US20190172810A1 - Joined structure, joining method, and joining material - Google Patents

Joined structure, joining method, and joining material Download PDF

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Publication number
US20190172810A1
US20190172810A1 US16/199,807 US201816199807A US2019172810A1 US 20190172810 A1 US20190172810 A1 US 20190172810A1 US 201816199807 A US201816199807 A US 201816199807A US 2019172810 A1 US2019172810 A1 US 2019172810A1
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Prior art keywords
joining
spacer
solder material
joined structure
metal
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Takahiro Kumakawa
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. reassignment PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KUMAKAWA, TAKAHIRO
Publication of US20190172810A1 publication Critical patent/US20190172810A1/en
Priority to US16/990,285 priority Critical patent/US12257650B2/en
Abandoned legal-status Critical Current

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    • H01L24/29—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering or brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams or slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/16—Layered products comprising a layer of metal next to a particulate layer
    • H01L24/83—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
    • B32B2264/10—Inorganic particles
    • B32B2264/105—Metal
    • H01L2224/29209—
    • H01L2224/29213—
    • H01L2224/29239—
    • H01L2224/8384—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01321—Manufacture or treatment of die-attach connectors using local deposition
    • H10W72/01323—Manufacture or treatment of die-attach connectors using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07302—Connecting or disconnecting of die-attach connectors using an auxiliary member
    • H10W72/07304—Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07321—Aligning
    • H10W72/07327—Aligning involving guiding structures, e.g. spacers or supporting members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07334—Using a reflow oven
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07352—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the technical field relates to joined structures that may be semiconductor devices, joining methods, and joining materials.
  • the technical field relates to joining methods in which semiconductor devices are joined to certain materials based on metal nanoparticles, and resulting joined structures.
  • the metal nanoparticles are metal particles that have a size smaller than 100 nm, and that may be made of Au, Ag, Cu, Sn, or the like.
  • the metal nanoparticles have high surface activity, and have lower melting points, because of their fine structures. Therefore, the metal nanoparticles make it possible to sinter at lower temperatures (e.g. 150-350° C.)
  • the metal nanoparticles when the metal nanoparticles are joined to one another, thus having larger sizes, the metal nanoparticles have higher melting points that would be almost equal to melting points of ordinary-size metal materials having a millimeter scale thickness or an even larger thickness (hereinafter, referred to as bulk metal materials).
  • the metal nanoparticles are suitable for applications to a wide range of products that require reductions in heat stress caused in mounting of semiconductor devices, and improvements on service temperature limits even after the semiconductor devices are mounted.
  • joining processes based on the metal nanoparticles are carried out based on nanometal pastes that are formed by dispersion of metal nanoparticles, protected by dispersing agents, in solvents.
  • the nanometal pastes are supplied onto first members (e.g. substrates) based on screen printing, use of dispensers, etc., second members (e.g. semiconductor elements) are temporarily immobilized thereon with mounters. Subsequently, the resulting products are preheated to certain temperatures (e.g. 100-150° C.) in high-temperature furnaces, thereby causing solvents in the nanometal pastes to evaporate. Then, the products are heated to sintering temperatures (e.g. 200-300° C.) to progress the sintering process, thereby forming joining layers.
  • first members e.g. substrates
  • second members e.g. semiconductor elements
  • pressurization treatments may be carried out together with the heat treatments during the sintering process in order to form more rigid joining layers.
  • a variety of non-pressurization sintering-type nanometal pastes that realizes sufficient joining strength even without any particular pressurization treatments have been increased, because dispersing agents and solvents included in the nanometal pastes, and materials for the metal nanoparticles have been improved, and compositions for the nanometal pastes have been optimized.
  • FIGS. 3A-3D show a conventional joining method disclosed in JP-A-2011-71301 using metal nanoparticles.
  • a nanometal paste 102 , and spacers 103 a are coated onto a joining surface of a first member 101 , and then, a second member 104 is mounted thereon as shown in FIG. 3B .
  • a resulting product is heated to a temperature that causes solvents contained in the nanometal paste 102 to evaporate, in a high-temperature furnace, thereby removing the solvents (not shown in the figure).
  • a volumetric shrinkage of the nanometal paste 102 will occur due to evaporation of the solvents.
  • spacers 103 a serve as propping bars, and, consequently, spaces equivalent to the volumetric shrinkage are produced between the nanometal paste 102 and the second member 104 .
  • the product is pressurized at a pressure causing plastic deformation of the spacer 103 b, with a pressure device 106 , the product is heated to a temperature that achieves sintering of metal nanoparticles, in a high-temperature furnace 105 .
  • the sintering process is progressed to form a joined structure 200 .
  • an object of the disclosure is to solve the above-described problems in the conventional art. That is, an object of the disclosure is to provide joining materials having high precision of thickness of joining layers, joining methods, and joined structures.
  • a joined structure including: a first member; and a second member that faces the first member and that is joined to the first member via a joining layer, wherein the joining layer includes a metal material and a solder material, a part of the metal material has at least one pore, and the solder material is located in a part of an internal area of the at least one pore.
  • a joining method including: (i) supplying, onto a first surface of a first member, a nanometal paste at least including metal nanoparticles and a solvent, and a spacer; (ii) facing a second member to the first member, and pushing the second member onto the spacer, to mount the second member over the first member; (iii) heating a product obtained in Step (ii) at a temperature equal to or lower than a temperature where the solvent in the nanometal paste is evaporated, to cause the spacer to melt or decompose; (iv) heating the product resulting from Step (iii) at the temperature where the solvent in the nanometal paste is evaporated; and (v) heating the product resulting from Step (iv) at a temperature where the metal nanoparticles are sintered.
  • a nanometal paste joining material including metal nanoparticles, a solvent, and a spacer that is melted or decomposed at a temperature lower than a boiling point of the solvent.
  • the spacers are never melted or decomposed before the step of evaporation of solvents in the nanometal paste, and thus, subduction of the first member relative to the second member in association of the volumetric shrinkage caused during the evaporation of solvents or the progress of the sintering process is never impeded.
  • any equipment involving control of high pressurization within a high-temperature atmosphere is not required, and also, it becomes possible to carryout a sintering treatment to multiple joined structures based on high-temperature furnace, at the same time.
  • the disclosure can provide cost-effective production processes.
  • thermal conductivity can locally be increased around such pores, compared with hollow states.
  • parts of the sintered metal, and the solder material, which serves as a material for the spacers form an alloy, and thus, the formed alloy has a melting point higher than the solder material serving as the material for the spacers before the melting process. Therefore, remelting of the material can be prevented in the joined structure.
  • FIGS. 1A-1F are flowchart diagrams showing steps in a joining method according to a present embodiment.
  • FIG. 2 is a cross-section view showing a state of a joining layer in a present embodiment.
  • FIG. 3A-3D flowchart diagrams showing steps in the conventional joining method disclosed in JP-A-2011-71301.
  • FIGS. 1A-1F are flowchart diagrams showing steps in a joining method according to a present embodiment
  • a nanometal paste 2 , and spacers 3 a are supplied onto a joining surface (top surface) of a first member 1 .
  • the nanometal paste 2 has a composition including a solvent, and metal nanoparticles that are protected by a dispersing agent and that are dispersed in the solvent.
  • the first member 1 may be a printed wiring substrate, a ceramic wiring substrate, a heat releasing substrate having high thermal conductivity, or the like.
  • a method for supplying the paste onto the first member 1 a method in which the nanometal paste 2 including spacers 3 a is supplied thereon based on screen printing or by using a dispenser can be mentioned.
  • shapes of the spacers 3 a may preferably be spherical. Otherwise, it would become very difficult to control orientations of the spacers 3 a when the nanometal paste 2 is supplied onto the first member 1 .
  • the joining surface of the first member 1 used in present embodiments may preferably be formed of a Cu solid material.
  • the joining surface may preferably be Ag- or Au-plated, because such a joining surface realizes excellent bondability with respect to metal nanoparticles.
  • spacers 3 a may preferably be spherical in present embodiments as mentioned above, the spacers 3 a may be wire- or foil-shaped in cases in which a nanometal paste 2 , and the spacers 3 a are separately supplied onto the first member 1 . In that case, the wire- or foil-shaped spacers 3 a may be placed onto the first member 1 , and then, the nanometal paste 2 may be coated thereon.
  • columnar solder-plated objects serving as spacers 3 a are formed on the first member 1 in advance, and then, the nanometal paste 2 may be supplied thereto.
  • metal particles (metal nanoparticles) with a mean particle diameter from about 0.5 nm to about 100 nm may be employed.
  • NPG-J manufactured by Harima Chemicals Group, Inc. (particle size: 3-7 nm) can be mentioned.
  • the metal nanoparticles may be made of a mono-element metal such as Ag, Au, Cu or Sn, or a multi-element metal such as SnAg, SnSb, or AuSn.
  • metal particles with a particle size of 100 nm or more may be mixed into the nanometal paste 2 , together with the metal nanoparticles.
  • terpineol for a solvent contained in the nanometal paste 2 , terpineol, decanol, tetradecane, toluene, decalin, and the like can be employed.
  • solder materials having a melting point equal to or lower than a boiling point of the solvent contained in the nanometal paste 2 may preferably be employed.
  • solder materials having a melting point equal to or lower than a boiling point of the solvent contained in the nanometal paste 2 may preferably be employed.
  • an SnZn-type solder having a melting point from about 190° C. to about 200° C. may be employed.
  • decalin which has a boiling point of about 186° C.
  • decalin which has a boiling point of about 186° C.
  • an SnIn-type solder having a melting point of about 120° C. may be employed.
  • a BiIn-type solder having a melting point of about 70° C. may preferably be employed.
  • thermoplastic resin materials, or rubbers that are decomposed at a temperature equal to or lower than a boiling point of the solvent contained in the nanometal paste 2 may be employed instead of solders.
  • a second member 4 is mounted onto the first member 1 via the nanometal paste 2 .
  • the second member 4 may be a semiconductor element.
  • the second member 4 When the second member 4 is mounted thereon, the second member 4 is pushed onto the first member 1 such that the second member 4 is brought into contact with the spacers 3 a.
  • a device used for mounting the second member 4 onto the first member a high degree of accuracy of the positional control in the mounting height direction is not required since the level can be adjusted only based on pressure control.
  • an area between the second member 4 and the first member 1 is not pressurized.
  • the product is heated in a high-temperature furnace 5 or the like, and thus, the spacers 3 a are melted at a temperature where the solvent in the nanometal paste 2 is not evaporated, thereby forming spacers 3 b in a molten state.
  • an Sn58Bi solder having a melting point of around 140° C., and an Sn49In solder having a melting point of around 120° C. may preferably be employed for materials for the spacers.
  • solder materials As other types of solder materials, ternary solder materials such as SnBiIn and the like can be employed.
  • the spacers 3 b are melted, the spacers 3 b do not almost spread to the peripheries.
  • Wettability of the spacers 3 b is different from wettability of surrounding materials, and therefore, the spacers 3 b do not substantially spread thereto.
  • the product is heated to a temperature where the solvent contained in the nanometal paste 2 is evaporated, and thus, an amount of the solvent is reduced.
  • the reductions in the volume of the nanometal paste 2 in this step is determined almost depending on a blending ratio of the solvent in the nanometal paste 2 , and the metal nanoparticles, and may typically be about 30% to about 50%.
  • the size is preferably about 200% to about 285% of the volume of the joining layer 8 ( FIG. 1F ) in the produced joined structure, in consideration of shrinkages of the spacers 3 a due to the pressure caused when the second member 4 is mounted onto the first member 1 .
  • the product is heated to a temperature where the dispersing agent in the nanometal paste 2 is removed and where the metal nanoparticles are sintered, and is further allowed to stand at such a temperature until the sintering process is sufficiently progressed, thereby forming a sintered metal 7 mainly containing a rigid bulk metal.
  • Heating device used in the disclosure is not particularly limited to a high-temperature furnace.
  • FIG. 2 is a cross-section of the prepared joined structure 300 .
  • the joining layer 8 is formed by a sintered metal 7 that is formed through sintering of metal nanoparticles, a porous state 9 that is caused as a space that is caused because insufficient linkage of parts of metal nanoparticles during the sintering process, or a pore that is formed as a remining route, through which gases of the remained solvent or dispersing agent had passed, spacers 3 c, that had been melted and then resolidified, and an alloy 10 including a sintered metal 7 and spacers 3 c.
  • the resolidified spacers 3 c are filled within some of pores.
  • the above-mentioned paces and pores are small, and therefore, do not cause any adverse effects on bondability between the first member 1 and the second member 4 .
  • the alloy 10 may not be formed depending on types of elements in the sintered metal and spacers.
  • any spacers 3 c may not be present in some of the pores.
  • the sintered metal 7 is Ag
  • the material for the spacers 3 c is a 67In-33Bi solder having a melting point of about 73° C.
  • an AgBi alloy or the like having a melting point of about 262° C. is formed as the alloy 10 .
  • the melting point of the spacer 3 c which originally had a lower melting point, is shifted toward a higher temperature region, and thus, it becomes possible to prevent the jointed structure from remelting even when the resulting joined structure is subjected to a heat treatment or the like.
  • an AgBi alloy having a melting point of about 262° C. or higher, an AgSn alloy having a melting point of about 221° C. or higher, or the like may be formed as an alloy 10 .
  • a binary solder material such as SnIn
  • multielement solder materials such as SnBiIn
  • first member 1 and the second member 4 can be joined without causing any large spaces.
  • solder material (spacers 3 c ) and/or an alloy 10 are locally and continuously located throughout an area from the first member 1 to the second member 4 in the joined structure 300 , as a result of the above process.
  • the disclosure is suitable for joining processes for production of high-heat-generating semiconductor devices requiring high heat resistance and heat releasing properties (e.g. power semiconductor devices and super luminosity LEDs).

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  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Die Bonding (AREA)
  • Powder Metallurgy (AREA)
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US12257650B2 (en) 2025-03-25
CN109874236B (zh) 2021-10-15

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