KR20180004786A - METHOD AND APPARATUS FOR MANUFACTURING A LAYER STACK FOR DISPLAY MANUFACTURE - Google Patents

Abstract

A method and apparatus for fabricating a layer for a plurality of thin film transistors for display fabrication are described. The method includes depositing (101) a layer stack on a substrate by sputtering a first layer from an indium oxide containing target using a first set of processing parameters; Sputtering a second layer from the indium oxide containing target onto the first layer using a second set of processing parameters and a first set of processing parameters; And patterning (102) the layer stack by etching. The apparatus 200 includes a vacuum chamber 210; One or more indium oxide-containing targets 220a, 220b in a vacuum chamber for sputtering a transparent conductive oxide layer; A gas distribution system (230) for providing a processing gas within the vacuum chamber; And a controller 240 coupled to the gas distribution system 230 and configured to execute program code to perform the method.

Description

METHOD AND APPARATUS FOR MANUFACTURING A LAYER STACK FOR DISPLAY MANUFACTURE

[0001] The present disclosure relates to an apparatus and method for coating a substrate in a vacuum process chamber. In particular, this disclosure relates to an apparatus and method for forming at least one layer of a sputtered material on a substrate for display manufacture. In particular, embodiments relate to layer stacks for electronic devices and to apparatus and methods for fabricating transistors on a substrate.

[0002] In many applications, it is desirable to deposit thin layers on a substrate, for example, on a glass substrate. Typically, the substrates are coated in different chambers of the coating apparatus. In some applications, substrates are coated in a vacuum using a vapor deposition technique. Various methods for depositing material on a substrate are known. For example, the substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or a plasma enhanced chemical vapor deposition (PECVD) process, Typically, the process is performed in a process chamber or process apparatus in which the substrate to be coated is located.

[0003] Electronic devices, and in particular optoelectronic devices, have shown significant cost reduction over the last few years. Also, the pixel density continues to increase in displays. In the case of TFT displays, high density TFT integration is required. However, despite the increase in the number of thin-film transistors (TFTs) in the device, an attempt is made to increase the yield and try to reduce the manufacturing cost.

[0004] Thus, there continues to be a need to provide improved methods and devices for tuning TFT display characteristics during manufacture, especially for high quality and low cost.

[0005] In view of the above, a method and apparatus are provided for manufacturing a patterned layer stack for display fabrication, in accordance with the independent claims. Also provided is an electronic device comprising a patterned layer stack for an electronic device, and a patterned layer fabricated by a method of manufacturing a patterned layer stack, according to embodiments described herein. Additional advantages, features, aspects, and details are readily apparent from the dependent claims, the description, and the drawings.

[0006] According to one aspect of the present disclosure, a method of manufacturing a patterned layer stack for display fabrication is provided. The method includes depositing a layer stack on a substrate by sputtering a first layer from an indium oxide containing target using a first set of processing parameters; Sputtering a second layer from the indium oxide-containing target onto the first layer using a first set of processing parameters and a second set of processing parameters, the first set of processing parameters including a high etchability And a second set of processing parameters is adapted for a low resistance of the second layer stack; And patterning the layer stack by etching.

[0007] According to another aspect of the present disclosure, there is provided a patterned layer stack for an electronic device, produced by a method of manufacturing a patterned layer stack, in accordance with embodiments described herein.

[0008] According to yet another aspect of the present disclosure, there is provided an electronic device comprising a patterned layer stack fabricated by a method of manufacturing a patterned layer stack, in accordance with embodiments described herein.

[0009] According to yet another aspect of the present disclosure, an apparatus is provided for depositing a layer stack for display manufacture. The apparatus includes a vacuum chamber; One or more indium oxide containing targets in a vacuum chamber for sputtering a transparent conductive oxide layer; A gas distribution system for providing a processing gas within the vacuum chamber; An etching device for etching the layer stack; And a controller coupled to the gas distribution system and configured to execute the program code for performing the method of manufacturing the patterned layer stack for display manufacture according to the embodiments described herein.

[0010] In the manner in which the recited features of the present disclosure described herein may be understood in detail, a more particular description summarized above may be made by reference to embodiments. The accompanying drawings relate to embodiments of the present disclosure and are described below.
Figure 1 shows a schematic view of an apparatus for depositing a layer for display manufacture in accordance with embodiments described herein;
Figure 2 shows a schematic view of an apparatus for depositing a layer for display manufacture according to other embodiments described herein;
Figure 3 shows a block diagram illustrating a method of manufacturing a patterned layer stack for display manufacture in accordance with embodiments as described herein;
4A shows a schematic view of a layer stack prior to patterning in accordance with embodiments described herein;
4B shows a schematic view of a layer stack after patterning according to embodiments described herein.

[0011] Reference will now be made in detail to various embodiments of the present disclosure, and examples of one or more of the various embodiments are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like components. In the following, only differences for the individual embodiments are described. Each example is provided as an illustration of the present disclosure and is not meant as a limitation of the present disclosure. Further, the features illustrated or described as part of one embodiment may be used with other embodiments, or may be used for other embodiments, to create further embodiments. The detailed description is intended to cover such modifications and variations.

[0012] In the present disclosure, the expression "atmosphere of processing gas" can be understood as an atmosphere inside the processing chamber, especially inside the vacuum processing chamber of the apparatus for depositing the layer. The "processing gas atmosphere" may have a volume specified by the volume inside the processing chamber.

[0013] In the present disclosure, the abbreviation "H ₂ " means hydrogen, in particular gaseous hydrogen.

[0014] Also, in this disclosure, the abbreviation "O ₂ " means oxygen, especially gaseous oxygen.

[0015] In this disclosure, the expression "degree of amorphous structure" can be understood as a ratio of the amorphous structure to the non-amorphous structure in the solid state. The non-crystalline structure may be a crystalline structure. The amorphous structure may be a glass-like structure.

[0016] In this disclosure, the expression "sheet resistance" can be understood as the resistance of the layer produced by the method according to the embodiments described herein. In particular, "sheet resistance" may refer to the case where a layer is considered as a two-dimensional entity. It is understood that the expression "sheet resistance" means that the current follows the plane of the layer (i.e., the current is not perpendicular to the layer). The sheet resistance may also refer to the case of a resistivity to a uniform layer thickness.

[0017] In Figure 1, a schematic diagram of an apparatus 200 for depositing a layer stack for display fabrication in accordance with embodiments described herein is shown. According to embodiments as described herein, an apparatus for depositing a layer stack for display manufacture comprises a vacuum chamber 210; One or more indium oxide (especially indium tin oxide) -containing targets 220a, 220b in a vacuum chamber for sputtering a transparent conductive oxide layer (e.g., a first layer and / or a second layer); A gas distribution system (230) for providing a processing gas within the vacuum chamber; An etching device 280 for etching the layer stack; And a controller 240 coupled to the gas distribution system 230 and configured to execute the program code. Upon execution of the program code, a method of manufacturing a patterned layer stack for the manufacture of a display as described herein can be performed.

[0018] As illustrated in FIG. 1, according to embodiments that may be combined with other embodiments described herein, a vacuum chamber 210 is defined by chamber walls 211, To a gas distribution system 230 at a first gas inlet 231 for H ₂ and a second gas inlet 232 for H ₂ . 1, the first gas inlet 231 includes a first mass flow controller 234 configured to control the amount of water vapor provided to the processing gas atmosphere 222, such as a first mass flow controller 234, May be connected to the gas distribution system 230 through a first conduit having a valve. The second gas inlet 232 is connected to the gas distribution system 230 via a second mass flow controller 235 configured to control the amount of H ₂ provided in the processing gas atmosphere, e.g., a second conduit having a second valve Can be connected.

[0019] According to embodiments that may be combined with other embodiments described herein, the gas distribution system may include a first gas source for providing water vapor and a second gas source for providing H ₂ have. Thus, an apparatus as described herein may be configured to provide water vapor and H ₂ independently of each other, thereby allowing the vapor content of the processing gas atmosphere 222 in the vacuum chamber 210 and / or the vapor content of H ₂ The content can be controlled independently.

[0020] According to embodiments that may be combined with other embodiments described herein, the gas distribution system may include a third gas source for providing an inert gas. The third gas source, for example, the third gas source and through a separate gas inlet for connecting the vacuum chamber, the processing gas of an inert gas to separate from the steam and / or H ₂ for providing an inert gas to provide an inert gas Atmosphere. ≪ / RTI > According to embodiments that may be combined with other embodiments described herein, the gas distribution system may include an inert gas flow controller (not shown) configured to control the amount of inert gas provided in the processing gas atmosphere have. According to some embodiments that may be combined with other embodiments described herein, a third gas source for providing an inert gas may include an inert gas / water vapor mixture that may be provided in a processing gas atmosphere within the vacuum chamber Can be used. For example, an inert gas / water vapor mixture can be provided by mixing an inert gas from a third gas source with water vapor from a first gas source before the inert gas / water vapor mixture is provided to the processing gas atmosphere inside the vacuum chamber have. Additionally or alternatively, a third gas source for providing an inert gas may be provided, for example, through a second gas inlet, to provide an inert gas / H ₂ mixture that may be provided in a processing gas atmosphere within the vacuum chamber Lt; / RTI > Thus, the inert gas / H ₂ mixture can be formed by mixing the inert gas from the third gas source and the H ₂ from the second gas source before the inert gas / H ₂ mixture is provided to the processing gas atmosphere inside the vacuum chamber Can be provided.

[0021] According to embodiments that may be combined with other embodiments described herein, a first gas source of the gas distribution system 230 for providing water vapor to the processing gas atmosphere 222 of the vacuum chamber 210 An inert gas / steam mixture can be provided. The partial pressure of the inert gas in the inert gas / steam mixture may be selected in the range between the upper limit of the inert gas partial pressure and the lower limit of the inert gas partial pressure as specified herein. Thus, the partial pressure of water vapor in the inert gas / water vapor mixture can be selected in the range between the upper limit of the steam partial pressure and the lower limit of the steam partial pressure, as specified herein.

According to embodiments that may be combined with other embodiments described herein, a gas delivery system 230 for providing H ₂ to the processing gas atmosphere 222 of the vacuum chamber 210 second gas source has to be provided for the inert gas / H ₂ mixture. The partial pressure of the inert gas in the inert gas / H ₂ mixture may be selected from the lower limit of the inert gas partial pressure to the upper limit of the inert gas partial pressure as specified herein. Thus, the partial pressure of H ₂ in the inert gas / H ₂ mixture can be selected from the lower limit of H ₂ partial pressure to the upper limit of H ₂ partial pressure as specified herein.

[0023] 1, according to embodiments that may be combined with other embodiments described herein, the vacuum chamber 210 may include an outlet port 233 coupled to the outlet conduit, The port 233 is in fluid connection with a discharge pump 236 for providing a vacuum in the vacuum chamber 210.

[0024] As illustrated in Figure 1, an apparatus for depositing a layer stack for display fabrication in accordance with embodiments described herein includes an etch device 280 for etching a layer stack deposited on a substrate 300 . As illustrated diagrammatically in FIG. 1, the etching device 280 may be located outside of the vacuum chamber 210. For example, the etching device 280 may be connected to a vacuum chamber 210 in which deposition of a layer stack is performed through a vacuum lock chamber 290. For example, as shown in FIG. 1, a vacuum lock chamber 290 may be disposed on the side wall of the vacuum chamber 210. The vacuum lock chamber 290 may be configured to separate the processing gas atmosphere from the atmosphere inside the etching device 280. For example, the etching device may be configured as an etch chamber having an etch source 281. The etch source 281 may be configured for dry chemical or wet chemical etching. According to embodiments that may be combined with other embodiments described herein, a photoresist coating for structuring the layer stack through exposure to radiation may be applied prior to etching.

[0025] According to embodiments that may be combined with other embodiments described herein, an apparatus for depositing a layer stack for the manufacture of a display may include a vacuum chamber (not shown) in which deposition of a layer stack is performed through a vacuum lock chamber 290 210 to the etch device 280. The etch device 280 may be configured to transport the substrate into the etch device 280. [

As illustrated in FIG. 1, in the vacuum chamber 210, a first deposition source 223 a and a second deposition source 223 b may be provided. The deposition sources may be, for example, rotatable cathodes with targets of material to be deposited on the substrate. In particular, the target may be an ITO (indium tin oxide) -containing target, in particular an ITO 90/10 containing target. According to the embodiments described herein, ITO 90/10 contains indium oxide (In ₂ O ₃ ) and tin oxide (SnO ₂ ) in a ratio of In ₂ O ₃ : SnO ₂ = 90:10.

[0027] According to embodiments that may be combined with other embodiments described herein, the cathodes may be rotatable cathodes with magnet assemblies 221a, 221b inside the cathode. Thus, using the apparatus as described herein, magnetron sputtering can be performed to deposit the layer. The cathodes of the first deposition source 223a and the second deposition source 223b may be connected to the power supply 250 as illustrated in FIG. Depending on the nature of the deposition process, the cathodes may be connected to an alternating current (AC) power supply or a direct current (DC) power supply. For example, sputtering from an indium oxide target, for example, for a transparent conductive oxide film, can be performed as DC sputtering. In particular, the first layer and / or the second layer produced by the method as described herein may be sputtered in a DC mode from an indium oxide target. For DC sputtering, a first deposition source 223a may be coupled to a first DC power supply, and a second deposition source 223b may be coupled to a second DC power supply. Thus, in the case of DC sputtering, the first deposition source 223a and the second deposition source 223b may have separate DC power supplies. According to embodiments that may be combined with other embodiments described herein, DC sputtering may include pulsed-DC sputtering, particularly bipolar-pulsed-DC sputtering. Thus, the power supply may be configured to provide a pulsed-DC, especially a bipolar-pulsed-DC. In particular, the first DC power supply for the first deposition source 223a and the second DC power supply for the second deposition source 223b may be configured to provide pulsed-DC power, in particular to provide a positive-pulse-DC . In Figure 1, the horizontal arrangement of the substrate 300 and the deposition sources to be coated is shown. In some embodiments that may be combined with other embodiments disclosed herein, the vertical arrangement of the substrate 300 to be coated and the deposition sources may be used. Thus, in accordance with some embodiments that may be combined with other embodiments described herein, an etching device configured to etch a layer stack of vertical setups may be provided.

[0028] Illustratively, referring to FIG. 1, in accordance with embodiments that may be combined with other embodiments described herein, a vacuum chamber 210 (not shown) may be used to measure the composition of the processing gas atmosphere 222 A sensor 270 may be provided. In particular, the sensor 270 may be configured to measure the content of inert gas, H ₂ , O _2, and residual gas within the respective content ranges as specified herein.

1, according to embodiments that may be combined with other embodiments described herein, a sensor 270, a first mass flow controller 234, and a second mass flow controller (not shown) And a discharge pump 236 may be coupled to the controller 240. In one embodiment, The controller 240 can control the gas distribution system 230 including the first mass flow controller 234 and the second mass flow controller 235, the inert gas flow controller, and the outlet pump 236, , A processing atmosphere having a composition as described herein may be generated and maintained in the vacuum chamber 210. [ Thus, all of the constituents of the selected first processing gas atmosphere having the composition as described herein and all the constituents of the selected second processing gas atmosphere having the composition as described can be independently controlled from each other. In particular, the controller may be configured to control the flow of H _2, the flow of O ₂ , and the inertness of the first processing gas atmosphere to establish a second processing gas atmosphere with a first processing gas atmosphere and a selected composition as described herein with a selected composition as described herein And can be configured to control the gas distribution system such that the flow of gas can be controlled independently of each other. Thus, the composition of the selected processing gas atmosphere can be adjusted very precisely.

[0030] According to embodiments that may be combined with other embodiments described herein, the controller 240 may be coupled to the power supply 250. Alternatively, for example, in the case of DC sputtering, the controller may be connected to the first DC power supply and the second DC power supply. The controller may also be configured to control the first power source 223a and the second power source 223b to be supplied to the first deposition source 223a and the second deposition source 223b within a first power range as specified herein by the respective lower and upper limits for the first power As shown in FIG. Accordingly, the controller can determine the second power (i.e., the second power) to be supplied to the first deposition source 223a and the second deposition source 223b within a second power range as specified herein by the respective lower and upper limits for the second power As shown in FIG.

[0031] When an apparatus 200 for depositing a layer stack for manufacturing a display as described herein is used to perform a method of manufacturing a patterned layer stack, according to embodiments described herein, The substrate 300 may be disposed below the deposition sources, as exemplarily shown in FIG. The substrate 300 may be arranged on the substrate support 310. According to embodiments that may be combined with other embodiments described herein, a substrate support device for a substrate to be coated may be disposed in a vacuum chamber. For example, the substrate support device may include conveying rolls, magnet guidance systems, and additional features. The substrate support device may include a substrate drive system for driving the substrate to be coated into and out of the vacuum chamber 210. For example, the substrate drive system may be configured to transport the uncoated substrate into the vacuum chamber and transport the substrate coated with the layer stack as described herein, for example, from the vacuum chamber 210 into the etching device 280 have.

2, in accordance with embodiments that may be combined with other embodiments described herein, a vacuum chamber 210 may be provided in the third gas inlet 238 for O ₂ , And may be coupled to a distribution system 230. 2, the third gas inlet 238 is connected to a third mass flow controller 237 configured to control the amount of O ₂ provided to the processing gas atmosphere 222, for example, 3 conduit to the gas distribution system 230.

[0033] According to embodiments that may be combined with other embodiments described herein, the gas distribution system may include a fourth gas source for providing O ₂ . Hence, the apparatus as described herein can be configured to provide water vapor, H ₂ , and O ₂ independently of each other, thereby enabling the vapor content of the processing gas atmosphere 222 in the vacuum chamber 210 and / ₂ content and / or O ₂ content can be independently controlled.

According to embodiments that may be combined with other embodiments described herein, a gas delivery system 230 for providing O ₂ to the processing gas atmosphere 222 of the vacuum chamber 210 4 gas source may provide an inert gas / O ₂ mixture. The partial pressure of the inert gas in the inert gas / O ₂ mixture can be selected in the range between the upper limit of the inert gas partial pressure and the lower limit of the inert gas partial pressure as specified herein. Accordingly, the partial pressure of O ₂ in the inert gas / O ₂ mixture, may be selected from the range between the upper limit of the O ₂ partial pressure, as specified herein, and the lower limit of O ₂ partial pressure.

[0035] According to some embodiments that may be combined with other embodiments described herein, a third gas source for providing an inert gas may include an inert gas / gas mixture that may be provided in a processing gas atmosphere within the vacuum chamber, O can be used to provide a _second mixture. For example, an inert gas / O ₂ mixture can be formed by mixing an inert gas from a third gas source and O ₂ from a fourth gas source before the inert gas / O ₂ mixture is provided to the processing gas atmosphere inside the vacuum chamber Can be provided.

[0036] According to embodiments that may be combined with other embodiments described herein, the gas distribution system 230 may include pumps and / or compressors to provide the desired pressure of the processing gas atmosphere within the vacuum chamber . In particular, the gas distribution system, an inert gas, H _2, in accordance with the water vapor, and each of the partial pressure range as described by each of the partial pressure the upper and the partial pressure lower limit of the O ₂ specified herein, the partial pressure of an inert gas And / or compressors and / or compressors to provide a partial pressure of H ₂ and / or to provide partial pressure of steam and / or to provide a partial pressure of O ₂ .

[0037] 2, according to embodiments that may be combined with other embodiments described herein, a sensor 270, a first mass flow controller 234, a second mass flow controller 235, And a third mass flow controller 237, and an outlet pump 236 may be coupled to the controller 240. [ The controller 240 controls the gas distribution system 230 including the first mass flow controller 234, the second mass flow controller 235 and the third mass flow controller 237 and the outlet pump 236 So that a processing atmosphere having a composition as described herein can be created and maintained in the vacuum chamber 210. [

[0038] Thus, an apparatus according to embodiments described herein is configured to produce a layer stack for display manufacture by employing a method of manufacturing a layer stack according to embodiments described herein.

[0039] Figure 3 illustrates a block diagram illustrating a method of fabricating a patterned layer stack for display fabrication in accordance with embodiments as described herein. The method 100 includes depositing (101) a layer stack on a substrate by sputtering a first layer from an indium oxide containing target using a first set of processing parameters. The method also includes sputtering a second layer from the indium oxide containing target onto the first layer using a second set of processing parameters and a first set of processing parameters. According to embodiments described herein, a first set of processing parameters is adapted for high etchability of the layer stack, and a second set of processing parameters is adapted for a low resistance of the layer stack. Also, according to embodiments described herein, the method includes patterning (102) the layer stack by etching, e.g., by chemical etching, in particular by wet chemical etching.

[0040] According to the embodiments described herein, the expression "the first set of processing parameters is adapted to the high etchability of the layer stack" means that a first set of processing parameters is defined by the first set of processing parameters It can be understood that the molecular structure of the sputtered first layer under sputter conditions is adapted to be adapted for etching, e.g., chemical etching, especially wet chemical etching. For example, the first set of processing parameters may be such that the molecular structure of the first layer sputtered under the sputter conditions specified by the first set of processing parameters has a degree of amorphous structure of a lower to upper limit as specified herein , ≪ / RTI >

[0041] According to the embodiments described herein, the expression "the first set of processing parameters is adapted to the high etchability of the layer stack" means that the first set of processing parameters is the etchability of the first layer of the layer stack , Better than the etchability of the second layer of the sputtered layer stack under the sputter conditions specified by the second set of processing parameters. For example, the first set of processing parameters may be adapted such that the degree of amorphous structure in the first layer is higher than the degree of amorphous structure in the second layer. Thus, the etchability of the first layer can affect the etchability of the layer stack.

[0042] According to the embodiments described herein, the expression "the second set of processing parameters is adapted to the low resistance of the layer stack" means that the second set of processing parameters is specified by the second set of processing parameters The second layer of the sputtered layer stack under sputter conditions has a lower limit of 100 占 m m 占, m, particularly a lower limit of 125 占 m m 占, m, more particularly an upper limit of 150 占 m hm cm to an upper limit of 200 占 m hm cm, in particular an upper limit of 250 占 m hm cm, Of the resistivity of the substrate. Thus, the sheet resistance of the second layer can affect the sheet resistance of the layer stack.

[0043] According to embodiments that may be combined with other embodiments described herein, depositing a layer stack on a substrate by sputtering from an indium oxide containing target 101 may include depositing indium tin oxide (ITO) Sputtering from a target, especially an ITO 90/10 containing target. According to the embodiments described herein, ITO 90/10 contains indium oxide (In ₂ O ₃ ) and tin oxide (SnO ₂ ) in a ratio of In ₂ O ₃ : SnO ₂ = 90:10. According to embodiments that may be combined with other embodiments described herein, step 101 of depositing a layer stack on a substrate may be performed at room temperature.

[0044] According to embodiments that may be combined with other embodiments described herein, a first set of processing parameters may include: a H ₂ - content provided in a first processing gas atmosphere; The amount of water vapor provided to the first processing gas atmosphere; An O ₂ - content provided in the first processing gas atmosphere; A first total pressure of the first processing gas atmosphere; And a first power supplied to the indium oxide containing target. According to embodiments that may be combined with other embodiments described herein, the step of depositing the first layer may be performed at room temperature.

[0045] According to embodiments that may be combined with other embodiments described herein, the content of H ₂ in the first processing gas atmosphere may range from a lower limit of 2.2%, particularly a lower limit of 4.2%, more particularly 6.1% The upper limit of the lower limit to 10%, particularly the upper limit of 15.0%, more particularly the upper limit of 20.0%. It should be understood that for the lower limits of H _2, the lower explosion limit for H ₂ is 4.1% and the lower inertization limit is 6.0%. The content of H ₂ in the first processing gas atmosphere is increased from the indium oxide containing target in a first processing gas atmosphere selected from a lower limit to an upper limit as described herein to the first layer of the layer stack, By sputtering the layer, the etchability of the layer stack can be adjusted. In particular, the etchability of the layer stack depends on the degree of amorphous structure of the layer stack, which can be controlled, for example, by the content of H ₂ in the first processing gas atmosphere. In particular, by increasing the content of H ₂ in the first processing gas atmosphere, the degree of amorphous structure in the first layer of the layer stack can be increased. Thus, the etchability of the layer stack can be improved.

[0046] According to embodiments that may be combined with other embodiments described herein, the content of water vapor in the first processing gas atmosphere may be lowered to a lower limit of 0.0%, particularly a lower limit of 2.0%, more particularly a lower limit of 4.0% to 6.0% , In particular an upper limit of 8.0%, more particularly an upper limit of 10.0%. The content of water vapor in the first processing gas atmosphere is increased from the indium oxide containing target in a first processing gas atmosphere selected from a lower limit to an upper limit range as described herein for the first layer of the layer stack, By sputtering the oxide layer, the etchability of the layer stack can be adjusted. In particular, the etchability of the layer stack depends on the degree of amorphous structure of the layer stack, which can be controlled, for example, by the content of water vapor in the first processing gas atmosphere. In particular, by increasing the content of water vapor in the first processing gas atmosphere, the degree of amorphous structure of the first layer of the layer stack can be increased. Thus, the etchability of the layer stack can be improved.

[0047] According to embodiments that may be combined with other embodiments described herein, the ratio of water vapor to H ₂ may range from a lower limit of 1: 1, particularly a lower limit of 1: 1.25, more particularly a lower limit of 1: The upper limit of 1: 2, especially the upper limit of 1: 3, more particularly the upper limit of 1: 4. By sputtering a transparent conductive oxide layer from an indium oxide containing target in a processing gas atmosphere in which the ratio of water vapor to H ₂ content in the processing gas atmosphere is in the range of from a lower limit to an upper limit as described herein, The control over the degree is improved. Thus, the degree of amorphous structure can be controlled more precisely, for example, compared to the case where the degree of amorphous structure in the oxide layer can be controlled only by water vapor.

[0048] According to some embodiments that may be combined with other embodiments described herein, the content of O ₂ in the first processing gas atmosphere may range from a lower limit of 0.5%, in particular a lower limit of 1.0% To an upper limit of 3.0%, in particular an upper limit of 4.0%, more particularly an upper limit of 15.0%.

[0049] According to embodiments that may be combined with other embodiments described herein, all of the component gases in the first processing gas atmosphere may be mixed prior to filling the vacuum chamber with the first processing gas atmosphere have. Thus, during the deposition of the first layer in the first processing gas atmosphere, all of the constituent gases in the first processing gas atmosphere can flow through the same gas showerers. In particular, according to the first composition selected in the processing gas atmosphere as described herein, H _2, water vapor, O _2, and an inert gas may be supplied to the vacuum chamber through the same gas shower. For example, the gaseous components of the selected first processing gas atmosphere may be mixed in the mixing unit before the gaseous components of the selected first processing gas are provided in the vacuum chamber through the gas showerheads. Thus, in accordance with some embodiments that may be combined with other embodiments described herein, an apparatus for depositing a layer stack may be provided wherein the gaseous components of a selected first processing gas are provided in a vacuum chamber through gas showerheads Before mixing the gaseous components of the selected first processing gas. Thus, a very homogeneous first processing gas atmosphere can be established in the vacuum chamber.

Thus, by sputtering the first layer of the layer stack from an indium-containing target in a processing gas atmosphere having a water vapor content and / or an H ₂ content as described herein, the formation of a crystalline ITO phase is suppressed . With this in mind, in the case of subsequent patterning of the sputtered oxide layer, for example by chemical etching, a reduction of the crystalline ITO residues on the oxide layer can be achieved. Thus, the quality of the patterned oxide layer employed for TFT display fabrication can be increased. In addition, by providing a processing gas atmosphere having a water vapor content and an H ₂ content as described herein, the risk of flammability and explosion of H ₂ in the processing gas atmosphere can be reduced or even eliminated.

[0051] According to embodiments that may be combined with other embodiments described herein, the first total pressure of the first processing gas atmosphere may be lower than the lower limit of 0.2 Pa, in particular lower than 0.3 Pa, more particularly lower limit of 0.4 Pa to 0.6 Pa In particular an upper limit of 0.7 Pa, more particularly an upper limit of 0.8 Pa. In particular, the total pressure of the first processing gas atmosphere may be 0.3 Pa. The etchability of the layer stack can be adjusted by sputtering a first layer of the layer stack from an indium oxide containing target in a processing gas atmosphere selected from a lower limit to an upper limit as described herein. In particular, the etchability of the layer stack depends on the degree of amorphous structure of the layer stack, which can be controlled, for example, by the total pressure in the first processing gas atmosphere. In particular, by increasing the total pressure of the first processing gas atmosphere, the degree of amorphous structure in the first layer of the layer stack can be increased. Thus, the etchability of the layer stack can be improved.

[0052] According to embodiments which may be combined with other embodiments described herein, the first power supplied to the indium oxide containing target may be a lower limit of 1 kW, in particular a lower limit of 2 kW, more particularly a lower limit of 4 kW to an upper limit of 5 kW, An upper limit of 10 kW, more particularly an upper limit of 15 kW. For example, when using an 8.5th generation target with a target length of 2.7m, the target may be provided with power in the range of 0.4kW / m to 5.6kW / m. Thus, it should be understood that the respective lower and upper limits of the first power supplied to the target may be normalized with respect to the length of the target. The degree of amorphous structure of the oxide layer can be adjusted by sputtering the first layer of the layer stack from the indium oxide containing target with the first power selected in the range of the lower limit to the upper limit as described herein. In particular, by reducing the first power supplied to the indium oxide containing target, the degree of amorphous structure of the first layer of the layer stack can be increased.

[0053] According to embodiments that may be combined with other embodiments described herein, a second set of processing parameters may include: a H ₂ - content provided in a second processing gas atmosphere; The amount of water vapor provided to the second processing gas atmosphere; The O ₂ - content provided in the second processing gas atmosphere; A second total pressure of the second processing gas atmosphere; And a second power supplied to the indium oxide containing target. According to embodiments that may be combined with other embodiments described herein, the step of depositing the second layer may be performed at room temperature.

[0054] According to some embodiments that may be combined with other embodiments described herein, the content of O ₂ in the second processing gas atmosphere may range from a lower limit of 0.5%, in particular a lower limit of 1.0%, more particularly 1.5% To an upper limit of 3.0%, in particular an upper limit of 4.0%, more particularly an upper limit of 15.0%. By sputtering the second layer of the layer stack from the indium oxide containing target in a second processing gas atmosphere selected in the range of the lower limit to the upper limit as described herein, the content of O _{2 in} the processing gas atmosphere is reduced by the sheet resistance Can be adjusted and optimized for low resistance. In particular, in order to optimize sheet resistance for low resistance, the content of O ₂ should be selected in the range between the lower threshold and the upper threshold. For example, when the content of O ₂ is less than the lower threshold value or exceeds the upper threshold value, relatively high values can be obtained for the sheet resistance. Thus, embodiments such as those described herein provide for adjusting and optimizing the sheet resistance of the oxide layer stacks for low resistance.

[0055] According to embodiments that may be combined with other embodiments described herein, the content of H ₂ in the second processing gas atmosphere may be lowered to a lower limit of 2.2%, particularly a lower limit of 5.0%, more particularly 7.0% The upper limit of the lower limit to 10%, particularly the upper limit of 15.0%, more particularly the upper limit of 20.0%.

[0056] According to embodiments that may be combined with other embodiments described herein, the content of water vapor in the second processing gas atmosphere may be lowered to a lower limit of 0.0%, particularly a lower limit of 2.0%, more particularly a lower limit of 4.0% to 6.0% , In particular an upper limit of 8.0%, more particularly an upper limit of 10.0%.

[0057] 2 according to the processing gas atmosphere to the embodiments, described herein, containing water vapor, H _2, inert gas, and O _2, water vapor, H _2, each of the content of the inert gas, and O ₂ are It should be appreciated that up to 100% of the processing gas atmosphere may be added.

[0058] According to embodiments that may be combined with other embodiments described herein, all of the constituent gases of the second processing gas atmosphere may be mixed prior to filling the vacuum chamber with the second processing gas atmosphere have. Thus, during the deposition of the second layer in the second processing gas atmosphere, all constituent gases in the second processing gas atmosphere can flow through the same gas showerheads. In particular, the composition according to claim 2 selected in the processing gas atmosphere as described herein, H _2, water vapor, O _2, and an inert gas may be supplied to the vacuum chamber through the same gas shower. For example, the gaseous components of the selected second processing gas atmosphere may be mixed in the mixing unit before the gaseous components of the selected second processing gas are provided in the vacuum chamber through the gas showerheads. Thus, in accordance with some embodiments that may be combined with other embodiments described herein, an apparatus for depositing a layer stack may be provided wherein the gaseous components of a selected second processing gas are provided in a vacuum chamber through gas showerheads A mixing unit for mixing the gaseous components of the selected second processing gas. Thus, a highly homogeneous second processing gas atmosphere can be established in the vacuum chamber.

[0059] According to embodiments that may be combined with other embodiments described herein, the second total pressure of the second processing gas atmosphere may be lower than the first total pressure of the first processing gas atmosphere. The second total pressure of the second processing gas atmosphere can range from a lower limit of 0.2 Pa, in particular a lower limit of 0.3 Pa, more particularly a lower limit of 0.4 Pa to an upper limit of 0.6 Pa, in particular an upper limit of 0.7 Pa, have. In particular, the total pressure of the second processing gas atmosphere may be 0.3 Pa. By sputtering a second layer of a layer stack from an indium oxide containing target in a processing gas atmosphere selected such that the second total pressure of the second processing gas atmosphere is lower than the first total pressure of the first processing gas atmosphere, crystallinity can be adjusted. In particular, the crystallinity of the layer stack can be controlled, for example, by a second total pressure in a second processing gas atmosphere. In particular, by reducing the second total pressure of the second processing gas atmosphere, the degree of crystallinity in the second layer of the layer stack can be increased.

[0060] According to embodiments that may be combined with other embodiments described herein, a second power supplied to the indium oxide containing target for sputtering the second layer is supplied to the indium oxide containing target for sputtering the first layer Lt; RTI ID = 0.0 > 1 < / RTI > The second power supplied to the indium oxide containing target may range from a lower limit of 5 kW, in particular a lower limit of 8 kW, more particularly a lower limit of 10 kW to an upper limit of 13 kW, in particular an upper limit of 16 kW, more particularly an upper limit of 20 kW. For example, when using an 8.5th generation target with a target length of 2.7m, a power in the range of 1.9kW / m to 7.4kW / m can be provided to the target. Thus, it should be appreciated that the respective lower and upper limits of the second power supplied to the target may be normalized to the length of the target. The crystallinity of the layer stack can be adjusted by sputtering a second layer of the layer stack from an indium oxide containing target with a second power selected from a lower limit to an upper limit as described herein. In particular, the crystallinity of the layer stack can be controlled, for example, by a second power supplied to the indium oxide containing target. In particular, by increasing the second power supplied to the indium oxide containing target, the degree of crystallinity of the second layer of the layer stack can be increased.

[0061] According to the embodiments that may be combined with other embodiments described herein, the first processing gas atmosphere containing water vapor, H _2, O _2, and an inert gas. It should be understood that the contents of the components of the first processing gas atmosphere according to the embodiments described herein may be added up to 100%. In particular, according to some embodiments that can be combined with other embodiments described herein, the content of water vapor, H _2, O _2, and an inert gas may be added to the first 100% of the processing gas atmosphere. The inert gas may be selected from the group consisting of helium, neon, argon, krypton, xenon, or radon. In particular, the inert gas may be argon (Ar).

[0062] According to embodiments that may be combined with other embodiments described herein, the partial pressure of water vapor in the first processing gas atmosphere may be, for example, 0.0% for the first processing gas atmosphere or the second processing gas atmosphere A range between the lower limit of 0.0Pa when the lower limit of the water vapor content is selected and an upper limit of 0.08Pa when the upper limit of the steam content of 10.0% is selected for the first processing gas atmosphere having an upper limit of the total pressure of, for example, 0.8Pa Lt; / RTI >

[0063] Thus, it is understood that the partial pressure of water vapor in the processing gas atmosphere can be calculated by multiplying the selected water vapor content in units of percentage [%] of the processing gas atmosphere times the selected total pressure in Pascal [Pa] units of the processing gas atmosphere Will be. Thus, depending on the selected values of the upper and lower limits of the water vapor content in the processing gas atmosphere and the selected values of the upper and lower limits of the total pressure of the processing gas atmosphere, a corresponding response to the lower and upper limits of the partial pressure of steam in the processing gas atmosphere Can be calculated and selected.

[0064] According to embodiments that may be combined with other embodiments described herein, the partial pressure of H ₂ in the first processing gas atmosphere may be less than the partial pressure of H ₂ in the first processing gas having a lower limit of, for example, An upper limit of H ₂ content of 20.0% was selected for a first processing gas atmosphere having a lower limit of 0.0044 Pa and a total pressure of, for example, 0.8 Pa when a lower limit of 2.2% H ₂ content was selected for the gas atmosphere Lt; RTI ID = 0.0 > 0.16Pa. ≪ / RTI >

[0065] Thus, the partial pressure of H _{2 in} the processing gas atmosphere is calculated by multiplying the selected H ₂ content in units of percentage [%] of the processing gas atmosphere by the selected total pressure in Pascal [Pa] units of the processing gas atmosphere Lt; / RTI > Thus, depending on the selected values of the upper and lower limits of the H ₂ content in the processing gas atmosphere and the selected values of the upper and lower limits of the total pressure of the processing gas atmosphere, the lower and upper limits of the partial pressure of H ₂ in the processing gas atmosphere Corresponding values for < / RTI >

[0066] According to the embodiments that may be combined with other embodiments described herein, the second processing gas atmosphere containing water vapor, H _2, O _2, and an inert gas. It should be understood that the contents of the components of the second processing gas atmosphere in accordance with the embodiments described herein can be added up to 100%. In particular, according to some embodiments that may be combined with other embodiments described herein, the content of water vapor, H ₂ , O ₂ , and inert gas may be added up to 100% of the second processing gas atmosphere. The inert gas may be selected from the group consisting of helium, neon, argon, krypton, xenon, or radon. In particular, the inert gas may be argon (Ar). The partial pressures and contents of water vapor and H ₂ in the second processing gas atmosphere can be selected within the ranges specified herein by the respective upper and lower limits for the first processing gas atmosphere.

[0067] According to embodiments that may be combined with other embodiments described herein, the partial pressure of O ₂ in the processing gas atmosphere may be, for example, about a processing gas atmosphere having a lower total pressure of 0.2 Pa An upper limit of 0.12 Pa when an upper limit of 15% O ₂ content is selected for a lower limit of 0.001 Pa when a lower limit of 0.5% O ₂ content is selected and a processing gas atmosphere with an upper limit of a total pressure of, for example, Lt; / RTI >

Thus, the partial pressure of O _{2 in} the processing gas atmosphere is calculated by multiplying the selected O ₂ content in units of percentage [%] of the processing gas atmosphere by the selected total pressure in Pascal [Pa] units of the processing gas atmosphere Lt; / RTI > Thus, depending on the selected values of the upper and lower limits of the O ₂ content in the processing gas atmosphere and the selected values of the upper and lower limits of the total pressure of the processing gas atmosphere, the lower and upper limits of the partial pressure of O ₂ in the processing gas atmosphere Corresponding values for < / RTI >

[0069] According to embodiments that may be combined with other embodiments described herein, the content of inert gas in the first processing gas atmosphere and / or the second processing gas atmosphere may be lowered to a lower limit of 55%, particularly 73% More particularly a lower limit of 81% to an upper limit of 87.5%, in particular an upper limit of 92.0%, more particularly an upper limit of 97.3%. The quality of the transparent conductive oxide layer is ensured by sputtering the transparent conductive oxide layer from the indium oxide containing target in the processing gas atmosphere selected in the range of the lower limit to the upper limit as described herein . In particular, by providing an inert gas to the processing gas atmosphere as described herein, the risk of flammability and explosion of H ₂ in the processing gas atmosphere can be reduced or even eliminated.

[0070] According to embodiments that may be combined with other embodiments described herein, the partial pressure of the inert gas in the first processing gas atmosphere and / or the second processing gas atmosphere may be, for example, a total of 0.2 Pa The upper limit of an inert gas content of 55%, the upper limit of the water vapor content of 10%, the upper limit of the H ₂ content of 20%, and the upper limit of the O ₂ content of 15.0% are selected for a processing gas atmosphere having a lower limit of pressure, An upper limit of the inert gas content of 97.3%, a lower limit of 0.0% of the steam content, a lower limit of the H ₂ content of 2.2%, and a lower limit of the gas content of 0.5% for a processing gas atmosphere having a lower limit of Pa and a total pressure of 0.8 Pa, the lower limit of the O ₂ content can range between the upper limit 0.7784Pa the selected case.

[0071] Thus, the partial pressure of the inert gas in the processing gas atmosphere can be calculated by multiplying the selected inert gas content in units of percentage [%] of the processing gas atmosphere by the selected total pressure in Pascal [Pa] units of the processing gas atmosphere It will be understood. Thus, depending on selected values of the upper and lower limits of the inert gas content in the processing gas atmosphere, and selected values of the upper and lower limits of the total pressure of the processing gas atmosphere, the lower and upper limits of the partial pressure of the inert gas in the processing gas atmosphere Corresponding values for < / RTI >

[0072] According to embodiments that may be combined with other embodiments described herein, to control the etchability of a layer stack, for example, by controlling the degree of amorphous structure of the first layer, By controlling the content of H ₂ and / or the content of water vapor in the processing gas atmosphere, the first processing atmosphere can be selected and controlled. In particular, by increasing the content of H ₂ and / or the content of water vapor in the first processing gas atmosphere, the degree of amorphous structure in the first layer can be increased. In particular, by increasing the content of H ₂ in the first processing gas atmosphere, the number of crystalline grains, particularly at the interface between the substrate and the first layer, can be reduced. According to embodiments that may be combined with other embodiments described herein, the etchability of the layer stack may be improved only by controlling the content of H ₂ in the first processing gas atmosphere. This may be beneficial for the adjustment of the resistivity of the layer stack properties, especially since water vapor can also affect the resistivity in addition to the etchability of the layer stack.

[0073] In accordance with embodiments that may be combined with other embodiments described herein, one or more of the following may be used to control the sheet resistance 104 of the layer stack, for example, during deposition of the second layer By controlling the content of O ₂ , a second processing atmosphere can be selected and controlled. In particular, to optimize the sheet resistance of the layer stack for low resistance after annealing, the content of O ₂ in the second processing gas atmosphere during layer deposition should be selected in the range between the lower and upper limits as described herein. According to embodiments, an anneal procedure after layer deposition may be performed, for example, in a temperature range of 200 ° C to 250 ° C.

[0074]  According to embodiments that may be combined with the other embodiments described herein, the resistivity after annealing of the layer stack may be lowered to a lower limit of 100 占 m mcm, in particular a lower limit of 120 占 m mcm, more particularly a lower limit of 150 占 m mcm to an upper limit of 250 占 m mcm, In particular an upper limit of 275 mu Ohm cm, more particularly an upper limit of 300 mu Ohm cm. In particular, the resistivity after annealing of the layer stack may be approximately 230 [mu] om < 2 > cm. According to embodiments that may be combined with other embodiments described herein, the resistivity of the layer stack may be determined by the second layer.

According to the [0075] embodiments that may be combined with other embodiments described herein, the first processing gas atmosphere may be comprised of water vapor, H _2, inert gases, and the residual gas. The content of water vapor, H ₂ , inert gas, and residual gas in the first processing gas atmosphere consisting of water vapor, H ₂ , inert gas, and residual gas is selected from each lower limit to each upper limit as described herein .

According to the [0076] embodiments that may be combined with other embodiments described herein, the second processing gas atmosphere may be comprised of water vapor, H _2, an inert gas, O _2, and the residual gas. Water vapor, H _2, an inert gas, O _2, and a residual gas of water vapor in the second processing gas atmosphere consisting, H _2, inert gas, and the amount of O ₂ are each a lower limit to the respective upper limit as described herein ≪ / RTI >

[0077] According to embodiments that may be combined with other embodiments described herein, the residual gas may be any impurity or any contaminant of the first processing gas atmosphere or the second processing gas atmosphere. According to embodiments that may be combined with other embodiments described herein, the residual gas content may be 0.0% to 1.0% of the respective processing gas atmosphere. In particular, the content of residual gas may be 0.0% of the respective processing gas atmosphere. It should be understood that the contents of the components of the processing gas atmosphere in accordance with the embodiments described herein can be added up to 100%.

[0078] For example, by employing a method of fabricating a patterned layer stack in accordance with embodiments described herein using an apparatus according to embodiments described herein, a patterned layer, as exemplarily shown in FIG. 4B, A stack 334 can be fabricated. In FIG. 4A, a layer stack 333 is shown prior to patterning, particularly before patterning by etching. According to embodiments of the patterned layer stack 334 fabricated by the method according to the embodiments described herein, the layer stack may include a first layer 311 and a second layer 312. The first layer 311 may be deposited directly over the substrate 300. The second layer 312 may be deposited directly over the first layer 312, as illustrated by way of example in FIG. 4A.

[0079] According to embodiments which may be combined with other embodiments described herein, the first layer may have a lower limit of 10 nm, particularly a lower limit of 15 nm, more particularly a lower limit of 20 nm to an upper limit of 30 nm, in particular an upper limit of 40 nm, Lt; RTI ID = 0.0 > (T1) < / RTI >

[0080] According to embodiments that may be combined with the other embodiments described herein, the second layer has a lower limit of 30 nm, in particular a lower limit of 40 nm, more particularly a lower limit of 50 nm to an upper limit of 70 nm, in particular an upper limit of 85 nm, (T2) in the range of the upper limit of < / RTI >

[0081] As illustrated illustratively in FIG. 4B, the patterned layer stack 334 according to embodiments described herein may include cavities 330 that are spaced regularly. The cavities can be created by chemical etching, in particular by using wet chemical etching. According to embodiments that may be combined with other embodiments described herein, a photoresist coating for structuring the layer stack through exposure to radiation may be applied prior to etching. In addition, the cavities may have a depth corresponding to the sum of the first thickness (T1) of the first layer and the second thickness (T2) of the second layer.

[0082] According to embodiments described herein, a layer stack fabricated by a method of fabricating a layer stack according to embodiments described herein may be employed in an electronic device, in particular, in a photo-electronic device. Thus, by providing the electronic device with a layer stack according to the embodiments described herein, the quality of the electronic device can be improved. In particular, it will be understood by those skilled in the art that a method and apparatus for fabricating a layer stack for the manufacture of displays in accordance with embodiments described herein provide for high quality and low cost TFT display fabrication.

Claims (15)

A method (100) for fabricating a patterned layer stack for display fabrication,
Depositing (101) a layer stack on a substrate by sputtering a first layer from an indium oxide containing target using a first set of processing parameters;
Sputtering a second layer from the indium oxide-containing target onto the first layer using a second set of processing parameters different from the first set of processing parameters, the first set of processing parameters comprising a high set of processing parameters, Wherein the second set of processing parameters is adapted for low resistance of the layer stack; And
And patterning (102) the layer stack by etching.
A method for fabricating a patterned layer stack for display fabrication. The method according to claim 1,
Wherein the first set of processing parameters comprises:
- the H ₂ - content provided in the first processing gas atmosphere;
The amount of water vapor provided to said first processing gas atmosphere;
- the O ₂ - content provided in the first processing gas atmosphere;
A first total pressure of the first processing gas atmosphere; And
- the first power supplied to the indium oxide containing target
≪ / RTI > comprising at least one first parameter selected from the group consisting of:
A method for fabricating a patterned layer stack for display fabrication. 3. The method of claim 2,
Wherein the H ₂ - content provided in the first processing gas atmosphere is 2.2% to 20.0%
A method for fabricating a patterned layer stack for display fabrication. The method according to claim 2 or 3,
Wherein the content of water vapor provided in the first processing gas atmosphere is 0.0% to 10%
A method for fabricating a patterned layer stack for display fabrication. 5. The method according to any one of claims 2 to 4,
Wherein the first total pressure of the first processing gas atmosphere is between 0.2 Pa and 0.8 Pa,
A method for fabricating a patterned layer stack for display fabrication. 6. The method according to any one of claims 2 to 5,
Wherein the first power supplied to the indium oxide containing target is 0.4 kW / m to 5.6 kW / m,
A method for fabricating a patterned layer stack for display fabrication. 7. The method according to any one of claims 1 to 6,
A second set of processing parameters,
- the H ₂ - content provided in the second processing gas atmosphere;
The amount of water vapor provided to the second processing gas atmosphere;
An O ₂ - content provided in the second processing gas atmosphere;
A second total pressure of the second processing gas atmosphere; And
- a second power supplied to the indium oxide containing target
≪ / RTI > and at least one second parameter selected from the group consisting of:
A method for fabricating a patterned layer stack for display fabrication. 8. The method of claim 7,
Wherein the O ₂ - content provided in the second processing gas atmosphere is 0.5% to 15.0%
A method for fabricating a patterned layer stack for display fabrication. 9. The method according to claim 7 or 8,
Wherein the second total pressure of the second processing gas atmosphere is between about 0.2 Pa and about 0.8 Pa.
A method for fabricating a patterned layer stack for display fabrication. 10. The method according to any one of claims 7 to 9,
Wherein the second power supplied to the indium oxide containing target is 1.9 kW / m to 7.4 kW / m,
A method for fabricating a patterned layer stack for display fabrication. 11. The method according to any one of claims 1 to 10,
Wherein the first layer has a thickness of 10 nm to 50 nm and the second layer has a thickness of 30 nm to 150 nm,
A method for fabricating a patterned layer stack for display fabrication. The method according to claim 1,
The target is an ITO (indium tin oxide), particularly ITO 90/10 containing target,
Wherein the first set of processing parameters comprises:
The H ₂ content provided in the first processing gas atmosphere; the H ₂ - content provided in the first processing gas atmosphere is between 2.2% and 20.0%;
The content of water vapor provided in the first processing gas atmosphere; the content of water vapor is between 0.0% and 10%;
- the O ₂ content provided in the second processing gas atmosphere; - the O ₂ - content provided in the first processing gas atmosphere is between 0.5% and 15.0%;
- a first total pressure of the first processing gas atmosphere - a first total pressure of the first processing gas atmosphere of 0.2Pa to 0.8Pa; And
- a first power supplied to said indium oxide containing target, - a first power supplied to said indium oxide containing target is between 0.4 kW / m and 5.6 kW / m,
At least one first parameter selected from the group consisting of < RTI ID = 0.0 >
A second set of processing parameters,
The H ₂ content provided in the _second processing gas atmosphere; the H ₂ - content provided in the first processing gas atmosphere is between 2.2% and 20.0%;
The content of water vapor provided in the second processing gas atmosphere; the content of water vapor is between 0.0% and 10%;
- the O ₂ content provided in the second processing gas atmosphere; - the O ₂ - content provided in the first processing gas atmosphere is between 0.5% and 15.0%;
A second total pressure of the second processing gas atmosphere, and a total pressure of the second processing gas atmosphere of 0.2 Pa to 0.8 Pa; And
The second power supplied to the indium oxide containing target, the second power supplied to the indium oxide containing target is from 1.9 kW / m to 7.4 kW / m,
At least one parameter selected from the group consisting of < RTI ID = 0.0 >
Wherein the first layer has a thickness of 20 nm to 50 nm and the second layer has a thickness of 30 nm to 150 nm,
A method for fabricating a patterned layer stack for display fabrication. A patterned layer stack (334) for an electronic device, manufactured by a method (100) according to any one of the preceding claims. An electronic device comprising a patterned layer stack (334) according to claim 13. An apparatus (200) for depositing a layer stack for display manufacture,
A vacuum chamber 210;
One or more indium oxide containing targets (220a, 220b) in the vacuum chamber (210) for sputtering a transparent conductive oxide layer;
A gas distribution system (230) for providing a processing gas in the vacuum chamber (210);
In particular, an etching device 280 for etching the layer stack; And
A controller (240) coupled to the gas distribution system (230) and configured to execute program code, the method (100) according to any one of the claims 1 to 13 performed during execution of the program code, / RTI >
Apparatus for depositing a layer stack for display manufacture.

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