US20170347185A1 - Microphone and manufacturing method thereof - Google Patents
Microphone and manufacturing method thereof Download PDFInfo
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- US20170347185A1 US20170347185A1 US15/263,594 US201615263594A US2017347185A1 US 20170347185 A1 US20170347185 A1 US 20170347185A1 US 201615263594 A US201615263594 A US 201615263594A US 2017347185 A1 US2017347185 A1 US 2017347185A1
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- acoustic
- vibrating diaphragm
- forming
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- hole
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- 238000000034 method Methods 0.000 claims description 14
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- 229920005591 polysilicon Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
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- 239000004593 Epoxy Substances 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
- H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only
- H04R1/28—Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
- H04R1/2807—Enclosures comprising vibrating or resonating arrangements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/006—Interconnection of transducer parts
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Definitions
- the present disclosure relates to a microphone and, more particularly, to a microphone with durability enhanced through an acoustic dispersion filter provided between an acoustic element and a case, and a manufacturing method thereof.
- microphones are devices converting a voice into an electrical signal.
- Microphones are required to have desirable electronic and acoustic performance, reliability, and operability. Microphones have increasingly been reduced in size.
- MEMS micro-electro mechanical system
- MEMS microphones are manufactured using a semiconductor batch process. MEMS microphones have tolerance to moisture and heat, and can be miniaturized and integrated with a signal processing circuit, compared with conventional electric condenser microphones (ECMs).
- ECMs electric condenser microphones
- MEMS microphones have excellent sensitivity and low performance deviation by products, compared with conventional ECMs.
- MEMS microphones have been applied to various application fields, replacing ECMs.
- MEMS microphones may be classified as piezoelectric MEMS microphones and capacitive MEMS microphones.
- a piezoelectric MEMS microphone includes a vibrating diaphragm, and when the vibrating diaphragm is deformed by external sound, an electrical signal is generated according to a piezoelectric effect to thus measure sound pressure.
- a capacitive MEMS microphone includes a fixed electrode and a vibrating diaphragm, and when external sound is applied to the vibrating diaphragm, a space between the fixed electrode and the vibrating diaphragm is changed, thus altering a value of a capacitance. Sound pressure is measured according to the generated electrical signal.
- MEMS microphones have a chamber formed by etching on a silicon substrate on one side thereof to allow a sound to pass therethrough, and as the size of an acoustic element is decreased, an area of a vibrating diaphragm is increased against the overall size.
- an external impact is applied to a wafer substrate, distortion thereof, or the like, affects residual stress of the vibrating diaphragm itself, and here, stress of the vibrating diaphragm is changed by the external impact to degrade sensitivity of the microphone.
- the vibrating diaphragm itself sensing a sound is so thin that it is damaged by a physical external impact in many cases, compared with other condenser-type microphones such as an ECB, or the like.
- the present disclosure has been made in an effort to provide a microphone including an acoustic dispersion filter protecting a vibrating diaphragm of an acoustic element from an external impact, and a manufacturing method thereof.
- the present disclosure has also been made in an effort to provide a microphone including an acoustic dispersion filter provided between an acoustic element and a case.
- An exemplary embodiment in the present disclosure provides a microphone including: an acoustic element including an acoustic hole; a case disposed below the acoustic element and including an acoustic inlet formed in a position corresponding to the acoustic hole; and a plurality of through holes formed between the acoustic element and the case and formed in a position corresponding to the acoustic hole.
- the acoustic element may include: a substrate including the acoustic hole; a vibrating diaphragm formed on the substrate and vibrated by an acoustic signal input through the acoustic inlet; and a fixed electrode formed on the vibrating diaphragm and spaced apart from the vibrating diaphragm by an interval.
- the substrate of the acoustic element may be formed of silicon, and the acoustic dispersion filter may be formed of ion-implanted silicon.
- Another exemplary embodiment in the present disclosure provides a method for manufacturing a microphone including steps of: forming an acoustic element including an acoustic dispersion filter formed on one side of the acoustic element; forming a case including an acoustic inlet; and bringing the acoustic element and the case into contact with each other.
- the acoustic dispersion filter includes a plurality of through holes, the acoustic element includes an acoustic hole, and the acoustic hole, the plurality of through holes, and the acoustic inlet are formed in positions corresponding to each other.
- the acoustic dispersion filter is formed between the acoustic element and the case, an acoustic signal having high pressure, or air pressure, may be dispersed and not concentrated on the center of the vibrating diaphragm, thus protecting the vibrating diaphragm. Also, a change in performance due to a change in stress that occurs when the acoustic element is attached to the case may be prevented through the acoustic dispersion filter, and a distortion phenomenon due to an external impact, or the like, may be prevented.
- FIG. 1 is a view schematically illustrating a microphone according to an exemplary embodiment in the present disclosure.
- FIG. 2 is a view schematically illustrating a microphone according to another exemplary embodiment in the present disclosure.
- FIG. 3 is a view illustrating an acoustic element according to an exemplary embodiment in the present disclosure.
- FIGS. 4 to 16 are views sequentially illustrating a method for manufacturing a microphone according to an exemplary embodiment in the present disclosure.
- FIG. 1 is a view schematically illustrating a microphone according to an exemplary embodiment in the present disclosure
- FIG. 2 is a view schematically illustrating a microphone according to another exemplary embodiment.
- a microphone 50 includes an acoustic element 100 , an acoustic dispersion filter 150 , and a case 200 .
- the acoustic element 100 processes an acoustic signal introduced from the outside and transmits the processed acoustic signal to a processing module (not shown). That is, the acoustic element 100 may receive an acoustic signal through an acoustic hole 141 formed in a substrate 110 from the outside, may be vibrated by sound pressure according to the received acoustic signal to generate an electrical signal, and may transmit the generated electrical signal to the processing module.
- the acoustic element 100 may be configured using a micro-electro mechanical system (MEMS) technology.
- MEMS micro-electro mechanical system
- the acoustic element 100 will be described in more detail below with reference to FIG. 3 .
- the acoustic dispersion filter 150 is positioned between the acoustic element 100 and the case 200 . That is, the acoustic dispersion filter 150 is disposed below the acoustic element 100 and above the case 200 .
- the acoustic dispersion filter 150 includes a plurality of through holes 160 .
- the plurality of through holes 160 may be provided in positions corresponding to an acoustic hole 141 provided in the substrate 110 , and may be provided in positions corresponding to an acoustic inlet 210 of the acoustic dispersion filter 150 .
- the plurality of through holes 160 may disperse an acoustic signal having high pressure or air pressure introduced to the acoustic element so as not to concentrate on the vibrating diaphragm 115 or the fixed electrode 125 of the acoustic element 100 .
- the microphone 50 according to an exemplary embodiment in the present disclosure may be prevented from being damaged by air pressure or an acoustic signal having high pressure introduced from the outside through the acoustic dispersion filter 150 .
- the acoustic dispersion filter 150 is ion-implanted to be formed on one side of the substrate 110 formed of silicon. Hardness of the acoustic dispersion filter 150 may be greater than that of the acoustic element 100 .
- a change in performance that may be made according to a change in stress due to an adhesive may be prevented.
- the case 200 is positioned below the acoustic element 100 and includes an acoustic inlet 210 .
- the acoustic inlet 210 is a passage through which an acoustic signal generated from the outside is introduced.
- the acoustic inlet 210 may be formed in a position corresponding to the acoustic hole 141 of the acoustic element 100 .
- a width W 2 of the acoustic inlet 210 may be equal to a width W 1 of the acoustic hole 141 .
- the acoustic inlet 210 may include a first inlet 213 and a second inlet 215 .
- a width W 3 of the first inlet 213 may be different from a width W 4 of the second inlet 215 .
- the width W 3 of the first inlet 213 may be greater than the width W 4 of the second inlet 215 .
- the width W 3 of the first inlet 213 may be greater than or equal to the width W 1 of the acoustic hole 141
- the width W 4 of the second inlet 215 may be narrower than the width W 1 of the acoustic hole 141 .
- an acoustic signal introduced from the outside may be input to the acoustic element 100 in a dispersed manner.
- the case 200 may be formed of any one material among a metal, a flame retardant 4 (FR4), and ceramic.
- a cross-section of the case 200 may have a polygonal shape, such as a quadrangular shape, or it may have a circular or oval shape.
- FIG. 3 is a view illustrating an acoustic element according to an exemplary embodiment in the present disclosure.
- the acoustic element 100 includes the substrate 110 , a vibrating diaphragm 115 , a support layer 117 , a fixed electrode 125 , and an insulating layer 131 .
- the substrate 110 may be formed of silicon, and includes an acoustic hole 141 .
- the vibrating diaphragm 115 is formed on the substrate 110 and covers the acoustic hole 141 formed on the substrate 110 . A portion of the vibrating diaphragm 115 is exposed by the acoustic hole 141 , and a portion of the vibrating diaphragm 115 exposed by the acoustic hole 141 vibrates according to an acoustic signal introduced from the outside.
- the vibrating diaphragm 115 includes a plurality of slots 116 . Such a slot 116 is disposed on the acoustic hole 141 .
- the support layer 117 is formed on the vibrating diaphragm 115 .
- the support layer 117 may be formed in an edge portion of the vibrating diaphragm 115 and may support the fixed electrode 125 .
- a first contact hole 121 exposing the vibrating diaphragm 115 is formed in the support layer 117 .
- a first pad 135 is formed in the first contact hole 121 .
- the first pad 135 is formed in the first contact hole 121 and is connected to the vibrating diaphragm 115 .
- the first pad 135 may be formed of a metal.
- the fixed electrode 125 is formed to be spaced apart from the vibrating diaphragm 115 .
- the fixed electrode 125 includes a plurality of air inlets 129 .
- the fixed electrode 125 is formed and fixed to the support layer 117 .
- the fixed electrode 125 may be formed of polysilicon or a metal.
- An air layer is formed between the vibrating diaphragm 115 and the fixed electrode 125 .
- the vibrating diaphragm 115 and the fixed electrode 125 are formed to be spaced apart from one another by an interval.
- An acoustic signal is introduced through the acoustic hole 141 from the outside to stimulate the vibrating diaphragm 115 , and accordingly, the vibrating diaphragm 115 vibrates.
- the vibrating diaphragm 115 vibrates, a space between the vibrating diaphragm 115 and the fixed electrode 125 is changed, and accordingly, an acoustic signal between the vibrating diaphragm 115 and the fixed electrode 125 is changed.
- the thusly changed acoustic signal is output to a processing module through a first pad 135 connected to the vibrating diaphragm 115 and a second pad 137 connected to the fixed electrode 125 .
- a case in which the vibrating diaphragm 115 and the fixed electrode 125 are separately formed is described as an example, but the present disclosure is not limited thereto and the vibrating diaphragm 115 and the fixed electrode 125 may be formed as a single layer.
- the insulating layer 131 is formed on the fixed electrode 125 , and a second contact hole 130 exposing the fixed electrode 125 is formed in the insulating layer 131 .
- the second pad 137 is formed in the second contact hole 130 .
- the insulating layer 131 may be formed of silicon nitride.
- the second pad 137 is formed in the second contact hole 130 and connected to the fixed electrode 125 .
- the second pad 137 may be formed of a metal.
- FIGS. 4 to 16 are views sequentially illustrating a method for manufacturing a microphone 50 according to the exemplary embodiment.
- a substrate 110 is prepared to form an acoustic element 100 , and a filter layer 155 is formed on one side of the substrate 110 to form an acoustic dispersion filter 150 . That is, the substrate formed of silicon is prepared, and ions are implanted on one side of the substrate 110 formed of silicon to form the filter layer 155 .
- an oxide film 113 and a vibrating diaphragm 115 are formed on the substrate 110 .
- the oxide film 113 is formed on the other side of the substrate 110 from the filter layer 155 , and the vibrating diaphragm 115 is formed on the oxide film 113 . That is, a conductive layer for forming the vibrating diaphragm 115 is formed on the oxide film 113 .
- the conductive layer may be formed of a polysilicon layer of a conductive material.
- a photosensitive layer is formed on the conductive layer and exposed and developed to form a photosensitive pattern, and the conductive layer is subsequently etched using the photosensitive pattern as a mask to form the vibrating diaphragm 115 including the plurality of slots 116 .
- a support layer 117 is formed on the substrate 110 and the vibrating diaphragm 115 .
- the support layer 117 may be formed of a silicon oxide or a silicon nitride.
- a plurality of depressed portions 119 are formed in the support layer 117 .
- the plurality of depressed portions 119 may be formed by etching an upper portion of the support layer 117 .
- a fixed electrode 125 is formed on the support layer 117 .
- an electrode layer for forming the fixed electrode 125 is formed on the support layer 117 , and the fixed electrode 125 including a plurality of air inlets 129 is formed using the electrode layer as a mask.
- a plurality of protrusion portions 127 are formed on the fixed electrode 125 such that the plurality of protrusion portions 127 may be inserted into the plurality of depressed portions 119 formed on the support layer 117 .
- the plurality of protrusion portions 127 may prevent the vibrating diaphragm 115 and the fixed electrode 125 from coming into contact with each other when the vibrating diaphragm 115 vibrates.
- the support layer 117 is etched to form a first contact hole 121 . That is, one side of the support layer 117 is etched such that the vibrating diaphragm 115 is exposed, to thus form the first contact hole 121 .
- the first contact hole 121 is a hole exposing a portion of the vibrating diaphragm 115 to allow for conduction.
- an insulating layer 131 is formed on the support layer 117 and the fixed electrode 125 .
- the insulating layer 131 may be formed of a silicon nitride.
- the fixed electrode 125 and the insulating layer 131 may be etched to form a plurality of air inlets 129 .
- the plurality of air inlets 129 may be positioned between the protrusions 127 formed in the fixed electrode 125 .
- the insulating layer 131 may be etched to expose the vibrating diaphragm 115 and the fixed electrode 125 . That is, the vibrating diaphragm 115 corresponding to the first contact hole 121 and the fixed electrode 125 corresponding to the second electrode hole 130 may be exposed by etching portions of the insulating layer 131 .
- a first pad 135 and a second pad 137 are formed on the insulating layer 131 . That is, the first pad 135 connected to the vibrating diaphragm 115 is formed in the first contact hole 121 and the insulating layer 131 , and the second pad 137 connected to the fixed electrode 125 is formed in the second contact hole 130 and the insulating layer 131 .
- the first pad 135 and the second pad 137 may be formed of a metal so as to be electrically in contact with a processing module.
- the filter layer 155 formed on one side of the substrate 110 is etched to form an acoustic dispersion filter 150 including a plurality of through holes 160 .
- the substrate 110 is etched to from an acoustic hole 141 . That is, the acoustic hole 141 is formed by etching the substrate 110 using the acoustic dispersion filter 150 as a mask.
- the acoustic hole 141 may be formed in a position corresponding to the plurality of through holes 160 .
- the oxide film 113 formed on the substrate 110 is removed and the support layer 117 of a portion corresponding to the acoustic hole 141 is etched.
- the acoustic element 100 and the case 200 are bonded.
- first inlet 213 and a second inlet 215 having different widths are formed.
- the acoustic element 100 and the case 200 may be bonded through an adhesive.
- the adhesive may be any type of adhesive as long as it can bond the acoustic element 100 and the case 200 , and may be an epoxy, for example.
- the acoustic element 100 and the case 200 may be bonded such that the acoustic inlet 210 including the first inlet 213 and the second inlet 215 is positioned in a position corresponding to the acoustic hole 141 of the acoustic element 100 . Also, the acoustic inlet 210 of the case 200 may be formed in a position corresponding to the plurality of through holes 160 included in the acoustic dispersion filter 150 .
- the acoustic dispersion filter 150 formed on one side of the acoustic element 100 may protect the acoustic element 100 from a change in stress that occurs when the acoustic element 100 is bonded to the case 200 , and may prevent distortion of the package.
Abstract
A microphone includes an acoustic element including an acoustic hole; a case disposed below the acoustic element and including an acoustic inlet formed in a position corresponding to the acoustic hole; and a plurality of through holes formed between the acoustic element and the case and formed in a position corresponding to the acoustic hole.
Description
- This application claims the benefit of priority to Korean Patent Application No. 10-2015-0064847, filed on May 26, 2016 in the Korean Intellectual Property Office, the entirety of which is incorporated herein by reference.
- The present disclosure relates to a microphone and, more particularly, to a microphone with durability enhanced through an acoustic dispersion filter provided between an acoustic element and a case, and a manufacturing method thereof.
- In general, microphones are devices converting a voice into an electrical signal. Microphones are required to have desirable electronic and acoustic performance, reliability, and operability. Microphones have increasingly been reduced in size. Thus, there has been research into microphones using a micro-electro mechanical system (MEMS) technology.
- MEMS microphones are manufactured using a semiconductor batch process. MEMS microphones have tolerance to moisture and heat, and can be miniaturized and integrated with a signal processing circuit, compared with conventional electric condenser microphones (ECMs).
- Also, MEMS microphones have excellent sensitivity and low performance deviation by products, compared with conventional ECMs. Thus, MEMS microphones have been applied to various application fields, replacing ECMs.
- In general, MEMS microphones may be classified as piezoelectric MEMS microphones and capacitive MEMS microphones.
- A piezoelectric MEMS microphone includes a vibrating diaphragm, and when the vibrating diaphragm is deformed by external sound, an electrical signal is generated according to a piezoelectric effect to thus measure sound pressure.
- A capacitive MEMS microphone includes a fixed electrode and a vibrating diaphragm, and when external sound is applied to the vibrating diaphragm, a space between the fixed electrode and the vibrating diaphragm is changed, thus altering a value of a capacitance. Sound pressure is measured according to the generated electrical signal.
- However, most MEMS microphones have a chamber formed by etching on a silicon substrate on one side thereof to allow a sound to pass therethrough, and as the size of an acoustic element is decreased, an area of a vibrating diaphragm is increased against the overall size. In such a structure, if an external impact is applied to a wafer substrate, distortion thereof, or the like, affects residual stress of the vibrating diaphragm itself, and here, stress of the vibrating diaphragm is changed by the external impact to degrade sensitivity of the microphone.
- That is, in the related art MEMS microphone, the vibrating diaphragm itself sensing a sound is so thin that it is damaged by a physical external impact in many cases, compared with other condenser-type microphones such as an ECB, or the like.
- Matters described in the background art section are provided to promote understanding of the background of the present disclosure, which may include matter that is not prior art known to those skilled in the art to which the present disclosure pertains.
- The above information disclosed in this Background section is only for enhancement of understanding of the background of the disclosure and therefore it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art.
- The present disclosure has been made in an effort to provide a microphone including an acoustic dispersion filter protecting a vibrating diaphragm of an acoustic element from an external impact, and a manufacturing method thereof.
- The present disclosure has also been made in an effort to provide a microphone including an acoustic dispersion filter provided between an acoustic element and a case.
- An exemplary embodiment in the present disclosure provides a microphone including: an acoustic element including an acoustic hole; a case disposed below the acoustic element and including an acoustic inlet formed in a position corresponding to the acoustic hole; and a plurality of through holes formed between the acoustic element and the case and formed in a position corresponding to the acoustic hole.
- The acoustic element may include: a substrate including the acoustic hole; a vibrating diaphragm formed on the substrate and vibrated by an acoustic signal input through the acoustic inlet; and a fixed electrode formed on the vibrating diaphragm and spaced apart from the vibrating diaphragm by an interval.
- The substrate of the acoustic element may be formed of silicon, and the acoustic dispersion filter may be formed of ion-implanted silicon.
- Another exemplary embodiment in the present disclosure provides a method for manufacturing a microphone including steps of: forming an acoustic element including an acoustic dispersion filter formed on one side of the acoustic element; forming a case including an acoustic inlet; and bringing the acoustic element and the case into contact with each other. The acoustic dispersion filter includes a plurality of through holes, the acoustic element includes an acoustic hole, and the acoustic hole, the plurality of through holes, and the acoustic inlet are formed in positions corresponding to each other.
- According to exemplary embodiments in the present disclosure, since the acoustic dispersion filter is formed between the acoustic element and the case, an acoustic signal having high pressure, or air pressure, may be dispersed and not concentrated on the center of the vibrating diaphragm, thus protecting the vibrating diaphragm. Also, a change in performance due to a change in stress that occurs when the acoustic element is attached to the case may be prevented through the acoustic dispersion filter, and a distortion phenomenon due to an external impact, or the like, may be prevented.
- Other effects that can be obtained or expected from the embodiments in the present disclosure will be explicitly or implicitly disclosed by the detailed description of the embodiments. That is, various effects expected from the exemplary embodiments in the present disclosure will be disclosed in the following description.
-
FIG. 1 is a view schematically illustrating a microphone according to an exemplary embodiment in the present disclosure. -
FIG. 2 is a view schematically illustrating a microphone according to another exemplary embodiment in the present disclosure. -
FIG. 3 is a view illustrating an acoustic element according to an exemplary embodiment in the present disclosure. -
FIGS. 4 to 16 are views sequentially illustrating a method for manufacturing a microphone according to an exemplary embodiment in the present disclosure. - Hereinafter, an operational principle of a microphone and a manufacturing method thereof according to exemplary embodiments in the present disclosure will be described in detail with reference to the accompanying drawings. However, the accompanying drawings and detailed descriptions hereinafter related to a preferred one of various exemplary embodiments to effectively described features of the present disclosure. Thus, the present disclosure should not be limited to the accompanying drawings and descriptions.
- Also, in describing exemplary embodiments in the present disclosure, if it is determined that a detailed description of known functions and components unnecessarily obscure the gist of the present disclosure, the detailed description thereof will be omitted. The terms used henceforth are defined in consideration of the functions of the exemplary embodiments, and may be altered according to the intent of a user or operator, or conventional practice. Therefore, the terms should be defined on the basis of the entire content of this specification.
- Also, in the following description of the exemplary embodiments, in order to effectively describe core technical features of the embodiments, terms will be appropriately deformed, integrated, or separately used such that a person skilled in the art to which the present disclosure pertains may clearly understand it, but the present disclosure is not limited thereto.
- Hereinafter, exemplary embodiments in the present disclosure will be described with reference to the accompanying drawings.
-
FIG. 1 is a view schematically illustrating a microphone according to an exemplary embodiment in the present disclosure, andFIG. 2 is a view schematically illustrating a microphone according to another exemplary embodiment. - Referring to
FIG. 1 , amicrophone 50 includes anacoustic element 100, anacoustic dispersion filter 150, and acase 200. - The
acoustic element 100 processes an acoustic signal introduced from the outside and transmits the processed acoustic signal to a processing module (not shown). That is, theacoustic element 100 may receive an acoustic signal through anacoustic hole 141 formed in asubstrate 110 from the outside, may be vibrated by sound pressure according to the received acoustic signal to generate an electrical signal, and may transmit the generated electrical signal to the processing module. - The
acoustic element 100 may be configured using a micro-electro mechanical system (MEMS) technology. - The
acoustic element 100 will be described in more detail below with reference toFIG. 3 . - The
acoustic dispersion filter 150 is positioned between theacoustic element 100 and thecase 200. That is, theacoustic dispersion filter 150 is disposed below theacoustic element 100 and above thecase 200. - The
acoustic dispersion filter 150 includes a plurality of throughholes 160. The plurality of throughholes 160 may be provided in positions corresponding to anacoustic hole 141 provided in thesubstrate 110, and may be provided in positions corresponding to anacoustic inlet 210 of theacoustic dispersion filter 150. The plurality of throughholes 160 may disperse an acoustic signal having high pressure or air pressure introduced to the acoustic element so as not to concentrate on the vibratingdiaphragm 115 or thefixed electrode 125 of theacoustic element 100. Thus, themicrophone 50 according to an exemplary embodiment in the present disclosure may be prevented from being damaged by air pressure or an acoustic signal having high pressure introduced from the outside through theacoustic dispersion filter 150. - The
acoustic dispersion filter 150 is ion-implanted to be formed on one side of thesubstrate 110 formed of silicon. Hardness of theacoustic dispersion filter 150 may be greater than that of theacoustic element 100. Thus, in themicrophone 50 according to the present exemplary embodiment, since theacoustic element 100 is attached to thecase 200 through theacoustic dispersion filter 150, a change in performance that may be made according to a change in stress due to an adhesive may be prevented. - The
case 200 is positioned below theacoustic element 100 and includes anacoustic inlet 210. - The
acoustic inlet 210 is a passage through which an acoustic signal generated from the outside is introduced. Theacoustic inlet 210 may be formed in a position corresponding to theacoustic hole 141 of theacoustic element 100. - A width W2 of the
acoustic inlet 210 may be equal to a width W1 of theacoustic hole 141. - Furthermore, as illustrated in
FIG. 2 , theacoustic inlet 210 may include afirst inlet 213 and asecond inlet 215. - A width W3 of the
first inlet 213 may be different from a width W4 of thesecond inlet 215. - That is, the width W3 of the
first inlet 213 may be greater than the width W4 of thesecond inlet 215. For example, the width W3 of thefirst inlet 213 may be greater than or equal to the width W1 of theacoustic hole 141, and the width W4 of thesecond inlet 215 may be narrower than the width W1 of theacoustic hole 141. - When the width W3 of the
first inlet 213 is greater than the width W4 of thesecond inlet 215, an acoustic signal introduced from the outside may be input to theacoustic element 100 in a dispersed manner. - The
case 200 may be formed of any one material among a metal, a flame retardant 4 (FR4), and ceramic. A cross-section of thecase 200 may have a polygonal shape, such as a quadrangular shape, or it may have a circular or oval shape. -
FIG. 3 is a view illustrating an acoustic element according to an exemplary embodiment in the present disclosure. - Referring to
FIG. 3 , theacoustic element 100 includes thesubstrate 110, a vibratingdiaphragm 115, asupport layer 117, a fixedelectrode 125, and an insulatinglayer 131. - The
substrate 110 may be formed of silicon, and includes anacoustic hole 141. - The vibrating
diaphragm 115 is formed on thesubstrate 110 and covers theacoustic hole 141 formed on thesubstrate 110. A portion of the vibratingdiaphragm 115 is exposed by theacoustic hole 141, and a portion of the vibratingdiaphragm 115 exposed by theacoustic hole 141 vibrates according to an acoustic signal introduced from the outside. - The vibrating
diaphragm 115 includes a plurality ofslots 116. Such aslot 116 is disposed on theacoustic hole 141. - The
support layer 117 is formed on the vibratingdiaphragm 115. Thesupport layer 117 may be formed in an edge portion of the vibratingdiaphragm 115 and may support the fixedelectrode 125. - A
first contact hole 121 exposing the vibratingdiaphragm 115 is formed in thesupport layer 117. Afirst pad 135 is formed in thefirst contact hole 121. - The
first pad 135 is formed in thefirst contact hole 121 and is connected to the vibratingdiaphragm 115. Thefirst pad 135 may be formed of a metal. - The fixed
electrode 125 is formed to be spaced apart from the vibratingdiaphragm 115. The fixedelectrode 125 includes a plurality ofair inlets 129. The fixedelectrode 125 is formed and fixed to thesupport layer 117. - The fixed
electrode 125 may be formed of polysilicon or a metal. - An air layer is formed between the vibrating
diaphragm 115 and the fixedelectrode 125. The vibratingdiaphragm 115 and the fixedelectrode 125 are formed to be spaced apart from one another by an interval. An acoustic signal is introduced through theacoustic hole 141 from the outside to stimulate the vibratingdiaphragm 115, and accordingly, the vibratingdiaphragm 115 vibrates. When the vibratingdiaphragm 115 vibrates, a space between the vibratingdiaphragm 115 and the fixedelectrode 125 is changed, and accordingly, an acoustic signal between the vibratingdiaphragm 115 and the fixedelectrode 125 is changed. The thusly changed acoustic signal is output to a processing module through afirst pad 135 connected to the vibratingdiaphragm 115 and asecond pad 137 connected to the fixedelectrode 125. - A case in which the vibrating
diaphragm 115 and the fixedelectrode 125 are separately formed is described as an example, but the present disclosure is not limited thereto and the vibratingdiaphragm 115 and the fixedelectrode 125 may be formed as a single layer. - The insulating
layer 131 is formed on the fixedelectrode 125, and asecond contact hole 130 exposing the fixedelectrode 125 is formed in the insulatinglayer 131. Thesecond pad 137 is formed in thesecond contact hole 130. - The insulating
layer 131 may be formed of silicon nitride. - The
second pad 137 is formed in thesecond contact hole 130 and connected to the fixedelectrode 125. Thesecond pad 137 may be formed of a metal. - A method for manufacturing the
microphone 50 according to an exemplary embodiment in the present disclosure will be described with reference toFIGS. 4 through 16 .FIGS. 4 to 16 are views sequentially illustrating a method for manufacturing amicrophone 50 according to the exemplary embodiment. - Referring to
FIG. 4 , asubstrate 110 is prepared to form anacoustic element 100, and afilter layer 155 is formed on one side of thesubstrate 110 to form anacoustic dispersion filter 150. That is, the substrate formed of silicon is prepared, and ions are implanted on one side of thesubstrate 110 formed of silicon to form thefilter layer 155. - Referring to
FIG. 5 , anoxide film 113 and a vibratingdiaphragm 115 are formed on thesubstrate 110. - In other words, the
oxide film 113 is formed on the other side of thesubstrate 110 from thefilter layer 155, and the vibratingdiaphragm 115 is formed on theoxide film 113. That is, a conductive layer for forming the vibratingdiaphragm 115 is formed on theoxide film 113. Here, the conductive layer may be formed of a polysilicon layer of a conductive material. - A photosensitive layer is formed on the conductive layer and exposed and developed to form a photosensitive pattern, and the conductive layer is subsequently etched using the photosensitive pattern as a mask to form the vibrating
diaphragm 115 including the plurality ofslots 116. - Referring to
FIG. 6 , asupport layer 117 is formed on thesubstrate 110 and the vibratingdiaphragm 115. Thesupport layer 117 may be formed of a silicon oxide or a silicon nitride. - Referring to
FIG. 7 , a plurality ofdepressed portions 119 are formed in thesupport layer 117. The plurality ofdepressed portions 119 may be formed by etching an upper portion of thesupport layer 117. - Referring to
FIG. 8 , a fixedelectrode 125 is formed on thesupport layer 117. - In other words, an electrode layer for forming the fixed
electrode 125 is formed on thesupport layer 117, and the fixedelectrode 125 including a plurality ofair inlets 129 is formed using the electrode layer as a mask. - A plurality of
protrusion portions 127 are formed on the fixedelectrode 125 such that the plurality ofprotrusion portions 127 may be inserted into the plurality ofdepressed portions 119 formed on thesupport layer 117. The plurality ofprotrusion portions 127 may prevent the vibratingdiaphragm 115 and the fixedelectrode 125 from coming into contact with each other when the vibratingdiaphragm 115 vibrates. - Referring to
FIG. 9 , thesupport layer 117 is etched to form afirst contact hole 121. That is, one side of thesupport layer 117 is etched such that the vibratingdiaphragm 115 is exposed, to thus form thefirst contact hole 121. Thefirst contact hole 121 is a hole exposing a portion of the vibratingdiaphragm 115 to allow for conduction. - Referring to
FIG. 10 , an insulatinglayer 131 is formed on thesupport layer 117 and the fixedelectrode 125. The insulatinglayer 131 may be formed of a silicon nitride. - Referring to
FIG. 11 , the fixedelectrode 125 and the insulatinglayer 131 may be etched to form a plurality ofair inlets 129. The plurality ofair inlets 129 may be positioned between theprotrusions 127 formed in the fixedelectrode 125. - Referring to
FIG. 12 , the insulatinglayer 131 may be etched to expose the vibratingdiaphragm 115 and the fixedelectrode 125. That is, the vibratingdiaphragm 115 corresponding to thefirst contact hole 121 and the fixedelectrode 125 corresponding to thesecond electrode hole 130 may be exposed by etching portions of the insulatinglayer 131. - Referring to
FIG. 13 , afirst pad 135 and asecond pad 137 are formed on the insulatinglayer 131. That is, thefirst pad 135 connected to the vibratingdiaphragm 115 is formed in thefirst contact hole 121 and the insulatinglayer 131, and thesecond pad 137 connected to the fixedelectrode 125 is formed in thesecond contact hole 130 and the insulatinglayer 131. - The
first pad 135 and thesecond pad 137 may be formed of a metal so as to be electrically in contact with a processing module. - The
filter layer 155 formed on one side of thesubstrate 110 is etched to form anacoustic dispersion filter 150 including a plurality of throughholes 160. - Referring to
FIG. 14 , thesubstrate 110 is etched to from anacoustic hole 141. That is, theacoustic hole 141 is formed by etching thesubstrate 110 using theacoustic dispersion filter 150 as a mask. Here, theacoustic hole 141 may be formed in a position corresponding to the plurality of throughholes 160. - Referring to
FIG. 15 , theoxide film 113 formed on thesubstrate 110 is removed and thesupport layer 117 of a portion corresponding to theacoustic hole 141 is etched. - Referring to
FIG. 16 , theacoustic element 100 and thecase 200 are bonded. - Furthermore, a
first inlet 213 and asecond inlet 215 having different widths are formed. - The
acoustic element 100 and thecase 200 may be bonded through an adhesive. The adhesive may be any type of adhesive as long as it can bond theacoustic element 100 and thecase 200, and may be an epoxy, for example. - The
acoustic element 100 and thecase 200 may be bonded such that theacoustic inlet 210 including thefirst inlet 213 and thesecond inlet 215 is positioned in a position corresponding to theacoustic hole 141 of theacoustic element 100. Also, theacoustic inlet 210 of thecase 200 may be formed in a position corresponding to the plurality of throughholes 160 included in theacoustic dispersion filter 150. - Accordingly, the
acoustic dispersion filter 150 formed on one side of theacoustic element 100 may protect theacoustic element 100 from a change in stress that occurs when theacoustic element 100 is bonded to thecase 200, and may prevent distortion of the package. - While this disclosure includes description with reference to the exemplary embodiments, it would be understood by a person skilled in the art that the present invention may be variously modified and altered included within the spirit and scope of the present invention described in the appended claims.
Claims (12)
1. A microphone comprising:
an acoustic element including an acoustic hole;
a case disposed below the acoustic element and including an acoustic inlet formed in a position corresponding to the acoustic hole; and
a plurality of through holes formed between the acoustic element and the case and formed in a position corresponding to the acoustic hole.
2. The microphone of claim 1 , wherein:
the acoustic element comprises:
a substrate including the acoustic hole;
a vibrating diaphragm formed on the substrate and vibrated by an acoustic signal input through the acoustic inlet; and
a fixed electrode disposed above the vibrating diaphragm and spaced apart from the vibrating diaphragm by an interval.
3. The microphone of claim 1 , wherein:
the substrate of the acoustic element is formed of silicon, and the acoustic dispersion filter is formed of ion-implanted silicon.
4. The microphone of claim 1 , wherein:
the acoustic inlet includes a first inlet and a second inlet having different widths.
5. A method for manufacturing a microphone, the method comprising steps of:
forming an acoustic element including an acoustic dispersion filter on one side of the acoustic element;
forming a case including an acoustic inlet; and
bringing the acoustic element and the case into contact with each other,
wherein the acoustic dispersion filter includes a plurality of through holes, the acoustic element includes an acoustic hole, and
the acoustic hole, the plurality of through holes, and the acoustic inlet are formed in positions corresponding to each other.
6. The method of claim 5 , wherein:
the step of forming the acoustic element including the acoustic dispersion filter formed on one side of the acoustic element comprises steps of:
preparing a substrate;
forming a filter layer on one side of the substrate;
forming a vibrating diaphragm and a fixed electrode on the other side of the substrate; and
etching the filter layer to form the acoustic dispersion filter including the plurality of through holes.
7. The method of claim 6 , wherein:
the step of forming the filter layer comprises:
implanting ions into one side of the substrate formed of silicon to form the filter layer.
8. The method of claim 6 , wherein:
the step of forming the vibrating diaphragm and the fixed electrode on the other side of the substrate comprises steps of:
forming a vibrating diaphragm on the other side of the substrate;
forming a support layer on the vibrating diaphragm;
forming a fixed electrode on the support layer;
forming an insulating layer on the support layer and the fixed electrode; and
etching the substrate to form an acoustic hole.
9. The method of claim 8 , further comprising steps of:
after the step of forming the support layer on the vibrating diaphragm,
etching the support layer to form a first contact hole such that the vibrating diaphragm is exposed;
forming a fixed electrode on the support layer;
forming an insulating layer on the support layer and the fixed electrode;
etching the insulating layer such that the vibrating diaphragm formed on the first contact hole is exposed, and etching the insulating layer to form a second contact hole such that the fixed electrode is exposed; and
forming a first pad in the first contact hole and on the insulating layer and forming a second pad in the second contact hole and on the insulating layer.
10. The method of claim 8 , wherein:
the step of etching the substrate to form the acoustic hole comprises a step of:
etching the substrate using the acoustic dispersion filter as a mask to form the acoustic hole.
11. The method of claim 8 , further comprising a step of:
after the step of etching the substrate to form the acoustic hole,
etching the support layer in a position corresponding to the acoustic hole such that the vibrating diaphragm and the fixed electrode are spaced apart from one another.
12. The method of claim 8 , wherein:
in the step of forming the case including the acoustic inlet,
the case including the acoustic inlet including a first inlet and a second inlet having different widths is formed.
Priority Applications (1)
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US16/192,407 US10681455B2 (en) | 2016-05-26 | 2018-11-15 | Microphone and manufacturing method thereof |
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KR1020160064847A KR101807040B1 (en) | 2016-05-26 | 2016-05-26 | Microphone |
KR10-2016-0064847 | 2016-05-26 |
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US16/192,407 Division US10681455B2 (en) | 2016-05-26 | 2018-11-15 | Microphone and manufacturing method thereof |
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US20170347185A1 true US20170347185A1 (en) | 2017-11-30 |
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US15/263,594 Abandoned US20170347185A1 (en) | 2016-05-26 | 2016-09-13 | Microphone and manufacturing method thereof |
US16/192,407 Active US10681455B2 (en) | 2016-05-26 | 2018-11-15 | Microphone and manufacturing method thereof |
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US16/192,407 Active US10681455B2 (en) | 2016-05-26 | 2018-11-15 | Microphone and manufacturing method thereof |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180070181A1 (en) * | 2016-09-02 | 2018-03-08 | Hyundai Motor Company | Microphone and manufacturing method thereof |
CN108419193A (en) * | 2018-05-22 | 2018-08-17 | 杭州电子科技大学 | Capacitive MEMS microphone and preparation method thereof with frequency selection function |
CN114697824A (en) * | 2020-12-28 | 2022-07-01 | 深圳市韶音科技有限公司 | Vibration sensor |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102342403B1 (en) * | 2020-09-08 | 2021-12-23 | 한국생산기술연구원 | MEMS microphone back plate with acoustic hole structure to improve acoustic characteristics |
CN112118522B (en) * | 2020-09-29 | 2022-04-29 | 瑞声声学科技(深圳)有限公司 | MEMS microphone |
CN213403502U (en) * | 2020-10-22 | 2021-06-08 | 青岛歌尔智能传感器有限公司 | MEMS chip |
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US20070001551A1 (en) * | 2005-06-30 | 2007-01-04 | Sanyo Electric Co., Ltd. | Sonic sensor and diaphragm |
US20100284553A1 (en) * | 2009-05-11 | 2010-11-11 | Stmicroelectronics S.R.L. | Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof |
US20120237073A1 (en) * | 2011-03-18 | 2012-09-20 | Analog Devices, Inc. | Packages and methods for packaging mems microphone devices |
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KR100941893B1 (en) | 2007-12-10 | 2010-02-16 | (주) 알에프세미 | Silicon MEMS microphone of capacitor type |
US8472648B2 (en) | 2009-01-20 | 2013-06-25 | General Mems Corporation | Miniature MEMS condenser microphone package and fabrication method thereof |
DE102009019446B4 (en) | 2009-04-29 | 2014-11-13 | Epcos Ag | MEMS microphone |
JP6445158B2 (en) * | 2014-08-27 | 2018-12-26 | ゴルテック.インク | MEMS device with valve mechanism |
-
2016
- 2016-05-26 KR KR1020160064847A patent/KR101807040B1/en active IP Right Grant
- 2016-09-13 US US15/263,594 patent/US20170347185A1/en not_active Abandoned
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2018
- 2018-11-15 US US16/192,407 patent/US10681455B2/en active Active
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US20070001551A1 (en) * | 2005-06-30 | 2007-01-04 | Sanyo Electric Co., Ltd. | Sonic sensor and diaphragm |
US20100284553A1 (en) * | 2009-05-11 | 2010-11-11 | Stmicroelectronics S.R.L. | Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof |
US20120237073A1 (en) * | 2011-03-18 | 2012-09-20 | Analog Devices, Inc. | Packages and methods for packaging mems microphone devices |
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US20180070181A1 (en) * | 2016-09-02 | 2018-03-08 | Hyundai Motor Company | Microphone and manufacturing method thereof |
US10616687B2 (en) | 2016-09-02 | 2020-04-07 | Hyundai Motor Company | Microphone and manufacturing method thereof |
CN108419193A (en) * | 2018-05-22 | 2018-08-17 | 杭州电子科技大学 | Capacitive MEMS microphone and preparation method thereof with frequency selection function |
CN114697824A (en) * | 2020-12-28 | 2022-07-01 | 深圳市韶音科技有限公司 | Vibration sensor |
Also Published As
Publication number | Publication date |
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KR101807040B1 (en) | 2017-12-08 |
KR20170133712A (en) | 2017-12-06 |
US10681455B2 (en) | 2020-06-09 |
US20190090048A1 (en) | 2019-03-21 |
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