US20170290147A1 - Circuit-and-heat-dissipation assembly and method of making the same - Google Patents
Circuit-and-heat-dissipation assembly and method of making the same Download PDFInfo
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- US20170290147A1 US20170290147A1 US15/623,202 US201715623202A US2017290147A1 US 20170290147 A1 US20170290147 A1 US 20170290147A1 US 201715623202 A US201715623202 A US 201715623202A US 2017290147 A1 US2017290147 A1 US 2017290147A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000012212 insulator Substances 0.000 claims abstract description 43
- 239000003054 catalyst Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000007772 electroless plating Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 27
- 238000009713 electroplating Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 238000000608 laser ablation Methods 0.000 claims description 5
- 238000005476 soldering Methods 0.000 claims description 5
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0284—Details of three-dimensional rigid printed circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09018—Rigid curved substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10113—Lamp
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0709—Catalytic ink or adhesive for electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
Definitions
- Embodiments of the invention generally relate to a circuit-and-heat-dissipation assembly and a method of making the same, more particularly to a circuit-and-heat-dissipation assembly including a heat sink and a patterned circuit formed on the heat sink.
- FIGS. 1A to 1F illustrate consecutive steps of a method of making an electronic assembly, such as a headlight electronic module.
- the method includes: enclosing an aluminum substrate 11 with an insulator layer 12 (see FIG. 1A ); forming a copper layer 13 on the insulator layer 12 so as to form a circuit preform 10 (see FIG. 1B ); attaching the circuit preform 10 to a planar plate 151 of a heat sink 15 through a thermal grease 14 (see FIG. 1C ); patterning the copper layer 13 to form a circuit pattern 131 on the insulator layer 12 using semiconductor processing techniques (see FIG.
- the circuit pattern 131 having enlarged soldering ends 132 (serving as bonding pads 132 ); forming a solder mask layer 134 on the circuit pattern 131 (see FIG. 1E ); and mounting a plurality of electronic components 17 , such as LED chips, on the circuit pattern 131 using surface mounting techniques, such that the electronic components 17 are bonded to the bonding pads 132 , respectively (see FIG. 1F with reference to FIG. 1E ).
- a circuit-and-heat-dissipation assembly may be provided.
- a circuit-and-heat-dissipation assembly may include: a heat sink including a heat absorbing base and a heat dissipating element, the heat absorbing base having a circuit-forming surface and an element-forming surface opposite to the circuit-forming surface, the heat dissipating element being connected to and protruding from the element-forming surface for dissipating heat conducted from the heat absorbing base into an ambient environment; an insulator layer formed on the circuit-forming surface; and a patterned circuit formed on the insulator layer.
- a method of making a circuit-and-heat-dissipation assembly may be provided. Such a method may include: preparing a heat sink that includes a heat absorbing base and a heat dissipating element, the heat absorbing base having a circuit-forming surface and an element-forming surface, the heat dissipating element protruding from the element-forming surface for dissipating heat conducted from the heat absorbing base into an ambient environment; forming an insulator layer on the circuit-forming surface; and forming a patterned circuit on the insulator layer.
- a circuit-and-heat-dissipation assembly may be provided.
- Such a circuit-and-heat-dissipation assembly may include: a heat sink including a circuit-forming surface; an insulator layer formed on the circuit-forming surface; a patterned circuit formed on the insulator layer, the patterned circuit including at least one pair of spaced apart conductive lines; and a heat-dissipating block formed on the circuit-forming surface and extending therefrom through the insulator layer toward the conductive lines.
- FIGS. 1A to 1F are perspective views illustrating consecutive steps of a method of making an electronic assembly
- FIGS. 2A to 2E are perspective views illustrating consecutive steps of a method of making a circuit-and-heat-dissipation assembly in certain embodiments according to the disclosure
- FIG. 3 is a perspective view illustrating a step of forming an electroplating layer that may be included in the method of making the circuit-and-heat-dissipation assembly in certain embodiments according to the disclosure;
- FIGS. 4A to 4C are perspective views illustrating consecutive steps of forming a patterned catalyst seed layer that may be included in the method of making the circuit-and-heat-dissipation assembly in certain embodiments according to the disclosure;
- FIGS. 5A and 5B are perspective views illustrating steps of patterning a flexible sheet to form a patterned mask and attaching the patterned mask onto a heat sink that may be included in the method of making the circuit-and-heat-dissipation assembly in certain embodiments according to the disclosure;
- FIG. 6 is a perspective view illustrating a step of patterning a flexible sheet to form a patterned mask that may be included in the method of making the circuit-and-heat-dissipation assembly in certain embodiments according to the disclosure.
- FIG. 7 is a schematic view illustrating a step of forming a heat dissipating block that may be included in the method of making the circuit-and-heat-dissipation assembly in certain embodiments according to the disclosure.
- FIGS. 2A to 2E illustrate consecutive steps of certain embodiments of a method of making a circuit-and-heat-dissipation assembly, such as a headlight electronic module.
- the method may include the following consecutive steps (see FIGS. 2A to 2E ).
- a heat sink 2 is prepared (see FIG. 2A ), and includes a heat absorbing base 21 having a circuit-forming surface 211 and an element-forming surface 212 opposite to the circuit-forming surface 211 , and a heat dissipating element 22 connected to and protruding from the heat absorbing base 21 for dissipating heat conducted from the heat absorbing base 21 into an ambient environment.
- An insulator layer 3 is then formed on the circuit-forming surface 211 (see FIG. 2B ).
- a patterned catalyst seed layer 41 comprising an active metal is formed on the insulator layer 3 (see FIG. 2C ).
- a reduced metal layer 42 is then formed on the patterned catalyst seed layer 41 (see FIG. 2D ) by reducing metal ions in an electroless plating bath (not shown) through the catalyst seed layer 41 .
- the reduced metal layer 42 cooperates with the patterned catalyst seed layer 41 to define a patterned electroless plating layer 51 .
- a plurality of electronic components 6 such as LED chips, are mounted on the patterned electroless plating layer 51 (see FIG. 2E ).
- the patterned electroless plating layer 51 alone serves as a patterned circuit 5 for direct mounting of the electronic components 6 thereon.
- the patterned circuit 5 includes pairs of spaced apart conductive lines 50 , each of which has an enlarged soldering end 501 .
- Each of the electronic components 6 may be bonded or soldered to the enlarged soldering ends 501 of a corresponding pair of the conductive lines 50 using techniques, such as surface mount technology.
- the conductive lines 50 may have a thickness ranging from 18 ⁇ m to 20 ⁇ m and a line width ranging from 3 mm to 10 mm.
- the active metal may be selected from the group consisting of palladium, rhodium, platinum, iridium, osmium, gold, nickel, iron, and combinations thereof.
- the reduced metal layer 42 formed from the electroless plating may contain a metallic material having a heat conductivity (K) greater than 95 W/m ⁇ K and a resistance ( ⁇ ) less than 75 n ⁇ m.
- K heat conductivity
- ⁇ resistance
- the heat dissipating element 22 may be in the form of a structure selected from the group consisting of fins, a heat pipe, and combinations thereof. In certain embodiments, the heat dissipating element 22 may be in the form of fins.
- the heat sink 2 is a single piece. In certain embodiments, the heat sink 2 may be made from aluminum extrudate.
- the insulator layer 3 may be formed on the circuit-forming surface 211 using electrophoretic deposition techniques, and may be made from a resin material, such as epoxy.
- the insulator layer 3 may extend continuously from the circuit-forming surface 211 to the element-forming surface 212 .
- the insulator layer 3 may enclose an entire outer surface of the heat sink 2 .
- the method may further include forming a patterned electroplating layer 52 on the electroless plating layer 51 using electroplating techniques.
- the patterned electroplating layer 52 and the electroless plating layer 51 cooperatively define the patterned circuit 5 for mounting of the electronic components 6 thereon.
- the heat absorbing base 21 is curved in shape and the patterned catalyst seed layer 41 may be formed on the insulator layer 3 by: covering the insulator layer 3 with a patterned mask 8 (see FIG. 4A ), the patterned mask 8 being formed with a pattern of through-holes 81 that corresponds to a pattern of the patterned catalyst seed layer 41 ; applying a curable ink 40 containing the active metal onto the patterned mask 8 to fill the through-holes 81 with the curable ink 40 using a sprayer 91 (see FIG. 4B ); removing the patterned mask 8 from the insulator layer 3 (see FIG.
- the patterned catalyst seed layer 41 may be formed by applying a powder coating material containing the active metal onto the patterned mask 8 or by immersing the assembly of the patterned mask 8 , the insulator layer 3 and the heat sink 2 in a solution containing the active metal.
- the patterned mask 8 may be formed by placing a flexible sheet 82 against a planar surface of a substrate 92 , followed by patterning the flexible sheet 82 using a laser beam 93 through laser ablation or laser burnout techniques (see FIG. 5A ).
- the circuit-forming surface 211 of the heat absorbing base 21 may be curved in shape (see FIG. 5B ), so that a covering surface 301 of the insulator layer 3 that covers the circuit-forming surface 211 may also be curved in shape. Since the patterned mask 8 thus formed is flexible, the same can conform to a curved profile of the covering surface 301 or the circuit-forming surface 211 when covering the insulator layer 3 .
- the flexible sheet 82 may be directly placed against the covering surface 301 of the insulator layer 3 (which has a curved profile) during laser ablation (see FIG. 6 ).
- the patterned mask 8 may be made from a material selected from the group consisting of polyethylene terephthalate and rubber.
- the method may further include the steps of: forming a plurality of holes 31 in the insulator layer 3 , such that the holes 31 expose a plurality of contact regions 2112 of the circuit-forming surface 211 , each of the holes 31 being aligned with a gap 502 defined by two enlarged soldering ends 501 of a corresponding pair of the conductive lines 50 of the patterned circuit 5 ; and forming a plurality of heat dissipating blocks 72 on the contact regions 2112 , respectively, such that each of the heat dissipating blocks 72 extends toward a corresponding pair of the conductive lines 50 from the corresponding contact region 2112 through the corresponding hole 31 in the insulator layer 3 and into the corresponding gap 502 to contact a heat sink or heat dissipating substrate (not shown) of a corresponding one of the electronic components 6 .
- the heat dissipating blocks 72 may be made from a thermal grease, and may be formed by coating techniques.
- the holes 31 in the insulator layer 3 may be formed after formation of the patterned circuit 5 using laser ablation techniques. Alternatively, the holes 31 in the insulator layer 3 may be formed before formation of the patterned circuit 5 .
- the method may include: forming a non-patterned catalyst seed layer (not shown) on the insulator layer 3 ; forming a non-patterned reduced metal layer (not shown) on the non-patterned catalyst seed layer 41 ; and patterning the non-patterned reduced metal layer and the non-patterned catalyst seed layer 41 and forming the holes 31 in the insulator layer 3 using laser ablation techniques.
- the heat generated from the electronic components 6 may be conducted through the patterned circuit 5 , the insulator layer 3 and the heat sink 2 into the atmosphere, which renders the circuit-and-heat-dissipation assembly of the certain embodiments more efficient in heat dissipation as compared to the aforesaid electronic assembly.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structure Of Printed Boards (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Disclosed herein is a circuit-and-heat-dissipation assembly which includes: a heat sink including a heat absorbing base and a heat dissipating element, the heat absorbing base having a circuit-forming surface and an element-forming surface, the heat dissipating element protruding from the element-forming surface for dissipating heat conducted from the heat absorbing base into an ambient environment; an insulator layer formed on the circuit-forming surface; and a patterned circuit formed on the insulator layer and having an electroless plating layer which has a patterned catalyst seed layer comprising an active metal and formed on the insulator layer, and a reduced metal layer formed on the catalyst seed layer. Also disclosed herein is a method of making the circuit-and-heat-dissipation assembly.
Description
- This application is a divisional application of U.S. patent application Ser. No. 14/744,496, filed on Jun. 19, 2015, which claims priority of Taiwanese Patent Application No. 103121575, filed on Jun. 23, 2014. This application claims the benefits and priority of all these prior applications and incorporates by reference the contents of these prior applications in their entirety.
- Embodiments of the invention generally relate to a circuit-and-heat-dissipation assembly and a method of making the same, more particularly to a circuit-and-heat-dissipation assembly including a heat sink and a patterned circuit formed on the heat sink.
-
FIGS. 1A to 1F illustrate consecutive steps of a method of making an electronic assembly, such as a headlight electronic module. The method includes: enclosing analuminum substrate 11 with an insulator layer 12 (seeFIG. 1A ); forming acopper layer 13 on theinsulator layer 12 so as to form a circuit preform 10 (seeFIG. 1B ); attaching the circuit preform 10 to aplanar plate 151 of aheat sink 15 through a thermal grease 14 (seeFIG. 1C ); patterning thecopper layer 13 to form acircuit pattern 131 on theinsulator layer 12 using semiconductor processing techniques (seeFIG. 1D ), thecircuit pattern 131 having enlarged soldering ends 132 (serving as bonding pads 132); forming asolder mask layer 134 on the circuit pattern 131 (seeFIG. 1E ); and mounting a plurality ofelectronic components 17, such as LED chips, on thecircuit pattern 131 using surface mounting techniques, such that theelectronic components 17 are bonded to thebonding pads 132, respectively (seeFIG. 1F with reference toFIG. 1E ). - There may be a need for providing a method of making an electronic assembly that is simple and cost effective.
- In certain embodiments of the disclosure, a circuit-and-heat-dissipation assembly may be provided. Such a circuit-and-heat-dissipation assembly may include: a heat sink including a heat absorbing base and a heat dissipating element, the heat absorbing base having a circuit-forming surface and an element-forming surface opposite to the circuit-forming surface, the heat dissipating element being connected to and protruding from the element-forming surface for dissipating heat conducted from the heat absorbing base into an ambient environment; an insulator layer formed on the circuit-forming surface; and a patterned circuit formed on the insulator layer.
- In certain embodiments of the disclosure, a method of making a circuit-and-heat-dissipation assembly may be provided. Such a method may include: preparing a heat sink that includes a heat absorbing base and a heat dissipating element, the heat absorbing base having a circuit-forming surface and an element-forming surface, the heat dissipating element protruding from the element-forming surface for dissipating heat conducted from the heat absorbing base into an ambient environment; forming an insulator layer on the circuit-forming surface; and forming a patterned circuit on the insulator layer.
- In certain embodiments of the disclosure, a circuit-and-heat-dissipation assembly may be provided. Such a circuit-and-heat-dissipation assembly may include: a heat sink including a circuit-forming surface; an insulator layer formed on the circuit-forming surface; a patterned circuit formed on the insulator layer, the patterned circuit including at least one pair of spaced apart conductive lines; and a heat-dissipating block formed on the circuit-forming surface and extending therefrom through the insulator layer toward the conductive lines.
- Other features and advantages of the disclosure will become apparent in the following detailed description of the exemplary embodiments with reference to the accompanying drawings, of which:
-
FIGS. 1A to 1F are perspective views illustrating consecutive steps of a method of making an electronic assembly; -
FIGS. 2A to 2E are perspective views illustrating consecutive steps of a method of making a circuit-and-heat-dissipation assembly in certain embodiments according to the disclosure; -
FIG. 3 is a perspective view illustrating a step of forming an electroplating layer that may be included in the method of making the circuit-and-heat-dissipation assembly in certain embodiments according to the disclosure; -
FIGS. 4A to 4C are perspective views illustrating consecutive steps of forming a patterned catalyst seed layer that may be included in the method of making the circuit-and-heat-dissipation assembly in certain embodiments according to the disclosure; -
FIGS. 5A and 5B are perspective views illustrating steps of patterning a flexible sheet to form a patterned mask and attaching the patterned mask onto a heat sink that may be included in the method of making the circuit-and-heat-dissipation assembly in certain embodiments according to the disclosure; -
FIG. 6 is a perspective view illustrating a step of patterning a flexible sheet to form a patterned mask that may be included in the method of making the circuit-and-heat-dissipation assembly in certain embodiments according to the disclosure; and -
FIG. 7 is a schematic view illustrating a step of forming a heat dissipating block that may be included in the method of making the circuit-and-heat-dissipation assembly in certain embodiments according to the disclosure. - It may be noted that like elements are denoted by the same reference numerals throughout the disclosure.
-
FIGS. 2A to 2E illustrate consecutive steps of certain embodiments of a method of making a circuit-and-heat-dissipation assembly, such as a headlight electronic module. The method may include the following consecutive steps (seeFIGS. 2A to 2E ). Aheat sink 2 is prepared (seeFIG. 2A ), and includes aheat absorbing base 21 having a circuit-formingsurface 211 and an element-formingsurface 212 opposite to the circuit-formingsurface 211, and aheat dissipating element 22 connected to and protruding from theheat absorbing base 21 for dissipating heat conducted from theheat absorbing base 21 into an ambient environment. Aninsulator layer 3 is then formed on the circuit-forming surface 211 (seeFIG. 2B ). After that, a patternedcatalyst seed layer 41 comprising an active metal is formed on the insulator layer 3 (seeFIG. 2C ). A reducedmetal layer 42 is then formed on the patterned catalyst seed layer 41 (seeFIG. 2D ) by reducing metal ions in an electroless plating bath (not shown) through thecatalyst seed layer 41. The reducedmetal layer 42 cooperates with the patternedcatalyst seed layer 41 to define a patternedelectroless plating layer 51. Thereafter, a plurality ofelectronic components 6, such as LED chips, are mounted on the patterned electroless plating layer 51 (seeFIG. 2E ). - In these embodiments, the patterned
electroless plating layer 51 alone serves as a patternedcircuit 5 for direct mounting of theelectronic components 6 thereon. Particularly, the patternedcircuit 5 includes pairs of spaced apartconductive lines 50, each of which has an enlargedsoldering end 501. Each of theelectronic components 6 may be bonded or soldered to the enlargedsoldering ends 501 of a corresponding pair of theconductive lines 50 using techniques, such as surface mount technology. Theconductive lines 50 may have a thickness ranging from 18 μm to 20 μm and a line width ranging from 3 mm to 10 mm. - In certain embodiments, the active metal may be selected from the group consisting of palladium, rhodium, platinum, iridium, osmium, gold, nickel, iron, and combinations thereof. The reduced
metal layer 42 formed from the electroless plating may contain a metallic material having a heat conductivity (K) greater than 95 W/m·K and a resistance (ρ) less than 75 nΩ·m. One Example of the metallic material may be copper (K=400 W/m·K, ρ=16.78 nΩ·m). - In certain embodiments, the
heat dissipating element 22 may be in the form of a structure selected from the group consisting of fins, a heat pipe, and combinations thereof. In certain embodiments, theheat dissipating element 22 may be in the form of fins. - In certain embodiments, the
heat sink 2 is a single piece. In certain embodiments, theheat sink 2 may be made from aluminum extrudate. - In certain embodiments, the
insulator layer 3 may be formed on the circuit-formingsurface 211 using electrophoretic deposition techniques, and may be made from a resin material, such as epoxy. Theinsulator layer 3 may extend continuously from the circuit-formingsurface 211 to the element-formingsurface 212. In certain embodiments, theinsulator layer 3 may enclose an entire outer surface of theheat sink 2. - In certain embodiments, referring to
FIG. 3 , in combination withFIG. 2E , the method may further include forming a patternedelectroplating layer 52 on theelectroless plating layer 51 using electroplating techniques. In these embodiments, the patternedelectroplating layer 52 and theelectroless plating layer 51 cooperatively define the patternedcircuit 5 for mounting of theelectronic components 6 thereon. - In certain embodiments, the patterned
electroplating layer 52 may be made from nickel (K=99.9 W/m·K, ρ=69.3 nΩ·m). - In certain embodiments, referring to
FIGS. 4A to 4C , theheat absorbing base 21 is curved in shape and the patternedcatalyst seed layer 41 may be formed on theinsulator layer 3 by: covering theinsulator layer 3 with a patterned mask 8 (seeFIG. 4A ), the patternedmask 8 being formed with a pattern of through-holes 81 that corresponds to a pattern of the patternedcatalyst seed layer 41; applying acurable ink 40 containing the active metal onto the patternedmask 8 to fill the through-holes 81 with thecurable ink 40 using a sprayer 91 (seeFIG. 4B ); removing the patternedmask 8 from the insulator layer 3 (seeFIG. 4C ); and curing thecurable ink 40 to form the patterned catalyst seed layer 41 (seeFIG. 4C ). Alternatively, the patternedcatalyst seed layer 41 may be formed by applying a powder coating material containing the active metal onto the patternedmask 8 or by immersing the assembly of the patternedmask 8, theinsulator layer 3 and theheat sink 2 in a solution containing the active metal. - In certain embodiments, referring to
FIGS. 5A and 5B , the patternedmask 8 may be formed by placing aflexible sheet 82 against a planar surface of asubstrate 92, followed by patterning theflexible sheet 82 using alaser beam 93 through laser ablation or laser burnout techniques (seeFIG. 5A ). In certain embodiments, the circuit-formingsurface 211 of theheat absorbing base 21 may be curved in shape (seeFIG. 5B ), so that acovering surface 301 of theinsulator layer 3 that covers the circuit-formingsurface 211 may also be curved in shape. Since the patternedmask 8 thus formed is flexible, the same can conform to a curved profile of the coveringsurface 301 or the circuit-formingsurface 211 when covering theinsulator layer 3. Alternatively, theflexible sheet 82 may be directly placed against the coveringsurface 301 of the insulator layer 3 (which has a curved profile) during laser ablation (seeFIG. 6 ). - In certain embodiments, the patterned
mask 8 may be made from a material selected from the group consisting of polyethylene terephthalate and rubber. - In certain embodiments, referring to
FIG. 7 , the method may further include the steps of: forming a plurality ofholes 31 in theinsulator layer 3, such that theholes 31 expose a plurality ofcontact regions 2112 of the circuit-formingsurface 211, each of theholes 31 being aligned with agap 502 defined by two enlarged soldering ends 501 of a corresponding pair of theconductive lines 50 of the patternedcircuit 5; and forming a plurality ofheat dissipating blocks 72 on thecontact regions 2112, respectively, such that each of theheat dissipating blocks 72 extends toward a corresponding pair of theconductive lines 50 from thecorresponding contact region 2112 through the correspondinghole 31 in theinsulator layer 3 and into thecorresponding gap 502 to contact a heat sink or heat dissipating substrate (not shown) of a corresponding one of theelectronic components 6. - In certain embodiments, the
heat dissipating blocks 72 may be made from a thermal grease, and may be formed by coating techniques. - In certain embodiments, the
holes 31 in theinsulator layer 3 may be formed after formation of the patternedcircuit 5 using laser ablation techniques. Alternatively, theholes 31 in theinsulator layer 3 may be formed before formation of the patternedcircuit 5. For instance, the method may include: forming a non-patterned catalyst seed layer (not shown) on theinsulator layer 3; forming a non-patterned reduced metal layer (not shown) on the non-patternedcatalyst seed layer 41; and patterning the non-patterned reduced metal layer and the non-patternedcatalyst seed layer 41 and forming theholes 31 in theinsulator layer 3 using laser ablation techniques. - In certain embodiments, the heat generated from the
electronic components 6 may be conducted through the patternedcircuit 5, theinsulator layer 3 and theheat sink 2 into the atmosphere, which renders the circuit-and-heat-dissipation assembly of the certain embodiments more efficient in heat dissipation as compared to the aforesaid electronic assembly. - While the disclosure has been described in connection with what are considered the exemplary embodiments, it is understood that this disclosure is not limited to the disclosed embodiments but is intended to cover various arrangements included within the spirit and scope of the broadest interpretation so as to encompass all such modifications and equivalent arrangements.
Claims (10)
1. A method of making a circuit-and-heat-dissipation assembly, comprising:
preparing a heat sink that includes a heat absorbing base and a heat dissipating element, the heat absorbing base having a circuit-forming surface and an element-forming surface, the heat dissipating element protruding from the element-forming surface for dissipating heat conducted from the heat absorbing base into an ambient environment;
forming an insulator layer on the circuit-forming surface; and
forming a patterned circuit on the insulator layer,
wherein the patterned circuit is formed on the insulator layer by forming a patterned electroless plating layer on the insulator layer using electroless plating techniques, and
wherein the patterned electroless plating layer is formed on the insulator layer by: forming a catalyst seed layer comprising an active metal on the insulator layer; and forming a reduced metal layer on the catalyst seed layer by reducing metal ions through the catalyst seed layer.
2. The method as claimed in claim 1 , wherein the catalyst seed layer is a patterned catalyst seed layer.
3. The method as claimed in claim 1 , wherein the catalyst seed layer is a non-patterned catalyst seed layer and is subjected to patterning.
4. The method as claimed in claim 1 , wherein a patterned electroplating layer is formed on the electroless plating layer using electroplating techniques.
5. The method as claimed in claim 2 , wherein the patterned catalyst seed layer is formed on the insulator layer by:
covering the insulator layer with a patterned mask, the patterned mask being formed with a pattern of through-holes that corresponds to a pattern of the patterned catalyst seed layer; and
applying an ink containing the active metal onto the patterned mask to fill the through-holes with the ink.
6. The method as claimed in claim 5 , wherein the pattern of the patterned mask is formed by laser ablation techniques.
7. The method as claimed in claim 5 , wherein the circuit-forming surface of the heat absorbing base is curved in shape, the patterned mask being flexible and conforming to the circuit-forming surface when covering the insulator layer.
8. The method as claimed in claim 1 , further comprising:
forming at least one hole in the insulator layer, such that the hole exposes a contact region of the circuit-forming surface and that the hole is aligned with a gap defined by two soldering ends of a pair of conductive lines of the patterned circuit; and
forming a heat dissipating block on the contact region, such that the heat dissipating block extends from the contact region through the hole in the insulator layer and into the gap.
9. The method as claimed in claim 1 , wherein the heat dissipating element is in the form of fins.
10. The method as claimed in claim 1 , wherein the reduced metal layer is formed on the catalyst seed layer by reducing the metal ions in an electroless plating bath through the catalyst seed layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/623,202 US20170290147A1 (en) | 2014-06-23 | 2017-06-14 | Circuit-and-heat-dissipation assembly and method of making the same |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103121575A TWI538574B (en) | 2014-06-23 | 2014-06-23 | Electronic foundation with heat dissipation and method for making the same |
| TW103121575 | 2014-06-23 | ||
| US14/744,469 US9713263B2 (en) | 2014-06-23 | 2015-06-19 | Circuit-and-heat-dissipation assembly and method of making the same |
| US15/623,202 US20170290147A1 (en) | 2014-06-23 | 2017-06-14 | Circuit-and-heat-dissipation assembly and method of making the same |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US14/744,469 Division US9713263B2 (en) | 2014-06-23 | 2015-06-19 | Circuit-and-heat-dissipation assembly and method of making the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20170290147A1 true US20170290147A1 (en) | 2017-10-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US14/744,469 Active US9713263B2 (en) | 2014-06-23 | 2015-06-19 | Circuit-and-heat-dissipation assembly and method of making the same |
| US15/623,202 Abandoned US20170290147A1 (en) | 2014-06-23 | 2017-06-14 | Circuit-and-heat-dissipation assembly and method of making the same |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
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| US14/744,469 Active US9713263B2 (en) | 2014-06-23 | 2015-06-19 | Circuit-and-heat-dissipation assembly and method of making the same |
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| Country | Link |
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| US (2) | US9713263B2 (en) |
| TW (1) | TWI538574B (en) |
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| US6451155B1 (en) * | 1995-11-30 | 2002-09-17 | International Business Machines Corporation | Method using a thin adhesion promoting layer for bonding silicone elastomeric material to nickel and use thereof in making a heat sink assembly |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201601601A (en) | 2016-01-01 |
| TWI538574B (en) | 2016-06-11 |
| US20150373832A1 (en) | 2015-12-24 |
| US9713263B2 (en) | 2017-07-18 |
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