US20190189678A1 - Light emitting diode having current confinement structure - Google Patents
Light emitting diode having current confinement structure Download PDFInfo
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- US20190189678A1 US20190189678A1 US15/849,628 US201715849628A US2019189678A1 US 20190189678 A1 US20190189678 A1 US 20190189678A1 US 201715849628 A US201715849628 A US 201715849628A US 2019189678 A1 US2019189678 A1 US 2019189678A1
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- 239000004065 semiconductor Substances 0.000 claims abstract description 87
- 239000002800 charge carrier Substances 0.000 claims abstract description 7
- 230000007423 decrease Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- -1 AlGaN Chemical class 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
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- 238000005265 energy consumption Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H01L51/5203—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
Definitions
- the present disclosure relates to a light emitting diode, and more particularly, to a light emitting diode having a current confinement structure.
- LEDs light-emitting diodes
- LEDs have many advantages including low energy consumption, long lifetime, small size, and fast switching, and hence conventional lighting, such as incandescent lighting, is gradually replaced by LED lights.
- a light-emitting diode including a first type semiconductor layer, a first electrode, a second type semiconductor layer, and a second electrode.
- the first type semiconductor layer includes a first low resistance portion, at least one second low resistance portion, and a high resistance portion.
- the high resistance portion is between the first low resistance portion and the second low resistance portion.
- the first low resistance portion is enclosed by the high resistance portion.
- a resistivity of the first type semiconductor layer increases from the first low resistance portion toward the high resistance portion and decreases from the high resistance portion toward the second low resistance portion.
- the first electrode is electrically connected to the first low resistance portion and there is substantially no current flowing between the first electrode and the second low resistance portion.
- the high resistance portion is configured to confine charge carriers substantially within the first low resistance portion. At least a portion of the first type semiconductor layer is between the first electrode and the second type semiconductor layer.
- the second electrode is electrically connected to the second type semiconductor layer.
- FIG. 1 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure
- FIG. 2 is a schematic top view of a light emitting diode according to some embodiments of the present disclosure
- FIG. 3 is a schematic top view of a light emitting diode according to some embodiments of the present disclosure
- FIG. 4 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure
- FIG. 5 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure
- FIG. 6 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure.
- FIG. 7 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure.
- FIG. 8 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure.
- FIG. 9A is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure.
- FIG. 9B is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure.
- FIG. 10 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure.
- FIG. 11 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure.
- FIG. 12 is a schematic top view of a light emitting diode according to some embodiments of the present disclosure.
- FIG. 13 is a schematic top view of a light emitting diode according to some embodiments of the present disclosure.
- FIG. 14 is a schematic top view of a light emitting diode according to some embodiments of the present disclosure.
- FIG. 15 is a schematic top view of a light emitting diode according to some embodiments of the present disclosure.
- over may refer to a relative position of one layer with respect to other layers.
- One layer “over” or “on” another layer or bonded “to” another layer may be directly in contact with the other layer or may have one or more intervening layers.
- One layer “between” layers may be directly in contact with the layers or may have one or more intervening layers.
- FIG. 1 is a schematic cross-sectional view of a light emitting diode 100 A according to some embodiments of the present disclosure.
- FIG. 2 is a schematic top view of the light emitting diode 100 A of FIG. 1 .
- a light-emitting diode 100 A including a first type semiconductor layer 110 , a first electrode 150 , a second type semiconductor layer 130 and a second electrode 160 is provided.
- the first type semiconductor layer 110 includes a first low resistance portion 112 , at least one second low resistance portion 116 , and a high resistance portion 114 .
- the high resistance portion 114 is between the first low resistance portion 112 and the second low resistance portion 116 , and the high resistance portion 114 defines a shape of the first low resistance portion 112 .
- the first low resistance portion 112 is enclosed by the high resistance portion 114 , and a resistivity of the first type semiconductor layer 110 increases from the first low resistance portion 112 toward the high resistance portion 114 and decreases from the high resistance portion 114 toward the second low resistance portion 116 .
- the first electrode 150 is electrically connected to the first low resistance portion 112 . There is substantially no current flowing between the first electrode 150 and the second low resistance portion 116 .
- the “substantially no current” means the current is less than a junction leakage current of the LED under consideration.
- the first electrode 150 is in contact with at least a portion of the first low resistance portion 112 and at least a portion of the high resistance portion 114 and is free from contacting with the second low resistance portion 116 .
- At least a portion of the first type semiconductor layer 110 is between the first electrode 150 and the second type semiconductor layer 130 .
- the second electrode 160 is electrically connected to the second type semiconductor layer 130 .
- the first type semiconductor layer 110 is made of a p-type doped semiconductor material
- the second type semiconductor layer 130 is made of an n-type semiconductor material.
- the first type semiconductor layer 110 is made of a p-doped compound such as AlGaN, InGaN, GaN, AlInP, AlInGaP, AlGaAs, GaAs, GaP:Zn—O, or the like.
- the high resistance portion 114 is configured to confine charge carriers substantially within the first low resistance portion 112 . Specifically, since the resistivity of the first type semiconductor layer 110 laterally increases from the first low resistance portion 112 toward the high resistance portion 114 , when the light emitting diode 100 A is biased, charge carriers are apt to flow through the first type semiconductor layer 110 via the first low resistance portion 112 .
- light emitting diode 100 A further includes an active layer 120 between the first type semiconductor layer 110 and the second type semiconductor layer 130 .
- FIG. 3 is a schematic top view of a light emitting diode 100 B according to some embodiments of the present disclosure, in which the first electrode 150 is omitted for simplicity. It should be pointed out that a difference between the light emitting diode 100 B illustrated in FIG. 3 and the light emitting diode 100 A illustrated in FIG. 2 is that, the high resistance portion 114 illustrated in FIG. 2 is surrounded by the second low resistance portion 116 , while the high resistance portion 114 illustrated in FIG. 3 is surrounded by a plurality of the second low resistance portions 116 A, 116 B, 116 C.
- the second low resistance portions 116 A, 116 B, 116 C may have the same resistivity, or at least two of the second low resistance portions 116 A, 116 B, 116 C have different resistivities.
- the light emitting diode 100 B illustrated in FIG. 3 details which are similar to the light emitting diode 100 A illustrated in FIG. 2 are not repeated to avoid duplicity.
- FIG. 4 is a schematic cross-sectional view of a light emitting diode 100 C according to some embodiments of the present disclosure. It should be pointed out that a difference between the light emitting diode 100 C illustrated in FIG. 4 and the light emitting diode 100 A illustrated in FIG. 1 is that, the first electrode 150 is in contact with at least a portion of the first low resistance portion 112 and is free from contacting with the high resistance portion 114 and the second low resistance portion 116 . In the light emitting diode 100 C illustrated in FIG. 4 , details which are similar to the light emitting diode 100 A illustrated in FIG. 1 are not repeated to avoid duplicity.
- FIG. 5 is a schematic cross-sectional view of a light emitting diode 100 D according to some embodiments of the present disclosure. It should be pointed out that a difference between the light emitting diode 100 D illustrated in FIG. 5 and the light emitting diode 100 A illustrated in FIG. 1 is that, apart from features which has been illustrated in the embodiments supported by FIG. 1 , the light emitting diode 100 D further includes a first current control layer 140 . In some embodiments, at least a portion of the first current control layer 140 is between the first electrode 150 and the first type semiconductor layer 110 , and the first current control layer 140 has a first opening 142 therein.
- at least a portion of the first current control layer 140 is formed between the first electrode 150 and the second low resistance portion 116 .
- the first electrode 150 and the first current control layer 140 are further extended outwards over the second low resistance portion 116 , and the first electrode 150 is separated from the second low resistance portion 116 by the first current control layer 140 .
- the light emitting diode 100 D illustrated in FIG. 5 details which are similar to the light emitting diode 100 A illustrated in FIG. 1 are not repeated to avoid duplicity.
- FIG. 6 is a schematic cross-sectional view of a light emitting diode 100 E according to some embodiments of the present disclosure. It should be pointed out that a difference between the light emitting diode 100 E illustrated in FIG. 6 and the light emitting diode 100 D illustrated in FIG. 5 is that, apart from features which has been illustrated in the embodiments supported by FIG. 5 , the first type semiconductor layer 110 of the light emitting diode 100 E further includes a third low resistance portion 118 connecting the first low resistance portion 112 and the second low resistance portion 116 , and the high resistance portion 114 is separated from the active layer 120 by the third low resistance portion 118 .
- the resistivity of the first type semiconductor layer 110 increases from the third low resistance portion 118 toward the high resistance portion 114 .
- the first electrode 150 is in contact with at least a portion of the first low resistance portion 112 and is free from contacting with the second low resistance portion 116 .
- the light emitting diode 100 E may have no current control layer 140 .
- FIG. 7 is a schematic cross-sectional view of a light emitting diode 100 F according to some embodiments of the present disclosure. It should be pointed out that a difference between the light emitting diode 100 F illustrated in FIG. 7 and the light emitting diode 100 D illustrated in FIG. 5 is that, apart from features which has been illustrated in the embodiments supported by FIG. 5 , the light emitting diode 100 F further includes a second current control layer 170 . At least a portion of the second current control layer 170 is between the top surface of the first type semiconductor layer 110 and the second electrode 160 .
- the second current control layer 170 has a second opening 172 therein, and a vertical projection of the second opening 172 projected on the top surface of the first type semiconductor layer 110 at least partially overlaps with the first low resistance portion 112 .
- a portion of the second current control layer 170 is between the high resistance portion 114 and the active layer 120 , and the current control layer 170 is in contact with the active layer 120 .
- the second current control layer 170 is extended between the second low resistance portion 116 and the active layer 120 , and thus the second low resistance portion 116 and the active layer 120 are separated by the second current control layer 170 .
- FIG. 8 is a schematic cross-sectional view of a light emitting diode 100 G according to some embodiments of the present disclosure. It should be pointed out that a difference between the light emitting diode 100 G illustrated in FIG. 8 and the light emitting diode 100 F illustrated in FIG. 7 is that, the second current control layer 170 of the light emitting diode 100 F is embedded in the first type semiconductor layer 110 and separated from the active layer 120 by a portion of the first type semiconductor layer 110 . In the light emitting diode 100 G illustrated in FIG. 8 , details which are similar to the light emitting diode 100 F illustrated in FIG. 7 are not repeated to avoid duplicity.
- FIG. 9A is a schematic cross-sectional view of a light emitting diode 100 H 1 according to some embodiments of the present disclosure. It should be pointed out that a difference between the light emitting diodes 100 H 1 illustrated in FIG. 9A and the light emitting diode 100 A illustrated in FIG. 1 is that, apart from features which has been illustrated in the embodiments supported by FIG. 1 , the light emitting diode 100 H 1 further includes a current control layer 140 in the first type semiconductor layer 110 .
- the current control layer 140 has an opening 142 therein, and a vertical projection of the opening 142 projected on a top surface of the first type semiconductor layer 110 at least partially overlaps with the first low resistance portion 112 .
- the current control layer 140 is in contact with the active layer 120 .
- the first electrode 150 is extended outwards over and in contact with the second low resistance portion 116 . However, there is substantially no current flowing between the first electrode 150 and the second low resistance portion 116 . Furthermore, the current control layer 140 is extended between the second low resistance portion 116 and the active layer 120 , and thus the second low resistance portion 116 and the active layer 120 are separated by the current control layer 140 .
- the light emitting diode 100 H 1 further includes a current control layer 170 , and at least a portion of the current control layer 170 is between the second electrode 160 and the second type semiconductor layer 130 .
- the current control layer 170 has an opening 172 therein. A vertical projection of the opening 172 projected on a top surface of the first type semiconductor layer 110 at least partially overlaps with the first low resistance portion 112 , and the second electrode 160 is electrically connected to the second type semiconductor layer 130 through the opening 172 .
- the current control layer 170 is between the second type semiconductor layer 130 and the active layer 120 , and the current control layer 170 is in contact with the active layer 120 .
- the current control layer 170 is embedded in the second type semiconductor layer 130 and separated from the active layer 120 by a portion of the second type semiconductor layer 130 .
- FIG. 9B is a schematic cross-sectional view of a light emitting diode 100 H 2 according to some embodiments of the present disclosure. It should be pointed out that a difference between the light emitting diodes 100 H 2 illustrated in FIG. 9B and the light emitting diode 100 H 1 illustrated in FIG. 9A is that, apart from features which has been illustrated in the embodiments supported by FIG. 9A , the current control layer 140 is separated from the active layer 120 by a portion of the first type semiconductor layer 110 . That is, the current control layer 140 is embedded in the first type semiconductor layer 110 without contacting with the active layer 120 .
- the current control layer 170 is between the second electrode 160 and the second type semiconductor layer 130 . In some embodiments, the current control layer 170 is between the second type semiconductor layer 130 and the active layer 120 , and the current control layer 170 is in contact with the active layer 120 . In some embodiments, the current control layer 170 is embedded in the second type semiconductor layer 130 and separated from the active layer 120 by a portion of the second type semiconductor layer 130 . In the light emitting diode 100 H 2 illustrated in FIG. 9B , details which are similar to the light emitting diode 100 H 1 illustrated in FIG. 9A are not repeated to avoid duplicity.
- FIG. 10 is a schematic cross-sectional view of a light emitting diode 1001 according to some embodiments of the present disclosure. It should be pointed out that a difference between the light emitting diode 1001 illustrated in FIG. 10 and the light emitting diode 100 D illustrated in FIG. 5 is that, apart from features which has been illustrated in the embodiments supported by FIG. 5 , the light emitting diode 1001 further includes a current control layer 170 in the second type semiconductor layer 130 , and the current control layer 170 has an opening 172 therein. In addition, a vertical projection of the opening 172 projected on a top surface of the first type semiconductor layer 110 at least partially overlaps with the first low resistance portion 112 . In some embodiments as illustrated by FIG. 10 , the current control layer 170 is in contact with the active layer 120 .
- FIG. 11 is a schematic cross-sectional view of a light emitting diode 100 J according to some embodiments of the present disclosure. It should be pointed out that a difference between the light emitting diode 100 J illustrated in FIG. 11 and the light emitting diode 1001 illustrated in FIG. 10 is that, apart from features which has been illustrated in the embodiments supported by FIG. 10 , the current control layer 170 is separated from the active layer 120 by a portion of the second type semiconductor layer 130 . That is, the current control layer 170 is embedded in the second type semiconductor layer 130 without contacting with the active layer 120 . In some embodiments, the current control layer 170 is between the second electrode 160 and the second type semiconductor layer 130 . In the light emitting diode 100 J illustrated in FIG. 11 , details which are similar to the light emitting diode 1001 illustrated in FIG. 10 are not repeated to avoid duplicity.
- FIGS. 12 and 13 are schematic top views of light emitting diodes 100 K, 100 L according to some embodiments of the present disclosure, in which the first electrode 150 is omitted for simplicity.
- the contours of a side wall 117 of the light emitting diodes 100 A, 100 B are circular, but the disclosure is not limited to these embodiments.
- the contour of the side wall 117 may be hexagonal (as illustrated by FIG. 12 ), octagon or quadrilateral (as illustrated by FIG. 13 ), and the shapes should not be restricted herein.
- FIGS. 14 and 15 are schematic top views of light emitting diodes 100 M, 100 N according to some embodiments of the present disclosure, in which the first electrode 150 is omitted for simplicity.
- the contours of the first low resistance portion 112 and the high resistance portion 114 are circular, but the disclosure is not limited to these embodiments.
- the contours of the first low resistance portion 112 and the high resistance portion 114 may be oval (as illustrated by FIG. 14 ), octagonal (as illustrated by FIG. 15 ), or the like, and the shapes should not be restricted herein.
- the contours of the first low resistance portion 112 and the high resistance portion 114 may also be different in shapes.
- the high resistance portion is configured to confine charge carriers substantially within the first low resistance portion. Specifically, since the resistivity of the first type semiconductor layer laterally increases from the first low resistance portion toward the high resistance portion, when the light emitting diode is biased, charge carriers are apt to flow through the first type semiconductor layer via the first low resistance portion, therefore improving the luminous efficiency of the light emitting diode.
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Abstract
Description
- The present disclosure relates to a light emitting diode, and more particularly, to a light emitting diode having a current confinement structure.
- In the recent years, light-emitting diodes (LEDs) have become popular in general and commercial lighting applications. As light sources, LEDs have many advantages including low energy consumption, long lifetime, small size, and fast switching, and hence conventional lighting, such as incandescent lighting, is gradually replaced by LED lights.
- According to some embodiments of the present disclosure, a light-emitting diode (LED) including a first type semiconductor layer, a first electrode, a second type semiconductor layer, and a second electrode is provided. The first type semiconductor layer includes a first low resistance portion, at least one second low resistance portion, and a high resistance portion. The high resistance portion is between the first low resistance portion and the second low resistance portion. The first low resistance portion is enclosed by the high resistance portion. A resistivity of the first type semiconductor layer increases from the first low resistance portion toward the high resistance portion and decreases from the high resistance portion toward the second low resistance portion. The first electrode is electrically connected to the first low resistance portion and there is substantially no current flowing between the first electrode and the second low resistance portion. The high resistance portion is configured to confine charge carriers substantially within the first low resistance portion. At least a portion of the first type semiconductor layer is between the first electrode and the second type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer.
- It is to be understood that both the foregoing general description and the following detailed description are by examples, and are intended to provide further explanation of the invention as claimed.
- The invention can be more fully understood by reading the following detailed description of the embodiment, with reference made to the accompanying drawings as follows:
-
FIG. 1 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 2 is a schematic top view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 3 is a schematic top view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 4 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 5 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 6 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 7 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 8 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 9A is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 9B is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 10 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 11 is a schematic cross-sectional view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 12 is a schematic top view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 13 is a schematic top view of a light emitting diode according to some embodiments of the present disclosure; -
FIG. 14 is a schematic top view of a light emitting diode according to some embodiments of the present disclosure; and -
FIG. 15 is a schematic top view of a light emitting diode according to some embodiments of the present disclosure. - Reference will now be made in detail to the present embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
- In various embodiments, description is made with reference to figures. However, certain embodiments may be practiced without one or more of these specific details, or in combination with other known methods and configurations. In the following description, numerous specific details are set forth, such as specific configurations, dimensions and processes, etc., in order to provide a thorough understanding of the present invention. In other instances, well-known semiconductor processes and manufacturing techniques have not been described in particular detail in order to not unnecessarily obscure the present invention. Reference throughout this specification to “one embodiment,” “an embodiment” or the like means that a particular feature, structure, configuration, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase “in one embodiment,” “in an embodiment” or the like in various places throughout this specification are not necessarily referring to the same embodiment of the invention. Furthermore, the particular features, structures, configurations, or characteristics may be combined in any suitable manner in one or more embodiments.
- The terms “over,” “to,” “between” and “on” as used herein may refer to a relative position of one layer with respect to other layers. One layer “over” or “on” another layer or bonded “to” another layer may be directly in contact with the other layer or may have one or more intervening layers. One layer “between” layers may be directly in contact with the layers or may have one or more intervening layers.
- Reference is made to
FIGS. 1 and 2 .FIG. 1 is a schematic cross-sectional view of alight emitting diode 100A according to some embodiments of the present disclosure.FIG. 2 is a schematic top view of thelight emitting diode 100A ofFIG. 1 . According to some embodiments of the present disclosure, a light-emitting diode 100A including a firsttype semiconductor layer 110, afirst electrode 150, a secondtype semiconductor layer 130 and asecond electrode 160 is provided. The firsttype semiconductor layer 110 includes a firstlow resistance portion 112, at least one secondlow resistance portion 116, and ahigh resistance portion 114. In some embodiments, thehigh resistance portion 114 is between the firstlow resistance portion 112 and the secondlow resistance portion 116, and thehigh resistance portion 114 defines a shape of the firstlow resistance portion 112. The firstlow resistance portion 112 is enclosed by thehigh resistance portion 114, and a resistivity of the firsttype semiconductor layer 110 increases from the firstlow resistance portion 112 toward thehigh resistance portion 114 and decreases from thehigh resistance portion 114 toward the secondlow resistance portion 116. - In some embodiments, the
first electrode 150 is electrically connected to the firstlow resistance portion 112. There is substantially no current flowing between thefirst electrode 150 and the secondlow resistance portion 116. The “substantially no current” means the current is less than a junction leakage current of the LED under consideration. Specifically, thefirst electrode 150 is in contact with at least a portion of the firstlow resistance portion 112 and at least a portion of thehigh resistance portion 114 and is free from contacting with the secondlow resistance portion 116. - In some embodiments, at least a portion of the first
type semiconductor layer 110 is between thefirst electrode 150 and the secondtype semiconductor layer 130. Thesecond electrode 160 is electrically connected to the secondtype semiconductor layer 130. - In some embodiments, the first
type semiconductor layer 110 is made of a p-type doped semiconductor material, and the secondtype semiconductor layer 130 is made of an n-type semiconductor material. In some embodiments, the firsttype semiconductor layer 110 is made of a p-doped compound such as AlGaN, InGaN, GaN, AlInP, AlInGaP, AlGaAs, GaAs, GaP:Zn—O, or the like. - In the embodiments mentioned above, the
high resistance portion 114 is configured to confine charge carriers substantially within the firstlow resistance portion 112. Specifically, since the resistivity of the firsttype semiconductor layer 110 laterally increases from the firstlow resistance portion 112 toward thehigh resistance portion 114, when thelight emitting diode 100A is biased, charge carriers are apt to flow through the firsttype semiconductor layer 110 via the firstlow resistance portion 112. - In some embodiments,
light emitting diode 100A further includes anactive layer 120 between the firsttype semiconductor layer 110 and the secondtype semiconductor layer 130. - Reference is made to
FIG. 3 .FIG. 3 is a schematic top view of alight emitting diode 100B according to some embodiments of the present disclosure, in which thefirst electrode 150 is omitted for simplicity. It should be pointed out that a difference between thelight emitting diode 100B illustrated inFIG. 3 and thelight emitting diode 100A illustrated inFIG. 2 is that, thehigh resistance portion 114 illustrated inFIG. 2 is surrounded by the secondlow resistance portion 116, while thehigh resistance portion 114 illustrated inFIG. 3 is surrounded by a plurality of the secondlow resistance portions low resistance portions low resistance portions light emitting diode 100B illustrated inFIG. 3 , details which are similar to thelight emitting diode 100A illustrated inFIG. 2 are not repeated to avoid duplicity. - Reference is made to
FIG. 4 .FIG. 4 is a schematic cross-sectional view of alight emitting diode 100C according to some embodiments of the present disclosure. It should be pointed out that a difference between thelight emitting diode 100C illustrated inFIG. 4 and thelight emitting diode 100A illustrated inFIG. 1 is that, thefirst electrode 150 is in contact with at least a portion of the firstlow resistance portion 112 and is free from contacting with thehigh resistance portion 114 and the secondlow resistance portion 116. In thelight emitting diode 100C illustrated inFIG. 4 , details which are similar to thelight emitting diode 100A illustrated inFIG. 1 are not repeated to avoid duplicity. - Reference is made to
FIG. 5 .FIG. 5 is a schematic cross-sectional view of alight emitting diode 100D according to some embodiments of the present disclosure. It should be pointed out that a difference between thelight emitting diode 100D illustrated inFIG. 5 and thelight emitting diode 100A illustrated inFIG. 1 is that, apart from features which has been illustrated in the embodiments supported byFIG. 1 , thelight emitting diode 100D further includes a firstcurrent control layer 140. In some embodiments, at least a portion of the firstcurrent control layer 140 is between thefirst electrode 150 and the firsttype semiconductor layer 110, and the firstcurrent control layer 140 has afirst opening 142 therein. A vertical projection of thefirst opening 142 on a top surface of the firsttype semiconductor layer 110 at least partially overlaps with the firstlow resistance portion 112, and thefirst electrode 150 is electrically connected to the firstlow resistance portion 112 through thefirst opening 142. In some embodiments, at least a portion of the firstcurrent control layer 140 is formed between thefirst electrode 150 and the secondlow resistance portion 116. As shown inFIG. 5 , thefirst electrode 150 and the firstcurrent control layer 140 are further extended outwards over the secondlow resistance portion 116, and thefirst electrode 150 is separated from the secondlow resistance portion 116 by the firstcurrent control layer 140. In thelight emitting diode 100D illustrated inFIG. 5 , details which are similar to thelight emitting diode 100A illustrated inFIG. 1 are not repeated to avoid duplicity. - Reference is made to
FIG. 6 .FIG. 6 is a schematic cross-sectional view of alight emitting diode 100E according to some embodiments of the present disclosure. It should be pointed out that a difference between thelight emitting diode 100E illustrated inFIG. 6 and thelight emitting diode 100D illustrated inFIG. 5 is that, apart from features which has been illustrated in the embodiments supported byFIG. 5 , the firsttype semiconductor layer 110 of thelight emitting diode 100E further includes a thirdlow resistance portion 118 connecting the firstlow resistance portion 112 and the secondlow resistance portion 116, and thehigh resistance portion 114 is separated from theactive layer 120 by the thirdlow resistance portion 118. In these embodiments, the resistivity of the firsttype semiconductor layer 110 increases from the thirdlow resistance portion 118 toward thehigh resistance portion 114. In thelight emitting diode 100E illustrated inFIG. 6 , details which are similar to thelight emitting diode 100D illustrated inFIG. 5 are not repeated to avoid duplicity. In some embodiments, thefirst electrode 150 is in contact with at least a portion of the firstlow resistance portion 112 and is free from contacting with the secondlow resistance portion 116. In some embodiments, thelight emitting diode 100E may have nocurrent control layer 140. - Reference is made to
FIG. 7 .FIG. 7 is a schematic cross-sectional view of alight emitting diode 100F according to some embodiments of the present disclosure. It should be pointed out that a difference between thelight emitting diode 100F illustrated inFIG. 7 and thelight emitting diode 100D illustrated inFIG. 5 is that, apart from features which has been illustrated in the embodiments supported byFIG. 5 , thelight emitting diode 100F further includes a secondcurrent control layer 170. At least a portion of the secondcurrent control layer 170 is between the top surface of the firsttype semiconductor layer 110 and thesecond electrode 160. The secondcurrent control layer 170 has asecond opening 172 therein, and a vertical projection of thesecond opening 172 projected on the top surface of the firsttype semiconductor layer 110 at least partially overlaps with the firstlow resistance portion 112. - In some embodiments as illustrated by
FIG. 7 , a portion of the secondcurrent control layer 170 is between thehigh resistance portion 114 and theactive layer 120, and thecurrent control layer 170 is in contact with theactive layer 120. - In some embodiments as illustrated by
FIG. 7 , the secondcurrent control layer 170 is extended between the secondlow resistance portion 116 and theactive layer 120, and thus the secondlow resistance portion 116 and theactive layer 120 are separated by the secondcurrent control layer 170. - Reference is made to
FIG. 8 .FIG. 8 is a schematic cross-sectional view of alight emitting diode 100G according to some embodiments of the present disclosure. It should be pointed out that a difference between thelight emitting diode 100G illustrated inFIG. 8 and thelight emitting diode 100F illustrated inFIG. 7 is that, the secondcurrent control layer 170 of thelight emitting diode 100F is embedded in the firsttype semiconductor layer 110 and separated from theactive layer 120 by a portion of the firsttype semiconductor layer 110. In thelight emitting diode 100G illustrated inFIG. 8 , details which are similar to thelight emitting diode 100F illustrated inFIG. 7 are not repeated to avoid duplicity. - Reference is made to
FIG. 9A .FIG. 9A is a schematic cross-sectional view of a light emitting diode 100H1 according to some embodiments of the present disclosure. It should be pointed out that a difference between the light emitting diodes 100H1 illustrated inFIG. 9A and thelight emitting diode 100A illustrated inFIG. 1 is that, apart from features which has been illustrated in the embodiments supported byFIG. 1 , the light emitting diode 100H1 further includes acurrent control layer 140 in the firsttype semiconductor layer 110. Thecurrent control layer 140 has anopening 142 therein, and a vertical projection of theopening 142 projected on a top surface of the firsttype semiconductor layer 110 at least partially overlaps with the firstlow resistance portion 112. In some embodiments as illustrated byFIG. 9A , thecurrent control layer 140 is in contact with theactive layer 120. - In some embodiments as illustrated by
FIG. 9A , thefirst electrode 150 is extended outwards over and in contact with the secondlow resistance portion 116. However, there is substantially no current flowing between thefirst electrode 150 and the secondlow resistance portion 116. Furthermore, thecurrent control layer 140 is extended between the secondlow resistance portion 116 and theactive layer 120, and thus the secondlow resistance portion 116 and theactive layer 120 are separated by thecurrent control layer 140. - In some embodiments as illustrated by
FIG. 9A , the light emitting diode 100H1 further includes acurrent control layer 170, and at least a portion of thecurrent control layer 170 is between thesecond electrode 160 and the secondtype semiconductor layer 130. Thecurrent control layer 170 has anopening 172 therein. A vertical projection of theopening 172 projected on a top surface of the firsttype semiconductor layer 110 at least partially overlaps with the firstlow resistance portion 112, and thesecond electrode 160 is electrically connected to the secondtype semiconductor layer 130 through theopening 172. In some embodiments, thecurrent control layer 170 is between the secondtype semiconductor layer 130 and theactive layer 120, and thecurrent control layer 170 is in contact with theactive layer 120. In some embodiments, thecurrent control layer 170 is embedded in the secondtype semiconductor layer 130 and separated from theactive layer 120 by a portion of the secondtype semiconductor layer 130. - Reference is made to
FIG. 9B .FIG. 9B is a schematic cross-sectional view of a light emitting diode 100H2 according to some embodiments of the present disclosure. It should be pointed out that a difference between the light emitting diodes 100H2 illustrated inFIG. 9B and the light emitting diode 100H1 illustrated inFIG. 9A is that, apart from features which has been illustrated in the embodiments supported byFIG. 9A , thecurrent control layer 140 is separated from theactive layer 120 by a portion of the firsttype semiconductor layer 110. That is, thecurrent control layer 140 is embedded in the firsttype semiconductor layer 110 without contacting with theactive layer 120. In some embodiments, at least a portion of thecurrent control layer 170 is between thesecond electrode 160 and the secondtype semiconductor layer 130. In some embodiments, thecurrent control layer 170 is between the secondtype semiconductor layer 130 and theactive layer 120, and thecurrent control layer 170 is in contact with theactive layer 120. In some embodiments, thecurrent control layer 170 is embedded in the secondtype semiconductor layer 130 and separated from theactive layer 120 by a portion of the secondtype semiconductor layer 130. In the light emitting diode 100H2 illustrated inFIG. 9B , details which are similar to the light emitting diode 100H1 illustrated inFIG. 9A are not repeated to avoid duplicity. - Reference is made to
FIG. 10 .FIG. 10 is a schematic cross-sectional view of alight emitting diode 1001 according to some embodiments of the present disclosure. It should be pointed out that a difference between thelight emitting diode 1001 illustrated inFIG. 10 and thelight emitting diode 100D illustrated inFIG. 5 is that, apart from features which has been illustrated in the embodiments supported byFIG. 5 , thelight emitting diode 1001 further includes acurrent control layer 170 in the secondtype semiconductor layer 130, and thecurrent control layer 170 has anopening 172 therein. In addition, a vertical projection of theopening 172 projected on a top surface of the firsttype semiconductor layer 110 at least partially overlaps with the firstlow resistance portion 112. In some embodiments as illustrated byFIG. 10 , thecurrent control layer 170 is in contact with theactive layer 120. - Reference is made to
FIG. 11 .FIG. 11 is a schematic cross-sectional view of alight emitting diode 100J according to some embodiments of the present disclosure. It should be pointed out that a difference between thelight emitting diode 100J illustrated inFIG. 11 and thelight emitting diode 1001 illustrated inFIG. 10 is that, apart from features which has been illustrated in the embodiments supported byFIG. 10 , thecurrent control layer 170 is separated from theactive layer 120 by a portion of the secondtype semiconductor layer 130. That is, thecurrent control layer 170 is embedded in the secondtype semiconductor layer 130 without contacting with theactive layer 120. In some embodiments, thecurrent control layer 170 is between thesecond electrode 160 and the secondtype semiconductor layer 130. In thelight emitting diode 100J illustrated inFIG. 11 , details which are similar to thelight emitting diode 1001 illustrated inFIG. 10 are not repeated to avoid duplicity. - Reference is made to
FIGS. 12 and 13 .FIGS. 12 and 13 are schematic top views of light emittingdiodes first electrode 150 is omitted for simplicity. In some embodiments as illustrated inFIGS. 2 and 3 , the contours of aside wall 117 of thelight emitting diodes side wall 117 may be hexagonal (as illustrated byFIG. 12 ), octagon or quadrilateral (as illustrated byFIG. 13 ), and the shapes should not be restricted herein. - Reference is made to
FIGS. 14 and 15 .FIGS. 14 and 15 are schematic top views of light emittingdiodes first electrode 150 is omitted for simplicity. In some embodiments as illustrated inFIGS. 2 and 3 , the contours of the firstlow resistance portion 112 and thehigh resistance portion 114 are circular, but the disclosure is not limited to these embodiments. In some other embodiments, the contours of the firstlow resistance portion 112 and thehigh resistance portion 114 may be oval (as illustrated byFIG. 14 ), octagonal (as illustrated byFIG. 15 ), or the like, and the shapes should not be restricted herein. The contours of the firstlow resistance portion 112 and thehigh resistance portion 114 may also be different in shapes. - In summary, the high resistance portion is configured to confine charge carriers substantially within the first low resistance portion. Specifically, since the resistivity of the first type semiconductor layer laterally increases from the first low resistance portion toward the high resistance portion, when the light emitting diode is biased, charge carriers are apt to flow through the first type semiconductor layer via the first low resistance portion, therefore improving the luminous efficiency of the light emitting diode.
- Although the present invention has been described in considerable detail with reference to certain embodiments thereof, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims.
Claims (17)
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US15/849,628 US10340307B1 (en) | 2017-12-20 | 2017-12-20 | Light emitting diode having current confinement structure |
CN201810987811.3A CN109950376A (en) | 2017-12-20 | 2018-08-28 | Light emitting diode |
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US15/849,628 US10340307B1 (en) | 2017-12-20 | 2017-12-20 | Light emitting diode having current confinement structure |
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US20210242366A1 (en) * | 2017-02-08 | 2021-08-05 | Seoul Semiconductor Co., Ltd. | Light emitting diode and light emitting module comprising the same |
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FR2386907A1 (en) * | 1977-04-06 | 1978-11-03 | Radiotechnique Compelec | Electroluminescent semiconductor for fibre-optics - has annular quasi isolating region controlling current density in active area of pn junction |
JP3807638B2 (en) * | 1997-01-29 | 2006-08-09 | シャープ株式会社 | Semiconductor light emitting device and manufacturing method thereof |
JP4564234B2 (en) * | 2003-02-17 | 2010-10-20 | 株式会社東芝 | Semiconductor light emitting device |
JP4191566B2 (en) * | 2003-09-12 | 2008-12-03 | アトミック エナジー カウンセル − インスティトゥート オブ ニュークリアー エナジー リサーチ | LIGHT EMITTING DIODE HAVING CURRENT BLOCK STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
KR20130127209A (en) * | 2012-05-14 | 2013-11-22 | 삼성전자주식회사 | Method of manufacturing nitride-gallium-based semiconductor light emitting device |
US9590137B2 (en) * | 2014-05-30 | 2017-03-07 | Mikro Mesa Technology Co., Ltd. | Light-emitting diode |
US10158043B2 (en) * | 2014-05-30 | 2018-12-18 | Mikro Mesa Technolgy Co., Ltd. | Light-emitting diode and method for manufacturing the same |
CN104409595B (en) * | 2014-12-03 | 2017-05-03 | 佛山市国星半导体技术有限公司 | Vertical light emitting diode (LED) with current blocking structures and manufacturing method thereof |
CN105552190B (en) * | 2015-04-30 | 2018-10-09 | 美科米尚技术有限公司 | It is micro-led |
CN105405943A (en) * | 2015-05-21 | 2016-03-16 | 美科米尚技术有限公司 | Micro-light-emitting diode |
US10297719B2 (en) * | 2015-08-27 | 2019-05-21 | Mikro Mesa Technology Co., Ltd. | Micro-light emitting diode (micro-LED) device |
CN106129202B (en) * | 2015-10-04 | 2018-06-12 | 美科米尚技术有限公司 | Light emitting diode and its production method |
US9819152B2 (en) * | 2015-10-07 | 2017-11-14 | National Taiwan University Of Science And Technology | Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer |
CN106711301B (en) * | 2015-11-12 | 2020-10-27 | 美科米尚技术有限公司 | Light emitting diode and manufacturing method thereof |
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US20210242366A1 (en) * | 2017-02-08 | 2021-08-05 | Seoul Semiconductor Co., Ltd. | Light emitting diode and light emitting module comprising the same |
US11804571B2 (en) * | 2017-02-08 | 2023-10-31 | Seoul Semiconductor Co., Ltd. | Light emitting diode and light emitting module comprising the same |
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