US20150369682A1 - Physical Quantity Sensor Apparatus, Altimeter, Electronic Apparatus, And Moving Object - Google Patents
Physical Quantity Sensor Apparatus, Altimeter, Electronic Apparatus, And Moving Object Download PDFInfo
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- US20150369682A1 US20150369682A1 US14/734,728 US201514734728A US2015369682A1 US 20150369682 A1 US20150369682 A1 US 20150369682A1 US 201514734728 A US201514734728 A US 201514734728A US 2015369682 A1 US2015369682 A1 US 2015369682A1
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- US
- United States
- Prior art keywords
- physical quantity
- quantity sensor
- diaphragm
- pressure sensor
- sensor apparatus
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
- G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C5/00—Measuring height; Measuring distances transverse to line of sight; Levelling between separated points; Surveyors' levels
- G01C5/06—Measuring height; Measuring distances transverse to line of sight; Levelling between separated points; Surveyors' levels by using barometric means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
- G01L19/0654—Protection against aggressive medium in general against moisture or humidity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/142—Multiple part housings
- G01L19/143—Two part housings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
A physical quantity sensor apparatus includes a physical quantity sensor including a flexurally deformable diaphragm including a pressure receiving surface and a temperature sensor disposed on the pressure receiving surface side of the diaphragm to be spaced apart from the diaphragm. The pressure sensor includes a hollow section, which is a pressure reference chamber, on a surface side opposite to the pressure receiving surface of the diaphragm.
Description
- This application claims benefit of Japanese Application No. 2014-125089, filed on Jun. 18, 2014. The disclosure of the prior application is hereby incorporated by reference herein in its entirety.
- 1. Technical Field
- The present invention relates to a physical quantity sensor apparatus, an altimeter, an electronic apparatus, and a moving object.
- 2. Related Art
- For example, a pressure sensor module described in JP-A-2013-164332 (Patent Literature 1) includes a pressure sensor apparatus including a diaphragm section and configured to detect pressure on the basis of deflection of the diaphragm section and a temperature compensating apparatus including a temperature measuring section (a temperature sensor section). The pressure sensor section and the temperature measuring section are thermally connected via a heat transfer wire. Therefore, it is possible to perform temperature compensation for the detected pressure on the basis of the temperature of the pressure sensor section measured by the temperature measuring section.
- However, in the pressure sensor module having such a configuration, since the pressure sensor apparatus and the temperature compensating apparatus are disposed side by side, the clearance between the pressure sensor apparatus (in particular, the diaphragm section) and the temperature measuring section increases. Therefore, the temperature measuring section cannot accurately perform temperature measurement of the pressure sensor apparatus (in particular, the diaphragm section). Therefore, highly accurate temperature compensation cannot be performed.
- An advantage of some aspects of the invention is to provide a physical quantity sensor apparatus, an altimeter, an electronic apparatus, and a moving object that can perform excellent temperature compensation.
- The invention can be implemented as the following application examples.
- This application example is directed to a physical quantity sensor apparatus including: a physical quantity sensor including a flexurally deformable diaphragm including a pressure receiving surface; and a temperature sensor element disposed on the pressure receiving surface side of the diaphragm to be spaced apart from the diaphragm.
- With this configuration, it is possible to obtain the physical quantity sensor apparatus that can perform excellent temperature compensation.
- In the physical quantity sensor apparatus according to this application example, it is preferable that the temperature sensor element at least partially overlaps the diaphragm in plan view of the pressure receiving surface.
- With this configuration, it is possible to further reduce the distance between the diaphragm and the temperature sensor element. It is possible to more accurately detect the temperature of a pressure sensor (in particular, the temperature of the diaphragm) with a temperature sensor.
- In the physical quantity sensor apparatus according to this application example, it is preferable that the physical quantity sensor includes a pressure reference chamber on a surface side opposite to the pressure receiving surface of the diaphragm.
- With this configuration, it is possible to accurately detect a received physical quantity (in particular, pressure).
- In the physical quantity sensor apparatus according to this application example, it is preferable that the physical quantity sensor includes a signal output section configured to output a signal corresponding to deflection of the diaphragm.
- With this configuration, it is possible to extract a received physical quantity as a signal.
- In the physical quantity sensor apparatus according to this application example, it is preferable that the signal output section includes a piezo-resistance element disposed in the diaphragm.
- With this configuration, the configuration of the signal output section is simplified.
- In the physical quantity sensor apparatus according to this application example, it is preferable that the physical quantity sensor apparatus includes resin disposed between the diaphragm and the temperature sensor element.
- With this configuration, it is possible to protect the diaphragm.
- In the physical quantity sensor apparatus according to this application example, it is preferable that the resin is gel-like or liquid-like.
- With this configuration, it is possible to efficiently transmit a received physical quantity to the diaphragm.
- This application example is directed to an altimeter including the physical quantity sensor apparatus according to the application example described above.
- With this configuration, it is possible to obtain the altimeter having high reliability.
- This application example is directed to an electronic apparatus including the physical quantity sensor apparatus according to the application example described above.
- With this configuration, it is possible to obtain the electronic apparatus having high reliability.
- This application example is directed to a moving object including the physical quantity sensor apparatus according to the application example described above.
- With this configuration, it is possible to obtain the moving object having high reliability.
- The invention will be described with reference to the accompanying drawings, wherein like numbers reference like elements.
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FIG. 1 is a sectional view showing a physical quantity sensor apparatus according to a first embodiment of the invention. -
FIG. 2 is a plan view of the physical quantity sensor apparatus shown inFIG. 1 . -
FIG. 3 is a sectional view showing a physical quantity sensor included in the physical quantity sensor apparatus. -
FIG. 4 is a plan view showing a pressure sensor section included in the physical quantity sensor shown inFIG. 3 . -
FIG. 5 is a diagram showing a circuit including the pressure sensor section shown inFIG. 4 . -
FIG. 6 is a plan view showing a physical quantity sensor apparatus according to a second embodiment of the invention. -
FIG. 7 is a perspective view showing an example of an altimeter according to the invention. -
FIG. 8 is a front view showing an example of an electronic apparatus according to the invention. -
FIG. 9 is a perspective view showing an example of a moving object according to the invention. - Preferred embodiments of the invention are explained in detail below with reference to the drawings.
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FIG. 1 is a sectional view showing a physical quantity sensor apparatus according to a first embodiment of the invention.FIG. 2 is a plan view of the physical quantity sensor apparatus shown inFIG. 1 .FIG. 3 is a sectional view showing a physical quantity sensor included in the physical quantity sensor apparatus.FIG. 4 is a plan view showing a pressure sensor section included in the physical quantity sensor shown inFIG. 3 .FIG. 5 is a diagram showing a circuit including the pressure sensor section shown inFIG. 4 . Note that, in the following explanation, the upper side inFIGS. 1 and 3 is referred to as “upper” and the lower side inFIGS. 1 and 3 is referred to as “lower”. - A pressure sensor apparatus (a physical quantity sensor apparatus) 1 shown in
FIG. 1 includes a pressure sensor (a physical quantity sensor) 3, anIC chip 4 electrically connected to thepressure sensor 3 and including atemperature sensor 411, a package 2 that houses thepressure sensor 3 and theIC chip 4, and a fillingmaterial 11 that surrounds thepressure sensor 3 and theIC chip 4 in the package 2. These sections are explained in order below. - The package 2 has a function of housing the
pressure sensor 3 in aninternal space 28 formed on the inside of the package 2 and fixing thepressure sensor 3. - As shown in
FIG. 1 , the package 2 includes abase 21, ahousing 22, and aflexible wiring board 25. Thebase 21 and thehousing 22 are jointed to theflexible wiring board 25 to sandwich theflexible wiring board 25. The joining of thebase 21 and theflexible wiring board 25 and the joining of thehousing 22 and theflexible wiring board 25 are respectively performed viaadhesive layers 26 formed by adhesives. - The
base 21 configures the bottom surface of the package 2. In this embodiment, the entire shape of thebase 21 is a planar shape. The plan view shape of thebase 21 is a square shape. A material forming thebase 21 is not particularly limited. However, examples of the material include insulating materials such as various ceramics including ceramic oxides such as alumina, silica, titania, and zirconia and ceramic nitrides such as silicon nitride, aluminum nitride, and titanium nitride and various resin materials including polyethylene, polyamide, polyimide, polycarbonate, acrylic resin, ABS resin, and epoxy resin. Among these materials, one kind can be used or two or more kinds can be used in combination. Among these materials, the material is preferably the various ceramics. Consequently, it is possible to obtain the package 2 having excellent mechanical strength. Note that, besides, the plan view shape of the base 21 may be, for example, a circular shape or a polygonal shape such as a rectangular shape or a pentagonal shape. - The
housing 22 configures a lid section of the package 2. In this embodiment, the entire shape of thehousing 22 is a cylindrical shape. Thehousing 22 includes a first part where the outer diameter and the inner diameter of thehousing 22 gradually decrease from the lower end toward the upper end up to a halfway part in the package height and a second part where the outer diameter and the inner diameter are substantially fixed from the halfway part toward the upper end. As a material forming thehousing 22, materials same as the examples of the materials forming the base 21 can be used. Note that the shape of thehousing 22 is not particularly limited. - The
flexible wiring board 25 is located between the base 21 and thehousing 22 in the thickness direction of the package 2 and has a function of supporting thepressure sensor 3 and theIC chip 4 in the package 2 and extracting electric signals received from thepressure sensor 3 and theIC chip 4 to the outside of the package 2. Theflexible wiring board 25 is configured by asubstrate 23 having flexibility and awire 24 formed on the upper surface side of thesubstrate 23. - As shown in
FIG. 2 , thesubstrate 23 is configured by aframe section 231 formed in a substantially square frame shape and including anopening 233 in the center and abelt body 232 formed in a belt shape and integrally formed to project on one side of theframe section 231. A material forming thesubstrate 23 is not particularly limited as long as the material has flexibility. Examples of the material include polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyether sulfone (PES). Among these materials, one kind can be used or two or more kinds can be used in combination. - The
wire 24 has electric conductivity and is provided (drawn around) from theframe section 231 to thebelt body 232. Thewire 24 includes fourwiring sections 241 that support (suspend) thepressure sensor 3 and electrically connect thepressure sensor 3 and theIC chip 4 and fourwiring sections 245 that support theIC chip 4 and are electrically connected to theIC chip 4. - End portions on the
pressure sensor 3 side of the fourwiring sections 241 are respectively formed asterminals 241 a. End portions on theIC chip 4 side of the fourwiring sections 241 are respectively formed as flying leads 241 b. The fourterminals 241 a are disposed side by side along one side 231 a of theframe section 231. The four flying leads 241 b are disposed side by side along the same side 231 a. By disposing theterminals 241 a and the flying leads 241 b side by side along the same side 231 a in this way, it is possible to reduce the length of thewiring sections 241 and reduce occurrence of noise. - The four
terminals 241 a are electrically connected to thepressure sensor 3 respectively via bonding wires (metal wires) 15. Thepressure sensor 3 is separated from theframe section 231 and supported by thebonding wires 15. On the other hand, the four flying leads 241 b are respectively provided such that the distal end sides thereof project into theopening 233. At the distal end portions, the flying leads 241 b are electrically connected to theIC chip 4 via conductive fixingmembers 14. TheIC chip 4 is separated from theframe section 231 and supported by the flying leads 241 b. With the configuration explained above, thepressure sensor 3 and theIC chip 4 are electrically connected via the fourwiring sections 241. - On the other hand, the proximal end sides of the four
wiring sections 245 are provided in thebelt body 232 and the distal end sides of the fourwiring sections 245 are provided in theframe section 231. The distal end portions of the fourwiring sections 245 are disposed along aside 231 b opposed to the side 231 a and formed as flying leads 245 b. The four flying leads 245 b are respectively provided such that the distal end sides thereof project into theopening 233. At the distal end portions, the flying leads 245 b are electrically connected to theIC chip 4 via the fixingmembers 14. TheIC chip 4 is separated from theframe section 231 and supported by the flying leads 245 b. - With the package 2 having such a configuration, by electrically connecting, for example, a motherboard of an electronic apparatus or a moving object explained below to the end portions of the
wiring sections 245, it is possible to extract electric signals received from thepressure sensor 3 and theIC chip 4 to the outside of the package 2. - Note that the number of wiring sections included in the
wire 24 is not particularly limited and only has to be set as appropriate according to the number ofconnection terminals 743 provided in thepressure sensor 3 and the number ofconnection terminals 42 provided in theIC chip 4. A material forming thewire 24 is not particularly limited as long as the material has electric conductivity. Examples of the material include metal such as Ni, Pt, Li, Mg, Sr, Ag, Cu, Co, and Al, alloys such as MgAg, AlLi, and CuLi containing these kinds of metal, and oxides such as ITO and SnO2. Among these materials, one kind can be used or two or more kinds can be used in combination. - As shown in
FIG. 3 , thepressure sensor 3 includes a substrate 5, apressure sensor section 6, an elementperipheral structure 7, a hollow section 8, and a not-shown semiconductor circuit. These sections are explained in order below. - The substrate 5 is formed in a tabular shape and configured by stacking, on a
semiconductor substrate 51 configured by an SOI substrate (a substrate in which afirst Si layer 511, an SiO2 layer 512, and asecond Si layer 513 are stacked in this order), a first insulatingfilm 52 configured by a silicon oxide film (SiO2 film) and a second insulatingfilm 53 configured by a silicon nitride film (SiN film) in this order. However, thesemiconductor substrate 51 is not limited to the SOI substrate. For example, the silicon substrate can be used. - In the
semiconductor substrate 51, adiaphragm 54 thinner than a peripheral portion and flexurally deformed by received pressure is provided. Thediaphragm 54 is formed by providing a bottomed recess 55 on the lower surface of thesemiconductor substrate 51. The lower surface of the diaphragm 54 (the bottom surface of the recess 55) is formed as apressure receiving surface 541. - A not-shown semiconductor circuit (a circuit) is fabricated on the
semiconductor substrate 51 and above thesemiconductor substrate 51. The semiconductor circuit includes an active element such as a MOS transistor and circuit elements such as a capacitor, an inductor, a resistor, a diode, and a wire according to necessity. - The pressure sensor section (an output signal section) 6 includes, as shown in
FIG. 4 , four piezo-resistance elements diaphragm 54. The four piezo-resistance elements diaphragm 54 formed in a square shape in plan view. - The piezo-
resistance elements resistance sections diaphragm 54 andwires resistance sections resistance elements resistance sections diaphragm 54, connectingsections resistance sections wires resistance sections - The piezo-
resistance sections first Si layer 511 of thesemiconductor substrate 51. Thewires sections first Si layer 511 at concentration higher than concentration in the piezo-resistance sections - The piezo-
resistance elements resistance elements wires FIG. 5 and connected to the semiconductor circuit. A driving circuit (not shown in the figure) that supplies a driving voltage AVDC is connected to thebridge circuit 60. Thebridge circuit 60 outputs a signal (a voltage) corresponding to the resistance value of the piezo-resistance elements - The element
peripheral structure 7 is formed to define the hollow section 8. The elementperipheral structure 7 includes, as shown inFIG. 3 , an interlayer insulating film 71, awiring layer 72 formed on the interlayer insulating film 71, aninterlayer insulating film 73 formed on thewiring layer 72 and the interlayer insulating film 71, awiring layer 74 formed on theinterlayer insulating film 73, asurface protection film 75 formed on thewiring layer 74 and theinterlayer insulating film 73, and a sealing layer 76. Thewiring layer 74 includes acoating layer 741 including a plurality ofthin holes 742 that allow the inside and the outside of the hollow section 8 to communicate. The sealing layer 76 disposed on thecoating layer 741 seals thethin holes 742. Note that the wiring layers 72 and 74 include wiring layers formed to surround the hollow section 8 and wiring layers configuring wires of the semiconductor circuit. The semiconductor circuit is drawn out to the upper surface of thepressure sensor 3 by the wiring layers 72 and 74. A part of thewiring layer 74 is formed as theconnection terminals 743. Theconnection terminals 743 are electrically connected to theterminals 241 a via thebonding wires 15. - The
interlayer insulating films 71 and 73 are not particularly limited. However, an insulating film such as a silicon oxide film (SiO2 film) can be used. The wiring layers 72 and 74 are not particularly limited. However, a metal film such as an aluminum film can be used. The sealing layer 76 is not particularly limited. However, a metal film of Al, Cu, W, Ti, TiN, or the like can be used. Thesurface protection film 75 is not particularly limited. However, a film having resistance for protecting an element from moisture, dust, scratches, and the like such as a silicon oxide film, a silicon nitride film, a polyimide film, or an epoxy resin film can be used. - The hollow section 8 defined by the substrate 5 and the element
peripheral structure 7 is a closed space and functions as a pressure reference chamber having a reference value of pressure detected by thepressure sensor 3. The hollow section 8 is located on the opposite side of thepressure receiving surface 541 of thediaphragm 54 and is disposed to overlap thediaphragm 54. Thediaphragm 54 configures a part of a wall section that defines the hollow section 8. The hollow section 8 is in a vacuum state (e.g., 10 Pa or less). Consequently, thepressure sensor 3 can be used as a so-called “absolute pressure sensor element” that detects pressure with reference to the vacuum state. However, the hollow section 8 does not have to be in the vacuum state. For example, the hollow section 8 may be in an atmospheric pressure state, may be in a decompressed state in which air pressure is lower than the atmospheric pressure, or may be a pressurized state in which air pressure is higher than the atmospheric pressure. - As shown in
FIGS. 1 and 2 , asemiconductor circuit 41 is provided in theIC chip 4. Thesemiconductor circuit 41 includes, for example, thetemperature sensor 411 for detecting the temperature of the pressure sensor 3 (in particular, the piezo-resistance elements 61 to 64 on the diaphragm 54). Besides, thesemiconductor circuit 41 includes an active element such as a MOS transistor and circuit elements such as a capacitor, an inductor, a resistor, a diode, and a wire according to necessity. Thesemiconductor circuit 41 is electrically connected to the flying leads 241 b and 245 b via theconnection terminals 42 disposed on the upper surface (the surface on thepressure sensor 3 side) of thesemiconductor circuit 41. - The
semiconductor circuit 41 in theIC chip 4 and the semiconductor circuit in thepressure sensor 3 include, for example, a driving circuit for supplying a voltage to thebridge circuit 60, a temperature compensation circuit for performing temperature compensation of an output from thebridge circuit 60 on the basis of temperature detected by thetemperature sensor 411, and an output circuit that converts an output from the temperature compensation circuit into a predetermined output form (CMOS, LV-PECL, LVDS, or the like) and outputs the output. Note that the disposition of the driving circuit, the temperature compensation circuit, the output circuit, and the like is not particularly limited. For example, the driving circuit maybe formed in the semiconductor circuit in thepressure sensor 3 and the temperature compensation circuit and the output circuit may be formed in thesemiconductor circuit 41 in theIC chip 4. - The
temperature sensor 411 includes piezo-resistance elements (temperature sensor elements) 411 a. The piezo-resistance elements 411 a have a characteristic that a resistance value changes according to temperature. Therefore, thetemperature sensor 411 can detect an ambient temperature (i.e., the temperature of the piezo-resistance elements 61 to 64 on the diaphragm 54) on the basis of a change in a resistance value of the piezo-resistance elements 411 a. - The disposition of the piezo-
resistance elements 411 a is not particularly limited. However, as shown inFIG. 1 , at least a part of the piezo-resistance elements 411 a are preferably disposed to overlap thediaphragm 54 in plan view. Consequently, it is possible to bring the piezo-resistance elements 411 a closer to thediaphragm 54 and more accurately perform the temperature detection of thepressure sensor 3 by thetemperature sensor 411. Note that the configuration of thetemperature sensor 411 is not limited to this embodiment as long as thetemperature sensor 411 can detect the temperature of thepressure sensor 3. - The
pressure sensor 3 and theIC chip 4 are explained above. Thepressure sensor 3 is joined to theterminals 241 a of thewiring sections 241 via thebonding wires 15. Consequently, thepressure sensor 3 is supported by theframe section 231 and theconnection terminals 743 are electrically connected to thewiring sections 241. Thepressure sensor 3 is disposed with thepressure receiving surface 541 of thediaphragm 54 directed to the lower side (the opposite side of the opening of the package 2). On the other hand, theIC chip 4 is joined to thewiring sections members 14 having electric conductivity. Consequently, theIC chip 4 is supported by theframe section 231 and theconnection terminals 42 are electrically connected to thewiring sections pressure sensor 3 and theIC chip 4 are electrically connected via thewiring sections 241. An electric signal can be output from theIC chip 4 to the outside by thewiring sections 245. The fixingmembers 14 are not particularly limited as long as the fixingmembers 14 have electric conductivity. For example, a metal brazing material such as solder, a metal bump such as a gold bump, and a conductive adhesive can be used. - As shown in
FIG. 1 , thepressure sensor 3 and theIC chip 4 fixed in this way are set in a lifted state (a state of noncontact with the inner wall) in theinternal space 28 of the package 2 by thebonding wires 15, the flying leads 241 b and 245 b, and the fillingmaterial 11. Consequently, vibration and the like are less easily transmitted to thepressure sensor 3 and theIC chip 4 via the package 2. Therefore, it is possible to suppress deterioration in pressure detection accuracy by thepressure sensor apparatus 1. In this embodiment, at least a part of theIC chip 4 is disposed to overlap (disposed to vertically overlap) thepressure sensor 3 in plan view. Therefore, lateral spread of thepressure sensor apparatus 1 is suppressed. It is possible to attain a reduction in the size of thepressure sensor apparatus 1. - As shown in
FIG. 1 , thepressure sensor 3 is disposed with thepressure receiving surface 541 of thediaphragm 54 directed to the lower side. TheIC chip 4 is disposed on the lower side of thepressure sensor 3, that is, thepressure receiving surface 541 side. By providing theIC chip 4 on thepressure receiving surface 541 side (to be opposed to the pressure receiving surface 541), it is possible to more accurately detect, with thetemperature sensor 411, the temperature of the piezo-resistance elements 61 to 64 on thediaphragm 54. Specifically, if theIC chip 4 is disposed on the opposite side of the side in this embodiment (i.e., the opposite side of the pressure receiving surface 541), the hollow section 8 is interposed between thetemperature sensor 411 and the piezo-resistance elements 61 to 64. Since the hollow section 8 is in the vacuum state as explained above, a heat transfer rate is extremely low. Therefore, the temperature of the piezo-resistance elements 61 to 64 is less easily transmitted to thetemperature sensor 411. The temperature of the piezo-resistance elements 61 to 64 cannot be accurately detected. On the other hand, in this embodiment, since the hollow section 8 is not interposed between the piezo-resistance elements 61 to 64 and the temperature sensor 411 (the piezo-resistance elements 411 a), the heat of the piezo-resistance elements 61 to 64 is efficiently transmitted to thetemperature sensor 411. Therefore, according to this embodiment, it is possible to more accurately detect the temperature of the piezo-resistance elements 61 to 64 with thetemperature sensor 411. - In particular, in this embodiment, as shown in
FIG. 1 , since at least a part of the piezo-resistance elements 411 a of thetemperature sensor 411 are disposed to overlap thediaphragm 54 in plan view, it is possible to further reduce the clearance between thetemperature sensor 411 and the piezo-resistance elements 61 to 64. Therefore, the effects explained above are further improved. - As shown in
FIG. 1 , the filling material (resin) 11 is filled in theinternal space 28 formed in the package 2 to thereby cover thepressure sensor 3 and theIC chip 4 housed in theinternal space 28. With the fillingmaterial 11, it is possible to protect thepressure sensor 3 and the IC chip 4 (dust proof and waterproof) and reduce external stress acting on thepressure sensor apparatus 1. Note that pressure applied to thepressure sensor apparatus 1 acts on thepressure receiving surface 541 of thepressure sensor 3 via the opening of thehousing 22 and the fillingmaterial 11. - The filling
material 11 only has to be a substance softer than thepressure sensor 3, theIC chip 4, and the package 2. The fillingmaterial 11 is, for example, liquid-like or gel-like. As a specific example, silicone oil, fluorine oil, silicone gel, and the like can be used. In other words, the fillingmaterial 11 can be a substance having a Young' s modulus smaller than the Young' s modulus of thepressure sensor 3 and theIC chip 4. The viscosity of the fillingmaterial 11 is not particularly limited. For example, the penetration of the fillingmaterial 11 is preferably in a range of 50 or more and 250 or less and more preferably in a range of 150 or more and 250 or less. Consequently, the fillingmaterial 11 can be formed sufficiently soft. The pressure applied to thepressure sensor apparatus 1 efficiently acts on thepressure receiving surface 541. - Note that, in order to more accurately perform the temperature detection by the
temperature sensor 411, a heat conductive filler may be dispersed in the filling material 11 (in particular, a portion located between thepressure sensor 3 and the IC chip 4). Consequently, it is possible to improve the thermal conductivity of the fillingmaterial 11 and more accurately perform the temperature detection by thetemperature sensor 411. As the heat conductive filler, for example, materials having electric conductivity such as metal powder, graphite, and carbon black and materials having insulation such as aluminum nitride, boron nitride, and alumina can be used. Note that, in order to secure the insulation of the fillingmaterial 11, as the heat conductive filler, it is preferable to use a material having insulation. - The configuration of the
pressure sensor apparatus 1 is explained above. - In the
pressure sensor apparatus 1, thediaphragm 54 is flexurally deformed according to pressure received by thepressure receiving surface 541 of thediaphragm 54. Consequently, the piezo-resistance elements resistance elements bridge circuit 60 changes. The piezo-resistance elements bridge circuit 60 is caused by the deflection of the piezo-resistance elements resistance elements semiconductor circuit 41 corrects, on the basis of the temperature of the piezo-resistance elements temperature sensor 411, a signal obtained from thebridge circuit 60 and calculates, on the basis of the signal after the correction, the magnitude of the pressure received on thepressure receiving surface 541 and outputs information concerning the magnitude of the pressure. -
FIG. 6 is a plan view showing a physical quantity sensor apparatus according to a second embodiment of the invention. - The physical quantity sensor apparatus according to the second embodiment is explained below. Differences from the first embodiment are mainly explained. Explanation of similarities is omitted.
- The second embodiment is the same as the first embodiment except that the disposition and a connection method of a pressure sensor and an IC chip are different.
- As shown in
FIG. 6 , in thepressure sensor apparatus 1 in this embodiment, both the ends of thewiring sections 241 are located on theframe section 231. That is, unlike the first embodiment, one ends of thewiring sections 241 are not formed as flying leads. Theentire pressure sensor 3 is disposed to overlap theIC chip 4 in plan view. In other words, theentire pressure sensor 3 is included in theIC chip 4 in plan view. TheIC chip 4 is connected to thewiring sections entire pressure sensor 3 overlaps theIC chip 4, compared with the first embodiment, thepressure sensor apparatus 1 having such a configuration can be reduced in size. - According to the second embodiment, it is possible to exhibit effects same as the effects in the first embodiment.
- An example of an altimeter including a physical quantity sensor according to the invention is explained.
-
FIG. 7 is a perspective view showing an example of the altimeter according to the invention. - As shown in
FIG. 7 , analtimeter 200 can be worn on a wrist like a wristwatch. Thepressure sensor apparatus 1 is mounted on the inside of thealtimeter 200. The altitude above the sea level of the present location, the atmospheric pressure of the present location, and the like can be displayed on adisplay section 201. - Note that various kinds of information such as the present time, the heart rate of a user, and weather can be displayed on the
display section 201. - A navigation system to which an electronic apparatus including the physical quantity sensor according to the invention is applied is explained.
-
FIG. 8 is a front view showing an example of the electronic apparatus according to the invention. - As shown in
FIG. 8 , anavigation system 300 includes not-shown map information, position information acquiring means from a GPS (Global Positioning System), self-contained navigation means by a gyro sensor, an acceleration sensor, and vehicle speed data, thepressure sensor apparatus 1, and adisplay section 301 that displays predetermined position information or course information. - With the
navigation system 300, it is possible to acquire altitude information in addition to acquired position information. For example, in traveling on an elevated road indicating substantially the same position as a general road on the position information, if the altitude information is not acquired, the navigation system cannot determine whether a vehicle is traveling on the general road or the elevated road. The navigation system provides a user with information concerning the general road as preferential information. Therefore, thenavigation system 300 can acquire the altitude information with thepressure sensor apparatus 1, detect an altitude change due to entrance into the elevated road from the general road, and provide the user with navigation information in a traveling state on the elevated road. - Note that the
display section 301 is a section that can be reduced in size and thickness such as a liquid crystal display panel or an organic electro-luminescence display. - Note that the electronic apparatus including the physical quantity sensor apparatus according to the invention is not limited to the electronic apparatuses explained above. The electronic apparatus can be applied to, for example, a personal computer, a cellular phone, medical apparatuses (e.g., an electronic thermometer, a sphygmomanometer, a blood sugar level meter, an electrocardiographic apparatus, an ultrasonic diagnostic apparatus, and an electronic endoscope), various measurement apparatuses, meters (e.g., meters of a vehicle, an airplane, and a ship), and a flight simulator.
- A moving object including the physical quantity sensor apparatus according to the invention is explained.
-
FIG. 9 is a perspective view showing an example of the moving object according to the invention. - As shown in
FIG. 9 , a movingobject 400 includes avehicle body 401 and fourwheels 402 and is configured to rotate thewheels 402 with a not-shown power source (engine) provided in thevehicle body 401. The navigation system 300 (the pressure sensor apparatus 1) is incorporated in the movingobject 400. - The physical quantity sensor apparatus, the altimeter, the electronic apparatus, and the moving object according to the invention are explained above with reference to the embodiments shown in the figures. However, the invention is not limited to these apparatuses. The components of the sections can be replaced with any components having similar functions. Any other components and processes may be added. The embodiments may be combined as appropriate.
- In the embodiments, the pressure sensor section including the piezo-resistance element is explained as the pressure sensor section included in the pressure sensor. However, the pressure sensor section is not limited to this pressure sensor section. For example, a pressure sensor section including a flat-type oscillator, other MEMS oscillators such as a comb-teeth electrode, and a vibrating element such as a quartz oscillator can also be used.
Claims (10)
1. A physical quantity sensor apparatus comprising:
a physical quantity sensor including a flexurally deformable diaphragm including a pressure receiving surface; and
a temperature sensor element disposed on the pressure receiving surface side of the diaphragm to be spaced apart from the diaphragm.
2. The physical quantity sensor apparatus according to claim 1 , wherein the temperature sensor element at least partially overlaps the diaphragm in plan view of the pressure receiving surface.
3. The physical quantity sensor apparatus according to claim 1 , wherein the physical quantity sensor includes a pressure reference chamber on a surface side opposite to the pressure receiving surface of the diaphragm.
4. The physical quantity sensor apparatus according to claim 1 , wherein the physical quantity sensor includes a signal output section configured to output a signal corresponding to deflection of the diaphragm.
5. The physical quantity sensor apparatus according to claim 4 , wherein the signal output section includes a piezo-resistance element disposed in the diaphragm.
6. The physical quantity sensor apparatus according to claim 1 , wherein the physical quantity sensor apparatus includes resin disposed between the diaphragm and the temperature sensor element.
7. The physical quantity sensor apparatus according to claim 6 , wherein the resin is gel-like or liquid-like.
8. An altimeter comprising the physical quantity sensor apparatus according to claim 1 .
9. An electronic apparatus comprising the physical quantity sensor apparatus according to claim 1 .
10. A moving object comprising the physical quantity sensor apparatus according to claim 1 .
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2014-125089 | 2014-06-18 | ||
JP2014125089A JP2016003977A (en) | 2014-06-18 | 2014-06-18 | Physical quantity sensor device, altimeter, electronic apparatus, and mobile body |
Publications (1)
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US20150369682A1 true US20150369682A1 (en) | 2015-12-24 |
Family
ID=54869370
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US14/734,728 Abandoned US20150369682A1 (en) | 2014-06-18 | 2015-06-09 | Physical Quantity Sensor Apparatus, Altimeter, Electronic Apparatus, And Moving Object |
Country Status (3)
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US (1) | US20150369682A1 (en) |
JP (1) | JP2016003977A (en) |
CN (1) | CN105300411A (en) |
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US20160187218A1 (en) * | 2014-12-24 | 2016-06-30 | Nagano Keiki Co., Ltd. | Physical quantity measuring device |
US9761543B1 (en) * | 2016-12-20 | 2017-09-12 | Texas Instruments Incorporated | Integrated circuits with thermal isolation and temperature regulation |
US20170276564A1 (en) * | 2016-03-22 | 2017-09-28 | Seiko Epson Corporation | Pressure sensor-provided device |
US9865537B1 (en) | 2016-12-30 | 2018-01-09 | Texas Instruments Incorporated | Methods and apparatus for integrated circuit failsafe fuse package with arc arrest |
US20180024020A1 (en) * | 2016-07-19 | 2018-01-25 | Kulite Semiconductor Products, Inc. | Low-stress floating-chip pressure sensors |
US9929110B1 (en) | 2016-12-30 | 2018-03-27 | Texas Instruments Incorporated | Integrated circuit wave device and method |
US10074639B2 (en) | 2016-12-30 | 2018-09-11 | Texas Instruments Incorporated | Isolator integrated circuits with package structure cavity and fabrication methods |
US10121847B2 (en) | 2017-03-17 | 2018-11-06 | Texas Instruments Incorporated | Galvanic isolation device |
US10179730B2 (en) | 2016-12-08 | 2019-01-15 | Texas Instruments Incorporated | Electronic sensors with sensor die in package structure cavity |
US10411150B2 (en) | 2016-12-30 | 2019-09-10 | Texas Instruments Incorporated | Optical isolation systems and circuits and photon detectors with extended lateral P-N junctions |
US10861796B2 (en) | 2016-05-10 | 2020-12-08 | Texas Instruments Incorporated | Floating die package |
US11054329B2 (en) * | 2017-09-18 | 2021-07-06 | Apple Inc. | Electronic devices having pressure sensors with heaters |
US11067466B2 (en) * | 2017-10-17 | 2021-07-20 | Infineon Technologies Ag | Pressure sensor devices and methods for manufacturing pressure sensor devices |
US11211305B2 (en) | 2016-04-01 | 2021-12-28 | Texas Instruments Incorporated | Apparatus and method to support thermal management of semiconductor-based components |
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KR101518892B1 (en) * | 2013-04-08 | 2015-05-11 | 현대자동차 주식회사 | Torque converter for vehicles |
JP2021092489A (en) * | 2019-12-12 | 2021-06-17 | アズビル株式会社 | Differential pressure measuring device |
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US11947734B2 (en) * | 2020-11-19 | 2024-04-02 | Goertek Inc. | Apparatus and method for force sensing, and electronic device |
Also Published As
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JP2016003977A (en) | 2016-01-12 |
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