US20160320247A1 - System for on-chip temperature measurement in integrated circuits - Google Patents
System for on-chip temperature measurement in integrated circuits Download PDFInfo
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- US20160320247A1 US20160320247A1 US15/210,208 US201615210208A US2016320247A1 US 20160320247 A1 US20160320247 A1 US 20160320247A1 US 201615210208 A US201615210208 A US 201615210208A US 2016320247 A1 US2016320247 A1 US 2016320247A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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- Embodiments of the present invention relate to temperature measurement of integrated circuits.
- embodiments of the present invention relate to an on-chip temperature sensor for integrated circuits.
- Temperature measurement in semiconductor devices such as integrated circuits on silicon substrates is often done by taking advantage of the fundamental relationship between the saturation current of a p-n junction and its temperature. This relationship is described by the Diode Equation shown below:
- n 2 for pure recombination current (low voltage, low current density), and equal to 1 for pure diffusion current (higher voltages).
- n When using a p-n junction as a temperature sensor, it is desirable that n be close to 1.
- high current densities should be avoided to minimize ohmic effects due to series resistances outside of the p-n junction. Ohmic effects can lead to a deviation from the Diode Equation.
- FIG. 1 shows a conventional thermal sensor 100 .
- a current source 105 with a single diode 110 is used, with sequential measurements being taken for current and voltage to obtain two I-V data pairs (I 1 , V 1 ) and (I 2 , V 2 ) for the diode 110 .
- the temperature T is then calculated (neglecting the ⁇ 1) from the Diode Equation as follows:
- the ( ⁇ 1) term in the Diode Equation may be ignored since the resulting error is usually less than 1 part in 100,000 for all current densities of interest.
- embodiments of the present invention provide on-chip temperature sensing through simultaneous electrical measurement of a plurality of diodes.
- the simultaneous measurement of more than one diode eliminates the need for sequential measurements and reduces quantization error.
- two diodes are each coupled to a controlled current source.
- the ratio of the currents provided by the two sources is accurately known.
- the voltage across each of the two diodes is coupled to the input of a differential amplifier.
- the output of the differential amplifier may be coupled to an analog-to-digital converter.
- a first diode is coupled to a first current source by a resistor with a known voltage drop
- a second diode is coupled to an adjustable second current source. The current in the second diode is adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.
- FIG. 2A shows a schematic diagram for a square layout of two diodes in accordance with an embodiment of the present claimed invention.
- FIG. 2B shows a schematic diagram for an approximate circular layout of two diodes in accordance with an embodiment of the present claimed invention.
- FIG. 3A shows a dual-diode thermal sensor, in accordance with an embodiment of the present claimed invention.
- FIG. 3B shows a dual-diode thermal sensor with a sensing series resistor, in accordance with an embodiment of the present claimed invention.
- FIG. 4 shows a current source servo controller, in accordance with an embodiment of the present claimed invention.
- FIG. 2A shows a substrate layout pattern 200 for a first diode and a second diode in accordance with an embodiment of the present invention.
- the first diode comprises an array of discrete diode elements d 1 and the second diode comprises an array of discrete diode elements d 2 .
- Separate interconnects may be fabricated to achieve parallel electrical connection between diodes d 1 , and between diodes d 2 .
- the diode arrays d 1 and d 2 are preferably laid out in an area with a small area moment (e.g. a square or a circle).
- a small area moment e.g. a square or a circle.
- a compact layout on the surface of the integrated circuit minimizes the overall spatially related variations between the diodes. It is also desirable that each of the diode arrays have a common centroid.
- the exemplary pattern of FIG. 2A comprises 128 d 1 diodes and 128 d 2 diodes laid out in a square with a dimension of about 85 microns.
- a sub-array 201 that has a common centroid and compact area, may be used as a tile to build the overall area for the two diodes.
- FIG. 2B shows an approximate circular substrate layout pattern 205 that comprises the sub-array 201 of FIG. 2A . It is desirable that the total diode array have a shape that has two or more axes of symmetry.
- FIG. 3A shows a dual-diode thermal sensor 300 , in accordance with an embodiment of the present invention.
- the sensor 300 comprises a controller 315 for controlling the current output of a first current source 305 and a second current source 310 .
- the first current source 305 is coupled to a first diode 320
- the second current source 310 is coupled to a second diode 325 . Both diode 320 and diode 325 are coupled to ground.
- Each of the current sources 305 and 310 may comprise an array of current source elements, wherein the arrays share a common centroid.
- FIG. 3B shows a dual-diode thermal sensor with a sensing series resistor 335 , in accordance with an embodiment of the present invention.
- the output of Controller 315 controls current source 306 and current source 311 .
- Current source 306 and current source 311 each comprises M and N identical small current source elements (iLSB), respectively.
- iLSB small current source elements
- N is programmable
- M is fixed.
- M may also be programmable.
- the controller 315 controls the current level for each of the iLSB current sources that make up sources 306 and 311 , and may also control the number of iLSB current sources that are active.
- resistor R 1 335 may be made up of a number of identical small resistors (rLSB). Resistor R 1 may be implemented as a programmable resistor by bypass switches (e.g., transistors with low R ds on) for one or more of the rLSB resistors. In this particular embodiment, R 1 is considered as having a fixed value, with R rLSB resistors in series.
- rLSB small resistors
- a high-gain op amp (comparator) 340 is coupled to receive V A and V 2 as inputs.
- V A is the sum of the voltage drops across resistor R 1 and diode D 1 320
- V 2 is the voltage drop across diode D 2 325 .
- thermometer 301 Since the entire thermometer 301 may fabricated on-chip, the negative impact of series resistances may be reduced considerably. The on-chip thermometer may also be tested and adjusted to compensate for observed deviations in temperature readings.
- the temperature determined by the processor may be compared to the known value of the integrated circuit during test.
- a fuse array 350 may be used to program a correction that may be read and applied by the processor. For example an array of four fuses may provide 15 values for correction. In this case, an anticipated error range of +/ ⁇ 3K may thus be divided into 15 corrections that may be applied, ranging from ⁇ 3K to +3K in increments of 0.4K. More fuses may be used to provide a greater range of corrections and/or a finer resolution of correction.
- FIG. 4 shows a current source servo controller 400 that may be used by controller 315 for establishing the current level for each of the iLSB sources.
- An op amp 405 receives a precision reference voltage (e.g., bandgap reference) as one input.
- a second input is taken as the voltage across resistor R 2 415 , providing a servo loop that operates to set the current through R 2 such that the voltage drop across R 2 is equal to V ref .
- resistor R 2 comprises a number of identical small resistors (rLSB), as are used in R 1 .
- resistor R 2 may be implemented as a programmable resistor by bypass switches (e.g., transistors with low R ds on) for one or more of the rLSB resistors.
- R 2 is considered as having a fixed value, comprising S rLSB resistors in series.
- the servo loop current source Hoop 410 is made up of L iLSB current sources in parallel, similar to current sources I 1 and I 2 of FIG. 3B .
- op amp (operational amplifier) 405 drives a current source 406 that is mirrored by each of the iLSB current sources in Iloop, I 1 and I 2 .
- each iLSB current source may be a voltage controlled current source that is driven by the output of op amp 405 .
- the voltage drop across resistor R 1 335 may be represented as:
- V ref V R2
- V ref /LS iLSB*rLSB
- V R1 ( MR/LS )* V ref
- V R1 the voltage across R 1 , that is V R1 , is a known quantity based upon the integer quantities M, R, L and S, and the reference voltage V ref .
- V R1 V 2 ⁇ V 1 , which is one term required for a temperature solution based upon the Diode Equation, with the other term being the current ratio.
- N may be set equal to M by the controller 315 , causing the voltage V A to be greater than V 2 .
- the programmable current source I 2 311 may then be incrementally adjusted by sequentially switching in additional iLSB current sources in turn.
- V 2 will exceed V A , causing the comparator 340 to change state.
- the current ratio I 2 /I 1 corresponding to the diode voltages V 1 and V 2 has been determined as (M+J ⁇ 1 ⁇ 2)/M.
- a specific scheme has been presented for adjusting the current source I 2 and equalizing V A and V 2 , other starting values and modes of adjustment may be used. Also, another value within the comparator crossover range may used for purposes of calculation.
- the transistors switching and current sources
- diodes and resistors of the thermal sensor may vary considerably in size and number.
- centroid applies to the layout of the arrays of iLSB sources that make up each of the current sources Iloop, I 1 , I 2 .
- the centroid also applies to the subset of the current sources that may be switched on at a particular time. Thus, there is both a centroid associated with layout, and a centroid associated with operation.
- the diode current limit was desired to be about 400 microamperes
- 256 iLSB current sources with a nominal current of roughly 2 to 2.5 microamperes may be used.
- the maximum current is related to the minimum temperature that is to be measured accurately. Since high temperature accuracy is generally more important for a circuit than low temperature accuracy, the minimum accurate temperature is selected to be about 308K to 318K. It is desired to use a sufficiently high value for N (e.g., 120 to 160) at temperatures of interest (e.g., 340K to 385K) in order to minimize the impact of quantization error.
- N e.g. 120 to 160
- temperatures of interest e.g., 340K to 385K
- the error in the temperature measurement will be proportional to the error in the (V 2 -V 1 ). Therefore, it is desirable to make (V 2 -V 1 ) as large as possible relative to the resolution of the comparator.
- I 2 and V 2 should be kept from being too large and I 1 and V 1 should be kept from being to small. In this way, deviation from the Diode Equation can be minimized, and the ideality factor n kept close to 1.
- N/M exp((q*dV)/(k*T min ))
- the V ref level may be obtained from a bandgap reference.
- a voltage divider using two high value resistors may be used to divide the bandgap voltage.
- the divider output may use a shunt capacitor to filter high frequency noise.
- the sensor circuit servo may be used to filter low frequency noise.
- Table 1 shows the calculated temperature for different values of N in accordance with the above solution for T.
- the temperature measurement for this interval would be 397.2K, with a quantization error of +/ ⁇ 0.8K.
- the system of the present invention may be used to make sequential measurements using two different current levels.
- temperature measurements may be made in a conventional timeframe, but with increased accuracy.
- the accuracy requirement for temperature measurements on integrated circuits is on the order of +/ ⁇ 3K.
- the quantization may be reduced by using a 9-bit digital-to-analog converter (DAC) instead of the 8-bit DAC (256 iLSB sources) described herein, the quantization error of 0.8K is already low with respect to industry standards for overall accuracy.
- DAC digital-to-analog converter
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Abstract
A thermal sensor providing simultaneous measurement of two diodes. A first diode and a second diode are coupled to a first current source and a second current source, respectively. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes may be coupled to the input of a differential amplifier for determination of temperature. Alternatively, the first diode may be coupled to a first current source by a resistor with a known voltage drop, and the second diode may be coupled to an adjustable second current source. The current in the second diode may be adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.
Description
- This patent is a continuation of and claims the benefit of the commonly owned and co-pending patent application Ser. No. 10/961,311 (attorney docket number TRAN-P378) filed Oct. 7, 2004, entitled “System For On-Chip Temperature Measurement In Integrated Circuits” which is a continuation of patent application Ser. No. 10/411,955 (attorney docket numberTRAN-P085) filed Apr. 10, 2003, entitled “System For On-Chip Temperature Measurement In Integrated Circuits” which are hereby incorporated by this reference.
- Embodiments of the present invention relate to temperature measurement of integrated circuits. In particular, embodiments of the present invention relate to an on-chip temperature sensor for integrated circuits.
- Temperature measurement in semiconductor devices such as integrated circuits on silicon substrates is often done by taking advantage of the fundamental relationship between the saturation current of a p-n junction and its temperature. This relationship is described by the Diode Equation shown below:
-
I=Is*[exp(qV/nkT)−1] - where,
-
- Is=saturation current
- q=electron charge
- V=p-n junction voltage
- n=ideality factor (between 1 and 2)
- k=Boltzmann's constant
- T=absolute temperature (K)
- The ideality factor n is equal to 2 for pure recombination current (low voltage, low current density), and equal to 1 for pure diffusion current (higher voltages). When using a p-n junction as a temperature sensor, it is desirable that n be close to 1. However, high current densities should be avoided to minimize ohmic effects due to series resistances outside of the p-n junction. Ohmic effects can lead to a deviation from the Diode Equation.
-
FIG. 1 shows a conventionalthermal sensor 100. Acurrent source 105 with asingle diode 110 is used, with sequential measurements being taken for current and voltage to obtain two I-V data pairs (I1, V1) and (I2, V2) for thediode 110. The temperature T is then calculated (neglecting the −1) from the Diode Equation as follows: -
T=(q/nk)*(V 2-V 1)/(In(I 2/I1)) - The (−1) term in the Diode Equation may be ignored since the resulting error is usually less than 1 part in 100,000 for all current densities of interest.
- In conventional temperature measurements made using a single diode, there are a number of error sources that reduce the accuracy and reliability of the measurements. Also, the sequential measurements reduce the frequency with which measurements can be made.
- In the measurement of the two voltages, the error associated with each individual measurement contributes to the total error for the term (V2-V1). Since this term is normally quite small (about one tenth of V2 or V1), the accuracy of the voltage measurements is critical. Also, voltage measurements usually involve an analog-to-digital conversion, with an associated quantization error that is counted twice.
- Another source of error are leakage currents. For example,
shunt resistance 120 may produce a deviation from the I-V characteristic expressed by the Diode Equation. Also, since the measurements are sequential, short term changes in the circuit state can affect the measurements. As previously described, aseries resistance 115 may also introduce error. - Thus, a need exists for a more accurate temperature sensor for integrated circuits. There is also a need for a temperature sensor that eliminates the problems associated with sequential electrical measurements, as well as providing reduced errors, reduced noise, and an increased measurement frequency.
- Accordingly, embodiments of the present invention provide on-chip temperature sensing through simultaneous electrical measurement of a plurality of diodes. The simultaneous measurement of more than one diode eliminates the need for sequential measurements and reduces quantization error.
- In an embodiment of the present invention, two diodes are each coupled to a controlled current source. The ratio of the currents provided by the two sources is accurately known. The voltage across each of the two diodes is coupled to the input of a differential amplifier. The output of the differential amplifier may be coupled to an analog-to-digital converter.
- In another embodiment, a first diode is coupled to a first current source by a resistor with a known voltage drop, and a second diode is coupled to an adjustable second current source. The current in the second diode is adjusted until the voltage across the second diode is equal to the sum of voltage drop across the first diode and the known voltage drop across the resistor. Under the established conditions, the Diode Equation may be used to calculate a temperature.
- Although the above embodiments describe the use of two diodes in parallel, three or more diodes may be used in parallel, with or without coupling resistors. The additional measurements may be used to further reduce error.
- These and other objects and advantages of the present invention will no doubt become obvious to those of ordinary skill in the art after having read the following detailed description of the preferred embodiments which are illustrated in the various drawing figures.
- The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. The drawings referred to in this description should not be understood as being drawn to scale except if specifically noted.
- Prior Art
FIG. 1 shows a thermal sensor with a single diode. -
FIG. 2A shows a schematic diagram for a square layout of two diodes in accordance with an embodiment of the present claimed invention. -
FIG. 2B shows a schematic diagram for an approximate circular layout of two diodes in accordance with an embodiment of the present claimed invention. -
FIG. 3A shows a dual-diode thermal sensor, in accordance with an embodiment of the present claimed invention. -
FIG. 3B shows a dual-diode thermal sensor with a sensing series resistor, in accordance with an embodiment of the present claimed invention. -
FIG. 4 shows a current source servo controller, in accordance with an embodiment of the present claimed invention. - In the following detailed description of the present invention, a system for on-chip temperature measurement in an integrated circuit, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be obvious to one skilled in the art that the present invention may be practiced without these specific details. In other instances well known methods involving photolithography, ion implantation, deposition and etch, etc., and well known circuit components such as current sources and amplifiers, etc., have not been described in detail so as not to unnecessarily obscure aspects of the present invention.
-
FIG. 2A shows asubstrate layout pattern 200 for a first diode and a second diode in accordance with an embodiment of the present invention. The first diode comprises an array of discrete diode elements d1 and the second diode comprises an array of discrete diode elements d2. Separate interconnects may be fabricated to achieve parallel electrical connection between diodes d1, and between diodes d2. - In general, the diode arrays d1 and d2 are preferably laid out in an area with a small area moment (e.g. a square or a circle). A compact layout on the surface of the integrated circuit minimizes the overall spatially related variations between the diodes. It is also desirable that each of the diode arrays have a common centroid.
- In a preferred embodiment, the exemplary pattern of
FIG. 2A comprises 128 d1 diodes and 128 d2 diodes laid out in a square with a dimension of about 85 microns. - In achieving the desired layout, a sub-array 201 that has a common centroid and compact area, may be used as a tile to build the overall area for the two diodes.
-
FIG. 2B shows an approximate circularsubstrate layout pattern 205 that comprises the sub-array 201 ofFIG. 2A . It is desirable that the total diode array have a shape that has two or more axes of symmetry. -
FIG. 3A shows a dual-diodethermal sensor 300, in accordance with an embodiment of the present invention. Thesensor 300 comprises acontroller 315 for controlling the current output of a firstcurrent source 305 and a secondcurrent source 310. The firstcurrent source 305 is coupled to afirst diode 320, and the secondcurrent source 310 is coupled to asecond diode 325. Bothdiode 320 anddiode 325 are coupled to ground. - The output ratio of
current source 310 tocurrent source 305 is fixed (I2=K*I1) within the range used for measurement, thereby eliminating the variable (I2/I1) term from the Diode Equation. Each of thecurrent sources - The voltage drop across each of the
diodes -
FIG. 3B shows a dual-diode thermal sensor with asensing series resistor 335, in accordance with an embodiment of the present invention. The output ofController 315 controlscurrent source 306 andcurrent source 311.Current source 306 andcurrent source 311 each comprises M and N identical small current source elements (iLSB), respectively. In this particular embodiment N is programmable, whereas M is fixed. However, in other embodiments, M may also be programmable. - The
controller 315 controls the current level for each of the iLSB current sources that make upsources - Similarly,
resistor R1 335 may be made up of a number of identical small resistors (rLSB). Resistor R1 may be implemented as a programmable resistor by bypass switches (e.g., transistors with low Rds on) for one or more of the rLSB resistors. In this particular embodiment, R1 is considered as having a fixed value, with R rLSB resistors in series. - A high-gain op amp (comparator) 340 is coupled to receive VA and V2 as inputs. VA is the sum of the voltage drops across resistor R1 and
diode D1 320, and V2 is the voltage drop acrossdiode D2 325. The output of the comparator is coupled to aprocessor 345 that determines the diode temperature from the value of N established bycontroller 315, and a set of circuit parameters. N may be adjusted by thecontroller 315 until thecomparator 340 switches, thus establishing the point at which VA=V2. - Since the
entire thermometer 301 may fabricated on-chip, the negative impact of series resistances may be reduced considerably. The on-chip thermometer may also be tested and adjusted to compensate for observed deviations in temperature readings. - In testing, the temperature determined by the processor may be compared to the known value of the integrated circuit during test. A
fuse array 350 may be used to program a correction that may be read and applied by the processor. For example an array of four fuses may provide 15 values for correction. In this case, an anticipated error range of +/−3K may thus be divided into 15 corrections that may be applied, ranging from −3K to +3K in increments of 0.4K. More fuses may be used to provide a greater range of corrections and/or a finer resolution of correction. -
FIG. 4 shows a currentsource servo controller 400 that may be used bycontroller 315 for establishing the current level for each of the iLSB sources. Anop amp 405 receives a precision reference voltage (e.g., bandgap reference) as one input. A second input is taken as the voltage acrossresistor R2 415, providing a servo loop that operates to set the current through R2 such that the voltage drop across R2 is equal to Vref. - In one embodiment, resistor R2 comprises a number of identical small resistors (rLSB), as are used in R1. In one embodiment, resistor R2 may be implemented as a programmable resistor by bypass switches (e.g., transistors with low Rds on) for one or more of the rLSB resistors. In this particular embodiment, R2 is considered as having a fixed value, comprising S rLSB resistors in series.
- The servo loop
current source Hoop 410 is made up of L iLSB current sources in parallel, similar to current sources I1 and I2 ofFIG. 3B . In the example ofFIG. 4 , op amp (operational amplifier) 405 drives acurrent source 406 that is mirrored by each of the iLSB current sources in Iloop, I1 and I2. Alternatively, each iLSB current source may be a voltage controlled current source that is driven by the output ofop amp 405. - Taking into account the configuration of the controller of
FIG. 4 and the sensor circuit ofFIG. 3B , the voltage drop acrossresistor R1 335 may be represented as: -
V R1 =I1*R1=M*iLSB*R*rLSB=MR*(iLSB*rLSB) - also,
-
VR2=Iloop*R2=L*iLSB*S*rLSB, -
Vref=VR2 -
Vref/LS=iLSB*rLSB -
V R1=(MR/LS)*V ref - It is appreciated that the voltage across R1, that is VR1, is a known quantity based upon the integer quantities M, R, L and S, and the reference voltage Vref. With this in mind, the operation of the system of
FIG. 3B is described. - With reference to
FIG. 3B , it is seen that since VA=VR1+V1 and VA=V2, VR1=V2−V1, which is one term required for a temperature solution based upon the Diode Equation, with the other term being the current ratio. - Referring again to
FIG. 3B , N may be set equal to M by thecontroller 315, causing the voltage VA to be greater than V2. The programmablecurrent source I2 311 may then be incrementally adjusted by sequentially switching in additional iLSB current sources in turn. Alternatively, a binomial search or other algorithm may be used to find the value of N at which VA=V2. - At some point, when a number J of additional iLSB sources have been switched in, V2 will exceed VA, causing the
comparator 340 to change state. Although the incremental nature of the current increases prevents determining the exact current at which VA=V2, a range can be established and the range midpoint used for purposes of calculation. In this case, the current may be taken as (M+J−½)iLSB. - Thus, the current ratio I2/I1 corresponding to the diode voltages V1 and V2 has been determined as (M+J−½)/M. Although a specific scheme has been presented for adjusting the current source I2 and equalizing VA and V2, other starting values and modes of adjustment may be used. Also, another value within the comparator crossover range may used for purposes of calculation.
- There are many factors to be considered in the selection of the component sizes and the values of the integers L, M, R, and S. Depending upon the process used for integrated circuit fabrication and the design of the circuit, the transistors (switches and current sources), diodes and resistors of the thermal sensor may vary considerably in size and number.
- It is desirable to provide a common centroid for each of the current sources Iloop, I1, and I2. The centroid applies to the layout of the arrays of iLSB sources that make up each of the current sources Iloop, I1, I2. The centroid also applies to the subset of the current sources that may be switched on at a particular time. Thus, there is both a centroid associated with layout, and a centroid associated with operation.
- For example, in a circuit for which the diode current limit was desired to be about 400 microamperes, 256 iLSB current sources with a nominal current of roughly 2 to 2.5 microamperes may be used. The maximum current is related to the minimum temperature that is to be measured accurately. Since high temperature accuracy is generally more important for a circuit than low temperature accuracy, the minimum accurate temperature is selected to be about 308K to 318K. It is desired to use a sufficiently high value for N (e.g., 120 to 160) at temperatures of interest (e.g., 340K to 385K) in order to minimize the impact of quantization error.
- The error in the temperature measurement will be proportional to the error in the (V2-V1). Therefore, it is desirable to make (V2-V1) as large as possible relative to the resolution of the comparator. On the other hand, I2 and V2 should be kept from being too large and I1 and V1 should be kept from being to small. In this way, deviation from the Diode Equation can be minimized, and the ideality factor n kept close to 1. In view of these considerations dV=(V2-V1) may be targeted to be about 0.085 volts.
- It is desired that the current ratio N/M be about 18 for the lowest temperature of interest: N/M=exp((q*dV)/(k*Tmin)), where N=160, corresponding to the Tmin of interest. Using dV=0.085 V, Tmin=340K, we get N/M=18.2, M=160/18.2=8.8, giving 9 for the fixed integer value of M.
- The Vref level may be obtained from a bandgap reference. In order to reduce noise in reference signal, a voltage divider using two high value resistors may be used to divide the bandgap voltage. For example, two matched resistors may be used to divide a bandgap voltage of 1.175 volts in half to provide a Vref=0.5875 volts. The divider output may use a shunt capacitor to filter high frequency noise. The sensor circuit servo may be used to filter low frequency noise.
- The relationships for S, L and R may now be examined. From above, SL=MR*(Vref/dV)=R1*62.2. To avoid having to make S and L too large, it is preferred that R be set close to 1. Using S=L=8, we get even numbers that help the centroiding for the resistors.
- The calculated dV is then: dV=(MR/SL)*vRef=0.0826 V. Finally, a nominal value for rLSB is determined from rLSB=dV/(M*iLSB); using a nominal value of 2.0 microamperes for iLSB, rLSB=4.6 kohm. Thus, the solution for T from the Diode Equation becomes:
-
-
TABLE 1 TEMPERATURE N*iLSB (K) N (microamperes) 398.0 100 218 396.4 101 220 370.0 120 258 368.8 121 260 333.7 159 336 333.0 160 338 309.0 200 418 308.5 201 420 - Table 1 shows the calculated temperature for different values of N in accordance with the above solution for T. The step from N=100 to N=101 corresponds to a change in temperature from 398K to 396.4K, or a difference of 1.6K. In keeping with the practice of taking the midpoint of the interval in which the comparator changes state, the temperature measurement for this interval would be 397.2K, with a quantization error of +/−0.8K.
- Although the quantization error for the interval between N=200 and N=201 is smaller than that for the interval for N=100 to N=101, it should be noted that the diode current is over 400 microamperes, and ohmic effects may affect the overall accuracy.
- Although the simultaneous use of two diodes obviates the need for sequential measurements, the system of the present invention may be used to make sequential measurements using two different current levels. Thus, temperature measurements may be made in a conventional timeframe, but with increased accuracy.
- In general, the accuracy requirement for temperature measurements on integrated circuits is on the order of +/−3K. Although the quantization may be reduced by using a 9-bit digital-to-analog converter (DAC) instead of the 8-bit DAC (256 iLSB sources) described herein, the quantization error of 0.8K is already low with respect to industry standards for overall accuracy.
- The foregoing descriptions of specific embodiments of the present invention have been presented for purposes of illustration and description. They are not intended to be exhaustive or to limit the invention to the precise forms disclosed, and obviously many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and its practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the Claims appended hereto and their equivalents.
Claims (7)
1. A controller for an on-chip thermometer comprising:
an operational amplifier having a first input coupled to a voltage reference, a second input and an output for coupling to said thermometer;
a current source coupled to said output of said operational amplifier and to first and second diodes, wherein said current source comprises an array of current source elements; and
a resistor having a first terminal and a second terminal, wherein said first terminal is coupled to said current source and to said second input of said operational amplifier;
wherein said controller is operable to cause a first current in said first diode to be fixed while varying a second current in said second diode responsive to a feedback signal to alter the ratio of said first and second currents.
2. A current source servo circuit for establishing the current level for current sources used in a system for measuring temperature in an integrated circuit, said current source servo circuit comprising:
a single output coupled to a fixed current source and also a variable current source; and
a voltage source coupled to an input of an operational amplifier; and
a voltage across a resistor coupled to the other input of said operational amplifier.
3. A current source servo circuit according to claim 2 wherein said voltage source is a band gap reference.
4. A current source servo circuit according to claim 2 wherein said resistor is related by construction to a resistor in said system for measuring temperature in an integrated circuit.
5. A current source servo circuit according to claim 5 and further for establishing a known voltage in said system for measuring temperature in an integrated circuit.
6. A servo circuit comprising:
an output coupled to first and second thermal sensing diodes that are coupled to a comparator; and
an input coupled to said comparator and receiving a feedback signal therefrom;
wherein said servo circuit is operable to:
cause a first fixed current in said first diode to establish a first voltage at a first input of said comparator while varying a second current through said second diode to establish a second voltage responsive to said feedback signal;
cause said first and second voltages to be equal responsive to said feedback signal; and
7. A servo circuit as recited in claim 6 , wherein said servo circuit is further operable to establish a known voltage, wherein said first voltage comprises said known voltage and a voltage across said first diode.
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US16/537,200 US20190360872A1 (en) | 2003-04-10 | 2019-08-09 | System for on-chip temperature measurement in integrated circuits |
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US52452606A | 2006-09-19 | 2006-09-19 | |
US15/210,208 US20160320247A1 (en) | 2003-04-10 | 2016-07-14 | System for on-chip temperature measurement in integrated circuits |
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US13/243,976 Expired - Fee Related US9222843B2 (en) | 2003-04-10 | 2011-09-23 | System for on-chip temperature measurement in integrated circuits |
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US16/011,324 Abandoned US20180356295A1 (en) | 2003-04-10 | 2018-06-18 | System for on-chip temperature measurement in integrated circuits |
US16/537,200 Abandoned US20190360872A1 (en) | 2003-04-10 | 2019-08-09 | System for on-chip temperature measurement in integrated circuits |
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US10/961,311 Expired - Lifetime US7108420B1 (en) | 2003-04-10 | 2004-10-07 | System for on-chip temperature measurement in integrated circuits |
US13/243,976 Expired - Fee Related US9222843B2 (en) | 2003-04-10 | 2011-09-23 | System for on-chip temperature measurement in integrated circuits |
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US16/537,200 Abandoned US20190360872A1 (en) | 2003-04-10 | 2019-08-09 | System for on-chip temperature measurement in integrated circuits |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190086272A1 (en) * | 2017-09-17 | 2019-03-21 | Qualcomm Incorporated | Diode-based temperature sensor |
US11133040B2 (en) | 2019-09-16 | 2021-09-28 | Samsung Electronics Co., Ltd. | Semiconductor memory device and a memory system having the same |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7828479B1 (en) * | 2003-04-08 | 2010-11-09 | National Semiconductor Corporation | Three-terminal dual-diode system for fully differential remote temperature sensors |
US7369816B2 (en) * | 2004-08-06 | 2008-05-06 | Broadcom Corporation | Highly accurate temperature sensor employing mixed-signal components |
US7212064B1 (en) * | 2005-02-11 | 2007-05-01 | Transmeta Corporation | Methods and systems for measuring temperature using digital signals |
US20060203883A1 (en) * | 2005-03-08 | 2006-09-14 | Intel Corporation | Temperature sensing |
US20070146293A1 (en) * | 2005-12-27 | 2007-06-28 | Hon-Yuan Leo | LCOS integrated circuit and electronic device using the same |
US7484886B2 (en) * | 2006-05-03 | 2009-02-03 | International Business Machines Corporation | Bolometric on-chip temperature sensor |
US7992117B2 (en) * | 2006-06-20 | 2011-08-02 | Adtran, Inc. | System and method for designing a common centroid layout for an integrated circuit |
US8096707B2 (en) * | 2008-06-30 | 2012-01-17 | Intel Corporation | Thermal sensor device |
US7772920B1 (en) * | 2009-05-29 | 2010-08-10 | Linear Technology Corporation | Low thermal hysteresis bandgap voltage reference |
EP2336741B1 (en) * | 2009-12-18 | 2016-09-07 | Nxp B.V. | Self-calibration circuit and method for junction temperature estimation |
US9299692B2 (en) | 2014-02-07 | 2016-03-29 | Analog Devices Global | Layout of composite circuit elements |
US9396849B1 (en) | 2014-03-10 | 2016-07-19 | Vishay Dale Electronics Llc | Resistor and method of manufacture |
US10120405B2 (en) * | 2014-04-04 | 2018-11-06 | National Instruments Corporation | Single-junction voltage reference |
US9310823B2 (en) * | 2014-04-28 | 2016-04-12 | Texas Instruments Incorporated | Voltage reference |
CN105987762B (en) * | 2015-03-05 | 2018-09-28 | 上海炬力集成电路设计有限公司 | A kind of method of built-in temperature sensor and temperature |
US9519298B2 (en) * | 2015-03-20 | 2016-12-13 | Nxp B.V. | Multi-junction semiconductor circuit and method |
US9470583B1 (en) | 2015-12-29 | 2016-10-18 | International Business Machines Corporation | Calibration-free temperature measurement |
CN106289560A (en) * | 2016-08-01 | 2017-01-04 | 湖南省耐为数控技术有限公司 | A kind of circuit for motor temperature Precision measurement |
GB2555527B (en) * | 2016-11-01 | 2019-06-05 | Evonetix Ltd | Current Control |
CN106482850B (en) * | 2016-11-25 | 2019-09-17 | 北京兆芯电子科技有限公司 | Temperature-detecting device and temperature checking method |
CN108731833A (en) * | 2018-04-19 | 2018-11-02 | 上海申矽凌微电子科技有限公司 | A kind of distal end CMOS temperature measuring circuits |
CN108760060A (en) * | 2018-04-19 | 2018-11-06 | 上海申矽凌微电子科技有限公司 | A kind of resistance for distal end CMOS temperature measuring circuits eliminates circuit |
US20220163401A1 (en) * | 2019-03-08 | 2022-05-26 | Nokia Technologies Oy | Temperature detection |
CN111765982A (en) * | 2020-06-16 | 2020-10-13 | 中国电子科技集团公司第四十四研究所 | High-precision temperature measurement control circuit |
KR20220027815A (en) * | 2020-08-25 | 2022-03-08 | 선전 구딕스 테크놀로지 컴퍼니, 리미티드 | Temperature measuring circuit, temperature and optical measuring circuit, temperature measuring method and temperature and optical measuring method |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4480312A (en) * | 1981-08-14 | 1984-10-30 | Wingate Steven L | Temperature sensor/controller system |
US4781065A (en) * | 1984-05-09 | 1988-11-01 | Cole Martin T | Solid-state anemometers and temperature gauges |
US5063307A (en) * | 1990-09-20 | 1991-11-05 | Ixys Corporation | Insulated gate transistor devices with temperature and current sensor |
US5519354A (en) * | 1995-06-05 | 1996-05-21 | Analog Devices, Inc. | Integrated circuit temperature sensor with a programmable offset |
US20020173724A1 (en) * | 2001-05-18 | 2002-11-21 | Dorando Dale Gene | Signal conditioning device for interfacing intravascular sensors having varying operational characteristics to a physiology monitor |
US6631503B2 (en) * | 2001-01-05 | 2003-10-07 | Ibm Corporation | Temperature programmable timing delay system |
US6876250B2 (en) * | 2000-07-07 | 2005-04-05 | International Business Machines Corporation | Low-power band-gap reference and temperature sensor circuit |
US7279954B2 (en) * | 2001-03-27 | 2007-10-09 | Nissan Motor Co., Ltd. | On-chip temperature detection device |
US7828479B1 (en) * | 2003-04-08 | 2010-11-09 | National Semiconductor Corporation | Three-terminal dual-diode system for fully differential remote temperature sensors |
Family Cites Families (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3074642A (en) | 1960-08-26 | 1963-01-22 | Electronic Associates | Analog accumulator |
US3471759A (en) | 1966-12-23 | 1969-10-07 | Gen Electric | Pulse width modulation servo system including a unique transformerless demodulator |
US3812717A (en) * | 1972-04-03 | 1974-05-28 | Bell Telephone Labor Inc | Semiconductor diode thermometry |
US4004462A (en) * | 1974-06-07 | 1977-01-25 | National Semiconductor Corporation | Temperature transducer |
US4071813A (en) * | 1974-09-23 | 1978-01-31 | National Semiconductor Corporation | Temperature sensor |
JPS5913052B2 (en) | 1975-07-25 | 1984-03-27 | 日本電気株式会社 | Reference voltage source circuit |
US4224537A (en) * | 1978-11-16 | 1980-09-23 | Motorola, Inc. | Modified semiconductor temperature sensor |
US4243898A (en) * | 1978-11-16 | 1981-01-06 | Motorola, Inc. | Semiconductor temperature sensor |
JPS5573114A (en) | 1978-11-28 | 1980-06-02 | Nippon Gakki Seizo Kk | Output offset control circuit for full step direct-coupled amplifier |
US4201088A (en) * | 1978-12-04 | 1980-05-06 | Yellow Springs Instrument Company, Inc. | Differential measuring system |
US4280091A (en) * | 1979-10-29 | 1981-07-21 | Tektronix, Inc. | Variable current source having a programmable current-steering network |
US4317054A (en) | 1980-02-07 | 1982-02-23 | Mostek Corporation | Bandgap voltage reference employing sub-surface current using a standard CMOS process |
US4305724A (en) | 1980-08-04 | 1981-12-15 | Delphian Partners | Combustible gas detection system |
US4319318A (en) | 1980-09-15 | 1982-03-09 | California Institute Of Technology | Voltage reapplication rate control for commutation of thyristors |
JPS57164609A (en) * | 1981-04-02 | 1982-10-09 | Sony Corp | Level detecting circuit |
DE3129476A1 (en) * | 1981-07-25 | 1983-02-10 | Robert Bosch Gmbh, 7000 Stuttgart | Circuit arrangement for the analog/digital conversion of the value of a resistance |
US4538199A (en) | 1983-07-14 | 1985-08-27 | Eaton Corporation | Electrothermal wire responsive miniature precision current sensor |
US4608530A (en) * | 1984-11-09 | 1986-08-26 | Harris Corporation | Programmable current mirror |
US4808908A (en) * | 1988-02-16 | 1989-02-28 | Analog Devices, Inc. | Curvature correction of bipolar bandgap references |
US4981369A (en) * | 1988-10-20 | 1991-01-01 | Murata Mfg. Co., Ltd. | Frost and dew sensor |
JPH0757116B2 (en) | 1988-11-16 | 1995-06-14 | ローム株式会社 | Motor drive circuit |
FR2650669B1 (en) | 1989-08-04 | 1993-10-29 | Equipement Menager Cie Europ | TEMPERATURE MEASURING DEVICE FOR INDUCTION COOKING APPARATUS AND APPARATUS COMPRISING SUCH A DEVICE |
US5023543A (en) | 1989-09-15 | 1991-06-11 | Gennum Corporation | Temperature compensated voltage regulator and reference circuit |
JP2749925B2 (en) * | 1990-01-09 | 1998-05-13 | 株式会社リコー | IC temperature sensor |
US5027053A (en) * | 1990-08-29 | 1991-06-25 | Micron Technology, Inc. | Low power VCC /2 generator |
GB9116245D0 (en) | 1991-07-27 | 1991-09-11 | Renishaw Metrology Ltd | Sensing circuit for position-sensing probe |
US5220207A (en) | 1991-09-03 | 1993-06-15 | Allegro Microsystems, Inc. | Load current monitor for MOS driver |
DE4237122C2 (en) * | 1992-11-03 | 1996-12-12 | Texas Instruments Deutschland | Circuit arrangement for monitoring the drain current of a metal oxide semiconductor field effect transistor |
US5422832A (en) | 1993-12-22 | 1995-06-06 | Advanced Micro Devices | Variable thermal sensor |
JP3275547B2 (en) | 1994-07-01 | 2002-04-15 | 株式会社デンソー | Voltage-frequency conversion circuit |
US5639163A (en) * | 1994-11-14 | 1997-06-17 | International Business Machines Corporation | On-chip temperature sensing system |
US5574678A (en) * | 1995-03-01 | 1996-11-12 | Lattice Semiconductor Corp. | Continuous time programmable analog block architecture |
US5623232A (en) * | 1995-09-26 | 1997-04-22 | Burr-Brown Corporation | Topography for integrated circuit operational amplifier having low impedance input for current feedback |
US5994937A (en) * | 1996-11-06 | 1999-11-30 | International Business Machines Corporation | Temperature and power supply adjusted address transition detector |
US6075407A (en) * | 1997-02-28 | 2000-06-13 | Intel Corporation | Low power digital CMOS compatible bandgap reference |
US6055489A (en) * | 1997-04-15 | 2000-04-25 | Intel Corporation | Temperature measurement and compensation scheme |
SG80573A1 (en) * | 1997-06-02 | 2001-05-22 | Motorola Inc | Integrated temperature sensor |
JPH10332494A (en) * | 1997-06-03 | 1998-12-18 | Oki Data:Kk | Temperature detection circuit, driver and printer |
US5867012A (en) | 1997-08-14 | 1999-02-02 | Analog Devices, Inc. | Switching bandgap reference circuit with compounded ΔV.sub.βΕ |
US6052020A (en) * | 1997-09-10 | 2000-04-18 | Intel Corporation | Low supply voltage sub-bandgap reference |
DE19743346C2 (en) * | 1997-09-30 | 2000-09-21 | Siemens Ag | Circuit arrangement for clocked current regulation of inductive loads |
US6149299A (en) * | 1997-12-11 | 2000-11-21 | National Semiconductor Corporation | Direct temperature sensing of a semiconductor device semiconductor device |
US6140860A (en) * | 1997-12-31 | 2000-10-31 | Intel Corporation | Thermal sensing circuit |
US6242974B1 (en) * | 1998-03-25 | 2001-06-05 | Micrel,Inc | Self-calibrating operational amplifier |
US6008685A (en) * | 1998-03-25 | 1999-12-28 | Mosaic Design Labs, Inc. | Solid state temperature measurement |
FR2781301B1 (en) | 1998-07-20 | 2000-09-08 | Alstom Technology | CURRENT LOOP OF THE TYPE 4-20 MILLIAMPERES OR 0-20 MILLIAMPERES COMPRISING A TEST CIRCUIT IN PARALLEL |
US6111397A (en) * | 1998-07-22 | 2000-08-29 | Lsi Logic Corporation | Temperature-compensated reference voltage generator and method therefor |
JP3408161B2 (en) * | 1998-08-27 | 2003-05-19 | キヤノン株式会社 | Temperature detection circuit and photoelectric conversion circuit |
JP3319406B2 (en) * | 1998-09-18 | 2002-09-03 | 日本電気株式会社 | Comparison amplification detection circuit |
US6097239A (en) * | 1999-02-10 | 2000-08-01 | Analog Devices, Inc. | Decoupled switched current temperature circuit with compounded ΔV be |
SG86389A1 (en) * | 1999-04-21 | 2002-02-19 | Em Microelectronic Marin Sa | Temperature level detection circuit |
US6215353B1 (en) * | 1999-05-24 | 2001-04-10 | Pairgain Technologies, Inc. | Stable voltage reference circuit |
CA2282862A1 (en) * | 1999-09-17 | 2001-03-17 | Northern Telecom Limited | Signal-level compensation for communications circuits |
US6275098B1 (en) * | 1999-10-01 | 2001-08-14 | Lsi Logic Corporation | Digitally calibrated bandgap reference |
IT1311441B1 (en) * | 1999-11-16 | 2002-03-12 | St Microelectronics Srl | PROGRAMMABLE VOLTAGE GENERATOR, IN PARTICULAR FOR THE PROGRAMMING OF MULTI-LEVEL NON-VOLATILE MEMORY CELLS. |
US6567763B1 (en) * | 1999-12-30 | 2003-05-20 | Intel Corporation | Analog temperature measurement apparatus and method |
KR100697726B1 (en) * | 2000-02-10 | 2007-03-21 | 페어차일드코리아반도체 주식회사 | A lamp system equipped with an electric ballast |
US6556067B2 (en) * | 2000-06-13 | 2003-04-29 | Linfinity Microelectronics | Charge pump regulator with load current control |
JP2002048651A (en) * | 2000-08-04 | 2002-02-15 | Nippon Precision Circuits Inc | Semiconductor temperature detecting method and its circuit |
US6724324B1 (en) | 2000-08-21 | 2004-04-20 | Delphi Technologies, Inc. | Capacitive proximity sensor |
JP2002150591A (en) | 2000-11-10 | 2002-05-24 | Pioneer Electronic Corp | Recorder by optical recording medium and its recording method |
JP2002150590A (en) | 2000-11-10 | 2002-05-24 | Pioneer Electronic Corp | Recording device and method with optical recording medium |
US6433624B1 (en) * | 2000-11-30 | 2002-08-13 | Intel Corporation | Threshold voltage generation circuit |
US6304109B1 (en) | 2000-12-05 | 2001-10-16 | Analog Devices, Inc. | High gain CMOS amplifier |
DE10106388C2 (en) | 2001-02-12 | 2002-12-12 | Infineon Technologies Ag | Circuit arrangement for providing exponential predistortion for an adjustable amplifier |
JP2002270768A (en) * | 2001-03-08 | 2002-09-20 | Nec Corp | Cmos reference voltage circuit |
US6554469B1 (en) * | 2001-04-17 | 2003-04-29 | Analog Devices, Inc. | Four current transistor temperature sensor and method |
US6628558B2 (en) | 2001-06-20 | 2003-09-30 | Cypress Semiconductor Corp. | Proportional to temperature voltage generator |
DE10133736A1 (en) | 2001-07-11 | 2003-01-23 | Philips Corp Intellectual Pty | Arrangement for measuring the temperature of an electronic circuit |
US6679628B2 (en) * | 2001-08-14 | 2004-01-20 | Schneider Automation Inc. | Solid state temperature measuring device and method |
US6563371B2 (en) * | 2001-08-24 | 2003-05-13 | Intel Corporation | Current bandgap voltage reference circuits and related methods |
US6489835B1 (en) * | 2001-08-28 | 2002-12-03 | Lattice Semiconductor Corporation | Low voltage bandgap reference circuit |
US6717449B2 (en) * | 2001-10-23 | 2004-04-06 | Olympus Corporation | Variable resistance circuit and application circuits using the variable resistance circuit |
FR2832519B1 (en) | 2001-11-19 | 2004-02-20 | St Microelectronics Sa | CURRENT MIRROR CIRCUIT OPERATING AT HIGH FREQUENCIES |
US7052180B2 (en) | 2002-01-04 | 2006-05-30 | Kelvin Shih | LED junction temperature tester |
DE10204487B4 (en) | 2002-01-30 | 2004-03-04 | Infineon Technologies Ag | temperature sensor |
US6930537B1 (en) * | 2002-02-01 | 2005-08-16 | National Semiconductor Corporation | Band-gap reference circuit with averaged current mirror offsets and method |
US6749335B2 (en) | 2002-05-17 | 2004-06-15 | Sun Microsystems, Inc. | Adjustment and calibration system for post-fabrication treatment of on-chip temperature sensor |
KR100475736B1 (en) * | 2002-08-09 | 2005-03-10 | 삼성전자주식회사 | Temperature sensor having shifting temperature detection circuit for use in high speed test and method for detecting shifting temperature |
JP2004088948A (en) | 2002-08-28 | 2004-03-18 | Yaskawa Electric Corp | Switching method for transistor in ac servo controller |
FR2844066A1 (en) | 2002-08-28 | 2004-03-05 | St Microelectronics Sa | Control of quiescent currents in a direct frequency converter used in mobile telephones, uses closed loop regulation of common-mode quiescent current so it tracks reference current |
JP2004146576A (en) * | 2002-10-24 | 2004-05-20 | Renesas Technology Corp | Semiconductor temperature measuring circuit |
US7104684B2 (en) | 2002-11-29 | 2006-09-12 | Sigmatel, Inc. | On-chip digital thermometer to sense and measure device temperatures |
US6736540B1 (en) | 2003-02-26 | 2004-05-18 | National Semiconductor Corporation | Method for synchronized delta-VBE measurement for calculating die temperature |
US20040252749A1 (en) | 2003-06-13 | 2004-12-16 | Randazzo Christoph Stefan | Apparatus for performing a temperature measurement function and devices based thereon |
US20040263213A1 (en) * | 2003-06-26 | 2004-12-30 | Oliver Kiehl | Current source |
US7118274B2 (en) * | 2004-05-20 | 2006-10-10 | International Business Machines Corporation | Method and reference circuit for bias current switching for implementing an integrated temperature sensor |
US7140767B2 (en) | 2004-11-02 | 2006-11-28 | Standard Microsystems Corporation | Programmable ideality factor compensation in temperature sensors |
JP5028748B2 (en) * | 2005-04-15 | 2012-09-19 | 富士電機株式会社 | Temperature measurement device for power semiconductor devices |
DE102005045635B4 (en) * | 2005-09-23 | 2007-06-14 | Austriamicrosystems Ag | Arrangement and method for providing a temperature-dependent signal |
JP4868918B2 (en) | 2006-04-05 | 2012-02-01 | 株式会社東芝 | Reference voltage generator |
US7887235B2 (en) | 2006-08-30 | 2011-02-15 | Freescale Semiconductor, Inc. | Multiple sensor thermal management for electronic devices |
KR100771884B1 (en) | 2006-09-11 | 2007-11-01 | 삼성전자주식회사 | Temperature sensing circuit with non-linearity cancellation characteristics |
US7576939B2 (en) | 2007-11-15 | 2009-08-18 | Seagate Technology Llc | Discontinuous mode back EMF measurement |
JP5189882B2 (en) * | 2008-04-11 | 2013-04-24 | ルネサスエレクトロニクス株式会社 | Temperature sensor circuit |
US7841770B2 (en) | 2008-05-29 | 2010-11-30 | Hycon Technology Corp. | Temperature measuring system and measuring method using the same |
US7724068B1 (en) * | 2008-12-03 | 2010-05-25 | Micrel, Incorporated | Bandgap-referenced thermal sensor |
DE102009057107B4 (en) * | 2009-12-04 | 2011-11-10 | Micronas Gmbh | Method and circuit arrangement for controlling switching transistors of an integrated circuit |
US8864377B2 (en) * | 2012-03-09 | 2014-10-21 | Hong Kong Applied Science & Technology Research Institute Company Limited | CMOS temperature sensor with sensitivity set by current-mirror and resistor ratios without limiting DC bias |
-
2003
- 2003-04-10 US US10/411,955 patent/US7118273B1/en not_active Expired - Lifetime
-
2004
- 2004-10-07 US US10/961,311 patent/US7108420B1/en not_active Expired - Lifetime
-
2011
- 2011-09-23 US US13/243,976 patent/US9222843B2/en not_active Expired - Fee Related
-
2016
- 2016-07-14 US US15/210,208 patent/US20160320247A1/en not_active Abandoned
-
2018
- 2018-06-18 US US16/011,324 patent/US20180356295A1/en not_active Abandoned
-
2019
- 2019-08-09 US US16/537,200 patent/US20190360872A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4480312A (en) * | 1981-08-14 | 1984-10-30 | Wingate Steven L | Temperature sensor/controller system |
US4781065A (en) * | 1984-05-09 | 1988-11-01 | Cole Martin T | Solid-state anemometers and temperature gauges |
US5063307A (en) * | 1990-09-20 | 1991-11-05 | Ixys Corporation | Insulated gate transistor devices with temperature and current sensor |
US5519354A (en) * | 1995-06-05 | 1996-05-21 | Analog Devices, Inc. | Integrated circuit temperature sensor with a programmable offset |
US6876250B2 (en) * | 2000-07-07 | 2005-04-05 | International Business Machines Corporation | Low-power band-gap reference and temperature sensor circuit |
US6631503B2 (en) * | 2001-01-05 | 2003-10-07 | Ibm Corporation | Temperature programmable timing delay system |
US7279954B2 (en) * | 2001-03-27 | 2007-10-09 | Nissan Motor Co., Ltd. | On-chip temperature detection device |
US20020173724A1 (en) * | 2001-05-18 | 2002-11-21 | Dorando Dale Gene | Signal conditioning device for interfacing intravascular sensors having varying operational characteristics to a physiology monitor |
US7828479B1 (en) * | 2003-04-08 | 2010-11-09 | National Semiconductor Corporation | Three-terminal dual-diode system for fully differential remote temperature sensors |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190086272A1 (en) * | 2017-09-17 | 2019-03-21 | Qualcomm Incorporated | Diode-based temperature sensor |
US10578497B2 (en) * | 2017-09-17 | 2020-03-03 | Qualcomm Incorporated | Diode-based temperature sensor |
US11133040B2 (en) | 2019-09-16 | 2021-09-28 | Samsung Electronics Co., Ltd. | Semiconductor memory device and a memory system having the same |
Also Published As
Publication number | Publication date |
---|---|
US20190360872A1 (en) | 2019-11-28 |
US20120013364A1 (en) | 2012-01-19 |
US9222843B2 (en) | 2015-12-29 |
US20180356295A1 (en) | 2018-12-13 |
US7108420B1 (en) | 2006-09-19 |
US7118273B1 (en) | 2006-10-10 |
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