US20140238646A1 - Sloped hierarchically-structured surface designs for enhanced condensation heat transfer - Google Patents

Sloped hierarchically-structured surface designs for enhanced condensation heat transfer Download PDF

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US20140238646A1
US20140238646A1 US13/776,459 US201313776459A US2014238646A1 US 20140238646 A1 US20140238646 A1 US 20140238646A1 US 201313776459 A US201313776459 A US 201313776459A US 2014238646 A1 US2014238646 A1 US 2014238646A1
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microstructures
nanostructures
distribution
sloping sides
droplet
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Ryan M. Enright
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Alcatel Lucent SAS
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Alcatel Lucent Ireland Ltd
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Priority to PCT/IB2014/000269 priority patent/WO2014128556A1/fr
Publication of US20140238646A1 publication Critical patent/US20140238646A1/en
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
    • F28F13/185—Heat-exchange surfaces provided with microstructures or with porous coatings
    • F28F13/187—Heat-exchange surfaces provided with microstructures or with porous coatings especially adapted for evaporator surfaces or condenser surfaces, e.g. with nucleation sites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427—Cooling by change of state, e.g. use of heat pipes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F2245/00—Coatings; Surface treatments
    • F28F2245/04—Coatings; Surface treatments hydrophobic
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F2255/00—Heat exchanger elements made of materials having special features or resulting from particular manufacturing processes
    • F28F2255/20—Heat exchanger elements made of materials having special features or resulting from particular manufacturing processes with nanostructures
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F2260/00—Heat exchangers or heat exchange elements having special size, e.g. microstructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4935—Heat exchanger or boiler making

Definitions

  • the invention relates to in general, heat transfer apparatuses, and methods for manufacturing the same.
  • Condensation is an important process in a number of two-phase heat transfer apparatuses implemented for thermal management. Improving the efficiency of such condensation heat transfer processes has the potential to enable size reductions of heat transfer apparatuses while still achieving the same overall heat transfer performance.
  • One embodiment is an apparatus.
  • the apparatus comprises a distribution of microstructures on an area of a surface, each of the microstructures having one or more sloping sides.
  • the apparatus comprises a distribution of nanostructures being located on the one or more sloping sides.
  • the distribution of microstructures on the area of the surface is configured to nucleate and grow droplets of liquid from a gas.
  • the distribution of nanostructures forms a superhydrophobic surface for the liquid.
  • the microstructures are configured to nucleate the droplets between the nanostructures.
  • the microstructures are ridges.
  • the microstructures are pointed structures.
  • Any of the above embodiments of the apparatus can further include a heat pipe or a vapor chamber, the distribution of microstructures being located in a condenser portion of the heat pipe or the vapor chamber.
  • the one or more sloping sides intersects with at least one side of the microstructure to form an apex shaped as a peak.
  • the separation distance between apexes of adjacent ones of the microstructures is equal to or less than about 10 microns.
  • At least one of the sloping sides intersects with at another side of an adjacent one of the microstructures at a base layer to form a valley. In some embodiments, at least one of the sloping sides and another side of the one microstructure separately intersect with a third side of the one microstructure to form an apex shaped as a mesa. In some embodiments, at least one of the sloping sides and another side of an adjacent one of the microstructures separately intersect with a horizontally oriented layer that is covered with the nanostructures and is adjacent to a base layer. In some embodiments, at least one of the sloping sides intersects with another side which forms a right angle with respect to a base layer.
  • At least one of the sloping sides intersects with another side of the one microstructure, and, the other side forms a different acute angle with respect to the line perpendicular to a base layer. In some embodiments, for at least one of the sloping sides, there are sloped portions that have the acute angle interspersed horizontal portions that are parallel with a base layer. In some embodiments, a distance between adjacent ones of the nanostructures is greater than a critical condensation radius for a nucleating one of the liquid droplet.
  • One embodiment is a system.
  • the system comprises heat generating equipment and a heat transfer apparatus configured to remove heat generated by the electronic equipment.
  • the apparatus includes a distribution of microstructures on an area of a surface, each of the microstructures having one or more sloping sides.
  • the apparatus comprises a distribution of nanostructures being located on the one or more sloping sides.
  • the distribution of microstructures on the area of the surface is configured to nucleate and grow droplets of liquid from a gas.
  • the distribution of nanostructures forms a superhydrophobic surface for the liquid.
  • the distribution of microstructures is located on the surface of a condenser of the apparatus.
  • the condenser is part of a heat pipe. In some embodiments, the condenser is part of a vapor chamber.
  • One embodiment is a method.
  • the method comprises forming a distribution of microstructures on an area of a surface, each of the microstructures having one or more sloping sides, wherein the distribution of microstructures on the area of the surface is configured to nucleate and grow droplets of liquid from a gas.
  • the method comprises forming a distribution of nanostructures being located on the one or more sloping sides, wherein the distribution of nanostructures forms a superhydrophobic surface for the liquid.
  • FIG. 1A presents a perspective view of an embodiment heat transfer apparatus
  • FIG. 1B presents a perspective view of an alternative embodiment of a heat transfer apparatus
  • FIG. 1C presents a perspective view of another alternative embodiment of a heat transfer apparatus
  • FIG. 2A presents a cross-sectional view of the apparatus shown in FIG. 1B along view line 2 - 2 ;
  • FIG. 2B presents a cross-sectional view of an alternative embodiment of a heat transfer apparatus, analogous to the view along line 2 - 2 in FIG. 1B ;
  • FIG. 2C presents a cross-sectional view of an alternative embodiment of the heat transfer apparatus, analogous to the view along line 2 - 2 in FIG. 1B ;
  • FIG. 2D presents a cross-sectional view of an alternative embodiment of a heat transfer apparatus, analogous to the view along line 2 - 2 in FIG. 1B ;
  • FIG. 2E presents a cross-sectional view of an alternative embodiment of a heat transfer apparatus, analogous to the view along line 2 - 2 in FIG. 1B ;
  • FIG. 3 presents a detailed cross-sectional view of a portion of the apparatus shown in FIG. 2A ;
  • FIG. 4 presents a perspective view of the portion of apparatus presented in FIG. 3 ;
  • FIG. 5 presents a flow diagram of an example method of manufacturing a heat transfer apparatus, such as any of the example apparatuses described in the context of FIGS. 1A-4 ;
  • FIG. 6 presents a flow diagram of a method
  • FIG. 7 presents a block diagram of a system.
  • Hierarchically structured condensation surfaces which enhance condensation heat transfer.
  • the hierarchically structured surfaces may, e.g., have both micron-scaled structural features (“microstructures”) and nanometer-scaled structural features (“nanostructures”).
  • non-wetting surfaces can enhance heat transfer coefficients, in comparison to the heat transfer via smooth surfaces.
  • the non-wetting surface is a surface covered with nanostructures, similar enhancements to heat transfer coefficients have typically not been realized.
  • the droplet gets to a certain critical size, and heat conduction through the bulk of the droplet begins to limit the heat transfer rate. It is therefore desirable for the droplet to leave the surface (often referred to droplet jumping) before the droplet reaches its critical size.
  • droplet jumping typically requires the coalescence of two or more droplets, which, in turn, is dictated by the number density of droplets nucleated on the surface.
  • the minimum jumping droplet diameter may be also restricted by a small number of nucleated droplets (large droplet spacing).
  • Providing a hierarchically structured condensation surface, with separated microstructures having nanostructures thereon, may provide an efficient heat transfer surface.
  • Providing microstructures having at least one sloped side may help to move larger droplets to the apexes of the microstructures, thereby freeing up surfaces for new droplet nucleation on condensation surfaces and promoting droplet jumping before a droplet reaches a critical size, which is heat-conduction limiting.
  • Providing nanostructures on the microstructures can create a non-wetting surface that increases the apparent contact angle and reduces the contact angle hysteresis of droplets forming on the microstructures. Thus, such nanostructures may facilitate the movement of the droplets away from droplet nucleation sites and towards apexes of the nanostructures.
  • a further benefit of using a hierarchically structured condensation surface with both microstructures and nanostructures thereon is that the effective heat transfer surface area is increased.
  • there can be an increased number of nucleation sites on the condensing surface leading to greater heat transfer rates compared to a condensing surface having only nanostructures.
  • FIGS. 1A-1C presents perspective views of different embodiments of heat transfer apparatuses 100 .
  • FIG. 2A presents a cross-sectional view of the apparatus shown in FIG. 1B along view line 2 A- 2 A.
  • FIG. 2A could also depict analogous cross-sectional views of the apparatuses shown in FIGS. 1A or 1 C.
  • FIG. 3 presents a detailed view of a portion of the apparatus shown in FIG. 2A , although this figure could also depict analogous detailed views of the apparatuses shown in FIG. 1A or 1 C.
  • the apparatus 100 comprises a condenser 105 .
  • the condenser 105 can be part of a variety of different two-phase heat transfer apparatuses such as, but not limited to, heat pipes, vapor chambers, looped heat pipes, two-phase forced convection flow loops or shell-and-tube surface condensers.
  • the condenser 105 can be a portion of the heat transfer apparatus 100 configured as a heat pipe which further includes an evaporator portion 107 .
  • the condenser 105 can be used in heat transfer apparatuses such as compact condensers for electronics thermal management, e.g., in telecommunications and data centers, industrial condensation heat exchangers, evaporator coils, dehumidifying coils, and/or water harvesting apparatuses.
  • compact condensers for electronics thermal management e.g., in telecommunications and data centers, industrial condensation heat exchangers, evaporator coils, dehumidifying coils, and/or water harvesting apparatuses.
  • the condenser 105 includes a base layer 110 and microstructures 115 (e.g., a distribution of microstructures) located on the base layer 110 .
  • Each microstructure 115 includes at least one sloped side 120 that forms an acute angle 125 with respect to a line 130 perpendicular to the base layer 110 .
  • the at least one sloped side 120 connects to an apex 135 of the microstructure 115 located above the base layer 110 .
  • An outer surface 140 of the sloped side 120 has nanostructures 305 (e.g., a distribution of nanostructures) thereon, wherein the nanostructures 305 are spaced apart from each other and project out from the outer surfaces 140 , e.g., as shown in FIG. 3 .
  • microstructure 115 refers to a structure that has at least linear one-dimension 145 adjacent to the base layer 110 (e.g., a base width or depth) that extends a distance across the microstructure 115 in a range of 1 to 1000 microns.
  • the term nanostructure 305 refers to a structure that has at least one linear dimension (e.g. height, width, or depth) that extends a distance from one side to an opposing side (e.g., opposing lateral sides 310 , 312 , or, top and bottom sides 315 , 317 ) of the nanostructure 305 in a range from 1 to 1000 nanometers. Additionally, the one linear dimension of the nanostructure 305 is at least 10 times smaller than the one dimension 145 of the microstructure 115 . As a non-limiting example, when the one dimension 145 of the microstructure 115 equals 1 micron, then the one dimension of the nanostructure 305 can be up to 100 nanometers.
  • one linear dimension e.g. height, width, or depth
  • the at least one linear dimension of the nanostructure 305 can be in a range of 1 to 100 nanometers.
  • the one dimension 145 of the microstructure 115 equals 100 microns
  • the one dimension of the nanostructure 305 can be up to 1000 nanometers.
  • the one dimension of the nanostructure 305 can be in a range of 1 to 1000 nanometers.
  • the term acute angle refers to an angle that is greater than zero degrees and less than 90 degrees.
  • the acute angle 125 is more preferably in a range from about 25 degrees to 65 degrees, and even more preferably, in a range from about 40 to 55 degrees.
  • each one of the microstructures 115 is a cone-shaped structure.
  • the at least one sloped side 120 joins with at least one other side 150 of the microstructure 115 at the apex 135 , wherein an outer surface 155 of the at least other side 150 have the nanostructures 305 thereon.
  • the at least one sloped side 120 can have a planar surface 140 and join with at least one other side 150 which also has a planar surface 155 to form ridge-shaped microstructures 115 .
  • Similar ridge-shaped microstructures could be formed where one or both of the surfaces 140 , 155 of the sides 120 , 150 are curved (e.g., curving inwards or curving outwards).
  • the at least one sloped side 120 can join with two or more other sides 150 , 160 , 165 at the apex 135 to form pyramidal-shaped microstructures structures (e.g., structures with three or more planar or curved sides joining at the apex 135 ).
  • the at least one other side 150 that joins the sloped side 120 at the apex 135 is another sloped side that forms another acute angle 210 with respect to the line 130 perpendicular to the base layer 110 .
  • the other sloped side 150 can form an acute angle 210 that is about equal in magnitude but opposite in sign to the acute angle 125 of the sloped side 120 .
  • each of the other sides 150 , 160 , 165 can be sloped sides and form about the same acute angles with respect to the line 130 .
  • the sloped side 120 helps to force a growing droplet 220 in a direction 222 away from droplet nucleation sites, e.g., sites in-between the nanostructures 305 , towards the apexes 135 of the microstructures 115 .
  • the sloped side 120 may help such droplets 220 to move towards the apexes 135 of the microstructures 115 .
  • droplet nucleation is depicted as originating at a valley 225 between adjacent microstructures 115 , a person of ordinary skill in the relevant arts would understand that droplet nucleation could originate at sites anywhere on the surfaces 140 , 155 , of the sides 120 , 150 .
  • the apexes 135 of the microstructures 115 are separated from each other by a separation distance 230 .
  • the selection of the separation distance 230 between adjacent microstructures 115 is important to aiding the droplet 220 moving away the droplet nucleation sites, and to promote droplet jumping, before the droplet growth rate becomes heat conduction limited.
  • water droplet growth become heat conduction limited at a droplet radius of about 5 microns or greater. Therefore, for certain embodiments of the apparatus 100 , where heat transfer involves water condensation (e.g., occurs through a water condensation heat transfer processes), the separation distance 230 is preferably equal or less than about 10 microns.
  • the separation distances 230 of a distribution of microstructures 115 could be set equal to or less than two times the preferred maximal allowable droplet radius.
  • the separation distance 230 between the apexes 115 of adjacent ones of the microstructures 115 is in a range of 100 microns to 1 micron, and in some cases a range of 10 microns to 1 micron.
  • the sloped side 120 intersects with at least one other side 150 of the microstructure 115 to form the apex 135 shaped as a peak. It is believed that a peaked-shaped apex 135 can reduce a growing droplet's 220 surface contact with the microstructures 115 , and, thereby facilitate droplet jumping.
  • the sloped side 120 of the microstructure 115 intersects with at least one side (one of sides 120 , 150 ) of an adjacent microstructure 115 at the base layer 110 to form a valley 225 .
  • Configuring the condenser 105 such that the sides of the adjacent microstructures 115 intersect at the base layer 110 helps to increase the total surface area of the condensation surface, and, can enhance condensation heat transfer by also providing a number of potential droplet nucleation sites.
  • the at least one sloped side 120 does not intersect with other sloping sides of the same microstructure 115 or of adjacent microstructures 115 .
  • the sloped side 120 and another side 150 of the same microstructure 115 can separately intersect with a third side 235 (e.g., a planar horizontally oriented side) of the microstructure 115 to form the apex 135 shaped as a mesa.
  • a third side 235 e.g., a planar horizontally oriented side
  • the sloped side 120 of one of the microstructures 115 , and, another side 150 of an adjacent one of the microstructures 115 can separately intersect with a nanostructure 305 covered horizontally oriented layer 240 that is adjacent to the base layer 110 .
  • the microstructures 115 can have various other shapes to increase the surface area upon which condensation can occur.
  • the at least one sloped side 120 can intersect with another side 150 of the microstructure 115 which forms a right angle 250 with respect to the base layer 110 , to form the apex 135 , e.g., shaped as a peak. That is, the other side 150 has a surface 155 that is parallel with respect to a line 130 perpendicular to the base layer 110 .
  • the at least one sloped side 120 of one microstructure 115 can intersect with another side 150 of the same microstructure 115 .
  • the other sloped side forms a different magnitude acute angle 210 (e.g., at least about 10 percent different than the acute angle 125 ) with respect to the line 130 perpendicular to the base layer 110 , to form the apex 135 , e.g., shaped as a peak.
  • sloped side 120 and the other sloped side 150 could separately intersect with a third layer 235 or fourth layer 240 to form structures analogous to that shown in FIG. 2B .
  • the at least one sloped side 120 , and in some cases, the other side 140 , (or sides 140 , 160 , 165 , FIG. 1C ) which are sloped includes sloped portions 250 that have the acute angle 125 interspersed with horizontal portions 255 which are parallel with the base layer 110 .
  • the microstructures 115 of the condenser 105 can have the same shape and be about uniformly separated from each other.
  • microstructures 115 of the condenser 105 can have a variety of different shapes, such as, but not limited to, combinations of any of the shapes discussed in the context of FIGS. 1A-2E , and/or, the microstructures 115 can have different separation distances 230 , such as progressively increasing or decreasing distances 230 along one or more directions parallel to the base layer 110 .
  • the separation distance 230 may monotonically increase or decrease with along one direction parallel to the base layer 110 .
  • FIG. 4 presents a perspective view of the portion of example apparatus 100 presented in FIG. 3 , depicting example nanostructures 305 of the apparatus 100 .
  • the nanostructures 305 can be ridged-shaped, and, the ridges are spaced apart from each other.
  • the nanostructures 305 can be pillar-shaped and the pillars are spaced apart from each other.
  • the nanostructures 305 can cover the sloped side 120 , and any of the other sides 150 , 160 , 165 , peaked or mesa shaped apex 135 , or horizontal layer 240 discussed in the context of FIGS. 1A-2E .
  • nanostructures 305 to provide a non-wetting surface can be advantageous over conventional non-wetting condensing surfaces.
  • Droplet adhesion to the condensation surface can be reduced with the appropriate nanostructure configuration.
  • Cassie state refers to wetting state of the droplet where the droplet rests on the tops 315 of the nanostructures 305 in the vicinity of the droplet.
  • the nanostructure 305 nearest the top 315 is in contact with the droplet when the droplet is in a Cassie state.
  • a Cassie state most of the droplet is not in contact with the nanostructures 305 , so that the droplet's adhesion to the nanostructures 305 is reduced.
  • most of the droplet in a Cassie state rests on the tops 315 of the nanostructures 305 , the sides 310 , 312 , and the surfaces 140 , 155 that support the nanostructures 305 , are available as sites for new droplet nucleation.
  • nanostructures 305 can have to facilitate a droplet in attaining a Cassie state.
  • a Wenzel state refers to a wetting state where the droplet substantially contacts the entire surfaces of the nanostructures in the vicinity of the droplet.
  • substantially the entire height of the droplet may contact the sides 310 , 312 and tops 315 of the nanostructures 305 support surfaces 140 , 155 .
  • it is often undesirable that a droplet take Wenzel states because the large contact area of the droplet in such a state can provide a large adhesion that pins the droplet in-between the nanostructures 305 .
  • Wenzel state formation therefore impedes the droplet from moving away from its nucleation site to the apexes 135 of the microstructures 115 , which in turn may reduce the efficiency of condensation heat transfer.
  • the surface 140 , or surfaces 140 , 155 that have the nanostructures 305 thereon to satisfy the following condition when a liquid droplet rests on the surface: ⁇ 1/r*cos ⁇ a ⁇ 1.
  • the parameter r is the surface roughness factor of the surfaces of the nanostructure
  • ⁇ a is an intrinsic advancing contact angle of the liquid droplet.
  • the surface roughness factor, r is defined as the total surface area, including the areas of the sides 310 , 312 , and tops 315 and support surfaces 140 , 150 in between the nanostructures divided by projected surface area of the surfaces 140 , 150 , e.g., the area support surfaces 140 , 150 with no nanostructures 305 thereon.
  • the intrinsic advancing contact angle, ⁇ a refers to the contact angle that the fluid droplet would have on a smooth surface, e.g., the support surfaces 140 , 150 with no nanostructures 305 thereon.
  • the adjacent nanostructures 305 it is desirable for the adjacent nanostructures 305 to be spaced apart by a minimum separation distance 320 (e.g., the distance from the side 310 of one nanostructure 305 to the side 312 of an adjacent nanostructure 305 ).
  • the suitable minimum separation distance 320 is that which allows the droplets to form and grow in-between the nanostructures 305 while avoiding undesirable capillary evaporation effects.
  • the distance 320 is greater than a critical condensation radius 410 , r c , for a nucleating fluid droplet.
  • the critical condensation radius can be estimated by the formula:
  • ⁇ is the ratio of liquid to vapor surface tension
  • ⁇ is a molecular volume of the liquid phase
  • k is the Boltzmann constant
  • S is defined as the ratio of the vapor pressure pv to the saturation pressure at the condensing surface temperature T.
  • the distance 320 separating adjacent nanostructures is equal to of greater than about 10 nanometers.
  • the distance 320 is in a range of about 1 to 100 nanometers, and in some cases in a range of about 10 to 20 nanometers.
  • the distance 320 between adjacent ones of the nanostructures 305 has a value that promotes a droplet to attain the Cassie state before the droplet radius 410 , R, grows to size that is heat conduction limiting.
  • this value of the radius 410 is about 5 microns or larger.
  • the Cassie state is promoted by spacing the nanostructures apart by a preferred distance 320 and by having a height 420 that facilitates the growing droplet to have a receding contact angle 430 , ⁇ r, of at least about 90 degrees.
  • the nanostructures satisfies the relationship:
  • ⁇ r is a receding contact angle 430 of at least 90 degrees for a maximally desired size of droplet located on tops of the nanostructures
  • h is the uniform height 420 of the nanostructures 305
  • R is a radius 410 of the fluid droplet
  • w is a uniform separation distance 320 between adjacent ones of the nanostructures 305 .
  • receding contact angle 430 as used herein is defined as the minimum stable angle that the droplet achieves while on the nanostructures 305 .
  • a person of ordinary skill in the relevant arts would be familiar with methods to measure the receding contact angle 430 of a droplet 220 (see e.g., “Condensation on Superhydrophobic Surfaces: The Role of Local Energy Barriers and Structure Length Scale” and Supporting Information, by Enright et al., Langmuir pub. Aug 29, 2012 (“Enright-1”), incorporated by reference herein in its entirety).
  • the term receding contact angle 430 is defined as the minimum stable angle that the droplet achieves while on the nanostructures 305 .
  • a person of ordinary skill in the relevant arts would be familiar with methods to measure the receding contact angle 430 of a droplet 220 (see e.g., “Condensation on Superhydrophobic Surfaces: The Role of Local Energy Barriers and Structure Length Scale” and Supporting Information, by Enright et al., Langmuir pub. Aug 29, 2012 (“Enright-1”), incorporated by reference herein in its entirety).
  • the receding contact angle 140 for a droplet to spontaneously achieve a Cassie state can be reduced by reducing the ratio h/R, and/or, increasing the ratio h/w.
  • the separation distance 320 between microstructures, w is then equal to 833 nanometers and the h/w ratio equals 0.6.
  • h/R ratio 0.1 and h equals 0.5 ⁇ m
  • w is then equal to 451 nanometers and the h/w ratio equals 1.1, or, for a receding contact angle 430 , ⁇ r , equal to 100 degrees, w, is then equal to 187 nanometers, and the h/w ratio equals 2.7, or, for a receding contact angle 430 , ⁇ r , equal to 90 degrees, w, is then equal to 16 nanometers, and the h/w ratio equals 31.3.
  • the apparatus 100 reduce the adhesion of a de-wetted droplet (e.g., a droplet in a Cassie state) it is desirable to reduce the fraction of space occupied by the nanostructures 305 relative to the open space in-between adjacent ones of the nanostructures.
  • the solid fraction occupied by the nanostructures 305 is equal to or less than 0.1.
  • the term solid fraction herein is equal to d/(d+w), where d is the width 435 of the nanostructure and w is the separation distance 320 between adjacent ones of the nanostructures 305 .
  • the width 435 is preferably equal or less than 93 nanometers. Or, when the separation distance 320 is equal to 451 nanometers, then the width 435 is preferably equal or less than 50 nanometers. Or, when the separation distance 320 is equal to 451 nanometers, then the width 435 is preferably equal or less than 50 nanometers. Or, when the separation distance 320 is equal to 187 nanometers, then the width 435 is preferably equal or less than 21 nanometers. Or, when the separation distance 320 is equal to 16 nanometers, then the width 435 is preferably equal or less than 1.8 nanometers.
  • another apparatus 100 embodiment comprises a distribution of microstructures 115 on an area of a surface 180 (e.g., a condensation surface), each of the microstructures 115 having one or more sloping sides 120 , 155 , 160 , 165 .
  • the apparatus 100 also comprises a distribution of nanostructures 310 being located on the one or more sloping sides 120 , 155 , 160 , 165 .
  • the distribution of microstructures 115 on the area of the surface 180 is configured to nucleate and grow droplets 230 of liquid from a gas.
  • the distribution of nanostructures 310 forms a superhydrophobic surface 325 for the liquid.
  • a surface 325 is considered to be a superhydrophobic surface 325 (synonymous with the term non-wetting surface as used herein) when a fluid droplet 230 of the fluid laying on the surface 325 has a contact angle 325 of equal to or greater than about 90 degrees.
  • a hydrophillic surface synthetic with the term wetting surface as used herein
  • a fluid droplet 145 laying on the surface 325 has a contact angle 140 of less or equal to 90 degrees.
  • the microstructures 115 are configured to nucleate the droplets between the nanostructures 310 .
  • the microstructures 115 are ridges.
  • the microstructures 115 are pointed structures (e.g., the apexes 135 have a pointed shape).
  • the apparatus 100 further includes a heat pipe 170 or a vapor chamber 170 , the distribution of microstructures being located in a condenser 105 portion of the heat pipe 170 or vapor chamber 170 .
  • microstructures 115 and the distribution of nanostructures 310 could include any combination of any or all of the microstructures 115 or nanostructures 310 configurations disclosed herein.
  • FIG. 5 presents a flow diagram of an example method of manufacturing a heat transfer apparatus of the disclosure, such as any of the example apparatuses 100 described in the context of FIGS. 1A-4 .
  • the method includes a step 505 of manufacturing a condenser.
  • Manufacturing the condenser includes a step 510 providing a base layer 110 and step 515 of forming microstructures 115 on the base layer 110 .
  • Each microstructure 115 includes at least one sloped side 120 that forms an acute angle 125 with respect to a line 130 perpendicular to the base layer 110 .
  • the at least one sloped side 120 connects to an apex 135 of the microstructure 115 located above the base layer 110 .
  • the method also includes a step 520 of forming nanostructures 305 on a surface 140 of the at least one sloped side 120 , wherein the nanostructures 305 are spaced apart from each other and project out from the surface 140 .
  • providing the base layer 110 in step 510 can simply include providing a material layer 170 , e.g., of copper, aluminum, semiconductor material upon which the microstructures 115 are directly formed from in step 515 .
  • a material layer 170 e.g., of copper, aluminum, semiconductor material upon which the microstructures 115 are directly formed from in step 515 .
  • the use of a highly heat conductive material layer 170 such copper, aluminum is preferred.
  • the providing the base layer 110 in step 510 can include a step 525 of depositing a second material layer 175 on the first material layer 170 , where the microstructures 115 is formed from the second material layer 175 .
  • a second material layer 175 of copper or aluminum could be deposited on a first material layer 170 of steel, via electrolytic, electroless or other deposition processes familiar to a person of ordinary skill in the relevant arts.
  • forming the microstructures 115 includes a step 530 of mechanically modifying portions of the base layer 110 .
  • a base layer 110 of copper or aluminum, or, a second layer 175 of the base layer 110 can be mechanically indented, machined, stamped, embossed or otherwise mechanically modified to form any of the microstructure 115 shapes discussed in the context of FIGS. 1A-4 .
  • forming microstructures 115 includes a step 535 of etching portions of the base layer 110 .
  • a base layer 110 or a second layer 175 composed of a semiconductor material, such as a silicon layer, can be etched by wet or dry etching processes, or laser etching processes, familiar to a person of ordinary skill in the relevant arts to form the microstructures 115 .
  • forming the nanostructures 305 includes a step 540 of wherein forming the nanostructures includes exposing the surface 140 of the sloped side 120 , (or surfaces 140 , 155 of the sides 120 , 150 ) of the microstructure 115 to an oxidation process.
  • a copper base layer 110 of second layer 175 can be exposed to chemical oxidation conditions such as in “Condensation on Superhydrophobic Copper Oxide Nanostructures,” by Enright et al. Proceedings of the 3rd Micro/Nanoscale Heat and Mass Transfer International Conference, Atlanta, Ga., Mar.
  • an aluminum base layer 110 or second layer 175 can be exposed to well-known hydrothermal oxidation processes to form the nanostructures 305 therefrom.
  • forming the nanostructures 305 includes exposing the surface 140 of the sloped side 120 , (or surfaces 140 , 155 of the sides 120 , 150 ) of the microstructure 115 to an etch process in step 545 .
  • microstructures 115 composed of a semiconductor material, such as silicon, can be subjected to a reactive ion etching process to form the nanostructures 305 , such as black silicon nanostructures.
  • etching process for forming nanostructures are presented in Enright-1.
  • part of forming the nanostructures 305 includes functionalizing the nanostructures 305 in step 550 with a low surface energy material.
  • a low surface energy material refers to a material having a surface energy of about 22 dynes/cm (about 22 ⁇ 10-5 N/cm) or less as disclosed in U.S. Pat. No. 7,695,550 to Krupenkin et al. (“Krupenkin”), incorporated by reference herein in its entirety.
  • Non-limiting examples of functionalizing nanostructures in accordance with step 550 includes coating nanostructures 305 with chlorosilanes, fluorosilanes or fluorinated polymers, such as disclosed in Krupenkin, Enright-1 or Enright-2.
  • FIG. 6 presents a flow diagram of another method embodiment of the disclosure.
  • the method comprises a step 610 of forming a distribution of microstructures 115 on an area of a surface 180 , each of the microstructures 115 having one or more sloping sides 120 , 155 , 160 , 165 .
  • the distribution of microstructures 115 on the area of the surface 180 is configured to nucleate and grow droplets 230 of liquid from a gas.
  • the method comprises a step 620 of forming a distribution of nanostructures 310 being located on the one or more sloping sides 120 , 155 , 160 , 165 .
  • the distribution of nanostructures forms a superhydrophobic surface 325 for the liquid.
  • the steps 610 , 620 of forming the distribution of microstructures 115 and the distribution of nanostructures 310 could include any or all of the microstructures 115 or nanostructures 310 configurations disclosed herein and any combination of any or all of the method steps for of forming the microstructures 115 or nanostructures 310 disclosed herein.
  • FIG. 7 illustrates another embodiment of the disclosure, a system 700 .
  • the system 700 can be communication system such as a telecommunication system or a system component (e.g., electronic cabinet) of a communication system.
  • the system 700 comprises heat generating equipment 710 , such electrical equipment, e.g., circuit boards having heat generating components thereon.
  • the system 700 also comprises a heat transfer apparatus 720 .
  • the heat transfer apparatus 720 can be configured to remove heat generated by the equipment 710 of the system 700 .
  • the heat transfer apparatus 720 can be or include any apparatuses described herein.
  • the apparatus 720 can include a distribution of microstructures 115 on an area of a surface 180 (e.g., a condensation surface), each of the microstructures 115 having one or more sloping sides 120 , 155 , 160 , 165 .
  • the apparatus 720 also comprises a distribution of nanostructures 310 being located on the one or more sloping sides 120 , 155 , 160 , 165 .
  • the distribution of microstructures 115 on the area of the surface 180 is configured to nucleate and grow droplets 230 of liquid from a gas.
  • the distribution of nanostructures 310 forms a superhydrophobic surface 325 for the liquid.
  • the distribution of microstructures 115 is located on the surface 180 of a condenser 105 of the apparatus 710 .
  • the condenser 105 is part of a heat pipe 170 , while in other embodiments, the condenser 105 is part of a vapor chamber 170 .

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DE102020125919B4 (de) 2020-10-04 2022-06-23 Elke Münch Durch eine Temperaturdifferenz betreibbare, mobile Vorrichtung zur Reinigung und Desinfizierung von Raumluft und eine Testvorrichtung hierfür
DE102020125921A1 (de) 2020-10-04 2022-04-07 Elke Münch Durch eine Temperaturdifferenz betreibbare, mobile Vorrichtung zur Reinigung und Desinfizierung von Raumluft
DE102020125921B4 (de) 2020-10-04 2022-05-19 Elke Münch Durch eine Temperaturdifferenz betreibbare, mobile Vorrichtung zur Reinigung und Desinfizierung von Raumluft
DE102020125920A1 (de) 2020-10-04 2022-04-07 Elke Münch Durch eine Temperaturdifferenz betreibbare, mobile Vorrichtung zur Reinigung und Desinfizierung von Raumluft
DE102020125922B4 (de) 2020-10-04 2022-06-02 Elke Münch Mobile Vorrichtung zur Reinigung und Desinfizierung von Raumluft
EP3981442A1 (fr) 2020-10-04 2022-04-13 Elke Münch Dispositif mobile de nettoyage et de désinfection de l'air ambiant pouvant fonctionner par différence de température
EP3978038A1 (fr) 2020-10-04 2022-04-06 Elke Münch Dispositif mobile de nettoyage et de désinfection de l'air ambiant pouvant fonctionner par différence de température et dispositif d'essai associé
WO2022083895A1 (fr) 2020-10-24 2022-04-28 Magnetic Hyperthermia Solutions B.V. Dispositif et procédé pour atténuer et/ou détruire des micro-organismes, des virus, des virions, des prions, des allergènes et des pseudoallergènes et/ou pour bloquer leurs voies de transmission
DE102020006520A1 (de) 2020-10-24 2022-04-28 Magnetic Hyperthermia Solutions B.V. Vorrichtung und Verfahren zur Attenuierung und/oderAbtötung von Mikroorganismen, Viren und Virionen
CN113446887A (zh) * 2021-06-02 2021-09-28 广州大学 微针吸液芯平板热管结构及其制造方法
US11987021B2 (en) 2021-09-01 2024-05-21 The Boeing Company Multilayer riblet appliques
US20230363111A1 (en) * 2022-05-08 2023-11-09 Amulaire Thermal Technology, Inc. Immersion-type liquid cooling heat dissipation structure
DE102022001868A1 (de) 2022-05-29 2023-11-30 Elke Hildegard Münch Biozid beschichtete, retikulierte Schaumstoffe aus Kunststoff, Verfahren zu ihrer Herstellung und ihre Verwendung
US12128189B2 (en) * 2024-03-13 2024-10-29 California Institute Of Technology Anti-infection fluidic channel

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