some of the channels at a height different from that of other channels.
- Such a situation may be helpful in providing focal length correction during the fabrication process. For example, prior to attaching an optics assembly over a particular channel, optical measurement(s) can be made to determine the extent to which the channel's focal length deviates from a specified target value. If the focal length needs to be corrected, one way of providing the correction is to adjust the height of the spacer through mechanical machining. As shown, for example, in FIG. 7A , the spacers 30 can include machine-able features 52 at their free ends.
- each optics assembly 122 C includes a lens 40 and cover glass 36 , only a lens 40 , or only a cover glass 36 .
- the result is a non-contiguous lens array, which allows the optics assembly for each channel to be placed at a different height, if needed. In some cases, this process can result in a multi-channel module in which the optics assembly for one channel is at a height slightly different from the optics assembly for another channel.
- a focal length correction layer 54 is provided (e.g., on a surface of the or cover glass 36 , or on a surface of the lens wafer 38 as illustrated in FIG. 8 ).
- the thickness of the focal length correction layer 54 can be adjusted, for example, by exposing the layer to radiation so as to achieve a specified focal length for the channel.
- some channels may include micro-machined spacer features 52 and/or a focal length correction layer 54 .
- Other channels may include neither of the foregoing features.
- optical filters can be provided for one or more of the channels.
- a filter 44 C can be provided on a surface of the lens assembly wafer 38 ( FIG. 9A ) or on the surface of the cover glass 36 ( FIG. 9B ).
- an optical filter 44 D is integrated into the optics assembly ( FIGS. 9A and 9B ).
- the terms “transparent,” “non-transparent” and “transmissive” are made with reference to the particular wavelength(s) emitted by or detectable by the devices in the module.
- a particular feature for example, may be considered “non-transparent” even though it may allow light of other wavelengths to pass through.
- the modules described here can be useful, for example, as proximity sensor modules or as other optical sensing modules, such as for gesture sensing, recognition or imaging.
- the modules may be integrated into a wide range of small electronic devices, such as smart phones, bio devices, mobile robots, surveillance cameras, camcorders, laptop computers, and tablet computers, among others.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Lens Barrels (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
- This application claims the benefit of U.S. Provisional Application No. 62/039,028, filed Aug. 19, 2014 and U.S. Provisional Application No. 62/056,897, filed Sep. 29, 2014, all of which are incorporated herein by reference in their entirety.
- This disclosure relates to optoelectronic modules having a silicon substrate, and fabrication methods for such modules.
- Smartphones and other devices sometimes include miniaturized optoelectronic modules such as light modules, sensors or cameras. Light modules can include a light emitting element such as a light emitting diode (LED), an infra-red (IR) LED, an organic LED (OLED), an infra-red (IR) laser or a vertical cavity surface emitting laser (VCSEL) that emits light through a lens to outside the device. Other modules can include a light detecting element. For example, CMOS and CCD image sensors can be used in primary or front facing cameras. Likewise, proximity sensors and ambient light sensors can include a light sensing element such as a photodiode. The light emitting and light detecting modules as well as cameras can be used in various combinations. Thus, for example, a light module such as a flash module can be used in combination with a camera that has an imaging sensor. Light emitting modules in combination with light detecting modules also can be used for other applications such as gesture recognition or IR illumination.
- Although various module designs have been proposed, there is a constant need in the industry to improve various aspects of such modules. For example, space in the devices for which the modules are designed often is at a premium. Thus, it is desirable for the module to have as a small a footprint as practicable. Further, poor transfer of heat away from the modules can be problematic in some cases. Likewise, in some situations, when temperatures vary from nominal values, the module's optical properties may become degraded.
- This disclosure describes optoelectronic modules having a silicon substrate, and fabrication methods for such modules.
- One or more of the following advantages are provided by some implementations. For example, by using a silicon substrate in which various electronic and/or optoelectronic components can be formed, the module can have as a relatively small footprint. The overall cost of the module can be reduced in some cases by eliminating the need for (and cost of) a printed circuit board substrate. Likewise, in some instances, at least some wiring to the substrate that might otherwise be required can be avoided by using a silicon substrate. Further, as the thermal conductivity of silicon is relatively high, heat transfer away from the module can be improved. Also, in view of silicon's coefficient of thermal expansion, using a silicon substrate can help reduce degradation of the module's optical properties when temperatures vary from nominal values.
- Depending on the application, a module may have a single optical channel or multiple optical channels. For example, according to one aspect, an optoelectronic module includes a silicon substrate in which or on which there is an optoelectronic device. An optics assembly is disposed over the optoelectronic device. A spacer separates the silicon substrate from the optics assembly.
- The spacer preferably is substantially opaque to, or significantly attenuates, light at wavelengths emitted and/or detectable by the optoelectronic device, which may be implemented as a light emitting element formed in, or mounted on, the silicon substrate or as a light detecting element formed in the silicon substrate. In some implementations, the spacer laterally surrounds, and is in direct contact with, the silicon substrate and may extend beyond an exterior surface of the silicon substrate. Other optical features such as optical filters or focal length correction layers may be provided as well.
- In another aspect, an optoelectronic module includes a first optical channel and a second optical channel. A first optoelectronic device in the first optical channel is integrated in or disposed on first silicon substrate, and a second optoelectronic device in the second optical channel is integrated in or disposed on a second silicon substrate. First and second optics assemblies are disposed, respectively, over the first and second optoelectronic devices. A spacer separates the silicon substrates from the optics assemblies, and a portion of the spacer separates the first and second channels from one another. The spacer laterally surrounds, and is in direct contact with, the first and second silicon substrates.
- In some instances, the first optics assembly is disposed on the spacer at a first distance from the first substrate, and the second optics assembly is disposed on the spacer at a different second distance from the second substrate. In some cases, the first and second optics assemblies form a laterally contiguous array of optical assemblies.
- The present disclosure also describes methods of fabricating optoelectronic modules. For example, in some implementations, a wafer-level method includes applying upper and lower vacuum injection tools to a plurality of optoelectronic devices each of which is integrated in or disposed on a respective silicon substrate. The tools define spaces separating the silicon substrates from one another. The method further includes injecting a polymer material into the spaces, and curing the polymer material to form a spacer. One or more optics assemblies are attached to the spacer so as to obtain a resulting structure in which each of the one or more optics assemblies is disposed over at least one of the optoelectronic devices. The resulting structure then is separated into a plurality of optoelectronic modules each of which includes at least one optical channel.
- Other aspects, features and advantages will be readily apparent form the following detailed description, the accompanying drawings, and the claims.
-
FIG. 1 is an example of a multi-channel optoelectronic module. -
FIG. 2 is an example of a single channel optoelectronic module. -
FIG. 3 is another example of a multi-channel optoelectronic module. -
FIGS. 4A-4I illustrate steps in a wafer-level method of fabricating optoelectronic modules. -
FIG. 5 is a further example of an optoelectronic module. -
FIGS. 6A and 6B illustrate example of modules having different types of optics assemblies. -
FIGS. 7A and 7B illustrate an example of modules having machine-able spacer features. -
FIG. 8 is an example of an optics assembly that includes focal length correction layers. -
FIGS. 9A and 9B illustrate examples of optoelectronic modules having optical filters. - As shown in
FIG. 1 , a first example of anoptoelectronic module 20 includes an array of optical channels. In the illustrated example, themodule 20 includes anemission channel 22 and adetection channel 24. Themodule 20 hassilicon substrates optics assembly 28 by aspacer 30. Thus, interior regions of themodule 20 are bounded by thesubstrates spacer 30 and theoptics assembly 28. - Different portions of each
silicon substrate silicon substrate silicon substrate 26A in theemission channel 22. Likewise, a single light detecting element (e.g., a photodiode) or an array of light detecting elements 34 (e.g., pixels of a CMOS sensor) can be formed in thesilicon substrate 26B in thedetection channel 24. In some instances, additional circuit components may be formed in thesilicon substrates - The
spacer 30 laterally surrounds theoptoelectronic devices part 30A of the spacer serves as an interior wall that separates the emission anddetection channels interior wall portion 30A) preferably is substantially opaque to, or significantly attenuates, light at wavelengths emitted by thelight emitting element 32 and/or detectable by thelight detection element 34. For example, in some cases, thespacer 30 is composed of a polymer material (e.g., epoxy, acrylate, polyurethane, or silicone) containing a non-transparent filler (e.g., carbon black, pigment, or dye). As illustrated inFIG. 1 , thespacer 30 also laterally surrounds, and is in direct contact with, thesilicon substrates interior wall portion 30A of the spacer separates the twosilicon substrates - Details of the
optics assembly 28 may depend on the particular application, In the example ofFIG. 1 , theoptics assembly 28 includes transmissive covers 36A, 36B that are laterally embedded within substantiallyopaque material 38. The transmissive covers 36A, 36B can be composed, for example, of glass, sapphire or a polymer material. The transmissive covers 36A, 36B generally are transparent to wavelengths of light emitted or detectable by theoptoelectronic devices opaque sections 38 can be composed, for example, of the same material as thespacer 30 or some other substantially non-transparent material. Eachtransmissive cover optical elements 40 such as lenses or other beam shaping elements formed thereon. Other examples of optics assemblies are described below. - The exterior side of each
silicon substrate optoelectronic devices - In some implementations, a module may include only a single optical channel. For example, as shown for example, in
FIG. 2 , themodule 20A has a single optical detection channel and includes alight detection element 34. In other cases, the module may have a single optical emission channel and may include alight emitting element 32. - In some instances, an optical filter is provided in or more of the channels. For example, as shown in
FIG. 3 , amodule 20B includes twodetection channels optical filter 44A is disposed over afirst light sensor 34A, and a secondoptical filter 44B is disposed over a secondlight sensor 34B. The first andsecond filters - The foregoing modules can be fabricated, for example, in a wafer-level process. Wafer-level processes allow multiple modules to be fabricated in parallel at the same time. Generally, a wafer refers to a substantially disk- or plate-like shaped item, its extension in one direction (y-direction or vertical direction) is small with respect to its extension in the other two directions (x- and z- or lateral directions). In some implementations, the diameter of the wafer is between 5 cm and 40 cm, and can be, for example, between 10 cm and 31 cm. The wafer may be cylindrical with a diameter, for example, of 2, 4, 6, 8, or 12 inches, one inch being about 2.54 cm. In some implementations of a wafer level process, there can be provisions for at least ten modules in each lateral direction, and in some cases at least thirty or even fifty or more modules in each lateral direction. The following paragraphs describe an example of such a wafer-level fabrication process for manufacturing optoelectronic modules such as those described above.
- As illustrated in
FIG. 4A , asilicon wafer 100 is provided in which integratedoptoelectronic components 102 are formed. The wafer can be provided with electrical connections 104 (e.g., solder bumps or ball grid arrays) on its backside and also may include through-silicon via connections.Optical filters 106 then can be applied over some or all of the optoelectronic components. In some instances, optical filters may not be applied to any of theoptoelectronic components 102. In some cases, a protective layer (e.g., composed of glass or other transparent material) may be applied, for example, to protect the optoelectronic components from dust or particles generated during subsequent dicing. External light emitters such as LEDs, laser diodes, or VCSELS may be mounted on the silicon wafer as well. Next, as shown inFIG. 4B , asupport wafer 108 is applied to support thesilicon wafer 100, and, as indicated byFIG. 4C , the wafer is separated (e.g., by dicing) into multipleindividual silicon device 110 each of which includes at least oneoptoelectronic component 102. - The
silicon devices 110 can be removed from thesupport wafer 108 and placed on a lower vacuum injection tool 112 (seeFIG. 4D ). An uppervacuum injection tool 114 is applied to thedevices 110 as well. When brought into contact with thesilicon device2 110 as shown inFIG. 4D , thevacuum injection tools spaces 116 around thesilicon devices 110. A spacer material (e.g., epoxy with a non-transparent filler) 118 is injected into thespaces 116 as illustrated, for example, inFIG. 4E , and subsequently is cured, for example, by ultra-violet (UV)radiation 120 and/or thermal treatment (seeFIG. 4F ). - After the
spacer material 118 is cured, theupper tool 114 can be removed. The resulting structure can remain on thelower tool 112, which serves as a support structure during some of the subsequent fabrication steps (seeFIG. 4G ). For example, a wafer-level optics assembly 122 can be attached (e.g., by adhesive) to the free end of the spacer 118 (seeFIG. 4H ). In this example, the waver-level optics assembly 122 includestransparent windows 124 formed in through-holes of anon-transparent PCB wafer 126. Theoptics assembly 122 can include one or more beam shaping elements (e.g., lenses) 128 formed (e.g., by a replication technique) on each of thetransparent windows 124 to help focus incoming light onto the corresponding light detection element(s). Next, as indicated byFIG. 4I , the resulting structure is separated (e.g., along dicing lines 130) into individual optoelectronic modules each of which includes a single optical channel or an array of channels. The modules then can be removed from thelower support tool 112. - Various modifications to the foregoing method and modules can be implemented. For example, although in some cases the bottom of the
spacers 30 may be substantially flush with the bottom of thesilicon substrates FIG. 5 ). In particular, thespacers 30 may extend beyond thelower surface 50 of the silicon substrate(s) on which the externalconductive contacts 42 are located. - Various types of optics assemblies can be attached to the
spacers 30. For example, instead of the wafer-level optics assembly 122 ofFIG. 4H , arespective lens barrel 122A withappropriate lenses 40 can be provided for each channel (seeFIG. 6A ). In some cases, anautofocus mechanism 41 can be included, for example, in thelens barrel 122A. The autofocus mechanism can be implemented, for example, as a tunable lens or a piezo-electric element.Electrical connections 43 from theautofocus mechanism 41 to the silicon substrate can be provided, for example, along the surface of thespacer 30 or as through-spacer connections. The auto-focus mechanism 41 can be used alone or in conjunction with a glass optical element and/or the customizable vertical alignment features to provide very accurate and precise optical performance for the module. - Further, in some cases a laterally contiguous
lens array wafer 122B can be provided as part of the optics assembly (seeFIG. 6B ). In the latter case, a single contiguous lens array wafer may 122B span across the entire array of channels. Such an arrangement can be particularly advantageous, for example, when all of the channels have the same height. - On the other hand, in some cases, it may be desirable to position the optical assembly for some of the channels at a height different from that of other channels. Such a situation may be helpful in providing focal length correction during the fabrication process. For example, prior to attaching an optics assembly over a particular channel, optical measurement(s) can be made to determine the extent to which the channel's focal length deviates from a specified target value. If the focal length needs to be corrected, one way of providing the correction is to adjust the height of the spacer through mechanical machining. As shown, for example, in
FIG. 7A , thespacers 30 can include machine-able features 52 at their free ends. The free end of thespacer 30 for the particular channel can be micro-machined so as to achieve a specified focal length when anoptics assembly 122C is attached to the spacer (seeFIG. 7B ). Theoptics assembly 122C then can be positioned over the channel, for example, using pick-and place equipment. In some instances, eachoptics assembly 122C includes alens 40 andcover glass 36, only alens 40, or only acover glass 36. As shown inFIG. 7B , instead of contiguous lens array, the result is a non-contiguous lens array, which allows the optics assembly for each channel to be placed at a different height, if needed. In some cases, this process can result in a multi-channel module in which the optics assembly for one channel is at a height slightly different from the optics assembly for another channel. - Instead of, or in addition to, micromachining the height of the
spacer 30 to adjust a channel's focal length, in some cases, a focallength correction layer 54 is provided (e.g., on a surface of the orcover glass 36, or on a surface of thelens wafer 38 as illustrated inFIG. 8 ). The thickness of the focallength correction layer 54 can be adjusted, for example, by exposing the layer to radiation so as to achieve a specified focal length for the channel. Thus, some channels may include micro-machined spacer features 52 and/or a focallength correction layer 54. Other channels may include neither of the foregoing features. After micro-machining the height of the spacer(s) 30 and/or adjusting the thickness of the focallength correction layer 54, an optics assembly can be attached to the spacer. - As previously described, optical filters can be provided for one or more of the channels. In some implementations, instead of, or in addition to, providing a filter directly on the optoelectronic device (e.g., 34A), a
filter 44C can be provided on a surface of the lens assembly wafer 38 (FIG. 9A ) or on the surface of the cover glass 36 (FIG. 9B ). In some cases, anoptical filter 44D is integrated into the optics assembly (FIGS. 9A and 9B ). - As used in this disclosure, the terms “transparent,” “non-transparent” and “transmissive” are made with reference to the particular wavelength(s) emitted by or detectable by the devices in the module. Thus, a particular feature, for example, may be considered “non-transparent” even though it may allow light of other wavelengths to pass through.
- The modules described here can be useful, for example, as proximity sensor modules or as other optical sensing modules, such as for gesture sensing, recognition or imaging. The modules may be integrated into a wide range of small electronic devices, such as smart phones, bio devices, mobile robots, surveillance cameras, camcorders, laptop computers, and tablet computers, among others.
- Various modifications can be made within the spirit of the foregoing description. Accordingly, other implementations are within the scope of the claims.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/357,627 US10680023B2 (en) | 2014-08-19 | 2019-03-19 | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462039028P | 2014-08-19 | 2014-08-19 | |
US201462056897P | 2014-09-29 | 2014-09-29 | |
US14/823,174 US9711552B2 (en) | 2014-08-19 | 2015-08-11 | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
US15/622,813 US10283542B2 (en) | 2014-08-19 | 2017-06-14 | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
US16/357,627 US10680023B2 (en) | 2014-08-19 | 2019-03-19 | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/622,813 Continuation US10283542B2 (en) | 2014-08-19 | 2017-06-14 | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
Publications (2)
Publication Number | Publication Date |
---|---|
US20190326340A1 true US20190326340A1 (en) | 2019-10-24 |
US10680023B2 US10680023B2 (en) | 2020-06-09 |
Family
ID=55348956
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/823,174 Active US9711552B2 (en) | 2014-08-19 | 2015-08-11 | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
US15/622,813 Active US10283542B2 (en) | 2014-08-19 | 2017-06-14 | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
US16/357,627 Active US10680023B2 (en) | 2014-08-19 | 2019-03-19 | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/823,174 Active US9711552B2 (en) | 2014-08-19 | 2015-08-11 | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
US15/622,813 Active US10283542B2 (en) | 2014-08-19 | 2017-06-14 | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
Country Status (8)
Country | Link |
---|---|
US (3) | US9711552B2 (en) |
EP (1) | EP3183745B1 (en) |
JP (2) | JP2017531310A (en) |
KR (1) | KR102434816B1 (en) |
CN (1) | CN106796916B (en) |
SG (2) | SG11201700690VA (en) |
TW (1) | TWI702717B (en) |
WO (1) | WO2016028227A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016052599A1 (en) * | 2014-09-30 | 2016-04-07 | 積水化学工業株式会社 | Heat-conductingfoam sheet for electronic devices |
US20160307881A1 (en) * | 2015-04-20 | 2016-10-20 | Advanced Semiconductor Engineering, Inc. | Optical sensor module and method for manufacturing the same |
EP3104190B1 (en) * | 2015-06-08 | 2024-04-17 | ams AG | Optical sensor arrangement |
TWI777947B (en) | 2016-03-23 | 2022-09-21 | 新加坡商海特根微光學公司 | Optoelectronic module assembly and manufacturing method |
US10204947B2 (en) * | 2016-09-09 | 2019-02-12 | Omnivision Technologies, Inc. | Cover-glass-free array camera with individually light-shielded cameras |
DE102016118990A1 (en) * | 2016-10-06 | 2018-04-12 | Osram Opto Semiconductors Gmbh | SENSOR |
DE102016118996A1 (en) * | 2016-10-06 | 2018-04-12 | Osram Opto Semiconductors Gmbh | MANUFACTURE OF SENSORS |
JP7171568B2 (en) * | 2016-11-24 | 2022-11-15 | エルジー イノテック カンパニー リミテッド | Semiconductor device and display device including the same |
DE112019003866T8 (en) * | 2018-07-30 | 2021-07-15 | Ams Sensors Singapore Pte. Ltd. | LOW HEIGHT OPTOELECTRONIC MODULES AND PACKAGES |
US10707195B2 (en) | 2018-10-09 | 2020-07-07 | Waymo Llc | Multichannel monostatic rangefinder |
CN113646902A (en) * | 2019-03-28 | 2021-11-12 | ams传感器新加坡私人有限公司 | Optoelectronic module |
US11269376B2 (en) * | 2020-06-11 | 2022-03-08 | Apple Inc. | Electronic device |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3619773B2 (en) * | 2000-12-20 | 2005-02-16 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor device |
JP4750983B2 (en) * | 2001-09-21 | 2011-08-17 | シチズン電子株式会社 | Bi-directional optical transmission device |
JP2004006753A (en) * | 2002-04-05 | 2004-01-08 | Canon Inc | Package for optical semiconductor |
JP2006245118A (en) * | 2005-03-01 | 2006-09-14 | Konica Minolta Opto Inc | Imaging device and its manufacturing method |
US7692256B2 (en) | 2007-03-23 | 2010-04-06 | Heptagon Oy | Method of producing a wafer scale package |
JP2008283002A (en) * | 2007-05-10 | 2008-11-20 | Sharp Corp | Imaging element module and its manufacturing method |
TW200937642A (en) * | 2007-12-19 | 2009-09-01 | Heptagon Oy | Wafer stack, integrated optical device and method for fabricating the same |
JP5554957B2 (en) | 2009-10-09 | 2014-07-23 | オリンパス株式会社 | Imaging unit |
JP5356980B2 (en) * | 2009-11-06 | 2013-12-04 | シャープ株式会社 | Electronic element module and manufacturing method thereof, electronic element wafer module and manufacturing method thereof, and electronic information device |
JP2011180293A (en) * | 2010-02-26 | 2011-09-15 | Fujifilm Corp | Lens array |
SG187643A1 (en) * | 2010-08-17 | 2013-03-28 | Heptagon Micro Optics Pte Ltd | Method of manufacturing a plurality of optical devices for cameras |
KR101262470B1 (en) | 2011-01-31 | 2013-05-08 | 엘지이노텍 주식회사 | Lens assembly and camera module |
JP2014521992A (en) * | 2011-07-19 | 2014-08-28 | ヘプタゴン・マイクロ・オプティクス・プライベート・リミテッド | Method for manufacturing passive optical component and device comprising passive optical component |
EP2659510B1 (en) | 2011-07-19 | 2019-01-09 | Heptagon Micro Optics Pte. Ltd. | Method for manufacturing opto-electronic modules |
EP2742529B1 (en) * | 2011-08-10 | 2020-11-11 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic module and method for manufacturing the same |
TW201310102A (en) | 2011-08-17 | 2013-03-01 | Pixart Imaging Inc | Lens module and manufacture method thereof |
US10444477B2 (en) * | 2011-08-25 | 2019-10-15 | Ams Sensors Singapore Pte. Ltd. | Wafer-level fabrication of optical devices with front focal length correction |
KR102177372B1 (en) | 2011-12-22 | 2020-11-12 | 헵타곤 마이크로 옵틱스 피티이. 리미티드 | Opto-electronic modules, in particular flash modules, and method for manufacturing the same |
US9063005B2 (en) * | 2012-04-05 | 2015-06-23 | Heptagon Micro Optics Pte. Ltd. | Reflowable opto-electronic module |
US9570648B2 (en) * | 2012-06-15 | 2017-02-14 | Intersil Americas LLC | Wafer level optical proximity sensors and systems including wafer level optical proximity sensors |
NL2009740C2 (en) | 2012-11-01 | 2014-05-06 | Ihc Holland Ie Bv | Device for and method of transferring personnel, equipment and/or structural elements from a surface vessel to an offshore structure. |
US9595553B2 (en) * | 2012-11-02 | 2017-03-14 | Heptagon Micro Optics Pte. Ltd. | Optical modules including focal length adjustment and fabrication of the optical modules |
US9094593B2 (en) | 2013-07-30 | 2015-07-28 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules |
US9123735B2 (en) * | 2013-07-31 | 2015-09-01 | Infineon Technologies Austria Ag | Semiconductor device with combined passive device on chip back side |
TWI667767B (en) * | 2014-03-31 | 2019-08-01 | 菱生精密工業股份有限公司 | Package structure of integrated optical module |
-
2015
- 2015-08-11 US US14/823,174 patent/US9711552B2/en active Active
- 2015-08-18 TW TW104126868A patent/TWI702717B/en active
- 2015-08-18 KR KR1020177007206A patent/KR102434816B1/en active IP Right Grant
- 2015-08-18 EP EP15833195.9A patent/EP3183745B1/en active Active
- 2015-08-18 CN CN201580048491.XA patent/CN106796916B/en active Active
- 2015-08-18 WO PCT/SG2015/050264 patent/WO2016028227A1/en active Application Filing
- 2015-08-18 JP JP2017509730A patent/JP2017531310A/en active Pending
- 2015-08-18 SG SG11201700690VA patent/SG11201700690VA/en unknown
- 2015-08-18 SG SG10201710235VA patent/SG10201710235VA/en unknown
-
2017
- 2017-06-14 US US15/622,813 patent/US10283542B2/en active Active
-
2019
- 2019-03-19 US US16/357,627 patent/US10680023B2/en active Active
- 2019-11-28 JP JP2019215475A patent/JP2020038998A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
EP3183745A1 (en) | 2017-06-28 |
US20170287963A1 (en) | 2017-10-05 |
US10680023B2 (en) | 2020-06-09 |
JP2020038998A (en) | 2020-03-12 |
US9711552B2 (en) | 2017-07-18 |
CN106796916B (en) | 2019-11-08 |
KR102434816B1 (en) | 2022-08-19 |
EP3183745A4 (en) | 2018-08-15 |
SG10201710235VA (en) | 2018-01-30 |
TWI702717B (en) | 2020-08-21 |
US10283542B2 (en) | 2019-05-07 |
US20160056194A1 (en) | 2016-02-25 |
JP2017531310A (en) | 2017-10-19 |
WO2016028227A1 (en) | 2016-02-25 |
KR20170045259A (en) | 2017-04-26 |
TW201620124A (en) | 2016-06-01 |
CN106796916A (en) | 2017-05-31 |
SG11201700690VA (en) | 2017-03-30 |
EP3183745B1 (en) | 2019-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10680023B2 (en) | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules | |
US11942580B2 (en) | Compact opto-electronic modules and fabrication methods for such modules | |
US10204945B2 (en) | Optical modules including customizable spacers for focal length adjustment and/or reduction of tilt, and fabrication of the optical modules | |
US10679976B2 (en) | Compact optoelectronic modules | |
US10199426B2 (en) | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules | |
KR102208832B1 (en) | Assembly of wafer stacks | |
US20150325613A1 (en) | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules | |
US10475830B2 (en) | Optical modules including customizable spacers for focal length adjustment and/or reduction of tilt, and fabrication of the optical modules | |
US9608142B2 (en) | Optoelectronic modules with optics integrated into a cap | |
TW201816981A (en) | Optoelectronic modules including optoelectronic device subassemblies and methods of manufacturing the same | |
US10254158B2 (en) | Modules having multiple optical channels including optical elements at different heights above the optoelectronic devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
AS | Assignment |
Owner name: AMS SENSORS SINGAPORE PTE. LTD., SINGAPORE Free format text: CHANGE OF NAME;ASSIGNOR:HEPTAGON MICRO OPTICS PTE. LTD.;REEL/FRAME:048646/0359 Effective date: 20180205 Owner name: HEPTAGON MICRO OPTICS PTE. LTD., SINGAPORE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:RUDMANN, HARTMUT;CESANA, MARIO;GEIGER, JENS;AND OTHERS;SIGNING DATES FROM 20141007 TO 20141118;REEL/FRAME:048645/0809 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: PUBLICATIONS -- ISSUE FEE PAYMENT VERIFIED |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |