US20180277716A1 - Light emitting diode capable of generating different light colors over single wafer - Google Patents
Light emitting diode capable of generating different light colors over single wafer Download PDFInfo
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- US20180277716A1 US20180277716A1 US15/608,584 US201715608584A US2018277716A1 US 20180277716 A1 US20180277716 A1 US 20180277716A1 US 201715608584 A US201715608584 A US 201715608584A US 2018277716 A1 US2018277716 A1 US 2018277716A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/0079—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
Definitions
- the present invention relates to a light source structure of a light emitting diode (LED), and more particularly to an LED structure capable of generating different light colors over a single wafer.
- LED light emitting diode
- a light emitting diode is a luminescence assembly.
- a luminescence principle thereof is to exert a forward bias voltage (current) on a III-V compound semiconductor material, and to utilize a form of combining electrons and electron holes in the LED with each other and converting energy into light, where light can be emitted during energy release and the LED will not be as hot as an incandescent lamp bulb after being used for a long time.
- the LED is advantageous in small size, long life, low drive voltage, high response rate and excellent seismic resistance, can meet demands for various lightweight, thin and miniaturized devices, and has become a product popularized in daily life.
- LEDs may be mainly divided into a vertical-type LED ( FIG. 1 ) and a horizontal-type LED ( FIG. 2 ) according to different drive structures (electrode structures).
- the LED structurally comprises a wafer substrate 1 , an LED light-emitting layer 2 and a circuit layer 3 , the wafer substrate 1 being divided into a conductive (vertical-type LED) substrate and a non-conductive (horizontal-type LED) substrate, and adopting a silicon substrate, a sapphire substrate, etc.
- the LED light-emitting layer 2 comprises a first-type semiconductor layer 2 a , a light-emitting layer 2 b and a second-type semiconductor layer 2 c , constituting a sandwich structure.
- the first-type semiconductor layer 2 a may adopt an N-type semiconductor layer or a P-type semiconductor
- the second-type semiconductor layer 2 c may adopt a P-type semiconductor layer or an N-type semiconductor correspondingly.
- the light-emitting layer 2 b is made of a III-V compound material, which may be selected according to a wavelength to be emitted.
- the circuit layer 3 comprises a first-type electrode 3 a and a second-type electrode 3 b , which may be provided on the same side of the LED light-emitting layer 2 (horizontal-type LED) separately or two sides of the LED light-emitting layer 2 (vertical-type LED). Accordingly, after a voltage is exerted between the first-type electrode 3 a and the second-type electrode 3 b , an electron and an electron hole may be provided respectively, the electron and the electron hole may be combined inside the light-emitting layer 2 b , and can further jump by steps to generate exciting light.
- LEDs capable of emitting light having various colors such as red, orange, yellow, green, blue and purple as well as invisible light such as infrared light and ultraviolet light can be designed by utilizing the changes of various compound semiconductor materials and assembly structures, and various LEDs have been widely applied to outdoor advertising boards, stop lamps, traffic lights, displays, etc.
- LED chips are of a single light-emitting wavelength range specification
- a packaging factory will package this chip of the single light-emitting wavelength range specification or needs to package two or more chips within different light-emitting wavelength ranges into an identical packaging body, the completed packaging bodies are arranged and assembled as required, a single chip or a single LED assembly is controlled by a control circuit, and LEDs having different light-emitting wavelengths generate mixed light to than a full-color display picture effect.
- the prior art and structure will generate a large clearance between LEDs, thus being adverse to miniaturization.
- an American patent filed U.S. Pat. No. 8,569,083 B2 discloses a structure having a plurality of light-emitting layers 22 over a substrate, a wavelength conversion convergence layer and a wavelength conversion layer are stacked in sequence, and light emitted by the plurality of light-emitting layers 22 is absorbed and converted through the wavelength conversion convergence layer and the wavelength conversion layer to make main wavelengths of finally-emitted light relatively consistent.
- a procedure of sorting and binning and then rearrangement according to main wavelength distribution in a known LED array grain manufacturing process is omitted, and production costs can be reduced.
- the present invention is mainly intended to provide an LED capable of generating different light colors over a single wafer, which can adjust light intensities of different light colors as required and enables a color temperature of mixed light to meet demands in use.
- the present invention provides an LED capable of generating different light colors over a single wafer, which comprises a wafer substrate, an LED light-emitting layer, a circuit layer and an excitation material layer, the LED light-emitting layer being provided on the wafer substrate.
- the LED light-emitting layer has at least two light-emitting regions, independently distinguished.
- the circuit layer provides a forward bias voltage for the LED light-emitting layer, and the circuit layer has at least two circuit structures that correspond to the at least two light-emitting regions in quantity and are independently controlled.
- the excitation material layer covers the LED light-emitting layer, the excitation material layer has at least one photo-luminescence material, at least one of the at least two light-emitting regions is provided with the photo-luminescence material, at least one of the at least two light-emitting regions is not provided with the photo-luminescence material, and light having two wavelengths (provided with the photo-luminescence material and not provided with the photo-luminescence material) may be emitted at least.
- the excitation material layer has at least two photo-luminescence materials, at least two different photo-luminescence materials are provided on the at least two light-emitting regions, and light having two wavelengths may be emitted at least likewise.
- a manner of providing the photo-luminescence material is adopted, and the at least two independently-distinguished light-emitting regions and the at least two independently-controlled circuit structures are cooperatively adopted, so light having two wavelengths may be emitted at least. Furthermore, by independently controlling the at least two circuit structures, light intensities of the light having two wavelengths can be further slightly adjusted to adjust color temperatures. Moreover, the circuit structures are provided on the single wafer substrate, processing and manufacturing can be completed at the same time, miniaturization can be achieved, manufacturing costs can be reduced, and demands in use can be met.
- FIG. 1 is an optical structure diagram of a known vertical-type LED.
- FIG. 2 is an optical structure diagram of a known horizontal-type LED.
- FIG. 3 is an optical structure diagram of a first embodiment of the present invention.
- FIG. 4 is an optical structure diagram of a second embodiment of the present invention.
- FIG. 5 is an optical structure diagram of a third embodiment of the present invention.
- FIG. 6 is an independent distinguishing diagram 1 of an LED light-emitting layer of the present invention.
- FIG. 7 is an independent distinguishing diagram 2 of an LED light-emitting layer of the present invention.
- FIG. 8 is an independent distinguishing diagram 3 of an LED light-emitting layer of the present invention.
- FIG. 3 is an optical structure diagram of a first embodiment of the present invention.
- the structure is illustrated with a vertical-type LED.
- the structure is an LED light-emitting layer structure capable of generating different light colors over a single wafer, which comprises a wafer substrate 10 , an LED light-emitting layer 20 , a circuit layer 30 and an excitation material layer 40 .
- the wafer substrate 10 is conductive and may adopt a silicon substrate.
- the LED light-emitting layer 20 is provided on the wafer substrate 10 , the LED light-emitting layer 20 includes at least two light-emitting regions 201 , independently distinguished, and the LED light-emitting layer 20 may include a first-type semiconductor layer 21 , a light-emitting layer 22 and a second-type semiconductor layer 23 .
- the first-type semiconductor layer 21 may adopt an N-type semiconductor layer or a P-type semiconductor
- the second-type semiconductor layer 23 may adopt a P-type semiconductor layer or an N-type semiconductor correspondingly.
- the circuit layer 30 provides a forward bias voltage for the LED light-emitting layer 20
- the circuit layer 30 includes at least two circuit structures 301 that correspond to the at least two light-emitting regions 201 in quantity and are independently controlled
- the at least two circuit structures 301 may include a second-type electrode 32 and a first-type electrode 31 respectively.
- the second-type electrode 32 is provided below the wafer substrate 10
- the first-type electrode 31 is provided over the semiconductor layer 21 .
- the excitation material layer 40 covers the LED light-emitting layer 20 , the excitation material layer 40 includes at least two photo-luminescence materials 401 , and at least two different photo-luminescence materials 401 are provided on the at least two light-emitting regions 201 .
- FIG. 4 is an optical structure diagram of a second embodiment of the present invention.
- the excitation material layer 40 includes at least one photo-luminescence material 401 , at least one of the at least two light-emitting regions 201 is provided with the photo-luminescence material 401 , and at least one of the at least two light-emitting regions 201 is not provided with the photo-luminescence material 401 .
- the present embodiment is characterized in that the excitation material layer 40 does not cover the at least one LED light-emitting layer 20 , and when there are two or more light-emitting regions 201 provided with the photo-luminescence material 401 , different photo-luminescence materials 401 may be provided respectively.
- FIG. 5 is an optical structure diagram of a third embodiment of the present invention.
- the structure is illustrated with a horizontal-type LED.
- the present embodiment is characterized in that the wafer substrate 10 is not limited to a highly-conductive material, and therefore a silicon substrate may be adopted; the first-type semiconductor layer 21 is provided on the wafer substrate 10 , and the first-type semiconductor layer 21 is exposed to allow provision of the first-type electrode 31 . That is, regions of the light-emitting layer 22 and the second-type semiconductor layer 23 will be drawn back, and in addition, the second-type electrode 32 is provided on the second-type semiconductor layer 23 .
- a combined appearance of the at least two light-emitting regions 201 may be of multiple shapes that can be set according to practical use demands, and the two light-emitting regions 201 may be of any one of a fan shape (as shown in FIG. 6 ), a rectangle (as shown in FIG. 7 ) and a polygon (as shown in FIG. 8 ).
- the present invention has, at least advantages as follows.
- a manner of providing the photo-luminescence material is adopted, and the at least two independently-distinguished light-emitting regions and the at least two independently-controlled circuit structures are cooperatively adopted, so light having two wavelengths may be emitted at least.
- light intensities of the light having two wavelengths can be further slightly adjusted to adjust color temperatures so as to make wavelengths consistent.
- circuit structures are provided on the single wafer substrate, processing and manufacturing can be completed at the same time, miniaturization can be achieved, manufacturing costs can be reduced, and demands in use can be met.
Abstract
Description
- The present invention relates to a light source structure of a light emitting diode (LED), and more particularly to an LED structure capable of generating different light colors over a single wafer.
- A light emitting diode (LED) is a luminescence assembly. A luminescence principle thereof is to exert a forward bias voltage (current) on a III-V compound semiconductor material, and to utilize a form of combining electrons and electron holes in the LED with each other and converting energy into light, where light can be emitted during energy release and the LED will not be as hot as an incandescent lamp bulb after being used for a long time. The LED is advantageous in small size, long life, low drive voltage, high response rate and excellent seismic resistance, can meet demands for various lightweight, thin and miniaturized devices, and has become a product popularized in daily life.
- Referring to
FIG. 1 andFIG. 2 , LEDs may be mainly divided into a vertical-type LED (FIG. 1 ) and a horizontal-type LED (FIG. 2 ) according to different drive structures (electrode structures). The LED structurally comprises awafer substrate 1, an LED light-emitting layer 2 and acircuit layer 3, thewafer substrate 1 being divided into a conductive (vertical-type LED) substrate and a non-conductive (horizontal-type LED) substrate, and adopting a silicon substrate, a sapphire substrate, etc. - The LED light-
emitting layer 2 comprises a first-type semiconductor layer 2 a, a light-emittinglayer 2 b and a second-type semiconductor layer 2 c, constituting a sandwich structure. The first-type semiconductor layer 2 a may adopt an N-type semiconductor layer or a P-type semiconductor, and the second-type semiconductor layer 2 c may adopt a P-type semiconductor layer or an N-type semiconductor correspondingly. The light-emittinglayer 2 b is made of a III-V compound material, which may be selected according to a wavelength to be emitted. Thecircuit layer 3 comprises a first-type electrode 3 a and a second-type electrode 3 b, which may be provided on the same side of the LED light-emitting layer 2 (horizontal-type LED) separately or two sides of the LED light-emitting layer 2 (vertical-type LED). Accordingly, after a voltage is exerted between the first-type electrode 3 a and the second-type electrode 3 b, an electron and an electron hole may be provided respectively, the electron and the electron hole may be combined inside the light-emittinglayer 2 b, and can further jump by steps to generate exciting light. - The current light-emitting performance and efficiency of the LED are increasingly advanced, a great variety of LEDs can be widely applied to daily life, an LED capable of emitting light having various colors such as red, orange, yellow, green, blue and purple as well as invisible light such as infrared light and ultraviolet light can be designed by utilizing the changes of various compound semiconductor materials and assembly structures, and various LEDs have been widely applied to outdoor advertising boards, stop lamps, traffic lights, displays, etc.
- At present, LED chips are of a single light-emitting wavelength range specification, a packaging factory will package this chip of the single light-emitting wavelength range specification or needs to package two or more chips within different light-emitting wavelength ranges into an identical packaging body, the completed packaging bodies are arranged and assembled as required, a single chip or a single LED assembly is controlled by a control circuit, and LEDs having different light-emitting wavelengths generate mixed light to than a full-color display picture effect. But the prior art and structure will generate a large clearance between LEDs, thus being adverse to miniaturization.
- Due to variation influences of manufacturing procedures and materials, main wavelength distributions of LED chips produced in each batch are different. When light having specific wavelength characteristics needs to be emitted, demands of light emission in different lighting occasions need to be met or a specific color for full-color display needs to be formed, in order to meet requirements for color accuracy, the earliest prior art refers to: binning many LED grains by utilizing spot measurement, sorting and binning programs to sort out LED grains close to the main wavelength distributions to result in considerable cost and time consumption of applications having different wavelength characteristic demands.
- Therefore, an American patent filed U.S. Pat. No. 8,569,083 B2 discloses a structure having a plurality of light-emitting
layers 22 over a substrate, a wavelength conversion convergence layer and a wavelength conversion layer are stacked in sequence, and light emitted by the plurality of light-emittinglayers 22 is absorbed and converted through the wavelength conversion convergence layer and the wavelength conversion layer to make main wavelengths of finally-emitted light relatively consistent. Thus, a procedure of sorting and binning and then rearrangement according to main wavelength distribution in a known LED array grain manufacturing process is omitted, and production costs can be reduced. - However, repeated wavelength conversion results in that the utilization efficiency of light is low, the phenomenon of high heat is easily caused, miniaturization is difficult to achieve and high-brightness demands cannot be met. Moreover, a multi-layer stacking structure will increase manufacturing costs and reduce manufacturing yields, and demands in use are difficult to meet.
- To this end, the present invention is mainly intended to provide an LED capable of generating different light colors over a single wafer, which can adjust light intensities of different light colors as required and enables a color temperature of mixed light to meet demands in use.
- The present invention provides an LED capable of generating different light colors over a single wafer, which comprises a wafer substrate, an LED light-emitting layer, a circuit layer and an excitation material layer, the LED light-emitting layer being provided on the wafer substrate. The LED light-emitting layer has at least two light-emitting regions, independently distinguished. The circuit layer provides a forward bias voltage for the LED light-emitting layer, and the circuit layer has at least two circuit structures that correspond to the at least two light-emitting regions in quantity and are independently controlled. The excitation material layer covers the LED light-emitting layer, the excitation material layer has at least one photo-luminescence material, at least one of the at least two light-emitting regions is provided with the photo-luminescence material, at least one of the at least two light-emitting regions is not provided with the photo-luminescence material, and light having two wavelengths (provided with the photo-luminescence material and not provided with the photo-luminescence material) may be emitted at least.
- Or, on the premise of covering the LED light-emitting layer with the excitation material layer, the excitation material layer has at least two photo-luminescence materials, at least two different photo-luminescence materials are provided on the at least two light-emitting regions, and light having two wavelengths may be emitted at least likewise.
- Accordingly, in the present invention, a manner of providing the photo-luminescence material is adopted, and the at least two independently-distinguished light-emitting regions and the at least two independently-controlled circuit structures are cooperatively adopted, so light having two wavelengths may be emitted at least. Furthermore, by independently controlling the at least two circuit structures, light intensities of the light having two wavelengths can be further slightly adjusted to adjust color temperatures. Moreover, the circuit structures are provided on the single wafer substrate, processing and manufacturing can be completed at the same time, miniaturization can be achieved, manufacturing costs can be reduced, and demands in use can be met.
-
FIG. 1 is an optical structure diagram of a known vertical-type LED. -
FIG. 2 is an optical structure diagram of a known horizontal-type LED. -
FIG. 3 is an optical structure diagram of a first embodiment of the present invention. -
FIG. 4 is an optical structure diagram of a second embodiment of the present invention. -
FIG. 5 is an optical structure diagram of a third embodiment of the present invention. -
FIG. 6 is an independent distinguishing diagram 1 of an LED light-emitting layer of the present invention. -
FIG. 7 is an independent distinguishing diagram 2 of an LED light-emitting layer of the present invention. -
FIG. 8 is an independent distinguishing diagram 3 of an LED light-emitting layer of the present invention. - In order to make a member further understand and accept features, purposes and effects of the present invention, descriptions will be made with reference to a preferable embodiment and in conjunction with the drawings as follows.
- Referring to
FIG. 3 ,FIG. 3 is an optical structure diagram of a first embodiment of the present invention. The structure is illustrated with a vertical-type LED. The structure is an LED light-emitting layer structure capable of generating different light colors over a single wafer, which comprises awafer substrate 10, an LED light-emitting layer 20, acircuit layer 30 and anexcitation material layer 40. In the present embodiment, thewafer substrate 10 is conductive and may adopt a silicon substrate. - The LED light-
emitting layer 20 is provided on thewafer substrate 10, the LED light-emitting layer 20 includes at least two light-emitting regions 201, independently distinguished, and the LED light-emittinglayer 20 may include a first-type semiconductor layer 21, a light-emittinglayer 22 and a second-type semiconductor layer 23. The first-type semiconductor layer 21 may adopt an N-type semiconductor layer or a P-type semiconductor, and the second-type semiconductor layer 23 may adopt a P-type semiconductor layer or an N-type semiconductor correspondingly. - The
circuit layer 30 provides a forward bias voltage for the LED light-emitting layer 20, thecircuit layer 30 includes at least twocircuit structures 301 that correspond to the at least two light-emitting regions 201 in quantity and are independently controlled, and the at least twocircuit structures 301 may include a second-type electrode 32 and a first-type electrode 31 respectively. The second-type electrode 32 is provided below thewafer substrate 10, and the first-type electrode 31 is provided over thesemiconductor layer 21. - The
excitation material layer 40 covers the LED light-emitting layer 20, theexcitation material layer 40 includes at least two photo-luminescence materials 401, and at least two different photo-luminescence materials 401 are provided on the at least two light-emitting regions 201. - Referring to
FIG. 4 ,FIG. 4 is an optical structure diagram of a second embodiment of the present invention. In the present embodiment, theexcitation material layer 40 includes at least one photo-luminescence material 401, at least one of the at least two light-emitting regions 201 is provided with the photo-luminescence material 401, and at least one of the at least two light-emitting regions 201 is not provided with the photo-luminescence material 401. Different from the first embodiment, the present embodiment is characterized in that theexcitation material layer 40 does not cover the at least one LED light-emitting layer 20, and when there are two or more light-emittingregions 201 provided with the photo-luminescence material 401, different photo-luminescence materials 401 may be provided respectively. - Referring to
FIG. 5 ,FIG. 5 is an optical structure diagram of a third embodiment of the present invention. The structure is illustrated with a horizontal-type LED. Different from the first embodiment, the present embodiment is characterized in that thewafer substrate 10 is not limited to a highly-conductive material, and therefore a silicon substrate may be adopted; the first-type semiconductor layer 21 is provided on thewafer substrate 10, and the first-type semiconductor layer 21 is exposed to allow provision of the first-type electrode 31. That is, regions of the light-emittinglayer 22 and the second-type semiconductor layer 23 will be drawn back, and in addition, the second-type electrode 32 is provided on the second-type semiconductor layer 23. - Referring to
FIG. 6 ,FIG. 7 andFIG. 8 , a combined appearance of the at least two light-emitting regions 201 may be of multiple shapes that can be set according to practical use demands, and the two light-emitting regions 201 may be of any one of a fan shape (as shown inFIG. 6 ), a rectangle (as shown inFIG. 7 ) and a polygon (as shown inFIG. 8 ). - As above, compared with the prior art, the present invention has, at least advantages as follows.
- 1. A manner of providing the photo-luminescence material is adopted, and the at least two independently-distinguished light-emitting regions and the at least two independently-controlled circuit structures are cooperatively adopted, so light having two wavelengths may be emitted at least.
- 2. By independently controlling the at least two circuit structures, light intensities of the light having two wavelengths can be further slightly adjusted to adjust color temperatures so as to make wavelengths consistent.
- 3. The circuit structures are provided on the single wafer substrate, processing and manufacturing can be completed at the same time, miniaturization can be achieved, manufacturing costs can be reduced, and demands in use can be met.
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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TW106204258 | 2017-03-27 | ||
TW106204258U | 2017-03-27 | ||
TW106204258U TWM544122U (en) | 2017-03-27 | 2017-03-27 | LED of generating various luminous colors on single wafer |
Publications (2)
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US20180277716A1 true US20180277716A1 (en) | 2018-09-27 |
US10096745B1 US10096745B1 (en) | 2018-10-09 |
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US15/608,584 Active US10096745B1 (en) | 2017-03-27 | 2017-05-30 | Light emitting diode capable of generating different light colors over single wafer |
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US (1) | US10096745B1 (en) |
JP (1) | JP3213056U (en) |
CN (1) | CN207134360U (en) |
TW (1) | TWM544122U (en) |
Cited By (1)
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US11152546B2 (en) * | 2017-08-28 | 2021-10-19 | Nichia Corporation | Light-emitting device |
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TWI768433B (en) | 2020-08-19 | 2022-06-21 | 聯嘉光電股份有限公司 | THREE-IN-ONE RGB mini-LED MANUFACTURING METHOD |
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TWI464921B (en) | 2009-02-25 | 2014-12-11 | Epistar Corp | Light-emitting device with narrow dominant wavelength distribution and method of making the same |
US8390193B2 (en) * | 2008-12-31 | 2013-03-05 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
-
2017
- 2017-03-27 TW TW106204258U patent/TWM544122U/en unknown
- 2017-04-27 CN CN201720453229.XU patent/CN207134360U/en active Active
- 2017-05-30 US US15/608,584 patent/US10096745B1/en active Active
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US11152546B2 (en) * | 2017-08-28 | 2021-10-19 | Nichia Corporation | Light-emitting device |
US11710810B2 (en) | 2017-08-28 | 2023-07-25 | Nichia Corporation | Light-emitting device |
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TWM544122U (en) | 2017-06-21 |
JP3213056U (en) | 2017-10-19 |
US10096745B1 (en) | 2018-10-09 |
CN207134360U (en) | 2018-03-23 |
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