US20120234519A1 - Low-Profile Heat Sink with Fine-Structure Patterned Fins for Increased Heat Transfer - Google Patents
Low-Profile Heat Sink with Fine-Structure Patterned Fins for Increased Heat Transfer Download PDFInfo
- Publication number
- US20120234519A1 US20120234519A1 US13/049,707 US201113049707A US2012234519A1 US 20120234519 A1 US20120234519 A1 US 20120234519A1 US 201113049707 A US201113049707 A US 201113049707A US 2012234519 A1 US2012234519 A1 US 2012234519A1
- Authority
- US
- United States
- Prior art keywords
- pin fins
- heat
- base member
- fins
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000012546 transfer Methods 0.000 title claims description 44
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 15
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 7
- 239000002071 nanotube Substances 0.000 claims description 6
- 239000002070 nanowire Substances 0.000 claims description 6
- 238000003491 array Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 230000002708 enhancing effect Effects 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000012530 fluid Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002041 carbon nanotube Substances 0.000 description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 238000005242 forging Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000005457 Black-body radiation Effects 0.000 description 1
- 238000009623 Bosch process Methods 0.000 description 1
- 240000001973 Ficus microcarpa Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
- B23P15/26—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass heat exchangers or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
Definitions
- the heat generated by electronic components can be transported to other places or locations through the use of thermally conductive materials or devices such as heat pipes. However, eventually the heat has to be dumped to the surrounding fluid medium, via some form of heat sink.
- the efficiency of the heat transfer to the surrounding medium depends on the geometry of the heat sink, the contact surface with the air (or other fluid medium), the flow field around the heat sink, and the material properties of air. The transfer of heat from the heat sink to the air is usually one of the major thermal resistances of the full thermal system.
- the heat transfer between a heat sink and air is governed by:
- the length of the fins of a typical heat sink for electronic components is typically on the order of ten times (or more) of the fin diameter. Since the fins are typically made using an extrusion or forging process, their diameters cannot be too small, since very thin fins may break in the process. Hence the fin length is typically on the order of tens of millimeters, resulting in bulky heat sinks.
- the present invention introduces fine-structure designs and their manufacturing methods to heat sinks, to tremendously increase the contact surface with air, to increase heat flux density across the heat sink, to reduce the drag force on the flow of t he fluid medium around the heat sink, and at the same time to keep the heat sink compact, with a low profile.
- multiple fine-structure patterned (herein FSP) heat sinks of the present invention can be stacked up for greater overall heat transfer, while retaining compact dimensions.
- the present invention creates fine-structure patterned fins that protrude from the base surfaces of a heat sink.
- One embodiment of the invention is directed to a device for transferring heat comprises a base member and a first array of pin fins supported by the base member, the pin fins having an aspect ratio of not less than about 10, and the pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, either one or both of the base member and pin fins comprising a metallic or semiconductor material.
- One more embodiment of the invention is directed to a method for transferring heat.
- the method comprises providing a device for transferring heat which comprises a base member and a first array of pin fins supported by the base member, the pin fins having an aspect ratio of not less than about 10, and the pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, the base member and/or pin fins comprising a metallic or semiconductor material.
- the method includes locating the base member relative to an object to transfer heat between the pin fins and the object and so that the pin fins are in contact with a gaseous environment to enable heat transfer between the pin fins and the gaseous environment.
- FIG. 1A exemplifies a conventional pin-fin heat sink of the prior art, made of a thermally-conductive metal such as Aluminum Alloy 6063.
- FIG. 1B is a rear view of the conventional pin-fin heat sink of FIG. 1A .
- FIG. 1C illustrates a conventional radial-type prior art heat sink.
- FIG. 2 illustrates another prior art heat transfer mechanism that transports heat via a heat pipe to the finned heat sinks, where the heat is dissipated to air.
- FIGS. 3A , 3 B, and 3 C illustrate a representative geometrical model of a heat sink of one embodiment of the present invention, whose base surface is patterned with fine-scale pin fins.
- FIGS. 3D , 3 E, and 3 F illustrate three kinds of pin fin cross-sections that are intended to increase the contact surface with air in embodiments of the present invention.
- FIG. 3G illustrates one kind of pin fin cross-section to introduce the definition of equivalent diameter.
- FIG. 3H shows a perspective view of an FSP heat sink of an embodiment of the present invention.
- FIG. 3I presents a single pin fin from an FSP heat sink of an embodiment of the present invention, for the purpose of depicting its thermal conduction properties.
- FIG. 4 illustrates a semiconductor fabrication process flow for making a micro-structure pin fin heat sink of an embodiment of the present invention.
- FIG. 5 exemplifies a process for fabricating nano-scale carbon tubes as pin fins on a thermally conductive substrate.
- FIG. 7C shows a highly thermally conductive material that is metallically bonded to an FSP heat sink.
- FIG. 9 B shows the natural convection flow between two FSP heat sinks.
- FIGS. 11A and 11B show an embodiment of the present invention in which the base of the heat sink has perforated holes for increasing flow velocity perpendicular to the base, in order to enhance the heat transfer.
- At least some of the embodiments herein include a compact, low-profile heat sink with fine-structure patterned pin fins for increased heat transfer.
- These embodiments introduce fine-structure designs and their manufacturing methods to the field of heat sinks, to tremendously increase the contact surface with air, to increase heat flux density across the heat sink, to reduce the drag force on the flow of the fluid medium around the heat sink, and at the same time to keep the heat sink compact, with a low profile.
- the embodiments of the present invention have applications in the removal of heat from electronic components and devices, as well as any application where efficient heat transfer is desired.
- the fine-structure patterned (FSP) pin fins retain the typical aspect ratio of conventional pin fin heat sinks of the prior art, and also have a similar relationship between pin fin diameter and pin fin spacing.
- the FSP pin fin heat sink of the present invention has many more pin fins, when compared to a conventional heat sink of similar base area, and the FSP pin fins are of greatly reduced height. This results in the FSP pin fin heat sink achieving heat transfer that is comparable to that of a conventional heat sink of similar base area, but with the FSP pin fins having a greatly reduced height dimension.
- an FSP pin fin heat sink can achieve much greater heat transfer, when compared to a conventional heat sink of similar volume.
- Multiple FSP pin fin heat sinks can be affixed to a common heat spreader, and it is also possible to fabricate FSP pin fin heat sinks with pin fins on both sides of a common base plate.
- a method is described for using semiconductor processing techniques to fabricate micro-structure PSP fin pin heat sinks, from a variety of thermally conductive substrate materials, including metals and semiconductor material.
- An alternative method is described for fabricating nano-scale carbon nano-tubes, or metallic nano-wires as pin fins on a thermally conductive substrate.
- lattice configurations shown in FIGS. 3D to 3F are square for illustrative purpose.
- Other lattice configurations such as triangles and rectangles or other polygons are within the scope of the present invention.
- the fine-structure pin fins of the present invention can be created by either etching or chemical growth processes. Here two methods are introduced as examples, to illustrate processes for making fine-structure pin fins from a piece of thermally-conductive plate as a base.
- the optically exposed area of the photoresist (if positive photoresist is used) is washed out during the development. It is fairly easy to create photoresist dots (indicated by 405 ) with sizes ranging from a few microns to a few tens of microns, by using modern lithography technology.
- hydroflouride acid is used to chemically etch the silicon dioxide layer ( 408 ) that is not covered by the photoresist ( 405 ), which is then removed afterwards.
- a dry etching method such as Deep Reactive Ion Etching (DRIE) is applied to dig deep recesses (as indicated by 406 in Step 5) in the area not covered by silicon dioxide ( 408 ).
- DRIE Deep Reactive Ion Etching
- Step 4 growing seeds ( 507 ) such as Fe 2 O 3 for later growing of nano-tubes are deposited into the voids ( 506 ), as shown in Step 4.
- the unwanted polymer residual is removed in Step 5, leaving the growing seeds ( 507 ) exposed on the surface of the substrate ( 501 ).
- single-wall or multi-wall carbon nano-tubes are grown on the top of the growing seeds ( 507 ) by either chemical vapor deposition or wet chemical growth as shown in Step 6.
- carbon nano-tubes have thermal conductivity on the order of a few times to tens of times that of copper.
- the diameter of a carbon nano-tube ranges from a few nanometers to tens of nanometers.
- the above growing procedure can also be applied to the other side of the substrate ( 501 ).
- a heat sink with nano-tubes grown on both sides, that is expected to provide super-efficient heat transfer.
- Processes similar to the ones described above for growing carbon nano-tubes can also be applied to growing nano-wires, composed of metals such as transition metals, copper (Cu), silver (Ag, and gold (Au), as well as semiconductors such as silicon (Si), germanium (Ge), and indium arsenide (InAs), all having good thermal conductivity.
- Methods capable of growing the pin fins ( 301 ) in FIG. 3B with diameters ranging from a few nanometers up to the sub-millimeter range, with a pin fin aspect ratio greater than about three or about ten, are all within the scope of the present invention.
- the nanotubes and nanowires have diameters of not more than 1 micron.
- Molding methods may also be used for making pin fins having aspect ratio less than 3, but have a challenge for larger aspect ratio.
- Laser ablation that sends high power laser pulses to ablate material over a surface line by line can also be a feasible method to create high aspect fine-structure fin pins out of a thermal conductive planar material though the production speed may be only moderate.
- FIG. 3I shows a single pin fin taken from the heat sink in FIG. 3H .
- the temperature of the heat sink base ( 306 ) is T b
- the temperature of the air or fluid around the heat sink is T ⁇ .
- the temperature distribution along the length of the pin fin, the heat flux from the heat sink base to the pin fin, and the pin fin heat transfer efficiency, respectively, are defined as follows (See Gregory Nellis & Sanford Klein, Heat Transfer, Cambridge University Press, 2009.):
- T - T ⁇ T b - T ⁇ cosh ⁇ ( m ⁇ ( L - x ) ) + h _ mk ⁇ sinh ⁇ ( m ⁇ ( L - x ) ) cosh ⁇ ( mL ) + h _ mk ⁇ sinh ⁇ ( mL ) Equation ⁇ ⁇ ( 3 ) q .
- ⁇ fin ( T b - T ⁇ ⁇ h _ ⁇ ⁇ per ⁇ ⁇ k ⁇ ⁇ A c ⁇ sinh ⁇ ( mL ) + h _ mk ⁇ cosh ⁇ ( mL ) cosh ⁇ ( mL ) + h _ mk ⁇ sinh ⁇ ( mL ) Equation ⁇ ⁇ ( 4 )
- ⁇ fin [ tanh ⁇ ( mL ) + mL ⁇ ⁇ AR tip ] mL ⁇ [ 1 + mL ⁇ ⁇ AR tip ⁇ tanh ⁇ ( mL ) ] ⁇ ( 1 + AR tip ) Equation ⁇ ⁇ ( 5 )
- equations (3)-(5) can be simplified to:
- T - T ⁇ T b - T ⁇ cosh ⁇ ( m ⁇ ( L - x ) ) cosh ⁇ ( mL ) Equation ⁇ ⁇ ( 6 )
- q . fin ( T b - T ⁇ ) ⁇ h _ ⁇ ⁇ per ⁇ ⁇ k ⁇ ⁇ A c ⁇ tanh ⁇ ( mL ) Equation ⁇ ⁇ ( 7 )
- ⁇ fin tanh ⁇ ( mL ) ( mL ) Equation ⁇ ⁇ ( 8 )
- Equation (7) For free convection air flow whose heat transfer coefficient is less than 2 w/m 2 k and forced air flow whose heat transfer coefficient is generally less than 200 w/m 2 k, mL in equation (7) is much less than 1. Equation (7) and (8) are therefore approximated to
- Equation 9 illustrates the heat flux across the heat sink's unit base area to the pin fins.
- the projected area of the pin fins per unit length of heat sink base is the projected area of the pin fins per unit length of heat sink base.
- the drag force per unit length of heat sink base is proportional to L, assuming that the pin fin shapes are the same, and that the lattice ratio
- the FSP heat sink bank in FIG. 7A is able to draw a lot of heat from the heat source ( 706 ).
- a fan ( 801 ) in FIG. 8 can be mounted on one side of the heat sink bank in the embodiment of FIG. 7A as well as other embodiments herein to increase the flow of air past the heat sink bank, thereby providing further improvement in heat transfer.
- Perforated holes may be drilled through the base plate ( 1105 ) of the FSP heat sink ( 1102 ), to generate a flow perpendicular to the base plate's surface, thereby causing thermal boundary layer bursting or circulation, leading to increased flow turbulence for enhanced heat convection.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
In one embodiment, a device for transferring heat comprises a base member and a first array of pin fins supported by the base member, the pin fins having an aspect ratio of not less than about 10, and the pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, either one or both of the base member and pin fins comprising a metallic or semiconductor material. To form this device, a substrate is provided. A pattern is formed on the substrate, the pattern having holes therein or in the form of dots with cross-sectional dimensions of not more than about 0.3 mm. Pin fins supported by the substrate are formed, where the pin fins have an aspect ratio of not less than about 10, and not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length. Either one or both of the base member and pin fins comprise a metallic or semiconductor material. The pattern is then removed.
Description
- Electronic components or devices generate heat locally. It is desirable to extract or remove this heat, to bring down the temperature of the components or devices, in order to increase their performance and enhance component reliability. The heat generated by electronic components can be transported to other places or locations through the use of thermally conductive materials or devices such as heat pipes. However, eventually the heat has to be dumped to the surrounding fluid medium, via some form of heat sink. The efficiency of the heat transfer to the surrounding medium (for simplicity, air is used as the example in the description of the present patent application; however, other fluid media such as water or other liquids and gases are also applicable) by the heat sink depends on the geometry of the heat sink, the contact surface with the air (or other fluid medium), the flow field around the heat sink, and the material properties of air. The transfer of heat from the heat sink to the air is usually one of the major thermal resistances of the full thermal system.
- The heat transfer between a heat sink and air is governed by:
-
Q=ht A(THS−T∞) Equation I - where Q is the amount of heat transferred to the air, ht is the average heat transfer coefficient, A is the contact surface of the heat sink with the medium, THS is the average heat sink temperature, and T∞ is the air temperature in free stream.
- Many types of geometries for heat sinks have been introduced for forced-air and natural convection systems, respectively. However, no matter how the geometry is arranged, the contact surface with the air medium is either limited, or it hinders the flow field such that the heat transfer coefficient is herein reduced. The length of the fins of a typical heat sink for electronic components is typically on the order of ten times (or more) of the fin diameter. Since the fins are typically made using an extrusion or forging process, their diameters cannot be too small, since very thin fins may break in the process. Hence the fin length is typically on the order of tens of millimeters, resulting in bulky heat sinks. The present invention introduces fine-structure designs and their manufacturing methods to heat sinks, to tremendously increase the contact surface with air, to increase heat flux density across the heat sink, to reduce the drag force on the flow of the fluid medium around the heat sink, and at the same time to keep the heat sink compact, with a low profile. As a result of their low profile, multiple fine-structure patterned (herein FSP) heat sinks of the present invention can be stacked up for greater overall heat transfer, while retaining compact dimensions. The present invention creates fine-structure patterned fins that protrude from the base surfaces of a heat sink.
- Research has also been performed on the use of pin fin geometry in heat sinks immersed in liquids such as water. Such heat sinks, however, have small aspect ratios since water cools down the pin fins rapidly. For example, see J. J. Wei, “Effects of Fin Geometry on Boiling Heat Transfer from Silicon Chips with Micro-Pin-Fins Immersed in FC-72,” International Journal of Heat and Mass Transfer, 46 (2003) 4059-4070. Such heat sinks are not suitable for use for cooling in air which is a poor heat conductor.
- One embodiment of the invention is directed to a device for transferring heat comprises a base member and a first array of pin fins supported by the base member, the pin fins having an aspect ratio of not less than about 10, and the pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, either one or both of the base member and pin fins comprising a metallic or semiconductor material.
- Another embodiment of the invention is directed to a device for transferring heat comprises a heat spreader; and a plurality of heat transfer elements supported by and thermally connected to the heat spreader, each element comprising a base member, and an array of pin fins supported by the base member, the pin fins having an aspect ratio of not less than about 10 and the pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, the base members and/or pin fins comprising a metallic or semiconductor material.
- Yet another embodiment of the invention is directed to a device for transferring heat comprises a set of fins arranged in a radial pattern; and a plurality of heat transfer elements supported on the fins, each element comprising a base member, and an array of pin fins supported by the base member, the pin fins having an aspect ratio of not less than about 10, and the pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, the base members and/or pin fins comprising a metallic or semiconductor material.
- According to yet another embodiment of the invention, a device that dissipates heat in air is made as follows. A substrate is provided. A pattern is formed on the substrate, the pattern having holes therein or in the form of dots with cross-sectional dimensions of not more than about 0.3 mm. Pin fins supported by the substrate are formed, where the pin fins have an aspect ratio of not less than about 1.0, and not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length. Either one or both of the base member and pin fins comprise a metallic or semiconductor material. The pattern is then removed.
- One more embodiment of the invention is directed to a method for transferring heat. The method comprises providing a device for transferring heat which comprises a base member and a first array of pin fins supported by the base member, the pin fins having an aspect ratio of not less than about 10, and the pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, the base member and/or pin fins comprising a metallic or semiconductor material. The method includes locating the base member relative to an object to transfer heat between the pin fins and the object and so that the pin fins are in contact with a gaseous environment to enable heat transfer between the pin fins and the gaseous environment.
-
FIG. 1A exemplifies a conventional pin-fin heat sink of the prior art, made of a thermally-conductive metal such as Aluminum Alloy 6063. -
FIG. 1B is a rear view of the conventional pin-fin heat sink ofFIG. 1A . -
FIG. 1C illustrates a conventional radial-type prior art heat sink. -
FIG. 2 illustrates another prior art heat transfer mechanism that transports heat via a heat pipe to the finned heat sinks, where the heat is dissipated to air. -
FIGS. 3A , 3B, and 3C illustrate a representative geometrical model of a heat sink of one embodiment of the present invention, whose base surface is patterned with fine-scale pin fins. -
FIGS. 3D , 3E, and 3F illustrate three kinds of pin fin cross-sections that are intended to increase the contact surface with air in embodiments of the present invention. -
FIG. 3G illustrates one kind of pin fin cross-section to introduce the definition of equivalent diameter. -
FIG. 3H shows a perspective view of an FSP heat sink of an embodiment of the present invention. -
FIG. 3I presents a single pin fin from an FSP heat sink of an embodiment of the present invention, for the purpose of depicting its thermal conduction properties. -
FIG. 4 illustrates a semiconductor fabrication process flow for making a micro-structure pin fin heat sink of an embodiment of the present invention. -
FIG. 5 exemplifies a process for fabricating nano-scale carbon tubes as pin fins on a thermally conductive substrate. -
FIG. 6 shows an FSP heat sink of an embodiment of the present invention, mounted to a heat spreader for transferring heat to air. -
FIG. 7A shows multiple FSP heat sinks inserted or attached to a U-shaped heat spreader to multiply the heat dissipation capacity to air. -
FIG. 7B shows composite metal layers deposited on the back side of an FSP heat sink for purposes of metal bonding. -
FIG. 7C shows a highly thermally conductive material that is metallically bonded to an FSP heat sink. -
FIG. 7D illustrates another embodiment of the present invention, in which an assembly of multiple FSP heat sinks is used to multiply the heat dissipation capacity of the system to air. -
FIG. 8 shows a fan that has been added to the heat sink bank ofFIG. 7A to further increase heat convection. -
FIG. 9A illustrates the momentum and thermal boundary layers, respectively, of a natural convection flow along a smooth vertical wall. -
FIG. 9 B shows the natural convection flow between two FSP heat sinks. -
FIG. 10 shows the forced convection flow between two FSP heat sinks. -
FIGS. 11A and 11B show an embodiment of the present invention in which the base of the heat sink has perforated holes for increasing flow velocity perpendicular to the base, in order to enhance the heat transfer. -
FIGS. 12A and 12B show an embodiment of the present invention in which heat gutters are created to facilitate carrying heat away from the pin fins. - At least some of the embodiments herein include a compact, low-profile heat sink with fine-structure patterned pin fins for increased heat transfer. These embodiments introduce fine-structure designs and their manufacturing methods to the field of heat sinks, to tremendously increase the contact surface with air, to increase heat flux density across the heat sink, to reduce the drag force on the flow of the fluid medium around the heat sink, and at the same time to keep the heat sink compact, with a low profile. The embodiments of the present invention have applications in the removal of heat from electronic components and devices, as well as any application where efficient heat transfer is desired. The fine-structure patterned (FSP) pin fins retain the typical aspect ratio of conventional pin fin heat sinks of the prior art, and also have a similar relationship between pin fin diameter and pin fin spacing. However, with much smaller pin fin diameter, the FSP pin fin heat sink of the present invention has many more pin fins, when compared to a conventional heat sink of similar base area, and the FSP pin fins are of greatly reduced height. This results in the FSP pin fin heat sink achieving heat transfer that is comparable to that of a conventional heat sink of similar base area, but with the FSP pin fins having a greatly reduced height dimension. Alternatively, an FSP pin fin heat sink can achieve much greater heat transfer, when compared to a conventional heat sink of similar volume. Multiple FSP pin fin heat sinks can be affixed to a common heat spreader, and it is also possible to fabricate FSP pin fin heat sinks with pin fins on both sides of a common base plate.
- In some embodiments, a method is described for using semiconductor processing techniques to fabricate micro-structure PSP fin pin heat sinks, from a variety of thermally conductive substrate materials, including metals and semiconductor material. An alternative method is described for fabricating nano-scale carbon nano-tubes, or metallic nano-wires as pin fins on a thermally conductive substrate.
-
FIG. 1A shows a perspective view of a conventional prior art heat sink that has pin fins protruding out of a metal base.FIG. 1B is a rear view of the heat sink ofFIG. 1A . The diameter or thickness of the pin fins is in the range of a few millimeters. The aspect ratio S of a pin is defined as the length L of a pin divided by its characteristic diameter De. The aspect ratio for the pin fins of a typical prior art heat sink with large diameters (of the order of a millimeter or more) obtained by means of forging or extrusion is on the order of ten. Therefore the typical length of the pin fins is in the range of tens of millimeters, resulting in conventional heat sinks being bulky. Especially for natural convection systems that need larger contact surface with air, heat sinks typically dominate the overall volume of a power generating electronic device. For example, about 75% of the electrical power consumed by Light Emitting Diode (LED) chips becomes a localized thermal heat source. It is critical for LEDs to reduce temperature, in order to ensure their performance and reliability. Heat sinks are usually used to dissipate heat from the heat source to air. -
FIG. 1C shows another conventional prior art heat sink, using a radial arrangement of fins. The width and length of the pins are on the order of tens of millimeters. -
FIG. 2 illustrates another prior art heat transfer mechanism that transports heat via one or more heat pipes to the finned heat sinks where the heat is dissipated to air. -
FIGS. 3A (front view) and 3B (side view) show an embodiment of the present invention, with a large number of pin fins (301) protruding out of a thermally conductive plate or base (303). Either one or both of the pin fins (301) plate (or base) (303) may comprise a metallic or semiconductor material. The length of each pin fin is L.FIG. 3C shows another embodiment of the present invention in which pin fins protrude from both the top and bottom surfaces of the thermally conductive base plate. -
FIGS. 3D to 3F illustrate multiple embodiments of the pin fins of the present invention, with a variety of cross-sections. Non-circular cross-sections are implemented to increase the area of the contact surface with air. The pitch between pin fins is shown as dimension b. P denotes the length or dimension of the perimeter of a cross-section of the pin fin. For non-circular pin fin, the equivalent diameter De is defined as P divided by π. Thus, pin fins with differing cross-section shapes, but with the same perimeter dimension P, will have the same equivalent diameter De, and will also have the same equivalent diameter De as a pin fin with a circular cross section that has a circumference dimension equal to P. Note that for non-circular cross-section shapes, the effective diameter De will be larger than that of a minimal-size circle that just barely encloses the cross-section shape, as depicted inFIG. 3G . - The lattice configurations shown in
FIGS. 3D to 3F are square for illustrative purpose. Other lattice configurations such as triangles and rectangles or other polygons are within the scope of the present invention. - Suppose the base plate (303) is a square with dimension W for each side.
-
- As an example, if
-
- and S=15, then M=22.
- Equation (2) shows that for two heat sink designs that are required to have the same air contact surface per unit base area, the required length of the pin fin (L) is inversely proportional to the equivalent diameter of the pin fin (De), if the lattice ratio b/De is fixed. For example, if the same contact surface with air is desired for both a conventional prior-art heat sink and the fine-structure patterned heat sink of the present invention, both of them having the same base size, the same pin fin aspect ratio of 15, and the same lattice ratio, then the length of the conventional pin fin of
diameter 2 mm is 30 mm, but that of a pin fin having a diameter of 50 microns from a fine-structure pattern (FPS) heat sink is only 0.75 mm. Therefore the height of an FPS heat sink in the embodiment ofFIGS. 3A-3H of the present invention is tremendously reduced without sacrificing the amount of contact surface with the surrounding air. - The fine-structure pin fins of the present invention can be created by either etching or chemical growth processes. Here two methods are introduced as examples, to illustrate processes for making fine-structure pin fins from a piece of thermally-conductive plate as a base.
- As illustrated in
FIG. 4 , a highly thermally-conductive material (401) such as silicon, having a thermal conductivity of about 149 w/m° C., is selected as a substrate, as indicated inStep 1. The thickness of silicon or poly-silicon is of the order of a few millimeters. On top of the substrate is formed a silicon dioxide layer (408) of a thickness of a few micrometers grown by thermal oxidation or chemical vapor deposition. Photoresist (403) is spin-coated onto one surface of the silicon wafer as indicated inStep 2. Then photolithography is used to expose a fine-structure pattern into the photoresist, as indicated inStep 3. The optically exposed area of the photoresist (if positive photoresist is used) is washed out during the development. It is fairly easy to create photoresist dots (indicated by 405) with sizes ranging from a few microns to a few tens of microns, by using modern lithography technology. InStep 4, hydroflouride acid is used to chemically etch the silicon dioxide layer (408) that is not covered by the photoresist (405), which is then removed afterwards. Then a dry etching method, such as Deep Reactive Ion Etching (DRIE) is applied to dig deep recesses (as indicated by 406 in Step 5) in the area not covered by silicon dioxide (408). Current high-rate DRIE that directionally etches away silicon out ofsubstrate 401 to create deep and steep holes, walls and trenches is able to etch pin fins having aspect ratios of 10 to 30. Bosch process that alternates repeatedly between isotropic ion etching and side-wall passivation is one of the most recognized DRIE technologies. Chemical wet etching is a cheaper alternative process that can also be implemented for aspect ratios less than 10. Finally, the remaining silicon dioxide is removed and a fine-structure patterned plate with an array of pin fins is then created, as shown in the perspective view ofFIG. 3H . The above procedures can be applied again to the other side of the substrate (401) to create FSP pin fins on both sides of the base plate or substrate, as shown inFIG. 3C . The resulting double-sided FSP heat sink is even more compact and more heat efficient. - A thermally conductive plate or wafer (501), either made of metals such as copper (thermal conductivity K=398 w/m k) or aluminum 1100 (K=220 w/398/mk), or semiconductor materials such as silicon and SiC, is first selected, as indicated by
Step 1 inFIG. 5 . In Step 2 a thin polymer film (503) is coated onto the plate surface. In Step 3 a nano-scale pattern is introduced onto the polymer film (503) by either nano-scaled methods such as nano-imprinting from a template with a nano-scale pattern, or via UV photolithography. The patterned polymer film is shown asitem 505 with voids (506) in the film. Then growing seeds (507) such as Fe2O3 for later growing of nano-tubes are deposited into the voids (506), as shown inStep 4. The unwanted polymer residual is removed inStep 5, leaving the growing seeds (507) exposed on the surface of the substrate (501). Then single-wall or multi-wall carbon nano-tubes are grown on the top of the growing seeds (507) by either chemical vapor deposition or wet chemical growth as shown inStep 6. It is well-known that carbon nano-tubes have thermal conductivity on the order of a few times to tens of times that of copper. The diameter of a carbon nano-tube ranges from a few nanometers to tens of nanometers. The above growing procedure can also be applied to the other side of the substrate (501). Also represented inFIG. 3C is a heat sink with nano-tubes grown on both sides, that is expected to provide super-efficient heat transfer. - Processes similar to the ones described above for growing carbon nano-tubes can also be applied to growing nano-wires, composed of metals such as transition metals, copper (Cu), silver (Ag, and gold (Au), as well as semiconductors such as silicon (Si), germanium (Ge), and indium arsenide (InAs), all having good thermal conductivity. Methods capable of growing the pin fins (301) in
FIG. 3B , with diameters ranging from a few nanometers up to the sub-millimeter range, with a pin fin aspect ratio greater than about three or about ten, are all within the scope of the present invention. Preferably the nanotubes and nanowires have diameters of not more than 1 micron. - Molding methods may also be used for making pin fins having aspect ratio less than 3, but have a challenge for larger aspect ratio.
- Laser ablation that sends high power laser pulses to ablate material over a surface line by line can also be a feasible method to create high aspect fine-structure fin pins out of a thermal conductive planar material though the production speed may be only moderate.
- Other methods that are able to create fine-structure fins are also within the scope of the present inventions.
-
FIG. 3I shows a single pin fin taken from the heat sink inFIG. 3H . The temperature of the heat sink base (306) is Tb, whereas the temperature of the air or fluid around the heat sink is T∞. The temperature distribution along the length of the pin fin, the heat flux from the heat sink base to the pin fin, and the pin fin heat transfer efficiency, respectively, are defined as follows (See Gregory Nellis & Sanford Klein, Heat Transfer, Cambridge University Press, 2009.): -
- where:
- Tb=base temperature
- T∞=fluid (air) temperature
- per=perimeter of the pin fin
- L=length of the pin fin
- T=temperature
-
-
h =heat transfer coefficient - Ac=cross-sectional area of the pin fin
- k=thermal conductivity
- {dot over (q)}fin=pin fin heat transfer rate
- x=position (relative to base of pin fin)
-
- Generally the aspect ratio of a pin fin is large. The heat convection from the end tip of a pin fin is much smaller than that along the pin. Therefore, equations (3)-(5) can be simplified to:
-
- For free convection air flow whose heat transfer coefficient is less than 2 w/m2k and forced air flow whose heat transfer coefficient is generally less than 200 w/m2k, mL in equation (7) is much less than 1. Equation (7) and (8) are therefore approximated to
-
{dot over (q)} fin=π(Tb−T∞)Sh D e 2 Equation (9) -
ηfin→1 Equation (10) - Multiplying b−2 to Equation (9), the heat flux across the heat sink's unit base area to the pin fins is π(Tb−T∞)S
h (De/b)2, which is dependent on the lattice ratio b/De. This concludes that the heat flux across the heat sink's unit base area for a FSP heat sink is same as that for a conventional bulk heat sink as long as the lattice ratio is kept same. Furthermore Equation 9 illustrates the heat dissipation to air per pin fin is proportional to aspect ratio S for free convection and forced air flows. Therefore it is desirable in the present invention to make aspect ratio as large as possible by methods such as modern DRIE, or by using nanotubes and nanowires as described above. In one embodiment, the aspect ratio S of the pin fins is not less than about 10. In another embodiment, the aspect ratio S of the pin fins is not less than about 20. The pin fins preferably have equivalent diameter of not more than about 0.3 mm, and length of not more than about 3 mm. In one embodiment, the length of the pin fins are less than about 1 mm. In still another embodiment, the pin fins preferably have equivalent diameter of not more than about 0.1 mm. The heat transfer coefficient of a liquid flow is generally one or two orders higher in magnitude than that of an air flow. Thus the temperature quickly drops along the pin fin so that a high aspect ratio (>5) has little additional benefit for heat dissipation to surrounding liquid. - Air blowing across the pin fins either by forced flow or by natural convection has a pressure drop due to the drag force induced by the fins. It is desirable that the pressure drop be as small as possible for a heat transfer device. The total drag force FD induced by the pin fins is
-
- where CD=drag coefficient depending on geometry of pin fins, Reynold's number, as well as other factors
-
- AP=total projected area of the pin fins, facing the flow
- ρ=air density
- U∞=air free stream velocity
- The projected area of the pin fins per unit length of heat sink base is
-
- Therefore, the drag force per unit length of heat sink base is proportional to L, assuming that the pin fin shapes are the same, and that the lattice ratio
-
- is held constant for both bulk and FSP heat sinks, which is both achievable and practical. That reveals that the FSP heat sink has much less drag force than that of the conventional prior art heat sink.
- In summary, based on the above illustrations and equations, the FSP heat sink of the present invention is not only one to two orders of magnitude smaller in pin fin length when compared to conventional prior art heat sinks, but is also superior in drag force reduction. An FSP heat sink as shown in
FIG. 3H with pin fin length less than 1.0 mm should perform in heat transfer as good as a conventional prior art heat sink with pin fin length on the order of tens of millimeters, as shown inFIG. 1A . -
FIG. 6 shows an FSP heat sink (601) mounted directly onto the back side of a heat spreader (603) that has a heat source (605) on its front side. As compared toFIG. 1A , the FSP heat sink (601) is low-profiled and has a much smaller thickness. Because of their low profile, multiple FSP heat sinks (703), as shown inFIG. 7A , can be stacked up by tightly affixing them, or metallically bonding them to a highly thermally conductive metal U-shaped heat spreader (701), as long as the space between the FSP heat sinks is large enough to prevent degradation of their individual heat transfer coefficients. - The densely populated pin fins of an FSP heat sink are capable of dissipating a large amount of heat to air. In some situations the heat is transferred to the pin fins via the edges of the heat sink base such as is illustrated by
item 705 inFIG. 7A anditem 710 inFIGS. 7B and 7C . In some cases, as illustrated inFIGS. 7B and 7C , the base (720) of the FSP heat sink may be very thin, especially if a semiconductor wafer is being used as the base material, so that heat conduction is limited to the edge areas of the base (720). In this case, where such contact arrangement of the base (720) becomes the bottle neck for heat conduction, a highly thermally conductive material (715) such as copper can be metallically bonded (712) to the base (720) to increase the area for heat conduction to the pin fins (713). Thin composite metallic layers (719) such as Ti/Au/Sn may be deposited by either electrochemical plating or e-beam evaporation to the back side of the FSP heat sink as shown inFIG. 7B . Then the FSP heat sink assemblies ofFIG. 7C can be used to replace the FSP heat sinks (703) inFIG. 7A . - The FSP heat sink bank in
FIG. 7A is able to draw a lot of heat from the heat source (706). A fan (801) inFIG. 8 can be mounted on one side of the heat sink bank in the embodiment ofFIG. 7A as well as other embodiments herein to increase the flow of air past the heat sink bank, thereby providing further improvement in heat transfer. - The flow field and the material properties of the surrounding fluid, as well as other minor parameters, determine the heat transfer coefficient ht in equation (1), and its corresponding dimensionless Nusselt number Nu.
FIG. 9A pictorially represents the flow field and temperature profile of a laminar natural convection air flow along a heated vertical plate (901) with a temperature Tw. δm (903) and δt (905) indicate the momentum and thermal boundary layers, respectively. The velocity profile and the thermal distribution are indicated by 907 and 909, respectively. As the surface of plate is densely populated with fine-structure patterned fins, the momentum and thermal boundary layer are expected to grow thicker, more quickly than that of a smooth plate, due to more vigorous transport vertical to the plates.items FIG. 9B sketches the flow field profiles.FIG. 10 pictorially illustrates how forced convection flow fields are developed between two FSP plates. By scaling laws and empirical data, the heat transfer coefficient of an FSP plate is expected to be of the same order of magnitude as that of smooth plate. However, the FSP plate has a contact surface area with air that is at least two orders of magnitude greater than that of a smooth plate, leading to a proportional increase in overall heat transfer. - Perforated holes, as indicated by
item 1101 inFIG. 11A , may be drilled through the base plate (1105) of the FSP heat sink (1102), to generate a flow perpendicular to the base plate's surface, thereby causing thermal boundary layer bursting or circulation, leading to increased flow turbulence for enhanced heat convection. - In addition to the perforated holes (1101) in
FIG. 11A , the heat gutters (1201) shown inFIGS. 12A and 12B are created between sub-arrays or groupings of densely populated pin fins (1202) to facilitate carrying heat away from pins. Resulting from patterning during the fabrication process, heat gutter shape and geometry can be arranged arbitrarily among the sub-arrays or groupings of densely populated pin fins (1202) over the heat sink's base plate (1204), for optimal heat transfer. - The above FSP heat sink can be used conversely to suck heat from the surrounding media to provide heat to an object. Due to large contact surface provided by FSP fins, the transient time for the heated body to reach thermal equilibrium is reduced. For example, FSP heat sink in the present invention can be attached to a biological culture tube or a chemical beaker that endo-thermal reaction is taking place to timely keep the testing sample in constant temperature by quickly absorbing heat from the surrounding heat reservoir.
- Resulting from that fact of that the surface area of the FSP heat sink is one to two orders larger in magnitude larger than that of a plane surface. As FSP heat sink is attached to an elevated hot body, a FSP heat sink can radiate a significant amount of heat by thermal radiation as it is attached to an elevated hot body. Conversely, the FSP can be used to absorb radiation energy from the environment to heat up a cooler body. Thus, the heat transfer can take place by radiation, as in black body radiation, as well as by conduction and/or convection. All in all the FSP heat sink is benefited by its low profile.
- Pin fins have been used in the present invention to illustrate the advantages of the fine-structure patterned heat sink. Other fin shapes such as straight plate fins and curved plate fins with either or both of their width and thickness less than one millimeter and high aspect ratio (defined by height divided by either of width and thickness, whichever is the smaller) and are directed built by patterning from a thermal conductive substrate are also within the scope of the present invention.
- While the invention has been described above by reference to various embodiments, it will be understood that changes and modifications may be made without departing from the scope of the invention, which is to be defined only by the appended claims and their equivalents.
Claims (23)
1. A device for transferring heat comprising:
a base member; and
a first array of pin fins supported by said base member, said pin fins having an aspect ratio of not less than about 10, and said pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, either one or both of said base member and pin fins comprising a metallic or semiconductor material.
2. The device of claim 1 , said pin fins having an aspect ratio of not less than about 20.
3. The device of claim 1 , said pin fins having a perimeter P, wherein said equivalent diameter of the pin fins is P/π.
4. The device of claim 1 , said pin fins having a length or lengths less than about 1 mm.
5. The device of claim 1 , said pin fins having an equivalent diameter less than about 0.1 mm.
6. The device of claim 1 , said pin fins created by a Deep Reactive Ion Etching process.
7. The device of claim 1 , further comprising a second array of pin fins supported by the base member.
8. The device of claim 1 , the base member comprising a layer of silicon material, said device further comprising a second member bonded to the base member for conducting heat between the pin fins and the second member through the base member.
9. The device of claim 1 , wherein said base member defines one or more holes therein for enhancing air flow turbulence and heat convection to transfer heat.
10. The device of claim 1 , wherein said first array of pin fins arranged in sub-arrays with gutters between the sub-arrays for enhancing heat convection to transfer heat.
11. The device of claim 1 , further comprising a fan for generating air flow in spacings between the pin fins.
12. A device for transferring heat comprising:
a heat spreader; and
a plurality of heat transfer elements supported by and thermally connected to said on said heat spreader, each element comprising a base member, and an array of pin fins supported by said base member, said pin fins having an aspect ratio of not less than about 10 and said pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, said base members and pin fins comprising a metallic or semiconductor material.
13. The device of claim 12 , said base members comprising plates with edges, said plurality of heat transfer elements supported by and thermally connected to said on said heat spreader through the edges of said base members of the elements.
14. A device for transferring heat comprising:
a set of fins arranged in a radial pattern; and
a plurality of heat transfer elements supported on said fins, each element comprising a base member, and an array of pin fins supported by said base member, said pin fins having an aspect ratio of not less than about 10, and said pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, said base members and pin fins comprising a metallic or semiconductor material.
15. A method for making a device that dissipates heat in air, comprising:
providing a substrate;
forming a pattern on the substrate, said pattern having holes therein or in the form of dots with cross-sectional dimensions of not more than about 0.3 mm; and
causing pin fins supported by the substrate to be formed, said pin fins having an aspect ratio of not less than about 10, and said pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, said base member and pin fins comprising a metallic or semiconductor material; and
removing said pattern.
16. The method of claim 15 , wherein said pattern is in the form of dots and formed by means of a photolithographic process, and said pin fins are formed by means of an etching process.
17. The method of claim 15 , wherein said pin fins are formed by means of a Deep Reactive Ion etching process.
18. The method of claim 15 , wherein said pattern have holes therein and formed by means of an UV photolithographic or nano-imprinting process, said causing including depositing growing seeds in said holes, and growing nanotubes or nanowires on top of the seeds.
19. The method of claim 18 , wherein said nanotubes or nanowires have diameters not more than 1 micron.
20. A method for transferring heat, comprising:
providing a device for transferring heat which comprises:
a base member; and
a first array of pin fins supported by said base member, said pin fins having an aspect ratio of not less than about 10, and said pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, said base member and pin fins comprising a metallic or semiconductor material;
locating said base member relative to an object to transfer heat between the pin fins and the object and so that said pin fins are in contact with a gaseous environment to enable heat transfer between the pin fins and the gaseous environment.
21. The method of claim 20 , wherein heat is transferred from the object to the pin fins, and said pin fins are in contact with air.
22. The method of claim 20 , wherein heat is transferred from the pin fins to the object, and said pin fins are in contact with air.
23. The method of claim 20 , wherein heat is by means of conduction or radiation or both.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/049,707 US20120234519A1 (en) | 2011-03-16 | 2011-03-16 | Low-Profile Heat Sink with Fine-Structure Patterned Fins for Increased Heat Transfer |
| US14/670,947 US20150214132A1 (en) | 2011-03-16 | 2015-03-27 | Low-Profile Heat Sink with Fine-Structure Patterned Fins for Increased Heat Transfer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/049,707 US20120234519A1 (en) | 2011-03-16 | 2011-03-16 | Low-Profile Heat Sink with Fine-Structure Patterned Fins for Increased Heat Transfer |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US14/670,947 Continuation US20150214132A1 (en) | 2011-03-16 | 2015-03-27 | Low-Profile Heat Sink with Fine-Structure Patterned Fins for Increased Heat Transfer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20120234519A1 true US20120234519A1 (en) | 2012-09-20 |
Family
ID=46827532
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/049,707 Abandoned US20120234519A1 (en) | 2011-03-16 | 2011-03-16 | Low-Profile Heat Sink with Fine-Structure Patterned Fins for Increased Heat Transfer |
| US14/670,947 Abandoned US20150214132A1 (en) | 2011-03-16 | 2015-03-27 | Low-Profile Heat Sink with Fine-Structure Patterned Fins for Increased Heat Transfer |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US14/670,947 Abandoned US20150214132A1 (en) | 2011-03-16 | 2015-03-27 | Low-Profile Heat Sink with Fine-Structure Patterned Fins for Increased Heat Transfer |
Country Status (1)
| Country | Link |
|---|---|
| US (2) | US20120234519A1 (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9091402B2 (en) | 2012-03-28 | 2015-07-28 | Milwaukee Electric Tool Corporation | Area light |
| US9157585B2 (en) | 2012-03-28 | 2015-10-13 | Milwaukee Electric Tool Corporation | Area light |
| JP2016090212A (en) * | 2014-11-11 | 2016-05-23 | 株式会社デンソー | Heat exchange device and manufacturing method of heat exchange device |
| WO2016164410A1 (en) * | 2015-04-10 | 2016-10-13 | Maxwell Technologies, Inc. | Reduced temperature energy storage device |
| US20170003009A1 (en) | 2015-07-01 | 2017-01-05 | Milwaukee Electric Tool Corporation | Area light |
| USD779694S1 (en) | 2013-08-27 | 2017-02-21 | Milwaukee Electric Tool Corporation | Portable light |
| US20170236770A1 (en) * | 2012-02-02 | 2017-08-17 | International Business Machines Corporation | Compliant pin fin heat sink and methods |
| US9851088B2 (en) | 2015-02-04 | 2017-12-26 | Milwaukee Electric Tool Corporation | Light including a heat sink and LEDs coupled to the heat sink |
| USD816252S1 (en) | 2016-05-16 | 2018-04-24 | Milwaukee Electric Tool Corporation | Light |
| CN109378303A (en) * | 2018-08-21 | 2019-02-22 | 华北电力大学(保定) | Micro-needle rib-cluster array micro-channel micro heat exchanger |
| USD850689S1 (en) | 2015-04-24 | 2019-06-04 | Milwaukee Electric Tool Corporation | Stand light |
| US10323831B2 (en) | 2015-11-13 | 2019-06-18 | Milwaukee Electric Tool Corporation | Utility mount light |
| WO2020232178A1 (en) * | 2019-05-14 | 2020-11-19 | Holo, Inc. | Devices, systems and methods for thermal management |
| US20220010952A1 (en) * | 2014-07-04 | 2022-01-13 | Yixing ZHANG | Heat-dissipation device of led |
| US20220030738A1 (en) * | 2020-07-27 | 2022-01-27 | Dupont Electronics, Inc. | Heat sink for electronic devices |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD803663S1 (en) | 2014-11-20 | 2017-11-28 | Green Inova Lighting Technology Limited | Bracket |
| JP2017130633A (en) * | 2016-01-22 | 2017-07-27 | 豊田合成株式会社 | Light-emitting device |
| GB2552956A (en) * | 2016-08-15 | 2018-02-21 | Hs Marston Aerospace Ltd | Heat exchanger device |
| US11069554B1 (en) * | 2020-01-22 | 2021-07-20 | Applied Materials, Inc. | Carbon nanotube electrostatic chuck |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5852548A (en) * | 1994-09-09 | 1998-12-22 | Northrop Grumman Corporation | Enhanced heat transfer in printed circuit boards and electronic components thereof |
| US5886870A (en) * | 1995-11-07 | 1999-03-23 | Kabushiki Kaisha Toshiba | Heat sink device |
| US20050092464A1 (en) * | 2003-11-04 | 2005-05-05 | Charles Leu | Heat sink with carbon nanotubes and method for manufacturing same |
| US20050129928A1 (en) * | 2003-09-16 | 2005-06-16 | Koila, Inc. | Nanostructure augmentation of surfaces for enhanced thermal transfer with increased surface area |
| US20060113065A1 (en) * | 2004-12-01 | 2006-06-01 | International Business Machines Corp. | Heat sink made from a singly extruded heatpipe |
| US20060255452A1 (en) * | 2005-05-10 | 2006-11-16 | Shih-Yuan Wang | Cooling devices that use nanowires |
| US20070159798A1 (en) * | 2006-01-09 | 2007-07-12 | Chun-Chi Chen | Heat dissipation device having phase-changeable medium therein |
| US8266802B2 (en) * | 2008-06-18 | 2012-09-18 | International Business Machines Corporation | Cooling apparatus and method of fabrication thereof with jet impingement structure integrally formed on thermally conductive pin fins |
-
2011
- 2011-03-16 US US13/049,707 patent/US20120234519A1/en not_active Abandoned
-
2015
- 2015-03-27 US US14/670,947 patent/US20150214132A1/en not_active Abandoned
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5852548A (en) * | 1994-09-09 | 1998-12-22 | Northrop Grumman Corporation | Enhanced heat transfer in printed circuit boards and electronic components thereof |
| US5886870A (en) * | 1995-11-07 | 1999-03-23 | Kabushiki Kaisha Toshiba | Heat sink device |
| US20050129928A1 (en) * | 2003-09-16 | 2005-06-16 | Koila, Inc. | Nanostructure augmentation of surfaces for enhanced thermal transfer with increased surface area |
| US20050092464A1 (en) * | 2003-11-04 | 2005-05-05 | Charles Leu | Heat sink with carbon nanotubes and method for manufacturing same |
| US20060113065A1 (en) * | 2004-12-01 | 2006-06-01 | International Business Machines Corp. | Heat sink made from a singly extruded heatpipe |
| US20060255452A1 (en) * | 2005-05-10 | 2006-11-16 | Shih-Yuan Wang | Cooling devices that use nanowires |
| US20070159798A1 (en) * | 2006-01-09 | 2007-07-12 | Chun-Chi Chen | Heat dissipation device having phase-changeable medium therein |
| US8266802B2 (en) * | 2008-06-18 | 2012-09-18 | International Business Machines Corporation | Cooling apparatus and method of fabrication thereof with jet impingement structure integrally formed on thermally conductive pin fins |
Cited By (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170236770A1 (en) * | 2012-02-02 | 2017-08-17 | International Business Machines Corporation | Compliant pin fin heat sink and methods |
| US9997435B2 (en) * | 2012-02-02 | 2018-06-12 | International Business Machines Corporation | Compliant pin fin heat sink and methods |
| US9157585B2 (en) | 2012-03-28 | 2015-10-13 | Milwaukee Electric Tool Corporation | Area light |
| US9091402B2 (en) | 2012-03-28 | 2015-07-28 | Milwaukee Electric Tool Corporation | Area light |
| USD779694S1 (en) | 2013-08-27 | 2017-02-21 | Milwaukee Electric Tool Corporation | Portable light |
| US20220010952A1 (en) * | 2014-07-04 | 2022-01-13 | Yixing ZHANG | Heat-dissipation device of led |
| JP2016090212A (en) * | 2014-11-11 | 2016-05-23 | 株式会社デンソー | Heat exchange device and manufacturing method of heat exchange device |
| US9851088B2 (en) | 2015-02-04 | 2017-12-26 | Milwaukee Electric Tool Corporation | Light including a heat sink and LEDs coupled to the heat sink |
| US11796166B1 (en) | 2015-02-04 | 2023-10-24 | Milwaukee Electric Tool Corporation | Light |
| US12247729B2 (en) | 2015-02-04 | 2025-03-11 | Milwaukee Electric Tool Corporation | Light |
| US10066827B2 (en) | 2015-02-04 | 2018-09-04 | Milwaukee Electric Tool Corporation | Light including a heat sink and LEDs coupled to the heat sink |
| US20180340683A1 (en) | 2015-02-04 | 2018-11-29 | Milwaukee Electric Tool Corporation | Light |
| US11536444B2 (en) | 2015-02-04 | 2022-12-27 | Milwaukee Electric Tool Corporation | Light |
| US11415310B2 (en) | 2015-02-04 | 2022-08-16 | Milwaukee Electric Tool Corporation | Light including a heat sink and LEDs coupled to the heat sink and light intensity management thereof |
| US11408605B2 (en) | 2015-02-04 | 2022-08-09 | Milwaukee Electric Tool Corporation | Light |
| US10386057B2 (en) | 2015-02-04 | 2019-08-20 | Milwaukee Electric Tool Corporation | Light including a heat sink and LEDs coupled to the heat sink |
| US10627100B2 (en) | 2015-02-04 | 2020-04-21 | Milwaukee Electric Tool Corporation | Light |
| US9653824B2 (en) | 2015-04-10 | 2017-05-16 | Maxwell Technologies, Inc. | Reduced temperature energy storage device |
| WO2016164410A1 (en) * | 2015-04-10 | 2016-10-13 | Maxwell Technologies, Inc. | Reduced temperature energy storage device |
| US11112096B2 (en) | 2015-04-24 | 2021-09-07 | Milwaukee Electric Tool Corporation | Stand light |
| US11306904B1 (en) | 2015-04-24 | 2022-04-19 | Milwaukee Electric Tool Corporation | Stand light |
| USD1080983S1 (en) | 2015-04-24 | 2025-06-24 | Milwaukee Electric Tool Corporation | Stand light |
| USD1037521S1 (en) | 2015-04-24 | 2024-07-30 | Milwaukee Electric Tool Corporation | Stand light |
| USD902463S1 (en) | 2015-04-24 | 2020-11-17 | Milwaukee Electric Tool Corporation | Stand light |
| US12000572B2 (en) | 2015-04-24 | 2024-06-04 | Milwaukee Electric Tool Corporation | Stand light |
| US10907809B2 (en) | 2015-04-24 | 2021-02-02 | Milwaukee Electric Tool Corporation | Stand light |
| US11725807B2 (en) | 2015-04-24 | 2023-08-15 | Milwaukee Electric Tool Corporation | Stand light |
| USD883549S1 (en) | 2015-04-24 | 2020-05-05 | Milwaukee Electric Tool Corporation | Stand light |
| US11530799B2 (en) | 2015-04-24 | 2022-12-20 | Milwaukee Electric Tool Corporation | Stand light |
| USD850689S1 (en) | 2015-04-24 | 2019-06-04 | Milwaukee Electric Tool Corporation | Stand light |
| US10378739B2 (en) | 2015-04-24 | 2019-08-13 | Milwaukee Electric Tool Corporation | Stand light |
| US11149930B2 (en) | 2015-07-01 | 2021-10-19 | Milwaukee Electric Tool Corporation | Area light |
| USD936880S1 (en) | 2015-07-01 | 2021-11-23 | Milwaukee Electric Tool Corporation | Light |
| US10775032B2 (en) | 2015-07-01 | 2020-09-15 | Milwaukee Electric Tool Corporation | Area light |
| US20170003009A1 (en) | 2015-07-01 | 2017-01-05 | Milwaukee Electric Tool Corporation | Area light |
| US11619372B2 (en) | 2015-07-01 | 2023-04-04 | Milwaukee Electric Tool Corporation | Area light |
| USD1020062S1 (en) | 2015-11-13 | 2024-03-26 | Milwaukee Electric Tool Corporation | Light |
| USD1020061S1 (en) | 2015-11-13 | 2024-03-26 | Milwaukee Electric Tool Corporation | Light |
| US11448383B2 (en) | 2015-11-13 | 2022-09-20 | Milwaukee Electric Tool Corporation | Utility mount light |
| US11525562B2 (en) | 2015-11-13 | 2022-12-13 | Milwaukee Electric Tool Corporation | Utility mount light |
| US10753585B2 (en) | 2015-11-13 | 2020-08-25 | Milwaukee Electric Tool Corporation | Utility mount light |
| US10323831B2 (en) | 2015-11-13 | 2019-06-18 | Milwaukee Electric Tool Corporation | Utility mount light |
| US11365872B1 (en) | 2015-11-13 | 2022-06-21 | Milwaukee Electric Tool Corporation | Utility mount light |
| US11073265B2 (en) | 2015-11-13 | 2021-07-27 | Milwaukee Electric Tool Corporation | Utility mount light |
| US11754266B2 (en) | 2015-11-13 | 2023-09-12 | Milwaukee Electric Tool Corporation | Utility mount light |
| US11262055B2 (en) | 2015-11-13 | 2022-03-01 | Milwaukee Electric Tool Corporation | Utility mount light |
| USD899650S1 (en) | 2016-05-16 | 2020-10-20 | Milwaukee Electric Tool Corporation | Light |
| USD816252S1 (en) | 2016-05-16 | 2018-04-24 | Milwaukee Electric Tool Corporation | Light |
| CN109378303A (en) * | 2018-08-21 | 2019-02-22 | 华北电力大学(保定) | Micro-needle rib-cluster array micro-channel micro heat exchanger |
| WO2020232178A1 (en) * | 2019-05-14 | 2020-11-19 | Holo, Inc. | Devices, systems and methods for thermal management |
| CN114270129A (en) * | 2019-05-14 | 2022-04-01 | 霍洛公司 | Apparatus, system, and method for thermal management |
| US11558979B2 (en) * | 2020-07-27 | 2023-01-17 | Dupont Electronics, Inc. | Heat sink for electronic devices |
| US20220030738A1 (en) * | 2020-07-27 | 2022-01-27 | Dupont Electronics, Inc. | Heat sink for electronic devices |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150214132A1 (en) | 2015-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20150214132A1 (en) | Low-Profile Heat Sink with Fine-Structure Patterned Fins for Increased Heat Transfer | |
| Lohrasbi et al. | A comprehensive review on the core thermal management improvement concepts in power electronics | |
| US7261143B2 (en) | Heat pipe | |
| JP4754483B2 (en) | ELECTRONIC DEVICE USING NANOTUBE AREA AND SUPPORTING THERMAL HEAT SINK ACTION AND ITS MANUFACTURING METHOD | |
| US7609520B2 (en) | Heat spreader with vapor chamber defined therein | |
| US7732918B2 (en) | Vapor chamber heat sink having a carbon nanotube fluid interface | |
| US7795725B2 (en) | Semiconductor packages | |
| KR100495699B1 (en) | Flat plate heat transferring apparatus and manufacturing method thereof | |
| US20070158052A1 (en) | Heat-dissipating device and method for manufacturing same | |
| US20080001284A1 (en) | Heat Dissipation Structure With Aligned Carbon Nanotube Arrays and Methods for Manufacturing And Use | |
| EP2112249A1 (en) | Systems and methods for thermal management of electronic components | |
| US7011144B2 (en) | System and method for cooling electronic assemblies | |
| CN110192273A (en) | Method and apparatus for spreading high heat flux in a thermal ground plane | |
| US7044212B1 (en) | Refrigeration device and a method for producing the same | |
| US20180149436A1 (en) | High efficiency thermal conductivity structure | |
| Liu et al. | Carbon nanotubes for electronics manufacturing and packaging: From growth to integration | |
| US20110186270A1 (en) | Heat transfer device with anisotropic heat dissipating and absorption structures | |
| CN110707059A (en) | A multi-dimensional mesh mixed microchannel fluid radiator | |
| So et al. | Micromachined passive phase-change cooler for thermal management of chip-level electronics | |
| US7210519B2 (en) | Heat pipe | |
| Hashimoto et al. | Nano-structured two-phase heat spreader for cooling ultra-high heat flux sources | |
| CN214477403U (en) | a heat sink | |
| Li et al. | Enhanced pool boiling performance on micro-, nano-, and hybrid-structured surfaces | |
| Bharadwaj et al. | Review on various coating techniques to improve boiling heat transfer | |
| US20060102325A1 (en) | Guiding fin heat sink |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: DICON FIBEROPTICS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LEE, HO-SHANG;REEL/FRAME:025975/0365 Effective date: 20110316 |
|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |