US20180370793A1 - Manufacturing Method of Mems Sensor - Google Patents
Manufacturing Method of Mems Sensor Download PDFInfo
- Publication number
- US20180370793A1 US20180370793A1 US15/918,502 US201815918502A US2018370793A1 US 20180370793 A1 US20180370793 A1 US 20180370793A1 US 201815918502 A US201815918502 A US 201815918502A US 2018370793 A1 US2018370793 A1 US 2018370793A1
- Authority
- US
- United States
- Prior art keywords
- layer
- ion beam
- hole
- focused ion
- mems sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 72
- 238000007789 sealing Methods 0.000 claims abstract description 113
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000001678 irradiating effect Effects 0.000 claims abstract description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 abstract description 21
- 238000000034 method Methods 0.000 description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 60
- 229910052814 silicon oxide Inorganic materials 0.000 description 54
- 238000012986 modification Methods 0.000 description 27
- 230000004048 modification Effects 0.000 description 27
- 238000000151 deposition Methods 0.000 description 18
- 230000008021 deposition Effects 0.000 description 16
- 230000006378 damage Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- -1 gallium ions Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00817—Avoid thermal destruction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2406—Electrostatic or capacitive probes, e.g. electret or cMUT-probes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0315—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/0143—Focussed beam, i.e. laser, ion or e-beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0145—Hermetically sealing an opening in the lid
Definitions
- the present invention relates to a manufacturing method of a MEMS sensor.
- MEMS Micro Electro Mechanical System
- FIB focused ion beam
- Patent Document 1 discloses a technique in which a micro-sampling piece is extracted and a corresponding sampling hole formed in a semiconductor wafer is repaired by use of a focused ion beam.
- a MEMS sensor such as an ultrasonic sensor
- a focused ion beam when a cavity formed between an upper electrode and a lower electrode is sealed by a focused ion beam, the number of sealing spots is large (a total sealing volume is large), thereby causing a longer manufacturing time.
- Japanese Patent Application Laid-Open Publication No. 2009-4591 does not describe structural destruction by heat, and describes only the method of filling up a single hole without describing a method of efficiently filling up a plurality of holes.
- An object of the present invention is to provide a technique in which, in manufacture of a MEMS sensor, a TAT can be shortened and thermal destruction of the MEMS sensor can be prevented.
- a manufacturing method of a MEMS sensor includes the steps of:
- step (b) after the step (a), by irradiating the first hole with a focused ion beam for a first predetermined time, forming a first sealing film that seals the first hole on the first hole;
- each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and the step (b) and the step (c) are performed repeatedly.
- a manufacturing method of a MEMS sensor includes the step of:
- the predetermined beam current density is a beam current density at which thermal equilibrium of the second layer is maintainable, and the plurality of sealing films are formed simultaneously.
- a manufacturing method of a MEMS sensor includes the steps of:
- step (b) after the step (a), by irradiating a first hole formation spot of the second layer with a focused ion beam for a first predetermined time, forming a first hole in the second layer such that the first hole reaches the third layer;
- step (c) after the step (b), by irradiating a second hole formation spot of the second layer with a focused ion beam for a second predetermined time, forming a second hole in the second layer such that the second hole reaches the third layer;
- step (d) after the step (c), removing the third layer through the first hole and the second hole and then forming a cavity between the first layer and the second layer in such a way as to communicate with the first hole and the second hole;
- Each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and before the step (d), the step (b) and the step (c) are performed repeatedly.
- the TAT In manufacture of a MEMS sensor, the TAT can be shortened, and thermal destruction of the MEMS sensor can be prevented.
- FIG. 1 is a plan view of a principle portion of a MEMS sensor according to a first embodiment of the present invention
- FIG. 2 is a cross-sectional view of a structure taken along a line A-A of FIG. 1 ;
- FIG. 3 is a schematic diagram of a focused ion beam device used in the first embodiment
- FIG. 4 is a graph indicating a relation between a sealed number and a manufacturing time, which has been studied by the inventors;
- FIG. 5 is a graph indicating a relation between a beam current density and a temperature increase during a film-forming process, which has been studied by the inventors;
- FIG. 6 is a graph indicating a relation between an ion beam irradiation time and a temperature increase, which has been studied by the inventors;
- FIG. 7 is a graph indicating a relation between an ion beam irradiation time and a beam current density according to a manufacturing method of the MEMS sensor of the first embodiment
- FIG. 8 is a graph indicating a relation between an ion beam irradiation time and a beam current density according to a first modification example of the manufacturing method of the MEMS sensor of the first embodiment
- FIG. 9 is a graph indicating a manufacturing time taken by each manufacturing method of the MEMS sensor according to the first embodiment.
- FIG. 10 is a cross-sectional view of a structure of a principle portion of a MEMS sensor according to a second modification example of the first embodiment
- FIG. 11 is a cross-sectional view of a structure of a principle portion of a MEMS sensor according to a third modification example of the first embodiment before a sealing process;
- FIG. 12 is a cross-sectional view of the structure of the principle portion of the MEMS sensor according to the third modification example of the first embodiment after the sealing process;
- FIG. 13 is a schematic diagram of a structure of a focused ion beam device according to a fourth modification example of the first embodiment
- FIG. 14 is a plan view showing a method of using a projection mask in the focused ion beam device of FIG. 13 ;
- FIG. 15 is a schematic diagram of a structure of a sampling stage in a focused ion beam device according to a fifth modification example of the first embodiment
- FIG. 16 is a cross-sectional view of a principle portion in a base forming process in a manufacturing method of a MEMS sensor according to a second embodiment of the present invention.
- FIG. 17 is a cross-sectional view of a principle portion in a hole forming process in the manufacturing method of the MEMS sensor according to the second embodiment of the present invention.
- FIG. 18 is a cross-sectional view of a principle portion in a sacrifice layer removing process in the manufacturing method of the MEMS sensor according to the second embodiment of the present invention.
- FIG. 19 is a cross-sectional view of a principle portion in a sealing process in the manufacturing method of the MEMS sensor according to the second embodiment of the present invention.
- FIG. 1 is a plan view of a principle portion of a MEMS sensor according to a first embodiment of the present invention.
- FIG. 2 is a cross-sectional view of a structure taken along a line A-A of FIG. 1 .
- An ultrasonic sensor (MEMS sensor) 4 is a capacitive micro-machined ultrasonic transducer (CMUT) to which a semiconductor technique is applied.
- CMUT capacitive micro-machined ultrasonic transducer
- the ultrasonic sensor 4 of the first embodiment shown in FIGS. 1 and 2 is manufactured on a substrate such as a semiconductor substrate 1 by patterning a plurality of micro sensors by lithography.
- Each micro sensor is structured such that a cavity 8 having a vacuum atmosphere is formed in an insulating layer, with electrodes being formed below and above the cavity 8 .
- an electrostatic force is applied between these electrodes to cause an electrode film to vibrate, thereby transmitting an ultrasonic signal.
- the micro sensor Upon receiving a signal, the micro sensor converts a displacement amount of the electrode film into a change in capacitance to detect a signal.
- a plurality of micro sensors each made into hexagon in a plan view are disposed in the insulating layer on the semiconductor substrate 1 to spread across the insulating layer.
- each ultrasonic sensor 4 has a silicon oxide film (SiO 2 film) 9 which is the insulating layer formed on the semiconductor substrate 1 and composed of a first layer and a second layer.
- a silicon oxide film (SiO 2 film) 9 a serving as the first layer is formed on the semiconductor substrate 1
- a silicon oxide film (SiO 2 film) 9 b serving as the second layer is formed on the silicon oxide film 9 a via the cavity 8 .
- a lower electrode (first electrode) 6 is formed in the silicon oxide film 9 b.
- an upper electrode (second electrode) 7 having a hexagonal shape in a plan view is formed.
- the ultrasonic sensor 4 includes a plurality of the lower electrodes 6 and a plurality of the upper electrodes 7 that are disposed opposite to each other with a plurality of the cavities 8 interposed therebetween in a film thickness direction.
- each pair of upper electrodes 7 adjacent to each other are electrically connected through a wiring 2 , so that one upper electrode 7 and another upper electrode 7 distant therefrom are also electrically connected through any of the wirings 2 .
- the cavity 8 formed between the lower electrode 6 and the upper electrode 7 has a plurality of holes 3 formed therein in such a way as to communicate with the cavity 8 .
- a first hole 3 a communicating with the cavity 8 is formed, and similarly, a second hole 3 b communicating with the cavity 8 is formed in the silicon oxide film 9 b on an opposite side to the first hole 3 a.
- a sealing film 5 which seals each of the plurality of holes 3 is formed on an opening which opens in a front surface of the silicon oxide film 9 b of each of the holes 3 .
- the opening of the first hole 3 a which opens in the front surface of the silicon oxide film 9 b is covered with a first sealing film 5 a formed to seal the first hole 3 a
- the opening of the second hole 3 b which opens in the front surface of the silicon oxide film 9 b is covered with a second sealing film 5 b formed to seal the second hole 3 b.
- the upper electrode 7 is formed into a hexagon in a plan view, and the cavity 8 corresponding to the upper electrode 7 is also formed into a hexagon in a plan view.
- the holes 3 each communicating with the cavity 8 are formed at locations close to the six corners of the hexagonal upper electrode 7 , respectively.
- the plurality of sealing films 5 are also formed at locations close to the six corners of the hexagonal upper electrode 7 , respectively.
- each of the holes 3 and each of the sealing films 5 sealing each hole 3 are provided on a diagonal line L of the hexagonal upper electrode 7 .
- the sealing film 5 such as the first sealing film 5 a and the second sealing film 5 b is a film deposited by a focused ion beam (FIB), which will be described later.
- FIB focused ion beam
- the plurality of ultrasonic sensors 4 which are the plurality of micro sensors, are formed on the semiconductor substrate 1 .
- Each of the ultrasonic sensors 4 has the plurality of holes 3 and the plurality of sealing films 5 sealing the corresponding holes 3 .
- FIG. 3 is a schematic diagram of the focused ion beam device used in the first embodiment to form the sealing film 5 .
- a focused ion beam device 20 shown FIG. 3 includes a vacuum chamber (not shown) in which a focused ion beam 21 is emitted onto a sample (a substrate such as the semiconductor substrate 1 ) 26 .
- the vacuum chamber houses an ion source 22 that discharges gallium ions, an aperture 23 and a condenser lens 24 that condense an ion beam, an objective lens 25 that focuses the ion beam on a front surface of the sample 26 , and a sample stage 27 holding the sample 26 .
- the ion beam which is condensed and focused on the front surface of the sample 26 is emitted onto the front surface of the sample 26 to process the sample 26 .
- FIG. 4 is a graph indicating a relation between a sealed number and a manufacturing time, which has been studied by the inventors.
- FIG. 5 is a graph indicating a relation between a beam current density and a temperature increase during a film-forming process, which has been studied by the inventors.
- FIG. 6 is a graph indicating a relation between an ion beam irradiation time and a temperature increase, which has been studied by the inventors.
- FIG. 4 is a graph indicating temperature increases during a film-forming process using focused ion beams having three types of beam current densities, in terms of the relation between the sealed number and the manufacturing time.
- Three types of beam current densities include, for example, 15 nA/ ⁇ m 2 , 30 nA/ ⁇ m 2 , and 100 nA/ ⁇ m 2 .
- the beam current density of 15 nA/ ⁇ m 2 does not cause thermal structural destruction (a curve marked with OK in FIG. 4 ).
- the beam current densities of 30 nA/ ⁇ m 2 and 100 nA/ ⁇ m 2 cause thermal structural destruction (curves marked with NG in FIG. 4 ).
- a test cell has about 17,280 sealing spots, and one semiconductor chip has about 331,776 sealing spots, which means the number of sealing spots is significantly large.
- the curve representing the beam current density of 15 nA/ ⁇ m 2 that does not cause thermal structural destruction (OK) defines a manufacturing time for 17,280 sealing spots of the test cell as 144 hours, which is a long manufacturing time to take.
- FIG. 5 is a graph indicating the relation between a beam current density and a temperature increase during the film-forming process for the case of the MEMS sensor having the cavity and the case of the MEMS sensor having no cavity.
- FIG. 5 indicates that, when the beam current density is 15 nA/ ⁇ m 2 , a temperature increase in each case of the MEMS sensor having the cavity and the MEMS sensor having no cavity is lower than 1600° C., which is the melting point of the silicon oxide film, and in both cases, thermal destruction of the MEMS sensors does not occur (OK).
- the temperature increase of the MEMS sensor having no cavity does not reach 1600° C., while the temperature increase of the MEMS sensor having the cavity significantly exceed 1600° C., which is indicated as NG in the graph.
- the cavity prevents heat conduction through the MESE sensor to slow down heat conduction, resulting in faster temperature increase and high temperature.
- heat conduction through the MEMS sensor is not prevented and performed faster, resulting in slow temperature increase and low temperature.
- FIG. 6 is a graph indicating the relation between an irradiation time and a temperature increase for each beam current density.
- the temperature increase saturates in a low-temperature range below 1600° C.
- the beam current density of 30 nA/ ⁇ m 2 curve B
- beam current densities of 100 nA/ ⁇ m 2 curve C
- 1 ⁇ A/ ⁇ m 2 curve D
- 10 ⁇ A/ ⁇ m 2 curve E
- the focused ion beam 21 is emitted under a condition defined in a range F of FIG. 6 (hatched range where a temperature increase is low). Specifically, the range F where the temperature of the MEMS sensor does not reach 1600° C. by applying a beam having a large beam current density for a short time is used.
- FIG. 7 is a graph indicating a relation between an ion beam irradiation time and a beam current density.
- the focused ion beam 21 is emitted onto sealing spots P and Q repeatedly to deposit thereon.
- the current density of the focused ion beam 21 is made larger, and the application time of the focused ion beam 21 is made shorter at each round of beam irradiation.
- the semiconductor substrate 1 is prepared first, the semiconductor substrate 1 including the first hole 3 a and the second hole 3 b that are formed in the silicon oxide film 9 b such that they communicate with the cavity 8 formed between the lower electrode 6 and the upper electrode 7 on the semiconductor substrate 1 shown in FIG. 2 .
- the focused ion beam device 20 shown in FIG. 3 irradiates the first hole 3 a of the semiconductor substrate 1 with the focused ion beam 21 for a first predetermined time.
- This process forms the first sealing film 5 a, which seals the first hole 3 a, on the first hole 3 a.
- This is equivalent to the first sealing spot P shown in FIG. 7 , for example.
- the focused ion beam device 20 shown in FIG. 3 irradiates the second hole 3 b shown in FIG. 2 with the focused ion beam 21 for a second predetermined time in the same manner.
- This process forms the second sealing film 5 b, which seals the second hole 3 b, on the second hole 3 b. This is equivalent to the deposition on the second sealing spot Q, which is performed after the deposition on the first sealing spot P shown in FIG. 7 .
- each of the first predetermined time and the second predetermined time is the time in which thermal equilibrium of the silicon oxide film 9 b can be maintained, that is, the ion beam irradiation time to such an extent that the silicon oxide film 9 b is not destroyed by heat.
- each of the first predetermined time and the second predetermined time is the irradiation time of the focused ion beam 21 that prevents the temperature of the silicon oxide film 9 b upon irradiation with the focused ion beam from reaching 1600° C. (that keeps the temperature of the silicon oxide film 9 b below 1600° C.), which is the melting point of the silicon oxide film 9 b.
- film formation is performed in the range F shown in FIG. 6 .
- the current density of the focused ion beam 21 is 10 ⁇ A/ ⁇ m 2
- the beam irradiation time which is equivalent to each of the first predetermined time and the second predetermined time, is about 1E-8 (sec.) (E: exponential function).
- an ion beam having a large beam current density is applied to a sealing spot for a short time, and this irradiation process is repeatedly performed in order on a plurality of sealing spots.
- high-rate deposition is performed using the range in which there is no temperature increase of the silicon oxide film 9 b (range F in FIG. 6 ), for example.
- FIG. 8 is a graph indicating a relation between an ion beam irradiation time and a beam current density according to a first modification example of the manufacturing method of the MEMS sensor of the first embodiment. This graph indicates the relation between the irradiation time and the current density of the focused ion beam 21 which forms one sealing film 5 sealing one hole 3 .
- the plurality of sealing films 5 respectively sealing the plurality of holes 3 are formed on the plurality of holes 3 , respectively.
- the plurality of sealing films are formed simultaneously on the plurality of holes 3 , respectively. That is, the plurality of sealing films 5 are formed all at once.
- each of the plurality of holes 3 is irradiated simultaneously with the focused ion beam 21 at the current density and for the irradiation time indicated in FIG. 8 .
- a plurality of openings corresponding to the plurality of holes 3 are formed in a mask serving as the aperture 23 so as to allow the focused ion beam 21 to pass through each of the openings.
- the focused ion beam 21 can be simultaneously emitted onto the plurality of holes 3 .
- the above predetermined beam current density set in the first modification example is the beam current density at which the thermal equilibrium of the silicon oxide film 9 b can be maintained. That is, in the range shown in FIG. 6 where the temperature of the silicon oxide film 9 b does not reach the melting point of 1600° C. (thermal equilibrium range, i.e., the range of beam current density in which the temperature of the silicon oxide film 9 b is below 1600° C.), the focused ion beam 21 having a low current density (e.g., 15 nA/ ⁇ m 2 ) is emitted simultaneously onto the plurality of holes 3 (continuously) for a long time, as indicated in FIG. 8 (parallel deposition).
- the focused ion beam 21 having a low current density e.g. 15 nA/ ⁇ m 2
- irradiation with the ion beam having a low current density simultaneously forms the plurality of sealing films 5 , and as a result, in the manufacture of the MEMS sensor (ultrasonic sensor 4 ), thermal destruction of the MEMS sensor can be prevented, and the TAT is shortened, so that the MEMS sensor can be manufactured efficiently.
- FIG. 9 is a graph indicating a manufacturing time taken by each manufacturing method of the MEMS sensor according to the first embodiment. That is, the graph indicates the results of comparison of the MEMS sensor manufacturing times taken by respective manufacturing methods.
- “study technique” indicates a MEMS sensor manufacturing time in the case of forming the plurality of (predetermined number of) sealing films 5 by adopting the beam current density of 15 nA/ ⁇ m 2 (curve A) indicated in FIG. 6 .
- the manufacturing time is 144 hours.
- “Short time deposition” in FIG. 9 is the case of adopting the method described with reference to FIG. 7 , and in this method, an ion beam having a large beam current density is emitted onto a sealing spot for a short time and this irradiation process is repeatedly performed in order on a plurality of sealing spots to perform deposition.
- the MEMS sensor manufacturing time is 0.35 hour, and the manufacturing time can be reduced to 1/411 of the manufacturing time taken by the “study technique.” That is, adopting the “short time deposition” method reduces the TAT, so that the MEMS sensor can be manufactured efficiently.
- “parallel deposition” in FIG. 9 indicates the case of adopting the method described with reference to FIG. 8 , and in this method, an ion beam having a low beam current density is emitted simultaneously onto a plurality of sealing spots continuously (for a long time) to form the plurality of sealing films 5 all at once.
- the MEMS sensor manufacturing time is 0.6 hour, and the manufacturing time can be reduced to 1/240 of the manufacturing time taken by the “study technique.” That is, adopting the “parallel deposition” method also reduces the TAT, so that the MEMS sensor can be manufactured efficiently, as in the case of adopting the “short time deposition” method.
- the manufacturing time indicated by “parallel deposition” in FIG. 9 is the manufacturing time taken when, for example, about 240 sealing films 5 are formed in a 800 ⁇ m ⁇ 800 ⁇ m area.
- FIG. 10 is a cross-sectional view of a structure of a principle portion of a MEMS sensor according to the second modification example of the first embodiment.
- a silicon nitride film (SiN film) 10 which is denser than the silicon oxide film 9 shown in FIG. 2 , is formed as an insulating film formed on the semiconductor substrate 1 .
- the MEMS sensor of the second modification example includes a silicon nitride film (an SiN film or the first layer) 10 a formed on the semiconductor substrate 1 , and a silicon nitride film (an SiN film or the second layer) 10 b formed on the silicon nitride film 10 a.
- the silicon nitride film 10 a has the lower electrode 6 formed therein
- the silicon nitride film 10 b has the upper electrode 7 , the first hole 3 a, and the second hole 3 b formed therein.
- each of the first sealing film 5 a and the second sealing film 5 b formed on each hole 3 is a film containing a metal.
- each of the first sealing film 5 a and the second sealing film 5 b includes the silicon oxide film 9 or the silicon nitride film 10 , and a metal film 11 covering the silicon oxide film 9 or the silicon nitride film 10 .
- the hole 3 is sealed with the silicon oxide film 9 or the silicon nitride film 10
- the silicon oxide film 9 or the silicon nitride film 10 is covered with the metal film 11 .
- the metal film 11 is, for example, a tungsten film.
- the silicon nitride film 10 is adopted as the insulating film formed on the semiconductor substrate 1 , and the sealing film 5 sealing the hole 3 is partially made of the metal film 11 , so that penetration of moisture from outside can be prevented.
- reliability of the MEMS sensor (ultrasonic sensor 4 ) can be improved.
- FIG. 11 is a cross-sectional view of a structure of a principle portion of a MEMS sensor according to the third modification example of the first embodiment before the sealing process.
- FIG. 12 is a cross-sectional view of the structure of the principle portion of the MEMS sensor according to the third modification example of the first embodiment after the sealing process.
- an inner pressure of the cavity 8 is controlled when the cavity 8 is sealed up with the sealing films 5 .
- the inner pressure of the chamber (not shown) of the focused ion beam device 20 shown in FIG. 3 is controlled by controlling a flow rate of a gas supplied into the chamber.
- a sealing pressure of the first sealing film 5 a and the second sealing film 5 b to be formed, shown in FIG. 12 is controlled.
- the above gas may be a gas used for film forming or may be an inert gas supplied into the chamber.
- the flow rate of the gas supplied into the chamber is controlled before the sealing process to control the inner pressure of the cavity 8 as well as an external pressure to the MEMS sensor, to 10 Pa, which is equal to a pressure at film formation.
- the sealing process is performed under this condition, that is, the first sealing film 5 a and the second sealing film 5 b are formed.
- the inner pressure of the cavity 8 can be controlled to 10 Pa.
- Controlling the inner pressure of the cavity 8 in this manner improves a performance of the MEMS sensor.
- the inner pressure of the cavity 8 is, for example, related to a quality factor. For this reason, controlling the inner pressure of the cavity 8 is important to improve the performance of the MEMS sensor.
- FIG. 13 is a schematic diagram of a structure of a focused ion beam device according to the fourth modification example of the first embodiment.
- FIG. 14 is a plan view showing a method of using a projection mask in the focused ion beam device of FIG. 13 .
- a focused ion beam device 28 shown in FIG. 13 includes a mask having a double-layer structure composed of a first mask and a second mask. Specifically, this focused ion beam device 28 is provided with a first projection mask (first mask) 12 and a second projection mask (second mask) 13 which are stacked one on top of another, in place of the aperture 23 shown in FIG. 3 .
- the first projection mask 12 has a plurality of first openings 12 a formed in such a way as to correspond to respective locations of the holes 3 to be formed, shown in FIG. 2
- the second projection mask 13 has a plurality of second openings 13 a formed in the same manner as the first openings 12 a.
- the first openings 12 a and the second openings 13 a are slightly shifted in position to each other.
- the plurality of first openings 12 a of the first projection mask 12 are overlapped with the plurality of second openings 13 a of the second projection mask 13 to form a plurality of third openings 14 (hatched portions), through which the ion beam passes to be condensed, as shown in FIG. 14 .
- Overlapping the first openings 12 a of the first projection mask 12 with the second openings 13 a of the second projection mask 13 can form the third openings 14 each smaller in area than each of the first openings 12 a and the second openings 13 a.
- causing the ion beam to pass through the third opening 14 can make a beam diameter of the focused ion beam 21 smaller.
- FIG. 15 is a schematic diagram of a structure of a sampling stage in a focused ion beam device according to the fifth modification example of the first embodiment.
- a substrate holding surface 27 a of the sample stage 27 shown in FIG. 15 is tilted at an angle ⁇ relative to a horizontal direction X.
- FIG. 16 is a cross-sectional view of a principle portion in a base forming process in a manufacturing method of a MEMS sensor according to a second embodiment of the present invention.
- FIG. 17 is a cross-sectional view of a principle portion in a hole forming process in the manufacturing method of the MEMS sensor according to the second embodiment of the present invention.
- FIG. 18 is a cross-sectional view of a principle portion in a sacrifice layer removing process in the manufacturing method of the MEMS sensor according to the second embodiment of the present invention.
- FIG. 19 is a cross-sectional view of a principle portion in a sealing process in the manufacturing method of the MEMS sensor according to the second embodiment of the present invention.
- a silicon oxide film (a first layer) 9 a, a silicon oxide film (a second layer) 9 b on the silicon oxide film 9 a, and a sacrifice layer 15 (a third layer) between the silicon oxide film 9 a and the silicon oxide film 9 b are formed on a semiconductor substrate 1 .
- the silicon oxide film (the first layer) 9 a is formed as an insulating layer on the semiconductor substrate 1 , and a lower electrode 6 is further formed on the silicon oxide film 9 a.
- a lower electrode 6 is further formed on the silicon oxide film 9 a.
- another silicon oxide film 9 a is formed. Accordingly, a structure in which the lower electrode 6 is formed in the silicon oxide film 9 a is provided.
- the sacrifice layer 15 is further formed on an upper layer of the silicon oxide film 9 a on the lower electrode 6 .
- the sacrifice layer 15 is preferably a metal film made of, for example, titanium, tungsten, or molybdenum. Forming the sacrifice layer 15 with the metal film allows for highly precise formation of a cavity 8 (see FIG. 18 ) in a subsequent process where the cavity 8 is formed by removing the sacrifice layer 15 .
- the silicon oxide film (second layer) 9 b serving as the insulating layer is formed on the sacrifice layer 15 , and an upper electrode 7 is further formed on the silicon oxide film 9 b.
- Another silicon oxide film 9 b is then formed on the upper electrode 7 . Accordingly, a structure in which the upper electrode 7 is formed in the silicon oxide film 9 b is provided.
- the sacrifice layer 15 is formed between the lower electrode 6 and the upper electrode 7 via the insulating layer.
- a first hole formation spot of the silicon oxide film 9 b with a focused ion beam 21 shown in FIG. 3 for a first predetermined time a first hole 3 a which reaches the sacrifice layer 15 is formed in the silicon oxide film 9 b, as shown in FIG. 17 .
- a second hole formation spot of the silicon oxide film 9 b with a focused ion beam 21 for a second predetermined time a second hole 3 b which reaches the sacrifice layer 15 as well is formed in the silicon oxide film 9 b.
- each of the first predetermined time and the second predetermined time is the time in which thermal equilibrium of the silicon oxide film (the second layer) 9 b can be maintained, that is, the ion beam irradiation time to such an extent that the silicon oxide film 9 b is not destroyed by heat.
- the first predetermined time and the second predetermined time each represent the irradiation time of the focused ion beam 21 that prevents the temperature of the silicon oxide film 9 b upon irradiation with the focused ion beam from increasing to 1600° C. (that keeps the temperature of the silicon oxide film 9 b below 1600° C.), which is the melting point of the silicon oxide film 9 b.
- a step of forming the first hole 3 a by the focused ion beam 21 and a step of forming the second hole 3 b by the focused ion beam 21 are repeatedly performed in order.
- irradiation with an ion beam having a large beam current density is applied to each hole formation spot for a short time, and this irradiation is repeatedly applied to a plurality of hole formation spots in order to perform cutting processing of the holes.
- a method may be adopted in which, by using the manufacturing method (ion beam irradiation conditions) indicated in FIG. 8 , continuous irradiation with the focused ion beam 21 having a low current density for a long time is simultaneously applied to the plurality of hole formation spots to form the plurality of holes 3 all at once.
- formation of the plurality of holes 3 such as the first hole 3 a and the second hole 3 b may be performed not by cutting processing with the focused ion beam 21 but by dry etching in such a way that the silicon oxide film 9 b is etched to form holes reaching the sacrifice layer 15 .
- the sacrifice layer 15 is removed through the first hole 3 a and the second hole 3 b to form the cavity 8 , which communicates with the first hole 3 a and the second hole 3 b, between the silicon oxide film 9 a and the silicon oxide film 9 b.
- the sacrifice layer 15 is removed by wet etching through the first hole 3 a and the second hole 3 b to form the cavity 8 .
- the sealing film 5 (the first sealing film 5 a and the second sealing film 5 b ) sealing each hole 3 is formed on each of the first hole 3 a and the second hole 3 b.
- Formation of the plurality of sealing films 5 according to the second embodiment is performed by using the irradiation conditions of the focused ion beam 21 indicated in FIG. 7 , which has been described above in the first embodiment, and adopting the short time deposition method indicated in FIG. 9 or by using the irradiation conditions of the focused ion beam 21 indicated in FIG. 8 and adopting the parallel deposition method indicated in FIG. 9 .
- the substrate is the semiconductor substrate 1 , byway of example.
- the substrate may be a glass substrate.
Abstract
Description
- The present application claims priority from Japanese Patent Application No. 2017-123905 filed on Jun. 26, 2017, the content of which is hereby incorporated by reference into this application.
- The present invention relates to a manufacturing method of a MEMS sensor.
- For manufacture of a MEMS (Micro Electro Mechanical System) sensor, a sensor manufacturing process through direct modeling by use of a focused ion beam (FIB) has been studied to achieve a manufacturing process with a shorter TAT (turn-around time). Manufacturing a MEMS sensor having a cavity, in particular, requires a process of sealing/protecting an element of the sensor for the purpose of making the cavity vacuum to improve the performance of the sensor.
- Japanese Patent Application Laid-Open Publication No. 2009-4591 (Patent Document 1) discloses a technique in which a micro-sampling piece is extracted and a corresponding sampling hole formed in a semiconductor wafer is repaired by use of a focused ion beam.
- In a MEMS sensor such as an ultrasonic sensor, when a cavity formed between an upper electrode and a lower electrode is sealed by a focused ion beam, the number of sealing spots is large (a total sealing volume is large), thereby causing a longer manufacturing time.
- Meanwhile, in order to eliminate the above problem of the longer manufacturing time, a deposition rate by the focused ion beam is increased, whereby another problem that the MEMS sensor is destroyed by heat is caused.
- Note that the above patent document (Japanese Patent Application Laid-Open Publication No. 2009-4591) does not describe structural destruction by heat, and describes only the method of filling up a single hole without describing a method of efficiently filling up a plurality of holes.
- An object of the present invention is to provide a technique in which, in manufacture of a MEMS sensor, a TAT can be shortened and thermal destruction of the MEMS sensor can be prevented.
- Other objects and novel characteristics of the present invention will be apparent from the description of the present specification and the accompanying drawings.
- The typical ones of the embodiments disclosed in the present application will be briefly described as follows.
- A manufacturing method of a MEMS sensor according to one embodiment, the method includes the steps of:
- (a) preparing a substrate on which a first layer and a second layer on the first layer via a cavity are formed and including a first hole and a second hole that are formed in the second layer in such a way as to communicate with the cavity;
- (b) after the step (a), by irradiating the first hole with a focused ion beam for a first predetermined time, forming a first sealing film that seals the first hole on the first hole; and
- (c) after the step (b), by irradiating the second hole with a focused ion beam for a second predetermined time, forming a second sealing film that seals the second hole on the second hole. In this method, each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and the step (b) and the step (c) are performed repeatedly.
- A manufacturing method of a MEMS sensor according to another embodiment, the method includes the step of:
- on a substrate, forming a first layer and a second layer on the first layer via a cavity, and by irradiating each of a plurality of holes formed in the second layer in such a way as to communicate with the cavity with a focused ion beam having a predetermined beam current density, forming a plurality of sealing films each sealing each of the plurality of holes, on the plurality of holes, respectively. Further, the predetermined beam current density is a beam current density at which thermal equilibrium of the second layer is maintainable, and the plurality of sealing films are formed simultaneously.
- Also, a manufacturing method of a MEMS sensor according to another embodiment, the method includes the steps of:
- (a) on a substrate, forming a first layer, a second layer on the first layer, and a third layer between the first layer and the second layer;
- (b) after the step (a), by irradiating a first hole formation spot of the second layer with a focused ion beam for a first predetermined time, forming a first hole in the second layer such that the first hole reaches the third layer;
- (c) after the step (b), by irradiating a second hole formation spot of the second layer with a focused ion beam for a second predetermined time, forming a second hole in the second layer such that the second hole reaches the third layer;
- (d) after the step (c), removing the third layer through the first hole and the second hole and then forming a cavity between the first layer and the second layer in such a way as to communicate with the first hole and the second hole; and
- (e) after the step (d), forming a sealing film on each of the first hole and the second hole. Each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and before the step (d), the step (b) and the step (c) are performed repeatedly.
- Effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
- In manufacture of a MEMS sensor, the TAT can be shortened, and thermal destruction of the MEMS sensor can be prevented.
-
FIG. 1 is a plan view of a principle portion of a MEMS sensor according to a first embodiment of the present invention; -
FIG. 2 is a cross-sectional view of a structure taken along a line A-A ofFIG. 1 ; -
FIG. 3 is a schematic diagram of a focused ion beam device used in the first embodiment; -
FIG. 4 is a graph indicating a relation between a sealed number and a manufacturing time, which has been studied by the inventors; -
FIG. 5 is a graph indicating a relation between a beam current density and a temperature increase during a film-forming process, which has been studied by the inventors; -
FIG. 6 is a graph indicating a relation between an ion beam irradiation time and a temperature increase, which has been studied by the inventors; -
FIG. 7 is a graph indicating a relation between an ion beam irradiation time and a beam current density according to a manufacturing method of the MEMS sensor of the first embodiment; -
FIG. 8 is a graph indicating a relation between an ion beam irradiation time and a beam current density according to a first modification example of the manufacturing method of the MEMS sensor of the first embodiment; -
FIG. 9 is a graph indicating a manufacturing time taken by each manufacturing method of the MEMS sensor according to the first embodiment; -
FIG. 10 is a cross-sectional view of a structure of a principle portion of a MEMS sensor according to a second modification example of the first embodiment; -
FIG. 11 is a cross-sectional view of a structure of a principle portion of a MEMS sensor according to a third modification example of the first embodiment before a sealing process; -
FIG. 12 is a cross-sectional view of the structure of the principle portion of the MEMS sensor according to the third modification example of the first embodiment after the sealing process; -
FIG. 13 is a schematic diagram of a structure of a focused ion beam device according to a fourth modification example of the first embodiment; -
FIG. 14 is a plan view showing a method of using a projection mask in the focused ion beam device ofFIG. 13 ; -
FIG. 15 is a schematic diagram of a structure of a sampling stage in a focused ion beam device according to a fifth modification example of the first embodiment; -
FIG. 16 is a cross-sectional view of a principle portion in a base forming process in a manufacturing method of a MEMS sensor according to a second embodiment of the present invention; -
FIG. 17 is a cross-sectional view of a principle portion in a hole forming process in the manufacturing method of the MEMS sensor according to the second embodiment of the present invention; -
FIG. 18 is a cross-sectional view of a principle portion in a sacrifice layer removing process in the manufacturing method of the MEMS sensor according to the second embodiment of the present invention; and -
FIG. 19 is a cross-sectional view of a principle portion in a sealing process in the manufacturing method of the MEMS sensor according to the second embodiment of the present invention. - A structure of an ultrasonic sensor, which is one embodiment of a MEMS sensor of the present invention, will be described with reference to the drawings.
- <Structure of Ultrasonic Sensor>
-
FIG. 1 is a plan view of a principle portion of a MEMS sensor according to a first embodiment of the present invention.FIG. 2 is a cross-sectional view of a structure taken along a line A-A ofFIG. 1 . - An ultrasonic sensor (MEMS sensor) 4 according to the first embodiment is a capacitive micro-machined ultrasonic transducer (CMUT) to which a semiconductor technique is applied.
- The
ultrasonic sensor 4 of the first embodiment shown inFIGS. 1 and 2 is manufactured on a substrate such as asemiconductor substrate 1 by patterning a plurality of micro sensors by lithography. Each micro sensor is structured such that acavity 8 having a vacuum atmosphere is formed in an insulating layer, with electrodes being formed below and above thecavity 8. - An electrostatic force is applied between these electrodes to cause an electrode film to vibrate, thereby transmitting an ultrasonic signal. Upon receiving a signal, the micro sensor converts a displacement amount of the electrode film into a change in capacitance to detect a signal.
- More specifically, in the structure of the
ultrasonic sensor 4 of the first embodiment shown inFIGS. 1 and 2 , a plurality of micro sensors (ultrasonic sensors 4, which are also called cells) each made into hexagon in a plan view are disposed in the insulating layer on thesemiconductor substrate 1 to spread across the insulating layer. - In the first embodiment, description will be given of a case in which each
ultrasonic sensor 4 has a silicon oxide film (SiO2 film) 9 which is the insulating layer formed on thesemiconductor substrate 1 and composed of a first layer and a second layer. Specifically, a silicon oxide film (SiO2 film) 9 a serving as the first layer is formed on thesemiconductor substrate 1, and a silicon oxide film (SiO2 film) 9 b serving as the second layer is formed on thesilicon oxide film 9 a via thecavity 8. Further, in thesilicon oxide film 9 a, a lower electrode (first electrode) 6 is formed. Meanwhile, in thesilicon oxide film 9 b, an upper electrode (second electrode) 7 having a hexagonal shape in a plan view is formed. - That is, the
ultrasonic sensor 4 includes a plurality of thelower electrodes 6 and a plurality of theupper electrodes 7 that are disposed opposite to each other with a plurality of thecavities 8 interposed therebetween in a film thickness direction. - Note that, as shown in
FIG. 1 , each pair ofupper electrodes 7 adjacent to each other are electrically connected through awiring 2, so that oneupper electrode 7 and anotherupper electrode 7 distant therefrom are also electrically connected through any of thewirings 2. - In addition, as shown in
FIG. 2 , thecavity 8 formed between thelower electrode 6 and theupper electrode 7 has a plurality ofholes 3 formed therein in such a way as to communicate with thecavity 8. For example, in thesilicon oxide film 9 b on thecavity 8, afirst hole 3 a communicating with thecavity 8 is formed, and similarly, asecond hole 3 b communicating with thecavity 8 is formed in thesilicon oxide film 9 b on an opposite side to thefirst hole 3 a. - Then, a sealing
film 5 which seals each of the plurality ofholes 3 is formed on an opening which opens in a front surface of thesilicon oxide film 9 b of each of theholes 3. Specifically, the opening of thefirst hole 3 a which opens in the front surface of thesilicon oxide film 9 b is covered with afirst sealing film 5 a formed to seal thefirst hole 3 a, and similarly, the opening of thesecond hole 3 b which opens in the front surface of thesilicon oxide film 9 b is covered with asecond sealing film 5 b formed to seal thesecond hole 3 b. - In the
ultrasonic sensor 4 shown inFIGS. 1 and 2 , theupper electrode 7 is formed into a hexagon in a plan view, and thecavity 8 corresponding to theupper electrode 7 is also formed into a hexagon in a plan view. As a result, theholes 3 each communicating with thecavity 8 are formed at locations close to the six corners of the hexagonalupper electrode 7, respectively. Accordingly, the plurality of sealingfilms 5, each of which seals eachcorresponding hole 3, are also formed at locations close to the six corners of the hexagonalupper electrode 7, respectively. By way of example, in a plan view, each of theholes 3 and each of the sealingfilms 5 sealing eachhole 3 are provided on a diagonal line L of the hexagonalupper electrode 7. Thus, in each of theultrasonic sensors 4, the plurality ofholes 3 and the plurality of sealingfilms 5 can be disposed efficiently relative to the hexagonalupper electrode 7 and thehexagonal cavity 8. - In this case, the sealing
film 5 such as thefirst sealing film 5 a and thesecond sealing film 5 b is a film deposited by a focused ion beam (FIB), which will be described later. - As described above, the plurality of
ultrasonic sensors 4, which are the plurality of micro sensors, are formed on thesemiconductor substrate 1. Each of theultrasonic sensors 4 has the plurality ofholes 3 and the plurality of sealingfilms 5 sealing the corresponding holes 3. - <Focused Ion Beam Device>
- A schematic configuration of a focused ion beam device that emits a focused ion beam for forming the sealing
film 5 of the first embodiment will then be described with reference toFIG. 3 .FIG. 3 is a schematic diagram of the focused ion beam device used in the first embodiment to form thesealing film 5. - A focused
ion beam device 20 shownFIG. 3 includes a vacuum chamber (not shown) in which afocused ion beam 21 is emitted onto a sample (a substrate such as the semiconductor substrate 1) 26. The vacuum chamber houses anion source 22 that discharges gallium ions, anaperture 23 and acondenser lens 24 that condense an ion beam, anobjective lens 25 that focuses the ion beam on a front surface of thesample 26, and asample stage 27 holding thesample 26. - The ion beam which is condensed and focused on the front surface of the
sample 26 is emitted onto the front surface of thesample 26 to process thesample 26. - <Matters Studied by Inventors of Present Application>
-
FIG. 4 is a graph indicating a relation between a sealed number and a manufacturing time, which has been studied by the inventors.FIG. 5 is a graph indicating a relation between a beam current density and a temperature increase during a film-forming process, which has been studied by the inventors.FIG. 6 is a graph indicating a relation between an ion beam irradiation time and a temperature increase, which has been studied by the inventors. -
FIG. 4 is a graph indicating temperature increases during a film-forming process using focused ion beams having three types of beam current densities, in terms of the relation between the sealed number and the manufacturing time. Three types of beam current densities include, for example, 15 nA/μm2, 30 nA/μm2, and 100 nA/μm2. The beam current density of 15 nA/μm2 does not cause thermal structural destruction (a curve marked with OK inFIG. 4 ). The beam current densities of 30 nA/μm2 and 100 nA/μm2, however, cause thermal structural destruction (curves marked with NG inFIG. 4 ). - Note that, in the case of the
ultrasonic sensor 4, a test cell has about 17,280 sealing spots, and one semiconductor chip has about 331,776 sealing spots, which means the number of sealing spots is significantly large. Under such circumstance, the curve representing the beam current density of 15 nA/μm2 that does not cause thermal structural destruction (OK) defines a manufacturing time for 17,280 sealing spots of the test cell as 144 hours, which is a long manufacturing time to take. - Next,
FIG. 5 is a graph indicating the relation between a beam current density and a temperature increase during the film-forming process for the case of the MEMS sensor having the cavity and the case of the MEMS sensor having no cavity.FIG. 5 indicates that, when the beam current density is 15 nA/μm2, a temperature increase in each case of the MEMS sensor having the cavity and the MEMS sensor having no cavity is lower than 1600° C., which is the melting point of the silicon oxide film, and in both cases, thermal destruction of the MEMS sensors does not occur (OK). - When the beam current density is 30 nA/μm2, however, the temperature increase of the MEMS sensor having no cavity does not reach 1600° C., while the temperature increase of the MEMS sensor having the cavity significantly exceed 1600° C., which is indicated as NG in the graph.
- It is therefore understood from
FIG. 5 that, in the MEMS sensor having the cavity, the cavity prevents heat conduction through the MESE sensor to slow down heat conduction, resulting in faster temperature increase and high temperature. In contrast, in the MEMS sensor having no cavity, heat conduction through the MEMS sensor is not prevented and performed faster, resulting in slow temperature increase and low temperature. - Next,
FIG. 6 is a graph indicating the relation between an irradiation time and a temperature increase for each beam current density. In the case of the beam current density of 15 nA/μm2 (curve A), the temperature increase saturates in a low-temperature range below 1600° C. In each case of the beam current density of 30 nA/μm2 (curve B) and beam current densities of 100 nA/μm2 (curve C), 1 μA/μm2 (curve D), and 10 μA/μm2 (curve E) which are larger than 30 nA/μm2, however, a saturation temperature gets higher and higher. - In view of this, according to a manufacturing method of the MEMS sensor of the first embodiment, the
focused ion beam 21 is emitted under a condition defined in a range F ofFIG. 6 (hatched range where a temperature increase is low). Specifically, the range F where the temperature of the MEMS sensor does not reach 1600° C. by applying a beam having a large beam current density for a short time is used. - A manufacturing method of the MEMS sensor of the first embodiment will then be described in detail.
FIG. 7 is a graph indicating a relation between an ion beam irradiation time and a beam current density. - As shown in
FIGS. 1 to 7 , for example, thefocused ion beam 21 is emitted onto sealing spots P and Q repeatedly to deposit thereon. In this process, the current density of thefocused ion beam 21 is made larger, and the application time of thefocused ion beam 21 is made shorter at each round of beam irradiation. - More specifically, the
semiconductor substrate 1 is prepared first, thesemiconductor substrate 1 including thefirst hole 3 a and thesecond hole 3 b that are formed in thesilicon oxide film 9 b such that they communicate with thecavity 8 formed between thelower electrode 6 and theupper electrode 7 on thesemiconductor substrate 1 shown inFIG. 2 . Subsequently, the focusedion beam device 20 shown inFIG. 3 irradiates thefirst hole 3 a of thesemiconductor substrate 1 with thefocused ion beam 21 for a first predetermined time. - This process forms the
first sealing film 5 a, which seals thefirst hole 3 a, on thefirst hole 3 a. This is equivalent to the first sealing spot P shown inFIG. 7 , for example. - Following the deposition on the first sealing spot P, the focused
ion beam device 20 shown inFIG. 3 irradiates thesecond hole 3 b shown inFIG. 2 with thefocused ion beam 21 for a second predetermined time in the same manner. - This process forms the
second sealing film 5 b, which seals thesecond hole 3 b, on thesecond hole 3 b. This is equivalent to the deposition on the second sealing spot Q, which is performed after the deposition on the first sealing spot P shown inFIG. 7 . - In these processes, each of the first predetermined time and the second predetermined time is the time in which thermal equilibrium of the
silicon oxide film 9 b can be maintained, that is, the ion beam irradiation time to such an extent that thesilicon oxide film 9 b is not destroyed by heat. Specifically, each of the first predetermined time and the second predetermined time is the irradiation time of thefocused ion beam 21 that prevents the temperature of thesilicon oxide film 9 b upon irradiation with the focused ion beam from reaching 1600° C. (that keeps the temperature of thesilicon oxide film 9 b below 1600° C.), which is the melting point of thesilicon oxide film 9 b. In other words, film formation is performed in the range F shown inFIG. 6 . For example, the current density of thefocused ion beam 21 is 10 μA/μm2, and the beam irradiation time, which is equivalent to each of the first predetermined time and the second predetermined time, is about 1E-8 (sec.) (E: exponential function). - Under such a condition, as shown in
FIG. 7 , sequential deposition on the sealing spots P, Q, R, S, P, . . . , Q, and R is repeated. As a result, the sealingfilm 5 is formed on eachhole 3 shown inFIG. 2 at the sealing spots P, Q, R, S, etc., shown inFIG. 1 . - Thus, according to the manufacturing method of the MEMS sensor of the first embodiment indicated in
FIG. 7 , an ion beam having a large beam current density is applied to a sealing spot for a short time, and this irradiation process is repeatedly performed in order on a plurality of sealing spots. In other words, high-rate deposition is performed using the range in which there is no temperature increase of thesilicon oxide film 9 b (range F inFIG. 6 ), for example. - As a result, in manufacture of the MEMS sensor (ultrasonic sensor 4), thermal destruction of the MEMS sensor can be prevented, while, at the same time, the TAT (Turn-Around Time) is shortened to allow the MEMS sensor to be manufactured efficiently.
- A manufacturing method of the MEMS sensor according to modification examples of the first embodiment will then be described.
-
FIG. 8 is a graph indicating a relation between an ion beam irradiation time and a beam current density according to a first modification example of the manufacturing method of the MEMS sensor of the first embodiment. This graph indicates the relation between the irradiation time and the current density of thefocused ion beam 21 which forms onesealing film 5 sealing onehole 3. - In the first modification example, by irradiating each of the plurality of
holes 3 formed in thesilicon oxide film 9 b in such a way as to communicate with thecavity 8 shown inFIG. 2 with thefocused ion beam 21 having a predetermined beam current density shown inFIG. 3 , the plurality of sealingfilms 5 respectively sealing the plurality ofholes 3 are formed on the plurality ofholes 3, respectively. At this time, according to the first modification example, the plurality of sealing films are formed simultaneously on the plurality ofholes 3, respectively. That is, the plurality of sealingfilms 5 are formed all at once.FIG. 8 is the graph indicating the relation between the irradiation time and the current density of thefocused ion beam 21 for forming one sealing film 5 (sealing spot P) in the case of simultaneously forming the plurality of sealingfilms 5. Accordingly, each of the plurality ofholes 3 is irradiated simultaneously with thefocused ion beam 21 at the current density and for the irradiation time indicated inFIG. 8 . - Note that, to cause the focused
ion beam device 20 to irradiate the plurality ofholes 3 with thefocused ion beam 21 simultaneously, a plurality of openings corresponding to the plurality ofholes 3 are formed in a mask serving as theaperture 23 so as to allow thefocused ion beam 21 to pass through each of the openings. Thus, thefocused ion beam 21 can be simultaneously emitted onto the plurality ofholes 3. - Also, the above predetermined beam current density set in the first modification example is the beam current density at which the thermal equilibrium of the
silicon oxide film 9 b can be maintained. That is, in the range shown inFIG. 6 where the temperature of thesilicon oxide film 9 b does not reach the melting point of 1600° C. (thermal equilibrium range, i.e., the range of beam current density in which the temperature of thesilicon oxide film 9 b is below 1600° C.), thefocused ion beam 21 having a low current density (e.g., 15 nA/μm2) is emitted simultaneously onto the plurality of holes 3 (continuously) for a long time, as indicated inFIG. 8 (parallel deposition). - According to the first modification example, irradiation with the ion beam having a low current density simultaneously forms the plurality of sealing
films 5, and as a result, in the manufacture of the MEMS sensor (ultrasonic sensor 4), thermal destruction of the MEMS sensor can be prevented, and the TAT is shortened, so that the MEMS sensor can be manufactured efficiently. -
FIG. 9 is a graph indicating a manufacturing time taken by each manufacturing method of the MEMS sensor according to the first embodiment. That is, the graph indicates the results of comparison of the MEMS sensor manufacturing times taken by respective manufacturing methods. - In
FIG. 9 , “study technique” indicates a MEMS sensor manufacturing time in the case of forming the plurality of (predetermined number of) sealingfilms 5 by adopting the beam current density of 15 nA/μm2 (curve A) indicated inFIG. 6 . In this case, the manufacturing time is 144 hours. - “Short time deposition” in
FIG. 9 is the case of adopting the method described with reference toFIG. 7 , and in this method, an ion beam having a large beam current density is emitted onto a sealing spot for a short time and this irradiation process is repeatedly performed in order on a plurality of sealing spots to perform deposition. When the plurality of (predetermined number of) sealingfilms 5 are formed by this “short time deposition” method, the MEMS sensor manufacturing time is 0.35 hour, and the manufacturing time can be reduced to 1/411 of the manufacturing time taken by the “study technique.” That is, adopting the “short time deposition” method reduces the TAT, so that the MEMS sensor can be manufactured efficiently. - Also, “parallel deposition” in
FIG. 9 indicates the case of adopting the method described with reference toFIG. 8 , and in this method, an ion beam having a low beam current density is emitted simultaneously onto a plurality of sealing spots continuously (for a long time) to form the plurality of sealingfilms 5 all at once. When the plurality of (predetermined number of) sealingfilms 5 are formed by this “parallel deposition” method, the MEMS sensor manufacturing time is 0.6 hour, and the manufacturing time can be reduced to 1/240 of the manufacturing time taken by the “study technique.” That is, adopting the “parallel deposition” method also reduces the TAT, so that the MEMS sensor can be manufactured efficiently, as in the case of adopting the “short time deposition” method. - Note that the manufacturing time indicated by “parallel deposition” in
FIG. 9 is the manufacturing time taken when, for example, about 240 sealingfilms 5 are formed in a 800 μm×800 μm area. - A second modification example of the first embodiment will then be described.
-
FIG. 10 is a cross-sectional view of a structure of a principle portion of a MEMS sensor according to the second modification example of the first embodiment. - In the second modification example, as shown in
FIG. 10 , a silicon nitride film (SiN film) 10, which is denser than thesilicon oxide film 9 shown inFIG. 2 , is formed as an insulating film formed on thesemiconductor substrate 1. Specifically, the MEMS sensor of the second modification example includes a silicon nitride film (an SiN film or the first layer) 10 a formed on thesemiconductor substrate 1, and a silicon nitride film (an SiN film or the second layer) 10 b formed on thesilicon nitride film 10 a. Thesilicon nitride film 10 a has thelower electrode 6 formed therein, and thesilicon nitride film 10 b has theupper electrode 7, thefirst hole 3 a, and thesecond hole 3 b formed therein. - Moreover, each of the
first sealing film 5 a and thesecond sealing film 5 b formed on eachhole 3, is a film containing a metal. In the structure shown inFIG. 10 , each of thefirst sealing film 5 a and thesecond sealing film 5 b includes thesilicon oxide film 9 or thesilicon nitride film 10, and ametal film 11 covering thesilicon oxide film 9 or thesilicon nitride film 10. In other words, thehole 3 is sealed with thesilicon oxide film 9 or thesilicon nitride film 10, and thesilicon oxide film 9 or thesilicon nitride film 10 is covered with themetal film 11. Note that themetal film 11 is, for example, a tungsten film. - In this manner, the
silicon nitride film 10 is adopted as the insulating film formed on thesemiconductor substrate 1, and thesealing film 5 sealing thehole 3 is partially made of themetal film 11, so that penetration of moisture from outside can be prevented. As a result, reliability of the MEMS sensor (ultrasonic sensor 4) can be improved. - A third modification example of the first embodiment will then be described.
-
FIG. 11 is a cross-sectional view of a structure of a principle portion of a MEMS sensor according to the third modification example of the first embodiment before the sealing process.FIG. 12 is a cross-sectional view of the structure of the principle portion of the MEMS sensor according to the third modification example of the first embodiment after the sealing process. - In the third modification example, by controlling a pressure in forming the sealing
films 5 by thefocused ion beam 21, an inner pressure of thecavity 8 is controlled when thecavity 8 is sealed up with the sealingfilms 5. - For example, in the structure before the sealing process shown in
FIG. 11 , the inner pressure of the chamber (not shown) of the focusedion beam device 20 shown inFIG. 3 is controlled by controlling a flow rate of a gas supplied into the chamber. By this process, a sealing pressure of thefirst sealing film 5 a and thesecond sealing film 5 b to be formed, shown inFIG. 12 , is controlled. The above gas may be a gas used for film forming or may be an inert gas supplied into the chamber. - Specifically, the flow rate of the gas supplied into the chamber is controlled before the sealing process to control the inner pressure of the
cavity 8 as well as an external pressure to the MEMS sensor, to 10 Pa, which is equal to a pressure at film formation. The sealing process is performed under this condition, that is, thefirst sealing film 5 a and thesecond sealing film 5 b are formed. Hence, the inner pressure of thecavity 8 can be controlled to 10 Pa. - Controlling the inner pressure of the
cavity 8 in this manner improves a performance of the MEMS sensor. The inner pressure of thecavity 8 is, for example, related to a quality factor. For this reason, controlling the inner pressure of thecavity 8 is important to improve the performance of the MEMS sensor. - A fourth modification example of the first embodiment will then be described.
-
FIG. 13 is a schematic diagram of a structure of a focused ion beam device according to the fourth modification example of the first embodiment.FIG. 14 is a plan view showing a method of using a projection mask in the focused ion beam device ofFIG. 13 . - In the fourth modification example, a focused
ion beam device 28 shown inFIG. 13 includes a mask having a double-layer structure composed of a first mask and a second mask. Specifically, this focusedion beam device 28 is provided with a first projection mask (first mask) 12 and a second projection mask (second mask) 13 which are stacked one on top of another, in place of theaperture 23 shown inFIG. 3 . - Note that, as shown in
FIG. 14 , thefirst projection mask 12 has a plurality offirst openings 12 a formed in such a way as to correspond to respective locations of theholes 3 to be formed, shown inFIG. 2 , and thesecond projection mask 13 has a plurality ofsecond openings 13 a formed in the same manner as thefirst openings 12 a. In this case, thefirst openings 12 a and thesecond openings 13 a are slightly shifted in position to each other. - When the
focused ion beam 21 is emitted onto thesample 26, the plurality offirst openings 12 a of thefirst projection mask 12 are overlapped with the plurality ofsecond openings 13 a of thesecond projection mask 13 to form a plurality of third openings 14 (hatched portions), through which the ion beam passes to be condensed, as shown inFIG. 14 . Overlapping thefirst openings 12 a of thefirst projection mask 12 with thesecond openings 13 a of thesecond projection mask 13 can form thethird openings 14 each smaller in area than each of thefirst openings 12 a and thesecond openings 13 a. - Accordingly, causing the ion beam to pass through the
third opening 14 can make a beam diameter of thefocused ion beam 21 smaller. - Using the mask having the double-layer structure in which the first projection masks 12 and the
second projection mask 13 are overlapped with each other in this manner improves a degree of freedom in changing a film-forming condition without increasing a type of mask. - A fifth modification example of the first embodiment will then be described.
-
FIG. 15 is a schematic diagram of a structure of a sampling stage in a focused ion beam device according to the fifth modification example of the first embodiment. - According to the fifth modification example, in the focused
ion beam device 20 shown inFIG. 3 , asubstrate holding surface 27 a of thesample stage 27 shown inFIG. 15 is tilted at an angle θ relative to a horizontal direction X. Specifically, thesubstrate holding surface 27 a of thesample stage 27 which holds thesample 26 is formed such that thesubstrate holding surface 27 a and the horizontal direction X make a predetermined angle θ (e.g., θ=15° or 30°). - With this structure, in the process of forming the plurality of sealing
films 5 shown inFIG. 2 , it is possible to irradiate the sample 26 (e.g., the semiconductor substrate 1) held on thesample stage 27 such that thesample 26 is tilted relative to the horizontal direction X at a predetermined angle, with thefocused ion beam 21. Accordingly, when the plurality of sealingfilms 5 are formed, a pitch between the films can be made smaller than a pitch between the plurality of sealingfilms 5 formed on the horizontally heldsample 26. - Note that, since the plurality of
holes 3 shown inFIG. 2 are not always arranged at equal intervals, allowing for adjustment of the pitch between the sealingfilms 5 improves a degree of freedom in forming the plurality of sealingfilms 5. -
FIG. 16 is a cross-sectional view of a principle portion in a base forming process in a manufacturing method of a MEMS sensor according to a second embodiment of the present invention.FIG. 17 is a cross-sectional view of a principle portion in a hole forming process in the manufacturing method of the MEMS sensor according to the second embodiment of the present invention.FIG. 18 is a cross-sectional view of a principle portion in a sacrifice layer removing process in the manufacturing method of the MEMS sensor according to the second embodiment of the present invention.FIG. 19 is a cross-sectional view of a principle portion in a sealing process in the manufacturing method of the MEMS sensor according to the second embodiment of the present invention. - In the second embodiment, main processes including the base forming process to the sealing process according to the manufacturing method of the MEMS sensor will be described.
- First, the base forming process shown in
FIG. 16 will be described. On asemiconductor substrate 1, a silicon oxide film (a first layer) 9 a, a silicon oxide film (a second layer) 9 b on thesilicon oxide film 9 a, and a sacrifice layer 15 (a third layer) between thesilicon oxide film 9 a and thesilicon oxide film 9 b are formed. More specifically, the silicon oxide film (the first layer) 9 a is formed as an insulating layer on thesemiconductor substrate 1, and alower electrode 6 is further formed on thesilicon oxide film 9 a. Subsequently, on thelower electrode 6, anothersilicon oxide film 9 a is formed. Accordingly, a structure in which thelower electrode 6 is formed in thesilicon oxide film 9 a is provided. Then, thesacrifice layer 15 is further formed on an upper layer of thesilicon oxide film 9 a on thelower electrode 6. - Note that the sacrifice layer 15 (the third layer) is preferably a metal film made of, for example, titanium, tungsten, or molybdenum. Forming the
sacrifice layer 15 with the metal film allows for highly precise formation of a cavity 8 (seeFIG. 18 ) in a subsequent process where thecavity 8 is formed by removing thesacrifice layer 15. - Subsequently, the silicon oxide film (second layer) 9 b serving as the insulating layer is formed on the
sacrifice layer 15, and anupper electrode 7 is further formed on thesilicon oxide film 9 b. Anothersilicon oxide film 9 b is then formed on theupper electrode 7. Accordingly, a structure in which theupper electrode 7 is formed in thesilicon oxide film 9 b is provided. Hence, thesacrifice layer 15 is formed between thelower electrode 6 and theupper electrode 7 via the insulating layer. - Subsequently, by irradiating a first hole formation spot of the
silicon oxide film 9 b with afocused ion beam 21 shown inFIG. 3 for a first predetermined time, afirst hole 3 a which reaches thesacrifice layer 15 is formed in thesilicon oxide film 9 b, as shown inFIG. 17 . Also, by irradiating a second hole formation spot of thesilicon oxide film 9 b with afocused ion beam 21 for a second predetermined time, asecond hole 3 b which reaches thesacrifice layer 15 as well is formed in thesilicon oxide film 9 b. - Note that, when a plurality of
holes 3 are formed by cutting processing with thefocused ion beam 21 irradiated, the cutting processing can be performed in the same manner as the ion beam irradiation conditions shown inFIG. 7 . That is, each of the first predetermined time and the second predetermined time is the time in which thermal equilibrium of the silicon oxide film (the second layer) 9 b can be maintained, that is, the ion beam irradiation time to such an extent that thesilicon oxide film 9 b is not destroyed by heat. Specifically, the first predetermined time and the second predetermined time each represent the irradiation time of thefocused ion beam 21 that prevents the temperature of thesilicon oxide film 9 b upon irradiation with the focused ion beam from increasing to 1600° C. (that keeps the temperature of thesilicon oxide film 9 b below 1600° C.), which is the melting point of thesilicon oxide film 9 b. - Under the above irradiation conditions of the
focused ion beam 21, a step of forming thefirst hole 3 a by thefocused ion beam 21 and a step of forming thesecond hole 3 b by thefocused ion beam 21 are repeatedly performed in order. - Thus, by using the manufacturing method (ion beam irradiation conditions) indicated in
FIG. 7 , irradiation with an ion beam having a large beam current density is applied to each hole formation spot for a short time, and this irradiation is repeatedly applied to a plurality of hole formation spots in order to perform cutting processing of the holes. - Accordingly, in processing the plurality of holes in the manufacture of the MEMS sensor (ultrasonic sensor 4), thermal destruction of the MEMS sensor can be prevented, and the TAT (Turn-Around Time) is shortened, so that hole processing can be performed efficiently.
- Note that, as the method of forming the plurality of
holes 3 according to the second embodiment, a method may be adopted in which, by using the manufacturing method (ion beam irradiation conditions) indicated inFIG. 8 , continuous irradiation with thefocused ion beam 21 having a low current density for a long time is simultaneously applied to the plurality of hole formation spots to form the plurality ofholes 3 all at once. - When this method is adopted for processing the plurality of holes in the manufacture of the MEMS sensor (ultrasonic sensor 4), thermal destruction of the MEMS sensor can also be prevented, and the TAT (Turn-Around Time) is shortened, so that the hole processing can be performed efficiently, as in the above case.
- Note that formation of the plurality of
holes 3 such as thefirst hole 3 a and thesecond hole 3 b may be performed not by cutting processing with thefocused ion beam 21 but by dry etching in such a way that thesilicon oxide film 9 b is etched to form holes reaching thesacrifice layer 15. - Subsequently, after the plurality of
holes 3 such as thefirst hole 3 a and thesecond hole 3 b are formed in such a way as to reach thesacrifice layer 15, thesacrifice layer 15 is removed through thefirst hole 3 a and thesecond hole 3 b to form thecavity 8, which communicates with thefirst hole 3 a and thesecond hole 3 b, between thesilicon oxide film 9 a and thesilicon oxide film 9 b. - In this process, for example, the
sacrifice layer 15 is removed by wet etching through thefirst hole 3 a and thesecond hole 3 b to form thecavity 8. - Subsequently, as shown in
FIG. 19 , the sealing film 5 (thefirst sealing film 5 a and thesecond sealing film 5 b) sealing eachhole 3 is formed on each of thefirst hole 3 a and thesecond hole 3 b. - Formation of the plurality of sealing
films 5 according to the second embodiment is performed by using the irradiation conditions of thefocused ion beam 21 indicated inFIG. 7 , which has been described above in the first embodiment, and adopting the short time deposition method indicated inFIG. 9 or by using the irradiation conditions of thefocused ion beam 21 indicated inFIG. 8 and adopting the parallel deposition method indicated inFIG. 9 . - Note that the present invention is not limited to the above-described embodiment, and various modifications are included. For example, the above-described embodiment has been described in detail so that the present invention is easily understood, and is not limited to the one necessarily including all configurations described.
- Also, a part of the configuration of an embodiment can be replaced with the configuration of other embodiments, and the configuration of other embodiments can be added to the configuration of an embodiment. In addition, other configurations can be added to, deleted from, or replaced with the part of the configuration of each embodiment. Note that each member described in the drawings and a relative size is simplified and idealized so that the present invention is easily understood, actual implantation is more complicated in shape.
- Further, in the first embodiment and the second embodiment described above, description has been given of a case in which the substrate is the
semiconductor substrate 1, byway of example. However, the substrate may be a glass substrate.
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017123905A JP6829660B2 (en) | 2017-06-26 | 2017-06-26 | Manufacturing method of MEMS sensor |
JP2017-123905 | 2017-06-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
US10160644B1 US10160644B1 (en) | 2018-12-25 |
US20180370793A1 true US20180370793A1 (en) | 2018-12-27 |
Family
ID=64691965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/918,502 Expired - Fee Related US10160644B1 (en) | 2017-06-26 | 2018-03-12 | Manufacturing method of MEMS sensor |
Country Status (2)
Country | Link |
---|---|
US (1) | US10160644B1 (en) |
JP (1) | JP6829660B2 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5982709A (en) * | 1998-03-31 | 1999-11-09 | The Board Of Trustees Of The Leland Stanford Junior University | Acoustic transducers and method of microfabrication |
US7830069B2 (en) * | 2004-04-20 | 2010-11-09 | Sunnybrook Health Sciences Centre | Arrayed ultrasonic transducer |
US9067779B1 (en) * | 2014-07-14 | 2015-06-30 | Butterfly Network, Inc. | Microfabricated ultrasonic transducers and related apparatus and methods |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009004591A (en) | 2007-06-22 | 2009-01-08 | Elpida Memory Inc | Manufacturing method of semiconductor device |
-
2017
- 2017-06-26 JP JP2017123905A patent/JP6829660B2/en active Active
-
2018
- 2018-03-12 US US15/918,502 patent/US10160644B1/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5982709A (en) * | 1998-03-31 | 1999-11-09 | The Board Of Trustees Of The Leland Stanford Junior University | Acoustic transducers and method of microfabrication |
US7830069B2 (en) * | 2004-04-20 | 2010-11-09 | Sunnybrook Health Sciences Centre | Arrayed ultrasonic transducer |
US9067779B1 (en) * | 2014-07-14 | 2015-06-30 | Butterfly Network, Inc. | Microfabricated ultrasonic transducers and related apparatus and methods |
Also Published As
Publication number | Publication date |
---|---|
JP6829660B2 (en) | 2021-02-10 |
US10160644B1 (en) | 2018-12-25 |
JP2019005853A (en) | 2019-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5452849B2 (en) | Sealed micropart with at least one getter | |
US20050189621A1 (en) | Processes for hermetically packaging wafer level microscopic structures | |
US5520297A (en) | Aperture plate and a method of manufacturing the same | |
US20160377513A1 (en) | Sample collection device and sample collection device array | |
JP2011243577A (en) | Manufacturing method of thin film battery and thin film battery | |
US10160644B1 (en) | Manufacturing method of MEMS sensor | |
US20220033249A1 (en) | Mems sensor with particle filter and method for producing it | |
JPH07193052A (en) | Formation of minute cavity and minute device having minute cavity | |
JP2009289953A (en) | Wafer-level package, wafer-level package manufacturing method, and mems device manufacturing method | |
US20170050843A1 (en) | Method of manufacturing electronic device | |
US7649672B2 (en) | MEMS structure and method of fabricating the same | |
JP2013157468A (en) | Method for manufacturing semiconductor device | |
KR101405561B1 (en) | MEMS sensor packaging method | |
CN111725078B (en) | Semiconductor device having discharge path and method of manufacturing the same | |
JPS5845811B2 (en) | Method for forming minute conductive regions on semiconductor chip surface | |
US11554952B2 (en) | Method for closing openings in a flexible diaphragm of a MEMS element | |
JP6887343B2 (en) | Processing method, semiconductor equipment and processing equipment | |
US11851324B2 (en) | Method for sealing entries in a MEMS element | |
KR100497839B1 (en) | Method of manufacturing a micro column combined emission | |
US20200198966A1 (en) | Micromechanical device and method for manufacturing a micromechanical device | |
US20150291417A1 (en) | Device packaging method and device package using the same | |
EP3609688B1 (en) | Method for the production of lens elements and housed, radiation-sensitive components on wafer level | |
JP4248191B2 (en) | Method for manufacturing array structure | |
JP2019040702A (en) | Specimen processing method and ion beam processing device | |
JP2813343B2 (en) | Method and apparatus for forming conductive film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: HITACHI, LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KINOSHITA, MASAHARU;ISOBE, ATSUSHI;ONO, KAZUO;AND OTHERS;REEL/FRAME:045176/0988 Effective date: 20180218 |
|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20221225 |