US20150034011A1 - Chemical vapor deposition apparatus - Google Patents
Chemical vapor deposition apparatus Download PDFInfo
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- US20150034011A1 US20150034011A1 US14/515,535 US201414515535A US2015034011A1 US 20150034011 A1 US20150034011 A1 US 20150034011A1 US 201414515535 A US201414515535 A US 201414515535A US 2015034011 A1 US2015034011 A1 US 2015034011A1
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- United States
- Prior art keywords
- valve
- evaporator
- chamber
- parylene
- chemical vapor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
Abstract
A chemical vapor deposition apparatus and a method for forming a parylene film are provided. The chemical vapor deposition apparatus includes a buffer chamber, a deposition chamber, a pyrolysis chamber, an evaporator, and a sorter. The buffer chamber has a first valve, a second valve, and a carrying apparatus. The evaporator is connected with the second valve. The pyrolysis chamber is connected with the evaporator through a first pipe, wherein the first pipe has a third valve. The deposition chamber is connected with the pyrolysis chamber. The sorter is connected with the buffer chamber through the first valve.
Description
- This application is a divisional application of and claims the priority benefit of U.S. application Ser. No. 12/876,226, filed on Sep. 6, 2010, now allowed, which claims the priority benefit of Taiwan application serial no. 98143702, filed on Dec. 18, 2009. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of this specification.
- 1. Field of the Invention
- The invention relates to a deposition apparatus and a method of forming a film. More particularly, the invention relates to a chemical vapor deposition apparatus and a method of forming a parylene film.
- 2. Description of Related Art
- Parylene film has superior water resistance and oxygen resistance, high transparency and insulation, and capability in preventing rust, corrosion, and efflorescence. Thus, parylene film is usually adopted as the gas barrier layer on the surface of the flexible plastic substrate in current flexible displays.
- In conventional fabrication, a parylene film is generally formed by a chemical vapor deposition (CVD) method. Firstly, powdered parylene is placed in an evaporator and heated to 150° C. for evaporating powdered parylene. Parylene gas is then passed to a pyrolysis chamber and heated to 650° C. for pyrolysis. Next, parylene monomer is delivered to a deposition chamber and deposited on a substrate.
- Generally, in a CVD apparatus for performing the aforementioned CVD method, throttle valves are disposed respectively between the evaporator and the pyrolysis chamber and between the pyrolysis chamber and the deposition chamber for adjusting the pressure in the CVD apparatus and for controlling the flow of parylene through the throttle valves for adjusting the thickness of the parylene film deposited on the substrate. However, the evaporated parylene gas easily deposits in an environment under 150° C. Accordingly, the parylene film is usually formed on the throttle valves, and this leads to damages of the throttle valves and requires costly replacement fees. In addition, when powdered raw material is replaced with aqueous raw material to overcome the above problem, the fabrication cost significantly increases as the price of aqueous raw material is about 100 times of that of powdered raw material.
- Other than the foregoing CVD apparatus, another CVD apparatus for forming the parylene film is introduced. In this CVD apparatus, throttle valves are not disposed between the evaporator and the pyrolysis chamber and between the pyrolysis chamber and the deposition chamber. In other words, the evaporator, the pyrolysis chamber, and the deposition chamber are connected to one another, and the damages of the throttle valves can therefore be avoided. Nevertheless, in the process of forming the parylene film with this CVD apparatus, when the parylene material has been consumed, the apparatus needs to be stopped to refill the parylene powder and cool the temperature therefore to room temperature, thereby failing to fabricate continuously.
- The invention is directed to a chemical vapor deposition (CVD) apparatus capable of fabricating continuously.
- The invention is further directed to a method of forming a parylene film capable of refilling a parylene material when continuously fabricating the parylene film.
- The invention is directed to a CVD apparatus including a buffer chamber, an evaporator, a pyrolysis chamber, a deposition chamber, and a sorter. The buffer chamber has a first valve, a second valve, and a rotative carrying apparatus. The evaporator is connected with the second valve. The pyrolysis chamber is connected with the evaporator through a first pipe, where the first pipe has a third valve. The deposition chamber is connected with the pyrolysis chamber. The sorter is connected with the buffer chamber through the first valve.
- The invention is further directed to a method of forming a parylene film and the method involves providing a CVD apparatus. The CVD apparatus includes a buffer chamber, an evaporator, a pyrolysis chamber, and a deposition chamber. The buffer chamber has a first valve and a second valve. The evaporator is connected with the second valve. The pyrolysis chamber is connected with the evaporator through a first pipe, where the first pipe has a third valve. The deposition chamber is connected with the pyrolysis chamber. A parylene material is placed in the buffer chamber through the first valve. The first valve and the second valve are turned off and the pressure in the buffer chamber and the pressure in the evaporator are balanced. The second valve is turned on and the parylene material is delivered into the evaporator. The parylene material is evaporated in the evaporator to form a parylene gas. The third valve is turned on for passing the parylene gas into the pyrolysis chamber through the first pipe. The parylene gas is pyrolyzed in the pyrolysis chamber to form a parylene monomer. The parylene monomer is delivered to the deposition chamber for deposition so as to form a parylene film.
- Accordingly, in the invention, the buffer chamber is disposed in front of the evaporator; thus when refilling the parylene material during the fabrication, the refilling step can be performed by turning off the valve between the buffer chamber and the evaporator and delivering the parylene material to the buffer chamber. Moreover, the stopping of the CVD apparatus or the discontinuation of the fabrication caused by releasing vacuum can be prevented by refilling the parylene material with the foregoing method. Consequently, the parylene film can be fabricated continuously.
- In order to make the aforementioned and other features of the invention more comprehensible, embodiments accompanying figures are described in detail below.
- The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
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FIG. 1 is a schematic view of a chemical vapor deposition (CVD) apparatus according to one embodiment of the invention. -
FIG. 2 is a schematic cross-sectional view of a buffer chamber in a CVD apparatus according to one embodiment of the invention. -
FIG. 3 is a schematic cross-sectional view of an evaporator in a CVD apparatus according to one embodiment of the invention. -
FIG. 4 is a flowchart illustrating a formation of a parylene film by using a CVD apparatus of the invention. -
FIG. 1 is a schematic view of a chemical vapor deposition (CVD) apparatus according to one embodiment of the invention. Referring toFIG. 1 , aCVD apparatus 100 includes abuffer chamber 102, anevaporator 104, apyrolysis chamber 106, and adeposition chamber 108. Thebuffer chamber 102 has afirst valve 110 and asecond valve 112. Thefirst valve 110 is, for example, a gate valve configured to connect or disconnect thebuffer chamber 102 and the external environment. Thesecond valve 112 is, for example, a gate valve configured to connect or disconnect thebuffer chamber 102 and theevaporator 104. Theevaporator 104 is connected with thesecond valve 112. Theevaporator 104 evaporates the material to form a reactive gas adopted in the CVD process. Thepyrolysis chamber 106 is connected with theevaporator 104 through afirst pipe 114, where thefirst pipe 114 has athird valve 116. Thepyrolysis chamber 106 is configured to perform a pyrolysis to the reactive gas in the CVD process. Thethird valve 116 is, for example, an air actuated valve configured to control whether or not to pass the reactive gas generated in theevaporator 104 to thepyrolysis chamber 106. Thedeposition chamber 108 is connected with thepyrolysis chamber 106. In the present embodiment, thedeposition chamber 108 has afourth valve 118 and thepyrolysis chamber 106 is connected with thedeposition chamber 108 through thefourth valve 118. Thedeposition chamber 108 is configured to perform a CVD so as to form a film on a substrate to be deposited in thedeposition chamber 108. Thefourth valve 118 is, for example, a gate valve configured to connect or disconnect thedeposition chamber 108 and thepyrolysis chamber 106. - Moreover, the
CVD apparatus 100 further includes acold trap 120. Thecold trap 120 is connected with theevaporator 104 through asecond pipe 122, where thesecond pipe 122 has afifth valve 124. Thecold trap 120 traps the reactive gas which is in an unstable evaporated state within theevaporator 104. The unstable evaporated state is a state where features such as an evaporation rate, a composition of the generated gas and so on are unstable. Thefifth valve 124 is, for example, an air actuated valve configured to control whether or not to pass the reactive gas generated in theevaporator 104 to thecold trap 120. - Additionally, the
CVD apparatus 100 further includes apump 126. Thepump 126 is connected with thecold trap 120 through athird pipe 128. Thepump 126 evacuates the gas passed to thecold trap 120. - The
CVD apparatus 100 further includes asorter 130. Thesorter 130 is connected with thebuffer chamber 102 through thefirst valve 110. Thesorter 130 precisely sorts the material in the external environment and delivers the sorted material into thebuffer chamber 102 through thefirst valve 110. - Obviously, depending on actual requirements, the
CVD apparatus 100 can also include other conventional apparatuses that are not illustrated herein, for example, mass flow controllers, throttle valves, and so on. The mass flow controllers are configured to pass the reactive gas generated in theevaporator 104 to thepyrolysis chamber 106 quantitatively. The throttle valves controls the pressure within thedeposition chamber 108. - The
buffer chamber 102 and theevaporator 104 are further illustrated below. -
FIG. 2 is a schematic cross-sectional view illustrating thebuffer chamber 102 according to one embodiment of the invention. Referring toFIG. 2 , thebuffer chamber 102 has thefirst valve 110 and thesecond valve 112. Thebuffer chamber 102 has a carryingapparatus 132. In the present embodiment, the carryingapparatus 132 is a rotative carrying apparatus. When the material is delivered to thebuffer chamber 102 through thefirst valve 110, the material is first placed on the carryingapparatus 132. After thesecond valve 112 is turned on, the carryingapparatus 132 is rotated, so that the material is passed through thesecond valve 112 and delivered to theevaporator 104. In other embodiments, carrying apparatuses of other types can also be utilized, and the invention is not limited thereto. -
FIG. 3 is a schematic cross-sectional view illustrating theevaporator 104 according to one embodiment of the invention. Referring toFIG. 3 , theevaporator 104 includes anevaporation region 134 and amaterial receiving region 136. Amaterial receiving apparatus 138 is disposed movably in theevaporator 104. Specifically, thematerial receiving apparatus 138 moves in theevaporation region 134 and thematerial receiving region 136. In the present embodiment, thematerial receiving apparatus 138 moves both in vertical and in horizontal directions (as shown by arrows) in theevaporator 104. When the material is delivered from thebuffer chamber 102 to theevaporator 104, thematerial receiving apparatus 138 first moves to a location close to thesecond valve 112 in thematerial receiving region 138 to receive the material, and then moves to theevaporation region 134 to evaporate the material. In other words, thematerial receiving region 136 is configured to receive the material, thematerial receiving apparatus 138 sends the material to theevaporation region 134, and theevaporation region 134 is configured to heat the material to form a reactive gas in an evaporated state. In other embodiments, the material receiving apparatus can move in other manners depending on the design of theevaporator 104, and the invention is not limited thereto. - It should be noted that in the embodiment illustrated in
FIG. 1 , thebuffer chamber 102 is located above theevaporator 104; however, in other embodiments, thebuffer chamber 102 can be located on a side of theevaporator 104 depending on actual requirements. - In the
CVD apparatus 100, since thebuffer chamber 102 is disposed in front of theevaporator 104, when the material in thebuffer chamber 102 is all delivered to theevaporator 104 or when the material needs to be further refilled in the CVD process, the refilling step can be performed by turning off thesecond valve 112 and delivering the material into thebuffer chamber 102 through thefirst valve 110 without stopping theCVD apparatus 100 or releasing vacuum in theevaporator 104. As a consequence, the continuous fabrication can be achieved. - In the following, a flowchart illustrating steps of forming a parylene film by using the
CVD apparatus 100 is described. -
FIG. 4 is a flowchart illustrating a formation of a parylene film by using theCVD apparatus 100. Referring toFIGS. 1 , 2, 3, and 4, the parylene material is placed in thebuffer chamber 102 instep 400. The parylene material is, for example, in powder form. The parylene material is placed in thebuffer chamber 102 by, for example, precisely sorting the parylene material with thesorter 130 and placing the material in the carryingapparatus 132 in thebuffer chamber 102 through thefirst valve 110. - In
step 402, thefirst valve 110 and thesecond valve 112 are turned off and the pressure in thebuffer chamber 102 and the pressure in theevaporator 104 are balanced. The pressure in thebuffer chamber 102 and the pressure in theevaporator 104 are balanced by, for example, performing a vacuuming step, such that thebuffer chamber 102 and theevaporator 104 attain the same negative pressure. - In
step 404, when the pressure of thebuffer chamber 102 and the pressure of theevaporator 104 are balanced, thesecond valve 112 is turned on to deliver the parylene material into theevaporator 104. The parylene material is delivered into theevaporator 104 by, for example, rotating the carryingapparatus 132 in thebuffer chamber 102 to deliver the parylene material into thematerial receiving apparatus 138 located in thematerial receiving region 136 of theevaporator 104. - In
step 406, thematerial receiving apparatus 138 is moved from thematerial receiving region 136 to theevaporation region 134 to evaporate the parylene material so as to generate the parylene gas. - In
step 408, when the parylene gas is in an unstable evaporated state, the parylene gas is passed to thecold trap 120 through thesecond pipe 122. The unstable evaporated state is a state where features such as an evaporation rate, a composition of the generated gas and so on are unstable. In the evaporating process, since a temperature of theevaporator 104 is raised from room temperature to an evaporating temperature of parylene (about 150° C.), the parylene gas generated in the beginning of the evaporation is an unstable evaporated state. Therefore, the quality of the parylene film formed can be effectively enhanced by passing the parylene gas, which is in an unstable evaporated state, to thecold trap 120. During the fabrication, thepump 126 evacuates the parylene gas passed to thecold trap 120. - In
step 410, after the parylene gas is in a stable evaporated state, thefifth valve 124 is turned off and thethird valve 116 is turned on, and the parylene gas is passed to thepyrolysis chamber 106 through thefirst pipe 114 so as to pyrolyze the parylene gas in thepyrolysis chamber 106 for forming the parylene monomer. - In
step 412, thefourth valve 118 is turned on to deliver the parylene monomer to thedeposition chamber 108 for deposition so as to form the parylene film. - In
step 414, when the parylene material in thebuffer chamber 102 has been consumed, thesecond valve 112 is turned off and thefirst valve 110 is turned on to refill the parylene material. Step 400 throughstep 412 are repeated until the parylene film of the required thickness is formed. - In the present embodiment, the refill of the parylene material during the fabrication can be performed by turning off the
second valve 112 between thebuffer chamber 102 and theevaporator 104 and delivering the parylene material into thebuffer chamber 102. As a consequence, the step of refilling the parylene material can be performed without stopping theCVD apparatus 100 or releasing vacuum in theevaporator 104. The fabrication of the parylene film can thus be performed continuously. - Although the invention has been described with reference to the above embodiments, it will be apparent to one of the ordinary skill in the art that modifications to the described embodiment may be made without departing from the spirit of the invention. Accordingly, the scope of the invention will be defined by the attached claims not by the above detailed descriptions.
Claims (10)
1. A chemical vapor deposition apparatus, comprising:
a buffer chamber, having a first valve, a second valve, and a carrying apparatus;
an evaporator, connected with the second valve;
a pyrolysis chamber, connected with the evaporator through a first pipe, wherein the first pipe has a third valve;
a deposition chamber, connected with the pyrolysis chamber; and
a sorter connected with the buffer chamber through the first valve.
2. The chemical vapor deposition apparatus as claimed in claim 1 , wherein the deposition chamber has a fourth valve and the pyrolysis chamber is connected with the deposition chamber through the fourth valve.
3. The chemical vapor deposition apparatus as claimed in claim 1 , wherein the evaporator comprises a material receiving region and an evaporation region, wherein the material receiving region is configured to receive a material and the evaporation region is configured to heat up the material.
4. The chemical vapor deposition apparatus as claimed in claim 1 , wherein the evaporator further comprises a material receiving apparatus movably disposed in the evaporator.
5. The chemical vapor deposition apparatus as claimed in claim 1 , further comprising a cold trap connected with the evaporator through a second pipe, wherein the second pipe has a fifth valve.
6. The chemical vapor deposition apparatus as claimed in claim 5 , wherein the fifth valve is an air actuated valve.
7. The chemical vapor deposition apparatus as claimed in claim 1 , wherein the first valve and the second valve are gate valves respectively.
8. The chemical vapor deposition apparatus as claimed in claim 1 , wherein the third valve is an air actuated valve.
9. The chemical vapor deposition apparatus as claimed in claim 2 , wherein the fourth valve is a gate valve.
10. The chemical vapor deposition apparatus as claimed in claim 5 , further comprising a pump connected with the cold trap through a third pipe.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US14/515,535 US20150034011A1 (en) | 2009-12-18 | 2014-10-16 | Chemical vapor deposition apparatus |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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TW98143702 | 2009-12-18 | ||
TW098143702A TWI564427B (en) | 2009-12-18 | 2009-12-18 | Method for forming parylene film |
US12/876,226 US8889224B2 (en) | 2009-12-18 | 2010-09-06 | Method of forming parylene film |
US14/515,535 US20150034011A1 (en) | 2009-12-18 | 2014-10-16 | Chemical vapor deposition apparatus |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US12/876,226 Division US8889224B2 (en) | 2009-12-18 | 2010-09-06 | Method of forming parylene film |
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US20150034011A1 true US20150034011A1 (en) | 2015-02-05 |
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US12/876,226 Active 2033-04-01 US8889224B2 (en) | 2009-12-18 | 2010-09-06 | Method of forming parylene film |
US14/515,535 Abandoned US20150034011A1 (en) | 2009-12-18 | 2014-10-16 | Chemical vapor deposition apparatus |
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Application Number | Title | Priority Date | Filing Date |
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US12/876,226 Active 2033-04-01 US8889224B2 (en) | 2009-12-18 | 2010-09-06 | Method of forming parylene film |
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TW (1) | TWI564427B (en) |
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TWI685582B (en) * | 2018-07-24 | 2020-02-21 | 國立高雄科技大學 | Method for manufacturing parylene film opening |
WO2022108326A1 (en) * | 2020-11-18 | 2022-05-27 | 주식회사 엘지화학 | Deposition apparatus for organic light-emitting diode |
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TWI564427B (en) * | 2009-12-18 | 2017-01-01 | 財團法人工業技術研究院 | Method for forming parylene film |
US8723042B2 (en) * | 2011-03-17 | 2014-05-13 | Electronics And Telecommunications Research Institute | Flexible flat cable and manufacturing method thereof |
TWI458843B (en) * | 2011-10-06 | 2014-11-01 | Ind Tech Res Inst | Evaporation apparatus and method of forminf organic film |
CN104593731B (en) * | 2015-02-04 | 2017-05-03 | 深圳市华星光电技术有限公司 | Vapor deposition-replacement integrated apparatus and application method thereof |
CN113025960B (en) * | 2021-03-05 | 2022-07-19 | 贵州航天林泉电机有限公司 | Parylene F-type vapor deposition method |
DE102021133627A1 (en) | 2021-12-17 | 2023-06-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Device for coating a strip-shaped substrate with a parylene layer |
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TWI685582B (en) * | 2018-07-24 | 2020-02-21 | 國立高雄科技大學 | Method for manufacturing parylene film opening |
WO2022108326A1 (en) * | 2020-11-18 | 2022-05-27 | 주식회사 엘지화학 | Deposition apparatus for organic light-emitting diode |
Also Published As
Publication number | Publication date |
---|---|
TWI564427B (en) | 2017-01-01 |
TW201122147A (en) | 2011-07-01 |
US20110151121A1 (en) | 2011-06-23 |
US8889224B2 (en) | 2014-11-18 |
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