CN113130458A - Light-emitting unit, backlight structure, display panel and manufacturing method of light-emitting source - Google Patents
Light-emitting unit, backlight structure, display panel and manufacturing method of light-emitting source Download PDFInfo
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
The invention is applicable to the technical field of display, and provides a light-emitting unit, a backlight structure, a display panel and a manufacturing method of a light-emitting source. The embodiment of the invention provides a light-emitting unit comprising a first light-emitting source and a second light-emitting source, wherein the first light-emitting source comprises a first light-emitting chip and a color conversion layer covering the first light-emitting chip, the second light-emitting source comprises a second light-emitting chip, and light emitted by the first light-emitting chip is mixed with light emitted by the second light-emitting chip after passing through the color conversion layer to obtain white light.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a light-emitting unit, a backlight structure, a display panel and a manufacturing method of a light-emitting source.
Background
With the continuous development of display technology, various types of display devices are developed, which brings great convenience to daily production and life of people. The existing display device usually adopts LEDs of three colors (red, green and blue) as backlight sources to form a backlight module, so that the backlight module can emit full-color light, and the LED backlight sources of the three colors can be independently controlled, so that the display device has better color viewing angle performance and higher color gamut, but has a complex structure and higher cost.
Disclosure of Invention
In view of this, embodiments of the present invention provide a light emitting unit, a backlight structure, a display panel and a method for manufacturing a light emitting source, so as to solve the problem of high cost of the conventional backlight structure.
A first aspect of embodiments of the present invention provides a light emitting unit, comprising: the white light source comprises a first light emitting source and a second light emitting source, wherein the first light emitting source comprises a first light emitting chip and a color conversion layer covering the first light emitting chip, the second light emitting source comprises a second light emitting chip, and light rays emitted by the first light emitting chip are mixed with light rays emitted by the second light emitting chip after passing through the color conversion layer to obtain white light.
In one embodiment, the first light emitting chip is a blue light emitting chip, the second light emitting chip is a green light emitting chip, and the color conversion layer is a red conversion layer.
In one embodiment, the light emitted by the blue light chip after passing through the red conversion layer is blue light and red light, and the light intensity ratio between the blue light and the red light is as follows: 1:1 to 1: 10.
In one embodiment, the total number of photons per unit time of the blue light is N x exp (-alpha x d), the total number of photons per unit time of the red light is eta x N (1-exp (-alpha x d)), and the ratio of the total number of photons per unit time of the red light to the total number of photons per unit time of the blue light is eta (exp (alpha x d) -1), where N is the number of photons emitted per unit time of the blue light chip, alpha is the absorption coefficient of the red conversion layer for blue light, d is the thickness of the red conversion layer, and eta is the light conversion rate of the red conversion layer.
In one embodiment, the red conversion layer comprises: the fluorescent powder comprises silica gel and potassium fluosilicate, wherein the mass percentage of the potassium fluosilicate fluorescent powder is 10-20%.
In one embodiment, the first light emitting chip is a blue light emitting chip, the second light emitting chip is a red light emitting chip, and the color conversion layer is a green conversion layer.
In one embodiment, the first light emitting chip is a green light emitting chip, the second light emitting chip is a blue light emitting chip, and the color conversion layer is a red conversion layer.
In one embodiment, the first light emitting chip and the second light emitting chip are both blue light chips, the color conversion layer includes a green conversion layer and a red conversion layer, and the red conversion layer and the green conversion layer are spliced.
In one embodiment, the first light emitting chip is a cyan LED chip, the second light emitting chip is a magenta LED chip, and the color conversion layer is a yellow conversion layer.
In one embodiment, the light emitting unit further includes: a first encapsulation layer encapsulating the first light emitting source.
In one embodiment, the light emitting unit further includes: and the second packaging layer wraps the first luminous source and the second luminous source.
A second aspect of the embodiments of the present invention provides a backlight structure, including a plurality of light emitting units according to the first aspect of the embodiments of the present invention, wherein the plurality of light emitting units are arranged in an array on a back plate or a PCB.
In one embodiment, in each of the light emitting units, the anode of the first light emitting source and the anode of the second light emitting source are connected to form a column driving signal input terminal of the light emitting unit, and the cathode of the first light emitting source and the cathode of the second light emitting source are connected to form a row driving signal input terminal of the light emitting unit;
or, in each of the light emitting units, an anode of the first light emitting source is used for accessing a first power signal, an anode of the second light emitting source is used for accessing a second power signal, a cathode of the first light emitting source is connected with a first input end of the transistor memory, a cathode of the second light emitting source is connected with a second input end of the transistor memory, a controlled end of the transistor memory forms a row driving signal input end of the light emitting unit, a third input end of the transistor memory forms a first column driving signal input end of the light emitting unit, a fourth input end of the transistor memory forms a second column driving signal input end of the light emitting unit, and an output end of the transistor memory is grounded.
A third aspect of embodiments of the present invention provides a display panel including the backlight structure according to the second aspect of embodiments of the present invention.
A fourth aspect of the embodiments of the present invention provides a method for manufacturing a light source, including:
growing an epitaxial layer on a substrate and manufacturing a plurality of light-emitting chips, wherein the light-emitting chips are arranged at intervals;
transferring the manufactured light-emitting chips to a crystal expansion film and carrying out film expansion treatment;
transferring the plurality of light emitting chips subjected to the film expanding treatment to a chip substrate;
growing a color conversion layer on the chip substrate while covering each of the light emitting chips;
and cutting the chip substrate of the light-emitting chip covered with the color conversion layer to obtain a plurality of light-emitting sources.
In one embodiment, before the step of cutting the chip substrate of the light emitting chip covered with the color conversion layer to obtain the plurality of light emitting sources, the method includes:
and manufacturing a water oxygen protective layer on the color conversion layer.
In a first aspect of the embodiments of the present invention, a light emitting unit including a first light emitting source and a second light emitting source is provided, where the first light emitting source includes a first light emitting chip and a color conversion layer covering the first light emitting chip, and the second light emitting source includes a second light emitting chip, and light emitted from the first light emitting chip is mixed with light emitted from the second light emitting chip after passing through the color conversion layer to obtain white light, so that the number of light emitting chips in the light emitting unit can be reduced, the structure of the light emitting unit is simplified, and the manufacturing cost of the light emitting unit is saved.
In a second aspect of the embodiments of the present invention, by providing a backlight structure including a plurality of light emitting units according to the first aspect of the embodiments of the present invention, the number of light emitting chips in the backlight structure can be effectively reduced, the backlight structure is simplified, and thus the manufacturing cost of the backlight structure is saved.
A fourth aspect of the embodiments of the present invention provides a method for manufacturing a light source, which is used for manufacturing a light source with a light color conversion function, and has a simple process, easy implementation, and low cost.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic view of a first structure of a light-emitting unit according to an embodiment of the present invention;
FIG. 2 is a graph illustrating the relationship between the light intensity ratio and the thickness of the red conversion layer according to an embodiment of the present invention;
FIG. 3 is a graph illustrating the relationship between the ratio of light intensity and the material and thickness of the red conversion layer provided by an embodiment of the present invention;
fig. 4 is a schematic diagram of a second structure of a light-emitting unit according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a third structure of a light-emitting unit according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a backlight structure provided by an embodiment of the invention;
fig. 7 is a schematic diagram of a passive matrix driving structure provided by an embodiment of the present invention;
fig. 8 is a schematic diagram of an active matrix driving structure provided by an embodiment of the present invention;
fig. 9 is a schematic flow chart of a method for manufacturing a light source according to an embodiment of the present invention;
fig. 10 to 14 are schematic flow charts of a manufacturing process of the light-emitting source according to the embodiment of the invention.
Detailed Description
In order to make the technical solutions of the present invention better understood by those skilled in the art, the technical solutions in the embodiments of the present invention will be clearly described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "comprises" and "comprising," and any variations thereof, in the description and claims of this invention and the above-described drawings are intended to cover non-exclusive inclusions. For example, a process, method, or system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus. Furthermore, the terms "first," "second," and "third," etc. are used to distinguish between different objects and are not used to describe a particular order.
As shown in fig. 1, an embodiment of the present invention provides a light emitting unit 1, including: the light source comprises a first light emitting source 10 and a second light emitting source 20, wherein the first light emitting source 10 comprises a first light emitting chip 11 and a color conversion layer 12 covering the first light emitting chip, and the second light emitting source 20 comprises a second light emitting chip 21, wherein light emitted by the first light emitting chip 11 passes through the color conversion layer 12 and then is mixed with light emitted by the second light emitting source 20 to obtain white light.
In application, the light emitted by the first light emitting source is two of red, blue and green, and the light emitted by the second light emitting source is the other one of red, blue and green, so that the light emitted by the first light emitting source and the light emitted by the second light emitting source are mixed to obtain white light, that is, the light emitted by the light emitting unit is full-color light including three colors of red, blue and green.
In application, the colors of the light emitted by the first light emitting chip and the second light emitting chip can be consistent or inconsistent, when the colors of the light emitted by the first light emitting chip and the second light emitting chip are consistent, the first light emitting chip and the second light emitting chip are the same type of light emitting chip, and when the colors of the light emitted by the first light emitting chip and the second light emitting chip are inconsistent, the first light emitting chip and the second light emitting chip are different types of light emitting chips. The first light emitting chip and the second light emitting chip may be one of a red light chip, a green light chip, and a blue light chip, respectively, and when the first light emitting chip is the green light chip, the second light emitting chip is the blue light chip.
In application, the red Light chip, the green Light chip and the blue Light chip may be Light Emitting Diodes (LEDs), Organic Light-Emitting Diodes (OLEDs), Quantum Dot Light Emitting Diodes (QLEDs), or the like.
In the application, the light of one color emitted by the first light-emitting chip passes through the color conversion layer to obtain the light of two colors, the light of the two colors comprises the light emitted by the first light-emitting chip and the light of the other color obtained by the light passing through the color conversion layer, and the light intensity and the photon number are positively correlated, so that the light intensity ratio between the light of the two colors is positively correlated with the ratio of the total number of photons of the light of the two colors, and the ratio of the total number of photons is specifically determined by the material and the thickness of the color conversion layer, the absorption coefficient of the light emitted by the first light-emitting chip and the light conversion rate. The absorption coefficient and the light conversion efficiency are positively correlated with the same material and thickness of the color conversion layer. The color conversion layer may be made of a quantum dot material or a fluorescent material, for example, potassium fluosilicate (KSF) phosphor (i.e., red phosphor), aluminate red phosphor, aluminate green phosphor, europium-doped blue phosphor, yellow phosphor, or the like.
In one embodiment, the first light emitting chip is a blue light emitting chip, the second light emitting chip is a green light emitting chip, the color conversion layer is a red conversion layer, light emitted by the blue light emitting chip after passing through the red conversion layer is blue light and red light, and a light intensity ratio between the blue light and the red light is as follows: 1:1 to 1: 10.
In application, when the first light emitting chip is a blue light chip, the color conversion layer is a red conversion layer, and light emitted by the blue light chip after passing through the red conversion layer is blue light and red light, the light intensity ratio between the blue light and the red light may be specifically 1: 6.
As shown in fig. 2, a schematic diagram exemplarily showing a relationship between a light intensity proportional relationship between blue light and red light emitted by a blue light chip after passing through a red conversion layer and a thickness of the red conversion layer when the first light emitting chip is the blue light chip and the color conversion layer is the red conversion layer; where B denotes the light intensity of blue light, R denotes the light intensity of red light, K ═ B/R (i.e., the light intensity ratio between blue light and red light), cc (color conversion) denotes the thickness of the red conversion layer, B-0 denotes that the light intensity of blue light is close to 0, and R-0 denotes that the light intensity of red light is close to 0.
In one embodiment, the first light emitting chip is a blue light emitting chip, the second light emitting chip is a green light emitting chip, the color conversion layer is a red conversion layer, and when the light emitted by the blue light emitting chip passes through the red conversion layer and then is emitted as blue light and red light, the red conversion layer includes: the total number of photons of the blue light in unit time is N x exp (-alpha x d), the total number of photons of the red light in unit time is eta x N (1-exp (-alpha x d)), the ratio of the total number of photons of the red light to the total number of photons of the blue light is eta (exp (alpha x d) -1), wherein N is the number of photons emitted by the blue light chip in unit time, alpha is the absorption coefficient of the red conversion layer to the blue light, d is the thickness of the red conversion layer, and eta is the light conversion rate of the red conversion layer.
In application, the unit time may be set according to actual needs, for example, the unit time may be set to 1S (second), 1min (minute), 1h (hour), or the like.
As shown in fig. 3, a schematic diagram exemplarily showing a relationship between a light intensity ratio between red light and blue light emitted from the blue light chip after passing through the red conversion layer and a material and a thickness of the red conversion layer when the first light emitting chip is the blue light chip and the color conversion layer is the red conversion layer; wherein, the horizontal axis coordinate represents the thickness, the vertical axis coordinate represents the light intensity proportion, and the three curves respectively correspond to three different fluorescent materials.
As shown in table one, the absorption coefficient and the light conversion efficiency of the red conversion layer to blue light are exemplarily shown under the condition that the red conversion layer is made of the fluorescent material and the thickness are not changed.
| Absorption coefficient (mm)-1) | Efficiency of light conversion |
| 0.8 | 95％ |
| 0.6 | 85％ |
| 0.4 | 80％ |
In one embodiment, the first light emitting chip is a blue light emitting chip, the second light emitting chip is a green light emitting chip, the color conversion layer is a red conversion layer, and when the light emitted by the blue light emitting chip passes through the red conversion layer and then is emitted as blue light and red light, the red conversion layer includes: the fluorescent powder comprises silica gel and potassium fluosilicate, wherein the mass percentage of the potassium fluosilicate fluorescent powder is 10-20%.
As shown in table two, a table showing a corresponding relationship between the thickness of the red conversion layer and the light intensity ratio between the red light and the blue light emitted from the blue light chip after passing through the red conversion layer when the red conversion layer includes silica gel and potassium fluosilicate phosphor, and the mass ratio of the potassium fluosilicate phosphor is 20% is shown as an example.
Watch two
| Thickness (mm) | Ratio of light intensities |
| 0.3 | 0.5 |
| 0.5 | 1.0 |
| 0.8 | 1.7 |
| 1 | 2.6 |
| 1.3 | 3.6 |
| 1.5 | 4.8 |
| 1.8 | 6.4 |
| 2 | 8.2 |
| 2.3 | 10.5 |
| 2.5 | 13.3 |
| 2.8 | 16.7 |
| 3 | 20.9 |
As shown in table three, a table showing the correspondence between the thickness d of the red conversion layer and the light intensity ratio between the red light and the blue light emitted from the blue light chip after passing through the red conversion layer when the red conversion layer includes silica gel and potassium fluosilicate phosphor, and the mass ratio of the potassium fluosilicate phosphor is 15% is shown as an example.
Watch III
| Thickness (mm) | Ratio of light intensities |
| 0.4 | 0.5 |
| 0.7 | 1.0 |
| 1 | 1.5 |
| 1.3 | 2.2 |
| 1.6 | 3.0 |
| 1.9 | 4.0 |
| 2.2 | 5.1 |
| 2.5 | 6.5 |
| 2.8 | 8.1 |
| 3.1 | 10.1 |
| 3.4 | 12.5 |
| 3.7 | 15.3 |
| 4 | 18.7 |
As shown in table four, a table showing the correspondence between the thickness of the red conversion layer and the light intensity ratio between the red light and the blue light emitted from the blue light chip after passing through the red conversion layer when the red conversion layer includes silica gel and potassium fluosilicate phosphor, and the mass ratio of the potassium fluosilicate phosphor is 10% is shown as an example.
Watch four
| Thickness (mm) | Ratio of light intensities |
| 0.5 | 0.4 |
| 1 | 0.9 |
| 1.5 | 1.4 |
| 2 | 2.1 |
| 2.5 | 3.0 |
| 3 | 4.1 |
| 3.5 | 5.4 |
| 4 | 6.9 |
| 4.5 | 8.8 |
| 5 | 11.2 |
| 5.5 | 14.1 |
| 6 | 17.6 |
| 6.5 | 21.8 |
In one embodiment, the first light emitting chip is a blue light emitting chip, the second light emitting chip is a red light emitting chip, the color conversion layer is a green conversion layer, light emitted by the blue light emitting chip after passing through the green conversion layer is blue light and green light, and a light intensity ratio between the blue light and the green light is as follows: 1:1 to 1: 10.
In application, when the first light emitting chip is a blue light chip, the color conversion layer is a green conversion layer, and the green conversion layer is used for converting light emitted by the first light emitting chip into blue light and green light, the light intensity ratio between the blue light and the green light may be specifically 1: 6.
In one embodiment, the first light emitting chip is a green light chip, the second light emitting chip is a blue light chip, the color conversion layer is a red conversion layer, the light emitted by the first light emitting chip passes through the red conversion layer to obtain green light and red light, and the light intensity ratio between the green light and the red light is as follows: 1:1 to 1: 10.
In application, when the first light emitting chip is a green light chip, the color conversion layer is a red conversion layer, and the red conversion layer is used for converting light emitted by the first light emitting chip into green light and red light, the light intensity ratio between the green light and the red light may be specifically 1: 6.
In one embodiment, the first light emitting chip and the second light emitting chip are both blue light chips, the color conversion layer includes a green conversion layer and a red conversion layer, and the red conversion layer and the green conversion layer are spliced.
In using, when first luminescence chip and second luminescence chip are the blue light chip, the light that the partial light that the blue light chip sent was emergent behind the green conversion layer is green light, and the light that another partial light that the blue light chip sent was emergent behind the red conversion layer is red light, and the light intensity ratio between green light and the red light is: the ratio of 1:1 to 1:10 can be 1: 6.
In one embodiment, the first light emitting chip is a cyan LED chip, the second light emitting chip is a magenta LED chip, the color conversion layer is a yellow conversion layer, light emitted by the cyan LED chip after passing through the yellow conversion layer is cyan light and green light, and a light intensity ratio between the cyan light and the green light is: 1:1 to 1: 10.
In application, when the first light emitting chip is a cyan LED chip, the color conversion layer is a yellow conversion layer, and light emitted by the cyan LED chip after passing through the yellow conversion layer is cyan light and green light, the light intensity ratio between the cyan light and the green light may be specifically 1: 6.
In the above embodiment, by providing a light emitting unit including a first light emitting source and a second light emitting source, the first light emitting source includes a first light emitting chip and a color conversion layer covering the first light emitting chip, the second light emitting source includes a second light emitting chip, and light emitted by the first light emitting chip is mixed with light emitted by the second light emitting chip after passing through the color conversion layer to obtain white light, the number of light emitting chips in the light emitting unit can be reduced, the structure of the light emitting unit is simplified, and thus the manufacturing cost of the light emitting unit is saved. Through setting up first luminescence chip and second luminescence chip into any kind in blue light chip and green glow chip, can avoid using ruddiness chip, effectively save the cost of manufacture of luminescence unit.
In one embodiment, the first light emitting chip is a flip chip.
In one embodiment, the first light emitting source further includes a chip substrate, the first light emitting chip is disposed on the chip substrate, and the color conversion layer covers both the first light emitting chip and the chip substrate.
As shown in fig. 4, a schematic structural diagram of the first light-emitting source 10 when the chip substrate 13 is further included is exemplarily shown.
In application, the first light-emitting chip adopts a flip structure, and is favorable for being arranged on a chip substrate. The chip substrate may be implemented by any substrate material having a conductive function, for example, conductive glass or a Printed Circuit Board (PCB). The conductive glass may specifically be Indium Tin Oxide (ITO) glass. The second light emitting chip may be a front-mounted chip or a flip chip, and the type of the package structure thereof is not limited.
In one embodiment, the first light-emitting source and the second light-emitting source are disposed on the back plate or the PCB.
As shown in fig. 4, the first light-emitting source 10 and the second light-emitting source 20 are exemplarily shown to be disposed on a back plate or a PCB board 101.
In application, the first light-emitting source and the second light-emitting source of the light-emitting unit are directly soldered on the back plate or the PCB, and the plurality of light-emitting units may be arranged in an array on the back plate or the PCB, where the array may be a rectangular array, a circular array, or any other regular or irregular array. The back sheet may include any member having a light reflecting and diffusing function, for example, a light guide plate, a light reflecting plate, a glass substrate, and the like.
In one embodiment, the first light-emitting source and the second light-emitting source are both miniLEDs or micro LEDs.
In one embodiment, the first light emitting chip and the second light emitting chip are both gallium nitride LED chips.
In one embodiment, the light emitting unit further includes: a first encapsulation layer encapsulating the first light emitting source.
In one embodiment, the first package layer includes a first package protection layer and a first package back plate, the first package protection layer covers the first package back plate to form a first hollow cavity, and the first light emitting source is disposed on the first package back plate and located in the first hollow cavity.
In one embodiment, the light emitting unit further includes: and the second packaging layer wraps the first luminous source and the second luminous source.
In one embodiment, the second package layer includes a second package protection layer and a second package back plate, the second package protection layer covers the second package back plate to form a second hollow cavity, and the first light source and the second light source are disposed on the second package back plate and located in the second hollow cavity.
As shown in fig. 5, a case is exemplarily shown where the light emitting unit 1 further includes a second encapsulation layer 30 and the first light emitting source 10 and the second light emitting source 20 are disposed in the second encapsulation layer 30, where the second encapsulation layer 30 includes a second encapsulation protection layer 31 and a second encapsulation back plate 32.
In application, the first and second packaging protection layers may be made of any non-conductive light-transmitting material, such as glass, acrylic, plastic, etc.; the first package backplane and the second package backplane may be made of any conductive material, such as copper pillars, ito glass, graphene, substrate heat-conducting fins, and the like. In the above embodiment, by providing a package layer structure including a package protection layer and a package back plate, the first light-emitting source and the second light-emitting source included in the light-emitting unit are packaged in the hollow cavity of the package layer, so that the light-emitting unit can be effectively protected, and each light-emitting unit can be manufactured independently, thereby facilitating installation, movement, detachment and replacement.
As shown in fig. 6, an embodiment of the present invention further provides a backlight structure 100, which includes a plurality of light emitting units 1 as described in the above embodiments, and the plurality of light emitting units 1 are arranged in an array on a back plate or a PCB 101.
In application, the plurality of light emitting cells may be arranged in an array of arbitrary shape, for example, a rectangular array, a circular array, or the like, in a regular manner on the substrate.
Fig. 6 exemplarily shows a case where a plurality of light emitting units 1 are regularly arranged in a rectangular array on a back sheet 101, wherein the light emitting units 1 include a first light emitting source 10 and a second light emitting source 20.
In this embodiment, by providing a backlight structure including a plurality of light emitting units according to the first aspect of the embodiments of the present invention, the number of light emitting chips in the backlight structure can be effectively reduced, and the backlight structure is simplified, thereby saving the manufacturing cost of the backlight structure.
An embodiment of the present invention further provides a display panel including the backlight structure in the above embodiments.
In one embodiment, all the light emitting units in the backlight structure may be arranged in a passive matrix driving structure, and in each of the light emitting units, an anode of the first light emitting source and an anode of the second light emitting source are connected to form a column driving signal input terminal of the light emitting unit, and a cathode of the first light emitting source and a cathode of the second light emitting source are connected to form a row driving signal input terminal of the light emitting unit.
As shown in fig. 7, a schematic diagram of a circuit structure of any light emitting unit when the backlight structure adopts a passive matrix driving structure is exemplarily shown; the first light emitting source 10 and the second light emitting source 20 are both LED lamps, an anode of the first light emitting source 10 and an anode of the second light emitting source 20 are connected to form a column driving signal input end of the light emitting unit 1, and a cathode of the first light emitting source 10 and a cathode of the second light emitting source 20 are connected to form a row driving signal input end of the light emitting unit 1.
In application, the row driving signal input end is used for being connected with the row driving module through a row driving line so as to input a row driving signal; the column driving signal input end is used for being connected with the column driving module through the column driving line so as to input column driving signals. The row driving module may be a Gate driving module, the row driving signal may be a scan driving signal, and the Gate driving module may be any device or circuit having a function of scanning and charging a light emitting module of the backlight module, such as a Gate Driver IC (Gate Driver IC) or a thin-Film Gate-on-Film (G-COF). The row driving module may be a Source driving module, the column driving module may be a data driving signal, and the Source driving module may be any device or circuit having a function of driving data of the light emitting module of the backlight module, such as a Source Driver IC (Source Driver IC) or a thin-Film Source Driver Chip (S-COF, Source-Chip on Film).
By adopting the passive matrix driving structure provided by the corresponding embodiment of fig. 7, the number of channels of the backlight structure can be reduced 1/3, and the cost can be effectively reduced.
In one embodiment, all the light emitting units in the backlight structure may be arranged in an active matrix driving structure, in each of the light emitting units, an anode of the first light emitting source is configured to receive a first power signal, an anode of the second light emitting source is configured to receive a second power signal, a cathode of the first light emitting source is connected to a first input terminal of the transistor memory, a cathode of the second light emitting source is connected to a second input terminal of the transistor memory, a controlled terminal of the transistor memory forms a row driving signal input terminal of the light emitting unit, a third input terminal of the transistor memory forms a first column driving signal input terminal of the light emitting unit, a fourth input terminal of the transistor memory is a second column driving signal input terminal of the light emitting unit, and an output terminal of the transistor memory is grounded.
As shown in fig. 8, a schematic diagram of a circuit structure of any light emitting unit when the backlight structure adopts an active matrix driving structure is exemplarily shown; the first light emitting source 10 and the second light emitting source 20 are both LED lamps, the anode of the first light emitting source 10 is used for accessing a first power signal, the anode of the second light emitting source 20 is used for accessing a second power signal, the cathode of the first light emitting source 10 is connected to the first input terminal of the transistor memory 3, the cathode of the second light emitting source 20 is connected to the second input terminal of the transistor memory 3, the controlled terminal of the transistor memory 3 forms the row driving signal input terminal of the light emitting unit 1, the third input terminal of the transistor memory 3 is the first column driving signal input terminal of the light emitting unit 1, the fourth input terminal of the transistor memory 3 forms the second column driving signal input terminal of the light emitting unit 1, and the output terminal of the transistor memory 3 is grounded.
In application, the transistor storage comprises two or more transistors, which are turned on or off under the action of a row driving signal input by a row driving line, a column driving signal input by a column driving line and a power signal, and the light emitting units are driven and controlled by the row driving signal and the column driving signal. The Transistor may be any electronic switching Transistor, such as a triode, a field effect Transistor, a Thin Film Transistor (TFT), or the like.
As shown in fig. 8, in one embodiment, the transistor memory 3 includes a first transistor 31, a second transistor 32, a third transistor 33, and a fourth transistor 34;
in each light emitting unit 1, the input terminal of the first transistor 31 is the first input terminal of the transistor memory 3, the input terminal of the third transistor 33 is the second input terminal of the transistor memory 3, the input terminal of the second transistor 32 is the third input terminal of the transistor memory 3, the input terminal of the fourth transistor 34 is the fourth input terminal of the transistor memory 3, the output terminal of the first transistor 31 and the output terminal of the third transistor 33 are connected in common to form the output terminal of the transistor memory 3, the controlled terminal of the second transistor 32 and the controlled terminal of the fourth transistor 34 are connected in common to form the controlled terminal of the transistor memory 3, the controlled terminal of the first transistor 31 is connected to the output terminal of the second transistor 32, and the controlled terminal of the third transistor 33 is connected to the output terminal of the fourth transistor 34.
In fig. 8, the first transistor 31, the second transistor 32, the third transistor 33, and the fourth transistor 34 are exemplarily illustrated as field effect transistors.
By adopting the active matrix driving structure provided by the embodiment corresponding to fig. 8, the number of channels of the backlight structure can be reduced 1/3, and the cost can be effectively reduced.
As shown in fig. 9, an embodiment of the present invention further provides a manufacturing method for manufacturing the first light-emitting source in the above embodiment, including:
step S201, growing an epitaxial layer on a substrate and manufacturing a plurality of light-emitting chips, wherein the plurality of light-emitting chips are arranged at intervals;
step S202, transferring the manufactured light-emitting chips to a wafer expanding film and carrying out film expanding treatment;
step S203, transferring the plurality of light emitting chips subjected to the film expanding treatment to a chip substrate;
step S204, growing a color conversion layer on the chip substrate and covering each light-emitting chip;
step S205, cutting the chip substrate of the light emitting chip covered with the color conversion layer to obtain a plurality of light emitting sources.
In step S201, the substrate may be a sapphire substrate, and the epitaxial layer may be grown by using a gan material.
As shown in fig. 10, a top view and a cross-sectional view of a substrate 202 on which a plurality of light emitting chips 201 are fabricated are exemplarily shown.
In step S202, the adhesive surface of the die-expanding film may be covered on the fabricated light-emitting chips to transfer the fabricated light-emitting chips to the die-expanding film, and then the die-expanding film with the light-emitting chips attached thereto may be subjected to die expanding by the die-expanding film machine. The film expanding means that the crystal expanding film adhered with the plurality of light-emitting chips is stretched and expanded, so that the adjacent light-emitting chips on the crystal expanding film are separated, the distance between the adjacent light-emitting chips is increased, and the subsequent cutting is facilitated.
As shown in fig. 11, a top view and a cross-sectional view of a plurality of light emitting chips 201 and a die-spreading film 203 after film-spreading are exemplarily shown.
In step S203, the plurality of light emitting chips with the spread film attached thereon may be covered on the chip substrate, and then the spread film is torn off to transfer the plurality of light emitting chips after the spread film is completed to the chip substrate; the chip substrate may be bonded to a plurality of light emitting chips, and then the die-expanding film may be torn off.
As shown in fig. 12, a top view and a cross-sectional view of a chip substrate 204 provided with a plurality of light emitting chips 201 are exemplarily shown.
In step S204, the light color conversion layer covers the entire chip substrate, and the blue light chip is located between the light color conversion layer and the chip substrate.
As shown in fig. 13, a top view and a cross-sectional view of a chip substrate 204 grown with a color conversion layer 205 that can cover a plurality of light emitting chips 201 at the same time are exemplarily shown.
In step S205, the chip substrate of the plurality of light emitting chips covered with the color conversion layer may be cut by a laser cutting process to obtain a plurality of light emitting sources.
As shown in fig. 14, a top view and a cross-sectional view of the chip substrate 204 of the plurality of light emitting chips 201 covered with the color conversion layer 205 after dicing are exemplarily shown.
In one embodiment, before step S205, the method includes:
and manufacturing a water oxygen protective layer on the color conversion layer.
In use, the water-based protective layer serves to block oxygen and water and prevent oxygen and water from attacking the color conversion cell. The water-oxygen protective layer can be made of at least one of alumina, silicon dioxide, alumina and parylene material.
In application, the method for manufacturing the second light-emitting source in the above embodiment further includes a step of cutting the chip substrate provided with the plurality of light-emitting chips to obtain the plurality of light-emitting sources in addition to steps S201 to S203.
The embodiment provides a method for manufacturing a light source, which is used for manufacturing the light source with a light color conversion function, and has the advantages of simple process, easy implementation and low cost.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (16)
1. A light-emitting unit, comprising: the white light source comprises a first light emitting source and a second light emitting source, wherein the first light emitting source comprises a first light emitting chip and a color conversion layer covering the first light emitting chip, the second light emitting source comprises a second light emitting chip, and light rays emitted by the first light emitting chip are mixed with light rays emitted by the second light emitting chip after passing through the color conversion layer to obtain white light.
2. The light-emitting unit according to claim 1, wherein the first light-emitting chip is a blue chip, the second light-emitting chip is a green chip, and the color conversion layer is a red conversion layer.
3. The light-emitting unit according to claim 2, wherein the light emitted from the blue light chip after passing through the red conversion layer is blue light and red light, and the light intensity ratio between the blue light and the red light is: 1:1 to 1: 10.
4. The light-emitting unit according to claim 3, wherein the total number of photons per unit time of the blue light is N x exp (-alpha x d), the total number of photons per unit time of the red light is eta x N (1-exp (-alpha x d)), and a ratio of the total number of photons per unit time of the red light to the total number of photons per unit time of the blue light is eta (exp (alpha x d) -1), where N is the number of photons emitted per unit time of the blue light chip, alpha is an absorption coefficient of the red conversion layer for blue light, d is a thickness of the red conversion layer, and eta is a light conversion rate of the red conversion layer.
5. The light emitting cell of claim 3, wherein the red conversion layer comprises: the fluorescent powder comprises silica gel and potassium fluosilicate, wherein the mass percentage of the potassium fluosilicate fluorescent powder is 10-20%.
6. The light-emitting unit according to claim 1, wherein the first light-emitting chip is a blue chip, the second light-emitting chip is a red chip, and the color conversion layer is a green conversion layer.
7. The light-emitting unit according to claim 1, wherein the first light-emitting chip is a green chip, the second light-emitting chip is a blue chip, and the color conversion layer is a red conversion layer.
8. The light-emitting unit according to claim 1, wherein the first and second light-emitting chips are blue chips, the color conversion layer comprises a green conversion layer and a red conversion layer, and the red conversion layer is spliced with the green conversion layer.
9. The light-emitting unit according to claim 1, wherein the first light-emitting chip is a cyan LED chip, the second light-emitting chip is a magenta LED chip, and the color conversion layer is a yellow conversion layer.
10. The light-emitting unit according to any one of claims 1 to 9, further comprising: a first encapsulation layer encapsulating the first light emitting source.
11. The light-emitting unit according to any one of claims 1 to 9, further comprising: and the second packaging layer wraps the first luminous source and the second luminous source.
12. A backlight structure comprising a plurality of light emitting units according to any one of claims 1 to 11, wherein the plurality of light emitting units are arranged in an array on a back plate or a PCB.
13. The backlight structure of claim 12, wherein in each of the light emitting units, the anode of the first light emitting source is connected to the anode of the second light emitting source to form a column driving signal input terminal of the light emitting unit, and the cathode of the first light emitting source is connected to the cathode of the second light emitting source to form a row driving signal input terminal of the light emitting unit;
or, in each of the light emitting units, an anode of the first light emitting source is used for accessing a first power signal, an anode of the second light emitting source is used for accessing a second power signal, a cathode of the first light emitting source is connected with a first input end of the transistor memory, a cathode of the second light emitting source is connected with a second input end of the transistor memory, a controlled end of the transistor memory forms a row driving signal input end of the light emitting unit, a third input end of the transistor memory forms a first column driving signal input end of the light emitting unit, a fourth input end of the transistor memory forms a second column driving signal input end of the light emitting unit, and an output end of the transistor memory is grounded.
14. A display panel comprising a backlight structure according to claim 12 or 13.
15. A method for manufacturing a light emitting source includes:
growing an epitaxial layer on a substrate and manufacturing a plurality of light-emitting chips, wherein the light-emitting chips are arranged at intervals;
transferring the manufactured light-emitting chips to a crystal expansion film and carrying out film expansion treatment;
transferring the plurality of light emitting chips subjected to the film expanding treatment to a chip substrate;
growing a color conversion layer on the chip substrate while covering each of the light emitting chips;
and cutting the chip substrate of the light-emitting chip covered with the color conversion layer to obtain a plurality of light-emitting sources.
16. The method for manufacturing a light source according to claim 15, wherein the step of cutting the chip substrate of the light emitting chip covered with the color conversion layer to obtain the plurality of light sources comprises:
and manufacturing a water oxygen protective layer on the color conversion layer.
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