CN108731833A - A kind of distal end CMOS temperature measuring circuits - Google Patents
A kind of distal end CMOS temperature measuring circuits Download PDFInfo
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- CN108731833A CN108731833A CN201810355825.3A CN201810355825A CN108731833A CN 108731833 A CN108731833 A CN 108731833A CN 201810355825 A CN201810355825 A CN 201810355825A CN 108731833 A CN108731833 A CN 108731833A
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- distal end
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- temperature measuring
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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Abstract
The present invention provides a kind of distal end CMOS temperature measuring circuits, including：Distal end bipolar transistor and CMOS thermometric chips, the distal end bipolar transistor are connected with the CMOS thermometrics chip；The CMOS thermometrics chip includes：ADC converters and digital processing circuit, the ADC converters are connected between the distal end bipolar transistor and the digital processing circuit.The scheme of parasitism/filter resistance in being measured present invention employs a kind of automatic elimination distal temperature, after analog signal containing temperature information is converted by internal analog-digital converter, it is directly converted into the storage of decimal system temperature value, can directly be accessed by SMBus general digitals communication interface.CMOS temperature measurement circuits need not calibrate distal end resistance, can measure to obtain accurate temperature value under different application occasion, greatly improve ease for use.
Description
Technical field
The present invention relates to electronic circuit fields, and in particular, to a kind of distal end CMOS temperature measuring circuits.
Background technology
In many scenes of actual life, it is required for measurement temperature value, to reach monitoring temperature, overtemperature alarm and adaptive
The purpose of should adjusting, such as by thermometric chip monitoring central processing unit (CPU) temperature, when temperature break bounds, by starting wind
Fan reduces the means such as working frequency, so that temperature is reduced, prevents the excessively high machine breakdown brought of temperature.Due to CMOS integrated circuits
Fast development, CMOS temperature measures chip the features such as possessing small size, high-precision and low cost and is widely used, and utilizes VBE
With the correlation of temperature and electric current, V under different current densitiesBEVoltage difference delta VBE, it is one and the positively related electricity of absolute temperature
Pressure value.The problem of currently available technology, is：
1, in certain temperature measuring applications, the temperature value for monitoring CMOS thermometric chips distal end is needed.Most prior art is only retouched
The research for measuring CMOS thermometric chips local temperature and corresponding problem is stated；
2, temperature-sensitive transistor in distal end has longer line to CMOS thermometric chips, when there are larger noise jammings in application environment
When, it needs to be inserted into RC filter circuits in front end, in addition the influence of PCB trace, different according to chip periphery circuit is measured, introducing
Dead resistance arrives thousands of ohm levels at several ohm.The about 0.6 DEG C/Ohm of temperature error introduced by dead resistance, if not eliminating this
Dead resistance, CMOS thermometric chips will be unable to work normally.
Patent CN105784157 discloses a kind of low-power consumption, high linearity CMOS temperature sensor, will be relevant with temperature
Electric current is added in the PNP transistor of single base-collector junction short circuit, obtains and the relevant voltage output of temperature.It is only used for local
Temperature measures, and the mode of simulation output is not easy to temperature value reading/use.
Patent CN106482852 discloses a kind of low error CMOS temperature transmitter of wide range, by 1：5 function of current in
The PNP transistor pair of internal base-collector short circuit generates and the relevant V of temperatureBEValue and Δ VBEValue, passes through second order Δ Σ
ADC obtains decimal system temperature value, the disadvantage is that chip local temperature can only be measured, can not be suitable for the application of external transistor；It adopts
Sample/amplification clock frequency changes with output bit flow, and clock circuit is realized complicated.
Invention content
For the defects in the prior art, the object of the present invention is to provide a kind of distal end CMOS temperature measuring circuits.
According to a kind of distal end CMOS temperature measuring circuits provided by the invention, including：Distal end bipolar transistor and
CMOS thermometric chips, the distal end bipolar transistor are connected with the CMOS thermometrics chip；
The CMOS thermometrics chip includes：ADC converters and digital processing circuit, the ADC converters are connected to described
Between distal end bipolar transistor and the digital processing circuit.
Preferably, the base emitter voltage V of the distal end bipolar transistorBEWith bias current there are logarithmic relationship,
And with absolute temperature positive correlation, when using two different current value I1、I2When encouraging bipolar transistor, VBEDifference exist with
Lower formula：
K is Boltzmann constant in formula, is worth for 1.38X10-23, q is elementary charge, is worth for 1.6X10-19, T is Kelvin's temperature
Degree, I2And I1Ratio be N, ISFor transistor saturation current.
Preferably, the ADC converters are second order Δ Σ ADC module, using Switch capacitor structure, by two integrators and
One comparator circuit composition, wherein first order integrator gain is controllable, and matching timing control realizes that ectoparasitism resistance disappears
It removes.
Preferably, the digital processing circuit includes digital control logic, the bit of processing second order Δ Σ ADC module output
Stream.
Preferably, the digital processing circuit carries out filtering extraction operation to the bit stream that the ADC converters export, obtain
To bit stream mean μ, it is multiplied by slope value A, in addition imbalance value B, obtains decimal system temperature value DTEMP, alternatively, to slope value A and mistake
Tone pitch B rows trim, to correct the output of ADC converter temperatures.
Preferably, the CMOS thermometrics chip further includes：Controllable current source, using cascode structures, driver transistor,
It generates and the relevant voltage value of temperatureIcFor the bias current of transistor, ISFor transistor saturation current.
Preferably, the CMOS thermometrics chip further includes：Series resistance is eliminated, current source control sequence, when described
When the bit stream bs=0 of ADC converters output, electric current source sequence is (N*I, 1*I, 2*I, 2N*I)；As bs=1, current source
Sequence is (2M*I, 0,0, M*I).
Preferably, the CMOS thermometrics chip further includes：
Analog selection switchs, and bipolar transistor temperature or monitoring local crystal tube temperature degree are much held in selection monitoring；
RC oscillators provide clock for the ADC converters and the digital control logic；
Register array connects the ADC converters；
SMBus buses connect the digital control logic and the register array, with PERCOM peripheral communication.
Preferably, being connected with RC filter modules between the distal end bipolar transistor and the CMOS thermometrics chip.
Preferably, the Switch capacitor structure is full-differential circuits structure.
Compared with prior art, the present invention has following advantageous effect：
The scheme of parasitism/filter resistance in being measured present invention employs a kind of automatic elimination distal temperature, will contain temperature letter
After the analog signal of breath is converted by internal analog-digital converter, it is directly converted into the storage of decimal system temperature value, it can be logical by SMBus
It is directly accessed with digital communication interface.CMOS temperature measurement circuits need not calibrate distal end resistance, can be surveyed under different application occasion
Accurate temperature value is measured, ease for use is greatly improved.
Description of the drawings
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature of the invention,
Objects and advantages will become more apparent upon：
Fig. 1 is the application schematic diagram of the present invention；
Fig. 2 is the circuit diagram of CMOS thermometrics chip of the present invention；
Fig. 3 is the circuit diagram of switching capacity of the present invention；
Fig. 4 is the work schedule schematic diagram of switching capacity of the present invention.
Specific implementation mode
With reference to specific embodiment, the present invention is described in detail.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, several changes and improvements can also be made.These belong to the present invention
Protection domain.
As shown in Figure 1, a kind of distal end CMOS temperature measuring circuits provided by the invention, including：Distal end bipolar transistor
100 and CMOS thermometrics chip 120, distal end bipolar transistor 100 are connected with CMOS thermometrics chip 120, the ambipolar crystalline substance in distal end
Body pipe 100 can be parasitic transistor in discrete device such as 2N3904NPN, 2N3906PNP or processor；CMOS thermometrics
Chip 120 includes：ADC converters 121 and digital processing circuit 122, ADC converters 121 are connected to distal end bipolar transistor
It, can be by bipolar transistor and the relevant analog voltage V of temperature between digital processing circuit 122BEWith Δ VBE, it is converted into ten
System temperature value exports.When, there are when larger noise jamming, in distal end, bipolar transistor 100 and CMOS are surveyed in application environment
It is inserted into RC filter modules 110 between warm chip 120, temperature measurement accuracy can be improved.
The base emitter voltage V of distal end bipolar transistorBEThere are logarithmic relationships with bias current, and with absolute temperature
Positive correlation is spent, as two different current value I of use1、I2When encouraging bipolar transistor, there are following formula：
In formula, VBE2For current value I2Under base emitter voltage, VBE1For current value I1Under base-emitter electricity
Pressure, k is Boltzmann constant, is worth for 1.38X10-23, q is elementary charge, is worth for 1.6X10-19, T is kelvin degree, I2And I1For
Transistor bias currents encourage, ratio N, ISFor transistor saturation current, Δ V is utilizedBETemperature can be obtained in temperature sensitive properties
Information.ΔVBEIt is one and the positively related one-to-one analog voltage of kelvin degree, if measuring the simulation by ADC
Voltage, you can extrapolate kelvin degree.
ADC converters are second order Δ Σ ADC module, using Switch capacitor structure, by two integrators and a comparator
Circuit forms, and wherein first order integrator gain is controllable, and matching timing control realizes that ectoparasitism resistance is eliminated.
Digital processing circuit 122 includes digital control logic, the bit stream of processing second order Δ Σ ADC module output.Number
Processing circuit carries out filtering extraction operation to the bit stream bs that ADC converters export, and obtains bit stream mean μ, is multiplied by slope value
A, in addition imbalance value B, obtains decimal system temperature value DTEMP, alternatively, being trimmed to slope value A and imbalance value B rows, turned with correcting ADC
Parallel operation temperature exports.
As shown in Fig. 2, CMOS thermometric chip interiors specifically include：Controllable current source 180, using cascode structures, to carry
High power supply voltage inhibits ratio, is used for driver transistor, generates and the relevant voltage value of temperatureIcFor transistor
Bias current.Series resistance eliminates 181 (Series Resistance Cancellation, SRC), special for generating
Current source control sequence, as bs=0, electric current source sequence is (N*I, 1*I, 2*I, 2N*I)；As bs=1, electric current source sequence
For (2M*I, 0,0, M*I).Monitoring distal end temperature of transistor or monitoring local crystal tube temperature may be selected in analog selection switch 182
Degree.Second order Δ Σ ADC module 184 is made of using Switch capacitor structure two integrators and a comparator circuit, wherein
First order integrator gain is controllable, and matching timing control is, it can be achieved that ectoparasitism resistance is eliminated.Digital control logic 185, is used for
ADC bit stream process.RC oscillators 183, for providing clock for second order Δ Σ ADC module 184 and digital control logic 185.
SMBus buses 186 connect digital control logic 185 and register array 187, acceptable system SMBus instructions, facilitate chip with
Main-machine communication.Register array 187 connects second order Δ Σ ADC module 184, is used for real-time storage temperature measurement result and chip work
Make state etc., can be read and write by SMBus buses.
In Fig. 2：Loc Temp Reg:Local temperature register, local temperature register；RMT Temp
Reg：Remote temperature register, distal temperature register；Status Reg：Status register；SMBCLK：
SMBus bus clock signals；SMBDATA：SMBus data signal bus.
As shown in Figure 3 and Figure 4, actual circuit uses fully differential structure, to provide good common mode inhibition capacity, for side
Just illustrate, it is illustrated that be only single-ended schematic diagram.
In figure, bs is the bit stream of second order Δ Σ ADC module output, CKSFor first order integrator sampling clock, CKhIt is
Level-one integrator amplifies clock, S24To S1Signal is controlled for sampling capacitance sequence switch, SRC can control first order integrator gain
With input VBEValue.
In order to eliminate ectoparasitism resistance, need to generate fixed Impetus of Current Source by controllable current source, cooperation ADC is adopted
Sample network gain is adjustable, it can be achieved that resistance eliminates function, and principle is as follows.
As bs=0, electric current source sequence is (N*I, 1*I, 2*I, 2N*I), integral a* Δs VBE.Current source is (N*I, 1*I)
When, first order integrator gain is 2a, and when current source is (2*I, 2N*I), first order integrator gain is α：R indicates that distal end is double
Bipolar transistor connect the dead resistance generated with ADC, and I indicates unit current source.VBEN*IIt is N times of unitary current for exciting current
When, VBEValue；VBE1*IWhen for exciting current being 1 times of unitary current, VBEValue；VBE2*IWhen for exciting current being 2 times of unitary currents, VBE
Value；VBE2N*IWhen for exciting current being 2N times of unitary current, VBEValue；
As bs=1, electric current source sequence is (2M*I, 0,0, M*I), integral-VBE0d5MI.When current source is (2M*I, 0),
First order integrator gain is 1, and when current source is (0, M*I), first order integrator gain is 2：I indicates unit current source.
VBE2M*IWhen for exciting current being 2M times of unitary current, VBEValue；VBEM*IWhen for exciting current being M times of unitary current, VBEValue；
While to ensure lower current consumption, there is sufficient Δ VBEValue takes N=to simplify circuit design in of the invention
9, M=3, a=12.
I is unit current source, and N*I is N times of unit current source, and 2*I is 2 times of unit current sources, and 2N*I is 2N times of unit electricity
Stream source, for generating2M*I is 2M times of unit current source, and M*I is M times of unit current source, for generating
Enable bit stream mean value be μ has according to integrator charge conservation：
μ is linear related to absolute temperature, is multiplied by slope value A, in addition imbalance value B, you can obtain decimal system temperature value
DTEMP.In the present invention, A=610, B=280 are taken.
One skilled in the art will appreciate that in addition to realizing system provided by the invention in a manner of pure computer readable program code
It, completely can be by the way that method and step be carried out programming in logic come so that the present invention provides and its other than each device, module, unit
System and its each device, module, unit with logic gate, switch, application-specific integrated circuit, programmable logic controller (PLC) and embedding
Enter the form of the controller that declines etc. to realize identical function.So system provided by the invention and its every device, module, list
Member is considered a kind of hardware component, and also may be used for realizing the device of various functions, module, unit to include in it
To be considered as the structure in hardware component；It can also will be considered as realizing the device of various functions, module, unit either real
The software module of existing method can be the structure in hardware component again.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can make a variety of changes or change within the scope of the claims, this not shadow
Ring the substantive content of the present invention.In the absence of conflict, the feature in embodiments herein and embodiment can arbitrary phase
Mutually combination.
Claims (10)
1. a kind of distal end CMOS temperature measuring circuits, which is characterized in that including：Distal end bipolar transistor and CMOS thermometric cores
Piece, the distal end bipolar transistor are connected with the CMOS thermometrics chip；
The CMOS thermometrics chip includes：ADC converters and digital processing circuit, the ADC converters are connected to the distal end
Between bipolar transistor and the digital processing circuit.
2. CMOS temperature measuring circuits in distal end according to claim 1, which is characterized in that the distal end bipolar transistor
Base emitter voltage VBEThere are logarithmic relationships with bias current, and with absolute temperature positive correlation, when using two different electricity
Flow valuve I1、I2When encouraging bipolar transistor, VBEDifference there are following formula：
K is Boltzmann constant in formula, is worth for 1.38X10-23, q is elementary charge, is worth for 1.6X10-19, T is kelvin degree, I2
And I1Ratio be N, ISFor transistor saturation current.
3. CMOS temperature measuring circuits in distal end according to claim 1, which is characterized in that the ADC converters are second order
Δ Σ ADC module is made of using Switch capacitor structure two integrators and a comparator circuit, and wherein the first order integrates
Device gain controllable, matching timing control realize that ectoparasitism resistance is eliminated.
4. CMOS temperature measuring circuits in distal end according to claim 3, which is characterized in that the digital processing circuit includes
Digital control logic, the bit stream of processing second order Δ Σ ADC module output.
5. CMOS temperature measuring circuits in distal end according to claim 4, which is characterized in that the digital processing circuit is to institute
The bit stream for stating the output of ADC converters carries out filtering extraction operation, obtains bit stream mean μ, is multiplied by slope value A, in addition imbalance
Value B obtains decimal system temperature value DTEMP, alternatively, slope value A and imbalance value B rows are trimmed, it is defeated to correct ADC converter temperatures
Go out.
6. CMOS temperature measuring circuits in distal end according to claim 4, which is characterized in that the CMOS thermometrics chip also wraps
It includes：Controllable current source, using cascode structures, driver transistor generates and the relevant voltage value of temperatureIc
For the bias current of transistor, ISFor transistor saturation current.
7. CMOS temperature measuring circuits in distal end according to claim 6, which is characterized in that the CMOS thermometrics chip also wraps
It includes：Series resistance is eliminated, current source control sequence, as the bit stream bs=0 of ADC converters output, current source
Sequence is (N*I, 1*I, 2*I, 2N*I)；As bs=1, electric current source sequence is (2M*I, 0,0, M*I).
8. CMOS temperature measuring circuits in distal end according to claim 6, which is characterized in that the CMOS thermometrics chip also wraps
It includes：
Analog selection switchs, selection monitoring distal end bipolar transistor temperature or monitoring local crystal tube temperature degree；
RC oscillators provide clock for the ADC converters and the digital control logic；
Register array connects the ADC converters；
SMBus buses connect the digital control logic and the register array, with PERCOM peripheral communication.
9. CMOS temperature measuring circuits in distal end according to claim 1, which is characterized in that the distal end bipolar transistor
It is connected with RC filter modules between the CMOS thermometrics chip.
10. CMOS temperature measuring circuits in distal end according to claim 1, which is characterized in that the Switch capacitor structure is
Full-differential circuits structure.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110095197A (en) * | 2019-05-06 | 2019-08-06 | 上海申矽凌微电子科技有限公司 | Temperature measuring device |
| CN110470409A (en) * | 2019-08-02 | 2019-11-19 | 上海申矽凌微电子科技有限公司 | The distal temperature measuring system being easily integrated |
| CN110514314A (en) * | 2019-08-27 | 2019-11-29 | 李拥军 | A kind of CMOS technology low power consumption high-precision temperature sensor |
| CN111157133A (en) * | 2019-12-30 | 2020-05-15 | 无锡泽太微电子有限公司 | Temperature detection method and device based on temperature sensor and temperature sensor |
| CN111189561A (en) * | 2019-11-21 | 2020-05-22 | 上海申矽凌微电子科技有限公司 | Ultra-high temperature far-end temperature measurement calibration method, measurement calibration circuit and medium |
| CN112050960A (en) * | 2019-06-06 | 2020-12-08 | 联发科技股份有限公司 | Thermal sensor and chip |
| CN113108926A (en) * | 2021-03-26 | 2021-07-13 | 江苏银河芯微电子有限公司 | Temperature measuring device and method and remote temperature measuring system |
| CN114356020A (en) * | 2022-01-10 | 2022-04-15 | 中国科学院半导体研究所 | Circuit for eliminating parasitic resistance of far-end temperature sensor and control method thereof |
| CN117091712A (en) * | 2023-10-20 | 2023-11-21 | 杭州得明电子有限公司 | Manganese copper temperature testing method and device for IR46 Internet of things meter |
| WO2024031839A1 (en) * | 2022-08-11 | 2024-02-15 | 上海申矽凌微电子科技股份有限公司 | Thermal management chip and system for master unit having built-in interface and management method |
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| CN111157133A (en) * | 2019-12-30 | 2020-05-15 | 无锡泽太微电子有限公司 | Temperature detection method and device based on temperature sensor and temperature sensor |
| CN113108926A (en) * | 2021-03-26 | 2021-07-13 | 江苏银河芯微电子有限公司 | Temperature measuring device and method and remote temperature measuring system |
| CN114356020A (en) * | 2022-01-10 | 2022-04-15 | 中国科学院半导体研究所 | Circuit for eliminating parasitic resistance of far-end temperature sensor and control method thereof |
| WO2024031839A1 (en) * | 2022-08-11 | 2024-02-15 | 上海申矽凌微电子科技股份有限公司 | Thermal management chip and system for master unit having built-in interface and management method |
| CN117091712A (en) * | 2023-10-20 | 2023-11-21 | 杭州得明电子有限公司 | Manganese copper temperature testing method and device for IR46 Internet of things meter |
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Application publication date: 20181102 |