US20160320247A1 - System for on-chip temperature measurement in integrated circuits - Google Patents

System for on-chip temperature measurement in integrated circuits Download PDF

Info

Publication number
US20160320247A1
US20160320247A1 US15210208 US201615210208A US2016320247A1 US 20160320247 A1 US20160320247 A1 US 20160320247A1 US 15210208 US15210208 US 15210208 US 201615210208 A US201615210208 A US 201615210208A US 2016320247 A1 US2016320247 A1 US 2016320247A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
diode
current source
voltage
current
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15210208
Inventor
William N. Schnaitter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ic Kinetics Inc
Original Assignee
Ic Kinetics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements
    • G01K7/01Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements using semiconducting elements having PN junctions

Abstract

A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, and the second diode may be coupled to an adjustable second current source. The current in the second diode may be adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.

Description

    RELATED APPLICATIONS
  • This patent is a continuation of and claims the benefit of the commonly owned and co-pending patent application Ser. No. 10/961,311 (attorney docket number TRAN-P378) filed Oct. 7, 2004, entitled “System For On-Chip Temperature Measurement In Integrated Circuits” which is a continuation of patent application Ser. No. 10/411,955 (attorney docket numberTRAN-P085) filed Apr. 10, 2003, entitled “System For On-Chip Temperature Measurement In Integrated Circuits” which are hereby incorporated by this reference.
  • FIELD OF THE INVENTION
  • Embodiments of the present invention relate to temperature measurement of integrated circuits. In particular, embodiments of the present invention relate to an on-chip temperature sensor for integrated circuits.
  • BACKGROUND ART
  • Temperature measurement in semiconductor devices such as integrated circuits on silicon substrates is often done by taking advantage of the fundamental relationship between the saturation current of a p-n junction and its temperature. This relationship is described by the Diode Equation shown below:

  • I=Is*[exp(qV/nkT)−1]
  • where,
      • Is=saturation current
      • q=electron charge
      • V=p-n junction voltage
      • n=ideality factor (between 1 and 2)
      • k=Boltzmann's constant
      • T=absolute temperature (K)
  • The ideality factor n is equal to 2 for pure recombination current (low voltage, low current density), and equal to 1 for pure diffusion current (higher voltages). When using a p-n junction as a temperature sensor, it is desirable that n be close to 1. However, high current densities should be avoided to minimize ohmic effects due to series resistances outside of the p-n junction. Ohmic effects can lead to a deviation from the Diode Equation.
  • FIG. 1 shows a conventional thermal sensor 100. A current source 105 with a single diode 110 is used, with sequential measurements being taken for current and voltage to obtain two I-V data pairs (I1, V1) and (I2, V2) for the diode 110. The temperature T is then calculated (neglecting the −1) from the Diode Equation as follows:

  • T=(q/nk)*(V 2-V 1)/(In(I 2/I1))
  • The (−1) term in the Diode Equation may be ignored since the resulting error is usually less than 1 part in 100,000 for all current densities of interest.
  • In conventional temperature measurements made using a single diode, there are a number of error sources that reduce the accuracy and reliability of the measurements. Also, the sequential measurements reduce the frequency with which measurements can be made.
  • In the measurement of the two voltages, the error associated with each individual measurement contributes to the total error for the term (V2-V1). Since this term is normally quite small (about one tenth of V2 or V1), the accuracy of the voltage measurements is critical. Also, voltage measurements usually involve an analog-to-digital conversion, with an associated quantization error that is counted twice.
  • Another source of error are leakage currents. For example, shunt resistance 120 may produce a deviation from the I-V characteristic expressed by the Diode Equation. Also, since the measurements are sequential, short term changes in the circuit state can affect the measurements. As previously described, a series resistance 115 may also introduce error.
  • SUMMARY OF INVENTION
  • Thus, a need exists for a more accurate temperature sensor for integrated circuits. There is also a need for a temperature sensor that eliminates the problems associated with sequential electrical measurements, as well as providing reduced errors, reduced noise, and an increased measurement frequency.
  • Accordingly, embodiments of the present invention provide on-chip temperature sensing through simultaneous electrical measurement of a plurality of diodes. The simultaneous measurement of more than one diode eliminates the need for sequential measurements and reduces quantization error.
  • In an embodiment of the present invention, two diodes are each coupled to a controlled current source. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes is coupled to the input of a differential amplifier. The output of the differential amplifier may be coupled to an analog-to-digital converter.
  • In another embodiment, a first diode is coupled to a first current source by a resistor with a known voltage drop, and a second diode is coupled to an adjustable second current source. The current in the second diode is adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.
  • Although the above embodiments describe the use of two diodes in parallel, three or more diodes may be used in parallel, with or without coupling resistors. The additional measurements may be used to further reduce error.
  • These and other objects and advantages of the present invention will no doubt become obvious to those of ordinary skill in the art after having read the following detailed description of the preferred embodiments which are illustrated in the various drawing figures.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. The drawings referred to in this description should not be understood as being drawn to scale except if specifically noted.
  • Prior Art FIG. 1 shows a thermal sensor with a single diode.
  • FIG. 2A shows a schematic diagram for a square layout of two diodes in accordance with an embodiment of the present claimed invention.
  • FIG. 2B shows a schematic diagram for an approximate circular layout of two diodes in accordance with an embodiment of the present claimed invention.
  • FIG. 3A shows a dual-diode thermal sensor, in accordance with an embodiment of the present claimed invention.
  • FIG. 3B shows a dual-diode thermal sensor with a sensing series resistor, in accordance with an embodiment of the present claimed invention.
  • FIG. 4 shows a current source servo controller, in accordance with an embodiment of the present claimed invention.
  • DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • In the following detailed description of the present invention, a system for on-chip temperature measurement in an integrated circuit, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be obvious to one skilled in the art that the present invention may be practiced without these specific details. In other instances well known methods involving photolithography, ion implantation, deposition and etch, etc., and well known circuit components such as current sources and amplifiers, etc., have not been described in detail so as not to unnecessarily obscure aspects of the present invention.
  • FIG. 2A shows a substrate layout pattern 200 for a first diode and a second diode in accordance with an embodiment of the present invention. The first diode comprises an array of discrete diode elements d1 and the second diode comprises an array of discrete diode elements d2. Separate interconnects may be fabricated to achieve parallel electrical connection between diodes d1, and between diodes d2.
  • In general, the diode arrays d1 and d2 are preferably laid out in an area with a small area moment (e.g. a square or a circle). A compact layout on the surface of the integrated circuit minimizes the overall spatially related variations between the diodes. It is also desirable that each of the diode arrays have a common centroid.
  • In a preferred embodiment, the exemplary pattern of FIG. 2A comprises 128 d1 diodes and 128 d2 diodes laid out in a square with a dimension of about 85 microns.
  • In achieving the desired layout, a sub-array 201 that has a common centroid and compact area, may be used as a tile to build the overall area for the two diodes.
  • FIG. 2B shows an approximate circular substrate layout pattern 205 that comprises the sub-array 201 of FIG. 2A. It is desirable that the total diode array have a shape that has two or more axes of symmetry.
  • FIG. 3A shows a dual-diode thermal sensor 300, in accordance with an embodiment of the present invention. The sensor 300 comprises a controller 315 for controlling the current output of a first current source 305 and a second current source 310. The first current source 305 is coupled to a first diode 320, and the second current source 310 is coupled to a second diode 325. Both diode 320 and diode 325 are coupled to ground.
  • The output ratio of current source 310 to current source 305 is fixed (I2=K*I1) within the range used for measurement, thereby eliminating the variable (I2/I1) term from the Diode Equation. Each of the current sources 305 and 310 may comprise an array of current source elements, wherein the arrays share a common centroid.
  • The voltage drop across each of the diodes 320 and 325 are input to a differential amplifier that in turn drives an analog-to-digital converter (ADC). Since voltage measurements are made simultaneously and the difference is quantized, only one quantization error is involved in the measurement.
  • FIG. 3B shows a dual-diode thermal sensor with a sensing series resistor 335, in accordance with an embodiment of the present invention. The output of Controller 315 controls current source 306 and current source 311. Current source 306 and current source 311 each comprises M and N identical small current source elements (iLSB), respectively. In this particular embodiment N is programmable, whereas M is fixed. However, in other embodiments, M may also be programmable.
  • The controller 315 controls the current level for each of the iLSB current sources that make up sources 306 and 311, and may also control the number of iLSB current sources that are active.
  • Similarly, resistor R1 335 may be made up of a number of identical small resistors (rLSB). Resistor R1 may be implemented as a programmable resistor by bypass switches (e.g., transistors with low Rds on) for one or more of the rLSB resistors. In this particular embodiment, R1 is considered as having a fixed value, with R rLSB resistors in series.
  • A high-gain op amp (comparator) 340 is coupled to receive VA and V2 as inputs. VA is the sum of the voltage drops across resistor R1 and diode D1 320, and V2 is the voltage drop across diode D2 325. The output of the comparator is coupled to a processor 345 that determines the diode temperature from the value of N established by controller 315, and a set of circuit parameters. N may be adjusted by the controller 315 until the comparator 340 switches, thus establishing the point at which VA=V2.
  • Since the entire thermometer 301 may fabricated on-chip, the negative impact of series resistances may be reduced considerably. The on-chip thermometer may also be tested and adjusted to compensate for observed deviations in temperature readings.
  • In testing, the temperature determined by the processor may be compared to the known value of the integrated circuit during test. A fuse array 350 may be used to program a correction that may be read and applied by the processor. For example an array of four fuses may provide 15 values for correction. In this case, an anticipated error range of +/−3K may thus be divided into 15 corrections that may be applied, ranging from −3K to +3K in increments of 0.4K. More fuses may be used to provide a greater range of corrections and/or a finer resolution of correction.
  • FIG. 4 shows a current source servo controller 400 that may be used by controller 315 for establishing the current level for each of the iLSB sources. An op amp 405 receives a precision reference voltage (e.g., bandgap reference) as one input. A second input is taken as the voltage across resistor R2 415, providing a servo loop that operates to set the current through R2 such that the voltage drop across R2 is equal to Vref.
  • In one embodiment, resistor R2 comprises a number of identical small resistors (rLSB), as are used in R1. In one embodiment, resistor R2 may be implemented as a programmable resistor by bypass switches (e.g., transistors with low Rds on) for one or more of the rLSB resistors. In this particular embodiment, R2 is considered as having a fixed value, comprising S rLSB resistors in series.
  • The servo loop current source Hoop 410 is made up of L iLSB current sources in parallel, similar to current sources I1 and I2 of FIG. 3B. In the example of FIG. 4, op amp (operational amplifier) 405 drives a current source 406 that is mirrored by each of the iLSB current sources in Iloop, I1 and I2. Alternatively, each iLSB current source may be a voltage controlled current source that is driven by the output of op amp 405.
  • Taking into account the configuration of the controller of FIG. 4 and the sensor circuit of FIG. 3B, the voltage drop across resistor R1 335 may be represented as:

  • V R1 =I1*R1=M*iLSB*R*rLSB=MR*(iLSB*rLSB)
  • also,

  • VR2=Iloop*R2=L*iLSB*S*rLSB,

  • Vref=VR2
  • Giving:

  • Vref/LS=iLSB*rLSB

  • V R1=(MR/LS)*V ref
  • It is appreciated that the voltage across R1, that is VR1, is a known quantity based upon the integer quantities M, R, L and S, and the reference voltage Vref. With this in mind, the operation of the system of FIG. 3B is described.
  • With reference to FIG. 3B, it is seen that since VA=VR1+V1 and VA=V2, VR1=V2−V1, which is one term required for a temperature solution based upon the Diode Equation, with the other term being the current ratio.
  • Referring again to FIG. 3B, N may be set equal to M by the controller 315, causing the voltage VA to be greater than V2. The programmable current source I2 311 may then be incrementally adjusted by sequentially switching in additional iLSB current sources in turn. Alternatively, a binomial search or other algorithm may be used to find the value of N at which VA=V2.
  • At some point, when a number J of additional iLSB sources have been switched in, V2 will exceed VA, causing the comparator 340 to change state. Although the incremental nature of the current increases prevents determining the exact current at which VA=V2, a range can be established and the range midpoint used for purposes of calculation. In this case, the current may be taken as (M+J−½)iLSB.
  • Thus, the current ratio I2/I1 corresponding to the diode voltages V1 and V2 has been determined as (M+J−½)/M. Although a specific scheme has been presented for adjusting the current source I2 and equalizing VA and V2, other starting values and modes of adjustment may be used. Also, another value within the comparator crossover range may used for purposes of calculation.
  • There are many factors to be considered in the selection of the component sizes and the values of the integers L, M, R, and S. Depending upon the process used for integrated circuit fabrication and the design of the circuit, the transistors (switches and current sources), diodes and resistors of the thermal sensor may vary considerably in size and number.
  • It is desirable to provide a common centroid for each of the current sources Iloop, I1, and I2. The centroid applies to the layout of the arrays of iLSB sources that make up each of the current sources Iloop, I1, I2. The centroid also applies to the subset of the current sources that may be switched on at a particular time. Thus, there is both a centroid associated with layout, and a centroid associated with operation.
  • For example, in a circuit for which the diode current limit was desired to be about 400 microamperes, 256 iLSB current sources with a nominal current of roughly 2 to 2.5 microamperes may be used. The maximum current is related to the minimum temperature that is to be measured accurately. Since high temperature accuracy is generally more important for a circuit than low temperature accuracy, the minimum accurate temperature is selected to be about 308K to 318K. It is desired to use a sufficiently high value for N (e.g., 120 to 160) at temperatures of interest (e.g., 340K to 385K) in order to minimize the impact of quantization error.
  • The error in the temperature measurement will be proportional to the error in the (V2-V1). Therefore, it is desirable to make (V2-V1) as large as possible relative to the resolution of the comparator. On the other hand, I2 and V2 should be kept from being too large and I1 and V1 should be kept from being to small. In this way, deviation from the Diode Equation can be minimized, and the ideality factor n kept close to 1. In view of these considerations dV=(V2-V1) may be targeted to be about 0.085 volts.
  • It is desired that the current ratio N/M be about 18 for the lowest temperature of interest: N/M=exp((q*dV)/(k*Tmin)), where N=160, corresponding to the Tmin of interest. Using dV=0.085 V, Tmin=340K, we get N/M=18.2, M=160/18.2=8.8, giving 9 for the fixed integer value of M.
  • The Vref level may be obtained from a bandgap reference. In order to reduce noise in reference signal, a voltage divider using two high value resistors may be used to divide the bandgap voltage. For example, two matched resistors may be used to divide a bandgap voltage of 1.175 volts in half to provide a Vref=0.5875 volts. The divider output may use a shunt capacitor to filter high frequency noise. The sensor circuit servo may be used to filter low frequency noise.
  • The relationships for S, L and R may now be examined. From above, SL=MR*(Vref/dV)=R1*62.2. To avoid having to make S and L too large, it is preferred that R be set close to 1. Using S=L=8, we get even numbers that help the centroiding for the resistors.
  • The calculated dV is then: dV=(MR/SL)*vRef=0.0826 V. Finally, a nominal value for rLSB is determined from rLSB=dV/(M*iLSB); using a nominal value of 2.0 microamperes for iLSB, rLSB=4.6 kohm. Thus, the solution for T from the Diode Equation becomes:
  • T = ( q / nk ) * dV / ln ( i 2 / i 1 ) = ( q / nk ) * ( ( MR * V ref / SL ) / ln ( N / M ) ) = 11600 K / V * ( 9 * ( 1.175 V / 2 ) / 64 ) / ln ( N / 9 ) . = 958.4 / ln ( N / 9 )
  • TABLE 1
    TEMPERATURE N*iLSB
    (K) N (microamperes)
    398.0 100 218
    396.4 101 220
    370.0 120 258
    368.8 121 260
    333.7 159 336
    333.0 160 338
    309.0 200 418
    308.5 201 420
  • Table 1 shows the calculated temperature for different values of N in accordance with the above solution for T. The step from N=100 to N=101 corresponds to a change in temperature from 398K to 396.4K, or a difference of 1.6K. In keeping with the practice of taking the midpoint of the interval in which the comparator changes state, the temperature measurement for this interval would be 397.2K, with a quantization error of +/−0.8K.
  • Although the quantization error for the interval between N=200 and N=201 is smaller than that for the interval for N=100 to N=101, it should be noted that the diode current is over 400 microamperes, and ohmic effects may affect the overall accuracy.
  • Although the simultaneous use of two diodes obviates the need for sequential measurements, the system of the present invention may be used to make sequential measurements using two different current levels. Thus, temperature measurements may be made in a conventional timeframe, but with increased accuracy.
  • In general, the accuracy requirement for temperature measurements on integrated circuits is on the order of +/−3K. Although the quantization may be reduced by using a 9-bit digital-to-analog converter (DAC) instead of the 8-bit DAC (256 iLSB sources) described herein, the quantization error of 0.8K is already low with respect to industry standards for overall accuracy.
  • The foregoing descriptions of specific embodiments of the present invention have been presented for purposes of illustration and description. They are not intended to be exhaustive or to limit the invention to the precise forms disclosed, and obviously many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and its practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the Claims appended hereto and their equivalents.

Claims (7)

  1. 1. A controller for an on-chip thermometer comprising:
    an operational amplifier having a first input coupled to a voltage reference, a second input and an output for coupling to said thermometer;
    a current source coupled to said output of said operational amplifier and to first and second diodes, wherein said current source comprises an array of current source elements; and
    a resistor having a first terminal and a second terminal, wherein said first terminal is coupled to said current source and to said second input of said operational amplifier;
    wherein said controller is operable to cause a first current in said first diode to be fixed while varying a second current in said second diode responsive to a feedback signal to alter the ratio of said first and second currents.
  2. 2. A current source servo circuit for establishing the current level for current sources used in a system for measuring temperature in an integrated circuit, said current source servo circuit comprising:
    a single output coupled to a fixed current source and also a variable current source; and
    a voltage source coupled to an input of an operational amplifier; and
    a voltage across a resistor coupled to the other input of said operational amplifier.
  3. 3. A current source servo circuit according to claim 2 wherein said voltage source is a band gap reference.
  4. 4. A current source servo circuit according to claim 2 wherein said resistor is related by construction to a resistor in said system for measuring temperature in an integrated circuit.
  5. 5. A current source servo circuit according to claim 5 and further for establishing a known voltage in said system for measuring temperature in an integrated circuit.
  6. 6. A servo circuit comprising:
    an output coupled to first and second thermal sensing diodes that are coupled to a comparator; and
    an input coupled to said comparator and receiving a feedback signal therefrom;
    wherein said servo circuit is operable to:
    cause a first fixed current in said first diode to establish a first voltage at a first input of said comparator while varying a second current through said second diode to establish a second voltage responsive to said feedback signal;
    cause said first and second voltages to be equal responsive to said feedback signal; and
  7. 7. A servo circuit as recited in claim 6, wherein said servo circuit is further operable to establish a known voltage, wherein said first voltage comprises said known voltage and a voltage across said first diode.
US15210208 2003-04-10 2016-07-14 System for on-chip temperature measurement in integrated circuits Abandoned US20160320247A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10411955 US7118273B1 (en) 2003-04-10 2003-04-10 System for on-chip temperature measurement in integrated circuits
US10961311 US7108420B1 (en) 2003-04-10 2004-10-07 System for on-chip temperature measurement in integrated circuits
US52452606 true 2006-09-19 2006-09-19
US15210208 US20160320247A1 (en) 2003-04-10 2016-07-14 System for on-chip temperature measurement in integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15210208 US20160320247A1 (en) 2003-04-10 2016-07-14 System for on-chip temperature measurement in integrated circuits

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US52452606 Continuation 2006-09-19 2006-09-19

Publications (1)

Publication Number Publication Date
US20160320247A1 true true US20160320247A1 (en) 2016-11-03

Family

ID=36974387

Family Applications (4)

Application Number Title Priority Date Filing Date
US10411955 Active 2023-06-14 US7118273B1 (en) 2003-04-10 2003-04-10 System for on-chip temperature measurement in integrated circuits
US10961311 Active US7108420B1 (en) 2003-04-10 2004-10-07 System for on-chip temperature measurement in integrated circuits
US13243976 Active US9222843B2 (en) 2003-04-10 2011-09-23 System for on-chip temperature measurement in integrated circuits
US15210208 Abandoned US20160320247A1 (en) 2003-04-10 2016-07-14 System for on-chip temperature measurement in integrated circuits

Family Applications Before (3)

Application Number Title Priority Date Filing Date
US10411955 Active 2023-06-14 US7118273B1 (en) 2003-04-10 2003-04-10 System for on-chip temperature measurement in integrated circuits
US10961311 Active US7108420B1 (en) 2003-04-10 2004-10-07 System for on-chip temperature measurement in integrated circuits
US13243976 Active US9222843B2 (en) 2003-04-10 2011-09-23 System for on-chip temperature measurement in integrated circuits

Country Status (1)

Country Link
US (4) US7118273B1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7828479B1 (en) * 2003-04-08 2010-11-09 National Semiconductor Corporation Three-terminal dual-diode system for fully differential remote temperature sensors
US7369816B2 (en) * 2004-08-06 2008-05-06 Broadcom Corporation Highly accurate temperature sensor employing mixed-signal components
US7212064B1 (en) * 2005-02-11 2007-05-01 Transmeta Corporation Methods and systems for measuring temperature using digital signals
US20060203883A1 (en) * 2005-03-08 2006-09-14 Intel Corporation Temperature sensing
US20070146293A1 (en) * 2005-12-27 2007-06-28 Hon-Yuan Leo LCOS integrated circuit and electronic device using the same
US7484886B2 (en) * 2006-05-03 2009-02-03 International Business Machines Corporation Bolometric on-chip temperature sensor
US7992117B2 (en) * 2006-06-20 2011-08-02 Adtran, Inc. System and method for designing a common centroid layout for an integrated circuit
US8096707B2 (en) * 2008-06-30 2012-01-17 Intel Corporation Thermal sensor device
US7772920B1 (en) * 2009-05-29 2010-08-10 Linear Technology Corporation Low thermal hysteresis bandgap voltage reference
EP2336741B1 (en) * 2009-12-18 2016-09-07 Nxp B.V. Self-calibration circuit and method for junction temperature estimation
US9299692B2 (en) 2014-02-07 2016-03-29 Analog Devices Global Layout of composite circuit elements
US9396849B1 (en) 2014-03-10 2016-07-19 Vishay Dale Electronics Llc Resistor and method of manufacture
US10120405B2 (en) * 2014-04-04 2018-11-06 National Instruments Corporation Single-junction voltage reference
US9310823B2 (en) * 2014-04-28 2016-04-12 Texas Instruments Incorporated Voltage reference
CN105987762B (en) * 2015-03-05 2018-09-28 上海炬力集成电路设计有限公司 A method and an on-chip temperature sensor to determine the temperature
US9519298B2 (en) * 2015-03-20 2016-12-13 Nxp B.V. Multi-junction semiconductor circuit and method
US9470583B1 (en) 2015-12-29 2016-10-18 International Business Machines Corporation Calibration-free temperature measurement
CN106289560A (en) * 2016-08-01 2017-01-04 湖南省耐为数控技术有限公司 Circuit for precisely detecting motor temperature
CN106482850A (en) * 2016-11-25 2017-03-08 北京兆芯电子科技有限公司 Temperature detecting device and temperature detecting method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4480312A (en) * 1981-08-14 1984-10-30 Wingate Steven L Temperature sensor/controller system
US4781065A (en) * 1984-05-09 1988-11-01 Cole Martin T Solid-state anemometers and temperature gauges
US5063307A (en) * 1990-09-20 1991-11-05 Ixys Corporation Insulated gate transistor devices with temperature and current sensor
US5519354A (en) * 1995-06-05 1996-05-21 Analog Devices, Inc. Integrated circuit temperature sensor with a programmable offset
US20020173724A1 (en) * 2001-05-18 2002-11-21 Dorando Dale Gene Signal conditioning device for interfacing intravascular sensors having varying operational characteristics to a physiology monitor
US6631503B2 (en) * 2001-01-05 2003-10-07 Ibm Corporation Temperature programmable timing delay system
US6876250B2 (en) * 2000-07-07 2005-04-05 International Business Machines Corporation Low-power band-gap reference and temperature sensor circuit
US7279954B2 (en) * 2001-03-27 2007-10-09 Nissan Motor Co., Ltd. On-chip temperature detection device
US7828479B1 (en) * 2003-04-08 2010-11-09 National Semiconductor Corporation Three-terminal dual-diode system for fully differential remote temperature sensors

Family Cites Families (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3074642A (en) 1960-08-26 1963-01-22 Electronic Associates Analog accumulator
US3471759A (en) 1966-12-23 1969-10-07 Gen Electric Pulse width modulation servo system including a unique transformerless demodulator
US3812717A (en) * 1972-04-03 1974-05-28 Bell Telephone Labor Inc Semiconductor diode thermometry
US4004462A (en) * 1974-06-07 1977-01-25 National Semiconductor Corporation Temperature transducer
US4071813A (en) * 1974-09-23 1978-01-31 National Semiconductor Corporation Temperature sensor
JPS5913052B2 (en) 1975-07-25 1984-03-27 Nippon Electric Co
US4224537A (en) * 1978-11-16 1980-09-23 Motorola, Inc. Modified semiconductor temperature sensor
US4243898A (en) * 1978-11-16 1981-01-06 Motorola, Inc. Semiconductor temperature sensor
JPS5573114A (en) 1978-11-28 1980-06-02 Nippon Gakki Seizo Kk Output offset control circuit for full step direct-coupled amplifier
US4280091A (en) * 1979-10-29 1981-07-21 Tektronix, Inc. Variable current source having a programmable current-steering network
US4317054A (en) 1980-02-07 1982-02-23 Mostek Corporation Bandgap voltage reference employing sub-surface current using a standard CMOS process
US4305724A (en) 1980-08-04 1981-12-15 Delphian Partners Combustible gas detection system
US4319318A (en) 1980-09-15 1982-03-09 California Institute Of Technology Voltage reapplication rate control for commutation of thyristors
JPS6351565B2 (en) * 1981-04-02 1988-10-14 Sony Corp
US4538199A (en) 1983-07-14 1985-08-27 Eaton Corporation Electrothermal wire responsive miniature precision current sensor
US4608530A (en) * 1984-11-09 1986-08-26 Harris Corporation Programmable current mirror
US4808908A (en) * 1988-02-16 1989-02-28 Analog Devices, Inc. Curvature correction of bipolar bandgap references
JPH0757116B2 (en) 1988-11-16 1995-06-14 ローム株式会社 The motor drive circuit
FR2650669B1 (en) 1989-08-04 1993-10-29 Equipement Menager Cie Europ Device for measuring cooking appliance for temperature induction and apparatus comprising such a device
US5023543A (en) 1989-09-15 1991-06-11 Gennum Corporation Temperature compensated voltage regulator and reference circuit
JP2749925B2 (en) * 1990-01-09 1998-05-13 株式会社リコー Ic temperature sensor
US5027053A (en) * 1990-08-29 1991-06-25 Micron Technology, Inc. Low power VCC /2 generator
GB9116245D0 (en) 1991-07-27 1991-09-11 Renishaw Metrology Ltd Sensing circuit for position-sensing probe
US5220207A (en) 1991-09-03 1993-06-15 Allegro Microsystems, Inc. Load current monitor for MOS driver
US5422832A (en) 1993-12-22 1995-06-06 Advanced Micro Devices Variable thermal sensor
JP3275547B2 (en) 1994-07-01 2002-04-15 株式会社デンソー Voltage - frequency conversion circuit
US5639163A (en) * 1994-11-14 1997-06-17 International Business Machines Corporation On-chip temperature sensing system
US5574678A (en) * 1995-03-01 1996-11-12 Lattice Semiconductor Corp. Continuous time programmable analog block architecture
US5623232A (en) * 1995-09-26 1997-04-22 Burr-Brown Corporation Topography for integrated circuit operational amplifier having low impedance input for current feedback
US5994937A (en) * 1996-11-06 1999-11-30 International Business Machines Corporation Temperature and power supply adjusted address transition detector
US6075407A (en) * 1997-02-28 2000-06-13 Intel Corporation Low power digital CMOS compatible bandgap reference
US6055489A (en) * 1997-04-15 2000-04-25 Intel Corporation Temperature measurement and compensation scheme
JPH10332494A (en) * 1997-06-03 1998-12-18 Oki Data:Kk Temperature detection circuit, driver and printer
US5867012A (en) 1997-08-14 1999-02-02 Analog Devices, Inc. Switching bandgap reference circuit with compounded ΔV.sub.βΕ
US6052020A (en) * 1997-09-10 2000-04-18 Intel Corporation Low supply voltage sub-bandgap reference
DE19743346C2 (en) * 1997-09-30 2000-09-21 Siemens Ag Circuit arrangement for the pulsed current regulation of inductive loads
US6149299A (en) * 1997-12-11 2000-11-21 National Semiconductor Corporation Direct temperature sensing of a semiconductor device semiconductor device
US6140860A (en) * 1997-12-31 2000-10-31 Intel Corporation Thermal sensing circuit
US6242974B1 (en) * 1998-03-25 2001-06-05 Micrel,Inc Self-calibrating operational amplifier
US6008685A (en) * 1998-03-25 1999-12-28 Mosaic Design Labs, Inc. Solid state temperature measurement
FR2781301B1 (en) 1998-07-20 2000-09-08 Alstom Technology current loop type of 4-20 milliamps or 0-20 milliamperes comprising a test circuit in parallel
US6111397A (en) * 1998-07-22 2000-08-29 Lsi Logic Corporation Temperature-compensated reference voltage generator and method therefor
JP3408161B2 (en) * 1998-08-27 2003-05-19 キヤノン株式会社 Temperature detection circuit and the photoelectric conversion circuit
JP3319406B2 (en) * 1998-09-18 2002-09-03 日本電気株式会社 Comparing amplification detection circuit
US6097239A (en) * 1999-02-10 2000-08-01 Analog Devices, Inc. Decoupled switched current temperature circuit with compounded ΔV be
US6215353B1 (en) * 1999-05-24 2001-04-10 Pairgain Technologies, Inc. Stable voltage reference circuit
CA2282862A1 (en) * 1999-09-17 2001-03-17 Northern Telecom Limited Signal-level compensation for communications circuits
US6275098B1 (en) * 1999-10-01 2001-08-14 Lsi Logic Corporation Digitally calibrated bandgap reference
US6567763B1 (en) * 1999-12-30 2003-05-20 Intel Corporation Analog temperature measurement apparatus and method
KR100697726B1 (en) * 2000-02-10 2007-03-21 페어차일드코리아반도체 주식회사 A lamp system equipped with an electric ballast
US6556067B2 (en) * 2000-06-13 2003-04-29 Linfinity Microelectronics Charge pump regulator with load current control
JP2002048651A (en) * 2000-08-04 2002-02-15 Nippon Precision Circuits Inc Semiconductor temperature detecting method and its circuit
US6724324B1 (en) 2000-08-21 2004-04-20 Delphi Technologies, Inc. Capacitive proximity sensor
JP2002150591A (en) 2000-11-10 2002-05-24 Pioneer Electronic Corp Recorder by optical recording medium and its recording method
JP2002150590A (en) 2000-11-10 2002-05-24 Pioneer Electronic Corp Recording device and method with optical recording medium
US6433624B1 (en) * 2000-11-30 2002-08-13 Intel Corporation Threshold voltage generation circuit
US6304109B1 (en) 2000-12-05 2001-10-16 Analog Devices, Inc. High gain CMOS amplifier
DE10106388C2 (en) 2001-02-12 2002-12-12 Infineon Technologies Ag Circuit arrangement for providing an exponential pre-emphasis for an adjustable amplifier
JP2002270768A (en) * 2001-03-08 2002-09-20 Nec Corp Cmos reference voltage circuit
US6554469B1 (en) * 2001-04-17 2003-04-29 Analog Devices, Inc. Four current transistor temperature sensor and method
US6628558B2 (en) 2001-06-20 2003-09-30 Cypress Semiconductor Corp. Proportional to temperature voltage generator
DE10133736A1 (en) 2001-07-11 2003-01-23 Philips Corp Intellectual Pty An arrangement for measuring the temperature of an electronic circuit
US6679628B2 (en) * 2001-08-14 2004-01-20 Schneider Automation Inc. Solid state temperature measuring device and method
US6563371B2 (en) * 2001-08-24 2003-05-13 Intel Corporation Current bandgap voltage reference circuits and related methods
US6489835B1 (en) * 2001-08-28 2002-12-03 Lattice Semiconductor Corporation Low voltage bandgap reference circuit
US6717449B2 (en) * 2001-10-23 2004-04-06 Olympus Corporation Variable resistance circuit and application circuits using the variable resistance circuit
FR2832519B1 (en) 2001-11-19 2004-02-20 St Microelectronics Sa current mirror circuit operating at elevated frequencies
US7052180B2 (en) 2002-01-04 2006-05-30 Kelvin Shih LED junction temperature tester
DE10204487B4 (en) 2002-01-30 2004-03-04 Infineon Technologies Ag temperature sensor
US6930537B1 (en) * 2002-02-01 2005-08-16 National Semiconductor Corporation Band-gap reference circuit with averaged current mirror offsets and method
US6749335B2 (en) 2002-05-17 2004-06-15 Sun Microsystems, Inc. Adjustment and calibration system for post-fabrication treatment of on-chip temperature sensor
KR100475736B1 (en) * 2002-08-09 2005-03-10 삼성전자주식회사 Temperature sensor having shifting temperature detection circuit for use in high speed test and method for detecting shifting temperature
JP2004088948A (en) 2002-08-28 2004-03-18 Yaskawa Electric Corp Switching method for transistor in ac servo controller
FR2844066A1 (en) 2002-08-28 2004-03-05 St Microelectronics Sa Control of quiescent currents in a direct frequency converter used in mobile telephones, uses closed loop regulation of common-mode quiescent current so it tracks reference current
JP2004146576A (en) * 2002-10-24 2004-05-20 Renesas Technology Corp Semiconductor temperature measuring circuit
US7104684B2 (en) 2002-11-29 2006-09-12 Sigmatel, Inc. On-chip digital thermometer to sense and measure device temperatures
US6736540B1 (en) 2003-02-26 2004-05-18 National Semiconductor Corporation Method for synchronized delta-VBE measurement for calculating die temperature
US20040252749A1 (en) 2003-06-13 2004-12-16 Randazzo Christoph Stefan Apparatus for performing a temperature measurement function and devices based thereon
US20040263213A1 (en) * 2003-06-26 2004-12-30 Oliver Kiehl Current source
US7118274B2 (en) * 2004-05-20 2006-10-10 International Business Machines Corporation Method and reference circuit for bias current switching for implementing an integrated temperature sensor
US7140767B2 (en) 2004-11-02 2006-11-28 Standard Microsystems Corporation Programmable ideality factor compensation in temperature sensors
JP5028748B2 (en) * 2005-04-15 2012-09-19 富士電機株式会社 Temperature measuring device of the power semiconductor devices
DE102005045635B4 (en) * 2005-09-23 2007-06-14 Austriamicrosystems Ag Arrangement and method for providing a temperature-dependent signal
JP4868918B2 (en) 2006-04-05 2012-02-01 株式会社東芝 The reference voltage generation circuit
US7887235B2 (en) 2006-08-30 2011-02-15 Freescale Semiconductor, Inc. Multiple sensor thermal management for electronic devices
KR100771884B1 (en) 2006-09-11 2007-11-01 삼성전자주식회사 Temperature sensing circuit with non-linearity cancellation characteristics
US7576939B2 (en) 2007-11-15 2009-08-18 Seagate Technology Llc Discontinuous mode back EMF measurement
JP5189882B2 (en) * 2008-04-11 2013-04-24 ルネサスエレクトロニクス株式会社 Temperature sensor circuit
US7841770B2 (en) 2008-05-29 2010-11-30 Hycon Technology Corp. Temperature measuring system and measuring method using the same
US7724068B1 (en) * 2008-12-03 2010-05-25 Micrel, Incorporated Bandgap-referenced thermal sensor
DE102009057107B4 (en) * 2009-12-04 2011-11-10 Micronas Gmbh Method and circuit for controlling switching transistors of an integrated circuit
US8864377B2 (en) * 2012-03-09 2014-10-21 Hong Kong Applied Science & Technology Research Institute Company Limited CMOS temperature sensor with sensitivity set by current-mirror and resistor ratios without limiting DC bias

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4480312A (en) * 1981-08-14 1984-10-30 Wingate Steven L Temperature sensor/controller system
US4781065A (en) * 1984-05-09 1988-11-01 Cole Martin T Solid-state anemometers and temperature gauges
US5063307A (en) * 1990-09-20 1991-11-05 Ixys Corporation Insulated gate transistor devices with temperature and current sensor
US5519354A (en) * 1995-06-05 1996-05-21 Analog Devices, Inc. Integrated circuit temperature sensor with a programmable offset
US6876250B2 (en) * 2000-07-07 2005-04-05 International Business Machines Corporation Low-power band-gap reference and temperature sensor circuit
US6631503B2 (en) * 2001-01-05 2003-10-07 Ibm Corporation Temperature programmable timing delay system
US7279954B2 (en) * 2001-03-27 2007-10-09 Nissan Motor Co., Ltd. On-chip temperature detection device
US20020173724A1 (en) * 2001-05-18 2002-11-21 Dorando Dale Gene Signal conditioning device for interfacing intravascular sensors having varying operational characteristics to a physiology monitor
US7828479B1 (en) * 2003-04-08 2010-11-09 National Semiconductor Corporation Three-terminal dual-diode system for fully differential remote temperature sensors

Also Published As

Publication number Publication date Type
US20120013364A1 (en) 2012-01-19 application
US7108420B1 (en) 2006-09-19 grant
US9222843B2 (en) 2015-12-29 grant
US7118273B1 (en) 2006-10-10 grant

Similar Documents

Publication Publication Date Title
US4739252A (en) Current attenuator useful in a very low leakage current measuring device
US5546041A (en) Feedback sensor circuit
US6542835B2 (en) Data collection methods and apparatus
US6642738B2 (en) Method and apparatus for field-effect transistor current sensing using the voltage drop across drain to source resistance that eliminates dependencies on temperature of the field-effect transistor and/or statistical distribution of the initial value of drain to source resistance
US5756999A (en) Methods and circuitry for correcting temperature-induced errors in microbolometer focal plane array
US6082115A (en) Temperature regulator circuit and precision voltage reference for integrated circuit
US6808307B1 (en) Time-interleaved sampling of voltages for improving accuracy of temperature remote sensors
US5691648A (en) Method and apparatus for measuring sheet resistance and thickness of thin films and substrates
US4298835A (en) Voltage regulator with temperature dependent output
US6937087B2 (en) Temperature sensor and method for detecting trip temperature of a temperature sensor
Wang et al. The temperature characteristics of bipolar transistors fabricated in CMOS technology
US6958643B2 (en) Folded cascode bandgap reference voltage circuit
US6242974B1 (en) Self-calibrating operational amplifier
US7138868B2 (en) Method and circuit for trimming a current source in a package
US6262625B1 (en) Operational amplifier with digital offset calibration
US4911016A (en) Semiconductor strain gauge bridge circuit
US20030213910A1 (en) Microbolometer focal plane array with temperature compensated bias
US6736540B1 (en) Method for synchronized delta-VBE measurement for calculating die temperature
US4123698A (en) Integrated circuit two terminal temperature transducer
US5773967A (en) Voltage reference with testing and self-calibration
US6783274B2 (en) Device for measuring temperature of semiconductor integrated circuit
US7626374B2 (en) Voltage reference circuit
US20080074172A1 (en) Bandgap voltage reference and method for providing same
US20090256623A1 (en) Temprature sensor circuit
US7309157B1 (en) Apparatus and method for calibration of a temperature sensor