US20180226388A1 - Micro light emitting diode display panel and repair method thereof - Google Patents

Micro light emitting diode display panel and repair method thereof Download PDF

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US20180226388A1
US20180226388A1 US15/508,103 US201715508103A US2018226388A1 US 20180226388 A1 US20180226388 A1 US 20180226388A1 US 201715508103 A US201715508103 A US 201715508103A US 2018226388 A1 US2018226388 A1 US 2018226388A1
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light emitting
micro light
emitting diode
electrically connected
layer
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US10043788B1 (en
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Baixiang Han
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
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    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
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    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
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    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present invention relates to a display technology field, and more particularly to a micro light emitting diode display panel and a repair method thereof.
  • the flat panel device possesses advantages of high image quality, power saving, thin body and wide application scope. Thus, it has been widely applied in various consumer electrical products, such as mobile phone, television, personal digital assistant, digital camera, notebook, laptop, and becomes the major display device.
  • the Micro LED (pLED) display is a kind of display, in which the image display is realized by using a high density, small size LED array integrated on a substrate as a display pixel. Similar with the large size outdoor LED display screen, each pixel can be addressed and individually driven and lighted, the micro LED can be considered as a scaled-down version of the outdoor LED display screen to reduce the pixel dot distance from millimeter level to micron level.
  • the pLED display is a self-luminous display as the same as the organic light emitting diode display. However, the pLED display possesses advantages of better material stability, longer life and no image imprinting in comparison with the OLED display, and is considered to be the biggest competitor of the OLED display.
  • the Micro Transfer Printing skill is currently the main method of manufacturing the pLED display device.
  • the specific manufacture process is: first, growing micro light emitting diodes on the sapphire substrate, and then employing the Laser lift-off (LLO) to separate the micro light emitting diode bare chip from the sapphire substrate, and then, using a patterned polydimethylsiloxane (PDMS) transfer head to adsorb the micro-emitter bare chip from the sapphire substrate and aligning the PDMS head with the receiving substrate, and then, adhering the micro light emitting diode bare chip adsorbed by the PDMS head on the preset position on the receiving substrate, and then removing the PDMS head to accomplish the transfer of the micro light emitting diode bare chip on the receiving substrate, and thus to manufacture the pLED display device.
  • LLO Laser lift-off
  • PDMS patterned polydimethylsiloxane
  • FIG. 1 is a sectional diagram of a micro light emitting diode display panel according to prior art.
  • the panel comprises: a substrate 100 , a gate 200 located on the substrate 100 , a gate insulation layer 300 located on the gate 200 and the substrate 100 , an active layer 400 located on the gate insulation layer 300 on the gate 200 , an interlayer insulation layer 500 located on the active layer 400 and the gate insulation layer 300 , and a source 601 and a drain 602 being spaced on the interlayer insulation layer 500 and contacting with two ends of the active layer 400 respectively, a planarization layer 700 located on the source 601 , the drain 602 and the interlayer insulation layer 500 , an anode 800 located on the planarization layer 700 and electrically connected with the drain 602 , a pixel definition layer 900 located at peripheral edges of the anode 800 and on the planarization layer 700 , a cathode insulation layer 1200 located on the anode 800 , a plurality of micro light emitting diodes 1000 located
  • the anode 800 in the micro light emitting diode display panel is as a whole.
  • the plurality of micro light emitting diodes 1000 are aligned on the anode 800 in order.
  • the cutting point is at the position of X in FIG. 2 and FIG. 1 .
  • the other normal micro light emitting diodes 100 cannot emit light, either.
  • the entire pixel becomes a dark spot to result in a waste of resources and to reduce the display quality.
  • An objective of the present invention is to provide a micro light emitting diode display panel, which can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel and to ensure the repair result of the micro light emitting diode display panel.
  • Another objective of the present invention is to provide a repair method of a micro light emitting diode display panel, which can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel and to ensure the repair result of the micro light emitting diode display panel.
  • the present invention provides a micro light emitting diode display panel, comprising: a substrate and a plurality of pixel units aligned in array on the substrate;
  • each pixel unit comprising: a TFT layer located on the substrate, a planarization layer located on the TFT layer, an anode located on the planarization layer and electrically connected to the TFT layer, a pixel definition layer located at peripheral edges of the anode and on the planarization layer, a cathode insulation layer located on the anode, a plurality of micro light emitting diodes located on the anode and embedded in the cathode insulation layer, and a cathode located on the pixel definition layer, the cathode insulation layer and the plurality of micro light emitting diodes;
  • the anode comprising an anode voltage level input plate electrically connected to the TFT layer, a plurality of electrode plates spaced from the anode voltage level input plate and a plurality of connection lines electrically connected to the electrode plates;
  • an amount of the micro light emitting diodes and an amount of the electrode plates being the same, and one micro light emitting diode being configured on each electrode plate;
  • the anode voltage level input plate being electrically connected to at least two electrode plates through the connection lines, and each electrode plate being electrically connected to at least two other electrode plates through the connection lines, or being electrically connected to at least one other electrode plate and the anode voltage level input plate.
  • Each pixel unit comprises three micro light emitting diodes and three electrode plates, wherein two electrode plates are electrically connected to the other electrode and the anode voltage level input plate through two connection lines, respectively.
  • the other electrode plate is further electrically connected to the anode voltage level input plate through one connection line.
  • the TFT layer comprises: a gate located on the substrate, a gate insulation layer located on the gate and the substrate, an active layer located on the gate insulation layer on the gate, an interlayer insulation layer located on the active layer and the gate insulation layer, and a source and a drain being spaced on the interlayer insulation layer and contacting with two ends of the active layer respectively through a first via and a second via penetrating the interlayer insulation layer.
  • the anode voltage level input plate contacts with the drain through a third via penetrating the planarization layer.
  • the present invention further provides a repair method of a micro light emitting diode display panel, comprising steps of:
  • step S1 providing a micro light emitting diode display panel, and the micro light emitting diode display panel comprising: a substrate and a plurality of pixel units aligned in array on the substrate;
  • each pixel unit comprising: a TFT layer located on the substrate, a planarization layer located on the TFT layer, an anode located on the planarization layer and electrically connected to the TFT layer, a pixel definition layer located at peripheral edges of the anode and on the planarization layer, a cathode insulation layer located on the anode, a plurality of micro light emitting diodes located on the anode and embedded in the cathode insulation layer, and a cathode located on the pixel definition layer, the cathode insulation layer and the plurality of micro light emitting diodes;
  • the anode comprising an anode voltage level input plate electrically connected to the TFT layer, a plurality of electrode plates spaced from the anode voltage level input plate and a plurality of connection lines electrically connected to the electrode plates;
  • an amount of the micro light emitting diodes and an amount of the electrode plates being the same, and one micro light emitting diode being configured on each electrode plate;
  • the anode voltage level input plate being electrically connected to at least two electrode plates through the connection lines, and each electrode plate being electrically connected to at least two other electrode plates through the connection lines, or being electrically connected to at least one other electrode plate and the anode voltage level input plate;
  • Step S2 detecting that one of the plurality of micro light emitting diodes is defective, and determining a position of the defective micro light emitting diode;
  • step S3 cutting all of the connection lines electrically connected to the electrode plate, in which the micro light emitting diode is defective, and individually repairing the defective micro light emitting diode to be a dark spot.
  • Each pixel unit comprises three micro light emitting diodes and three electrode plates, wherein two electrode plates are electrically connected to the other electrode and the anode voltage level input plate through two connection lines, respectively.
  • the other electrode plate is further electrically connected to the anode voltage level input plate through one connection line.
  • the TFT layer comprises: a gate located on the substrate, a gate insulation layer located on the gate and the substrate, an active layer located on the gate insulation layer on the gate, an interlayer insulation layer located on the active layer and the gate insulation layer, and a source and a drain being spaced on the interlayer insulation layer and contacting with two ends of the active layer respectively through a first via and a second via penetrating the interlayer insulation layer.
  • the anode voltage level input plate contacts with the drain through a third via penetrating the planarization layer.
  • the present invention further provides a repair method of a micro light emitting diode display panel, comprising steps of:
  • step S1 providing a micro light emitting diode display panel, and the micro light emitting diode display panel comprising: a substrate and a plurality of pixel units aligned in array on the substrate;
  • each pixel unit comprising: a TFT layer located on the substrate, a planarization layer located on the TFT layer, an anode located on the planarization layer and electrically connected to the TFT layer, a pixel definition layer located at peripheral edges of the anode and on the planarization layer, a cathode insulation layer located on the anode, a plurality of micro light emitting diodes located on the anode and embedded in the cathode insulation layer, and a cathode located on the pixel definition layer, the cathode insulation layer and the plurality of micro light emitting diodes;
  • the anode comprising an anode voltage level input plate electrically connected to the TFT layer, a plurality of electrode plates spaced from the anode voltage level input plate and a plurality of connection lines electrically connected to the electrode plates;
  • an amount of the micro light emitting diodes and an amount of the electrode plates being the same, and one micro light emitting diode being configured on each electrode plate;
  • the anode voltage level input plate being electrically connected to at least two electrode plates through the connection lines, and each electrode plate being electrically connected to at least two other electrode plates through the connection lines, or being electrically connected to at least one other electrode plate and the anode voltage level input plate;
  • Step S2 detecting that one of the plurality of micro light emitting diodes is defective, and determining a position of the defective micro light emitting diode;
  • step S3 cutting all of the connection lines electrically connected to the electrode plate, in which the micro light emitting diode is defective, and individually repairing the defective micro light emitting diode to be a dark spot;
  • each pixel unit comprises three micro light emitting diodes and three electrode plates, wherein two electrode plates are electrically connected to the other electrode and the anode voltage level input plate through two connection lines, respectively;
  • the TFT layer comprises: a gate located on the substrate, a gate insulation layer located on the gate and the substrate, an active layer located on the gate insulation layer on the gate, an interlayer insulation layer located on the active layer and the gate insulation layer, and a source and a drain being spaced on the interlayer insulation layer and contacting with two ends of the active layer respectively through a first via and a second via penetrating the interlayer insulation layer.
  • the present invention provides a micro light emitting diode display panel.
  • the anode of the micro light emitting diode display panel is divided into a plurality of electrode plates which are spaced with one another.
  • the respective electrode plates are electrically connected and integrated through the connection lines.
  • Each electrode plate is correspondingly arranged with one micro light emitting diode.
  • the connection line electrically connected to electrode plate of the micro light emitting diode is cut to individually repair the defective micro light emitting diode to be a dark spot, and other micro light emitting diodes can normally emit light.
  • the present invention can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel and to ensure the repair result of the micro light emitting diode display panel.
  • the repair method of the micro light emitting diode display panel provided by the present invention can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel and to ensure the repair result of the micro light emitting diode display panel.
  • FIG. 1 is a sectional diagram of a micro light emitting diode display panel according to prior art
  • FIG. 2 is a top view diagram of an anode of a micro light emitting diode display panel according to prior art
  • FIG. 3 is a sectional diagram of a micro light emitting diode display panel according to the present invention.
  • FIG. 4 is a top view diagram of an anode of the first embodiment of a micro light emitting diode display panel according to the present invention.
  • FIG. 5 is a top view diagram of an anode of the second embodiment of a micro light emitting diode display panel according to the present invention.
  • FIG. 6 is a top view diagram of an anode of the third embodiment of a micro light emitting diode display panel according to the present invention.
  • FIG. 7 is a top view diagram of an anode of the fourth embodiment of a micro light emitting diode display panel according to the present invention.
  • FIG. 8 is a flowchart of a repair method of a micro light emitting diode display panel according to the present invention.
  • the present invention provides a micro light emitting diode display panel, comprising: a substrate 1 and a plurality of pixel units 2 aligned in array on the substrate 1 ;
  • each pixel unit 2 comprising: a TFT layer 21 located on the substrate 1 , a planarization layer 22 located on the TFT layer 21 , an anode 23 located on the planarization layer 22 and electrically connected to the TFT layer 21 , a pixel definition layer 24 located at peripheral edges of the anode 23 and on the planarization layer 22 , a cathode insulation layer 26 located on the anode 23 , a plurality of micro light emitting diodes 25 located on the anode 23 and embedded in the cathode insulation layer 26 , and a cathode 27 located on the pixel definition layer 24 , the cathode insulation layer 26 and the plurality of micro light emitting diodes 25 ;
  • the anode 23 comprising an anode voltage level input plate 231 electrically connected to the TFT layer 21 , a plurality of electrode plates 232 spaced from the anode voltage level input plate 231 and a plurality of connection lines 233 electrically connected to the electrode plates 232 ;
  • the anode voltage level input plate 231 being electrically connected to at least two electrode plates 232 through the connection lines 233 , and each electrode plate 232 being electrically connected to at least two other electrode plates 232 through the connection lines 233 , or being electrically connected to at least one other electrode plate 232 and the anode voltage level input plate 231 .
  • each pixel unit 2 comprises three micro light emitting diodes 25 and three electrode plates 232 , wherein two electrode plates 232 are electrically connected to the other electrode 232 and the anode voltage level input plate 231 through two connection lines 233 , respectively.
  • the micro light emitting diode 25 can be repaired to be a dark spot as long as cutting the two connection lines 233 electrically connected to electrode plate 232 of the micro light emitting diode 25 .
  • the remaining two micro light emitting diodes 25 still can normally acquire the anode voltage level signal from the anode voltage level input plate 231 , and normally emit light.
  • FIG. 5 is the second embodiment of the present invention.
  • the difference from the first embodiment is that the other electrode plate 232 is further electrically connected to the anode voltage level input plate 231 through one connection line 233 .
  • all of the three electrode plates 232 are electrically connected to the anode voltage level input plate 231 .
  • FIG. 6 is the third embodiment of the present invention.
  • Each pixel unit 2 comprises eight micro light emitting diodes 25 and eight electrode plates 232 .
  • the eight micro light emitting diodes 25 and the eight electrode plates 232 are aligned in a matrix of 3 rows and 3 columns.
  • the seven peripheral electrode plates 232 are connected in series with the anode voltage level input plate 231 in order.
  • the electrode plate 232 in the middle are electrically connected to the anode voltage level input plate 231 and one peripheral electrode plate 232 through two connection lines 233 , respectively.
  • FIG. 7 is the fourth embodiment of the present invention.
  • the fourth embodiment is the improvement of the third embodiment.
  • the electrode plate 232 in the middle are electrically connected to the anode voltage level input plate 231 and three peripheral electrode plate 232 through four connection lines 233 , respectively.
  • the third embodiment can achieve the individual repair to any one of the micro light emitting diodes 25 without influence the normal light emittance of other micro light emitting diodes 25 .
  • the fourth embodiment can achieve the individual repair to any one or two of the micro light emitting diodes 25 without influence the normal light emittance of other micro light emitting diodes 25 .
  • the present invention can further comprises other electrode plate alignments or other connection manners.
  • the anode voltage level input plate 231 are electrically connected to at least two electrode plates 232 through the connection lines 233 , and each electrode plate 232 is electrically connected to at least other two electrode plates 232 through the connection lines, or electrically connected to at least one other electrode plate 232 and the anode voltage level input plate 231 , the objective of the present invention to individually repair the micro light emitting diode 25 can be achieved, and the achievement of the present invention will not be affected.
  • the TFT layer 21 comprises: a gate 211 located on the substrate 1 , a gate insulation layer 212 located on the gate 211 and the substrate 1 , an active layer 213 located on the gate insulation layer 212 on the gate 211 , an interlayer insulation layer 214 located on the active layer 213 and the gate insulation layer 212 , and a source 215 and a drain 216 being spaced on the interlayer insulation layer 214 and contacting with two ends of the active layer 213 respectively through a first via 2141 and a second via 2142 penetrating the interlayer insulation layer 214 .
  • the anode voltage level input plate 231 contacts with the drain 216 through a third via 221 penetrating the planarization layer 22 .
  • the present invention further provides a repair method of a micro light emitting diode display panel, comprising steps of:
  • step S1 providing a micro light emitting diode display panel of the present invention.
  • the specific structure is described as aforementioned. The repeated description is omitted here.
  • Step S2 detecting that one of the plurality of micro light emitting diodes 25 is defective, and determining a position of the defective micro light emitting diode 25 .
  • step S3 cutting all of the connection lines 233 electrically connected to the electrode plate 232 , in which the micro light emitting diode 25 is defective, and individually repairing the defective micro light emitting diode 25 to be a dark spot.
  • connection lines 233 are cut by laser cutting process.
  • the specific cutting points can be the positions of X in FIG. 4 to FIG. 7 .
  • each pixel unit 2 comprises three micro light emitting diodes 25 and three electrode plates 232 , wherein two electrode plates 232 are electrically connected to the other electrode 232 and the anode voltage level input plate 231 through two connection lines 233 , respectively.
  • the micro light emitting diode 25 can be repaired to be a dark spot as long as cutting the two connection lines 233 electrically connected to electrode plate 232 of the micro light emitting diode 25 .
  • the remaining two micro light emitting diodes 25 still can normally acquire the anode voltage level signal from the anode voltage level input plate 231 , and normally emit light.
  • FIG. 4 in the first embodiment of the present invention, each pixel unit 2 comprises three micro light emitting diodes 25 and three electrode plates 232 , wherein two electrode plates 232 are electrically connected to the other electrode 232 and the anode voltage level input plate 231 through two connection lines 233 , respectively.
  • one micro light emitting diode 25 in the middle is defective. What has to be done is cutting the two connection lines 233 electrically connected to electrode plate 232 of the micro light emitting diode 25 .
  • the cutting points can be the positions of X in FIG. 4 .
  • FIG. 5 is the second embodiment of the present invention.
  • the difference from the first embodiment is that the other electrode plate 232 is further electrically connected to the anode voltage level input plate 231 through one connection line 233 .
  • all of the three electrode plates 232 are electrically connected to the anode voltage level input plate 231 .
  • any two micro light emitting diodes 25 are defective, it remains to be possible to cut the four connection lines 233 electrically connected to the two electrode plates 232 of the two micro light emitting diodes 25 for repairing the two micro light emitting diodes 25 to be dark spots, and the remaining one micro light emitting diode 25 still can normally acquire the anode voltage level signal from the anode voltage level input plate 231 .
  • one micro light emitting diode 25 in the middle is defective. What has to be done is cutting the three connection lines 233 electrically connected to electrode plate 232 of the micro light emitting diode 25 .
  • the cutting points can be the positions of X in FIG. 5 .
  • FIG. 6 is the third embodiment of the present invention.
  • Each pixel unit 2 comprises eight micro light emitting diodes 25 and eight electrode plates 232 .
  • the eight micro light emitting diodes 25 and the eight electrode plates 232 are aligned in a matrix of 3 rows and 3 columns.
  • the seven peripheral electrode plates 232 are connected in series with the anode voltage level input plate 231 in order.
  • the electrode plate 232 in the middle are electrically connected to the anode voltage level input plate 231 and one peripheral electrode plate 232 through two connection lines 233 , respectively.
  • FIG. 7 is the fourth embodiment of the present invention.
  • the fourth embodiment is the improvement of the third embodiment.
  • the electrode plate 232 in the middle are electrically connected to the anode voltage level input plate 231 and three peripheral electrode plate 232 through four connection lines 233 , respectively.
  • the third embodiment can achieve the individual repair to any one of the micro light emitting diodes 25 without influence the normal light emittance of other micro light emitting diodes 25 .
  • the fourth embodiment can achieve the individual repair to any one or two of the micro light emitting diodes 25 without influence the normal light emittance of other micro light emitting diodes 25 .
  • the present invention can further comprises other electrode plate alignments or other connection manners.
  • the anode voltage level input plate 231 are electrically connected to at least two electrode plates 232 through the connection lines 233 , and each electrode plate 232 is electrically connected to at least other two electrode plates 232 through the connection lines, or electrically connected to at least one other electrode plate 232 and the anode voltage level input plate 231 , the objective of the present invention to individually repair the micro light emitting diode 25 can be achieved, and the achievement of the present invention will not be affected.
  • the present invention divides the anode into a plurality of electrode plates which are spaced with one another, and the respective electrode plates are electrically connected and integrated through the connection lines.
  • the individual repair to any one of the micro light emitting diodes 25 can be achieved without influence the normal light emittance of other micro light emitting diodes 25 . Meanwhile, the area which should be implemented with laser cut can be clearly found out for convenience of the repair positioning to ensure the repair result.
  • the anode of the micro light emitting diode display panel is divided into a plurality of electrode plates which are spaced with one another.
  • the respective electrode plates are electrically connected and integrated through the connection lines.
  • Each electrode plate is correspondingly arranged with one micro light emitting diode.
  • the present invention can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel and to ensure the repair result of the micro light emitting diode display panel.
  • the repair method of the micro light emitting diode display panel provided by the present invention can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel and to ensure the repair result of the micro light emitting diode display panel.

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Abstract

The present invention provides a micro light emitting diode display panel and a repair method thereof. The anode of the micro light emitting diode display panel is divided into a plurality of electrode plates which are spaced with one another. The respective electrode plates are electrically connected and integrated through the connection lines. Each electrode plate is correspondingly arranged with one micro light emitting diode. When one of the micro light emitting diodes is defective, the connection line electrically connected to electrode plate of the micro light emitting diode is cut to individually repair the defective micro light emitting diode to be a dark spot, and other micro light emitting diodes can normally emit light. The present invention can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel.

Description

    FIELD OF THE INVENTION
  • The present invention relates to a display technology field, and more particularly to a micro light emitting diode display panel and a repair method thereof.
    • BACKGROUND OF THE INVENTION
  • The flat panel device possesses advantages of high image quality, power saving, thin body and wide application scope. Thus, it has been widely applied in various consumer electrical products, such as mobile phone, television, personal digital assistant, digital camera, notebook, laptop, and becomes the major display device.
  • The Micro LED (pLED) display is a kind of display, in which the image display is realized by using a high density, small size LED array integrated on a substrate as a display pixel. Similar with the large size outdoor LED display screen, each pixel can be addressed and individually driven and lighted, the micro LED can be considered as a scaled-down version of the outdoor LED display screen to reduce the pixel dot distance from millimeter level to micron level. The pLED display is a self-luminous display as the same as the organic light emitting diode display. However, the pLED display possesses advantages of better material stability, longer life and no image imprinting in comparison with the OLED display, and is considered to be the biggest competitor of the OLED display.
  • The Micro Transfer Printing skill is currently the main method of manufacturing the pLED display device. The specific manufacture process is: first, growing micro light emitting diodes on the sapphire substrate, and then employing the Laser lift-off (LLO) to separate the micro light emitting diode bare chip from the sapphire substrate, and then, using a patterned polydimethylsiloxane (PDMS) transfer head to adsorb the micro-emitter bare chip from the sapphire substrate and aligning the PDMS head with the receiving substrate, and then, adhering the micro light emitting diode bare chip adsorbed by the PDMS head on the preset position on the receiving substrate, and then removing the PDMS head to accomplish the transfer of the micro light emitting diode bare chip on the receiving substrate, and thus to manufacture the pLED display device.
  • Please refer to FIG. 1, which is a sectional diagram of a micro light emitting diode display panel according to prior art. The panel comprises: a substrate 100, a gate 200 located on the substrate 100, a gate insulation layer 300 located on the gate 200 and the substrate 100, an active layer 400 located on the gate insulation layer 300 on the gate 200, an interlayer insulation layer 500 located on the active layer 400 and the gate insulation layer 300, and a source 601 and a drain 602 being spaced on the interlayer insulation layer 500 and contacting with two ends of the active layer 400 respectively, a planarization layer 700 located on the source 601, the drain 602 and the interlayer insulation layer 500, an anode 800 located on the planarization layer 700 and electrically connected with the drain 602, a pixel definition layer 900 located at peripheral edges of the anode 800 and on the planarization layer 700, a cathode insulation layer 1200 located on the anode 800, a plurality of micro light emitting diodes 1000 located on the anode 800 and embedded in the cathode insulation layer 1200, and a cathode 1100 located on the pixel definition layer 900, the cathode insulation layer 1200 and the plurality of micro light emitting diodes 1000. As shown in FIG. 2, the anode 800 in the micro light emitting diode display panel is as a whole. The plurality of micro light emitting diodes 1000 are aligned on the anode 800 in order. When one micro light emitting diode 100 needs to be repaired, it is necessary to cut off the connection between the anode 800 and the drain 602 for repair. The cutting point is at the position of X in FIG. 2 and FIG. 1. After repair, the other normal micro light emitting diodes 100 cannot emit light, either. The entire pixel becomes a dark spot to result in a waste of resources and to reduce the display quality.
    • SUMMARY OF THE INVENTION
  • An objective of the present invention is to provide a micro light emitting diode display panel, which can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel and to ensure the repair result of the micro light emitting diode display panel.
  • Another objective of the present invention is to provide a repair method of a micro light emitting diode display panel, which can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel and to ensure the repair result of the micro light emitting diode display panel.
  • For realizing the aforesaid objectives, the present invention provides a micro light emitting diode display panel, comprising: a substrate and a plurality of pixel units aligned in array on the substrate;
  • each pixel unit comprising: a TFT layer located on the substrate, a planarization layer located on the TFT layer, an anode located on the planarization layer and electrically connected to the TFT layer, a pixel definition layer located at peripheral edges of the anode and on the planarization layer, a cathode insulation layer located on the anode, a plurality of micro light emitting diodes located on the anode and embedded in the cathode insulation layer, and a cathode located on the pixel definition layer, the cathode insulation layer and the plurality of micro light emitting diodes;
  • the anode comprising an anode voltage level input plate electrically connected to the TFT layer, a plurality of electrode plates spaced from the anode voltage level input plate and a plurality of connection lines electrically connected to the electrode plates;
  • an amount of the micro light emitting diodes and an amount of the electrode plates being the same, and one micro light emitting diode being configured on each electrode plate;
  • the anode voltage level input plate being electrically connected to at least two electrode plates through the connection lines, and each electrode plate being electrically connected to at least two other electrode plates through the connection lines, or being electrically connected to at least one other electrode plate and the anode voltage level input plate.
  • Each pixel unit comprises three micro light emitting diodes and three electrode plates, wherein two electrode plates are electrically connected to the other electrode and the anode voltage level input plate through two connection lines, respectively.
  • The other electrode plate is further electrically connected to the anode voltage level input plate through one connection line.
  • The TFT layer comprises: a gate located on the substrate, a gate insulation layer located on the gate and the substrate, an active layer located on the gate insulation layer on the gate, an interlayer insulation layer located on the active layer and the gate insulation layer, and a source and a drain being spaced on the interlayer insulation layer and contacting with two ends of the active layer respectively through a first via and a second via penetrating the interlayer insulation layer.
  • The anode voltage level input plate contacts with the drain through a third via penetrating the planarization layer.
  • The present invention further provides a repair method of a micro light emitting diode display panel, comprising steps of:
  • step S1, providing a micro light emitting diode display panel, and the micro light emitting diode display panel comprising: a substrate and a plurality of pixel units aligned in array on the substrate;
  • each pixel unit comprising: a TFT layer located on the substrate, a planarization layer located on the TFT layer, an anode located on the planarization layer and electrically connected to the TFT layer, a pixel definition layer located at peripheral edges of the anode and on the planarization layer, a cathode insulation layer located on the anode, a plurality of micro light emitting diodes located on the anode and embedded in the cathode insulation layer, and a cathode located on the pixel definition layer, the cathode insulation layer and the plurality of micro light emitting diodes;
  • the anode comprising an anode voltage level input plate electrically connected to the TFT layer, a plurality of electrode plates spaced from the anode voltage level input plate and a plurality of connection lines electrically connected to the electrode plates;
  • an amount of the micro light emitting diodes and an amount of the electrode plates being the same, and one micro light emitting diode being configured on each electrode plate;
  • the anode voltage level input plate being electrically connected to at least two electrode plates through the connection lines, and each electrode plate being electrically connected to at least two other electrode plates through the connection lines, or being electrically connected to at least one other electrode plate and the anode voltage level input plate;
  • Step S2, detecting that one of the plurality of micro light emitting diodes is defective, and determining a position of the defective micro light emitting diode;
  • step S3, cutting all of the connection lines electrically connected to the electrode plate, in which the micro light emitting diode is defective, and individually repairing the defective micro light emitting diode to be a dark spot.
  • Each pixel unit comprises three micro light emitting diodes and three electrode plates, wherein two electrode plates are electrically connected to the other electrode and the anode voltage level input plate through two connection lines, respectively.
  • The other electrode plate is further electrically connected to the anode voltage level input plate through one connection line.
  • The TFT layer comprises: a gate located on the substrate, a gate insulation layer located on the gate and the substrate, an active layer located on the gate insulation layer on the gate, an interlayer insulation layer located on the active layer and the gate insulation layer, and a source and a drain being spaced on the interlayer insulation layer and contacting with two ends of the active layer respectively through a first via and a second via penetrating the interlayer insulation layer.
  • The anode voltage level input plate contacts with the drain through a third via penetrating the planarization layer.
  • The present invention further provides a repair method of a micro light emitting diode display panel, comprising steps of:
  • step S1, providing a micro light emitting diode display panel, and the micro light emitting diode display panel comprising: a substrate and a plurality of pixel units aligned in array on the substrate;
  • each pixel unit comprising: a TFT layer located on the substrate, a planarization layer located on the TFT layer, an anode located on the planarization layer and electrically connected to the TFT layer, a pixel definition layer located at peripheral edges of the anode and on the planarization layer, a cathode insulation layer located on the anode, a plurality of micro light emitting diodes located on the anode and embedded in the cathode insulation layer, and a cathode located on the pixel definition layer, the cathode insulation layer and the plurality of micro light emitting diodes;
  • the anode comprising an anode voltage level input plate electrically connected to the TFT layer, a plurality of electrode plates spaced from the anode voltage level input plate and a plurality of connection lines electrically connected to the electrode plates;
  • an amount of the micro light emitting diodes and an amount of the electrode plates being the same, and one micro light emitting diode being configured on each electrode plate;
  • the anode voltage level input plate being electrically connected to at least two electrode plates through the connection lines, and each electrode plate being electrically connected to at least two other electrode plates through the connection lines, or being electrically connected to at least one other electrode plate and the anode voltage level input plate;
  • Step S2, detecting that one of the plurality of micro light emitting diodes is defective, and determining a position of the defective micro light emitting diode;
  • step S3, cutting all of the connection lines electrically connected to the electrode plate, in which the micro light emitting diode is defective, and individually repairing the defective micro light emitting diode to be a dark spot;
  • wherein each pixel unit comprises three micro light emitting diodes and three electrode plates, wherein two electrode plates are electrically connected to the other electrode and the anode voltage level input plate through two connection lines, respectively;
  • wherein the TFT layer comprises: a gate located on the substrate, a gate insulation layer located on the gate and the substrate, an active layer located on the gate insulation layer on the gate, an interlayer insulation layer located on the active layer and the gate insulation layer, and a source and a drain being spaced on the interlayer insulation layer and contacting with two ends of the active layer respectively through a first via and a second via penetrating the interlayer insulation layer.
  • The benefits of the present invention are: the present invention provides a micro light emitting diode display panel. The anode of the micro light emitting diode display panel is divided into a plurality of electrode plates which are spaced with one another. The respective electrode plates are electrically connected and integrated through the connection lines. Each electrode plate is correspondingly arranged with one micro light emitting diode. When one of the micro light emitting diodes is defective, the connection line electrically connected to electrode plate of the micro light emitting diode is cut to individually repair the defective micro light emitting diode to be a dark spot, and other micro light emitting diodes can normally emit light. The present invention can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel and to ensure the repair result of the micro light emitting diode display panel. The repair method of the micro light emitting diode display panel provided by the present invention can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel and to ensure the repair result of the micro light emitting diode display panel.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • In order to better understand the characteristics and technical aspect of the invention, please refer to the following detailed description of the present invention is concerned with the diagrams, however, provide reference to the accompanying drawings and description only and is not intended to be limiting of the invention.
  • In drawings,
  • FIG. 1 is a sectional diagram of a micro light emitting diode display panel according to prior art;
  • FIG. 2 is a top view diagram of an anode of a micro light emitting diode display panel according to prior art;
  • FIG. 3 is a sectional diagram of a micro light emitting diode display panel according to the present invention;
  • FIG. 4 is a top view diagram of an anode of the first embodiment of a micro light emitting diode display panel according to the present invention;
  • FIG. 5 is a top view diagram of an anode of the second embodiment of a micro light emitting diode display panel according to the present invention;
  • FIG. 6 is a top view diagram of an anode of the third embodiment of a micro light emitting diode display panel according to the present invention;
  • FIG. 7 is a top view diagram of an anode of the fourth embodiment of a micro light emitting diode display panel according to the present invention;
  • FIG. 8 is a flowchart of a repair method of a micro light emitting diode display panel according to the present invention.
    •  DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
  • For better explaining the technical solution and the effect of the present invention, the present invention will be further described in detail with the accompanying drawings and the specific embodiments.
  • Please refer to FIG. 3. The present invention provides a micro light emitting diode display panel, comprising: a substrate 1 and a plurality of pixel units 2 aligned in array on the substrate 1;
  • each pixel unit 2 comprising: a TFT layer 21 located on the substrate 1, a planarization layer 22 located on the TFT layer 21, an anode 23 located on the planarization layer 22 and electrically connected to the TFT layer 21, a pixel definition layer 24 located at peripheral edges of the anode 23 and on the planarization layer 22, a cathode insulation layer 26 located on the anode 23, a plurality of micro light emitting diodes 25 located on the anode 23 and embedded in the cathode insulation layer 26, and a cathode 27 located on the pixel definition layer 24, the cathode insulation layer 26 and the plurality of micro light emitting diodes 25;
  • the anode 23 comprising an anode voltage level input plate 231 electrically connected to the TFT layer 21, a plurality of electrode plates 232 spaced from the anode voltage level input plate 231 and a plurality of connection lines 233 electrically connected to the electrode plates 232;
  • an amount of the micro light emitting diodes 25 and an amount of the electrode plates 232 being the same, and one micro light emitting diode 25 being configured on each electrode plate 25;
  • the anode voltage level input plate 231 being electrically connected to at least two electrode plates 232 through the connection lines 233, and each electrode plate 232 being electrically connected to at least two other electrode plates 232 through the connection lines 233, or being electrically connected to at least one other electrode plate 232 and the anode voltage level input plate 231.
  • Specifically, as shown in FIG. 4, in the first embodiment of the present invention, each pixel unit 2 comprises three micro light emitting diodes 25 and three electrode plates 232, wherein two electrode plates 232 are electrically connected to the other electrode 232 and the anode voltage level input plate 231 through two connection lines 233, respectively. When any one of the micro light emitting diodes 25 is defective, the micro light emitting diode 25 can be repaired to be a dark spot as long as cutting the two connection lines 233 electrically connected to electrode plate 232 of the micro light emitting diode 25. The remaining two micro light emitting diodes 25 still can normally acquire the anode voltage level signal from the anode voltage level input plate 231, and normally emit light.
  • Specifically, as shown in FIG. 5, FIG. 5 is the second embodiment of the present invention. The difference from the first embodiment is that the other electrode plate 232 is further electrically connected to the anode voltage level input plate 231 through one connection line 233. Namely, all of the three electrode plates 232 are electrically connected to the anode voltage level input plate 231. Then, what is better than the first embodiment is that when any two micro light emitting diodes 25 are defective, it remains to be possible to cut the four connection lines 233 electrically connected to the two electrode plates 232 of the two micro light emitting diodes 25 for repairing the two micro light emitting diodes 25 to be dark spots, and the remaining one micro light emitting diode 25 still can normally acquire the anode voltage level signal from the anode voltage level input plate 231.
  • Specifically, as shown in FIG. 6, FIG. 6 is the third embodiment of the present invention. Each pixel unit 2 comprises eight micro light emitting diodes 25 and eight electrode plates 232. The eight micro light emitting diodes 25 and the eight electrode plates 232 are aligned in a matrix of 3 rows and 3 columns. The seven peripheral electrode plates 232 are connected in series with the anode voltage level input plate 231 in order. The electrode plate 232 in the middle are electrically connected to the anode voltage level input plate 231 and one peripheral electrode plate 232 through two connection lines 233, respectively. Besides, FIG. 7 is the fourth embodiment of the present invention. The fourth embodiment is the improvement of the third embodiment. The electrode plate 232 in the middle are electrically connected to the anode voltage level input plate 231 and three peripheral electrode plate 232 through four connection lines 233, respectively. The third embodiment can achieve the individual repair to any one of the micro light emitting diodes 25 without influence the normal light emittance of other micro light emitting diodes 25. The fourth embodiment can achieve the individual repair to any one or two of the micro light emitting diodes 25 without influence the normal light emittance of other micro light emitting diodes 25.
  • It can be understood that the present invention can further comprises other electrode plate alignments or other connection manners. As long as the anode voltage level input plate 231 are electrically connected to at least two electrode plates 232 through the connection lines 233, and each electrode plate 232 is electrically connected to at least other two electrode plates 232 through the connection lines, or electrically connected to at least one other electrode plate 232 and the anode voltage level input plate 231, the objective of the present invention to individually repair the micro light emitting diode 25 can be achieved, and the achievement of the present invention will not be affected.
  • Specifically, the TFT layer 21 comprises: a gate 211 located on the substrate 1, a gate insulation layer 212 located on the gate 211 and the substrate 1, an active layer 213 located on the gate insulation layer 212 on the gate 211, an interlayer insulation layer 214 located on the active layer 213 and the gate insulation layer 212, and a source 215 and a drain 216 being spaced on the interlayer insulation layer 214 and contacting with two ends of the active layer 213 respectively through a first via 2141 and a second via 2142 penetrating the interlayer insulation layer 214. The anode voltage level input plate 231 contacts with the drain 216 through a third via 221 penetrating the planarization layer 22.
  • Please refer to FIG. 8, on the basis of the aforesaid micro light emitting diode display panel, the present invention further provides a repair method of a micro light emitting diode display panel, comprising steps of:
  • step S1, providing a micro light emitting diode display panel of the present invention. The specific structure is described as aforementioned. The repeated description is omitted here.
  • Step S2, detecting that one of the plurality of micro light emitting diodes 25 is defective, and determining a position of the defective micro light emitting diode 25.
  • step S3, cutting all of the connection lines 233 electrically connected to the electrode plate 232, in which the micro light emitting diode 25 is defective, and individually repairing the defective micro light emitting diode 25 to be a dark spot.
  • Specifically, in step S3, the connection lines 233 are cut by laser cutting process. The specific cutting points can be the positions of X in FIG. 4 to FIG. 7.
  • Specifically, as shown in FIG. 4, in the first embodiment of the present invention, each pixel unit 2 comprises three micro light emitting diodes 25 and three electrode plates 232, wherein two electrode plates 232 are electrically connected to the other electrode 232 and the anode voltage level input plate 231 through two connection lines 233, respectively. When any one of the micro light emitting diodes 25 is defective, the micro light emitting diode 25 can be repaired to be a dark spot as long as cutting the two connection lines 233 electrically connected to electrode plate 232 of the micro light emitting diode 25. The remaining two micro light emitting diodes 25 still can normally acquire the anode voltage level signal from the anode voltage level input plate 231, and normally emit light. As an illustration in FIG. 4, one micro light emitting diode 25 in the middle is defective. What has to be done is cutting the two connection lines 233 electrically connected to electrode plate 232 of the micro light emitting diode 25. The cutting points can be the positions of X in FIG. 4.
  • Specifically, as shown in FIG. 5, FIG. 5 is the second embodiment of the present invention. The difference from the first embodiment is that the other electrode plate 232 is further electrically connected to the anode voltage level input plate 231 through one connection line 233. Namely, all of the three electrode plates 232 are electrically connected to the anode voltage level input plate 231. Then, what is better than the first embodiment is that when any two micro light emitting diodes 25 are defective, it remains to be possible to cut the four connection lines 233 electrically connected to the two electrode plates 232 of the two micro light emitting diodes 25 for repairing the two micro light emitting diodes 25 to be dark spots, and the remaining one micro light emitting diode 25 still can normally acquire the anode voltage level signal from the anode voltage level input plate 231. As an illustration in FIG. 5, one micro light emitting diode 25 in the middle is defective. What has to be done is cutting the three connection lines 233 electrically connected to electrode plate 232 of the micro light emitting diode 25. The cutting points can be the positions of X in FIG. 5.
  • Specifically, as shown in FIG. 6, FIG. 6 is the third embodiment of the present invention. Each pixel unit 2 comprises eight micro light emitting diodes 25 and eight electrode plates 232. The eight micro light emitting diodes 25 and the eight electrode plates 232 are aligned in a matrix of 3 rows and 3 columns. The seven peripheral electrode plates 232 are connected in series with the anode voltage level input plate 231 in order. The electrode plate 232 in the middle are electrically connected to the anode voltage level input plate 231 and one peripheral electrode plate 232 through two connection lines 233, respectively. Besides, FIG. 7 is the fourth embodiment of the present invention. The fourth embodiment is the improvement of the third embodiment. The electrode plate 232 in the middle are electrically connected to the anode voltage level input plate 231 and three peripheral electrode plate 232 through four connection lines 233, respectively. The third embodiment can achieve the individual repair to any one of the micro light emitting diodes 25 without influence the normal light emittance of other micro light emitting diodes 25. The fourth embodiment can achieve the individual repair to any one or two of the micro light emitting diodes 25 without influence the normal light emittance of other micro light emitting diodes 25.
  • It can be understood that the present invention can further comprises other electrode plate alignments or other connection manners. As long as the anode voltage level input plate 231 are electrically connected to at least two electrode plates 232 through the connection lines 233, and each electrode plate 232 is electrically connected to at least other two electrode plates 232 through the connection lines, or electrically connected to at least one other electrode plate 232 and the anode voltage level input plate 231, the objective of the present invention to individually repair the micro light emitting diode 25 can be achieved, and the achievement of the present invention will not be affected.
  • Specifically, the present invention divides the anode into a plurality of electrode plates which are spaced with one another, and the respective electrode plates are electrically connected and integrated through the connection lines. The individual repair to any one of the micro light emitting diodes 25 can be achieved without influence the normal light emittance of other micro light emitting diodes 25. Meanwhile, the area which should be implemented with laser cut can be clearly found out for convenience of the repair positioning to ensure the repair result.
  • In conclusion, in the micro light emitting diode display panel provided by the present invention, the anode of the micro light emitting diode display panel is divided into a plurality of electrode plates which are spaced with one another. The respective electrode plates are electrically connected and integrated through the connection lines. Each electrode plate is correspondingly arranged with one micro light emitting diode. When one of the micro light emitting diodes is defective, the connection line electrically connected to electrode plate of the micro light emitting diode is cut to individually repair the defective micro light emitting diode to be a dark spot, and other micro light emitting diodes can normally emit light. The present invention can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel and to ensure the repair result of the micro light emitting diode display panel. The repair method of the micro light emitting diode display panel provided by the present invention can simplify a repair process of the micro light emitting diode display panel to promote the success rate of the repair of the micro light emitting diode display panel and to ensure the repair result of the micro light emitting diode display panel.
  • Above are only specific embodiments of the present invention, the scope of the present invention is not limited to this, and to any persons who are skilled in the art, change or replacement which is easily derived should be covered by the protected scope of the invention. Thus, the protected scope of the invention should go by the subject claims.

Claims (13)

What is claimed is:
1. A micro light emitting diode display panel, comprising: a substrate and a plurality of pixel units aligned in array on the substrate;
each pixel unit comprising: a TFT layer located on the substrate, a planarization layer located on the TFT layer, an anode located on the planarization layer and electrically connected to the TFT layer, a pixel definition layer located at peripheral edges of the anode and on the planarization layer, a cathode insulation layer located on the anode, a plurality of micro light emitting diodes located on the anode and embedded in the cathode insulation layer, and a cathode located on the pixel definition layer, the cathode insulation layer and the plurality of micro light emitting diodes;
the anode comprising an anode voltage level input plate electrically connected to the TFT layer, a plurality of electrode plates spaced from the anode voltage level input plate and a plurality of connection lines electrically connected to the electrode plates;
an amount of the micro light emitting diodes and an amount of the electrode plates being the same, and one micro light emitting diode being configured on each electrode plate;
the anode voltage level input plate being electrically connected to at least two electrode plates through the connection lines, and each electrode plate being electrically connected to at least two other electrode plates through the connection lines, or being electrically connected to at least one other electrode plate and the anode voltage level input plate.
2. The micro light emitting diode display panel according to claim 1, wherein each pixel unit comprises three micro light emitting diodes and three electrode plates, wherein two electrode plates are electrically connected to the other electrode and the anode voltage level input plate through two connection lines, respectively.
3. The micro light emitting diode display panel according to claim 2, wherein the other electrode plate is further electrically connected to the anode voltage level input plate through one connection line.
4. The micro light emitting diode display panel according to claim 1, wherein the TFT layer comprises: a gate located on the substrate, a gate insulation layer located on the gate and the substrate, an active layer located on the gate insulation layer on the gate, an interlayer insulation layer located on the active layer and the gate insulation layer, and a source and a drain being spaced on the interlayer insulation layer and contacting with two ends of the active layer respectively through a first via and a second via penetrating the interlayer insulation layer.
5. The micro light emitting diode display panel according to claim 4, wherein the anode voltage level input plate contacts with the drain through a third via penetrating the planarization layer.
6. A repair method of a micro light emitting diode display panel, comprising steps of:
step S1, providing a micro light emitting diode display panel, and the micro light emitting diode display panel comprising: a substrate and a plurality of pixel units aligned in array on the substrate;
each pixel unit comprising: a TFT layer located on the substrate, a planarization layer located on the TFT layer, an anode located on the planarization layer and electrically connected to the TFT layer, a pixel definition layer located at peripheral edges of the anode and on the planarization layer, a cathode insulation layer located on the anode, a plurality of micro light emitting diodes located on the anode and embedded in the cathode insulation layer, and a cathode located on the pixel definition layer, the cathode insulation layer and the plurality of micro light emitting diodes;
the anode comprising an anode voltage level input plate electrically connected to the TFT layer, a plurality of electrode plates spaced from the anode voltage level input plate and a plurality of connection lines electrically connected to the electrode plates;
an amount of the micro light emitting diodes and an amount of the electrode plates being the same, and one micro light emitting diode being configured on each electrode plate;
the anode voltage level input plate being electrically connected to at least two electrode plates through the connection lines, and each electrode plate being electrically connected to at least two other electrode plates through the connection lines, or being electrically connected to at least one other electrode plate and the anode voltage level input plate;
Step S2, detecting that one of the plurality of micro light emitting diodes is defective, and determining a position of the defective micro light emitting diode;
step S3, cutting all of the connection lines electrically connected to the electrode plate, in which the micro light emitting diode is defective, and individually repairing the defective micro light emitting diode to be a dark spot.
7. The repair method of the micro light emitting diode display panel according to claim 6, wherein each pixel unit comprises three micro light emitting diodes and three electrode plates, wherein two electrode plates are electrically connected to the other electrode and the anode voltage level input plate through two connection lines, respectively.
8. The repair method of the micro light emitting diode display panel according to claim 7, wherein the other electrode plate is further electrically connected to the anode voltage level input plate through one connection line.
9. The repair method of the micro light emitting diode display panel according to claim 6, wherein the TFT layer comprises: a gate located on the substrate, a gate insulation layer located on the gate and the substrate, an active layer located on the gate insulation layer on the gate, an interlayer insulation layer located on the active layer and the gate insulation layer, and a source and a drain being spaced on the interlayer insulation layer and contacting with two ends of the active layer respectively through a first via and a second via penetrating the interlayer insulation layer.
10. The repair method of the micro light emitting diode display panel according to claim 9, wherein the anode voltage level input plate contacts with the drain through a third via penetrating the planarization layer.
11. A repair method of a micro light emitting diode display panel, comprising steps of:
step S1, providing a micro light emitting diode display panel, and the micro light emitting diode display panel comprising: a substrate and a plurality of pixel units aligned in array on the substrate;
each pixel unit comprising: a TFT layer located on the substrate, a planarization layer located on the TFT layer, an anode located on the planarization layer and electrically connected to the TFT layer, a pixel definition layer located at peripheral edges of the anode and on the planarization layer, a cathode insulation layer located on the anode, a plurality of micro light emitting diodes located on the anode and embedded in the cathode insulation layer, and a cathode located on the pixel definition layer, the cathode insulation layer and the plurality of micro light emitting diodes;
the anode comprising an anode voltage level input plate electrically connected to the TFT layer, a plurality of electrode plates spaced from the anode voltage level input plate and a plurality of connection lines electrically connected to the electrode plates;
an amount of the micro light emitting diodes and an amount of the electrode plates being the same, and one micro light emitting diode being configured on each electrode plate;
the anode voltage level input plate being electrically connected to at least two electrode plates through the connection lines, and each electrode plate being electrically connected to at least two other electrode plates through the connection lines, or being electrically connected to at least one other electrode plate and the anode voltage level input plate;
Step S2, detecting that one of the plurality of micro light emitting diodes is defective, and determining a position of the defective micro light emitting diode;
step S3, cutting all of the connection lines electrically connected to the electrode plate, in which the micro light emitting diode is defective, and individually repairing the defective micro light emitting diode to be a dark spot;
wherein each pixel unit comprises three micro light emitting diodes and three electrode plates, wherein two electrode plates are electrically connected to the other electrode and the anode voltage level input plate through two connection lines, respectively;
wherein the TFT layer comprises: a gate located on the substrate, a gate insulation layer located on the gate and the substrate, an active layer located on the gate insulation layer on the gate, an interlayer insulation layer located on the active layer and the gate insulation layer, and a source and a drain being spaced on the interlayer insulation layer and contacting with two ends of the active layer respectively through a first via and a second via penetrating the interlayer insulation layer.
12. The repair method of the micro light emitting diode display panel according to claim 11, wherein the other electrode plate is further electrically connected to the anode voltage level input plate through one connection line.
13. The repair method of the micro light emitting diode display panel according to claim 11, wherein the anode voltage level input plate contacts with the drain through a third via penetrating the planarization layer.
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020153767A1 (en) * 2019-01-22 2020-07-30 Samsung Electronics Co., Ltd. Display module and repairing method of the same
US10867971B2 (en) 2018-12-12 2020-12-15 Au Optronics Corporation Light emitting diode panel
US10867875B2 (en) 2019-01-07 2020-12-15 Au Optronics Corporation Pixel structure and repairing method thereof
WO2021029615A1 (en) * 2019-08-09 2021-02-18 Samsung Electronics Co., Ltd. Display apparatus and manufacturing method thereof
WO2021059783A1 (en) * 2019-09-24 2021-04-01 株式会社ジャパンディスプレイ Display device repair method and display device
WO2022025394A1 (en) * 2020-07-29 2022-02-03 삼성전자주식회사 Display module
WO2022043195A1 (en) * 2020-08-28 2022-03-03 Aledia Method for treating an optoelectronic device
US11335224B2 (en) 2019-05-14 2022-05-17 Boe Technology Group Co., Ltd. Pixel circuit, driving method thereof, and display device
WO2023080738A1 (en) * 2021-11-08 2023-05-11 삼성전자주식회사 Display panel, method for manufacturing same, and electronic device comprising same

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018102044A1 (en) * 2018-01-30 2019-08-01 Osram Opto Semiconductors Gmbh OPTOELECTRONIC CIRCUIT ARRANGEMENT AND METHOD FOR REPAIRING AN OPTOELECTRONIC CIRCUIT ARRANGEMENT
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CN109741684B (en) * 2019-01-07 2021-03-12 京东方科技集团股份有限公司 Circuit substrate, display panel and manufacturing method
KR20200091347A (en) * 2019-01-22 2020-07-30 삼성전자주식회사 Display module and repairing method of display module
KR20200104060A (en) * 2019-02-26 2020-09-03 (주)포인트엔지니어링 Micro led transfer method and display device using the same
US11152540B2 (en) * 2019-07-29 2021-10-19 Lextar Electronics Corporation Light emitting diode structure and method of manufacturing thereof
JP2021043378A (en) * 2019-09-12 2021-03-18 株式会社ジャパンディスプレイ Display and method for manufacturing display
CN111081697A (en) * 2019-12-31 2020-04-28 广东晶科电子股份有限公司 Micro light-emitting diode module, display module and repairing method thereof
CN111180499A (en) * 2020-02-17 2020-05-19 京东方科技集团股份有限公司 Pixel structure, display panel and repairing method thereof
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CN111668233B (en) * 2020-06-08 2023-06-30 Tcl华星光电技术有限公司 Display panel and preparation method thereof
CN111798764B (en) * 2020-06-12 2022-07-05 福州大学 Mu LED pixel unit structure and display device
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CN112435594A (en) * 2020-11-30 2021-03-02 南京中电熊猫液晶显示科技有限公司 Micro LED backboard and repairing method thereof
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CN112802942A (en) * 2020-12-31 2021-05-14 厦门天马微电子有限公司 Display panel, preparation method and display device
US20220352236A1 (en) * 2021-04-30 2022-11-03 Samsung Display Co., Ltd. Display device
CN113327530B (en) * 2021-05-27 2022-06-03 武汉天马微电子有限公司 Display panel, repairing method thereof and display device
CN115440873A (en) * 2022-09-01 2022-12-06 闻泰通讯股份有限公司 Micro light-emitting diode display panel and electronic equipment

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2973715B1 (en) * 2013-03-15 2021-10-27 Apple Inc. Light emitting diode display with redundancy scheme
US8791474B1 (en) * 2013-03-15 2014-07-29 LuxVue Technology Corporation Light emitting diode display with redundancy scheme
US8987765B2 (en) * 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
US9111464B2 (en) * 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US20160351548A1 (en) * 2015-05-28 2016-12-01 Mikro Mesa Technology Co., Ltd. Light emitting diode display device and manufacturing method thereof
US10535296B2 (en) * 2015-06-10 2020-01-14 Apple Inc. Display panel redundancy schemes
CN105518888B (en) * 2015-09-09 2018-06-12 歌尔股份有限公司 Restorative procedure, manufacturing method, device and the electronic equipment of micro- light emitting diode
EP3262694B1 (en) * 2015-10-20 2019-08-21 Goertek. Inc Method for transferring micro-leds and method for manufacturing micro-led device
TWI657563B (en) * 2015-12-15 2019-04-21 優顯科技股份有限公司 Opto-electronic apparatus and manufacturing method thereof
CN106098697B (en) * 2016-06-15 2019-04-02 深圳市华星光电技术有限公司 Micro- LED display panel and preparation method thereof

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10867971B2 (en) 2018-12-12 2020-12-15 Au Optronics Corporation Light emitting diode panel
US10867875B2 (en) 2019-01-07 2020-12-15 Au Optronics Corporation Pixel structure and repairing method thereof
WO2020153767A1 (en) * 2019-01-22 2020-07-30 Samsung Electronics Co., Ltd. Display module and repairing method of the same
US11335224B2 (en) 2019-05-14 2022-05-17 Boe Technology Group Co., Ltd. Pixel circuit, driving method thereof, and display device
WO2021029615A1 (en) * 2019-08-09 2021-02-18 Samsung Electronics Co., Ltd. Display apparatus and manufacturing method thereof
US11444066B2 (en) 2019-08-09 2022-09-13 Samsung Electronics Co., Ltd. Display apparatus and manufacturing method thereof
TWI756839B (en) * 2019-09-24 2022-03-01 日商日本顯示器股份有限公司 Display device repairing method and display device
WO2021059783A1 (en) * 2019-09-24 2021-04-01 株式会社ジャパンディスプレイ Display device repair method and display device
US20220215784A1 (en) * 2019-09-24 2022-07-07 Japan Display Inc. Method for repairing display device and display device
US12080206B2 (en) * 2019-09-24 2024-09-03 Japan Display Inc. Method for repairing display device and display device
WO2022025394A1 (en) * 2020-07-29 2022-02-03 삼성전자주식회사 Display module
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