US20160126424A1 - Light-emitting diode lighting device - Google Patents
Light-emitting diode lighting device Download PDFInfo
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- US20160126424A1 US20160126424A1 US14/529,162 US201414529162A US2016126424A1 US 20160126424 A1 US20160126424 A1 US 20160126424A1 US 201414529162 A US201414529162 A US 201414529162A US 2016126424 A1 US2016126424 A1 US 2016126424A1
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Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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Definitions
- LED light-emitting diode
- LEDs with high power and high brightness have been presented to the market.
- the LEDs used as light bulbs have the advantage of long lifetime. Therefore, such LED light bulbs have the tendency to replace other conventional light sources.
- LEDs can be applied to various types of lamps, such as traffic lights, street lights, and flashlights.
- This disclosure provides a light-emitting diode (LED) lighting device to achieve high power, high luminous efficiency, and longer lifetime.
- LED light-emitting diode
- a LED lighting device in one aspect of the disclosure, includes a substrate, a first bottom electrode, a second bottom electrode, a first bottom transparent isolation layer, a second bottom transparent isolation layer, at least one first vertical LED, at least one second vertical LED, and a top transparent electrode.
- the substrate has at least one first recess and at least one second recess therein, in which at least one of the first recess and the second recess has a bottom surface and at least one tapered side surface adjacent to the bottom surface.
- the first bottom electrode is disposed in the first recess.
- the second bottom electrode is disposed in the second recess, in which at least one of the first bottom electrode and the second bottom electrode is reflective and covers at least a part of the bottom surface and at least a part of the tapered side surface.
- the first vertical LED is disposed in the first recess and on the first bottom electrode.
- the second vertical LED is disposed in the second recess and on the second bottom electrode.
- the first bottom transparent isolation layer is disposed in the first recess, in which the first bottom transparent isolation layer has at least one opening therein to expose at least a part of the first vertical LED.
- the second bottom transparent isolation layer is disposed in the second recess, in which the second bottom transparent isolation layer has at least one opening therein to expose at least a part of the second vertical LED.
- the top transparent electrode electrically connects the first vertical LED and the second bottom electrode.
- the LED lighting device can achieve high power and high luminous efficiency by electrically connecting to a power supply with high voltage.
- the current passing the first vertical LED and the second vertical LED needs not to be large to achieve high power and high luminous efficiency. Therefore, the lifetime of the first vertical LED and the second vertical LED may be longer, and cooling may not become a problem.
- FIG. 1 is a schematic cross-sectional view of a light-emitting diode (LED) lighting device according to one embodiment of this disclosure
- FIG. 2 is a schematic cross-sectional view of the LED lighting device according to another embodiment of this disclosure.
- FIG. 3A is a schematic top view of the LED lighting device according to one embodiment of this disclosure.
- FIG. 3B is a schematic top view of the LED lighting device according to another embodiment of this disclosure.
- FIGS. 4A to 4C are horizontal cross-sectional views of a patterned dielectric layer according to different embodiments of this disclosure.
- FIG. 5 is a schematic cross-sectional view of the LED lighting device according to another embodiment of this disclosure.
- FIG. 6 is a schematic cross-sectional view of the LED lighting device according to another embodiment of this disclosure.
- FIG. 7 is a schematic cross-sectional view of the LED lighting device according to another embodiment of this disclosure.
- FIG. 1 is a schematic cross-sectional view of a light-emitting diode (LED) lighting device 100 according to one embodiment of this disclosure.
- LED light-emitting diode
- the LED lighting device 100 includes a substrate 110 , bottom electrodes 121 and 126 , bottom transparent isolation layers 130 and 131 , at least one vertical LED 200 , at least one vertical LED 400 , and a top transparent electrode 144 .
- the substrate 110 has at least one recess 113 and at least one recess 116 therein.
- the recess 113 has a bottom surface 114 and at least one tapered side surface 115 adjacent to the bottom surface 114
- the recess 116 has a bottom surface 117 and at least one tapered side surface 118 adjacent to the bottom surface 117
- the bottom electrode 121 is disposed in the recess 113
- the bottom electrode 121 is reflective and covers at least a part of the bottom surface 114 and at least a part of the tapered side surface 115
- the bottom electrode 126 is disposed in the recess 116 , and the bottom electrode 126 is reflective and covers at least a part of the bottom surface 117 and at least a part of the tapered side surface 118 .
- the vertical LED 200 is disposed in the recess 113 and on the bottom electrode 121 .
- the vertical LED 400 is disposed in the recess 116 and on the bottom electrode 126 .
- the bottom transparent isolation layer 130 is disposed in the recess 113 and has at least one opening 132 therein to expose at least a part of the vertical LED 200 .
- the bottom transparent isolation layer 131 is disposed in the recess 116 and has at least one opening 136 therein to expose at least a part of the vertical LED 400 .
- the top transparent electrode 144 electrically connects the vertical LED 400 and the bottom electrode 121 , such that the vertical LEDs 200 and 400 are electrically connected in series.
- the LED lighting device 100 can achieve high power and high luminous efficiency.
- the current passing through the vertical LEDs 200 and 400 can remain small to enhance the lifetime of the vertical LEDs 200 and 400 and reduce heat generated by the vertical LEDs 200 and 400 .
- the power of the combination of the vertical LEDs 200 and 400 is 6.25 watts. If a single LED is used to achieve the same power, the current should be 2 amperes. As a result, the single LED may have a shorter lifetime due to the larger passing current, and the cooling of the single LED may also be more difficult.
- the LED lighting device 100 employs the top transparent electrode 144 as its top electrode to interconnect different electronic components, a wire bonding process may not be needed. Therefore, the process yield of the LED lighting device 100 is improved, and the manufacturing cost of the LED lighting device 100 is lowered.
- the substrate 110 has a high thermal conductivity.
- the substrate 110 is made of silicon, such as undoped silicon, p-type silicon, or n-type silicon, or a ceramic material.
- the potential of the substrate 110 may be operated to be the lowest among all elements of the LED lighting device 100 , such that the contact surface of the substrate 110 and the conductive elements above the substrate 110 (for example, the bottom electrode 121 or the top transparent electrodes 144 ) totally or partially form a reverse bias of the p-n junction. Therefore, the substrate 110 is electrically insulated from the conductive elements above the substrate 110 .
- FIG. 2 is a schematic cross-sectional view of the LED lighting device 100 according to another embodiment of this disclosure.
- the substrate 110 includes an insulation layer 111 and a conductive layer 112 .
- the insulation layer 111 may be made of silicon dioxide (SiO2), which may be oxidized from silicon.
- the conductive layer 112 may be made of metal such as aluminium, and the conductive layer 112 may function as a heat-dissipating layer.
- the potential of the substrate 110 may be operated to be the intermediate value of the maximum potential and the minimum potential among all elements of the LED lighting device 100 , such that the potential differences between the substrate 110 and the conductive elements above the substrate 110 (for example, the bottom electrode 121 or the top transparent electrodes 142 ) are not too large. Therefore, the current does not pass through the insulation layer 111 , and thus the substrate 110 is electrically insulated from the conductive elements above the substrate 110 .
- the depth of the recess 113 is in a range from about 5 ⁇ m to about 50 ⁇ m. People having ordinary skill in the art can make proper modifications to the depth of the recess 113 depending on the actual application.
- the angle between the bottom surface 114 and the tapered side surface 115 is in a range from about 120° to about 160°, and the angle between the bottom surface 117 and the tapered side surface 118 is in a range from about 120° to about 160° as well. If the substrate 110 is made of silicon, and the recess 113 is formed by a wet etching process, the angle between the bottom surface 114 and the tapered side surface 115 is about 125.3°.
- the bottom electrodes 121 and 126 are made of metal, such as silver. Embodiments of this disclosure are not limited thereto. In other embodiments, the bottom electrodes 121 and 126 are multi-layer structures. For example, the bottom electrodes 121 and 126 are double-layer structures made of copper and silver or triple-layer structures made of copper, titanium, and silver.
- the bottom electrodes 121 and 126 functions as a reflective layer to reflect light emitted from the vertical LEDs 200 and 400 , such that light emitted from the vertical LEDs 200 and 400 forwards upwardly.
- the cup-shaped bottom electrodes 121 and 126 light emitted from the vertical LEDs 200 and 400 are ensured to forward upwardly and does not forward in an unwanted direction.
- the vertical LEDs 200 and 400 are in the same electricity polarity.
- the vertical LED 400 further includes a first semiconductor layer 410 proximal to the top transparent electrode 144 and a second semiconductor layer 420 proximal to the bottom electrode 126 .
- the vertical LED 200 further includes a first semiconductor layer 210 distal to the bottom electrode 121 and a second semiconductor layer 220 proximal to the bottom electrode 121 .
- the first semiconductor layers 210 and 410 of the vertical LEDs 200 and 400 are of the same type, and the second semiconductor layers 220 and 420 of the vertical LEDs 200 and 400 are of the same type.
- the first semiconductor layers 210 and 410 of the vertical LEDs 200 and 400 are n-type semiconductor layers, and the second semiconductor layers 220 and 420 of the vertical LEDs 200 and 400 are p-type semiconductor layers.
- the first semiconductor layers 210 and 410 of the vertical LEDs 200 and 400 are p-type semiconductor layers, and the second semiconductor layers 220 and 420 of the vertical LEDs 200 and 400 are n-type semiconductor layers.
- the first semiconductor layers 210 and 410 and the second semiconductor layers 220 and 420 can be made of gallium nitride (GaN). People having ordinary skill in the art can make proper modifications to the material of the first semiconductor layers 210 and 410 and the second semiconductor layers 220 and 420 depending on the actual application.
- GaN gallium nitride
- the vertical LED 200 further includes an active layer 230 disposed between the first semiconductor layer 210 and the second semiconductor layer 220 .
- the vertical LED 400 further includes an active layer 430 disposed between the first semiconductor layer 410 and the second semiconductor layer 420 .
- the active layer 230 and 430 can be multiple-quantum-well structures.
- the bottom transparent isolation layers 130 and 131 have a high refractive index. Specifically, the refractive index of the bottom transparent isolation layers 130 and 131 is greater than 1.5.
- the bottom transparent isolation layers 130 and 131 may reduce total reflection in the vertical LEDs 200 and 400 and thus enhance the light extraction of the vertical LEDs 200 and 400 .
- the top transparent electrode 144 is made of indium tin oxide (ITO). People having ordinary skill in the art can make proper modifications to the material of the top transparent electrode 144 depending on the actual application.
- ITO indium tin oxide
- the LED lighting device 100 further includes at least one vertical LED 300 , at least one vertical LED 500 , and a top transparent electrode 142 .
- the vertical LED 300 is disposed in the recess 113 and on the bottom electrode 121 .
- the vertical LED 500 is disposed in the recess 116 and on the bottom electrode 126 .
- the bottom transparent isolation layer 130 has an opening 134 therein to expose at least a part of the vertical LED 300 .
- the bottom transparent isolation layer 131 has an opening 138 therein to expose at least a part of the vertical LED 500 .
- the top transparent electrode 144 is further electrically connected to the vertical LED 500 through the opening 138
- the top transparent electrode 142 is electrically connected to the vertical LEDs 200 and 300 through the openings 132 and 134 .
- the bottom electrodes 121 and the top transparent electrodes 142 cooperate to electrically connect the vertical LEDs 200 and 300 in parallel.
- the bottom electrodes 126 and the top transparent electrodes 144 cooperate to electrically connect the vertical LEDs 400 and
- the vertical LEDs 200 , 300 , 400 , and 500 are in the same electricity polarity.
- the vertical LED 300 includes a first semiconductor layer 310 proximal to the top transparent electrode 142 and a second semiconductor layer 320 proximal to the bottom electrode 121
- the vertical LED 500 includes a first semiconductor layer 510 proximal to the top transparent electrode 144 and a second semiconductor layer 520 proximal to the bottom electrode 126 .
- the first semiconductor layers 210 , 310 , 410 , and 510 of the vertical LEDs 200 , 300 , 400 , and 500 are of the same type, and the second semiconductor layers 220 , 320 , 420 , and 520 of the vertical LEDs 200 , 300 , 400 , and 500 are of the same type.
- FIG. 3A is a schematic top view of the LED lighting device 100 according to one embodiment of this disclosure.
- the LED light device 100 further includes bottom electrodes 191 and 192 , top transparent electrodes 146 and 148 , and vertical LEDs 610 , 620 , 630 , and 640 .
- the vertical LEDs 200 and 300 , 400 and 500 , 610 and 620 , and 630 and 640 are electrically connected to each other via the bottom electrodes 121 , 126 , 191 , and 192 and the top transparent electrodes 142 , 144 , 146 and 148 .
- the vertical LEDs 610 and 620 are electrically connected in parallel via the bottom electrode 191 and the top transparent electrode 146 .
- the vertical LEDs 630 and 640 are electrically connected in parallel via the bottom electrode 192 and the top transparent electrode 148 .
- the LED lighting device 100 further includes an input electrode 710 and an output electrode 720 respectively electrically connected to the top transparent electrodes 142 and 148 for allowing a power supply to be electrically connected thereto.
- the input electrode 710 and the output electrode 720 are single-layer structures or multi-layer structures, and the input electrode 710 and the output electrode 720 are made of conductive materials.
- the input electrode 710 and the output electrode 720 are single-layer structures made of silver, double-layer structures made of copper and silver, or triple-layer structures made of copper, titanium, and silver.
- the input electrode 710 , the output electrode 720 , and the bottom electrodes 121 , 126 , 191 , and 192 may be formed in the same process.
- the shape of the substrate 100 is a cuboid, and the bottom electrodes, top transparent electrodes, and vertical LEDs are disposed in a line. Embodiments of this disclosure are not limited thereto.
- the shape of the substrate 100 may be a cylindrical column, a triangular prism, a cube, a cuboid, a hexagonal column, an octagonal column, or a polygon column.
- FIG. 3B is a schematic top view of the LED lighting device according to another embodiment of this disclosure.
- the shape of the substrate 100 is a cylindrical column, and the bottom electrodes, top transparent electrodes, and vertical LEDs are disposed in a ring.
- the shape of the substrate 100 may be a cylindrical column, a triangular prism, a cube, a cuboid, a hexagonal column, an octagonal column, or a polygon column.
- the shape of the bottom electrode 122 , 124 , 126 , 191 , and 192 may be a cylindrical column, a cube, a cuboid, a dumbbell-shaped column, or a polygon column.
- the shape of the LEDs 200 , 300 , 400 , 500 , 610 , 620 , 630 , and 640 may be a cylindrical column, a cube, a cuboid, a hexagonal column, an octagonal column, or a polygon column.
- the shape of the top transparent electrodes 142 , 144 , 146 , and 148 may be a cylindrical column, a cube, a cuboid, a hexagonal column, an octagonal column, or a polygon column.
- the shape of the input electrode 710 and the output electrode 720 may be a cylindrical column, a cube, a cuboid, a hexagonal column, an octagonal column, or a polygon column.
- the first vertical LED 200 further includes a patterned dielectric layer 240 .
- the patterned dielectric layer 240 is disposed between the first semiconductor layer 210 and the top transparent electrode 142 .
- the patterned dielectric layer 240 covers an edge portion of the first semiconductor layer 210 and has an opening 242 .
- the top transparent electrode 142 is electrically connected to the vertical LED 200 through the opening 242 .
- the function of the patterned dielectric layer 240 is to prevent the surface recombination of the vertical LED 200 and to prevent the leakage of the current through the side surface of the vertical LED 200 , thereby enhancing the luminous efficiency of the vertical LED 200 .
- the material of the patterned dielectric layer 240 is silicon nitride or silicon dioxide.
- the patterning of the patterned dielectric layer 240 is performed by developing and etching process or screen printing and etching process.
- the vertical LED 200 further includes a guard ring 250 disposed on the patterned dielectric layer 240 .
- the function of the guard ring 250 is to prevent electrostatic discharge (ESD) and to make the current in the top transparent electrode 142 spread and evenly enter the vertical LED 200 .
- the guard ring 250 is made of metal, such as silver.
- the patterning of the guard ring 250 is performed by developing and etching process or screen printing and etching process. If the shapes of the horizontal cross-sections of the patterned dielectric layer 240 and the guard ring 250 are the same, the patterning of the guard ring 250 may be used as the mask of the patterned dielectric layer 240 .
- FIGS. 4A to 4C are horizontal cross-sectional views of the patterned dielectric layer 240 according to different embodiments of this disclosure.
- the shape of the horizontal cross-section of the patterned dielectric layer 240 may be a ring, a ring with a cross, or a plurality of rings with a cross.
- the shape of the horizontal cross-section of guard ring 250 may be similar to the shape of the horizontal cross-section of the patterned dielectric layer 240 .
- the shape of the horizontal cross-section of guard ring 250 may be a ring, a ring with a cross, or a plurality of rings with a cross.
- other vertical LEDs such as vertical LED 300 , 400 , or 500 may have patterned dielectric layer and the guard ring similar to the vertical LED 200 as well.
- top transparent electrodes 142 and 144 may be patterned from a transparent conductive layer.
- the patterning of top transparent electrodes 142 and 144 is performed by developing and etching process or screen printing and etching process.
- the substrate 110 further has a top surface 119 between the recess 113 and the recess 116 , and a part of the bottom electrode 121 is disposed on the top surface 119 .
- the bottom transparent isolation layer 130 covers the bottom electrode 121 and exposes the part of the bottom electrode 121 disposed on the top surface 119 . Therefore, the top transparent electrode 144 and the bottom electrode 121 make an electrical contact with each other on the top surface 119 , such that the part of the bottom electrode 121 disposed on the top surface 191 functions as an auxiliary electrode of the top transparent electrode 144 , and the bottom electrode 121 is electrically isolated from the top transparent electrode 142 by the bottom transparent isolation layer 130 .
- the function of the auxiliary electrode is to enhance the conductivity of the top transparent electrode 144 .
- the LED lighting device 100 further includes at least one top transparent isolation layer 160 covering at least one of the recesses 113 and 116 and at least one of the vertical LEDs 200 , 300 , 400 , and 500 .
- the top transparent isolation layer 160 has a high refractive index. Specifically, the refractive index of the top transparent isolation layer is greater than 1.5.
- the refractive index of the bottom transparent isolation layer 130 and 131 is greater than or equal to the refractive indices of top transparent isolation layer 160 .
- the top transparent isolation layer 160 may reduce total reflection in the LED light device 100 and thus enhance the light extraction of the vertical LEDs 200 , 300 , 400 , and 500 .
- top transparent isolation layer 160 covers the recess 113 and the vertical LED 200 and 300
- another part of top transparent isolation layer 160 covers the recess 116 and the vertical LEDs 400 and 500 .
- the number of the top transparent isolation layers 160 is at least two, and the top transparent isolation layers 160 are stacked.
- the refractive indices of the top transparent isolation layers 160 increase toward the vertical LEDs 200 and 300 or the vertical LEDs 400 and 500 , and the number of the top transparent isolation layers 160 is up to 5.
- the material of the top transparent isolation layer 160 may be the same as the material of the bottom transparent isolation layer 130 . People having ordinary skill in the art can make proper modifications to the material of the top transparent isolation layer 160 depending on the actual application.
- the LED lighting device 100 further includes a phosphor layer 170 disposed on the top transparent isolation layer 160 covering at least one of the recesses 113 and 116 and at least one of the vertical LEDs 200 , 300 , 400 , and 500 .
- a part of the phosphor layer 170 covers the recess 113 and the vertical LEDs 200 and 300 , and another part of the phosphor layer 170 covers the recess 116 and the vertical LEDs 400 and 500 .
- the refractive index of the bottom transparent isolation layer 130 is greater than or equal to the refractive index of the phosphor layer 170
- the refractive index of the top transparent isolation layer 160 is greater than or equal to the refractive index of the phosphor layer 170 .
- the top transparent isolation layer 160 is shaped to allow optical path lengths from at least one of the vertical LEDs 200 , 300 , 400 , and 500 through different portions of the phosphor layer 170 to be substantially the same. Specifically, the top transparent isolation layer 160 is substantially dome shaped. Therefore, the color of the light passing the phosphor layer 170 is even. The situation that the color of some of the light passing the phosphor layer 170 is yellowish and the color of the other of the light passing the phosphor layer 170 is bluish is avoided.
- the LED lighting device 100 further includes an encapsulation layer 180 disposed on the phosphor layer 170 .
- the encapsulation layer 180 covers at least one of the recesses 113 and 116 and at least one of the vertical LEDs 200 , 300 , 400 , and 500 .
- a part of the encapsulation layer 180 covers the recess 113 and the vertical LEDs 200 and 300
- another part of the encapsulation layer 180 covers the recess 116 and the vertical LEDs 400 and 500 .
- FIG. 5 is a schematic cross-sectional view of the LED lighting device 100 according to another embodiment of this disclosure. As shown in FIG. 5 , the encapsulation layer 180 integrally covers the recesses 113 and 116 and the vertical LEDs 200 , 300 , 400 and 500 .
- FIG. 6 is a schematic cross-sectional view of the LED lighting device 100 according to another embodiment of this disclosure.
- the top transparent isolation layer 160 integrally covers the recesses 113 and 116 and the vertical LEDs 200 , 300 , 400 and 500 .
- the phosphor layer 170 integrally covers the recesses 113 and 116 and the vertical LEDs 200 , 300 , 400 and 500 .
- the encapsulation layer 180 integrally covers the recesses 113 and 116 and the vertical LEDs 200 , 300 , 400 and 500 .
- the vertical LEDs 200 , 300 , 400 , and 500 have top surfaces, and heights of the top surfaces of the vertical LEDs 200 , 300 , 400 , and 500 are lower than a height of the top surface 119 of the substrate 110 . Therefore, lateral light emitted from the vertical LEDs 200 , 300 , 400 , and 500 is reflected by the bottom electrodes 121 and 126 , and there are rooms to dispose additional transparent dielectric layers or phosphor layers in the recesses 113 and 116 to adjust optical paths, such that light efficiency of the LED lighting device 100 is optimized.
- the number of the vertical LEDs in the recess 113 and the number of the vertical LEDs in the recess 116 are the same. Embodiments of this disclosure are not limited thereto. In some embodiment, the number of the vertical LEDs in the recess 113 and the number of the vertical LEDs in the recess 116 are different. For example, in some embodiments, the LED lighting device 100 does not include the vertical LED 300 . In some embodiments, the LED lighting device 100 further includes at least one additional vertical LED in the recess 113 .
- FIG. 7 is a schematic cross-sectional view of the LED lighting device 100 according to another embodiment of this disclosure.
- the bottom electrode 121 is not disposed on the top surface 119 , and a part of the top transparent electrode 144 is disposed on the tapered side surface 115 .
- the top transparent electrode 144 and the bottom electrode 121 make an electrical contact with each other on the tapered side surface 115 .
- the LED lighting device 100 includes only one substrate, i.e., the substrate 110 , and all other structures are stacked on the substrate 110 . Therefore, the manufacturing processes of the LED lighting device 100 become easy, and problems such as alignment difficulty are avoided, such that the process yield is enhanced and the production cost is lowered.
- the LED lighting device 100 can achieve high power and high luminous efficiency by electrically connecting to a power supply with high voltage.
- the current passing the vertical LEDs needs not to be large to achieve high power and high luminous efficiency. Therefore, the lifetime of the vertical LEDs may be longer, and cooling may not become a problem.
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Abstract
Description
- In recent years, light-emitting diode (LED) technologies have improved a lot, and LEDs with high power and high brightness have been presented to the market. In addition, the LEDs used as light bulbs have the advantage of long lifetime. Therefore, such LED light bulbs have the tendency to replace other conventional light sources. LEDs can be applied to various types of lamps, such as traffic lights, street lights, and flashlights.
- Since LEDs gradually become mainstream light sources, improving properties of LEDs becomes an important issue, and this becomes the main goal in the R&D departments of the LED industries.
- This disclosure provides a light-emitting diode (LED) lighting device to achieve high power, high luminous efficiency, and longer lifetime.
- In one aspect of the disclosure, a LED lighting device is provided. The LED lighting device includes a substrate, a first bottom electrode, a second bottom electrode, a first bottom transparent isolation layer, a second bottom transparent isolation layer, at least one first vertical LED, at least one second vertical LED, and a top transparent electrode. The substrate has at least one first recess and at least one second recess therein, in which at least one of the first recess and the second recess has a bottom surface and at least one tapered side surface adjacent to the bottom surface. The first bottom electrode is disposed in the first recess. The second bottom electrode is disposed in the second recess, in which at least one of the first bottom electrode and the second bottom electrode is reflective and covers at least a part of the bottom surface and at least a part of the tapered side surface. The first vertical LED is disposed in the first recess and on the first bottom electrode. The second vertical LED is disposed in the second recess and on the second bottom electrode. The first bottom transparent isolation layer is disposed in the first recess, in which the first bottom transparent isolation layer has at least one opening therein to expose at least a part of the first vertical LED. The second bottom transparent isolation layer is disposed in the second recess, in which the second bottom transparent isolation layer has at least one opening therein to expose at least a part of the second vertical LED. The top transparent electrode electrically connects the first vertical LED and the second bottom electrode.
- By electrically connecting the first vertical LED and the second vertical LED in series, the LED lighting device can achieve high power and high luminous efficiency by electrically connecting to a power supply with high voltage. In addition, the current passing the first vertical LED and the second vertical LED needs not to be large to achieve high power and high luminous efficiency. Therefore, the lifetime of the first vertical LED and the second vertical LED may be longer, and cooling may not become a problem.
- It is to be understood that both the foregoing general description and the following detailed description are by examples, and are intended to provide further explanation of the invention as claimed.
- The invention can be more fully understood by reading the following detailed description of the embodiment, with reference made to the accompanying drawings as follows:
-
FIG. 1 is a schematic cross-sectional view of a light-emitting diode (LED) lighting device according to one embodiment of this disclosure; -
FIG. 2 is a schematic cross-sectional view of the LED lighting device according to another embodiment of this disclosure; -
FIG. 3A is a schematic top view of the LED lighting device according to one embodiment of this disclosure; -
FIG. 3B is a schematic top view of the LED lighting device according to another embodiment of this disclosure; -
FIGS. 4A to 4C are horizontal cross-sectional views of a patterned dielectric layer according to different embodiments of this disclosure; -
FIG. 5 is a schematic cross-sectional view of the LED lighting device according to another embodiment of this disclosure; -
FIG. 6 is a schematic cross-sectional view of the LED lighting device according to another embodiment of this disclosure; and -
FIG. 7 is a schematic cross-sectional view of the LED lighting device according to another embodiment of this disclosure. - In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically depicted in order to simplify the drawings.
-
FIG. 1 is a schematic cross-sectional view of a light-emitting diode (LED)lighting device 100 according to one embodiment of this disclosure. As shown inFIG. 1 , anLED lighting device 100 is provided. TheLED lighting device 100 includes asubstrate 110,bottom electrodes transparent isolation layers vertical LED 200, at least onevertical LED 400, and a toptransparent electrode 144. Thesubstrate 110 has at least one recess 113 and at least one recess 116 therein. Therecess 113 has abottom surface 114 and at least onetapered side surface 115 adjacent to thebottom surface 114, and therecess 116 has abottom surface 117 and at least onetapered side surface 118 adjacent to thebottom surface 117. Thebottom electrode 121 is disposed in therecess 113, and thebottom electrode 121 is reflective and covers at least a part of thebottom surface 114 and at least a part of thetapered side surface 115. Thebottom electrode 126 is disposed in therecess 116, and thebottom electrode 126 is reflective and covers at least a part of thebottom surface 117 and at least a part of thetapered side surface 118. Thevertical LED 200 is disposed in therecess 113 and on thebottom electrode 121. Thevertical LED 400 is disposed in therecess 116 and on thebottom electrode 126. The bottomtransparent isolation layer 130 is disposed in therecess 113 and has at least oneopening 132 therein to expose at least a part of thevertical LED 200. The bottomtransparent isolation layer 131 is disposed in therecess 116 and has at least oneopening 136 therein to expose at least a part of thevertical LED 400. The toptransparent electrode 144 electrically connects thevertical LED 400 and thebottom electrode 121, such that thevertical LEDs - By electrically connecting the
vertical LEDs LED lighting device 100 can achieve high power and high luminous efficiency. In addition, the current passing through thevertical LEDs vertical LEDs vertical LEDs - Specifically, for example, if the voltage difference of each of the
vertical LEDs vertical LEDs vertical LEDs - Because the
LED lighting device 100 employs the toptransparent electrode 144 as its top electrode to interconnect different electronic components, a wire bonding process may not be needed. Therefore, the process yield of theLED lighting device 100 is improved, and the manufacturing cost of theLED lighting device 100 is lowered. - The
substrate 110 has a high thermal conductivity. Specifically, thesubstrate 110 is made of silicon, such as undoped silicon, p-type silicon, or n-type silicon, or a ceramic material. - When the
substrate 110 is made of silicon, the potential of thesubstrate 110 may be operated to be the lowest among all elements of theLED lighting device 100, such that the contact surface of thesubstrate 110 and the conductive elements above the substrate 110 (for example, thebottom electrode 121 or the top transparent electrodes 144) totally or partially form a reverse bias of the p-n junction. Therefore, thesubstrate 110 is electrically insulated from the conductive elements above thesubstrate 110. - Embodiments of this disclosure are not limited thereto.
FIG. 2 is a schematic cross-sectional view of theLED lighting device 100 according to another embodiment of this disclosure. As shown inFIG. 2 , thesubstrate 110 includes aninsulation layer 111 and aconductive layer 112. Theinsulation layer 111 may be made of silicon dioxide (SiO2), which may be oxidized from silicon. Theconductive layer 112 may be made of metal such as aluminium, and theconductive layer 112 may function as a heat-dissipating layer. - The potential of the
substrate 110 may be operated to be the intermediate value of the maximum potential and the minimum potential among all elements of theLED lighting device 100, such that the potential differences between thesubstrate 110 and the conductive elements above the substrate 110 (for example, thebottom electrode 121 or the top transparent electrodes 142) are not too large. Therefore, the current does not pass through theinsulation layer 111, and thus thesubstrate 110 is electrically insulated from the conductive elements above thesubstrate 110. - The depth of the
recess 113 is in a range from about 5 μm to about 50 μm. People having ordinary skill in the art can make proper modifications to the depth of therecess 113 depending on the actual application. - The angle between the
bottom surface 114 and the taperedside surface 115 is in a range from about 120° to about 160°, and the angle between thebottom surface 117 and the taperedside surface 118 is in a range from about 120° to about 160° as well. If thesubstrate 110 is made of silicon, and therecess 113 is formed by a wet etching process, the angle between thebottom surface 114 and the taperedside surface 115 is about 125.3°. - The
bottom electrodes bottom electrodes bottom electrodes - The
bottom electrodes vertical LEDs vertical LEDs bottom electrodes vertical LEDs - The
vertical LEDs vertical LED 400 further includes afirst semiconductor layer 410 proximal to the toptransparent electrode 144 and asecond semiconductor layer 420 proximal to thebottom electrode 126. Thevertical LED 200 further includes afirst semiconductor layer 210 distal to thebottom electrode 121 and asecond semiconductor layer 220 proximal to thebottom electrode 121. The first semiconductor layers 210 and 410 of thevertical LEDs vertical LEDs - More specifically, the first semiconductor layers 210 and 410 of the
vertical LEDs vertical LEDs vertical LEDs vertical LEDs - The first semiconductor layers 210 and 410 and the second semiconductor layers 220 and 420 can be made of gallium nitride (GaN). People having ordinary skill in the art can make proper modifications to the material of the first semiconductor layers 210 and 410 and the second semiconductor layers 220 and 420 depending on the actual application.
- The
vertical LED 200 further includes anactive layer 230 disposed between thefirst semiconductor layer 210 and thesecond semiconductor layer 220. Thevertical LED 400 further includes anactive layer 430 disposed between thefirst semiconductor layer 410 and thesecond semiconductor layer 420. Specifically, theactive layer - The bottom transparent isolation layers 130 and 131 have a high refractive index. Specifically, the refractive index of the bottom transparent isolation layers 130 and 131 is greater than 1.5. The bottom transparent isolation layers 130 and 131 may reduce total reflection in the
vertical LEDs vertical LEDs - The top
transparent electrode 144 is made of indium tin oxide (ITO). People having ordinary skill in the art can make proper modifications to the material of the toptransparent electrode 144 depending on the actual application. - The
LED lighting device 100 further includes at least onevertical LED 300, at least onevertical LED 500, and a toptransparent electrode 142. Thevertical LED 300 is disposed in therecess 113 and on thebottom electrode 121. Thevertical LED 500 is disposed in therecess 116 and on thebottom electrode 126. The bottomtransparent isolation layer 130 has anopening 134 therein to expose at least a part of thevertical LED 300. The bottomtransparent isolation layer 131 has anopening 138 therein to expose at least a part of thevertical LED 500. The toptransparent electrode 144 is further electrically connected to thevertical LED 500 through theopening 138, and the toptransparent electrode 142 is electrically connected to thevertical LEDs openings bottom electrodes 121 and the toptransparent electrodes 142 cooperate to electrically connect thevertical LEDs bottom electrodes 126 and the toptransparent electrodes 144 cooperate to electrically connect thevertical LEDs - The
vertical LEDs vertical LED 300 includes afirst semiconductor layer 310 proximal to the toptransparent electrode 142 and asecond semiconductor layer 320 proximal to thebottom electrode 121, and thevertical LED 500 includes afirst semiconductor layer 510 proximal to the toptransparent electrode 144 and asecond semiconductor layer 520 proximal to thebottom electrode 126. The first semiconductor layers 210, 310, 410, and 510 of thevertical LEDs vertical LEDs - Similarly, the
substrate 110 may further have additional recesses, and theLED lighting device 100 may further includes additional bottom electrodes, top transparent electrodes, and vertical LEDs.FIG. 3A is a schematic top view of theLED lighting device 100 according to one embodiment of this disclosure. For example, as shown inFIG. 3A , the LEDlight device 100 further includesbottom electrodes transparent electrodes vertical LEDs vertical LEDs bottom electrodes transparent electrodes vertical LEDs bottom electrode 191 and the toptransparent electrode 146. Thevertical LEDs bottom electrode 192 and the toptransparent electrode 148. - The
LED lighting device 100 further includes aninput electrode 710 and anoutput electrode 720 respectively electrically connected to the toptransparent electrodes input electrode 710 and theoutput electrode 720 are single-layer structures or multi-layer structures, and theinput electrode 710 and theoutput electrode 720 are made of conductive materials. For example, theinput electrode 710 and theoutput electrode 720 are single-layer structures made of silver, double-layer structures made of copper and silver, or triple-layer structures made of copper, titanium, and silver. In addition, theinput electrode 710, theoutput electrode 720, and thebottom electrodes - Specifically, the shape of the
substrate 100 is a cuboid, and the bottom electrodes, top transparent electrodes, and vertical LEDs are disposed in a line. Embodiments of this disclosure are not limited thereto. The shape of thesubstrate 100 may be a cylindrical column, a triangular prism, a cube, a cuboid, a hexagonal column, an octagonal column, or a polygon column.FIG. 3B is a schematic top view of the LED lighting device according to another embodiment of this disclosure. For example, as shown inFIG. 3B , the shape of thesubstrate 100 is a cylindrical column, and the bottom electrodes, top transparent electrodes, and vertical LEDs are disposed in a ring. - Similarly, the shape of the
substrate 100 may be a cylindrical column, a triangular prism, a cube, a cuboid, a hexagonal column, an octagonal column, or a polygon column. The shape of thebottom electrode LEDs transparent electrodes input electrode 710 and theoutput electrode 720 may be a cylindrical column, a cube, a cuboid, a hexagonal column, an octagonal column, or a polygon column. - As shown in
FIG. 1 , the firstvertical LED 200 further includes a patterneddielectric layer 240. The patterneddielectric layer 240 is disposed between thefirst semiconductor layer 210 and the toptransparent electrode 142. The patterneddielectric layer 240 covers an edge portion of thefirst semiconductor layer 210 and has anopening 242. The toptransparent electrode 142 is electrically connected to thevertical LED 200 through theopening 242. The function of the patterneddielectric layer 240 is to prevent the surface recombination of thevertical LED 200 and to prevent the leakage of the current through the side surface of thevertical LED 200, thereby enhancing the luminous efficiency of thevertical LED 200. - Specifically, the material of the patterned
dielectric layer 240 is silicon nitride or silicon dioxide. The patterning of the patterneddielectric layer 240 is performed by developing and etching process or screen printing and etching process. - The
vertical LED 200 further includes aguard ring 250 disposed on the patterneddielectric layer 240. The function of theguard ring 250 is to prevent electrostatic discharge (ESD) and to make the current in the toptransparent electrode 142 spread and evenly enter thevertical LED 200. - Specifically, the
guard ring 250 is made of metal, such as silver. The patterning of theguard ring 250 is performed by developing and etching process or screen printing and etching process. If the shapes of the horizontal cross-sections of the patterneddielectric layer 240 and theguard ring 250 are the same, the patterning of theguard ring 250 may be used as the mask of the patterneddielectric layer 240. -
FIGS. 4A to 4C are horizontal cross-sectional views of the patterneddielectric layer 240 according to different embodiments of this disclosure. As shown inFIGS. 4A to 4C , the shape of the horizontal cross-section of the patterneddielectric layer 240 may be a ring, a ring with a cross, or a plurality of rings with a cross. The shape of the horizontal cross-section ofguard ring 250 may be similar to the shape of the horizontal cross-section of the patterneddielectric layer 240. Specifically, the shape of the horizontal cross-section ofguard ring 250 may be a ring, a ring with a cross, or a plurality of rings with a cross. - As shown in
FIG. 1 , other vertical LEDs such asvertical LED vertical LED 200 as well. - Specifically, the top
transparent electrodes transparent electrodes - The
substrate 110 further has atop surface 119 between therecess 113 and therecess 116, and a part of thebottom electrode 121 is disposed on thetop surface 119. The bottomtransparent isolation layer 130 covers thebottom electrode 121 and exposes the part of thebottom electrode 121 disposed on thetop surface 119. Therefore, the toptransparent electrode 144 and thebottom electrode 121 make an electrical contact with each other on thetop surface 119, such that the part of thebottom electrode 121 disposed on thetop surface 191 functions as an auxiliary electrode of the toptransparent electrode 144, and thebottom electrode 121 is electrically isolated from the toptransparent electrode 142 by the bottomtransparent isolation layer 130. The function of the auxiliary electrode is to enhance the conductivity of the toptransparent electrode 144. - The
LED lighting device 100 further includes at least one toptransparent isolation layer 160 covering at least one of therecesses vertical LEDs transparent isolation layer 160 has a high refractive index. Specifically, the refractive index of the top transparent isolation layer is greater than 1.5. The refractive index of the bottomtransparent isolation layer transparent isolation layer 160. The toptransparent isolation layer 160 may reduce total reflection in the LEDlight device 100 and thus enhance the light extraction of thevertical LEDs - Specifically, a part of the top
transparent isolation layer 160 covers therecess 113 and thevertical LED transparent isolation layer 160 covers therecess 116 and thevertical LEDs - In some embodiments, the number of the top transparent isolation layers 160 is at least two, and the top transparent isolation layers 160 are stacked. The refractive indices of the top transparent isolation layers 160 increase toward the
vertical LEDs vertical LEDs - The material of the top
transparent isolation layer 160 may be the same as the material of the bottomtransparent isolation layer 130. People having ordinary skill in the art can make proper modifications to the material of the toptransparent isolation layer 160 depending on the actual application. - The
LED lighting device 100 further includes aphosphor layer 170 disposed on the toptransparent isolation layer 160 covering at least one of therecesses vertical LEDs - Specifically, a part of the
phosphor layer 170 covers therecess 113 and thevertical LEDs phosphor layer 170 covers therecess 116 and thevertical LEDs - The refractive index of the bottom
transparent isolation layer 130 is greater than or equal to the refractive index of thephosphor layer 170, and the refractive index of the toptransparent isolation layer 160 is greater than or equal to the refractive index of thephosphor layer 170. - The top
transparent isolation layer 160 is shaped to allow optical path lengths from at least one of thevertical LEDs phosphor layer 170 to be substantially the same. Specifically, the toptransparent isolation layer 160 is substantially dome shaped. Therefore, the color of the light passing thephosphor layer 170 is even. The situation that the color of some of the light passing thephosphor layer 170 is yellowish and the color of the other of the light passing thephosphor layer 170 is bluish is avoided. - The
LED lighting device 100 further includes anencapsulation layer 180 disposed on thephosphor layer 170. Theencapsulation layer 180 covers at least one of therecesses vertical LEDs encapsulation layer 180 covers therecess 113 and thevertical LEDs encapsulation layer 180 covers therecess 116 and thevertical LEDs FIG. 5 is a schematic cross-sectional view of theLED lighting device 100 according to another embodiment of this disclosure. As shown inFIG. 5 , theencapsulation layer 180 integrally covers therecesses vertical LEDs -
FIG. 6 is a schematic cross-sectional view of theLED lighting device 100 according to another embodiment of this disclosure. As shown inFIG. 6 , the toptransparent isolation layer 160 integrally covers therecesses vertical LEDs phosphor layer 170 integrally covers therecesses vertical LEDs encapsulation layer 180 integrally covers therecesses vertical LEDs - Specifically, the
vertical LEDs vertical LEDs top surface 119 of thesubstrate 110. Therefore, lateral light emitted from thevertical LEDs bottom electrodes recesses LED lighting device 100 is optimized. - As shown in
FIG. 1 , the number of the vertical LEDs in therecess 113 and the number of the vertical LEDs in therecess 116 are the same. Embodiments of this disclosure are not limited thereto. In some embodiment, the number of the vertical LEDs in therecess 113 and the number of the vertical LEDs in therecess 116 are different. For example, in some embodiments, theLED lighting device 100 does not include thevertical LED 300. In some embodiments, theLED lighting device 100 further includes at least one additional vertical LED in therecess 113. -
FIG. 7 is a schematic cross-sectional view of theLED lighting device 100 according to another embodiment of this disclosure. In the embodiment, thebottom electrode 121 is not disposed on thetop surface 119, and a part of the toptransparent electrode 144 is disposed on the taperedside surface 115. The toptransparent electrode 144 and thebottom electrode 121 make an electrical contact with each other on the taperedside surface 115. - As shown in
FIGS. 1, 2, 5, 6, and 7 , theLED lighting device 100 includes only one substrate, i.e., thesubstrate 110, and all other structures are stacked on thesubstrate 110. Therefore, the manufacturing processes of theLED lighting device 100 become easy, and problems such as alignment difficulty are avoided, such that the process yield is enhanced and the production cost is lowered. - By electrically connecting the vertical LEDs in series, the
LED lighting device 100 can achieve high power and high luminous efficiency by electrically connecting to a power supply with high voltage. In addition, the current passing the vertical LEDs needs not to be large to achieve high power and high luminous efficiency. Therefore, the lifetime of the vertical LEDs may be longer, and cooling may not become a problem. - All the features disclosed in this specification (including any accompanying claims, abstract, and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Thus, unless expressly stated otherwise, each feature disclosed is one example only of a generic series of equivalent or similar features.
- Any element in a claim that does not explicitly state “means for” performing a specified function, or “step for” performing a specific function, is not to be interpreted as a “means” or “step” clause as specified in 35 U.S.C. §112, 6th paragraph. In particular, the use of “step of” in the claims herein is not intended to invoke the provisions of 35 U.S.C. §112, 6th paragraph.
Claims (25)
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PCT/CN2015/083508 WO2016065923A1 (en) | 2014-10-31 | 2015-07-08 | Light-emitting diode lighting device |
CN201510520559.1A CN105570691B (en) | 2014-10-31 | 2015-08-21 | Light-emitting diode lighting device |
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JP6205894B2 (en) | 2012-07-04 | 2017-10-04 | 日亜化学工業株式会社 | Package molded body for light emitting device and light emitting device using the same |
TWI467528B (en) * | 2013-10-30 | 2015-01-01 | Au Optronics Corp | Light emitting diode display panel and method of fabricating the same |
-
2014
- 2014-10-31 US US14/529,162 patent/US9343633B1/en active Active
-
2015
- 2015-07-08 EP EP15855413.9A patent/EP3213353B1/en active Active
- 2015-07-08 WO PCT/CN2015/083508 patent/WO2016065923A1/en active Application Filing
- 2015-08-21 CN CN201510520559.1A patent/CN105570691B/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109237338A (en) * | 2018-08-29 | 2019-01-18 | 嘉兴美斯克电气科技有限公司 | A kind of LED light strip for toilet wall folder |
CN109237338B (en) * | 2018-08-29 | 2021-02-09 | 江门市东达丰照明科技有限公司 | LED lamp strip for toilet wall clip |
Also Published As
Publication number | Publication date |
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EP3213353A4 (en) | 2018-04-25 |
CN105570691B (en) | 2018-10-19 |
US9343633B1 (en) | 2016-05-17 |
WO2016065923A1 (en) | 2016-05-06 |
EP3213353B1 (en) | 2020-04-08 |
CN105570691A (en) | 2016-05-11 |
EP3213353A1 (en) | 2017-09-06 |
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