US20180111860A1 - Substrate processing apparatus, process fluid treating apparatus, and ozone decomposition method - Google Patents
Substrate processing apparatus, process fluid treating apparatus, and ozone decomposition method Download PDFInfo
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- US20180111860A1 US20180111860A1 US15/791,975 US201715791975A US2018111860A1 US 20180111860 A1 US20180111860 A1 US 20180111860A1 US 201715791975 A US201715791975 A US 201715791975A US 2018111860 A1 US2018111860 A1 US 2018111860A1
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- process fluid
- housing
- circulation line
- substrate processing
- processing apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/72—Treatment of water, waste water, or sewage by oxidation
- C02F1/727—Treatment of water, waste water, or sewage by oxidation using pure oxygen or oxygen rich gas
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/34—Treatment of water, waste water, or sewage with mechanical oscillations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2101/00—Nature of the contaminant
- C02F2101/10—Inorganic compounds
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
- C02F2103/34—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32
- C02F2103/346—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from semiconductor processing, e.g. waste water from polishing of wafers
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2301/00—General aspects of water treatment
- C02F2301/02—Fluid flow conditions
- C02F2301/024—Turbulent
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2301/00—General aspects of water treatment
- C02F2301/04—Flow arrangements
- C02F2301/046—Recirculation with an external loop
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2303/00—Specific treatment goals
- C02F2303/18—Removal of treatment agents after treatment
Definitions
- Embodiments of the inventive concept described herein relate to a substrate processing apparatus, a process fluid treating apparatus, and an ozone decomposition method.
- a substrate is subjected to a variety of processes, such as photolithography, etching, ashing, ion implantation, thin-film deposition, cleaning, and the like, to manufacture a semiconductor device or a liquid crystal display.
- processes such as photolithography, etching, ashing, ion implantation, thin-film deposition, cleaning, and the like, to manufacture a semiconductor device or a liquid crystal display.
- an etching process is used to remove unnecessary regions from a thin film formed on the substrate, and a high etching selectivity and a high etch rate are required for the thin film.
- a chemical treatment step, a rinsing step, and a drying step are generally performed on a substrate in a serial order.
- a chemical treatment step a chemical is supplied to the substrate to etch a thin film formed on the substrate or to remove foreign substances on the substrate, and in the rinsing step, a rinsing solution, such as DI water, is supplied to the substrate.
- fluid used to process the substrate may include ozone.
- Embodiments of the inventive concept provide a substrate processing apparatus, a process fluid treating apparatus, and an ozone decomposition method that effectively process a substrate.
- a substrate processing apparatus includes a process chamber that processes a substrate with a process fluid including ozone, a discharge conduit connected to the process chamber to discharge the process fluid used to process the substrate, and a process fluid treating apparatus connected with the discharge conduit.
- the process fluid treating apparatus includes a housing having an inner space with a set volume in which the process fluid is received and an injection nozzle that connects the discharge conduit and the inner space of the housing.
- the injection nozzle may inject the process fluid downwards.
- the injection nozzle may include a plurality of injection holes through which the process fluid is injected.
- the injection nozzle may inject the process fluid by a spray method.
- the process fluid treating apparatus may further include a strike plate located inside the housing such that a top side of the strike plate faces the process fluid injected through the injection nozzle.
- the process fluid treating apparatus may further include a gas supply conduit that supplies gas including oxygen into the inner space of the housing.
- the process fluid treating apparatus may further include a circulation line that has opposite ends connected to the housing and allows the process fluid discharged from the housing to flow into the housing again.
- the process fluid treating apparatus may further include a gas supply conduit that supplies gas including oxygen into the inner space of the housing.
- the process fluid treating apparatus may further include a strike plate located inside the housing such that a top side of the strike plate faces the process fluid injected through the injection nozzle, and the gas supply conduit may include an upper injection part that extends toward the inner space of the housing and injects the gas into a space between the injection nozzle and the strike plate.
- the gas supply conduit may include a lower injection part that extends toward the inner space of the housing and injects the gas into the process fluid received in the inner space of the housing.
- the process fluid treating apparatus may further include a circulation line that has opposite ends connected to the housing and allows the process fluid discharged from the housing to flow into the housing again.
- the circulation line may have a turbulence creating part therein to allow the process fluid flowing through the circulation line to become turbulent.
- the turbulence creating part may have a plate shape with one or more flow holes.
- the flow holes may be formed to be inclined with respect to an axial direction of the circulation line.
- the turbulence creating part may include a first plate and a second plate that block a part of a flow passage inside the circulation line and are located to have different slopes with respect to an axial direction of the circulation line.
- a pump may be located on the circulation line.
- a heater may be located on the circulation line.
- a circulation nozzle may be located at one end of the circulation line through which the process fluid flowing through the circulation line flows into the housing again.
- the circulation nozzle may inject the process fluid downwards.
- the process fluid treating apparatus may further include a strike plate located inside the housing such that a top side of the strike plate faces the process fluid injected through the injection nozzle.
- the process fluid treating apparatus may further include a gas supply conduit that supplies gas including oxygen into the inner space of the housing.
- a process fluid treating apparatus includes a housing having an inner space with a set volume in which a process fluid including ozone is received, a discharge conduit connected to the housing to supply the process fluid into the inner space of the housing, and a strike plate located in a moving path of the process fluid introduced by the discharge conduit.
- the process fluid treating apparatus may further include an injection nozzle located on an end portion of the discharge conduit to inject the process fluid into the inner space of the housing.
- a process fluid treating apparatus includes a housing having an inner space with a set volume in which a process fluid including ozone is received, a discharge conduit connected to the housing to supply the process fluid into the inner space of the housing, and a circulation line that has opposite ends connected to the housing and allows the process fluid discharged from the housing to flow into the housing again.
- the circulation line may have a turbulence creating part therein to allow the process fluid flowing through the circulation line to become turbulent.
- a pump may be located on the circulation line.
- a heater may be located on the circulation line.
- a circulation nozzle that injects the process fluid downwards may be located at one end of the circulation line through which the process fluid flowing through the circulation line flows into the housing again.
- a method of decomposing ozone included in a process fluid includes recovering the process fluid, which includes the ozone and has been used to process a substrate, into an inner space of a housing, in which case the process fluid is injected into the inner space of the housing by a spray method.
- the process fluid may be injected toward a strike plate disposed in the inner space of the housing.
- the method may further include circulating the process fluid injected into the housing through a circulation line and decomposing the ozone by using a force applied to the process fluid in the circulation process.
- the process fluid may flow through the circulation line while creating turbulence.
- the process fluid may be heated while flowing through the circulation line.
- Gas including oxygen may be supplied into the inner space of the housing.
- the gas may be supplied to a part into which the process fluid is injected.
- the gas may be supplied into the process fluid that is received in the housing after injected.
- a substrate processing apparatus a process fluid treating apparatus, and an ozone decomposition method that are capable of effectively processing a substrate.
- FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the inventive concept
- FIG. 2 illustrates a connection relation between elements for supplying a process fluid to a process chamber and recovering the same from the process chamber;
- FIG. 3 illustrates a process fluid treating apparatus
- FIG. 4 illustrates an injection nozzle
- FIG. 5 is a partially sectioned view of a circulation line
- FIG. 6 is a longitudinal sectional view of a turbulence creating part
- FIG. 7 is a partially sectioned view of a circulation line according to another embodiment.
- FIG. 8 illustrates a process fluid treating apparatus according to another embodiment.
- FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the inventive concept.
- a substrate processing apparatus 1 includes an index module 10 and a process module 20 .
- the index module 10 has a plurality of load ports 11 and a transfer frame 14 .
- the load ports 11 , the transfer frame 14 , and the process module 20 are sequentially arranged in a row.
- the direction in which the load ports 11 , the transfer frame 14 , and the process module 20 are arranged is referred to as a first direction 2 .
- a direction perpendicular to the first direction 2 is referred to as a second direction 3
- a direction perpendicular to a plane that includes the first direction 2 and the second direction 3 is referred to as a third direction 4 .
- Carriers 13 having substrates W received therein are seated on the load ports 11 , respectively.
- the plurality of load ports 11 are arranged in a row in the second direction 3 .
- Four load ports 11 are illustrated in FIG. 1 .
- the number of load ports 11 may increase or decrease depending on conditions, such as process efficiency and footprint of the process module 20 .
- Each carrier 13 has a plurality of slots (not illustrated) formed therein to support edges of the substrates W.
- the plurality of slots are arranged in the third direction 4 , and the substrates W are located in the carrier 13 so as to be stacked one above another in the third direction 4 with a spacing gap therebetween.
- a front opening unified pod (FOUP) may be used as the carrier 13 .
- FOUP front opening unified pod
- the process module 20 has a buffer unit 22 , a transfer chamber 25 , and process chambers 26 .
- the transfer chamber 25 is arranged such that the longitudinal direction thereof is parallel to the first direction 2 .
- the process chambers 26 are disposed on opposite sides of the transfer chamber 25 in the second direction 3 .
- the process chambers 26 on one side of the transfer chamber 25 and the process chambers 26 on the opposite side of the transfer chamber 25 are located in a symmetric arrangement with respect to the transfer chamber 25 .
- Some of the process chambers 26 are arranged in the longitudinal direction of the transfer chamber 25 . Furthermore, the other process chambers 26 are stacked one above another.
- the process chambers 26 may be arranged in an A ⁇ B array (A and B being natural numbers of 1 or larger) on the opposite sides of the transfer chamber 25 .
- A is the number of rows in which the process chambers 26 are arranged in the first direction 2
- B is the number of columns in which the process chambers 26 are arranged in the third direction 4 .
- the process chambers 26 may be arranged in a 2 ⁇ 2 or 3 ⁇ 2 array. The number of process chambers 26 may increase or decrease.
- the process chambers 26 may be disposed on only one side of the transfer chamber 25 .
- the process chambers 26 may be disposed in a single layer on the opposite sides of the transfer chamber 25 .
- the buffer unit 22 is disposed between the transfer frame 14 and the transfer chamber 25 .
- the buffer unit 22 has a space in which substrates W stay before transferred between the transfer chamber 25 and the transfer frame 14 .
- the buffer unit 22 has a plurality of slots (not illustrated) therein, on which substrates W are placed. The plurality of slots (not illustrated) are separated from one another in the third direction 4 .
- the buffer unit 22 is open at one side facing the transfer frame 14 and at an opposite side facing the transfer chamber 25 .
- the transfer frame 14 transfers substrates W between the carriers 13 seated on the load ports 11 and the buffer unit 22 .
- the transfer frame 14 includes an index rail 17 and an index robot 16 .
- the index rail 17 is arranged such that the longitudinal direction thereof is parallel to the second direction 3 .
- the index robot 16 is installed on the index rail 17 and linearly moves along the index rail 17 in the second direction 3 .
- the index robot 16 has a base 16 a , a body 16 b , and a plurality of index arms 16 c .
- the base 16 a is installed so as to be movable along the index rail 17 .
- the body 16 b is coupled to the base 16 a .
- the body 16 b may be configured to move on the base 16 a in the third direction 4 .
- the body 16 b may be configured to rotate on the base 16 a .
- the plurality of index arms 16 c are coupled to the body 16 b to move forward and rearward relative to the body 16 b .
- the plurality of index arms 16 c may operate individually.
- the index arms 16 c are stacked one above another in the third direction 4 with a spacing gap therebetween.
- Some of the index arms 16 c may be used to transfer substrates W from the process module 20 to the carriers 13
- the other index arms 16 c may be used to transfer substrates W from the carriers 13 to the process module 20 . Accordingly, it is possible to prevent particles generated from substrates W to be processed from adhering to processed substrates W in the process in which the index robot 16 carries the substrates W into and out of the process module 20 .
- the transfer chamber 25 transfers substrates W between the buffer unit 22 and the process chambers 26 and between the process chambers 26 .
- the transfer frame 25 includes a guide rail 29 and a main robot 24 .
- the guide rail 29 is arranged such that the longitudinal direction thereof is parallel to the first direction 2 .
- the main robot 24 is installed on the guide rail 29 and linearly moves along the guide rail 29 in the first direction 2 .
- the main robot 24 has a base 24 a , a body 24 b , and a plurality of main arms 24 c .
- the base 24 a is installed so as to be movable along the guide rail 29 .
- the body 24 b is coupled to the base 24 a .
- the body 24 b may be configured to move on the base 24 a in the third direction 4 .
- the body 24 b may be configured to rotate on the base 24 a .
- the plurality of main arms 24 c are coupled to the body 24 b to move forward and rearward relative to the body 24 b .
- the plurality of main arms 24 c may operate individually.
- the main arms 24 c are stacked one above another in the third direction 4 with a spacing gap therebetween.
- the main arm 24 c used to transfer substrates W from the buffer unit 22 to the process chambers 26 may differ from the main arm 24 c used to transfer substrates W from the process chambers 26 to the buffer unit 22 .
- the process chambers 26 have substrate processing apparatuses 30 therein, respectively, to perform a cleaning process on a substrate W.
- the substrate processing apparatuses 30 (see FIG. 2 ) in the respective process chambers 26 may have different structures according to the types of cleaning processes to be performed.
- the substrate processing apparatuses 30 in the respective process chambers 26 may have the same structure.
- the process chambers 26 may be distinguished into a plurality groups; and the substrate processing apparatuses 30 in the process chambers 26 belonging to the same group may have the same structure, and the substrate processing apparatuses 30 in the process chambers 26 belonging to different groups may have different structures.
- a first group of process chambers 26 may be disposed on one side of the transfer chamber 25 , and a second group of process chambers 26 may be disposed on the opposite side of the transfer chamber 25 .
- the first group of process chambers 26 may be disposed in a lower layer, and the second group of process chambers 26 may be disposed in an upper layer.
- the first group of process chambers 26 may be distinguished from the second group of process chambers 26 according to the types of chemicals to be used and the types of cleaning methods.
- FIG. 2 illustrates a connection relation between elements for supplying a process fluid to a process chamber and recovering the same from the process chamber.
- a process fluid may be ozone water or a mixture of ozone water and a liquid chemical.
- the process chamber 26 has a nozzle 100 and a cup 200 inside.
- the process fluid supply 31 supplies the process fluid to the nozzle 100 through a supply conduit 110 . While FIG. 2 illustrates that the process fluid supply 31 is connected with the single process chamber 26 , the process fluid supply 31 may be connected with two or more process chambers 26 .
- the process fluid supplied to a substrate through the nozzle 100 to perform a process is recovered by the cup 200 and then discharged through a discharge conduit 210 connected to the cup 200 .
- a recovery conduit 220 may be connected to the discharge conduit 210 and the process fluid supply 31 to supply the process fluid recovered through the cup 200 to the process fluid supply 31 .
- FIG. 3 illustrates a process fluid treating apparatus
- FIG. 4 illustrates an injection nozzle
- the process fluid treating apparatus 32 is connected to the discharge conduit 210 to remove ozone included in a process fluid or to reduce the amount of ozone included in the process fluid.
- the process fluid treating apparatus 32 includes a housing 300 , an injection nozzle 310 , a gas supply conduit 320 , a strike plate 330 , and a circulation line 350 .
- the housing 300 has a space in which to receive the process fluid introduced through the discharge conduit 210 .
- the housing 300 has an inner space formed therein to receive a set amount of process fluid.
- the injection nozzle 310 connects the discharge conduit 210 and the inner space of the housing 300 to allow the process fluid introduced into the discharge conduit 210 to be supplied into the inner space of the housing 300 .
- the injection nozzle 310 has a plurality of injection holes 311 formed therein, and the process fluid may be injected through the injection holes 311 in the form of a plurality of streams or in a mist form by a spray method. Accordingly, it is possible to increase a contact area between the process fluid and gas in the inner space of the housing 300 , thereby enhancing the degree of decomposition of ozone included in the process fluid.
- the gas supply conduit 320 supplies, into the inner space of the housing 300 , a decomposition gas that reacts with ozone included in the process fluid to facilitate decomposition of the ozone.
- the decomposition gas includes oxygen.
- the decomposition gas may be air.
- the strike plate 330 is disposed in the inner space of the housing 300 .
- the strike plate 330 is located such that one side thereof faces the process fluid injected through the injection nozzle 310 .
- the injection nozzle 310 may be located on the top side or a lateral side of the housing 300 to inject the process fluid downwards.
- a part of a lateral side of the strike plate 330 may be secured to an inside of the housing 300 , and the top side of the strike plate 330 may be located in the path along which the process fluid injected through the injection nozzle 310 moves.
- the process fluid injected through the injection nozzle 310 collides with the strike plate 330 , and the degree of decomposition of ozone is enhanced by forces applied to the process fluid during the collision and an effect, such as an increase in the area by which particles react with the gas while being broken in a scattering process after the collision.
- FIG. 5 is a partially sectioned view of a circulation line
- FIG. 6 is a longitudinal sectional view of a turbulence creating part.
- the circulation line 350 provides a path along which the process fluid received in the housing 300 circulates.
- One end of the circulation line 350 is connected to the bottom of the housing 300 , and the process fluid received in the housing 300 flows into the circulation line 350 .
- An opposite end of the circulation line 350 is connected to the top of the housing 300 , and the process fluid in the circulation line 350 flows into the housing 300 again.
- the circulation line 350 has one or more turbulence creating parts 3000 therein.
- the turbulence creating parts 3000 have a plate shape having one or more flow holes 3100 formed therein. Accordingly, the circulating fluid becomes turbulent while colliding with the turbulence creating parts 3000 and flowing through the flow holes 3100 , and forces caused by the turbulent flow facilitate decomposition of ozone.
- the flow holes 3100 formed in the turbulence creating parts 3000 may be inclined with respect to the axial direction of the circulation line 350 . Accordingly, the flow direction of the process fluid passing through the flow holes 3100 may be inclined with respect to the axial direction of the circulation line 350 , and thus turbulence may be easily created. Furthermore, in the case where the turbulence creating part 3000 has the plurality of flow holes 3100 formed therein, the flow holes 3100 may be inclined in different directions to enhance the degree to which turbulence is created.
- a pump 351 may be located on the circulation line 350 .
- the pump 351 may be located adjacent to the one end of the circulation line 350 into which the process fluid flows.
- the pump 351 applies pressure to the process fluid to allow the process fluid to effectively flow while creating turbulence. Furthermore, the pressure applied by the pump 351 may facilitate decomposition of ozone included in the process fluid.
- a heater 352 may be located on the circulation line 350 .
- the heater 352 may heat the process fluid to facilitate the decomposition of ozone.
- a circulation nozzle 353 is located at the opposite end of the circulation line 350 .
- the circulation nozzle 353 has a plurality of holes formed therein, similarly to the injection nozzle 310 of FIG. 4 . Accordingly, the process fluid flowing into the housing 300 again through the circulation line 350 may be injected in the form of a plurality of streams or in a mist form, and thus the degree of decomposition of ozone may be enhanced.
- the circulation nozzle 353 may be located on the top side or a lateral side of the housing 300 to inject the process fluid downwards toward the strike plate 330 , thereby permitting the injected process fluid to collide with the strike plate 330 .
- a discharge valve 371 on a discharge line 370 connected to the bottom of the housing 300 is opened to discharge the process fluid from the housing 300 .
- the gas inside the housing 300 may be discharged through a gas discharge line 360 by opening a gas discharge valve 361 on the gas discharge line 360 .
- the discharge of the gas inside the housing 300 may be performed while ozone is being decomposed.
- FIG. 7 is a partially sectioned view of a circulation line according to another embodiment.
- turbulence creating parts 3200 may include a first plate 3210 and a second plate 3220 .
- the first plate 3210 and the second plate 3220 may have a plate shape and may be located to block a part of a flow passage inside a circulation line 350 a .
- the first plate 3210 and the second plate 3220 may be installed at different slopes with respect to the axial direction of the circulation line 350 a .
- the first plate 3210 and the second plate 3220 may be obliquely installed in different directions from the axial direction of the circulation line 350 a , as illustrated in FIG. 7 .
- one of the first plate 3210 and the second plate 3220 may be installed to be perpendicular to the axial direction of the circulation line 350 a , and the other may be obliquely installed to be inclined with respect to the axial direction of the circulation line 350 a . Accordingly, a process fluid may collide with the turbulence creating parts 3200 in a flow process and may flow through the space between the first plate 3210 and the second plate 3220 while creating turbulence, thereby facilitating decomposition of ozone included in the process fluid.
- FIG. 8 illustrates a process fluid treating apparatus according to another embodiment.
- a process fluid treating apparatus 32 a includes a housing 300 a , an injection nozzle 310 a , a gas supply conduit 320 a , a strike plate 330 a , and a circulation line 350 a.
- the housing 300 a Since the housing 300 a , the injection nozzle 310 a , the strike plate 330 a , the circulation line 350 a , a discharge line 370 a , a gas discharge line 360 a , and a pump 351 a , a heater 352 a , and a circulation nozzle 353 a located along the circulation line 350 a are the same as those of the process fluid treating apparatus 32 of FIG. 3 , repetitive descriptions thereof will be omitted.
- the gas supply conduit 320 a extends toward an inner space of the housing 300 a .
- the gas supply conduit 320 a includes an upper injection part 325 .
- the upper injection part 325 is configured to inject a decomposition gas into the space between the injection nozzle 310 a and the strike plate 330 a . Accordingly, a process fluid injected through the injection nozzle 310 a and a process fluid injected through the circulation nozzle 353 a may make frequent contact with the decomposition gas before and after a collision with the strike plate 330 a , and thus the degree of decomposition of ozone may be enhanced.
- the gas supply conduit 320 a further includes a lower injection part 326 .
- the lower injection part 326 is located in a lower inner space of the housing 300 a to inject a decomposition gas into a process fluid received in the housing 300 a .
- the lower injection part 326 may be inclined with respect to the vertical direction.
- the lower injection part 326 may horizontally extend and may be configured to spray a decomposition gas from one or more locations thereof in the longitudinal direction, thereby increasing contact between the decomposition gas and the process fluid.
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Abstract
Description
- A claim for priority under 35 U.S.C. § 119 is made to Korean Patent Application No. 10-2016-0140261 filed on Oct. 26, 2016, in the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference.
- Embodiments of the inventive concept described herein relate to a substrate processing apparatus, a process fluid treating apparatus, and an ozone decomposition method.
- A substrate is subjected to a variety of processes, such as photolithography, etching, ashing, ion implantation, thin-film deposition, cleaning, and the like, to manufacture a semiconductor device or a liquid crystal display. Among these processes, an etching process is used to remove unnecessary regions from a thin film formed on the substrate, and a high etching selectivity and a high etch rate are required for the thin film.
- In an etching or cleaning process, a chemical treatment step, a rinsing step, and a drying step are generally performed on a substrate in a serial order. In the chemical treatment step, a chemical is supplied to the substrate to etch a thin film formed on the substrate or to remove foreign substances on the substrate, and in the rinsing step, a rinsing solution, such as DI water, is supplied to the substrate. Furthermore, fluid used to process the substrate may include ozone.
- Embodiments of the inventive concept provide a substrate processing apparatus, a process fluid treating apparatus, and an ozone decomposition method that effectively process a substrate.
- According to an aspect of an embodiment, a substrate processing apparatus includes a process chamber that processes a substrate with a process fluid including ozone, a discharge conduit connected to the process chamber to discharge the process fluid used to process the substrate, and a process fluid treating apparatus connected with the discharge conduit. The process fluid treating apparatus includes a housing having an inner space with a set volume in which the process fluid is received and an injection nozzle that connects the discharge conduit and the inner space of the housing.
- The injection nozzle may inject the process fluid downwards.
- The injection nozzle may include a plurality of injection holes through which the process fluid is injected.
- The injection nozzle may inject the process fluid by a spray method.
- The process fluid treating apparatus may further include a strike plate located inside the housing such that a top side of the strike plate faces the process fluid injected through the injection nozzle.
- The process fluid treating apparatus may further include a gas supply conduit that supplies gas including oxygen into the inner space of the housing.
- The process fluid treating apparatus may further include a circulation line that has opposite ends connected to the housing and allows the process fluid discharged from the housing to flow into the housing again.
- The process fluid treating apparatus may further include a gas supply conduit that supplies gas including oxygen into the inner space of the housing.
- The process fluid treating apparatus may further include a strike plate located inside the housing such that a top side of the strike plate faces the process fluid injected through the injection nozzle, and the gas supply conduit may include an upper injection part that extends toward the inner space of the housing and injects the gas into a space between the injection nozzle and the strike plate.
- The gas supply conduit may include a lower injection part that extends toward the inner space of the housing and injects the gas into the process fluid received in the inner space of the housing.
- The process fluid treating apparatus may further include a circulation line that has opposite ends connected to the housing and allows the process fluid discharged from the housing to flow into the housing again.
- The circulation line may have a turbulence creating part therein to allow the process fluid flowing through the circulation line to become turbulent.
- The turbulence creating part may have a plate shape with one or more flow holes.
- The flow holes may be formed to be inclined with respect to an axial direction of the circulation line.
- The turbulence creating part may include a first plate and a second plate that block a part of a flow passage inside the circulation line and are located to have different slopes with respect to an axial direction of the circulation line.
- A pump may be located on the circulation line.
- A heater may be located on the circulation line.
- A circulation nozzle may be located at one end of the circulation line through which the process fluid flowing through the circulation line flows into the housing again.
- The circulation nozzle may inject the process fluid downwards.
- The process fluid treating apparatus may further include a strike plate located inside the housing such that a top side of the strike plate faces the process fluid injected through the injection nozzle.
- The process fluid treating apparatus may further include a gas supply conduit that supplies gas including oxygen into the inner space of the housing.
- According to another aspect of an embodiment, a process fluid treating apparatus includes a housing having an inner space with a set volume in which a process fluid including ozone is received, a discharge conduit connected to the housing to supply the process fluid into the inner space of the housing, and a strike plate located in a moving path of the process fluid introduced by the discharge conduit.
- The process fluid treating apparatus may further include an injection nozzle located on an end portion of the discharge conduit to inject the process fluid into the inner space of the housing.
- According to another aspect of an embodiment, a process fluid treating apparatus includes a housing having an inner space with a set volume in which a process fluid including ozone is received, a discharge conduit connected to the housing to supply the process fluid into the inner space of the housing, and a circulation line that has opposite ends connected to the housing and allows the process fluid discharged from the housing to flow into the housing again.
- The circulation line may have a turbulence creating part therein to allow the process fluid flowing through the circulation line to become turbulent.
- A pump may be located on the circulation line.
- A heater may be located on the circulation line.
- A circulation nozzle that injects the process fluid downwards may be located at one end of the circulation line through which the process fluid flowing through the circulation line flows into the housing again.
- According to another aspect of an embodiment, a method of decomposing ozone included in a process fluid includes recovering the process fluid, which includes the ozone and has been used to process a substrate, into an inner space of a housing, in which case the process fluid is injected into the inner space of the housing by a spray method.
- The process fluid may be injected toward a strike plate disposed in the inner space of the housing.
- The method may further include circulating the process fluid injected into the housing through a circulation line and decomposing the ozone by using a force applied to the process fluid in the circulation process.
- The process fluid may flow through the circulation line while creating turbulence.
- The process fluid may be heated while flowing through the circulation line.
- Gas including oxygen may be supplied into the inner space of the housing.
- The gas may be supplied to a part into which the process fluid is injected.
- The gas may be supplied into the process fluid that is received in the housing after injected.
- According to embodiments of the inventive concept, it is possible to provide a substrate processing apparatus, a process fluid treating apparatus, and an ozone decomposition method that are capable of effectively processing a substrate.
- The above and other objects and features will become apparent from the following description with reference to the following figures, wherein like reference numerals refer to like parts throughout the various figures unless otherwise specified, and wherein:
-
FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the inventive concept; -
FIG. 2 illustrates a connection relation between elements for supplying a process fluid to a process chamber and recovering the same from the process chamber; -
FIG. 3 illustrates a process fluid treating apparatus; -
FIG. 4 illustrates an injection nozzle; -
FIG. 5 is a partially sectioned view of a circulation line; -
FIG. 6 is a longitudinal sectional view of a turbulence creating part; -
FIG. 7 is a partially sectioned view of a circulation line according to another embodiment; and -
FIG. 8 illustrates a process fluid treating apparatus according to another embodiment. - Hereinafter, embodiments of the inventive concept will be described in more detail with reference to the accompanying drawings. The inventive concept may, however, be embodied in different forms and should not be constructed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. In the drawings, the dimensions of elements are exaggerated for clarity of illustration.
-
FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the inventive concept. - Referring to
FIG. 1 , asubstrate processing apparatus 1 includes anindex module 10 and aprocess module 20. Theindex module 10 has a plurality ofload ports 11 and atransfer frame 14. Theload ports 11, thetransfer frame 14, and theprocess module 20 are sequentially arranged in a row. Hereinafter, the direction in which theload ports 11, thetransfer frame 14, and theprocess module 20 are arranged is referred to as afirst direction 2. When viewed from above, a direction perpendicular to thefirst direction 2 is referred to as asecond direction 3, and a direction perpendicular to a plane that includes thefirst direction 2 and thesecond direction 3 is referred to as athird direction 4. -
Carriers 13 having substrates W received therein are seated on theload ports 11, respectively. The plurality ofload ports 11 are arranged in a row in thesecond direction 3. Fourload ports 11 are illustrated inFIG. 1 . However, the number ofload ports 11 may increase or decrease depending on conditions, such as process efficiency and footprint of theprocess module 20. Eachcarrier 13 has a plurality of slots (not illustrated) formed therein to support edges of the substrates W. The plurality of slots are arranged in thethird direction 4, and the substrates W are located in thecarrier 13 so as to be stacked one above another in thethird direction 4 with a spacing gap therebetween. A front opening unified pod (FOUP) may be used as thecarrier 13. - The
process module 20 has abuffer unit 22, atransfer chamber 25, andprocess chambers 26. Thetransfer chamber 25 is arranged such that the longitudinal direction thereof is parallel to thefirst direction 2. Theprocess chambers 26 are disposed on opposite sides of thetransfer chamber 25 in thesecond direction 3. Theprocess chambers 26 on one side of thetransfer chamber 25 and theprocess chambers 26 on the opposite side of thetransfer chamber 25 are located in a symmetric arrangement with respect to thetransfer chamber 25. Some of theprocess chambers 26 are arranged in the longitudinal direction of thetransfer chamber 25. Furthermore, theother process chambers 26 are stacked one above another. That is, theprocess chambers 26 may be arranged in an A×B array (A and B being natural numbers of 1 or larger) on the opposite sides of thetransfer chamber 25. Here, A is the number of rows in which theprocess chambers 26 are arranged in thefirst direction 2, and B is the number of columns in which theprocess chambers 26 are arranged in thethird direction 4. In the case where four or sixprocess chambers 26 are disposed on the opposite sides of thetransfer chamber 25, theprocess chambers 26 may be arranged in a 2×2 or 3×2 array. The number ofprocess chambers 26 may increase or decrease. Alternatively, theprocess chambers 26 may be disposed on only one side of thetransfer chamber 25. In another case, theprocess chambers 26 may be disposed in a single layer on the opposite sides of thetransfer chamber 25. - The
buffer unit 22 is disposed between thetransfer frame 14 and thetransfer chamber 25. Thebuffer unit 22 has a space in which substrates W stay before transferred between thetransfer chamber 25 and thetransfer frame 14. Thebuffer unit 22 has a plurality of slots (not illustrated) therein, on which substrates W are placed. The plurality of slots (not illustrated) are separated from one another in thethird direction 4. Thebuffer unit 22 is open at one side facing thetransfer frame 14 and at an opposite side facing thetransfer chamber 25. - The
transfer frame 14 transfers substrates W between thecarriers 13 seated on theload ports 11 and thebuffer unit 22. Thetransfer frame 14 includes anindex rail 17 and anindex robot 16. Theindex rail 17 is arranged such that the longitudinal direction thereof is parallel to thesecond direction 3. Theindex robot 16 is installed on theindex rail 17 and linearly moves along theindex rail 17 in thesecond direction 3. Theindex robot 16 has a base 16 a, abody 16 b, and a plurality ofindex arms 16 c. The base 16 a is installed so as to be movable along theindex rail 17. Thebody 16 b is coupled to the base 16 a. Thebody 16 b may be configured to move on the base 16 a in thethird direction 4. Furthermore, thebody 16 b may be configured to rotate on the base 16 a. The plurality ofindex arms 16 c are coupled to thebody 16 b to move forward and rearward relative to thebody 16 b. The plurality ofindex arms 16 c may operate individually. Theindex arms 16 c are stacked one above another in thethird direction 4 with a spacing gap therebetween. Some of theindex arms 16 c may be used to transfer substrates W from theprocess module 20 to thecarriers 13, and theother index arms 16 c may be used to transfer substrates W from thecarriers 13 to theprocess module 20. Accordingly, it is possible to prevent particles generated from substrates W to be processed from adhering to processed substrates W in the process in which theindex robot 16 carries the substrates W into and out of theprocess module 20. - The
transfer chamber 25 transfers substrates W between thebuffer unit 22 and theprocess chambers 26 and between theprocess chambers 26. Thetransfer frame 25 includes aguide rail 29 and amain robot 24. Theguide rail 29 is arranged such that the longitudinal direction thereof is parallel to thefirst direction 2. Themain robot 24 is installed on theguide rail 29 and linearly moves along theguide rail 29 in thefirst direction 2. Themain robot 24 has a base 24 a, abody 24 b, and a plurality ofmain arms 24 c. The base 24 a is installed so as to be movable along theguide rail 29. Thebody 24 b is coupled to the base 24 a. Thebody 24 b may be configured to move on the base 24 a in thethird direction 4. Furthermore, thebody 24 b may be configured to rotate on the base 24 a. The plurality ofmain arms 24 c are coupled to thebody 24 b to move forward and rearward relative to thebody 24 b. The plurality ofmain arms 24 c may operate individually. Themain arms 24 c are stacked one above another in thethird direction 4 with a spacing gap therebetween. Themain arm 24 c used to transfer substrates W from thebuffer unit 22 to theprocess chambers 26 may differ from themain arm 24 c used to transfer substrates W from theprocess chambers 26 to thebuffer unit 22. - The
process chambers 26 havesubstrate processing apparatuses 30 therein, respectively, to perform a cleaning process on a substrate W. The substrate processing apparatuses 30 (seeFIG. 2 ) in therespective process chambers 26 may have different structures according to the types of cleaning processes to be performed. Alternatively, thesubstrate processing apparatuses 30 in therespective process chambers 26 may have the same structure. In another case, theprocess chambers 26 may be distinguished into a plurality groups; and thesubstrate processing apparatuses 30 in theprocess chambers 26 belonging to the same group may have the same structure, and thesubstrate processing apparatuses 30 in theprocess chambers 26 belonging to different groups may have different structures. For example, in the case where theprocess chambers 26 are distinguished into two groups, a first group ofprocess chambers 26 may be disposed on one side of thetransfer chamber 25, and a second group ofprocess chambers 26 may be disposed on the opposite side of thetransfer chamber 25. Alternatively, on the opposite sides of thetransfer chamber 25, the first group ofprocess chambers 26 may be disposed in a lower layer, and the second group ofprocess chambers 26 may be disposed in an upper layer. The first group ofprocess chambers 26 may be distinguished from the second group ofprocess chambers 26 according to the types of chemicals to be used and the types of cleaning methods. -
FIG. 2 illustrates a connection relation between elements for supplying a process fluid to a process chamber and recovering the same from the process chamber. - Referring to
FIG. 2 , theprocess chamber 26 is connected with aprocess fluid supply 31 and a processfluid treating apparatus 32. A process fluid may be ozone water or a mixture of ozone water and a liquid chemical. - The
process chamber 26 has anozzle 100 and acup 200 inside. Theprocess fluid supply 31 supplies the process fluid to thenozzle 100 through asupply conduit 110. WhileFIG. 2 illustrates that theprocess fluid supply 31 is connected with thesingle process chamber 26, theprocess fluid supply 31 may be connected with two ormore process chambers 26. The process fluid supplied to a substrate through thenozzle 100 to perform a process is recovered by thecup 200 and then discharged through adischarge conduit 210 connected to thecup 200. Arecovery conduit 220 may be connected to thedischarge conduit 210 and theprocess fluid supply 31 to supply the process fluid recovered through thecup 200 to theprocess fluid supply 31. -
FIG. 3 illustrates a process fluid treating apparatus, andFIG. 4 illustrates an injection nozzle. - The process
fluid treating apparatus 32 is connected to thedischarge conduit 210 to remove ozone included in a process fluid or to reduce the amount of ozone included in the process fluid. - Referring to
FIG. 3 , the processfluid treating apparatus 32 includes ahousing 300, aninjection nozzle 310, agas supply conduit 320, astrike plate 330, and acirculation line 350. - The
housing 300 has a space in which to receive the process fluid introduced through thedischarge conduit 210. Thehousing 300 has an inner space formed therein to receive a set amount of process fluid. - The
injection nozzle 310 connects thedischarge conduit 210 and the inner space of thehousing 300 to allow the process fluid introduced into thedischarge conduit 210 to be supplied into the inner space of thehousing 300. Theinjection nozzle 310 has a plurality of injection holes 311 formed therein, and the process fluid may be injected through the injection holes 311 in the form of a plurality of streams or in a mist form by a spray method. Accordingly, it is possible to increase a contact area between the process fluid and gas in the inner space of thehousing 300, thereby enhancing the degree of decomposition of ozone included in the process fluid. - The
gas supply conduit 320 supplies, into the inner space of thehousing 300, a decomposition gas that reacts with ozone included in the process fluid to facilitate decomposition of the ozone. The decomposition gas includes oxygen. For example, the decomposition gas may be air. - The
strike plate 330 is disposed in the inner space of thehousing 300. Thestrike plate 330 is located such that one side thereof faces the process fluid injected through theinjection nozzle 310. For example, theinjection nozzle 310 may be located on the top side or a lateral side of thehousing 300 to inject the process fluid downwards. A part of a lateral side of thestrike plate 330 may be secured to an inside of thehousing 300, and the top side of thestrike plate 330 may be located in the path along which the process fluid injected through theinjection nozzle 310 moves. Accordingly, the process fluid injected through theinjection nozzle 310 collides with thestrike plate 330, and the degree of decomposition of ozone is enhanced by forces applied to the process fluid during the collision and an effect, such as an increase in the area by which particles react with the gas while being broken in a scattering process after the collision. -
FIG. 5 is a partially sectioned view of a circulation line, andFIG. 6 is a longitudinal sectional view of a turbulence creating part. - The
circulation line 350 provides a path along which the process fluid received in thehousing 300 circulates. One end of thecirculation line 350 is connected to the bottom of thehousing 300, and the process fluid received in thehousing 300 flows into thecirculation line 350. An opposite end of thecirculation line 350 is connected to the top of thehousing 300, and the process fluid in thecirculation line 350 flows into thehousing 300 again. Thecirculation line 350 has one or moreturbulence creating parts 3000 therein. Theturbulence creating parts 3000 have a plate shape having one ormore flow holes 3100 formed therein. Accordingly, the circulating fluid becomes turbulent while colliding with theturbulence creating parts 3000 and flowing through the flow holes 3100, and forces caused by the turbulent flow facilitate decomposition of ozone. The flow holes 3100 formed in theturbulence creating parts 3000 may be inclined with respect to the axial direction of thecirculation line 350. Accordingly, the flow direction of the process fluid passing through the flow holes 3100 may be inclined with respect to the axial direction of thecirculation line 350, and thus turbulence may be easily created. Furthermore, in the case where theturbulence creating part 3000 has the plurality offlow holes 3100 formed therein, the flow holes 3100 may be inclined in different directions to enhance the degree to which turbulence is created. - A
pump 351 may be located on thecirculation line 350. Thepump 351 may be located adjacent to the one end of thecirculation line 350 into which the process fluid flows. Thepump 351 applies pressure to the process fluid to allow the process fluid to effectively flow while creating turbulence. Furthermore, the pressure applied by thepump 351 may facilitate decomposition of ozone included in the process fluid. - A
heater 352 may be located on thecirculation line 350. Theheater 352 may heat the process fluid to facilitate the decomposition of ozone. - A
circulation nozzle 353 is located at the opposite end of thecirculation line 350. Thecirculation nozzle 353 has a plurality of holes formed therein, similarly to theinjection nozzle 310 ofFIG. 4 . Accordingly, the process fluid flowing into thehousing 300 again through thecirculation line 350 may be injected in the form of a plurality of streams or in a mist form, and thus the degree of decomposition of ozone may be enhanced. Thecirculation nozzle 353 may be located on the top side or a lateral side of thehousing 300 to inject the process fluid downwards toward thestrike plate 330, thereby permitting the injected process fluid to collide with thestrike plate 330. - If ozone included in the process fluid is decomposed as a setting time passes, a discharge valve 371 on a
discharge line 370 connected to the bottom of thehousing 300 is opened to discharge the process fluid from thehousing 300. The gas inside thehousing 300 may be discharged through agas discharge line 360 by opening agas discharge valve 361 on thegas discharge line 360. The discharge of the gas inside thehousing 300 may be performed while ozone is being decomposed. -
FIG. 7 is a partially sectioned view of a circulation line according to another embodiment. - Referring to
FIG. 7 ,turbulence creating parts 3200 may include afirst plate 3210 and asecond plate 3220. Thefirst plate 3210 and thesecond plate 3220 may have a plate shape and may be located to block a part of a flow passage inside acirculation line 350 a. Thefirst plate 3210 and thesecond plate 3220 may be installed at different slopes with respect to the axial direction of thecirculation line 350 a. For example, thefirst plate 3210 and thesecond plate 3220 may be obliquely installed in different directions from the axial direction of thecirculation line 350 a, as illustrated inFIG. 7 . In another example, one of thefirst plate 3210 and thesecond plate 3220 may be installed to be perpendicular to the axial direction of thecirculation line 350 a, and the other may be obliquely installed to be inclined with respect to the axial direction of thecirculation line 350 a. Accordingly, a process fluid may collide with theturbulence creating parts 3200 in a flow process and may flow through the space between thefirst plate 3210 and thesecond plate 3220 while creating turbulence, thereby facilitating decomposition of ozone included in the process fluid. -
FIG. 8 illustrates a process fluid treating apparatus according to another embodiment. - Referring to
FIG. 8 , a processfluid treating apparatus 32 a includes ahousing 300 a, aninjection nozzle 310 a, agas supply conduit 320 a, astrike plate 330 a, and acirculation line 350 a. - Since the
housing 300 a, theinjection nozzle 310 a, thestrike plate 330 a, thecirculation line 350 a, adischarge line 370 a, agas discharge line 360 a, and apump 351 a, aheater 352 a, and acirculation nozzle 353 a located along thecirculation line 350 a are the same as those of the processfluid treating apparatus 32 ofFIG. 3 , repetitive descriptions thereof will be omitted. - The
gas supply conduit 320 a extends toward an inner space of thehousing 300 a. Thegas supply conduit 320 a includes anupper injection part 325. Theupper injection part 325 is configured to inject a decomposition gas into the space between theinjection nozzle 310 a and thestrike plate 330 a. Accordingly, a process fluid injected through theinjection nozzle 310 a and a process fluid injected through thecirculation nozzle 353 a may make frequent contact with the decomposition gas before and after a collision with thestrike plate 330 a, and thus the degree of decomposition of ozone may be enhanced. - The
gas supply conduit 320 a further includes alower injection part 326. Thelower injection part 326 is located in a lower inner space of thehousing 300 a to inject a decomposition gas into a process fluid received in thehousing 300 a. Thelower injection part 326 may be inclined with respect to the vertical direction. For example, thelower injection part 326 may horizontally extend and may be configured to spray a decomposition gas from one or more locations thereof in the longitudinal direction, thereby increasing contact between the decomposition gas and the process fluid. - The above description exemplifies the inventive concept. Furthermore, the above-mentioned contents describe exemplary embodiments of the inventive concept, and the inventive concept may be used in various other combinations, changes, and environments. That is, variations or modifications can be made to the inventive concept without departing from the scope of the inventive concept that is disclosed in the specification, the equivalent scope to the written disclosures, and/or the technical or knowledge range of those skilled in the art. The written embodiments describe the best state for implementing the technical spirit of the inventive concept, and various changes required in specific applications and purposes of the inventive concept can be made. Accordingly, the detailed description of the inventive concept is not intended to restrict the inventive concept in the disclosed embodiment state. In addition, it should be construed that the attached claims include other embodiments.
- While the inventive concept has been described with reference to embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are not limiting, but illustrative.
Claims (36)
Priority Applications (1)
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US17/133,104 US20210114902A1 (en) | 2016-10-26 | 2020-12-23 | Substrate processing apparatus, process fluid treating apparatus, and ozone decomposition method |
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KR1020160140261A KR101933080B1 (en) | 2016-10-26 | 2016-10-26 | Substrate treating apparatus, process fluid treating apparatus and ozone decomposition method |
KR10-2016-0140261 | 2016-10-26 |
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US17/133,104 Continuation US20210114902A1 (en) | 2016-10-26 | 2020-12-23 | Substrate processing apparatus, process fluid treating apparatus, and ozone decomposition method |
Publications (1)
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US20180111860A1 true US20180111860A1 (en) | 2018-04-26 |
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US15/791,975 Abandoned US20180111860A1 (en) | 2016-10-26 | 2017-10-24 | Substrate processing apparatus, process fluid treating apparatus, and ozone decomposition method |
US17/133,104 Pending US20210114902A1 (en) | 2016-10-26 | 2020-12-23 | Substrate processing apparatus, process fluid treating apparatus, and ozone decomposition method |
Family Applications After (1)
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Country | Link |
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US (2) | US20180111860A1 (en) |
KR (1) | KR101933080B1 (en) |
CN (1) | CN107993960B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102218711B1 (en) * | 2018-12-18 | 2021-02-22 | 세메스 주식회사 | Dissolved ozone removal unit and Apparatus for treating a substrate including the unit, Method for treating a substrate |
KR102202463B1 (en) * | 2019-03-13 | 2021-01-14 | 세메스 주식회사 | Apparatus and Method for treating substrate |
KR20200141314A (en) * | 2019-06-10 | 2020-12-18 | 세메스 주식회사 | Apparatus for treating substrate |
KR20240061999A (en) | 2022-11-01 | 2024-05-08 | 세메스 주식회사 | Process fluid treatment apparatus, wafer cleaning apparatus and semiconductor manufacturing equipment including the same |
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JPH10328649A (en) * | 1997-05-30 | 1998-12-15 | Shibaura Eng Works Co Ltd | Ozone water treatment device and cleaning device |
US7617836B2 (en) * | 2005-03-18 | 2009-11-17 | Semes Co., Ltd. | System and method for supplying functional water |
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JPH07124404A (en) * | 1993-11-08 | 1995-05-16 | Toshiba Corp | Degasifier |
EP0697236A1 (en) * | 1994-08-15 | 1996-02-21 | Hoechst Aktiengesellschaft | Filter material and process for elimination of ozone from gases and liquides |
JPH08257547A (en) * | 1995-03-24 | 1996-10-08 | Shimadzu Corp | Deaerating apparatus |
JP4347426B2 (en) * | 1996-09-26 | 2009-10-21 | 芝浦メカトロニクス株式会社 | Cleaning processing equipment |
JP2001009206A (en) * | 1999-06-25 | 2001-01-16 | Noritake Co Ltd | Multistage defoaming and degasing device |
JP3819732B2 (en) * | 2001-05-28 | 2006-09-13 | 横河電機株式会社 | Gas dissolving device |
JP2003093781A (en) * | 2001-09-26 | 2003-04-02 | Matsushita Electric Ind Co Ltd | Washing-and-drying machine |
JP4222572B2 (en) * | 2005-09-23 | 2009-02-12 | 貞利 渡部 | Nanofluid generator and cleaning apparatus |
JP5173882B2 (en) * | 2009-02-20 | 2013-04-03 | 西日本技術開発株式会社 | Raw water treatment equipment containing organic pollutants or toxic substances |
-
2016
- 2016-10-26 KR KR1020160140261A patent/KR101933080B1/en active IP Right Grant
-
2017
- 2017-10-24 US US15/791,975 patent/US20180111860A1/en not_active Abandoned
- 2017-10-26 CN CN201711015273.3A patent/CN107993960B/en active Active
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2020
- 2020-12-23 US US17/133,104 patent/US20210114902A1/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10328649A (en) * | 1997-05-30 | 1998-12-15 | Shibaura Eng Works Co Ltd | Ozone water treatment device and cleaning device |
US7617836B2 (en) * | 2005-03-18 | 2009-11-17 | Semes Co., Ltd. | System and method for supplying functional water |
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CN107993960B (en) | 2021-08-24 |
CN107993960A (en) | 2018-05-04 |
US20210114902A1 (en) | 2021-04-22 |
KR101933080B1 (en) | 2018-12-28 |
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