CN115354307B - Vacuum heating substrate equipment - Google Patents
Vacuum heating substrate equipment Download PDFInfo
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- CN115354307B CN115354307B CN202211164987.1A CN202211164987A CN115354307B CN 115354307 B CN115354307 B CN 115354307B CN 202211164987 A CN202211164987 A CN 202211164987A CN 115354307 B CN115354307 B CN 115354307B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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Abstract
The application relates to the technical field of semiconductor manufacturing, in particular to vacuum heating substrate equipment. The application provides vacuum heating substrate equipment, which comprises a substrate processing chamber, a vacuum adsorption type heating device and a pressure control system; the vacuum adsorption type heating device is arranged in the substrate processing chamber and is used for placing a substrate and heating the substrate; the pressure control system comprises a suction aconite system, a desorption aconite system, a cleaning subsystem and a pressure regulating subsystem; the desorption monkshood system is connected with the adsorption subsystem in an on-off manner and is used for realizing desorption on the substrate, and the desorption monkshood system is provided with a particle collector for collecting particles accumulated in the process. The vacuum heating substrate equipment provided by the application can improve the uniformity of the substrate film and simultaneously avoid the problem of frequent replacement of the pressure control system.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to vacuum heating substrate equipment.
Background
Thin film deposition techniques are used to fabricate thin films for microelectronic devices, forming deposits on a substrate, and common thin film deposition techniques include physical vapor deposition, chemical vapor deposition, etc., with the continued development of semiconductor technology nodes, sub-atmospheric chemical vapor deposition (Sub-atmospheric pressure chemical vapor deposition, SACVD) has received widespread attention.
During these thin film deposition processes, it is often necessary to place the substrate in a support structure for clamping and heating. However, the existing support structure has uneven adsorption clamping force on the substrate, the adsorption force of the substrate near the center and the adsorption force of the substrate near the edge are different greatly, and the uniformity of the thin film is poor due to micro-warping of the substrate along with the thin film deposition.
Meanwhile, different vacuum levels are required to be maintained in the chamber during different processes, and thus, it is generally required to connect a pressure control system to the chamber.
However, in the process, contaminants such as byproducts and residual precursors generally enter the pressure control system, and the pipelines and valves in the existing pressure control system are not specially designed, so that the problem of blockage caused by the contaminants entering the pressure control system is easily caused, and the pressure control system needs frequent maintenance and even replacement.
Disclosure of Invention
The application aims to provide vacuum heating substrate equipment, which solves the problems that the edge of a deposited thick film is warped and the uniformity of the thin film is poor due to lower adsorption force of the edge of the substrate in the vacuum heating substrate equipment in the prior art.
It is a further object of the present application to provide a vacuum heating substrate apparatus that solves the problem of frequent replacement cycles of the pressure control system due to particle accumulation in prior art vacuum heating substrate apparatuses.
In order to achieve the above object, the present application provides a vacuum heating substrate apparatus comprising a substrate processing chamber, a vacuum adsorption type heating device, and a pressure control system;
the vacuum adsorption type heating device is arranged in the substrate processing chamber and is used for placing a substrate and heating the substrate;
the pressure control system is connected with the vacuum adsorption type heating device, the substrate processing chamber and the pump end in an on-off mode and used for controlling the pressure of the vacuum adsorption type heating device and the pressure of the substrate processing chamber;
wherein the pressure control system comprises a suction aconite system, a desorption aconite system, a cleaning subsystem and a pressure regulating subsystem;
the adsorption subsystem is connected with the vacuum adsorption heating device in an on-off mode and is used for adsorbing the substrate;
the desorption monkshood system is connected with the adsorption subsystem in an on-off manner and is used for realizing desorption on the substrate, and is provided with a particle collector for collecting particles accumulated in the process;
the cleaning subsystem is connected with the adsorption subsystem and the desorption aconite system in an on-off manner and is used for cleaning the adsorption subsystem and the desorption aconite system;
the pressure regulating subsystem is connected with the substrate processing chamber, the adsorption subsystem, the desorption monkshood system and the cleaning subsystem in an on-off mode and is used for regulating the air pressure in the substrate processing chamber.
In one embodiment, the vacuum adsorption type heating device comprises a support body, a heater and a support column:
the upper surface of the supporting main body is distributed with a plurality of annular grooves for placing the substrate;
the heaters are distributed in the support main body;
the support column is connected with the lower surface of the support main body.
In one embodiment, the plurality of annular grooves of the supporting body are concentric annular grooves, which are mutually exclusive;
at least 1 adsorption hole is arranged in each concentric annular groove and used for adsorbing a substrate;
the at least 1 adsorption hole penetrates through the support main body and the support column and then is connected with the pressure control system.
In one embodiment, the annular groove has a width ranging from 0.5mm to 1mm and a depth ranging from 0.5mm to 1mm.
In one embodiment, the adsorbent pore diameter ranges from 0.5mm to 2mm.
In one embodiment, the upper surface roughness of the support body ranges from 0.3 μm to 1 μm.
In one embodiment, the pressure control system is connected to the bottom of the support column and is in communication with the suction holes in the support body.
In one embodiment, the number of the vacuum adsorption heating devices is at least one;
the adsorption subsystem of the pressure control system comprises at least one first adsorption pipeline, a second adsorption pipeline, a third adsorption pipeline, a first valve and a second valve;
the number of the at least one first adsorption pipeline corresponds to the number of the vacuum adsorption heating devices;
one end of the first adsorption pipeline is connected with a support column of the vacuum adsorption heating device, the other end of the first adsorption pipeline is connected with the first valve after being converged, the first valve is connected with the second valve through the second adsorption pipeline, and the second valve is connected with the lower part of the throttle valve, which is close to the pump end, through the third adsorption pipeline.
In one embodiment, the desorption monkshood system comprises a third valve, a particle collector, a first desorption line, and a second desorption line:
the first desorption pipeline is led out from the second adsorption pipeline and is connected to a third valve;
the third valve is connected with the upper end of the pressure regulating valve through a second desorption pipeline;
the particle collector is connected with the second desorption pipeline.
In one embodiment, the cleaning subsystem includes a fourth valve, a first cleaning line, and a second cleaning line:
the first cleaning pipeline is led out from the second desorption pipeline between the particle collector and the third valve and is connected to the fourth valve;
the fourth valve is connected with the lower part of the throttle valve close to the pump end through a second cleaning pipeline.
In one embodiment, the pressure regulating subsystem includes a throttle valve, a pressure regulating valve, a first regulating line, a second regulating line, and a third regulating line:
the pressure regulating valve is connected with the substrate processing chamber through a first regulating pipeline and connected with the throttle valve through a second regulating pipeline;
the throttle valve is connected with the pump end through a third adjusting pipeline.
In one embodiment, the first and second valves are opened and the third and fourth valves are closed during a substrate adsorption process or an adsorption line cleaning process.
In one embodiment, the first valve and the third valve are opened and the second valve and the fourth valve are closed during a substrate desorption process or a desorption line cleaning process.
In one embodiment, during particle collector cleaning, the fourth valve is opened and the first, second and third valves are closed.
The vacuum heating substrate equipment provided by the application has the following beneficial effects:
1) By improving the supporting main body structure of the vacuum adsorption type heating device, the adsorption Kong Jiejue adsorption force problem is respectively arranged at the inner ring and the outer ring, and the problem that the uniformity of a warp film is poor at the edge of a deposited thick film due to lower adsorption force at the edge of a substrate is prevented;
2) By improving the pressure control system, adding a particle collector and introducing clean gas, the problem that the pressure control system is frequently replaced due to particle accumulation and blockage is solved.
Drawings
The above and other features, properties and advantages of the present application will become more apparent from the following description of embodiments taken in conjunction with the accompanying drawings in which like reference characters designate like features throughout the drawings, and in which:
FIG. 1 discloses a schematic diagram of a vacuum heating substrate apparatus according to an embodiment of the present application;
FIG. 2a discloses a top view of a vacuum adsorption heating apparatus according to one embodiment of the present application;
FIG. 2b discloses a cross-sectional view of a vacuum adsorption heating apparatus according to an embodiment of the present application;
FIG. 3 discloses a pressure control system control flow diagram of a deposition process according to an embodiment of the application;
FIG. 4 discloses a control flow diagram of a pressure control system for a cleaning process in accordance with one embodiment of the present application;
FIG. 5 is a schematic diagram showing simulation results of disk surface pressure according to an embodiment of the application.
The meaning of the reference numerals in the figures is as follows:
a 100 substrate processing chamber;
200a vacuum adsorption heating device;
200b vacuum adsorption heating device;
210 a support body;
211 circular grooves;
212 adsorption holes;
220 support columns;
230 a heater;
311a first adsorption line;
311b second adsorption line
312 a second adsorption line;
313 a third adsorption line;
314 a first valve;
315 a second valve;
321 a first desorption line;
322 a second desorption line;
323 a third valve;
324 particle collector;
331 a first cleaning line;
332 a second cleaning line;
333 fourth valve;
341 a first conditioning line;
342 a second conditioning line;
343 a third conditioning line;
344 pressure regulating valve;
345 throttle valve;
401 gas inlet;
402 gas inlet;
403 gas inlet
404 pump end;
500 a first pressure curve;
a 600 second pressure curve;
701, at the groove of the inner ring;
702 at the outer race groove.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
FIG. 1 is a schematic view of a vacuum heating substrate apparatus according to an embodiment of the present application, as shown in FIG. 1, the vacuum heating substrate apparatus according to the present application includes a substrate processing chamber 100, a vacuum adsorption type heating device, and a pressure control system;
the vacuum adsorption type heating device is arranged in the substrate processing chamber 100, and the bottom of the vacuum adsorption type heating device penetrates through the substrate processing chamber 100 and then is connected with the pressure control system to be used for placing a substrate and heating the substrate;
the pressure control system is connected with the vacuum adsorption heating device, the substrate processing chamber 100 and the pump end 404 in an on-off mode, and controls the pressure of the vacuum adsorption heating device and the substrate processing chamber 100.
As shown in fig. 1, the number of vacuum adsorption type heating apparatuses is 2, including a vacuum adsorption type heating apparatus 200a and a vacuum adsorption type heating apparatus 200b, symmetrically distributed inside the substrate processing chamber 100.
The structural function of the vacuum adsorption type heating apparatus will be described with reference to fig. 1 and fig. 2a and 2 b.
Fig. 2a and 2b disclose a top view and a cross-sectional view, respectively, of a vacuum adsorption type heating apparatus according to an embodiment of the present application, as shown in fig. 2a and 2b, including a support body 210, a heater 230, and a support column 220:
the support body 210 has a plurality of annular grooves 211 distributed on an upper surface thereof for placing and supporting a substrate;
the heaters 230 are distributed inside the support body 210;
the support column 220 is connected to the lower surface of the support body 210.
Further, the plurality of annular grooves 211 distributed on the upper surface of the supporting body 210 are concentric annular grooves, which are mutually exclusive;
at least 1 adsorption hole 212 is formed in each annular groove 211, and the adsorption holes 212 penetrate through the support body 210 and the support columns 220 and then are connected with a pressure control system to realize substrate adsorption.
Further, the annular groove 211 has a width ranging from 0.5mm to 1mm and a depth ranging from 0.5mm to 1mm.
Further, the diameter of the adsorption hole 221 is 0.5mm to 2mm.
Further, the surface roughness of the support body 210 ranges from 0.3 μm to 1 μm.
Further, the heater 230 includes a plurality of resistive wires that are annularly distributed within the support body 210.
Further, a support column 220 is coupled to the center of the lower surface of the support body 210.
The structural function of the pressure control system is described below in connection with fig. 1.
As shown in fig. 1, the pressure control system is connected to the bottom of the support column 220 of the vacuum adsorption type heating device and is communicated with the adsorption hole 212 on the support body 210;
in this embodiment, the pressure control system includes a suction radix Aconiti lateralis system, a desorption radix Aconiti lateralis system, a cleaning subsystem, and a pressure regulating subsystem;
the adsorption subsystem is connected with the vacuum adsorption heating device in an on-off mode and is used for adsorbing the substrate;
the desorption monkshood system is connected with the adsorption subsystem in an on-off manner and is used for realizing desorption on the substrate, and is provided with a particle collector for collecting particles accumulated in the process;
the cleaning subsystem is connected with the adsorption subsystem and the desorption aconite system in an on-off manner and is used for cleaning the adsorption subsystem and the desorption aconite system;
the pressure regulating subsystem is connected with the substrate processing chamber 100, the adsorption subsystem, the desorption auxiliary system and the cleaning subsystem in an on-off mode and is used for regulating the air pressure in the substrate processing chamber 100.
The adsorption subsystem comprises a first adsorption pipeline 311a, a first adsorption pipeline 311b, a second adsorption pipeline 312, a third adsorption pipeline 313, a first valve 314 and a second valve 315;
the first adsorption pipeline 311a and the first adsorption pipeline 311b are respectively connected with 2 support columns of the vacuum adsorption heating device 200a and the vacuum adsorption heating device 200b, and after being combined, are connected with the first valve 314, the first valve 314 is connected with the second valve 315 through the second adsorption pipeline 312, and the second valve 315 is connected with the lower part of the throttle valve 345, which is close to the pump end 404, through the third adsorption pipeline 313.
Further, the first adsorption line 311a and the first adsorption line 311b are 2 equal-length gas lines.
The desorption monkshood system comprises a third valve 323, a particle collector 324, a first desorption line 321 and a second desorption line 322:
the first desorption line 321 leads from the second adsorption line 312 and is connected to a third valve 323;
the third valve 323 is connected to the upper end of the pressure regulating valve 344 via the second desorption line 322, and is close to the substrate processing chamber 100.
The particle collector 324 is connected to the second desorption line 322.
The cleaning subsystem includes a fourth valve 333, a first cleaning line 331, a second cleaning line 332:
the first cleaning line 331 leads from the second desorption line 322 between the particle collector 324 and the third valve 323 and is connected to a fourth valve 333;
the fourth valve 333 is connected via a second clean line 332 to the pump end 404 below the throttle valve 345.
After entering the particle collector 324 from the gas inlet 403, the cleaning gas is discharged from the fourth valve 333 to the pump end 404, while the cleaning gas is introduced from the vacuum adsorption hole 221, flows through the suction attachment system and is discharged to the pump end 404.
The gas inlets 401 are deposition gas and cleaning gas inlets, the gas inlets 402 are deposition gas and cleaning gas inlets, and the gas inlets 403 are cleaning gas inlets.
The pressure regulating subsystem comprises a throttle valve 345, a pressure regulating valve 344, a first regulating line 341, a second regulating line 342 and a third regulating line 343:
the pressure regulating valve 344 is connected to the substrate processing chamber 100 through a first regulating line 341 and connected to the throttle valve 345 through a second regulating line 342;
the throttle valve 345 is connected to the pump end 404 via a third control line 343.
FIG. 3 discloses a control flow diagram of a pressure control system for a deposition process according to an embodiment of the application, such as the deposition process shown in FIG. 3: the pressure within the substrate processing chamber 100 is controllable between 0.02-600 torr.
The control method of the pressure control system comprises the following steps:
step S101, placing a substrate;
the substrate is transferred to the substrate processing chamber 100 and placed on a vacuum adsorption type heating device;
step S102, adsorbing a substrate;
when the cavity pressure is 0.02-1torr, the first valve 314 and the second valve 315 of the pressure control system are opened, and the third valve 323 and the fourth valve 333 are closed;
at this time, the pressure control system is in a low pressure state, and then the substrate processing chamber 100 is controlled to be at 50-600torr, and the substrate is adsorbed onto the vacuum adsorption type heating device by the pressure difference;
step S102, desorbing a substrate;
the pressure of the substrate processing chamber 100 is controlled to 0.02-1torr, the second valve 315 and the fourth valve 333 are closed, the first valve 314 and the third valve 323 are opened, and at this time, the pressure balance of the substrate processing chamber 100 and the pressure control system eliminates the pressure difference, and the substrate is desorbed from the vacuum adsorption type heating apparatus.
FIG. 4 discloses a control flow chart of a pressure control system of a cleaning process according to an embodiment of the application, as shown in FIG. 4, the control method of the pressure control system of the cleaning process comprises:
step S201, cleaning an adsorption pipeline;
the first valve 314 and the second valve 315 are opened, the third valve 323 and the fourth valve 333 are closed, the cleaning gas enters the adsorption subsystem, the cleaning gas is introduced from the adsorption hole 212 of the vacuum adsorption heating device and is discharged to the pump end 404 to clean the adsorption pipeline;
step S202, cleaning a particle collector;
opening the fourth valve 333, closing the first valve 314, the second valve 315, and the third valve 323, introducing the cleaning gas into the particle collector 324, introducing the cleaning gas from the particle collector 324, and discharging the cleaning gas from the fourth valve 333 to the pump end 404;
step S203, cleaning a desorption pipeline;
the first valve 314 and the third valve 323 are opened, the second valve 315 and the fourth valve 333 are closed, the cleaning gas enters the desorption monkshood system, the cleaning gas is introduced from the adsorption hole 212 of the vacuum adsorption heating device and discharged to the pump end 404, and the desorption pipeline is cleaned.
Fig. 5 shows a schematic diagram of a simulation result of a disc surface pressure according to an embodiment of the present application, as shown in fig. 5, the first pressure curve 500 is a simulation curve of a disc surface pressure according to the prior art, the second pressure curve 600 is a simulation curve of a disc surface pressure according to an embodiment of the present application, the difference between the disc surface pressure values at the inner ring groove 701 and the outer ring groove 702 of the second pressure curve 600 is smaller, the consistency of the adsorption force is better, and the uniformity of processing the substrate is better.
The vacuum heating substrate equipment provided by the application has the following beneficial effects:
1) The problem of uniformity of a warp film at the edge of a deposited thick film is prevented from being poor due to lower adsorption force at the edge of a vacuum disc by improving the adsorption Kong Jiejue adsorption force problem of the inner ring and the outer ring of a supporting main body structure of the vacuum adsorption type heating device;
2) By improving the pressure control system, adding a particle collector and introducing clean gas, the problem that the pressure control system is frequently replaced due to particle accumulation and blockage is solved.
While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated that the methodologies are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and/or concurrently with other acts from that shown and described herein or not shown and described herein, as would be understood and appreciated by those skilled in the art.
As used in the specification and in the claims, the terms "a," "an," "the," and/or "the" are not specific to a singular, but may include a plurality, unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that the steps and elements are explicitly identified, and they do not constitute an exclusive list, as other steps or elements may be included in a method or apparatus.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
In the present application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be directly connected or indirectly connected through an intermediate medium, and can be internal to two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
The embodiments described above are intended to provide those skilled in the art with a full range of modifications and variations to the embodiments described above without departing from the inventive concept thereof, and therefore the scope of the application is not limited by the embodiments described above, but is to be accorded the broadest scope consistent with the innovative features recited in the claims.
Claims (14)
1. A vacuum heating substrate device, which is characterized by comprising a substrate processing chamber, a vacuum adsorption type heating device and a pressure control system;
the vacuum adsorption type heating device is arranged in the substrate processing chamber and is used for placing a substrate and heating the substrate;
the pressure control system is connected with the vacuum adsorption type heating device, the substrate processing chamber and the pump end in an on-off mode and used for controlling the pressure of the vacuum adsorption type heating device and the pressure of the substrate processing chamber;
wherein the pressure control system comprises a suction aconite system, a desorption aconite system, a cleaning subsystem and a pressure regulating subsystem;
the adsorption subsystem is connected with the vacuum adsorption heating device in an on-off mode and is used for adsorbing the substrate;
the desorption monkshood system is connected with the adsorption subsystem in an on-off manner and is used for realizing desorption on the substrate, and is provided with a particle collector for collecting particles accumulated in the process;
the cleaning subsystem is connected with the adsorption subsystem and the desorption aconite system in an on-off manner and is used for cleaning the adsorption subsystem and the desorption aconite system;
the pressure regulating subsystem is connected with the substrate processing chamber, the adsorption subsystem, the desorption monkshood system and the cleaning subsystem in an on-off mode and is used for regulating the air pressure in the substrate processing chamber.
2. The vacuum heating substrate apparatus according to claim 1, wherein the vacuum adsorption type heating device comprises a support body, a heater, and a support column:
the upper surface of the supporting main body is distributed with a plurality of annular grooves for placing the substrate;
the heaters are distributed in the support main body;
the support column is connected with the lower surface of the support main body.
3. The vacuum heating substrate apparatus according to claim 2, wherein the plurality of annular grooves of the support body are concentric annular grooves that do not intersect with each other;
at least 1 adsorption hole is arranged in each concentric annular groove and used for adsorbing a substrate;
the at least 1 adsorption hole penetrates through the support main body and the support column and then is connected with the pressure control system.
4. The vacuum heating substrate apparatus according to claim 2, wherein the circular ring-shaped groove has a width ranging from 0.5mm to 1mm and a depth ranging from 0.5mm to 1mm.
5. A vacuum heating substrate apparatus according to claim 3, wherein the suction holes have a diameter in the range of 0.5mm to 2mm.
6. The vacuum heating substrate apparatus according to claim 2, wherein an upper surface roughness of the support body ranges from 0.3 μm to 1 μm.
7. A vacuum heating substrate apparatus according to claim 3, wherein the pressure control system is connected to the bottom of the support column and is in communication with the suction holes in the support body.
8. The vacuum heating substrate apparatus according to claim 2, wherein the number of the vacuum adsorption heating devices is at least one;
the adsorption subsystem of the pressure control system comprises at least one first adsorption pipeline, a second adsorption pipeline, a third adsorption pipeline, a first valve and a second valve;
the number of the at least one first adsorption pipeline corresponds to the number of the vacuum adsorption heating devices;
one end of the first adsorption pipeline is connected with a support column of the vacuum adsorption heating device, the other end of the first adsorption pipeline is connected with the first valve after being converged, the first valve is connected with the second valve through the second adsorption pipeline, and the second valve is connected with the lower part of the throttle valve, which is close to the pump end, through the third adsorption pipeline.
9. The vacuum heating substrate apparatus of claim 8, wherein the desorption monkshood system comprises a third valve, a particle collector, a first desorption line, and a second desorption line:
the first desorption pipeline is led out from the second adsorption pipeline and is connected to a third valve;
the third valve is connected with the upper end of the pressure regulating valve through a second desorption pipeline;
the particle collector is connected with the second desorption pipeline.
10. The vacuum heating substrate apparatus of claim 9, wherein the cleaning subsystem comprises a fourth valve, a first cleaning line, and a second cleaning line:
the first cleaning pipeline is led out from the second desorption pipeline between the particle collector and the third valve and is connected to the fourth valve;
the fourth valve is connected with the lower part of the throttle valve close to the pump end through a second cleaning pipeline.
11. The vacuum heating substrate apparatus of claim 1, wherein the pressure regulating subsystem comprises a throttle valve, a pressure regulating valve, a first regulating line, a second regulating line, and a third regulating line:
the pressure regulating valve is connected with the substrate processing chamber through a first regulating pipeline and connected with the throttle valve through a second regulating pipeline;
the throttle valve is connected with the pump end through a third adjusting pipeline.
12. The vacuum heating substrate apparatus according to claim 10, wherein the first valve and the second valve are opened and the third valve and the fourth valve are closed during the substrate adsorption process or the adsorption line cleaning process.
13. The vacuum heating substrate apparatus according to claim 10, wherein the first valve and the third valve are opened and the second valve and the fourth valve are closed during a substrate desorption process or a desorption line cleaning process.
14. The vacuum heating substrate apparatus of claim 10, wherein the fourth valve is opened and the first, second and third valves are closed during particle collector cleaning.
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| CN202211164987.1A CN115354307B (en) | 2022-09-23 | 2022-09-23 | Vacuum heating substrate equipment |
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| CN115354307B true CN115354307B (en) | 2023-08-18 |
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|---|---|---|---|---|
| CN101358338A (en) * | 2007-07-30 | 2009-02-04 | 应用材料公司 | Vacuum chucking heater of axisymmetrical and uniform thermal profile |
| KR20210137631A (en) * | 2020-05-11 | 2021-11-18 | 주식회사 원익아이피에스 | Vacuum chuck, substrate processing apparatus having the same and method of manufacturing vacuum chuck |
| KR20220046921A (en) * | 2020-10-08 | 2022-04-15 | 주식회사 메카로 | pedestal heater block having asymmetric heater line structure |
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| CN115354307A (en) | 2022-11-18 |
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