CN115356004A - Temperature sensor and temperature measuring method - Google Patents
Temperature sensor and temperature measuring method Download PDFInfo
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- CN115356004A CN115356004A CN202211029758.9A CN202211029758A CN115356004A CN 115356004 A CN115356004 A CN 115356004A CN 202211029758 A CN202211029758 A CN 202211029758A CN 115356004 A CN115356004 A CN 115356004A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
Abstract
The invention discloses a temperature sensor and a temperature measuring method. The temperature sensor includes: the device comprises a negative temperature coefficient voltage generating circuit, a first charge storage module, a second charge storage module, a zero temperature coefficient voltage generating circuit, an operational amplifier and a switch module; the negative temperature coefficient voltage generating circuit is used for writing a first negative temperature coefficient voltage into the first end of the first charge storage module in the first stage and writing a second negative temperature coefficient voltage into the first end of the first charge storage module in the second stage; the positive phase input end of the operational amplifier is connected with zero temperature coefficient voltage; the switch module is used for conducting the output end and the inverting input end of the operational amplifier in a first stage and writing the zero-temperature coefficient voltage into the second end of the second charge storage module; and the second stage is used for conducting the output end of the operational amplifier and the second end of the second charge storage module. The invention can improve the measurement precision of the temperature sensor.
Description
Technical Field
The invention relates to the technical field of temperature sensing, in particular to a temperature sensor and a temperature measuring method.
Background
The temperature sensor is widely applied to the fields of modern industry, medical treatment, traffic, intelligent home and the like. Early temperature sensors were mainly based on temperature sensitive materials such as thermistors, however temperature sensors made of thermistors have the defects of low precision, poor linearity and inefficient integration. With the rapid development of integrated circuits, an integrated temperature sensor based on a CMOS (Complementary Metal Oxide Semiconductor) has attracted attention because of its easy integration, low cost, direct output of digital signals, and the like.
The existing integrated temperature sensor needs to adopt an operational amplifier to superpose zero-temperature-coefficient voltage and positive-temperature-coefficient voltage, so as to obtain voltage positively correlated with temperature; however, the operational amplifier has a dc offset problem, which results in low measurement accuracy of the conventional integrated temperature sensor, and is not suitable for further application of the integrated temperature sensor.
Disclosure of Invention
The invention provides a temperature sensor and a temperature measuring method, which aim to solve the problem of direct current offset of an operational amplifier in the temperature sensor.
According to an aspect of the present invention, there is provided a temperature sensor including:
the device comprises a negative temperature coefficient voltage generating circuit, a first charge storage module, a second charge storage module, a zero temperature coefficient voltage generating circuit, an operational amplifier and a switch module;
the negative temperature coefficient voltage generating circuit is used for writing a first negative temperature coefficient voltage into the first end of the first charge storage module in a first stage of the same cycle, and writing a second negative temperature coefficient voltage into the first end of the first charge storage module in a second stage;
the second end of the first charge storage module is electrically connected with the inverting input end of the operational amplifier and the first end of the second charge storage module;
the zero temperature coefficient voltage generating circuit is used for generating a zero temperature coefficient voltage; the positive phase input end of the operational amplifier is connected with the zero temperature coefficient voltage, and the output end of the operational amplifier is electrically connected with the output end of the temperature sensor;
the switch module is used for conducting an output end of the operational amplifier and an inverting input end of the operational amplifier in the first stage and writing the zero temperature coefficient voltage into a second end of the second charge storage module; the switch module is further configured to connect the output terminal of the operational amplifier to the second terminal of the second charge storage module in the second phase.
Optionally, the negative temperature coefficient voltage generating circuit includes:
the circuit comprises a current source, a first switch unit, a second switch unit, a third switch unit, a fourth switch unit, a first triode and a second triode;
a first end of the current source is connected to a first power supply voltage, and a second end of the current source is electrically connected with a first end of the first switch unit and a first end of the second switch unit;
the second end of the first switch unit is electrically connected with the emitter of the first triode; the base electrode of the first triode and the collector electrode of the first triode are both connected with a second power supply voltage;
the second end of the second switch unit is electrically connected with the emitter of the second triode; the base electrode of the second triode and the collector electrode of the second triode are both connected to the second power supply voltage;
a first end of the third switching unit is electrically connected with a second end of the first switching unit, and a second end of the third switching unit is electrically connected with a first end of the first charge storage module;
a first end of the fourth switch unit is electrically connected with a second end of the second switch unit, and a second end of the fourth switch unit is electrically connected with a first end of the first charge storage module;
wherein the area ratio of the first triode to the second triode is 1: n and N are integers more than 1.
Optionally, at least one of the first switch unit, the second switch unit, the third switch unit and the fourth switch unit is a transistor.
Optionally, the first charge storage module is a first capacitor, a first end of the first capacitor is used as a first end of the first charge storage module, and a second end of the first capacitor is used as a second end of the first charge storage module; and/or the presence of a gas in the gas,
the second charge storage module is a second capacitor, a first end of the second capacitor is used as a first end of the second charge storage module, and a second end of the second capacitor is used as a second end of the second charge storage module.
Optionally, the switch module comprises a fifth switch unit, a sixth switch unit and a seventh switch unit;
a first end of the fifth switching unit is electrically connected with an inverting input end of the operational amplifier, and a second end of the fifth switching unit is electrically connected with an output end of the operational amplifier;
a first end of the sixth switching unit is electrically connected with a second end of the second charge storage module, and a second end of the sixth switching unit is electrically connected with an output end of the operational amplifier;
the first end of the seventh switch unit is electrically connected with the second end of the second charge storage module, and the second end of the seventh switch unit is connected to the zero temperature coefficient voltage.
Optionally, at least one of the fifth switching unit, the sixth switching unit and the seventh switching unit is a transistor.
Optionally, the temperature sensor further comprises an analog-to-digital conversion module; the output end of the operational amplifier is electrically connected with the output end of the temperature sensor through the analog-to-digital conversion module, wherein the output end of the operational amplifier is electrically connected with the data input end of the analog-to-digital conversion module, the reference input end of the analog-to-digital conversion module is connected with the zero temperature coefficient voltage, and the output end of the analog-to-digital conversion module is electrically connected with the output end of the temperature sensor.
Optionally, the analog-to-digital conversion module is a delta-sigma analog-to-digital converter or a successive approximation analog-to-digital converter.
Optionally, the zero temperature coefficient voltage generating circuit is a bandgap reference voltage circuit.
According to another aspect of the present invention, there is provided a temperature measuring method performed by the above temperature sensor, the temperature measuring method including:
configuring the negative temperature coefficient voltage generating circuit to write a first negative temperature coefficient voltage into the first end of the first charge storage module in a first stage and write a second negative temperature coefficient voltage into the first end of the first charge storage module in a second stage in the same period;
the switch module is configured to conduct an output end of the operational amplifier and an inverting input end of the operational amplifier at the first stage, and the zero temperature coefficient voltage is written into a second end of the second charge storage module; and in the second stage, the output end of the operational amplifier is conducted with the second end of the second charge storage module.
According to the technical scheme of the embodiment of the invention, different negative temperature coefficient voltages are written into the first charge storage module through the negative temperature coefficient voltage generating circuit at different stages, and different voltages are written into the second charge storage module through the switch module at different stages, so that a temperature voltage formula containing a slope and an intercept can be obtained, and the direct-current offset voltage of the operational amplifier is compensated, thereby greatly improving the precision of the temperature sensor.
It should be understood that the statements in this section do not necessarily identify key or critical features of the embodiments of the present invention, nor do they necessarily limit the scope of the invention. Other features of the present invention will become apparent from the following description.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic circuit diagram of a temperature sensor according to an embodiment of the present invention;
FIG. 2 is a timing diagram of a temperature sensor according to an embodiment of the present invention;
fig. 3 is a schematic circuit diagram of another temperature sensor according to an embodiment of the present invention;
fig. 4 is a flowchart of a temperature measurement method according to an embodiment of the present invention.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in other sequences than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Fig. 1 is a schematic circuit structure diagram of a temperature sensor according to an embodiment of the present invention, and referring to fig. 1, the temperature sensor includes: the temperature coefficient voltage generating circuit comprises a negative temperature coefficient voltage generating circuit 10, a first charge storage module 11, a second charge storage module 12, a zero temperature coefficient voltage generating circuit 13, an operational amplifier 14 and a switch module; the negative temperature coefficient voltage generating circuit 10 is configured to write a first negative temperature coefficient voltage into the first end of the first charge storage module 11 in a first stage of the same cycle, and write a second negative temperature coefficient voltage into the first end of the first charge storage module 11 in a second stage; the second end of the first charge storage module 11 is electrically connected with the inverting input end of the operational amplifier and the first end of the second charge storage module 12; the zero temperature coefficient voltage generating circuit 13 is configured to generate a zero temperature coefficient voltage VREF; the non-inverting input end of the operational amplifier 14 is connected with a zero temperature coefficient voltage VREF, and the output end of the operational amplifier 14 is electrically connected with the output end OUT of the temperature sensor; the switching module is configured to, in a first stage, turn on an output terminal of the operational amplifier 14 and an inverting input terminal of the operational amplifier 14, and write a zero temperature coefficient voltage VREF into a second terminal of the second charge storage module 12; the switch module is further configured to conduct the output terminal of the operational amplifier 14 to the second terminal of the second charge storage module 12 in the second phase.
Specifically, the negative temperature coefficient voltage generating circuit 10 may generate two negative temperature coefficient voltages, that is, a first negative temperature coefficient voltage and a second negative temperature coefficient voltage, by using a bipolar transistor, where the first negative temperature coefficient voltage and the second negative temperature coefficient voltage are different. The negative temperature coefficient voltage generating circuit 10 can specifically obtain a negative temperature coefficient voltage according to a voltage formula between a base electrode and an emitter electrode of the triode, and a positive temperature coefficient voltage can be obtained through the difference between the two negative temperature coefficient voltages; as known to those skilled in the art, the ptc voltage cannot be directly used for outputting the temperature voltage because the ptc voltage only contains the slope of the temperature voltage output formula and does not contain the intercept of the temperature voltage output formula; the positive temperature coefficient voltage and the temperature-independent zero temperature coefficient voltage can be input to the operational amplifier 14, and a temperature voltage output formula including intercept and slope can be obtained. The first charge storage module 11 may be a capacitor, and the second charge storage module 12 may also be a capacitor.
In this embodiment, each period of the temperature measurement includes two phases, i.e., a first phase and a second phase, and during the first phase, the negative temperature coefficient voltage generating circuit 10 applies a first negative temperature coefficient voltage (hereinafter referred to as "negative temperature coefficient voltage")VBEL) is written into the first end of the first charge storage module 11, and at this time, the inverting input end of the operational amplifier 14 and the output end thereof are turned on, so that the voltage at the inverting input end of the operational amplifier 14 is VREF + VOS, that is, the voltage at the second end of the first charge storage module 11 is VREF + VOS, the voltage difference between the two ends of the first charge storage module 11 at the first stage is (VREF + VOS-VBEL), the stored charge is C0 (VREF + VOS-VBEL), where VOS is the dc offset voltage of the operational amplifier 14, and C0 is the capacitance of the first charge storage module 11. In the first stage, the voltage at the first terminal of the second charge storage module 12 is also VREF + VOS, and the voltage at the second terminal of the second charge storage module 12 is VREF, so that the charge stored in the second charge storage module 12 at this time is (VREF + VOS-VREF) × C1= VOS × C1, and C1 is the capacitance of the second charge storage module 12. In the second stage, the voltage of the first end of the first charge storage module 11 becomes a second negative temperature coefficient voltage (hereinafter referred to as VBEH), and the voltage of the second end thereof is still VREF + VOS, so that the voltage of the two ends of the first charge storage module 11 becomes (VREF + VOS-VBEH) at this time, and the charge stored in the first charge storage module 11 becomes C0 (VREF + VOS-VBEH); in the second stage, the voltage of the first terminal of the second charge storage module 12 is still VREF + VOS, and the voltage of the second terminal of the second charge storage module 12 becomes Vout, where Vout is the output voltage of the operational amplifier, and the charge on the second charge storage module 12 in the second stage is (VREF + VOS-Vout) × C1. According to the principle of charge conservation, that is, the total charge amount of the first charge storage module 11 and the second charge storage module 12 cannot change abruptly, in other words, the total charge of the first charge storage module 11 and the second charge storage module 12 in the first phase is equal to the total charge of the two in the second phase, so that there is C0 × (VREF + VOS-VBEL) + VOS × C1= C0 × (VREF + VOS-VBEH) + (VREF + VOS-Vout) × C1; can obtain
(ii) a Wherein VBEH-VBEL is a positive temperature coefficient voltage, VREF is a zero temperature coefficient voltage, and from the above analysis, the temperature sensor of this embodiment can output a temperature voltage formula containing a slope and an intercept,and the direct current offset voltage VOS of the operational amplifier is compensated through twice sampling, so that the precision of the temperature sensor is greatly improved.
According to the technical scheme of the embodiment, different negative temperature coefficient voltages are written into the first charge storage module through the negative temperature coefficient voltage generating circuit at different stages, and different voltages are written into the second charge storage module through the switch module at different stages, so that a temperature voltage formula containing a slope and an intercept can be obtained, the direct-current offset voltage of the operational amplifier is compensated, and the precision of the temperature sensor is greatly improved. In addition, a chopper amplifier is not required to be introduced, the circuit design is simplified, and non-ideal factors are eliminated, so that the measurement accuracy is not reduced.
Optionally, with continued reference to fig. 1, the negative temperature coefficient voltage generation circuit 10 includes: the current source IS, a first switch unit SW1, a second switch unit SW2, a third switch unit SW3, a fourth switch unit SW4, a first triode QL and a second triode QR; a first end of the current source IS connected to a first power supply voltage VCC, and a second end of the current source IS electrically connected with a first end of the first switch unit SW1 and a first end of the second switch unit SW 2; a second end of the first switching unit SW1 is electrically connected with an emitter of the first triode QL; the base electrode of the first triode QL and the collector electrode of the first triode QL are both connected with a second power supply voltage VSS; a second end of the second switch unit SW2 is electrically connected with an emitter of the second triode QR, and a base electrode of the second triode QR and a collector of the second triode QR are both connected with a second power supply voltage VSS; a first end of the third switching unit SW3 is electrically connected with a second end of the first switching unit SW1, and a second end of the third switching unit SW3 is electrically connected with a first end of the first charge storage module 11; a first end of the fourth switching unit SW4 is electrically connected with a second end of the second switching unit SW2, and a second end of the fourth switching unit SW4 is electrically connected with a first end of the first charge storage module 11; the area ratio of the first triode QL to the second triode QR is 1: n and N are integers more than 1.
Further, as shown in fig. 1, the switching module includes a fifth switching unit SW5, a sixth switching unit SW6, and a seventh switching unit SW7; a first end of the fifth switching unit SW5 is electrically connected with the inverting input end of the operational amplifier 14, and a second end of the fifth switching unit SW5 is electrically connected with the output end of the operational amplifier 14; a first end of the sixth switching unit SW6 is electrically connected to the second end of the second charge storage module 12, and a second end of the sixth switching unit SW6 is electrically connected to the output end of the operational amplifier 14; a first end of the seventh switching unit SW7 is electrically connected to a second end of the second charge storage module 12, and a second end of the seventh switching unit SW7 is connected to the zero temperature coefficient voltage VREF.
Specifically, in the above-described embodiment, at least one of the first switching unit SW1 to the seventh switching unit SW7 is a transistor, and preferably, may be made of a transistor. Fig. 2 is a timing diagram of a temperature sensor according to an embodiment of the invention, in which a first timing sequence PH1 in fig. 2 is used to control a first switch unit SW1, a third switch unit SW3, a fifth switch unit SW5 and a seventh switch unit SW7, and a second timing sequence PH2 is used to control a second switch unit SW2, a fourth switch unit SW4 and a sixth switch unit SW6, where, taking the example that each switch unit is turned on at a low level and turned off at a high level, effective pulses of the first timing sequence PH1 and the second timing sequence PH2 are not overlapped, in other words, the switch unit that needs to be turned on in the first stage is not turned on in the second stage, and the switch unit that needs to be turned on in the second stage is not turned on in the first stage.
In the first stage t1, the first switching unit SW1 and the third switching unit SW3 are turned on, the first transistor QL generates a first negative temperature coefficient voltage VBEL, and writes the first negative temperature coefficient voltage VBEL into the first end of the first charge storage module 11, and at this time, the fifth switching unit SW5 is turned on, and the inverting input end of the operational amplifier 14 is turned on with the output end thereof, so that the voltage at the inverting input end of the operational amplifier 14 is VREF + VOS, that is, the voltage at the second end of the first charge storage module 11 is VREF + VOS, then the voltage difference between the two ends of the first charge storage module 11 in the first stage is (VREF + VOS-VBEL), and the stored charge is C0 (VREF + VOS-VBEL). In the first stage, the voltage of the first terminal of the second charge storage module 12 is also VREF + VOS, and since the seventh switching unit SW7 is turned on and the voltage of the second terminal of the second charge storage module 12 is VREF, the second charge storage is performed at this timeThe charge stored on the memory block 12 is (VREF + VOS — VREF) × C1= VOS × C1. At the second stage t2, the second switching unit SW2 and the fourth switching unit SW4 are turned on, the second triode QR generates a second negative temperature coefficient voltage VBH and transmits the second negative temperature coefficient voltage VBH to the first charge storage module 11, the voltage at the second end of the first charge storage module 11 is still VREF + VOS, then the voltages at the two ends of the first charge storage module 11 become (VREF + VOS-VBEH), and the charge stored in the first charge storage module 11 becomes C0 (VREF + VOS-VBEH); in the second stage, the voltage at the first end of the second charge storage module 12 is still VREF + VOS, and since the sixth switching unit SW6 is turned on, the voltage at the second end of the second charge storage module 12 becomes Vout, and the charge on the second charge storage module 12 in the second stage is (VREF + VOS-Vout) × C1. According to the principle of charge conservation, that is, the total charge amount of the first charge storage module 11 and the second charge storage module 12 cannot change abruptly, in other words, the total charge of the first charge storage module 11 and the second charge storage module 12 in the first phase is equal to the total charge of the two in the second phase, so that there is C0 × (VREF + VOS-VBEL) + VOS × C1= C0 × (VREF + VOS-VBEH) + (VREF + VOS-Vout) × C1; can obtain
(ii) a And due to the fact that
Wherein k Is a Boltzmann constant, q Is an electron charge amount, T Is an absolute temperature value, is a saturation current of the transistor, ibias Is a collector current, and
=
(ii) a Thereby obtaining
。
Of course, it should be noted that the negative temperature coefficient voltage generating circuit 10 and the switching unit may also have other structures as long as the functions described in the present embodiment can be achieved. The second transistor QR may be composed of N first transistors QL. The zero temperature coefficient voltage generating circuit 13 may adopt a bandgap reference voltage circuit, the bandgap reference voltage circuit can generate a voltage independent of temperature, the voltage is used as the zero temperature coefficient voltage VREF, and the circuit structure and the working principle of the bandgap reference voltage circuit are well known to those skilled in the art and are not described herein again.
Optionally, fig. 3 is a schematic circuit structure diagram of another temperature sensor provided in an embodiment of the present invention, and referring to fig. 3, the temperature sensor further includes an analog-to-digital conversion module 15; the output end of the operational amplifier 14 is electrically connected with the output end OUT of the temperature sensor through the analog-to-digital conversion module 15; the output end of the operational amplifier 14 is electrically connected to the data input end of the analog-to-digital conversion module 15, the reference input end of the analog-to-digital conversion module 15 is connected to the zero temperature coefficient voltage VREF, and the output end of the analog-to-digital conversion module 15 is electrically connected to the output end OUT of the temperature sensor.
In particular, the analog output voltage can be converted into digital form by the analog-to-digital conversion module 15, which is more suitable for modern electronic circuits. In addition, the temperature sensor of the embodiment eliminates the dc offset voltage and suppresses the 1/f noise of the operational amplifier in the two sampling processes, wherein 1/f is the turning frequency. In addition, the analog-to-digital conversion module 15 of the present embodiment is not necessarily limited to the delta-sigma analog-to-digital converter, and a successive approximation analog-to-digital converter may be selected.
The present invention further provides a temperature measurement method, as shown in fig. 4, fig. 4 is a flowchart of a temperature measurement method provided in an embodiment of the present invention, and the temperature measurement method is executed by a temperature sensor provided in any embodiment of the present invention, and includes:
step S110, in a first stage of the same period, configuring a negative temperature coefficient voltage generating circuit to write a first negative temperature coefficient voltage into a first end of a first charge storage module in the first stage, and to write a second negative temperature coefficient voltage into the first end of the first charge storage module in a second stage; the switch module is configured to conduct the output end of the operational amplifier and the inverting input end of the operational amplifier at a first stage and write the zero-temperature coefficient voltage into the second end of the second charge storage module; and the output end of the operational amplifier is conducted with the second end of the second charge storage module in the second stage.
Specifically, the temperature measurement process of the temperature sensor can refer to the description of the temperature sensor part in this embodiment, and is not described herein again. By the temperature measuring method of the embodiment, the direct-current offset voltage of the operational amplifier can be eliminated, so that the measuring precision is greatly improved.
It should be understood that various forms of the flows shown above may be used, with steps reordered, added, or deleted. For example, the steps described in the present invention may be executed in parallel, sequentially, or in different orders, and are not limited herein as long as the desired results of the technical solution of the present invention can be achieved.
The above-described embodiments should not be construed as limiting the scope of the invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made in accordance with design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A temperature sensor, characterized in that the temperature sensor comprises:
the device comprises a negative temperature coefficient voltage generating circuit, a first charge storage module, a second charge storage module, a zero temperature coefficient voltage generating circuit, an operational amplifier and a switch module;
the negative temperature coefficient voltage generating circuit is used for writing a first negative temperature coefficient voltage into the first end of the first charge storage module in a first stage of the same cycle, and writing a second negative temperature coefficient voltage into the first end of the first charge storage module in a second stage;
the second end of the first charge storage module is electrically connected with the inverting input end of the operational amplifier and the first end of the second charge storage module;
the zero temperature coefficient voltage generating circuit is used for generating a zero temperature coefficient voltage; the positive phase input end of the operational amplifier is connected with the zero temperature coefficient voltage, and the output end of the operational amplifier is electrically connected with the output end of the temperature sensor;
the switch module is used for conducting an output end of the operational amplifier and an inverting input end of the operational amplifier in the first stage and writing the zero temperature coefficient voltage into a second end of the second charge storage module; the switch module is further configured to conduct the output terminal of the operational amplifier with the second terminal of the second charge storage module in the second stage.
2. The temperature sensor of claim 1, wherein the negative temperature coefficient voltage generation circuit comprises:
the circuit comprises a current source, a first switch unit, a second switch unit, a third switch unit, a fourth switch unit, a first triode and a second triode;
a first end of the current source is connected to a first power supply voltage, and a second end of the current source is electrically connected with a first end of the first switch unit and a first end of the second switch unit;
the second end of the first switch unit is electrically connected with the emitter of the first triode; the base electrode of the first triode and the collector electrode of the first triode are both connected with a second power supply voltage;
the second end of the second switch unit is electrically connected with the emitter of the second triode; the base electrode of the second triode and the collector electrode of the second triode are both connected to the second power supply voltage;
the first end of the third switching unit is electrically connected with the second end of the first switching unit, and the second end of the third switching unit is electrically connected with the first end of the first charge storage module;
a first end of the fourth switch unit is electrically connected with a second end of the second switch unit, and a second end of the fourth switch unit is electrically connected with a first end of the first charge storage module;
wherein the area ratio of the first triode to the second triode is 1: n and N are integers more than 1.
3. The temperature sensor according to claim 2, wherein at least one of the first switch unit, the second switch unit, the third switch unit, and the fourth switch unit is a transistor.
4. The temperature sensor of claim 1,
the first charge storage module is a first capacitor, a first end of the first capacitor is used as a first end of the first charge storage module, and a second end of the first capacitor is used as a second end of the first charge storage module; and/or the presence of a gas in the atmosphere,
the second charge storage module is a second capacitor, a first end of the second capacitor is used as a first end of the second charge storage module, and a second end of the second capacitor is used as a second end of the second charge storage module.
5. The temperature sensor of claim 1, wherein the switch module comprises a fifth switch unit, a sixth switch unit, and a seventh switch unit;
a first end of the fifth switching unit is electrically connected with an inverting input end of the operational amplifier, and a second end of the fifth switching unit is electrically connected with an output end of the operational amplifier;
a first end of the sixth switching unit is electrically connected with a second end of the second charge storage module, and a second end of the sixth switching unit is electrically connected with an output end of the operational amplifier;
the first end of the seventh switch unit is electrically connected with the second end of the second charge storage module, and the second end of the seventh switch unit is connected to the zero temperature coefficient voltage.
6. The temperature sensor according to claim 5, wherein at least one of the fifth switching unit, the sixth switching unit, and the seventh switching unit is a transistor.
7. The temperature sensor of claim 1, further comprising an analog-to-digital conversion module; the output end of the operational amplifier is electrically connected with the output end of the temperature sensor through the analog-to-digital conversion module, wherein the output end of the operational amplifier is electrically connected with the data input end of the analog-to-digital conversion module, the reference input end of the analog-to-digital conversion module is connected with the zero temperature coefficient voltage, and the output end of the analog-to-digital conversion module is electrically connected with the output end of the temperature sensor.
8. The temperature sensor of claim 7, wherein the analog-to-digital conversion module is a delta-sigma analog-to-digital converter or a successive approximation analog-to-digital converter.
9. The temperature sensor of claim 1, wherein the zero temperature coefficient voltage generation circuit is a bandgap reference voltage circuit.
10. A temperature measurement method performed by the temperature sensor according to any one of claims 1 to 9, characterized by comprising:
configuring the negative temperature coefficient voltage generating circuit to write a first negative temperature coefficient voltage to the first terminal of the first charge storage module in a first stage and to write a second negative temperature coefficient voltage to the first terminal of the first charge storage module in a second stage within the same cycle;
the switch module is configured to conduct the output end of the operational amplifier and the inverting input end of the operational amplifier at the first stage, and the zero temperature coefficient voltage is written into the second end of the second charge storage module; and in the second stage, the output end of the operational amplifier is conducted with the second end of the second charge storage module.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116931642A (en) * | 2023-09-13 | 2023-10-24 | 浙江地芯引力科技有限公司 | Band-gap reference voltage source and band-gap reference circuit |
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2022
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116931642A (en) * | 2023-09-13 | 2023-10-24 | 浙江地芯引力科技有限公司 | Band-gap reference voltage source and band-gap reference circuit |
| CN116931642B (en) * | 2023-09-13 | 2023-12-19 | 浙江地芯引力科技有限公司 | Band-gap reference voltage source and band-gap reference circuit |
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