US20160126065A1 - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

Info

Publication number
US20160126065A1
US20160126065A1 US14/934,091 US201514934091A US2016126065A1 US 20160126065 A1 US20160126065 A1 US 20160126065A1 US 201514934091 A US201514934091 A US 201514934091A US 2016126065 A1 US2016126065 A1 US 2016126065A1
Authority
US
United States
Prior art keywords
high frequency
frequency antenna
antenna
plasma
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US14/934,091
Other languages
English (en)
Inventor
Jun Yamawaku
Tatsuo Matsudo
Chishio Koshimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOSHIMIZU, CHISHIO, MATSUDO, TATSUO, YAMAWAKU, JUN
Publication of US20160126065A1 publication Critical patent/US20160126065A1/en
Priority to US16/730,861 priority Critical patent/US11443920B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present invention relates to a plasma processing apparatus which performs a process on a substrate by exciting a processing gas.
  • a plasma process such as an etching process, a film forming process or the like which uses plasma of a processing gas.
  • a plasma process such as an etching process, a film forming process or the like which uses plasma of a processing gas.
  • it is required to properly control the plasma density distribution to become appropriate in a plane direction of a substrate depending on a process type, specifically based on a structure in a processing chamber or in consideration of in-plane deviation of the substrate in a post-process. Therefore, the requirement is not limited to making the plasma density distribution uniform in an entire plane of the substrate and may include making the plasma density distribution different between a central portion and a periphery portion of the substrate.
  • Japanese Patent Application Publication No. 5227245 discloses a configuration in which a coil-shaped inner antenna and a coil-shaped outer antenna formed concentric to the inner antenna are provided as a high frequency antenna which outputs a high frequency, and each of the antennas resonates at a frequency of 1 ⁇ 2 wavelength of the high frequency.
  • a circular electric field is each formed by each antenna, and thus in-plane distribution of the plasma density can be very delicately adjusted.
  • a high frequency power supply needs to be provided at each of the inner antenna and the outer antenna.
  • Japanese Patent Application Publication No. 2011-119659 discloses a plasma processing apparatus which includes a planar coil-shaped radio frequency (RF) antenna for generating a plasma, and a floating coil for performing an electromagnetic field correction with respect to a RF magnetic field generated from the RF antenna, the floating coil provided at a position where it can be combined with the RF antenna by electromagnetic induction.
  • RF radio frequency
  • Japanese Patent Application Publication No. 2011-119659 does not disclose a technique for adjusting the distribution of high frequency power to monopole antennas connected in parallel to each other with respect to a common high frequency power supply.
  • the present invention provides a technique for adjusting in-plane distribution of plasma density in a plasma processing apparatus which performs a process on a substrate by generating plasma by using a high frequency antenna.
  • a plasma processing apparatus for performing a plasma process on a substrate in a processing chamber, the apparatus including: a mounting table on which the substrate is mounted, the mounting table being provided in the processing chamber; a processing gas supply unit configured to supply a processing gas into the processing chamber; an exhaust unit configured to vacuum-exhaust an inside of the processing chamber; a plasma generation unit arranged opposite to the mounting table through a dielectric window, the plasma generation unit including a high frequency antenna for converting the processing gas supplied into the processing chamber into plasma by an inductive coupling; and a shield member that surrounds a space where the high frequency antenna is arranged.
  • the plasma generation unit includes: a first high frequency antenna formed of a vortex coil having open ends at an inner side and an outer side, and including, at a central portion of a line between the open ends, a supply point of a high frequency power supplied from a high frequency power supply and a grounding point grounded through a capacitor, the first high frequency antenna having a resonant frequency corresponding to a frequency of the high frequency power, the first high frequency antenna further including a first high frequency antenna element formed of a portion of the vortex coil from one open end at the inner side or the outer side to the supply point of the high frequency power and a second high frequency antenna element formed of a portion of the vortex coil from the other open end to the grounding point; a second high frequency antenna formed of a planar vortex coil disposed between the first high frequency antenna element and the second high frequency antenna element when the first high frequency antenna is viewed from above; and an impedance adjustment unit including a variable capacitor connected to both ends of the second high frequency antenna and a capacitor connected to the second high frequency antenna element
  • the circuit viewed from the high frequency power supply toward the first high frequency antenna is configured to have a first resonant frequency and a second resonant frequency depending on adjustment of the impedance adjustment unit when the frequency of the high frequency power is changed.
  • FIG. 1 is a vertical sectional side view of a plasma processing apparatus in accordance with an embodiment of the present invention
  • FIG. 2 is a schematic view of a plasma generation unit provided in the plasma processing apparatus
  • FIGS. 3A and 3B are explanatory views of a helical antenna having no absorbing coil
  • FIG. 4 is a schematic view showing a modified example of the plasma generation unit
  • FIG. 5 is a frequency characteristic graph of the plasma generation unit
  • FIG. 6 is an explanatory view showing a density distribution of plasma generated by the plasma generation unit.
  • FIGS. 7A to 7C are explanatory views showing states of plasma generated by the plasma generation unit.
  • FIG. 1 shows an example in which a plasma processing apparatus of the present invention is applied to a plasma etching apparatus for performing an etching of a wafer W that is a substrate to be processed.
  • the plasma etching apparatus includes a grounded processing chamber 10 made of a conductive material such as aluminum, stainless steel or the like.
  • a loading/unloading port 101 that is opened and closed by a gate valve 102 and through which the wafer W is loaded and unloaded is provided at a sidewall of the processing chamber 10 .
  • a disk-shaped susceptor 21 serving as a mounting table on which a wafer W to be processed is mounted, and also serving as an electrode for attracting ions in plasma (an electrode for bias).
  • the susceptor 21 is supported by a cylindrical susceptor support 22 made of an insulating material and the susceptor 21 is connected to a high frequency power supply 30 for bias through a power feed rod 32 and a matching unit 31 .
  • the high frequency power supply 30 supplies a high frequency power of, e.g., 13.56 MHz.
  • An electrostatic chuck 23 for holding the wafer W with an electrostatic attractive force is provided on the top of the susceptor 21 .
  • a focus ring 24 which surrounds the periphery of the wafer W is arranged at the outer side of the electrostatic chuck 23 in a diametric direction thereof.
  • a coolant path 212 through which a coolant, e.g., cooling water flows to control a temperature of the wafer W is provided in the susceptor 21 .
  • the coolant path 212 is connected to a chiller unit (not shown) through a line 213 , and temperature-controlled cooling water is supplied from the chiller unit.
  • a gas supply line 214 through which a heat transfer gas, e.g., He gas is supplied to between the electrostatic chuck 23 and the wafer W is provided in the susceptor 21 .
  • the gas supply line 214 penetrates through the electrostatic chuck 23 and a leading end of the gas supply line 214 is opened at the top surface of the electrostatic chuck 23 .
  • elevating pins for transferring and receiving the wafer W to and from an external transfer arm (not shown) is provided to vertically penetrate through the susceptor 12 and protrude beyond and retreat below the surface of the electrostatic chuck 23 .
  • An annular baffle plate 11 formed of a perforated plate having a plurality of through-holes is provided between the susceptor support 22 and an inner wall surface of the processing chamber 10 .
  • an exhaust port 12 is formed below the baffle plate 11 .
  • the exhaust port 12 is connected to a vacuum exhaust mechanism 14 through an exhaust line 13 .
  • the exhaust port 12 , the exhaust line 13 and the vacuum exhaust mechanism 14 constitute an exhaust unit.
  • a processing gas supply passageway 41 is formed, above the loading/unloading port 101 , along the circumferential direction of the sidewall.
  • a plurality of processing gas supply holes 42 is formed at intervals and communicates with the processing gas supply passageway 41 .
  • a processing gas supply mechanism 44 for supplying through a processing gas supply line 43 a processing gas that is an etching gas such as CF 4 gas, C 4 F S gas, chlorine gas or the like.
  • the processing gas supply passageway 41 , the processing gas supply holes 42 , the processing gas supply line 43 and the processing gas supply mechanism 44 constitute a processing gas supply unit of the present embodiment.
  • a dielectric window 53 formed of a dielectric such as quartz plate or the like is provided airtightly at a ceiling portion of the processing chamber 10 .
  • a space above the dielectric window 53 is covered with a shield box 51 that is a container made of a conductive material.
  • a space surrounded by the dielectric window 53 and the shield box 51 becomes an antenna chamber 52 which accommodates antennas 541 and 542 for generating plasma.
  • the shield box 51 arranged on the processing chamber 10 is grounded through the processing chamber 10 .
  • a plasma generation unit including antennas 541 and 542 for converting a processing gas into plasma.
  • a helical antenna 541 that is a first high frequency antenna is formed of a planar vortex coil in which a conducting wire is wound in the same plane in a vortex shape (in FIG. 2 , in a counterclockwise direction when viewed from above).
  • FIG. 3A shows a schematic view of the helical antenna 541 in which variable capacitors 62 to 64 for adjusting impedance, which will be described later, are omitted.
  • the helical antenna 541 has a configuration in which an inner antenna element 541 a and an outer antenna element 541 b are connected to each other.
  • the inner antenna element 541 a forms an inner part of the vortex coil
  • the outer antenna element 541 b is arranged outward of the inner antenna element 541 a when viewed from above and forms an outer part of the vortex coil.
  • an inner end of the inner antenna element 541 a is referred to as one end portion, the one end portion is an open end and the other end portion connected to the outer antenna element 541 b is connected to the high frequency power supply 61 . Further, if an outer circumferential end of the outer antenna element 541 b is referred to as one end portion, the one end portion is an open end and the other end portion connected to the inner antenna element 541 a is grounded (through the shield box 51 in FIG. 3A ).
  • the inner antenna element 541 a and the outer antenna element 541 b each have a line length of (( ⁇ /4)+n ⁇ ( ⁇ /2)) (where n is a natural number including 0) with respect to a wavelength ⁇ of high frequency power having a frequency f applied from the high frequency power supply 61 .
  • a line length of the inner antenna element 541 a and a line length of the outer antenna element 541 b appear different from each other, but actually, they have the same line length satisfying the above-mentioned requirement.
  • connection portion 541 c that is a conducting wire forming a part of the vortex coil.
  • actual line length of each of the antenna elements 541 a and 541 b may not be strictly equal to ⁇ /4.
  • a line length of the monopole antenna is set to a value of an electromagnetic wavelength multiplied by a fractional shortening.
  • the fractional shortening varies depending on how to wind the vortex coil and depending on the surrounding circumstances in which the antenna elements 541 a and 541 b are arranged.
  • the expression “the antenna elements 541 a and 541 b each have a line length corresponding to ⁇ /4” includes a case that the line length is set to about ⁇ /4 in consideration of the effect of the fractional shortening and as a result, the antenna elements 541 a and 541 b each have a resonant frequency corresponding to the wavelength ⁇ .
  • a distance h from the inner and outer antenna elements 541 a and 541 b to the shield box 51 that is a grounded plate becomes a variable for adjusting the fractional shortening of the inner and outer antenna elements 541 a and 541 b that are the monopole antenna. Therefore, by adjusting the distance h, resonant frequencies of the inner and outer antenna elements 541 a and 541 b can be changed.
  • connection portion 541 c functions as a matching circuit.
  • the high frequency power is efficiently supplied at a resonant frequency to the inner and cuter antenna elements 541 a and 541 b.
  • a high frequency magnetic field is formed in the processing chamber 10 through the dielectric window 53 , and the processing gas is converted into plasma by a high frequency electric field induced by the formation of the magnetic field.
  • the helical antenna 541 constitutes the first high frequency antenna of the present embodiment. Further, the inner antenna element 541 a constitutes a first high frequency antenna element and the outer antenna element 541 b constitutes a second high frequency antenna element.
  • plasma is formed in the processing chamber 10 by using the helical antenna 541 as a parallel-connected monopole antenna. Further, in the helical antenna, a distribution ratio of high frequency power to the inner and outer antenna elements 541 a and 541 b is fixed, so that it is not possible to control the plasma density distribution on the wafer W mounted on the susceptor 21 .
  • the present inventors have found that it is possible to change the distribution of high frequency power to the inner and outer antenna elements 541 a and 541 b by arranging an absorbing antenna (absorbing coil) 542 of an electrically-floated state between the inner antenna element 541 a and the outer antenna element 541 b that are a parallel-connected monopole antenna to adjust impedance.
  • the other end portion of the inner antenna element 541 a connected to the high frequency power supply 61 and the other end portion of the outer antenna element 541 b connected to a ground are arranged offset in a diametric direction of the vortex.
  • the inner and the outer antenna elements 541 a and 541 b are arranged at separate positions in the diametric direction and thus a space for disposing the absorbing antenna 542 is formed therebetween.
  • the other end portions of the inner and the outer antenna elements 541 a and 541 b are connected to each other by the connection portion 541 c having a line extending in the diametric direction.
  • the high frequency power supply 61 has, e.g., a center frequency of 27 MHz and can change the frequency in a range of ⁇ 1 MHz depending on the impedance adjustment.
  • a first variable capacitor 62 connected in series to the high frequency power supply 61 is provided between the high frequency power supply 61 and the inner antenna element 541 a.
  • a second variable capacitor 63 connected in parallel to the high frequency power supply 61 is provided between the grounding terminal of the high frequency power supply 61 and the first variable capacitor 62 .
  • the other end of the outer antenna element 541 b is grounded through a third variable capacitor 64 , instead of the shield box 51 shown in FIG. 3A .
  • the first to third variable capacitors 62 to 64 (variable capacitor group) described above constitute an impedance adjustment unit of the present embodiment.
  • the first to third variable capacitors 62 to 64 constituting the impedance adjustment unit are mainly used as a matching circuit for adjusting reflectivity.
  • each of the antenna elements 541 a and 541 b has a line length corresponding to ⁇ /4.
  • the numbers of turns of winding of the antenna elements 541 a and 541 b may be appropriately adjusted depending on the areas of arrangement regions of the antenna elements 541 a and 541 b and the like.
  • the helical antenna 541 has open ends at the inner side and the outer side and is formed of a vortex coil having a resonant frequency corresponding to a frequency of the high frequency power supplied from the high frequency power supply 61 . Moreover, a high frequency supply point from the high frequency power supply 61 and a ground point grounded through the third variable capacitor 64 are provided at a central portion of the line between two open ends.
  • the inner antenna element 541 a from the open end at the inner side to the high frequency supply point corresponds to the first high frequency antenna element
  • the outer antenna element 541 b from the open end at the outer side to the ground point corresponds to the second high frequency antenna element.
  • the arrangements of the first and second high frequency antenna elements are not limited to the above example.
  • the outer antenna element 541 b from the the open end at the outer side to the high frequency supply point corresponds to the first high frequency antenna element
  • the inner antenna element 541 a from the open end at the inner side to the ground point corresponds to the second high frequency antenna element.
  • the absorbing antenna 542 that is a second high frequency antenna for controlling distribution of the high frequency power to the inner and outer antenna elements 541 a and 541 b.
  • the absorbing antenna 542 is formed of an annular coil which is formed of a conducting wire wound in a round ring shape in the same plane.
  • a coil usable as the absorbing antenna 542 in the present embodiment is not limited to the annular coil having one turn of winding.
  • a planar vortex coil formed of a conducting wire wound in a vortex shape (e.g., in a clockwise direction when viewed from above) of which the number of turns of winding is larger than one.
  • the “planar vortex coil” mentioned herein includes both of an annular coil having one turn of winding and a vortex coil having two or more turns of winding.
  • One end and the other end of the absorbing antenna 542 are both connected to a fourth variable capacitor 65 .
  • a circuit formed by the absorbing antenna 542 and the fourth variable capacitor 65 does not have a contact point with a circuit including the absorbing antenna 542 and the third variable capacitor 64 , and is in an electrically-floated state.
  • the fourth variable capacitor 65 forms a part of the impedance adjustment unit of the plasma generation unit.
  • the fourth variable capacitor 65 forming the impedance adjustment unit is mainly used in adjustment of a resonant frequency.
  • a distribution ratio of the high frequency power to the inner and outer antenna elements 541 a and 541 b can be controlled by, e.g., adjusting reflectivity in the connection portion 541 c.
  • the fourth variable capacitor 65 functions to adjust a level and direction of current flowing in the absorbing antenna 542 .
  • Levels of current flowing in the inner and outer antenna elements 541 a and 541 b are slightly different from each other. Therefore, the plasma density distribution formed by the inner and outer antenna elements 541 a and 541 b can be changed by interaction with the current flowing in the absorbing antenna 542 .
  • the absorbing antenna 542 When using the absorbing antenna 542 described above, it is possible to control the plasma density distribution formed in the processing chamber 10 by changing the high frequency power distributed to the absorbing antenna 542 , and the inner antenna element 541 a and the outer antenna element 541 b included in the helical antenna 541 connected to the common high frequency power supply 61 .
  • variable capacitors 62 to 65 there is a method of, e.g., controlling reflections at the first to third variable capacitors 62 to 64 while changing a resonant frequency by changing a capacity of the fourth variable capacitor 64 provided at the side of the absorbing antenna 542 .
  • the configuration of the impedance adjustment unit is not limited to the above example as long as the positions at which the two resonant frequencies appear can be adjusted.
  • the two resonant frequencies may be adjusted by changing the distance.
  • the distance may be changed by providing a height adjustment mechanism for the helical antenna 541 including an elevating mechanism.
  • a plate which has an elevating mechanism and is electrically connected to the shield box 51 , may be installed and a distance between the plate and the helical antenna 541 may be changed.
  • the control unit 7 includes a computer having a CPU (central processing unit) (not shown) and a storage unit (not shown).
  • the storage unit stores programs including step (command) groups for the operation of the plasma etching apparatus, i.e., operations such as loading and unloading of the wafer W into the processing chamber 10 , a vacuum exhaust, adjustment of a processing gas supply amount, supply of the high frequency power from the high frequency power supply 61 , a capacity setting of the impedance adjustment unit, and the like.
  • the programs are stored in a storage medium, e.g., hard disk, compact disk, magnet optical disk, memory card or the like and are installed in the computer therefrom.
  • the elevating pins are raised to receive the wafer W from the transfer arm.
  • the gate valve 102 is closed and the elevating pins are lowered to mount the wafer W on the electrostatic chuck 23 .
  • the wafer W When a direct current power is supplied to the electrostatic chuck 23 , the wafer W is held on the electrostatic chuck 23 . At this time, a temperature-controlled coolant flows through the coolant path 212 , and a temperature of the wafer W is controlled through a heat transfer gas supplied from the gas supply line 214 to the backside of the wafer W.
  • the inside of the processing chamber 10 is vacuum-exhausted through the exhaust port 12 by the vacuum exhaust mechanism 14 .
  • a processing gas is supplied from the processing gas supply mechanism 44 into the processing chamber 10 while the vacuum-exhaust is continuously performed by the vacuum exhaust mechanism 14 . Further, high frequency power is supplied from the high frequency power supply 61 to the helical antenna 541 . Furthermore, high frequency power for bias is supplied from the high frequency power supply 30 to the susceptor 21 .
  • ICP inductively coupled plasma
  • a frequency of the high frequency power supplied from the high frequency power supply 61 to the helical antenna 541 and capacities of the first to fourth variable capacitors 62 to 65 are previously set by a processing recipe and the like. Accordingly, under the inner antenna element 541 a, the outer antenna element 541 b and the absorbing antenna 542 , a desired plasma density distribution corresponding to the set values is formed, and further, density distribution of an active species such as ions of the processing gas and the like is formed corresponding to the plasma density distribution.
  • the active species thus obtained is attracted to the wafer W on the susceptor 21 by an act of the bias power and reaches the surface of the wafer W to perform an etching process. Since the density distribution of the active species is formed corresponding to the above plasma density distribution, the progress of the etching process can be controlled in the plane of the wafer W.
  • the plasma density distribution formed by the inner antenna element 541 a, the outer antenna element 541 b and the absorbing antenna 542 is not limited to a case where the plasma density distribution is controlled to become non-uniform in the plane of the wafer W.
  • the distribution of the high frequency power may be controlled between the antenna elements 541 a and 541 b by using the absorbing antenna 542 .
  • the supply of the processing gas through the processing gas supply hole 42 and the supply of high frequency power from the high frequency power supplies 61 and 30 are stopped.
  • a pressure in the processing chamber 10 is controlled.
  • the gate valve 102 is opened and in the reverse order to the loading of the wafer W, the transfer arm receives the wafer W to unload the processed wafer W from the processing chamber 10 .
  • the absorbing antenna (the second high frequency antenna) 542 is arranged between the inner and outer antenna elements 541 a and 541 b included in the helical antenna (the first high frequency antenna) 541 , and the impedance adjustment unit is adjusted such that the antenna elements 541 a and 541 b have different resonant frequencies from each other. By doing so, distribution of high frequency power supplied to the high frequency antenna elements 541 a and 541 b can be changed. As a result, the plasma density distribution formed in the processing chamber 10 is changed and thus the progress of processing the wafer W can be adjusted in the plane of the wafer W.
  • the arrangement of the helical antenna 541 and the absorbing antenna 542 is not limited to a case where they are positioned at the same height.
  • the absorbing antenna 542 may be positioned above the helical antenna 541 .
  • the absorbing antenna 542 may be positioned under the helical antenna 541 .
  • the absorbing antenna 542 may be disposed above or under the helical antenna 541 .
  • the absorbing antenna 542 may be disposed in the processing chamber 10 .
  • the absorbing antenna 542 may be accommodated in a cover made of a conductor of the same material as the absorbing antenna 542 , a dielectric such as quartz, alumina or the like, or a resin such as fluorine resin, aromatic polyetherketone resin (e.g., PEEK (polyetheretherketone)) or the like.
  • the inside of the cover is preferably filled with a dielectric or a resin.
  • the metallic processing chamber 10 accommodating the helical antenna 541 also serves as a shield box.
  • the helical antenna 541 and the absorbing antenna 542 are formed of a planar vortex coil.
  • the vortex coil forming the antennas 541 and 542 is not limited to the plane shape.
  • the inner antenna element 541 a formed of a vortex coil having a helix shape extending in an axial direction is provided, and the outer antenna element 541 b having the same helix shape is arranged in a double pipe shape so as to surround the periphery of the inner antenna element 541 a.
  • a high frequency supply point provided at the side of the inner antenna element 541 a and a grounding point provided at the side of the outer antenna element 541 b are connected to each other with the connection portion 541 c therebetween. This forms the helical antenna 541 .
  • the absorbing antenna 542 formed of a vortex coil of a helix shape is inserted into a space between the inner and outer antenna elements 541 a and 541 b arranged in a double pipe shape.
  • the fourth variable capacitor 65 is provided at a position that connects one end and the other end of the helix extending in an axial direction.
  • the plasma generation unit of the present invention has been applied to the plasma etching apparatus.
  • the plasma processing apparatus to which the plasma generation unit can be applied is not limited to the plasma etching apparatus.
  • the plasma generation unit of the present invention can be applied to a plasma ashing apparatus which removes a resist film formed on a wafer W by activating a processing gas such as oxygen gas or the like by using plasma, a plasma film forming apparatus which forms a film by CVD (chemical vapor deposition) or ALD (atomic layer deposition) by reacting a film forming gas (processing gas) activated by plasma on the surface of a wafer W, and the like.
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • a resonanct frequency was examined by changing a frequency of high frequency power supplied from the high frequency power supply 61 by using the plasma generation unit described with reference to FIGS. 1 and 2 .
  • the helical antenna 541 including the inner and outer antenna elements 541 a and 541 b that have two turns of winding and a line length at which a resonant frequency becomes 27 MHz.
  • the helical antenna 541 and the absorbing antenna 542 were arranged at the same height position in the shield box 51 .
  • a reflectivity of a circuit viewed from the high frequency power supply 61 were measured while changing a frequency of the high frequency power supplied from the high frequency power supply 61 in a range of 10 to 60 MHz.
  • the test result is shown in FIG. 5 .
  • the horizontal axis indicates a frequency of the high frequency power and the vertical axis indicates a reflectivity of the high frequency power viewed from the high frequency power supply 61 .
  • frequencies at which reflectivity is sharply reduced were observed at two portions near 27 MHz that is the resonant frequency of the the inner and outer antenna elements 541 a and 541 b.
  • the observed frequencies are resonant frequencies of a circuit including the inner and outer antenna elements 541 a and 541 b.
  • the positions at which the resonant frequencies are generated vary depending on capacities of variable capacitors 62 to 65 .
  • a state of the ICP formed by the inner and outer antenna elements 541 a and 541 b and the absorbing antenna 542 was observed while changing the capacity of the fourth variable capacitor 65 by using the plasma generation unit that is the same as that used in the test 1.
  • a state of plasma was measured while controlling capacities of the first to third variable capacitors 62 to 64 so as to reduce the reflectivity viewed from the high frequency power supply 61 and while gradually increasing capacity of the fourth variable capacitor 65 provided at the absorbing antenna 542 .
  • a frequency of the high frequency power supplied from the high frequency power supply 61 was changed in a range of about 27 ⁇ 1 MHz.
  • the state of plasma was observed by the measurement of plasma density distribution and photography (visual observation).
  • FIG. 6 shows plasma density distribution viewed in a diametric direction of the wafer W.
  • the horizontal axis indicates a distance in the diametric direction from a position corresponding to the center of the wafer W
  • the vertical axis indicates a value of an electron density Na standardized by a maximum value NeMax of the electron density.
  • a black circle plot indicates a state of the smallest capacity of the fourth variable capacitor 65
  • an asterisk plot indicates a state of the largest capacity of the fourth variable capacitor 65
  • a cross plot indicates an intermediate state of the two previous conditions of the fourth variable capacitor 65 .
  • FIG. 7A represents when the capacity of the fourth variable capacitor 65 is the smallest
  • FIG. 7A represents when the capacity of the fourth variable capacitor 65 is the smallest
  • FIG. 7B represents when the capacity of the fourth variable capacitor 65 is intermidiate.
  • FIG. 7C shows a result of examining an expanded state of plasma in accordance with the adjustment of the other variable capacitors 62 to 64 .
  • a test condition such as the capacity of the fourth variable capacitor 65 and the like is not the same between FIG. 6 and FIGS. 7A to 7C .
  • the plasma generation unit including a circuit having two resonant frequencies by arranging the absorbing antenna 542 of an electrically-floated state between the inner and outer antenna elements 541 a and 541 b which form the monopole antenna connected in parallel to the high frequency power supply 61 . Accordingly, even if only one high frequency power supply 61 is provided, it is possible to control the plasma density distribution.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
US14/934,091 2014-11-05 2015-11-05 Plasma processing apparatus Abandoned US20160126065A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/730,861 US11443920B2 (en) 2014-11-05 2019-12-30 Plasma processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014225230A JP6623511B2 (ja) 2014-11-05 2014-11-05 プラズマ処理装置
JP2014-225230 2014-11-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/730,861 Continuation US11443920B2 (en) 2014-11-05 2019-12-30 Plasma processing apparatus

Publications (1)

Publication Number Publication Date
US20160126065A1 true US20160126065A1 (en) 2016-05-05

Family

ID=55853448

Family Applications (2)

Application Number Title Priority Date Filing Date
US14/934,091 Abandoned US20160126065A1 (en) 2014-11-05 2015-11-05 Plasma processing apparatus
US16/730,861 Active US11443920B2 (en) 2014-11-05 2019-12-30 Plasma processing apparatus

Family Applications After (1)

Application Number Title Priority Date Filing Date
US16/730,861 Active US11443920B2 (en) 2014-11-05 2019-12-30 Plasma processing apparatus

Country Status (4)

Country Link
US (2) US20160126065A1 (enrdf_load_stackoverflow)
JP (1) JP6623511B2 (enrdf_load_stackoverflow)
KR (2) KR101872076B1 (enrdf_load_stackoverflow)
TW (2) TW202013430A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108024436A (zh) * 2016-11-01 2018-05-11 中微半导体设备(上海)有限公司 一种等离子体处理装置
US20190098740A1 (en) * 2017-09-28 2019-03-28 Tokyo Electron Limited Plasma processing apparatus
CN112509900A (zh) * 2019-09-13 2021-03-16 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
US11515119B2 (en) * 2018-07-26 2022-11-29 Y.A.C. Technologies Co., Ltd. Plasma processing device
CN115954255A (zh) * 2017-05-26 2023-04-11 应用材料公司 等离子体反应器、等离子体处理工件的方法
CN115995375A (zh) * 2021-10-20 2023-04-21 细美事有限公司 等离子体处理装置及使用该装置的等离子体处理方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7225058B2 (ja) * 2019-08-19 2023-02-20 株式会社東芝 高周波アンテナ及びプラズマ処理装置
JP2021077451A (ja) * 2019-11-05 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR102735887B1 (ko) * 2021-11-18 2024-12-02 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010052394A1 (en) * 2000-06-15 2001-12-20 Soon-Bin Jung High density plasma processing apparatus
US20020079058A1 (en) * 1997-03-27 2002-06-27 Tomohiro Okumura Method and apparatus for plasma processing
US20040027293A1 (en) * 2000-12-27 2004-02-12 Shoji Miyake Plasma generator
US20040124779A1 (en) * 2002-12-31 2004-07-01 Howald Arthur M. Plasma processor apparatus and method, and antenna
US20110094995A1 (en) * 2009-10-27 2011-04-28 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US20110104902A1 (en) * 2009-10-27 2011-05-05 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US20120190207A1 (en) * 2011-01-25 2012-07-26 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US20120247679A1 (en) * 2011-03-30 2012-10-04 Tokyo Electron Limited Plasma processing apparatus
US20130267098A1 (en) * 2012-03-01 2013-10-10 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
US20150097480A1 (en) * 2012-05-17 2015-04-09 Industry-University Cooperation Foundation Hanyang University Plasma equipment

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6667577B2 (en) * 2001-12-18 2003-12-23 Applied Materials, Inc Plasma reactor with spoke antenna having a VHF mode with the spokes in phase
JP2007149638A (ja) * 2005-10-27 2007-06-14 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置
JP5231308B2 (ja) * 2009-03-31 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置
JP5227245B2 (ja) 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
KR101757922B1 (ko) 2009-10-27 2017-07-14 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP5592098B2 (ja) 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5694721B2 (ja) * 2009-10-27 2015-04-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5800547B2 (ja) * 2011-03-29 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020079058A1 (en) * 1997-03-27 2002-06-27 Tomohiro Okumura Method and apparatus for plasma processing
US20010052394A1 (en) * 2000-06-15 2001-12-20 Soon-Bin Jung High density plasma processing apparatus
US20040027293A1 (en) * 2000-12-27 2004-02-12 Shoji Miyake Plasma generator
US20040124779A1 (en) * 2002-12-31 2004-07-01 Howald Arthur M. Plasma processor apparatus and method, and antenna
US20110094995A1 (en) * 2009-10-27 2011-04-28 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US20110104902A1 (en) * 2009-10-27 2011-05-05 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US20120190207A1 (en) * 2011-01-25 2012-07-26 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US20120247679A1 (en) * 2011-03-30 2012-10-04 Tokyo Electron Limited Plasma processing apparatus
US20130267098A1 (en) * 2012-03-01 2013-10-10 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
US20150097480A1 (en) * 2012-05-17 2015-04-09 Industry-University Cooperation Foundation Hanyang University Plasma equipment

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
hereinafter Yamazawa '679 *
hereinafter Yamazawa '902 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108024436A (zh) * 2016-11-01 2018-05-11 中微半导体设备(上海)有限公司 一种等离子体处理装置
CN115954255A (zh) * 2017-05-26 2023-04-11 应用材料公司 等离子体反应器、等离子体处理工件的方法
US20190098740A1 (en) * 2017-09-28 2019-03-28 Tokyo Electron Limited Plasma processing apparatus
JP2019067503A (ja) * 2017-09-28 2019-04-25 東京エレクトロン株式会社 プラズマ処理装置
JP7002268B2 (ja) 2017-09-28 2022-01-20 東京エレクトロン株式会社 プラズマ処理装置
US11470712B2 (en) * 2017-09-28 2022-10-11 Tokyo Electron Limited Plasma processing apparatus
US11832373B2 (en) 2017-09-28 2023-11-28 Tokyo Electron Limited Plasma processing apparatus
US11515119B2 (en) * 2018-07-26 2022-11-29 Y.A.C. Technologies Co., Ltd. Plasma processing device
TWI803670B (zh) * 2018-07-26 2023-06-01 日商Ｙａｃ科技股份有限公司 電漿處理裝置
CN112509900A (zh) * 2019-09-13 2021-03-16 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN115995375A (zh) * 2021-10-20 2023-04-21 细美事有限公司 等离子体处理装置及使用该装置的等离子体处理方法

Also Published As

Publication number Publication date
KR101872076B1 (ko) 2018-06-27
TWI679672B (zh) 2019-12-11
KR20160053812A (ko) 2016-05-13
KR20180074633A (ko) 2018-07-03
TW202013430A (zh) 2020-04-01
US11443920B2 (en) 2022-09-13
US20200144026A1 (en) 2020-05-07
TW201630030A (zh) 2016-08-16
JP2016091811A (ja) 2016-05-23
JP6623511B2 (ja) 2019-12-25
KR101998520B1 (ko) 2019-07-09

Similar Documents

Publication Publication Date Title
US11443920B2 (en) Plasma processing apparatus
US10325758B2 (en) Plasma processing apparatus
US11470712B2 (en) Plasma processing apparatus
US10937631B2 (en) Plasma processing apparatus and plasma processing method
JP5231308B2 (ja) プラズマ処理装置
CN110752133B (zh) 基板支撑设备及具有基板支撑设备的等离子体处理设备
CN109755091B (zh) 等离子体处理装置
JP2020017445A (ja) プラズマ処理装置
US20080190560A1 (en) Microwave Plasma Processing Apparatus
JP7507620B2 (ja) プラズマ処理装置
KR102820371B1 (ko) 무선 편향 전극을 이용한 플라즈마 발생 장치

Legal Events

Date Code Title Description
AS Assignment

Owner name: TOKYO ELECTRON LIMITED, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YAMAWAKU, JUN;MATSUDO, TATSUO;KOSHIMIZU, CHISHIO;REEL/FRAME:036974/0765

Effective date: 20151027

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION