US20180096903A1 - Fan-out panel level package and method of fabricating the same - Google Patents

Fan-out panel level package and method of fabricating the same Download PDF

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Publication number
US20180096903A1
US20180096903A1 US15/832,938 US201715832938A US2018096903A1 US 20180096903 A1 US20180096903 A1 US 20180096903A1 US 201715832938 A US201715832938 A US 201715832938A US 2018096903 A1 US2018096903 A1 US 2018096903A1
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Prior art keywords
substrate
fan
dies
disposed
out substrate
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Abandoned
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US15/832,938
Inventor
Younghoon Sohn
Jinsung Kim
Yusin Yang
Chungsam Jun
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority to US15/832,938 priority Critical patent/US20180096903A1/en
Publication of US20180096903A1 publication Critical patent/US20180096903A1/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02379—Fan-out arrangement
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/141—Disposition
    • H01L2224/1412—Layout
    • H01L2224/1413—Square or rectangular array
    • H01L2224/14131—Square or rectangular array being uniform, i.e. having a uniform pitch across the array
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    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1434—Memory
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/152—Disposition
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

Definitions

  • Embodiments of the inventive concepts relate to a package and/or a method of fabricating the same and, more particularly, to a fan-out panel level package and/or a method of fabricating the same.
  • Some embodiments of the inventive concepts may provide a fan-out panel level package capable of reducing, minimizing or preventing an interconnection failure caused by misalignment between a fan-out substrate and a die and/or a method of fabricating the same.
  • a method of fabricating a package may include providing a mold substrate supporting dies in cavities of a fan-out substrate, obtaining an image of the fan-out substrate and the dies to detect positions of the dies with respect to the fan-out substrate in the image, and forming interconnection lines. At least one of the interconnection lines may include a first portion extending from the fan-out substrate to a target position on the cavity disposed between the fan-out substrate and one of the dies, the one of the dies disposed at the detected position different from the target position, and a second portion extending from the one of the dies to the fan-out substrate.
  • a package may include a mold substrate, a fan-out substrate disposed on the mold substrate and having a cavity, a die disposed on the mold substrate in the cavity, and interconnection lines disposed on the cavity between the fan-out substrate and the die and connecting the die to the fan-out substrate.
  • Each of the interconnection lines may include a first portion extending from the fan-out substrate to the die in a first direction, and a second portion connected to the first portion and extending from the die to the fan-out substrate in a second direction different from the first direction.
  • a method for forming interconnection lines for a package by detecting if a selected die is disposed within an alignment tolerance of a target position, forming first contact holes by removing portions of an interlayer insulating layer disposed on substrate electrodes of the fan-out substrate and pad electrodes of the selected die disposed at the detected position, if the selected die is disposed within the alignment tolerance, and forming the interconnection lines by a patterning process, the interconnection lines connecting one or some of substrate electrodes to one or some of pad electrodes of the selected die.
  • FIG. 1 is a flow chart illustrating a method of fabricating a package, according to some embodiments of the inventive concepts.
  • FIG. 2 is a flow chart illustrating an embodiment of an operation of providing a mold substrate in FIG. 1 .
  • FIGS. 3A to 8A are plan views illustrating an embodiment of the operation of providing the mold substrate in FIG. 1 .
  • FIGS. 3B to 8B are cross-sectional views taken along lines I-I′ of FIGS. 3A to 8A , respectively.
  • FIGS. 9A and 9B are schematic views illustrating first and second optical measurement apparatuses detecting positions of dies of FIGS. 8A and 8B .
  • FIG. 10 illustrates an image detected by the optical measurement apparatuses of FIGS. 9A and 9B .
  • FIG. 11A is a plan view illustrating an embodiment of an operation of forming an interlayer insulating layer in FIG. 1 .
  • FIG. 11B is a cross-sectional view taken along a line I-I′ of FIG. 11A .
  • FIG. 12 is a flow chart illustrating an embodiment of an operation of forming interconnection lines in FIG. 1 .
  • FIG. 13 is a flow chart illustrating an embodiment of an operation of forming first contact holes in FIG. 12 .
  • FIGS. 14A to 19A are plan views illustrating an embodiment of the operation of forming the first contact holes in FIG. 12 .
  • FIGS. 14B to 19B are cross-sectional views taken along lines I-I′ of FIGS. 14A to 19A , respectively.
  • FIG. 20 is a schematic view illustrating an embodiment of an exposure apparatus performing an exposure process on a first photoresist layer of FIGS. 14A and 14B .
  • FIG. 21 is a flow chart illustrating an embodiment of an operation of forming interconnection lines by a patterning process in FIG. 12 .
  • FIGS. 22A to 28A are plan views illustrating an embodiment of the operation of forming the interconnection lines by the patterning process in FIG. 12 .
  • FIGS. 22B to 28B are cross-sectional views taken along lines I-I′ of FIGS. 22A to 28A , respectively.
  • FIG. 29A is a plan view illustrating an embodiment of an operation of forming a passivation layer in FIG. 1 .
  • FIG. 29B is a cross-sectional view taken along a line I-I′ of FIG. 29A .
  • FIG. 30A is a plan view illustrating an embodiment of an operation of forming interconnection pads in FIG. 1 .
  • FIG. 30B is a cross-sectional view taken along a line I-I′ of FIG. 30A .
  • FIG. 31A is a plan view illustrating an embodiment of an operation of forming bumps in FIG. 1 .
  • FIG. 31B is a cross-sectional view taken along a line I-I′ of FIG. 31A .
  • FIG. 1 illustrates a method of fabricating a package, according to some embodiments of the inventive concepts.
  • the method of fabricating the package may include providing a mold substrate (S 100 ), detecting positions of dies in cavities (S 200 ), checking whether the dies are normally disposed (S 300 ), storing addresses of the dies (S 310 ), storing the detected position of each of the dies (S 400 ), forming an interlayer insulating layer (S 500 ), forming interconnection lines (S 600 ), measuring the interconnection lines (S 700 ), checking whether all of the interconnection lines are formed (S 800 ), forming a passivation layer (S 900 ), forming interconnection pads (S 1000 ), and forming bumps (S 1100 ).
  • FIG. 2 illustrates an embodiment of the operation S 100 of providing the mold substrate 14 in FIG. 1 .
  • FIGS. 3A to 8A are plan views illustrating an embodiment of the operation S 100 of providing the mold substrate 14 in FIG. 1 .
  • FIGS. 3B to 8B are cross-sectional views taken along lines I-I′ of FIGS. 3A to 8A , respectively.
  • the operation S 100 of providing the mold substrate 14 may include providing a fan-out substrate 2 (S 110 ), forming cavities 6 (S 120 ), forming a dummy substrate 8 (S 130 ), providing dies 10 (S 140 ), forming the mold substrate 14 (S 150 ), and removing the dummy substrate 8 (S 160 ).
  • the fan-out substrate 2 in which substrate electrodes 4 are formed may be provided (S 110 ).
  • the fan-out substrate 2 may be a copper clad laminate (CCL) substrate having the substrate electrodes 4 .
  • the substrate electrodes 4 may include through-electrodes disposed in the fan-out substrate 2 .
  • the substrate electrodes 4 may be arranged along a quadrilateral ring shape in the fan-out substrate 2 when viewed from a plan view.
  • the substrate electrodes 4 may include copper formed by an electroplating method.
  • cavities 6 may be formed in the fan-out substrate 2 (S 120 ).
  • each of the cavities 6 may have a square shape.
  • the cavities 6 may be formed by a printing method or a punching method.
  • the substrate electrodes 4 may be disposed around each of the cavities 6 .
  • the dummy substrate 8 may be formed under the fan-out substrate 2 (S 130 ).
  • the dummy substrate 8 may be formed on a bottom surface of the fan-out substrate 2 (S 130 ).
  • the dummy substrate 8 may include an adhesive tape film.
  • the dummy substrate 8 may adhere to the bottom surface of the fan-out substrate 2 .
  • the dummy substrate 8 may block the cavities 6 . In other words, the dummy substrate 8 may close bottom ends of the cavities 6 .
  • the dies 10 may be provided on the dummy substrate 8 in the cavities 6 , respectively (S 140 ).
  • the dies 10 may be provided into the cavities 6 by a picker (not shown).
  • each of the dies 10 may be a memory chip, or a semiconductor chip corresponding to an application processor (AP) chip.
  • AP application processor
  • each of the dies 10 may include a plurality of pad electrodes 12 .
  • the pad electrodes 12 may adhere to the dummy substrate 8 .
  • Each of the dies 10 may have a square shape smaller than the cavities 6 .
  • the mold substrate 14 may be formed on the fan-out substrate 2 , the dummy substrate 8 , and the dies 10 (S 150 ).
  • the mold substrate 14 may include resin or polymer.
  • the mold substrate 14 may be melted at a high temperature.
  • the melted mold substrate 14 may be provided onto the fan-out substrate 2 , the dummy substrate 8 , and the dies 10 . Thereafter, the mold substrate 14 may be cooled to a room temperature so as to be hardened.
  • the dummy substrate 8 may be removed (S 160 ).
  • the dummy substrate 8 may be peeled from the mold substrate 14 , the fan-out substrate 2 , and the dies 10 by external force.
  • the pad electrodes 12 of the dies 10 may be exposed outward.
  • the mold substrate 14 , the fan-out substrate 2 , and the dies 10 may be flipped or turned over such that the mold substrate 14 is disposed under the fan-out substrate 2 and the dies 10 .
  • left and right portions of the mold substrate 14 may be rotated on a center line of the mold substrate 14 , and thus the mold substrate 14 may be flipped or turned over.
  • FIGS. 9A and 9B illustrate first and second optical measurement apparatuses 100 and 100 a detecting positions of the dies 10 of FIGS. 8A and 8B .
  • FIG. 10 illustrates a first image 101 detected by the first and second optical measurement apparatuses 100 and 100 a of FIGS. 9A and 9B .
  • the first and second optical measurement apparatuses 100 and 100 a may detect a position of each of the dies 10 on the mold substrate 14 in the operation S 200 .
  • the first and second optical measurement apparatuses 100 and 100 a may obtain the first image 101 of the fan-out substrate 2 and the dies 10 on the mold substrate 14 .
  • the first and second optical measurement apparatuses 100 and 100 a may calculate the position of each of the dies 10 with respect to the fan-out substrate 2 in the first image 101 .
  • the first optical measurement apparatus 100 may be a coaxial optical system.
  • the first optical measurement apparatus 100 may include a first stage 110 , a first driving control part 120 , a first displacement sensor 130 , a first light source part 140 , a first projection part 150 , a first detecting part 160 , and a first control part 170 .
  • the first stage 110 may receive the mold substrate 14 and may horizontally move the mold substrate 14 .
  • the first driving control part 120 may control the movement of the first stage 110 and the mold substrate 14 .
  • the first displacement sensor 130 may sense a displacement of the mold substrate 14 .
  • the first driving control part 120 may receive a sensing signal of the first displacement sensor 130 to control the displacement of the mold substrate 14 .
  • the first light source part 140 may provide first incident light 141 to the first projection part 150 .
  • the first projection part 150 may provide the first incident light 141 to the mold substrate 14 .
  • the first projection part 150 may provide first reflected light 161 , reflected from the mold substrate 14 , to the first detecting part 160 .
  • the first detecting part 160 may detect an optical signal.
  • the first detecting part 160 may include an image sensor.
  • the first control part 170 may obtain the first image 101 from the optical signal of the first detecting part 160 .
  • the first control part 170 may detect or calculate the positions of the dies 10 with respect to the fan-out substrate 2 in the first image 101 .
  • the second optical measurement apparatus 100 a may be an oblique optical system.
  • the second optical measurement apparatus 100 a may include a second stage 110 a , a second driving control part 120 a , a second displacement sensor 130 a , a second light source part 140 a , a second projection part 150 a , a second detecting part 160 a , and a second control part 170 a .
  • the second stage 110 a , the second driving control part 120 a , the second displacement sensor 130 a , the second light source part 140 a , the second detecting part 160 a , and the second control part 170 a may be configured to be the same as the first stage 110 , the first driving control part 120 , the first displacement sensor 130 , the first light source part 140 , the first detecting part 160 , and the first control part 170 of FIG. 9A , respectively.
  • the second projection part 150 a may include an incident-light projection part 152 and a reflected-light projection part 154 .
  • the incident-light projection part 152 and the reflected-light projection part 154 may be connected to the second light source part 140 a and the second detecting part 160 a , respectively.
  • the incident-light projection part 152 and the reflected-light projection part 154 may be disposed to be inclined with respect to the mold substrate 14 .
  • the incident-light projection part 152 and the reflected-light projection part 154 may be symmetrically disposed on the mold substrate 14 .
  • the incident-light projection part 152 may provide second incident light 141 a to the mold substrate 14 in a first direction inclined with respect to a top surface of the mold substrate 14 .
  • the reflected-light projection part 154 may receive second reflected light 161 a in a second direction inclined with respect to the top surface of the mold substrate 14 .
  • the first direction and the second direction may be symmetrical.
  • the first and second control parts 170 and 170 a may detect or calculate a position of each of the dies 10 with respect to the fan-out substrate 2 in the first image 101 .
  • the first and second control parts 170 and 170 a may read a pre-set position 102 of each of the dies 10 from a database (not shown).
  • the detected position of at least one of the dies 10 may be different from the pre-set position 102 thereof.
  • one of the dies 10 may be displayed at a position 104 , rotated with respect to the pre-set position 102 , in the first image 101 .
  • the rotated position 104 may correspond to the detected position of one of the dies 10 .
  • the detected positions may include a position that is shifted in a transverse or longitudinal direction in the cavity 6 when viewed from a plan view.
  • the first and second control parts 170 and 170 a may check whether the dies 10 are normally disposed in such a way that the detected positions of the dies 10 are in alignment tolerances of the pre-set positions 102 (S 300 ).
  • the alignment tolerance of the pre-set position 102 may be about ⁇ 5 ⁇ m in the transverse direction or the longitudinal direction of the cavity 6 .
  • a rotation alignment tolerance of the pre-set position 102 may be ⁇ 0.1 degree.
  • the first and second control part 170 and 170 a may check that the die 10 is not normally disposed.
  • the first and second control part 170 and 170 a may check that the die 10 is normally disposed.
  • the first and second control parts 170 and 170 a may store addresses of the dies 10 abnormally disposed beyond the (rotation) alignment tolerance into the database (not shown) (S 310 ). Thereafter, the operation S 600 of forming the interconnection lines may not be performed on the abnormal dies 10 .
  • the first and second control parts 170 and 170 a may store data of the detected positions of the dies 10 into the database (S 400 ).
  • the stored position data may be used in the operation S 600 of forming the interconnection lines.
  • FIG. 11A is a plan view illustrating an embodiment of the operation S 500 of forming the interlayer insulating layer 18 in FIG. 1 .
  • FIG. 11B is a cross-sectional view taken along a line I-I′ of FIG. 11A .
  • an interlayer insulating layer 18 may be formed on the fan-out substrate 2 , the dies 10 , and the mold substrate 14 (S 500 ).
  • the interlayer insulating layer 18 may include a silicon oxide layer or a silicon nitride layer, which is formed by a chemical vapor deposition (CVD) method.
  • the interlayer insulating layer 18 may include silica or transparent polymer, which is formed by a spin-coating method or a sol-gel method.
  • FIG. 12 illustrates an embodiment of the operation S 600 of forming the interconnection lines in FIG. 1 .
  • the operation S 600 of forming the interconnection lines may include forming first contact holes (S 610 ) and forming the interconnection lines by a patterning process (S 620 ).
  • the operation S 610 of forming the first contact holes may be an operation of removing portions of the interlayer insulating layer 18 to expose the pad electrodes 12 of the dies 10 and the substrate electrodes 4 of the fan-out substrate 2 .
  • the operation S 620 of forming the interconnection lines by the patterning process may be an operation of electrically connecting the exposed pad electrodes 12 to the exposed substrate electrodes 4 .
  • FIG. 13 illustrates an embodiment of the operation S 610 of forming the first contact holes 16 in FIG. 12 .
  • FIGS. 14A to 19A are plan views illustrating an embodiment of the operation S 610 of forming the first contact holes in FIG. 12 .
  • FIGS. 14B to 19B are cross-sectional views taken along lines I-I′ of FIGS. 14A to 19A , respectively.
  • the operation S 610 of forming the first contact holes 16 may include performing a plurality of exposure processes on a first photoresist layer 20 formed on the fan-out substrate 2 and the dies 10 .
  • the operation S 610 of forming the first contact holes 16 may include forming the first photoresist layer 20 (S 611 ), providing first ultraviolet light 241 (S 612 ), providing second ultraviolet light 251 (S 613 ), developing the first photoresist layer 20 (S 614 ), etching portions of the interlayer insulating layer 18 (S 615 ), and removing the first photoresist layer 20 (S 616 ).
  • the first photoresist layer 20 may be formed on the interlayer insulating layer 18 (S 611 ).
  • the first photoresist layer 20 may be formed on the interlayer insulating layer 18 by a spin-coating method. Thereafter, the first photoresist layer 20 may be hardened by a bake process.
  • the first photoresist layer 20 may include a positive photoresist.
  • FIG. 20 illustrates an embodiment of an exposure apparatus 200 for exposing the first photoresist layer 20 of FIGS. 14A and 14B .
  • the exposure apparatus 200 may be a double exposure apparatus.
  • the exposure apparatus 200 may include a third stage 210 , a third driving control part 220 , a third displacement sensor 230 , a first exposure part 240 , a second exposure part 250 , and a third control part 260 .
  • the third driving control part 220 may control the third stage 210 .
  • the third displacement sensor 230 may detect a position of the mold substrate 14 .
  • the first and second exposure parts 240 and 250 may be disposed above the third stage 210 .
  • the first and second exposure parts 240 and 250 may be adjacent to each other.
  • the first exposure part 240 may include a first exposure light source 242 , a first reticle 244 , and a first exposure objection lens 246 .
  • the first exposure light source 242 may generate the first ultraviolet light 241 .
  • the first reticle 244 may be disposed between the first exposure light source 242 and the first exposure objection lens 246 .
  • the first reticle 244 may transmit a portion of the first ultraviolet light 241 .
  • the first exposure objection lens 246 may provide or project the first ultraviolet light 241 onto the first photoresist layer 20 .
  • a pattern image of the first reticle 244 may be transferred to the first photoresist layer 20 by the first ultraviolet light 241 .
  • the second exposure part 250 may include a second exposure light source 252 , a second reticle 254 , and a second exposure objection lens 256 .
  • the second exposure light source 252 may generate the second ultraviolet light 251 .
  • the second reticle 254 may be disposed between the second exposure light source 252 and the second exposure objection lens 256 .
  • the second reticle 254 may transmit a portion of the second ultraviolet light 251 .
  • the second exposure objection lens 256 may provide or project the second ultraviolet light 251 onto the first photoresist layer 20 .
  • a pattern image of the second reticle 254 may be transferred to the first photoresist layer 20 by the second ultraviolet light 251 .
  • the first exposure part 240 may provide the first ultraviolet light 241 to a portion of the first photoresist layer 20 disposed on the fan-out substrate 2 (S 612 ).
  • the pattern image of the first reticle 244 may be defined as a first shot 22 .
  • the first ultraviolet light 241 may be provided to the portion, disposed around the dies 10 , of the first photoresist layer 20 through the first shot 22 .
  • the first ultraviolet light 241 may be provided to the first photoresist layer 20 disposed on the substrate electrodes 4 .
  • the second exposure part 250 may provide the second ultraviolet light 251 to other portions of the first photoresist layer 20 disposed on the dies 10 (S 613 ).
  • the pattern image of the second reticle 254 may be defined as a second shot 24 .
  • the second ultraviolet light 251 may be provided to the portions, disposed on the cavities 6 , of the first photoresist layer 20 through the second shot 24 .
  • the second shot 24 may overlap with the first shot 22 on the cavities 6 disposed between the fan-out substrate 2 and the dies 10 .
  • the third control part 260 may read the detected position data of the dies 10 from the database.
  • the second exposure part 250 may provide the second ultraviolet light 251 to the portions, disposed on the dies 10 , of the first photoresist layer 20 on the basis of the detected position data.
  • the third control part 260 may move the second exposure part 250 to the position 104 rotated from the pre-set position 102 .
  • the second exposure part 250 may provide the second ultraviolet light 251 to the first photoresist layer 20 disposed on the pad electrodes 12 of the rotated position 104 .
  • the first photoresist layer 20 may be developed to expose portions of the interlayer insulating layer 18 (S 614 ).
  • the portions of the interlayer insulating layer 18 which are disposed on the substrate electrodes 4 and the pad electrodes 12 , may be exposed by the first photoresist layer 20 developed.
  • the first photoresist layer 20 may be formed to expose the interlayer insulating layer 18 disposed on the pad electrodes 12 of the rotated die 10 .
  • the exposed portions of the interlayer insulating layer 18 may be etched to form the first contact holes 16 (S 615 ).
  • the first contact holes 16 may expose the substrate electrodes 4 and the pad electrodes 12 .
  • the first photoresist layer 20 may be removed (S 616 ).
  • the first photoresist layer 20 may be removed by an organic solvent such as alcohol or acetone.
  • the first contact holes 16 may be formed on the substrate electrodes 4 and the pad electrodes 12 of the rotated position 104 .
  • FIG. 21 illustrates an embodiment of the operation S 620 of forming the interconnection lines 40 by the patterning process in FIG. 12 .
  • FIGS. 22A to 28A are plan views illustrating an embodiment of the operation S 620 of forming the interconnection lines 40 by the patterning process in FIG. 12 .
  • FIGS. 22B to 28B are cross-sectional views taken along lines I-I′ of FIGS. 22A to 28A , respectively.
  • the operation S 620 of forming the interconnection lines 40 by the patterning process may include performing a plurality of exposure processes on a second photoresist layer 32 formed on the fan-out substrate 2 and the dies 10 .
  • the plurality of exposure processes may use a partial overlapping exposure method.
  • the operation S 620 of forming the interconnection lines by the patterning process may include forming a metal layer 30 (S 621 ), forming the second photoresist layer 32 (S 622 ), providing first ultraviolet light 241 (S 623 ), providing second ultraviolet light 251 (S 624 ), developing the second photoresist layer 32 (S 625 ), etching a portion of the metal layer 30 (S 626 ), and removing the second photoresist layer 32 (S 627 ).
  • the metal layer 30 may be formed on the interlayer insulating layer 18 , the substrate electrodes 4 , and the pad electrodes 12 (S 621 ).
  • the metal layer 30 may include aluminum or tungsten formed by a physical vapor deposition (PVD) method.
  • the second photoresist layer 32 may be formed on the metal layer 30 (S 622 ).
  • the second photoresist layer 32 may be formed on the metal layer 30 by a spin-coating method.
  • the second photoresist layer 32 may include a negative photoresist.
  • the first exposure part 240 may provide the first ultraviolet light 241 to a portion of the second photoresist layer 32 which is disposed on the fan-out substrate 2 and the cavities 6 disposed between the fan-out substrate 2 and the dies 10 (S 623 ).
  • a pattern image of a first reticle 244 for forming the interconnection lines may be defined as a third shot 34 .
  • the first ultraviolet light 241 may be provided to the portion, disposed around the dies 10 , of the second photoresist layer 32 through the third shot 34 .
  • the third shot 34 (e.g., the first ultraviolet light 241 ) may be provided to portions of the second photoresist layer 32 disposed between the substrate electrodes 4 and the pad electrodes 12 in a plan view and portions of the second photoresist layer 32 disposed on the substrate electrodes 4 .
  • the portions of the second photoresist layer 32 which are exposed to the first ultraviolet light 241 , may be disposed on the substrate electrodes 4 and between the substrate electrodes 4 and the dies 10 .
  • the second photoresist layer 32 may include first interconnection exposure portions 32 a .
  • the first interconnection exposure portions 32 a may laterally extend from on the substrate electrodes 4 of the fan-out substrate 2 to the dies 10 of the pre-set positions 102 .
  • the first ultraviolet light 241 may be provided to the second photoresist layer 32 disposed around the substrate electrodes 4 except portions of the second photoresist layer 32 disposed between the substrate electrodes 4 and the pad electrodes 12 .
  • the second exposure part 250 may provide the second ultraviolet light 251 to portions of the second photoresist layer 32 which are disposed on the dies 10 and the cavities 6 between the fan-out substrate 2 and the dies 10 (S 624 ).
  • a pattern image of a second reticle 254 for forming the interconnection lines may be defined as a fourth shot 36 .
  • the second ultraviolet light 251 may be provided to the portions, disposed on the cavities 6 , of the second photoresist layer 32 through the fourth shot 36 .
  • the fourth shot 36 may overlap with the third shot 34 on the second photoresist layer 32 disposed on the cavities 6 between the fan-out substrate 2 and the dies 10 .
  • the third control part 260 may read the detected position data of the dies 10 from the database.
  • the second exposure part 250 may expose the portions, disposed on the cavities 6 and the dies 10 , of the first photoresist layer 32 on the basis of the detected position data.
  • the third control part 260 may move the second exposure part 250 to the position 104 rotated from the pre-set position 102 .
  • the second exposure part 250 may provide the second ultraviolet light 251 to portions of the second photoresist layer 32 disposed between the substrate electrodes 4 and the pad electrodes 12 in a plan view and portions of the second photoresist layer 32 disposed on the pad electrodes 12 .
  • the portions of the second photoresist layer 32 which are exposed to the second ultraviolet light 251 , may be disposed on the pad electrodes 12 and between the fan-out substrate 2 and the pad electrodes 12 .
  • the second photoresist layer 32 may include second interconnection exposure portions 32 b .
  • the second interconnection exposure portions 32 b may laterally extend from on the pad electrodes 12 of the dies 10 of the detected positions to the fan-out substrate 2 .
  • the first interconnection exposure portions 32 a may overlap with the second interconnection exposure portions 32 b between the fan-out substrate 2 and the dies 10 when viewed from a plan view.
  • widths of the overlapping portions of the first and second interconnection exposure portions 32 a and 32 b may be increased between the die 10 disposed at the rotated position 104 and the fan-out substrate 2 .
  • the second exposure part 250 may provide the second ultraviolet light 251 to the second photoresist layer 32 disposed on the dies 10 and the cavities 6 between the fan-out substrate 2 and the dies 10 (including the rotated die 10 ) except portions of the second photoresist layer 32 disposed between the pad electrodes 12 and the substrate electrodes 4 in a plan view and except portions of the second photoresist layer 32 disposed on the pad electrodes 12 .
  • the second photoresist layer 32 may be developed to expose portions of the metal layer 30 (S 625 ).
  • the first interconnection exposure portions 32 a and the second interconnection exposure portions 32 b may remain on the metal layer 30 after the developing process. Portions of the first interconnection exposure portions 32 a may cover the substrate electrodes 4 , and portions of the second interconnection exposure portions 32 b may cover the pad electrodes 12 .
  • the metal layer 30 exposed the first and second interconnection exposure portions 32 a and 32 b may be removed to form the interconnection lines 40 (S 626 ).
  • the metal layer 30 may be etched by a dry etching method.
  • the first and second interconnection exposure portions 32 a and 32 b of the second photoresist layer 32 may be removed (S 627 ).
  • the interconnection lines 40 may be exposed outward.
  • the interconnection lines 40 may be disposed on portions of the interlayer insulating layer 18 , the substrate electrodes 4 , and the pad electrodes 12 .
  • the interconnection lines 40 may electrically connect the substrate electrodes 4 to the pad electrodes 12 .
  • widths of the interconnection lines 40 connected to the die 10 disposed at the rotated position 104 may be greater than widths of the interconnection lines 40 connected to the dies 10 disposed at the pre-set positions 102 .
  • the widths of the interconnection lines 40 may be increased on the cavity 6 between the fan-out substrate 2 and the die 10 disposed at the rotated position 104 .
  • Some of the interconnection lines 40 may extend from the substrate electrodes 4 of the fan-out substrate 2 onto the dies 10 of the pre-set positions 102 .
  • Others of the interconnection lines 40 may extend from the pad electrodes 12 of the die 10 of the rotated position 104 onto the fan-out substrate 2 .
  • the first and second interconnection exposure portions 32 a and 32 b of FIG. 27A which are disposed on the cavity 6 between the fan-out substrate 2 and the die 10 of the rotated position 104 , may not be completely aligned with each other but may partially overlap with each other.
  • the interconnection lines 40 on disposed on the cavity 6 between the fan-out substrate 2 and the die 10 of the rotated position 104 may have increased widths and may not be broken. Since the widths of the interconnection lines 40 connected to the die 10 of the rotated position 104 are increased in the alignment tolerance, the interconnection lines 40 may electrically connect the pad electrodes 12 of the die 10 of the rotated position 104 to the substrate electrodes 4 . As a result, it is possible to minimize or prevent a defect of the interconnection lines 40 which may be caused by misalignment in the alignment tolerance of the fan-out substrate 2 and the dies 10 .
  • each of the interconnection lines 40 may include a first portion 38 and a second portion 39 .
  • the first portion 38 and the second portion 39 may be connected to each other on the cavity 6 between the fan-out substrate 2 and the die 10 .
  • the first portion 38 may laterally extend from the substrate electrode 4 of the fan-out substrate 2 toward the die 10 .
  • the second portion 39 may laterally extend from the pad electrode 12 of the die 10 toward the fan-out substrate 2 .
  • the first portion 38 and the second portion 39 may have a first longitudinal axis 41 a and a second longitudinal axis 41 b , respectively, when viewed from a plan view.
  • the first longitudinal axis 41 a of the first portion 38 may be parallel to a first direction.
  • the second longitudinal axis 41 b of the second portion 39 may be parallel to a second direction different from the first direction.
  • the first and second longitudinal axes 41 a and 41 b may intersect each other on the die 10 .
  • the first longitudinal axis 41 a and the second longitudinal axis 41 b may intersect each other at a center of the die 10 .
  • An angle ⁇ between the first and second longitudinal axes 41 a and 41 b may be equal to or less than twice the alignment tolerance (e.g., the rotation alignment tolerance).
  • the angle ⁇ between the first and second longitudinal axes 41 a and 41 b may be about 0.2 degrees or less.
  • the first and second optical measurement apparatuses 100 and 100 a may measure the interconnection lines 40 (S 700 ).
  • the first and second control parts 170 and 170 a may obtain a two-dimensional (2D) image and/or a three-dimensional (3D) image of the interconnection lines 40 .
  • the first and second control parts 170 and 170 a may calculate data of thicknesses, widths, and warpage of the interconnection lines 40 from the 2D image and the 3D image.
  • the data of the thicknesses, the widths, and the warpage of the interconnection lines 40 may be applied to subsequent processes (feedback).
  • the first to third control parts 170 , 170 a , and 260 may check whether the operation of forming the interconnection lines 40 is completed (S 800 ). When the operation of forming the interconnection lines 40 is not completed, the operation S 500 to the operation S 800 may be performed again.
  • the data of the thicknesses, the widths, and the warpage of the interconnection lines 40 may be used in the operation S 620 of forming subsequent other interconnection lines.
  • the interconnection lines 40 may be formed on a back surface of the mold substrate 14 .
  • FIG. 29A is a plan view illustrating an embodiment of the operation S 900 of forming the passivation layer 42 in FIG. 1 .
  • FIG. 29B illustrates a cross-sectional view taken along a line I-I′ of FIG. 29A .
  • the passivation layer 42 may be formed on the interconnection lines 40 and the interlayer insulating layer 18 (S 900 ).
  • the passivation layer 42 may be formed by the same method as the interlayer insulating layer 18 .
  • the passivation layer 42 may include a silicon oxide layer or a silicon nitride layer, which is formed by a CVD method.
  • the passivation layer 42 may include silica or polymer, which is formed by a spin-coating method or a sol-gel method.
  • the passivation layer 42 may be patterned to form second contact holes 43 .
  • the second contact holes 43 may be formed by the same method as the first contact holes 16 .
  • the second contact holes 43 may expose portions of the interconnection lines 40 .
  • FIG. 30A is a plan view illustrating an embodiment of the operation S 1000 of forming the interconnection pads 44 in FIG. 1 .
  • FIG. 30B illustrates a cross-sectional view taken along a line I-I′ of FIG. 30A .
  • the interconnection pads 44 may be formed in the second contact holes 43 , respectively (S 1000 ).
  • the interconnection pads 44 may be formed by a process of depositing a metal and a process of polishing the deposited metal.
  • the interconnection pads 44 may be formed to have the substantially same height as the passivation layer 42 .
  • FIG. 31A is a plan view illustrating an embodiment of the operation S 1100 of forming the bumps 50 in FIG. 1 .
  • FIG. 31B illustrates a cross-sectional view taken along a line I-I′ of FIG. 31A .
  • the bumps 50 may be formed on the interconnection pads 44 (S 1100 ).
  • the bumps 50 may be provided onto the interconnection pads 44 by a bonding apparatus (not shown).
  • the number of the bumps 50 formed on one die 10 may range from several to hundreds.
  • the mold substrate 14 and the fan-out substrate 2 may be cut or sawed to separate the dies 10 from each other.
  • the method of fabricating the fan-out panel level package may include detecting the positions of the dies formed in the cavities of the fan-out substrate, and forming the interconnection lines of which at least one connects one die disposed at the position different from the pre-set position to the fan-out substrate.
  • the interconnection lines may connect the die to the fan-out substrate.

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Abstract

A method of fabricating a package includes providing a mold substrate supporting dies in cavities of a fan-out substrate, detecting positions of the dies with respect to the fan-out substrate, and forming interconnection lines. At least one of the interconnection lines includes a first portion extending from the fan-out substrate to a target position on the cavity disposed between the fan-out substrate and one of the dies the one of the dies disposed at a detected position different from the target position, and a second portion extending from the one die to the fan-out substrate.

Description

    CROSS-REFERENCE TO RELATED APPLICATION
  • This application is a divisional application of U.S. application Ser. No. 15/437,566, filed on Feb. 21, 2017, which claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2016-0050998, filed on Apr. 26, 2016, in the Korean Intellectual Property Office, the entire disclosure of each of which is hereby incorporated by reference in its entirety.
    • BACKGROUND
  • Embodiments of the inventive concepts relate to a package and/or a method of fabricating the same and, more particularly, to a fan-out panel level package and/or a method of fabricating the same.
  • As semiconductor chips have been highly integrated, sizes of the semiconductor chips have been reduced. However, distances between solder balls on the semiconductor chips are set by international standards of an international standards association such as joint electron device engineering council (JEDEC). Thus, it may be difficult to adjust the numbers of the solder balls of the semiconductor chips. In addition, as the sizes of the semiconductor chips have been reduced, handling and tests of the semiconductor chips have been difficult. Furthermore, a board on which a semiconductor chip is mounted should be diversified according to a size of the semiconductor chip. To solve this, a fan-out panel level package has been developed.
    • SUMMARY
  • Some embodiments of the inventive concepts may provide a fan-out panel level package capable of reducing, minimizing or preventing an interconnection failure caused by misalignment between a fan-out substrate and a die and/or a method of fabricating the same.
  • In an example embodiment, a method of fabricating a package may include providing a mold substrate supporting dies in cavities of a fan-out substrate, obtaining an image of the fan-out substrate and the dies to detect positions of the dies with respect to the fan-out substrate in the image, and forming interconnection lines. At least one of the interconnection lines may include a first portion extending from the fan-out substrate to a target position on the cavity disposed between the fan-out substrate and one of the dies, the one of the dies disposed at the detected position different from the target position, and a second portion extending from the one of the dies to the fan-out substrate.
  • In an example embodiment, a package may include a mold substrate, a fan-out substrate disposed on the mold substrate and having a cavity, a die disposed on the mold substrate in the cavity, and interconnection lines disposed on the cavity between the fan-out substrate and the die and connecting the die to the fan-out substrate. Each of the interconnection lines may include a first portion extending from the fan-out substrate to the die in a first direction, and a second portion connected to the first portion and extending from the die to the fan-out substrate in a second direction different from the first direction.
  • In an example embodiment, In an example embodiment, A method for forming interconnection lines for a package by detecting if a selected die is disposed within an alignment tolerance of a target position, forming first contact holes by removing portions of an interlayer insulating layer disposed on substrate electrodes of the fan-out substrate and pad electrodes of the selected die disposed at the detected position, if the selected die is disposed within the alignment tolerance, and forming the interconnection lines by a patterning process, the interconnection lines connecting one or some of substrate electrodes to one or some of pad electrodes of the selected die.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The foregoing and other features of inventive concepts will be apparent from the more particular description of non-limiting embodiments of inventive concepts, as illustrated in the following drawings:
  • FIG. 1 is a flow chart illustrating a method of fabricating a package, according to some embodiments of the inventive concepts.
  • FIG. 2 is a flow chart illustrating an embodiment of an operation of providing a mold substrate in FIG. 1.
  • FIGS. 3A to 8A are plan views illustrating an embodiment of the operation of providing the mold substrate in FIG. 1.
  • FIGS. 3B to 8B are cross-sectional views taken along lines I-I′ of FIGS. 3A to 8A, respectively.
  • FIGS. 9A and 9B are schematic views illustrating first and second optical measurement apparatuses detecting positions of dies of FIGS. 8A and 8B.
  • FIG. 10 illustrates an image detected by the optical measurement apparatuses of FIGS. 9A and 9B.
  • FIG. 11A is a plan view illustrating an embodiment of an operation of forming an interlayer insulating layer in FIG. 1.
  • FIG. 11B is a cross-sectional view taken along a line I-I′ of FIG. 11A.
  • FIG. 12 is a flow chart illustrating an embodiment of an operation of forming interconnection lines in FIG. 1.
  • FIG. 13 is a flow chart illustrating an embodiment of an operation of forming first contact holes in FIG. 12.
  • FIGS. 14A to 19A are plan views illustrating an embodiment of the operation of forming the first contact holes in FIG. 12.
  • FIGS. 14B to 19B are cross-sectional views taken along lines I-I′ of FIGS. 14A to 19A, respectively.
  • FIG. 20 is a schematic view illustrating an embodiment of an exposure apparatus performing an exposure process on a first photoresist layer of FIGS. 14A and 14B.
  • FIG. 21 is a flow chart illustrating an embodiment of an operation of forming interconnection lines by a patterning process in FIG. 12.
  • FIGS. 22A to 28A are plan views illustrating an embodiment of the operation of forming the interconnection lines by the patterning process in FIG. 12.
  • FIGS. 22B to 28B are cross-sectional views taken along lines I-I′ of FIGS. 22A to 28A, respectively.
  • FIG. 29A is a plan view illustrating an embodiment of an operation of forming a passivation layer in FIG. 1.
  • FIG. 29B is a cross-sectional view taken along a line I-I′ of FIG. 29A.
  • FIG. 30A is a plan view illustrating an embodiment of an operation of forming interconnection pads in FIG. 1.
  • FIG. 30B is a cross-sectional view taken along a line I-I′ of FIG. 30A.
  • FIG. 31A is a plan view illustrating an embodiment of an operation of forming bumps in FIG. 1.
  • FIG. 31B is a cross-sectional view taken along a line I-I′ of FIG. 31A.
    •  DETAILED DESCRIPTION OF THE EMBODIMENTS
  • FIG. 1 illustrates a method of fabricating a package, according to some embodiments of the inventive concepts.
  • Referring to FIG. 1, the method of fabricating the package may include providing a mold substrate (S100), detecting positions of dies in cavities (S200), checking whether the dies are normally disposed (S300), storing addresses of the dies (S310), storing the detected position of each of the dies (S400), forming an interlayer insulating layer (S500), forming interconnection lines (S600), measuring the interconnection lines (S700), checking whether all of the interconnection lines are formed (S800), forming a passivation layer (S900), forming interconnection pads (S1000), and forming bumps (S1100).
  • FIG. 2 illustrates an embodiment of the operation S100 of providing the mold substrate 14 in FIG. 1. FIGS. 3A to 8A are plan views illustrating an embodiment of the operation S100 of providing the mold substrate 14 in FIG. 1. FIGS. 3B to 8B are cross-sectional views taken along lines I-I′ of FIGS. 3A to 8A, respectively.
  • Referring to FIGS. 2, 3A to 8A, and 3B to 8B, the operation S100 of providing the mold substrate 14 may include providing a fan-out substrate 2 (S110), forming cavities 6 (S120), forming a dummy substrate 8 (S130), providing dies 10 (S140), forming the mold substrate 14 (S150), and removing the dummy substrate 8 (S160).
  • Referring to FIGS. 2, 3A and 3B, firstly, the fan-out substrate 2 in which substrate electrodes 4 are formed may be provided (S110). In some embodiments, the fan-out substrate 2 may be a copper clad laminate (CCL) substrate having the substrate electrodes 4. For example, the substrate electrodes 4 may include through-electrodes disposed in the fan-out substrate 2. The substrate electrodes 4 may be arranged along a quadrilateral ring shape in the fan-out substrate 2 when viewed from a plan view. The substrate electrodes 4 may include copper formed by an electroplating method.
  • Referring to FIGS. 2, 4A, and 4B, cavities 6 may be formed in the fan-out substrate 2 (S120). For example, each of the cavities 6 may have a square shape. The cavities 6 may be formed by a printing method or a punching method. The substrate electrodes 4 may be disposed around each of the cavities 6.
  • Referring to FIGS. 2, 5A, and 5B, the dummy substrate 8 may be formed under the fan-out substrate 2 (S130). In other words, the dummy substrate 8 may be formed on a bottom surface of the fan-out substrate 2 (S130). For example, the dummy substrate 8 may include an adhesive tape film. The dummy substrate 8 may adhere to the bottom surface of the fan-out substrate 2. The dummy substrate 8 may block the cavities 6. In other words, the dummy substrate 8 may close bottom ends of the cavities 6.
  • Referring to FIGS. 2, 6A, and 6B, the dies 10 may be provided on the dummy substrate 8 in the cavities 6, respectively (S140). The dies 10 may be provided into the cavities 6 by a picker (not shown). In some embodiments, each of the dies 10 may be a memory chip, or a semiconductor chip corresponding to an application processor (AP) chip. In some embodiments, each of the dies 10 may include a plurality of pad electrodes 12. The pad electrodes 12 may adhere to the dummy substrate 8. Each of the dies 10 may have a square shape smaller than the cavities 6.
  • Referring to FIGS. 2, 7A, and 7B, the mold substrate 14 may be formed on the fan-out substrate 2, the dummy substrate 8, and the dies 10 (S150). For example, the mold substrate 14 may include resin or polymer. The mold substrate 14 may be melted at a high temperature. The melted mold substrate 14 may be provided onto the fan-out substrate 2, the dummy substrate 8, and the dies 10. Thereafter, the mold substrate 14 may be cooled to a room temperature so as to be hardened.
  • Referring to FIGS. 2, 8A, and 8B, the dummy substrate 8 may be removed (S160). The dummy substrate 8 may be peeled from the mold substrate 14, the fan-out substrate 2, and the dies 10 by external force. Thus, the pad electrodes 12 of the dies 10 may be exposed outward. The mold substrate 14, the fan-out substrate 2, and the dies 10 may be flipped or turned over such that the mold substrate 14 is disposed under the fan-out substrate 2 and the dies 10. For example, left and right portions of the mold substrate 14 may be rotated on a center line of the mold substrate 14, and thus the mold substrate 14 may be flipped or turned over.
  • FIGS. 9A and 9B illustrate first and second optical measurement apparatuses 100 and 100 a detecting positions of the dies 10 of FIGS. 8A and 8B. FIG. 10 illustrates a first image 101 detected by the first and second optical measurement apparatuses 100 and 100 a of FIGS. 9A and 9B.
  • Referring to FIGS. 1, 9A, 9B, and 10, the first and second optical measurement apparatuses 100 and 100 a may detect a position of each of the dies 10 on the mold substrate 14 in the operation S200. In some embodiments, the first and second optical measurement apparatuses 100 and 100 a may obtain the first image 101 of the fan-out substrate 2 and the dies 10 on the mold substrate 14. The first and second optical measurement apparatuses 100 and 100 a may calculate the position of each of the dies 10 with respect to the fan-out substrate 2 in the first image 101.
  • Referring to FIG. 9A, the first optical measurement apparatus 100 may be a coaxial optical system. In some embodiments, the first optical measurement apparatus 100 may include a first stage 110, a first driving control part 120, a first displacement sensor 130, a first light source part 140, a first projection part 150, a first detecting part 160, and a first control part 170. The first stage 110 may receive the mold substrate 14 and may horizontally move the mold substrate 14. The first driving control part 120 may control the movement of the first stage 110 and the mold substrate 14. The first displacement sensor 130 may sense a displacement of the mold substrate 14. The first driving control part 120 may receive a sensing signal of the first displacement sensor 130 to control the displacement of the mold substrate 14. The first light source part 140 may provide first incident light 141 to the first projection part 150. The first projection part 150 may provide the first incident light 141 to the mold substrate 14. In addition, the first projection part 150 may provide first reflected light 161, reflected from the mold substrate 14, to the first detecting part 160. The first detecting part 160 may detect an optical signal. For example, the first detecting part 160 may include an image sensor. The first control part 170 may obtain the first image 101 from the optical signal of the first detecting part 160. The first control part 170 may detect or calculate the positions of the dies 10 with respect to the fan-out substrate 2 in the first image 101.
  • Referring to FIG. 9B, the second optical measurement apparatus 100 a may be an oblique optical system. In some embodiments, the second optical measurement apparatus 100 a may include a second stage 110 a, a second driving control part 120 a, a second displacement sensor 130 a, a second light source part 140 a, a second projection part 150 a, a second detecting part 160 a, and a second control part 170 a. The second stage 110 a, the second driving control part 120 a, the second displacement sensor 130 a, the second light source part 140 a, the second detecting part 160 a, and the second control part 170 a may be configured to be the same as the first stage 110, the first driving control part 120, the first displacement sensor 130, the first light source part 140, the first detecting part 160, and the first control part 170 of FIG. 9A, respectively. In some embodiments, the second projection part 150 a may include an incident-light projection part 152 and a reflected-light projection part 154. The incident-light projection part 152 and the reflected-light projection part 154 may be connected to the second light source part 140 a and the second detecting part 160 a, respectively. The incident-light projection part 152 and the reflected-light projection part 154 may be disposed to be inclined with respect to the mold substrate 14. The incident-light projection part 152 and the reflected-light projection part 154 may be symmetrically disposed on the mold substrate 14. The incident-light projection part 152 may provide second incident light 141 a to the mold substrate 14 in a first direction inclined with respect to a top surface of the mold substrate 14. The reflected-light projection part 154 may receive second reflected light 161 a in a second direction inclined with respect to the top surface of the mold substrate 14. Here, the first direction and the second direction may be symmetrical.
  • Referring to FIGS. 9A, 9B, and 10, the first and second control parts 170 and 170 a may detect or calculate a position of each of the dies 10 with respect to the fan-out substrate 2 in the first image 101. The first and second control parts 170 and 170 a may read a pre-set position 102 of each of the dies 10 from a database (not shown). The detected position of at least one of the dies 10 may be different from the pre-set position 102 thereof. For example, one of the dies 10 may be displayed at a position 104, rotated with respect to the pre-set position 102, in the first image 101. In other words, the rotated position 104 may correspond to the detected position of one of the dies 10. In some embodiments, even though not shown in the drawings, the detected positions may include a position that is shifted in a transverse or longitudinal direction in the cavity 6 when viewed from a plan view.
  • The first and second control parts 170 and 170 a may check whether the dies 10 are normally disposed in such a way that the detected positions of the dies 10 are in alignment tolerances of the pre-set positions 102 (S300). For example, the alignment tolerance of the pre-set position 102 may be about ±5 μm in the transverse direction or the longitudinal direction of the cavity 6. A rotation alignment tolerance of the pre-set position 102 may be ±0.1 degree. When a rotation angle between the pre-set position 102 and the rotated position 104 is beyond the rotation alignment tolerance (of, e.g., ±0.1 degree), the first and second control part 170 and 170 a may check that the die 10 is not normally disposed. When the rotation angle between the pre-set position 102 and the rotated position 104 is in the rotation alignment tolerance (of, e.g., ±0.1 degree), the first and second control part 170 and 170 a may check that the die 10 is normally disposed.
  • Referring to FIGS. 1, 9A, 9B, and 10, when the detected positions of one or more of the dies 10 are abnormal, the first and second control parts 170 and 170 a may store addresses of the dies 10 abnormally disposed beyond the (rotation) alignment tolerance into the database (not shown) (S310). Thereafter, the operation S600 of forming the interconnection lines may not be performed on the abnormal dies 10.
  • When the positions of the dies 10 are normal, the first and second control parts 170 and 170 a may store data of the detected positions of the dies 10 into the database (S400). The stored position data may be used in the operation S600 of forming the interconnection lines.
  • FIG. 11A is a plan view illustrating an embodiment of the operation S500 of forming the interlayer insulating layer 18 in FIG. 1. FIG. 11B is a cross-sectional view taken along a line I-I′ of FIG. 11A.
  • Referring to FIGS. 1, 11A, and 11B, an interlayer insulating layer 18 may be formed on the fan-out substrate 2, the dies 10, and the mold substrate 14 (S500). For example, the interlayer insulating layer 18 may include a silicon oxide layer or a silicon nitride layer, which is formed by a chemical vapor deposition (CVD) method. Alternatively, the interlayer insulating layer 18 may include silica or transparent polymer, which is formed by a spin-coating method or a sol-gel method.
  • FIG. 12 illustrates an embodiment of the operation S600 of forming the interconnection lines in FIG. 1.
  • Referring to FIG. 12, the operation S600 of forming the interconnection lines may include forming first contact holes (S610) and forming the interconnection lines by a patterning process (S620). The operation S610 of forming the first contact holes may be an operation of removing portions of the interlayer insulating layer 18 to expose the pad electrodes 12 of the dies 10 and the substrate electrodes 4 of the fan-out substrate 2. The operation S620 of forming the interconnection lines by the patterning process may be an operation of electrically connecting the exposed pad electrodes 12 to the exposed substrate electrodes 4.
  • FIG. 13 illustrates an embodiment of the operation S610 of forming the first contact holes 16 in FIG. 12. FIGS. 14A to 19A are plan views illustrating an embodiment of the operation S610 of forming the first contact holes in FIG. 12. FIGS. 14B to 19B are cross-sectional views taken along lines I-I′ of FIGS. 14A to 19A, respectively.
  • Referring to FIGS. 13, 14A to 19A, and 14B to 19B, the operation S610 of forming the first contact holes 16 may include performing a plurality of exposure processes on a first photoresist layer 20 formed on the fan-out substrate 2 and the dies 10. In some embodiments, the operation S610 of forming the first contact holes 16 may include forming the first photoresist layer 20 (S611), providing first ultraviolet light 241 (S612), providing second ultraviolet light 251 (S613), developing the first photoresist layer 20 (S614), etching portions of the interlayer insulating layer 18 (S615), and removing the first photoresist layer 20 (S616).
  • Referring to FIGS. 13, 14A, and 14B, the first photoresist layer 20 may be formed on the interlayer insulating layer 18 (S611). The first photoresist layer 20 may be formed on the interlayer insulating layer 18 by a spin-coating method. Thereafter, the first photoresist layer 20 may be hardened by a bake process. For example, the first photoresist layer 20 may include a positive photoresist.
  • FIG. 20 illustrates an embodiment of an exposure apparatus 200 for exposing the first photoresist layer 20 of FIGS. 14A and 14B.
  • Referring to FIG. 20, the exposure apparatus 200 may be a double exposure apparatus. In some embodiments, the exposure apparatus 200 may include a third stage 210, a third driving control part 220, a third displacement sensor 230, a first exposure part 240, a second exposure part 250, and a third control part 260. The third driving control part 220 may control the third stage 210. The third displacement sensor 230 may detect a position of the mold substrate 14. The first and second exposure parts 240 and 250 may be disposed above the third stage 210. The first and second exposure parts 240 and 250 may be adjacent to each other. For example, the first exposure part 240 may include a first exposure light source 242, a first reticle 244, and a first exposure objection lens 246. The first exposure light source 242 may generate the first ultraviolet light 241. The first reticle 244 may be disposed between the first exposure light source 242 and the first exposure objection lens 246. The first reticle 244 may transmit a portion of the first ultraviolet light 241. The first exposure objection lens 246 may provide or project the first ultraviolet light 241 onto the first photoresist layer 20. A pattern image of the first reticle 244 may be transferred to the first photoresist layer 20 by the first ultraviolet light 241. The second exposure part 250 may include a second exposure light source 252, a second reticle 254, and a second exposure objection lens 256. The second exposure light source 252 may generate the second ultraviolet light 251. The second reticle 254 may be disposed between the second exposure light source 252 and the second exposure objection lens 256. The second reticle 254 may transmit a portion of the second ultraviolet light 251. The second exposure objection lens 256 may provide or project the second ultraviolet light 251 onto the first photoresist layer 20. A pattern image of the second reticle 254 may be transferred to the first photoresist layer 20 by the second ultraviolet light 251.
  • Referring to FIGS. 13, 15A, 15B, and 20, the first exposure part 240 may provide the first ultraviolet light 241 to a portion of the first photoresist layer 20 disposed on the fan-out substrate 2 (S612). In some embodiments, the pattern image of the first reticle 244 may be defined as a first shot 22. The first ultraviolet light 241 may be provided to the portion, disposed around the dies 10, of the first photoresist layer 20 through the first shot 22. For example, the first ultraviolet light 241 may be provided to the first photoresist layer 20 disposed on the substrate electrodes 4.
  • Referring to FIGS. 10, 13, 16A, 16B, and 20, the second exposure part 250 may provide the second ultraviolet light 251 to other portions of the first photoresist layer 20 disposed on the dies 10 (S613). In some embodiments, the pattern image of the second reticle 254 may be defined as a second shot 24. The second ultraviolet light 251 may be provided to the portions, disposed on the cavities 6, of the first photoresist layer 20 through the second shot 24. The second shot 24 may overlap with the first shot 22 on the cavities 6 disposed between the fan-out substrate 2 and the dies 10. The third control part 260 may read the detected position data of the dies 10 from the database. The second exposure part 250 may provide the second ultraviolet light 251 to the portions, disposed on the dies 10, of the first photoresist layer 20 on the basis of the detected position data. For example, the third control part 260 may move the second exposure part 250 to the position 104 rotated from the pre-set position 102. In some embodiments, the second exposure part 250 may provide the second ultraviolet light 251 to the first photoresist layer 20 disposed on the pad electrodes 12 of the rotated position 104.
  • Referring to FIGS. 13, 17A, and 17B, the first photoresist layer 20 may be developed to expose portions of the interlayer insulating layer 18 (S614). The portions of the interlayer insulating layer 18, which are disposed on the substrate electrodes 4 and the pad electrodes 12, may be exposed by the first photoresist layer 20 developed. In other words, the first photoresist layer 20 may be formed to expose the interlayer insulating layer 18 disposed on the pad electrodes 12 of the rotated die 10.
  • Referring to FIGS. 13, 18A, and 18B, the exposed portions of the interlayer insulating layer 18 may be etched to form the first contact holes 16 (S615). The first contact holes 16 may expose the substrate electrodes 4 and the pad electrodes 12.
  • Referring to FIGS. 10, 13, 19A, and 19B, the first photoresist layer 20 may be removed (S616). The first photoresist layer 20 may be removed by an organic solvent such as alcohol or acetone. Thus, the first contact holes 16 may be formed on the substrate electrodes 4 and the pad electrodes 12 of the rotated position 104. As a result, it is possible to minimize or prevent a defect of the first contact holes 16 which may be caused by misalignment in the alignment tolerance of the fan-out substrate 2 and the dies 10.
  • FIG. 21 illustrates an embodiment of the operation S620 of forming the interconnection lines 40 by the patterning process in FIG. 12. FIGS. 22A to 28A are plan views illustrating an embodiment of the operation S620 of forming the interconnection lines 40 by the patterning process in FIG. 12. FIGS. 22B to 28B are cross-sectional views taken along lines I-I′ of FIGS. 22A to 28A, respectively.
  • Referring to FIGS. 20, 21, 22A to 28A, and 22B to 28B, the operation S620 of forming the interconnection lines 40 by the patterning process may include performing a plurality of exposure processes on a second photoresist layer 32 formed on the fan-out substrate 2 and the dies 10. At this time, the plurality of exposure processes may use a partial overlapping exposure method. In some embodiments, the operation S620 of forming the interconnection lines by the patterning process may include forming a metal layer 30 (S621), forming the second photoresist layer 32 (S622), providing first ultraviolet light 241 (S623), providing second ultraviolet light 251 (S624), developing the second photoresist layer 32 (S625), etching a portion of the metal layer 30 (S626), and removing the second photoresist layer 32 (S627).
  • Referring to FIGS. 21, 22A, and 22B, the metal layer 30 may be formed on the interlayer insulating layer 18, the substrate electrodes 4, and the pad electrodes 12 (S621). For example, the metal layer 30 may include aluminum or tungsten formed by a physical vapor deposition (PVD) method.
  • Referring to FIGS. 21, 23A, and 23B, the second photoresist layer 32 may be formed on the metal layer 30 (S622). The second photoresist layer 32 may be formed on the metal layer 30 by a spin-coating method. For example, the second photoresist layer 32 may include a negative photoresist.
  • Referring to FIGS. 20, 21, 24A, and 24B, the first exposure part 240 may provide the first ultraviolet light 241 to a portion of the second photoresist layer 32 which is disposed on the fan-out substrate 2 and the cavities 6 disposed between the fan-out substrate 2 and the dies 10 (S623). In some embodiments, a pattern image of a first reticle 244 for forming the interconnection lines may be defined as a third shot 34. The first ultraviolet light 241 may be provided to the portion, disposed around the dies 10, of the second photoresist layer 32 through the third shot 34. The third shot 34 (e.g., the first ultraviolet light 241) may be provided to portions of the second photoresist layer 32 disposed between the substrate electrodes 4 and the pad electrodes 12 in a plan view and portions of the second photoresist layer 32 disposed on the substrate electrodes 4. In other words, the portions of the second photoresist layer 32, which are exposed to the first ultraviolet light 241, may be disposed on the substrate electrodes 4 and between the substrate electrodes 4 and the dies 10.
  • Referring to FIGS. 10, 24A, and 24B, the second photoresist layer 32 may include first interconnection exposure portions 32 a. The first interconnection exposure portions 32 a may laterally extend from on the substrate electrodes 4 of the fan-out substrate 2 to the dies 10 of the pre-set positions 102.
  • Alternatively, when the second photoresist layer 32 is a positive photoresist, the first ultraviolet light 241 may be provided to the second photoresist layer 32 disposed around the substrate electrodes 4 except portions of the second photoresist layer 32 disposed between the substrate electrodes 4 and the pad electrodes 12.
  • Referring to FIGS. 20, 21, 25A, and 25B, the second exposure part 250 may provide the second ultraviolet light 251 to portions of the second photoresist layer 32 which are disposed on the dies 10 and the cavities 6 between the fan-out substrate 2 and the dies 10 (S624). In some embodiments, a pattern image of a second reticle 254 for forming the interconnection lines may be defined as a fourth shot 36. The second ultraviolet light 251 may be provided to the portions, disposed on the cavities 6, of the second photoresist layer 32 through the fourth shot 36. The fourth shot 36 may overlap with the third shot 34 on the second photoresist layer 32 disposed on the cavities 6 between the fan-out substrate 2 and the dies 10. The third control part 260 may read the detected position data of the dies 10 from the database. The second exposure part 250 may expose the portions, disposed on the cavities 6 and the dies 10, of the first photoresist layer 32 on the basis of the detected position data. For example, the third control part 260 may move the second exposure part 250 to the position 104 rotated from the pre-set position 102. The second exposure part 250 may provide the second ultraviolet light 251 to portions of the second photoresist layer 32 disposed between the substrate electrodes 4 and the pad electrodes 12 in a plan view and portions of the second photoresist layer 32 disposed on the pad electrodes 12. In other words, the portions of the second photoresist layer 32, which are exposed to the second ultraviolet light 251, may be disposed on the pad electrodes 12 and between the fan-out substrate 2 and the pad electrodes 12.
  • Referring to FIGS. 10, 25A, and 25B, the second photoresist layer 32 may include second interconnection exposure portions 32 b. The second interconnection exposure portions 32 b may laterally extend from on the pad electrodes 12 of the dies 10 of the detected positions to the fan-out substrate 2. The first interconnection exposure portions 32 a may overlap with the second interconnection exposure portions 32 b between the fan-out substrate 2 and the dies 10 when viewed from a plan view. For example, widths of the overlapping portions of the first and second interconnection exposure portions 32 a and 32 b may be increased between the die 10 disposed at the rotated position 104 and the fan-out substrate 2.
  • Alternatively, when the second photoresist layer 32 is the positive photoresist, the second exposure part 250 may provide the second ultraviolet light 251 to the second photoresist layer 32 disposed on the dies 10 and the cavities 6 between the fan-out substrate 2 and the dies 10 (including the rotated die 10) except portions of the second photoresist layer 32 disposed between the pad electrodes 12 and the substrate electrodes 4 in a plan view and except portions of the second photoresist layer 32 disposed on the pad electrodes 12.
  • Referring to FIGS. 21, 26A, and 26B, the second photoresist layer 32 may be developed to expose portions of the metal layer 30 (S625). The first interconnection exposure portions 32 a and the second interconnection exposure portions 32 b may remain on the metal layer 30 after the developing process. Portions of the first interconnection exposure portions 32 a may cover the substrate electrodes 4, and portions of the second interconnection exposure portions 32 b may cover the pad electrodes 12.
  • Referring to FIGS. 21, 27A, and 27B, the metal layer 30 exposed the first and second interconnection exposure portions 32 a and 32 b may be removed to form the interconnection lines 40 (S626). The metal layer 30 may be etched by a dry etching method.
  • Referring to FIGS. 21, 28A, and 28B, the first and second interconnection exposure portions 32 a and 32 b of the second photoresist layer 32 may be removed (S627). Thus, the interconnection lines 40 may be exposed outward. The interconnection lines 40 may be disposed on portions of the interlayer insulating layer 18, the substrate electrodes 4, and the pad electrodes 12. The interconnection lines 40 may electrically connect the substrate electrodes 4 to the pad electrodes 12.
  • Referring to FIGS. 10, 28A, and 28B, widths of the interconnection lines 40 connected to the die 10 disposed at the rotated position 104 may be greater than widths of the interconnection lines 40 connected to the dies 10 disposed at the pre-set positions 102. For example, the widths of the interconnection lines 40 may be increased on the cavity 6 between the fan-out substrate 2 and the die 10 disposed at the rotated position 104. Some of the interconnection lines 40 may extend from the substrate electrodes 4 of the fan-out substrate 2 onto the dies 10 of the pre-set positions 102. Others of the interconnection lines 40 may extend from the pad electrodes 12 of the die 10 of the rotated position 104 onto the fan-out substrate 2. As described above, the first and second interconnection exposure portions 32 a and 32 b of FIG. 27A, which are disposed on the cavity 6 between the fan-out substrate 2 and the die 10 of the rotated position 104, may not be completely aligned with each other but may partially overlap with each other. Thus, the interconnection lines 40 on disposed on the cavity 6 between the fan-out substrate 2 and the die 10 of the rotated position 104 may have increased widths and may not be broken. Since the widths of the interconnection lines 40 connected to the die 10 of the rotated position 104 are increased in the alignment tolerance, the interconnection lines 40 may electrically connect the pad electrodes 12 of the die 10 of the rotated position 104 to the substrate electrodes 4. As a result, it is possible to minimize or prevent a defect of the interconnection lines 40 which may be caused by misalignment in the alignment tolerance of the fan-out substrate 2 and the dies 10.
  • Referring to FIGS. 28A and 28B, each of the interconnection lines 40 may include a first portion 38 and a second portion 39. The first portion 38 and the second portion 39 may be connected to each other on the cavity 6 between the fan-out substrate 2 and the die 10. The first portion 38 may laterally extend from the substrate electrode 4 of the fan-out substrate 2 toward the die 10. The second portion 39 may laterally extend from the pad electrode 12 of the die 10 toward the fan-out substrate 2. In some embodiments, the first portion 38 and the second portion 39 may have a first longitudinal axis 41 a and a second longitudinal axis 41 b, respectively, when viewed from a plan view. The first longitudinal axis 41 a of the first portion 38 may be parallel to a first direction. The second longitudinal axis 41 b of the second portion 39 may be parallel to a second direction different from the first direction. The first and second longitudinal axes 41 a and 41 b may intersect each other on the die 10. For example, the first longitudinal axis 41 a and the second longitudinal axis 41 b may intersect each other at a center of the die 10. An angle θ between the first and second longitudinal axes 41 a and 41 b may be equal to or less than twice the alignment tolerance (e.g., the rotation alignment tolerance). For example, the angle θ between the first and second longitudinal axes 41 a and 41 b may be about 0.2 degrees or less.
  • Referring again to FIGS. 1, 9A, and 9B, the first and second optical measurement apparatuses 100 and 100 a may measure the interconnection lines 40 (S700). The first and second control parts 170 and 170 a may obtain a two-dimensional (2D) image and/or a three-dimensional (3D) image of the interconnection lines 40. The first and second control parts 170 and 170 a may calculate data of thicknesses, widths, and warpage of the interconnection lines 40 from the 2D image and the 3D image. The data of the thicknesses, the widths, and the warpage of the interconnection lines 40 may be applied to subsequent processes (feedback).
  • Referring to FIG. 1, the first to third control parts 170, 170 a, and 260 may check whether the operation of forming the interconnection lines 40 is completed (S800). When the operation of forming the interconnection lines 40 is not completed, the operation S500 to the operation S800 may be performed again. The data of the thicknesses, the widths, and the warpage of the interconnection lines 40 may be used in the operation S620 of forming subsequent other interconnection lines. In some embodiments, even though not shown in the drawings, the interconnection lines 40 may be formed on a back surface of the mold substrate 14.
  • FIG. 29A is a plan view illustrating an embodiment of the operation S900 of forming the passivation layer 42 in FIG. 1. FIG. 29B illustrates a cross-sectional view taken along a line I-I′ of FIG. 29A.
  • Referring to FIGS. 1, 29A, and 29B, when the operation of forming the interconnection lines is completed, the passivation layer 42 may be formed on the interconnection lines 40 and the interlayer insulating layer 18 (S900). The passivation layer 42 may be formed by the same method as the interlayer insulating layer 18. For example, the passivation layer 42 may include a silicon oxide layer or a silicon nitride layer, which is formed by a CVD method. Alternatively, the passivation layer 42 may include silica or polymer, which is formed by a spin-coating method or a sol-gel method. Thereafter, the passivation layer 42 may be patterned to form second contact holes 43. The second contact holes 43 may be formed by the same method as the first contact holes 16. The second contact holes 43 may expose portions of the interconnection lines 40.
  • FIG. 30A is a plan view illustrating an embodiment of the operation S1000 of forming the interconnection pads 44 in FIG. 1. FIG. 30B illustrates a cross-sectional view taken along a line I-I′ of FIG. 30A.
  • Referring to FIGS. 1, 30A, and 30B, the interconnection pads 44 may be formed in the second contact holes 43, respectively (S1000). The interconnection pads 44 may be formed by a process of depositing a metal and a process of polishing the deposited metal. The interconnection pads 44 may be formed to have the substantially same height as the passivation layer 42.
  • FIG. 31A is a plan view illustrating an embodiment of the operation S1100 of forming the bumps 50 in FIG. 1. FIG. 31B illustrates a cross-sectional view taken along a line I-I′ of FIG. 31A.
  • Referring to FIGS. 1, 31A, and 31B, the bumps 50 may be formed on the interconnection pads 44 (S1100). The bumps 50 may be provided onto the interconnection pads 44 by a bonding apparatus (not shown). For example, the number of the bumps 50 formed on one die 10 may range from several to hundreds.
  • Thereafter, the mold substrate 14 and the fan-out substrate 2 may be cut or sawed to separate the dies 10 from each other.
  • As described above, according to some embodiments of the inventive concepts, the method of fabricating the fan-out panel level package may include detecting the positions of the dies formed in the cavities of the fan-out substrate, and forming the interconnection lines of which at least one connects one die disposed at the position different from the pre-set position to the fan-out substrate. When a difference between the pre-set position and the detected position is the alignment tolerance, the interconnection lines may connect the die to the fan-out substrate. Thus, it is possible to minimize or prevent a defect of the interconnection lines which may be caused by misalignment of the fan-out substrate and the dies.
  • While the inventive concepts have been described with reference to example embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirits and scopes of the inventive concepts. Therefore, it should be understood that the above embodiments are not limiting, but illustrative. Thus, the scopes of the inventive concepts are to be determined by the broadest permissible interpretation of the following claims and their equivalents, and shall not be restricted or limited by the foregoing description.

Claims (5)

What is claimed is:
1. A package comprising:
a mold substrate;
a fan-out substrate disposed on the mold substrate, the fan-out substrate having a cavity;
a die disposed on the mold substrate in the cavity; and
interconnection lines disposed on the cavity between the fan-out substrate and the die, the interconnection lines connecting the die to the fan-out substrate, each of the interconnection lines includes,
a first portion extending from the fan-out substrate to the die in a first direction, and
a second portion connected to the first portion, the second portion extending from the die to the fan-out substrate in a second direction different from the first direction.
2. The package of claim 1, wherein the first portion and the second portion each have a first longitudinal axis and a second longitudinal axis intersecting each other on the die.
3. The package of claim 1, wherein the fan-out substrate includes substrate electrodes connected to the first portions.
4. The package of claim 1, wherein the die includes pad electrodes connected to the second portions.
5. The package of claim 1, further comprising:
an interlayer insulating layer disposed between the mold substrate and the interconnection lines, the interlayer insulating layer having contacts connecting the first and second portions of the interconnection lines to the fan-out substrate and the die, respectively.
US15/832,938 2016-04-26 2017-12-06 Fan-out panel level package and method of fabricating the same Abandoned US20180096903A1 (en)

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