US20150104649A1 - Laminated Sheet and Method of Manufacturing Semiconductor Device Using the Laminated Sheet - Google Patents
Laminated Sheet and Method of Manufacturing Semiconductor Device Using the Laminated Sheet Download PDFInfo
- Publication number
- US20150104649A1 US20150104649A1 US14/580,054 US201414580054A US2015104649A1 US 20150104649 A1 US20150104649 A1 US 20150104649A1 US 201414580054 A US201414580054 A US 201414580054A US 2015104649 A1 US2015104649 A1 US 2015104649A1
- Authority
- US
- United States
- Prior art keywords
- pressure
- sensitive adhesive
- laminated sheet
- resin composition
- tape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 288
- 238000004519 manufacturing process Methods 0.000 title description 75
- 239000010410 layer Substances 0.000 claims abstract description 385
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract description 311
- 239000011342 resin composition Substances 0.000 claims abstract description 220
- 238000000227 grinding Methods 0.000 claims abstract description 185
- 229920005989 resin Polymers 0.000 claims description 51
- 239000011347 resin Substances 0.000 claims description 51
- 229920001187 thermosetting polymer Polymers 0.000 claims description 31
- 239000003822 epoxy resin Substances 0.000 claims description 25
- 229920000647 polyepoxide Polymers 0.000 claims description 25
- 230000007423 decrease Effects 0.000 abstract description 18
- 230000006866 deterioration Effects 0.000 abstract description 14
- 238000000034 method Methods 0.000 description 75
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 56
- 230000005855 radiation Effects 0.000 description 53
- 229920000058 polyacrylate Polymers 0.000 description 46
- 239000000178 monomer Substances 0.000 description 44
- 238000003847 radiation curing Methods 0.000 description 42
- 230000001070 adhesive effect Effects 0.000 description 36
- 239000000853 adhesive Substances 0.000 description 35
- -1 polyethylene Polymers 0.000 description 34
- 239000000758 substrate Substances 0.000 description 31
- 239000000203 mixture Substances 0.000 description 30
- 230000001678 irradiating effect Effects 0.000 description 22
- 239000003431 cross linking reagent Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 18
- 238000010030 laminating Methods 0.000 description 18
- 229920005601 base polymer Polymers 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- 238000000576 coating method Methods 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 13
- 229920001971 elastomer Polymers 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 239000005060 rubber Substances 0.000 description 13
- 238000001723 curing Methods 0.000 description 12
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229920002799 BoPET Polymers 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- 238000001035 drying Methods 0.000 description 10
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 239000003566 sealing material Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 9
- 238000004132 cross linking Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 125000003700 epoxy group Chemical group 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
- 229920000178 Acrylic resin Polymers 0.000 description 7
- 239000004925 Acrylic resin Substances 0.000 description 7
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 7
- 125000000524 functional group Chemical group 0.000 description 7
- 229940059574 pentaerithrityl Drugs 0.000 description 7
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 7
- 229920001228 polyisocyanate Polymers 0.000 description 7
- 239000005056 polyisocyanate Substances 0.000 description 7
- 238000003825 pressing Methods 0.000 description 7
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 239000003999 initiator Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 239000004814 polyurethane Substances 0.000 description 6
- 229920002635 polyurethane Polymers 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229940095095 2-hydroxyethyl acrylate Drugs 0.000 description 5
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 5
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 5
- 239000005011 phenolic resin Substances 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 4
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 4
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 4
- 241001050985 Disco Species 0.000 description 4
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 125000005907 alkyl ester group Chemical group 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 4
- 239000002985 plastic film Substances 0.000 description 4
- 229920006255 plastic film Polymers 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229920003002 synthetic resin Polymers 0.000 description 4
- 239000000057 synthetic resin Substances 0.000 description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 3
- 229920000877 Melamine resin Polymers 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 3
- 229920001807 Urea-formaldehyde Polymers 0.000 description 3
- 238000012644 addition polymerization Methods 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 2
- NPSJHQMIVNJLNN-UHFFFAOYSA-N 2-ethylhexyl 4-nitrobenzoate Chemical compound CCCCC(CC)COC(=O)C1=CC=C([N+]([O-])=O)C=C1 NPSJHQMIVNJLNN-UHFFFAOYSA-N 0.000 description 2
- 239000004808 2-ethylhexylester Substances 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- AUZRCMMVHXRSGT-UHFFFAOYSA-N 2-methylpropane-1-sulfonic acid;prop-2-enamide Chemical compound NC(=O)C=C.CC(C)CS(O)(=O)=O AUZRCMMVHXRSGT-UHFFFAOYSA-N 0.000 description 2
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 2
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 2
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- NYXVMNRGBMOSIY-UHFFFAOYSA-N OCCC=CC(=O)OP(O)(O)=O Chemical compound OCCC=CC(=O)OP(O)(O)=O NYXVMNRGBMOSIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 2
- JVCDUTIVKYCTFB-UHFFFAOYSA-N [Bi].[Zn].[Sn] Chemical compound [Bi].[Zn].[Sn] JVCDUTIVKYCTFB-UHFFFAOYSA-N 0.000 description 2
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 125000005250 alkyl acrylate group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 2
- 238000012662 bulk polymerization Methods 0.000 description 2
- 125000002843 carboxylic acid group Chemical group 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 2
- GCFAUZGWPDYAJN-UHFFFAOYSA-N cyclohexyl 3-phenylprop-2-enoate Chemical compound C=1C=CC=CC=1C=CC(=O)OC1CCCCC1 GCFAUZGWPDYAJN-UHFFFAOYSA-N 0.000 description 2
- 238000007720 emulsion polymerization reaction Methods 0.000 description 2
- 125000004494 ethyl ester group Chemical group 0.000 description 2
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 2
- 239000001530 fumaric acid Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 150000004702 methyl esters Chemical class 0.000 description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 125000000542 sulfonic acid group Chemical group 0.000 description 2
- 238000010557 suspension polymerization reaction Methods 0.000 description 2
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 2
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 2
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229920003067 (meth)acrylic acid ester copolymer Polymers 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- VNQXSTWCDUXYEZ-UHFFFAOYSA-N 1,7,7-trimethylbicyclo[2.2.1]heptane-2,3-dione Chemical compound C1CC2(C)C(=O)C(=O)C1C2(C)C VNQXSTWCDUXYEZ-UHFFFAOYSA-N 0.000 description 1
- ZVEMLYIXBCTVOF-UHFFFAOYSA-N 1-(2-isocyanatopropan-2-yl)-3-prop-1-en-2-ylbenzene Chemical compound CC(=C)C1=CC=CC(C(C)(C)N=C=O)=C1 ZVEMLYIXBCTVOF-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
- UXCIJKOCUAQMKD-UHFFFAOYSA-N 2,4-dichlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC(Cl)=C3SC2=C1 UXCIJKOCUAQMKD-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LZHUBCULTHIFNO-UHFFFAOYSA-N 2,4-dihydroxy-1,5-bis[4-(2-hydroxyethoxy)phenyl]-2,4-dimethylpentan-3-one Chemical compound C=1C=C(OCCO)C=CC=1CC(C)(O)C(=O)C(O)(C)CC1=CC=C(OCCO)C=C1 LZHUBCULTHIFNO-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- WULAHPYSGCVQHM-UHFFFAOYSA-N 2-(2-ethenoxyethoxy)ethanol Chemical compound OCCOCCOC=C WULAHPYSGCVQHM-UHFFFAOYSA-N 0.000 description 1
- FGTYTUFKXYPTML-UHFFFAOYSA-N 2-benzoylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 FGTYTUFKXYPTML-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- LRRQSCPPOIUNGX-UHFFFAOYSA-N 2-hydroxy-1,2-bis(4-methoxyphenyl)ethanone Chemical compound C1=CC(OC)=CC=C1C(O)C(=O)C1=CC=C(OC)C=C1 LRRQSCPPOIUNGX-UHFFFAOYSA-N 0.000 description 1
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical class OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- YRNDGUSDBCARGC-UHFFFAOYSA-N 2-methoxyacetophenone Chemical compound COCC(=O)C1=CC=CC=C1 YRNDGUSDBCARGC-UHFFFAOYSA-N 0.000 description 1
- JEHFRMABGJJCPF-UHFFFAOYSA-N 2-methylprop-2-enoyl isocyanate Chemical compound CC(=C)C(=O)N=C=O JEHFRMABGJJCPF-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- HMBNQNDUEFFFNZ-UHFFFAOYSA-N 4-ethenoxybutan-1-ol Chemical compound OCCCCOC=C HMBNQNDUEFFFNZ-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- BWPYBAJTDILQPY-UHFFFAOYSA-N Methoxyphenone Chemical compound C1=C(C)C(OC)=CC=C1C(=O)C1=CC=CC(C)=C1 BWPYBAJTDILQPY-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229920011250 Polypropylene Block Copolymer Polymers 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 239000004708 Very-low-density polyethylene Substances 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000004069 aziridinyl group Chemical group 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 229930006711 bornane-2,3-dione Natural products 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- OPECTNGATDYLSS-UHFFFAOYSA-N naphthalene-2-sulfonyl chloride Chemical compound C1=CC=CC2=CC(S(=O)(=O)Cl)=CC=C21 OPECTNGATDYLSS-UHFFFAOYSA-N 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005629 polypropylene homopolymer Polymers 0.000 description 1
- 229920005630 polypropylene random copolymer Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920001866 very low density polyethylene Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C09J7/0207—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B3/00—General-purpose turning-machines or devices, e.g. centre lathes with feed rod and lead screw; Sets of turning-machines
- B23B3/30—Turning-machines with two or more working-spindles, e.g. in fixed arrangement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- C09J2201/606—
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2463/00—Presence of epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
- H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/2902—Disposition
- H01L2224/29023—Disposition the whole layer connector protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9211—Parallel connecting processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
Definitions
- the present invention relates to a laminated sheet and a method of manufacturing a semiconductor device using the laminated sheet.
- a flip-chip semiconductor device in which a semiconductor element such as a semiconductor chip is mounted on a substrate by flip-chip bonding, has been widely used for semiconductor devices and their packaging.
- flip-chip bonding a circuit surface of a semiconductor chip is fixed to an electrode forming surface of the substrate in such a way that the circuit surface is facing the electrode forming surface.
- a method is disclosed in, for example, JP-A-9-213741, JP-A-10-242208, and JP-A-10-270497 of using an adhesive film as a sealing material and adhering a semiconductor element and a substrate via the adhesive film therebetween to seal the space between the semiconductor element and the substrate conveniently and securely.
- JP-A-2002-118147 and JP-A-2008-130588 A method of manufacturing a semiconductor device is disclosed in JP-A-2002-118147 and JP-A-2008-130588, including the steps of grinding a semiconductor element thin and sealing a space between the semiconductor element and the substrate using an adhesive film.
- a method of mounting a semiconductor chip to a printed circuit board is disclosed in JP-A-2002-118147, including the following steps [a] to [g]: [a] manufacturing a sheet for mounting a semiconductor chip in which a thermosetting resin layer is provided on one surface of a synthetic resin film, [b] press bonding the thermosetting resin layer of the sheet for mounting a semiconductor chip onto a surface where bump electrodes of a semiconductor wafer are provided, [c] grinding the backside of the semiconductor wafer on which the sheet for mounting a semiconductor chip is press bonded to obtain the desired thickness of the semiconductor wafer, [d] dicing into individual pieces the semiconductor wafer of which the backside is ground with the sheet for mounting a semiconductor chip being press bonded, [e] peeling the synthetic resin film of the sheet for mounting a semiconductor chip that is press bonded onto the bump electrode surface of the semiconductor chip that is obtained by dicing, [f] determining the position of the bump electrodes of the semiconductor chip so that they are correctly facing and contacting the corresponding terminals on the printed circuit
- JP-A-2002-118147 the semiconductor wafer is diced into individual pieces with the sheet for mounting a semiconductor chip being press bonded ([d]), and then the synthetic resin film is peeled off the sheet for mounting a semiconductor chip that is press bonded onto the bump electrode surface of the semiconductor chip that is obtained by dicing.
- greater man-hours are required because the synthetic resin film that is also diced into individual pieces cannot be peeled from a plurality of the semiconductor chips collectively and has to be peeled individually.
- a method of manufacturing an electronic device system is disclosed in JP-A-2008-130588, using an electronic device substrate having a plurality of electronic elements that are not electrically connected to each other, electrodes, and an adhesive composition for a semiconductor that is formed on the surface where the electrodes are formed, and having a plastic film that is laminated onto the adhesive composition for a semiconductor.
- a pressure-sensitive adhesive layer is formed on the adhesive composition for a semiconductor of the electronic device substrate, the surface of the electronic device wafer where electronic elements are not formed is polished, the plastic film is peeled, then the wafer is diced into individual pieces, an individualized electronic element with the adhesive composition for a semiconductor is mounted on a circuit board, and the electrodes formed on the electronic element and the electrodes on the circuit board are directly contacted to each other to be electrically connected.
- the plastic film is peeled, and then dicing is performed in JP-A-2008-130588. That is, dicing is performed while the adhesive composition for a semiconductor is exposed. Because of that, water is absorbed by the adhesive composition for a semiconductor during dicing, and it causes a generation of space and voids in a layer of the adhesive composition for a semiconductor during flip-chip mounting. In addition, cut scraps may be attached. Because of these, a decrease in adhering strength and a deterioration in electrical reliability may occur.
- the present invention has been made in view of the above-described problems, and an object thereof is to provide a laminated sheet that can prevent the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability, and in which a back grinding tape can be peeled from a plurality of semiconductor elements collectively after dicing, and a method of manufacturing a semiconductor device using the laminated sheet.
- a laminated sheet which has a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, wherein the tensile modulus of the pressure-sensitive adhesive layer is in a specific range and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is in a specific range, to thereby make it possible to prevent a decrease in adhering strength and a deterioration in electrical reliability and to peel the back grinding tape from a plurality of semiconductor elements collectively after dicing.
- a laminated sheet according to a first aspect of the present invention has a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, wherein the tensile modulus of the pressure-sensitive adhesive layer at 23° C. is 0.1 to 5.0 MPa, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 to 5 N/20 mm at 23° C. and 300 mm/min.
- the laminated sheet is used in a method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- the laminated sheet because dicing is performed while the back grinding tape is pasted onto the resin composition layer as described above, the absorption of water by the resin composition layer during dicing and the attachment of cut scraps to the resin composition layer can be suppressed. As a result, the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented. Because the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed. Because the T-peeling strength is 5 N/20 mm or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- the tensile modulus of the pressure-sensitive adhesive layer at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer is 5.0 MPa or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- the resin composition layer preferably contains a thermosetting resin.
- the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- thermosetting resin is preferably an epoxy resin.
- a method of manufacturing a semiconductor device uses a laminated sheet having a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, in which the tensile modulus of the pressure-sensitive adhesive layer at 23° C. is 0.1 to 5.0 MPa, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 to 5 N/20 mm at 23° C.
- the method including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- the absorption of water by the resin composition layer during dicing and the attachment of the cut scraps to the resin composition layer can be suppressed.
- the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented.
- the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed.
- the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer is 5.0 MPa or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- the resin composition layer preferably contains a thermosetting resin.
- the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- thermosetting resin is preferably an epoxy resin.
- a laminated sheet according to a second aspect of the present invention has a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, wherein the pressure-sensitive adhesive layer is a radiation curable-type pressure-sensitive adhesive layer, the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 to 5.0 MPa, the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 to 20 N/20 mm at 23° C. and 300 mm/min, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer after radiation curing is 0.01 to 5 N/20 mm at 23° C. and 300 mm/min.
- the laminated sheet is used in any of the following methods (1) to (4) of manufacturing a semiconductor device.
- a method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- a method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, irradiating the laminated sheet side with radiation after dicing, pasting a pressure-sensitive adhesive tape to the laminated sheet after irradiating with radiation, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- a method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, irradiating the laminated sheet side with radiation after pasting of the pressure-sensitive adhesive tape, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- a method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, irradiating the laminated sheet side with radiation after dicing, pasting a pressure-sensitive adhesive tape to the laminated sheet after irradiating with radiation, irradiating the laminated sheet side with radiation after pasting of the pressure-sensitive adhesive tape, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- the laminated sheet because dicing is performed while the back grinding tape is pasted onto the resin composition layer as described above, the absorption of water by the resin composition layer during dicing and the attachment of the cut scraps to the resin composition layer can be suppressed. As a result, the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented. Because the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed.
- the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer after radiation curing at 23° C. is 0.1 MPa or more and 5.0 MPa or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- the resin composition layer preferably contains a thermosetting resin.
- the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- thermosetting resin is preferably an epoxy resin.
- a method of manufacturing a semiconductor device uses a laminated sheet having a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, in which the pressure-sensitive adhesive layer is a radiation-curable type pressure-sensitive adhesive layer, the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 to 5.0 MPa, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 to 5 N/20 mm at 23° C.
- the method including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- the absorption of water by the resin composition layer during dicing and the attachment of the cut scraps to the resin composition layer can be suppressed.
- the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented.
- the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed.
- the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing is 5.0 MPa or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- the resin composition layer preferably contains a thermosetting resin.
- the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- thermosetting resin is preferably an epoxy resin.
- the method of manufacturing a semiconductor device uses a laminated sheet having a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, in which the pressure-sensitive adhesive layer is a radiation-curable type pressure-sensitive adhesive layer, the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 to 5.0 MPa, the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 to 20 N/20 mm at 23° C.
- the method including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, irradiating the laminated sheet side with radiation after dicing, pasting a pressure-sensitive adhesive tape to the laminated sheet after irradiating with radiation, and peeling the pressure-sensitive
- the absorption of water by the resin composition layer during dicing and the attachment of the cut scraps to the resin composition layer can be suppressed.
- the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented.
- the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed.
- the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 5.0 MPa or less, the irradiating amount is controlled to make the tensile modulus after radiation curing at 23° C. be 0.1 MPa or more and 5.0 MPa or less. As a result, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- the resin composition layer preferably contains a thermosetting resin.
- the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- thermosetting resin is preferably an epoxy resin.
- the method of manufacturing a semiconductor device uses a laminated sheet having aback grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, in which the pressure-sensitive adhesive layer is a radiation-curable type pressure-sensitive adhesive layer, the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 to 5.0 MPa, the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 to 20 N/20 mm at 23° C.
- the method including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, irradiating the laminated sheet side with radiation after pasting of the pressure-sensitive adhesive tape, and peeling the pressure
- the absorption of water by the resin composition layer during dicing and the attachment of the cut scraps to the resin composition layer can be suppressed.
- the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented.
- the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed.
- the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 5.0 MPa or less, the irradiating amount is controlled to make the tensile modulus after radiation curing at 23° C. be 0.1 MPa or more and 5.0 MPa or less. As a result, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- the resin composition layer preferably contains a thermosetting resin.
- the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- thermosetting resin is preferably an epoxy resin.
- the method of manufacturing a semiconductor device uses a laminated sheet having a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, in which the pressure-sensitive adhesive layer is a radiation-curable type pressure-sensitive adhesive layer, the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 to 5.0 MPa, the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 to 20 N/20 mm at 23° C.
- the method including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, irradiating the laminated sheet side with radiation after dicing, pasting a pressure-sensitive adhesive tape to the laminated sheet after irradiating with radiation, irradiating the laminate
- the absorption of water by the resin composition layer during dicing and the attachment of the cut scraps to the resin composition layer can be suppressed.
- the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented.
- the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed.
- the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 5.0 MPa or less, the irradiating amount is controlled to make the tensile modulus after radiation curing at 23° C. be 0.1 MPa or more and 5.0 MPa or less. As a result, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- the resin composition layer preferably contains a thermosetting resin.
- the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- thermosetting resin is preferably an epoxy resin.
- a laminated sheet can be provided that can prevent the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability and in which a back grinding tape can be peeled from a plurality of semiconductor elements collectively after dicing, and a method of manufacturing a semiconductor device using the laminated sheet can be provided.
- FIG. 1 is a schematic sectional view showing a laminated sheet according to one embodiment of a first aspect
- FIG. 2 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 1 ;
- FIG. 3 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 1 ;
- FIG. 4 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 1 ;
- FIG. 5 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 1 ;
- FIG. 6 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 1 ;
- FIG. 7 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 1 ;
- FIG. 8 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 1 ;
- FIG. 9 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 1 ;
- FIG. 10 is a schematic sectional view showing a laminated sheet according to one embodiment of a second aspect
- FIG. 11 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 10 ;
- FIG. 12 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 10 ;
- FIG. 13 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 10 ;
- FIG. 14 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 10 ;
- FIG. 15 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 10 ;
- FIG. 16 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 10 ;
- FIG. 17 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 10 ;
- FIG. 18 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 10 ;
- FIG. 19 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 10 ;
- FIG. 20 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown in FIG. 10 .
- FIG. 1 is a schematic sectional view showing a laminated sheet according to one embodiment of the first aspect.
- the parts are omitted that are unnecessary for the description, and some parts are enlarged, shrunken, and the like in order to aid in the description.
- a laminated sheet 10 has a back grinding tape 11 in which a pressure-sensitive adhesive layer 14 is formed on a base 12 , and a resin composition layer 16 is provided on the pressure-sensitive adhesive layer 14 of the back grinding tape 11 .
- the laminated sheet 10 in which the pressure-sensitive adhesive layer 14 is formed with a general pressure-sensitive adhesive, is used in a method of manufacturing a semiconductor device including the following steps.
- the method of manufacturing a semiconductor device includes the steps of pasting the resin composition layer 16 surface of the laminated sheet 10 to the circuit surface of a semiconductor wafer 40 to obtain the semiconductor wafer 40 with the laminated sheet 10 (refer to FIG. 2 ), grinding the surface, where the laminated sheet 10 of the semiconductor wafer 40 with the laminated sheet 10 is not pasted, to make the semiconductor wafer 40 with the laminated sheet 10 thin (refer to FIG. 3 ), pasting a dicing tape 20 onto the ground surface of the thin semiconductor wafer 40 with the laminated sheet 10 to obtain the semiconductor wafer 40 in which the dicing tape 20 and the laminated sheet 10 are pasted together (refer to FIG.
- (Meth)acrylic acid refers to an acrylic acid and/or a methacrylic acid, and hereinafter, every occurrence of (meth) in the present application has the same meaning.
- a base 12 serves as a strength base of the laminated sheet 10 .
- examples thereof include polyolefin such as low-density polyethylene, straight chain polyethylene, intermediate-density polyethylene, high-density polyethylene, very low-density polyethylene, polypropylene random copolymer, polypropylene block copolymer, homopolypropylene, polybutene, and polymethylpentene; ethylene-vinylacetate copolymer; ionomer resin; ethylene(meth)acrylic acid copolymer; ethylene(meth)acrylic acid ester copolymer; ethylene-butene copolymer; ethylene-hexene copolymer; polyurethane; polyester such as polyethyleneterephthalate and polyethylenenaphthalate; polycarbonate; polyether
- the material of the base 12 includes a polymer such as a cross-linked body of the above resins.
- the above plastic film may be unstretched, or may also be a film on which a monoaxial or a biaxial stretching treatment is performed, depending on necessity.
- a known surface treatment such as a chemical or physical treatment such as a chromate treatment, ozone exposure, flame exposure, high voltage electric exposure, and an ionized ultraviolet treatment, and a coating treatment by an undercoating agent (for example, a tacky substance described later) can be performed on the surface of the base 12 in order to improve adhesiveness, holding properties, etc. with the adjacent layer.
- the same type or different type of base material can be appropriately selected and used as the base 12 , and a base material in which a plurality of types are blended can be used depending on necessity.
- a conductive vapor deposition layer having a thickness of about 30 to 500 ⁇ , containing a metal, an alloy, an oxide of these, or the like can be provided on the base 12 to impart an antistatic function.
- the base 12 may be a single layer or a plurality of layers of two or more.
- a base is suitably used as the base 12 , which at least partially transmits radiation such as an x-ray, an ultraviolet ray, and an electron beam.
- the thickness of the base 12 can be appropriately determined without any special limitation.
- the thickness is generally about 5 to 200 ⁇ m.
- the adhesive that is used for forming the pressure-sensitive adhesive layer 14 is not especially limited, and general pressure-sensitive adhesives such as an acrylic pressure-sensitive adhesive and a rubber pressure-sensitive adhesive can be used, for example.
- the pressure-sensitive adhesive is preferably an acrylic pressure-sensitive adhesive containing an acrylic polymer as a base polymer for clean washing of electronic components such as a semiconductor wafer and glass, which are easily damaged by contamination, with ultrapure water or an organic solvent such as alcohol.
- acrylic polymers include an acrylic polymer in which acrylate is used as a main monomer component.
- acrylate include alkyl acrylate (for example, a straight chain or branched chain alkyl ester having 1 to 30 carbon atoms, and particularly 4 to 18 carbon atoms in the alkyl group such as methylester, ethylester, propylester, isopropylester, butylester, isobutylester, sec-butylester, t-butylester, pentylester, isopentylester, hexylester, heptylester, octylester, 2-ethylhexylester, isooctylester, nonylester, decylester, isodecylester, undecylester, dodecylester, tridecylester, tetradecylester, hexadecylester, octadec
- the acrylic polymer may optionally contain a unit corresponding to a different monomer component copolymerizable with the above-mentioned alkyl ester of (meth) acrylic acid or cycloalkyl ester thereof in order to improve the cohesive force, heat resistance or some other property of the polymer.
- Examples of such a monomer component include carboxyl-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; acid anhydride monomers such as maleic anhydride, and itaconic anhydride; hydroxyl-containing monomers such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxylmethylcyclohexyl)methyl (meth)acrylate; sulfonic acid group containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2-(me
- the acrylic polymer can also contain multifunctional monomers if necessary as the copolymerizable monomer component.
- multifunctional monomers include hexane diol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylol propane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate etc.
- These multifunctional monomers can also be used as a mixture of one or more thereof. From the viewpoint of adhesiveness etc., the use amount of the multifunctional monomer is preferably 30 wt % or less based on the whole monomer components.
- Preparation of the above acrylic polymer can be produced by applying an appropriate method such as solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization to a mixture of one or two or more kinds of component monomers for example.
- the adhesive layer preferably has a composition in which the content of low molecular weight materials is suppressed for prevention of wafer contamination, and since those in which an acrylic polymer having a weight average molecular weight of 300000 g/mol or more, particularly 400000 to 3000000 g/mol as a main component are preferable for such purpose, the adhesive can be made to be an appropriate cross-linked type adhesive, such as an adhesive with internal cross-linking, an adhesive with external cross-linking, etc.
- an external crosslinking agent can be suitably adopted in the pressure-sensitive adhesive.
- the external crosslinking method is specifically a reaction method that involves adding and reacting a crosslinking agent such as a polyisocyanate compound, epoxy compound, aziridine compound, melamine crosslinking agent, urea resin, anhydrous compound, or polyamine, to a carboxyl group-containing polymer.
- a crosslinking agent such as a polyisocyanate compound, epoxy compound, aziridine compound, melamine crosslinking agent, urea resin, anhydrous compound, or polyamine
- the crosslinking agent is preferably incorporated in an amount of about 5 parts by weight or less based on 100 parts by weight of the base polymer.
- the lower limit of the crosslinking agent is preferably 0.1 parts by weight or more.
- the adhesive may be blended not only with the components described above but also with a wide variety of conventionally known additives such as a tackifier, and aging inhibitor, if necessary.
- the thickness of the pressure-sensitive adhesive layer 14 is not particularly limited. However, it is preferably about 1 to 50 ⁇ m for preventing a chip cutting surface from being cracked and also fitting and holding the resin composition layer 16 . It is more preferably 2 to 30 ⁇ m, and further preferably 5 to 25 ⁇ m.
- the tensile modulus of the pressure-sensitive adhesive layer 14 at 23° C. is preferably 0.1 to 5.0 MPa, and more preferably 0.1 to 1.0 MPa. Because the tensile modulus of the pressure-sensitive adhesive layer 14 at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer 14 is 5.0 MPa or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- the T-peeling strength between the pressure-sensitive adhesive layer 14 and the resin composition layer 16 is 0.1 to 5 N/20 mm or more, preferably 0.3 to 5.0 N/20 mm, and more preferably 0.5 to 5.0 N/20 mm, at 23° C. and 300 mm/min. Because the T-peeling strength between the pressure-sensitive adhesive layer 14 and the resin composition layer 16 is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape 11 during dicing can be suppressed. Because the T-peeling strength is 5 N/20 mm or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- the resin composition layer 16 is arranged on the wafer circuit surface, and has a function as a sealing resin to the circuit surface.
- the resin composition layer 16 is used to hold and fix a wafer during wafer grinding.
- the resin composition layer 16 is used to fill the space between the chip and a substrate for loading the chip, and to adhere the chip and the substrate together.
- a resin that is used as the resin composition layer 16 exhibits some degree of fluidity due to heating and the press bonding force to follow the unevenness of the circuit surface, and exerts tackiness by heating in the step of pasting the resin composition layer 16 to the circuit surface of the wafer.
- a resin include a B-stage resin and a pressure-sensitive adhesive.
- Examples of the B-stage resin include a semi-cured epoxy resin.
- Examples of the pressure-sensitive adhesive include a mixture of a binder resin having pressure-sensitive tackiness at a normal temperature, and a thermosetting resin.
- Examples of the binder resin having pressure-sensitive tackiness at a normal temperature include an acrylic resin, a polyester resin, polyvinylether, a urethane resin, and polyamide.
- Examples of the thermosetting resin include an epoxy resin, a polyimide resin, a phenol resin, a urea resin, a melamine resin, and a resorcinol resin, and preferably an epoxy resin.
- the thermosetting resin can be used together with an appropriate curing accelerator. Conventionally known materials can be suitably adopted as the binder resin having pressure-sensitive tackiness at a normal temperature, the thermosetting resin, and the curing accelerator.
- the pressure-sensitive adhesive having components described above exhibits moderate fluidity due to heating and press bonding force, and the resin composition layer 16 can be formed that follows the unevenness of the circuit surface well. It can be used as an adhesive that adheres closely to the back grinding tape 11 to fix the wafer during wafer grinding and that adheres the chip and the substrate for loading the chip. When it is thermally cured, a cured layer with high impact resistance can be finally obtained. In addition, an excellent balance can be achieved between shear strength and peeling strength, and a sufficient adhesive property can be maintained even under a severe heat and humidity condition.
- the resin composition layer 16 preferably has high visible light transmissivity to improve alignment accuracy during dicing.
- the visible light transmissivity of the resin composition layer 16 is preferably in a range of 70 to 99%.
- the thickness (T A ) of the resin composition layer 16 is normally 3 to 150 ⁇ m.
- the ratio (H B /T A ) of the average height (H B ) of the bumps to the thickness (T A ) of the resin composition layer 16 is 1.0/0.8 to 1.0/1.8, and preferably 1.0/1.0 to 1.0/1.5 to suppress the generation of voids and to cover the circuit surface.
- the average height (H B ) of the bumps is the height from the chip surface (the circuit surface excluding the bumps) to the top of the bump, and when there are a plurality of bumps, the height is based on the arithmetical mean thereof.
- the chip surface (the circuit surface excluding the bumps) and the substrate for loading the chip is spaced apart from one another, thereby causing the generation of voids.
- the resin composition layer is too thick, the bump does not penetrate through the resin composition layer, thereby causing poor conductivity.
- the laminated sheet 11 according to the present embodiment can be produced as follows for example.
- the base 12 can be formed with a conventionally known film forming method.
- the film forming method include a calendar film-forming method, a casting method in an organic solvent, an inflation extruding method in a closed system, a T-die extruding method, a co-extruding method, and a dry laminating method.
- a pressure-sensitive adhesive composition solution which is a material for forming the pressure-sensitive adhesive layer 14
- the coating film is dried under a prescribed condition (crosslinked by heating as necessary) to form the pressure-sensitive adhesive layer 14 .
- the coating method is not particularly limited. Examples include roll coating, screen coating, and gravure coating. The drying is performed at a drying temperature of 80 to 150° C. and a drying time of 0.5 to 5 minutes for example.
- the pressure-sensitive adhesive composition may be coated onto a separator to form a coating film, and then the coating film may be dried in the above-described drying condition to form the pressure-sensitive adhesive layer 14 . After that, the pressure-sensitive adhesive layer 14 is pasted on the base 12 together with the separator. With this, the back grinding tape 11 is produced.
- the resin composition layer 16 can be produced as follows for example.
- a pressure-sensitive adhesive composition solution which is a material for forming the resin composition layer 16 .
- the binder resin having pressure-sensitive tackiness at a normal temperature, the thermosetting resin, the curing accelerator, and the like are compounded in the pressure-sensitive adhesive composition, as described above.
- a pressure-sensitive adhesive composition solution is coated onto a base separator to form a coating film having a prescribed thickness, and the coating film is then dried under a prescribed condition to form the resin composition layer 16 (pressure-sensitive adhesive layer).
- the coating method is not particularly limited. Examples include roll coating, screen coating, and gravure coating. The drying is performed at a drying temperature of 70 to 160° C. and a drying time of 1 to 5 minutes for example.
- the pressure-sensitive adhesive composition may be coated onto a separator to form a coating film, and then the coating film may be dried in the above-described drying condition to form the resin composition layer 16 . After that, the resin composition layer 16 is pasted on the base separator together with the separator.
- the separator is peeled from each of the back grinding tape 11 and the resin composition layer 16 , and the resin composition layer 16 is pasted to the back grinding tape 11 so as to face the pressure-sensitive adhesive layer 14 of the back grinding tape 11 .
- Examples of a method of pasting the back grinding tape 11 and the resin composition layer 16 include a pressing method and a laminating method. However, the laminating method is preferable when productivity is considered.
- the laminating temperature is not particularly limited. However, it is preferably 30 to 90° C., and more preferably 60 to 80° C.
- the line pressure is not particularly limited. However, it is preferably 0.1 to 20 kgf/cm 2 , and more preferably 1 to 10 kgf/cm 2 . With this, the laminated sheet 10 according to the present embodiment can be obtained.
- FIGS. 2 to 9 are schematic sectional views showing one example of a method of manufacturing a semiconductor device using the laminated sheet 10 .
- the resin composition layer 16 surface of the laminated sheet 10 is pasted to the circuit surface of a semiconductor wafer 40 to obtain the semiconductor wafer with the laminated sheet (refer to FIG. 2 ).
- the present step is performed while pressing with a pressing unit such as a press bonding roll.
- the pasting temperature during mounting is not particularly limited. However, it preferably ranges from 20 to 100° C.
- the surface where the laminated sheet 10 of the semiconductor wafer 40 with the laminated sheet 10 is not pasted is ground to make the semiconductor wafer 40 with the laminated sheet 10 thin (refer to FIG. 3 ).
- a normal method can be adopted for the thinning process.
- the machine 60 for the thinning process include a grinding machine (back grinding) and a CMP pad. The thinning process is performed until the semiconductor wafer has the desired thickness.
- the dicing tape 20 is then pasted to the ground surface of the thin semiconductor wafer 40 with the laminated sheet 10 to obtain the semiconductor wafer 40 in which the dicing tape 20 and the laminated sheet 10 are pasted together (refer to FIG. 4 ).
- Examples of a method of pasting the ground surface of the thin semiconductor wafer 40 and the dicing tape 20 include a pressing method and a laminating method. However, the laminating method is preferable when productivity is considered.
- the laminating temperature is not particularly limited. However, it is preferably 30 to 50° C., and more preferably 35 to 45° C.
- the line pressure is not particularly limited. However, it is preferably 0.1 to 20 kgf/cm 2 , and more preferably 1 to 10 kgf/cm 2 .
- a conventionally known dicing tape having a base and a pressure-sensitive adhesive layer can be adopted as the dicing tape 20 .
- a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive and a rubber pressure-sensitive adhesive can be adopted as the pressure-sensitive adhesive layer that configures the dicing tape 20 , and an ultraviolet-ray curable-type pressure-sensitive adhesive layer may be adopted.
- the semiconductor wafer 40 in which the dicing tape 20 and the laminated sheet 10 are pasted together is diced from the laminated sheet 10 side using a dicing blade 62 (refer to FIG. 5 ). With this, the semiconductor wafer 40 is cut into individual pieces having a prescribed size to obtain semiconductor chips 42 . In this step, a cutting method called full cutting can be adopted in which the cutting is performed to reach the dicing tape 20 .
- the dicing apparatus used in this step is not particularly limited, and a conventionally known method can be used.
- the laminated sheet 10 is also cut into individual chip pieces together with the semiconductor wafer 40 .
- the pressure-sensitive adhesive tape 30 is then pasted to the laminated sheet 10 (refer to FIG. 6 ).
- the pressure-sensitive adhesive tape 30 is pasted so as to cover a plurality of the laminated sheets 10 that are individualized into chip pieces.
- a conventional known pressure-sensitive adhesive tape can be adopted as the pressure-sensitive adhesive tape 30 as long as the tape has a higher adhering strength between the pressure-sensitive adhesive tape 30 and the base 12 than the adhering strength between the pressure-sensitive adhesive layer 14 and the resin composition layer 16 .
- the pressure-sensitive adhesive tape 30 is peeled from the resin composition layer 16 together with the back grinding tape 11 (refer to FIG. 7 ). Because the back grinding tape 11 is individualized by dicing, a plurality of individualized back grinding tapes 11 are peeled from the resin composition layer 16 together with the pressure-sensitive adhesive tape 30 collectively.
- the dicing tape 20 is irradiated with ultraviolet radiation to decrease adhesive power of the pressure-sensitive adhesive layer.
- a pickup (releasing) of the semiconductor chip 42 is performed to release the semiconductor chip that is obtained by dicing (refer to FIG. 8 ).
- the method of pickup is not particularly limited, and various conventionally known methods can be adopted. Examples include a method of pushing up an individual semiconductor chip 42 from the dicing tape 20 side to pick up the pushed semiconductor chip 42 with a pickup apparatus.
- the picked up semiconductor chip 42 is adhered and fixed to an adherend 44 via the resin composition layer 16 therebetween with a flip-chip bonding method (a flip-chip mounting method) (flip-chip bonding step).
- the semiconductor chip 42 is fixed to the adherend 44 with a normal method in a configuration in which the circuit surface of the semiconductor chip 42 (also referred to as a surface, a circuit pattern forming surface, an electrode forming surface, and the like) is facing the adherend 44 .
- a conductive material (not shown) for bonding that is adhered to a connecting pad of the adherend 44 is melted while the bumps (not shown) that are formed on the circuit surface of the semiconductor chip 42 are contacted and pressed into the conductive material, thereby making it possible to secure the electrical conductivity between the semiconductor chip 42 and the adherend 44 and to fix the semiconductor chip 42 to the adherend 44 .
- the resin composition layer 16 is arranged in the space between the semiconductor chip 42 and the adherend 44 . That is, when the semiconductor chip 42 is loaded, the space between the semiconductor chip 42 and the adherend 44 can be filled with the resin composition layer 16 , and the semiconductor chip 42 and the adherend 44 can be adhered to each other with the resin composition layer 16 .
- Various substrates such as a lead frame and a circuit board (wire circuit board and the like) can be used as the adherend 44 .
- the material of such substrates is not particularly limited. However, examples include a ceramic substrate and a plastic substrate.
- examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.
- the material of the bumps and the conductive material are not particularly limited.
- examples include solders (alloy) such as a tin-lead based metal, a tin-silver based metal, a tin-silver-copper based metal, a tin-zinc based metal and a tin-zinc-bismuth based metal, a gold based metal, and a copper based metal.
- the resin composition layer 16 that is arranged between the flip-chip bonded semiconductor chip 42 and the adherend 44 is thermally cured.
- the curing process can be performed at 165° C. to 185° C. for about a few minutes to 1 hour.
- the second aspect has the same configuration as that of the first aspect except for the items that are described in the present section “ ⁇ Second Aspect>.”
- FIG. 10 is a schematic sectional view showing a laminated sheet according to one embodiment of the second aspect.
- the parts are omitted that are unnecessary for the description, and some parts are enlarged, shrunken, and the like to aid in the description.
- a laminated sheet 100 has a back grinding tape 110 in which a pressure-sensitive adhesive layer 140 is formed on a base 120 , and a resin composition layer 160 that is provided on the pressure-sensitive adhesive layer 140 of the back grinding tape 110 .
- the laminated sheet 100 in which the pressure-sensitive adhesive layer 140 is formed from a radiation curable-type pressure-sensitive adhesive, can be used in any of the following methods (1) to (4) of manufacturing a semiconductor device.
- a method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- a method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, irradiating the laminated sheet side with radiation after dicing, pasting a pressure-sensitive adhesive tape to the laminated sheet after irradiating with radiation, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- a method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, irradiating the laminated sheet side with radiation after pasting of the pressure-sensitive adhesive tape, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- a method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, irradiating the laminated sheet side with radiation after dicing, pasting a pressure-sensitive adhesive tape to the laminated sheet after irradiating with radiation, irradiating the laminated sheet side with radiation after pasting of the pressure-sensitive adhesive tape, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- a base that is described in the section of “ ⁇ First Aspect>” such as the base 12 can be used as the base 120 . Therefore, a detailed description of the base 120 is omitted here.
- the pressure-sensitive adhesive layer 140 contains a radiation curable-type pressure-sensitive adhesive.
- the adhesive power of the radiation curable-type pressure-sensitive adhesive can be easily decreased when the degree of crosslinking is increased by irradiation with radiation such as an ultraviolet ray. For example, by irradiating with radiation a portion of the pressure-sensitive adhesive layer 140 where the resin composition layer is pasted, a difference in adhesive power from another portion can be provided.
- the portion of the pressure-sensitive adhesive layer 140 that is formed with an uncured radiation curable-type pressure-sensitive adhesive that is not irradiated with radiation adheres to the resin composition layer 160 , and holding power can be secured during back grinding and dicing of the semiconductor wafer.
- the radiation curable-type pressure-sensitive adhesive can support the resin composition layer 160 for fixing the semiconductor chip to the adherend such as a substrate with a good balance of adhesion and releasing.
- the radiation curable-type pressure-sensitive adhesive having an radiation curable type functional group such as a carbon-carbon double bond and exhibiting adherability can be used without special limitation.
- An example of the radiation curable-type pressure-sensitive adhesive is an addition-type radiation curable-type pressure-sensitive adhesive in which radiation curable type monomer and oligomer components are compounded into a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber pressure-sensitive adhesive.
- the pressure-sensitive adhesive is preferably an acrylic pressure-sensitive adhesive containing an acrylic polymer as a base polymer for clean washing of electronic components such as a semiconductor wafer and glass, which are easily damaged by contamination, with ultrapure water or an organic solvent such as alcohol.
- acrylic polymers include an acrylic polymer in which acrylate is used as a main monomer component.
- acrylate include alkyl acrylate (for example, a straight chain or branched chain alkyl ester having 1 to 30 carbon atoms, and particularly 4 to 18 carbon atoms in the alkyl group such as methylester, ethylester, propylester, isopropylester, butylester, isobutylester, sec-butylester, t-butylester, pentylester, isopentylester, hexylester, heptylester, octylester, 2-ethylhexylester, isooctylester, nonylester, decylester, isodecylester, undecylester, dodecylester, tridecylester, tetradecylester, hexadecylester, octadec
- the acrylic polymer may optionally contain a unit corresponding to a different monomer component copolymerizable with the above-mentioned alkyl ester of (meth)acrylic acid or cycloalkyl ester thereof in order to improve the cohesive force, heat resistance or some other property of the polymer.
- Examples of such a monomer component include carboxyl-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; acid anhydride monomers such as maleic anhydride, and itaconic anhydride; hydroxyl-containing monomers such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxylmethylcyclohexyl)methyl (meth)acrylate; sulfonic acid group containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2-(me
- the acrylic polymer can also contain multifunctional monomers if necessary as the copolymerizable monomer component.
- multifunctional monomers include hexane diol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylol propane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate etc.
- These multifunctional monomers can also be used as a mixture of one or more thereof. From the viewpoint of adhesiveness etc., the use amount of the multifunctional monomer is preferably 30 wt % or less based on the whole monomer components.
- Preparation of the above acrylic polymer can be performed by applying an appropriate manner such as solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization to a mixture of one or two or more kinds of component monomers for example.
- the adhesive layer preferably has a composition in which the content of low molecular weight materials is suppressed for prevention of wafer contamination, and since those in which an acrylic polymer having a weight average molecular weight of 300000 g/mol or more, particularly 400000 to 3000000 g/mol as a main component are preferable for such purpose, the adhesive can be made to be an appropriate cross-linked type adhesive, such as an adhesive with internal cross-linking, an adhesive with external cross-linking, etc.
- an external crosslinking agent can be suitably adopted in the adhesive.
- the external crosslinking method is specifically a reaction method that involves adding and reacting a crosslinking agent such as a polyisocyanate compound, epoxy compound, aziridine compound, melamine crosslinking agent, urea resin, anhydrous compound, or polyamine, to a carboxyl group-containing polymer.
- a crosslinking agent such as a polyisocyanate compound, epoxy compound, aziridine compound, melamine crosslinking agent, urea resin, anhydrous compound, or polyamine
- the crosslinking agent is preferably incorporated in an amount of about 5 parts by weight or less based on 100 parts by weight of the base polymer.
- the lower limit of the crosslinking agent is preferably 0.1 parts by weight or more.
- the adhesive may be blended not only with the components described above but also with a wide variety of conventionally known additives such as a tackifier, and an aging inhibitor, if necessary.
- the radiation curable type monomer component to be compounded examples include components such as an urethane oligomer, urethane(meth)acrylate, trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butane dioldi(meth)acrylate.
- components such as an urethane oligomer, urethane(meth)acrylate, trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaeryth
- the radiation curable type oligomer component includes various types of oligomers such as an urethane based, a polyether based, a polyester based, a polycarbonate based, and a polybutadiene based oligomer, and its molecular weight is appropriately in a range of about 100 to 30,000 g/mol.
- the compounding amount of the radiation curable type monomer component and the oligomer component can be appropriately determined to an amount in which the adhesive strength of the adhesive layer can be decreased depending on the type of the adhesive layer. Generally, it is for example 5 to 500 parts by weight, and preferably about 40 to 150 parts by weight based on 100 parts by weight of the base polymer such as an acrylic polymer constituting the adhesive.
- the radiation curable-type pressure-sensitive adhesive includes an intrinsic-type radiation curable-type pressure-sensitive adhesive using an acrylic polymer having a radical reactive carbon-carbon double bond in the polymer side chain, in the main chain, or at the end of the main chain as the base polymer.
- the intrinsic-type radiation curable-type pressure-sensitive adhesives are preferable because they do not have to contain the oligomer component, etc. that is a low molecular weight component, or most of them do not contain the oligomer component, and they can form an adhesive layer having a stable layer structure without the oligomer component, etc. migrating in the adhesive over time.
- the above-mentioned base polymer which has a carbon-carbon double bond, may be any polymer that has a carbon-carbon double bond and further is viscous.
- a polymer having an acrylic polymer as a basic skeleton is preferable.
- the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.
- the method for introducing a carbon-carbon double bond into anyone of the above-mentioned acrylic polymers is not particularly limited, and may be selected from various methods.
- the introduction of the carbon-carbon double bond into a side chain of the polymer is easier in molecule design.
- the method is, for example, a method of copolymerizing a monomer having a functional group with an acrylic polymer, and then causing the resultant to condensation-react or addition-react with a compound having a functional group reactive with the above-mentioned functional group and a carbon-carbon double bond while keeping the ultraviolet ray curability of the carbon-carbon double bond.
- Examples of the combination of these functional groups include a carboxylic acid group and an epoxy group; a carboxylic acid group and an aziridine group; and a hydroxyl group and an isocyanate group. Of these combinations, the combination of a hydroxyl group and an isocyanate group is preferable for ease of reaction tracing. If the above-mentioned acrylic polymer, which has a carbon-carbon double bond, can be produced by the combination of these functional groups, each of the functional groups may be present on any one of the acrylic polymer and the above-mentioned compound. It is preferable for the above-mentioned preferable combination that the acrylic polymer has the hydroxyl group and the above-mentioned compound has the isocyanate group.
- Examples of the isocyanate compound in this case, which has a carbon-carbon double bond, include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate.
- the used acrylic polymer may be an acrylic polymer copolymerized with any one of the hydroxyl-containing monomers exemplified above, or an ether compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether.
- the intrinsic type radiation curable-type pressure-sensitive adhesive may be made only of the above-mentioned base polymer (in particular, the acrylic polymer), which has a carbon-carbon double bond.
- the above-mentioned radiation curable type monomer component or oligomer component may be incorporated into the base polymer to such an extent that properties of the adhesive are not deteriorated.
- the amount of the radiation curable type oligomer component or the like is usually 30 parts or less by weight, preferably from 0 to 10 parts by weight for 100 parts by weight of the base polymer.
- a photopolymerization initiator is incorporated into the adhesive.
- the photopolymerization initiator include ⁇ -ketol compounds such as 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, ⁇ -hydroxy- ⁇ , ⁇ ′-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexyl phenyl ketone; acetophenone compounds such as methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether; ketal compounds such as benzyl dimethyl ketal
- the radiation curable-type pressure-sensitive examples include a rubber adhesive and an acrylic adhesive, that are disclosed in Japanese Patent Application Laid-Open No. 60-196956, containing an addition-polymerizable compound having two or more unsaturated bonds, a photopolymerizable compound such as alkoxysilane having an epoxy group, and a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, or an onium salt compound.
- a rubber adhesive and an acrylic adhesive that are disclosed in Japanese Patent Application Laid-Open No. 60-196956, containing an addition-polymerizable compound having two or more unsaturated bonds, a photopolymerizable compound such as alkoxysilane having an epoxy group, and a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, or an onium salt compound.
- the thickness of the pressure-sensitive adhesive layer 140 is not particularly limited. However, it is preferably about 1 to 50 ⁇ m for preventing a chip cutting surface from being cracked and also fitting and holding the resin composition layer 160 . It is more preferably 2 to 30 ⁇ m, and further preferably 5 to 25 ⁇ m.
- the tensile modulus of the pressure-sensitive adhesive layer 140 before radiation curing at 23° C. is preferably 0.1 to 5.0 MPa, and more preferably 0.1 to 1.0 MPa.
- the tensile modulus of the pressure-sensitive adhesive layer 140 before radiation curing at 23° C. is 0.1 to 5.0 MPa, chip flying from the back grinding tape 110 during dicing can be suppressed.
- the T-peeling strength between the pressure-sensitive adhesive layer 140 and the resin composition layer 160 before radiation curing is 0.1 to 5 N/20 mm or more, preferably 0.3 to 5.0 N/20 mm, and more preferably 0.5 to 5.0 N/20 mm, at 23° C. and 300 mm/min. Because the T-peeling strength between the pressure-sensitive adhesive layer 140 and the resin composition layer 160 before radiation curing is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape 110 during dicing can be suppressed.
- the T-peeling strength between the pressure-sensitive adhesive layer 140 and the resin composition layer 160 before radiation curing is 0.1 to 20 N/20 mm or more, preferably 0.3 to 5.0 N/20 mm, and more preferably 0.5 to 5.0 N/20 mm, at 23° C. and 300 mm/min. Because the T-peeling strength between the pressure-sensitive adhesive layer 140 and the resin composition layer 160 before radiation curing is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape 110 during dicing can be suppressed.
- the T-peeling strength between the pressure-sensitive adhesive layer 140 and the resin composition layer 160 after radiation curing is 0.01 to 5 N/20 mm or more, preferably 0.01 to 1.0 N/20 mm, and more preferably 0.01 to 0.5N/20 mm, at 23° C. and 300 mm/min. Because the T-peeling strength after radiation curing is 5 N/20 mm or less, the pressure-sensitive adhesive tape 30 can be peeled from the resin composition layer 160 together with the back grinding tape 110 collectively.
- a resin composition layer that is described in the section of “ ⁇ First Aspect>” such as the resin composition layer 16 can be used as the resin composition layer 160 . Therefore, a detailed description of the resin composition layer 160 is omitted here.
- a method of manufacturing laminated sheet that is described in the section of “ ⁇ First Aspect>” can be used as the method of manufacturing laminated sheet 100 . Therefore, a detailed description of the method of manufacturing laminated sheet 100 is omitted here.
- FIGS. 11 to 20 are schematic sectional views showing one example of a method of manufacturing a semiconductor device using the laminated sheet 100 .
- the resin composition layer 160 surface of the laminated sheet 100 is pasted to the circuit surface of the semiconductor wafer 400 to obtain a semiconductor wafer with a laminated sheet (refer to FIG. 11 ).
- the present step is performed while pressing with a pressing unit such as a press bonding roll.
- the pasting temperature during mounting is not particularly limited. However, it preferably ranges from 20 to 100° C.
- the surface where the laminated sheet 100 of the semiconductor wafer 400 with the laminated sheet 100 is not pasted is ground to make the semiconductor wafer 400 with the laminated sheet 100 thin (refer to FIG. 12 ).
- a normal method can be adopted for the thinning process.
- the machine 600 for the thinning process include a grinding machine (back grinding) and a CMP pad. The thinning process is preformed until the semiconductor wafer has the desired thickness.
- the dicing tape 200 is then pasted to the ground surface of the thin semiconductor wafer 400 with the laminated sheet 100 to obtain the semiconductor wafer 400 in which the dicing tape 200 and the laminated sheet 100 are pasted together (refer to FIG. 13 ).
- Examples of a method of pasting the ground surface of the thin semiconductor wafer 400 and the dicing tape 200 include a pressing method and a laminating method. However, the laminating method is preferable when productivity is considered.
- the laminating temperature is not particularly limited. However, it is preferably 30 to 50° C., and more preferably 35 to 45° C.
- the line pressure is not particularly limited. However, it is preferably 0.1 to 20 kgf/cm 2 , and more preferably 1 to 10 kgf/cm 2 .
- a conventionally known dicing tape having a base and a pressure-sensitive adhesive layer can be adopted as the dicing tape 200 .
- a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive and a rubber pressure-sensitive adhesive can be adopted as the pressure-sensitive adhesive layer that configures the dicing tape 200 , and an ultraviolet-ray curable-type pressure-sensitive adhesive layer may be adopted.
- the semiconductor wafer 400 in which the dicing tape 200 and the laminated sheet 100 are pasted together is diced from the laminated sheet 100 side using a dicing blade 620 (refer to FIG. 14 ). With this, the semiconductor wafer 400 is cut into individual pieces having a prescribed size to obtain semiconductor chips 420 . In this step, a cutting method called full cutting can be adopted in which the cutting is performed to reach the dicing tape 200 .
- the dicing apparatus used in this step is not particularly limited, and a conventionally known method can be used.
- the laminated sheet 100 is also cut into individual chip pieces together with the semiconductor wafer 400 .
- the laminated sheet 100 side is irradiated with radiation as necessary (when the method (2) or (4) of manufacturing a semiconductor device is adopted) (refer to FIG. 15 ). With this, the pressure-sensitive adhesive layer 14 is cured and the adhesive power decreases.
- the irradiation amount of the radiation for example, the irradiance of an ultraviolet ray at a wavelength of 10 to 400 nm is within a range from 10 to 1000 mW/cm 2 (preferably 20 to 200 mW/cm 2 ) and the accumulative radiant exposure of the ultraviolet ray is within a range from 10 to 50 mJ/cm 2 (preferably 30 to 50 mJ/cm 2 ).
- the irradiation conditions may be adopted such that the irradiance is within a range from 10 to 1000 mW/cm 2 (preferably 20 to 200 mW/cm 2 ) and the accumulative radiant exposure of the ultraviolet ray is within a range from 10 to 50 mJ/cm 2 (preferably 30 to 50 mJ/cm 2 ).
- the pressure-sensitive adhesive tape 300 is then pasted to the laminated sheet 100 (refer to FIG. 16 ).
- the pressure-sensitive adhesive tape 300 is pasted so as to cover a plurality of the laminated sheets 100 that are individualized into chip pieces.
- a conventional known pressure-sensitive adhesive tape can be adopted as the pressure-sensitive adhesive tape 300 as long as the tape has a higher adhering strength between the pressure-sensitive adhesive tape 300 and the base 120 than the adhering strength between the pressure-sensitive adhesive layer 140 and the resin composition layer 160 .
- the laminated sheet 100 side is irradiated with an ultraviolet ray as necessary (when the method (3) or (4) of manufacturing a semiconductor device is adopted) (refer to FIG. 17 ). With this, the pressure-sensitive adhesive layer 14 is cured and the adhesive power decreases.
- the irradiation amount of the radiation for example, the irradiance of an ultraviolet ray at a wavelength of 10 to 400 nm is within a range from 10 to 1000 mW/cm 2 (preferably 20 to 200 mW/cm 2 ) and the accumulative radiant exposure of the ultraviolet ray is within a range from 100 to 1000 mJ/cm 2 (preferably 400 to 1000 mJ/cm 2 ).
- the irradiation conditions may be adopted that the irradiance is within a range from 10 to 1000 mW/cm 2 (preferably 20 to 200 mW/cm 2 ) and the accumulative radiant exposure of the ultraviolet ray is within a range from 100 to 1000 mJ/cm 2 (preferably 400 to 1000 mJ/cm 2 ).
- the pressure-sensitive adhesive tape 300 is peeled from the resin composition layer 160 together with the back grinding tape 110 (refer to FIG. 18 ). Because the back grinding tape 110 is individualized by dicing, a plurality of individualized back grinding tapes 110 are peeled from the resin composition layer 160 together with the pressure-sensitive adhesive tape 300 collectively.
- the dicing tape 200 is irradiated with an ultraviolet ray to decrease adhesive power of the pressure-sensitive adhesive layer.
- a pickup (releasing) of the semiconductor chip 420 is performed to release the semiconductor chip that is obtained by dicing (refer to FIG. 19 ).
- the method of pickup is not particularly limited, and various conventionally known methods can be adopted. Examples include a method of pushing up an individual semiconductor chip 420 from the dicing tape 200 side to pick up the pushed semiconductor chip 420 with a pickup apparatus.
- the picked up semiconductor chip 420 is adhered and fixed to an adherend 440 via the resin composition layer 160 therebetween with a flip-chip bonding method (a flip-chip mounting method) (flip-chip bonding step).
- the semiconductor chip 420 is fixed to the adherend 440 with a normal method in a configuration in which the circuit surface of the semiconductor chip 420 (also referred to as a surface, a circuit pattern forming surface, an electrode forming surface, and the like) is facing the adherend 440 .
- a conductive material (not shown) for bonding that is adhered to a connecting pad of the adherend 440 is melted while the bumps (not shown) that are formed on the circuit surface of the semiconductor chip 420 are contacted and pressed into the conductive material, thereby making it possible to secure the electrical conductivity between the semiconductor chip 420 and the adherend 440 and to fix the semiconductor chip 420 to the adherend 440 .
- the resin composition layer 160 is arranged in the space between the semiconductor chip 420 and the adherend 440 .
- the space between the semiconductor chip 420 and the adherend 440 can be filled with the resin composition layer 160 , and the semiconductor chip 420 and the adherend 440 can be adhered to each other with the resin composition layer 160 .
- Various substrates such as a lead frame and a circuit board (wire circuit board and the like) can be used as the adherend 440 .
- the material of such substrates is not particularly limited. However, examples include a ceramic substrate and a plastic substrate.
- examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.
- the material of the bumps and the conductive material are not particularly limited.
- examples include solders (alloy) such as a tin-lead based metal, a tin-silver based metal, a tin-silver-copper based metal, a tin-zinc based metal and a tin-zinc-bismuth based metal, a gold based metal, and a copper based metal.
- the resin composition layer 160 that is arranged between the flip-chip bonded semiconductor chip 420 and the adherend 440 is thermally cured.
- the curing process can be performed at 165° C. to 185° C. for about a few minutes to 1 hour.
- the irradiation with an ultraviolet ray is performed after dicing, and the irradiation with an ultraviolet ray is not performed after pasting of the pressure-sensitive adhesive tape 300 .
- the method (2) of manufacturing a semiconductor device is preferable in the respect that peeling power can be decreased when the pressure-sensitive adhesive tape is peeled from the resin composition layer together with the back grinding tape collectively and the peeling can be made easy.
- the irradiation with an ultraviolet ray is not performed after dicing, and the irradiation with an ultraviolet ray is performed after pasting of the pressure-sensitive adhesive tape 300 .
- the method (3) of manufacturing a semiconductor device is preferable in the respects that the adhesion power between the pressure-sensitive adhesive tape and the back grinding tape can be improved and that peeling power can be decreased when the pressure-sensitive adhesive tape is peeled from the resin composition layer together with the back grinding tape collectively and the peeling can be made easy.
- the irradiation with an ultraviolet ray is performed after dicing, and the irradiation with an ultraviolet ray is performed also after pasting of the pressure-sensitive adhesive tape 300 .
- the method (4) of manufacturing a semiconductor device is preferable in the respects that the adhesion power between the pressure-sensitive adhesive tape and the back grinding tape can be improved and that peeling power can be decreased when the pressure-sensitive adhesive tape is peeled from the resin composition layer together with the back grinding tape collectively and the peeling can be made easy.
- the radiation is an ultraviolet ray
- the present invention is not limited to this example, and the radiation may be an x-ray, an electron beam, or the like.
- a pressure-sensitive adhesive corresponding to the radiation that is used such as an x-ray curable-type pressure-sensitive adhesive and an electron beam curable-type pressure-sensitive adhesive can be used.
- Epoxy resin A Naphthalene type epoxy resin having an epoxy group equivalent of 142 g/eq (product name: HP4032D manufactured by DIC Corporation)
- Epoxy resin B Triphenol methane type epoxy resin having an epoxy group equivalent of 169 g/eq (product name: EPPN501HY manufactured by Nippon Kayaku Co., Ltd.)
- Phenol novolak resin Aralkyl type phenol resin having an epoxy group equivalent of 175 g/eq (product name: MEH-7800M/MEH-7800SS manufactured by Meiwa Plastic Industries, Ltd.)
- Acrylic resin Copolymer of ethylacrylate, butylacrylate, and acrylonitrile having a weight average molecular weight of 450,000 g/mol (product name: TEISAN RESIN SG-P3 manufactured by Nagase ChemteX Corporation)
- Triphenylphosphine product name: TPP-K manufactured by Hokko Chemical Co., Ltd.
- the pressure-sensitive adhesive composition solution A was coated on a PET film having a thickness of 50 ⁇ m, and dried by heating to form a pressure-sensitive adhesive layer A having a thickness of 30 ⁇ m.
- a tape in which the pressure-sensitive adhesive layer A was formed on the PET film was defined as a back grinding tape A.
- a polyisocyanate crosslinking agent (trade name “Coronate L”, manufactured by Nippon Polyurethane Industry Co., Ltd.) was added to 100 parts of the acrylic polymer B′ to obtain a pressure-sensitive adhesive composition solution B.
- the pressure-sensitive adhesive composition solution B was coated on a PET film having a thickness of 50 ⁇ m, and dried by heating to form a pressure-sensitive adhesive layer B having a thickness of 30 ⁇ m.
- a tape in which the pressure-sensitive adhesive layer B was formed on the PET film was defined as a back grinding tape B.
- the pressure-sensitive adhesive composition solution C was coated on a PET film having a thickness of 50 ⁇ m, and dried by heating to form a pressure-sensitive adhesive layer C having a thickness of 30 ⁇ m. Thereafter, the pressure-sensitive adhesive layer C was irradiated with an ultraviolet ray of 400 mJ/cm 2 to obtain a back grinding tape C.
- the tensile modulus of each of the pressure-sensitive adhesive layers A to C was measured.
- the tensile modulus was obtained from a value calculated from a tangent of a load-elongation curve measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation).
- the measurement conditions were as follows: a distance between chucks was 10 mm and a tensile speed was 50 mm/min. The result is shown in Table 1.
- the pressure-sensitive adhesive surface of the back grinding tape A and the resin composition layer were pasted together under conditions of a pasting speed of 0.6 m/min, a roller temperature of 25° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc. to produce a laminated sheet A.
- the laminated sheet A was defined as a laminated sheet according to Example 1.
- the resin composition layer was pasted to each of the back grinding tapes B and C in the same manner to produce laminated sheets B and C.
- the laminated sheet B was defined as a laminated sheet according to Comparative Example 1.
- the laminated sheet C was defined as a laminated sheet according to Comparative Example 2.
- the T-peeling strength between the pressure-sensitive adhesive layer of each of the laminated sheets A to C and the resin composition layer was measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The peeling speed was 300 mm/min. The result is shown in Table 1.
- the laminated sheets A to C were produced in the same manner as described above.
- the resin composition layer surface of the laminated sheet and the mirror surface of a wafer were pasted together under conditions of a pasting speed of 0.6 m/min, a roller temperature of 70° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc.
- a one-side mirror-finished 8 inch wafer manufactured by Synergy-Tech Co., Ltd. was used.
- the pasted laminated sheet was cut into a wafer shape, and the surface of the wafer with the laminated sheet was ground to a thickness of 200 ⁇ m using a back grinding machine manufactured by DISCO Corporation.
- the ground surface of the wafer with the laminated sheet and the pressure-sensitive adhesive surface of a dicing tape (DU-300 manufactured by Nitto Denko Corporation) were pasted together under conditions of a pasting speed of 0.6 m/min, a roller temperature of 25° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc.
- a pressure-sensitive adhesive tape (BT-315 manufactured by Nitto Denko Corporation) was pasted to the back grinding tape surface of the wafer with the dicing tape under conditions of a pasting speed of 0.6 m/min, a roller temperature of 25° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co. , Inc. Then, the pressure-sensitive adhesive tape was pulled using a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation) with a T-peeling method at a peeling speed of 300 mm/min.
- AVS-J Tensilon tensile tester
- Example 1 Example 2 Tensile Modulus [MPa] 4.3 0.15 6.7 T-Peeling Strength [N/20 mm] 0.21 8.0 or more 0.085 Evaluation of Chip Flying from ⁇ ⁇ x Back Grinding Tape During Dicing Evaluation of Peeling ⁇ x — Property of Back Grinding Tape
- Epoxy resin A Naphthalene type epoxy resin having an epoxy group equivalent of 142 g/eq (product name: HP4032D manufactured by DIC Corporation)
- Epoxy resin B Triphenol methane type epoxy resin having an epoxy group equivalent of 169 g/eq (product name: EPPN501HY manufactured by Nippon Kayaku Co., Ltd.)
- Phenol novolak resin Aralkyl type phenol resin having an epoxy group equivalent of 175 g/eq (product name: MEH-7800M/MEH-7800SS manufactured by Meiwa Plastic Industries, Ltd.)
- Acrylic resin Copolymer of ethylacrylate, butylacrylate, and acrylonitrile having a weight average molecular weight of 450,000 g/mol (product name: TEISAN RESIN SG-P3 manufactured by Nagase ChemteX Corporation)
- Triphenylphosphine product name: TPP-K manufactured by Hokko Chemical Co., Ltd.
- the pressure-sensitive adhesive composition solution A was coated on a PET film having a thickness of 50 ⁇ m, and dried by heating to form a pressure-sensitive adhesive layer A having a thickness of 30 ⁇ m.
- a tape in which the pressure-sensitive adhesive layer A was formed on the PET film was defined as a back grinding tape A.
- the same back grinding tape as the back grinding tape A of Example 1 was defined as a back grinding tape B according to Example 2.
- the pressure-sensitive adhesive layer that configures the back grinding tape B was defined as a pressure-sensitive adhesive layer B.
- the back grinding tape B according to Example 2 was irradiated with an ultraviolet ray of 50 mJ/cm 2 after dicing and before pasting of the pressure-sensitive adhesive tape as described later, and used.
- the same back grinding tape as the back grinding tape A of Example 1 was defined as a back grinding tape C according to Example 3.
- the pressure-sensitive adhesive layer that configures the back grinding tape C was defined as a pressure-sensitive adhesive layer C.
- the back grinding tape C according to Example 3 was irradiated with an ultraviolet ray of 400 mJ/cm 2 after pasting of the pressure-sensitive adhesive tape as described later, and used.
- the same back grinding tape as the back grinding tape A of Example 1 was defined as a back grinding tape D according to Example 4.
- the pressure-sensitive adhesive layer that configures the back grinding tape D was defined as a pressure-sensitive adhesive layer D.
- the back grinding tape D according to Example 4 was irradiated with an ultraviolet ray of 50 mJ/cm 2 after dicing and before pasting of the pressure-sensitive adhesive tape, further irradiated with an ultraviolet ray of 400 mJ/cm 2 after pasting of the pressure-sensitive adhesive tape, and used.
- the pressure-sensitive adhesive composition solution E was coated on a PET film having a thickness of 50 ⁇ m, and dried by heating to form a pressure-sensitive adhesive layer E having a thickness of 30 ⁇ m.
- a tape in which the pressure-sensitive adhesive layer E was formed on the PET film was defined as a back grinding tape E.
- the base film surface (PET film surface) side of the back grinding tape A of Example 1 was irradiated with an ultraviolet ray of 400 mJ/cm 2 using an UV irradiation apparatus (Nitto Seiki Co., Ltd.). This was defined as a back grinding tape F.
- the pressure-sensitive adhesive layer that configures the back grinding tape F was defined as a pressure-sensitive adhesive layer F.
- the same back grinding tape as the back grinding tape A of Example 1 was defined as a back grinding tape G according to Comparative Example 3.
- the pressure-sensitive adhesive layer that configures the back grinding tape G was defined as a pressure-sensitive adhesive layer G.
- the back grinding tape G according to Comparative Example 3 was irradiated with an ultraviolet ray of 400 mJ/cm 2 after dicing and before pasting of the pressure-sensitive adhesive tape as described later, and used.
- the tensile modulus of each of the pressure-sensitive adhesive layers A to G was measured.
- the tensile modulus was obtained from a value calculated from a tangent of a load-elongation curve measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation).
- the measurement conditions were as follows: a distance between chucks was 10 mm and a tensile speed was 50 mm/min. The result is shown in Table 2.
- the pressure-sensitive adhesive surface of the back grinding tape A and the resin composition layer were pasted together under conditions of a pasting speed of 0.6 m/min, a roller temperature of 25° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc. to produce a laminated sheet A.
- the laminated sheet A was defined as a laminated sheet according to Example 1.
- the resin composition layer was pasted to each of the back grinding tapes B to G in the same manner to produce laminated sheets B to G.
- the laminated sheet B was defined as a laminated sheet according to Example 2.
- the laminated sheet C was defined as a laminated sheet according to Example 3.
- the laminated sheet D was defined as a laminated sheet according to Example 4.
- the laminated sheet E was defined as a laminated sheet according to Comparative Example 1.
- the laminated sheet F was defined as a laminated sheet according to Comparative Example 2.
- the laminated sheet G was defined as a
- the T-peeling strength between the pressure-sensitive adhesive layer of each of the laminated sheets A to G and the resin composition layer was measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The peeling speed was 300 mm/min. The result is shown in Table 2.
- the laminated sheets A to G were produced in the same manner as described above.
- the resin composition layer surface of the laminated sheet and the mirror surface of a wafer were pasted together under conditions of a pasting speed of 0.6 m/min, a roller temperature of 70° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc.
- a one-side mirror-finished 8 inch wafer manufactured by Synergy-Tech Co., Ltd. was used.
- the pasted laminated sheet was cut into a wafer shape, and the surface of the wafer with the laminated sheet was ground to a thickness of 200 ⁇ m using a back grinding machine manufactured by DISCO Corporation.
- the ground surface of the wafer with the laminated sheet and the pressure-sensitive adhesive surface of a dicing tape (DU-300 manufactured by Nitto Denko Corporation) were pasted together under conditions of a pasting speed of 0.6 m/min, a roller temperature of 25° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc.
- the pressure-sensitive adhesive layer of each of the laminated sheets of Examples 2 and 4 and Comparative Example 3 was irradiated with an ultraviolet ray of an amount described in Table 2 (ultraviolet ray irradiation (1)). Thereafter, the tensile modulus of each pressure-sensitive adhesive layer was determined. Specifically, the tensile modulus was obtained from a value calculated from a tangent of a load-elongation curve measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The measurement conditions were as follows: a distance between chucks was 10 mm and a tensile speed was 50 mm/min. The results are shown in Table 2.
- the T-peeling strength between the pressure-sensitive adhesive layer of each of the laminated sheets and the resin composition layer was measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The peeling speed was 300 mm/min. The result is shown in Table 2.
- a pressure-sensitive adhesive tape (BT-315 manufactured by Nitto Denko Corporation) was pasted to the back grinding tape surface of the wafer with a dicing tape under conditions of a pasting speed of 0.6 m/min, a roller temperature of 25° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc. Then, the pressure-sensitive adhesive layer of each of the laminated sheets of Examples 3 and 4 was irradiated with an ultraviolet ray of an amount described in Table 2 (ultraviolet ray irradiation (2)). Thereafter, the tensile modulus of each pressure-sensitive adhesive layer was determined.
- the tensile modulus was obtained from a value calculated from a tangent of a load-elongation curve measured by with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The measurement conditions were as follows: a distance between chucks was 10 mm and a tensile speed was 50 mm/min. The results are shown in Table 2.
- the T-peeling strength between the pressure-sensitive adhesive layer of each of the laminated sheets and the resin composition layer was measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The peeling speed was 300 ram/min. The results are shown in Table 2.
- the pressure-sensitive adhesive tape was pulled using a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation) with a T-peeling method at a peeling speed of 300 mm/min.
- the cases in which the back grinding tape was peeled from the resin composition layer with a condition that it was pasted to the pressure-sensitive adhesive tape were marked “O”, and the cases in which the back grinding tape was not peeled from the resin composition layer with a condition that it was pasted to the pressure-sensitive adhesive tape were marked “x”.
- the laminated sheet F was not evaluated because chip flying from the back grinding tape occurred during dicing. The results are shown in Table 2.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
Abstract
Description
- This application claims priority to U.S. patent application Ser. No. 13/712,707, filed Dec. 12, 2012, entitled “Laminated Sheet and Method of Manufacturing Semiconductor Device Using the Laminated Sheet” which is hereby incorporated by reference in its entirety for all purposes.
- 1. Field of the Invention
- The present invention relates to a laminated sheet and a method of manufacturing a semiconductor device using the laminated sheet.
- 2. Description of the Related Art
- In recent years, thinning and downsizing of a semiconductor device and its packaging have been further required. Because of that, a flip-chip semiconductor device, in which a semiconductor element such as a semiconductor chip is mounted on a substrate by flip-chip bonding, has been widely used for semiconductor devices and their packaging. In flip-chip bonding, a circuit surface of a semiconductor chip is fixed to an electrode forming surface of the substrate in such a way that the circuit surface is facing the electrode forming surface.
- After flip-chip bonding, a space is formed between the semiconductor element and the substrate, and the space has been conventionally filled with a sealing material such as a sealing resin. However, there is a problem that a long process time is required because the space between the semiconductor element and the substrate is generally narrow and it is difficult to impregnate a liquid sealing material in the space without generating voids.
- A method is disclosed in, for example, JP-A-9-213741, JP-A-10-242208, and JP-A-10-270497 of using an adhesive film as a sealing material and adhering a semiconductor element and a substrate via the adhesive film therebetween to seal the space between the semiconductor element and the substrate conveniently and securely.
- Due to the requirement for thinning and downsizing of a semiconductor device and its packaging, a semiconductor element has been conventionally ground thin. A method of manufacturing a semiconductor device is disclosed in JP-A-2002-118147 and JP-A-2008-130588, including the steps of grinding a semiconductor element thin and sealing a space between the semiconductor element and the substrate using an adhesive film.
- A method of mounting a semiconductor chip to a printed circuit board is disclosed in JP-A-2002-118147, including the following steps [a] to [g]: [a] manufacturing a sheet for mounting a semiconductor chip in which a thermosetting resin layer is provided on one surface of a synthetic resin film, [b] press bonding the thermosetting resin layer of the sheet for mounting a semiconductor chip onto a surface where bump electrodes of a semiconductor wafer are provided, [c] grinding the backside of the semiconductor wafer on which the sheet for mounting a semiconductor chip is press bonded to obtain the desired thickness of the semiconductor wafer, [d] dicing into individual pieces the semiconductor wafer of which the backside is ground with the sheet for mounting a semiconductor chip being press bonded, [e] peeling the synthetic resin film of the sheet for mounting a semiconductor chip that is press bonded onto the bump electrode surface of the semiconductor chip that is obtained by dicing, [f] determining the position of the bump electrodes of the semiconductor chip so that they are correctly facing and contacting the corresponding terminals on the printed circuit board, and [g] bonding the bump electrodes of the semiconductor chip to the corresponding terminals on the printed circuit board and thermally curing the thermosetting resin.
- In JP-A-2002-118147, the semiconductor wafer is diced into individual pieces with the sheet for mounting a semiconductor chip being press bonded ([d]), and then the synthetic resin film is peeled off the sheet for mounting a semiconductor chip that is press bonded onto the bump electrode surface of the semiconductor chip that is obtained by dicing. However, greater man-hours are required because the synthetic resin film that is also diced into individual pieces cannot be peeled from a plurality of the semiconductor chips collectively and has to be peeled individually.
- A method of manufacturing an electronic device system is disclosed in JP-A-2008-130588, using an electronic device substrate having a plurality of electronic elements that are not electrically connected to each other, electrodes, and an adhesive composition for a semiconductor that is formed on the surface where the electrodes are formed, and having a plastic film that is laminated onto the adhesive composition for a semiconductor. In this production method, a pressure-sensitive adhesive layer is formed on the adhesive composition for a semiconductor of the electronic device substrate, the surface of the electronic device wafer where electronic elements are not formed is polished, the plastic film is peeled, then the wafer is diced into individual pieces, an individualized electronic element with the adhesive composition for a semiconductor is mounted on a circuit board, and the electrodes formed on the electronic element and the electrodes on the circuit board are directly contacted to each other to be electrically connected.
- However, the plastic film is peeled, and then dicing is performed in JP-A-2008-130588. That is, dicing is performed while the adhesive composition for a semiconductor is exposed. Because of that, water is absorbed by the adhesive composition for a semiconductor during dicing, and it causes a generation of space and voids in a layer of the adhesive composition for a semiconductor during flip-chip mounting. In addition, cut scraps may be attached. Because of these, a decrease in adhering strength and a deterioration in electrical reliability may occur.
- The present invention has been made in view of the above-described problems, and an object thereof is to provide a laminated sheet that can prevent the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability, and in which a back grinding tape can be peeled from a plurality of semiconductor elements collectively after dicing, and a method of manufacturing a semiconductor device using the laminated sheet.
- The present inventors have investigated a laminated sheet and a method of manufacturing a semiconductor device using the laminated sheet to solve the conventional problems. As a result, it has been found that a laminated sheet may be used, which has a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, wherein the tensile modulus of the pressure-sensitive adhesive layer is in a specific range and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is in a specific range, to thereby make it possible to prevent a decrease in adhering strength and a deterioration in electrical reliability and to peel the back grinding tape from a plurality of semiconductor elements collectively after dicing.
- Accordingly, a laminated sheet according to a first aspect of the present invention has a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, wherein the tensile modulus of the pressure-sensitive adhesive layer at 23° C. is 0.1 to 5.0 MPa, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 to 5 N/20 mm at 23° C. and 300 mm/min.
- The laminated sheet is used in a method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- According to the laminated sheet, because dicing is performed while the back grinding tape is pasted onto the resin composition layer as described above, the absorption of water by the resin composition layer during dicing and the attachment of cut scraps to the resin composition layer can be suppressed. As a result, the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented. Because the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed. Because the T-peeling strength is 5 N/20 mm or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer is 5.0 MPa or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- In the above-described configuration, the resin composition layer preferably contains a thermosetting resin. When the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- In the above-described configuration, the thermosetting resin is preferably an epoxy resin.
- A method of manufacturing a semiconductor device according to the first aspect uses a laminated sheet having a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, in which the tensile modulus of the pressure-sensitive adhesive layer at 23° C. is 0.1 to 5.0 MPa, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 to 5 N/20 mm at 23° C. and 300 mm/min, the method including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- Because dicing is performed while the back grinding tape is pasted onto the resin composition layer according to the method of manufacturing a semiconductor device of the first aspect, the absorption of water by the resin composition layer during dicing and the attachment of the cut scraps to the resin composition layer can be suppressed. As a result, the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented. Because the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed. Because the T-peeling strength is 5 N/20 mm or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer is 5.0 MPa or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- In the above-described configuration, the resin composition layer preferably contains a thermosetting resin. When the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- In the above-described configuration, the thermosetting resin is preferably an epoxy resin.
- A laminated sheet according to a second aspect of the present invention has a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, wherein the pressure-sensitive adhesive layer is a radiation curable-type pressure-sensitive adhesive layer, the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 to 5.0 MPa, the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 to 20 N/20 mm at 23° C. and 300 mm/min, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer after radiation curing is 0.01 to 5 N/20 mm at 23° C. and 300 mm/min.
- The laminated sheet is used in any of the following methods (1) to (4) of manufacturing a semiconductor device.
- (1) A method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
(2) A method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, irradiating the laminated sheet side with radiation after dicing, pasting a pressure-sensitive adhesive tape to the laminated sheet after irradiating with radiation, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
(3) A method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, irradiating the laminated sheet side with radiation after pasting of the pressure-sensitive adhesive tape, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
(4) A method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, irradiating the laminated sheet side with radiation after dicing, pasting a pressure-sensitive adhesive tape to the laminated sheet after irradiating with radiation, irradiating the laminated sheet side with radiation after pasting of the pressure-sensitive adhesive tape, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape. - According to the laminated sheet, because dicing is performed while the back grinding tape is pasted onto the resin composition layer as described above, the absorption of water by the resin composition layer during dicing and the attachment of the cut scraps to the resin composition layer can be suppressed. As a result, the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented. Because the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed. Because the T-peeling strength after radiation curing is 5 N/20 mm or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer after radiation curing at 23° C. is 0.1 MPa or more and 5.0 MPa or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- In the above-described configuration, the resin composition layer preferably contains a thermosetting resin. When the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- In the above-described configuration, the thermosetting resin is preferably an epoxy resin.
- A method of manufacturing a semiconductor device according to the second aspect uses a laminated sheet having a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, in which the pressure-sensitive adhesive layer is a radiation-curable type pressure-sensitive adhesive layer, the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 to 5.0 MPa, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 to 5 N/20 mm at 23° C. and 300 mm/min, the method including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- Because dicing is performed while the back grinding tape is pasted onto the resin composition layer according to the method of manufacturing a semiconductor device of the second aspect, the absorption of water by the resin composition layer during dicing and the attachment of the cut scraps to the resin composition layer can be suppressed. As a result, the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented. Because the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed. Because the T-peeling strength is 5 N/20 mm or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing is 5.0 MPa or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- In the above-described configuration, the resin composition layer preferably contains a thermosetting resin. When the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- In the above-described configuration, the thermosetting resin is preferably an epoxy resin.
- The method of manufacturing a semiconductor device according to the second aspect uses a laminated sheet having a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, in which the pressure-sensitive adhesive layer is a radiation-curable type pressure-sensitive adhesive layer, the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 to 5.0 MPa, the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 to 20 N/20 mm at 23° C. and 300 mm/min, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer after radiation curing is 0.01 to 5 N/20 mm at 23° C. and 300 mm/min, the method including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, irradiating the laminated sheet side with radiation after dicing, pasting a pressure-sensitive adhesive tape to the laminated sheet after irradiating with radiation, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- Because dicing is performed while the back grinding tape is pasted onto the resin composition layer according to the method of manufacturing a semiconductor device of the second aspect, the absorption of water by the resin composition layer during dicing and the attachment of the cut scraps to the resin composition layer can be suppressed. As a result, the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented. Because the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed. Because the T-peeling strength after radiation curing is 5 N/20 mm or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 5.0 MPa or less, the irradiating amount is controlled to make the tensile modulus after radiation curing at 23° C. be 0.1 MPa or more and 5.0 MPa or less. As a result, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- In the above-described configuration, the resin composition layer preferably contains a thermosetting resin. When the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- In the above-described configuration, the thermosetting resin is preferably an epoxy resin.
- The method of manufacturing a semiconductor device according to the second aspect uses a laminated sheet having aback grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, in which the pressure-sensitive adhesive layer is a radiation-curable type pressure-sensitive adhesive layer, the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 to 5.0 MPa, the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 to 20 N/20 mm at 23° C. and 300 mm/min, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer after radiation curing is 0.01 to 5 N/20 mm at 23° C. and 300 mm/min, the method including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, irradiating the laminated sheet side with radiation after pasting of the pressure-sensitive adhesive tape, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- Because dicing is performed while the back grinding tape is pasted onto the resin composition layer according to the method of manufacturing a semiconductor device, the absorption of water by the resin composition layer during dicing and the attachment of the cut scraps to the resin composition layer can be suppressed. As a result, the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented. Because the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed. Because the T-peeling strength after radiation curing is 5 N/20 mm or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 5.0 MPa or less, the irradiating amount is controlled to make the tensile modulus after radiation curing at 23° C. be 0.1 MPa or more and 5.0 MPa or less. As a result, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- In the above-described configuration, the resin composition layer preferably contains a thermosetting resin. When the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- In the above-described configuration, the thermosetting resin is preferably an epoxy resin.
- The method of manufacturing a semiconductor device according to the second aspect uses a laminated sheet having a back grinding tape in which a pressure-sensitive adhesive layer is formed on a base, and a resin composition layer that is provided on the pressure-sensitive adhesive layer of the back grinding tape, in which the pressure-sensitive adhesive layer is a radiation-curable type pressure-sensitive adhesive layer, the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 to 5.0 MPa, the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 to 20 N/20 mm at 23° C. and 300 ram/min, and the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer after radiation curing is 0.01 to 5 N/20 mm at 23° C. and 300 ram/min, the method including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, irradiating the laminated sheet side with radiation after dicing, pasting a pressure-sensitive adhesive tape to the laminated sheet after irradiating with radiation, irradiating the laminated sheet side with radiation after pasting of the pressure-sensitive adhesive tape, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
- Because dicing is performed while the back grinding tape is pasted onto the resin composition layer according to the method of manufacturing a semiconductor device of the present invention, the absorption of water by the resin composition layer during dicing and the attachment of the cut scraps to the resin composition layer can be suppressed. As a result, the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability can be prevented. Because the T-peeling strength between the pressure-sensitive adhesive layer and the resin composition layer before radiation curing is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from the back grinding tape during dicing can be suppressed. Because the T-peeling strength after radiation curing is 5 N/20 mm or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer before radiation curing at 23° C. is 5.0 MPa or less, the irradiating amount is controlled to make the tensile modulus after radiation curing at 23° C. be 0.1 MPa or more and 5.0 MPa or less. As a result, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- In the above-described configuration, the resin composition layer preferably contains a thermosetting resin. When the resin composition layer contains a thermosetting resin, it can be used as a sealing material between the semiconductor element and an adherend when the semiconductor element is flip-chip mounted.
- In the above-described configuration, the thermosetting resin is preferably an epoxy resin.
- According to the present invention, a laminated sheet can be provided that can prevent the decrease in adhering strength of the resin composition layer and the deterioration in electrical reliability and in which a back grinding tape can be peeled from a plurality of semiconductor elements collectively after dicing, and a method of manufacturing a semiconductor device using the laminated sheet can be provided.
-
FIG. 1 is a schematic sectional view showing a laminated sheet according to one embodiment of a first aspect; -
FIG. 2 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 1 ; -
FIG. 3 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 1 ; -
FIG. 4 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 1 ; -
FIG. 5 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 1 ; -
FIG. 6 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 1 ; -
FIG. 7 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 1 ; -
FIG. 8 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 1 ; -
FIG. 9 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 1 ; -
FIG. 10 is a schematic sectional view showing a laminated sheet according to one embodiment of a second aspect; -
FIG. 11 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 10 ; -
FIG. 12 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 10 ; -
FIG. 13 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 10 ; -
FIG. 14 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 10 ; -
FIG. 15 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 10 ; -
FIG. 16 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 10 ; -
FIG. 17 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 10 ; -
FIG. 18 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 10 ; -
FIG. 19 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 10 ; and -
FIG. 20 is a schematic sectional view showing one example of a method of manufacturing a semiconductor device using the laminated sheet shown inFIG. 10 . -
- 10, 100 Laminated Sheet
- 11, 110 Back Grinding Tape
- 12, 120 Base
- 14, 140 Pressure-Sensitive Adhesive Layer
- 16, 160 Resin Composition Layer
- 20, 200 Dicing Tape
- 30, 300 Pressure-Sensitive Adhesive Tape
- 40, 400 Semiconductor Taper
- 42, 420 Semiconductor Chip
- An embodiment of a first aspect of the present invention is described referring to the drawings. However, the first aspect is not limited to these examples.
FIG. 1 is a schematic sectional view showing a laminated sheet according to one embodiment of the first aspect. In the drawings, the parts are omitted that are unnecessary for the description, and some parts are enlarged, shrunken, and the like in order to aid in the description. - A
laminated sheet 10 has aback grinding tape 11 in which a pressure-sensitive adhesive layer 14 is formed on abase 12, and aresin composition layer 16 is provided on the pressure-sensitive adhesive layer 14 of theback grinding tape 11. - The
laminated sheet 10, in which the pressure-sensitive adhesive layer 14 is formed with a general pressure-sensitive adhesive, is used in a method of manufacturing a semiconductor device including the following steps. - The method of manufacturing a semiconductor device includes the steps of pasting the
resin composition layer 16 surface of thelaminated sheet 10 to the circuit surface of asemiconductor wafer 40 to obtain thesemiconductor wafer 40 with the laminated sheet 10 (refer toFIG. 2 ), grinding the surface, where thelaminated sheet 10 of thesemiconductor wafer 40 with thelaminated sheet 10 is not pasted, to make thesemiconductor wafer 40 with thelaminated sheet 10 thin (refer toFIG. 3 ), pasting a dicingtape 20 onto the ground surface of thethin semiconductor wafer 40 with thelaminated sheet 10 to obtain thesemiconductor wafer 40 in which the dicingtape 20 and thelaminated sheet 10 are pasted together (refer toFIG. 4 ), dicing thesemiconductor wafer 40 in which the dicingtape 20 and thelaminated sheet 10 are pasted together from thelaminated sheet 10 side (refer toFIG. 5 ), pasting a pressure-sensitive adhesive tape 30 to thelaminated sheet 10 after dicing (refer toFIG. 6 ), and peeling the pressure-sensitive adhesive tape 30 from theresin composition layer 16 together with the back grinding tape 11 (refer toFIG. 7 ). - (Meth)acrylic acid refers to an acrylic acid and/or a methacrylic acid, and hereinafter, every occurrence of (meth) in the present application has the same meaning. A
base 12 serves as a strength base of thelaminated sheet 10. Examples thereof include polyolefin such as low-density polyethylene, straight chain polyethylene, intermediate-density polyethylene, high-density polyethylene, very low-density polyethylene, polypropylene random copolymer, polypropylene block copolymer, homopolypropylene, polybutene, and polymethylpentene; ethylene-vinylacetate copolymer; ionomer resin; ethylene(meth)acrylic acid copolymer; ethylene(meth)acrylic acid ester copolymer; ethylene-butene copolymer; ethylene-hexene copolymer; polyurethane; polyester such as polyethyleneterephthalate and polyethylenenaphthalate; polycarbonate; polyetheretherketone; polyimide; polyetherimide; polyamide; whole aromatic polyamides; polyphenylsulfide; aramid (paper); glass; glass cloth; fluorine resin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; silicone resin; metal (foil); and paper. - Further, the material of the
base 12 includes a polymer such as a cross-linked body of the above resins. The above plastic film may be unstretched, or may also be a film on which a monoaxial or a biaxial stretching treatment is performed, depending on necessity. - A known surface treatment such as a chemical or physical treatment such as a chromate treatment, ozone exposure, flame exposure, high voltage electric exposure, and an ionized ultraviolet treatment, and a coating treatment by an undercoating agent (for example, a tacky substance described later) can be performed on the surface of the base 12 in order to improve adhesiveness, holding properties, etc. with the adjacent layer. The same type or different type of base material can be appropriately selected and used as the
base 12, and a base material in which a plurality of types are blended can be used depending on necessity. A conductive vapor deposition layer having a thickness of about 30 to 500 Å, containing a metal, an alloy, an oxide of these, or the like can be provided on the base 12 to impart an antistatic function. The base 12 may be a single layer or a plurality of layers of two or more. When the pressure-sensitive adhesive layer is a radiation curable-type pressure-sensitive adhesive layer, a base is suitably used as thebase 12, which at least partially transmits radiation such as an x-ray, an ultraviolet ray, and an electron beam. - The thickness of the base 12 can be appropriately determined without any special limitation. The thickness is generally about 5 to 200 μm.
- The adhesive that is used for forming the pressure-sensitive adhesive layer 14 is not especially limited, and general pressure-sensitive adhesives such as an acrylic pressure-sensitive adhesive and a rubber pressure-sensitive adhesive can be used, for example. The pressure-sensitive adhesive is preferably an acrylic pressure-sensitive adhesive containing an acrylic polymer as a base polymer for clean washing of electronic components such as a semiconductor wafer and glass, which are easily damaged by contamination, with ultrapure water or an organic solvent such as alcohol.
- Specific examples of the acrylic polymers include an acrylic polymer in which acrylate is used as a main monomer component. Examples of the acrylate include alkyl acrylate (for example, a straight chain or branched chain alkyl ester having 1 to 30 carbon atoms, and particularly 4 to 18 carbon atoms in the alkyl group such as methylester, ethylester, propylester, isopropylester, butylester, isobutylester, sec-butylester, t-butylester, pentylester, isopentylester, hexylester, heptylester, octylester, 2-ethylhexylester, isooctylester, nonylester, decylester, isodecylester, undecylester, dodecylester, tridecylester, tetradecylester, hexadecylester, octadecylester, and eicosylester) and cycloalkyl acrylate (for example, cyclopentylester, cyclohexylester, etc.). These monomers may be used alone or two or more types may be used in combination.
- The acrylic polymer may optionally contain a unit corresponding to a different monomer component copolymerizable with the above-mentioned alkyl ester of (meth) acrylic acid or cycloalkyl ester thereof in order to improve the cohesive force, heat resistance or some other property of the polymer. Examples of such a monomer component include carboxyl-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; acid anhydride monomers such as maleic anhydride, and itaconic anhydride; hydroxyl-containing monomers such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxylmethylcyclohexyl)methyl (meth)acrylate; sulfonic acid group containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamidepropanesulfonic acid, sulfopropyl (meth)acrylate, and (meth)acryloyloxynaphthalenesulfonic acid; phosphoric acid group containing monomers such as 2-hydroxyethylacryloyl phosphate; acrylamide; and acrylonitrile. These copolymerizable monomer components may be used alone or in combination of two or more thereof. The amount of the copolymerizable monomer(s) to be used is preferably 40% or less by weight of all the monomer components.
- For crosslinking, the acrylic polymer can also contain multifunctional monomers if necessary as the copolymerizable monomer component. Such multifunctional monomers include hexane diol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylol propane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate etc. These multifunctional monomers can also be used as a mixture of one or more thereof. From the viewpoint of adhesiveness etc., the use amount of the multifunctional monomer is preferably 30 wt % or less based on the whole monomer components.
- Preparation of the above acrylic polymer can be produced by applying an appropriate method such as solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization to a mixture of one or two or more kinds of component monomers for example. Since the adhesive layer preferably has a composition in which the content of low molecular weight materials is suppressed for prevention of wafer contamination, and since those in which an acrylic polymer having a weight average molecular weight of 300000 g/mol or more, particularly 400000 to 3000000 g/mol as a main component are preferable for such purpose, the adhesive can be made to be an appropriate cross-linked type adhesive, such as an adhesive with internal cross-linking, an adhesive with external cross-linking, etc.
- To increase the number-average molecular weight of the base polymer such as acrylic polymer etc., an external crosslinking agent can be suitably adopted in the pressure-sensitive adhesive. The external crosslinking method is specifically a reaction method that involves adding and reacting a crosslinking agent such as a polyisocyanate compound, epoxy compound, aziridine compound, melamine crosslinking agent, urea resin, anhydrous compound, or polyamine, to a carboxyl group-containing polymer. When the external crosslinking agent is used, the amount of the crosslinking agent to be used is determined suitably depending on a balance with the base polymer to be crosslinked and applications thereof as the adhesive. Generally, the crosslinking agent is preferably incorporated in an amount of about 5 parts by weight or less based on 100 parts by weight of the base polymer. The lower limit of the crosslinking agent is preferably 0.1 parts by weight or more. The adhesive may be blended not only with the components described above but also with a wide variety of conventionally known additives such as a tackifier, and aging inhibitor, if necessary.
- The thickness of the pressure-sensitive adhesive layer 14 is not particularly limited. However, it is preferably about 1 to 50 μm for preventing a chip cutting surface from being cracked and also fitting and holding the
resin composition layer 16. It is more preferably 2 to 30 μm, and further preferably 5 to 25 μm. - The tensile modulus of the pressure-sensitive adhesive layer 14 at 23° C. is preferably 0.1 to 5.0 MPa, and more preferably 0.1 to 1.0 MPa. Because the tensile modulus of the pressure-sensitive adhesive layer 14 at 23° C. is 0.1 MPa or more, chip flying from the back grinding tape during dicing can be suppressed. Because the tensile modulus of the pressure-sensitive adhesive layer 14 is 5.0 MPa or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively.
- The T-peeling strength between the pressure-sensitive adhesive layer 14 and the
resin composition layer 16 is 0.1 to 5 N/20 mm or more, preferably 0.3 to 5.0 N/20 mm, and more preferably 0.5 to 5.0 N/20 mm, at 23° C. and 300 mm/min. Because the T-peeling strength between the pressure-sensitive adhesive layer 14 and theresin composition layer 16 is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from theback grinding tape 11 during dicing can be suppressed. Because the T-peeling strength is 5 N/20 mm or less, the pressure-sensitive adhesive tape can be peeled from the resin composition layer together with the back grinding tape collectively. - When a semiconductor device is manufactured, the
resin composition layer 16 is arranged on the wafer circuit surface, and has a function as a sealing resin to the circuit surface. Theresin composition layer 16 is used to hold and fix a wafer during wafer grinding. When a chip is loaded on a substrate, theresin composition layer 16 is used to fill the space between the chip and a substrate for loading the chip, and to adhere the chip and the substrate together. - In the step of pasting the
resin composition layer 16 to the circuit surface of the wafer, a resin that is used as theresin composition layer 16 exhibits some degree of fluidity due to heating and the press bonding force to follow the unevenness of the circuit surface, and exerts tackiness by heating in the step of pasting theresin composition layer 16 to the circuit surface of the wafer. Examples of such a resin include a B-stage resin and a pressure-sensitive adhesive. - Examples of the B-stage resin include a semi-cured epoxy resin.
- Examples of the pressure-sensitive adhesive include a mixture of a binder resin having pressure-sensitive tackiness at a normal temperature, and a thermosetting resin. Examples of the binder resin having pressure-sensitive tackiness at a normal temperature include an acrylic resin, a polyester resin, polyvinylether, a urethane resin, and polyamide. Examples of the thermosetting resin include an epoxy resin, a polyimide resin, a phenol resin, a urea resin, a melamine resin, and a resorcinol resin, and preferably an epoxy resin. The thermosetting resin can be used together with an appropriate curing accelerator. Conventionally known materials can be suitably adopted as the binder resin having pressure-sensitive tackiness at a normal temperature, the thermosetting resin, and the curing accelerator.
- The pressure-sensitive adhesive having components described above exhibits moderate fluidity due to heating and press bonding force, and the
resin composition layer 16 can be formed that follows the unevenness of the circuit surface well. It can be used as an adhesive that adheres closely to theback grinding tape 11 to fix the wafer during wafer grinding and that adheres the chip and the substrate for loading the chip. When it is thermally cured, a cured layer with high impact resistance can be finally obtained. In addition, an excellent balance can be achieved between shear strength and peeling strength, and a sufficient adhesive property can be maintained even under a severe heat and humidity condition. - The
resin composition layer 16 preferably has high visible light transmissivity to improve alignment accuracy during dicing. The visible light transmissivity of theresin composition layer 16 is preferably in a range of 70 to 99%. - The thickness (TA) of the
resin composition layer 16 is normally 3 to 150 μm. When bumps are formed on the wafer surface, the ratio (HB/TA) of the average height (HB) of the bumps to the thickness (TA) of theresin composition layer 16 is 1.0/0.8 to 1.0/1.8, and preferably 1.0/1.0 to 1.0/1.5 to suppress the generation of voids and to cover the circuit surface. The average height (HB) of the bumps is the height from the chip surface (the circuit surface excluding the bumps) to the top of the bump, and when there are a plurality of bumps, the height is based on the arithmetical mean thereof. - When the height of the bump is too high relative to the thickness of the
resin composition layer 16, the chip surface (the circuit surface excluding the bumps) and the substrate for loading the chip is spaced apart from one another, thereby causing the generation of voids. When the resin composition layer is too thick, the bump does not penetrate through the resin composition layer, thereby causing poor conductivity. - The
laminated sheet 11 according to the present embodiment can be produced as follows for example. - First, the
base 12 can be formed with a conventionally known film forming method. Examples of the film forming method include a calendar film-forming method, a casting method in an organic solvent, an inflation extruding method in a closed system, a T-die extruding method, a co-extruding method, and a dry laminating method. - Then, a pressure-sensitive adhesive composition solution, which is a material for forming the pressure-sensitive adhesive layer 14, is coated onto the base 12 to form a coating film, and the coating film is dried under a prescribed condition (crosslinked by heating as necessary) to form the pressure-sensitive adhesive layer 14. The coating method is not particularly limited. Examples include roll coating, screen coating, and gravure coating. The drying is performed at a drying temperature of 80 to 150° C. and a drying time of 0.5 to 5 minutes for example. The pressure-sensitive adhesive composition may be coated onto a separator to form a coating film, and then the coating film may be dried in the above-described drying condition to form the pressure-sensitive adhesive layer 14. After that, the pressure-sensitive adhesive layer 14 is pasted on the base 12 together with the separator. With this, the
back grinding tape 11 is produced. - The
resin composition layer 16 can be produced as follows for example. - First, a pressure-sensitive adhesive composition solution, which is a material for forming the
resin composition layer 16, is produced. The binder resin having pressure-sensitive tackiness at a normal temperature, the thermosetting resin, the curing accelerator, and the like are compounded in the pressure-sensitive adhesive composition, as described above. - Then, a pressure-sensitive adhesive composition solution is coated onto a base separator to form a coating film having a prescribed thickness, and the coating film is then dried under a prescribed condition to form the resin composition layer 16 (pressure-sensitive adhesive layer). The coating method is not particularly limited. Examples include roll coating, screen coating, and gravure coating. The drying is performed at a drying temperature of 70 to 160° C. and a drying time of 1 to 5 minutes for example. The pressure-sensitive adhesive composition may be coated onto a separator to form a coating film, and then the coating film may be dried in the above-described drying condition to form the
resin composition layer 16. After that, theresin composition layer 16 is pasted on the base separator together with the separator. - Then, the separator is peeled from each of the
back grinding tape 11 and theresin composition layer 16, and theresin composition layer 16 is pasted to theback grinding tape 11 so as to face the pressure-sensitive adhesive layer 14 of theback grinding tape 11. Examples of a method of pasting theback grinding tape 11 and theresin composition layer 16 include a pressing method and a laminating method. However, the laminating method is preferable when productivity is considered. The laminating temperature is not particularly limited. However, it is preferably 30 to 90° C., and more preferably 60 to 80° C. The line pressure is not particularly limited. However, it is preferably 0.1 to 20 kgf/cm2, and more preferably 1 to 10 kgf/cm2. With this, thelaminated sheet 10 according to the present embodiment can be obtained. - The method of manufacturing a semiconductor device is then described.
FIGS. 2 to 9 are schematic sectional views showing one example of a method of manufacturing a semiconductor device using thelaminated sheet 10. First, theresin composition layer 16 surface of thelaminated sheet 10 is pasted to the circuit surface of asemiconductor wafer 40 to obtain the semiconductor wafer with the laminated sheet (refer toFIG. 2 ). The present step is performed while pressing with a pressing unit such as a press bonding roll. The pasting temperature during mounting is not particularly limited. However, it preferably ranges from 20 to 100° C. - Next, the surface where the
laminated sheet 10 of thesemiconductor wafer 40 with thelaminated sheet 10 is not pasted is ground to make thesemiconductor wafer 40 with thelaminated sheet 10 thin (refer toFIG. 3 ). A normal method can be adopted for the thinning process. Examples of themachine 60 for the thinning process include a grinding machine (back grinding) and a CMP pad. The thinning process is performed until the semiconductor wafer has the desired thickness. - The dicing
tape 20 is then pasted to the ground surface of thethin semiconductor wafer 40 with thelaminated sheet 10 to obtain thesemiconductor wafer 40 in which the dicingtape 20 and thelaminated sheet 10 are pasted together (refer toFIG. 4 ). Examples of a method of pasting the ground surface of thethin semiconductor wafer 40 and the dicingtape 20 include a pressing method and a laminating method. However, the laminating method is preferable when productivity is considered. The laminating temperature is not particularly limited. However, it is preferably 30 to 50° C., and more preferably 35 to 45° C. The line pressure is not particularly limited. However, it is preferably 0.1 to 20 kgf/cm2, and more preferably 1 to 10 kgf/cm2. A conventionally known dicing tape having a base and a pressure-sensitive adhesive layer can be adopted as the dicingtape 20. A general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive and a rubber pressure-sensitive adhesive can be adopted as the pressure-sensitive adhesive layer that configures the dicingtape 20, and an ultraviolet-ray curable-type pressure-sensitive adhesive layer may be adopted. - Then, the
semiconductor wafer 40 in which the dicingtape 20 and thelaminated sheet 10 are pasted together is diced from thelaminated sheet 10 side using a dicing blade 62 (refer toFIG. 5 ). With this, thesemiconductor wafer 40 is cut into individual pieces having a prescribed size to obtainsemiconductor chips 42. In this step, a cutting method called full cutting can be adopted in which the cutting is performed to reach the dicingtape 20. The dicing apparatus used in this step is not particularly limited, and a conventionally known method can be used. Because dicing is performed while theback grinding tape 11 is pasted onto theresin composition layer 16 in the present embodiment, the absorption of water by theresin composition layer 16 during dicing and the attachment of the cut scraps to theresin composition layer 16 can be suppressed. As a result, the decrease in adhering strength of theresin composition layer 16 and the deterioration in electrical reliability can be prevented. In this step, thelaminated sheet 10 is also cut into individual chip pieces together with thesemiconductor wafer 40. - The pressure-
sensitive adhesive tape 30 is then pasted to the laminated sheet 10 (refer toFIG. 6 ). The pressure-sensitive adhesive tape 30 is pasted so as to cover a plurality of thelaminated sheets 10 that are individualized into chip pieces. A conventional known pressure-sensitive adhesive tape can be adopted as the pressure-sensitive adhesive tape 30 as long as the tape has a higher adhering strength between the pressure-sensitive adhesive tape 30 and the base 12 than the adhering strength between the pressure-sensitive adhesive layer 14 and theresin composition layer 16. - Next, the pressure-
sensitive adhesive tape 30 is peeled from theresin composition layer 16 together with the back grinding tape 11 (refer toFIG. 7 ). Because theback grinding tape 11 is individualized by dicing, a plurality of individualizedback grinding tapes 11 are peeled from theresin composition layer 16 together with the pressure-sensitive adhesive tape 30 collectively. - When the pressure-sensitive adhesive layer of the dicing
tape 20 is an ultraviolet-radiation curable type, the dicingtape 20 is irradiated with ultraviolet radiation to decrease adhesive power of the pressure-sensitive adhesive layer. - Then, a pickup (releasing) of the
semiconductor chip 42 is performed to release the semiconductor chip that is obtained by dicing (refer toFIG. 8 ). The method of pickup is not particularly limited, and various conventionally known methods can be adopted. Examples include a method of pushing up anindividual semiconductor chip 42 from the dicingtape 20 side to pick up the pushedsemiconductor chip 42 with a pickup apparatus. - As shown in
FIG. 9 , the picked upsemiconductor chip 42 is adhered and fixed to anadherend 44 via theresin composition layer 16 therebetween with a flip-chip bonding method (a flip-chip mounting method) (flip-chip bonding step). Specifically, thesemiconductor chip 42 is fixed to theadherend 44 with a normal method in a configuration in which the circuit surface of the semiconductor chip 42 (also referred to as a surface, a circuit pattern forming surface, an electrode forming surface, and the like) is facing theadherend 44. For example, a conductive material (not shown) for bonding that is adhered to a connecting pad of theadherend 44 is melted while the bumps (not shown) that are formed on the circuit surface of thesemiconductor chip 42 are contacted and pressed into the conductive material, thereby making it possible to secure the electrical conductivity between thesemiconductor chip 42 and the adherend 44 and to fix thesemiconductor chip 42 to theadherend 44. Theresin composition layer 16 is arranged in the space between thesemiconductor chip 42 and theadherend 44. That is, when thesemiconductor chip 42 is loaded, the space between thesemiconductor chip 42 and theadherend 44 can be filled with theresin composition layer 16, and thesemiconductor chip 42 and theadherend 44 can be adhered to each other with theresin composition layer 16. - Various substrates such as a lead frame and a circuit board (wire circuit board and the like) can be used as the
adherend 44. The material of such substrates is not particularly limited. However, examples include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate. - The material of the bumps and the conductive material are not particularly limited. However, examples include solders (alloy) such as a tin-lead based metal, a tin-silver based metal, a tin-silver-copper based metal, a tin-zinc based metal and a tin-zinc-bismuth based metal, a gold based metal, and a copper based metal.
- Then, the
resin composition layer 16 that is arranged between the flip-chip bondedsemiconductor chip 42 and theadherend 44 is thermally cured. The curing process can be performed at 165° C. to 185° C. for about a few minutes to 1 hour. - The points of the second aspect that differ from those of the first aspect are described below. The second aspect has the same configuration as that of the first aspect except for the items that are described in the present section “<Second Aspect>.”
- An embodiment of the second aspect is described referring to the drawings. However, the second aspect is not limited to these examples.
FIG. 10 is a schematic sectional view showing a laminated sheet according to one embodiment of the second aspect. In the drawings, the parts are omitted that are unnecessary for the description, and some parts are enlarged, shrunken, and the like to aid in the description. - A
laminated sheet 100 has aback grinding tape 110 in which a pressure-sensitive adhesive layer 140 is formed on abase 120, and aresin composition layer 160 that is provided on the pressure-sensitive adhesive layer 140 of theback grinding tape 110. - The
laminated sheet 100, in which the pressure-sensitive adhesive layer 140 is formed from a radiation curable-type pressure-sensitive adhesive, can be used in any of the following methods (1) to (4) of manufacturing a semiconductor device. - 1. A method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
2. A method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, irradiating the laminated sheet side with radiation after dicing, pasting a pressure-sensitive adhesive tape to the laminated sheet after irradiating with radiation, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
3. A method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, pasting a pressure-sensitive adhesive tape to the laminated sheet after dicing, irradiating the laminated sheet side with radiation after pasting of the pressure-sensitive adhesive tape, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape.
4. A method of manufacturing a semiconductor device including the steps of pasting the resin composition layer surface of the laminated sheet to the circuit surface of a semiconductor wafer to obtain a semiconductor wafer with a laminated sheet, grinding the surface, where the laminated sheet of the semiconductor wafer with the laminated sheet is not pasted, to make the semiconductor wafer with the laminated sheet thin, pasting a dicing tape to the ground surface of the thin semiconductor wafer with the laminated sheet to obtain a semiconductor wafer in which the dicing tape and the laminated sheet are pasted together, dicing the semiconductor wafer in which the dicing tape and the laminated sheet are pasted together from the laminated sheet side, irradiating the laminated sheet side with radiation after dicing, pasting a pressure-sensitive adhesive tape to the laminated sheet after irradiating with radiation, irradiating the laminated sheet side with radiation after pasting of the pressure-sensitive adhesive tape, and peeling the pressure-sensitive adhesive tape from the resin composition layer together with the back grinding tape. - A base that is described in the section of “<First Aspect>” such as the base 12 can be used as the
base 120. Therefore, a detailed description of thebase 120 is omitted here. - The pressure-
sensitive adhesive layer 140 contains a radiation curable-type pressure-sensitive adhesive. The adhesive power of the radiation curable-type pressure-sensitive adhesive can be easily decreased when the degree of crosslinking is increased by irradiation with radiation such as an ultraviolet ray. For example, by irradiating with radiation a portion of the pressure-sensitive adhesive layer 140 where the resin composition layer is pasted, a difference in adhesive power from another portion can be provided. - The portion of the pressure-
sensitive adhesive layer 140 that is formed with an uncured radiation curable-type pressure-sensitive adhesive that is not irradiated with radiation adheres to theresin composition layer 160, and holding power can be secured during back grinding and dicing of the semiconductor wafer. In this way, the radiation curable-type pressure-sensitive adhesive can support theresin composition layer 160 for fixing the semiconductor chip to the adherend such as a substrate with a good balance of adhesion and releasing. - The radiation curable-type pressure-sensitive adhesive having an radiation curable type functional group such as a carbon-carbon double bond and exhibiting adherability can be used without special limitation. An example of the radiation curable-type pressure-sensitive adhesive is an addition-type radiation curable-type pressure-sensitive adhesive in which radiation curable type monomer and oligomer components are compounded into a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber pressure-sensitive adhesive. The pressure-sensitive adhesive is preferably an acrylic pressure-sensitive adhesive containing an acrylic polymer as a base polymer for clean washing of electronic components such as a semiconductor wafer and glass, which are easily damaged by contamination, with ultrapure water or an organic solvent such as alcohol.
- Specific examples of the acrylic polymers include an acrylic polymer in which acrylate is used as a main monomer component. Examples of the acrylate include alkyl acrylate (for example, a straight chain or branched chain alkyl ester having 1 to 30 carbon atoms, and particularly 4 to 18 carbon atoms in the alkyl group such as methylester, ethylester, propylester, isopropylester, butylester, isobutylester, sec-butylester, t-butylester, pentylester, isopentylester, hexylester, heptylester, octylester, 2-ethylhexylester, isooctylester, nonylester, decylester, isodecylester, undecylester, dodecylester, tridecylester, tetradecylester, hexadecylester, octadecylester, and eicosylester) and cycloalkyl acrylate (for example, cyclopentylester, cyclohexylester, etc.). These monomers may be used alone or two or more types may be used in combination.
- The acrylic polymer may optionally contain a unit corresponding to a different monomer component copolymerizable with the above-mentioned alkyl ester of (meth)acrylic acid or cycloalkyl ester thereof in order to improve the cohesive force, heat resistance or some other property of the polymer. Examples of such a monomer component include carboxyl-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; acid anhydride monomers such as maleic anhydride, and itaconic anhydride; hydroxyl-containing monomers such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxylmethylcyclohexyl)methyl (meth)acrylate; sulfonic acid group containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamidepropanesulfonic acid, sulfopropyl (meth)acrylate, and (meth)acryloyloxynaphthalenesulfonic acid; phosphoric acid group containing monomers such as 2-hydroxyethylacryloyl phosphate; acrylamide; and acrylonitrile. These copolymerizable monomer components may be used alone or in combination of two or more thereof. The amount of the copolymerizable monomer(s) to be used is preferably 40% or less by weight of all the monomer components.
- For crosslinking, the acrylic polymer can also contain multifunctional monomers if necessary as the copolymerizable monomer component. Such multifunctional monomers include hexane diol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylol propane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate etc. These multifunctional monomers can also be used as a mixture of one or more thereof. From the viewpoint of adhesiveness etc., the use amount of the multifunctional monomer is preferably 30 wt % or less based on the whole monomer components.
- Preparation of the above acrylic polymer can be performed by applying an appropriate manner such as solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization to a mixture of one or two or more kinds of component monomers for example. Since the adhesive layer preferably has a composition in which the content of low molecular weight materials is suppressed for prevention of wafer contamination, and since those in which an acrylic polymer having a weight average molecular weight of 300000 g/mol or more, particularly 400000 to 3000000 g/mol as a main component are preferable for such purpose, the adhesive can be made to be an appropriate cross-linked type adhesive, such as an adhesive with internal cross-linking, an adhesive with external cross-linking, etc.
- To increase the number-average molecular weight of the base polymer such as acrylic polymer etc., an external crosslinking agent can be suitably adopted in the adhesive. The external crosslinking method is specifically a reaction method that involves adding and reacting a crosslinking agent such as a polyisocyanate compound, epoxy compound, aziridine compound, melamine crosslinking agent, urea resin, anhydrous compound, or polyamine, to a carboxyl group-containing polymer. When the external crosslinking agent is used, the amount of the crosslinking agent to be used is determined suitably depending on a balance with the base polymer to be crosslinked and applications thereof as the adhesive. Generally, the crosslinking agent is preferably incorporated in an amount of about 5 parts by weight or less based on 100 parts by weight of the base polymer. The lower limit of the crosslinking agent is preferably 0.1 parts by weight or more. The adhesive may be blended not only with the components described above but also with a wide variety of conventionally known additives such as a tackifier, and an aging inhibitor, if necessary.
- Examples of the radiation curable type monomer component to be compounded include components such as an urethane oligomer, urethane(meth)acrylate, trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butane dioldi(meth)acrylate. Further, the radiation curable type oligomer component includes various types of oligomers such as an urethane based, a polyether based, a polyester based, a polycarbonate based, and a polybutadiene based oligomer, and its molecular weight is appropriately in a range of about 100 to 30,000 g/mol. The compounding amount of the radiation curable type monomer component and the oligomer component can be appropriately determined to an amount in which the adhesive strength of the adhesive layer can be decreased depending on the type of the adhesive layer. Generally, it is for example 5 to 500 parts by weight, and preferably about 40 to 150 parts by weight based on 100 parts by weight of the base polymer such as an acrylic polymer constituting the adhesive.
- Further, besides the addition-type radiation curable-type pressure-sensitive adhesive described above, the radiation curable-type pressure-sensitive adhesive includes an intrinsic-type radiation curable-type pressure-sensitive adhesive using an acrylic polymer having a radical reactive carbon-carbon double bond in the polymer side chain, in the main chain, or at the end of the main chain as the base polymer. The intrinsic-type radiation curable-type pressure-sensitive adhesives are preferable because they do not have to contain the oligomer component, etc. that is a low molecular weight component, or most of them do not contain the oligomer component, and they can form an adhesive layer having a stable layer structure without the oligomer component, etc. migrating in the adhesive over time.
- The above-mentioned base polymer, which has a carbon-carbon double bond, may be any polymer that has a carbon-carbon double bond and further is viscous. As such a base polymer, a polymer having an acrylic polymer as a basic skeleton is preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.
- The method for introducing a carbon-carbon double bond into anyone of the above-mentioned acrylic polymers is not particularly limited, and may be selected from various methods. The introduction of the carbon-carbon double bond into a side chain of the polymer is easier in molecule design. The method is, for example, a method of copolymerizing a monomer having a functional group with an acrylic polymer, and then causing the resultant to condensation-react or addition-react with a compound having a functional group reactive with the above-mentioned functional group and a carbon-carbon double bond while keeping the ultraviolet ray curability of the carbon-carbon double bond.
- Examples of the combination of these functional groups include a carboxylic acid group and an epoxy group; a carboxylic acid group and an aziridine group; and a hydroxyl group and an isocyanate group. Of these combinations, the combination of a hydroxyl group and an isocyanate group is preferable for ease of reaction tracing. If the above-mentioned acrylic polymer, which has a carbon-carbon double bond, can be produced by the combination of these functional groups, each of the functional groups may be present on any one of the acrylic polymer and the above-mentioned compound. It is preferable for the above-mentioned preferable combination that the acrylic polymer has the hydroxyl group and the above-mentioned compound has the isocyanate group. Examples of the isocyanate compound in this case, which has a carbon-carbon double bond, include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m-isopropenyl-α,α-dimethylbenzyl isocyanate. The used acrylic polymer may be an acrylic polymer copolymerized with any one of the hydroxyl-containing monomers exemplified above, or an ether compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether.
- The intrinsic type radiation curable-type pressure-sensitive adhesive may be made only of the above-mentioned base polymer (in particular, the acrylic polymer), which has a carbon-carbon double bond. However, the above-mentioned radiation curable type monomer component or oligomer component may be incorporated into the base polymer to such an extent that properties of the adhesive are not deteriorated. The amount of the radiation curable type oligomer component or the like is usually 30 parts or less by weight, preferably from 0 to 10 parts by weight for 100 parts by weight of the base polymer.
- In the case that the radiation curable-type pressure-sensitive adhesive is cured with ultraviolet rays or the like, a photopolymerization initiator is incorporated into the adhesive. Examples of the photopolymerization initiator include α-ketol compounds such as 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α′-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexyl phenyl ketone; acetophenone compounds such as methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether; ketal compounds such as benzyl dimethyl ketal; aromatic sulfonyl chloride compounds such as 2-naphthalenesulfonyl chloride; optically active oxime compounds such as 1-phenone-1,1-propanedione-2-(o-ethoxycarbonyl)oxime; benzophenone compounds such as benzophenone, benzoylbenzoic acid, and 3,3′-dimethyl-4-methoxybenzophenone; thioxanthone compound such as thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketones; acylphosphonoxides; and acylphosphonates. The amount of the photopolymerization initiator to be blended is, for example, from about 0.05 to 20 parts by weight for 100 parts by weight of the acrylic polymer or the like which constitutes the adhesive as a base polymer.
- Examples of the radiation curable-type pressure-sensitive include a rubber adhesive and an acrylic adhesive, that are disclosed in Japanese Patent Application Laid-Open No. 60-196956, containing an addition-polymerizable compound having two or more unsaturated bonds, a photopolymerizable compound such as alkoxysilane having an epoxy group, and a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, or an onium salt compound.
- The thickness of the pressure-
sensitive adhesive layer 140 is not particularly limited. However, it is preferably about 1 to 50 μm for preventing a chip cutting surface from being cracked and also fitting and holding theresin composition layer 160. It is more preferably 2 to 30 μm, and further preferably 5 to 25 μm. - The tensile modulus of the pressure-
sensitive adhesive layer 140 before radiation curing at 23° C. is preferably 0.1 to 5.0 MPa, and more preferably 0.1 to 1.0 MPa. When the tensile modulus of the pressure-sensitive adhesive layer 140 before radiation curing at 23° C. is 0.1 to 5.0 MPa, chip flying from theback grinding tape 110 during dicing can be suppressed. - When the pressure-
sensitive adhesive layer 140 is used in the method (1) of manufacturing a semiconductor device, the T-peeling strength between the pressure-sensitive adhesive layer 140 and theresin composition layer 160 before radiation curing is 0.1 to 5 N/20 mm or more, preferably 0.3 to 5.0 N/20 mm, and more preferably 0.5 to 5.0 N/20 mm, at 23° C. and 300 mm/min. Because the T-peeling strength between the pressure-sensitive adhesive layer 140 and theresin composition layer 160 before radiation curing is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from theback grinding tape 110 during dicing can be suppressed. - When the pressure-
sensitive adhesive layer 140 is used in any of the methods (2) to (4) of manufacturing a semiconductor device, the T-peeling strength between the pressure-sensitive adhesive layer 140 and theresin composition layer 160 before radiation curing is 0.1 to 20 N/20 mm or more, preferably 0.3 to 5.0 N/20 mm, and more preferably 0.5 to 5.0 N/20 mm, at 23° C. and 300 mm/min. Because the T-peeling strength between the pressure-sensitive adhesive layer 140 and theresin composition layer 160 before radiation curing is 0.1 N/20 mm or more at 23° C. and 300 mm/min, chip flying from theback grinding tape 110 during dicing can be suppressed. - When the pressure-
sensitive adhesive layer 140 is used in any of the methods (2) to (4) of manufacturing a semiconductor device, the T-peeling strength between the pressure-sensitive adhesive layer 140 and theresin composition layer 160 after radiation curing is 0.01 to 5 N/20 mm or more, preferably 0.01 to 1.0 N/20 mm, and more preferably 0.01 to 0.5N/20 mm, at 23° C. and 300 mm/min. Because the T-peeling strength after radiation curing is 5 N/20 mm or less, the pressure-sensitive adhesive tape 30 can be peeled from theresin composition layer 160 together with theback grinding tape 110 collectively. - A resin composition layer that is described in the section of “<First Aspect>” such as the
resin composition layer 16 can be used as theresin composition layer 160. Therefore, a detailed description of theresin composition layer 160 is omitted here. - A method of manufacturing laminated sheet that is described in the section of “<First Aspect>” can be used as the method of manufacturing
laminated sheet 100. Therefore, a detailed description of the method of manufacturinglaminated sheet 100 is omitted here. - A method of manufacturing a semiconductor device is described.
FIGS. 11 to 20 are schematic sectional views showing one example of a method of manufacturing a semiconductor device using thelaminated sheet 100. First, theresin composition layer 160 surface of thelaminated sheet 100 is pasted to the circuit surface of thesemiconductor wafer 400 to obtain a semiconductor wafer with a laminated sheet (refer toFIG. 11 ). The present step is performed while pressing with a pressing unit such as a press bonding roll. The pasting temperature during mounting is not particularly limited. However, it preferably ranges from 20 to 100° C. - Then, the surface where the
laminated sheet 100 of thesemiconductor wafer 400 with thelaminated sheet 100 is not pasted is ground to make thesemiconductor wafer 400 with thelaminated sheet 100 thin (refer toFIG. 12 ). A normal method can be adopted for the thinning process. Examples of themachine 600 for the thinning process include a grinding machine (back grinding) and a CMP pad. The thinning process is preformed until the semiconductor wafer has the desired thickness. - The dicing
tape 200 is then pasted to the ground surface of thethin semiconductor wafer 400 with thelaminated sheet 100 to obtain thesemiconductor wafer 400 in which thedicing tape 200 and thelaminated sheet 100 are pasted together (refer toFIG. 13 ). Examples of a method of pasting the ground surface of thethin semiconductor wafer 400 and the dicingtape 200 include a pressing method and a laminating method. However, the laminating method is preferable when productivity is considered. The laminating temperature is not particularly limited. However, it is preferably 30 to 50° C., and more preferably 35 to 45° C. The line pressure is not particularly limited. However, it is preferably 0.1 to 20 kgf/cm2, and more preferably 1 to 10 kgf/cm2. A conventionally known dicing tape having a base and a pressure-sensitive adhesive layer can be adopted as the dicingtape 200. A general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive and a rubber pressure-sensitive adhesive can be adopted as the pressure-sensitive adhesive layer that configures the dicingtape 200, and an ultraviolet-ray curable-type pressure-sensitive adhesive layer may be adopted. - Then, the
semiconductor wafer 400 in which thedicing tape 200 and thelaminated sheet 100 are pasted together is diced from thelaminated sheet 100 side using a dicing blade 620 (refer toFIG. 14 ). With this, thesemiconductor wafer 400 is cut into individual pieces having a prescribed size to obtainsemiconductor chips 420. In this step, a cutting method called full cutting can be adopted in which the cutting is performed to reach the dicingtape 200. The dicing apparatus used in this step is not particularly limited, and a conventionally known method can be used. Because dicing is performed while theback grinding tape 110 is pasted onto theresin composition layer 160 in the present embodiment, the absorption of water by theresin composition layer 160 during dicing and the attachment of the cut scraps to theresin composition layer 160 can be suppressed. As a result, the decrease in adhering strength of theresin composition layer 160 and the deterioration in electrical reliability can be prevented. In this step, thelaminated sheet 100 is also cut into individual chip pieces together with thesemiconductor wafer 400. - The
laminated sheet 100 side is irradiated with radiation as necessary (when the method (2) or (4) of manufacturing a semiconductor device is adopted) (refer toFIG. 15 ). With this, the pressure-sensitive adhesive layer 14 is cured and the adhesive power decreases. With respect to the irradiation amount of the radiation, for example, the irradiance of an ultraviolet ray at a wavelength of 10 to 400 nm is within a range from 10 to 1000 mW/cm2 (preferably 20 to 200 mW/cm2) and the accumulative radiant exposure of the ultraviolet ray is within a range from 10 to 50 mJ/cm2 (preferably 30 to 50 mJ/cm2). Specifically, for example, with respect to the irradiation with light by a high pressure mercury lamp, the irradiation conditions may be adopted such that the irradiance is within a range from 10 to 1000 mW/cm2 (preferably 20 to 200 mW/cm2) and the accumulative radiant exposure of the ultraviolet ray is within a range from 10 to 50 mJ/cm2 (preferably 30 to 50 mJ/cm2). - The pressure-sensitive
adhesive tape 300 is then pasted to the laminated sheet 100 (refer toFIG. 16 ). The pressure-sensitiveadhesive tape 300 is pasted so as to cover a plurality of thelaminated sheets 100 that are individualized into chip pieces. A conventional known pressure-sensitive adhesive tape can be adopted as the pressure-sensitiveadhesive tape 300 as long as the tape has a higher adhering strength between the pressure-sensitiveadhesive tape 300 and the base 120 than the adhering strength between the pressure-sensitive adhesive layer 140 and theresin composition layer 160. - The
laminated sheet 100 side is irradiated with an ultraviolet ray as necessary (when the method (3) or (4) of manufacturing a semiconductor device is adopted) (refer toFIG. 17 ). With this, the pressure-sensitive adhesive layer 14 is cured and the adhesive power decreases. With respect to the irradiation amount of the radiation, for example, the irradiance of an ultraviolet ray at a wavelength of 10 to 400 nm is within a range from 10 to 1000 mW/cm2 (preferably 20 to 200 mW/cm2) and the accumulative radiant exposure of the ultraviolet ray is within a range from 100 to 1000 mJ/cm2 (preferably 400 to 1000 mJ/cm2). Specifically, for example, with respect to the irradiation with light by a high pressure mercury lamp, the irradiation conditions may be adopted that the irradiance is within a range from 10 to 1000 mW/cm2 (preferably 20 to 200 mW/cm2) and the accumulative radiant exposure of the ultraviolet ray is within a range from 100 to 1000 mJ/cm2 (preferably 400 to 1000 mJ/cm2). - Next, the pressure-sensitive
adhesive tape 300 is peeled from theresin composition layer 160 together with the back grinding tape 110 (refer toFIG. 18 ). Because theback grinding tape 110 is individualized by dicing, a plurality of individualizedback grinding tapes 110 are peeled from theresin composition layer 160 together with the pressure-sensitiveadhesive tape 300 collectively. - When the pressure-sensitive adhesive layer of the dicing
tape 200 is an ultraviolet-ray curable type, the dicingtape 200 is irradiated with an ultraviolet ray to decrease adhesive power of the pressure-sensitive adhesive layer. - Then, a pickup (releasing) of the
semiconductor chip 420 is performed to release the semiconductor chip that is obtained by dicing (refer toFIG. 19 ). The method of pickup is not particularly limited, and various conventionally known methods can be adopted. Examples include a method of pushing up anindividual semiconductor chip 420 from the dicingtape 200 side to pick up the pushedsemiconductor chip 420 with a pickup apparatus. - As shown in
FIG. 20 , the picked upsemiconductor chip 420 is adhered and fixed to anadherend 440 via theresin composition layer 160 therebetween with a flip-chip bonding method (a flip-chip mounting method) (flip-chip bonding step). Specifically, thesemiconductor chip 420 is fixed to theadherend 440 with a normal method in a configuration in which the circuit surface of the semiconductor chip 420 (also referred to as a surface, a circuit pattern forming surface, an electrode forming surface, and the like) is facing theadherend 440. For example, a conductive material (not shown) for bonding that is adhered to a connecting pad of theadherend 440 is melted while the bumps (not shown) that are formed on the circuit surface of thesemiconductor chip 420 are contacted and pressed into the conductive material, thereby making it possible to secure the electrical conductivity between thesemiconductor chip 420 and theadherend 440 and to fix thesemiconductor chip 420 to theadherend 440. Theresin composition layer 160 is arranged in the space between thesemiconductor chip 420 and theadherend 440. That is, when thesemiconductor chip 420 is loaded, the space between thesemiconductor chip 420 and theadherend 440 can be filled with theresin composition layer 160, and thesemiconductor chip 420 and theadherend 440 can be adhered to each other with theresin composition layer 160. - Various substrates such as a lead frame and a circuit board (wire circuit board and the like) can be used as the
adherend 440. The material of such substrates is not particularly limited. However, examples include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate. - The material of the bumps and the conductive material are not particularly limited. However, examples include solders (alloy) such as a tin-lead based metal, a tin-silver based metal, a tin-silver-copper based metal, a tin-zinc based metal and a tin-zinc-bismuth based metal, a gold based metal, and a copper based metal.
- Then, the
resin composition layer 160 that is arranged between the flip-chip bondedsemiconductor chip 420 and theadherend 440 is thermally cured. The curing process can be performed at 165° C. to 185° C. for about a few minutes to 1 hour. - In the method (2) of manufacturing a semiconductor device, the irradiation with an ultraviolet ray is performed after dicing, and the irradiation with an ultraviolet ray is not performed after pasting of the pressure-sensitive
adhesive tape 300. The method (2) of manufacturing a semiconductor device is preferable in the respect that peeling power can be decreased when the pressure-sensitive adhesive tape is peeled from the resin composition layer together with the back grinding tape collectively and the peeling can be made easy. - In the method (3) of manufacturing a semiconductor device, the irradiation with an ultraviolet ray is not performed after dicing, and the irradiation with an ultraviolet ray is performed after pasting of the pressure-sensitive
adhesive tape 300. The method (3) of manufacturing a semiconductor device is preferable in the respects that the adhesion power between the pressure-sensitive adhesive tape and the back grinding tape can be improved and that peeling power can be decreased when the pressure-sensitive adhesive tape is peeled from the resin composition layer together with the back grinding tape collectively and the peeling can be made easy. - In the method (4) of manufacturing a semiconductor device, the irradiation with an ultraviolet ray is performed after dicing, and the irradiation with an ultraviolet ray is performed also after pasting of the pressure-sensitive
adhesive tape 300. The method (4) of manufacturing a semiconductor device is preferable in the respects that the adhesion power between the pressure-sensitive adhesive tape and the back grinding tape can be improved and that peeling power can be decreased when the pressure-sensitive adhesive tape is peeled from the resin composition layer together with the back grinding tape collectively and the peeling can be made easy. - A case in which the radiation is an ultraviolet ray is described in the above-described embodiment. However, the present invention is not limited to this example, and the radiation may be an x-ray, an electron beam, or the like. In this case, a pressure-sensitive adhesive corresponding to the radiation that is used such as an x-ray curable-type pressure-sensitive adhesive and an electron beam curable-type pressure-sensitive adhesive can be used.
- Below, preferred examples of the present invention are explained in detail. However, materials, addition amounts, and the like described in these examples are not intended to limit the scope of the present invention, and are only examples for explanation and there is no description of limitations in particular. Further, “part” means “parts by weight.”
- The following respective examples correspond to the first aspect.
- The following epoxy resin, phenol resin, acrylic resin, and curing accelerator were prepared.
- Epoxy resin A: Naphthalene type epoxy resin having an epoxy group equivalent of 142 g/eq (product name: HP4032D manufactured by DIC Corporation)
- Epoxy resin B: Triphenol methane type epoxy resin having an epoxy group equivalent of 169 g/eq (product name: EPPN501HY manufactured by Nippon Kayaku Co., Ltd.)
- Phenol novolak resin: Aralkyl type phenol resin having an epoxy group equivalent of 175 g/eq (product name: MEH-7800M/MEH-7800SS manufactured by Meiwa Plastic Industries, Ltd.)
- Acrylic resin: Copolymer of ethylacrylate, butylacrylate, and acrylonitrile having a weight average molecular weight of 450,000 g/mol (product name: TEISAN RESIN SG-P3 manufactured by Nagase ChemteX Corporation)
- Curing Accelerator: Triphenylphosphine (product name: TPP-K manufactured by Hokko Chemical Co., Ltd.)
- Sixty parts of the epoxy resin A, 15 parts of the epoxy resin B, 90 parts of the phenol novolak resin, 115 parts of the acrylic resin, and 2 parts of the curing accelerator were mixed to obtained a resin composition. The resin composition was then coated to the surface of a release film (MRA manufactured by Mitsubishi Chemical Corporation, thickness 50 μm), that was subjected to a release treatment, so that the thickness after drying was 100 μm, and the resultant was dried at 110° C. for 5 minutes to obtain a resin composition layer.
- One hundred parts of 2-ethylhexylacrylate and 20 parts of 2-hydroxyethylacrylate were charged in a reactor equipped with a cooling tube, a nitrogen gas introducing tube, a thermometer, and a stirrer. A polymerization process was performed in a toluene solution in a nitrogen gas flow at 60° C. for 8 hours to obtain an acrylic polymer A.
- Fifteen parts of a polyisocyanate crosslinking agent (trade name “Coronate X”, manufactured by Nippon Polyurethane Industry Co., Ltd.) was added to 100 parts of the acrylic polymer A to obtain a pressure-sensitive adhesive composition solution A.
- The pressure-sensitive adhesive composition solution A was coated on a PET film having a thickness of 50 μm, and dried by heating to form a pressure-sensitive adhesive layer A having a thickness of 30 μm. A tape in which the pressure-sensitive adhesive layer A was formed on the PET film was defined as a back grinding tape A.
- One hundred parts of butylacrylate, 80 parts of ethylacrylate, and 40 parts of 2-hydroxyethylacrylate were charged in a reactor equipped with a cooling tube, a nitrogen gas introducing tube, a thermometer, and a stirrer. A polymerization process was performed in a toluene solution in a nitrogen gas flow at 60° C. for 8 hours to obtain an acrylic polymer B.
- Forty five parts of 2-methacryloyloxyethylisocyanate was added to the acrylic polymer B, and subjected to an addition polymerization reaction process in an air flow at 50° C. for 12 hours to obtain an acrylic polymer B′.
- 0.2 parts of a polyisocyanate crosslinking agent (trade name “Coronate L”, manufactured by Nippon Polyurethane Industry Co., Ltd.) was added to 100 parts of the acrylic polymer B′ to obtain a pressure-sensitive adhesive composition solution B.
- The pressure-sensitive adhesive composition solution B was coated on a PET film having a thickness of 50 μm, and dried by heating to form a pressure-sensitive adhesive layer B having a thickness of 30 μm. A tape in which the pressure-sensitive adhesive layer B was formed on the PET film was defined as a back grinding tape B.
- One hundred parts of 2-ethylhexylacrylate and 20 parts of 2-hydroxyethylacrylate were charged in a reactor equipped with a cooling tube, a nitrogen gas introducing tube, a thermometer, and a stirrer. A polymerization process was performed in a toluene solution in a nitrogen gas flow at 60° C. for 8 hours to obtain an acrylic polymer C.
- 30 parts of a polyisocyanate crosslinking agent (trade name “Coronate X”, manufactured by Nippon Polyurethane Industry Co., Ltd.) was added to 100 parts of the acrylic polymer C to obtain a pressure-sensitive adhesive composition solution C.
- The pressure-sensitive adhesive composition solution C was coated on a PET film having a thickness of 50 μm, and dried by heating to form a pressure-sensitive adhesive layer C having a thickness of 30 μm. Thereafter, the pressure-sensitive adhesive layer C was irradiated with an ultraviolet ray of 400 mJ/cm2 to obtain a back grinding tape C.
- The tensile modulus of each of the pressure-sensitive adhesive layers A to C was measured. The tensile modulus was obtained from a value calculated from a tangent of a load-elongation curve measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The measurement conditions were as follows: a distance between chucks was 10 mm and a tensile speed was 50 mm/min. The result is shown in Table 1.
- (Measurement of T-Peeling Strength between Pressure-Sensitive Adhesive Layer and Resin Composition Layer)
- The pressure-sensitive adhesive surface of the back grinding tape A and the resin composition layer were pasted together under conditions of a pasting speed of 0.6 m/min, a roller temperature of 25° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc. to produce a laminated sheet A. The laminated sheet A was defined as a laminated sheet according to Example 1. The resin composition layer was pasted to each of the back grinding tapes B and C in the same manner to produce laminated sheets B and C. The laminated sheet B was defined as a laminated sheet according to Comparative Example 1. The laminated sheet C was defined as a laminated sheet according to Comparative Example 2.
- The T-peeling strength between the pressure-sensitive adhesive layer of each of the laminated sheets A to C and the resin composition layer was measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The peeling speed was 300 mm/min. The result is shown in Table 1.
- (Evaluation of Chip Flying from Back Grinding Tape During Dicing)
- The laminated sheets A to C were produced in the same manner as described above. The resin composition layer surface of the laminated sheet and the mirror surface of a wafer were pasted together under conditions of a pasting speed of 0.6 m/min, a roller temperature of 70° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc. A one-side mirror-finished 8 inch wafer manufactured by Synergy-Tech Co., Ltd. was used.
- Then, the pasted laminated sheet was cut into a wafer shape, and the surface of the wafer with the laminated sheet was ground to a thickness of 200 μm using a back grinding machine manufactured by DISCO Corporation.
- Then, the ground surface of the wafer with the laminated sheet and the pressure-sensitive adhesive surface of a dicing tape (DU-300 manufactured by Nitto Denko Corporation) were pasted together under conditions of a pasting speed of 0.6 m/min, a roller temperature of 25° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc.
- Then, dicing was performed from the back grinding tape side first into the pressure-sensitive adhesive layer of the back grinding tape and then into the base film of the dicing tape at a spindle rotation of 40,000 rpm and a cutting speed of 30 mm/sec using a dicer manufactured by DISCO Corporation. The cases in which there was no chip flying from the back grinding tape during dicing were marked “O”, and the cases in which there was chip flying were marked “x”. The results are shown in Table 1.
- (Evaluation of Peeling Property of Back Grinding Tape after Dicing)
- After dicing, a pressure-sensitive adhesive tape (BT-315 manufactured by Nitto Denko Corporation) was pasted to the back grinding tape surface of the wafer with the dicing tape under conditions of a pasting speed of 0.6 m/min, a roller temperature of 25° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co. , Inc. Then, the pressure-sensitive adhesive tape was pulled using a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation) with a T-peeling method at a peeling speed of 300 mm/min. The cases in which the back grinding tape was peeled from the resin composition layer with a condition that it was pasted to the pressure-sensitive adhesive tape were marked “O”, and the cases in which the back grinding tape was not peeled from the resin composition layer with a condition that it was pasted to the pressure-sensitive adhesive tape were marked “x”. However, the laminated sheet C was not evaluated because chip flying from the back grinding tape occurred during dicing. The result is shown in Table 1.
-
TABLE 1 Comparative Comparative Example 1 Example 1 Example 2 Tensile Modulus [MPa] 4.3 0.15 6.7 T-Peeling Strength [N/20 mm] 0.21 8.0 or more 0.085 Evaluation of Chip Flying from ∘ ∘ x Back Grinding Tape During Dicing Evaluation of Peeling ∘ x — Property of Back Grinding Tape - The following respective examples correspond to the second aspect.
- The following epoxy resin, phenol resin, acrylic resin, and curing accelerator were prepared.
- Epoxy resin A: Naphthalene type epoxy resin having an epoxy group equivalent of 142 g/eq (product name: HP4032D manufactured by DIC Corporation)
- Epoxy resin B: Triphenol methane type epoxy resin having an epoxy group equivalent of 169 g/eq (product name: EPPN501HY manufactured by Nippon Kayaku Co., Ltd.)
- Phenol novolak resin: Aralkyl type phenol resin having an epoxy group equivalent of 175 g/eq (product name: MEH-7800M/MEH-7800SS manufactured by Meiwa Plastic Industries, Ltd.)
- Acrylic resin: Copolymer of ethylacrylate, butylacrylate, and acrylonitrile having a weight average molecular weight of 450,000 g/mol (product name: TEISAN RESIN SG-P3 manufactured by Nagase ChemteX Corporation)
- Curing Accelerator: Triphenylphosphine (product name: TPP-K manufactured by Hokko Chemical Co., Ltd.)
- Sixty parts of the epoxy resin A, 15 parts of the epoxy resin B, 90 parts of the phenol novolak resin, 115 parts of the acrylic resin, and 2 parts of the curing accelerator were mixed to obtained a resin composition. The resin composition was then coated to the surface of a release film (MRA manufactured by Mitsubishi Chemical Corporation, thickness 50 μm), that was subjected to a release treatment, so that the thickness after drying was 100 μm, and the resultant was dried at 110° C. for 5 minutes to obtain a resin composition layer.
- One hundred parts of 2-ethylhexylacrylate and 20 parts of 2-hydroxyethylacrylate were charged in a reactor equipped with a cooling tube, a nitrogen gas introducing tube, a thermometer, and a stirrer. A polymerization process was performed in a toluene solution in a nitrogen gas flow at 60° C. for 8 hours to obtain an acrylic polymer A.
- Fifteen parts of 2-methacryloyloxyethylisocyanate was added to the acrylic polymer A, and subjected to an addition polymerization reaction process in an air flow at 50° C. for 12 hours to obtain an acrylic polymer A′.
- Then, 2 parts of a polyisocyanate crosslinking agent (product name “Coronate L”, manufactured by Nippon Polyurethane Industry Co., Ltd.) and 2 parts of an acetophenone photopolymerization initiator (product name “Irgacure 651”, manufactured by Chiba Specialty Chemicals Corporation) were added to 100 parts of the acrylic polymer A′ to obtain a pressure-sensitive adhesive composition solution A.
- The pressure-sensitive adhesive composition solution A was coated on a PET film having a thickness of 50 μm, and dried by heating to form a pressure-sensitive adhesive layer A having a thickness of 30 μm. A tape in which the pressure-sensitive adhesive layer A was formed on the PET film was defined as a back grinding tape A.
- The same back grinding tape as the back grinding tape A of Example 1 was defined as a back grinding tape B according to Example 2. The pressure-sensitive adhesive layer that configures the back grinding tape B was defined as a pressure-sensitive adhesive layer B. The back grinding tape B according to Example 2 was irradiated with an ultraviolet ray of 50 mJ/cm2 after dicing and before pasting of the pressure-sensitive adhesive tape as described later, and used.
- The same back grinding tape as the back grinding tape A of Example 1 was defined as a back grinding tape C according to Example 3. The pressure-sensitive adhesive layer that configures the back grinding tape C was defined as a pressure-sensitive adhesive layer C. The back grinding tape C according to Example 3 was irradiated with an ultraviolet ray of 400 mJ/cm2 after pasting of the pressure-sensitive adhesive tape as described later, and used.
- The same back grinding tape as the back grinding tape A of Example 1 was defined as a back grinding tape D according to Example 4. The pressure-sensitive adhesive layer that configures the back grinding tape D was defined as a pressure-sensitive adhesive layer D. The back grinding tape D according to Example 4 was irradiated with an ultraviolet ray of 50 mJ/cm2 after dicing and before pasting of the pressure-sensitive adhesive tape, further irradiated with an ultraviolet ray of 400 mJ/cm2 after pasting of the pressure-sensitive adhesive tape, and used.
- One hundred parts of butylacrylate, 80 parts of ethylacrylate, and 40 parts of 2-hydroxyethylacrylate were charged in a reactor equipped with a cooling tube, a nitrogen gas introducing tube, a thermometer, and a stirrer. A polymerization process was performed in a toluene solution in a nitrogen gas flow at 60° C. for 8 hours to obtain an acrylic polymer E.
- Forty five parts of 2-methacryloyloxyethylisocyanate was added to the acrylic polymer E, and subjected to an addition polymerization reaction process in an air flow at 50° C. for 12 hours to obtain an acrylic polymer E′.
- Then, 0.2 parts of a polyisocyanate crosslinking agent (Coronate L manufactured by Nippon Polyurethane Industry Co., Ltd.) and 3 parts of an acetophenone photopolymerization initiator (product name “Irgacure 651”, manufactured by Chiba Specialty Chemicals Corporation) were added to 100 parts of the acrylic polymer E′ to obtain a pressure-sensitive adhesive composition solution E.
- The pressure-sensitive adhesive composition solution E was coated on a PET film having a thickness of 50 μm, and dried by heating to form a pressure-sensitive adhesive layer E having a thickness of 30 μm. A tape in which the pressure-sensitive adhesive layer E was formed on the PET film was defined as a back grinding tape E.
- The base film surface (PET film surface) side of the back grinding tape A of Example 1 was irradiated with an ultraviolet ray of 400 mJ/cm2 using an UV irradiation apparatus (Nitto Seiki Co., Ltd.). This was defined as a back grinding tape F. The pressure-sensitive adhesive layer that configures the back grinding tape F was defined as a pressure-sensitive adhesive layer F.
- The same back grinding tape as the back grinding tape A of Example 1 was defined as a back grinding tape G according to Comparative Example 3. The pressure-sensitive adhesive layer that configures the back grinding tape G was defined as a pressure-sensitive adhesive layer G. The back grinding tape G according to Comparative Example 3 was irradiated with an ultraviolet ray of 400 mJ/cm2 after dicing and before pasting of the pressure-sensitive adhesive tape as described later, and used.
- The tensile modulus of each of the pressure-sensitive adhesive layers A to G was measured. The tensile modulus was obtained from a value calculated from a tangent of a load-elongation curve measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The measurement conditions were as follows: a distance between chucks was 10 mm and a tensile speed was 50 mm/min. The result is shown in Table 2.
- (Measurement of T-Peeling Strength between Pressure-Sensitive Adhesive Layer and Resin Composition Layer)
- The pressure-sensitive adhesive surface of the back grinding tape A and the resin composition layer were pasted together under conditions of a pasting speed of 0.6 m/min, a roller temperature of 25° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc. to produce a laminated sheet A. The laminated sheet A was defined as a laminated sheet according to Example 1. The resin composition layer was pasted to each of the back grinding tapes B to G in the same manner to produce laminated sheets B to G. The laminated sheet B was defined as a laminated sheet according to Example 2. The laminated sheet C was defined as a laminated sheet according to Example 3. The laminated sheet D was defined as a laminated sheet according to Example 4. The laminated sheet E was defined as a laminated sheet according to Comparative Example 1. The laminated sheet F was defined as a laminated sheet according to Comparative Example 2. The laminated sheet G was defined as a laminated sheet according to Comparative Example 3.
- The T-peeling strength between the pressure-sensitive adhesive layer of each of the laminated sheets A to G and the resin composition layer was measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The peeling speed was 300 mm/min. The result is shown in Table 2.
- (Evaluation of Chip Flying from Back Grinding Tape During Dicing)
- The laminated sheets A to G were produced in the same manner as described above. The resin composition layer surface of the laminated sheet and the mirror surface of a wafer were pasted together under conditions of a pasting speed of 0.6 m/min, a roller temperature of 70° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc. A one-side mirror-finished 8 inch wafer manufactured by Synergy-Tech Co., Ltd. was used.
- Then, the pasted laminated sheet was cut into a wafer shape, and the surface of the wafer with the laminated sheet was ground to a thickness of 200 μm using a back grinding machine manufactured by DISCO Corporation.
- Then, the ground surface of the wafer with the laminated sheet and the pressure-sensitive adhesive surface of a dicing tape (DU-300 manufactured by Nitto Denko Corporation) were pasted together under conditions of a pasting speed of 0.6 m/min, a roller temperature of 25° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc.
- Then, dicing was performed from the back grinding tape side first into the pressure-sensitive adhesive layer of the back grinding tape and then into the base film of the dicing tape at a spindle rotation of 40,000 rpm and a cutting speed of 30 mm/sec using a dicer manufactured by DISCO Corporation. The cases in which there was no chip flying from the back grinding tape during dicing were marked “O”, and the cases in which there was chip flying were marked “x”. The result is shown in Table 2.
- (Measurement of Tensile Modulus and T-Peeling Strength after Ultraviolet Ray Irradiation (1) was Performed after Dicing)
- After dicing, the pressure-sensitive adhesive layer of each of the laminated sheets of Examples 2 and 4 and Comparative Example 3 was irradiated with an ultraviolet ray of an amount described in Table 2 (ultraviolet ray irradiation (1)). Thereafter, the tensile modulus of each pressure-sensitive adhesive layer was determined. Specifically, the tensile modulus was obtained from a value calculated from a tangent of a load-elongation curve measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The measurement conditions were as follows: a distance between chucks was 10 mm and a tensile speed was 50 mm/min. The results are shown in Table 2.
- The T-peeling strength between the pressure-sensitive adhesive layer of each of the laminated sheets and the resin composition layer was measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The peeling speed was 300 mm/min. The result is shown in Table 2.
- (Measurement of Tensile Modulus and Peeling Strength after Ultraviolet Ray Irradiation (2) was Performed after Pasting of Pressure-Sensitive Adhesive Tape)
- After dicing, a pressure-sensitive adhesive tape (BT-315 manufactured by Nitto Denko Corporation) was pasted to the back grinding tape surface of the wafer with a dicing tape under conditions of a pasting speed of 0.6 m/min, a roller temperature of 25° C., and a load of 0.5 MPa with a rubber laminating roller using a pasting apparatus manufactured by Taisho Laminator Co., Inc. Then, the pressure-sensitive adhesive layer of each of the laminated sheets of Examples 3 and 4 was irradiated with an ultraviolet ray of an amount described in Table 2 (ultraviolet ray irradiation (2)). Thereafter, the tensile modulus of each pressure-sensitive adhesive layer was determined. Specifically, the tensile modulus was obtained from a value calculated from a tangent of a load-elongation curve measured by with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The measurement conditions were as follows: a distance between chucks was 10 mm and a tensile speed was 50 mm/min. The results are shown in Table 2.
- The T-peeling strength between the pressure-sensitive adhesive layer of each of the laminated sheets and the resin composition layer was measured with a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation). The peeling speed was 300 ram/min. The results are shown in Table 2.
- (Evaluation of Peeling Property of Back Grinding Tape after Dicing)
- After the ultraviolet ray irradiation (1) and/or the ultraviolet ray irradiation (2), the pressure-sensitive adhesive tape was pulled using a Tensilon tensile tester (AGS-J manufactured by Shimadzu Corporation) with a T-peeling method at a peeling speed of 300 mm/min. The cases in which the back grinding tape was peeled from the resin composition layer with a condition that it was pasted to the pressure-sensitive adhesive tape were marked “O”, and the cases in which the back grinding tape was not peeled from the resin composition layer with a condition that it was pasted to the pressure-sensitive adhesive tape were marked “x”. However, the laminated sheet F was not evaluated because chip flying from the back grinding tape occurred during dicing. The results are shown in Table 2.
-
TABLE 2 Comparative Comparative Comparative Example 1 Example 2 Example 3 Example 4 Example 1 Example 2 Example 3 Tensile Modulus [MPa] 0.17 0.17 0.17 0.17 0.15 7.4 0.17 T-Peeling strength [N/20 mm] 0.47 0.47 0.47 0.47 8.0 or more 0.073 0.47 Evaluation of Chip Flying ∘ ∘ ∘ ∘ ∘ x ∘ from Back Grinding Tape During Dicing Radiant Exposure [mJ/cm2] of 0 50 0 50 0 0 400 UV Irradiation (1) After Dicing Tensile Modulus [MPa] After 0.17 4.7 0.17 4.7 0.15 7.4 7.4 UV Irradiation (1) T Peeling strength [N/20 mm] 0.47 0.2 0.47 0.2 8.0 or more 0.073 0.073 After UV Irradiation (1) Radiant Exposure [mJ/cm2] of 0 0 400 400 0 0 0 UV Irradiation (2) After Pasting of Peeling Tape Tensile Modulus [MPa] After 0.17 4.7 7.4 7.4 0.15 7.4 7.4 UV Irradiation (2) T-Peeling strength [N/20 mm] 0.47 0.2 0.073 0.073 8.0 or more 0.073 0.073 After UV Irradiation (2) Evaluation of Peeling Property ∘ ∘ ∘ ∘ x x x of Back Grinding Tape
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/580,054 US20150104649A1 (en) | 2011-12-12 | 2014-12-22 | Laminated Sheet and Method of Manufacturing Semiconductor Device Using the Laminated Sheet |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-271279 | 2011-12-12 | ||
JP2011271282A JP5944155B2 (en) | 2011-12-12 | 2011-12-12 | LAMINATED SHEET AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING LAMINATED SHEET |
JP2011271279A JP5911284B2 (en) | 2011-12-12 | 2011-12-12 | LAMINATED SHEET AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING LAMINATED SHEET |
JP2011-271282 | 2011-12-12 | ||
US13/712,707 US8951843B2 (en) | 2011-12-12 | 2012-12-12 | Laminated sheet and method of manufacturing semiconductor device using the laminated sheet |
US14/580,054 US20150104649A1 (en) | 2011-12-12 | 2014-12-22 | Laminated Sheet and Method of Manufacturing Semiconductor Device Using the Laminated Sheet |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/712,707 Continuation US8951843B2 (en) | 2011-12-12 | 2012-12-12 | Laminated sheet and method of manufacturing semiconductor device using the laminated sheet |
Publications (1)
Publication Number | Publication Date |
---|---|
US20150104649A1 true US20150104649A1 (en) | 2015-04-16 |
Family
ID=48572351
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/712,707 Expired - Fee Related US8951843B2 (en) | 2011-12-12 | 2012-12-12 | Laminated sheet and method of manufacturing semiconductor device using the laminated sheet |
US14/580,054 Abandoned US20150104649A1 (en) | 2011-12-12 | 2014-12-22 | Laminated Sheet and Method of Manufacturing Semiconductor Device Using the Laminated Sheet |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/712,707 Expired - Fee Related US8951843B2 (en) | 2011-12-12 | 2012-12-12 | Laminated sheet and method of manufacturing semiconductor device using the laminated sheet |
Country Status (4)
Country | Link |
---|---|
US (2) | US8951843B2 (en) |
KR (1) | KR101999856B1 (en) |
CN (1) | CN103165544A (en) |
TW (1) | TW201341199A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015218320A (en) * | 2014-05-21 | 2015-12-07 | 日立化成株式会社 | Method for producing ground base material, and film-shaped adhesive and laminated body used thereto |
EP3376528A4 (en) * | 2015-11-09 | 2019-07-10 | Furukawa Electric Co., Ltd. | Mask-integrated surface protection tape |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI674972B (en) * | 2013-08-23 | 2019-10-21 | 日商味之素股份有限公司 | Method for manufacturing film for component packaging |
KR20160077076A (en) * | 2013-10-30 | 2016-07-01 | 린텍 가부시키가이샤 | Semiconductor bonding adhesive sheet and semiconductor device manufacturing method |
JP6677966B2 (en) * | 2014-11-17 | 2020-04-08 | 日東電工株式会社 | Sealing sheet with separator and method of manufacturing semiconductor device |
TWI641494B (en) * | 2015-11-04 | 2018-11-21 | 日商琳得科股份有限公司 | Sheet for forming first protective film, method for forming first protective film and method for manufacturing semiconductor chip |
DE102016109693B4 (en) * | 2016-05-25 | 2022-10-27 | Infineon Technologies Ag | Process for separating semiconductor dies from a semiconductor substrate and semiconductor substrate arrangement |
JP6647267B2 (en) * | 2017-11-09 | 2020-02-14 | 古河電気工業株式会社 | Manufacturing method of semiconductor chip |
JP2023001915A (en) * | 2021-06-21 | 2023-01-06 | 日東電工株式会社 | Adhesive sheet for semiconductor wafer processing |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3539528B2 (en) | 1996-01-31 | 2004-07-07 | 日立化成工業株式会社 | Semiconductor device and manufacturing method thereof |
JP3604248B2 (en) | 1997-02-25 | 2004-12-22 | 沖電気工業株式会社 | Method for manufacturing semiconductor device |
JPH10270497A (en) | 1997-03-27 | 1998-10-09 | Sumitomo Bakelite Co Ltd | Semiconductor element fixing method |
JP2002118147A (en) | 2000-10-11 | 2002-04-19 | Mitsui Chemicals Inc | Method of mounting semiconductor chip to printed circuit board, and mounting sheet used for embodying the method |
JP4952585B2 (en) * | 2006-01-23 | 2012-06-13 | 日立化成工業株式会社 | Adhesive composition, film adhesive, adhesive sheet, and semiconductor device using the same |
JP2008130588A (en) | 2006-11-16 | 2008-06-05 | Toray Ind Inc | Electronic device substrate with adhesive composition for semiconductor, electronic device system employing the same, and manufacturing method of the electronic device system |
CN101689513B (en) * | 2007-02-09 | 2011-07-13 | Lg伊诺特有限公司 | Multifunctional die attachment film and semiconductor packaging method using the same |
JP2010056407A (en) * | 2008-08-29 | 2010-03-11 | Hitachi Chem Co Ltd | Wafer processing tape |
JP2010263041A (en) * | 2009-05-01 | 2010-11-18 | Nitto Denko Corp | Dicing tape with die attach film, and method of manufacturing semiconductor apparatus |
WO2010147356A2 (en) * | 2009-06-15 | 2010-12-23 | (주)Lg화학 | Wafer processing base |
JP2011054940A (en) * | 2009-08-07 | 2011-03-17 | Nitto Denko Corp | Adhesive sheet for supporting and protecting semiconductor wafer and method for grinding back of semiconductor wafer |
JP2011054939A (en) * | 2009-08-07 | 2011-03-17 | Nitto Denko Corp | Adhesive sheet for holding and protecting semiconductor wafer, and method for grinding back of semiconductor wafer |
JP5143196B2 (en) * | 2009-09-28 | 2013-02-13 | 日東電工株式会社 | Film for semiconductor devices |
JP5313837B2 (en) * | 2009-10-23 | 2013-10-09 | 日東電工株式会社 | Removable adhesive sheet |
-
2012
- 2012-12-06 CN CN2012105203573A patent/CN103165544A/en active Pending
- 2012-12-06 TW TW101145852A patent/TW201341199A/en unknown
- 2012-12-10 KR KR1020120142578A patent/KR101999856B1/en active IP Right Grant
- 2012-12-12 US US13/712,707 patent/US8951843B2/en not_active Expired - Fee Related
-
2014
- 2014-12-22 US US14/580,054 patent/US20150104649A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015218320A (en) * | 2014-05-21 | 2015-12-07 | 日立化成株式会社 | Method for producing ground base material, and film-shaped adhesive and laminated body used thereto |
EP3376528A4 (en) * | 2015-11-09 | 2019-07-10 | Furukawa Electric Co., Ltd. | Mask-integrated surface protection tape |
US11707804B2 (en) | 2015-11-09 | 2023-07-25 | Furukawa Electric Co., Ltd. | Mask-integrated surface protective tape |
Also Published As
Publication number | Publication date |
---|---|
US20130149842A1 (en) | 2013-06-13 |
CN103165544A (en) | 2013-06-19 |
US8951843B2 (en) | 2015-02-10 |
KR101999856B1 (en) | 2019-07-12 |
TW201341199A (en) | 2013-10-16 |
KR20130066519A (en) | 2013-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8951843B2 (en) | Laminated sheet and method of manufacturing semiconductor device using the laminated sheet | |
US8617928B2 (en) | Dicing/die bonding film | |
US20120070960A1 (en) | Dicing die bond film, method of manufacturing dicing die bond film, and method of manufacturing semiconductor device | |
US9142457B2 (en) | Dicing die bond film and method of manufacturing semiconductor device | |
TWI428419B (en) | Cut crystal sticky film | |
KR101417205B1 (en) | Dicing/die bonding film | |
JP4430085B2 (en) | Dicing die bond film | |
US7829441B2 (en) | Thermosetting die-bonding film | |
JP4801127B2 (en) | Manufacturing method of dicing die-bonding film | |
KR101370771B1 (en) | Dicing die-bonding film | |
US20090209089A1 (en) | Dicing die-bonding film | |
CN104946152B (en) | Dicing film, dicing/die bonding film, and method for manufacturing semiconductor device | |
US20110256666A1 (en) | Thermosetting die bond film, dicing die bond film and semiconductor device | |
US20110057331A1 (en) | Thermosetting die bonding film, dicing die bonding film and semiconductor device | |
US20120153508A1 (en) | Thermosetting die-bonding film | |
US20100029061A1 (en) | Dicing die-bonding film | |
US20120104134A1 (en) | Fill roll for producing semiconductor device | |
JP5944155B2 (en) | LAMINATED SHEET AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING LAMINATED SHEET | |
US20120126379A1 (en) | Die bond film, dicing die bond film, method of manufacturing die bond film, and semiconductor device having die bond film | |
JP2014082498A (en) | Manufacturing method of dicing die-bonding film | |
CN111004588A (en) | Dicing die bonding film | |
JP5911284B2 (en) | LAMINATED SHEET AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING LAMINATED SHEET | |
JP5656741B2 (en) | Manufacturing method of dicing die-bonding film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: NITTO DENKO CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SENZAI, HIROYUKI;TANAKA, SHUMPEI;MIZUNO, KOJI;SIGNING DATES FROM 20121203 TO 20141203;REEL/FRAME:034572/0291 |
|
AS | Assignment |
Owner name: NITTO DENKO CORPORATION, JAPAN Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE OF INVENTOR SHUMPEI TANAKA PREVIOUSLY RECORDED ON REEL 034572 FRAME 0291. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECT DATE OF EXECUTION FOR INVENTOR SHUMPEI TANAKA TO BE 12/03/2012;ASSIGNORS:SENZAI, HIROYUKI;TANAKA, SHUMPEI;MIZUNO, KOJI;REEL/FRAME:035159/0532 Effective date: 20121203 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |