US20140174358A1 - Magnetic Field Assisted Deposition - Google Patents
Magnetic Field Assisted Deposition Download PDFInfo
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- US20140174358A1 US20140174358A1 US14/193,988 US201414193988A US2014174358A1 US 20140174358 A1 US20140174358 A1 US 20140174358A1 US 201414193988 A US201414193988 A US 201414193988A US 2014174358 A1 US2014174358 A1 US 2014174358A1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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Abstract
Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.
Description
- This application is a divisional of U.S. patent application Ser. No. 13/410,545 filed on Mar. 2, 2012, which claims priority under 35 U.S.C. §119(e) to U.S. Provisional Patent Application No. 61/470,405 filed on Mar. 31, 2011, which are incorporated by reference herein in their entirety.
- 1. Field of Art
- The present invention relates to using a magnetic field for depositing one or more layers of materials on a substrate.
- 2. Description of the Related Art
- Various chemical processes are used to deposit material on a substrate. Such chemical processes include chemical vapor deposition (CVD), atomic layer deposition (ALD) and molecular layer deposition (MLD). CVD is the most common method for depositing a layer of material on a substrate. In CVD, reactive gas precursors are mixed and then delivered to a reaction chamber where a layer of material is deposited after the mixed gas comes into contact with the substrate.
- ALD is another way of depositing material on a substrate. ALD uses the bonding force of a chemisorbed molecule that is different from the bonding force of a physisorbed molecule. In ALD, source precursor is absorbed into the surface of a substrate and then purged with an inert gas. As a result, physisorbed molecules of the source precursor (bonded by the Van der Waals force) are desorbed from the substrate. However, chemisorbed molecules of the source precursor are covalently bonded, and hence, these molecules are strongly adsorbed in the substrate and not desorbed from the substrate. The chemisorbed molecules of the source precursor (adsorbed on the substrate) react with and/or are replaced by molecules of reactant precursor. Then, the excessive precursor or physisorbed molecules are removed by injecting the purge gas and/or pumping the chamber, obtaining a final atomic layer.
- MLD is a thin film deposition method similar to ALD but in MLD, molecules are deposited onto the substrate as a unit to form polymeric films on a substrate. In MLD, a molecular fragment is deposited during each reaction cycle. The precursors for MLD have typically been homobifunctional reactants. MLD method is used generally for growing organic polymers such as polyamides on the substrate. The precursors for MLD and ALD may also be used to grow hybrid organic-inorganic polymers such as Alucone (i.e., aluminum alkoxide polymer having carbon-containing backbones obtained by reacting trimethylaluminum (TMA: Al(CH3)3) and ethylene glycol) or Zircone (hybrid organic-inorganic systems based on the reaction between zirconium precursor (such as zirconium t-butoxide Zr[OC(CH3)3)]4, or tetrakis(dimethylamido)zieconium Zr[N(CH3)2]4) with diol (such as ethylene glycol)).
- In such deposition processes, molecules are absorbed on the surface of the substrate, react with material on the surface or replace material on the surface. Depending on the substrate and/or the type of precursor, however, the precursor molecules are not easily absorbed on the surface of the substrate. Alternatively, the precursor molecules may not easily react with or replace material on the surface of the substrate. In such cases, the injection time of the precursor is increased or the process of injecting the precursor is repeated for a number of times to ensure that a sufficient amount of precursor molecules are absorbed in the surface of the substrate. The increased time or repetition of process results in lower efficiency and increased time for depositing materials on the substrate.
- Embodiments relate to a method of depositing a layer of material on a substrate where injected precursor molecules are subject to a magnetic field that traverses the paths of the precursor molecules to the substrate. The injected precursor molecules are polar precursor molecules. Hence, the magnetic field causes spiral movements of the precursor molecules relative to a surface of the substrate as the precursor molecules move toward the substrate. The surface of the substrate is exposed to the precursor molecules that move along the spiral paths. Such spiral movements of the precursor molecules facilitate absorption or reaction of the precursor molecules with the surface of the substrate.
- In one embodiment, excess precursor molecules remaining after exposing the surface of the substrate to the injected precursor molecules are discharged from an apparatus for performing the deposition process.
- In one embodiment, radicals are generated as precursor molecules by applying voltage across electrodes.
- In one embodiment, the substrate is moved relative to a reactor that injects the precursor molecules onto the surface of the substrate.
- In one embodiment, the magnetic field is generated by permanent magnets or electromagnets.
- In one embodiment, the precursor molecules are source precursor molecules or reactant precursor molecules for performing atomic layer deposition (ALD), chemical vapor deposition (CVD) or molecular layer deposition (MLD) on the substrate.
- In one embodiment, the precursor molecules are methylsilane molecules, dimethylaluminumhydride (DMAH) molecules or dimethylethylamine alane (DMEAA) molecules.
- Embodiments relate to an apparatus for depositing a layer of material on a substrate. The apparatus may include a body and a plurality of magnets within or outside the body. The body is formed with a reaction chamber in which injected precursor molecules travel to come in contact with the surface of the substrate. The magnets are configured to generate a magnetic field within the reaction chamber. The magnetic field traverses paths of the precursor molecules to the substrate to cause spiral movements of the precursor molecules relative to a surface of the substrate.
- In one embodiment, the apparatus further includes a mechanism coupled to the substrate of the body to cause a relative motion between the body and the substrate.
- In one embodiment, the body is further formed with a channel for supplying the precursor molecules to the reaction chamber, a constriction zone connected to the reaction chamber and having a height lower than the reaction chamber, and an exhaust portion connected to the constriction zone and configured to discharge excess precursor molecules from the apparatus.
- In one embodiment, at least one of the magnets forms a wall of the reaction chamber.
- In one embodiment, at least one of the magnets is placed outside the body.
- In one embodiment, the body is formed of a non-magnetic material.
- In one embodiment, one of the plurality of magnet is placed at one side of the reaction chamber and another of the plurality of magnet is placed at an opposite side of the reaction chamber.
- In one embodiment, the apparatus further includes an electrode extending along a plasma chamber formed in the body. The plasma is generated within the plasma chamber by applying voltage across the electrode and the body.
- In one embodiment, the body is further formed with a channel for supplying gas into the plasma chamber, perforations between the reactor chamber and the plasma chamber, a constriction zone connected to the reaction chamber and having a height lower than the reaction chamber, and an exhaust portion connected to the constriction zone and configured to discharge excess precursor molecules from the apparatus.
- In one embodiment, the plurality of magnets are permanent magnets or electromagnets.
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FIG. 1 is a cross sectional diagram of a linear deposition device, according to one embodiment. -
FIG. 2 is a perspective view of a linear deposition device, according to one embodiment. -
FIG. 3 is a perspective view of a rotating deposition device, according to one embodiment. -
FIG. 4A is a diagram illustrating an injector with magnets attached thereto, according to one embodiment. -
FIG. 4B is a sectional diagram of the injector ofFIG. 4A taken along line A-B, according to one embodiment. -
FIG. 5A is a conceptual diagram illustrating paths of precursor molecules traveling to a substrate without application of a magnetic field. -
FIG. 5B is a conceptual diagram illustrating paths of precursor molecules traveling to a substrate when a magnetic field is applied, according to one embodiment. -
FIG. 6 is a sectional diagram of a set of injectors, according to one embodiment. -
FIG. 7 is a sectional diagram of an injector and a radical reactor, according to one embodiment. -
FIG. 8 is a sectional diagram of an injector and a radical reactor, according to another embodiment. -
FIG. 9 is a sectional diagram of an injector and a radical reactor, according to another embodiment. -
FIG. 10 is a flowchart illustrating a process of injecting precursor onto the substrate, according to one embodiment. - Embodiments are described herein with reference to the accompanying drawings. Principles disclosed herein may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. In the description, details of well-known features and techniques may be omitted to avoid unnecessarily obscuring the features of the embodiments.
- In the drawings, like reference numerals in the drawings denote like elements. The shape, size and regions, and the like, of the drawing may be exaggerated for clarity.
- Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movements of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make movements parallel to the surface of the substrate due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would attach or react on certain sites on the substrate (e.g., nucleation sites, broken bonds and stepped surface locations). Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.
- Polar precursor describe herein refers to material including molecules or their chemical groups having an electric dipole or multipole moment. Polarity is dependent on the difference in electronegativity between atoms in a compound and the symmetry of the compound's structure. Polar precursor may include, among others, linear molecules (e.g., CO), molecules with a single H (e.g., HF), molecules with an OH at one end (e.g., CH3OH and C2H5OH), molecules with an O at one end (e.g., H2O), molecules with an N at one end (e.g., NH3) and plasma. Polar precursor also includes materials such as Methylsilane ((CH3)xSi4-x, where x=1, 2 or 3), dimethylaluminumhydride (DMAH) and dimethylethylamine alane (DMEAA).
- In contrast, non-polar precursor includes molecules that have no polarity in the bonds or have symmetrical arrangement of polar bonds. Non-polar precursor includes, among others, diatomic molecules of the same element (e.g., O2, H2, N2), most carbon compounds (e.g., CO2, CH4, C2H4) and noble or inert gases (e.g., He and Ar).
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FIG. 1 is a cross sectional diagram of alinear deposition device 100, according to one embodiment.FIG. 2 is a perspective view of the linear deposition device 100 (without chamber walls to facilitate explanation), according to one embodiment. Thelinear deposition device 100 may include, among other components, asupport pillar 118, theprocess chamber 110 and one ormore reactors 136. Thereactors 136 may include one or more of injectors and radical reactors. Each of the injectors injects source precursors, reactant precursors, purge gases or a combination of these materials onto thesubstrate 120. Thelinear deposition device 100 may perform chemical vapor deposition (CVD), atomic layer deposition (ALD), molecular layer deposition (MLD) or a combination thereof. - The process chamber enclosed by the walls may be maintained in a vacuum state to prevent contaminants from affecting the deposition process. The
process chamber 110 contains asusceptor 128 which receives asubstrate 120. Thesusceptor 128 is placed on asupport plate 124 for a sliding movement. Thesupport plate 124 may include a temperature controller (e.g., a heater or a cooler) to control the temperature of thesubstrate 120. Thelinear deposition device 100 may also include lift pins that facilitate loading of thesubstrate 120 onto thesusceptor 128 or dismounting of thesubstrate 120 from thesusceptor 128. - In one embodiment, the
susceptor 128 is secured tobrackets 210 that move across anextended bar 138 with screws formed thereon. Thebrackets 210 have corresponding screws formed in their holes for receiving theextended bar 138. Theextended bar 138 is secured to a spindle of amotor 114, and hence, theextended bar 138 rotates as the spindle of themotor 114 rotates. The rotation of theextended bar 138 causes the brackets 210 (and therefore the susceptor 128) to make a linear movement on thesupport plate 124. By controlling the speed and rotation direction of themotor 114, the speed and direction of the linear movement of thesusceptor 128 can be controlled. The use of amotor 114 and theextended bar 138 is merely an example of a mechanism for moving thesusceptor 128. Various other ways of moving the susceptor 128 (e.g., use of gears and pinion at the bottom, top or side of the susceptor 128). Moreover, instead of moving thesusceptor 128, thesusceptor 128 may remain stationary and thereactors 136 may be moved. -
FIG. 3 is a perspective view of a rotating deposition device 300, according to one embodiment. Instead of using thelinear deposition device 100 ofFIG. 1 , the rotating deposition device 300 may be used to perform the deposition process according to another embodiment. The rotating deposition device 300 may include, among other components, reactors 320, 334, 364, 368, a susceptor 318, and a container 324 enclosing these components. The susceptor 318 secures the substrates 314 in place. The reactors 320, 334, 364, 368 are placed above the substrates 314 and the susceptor 318. Either the susceptor 318 or the reactors 320, 334, 364, 368 rotate to subject the substrates 314 to different processes. - One or more of the reactors 320, 334, 364, 368 are connected to gas pipes (not shown) to provide source precursor, reactor precursor, purge gas and/or other materials. The materials provided by the gas pipes may be (i) injected onto the substrate 314 directly by the reactors 320, 334, 364, 368, (ii) after mixing in a chamber inside the reactors 320, 334, 364, 368, or (iii) after conversion into radicals by plasma generated within the reactors 320, 334, 364, 368. After the materials are injected onto the substrate 314, the redundant materials may be exhausted through outlets 330, 338.
- Embodiments as described herein may be use in the
linear deposition device 100, the rotating deposition device 300 or other types of deposition device. Taking the examples of thelinear deposition device 100 and the rotating deposition device 300, the substrate 120 (or 314) may undergo different sequences of processes by moving the substrate 120 (or 314) relative to the reactors in one direction and then in an opposite direction. -
FIG. 4A is a perspective view of aninjector 136 according to one embodiment. Theinjector 136 includes, among other components, a set ofmagnet injector 136. The magnetic field in theinjector 136 causes polar precursor molecules to move along spiral paths to the surface of thesubstrate 120, as described below in detail with reference toFIG. 5B . - The
injector 136 has abody 404 that is connected to a supply pipe 410 and a discharge pipe 420. The supply pipe 410 receives source precursor, reactant precursor, mixed gas compound, purge gas or a combination thereof. Excess precursor molecules and/or by-product gas are discharged from theinjector 136 via the discharge pipe 420. - The
injector 136 injects the received gas onto the surface of thesubstrate 120 as thesubstrate 120 moves in a direction indicated by arrow 450 to deposit a layer 140 of material on thesubstrate 120. In an alternative embodiment, theinjector 136 may move relative to a fixedsubstrate 120. Subsequently, thesubstrate 120 may be injected with a different material using the same or different injector or radical reactor. - In one embodiment, the
body 404 is formed of non-magnetic materials such as Aluminum. When theinjector 136 is used in a higher temperature range, it is advantageous to form thebody 404 of Al2O3, AlN or ceramic such as SiC. -
FIG. 4B is a sectional diagram of theinjector 136 ofFIG. 4A taken along line A-B, according to one embodiment. The body of theinjector 136 is formed with achannel 462, perforations 464 (e.g., holes or slits), areactor chamber 468, aconstriction zone 470 and anexhaust portion 472. The supply pipe 410 is connected to thechannel 462 to supply precursor material into thereaction chamber 468 via theperforations 464. The precursor material comes into contact with thesubstrate 120 below thereaction chamber 468. - After part of the precursor material is absorbed onto the surface of the
substrate 120, the remaining precursor material (i.e., excess precursor molecules) and/or by-product gases pass through theconstriction zone 470 and are discharged out of theinjector 136 via theexhaust portion 472 that is connected to the pipe 420. - The
constriction zone 470 has a height H2 lower than the height H1 of thereaction chamber 468. Hence, the flow rate of the precursor material is higher in theconstriction zone 470 compared to thereaction chamber 468. The higher flow rate in thereaction chamber 468 enables the removal of physisorbed precursor molecules from the surface of thesubstrate 120 while retaining the chemisorbed precursor molecules on thesubstrate 120. - The set of
magnets magnets substrate 120. If the precursor molecules are polar, the magnetic field exerts lateral force on the precursor molecules, causing the precursor molecules to make spiral movements as the molecules move towards thesubstrate 120. - After the precursor molecules reach the surface of the
substrate 120, the precursor molecules continue to make movements parallel to the surface of thesubstrate 120 due to their inertia. Such movements are advantageous, among other reasons, because the precursor molecules are more likely to find spots on thesubstrate 120 amenable to attachment or reaction. Spots amenable for attachment of the precursor molecules include, among others, nucleation sites, broken bonds or stepped region on thesubstrate 120. Hence, applying the magnetic field in theinjector 136 facilitates the absorption or reaction of the precursor molecules on thesubstrate 120. -
FIG. 5A is a conceptualdiagram illustrating paths 514 ofprecursor molecules 510 traveling to thesubstrate 120 without application of a magnetic field. Without any magnetic field, thepaths 514 are generally linear from an injection point (i.e., the perforation 464) to thesubstrate 120. Since the motion vectors of theprecursor molecules 510 have no element parallel to the surface of thesubstrate 120, theprecursor molecules 510 either becomes absorbed or react at the spots where themolecules 510 reaches thesubstrate 120 or theprecursor molecules 510 bounce off from the surface of thesubstrate 120 without or after making minimal lateral movements (i.e., movement parallel to the surface of the substrate 120) on thesubstrate 120. -
FIG. 5B is a conceptualdiagram illustrating paths precursor molecules 510 traveling to thesubstrate 120 when magnetic field is applied in theinjector 136, according to one embodiment. When polar precursor is used, the molecules are subject to Lorentz force as the molecules pass the magnetic field. Assuming that the direction of the magnetic field is from the left to the right as illustrated inFIG. 5B , Lorentz force applied to the molecules is perpendicular to the direction of the magnetic field and the moving direction of the molecules as shown byarrow 526. - Hence, the
precursor molecules 510 come to move alongspiral paths 522 as they move across the magnetic field until theprecursor molecules 510 reach the surface of thesubstrate 120. After reaching the surface of thesubstrate 120, the precursor molecules may continue to make movements parallel to the surface of thesubstrate 120 before bouncing off the surface of thesubstrate 120. The lateral movements of theprecursor molecules 510 on the surface of thesubstrate 120 tend to be longer compared to cases where theprecursor molecules 510 are not applied with a magnetic field. - During the movements of the
precursor molecules 510 parallel to the surface of thesubstrate 120, theprecursor molecules 510 may reach spots on the surface of thesubstrate 120 where theprecursor molecules 510 are more likely to become attached or react with materials on the surface of thesubstrate 120. The increased absorption or reaction of theprecursor molecules 510 contributes to more even absorption of theprecursor molecules 510 on the substrate, increased density of the layer formed on thesubstrate 120, and reduced number of pin-holes or other defects in the deposited layer. - The magnetic field can be formed by magnets of various configurations and structures. Permanent magnets or electromagnets may be placed within or outside the reaction chamber of the injector or radical reactor to generate the magnetic field. The permanent magnets may be made of, for example, Alnico, Neodymium or Sm-cobalt.
- Preferably, a set of magnets are placed at opposite sides of the reaction chamber so that the reaction chamber is subject to a magnetic field that is generally perpendicular to the movement of the precursor molecules. That is, although primary embodiments described herein use injectors or radical reactors that inject the precursor materials vertically down towards the substrate, in other embodiments, the precursor molecules may travel horizontally or in other directions. Regardless of the direction that the precursor molecules travel in such embodiments, the magnets are placed so that the magnetic field traverses the travel path of the precursor molecules to cause spiral movements in the precursor molecules before reaching the substrate.
- Further, although it is advantageous that the direction of the magnetic field is perpendicular to the general paths of the precursor molecules to apply increased Lorentz force, the direction of the magnetic field may be somewhat slanted or non-perpendicular, for example, as described below in detail with reference to
FIG. 9 . -
FIG. 6 is a sectional diagram of a set ofinjectors injectors injector 136 ofFIGS. 4A and 4B except that two injectors are placed in tandem to inject different precursor materials onto thesubstrate 120. - In one embodiment, the
injectors substrate 120 moves from the left to the right and is injected with DMAH as a source precursor by theinjector 136A and then injected with O3 or H2O as a reactant precursor by theinjector 136B. DMAH, O3 and H2O are polar precursors, and therefore, these precursors are subject to Lorentz force caused bymagnets magnets - In another embodiment, the
injectors substrate 120 moves from the left to the right and is injected with DMAH as a source precursor by theinjector 136A and then injected with NH3 as a reactant precursor by theinjector 136B. DMAH and NH3 are polar precursors, and therefore, these precursors are subject to Lorentz force caused bymagnets magnets -
FIG. 7 is a sectional diagram of theinjector 136C and aradical reactor 136D, according to one embodiment. Theinjector 136C is substantially the same as theinjector 136 ofFIGS. 4A and 4B except thatmagnet 702A forms part of the wall defining areaction chamber 704 andmagnet 702B forms part of the wall defining anexhaust portion 706. The function of thereaction chamber 704 and theexhaust portion 706 are substantially identical to the functions of thereaction chamber 468 and theexhaust portion 472 ofFIG. 4B . - The
radical reactor 136D generates radicals by applying voltage across aninner electrode 722 and an outer electrode 720 (which is part of the body 712). Thebody 712 is formed with achannel 710, perforations 714 (e.g., holes or slits), aplasma chamber 718, slits 726, areaction chamber 730, aconstriction zone 732 and anexhaust portion 734. Thereaction chamber 730, theconstriction zone 732 and theexhaust portion 734 have the same function as thereaction chamber 468, theconstriction zone 470 and theexhaust portion 472 ofFIG. 4B . A gas or mixture of gases is injected from a source into theplasma chamber 718 via achannel 710 extending across the length of theradical reactor 136D and theperforations 714. As the voltage is applied between theinner electrode 722 and theouter electrode 720, plasma is generated in theplasma chamber 718. As a result, radicals are generated within theplasma chamber 718 and are injected into thereaction chamber 730. The radicals are generated at a location remote from thesubstrate 120, and hence, theradical reactor 136D is referred to as a “remote plasma generator.” - As the radicals move down towards the
substrate 120, the magnetic field generated by themagnets substrate 120 due to spiral paths and inertia of the radicals. Hence, the radicals are more likely to attach to the surface of thesubstrate 120, or interact/replace source precursor molecules already absorbed on the surface of thesubstrate 120. - The use of a remote plasma generator is merely an example, and various other types of plasma generators may also be used to generate and inject radicals onto the
substrate 120. Regardless of the structure, the plasma generators may include magnets that generate the magnetic field that traverses across the traveling path of the radicals. - Further, although the
radical reactor 136D has themagnets reaction chamber 730 and theexhaust portion 744B, the magnets may be installed as separate elements attached inside or outside these walls. - In one embodiment, the
injector 136C and theradical reactor 136D are used for depositing Al2O3 layer on thesubstrate 120. For this purpose, thesubstrate 120 moves from the left to the right and is injected with DMAH as a source precursor by theinjector 136C and then injected with O* radicals as a reactant precursor by theinjector 136D. DMAH and O* radicals are polar precursors, and therefore, these precursors are subject to Lorentz force caused bymagnets magnets - In another embodiment, the
injector 136C and theradical reactor 136D are used for depositing AlN layer on thesubstrate 120. For this purpose, thesubstrate 120 moves from the left to the right and is injected with DMAH as a source precursor by theinjector 136C and then injected with N* radicals as a reactant precursor by theinjector 136D. DMAH and N* radicals are polar precursors, and therefore, these precursors are subject to Lorentz force caused bymagnets magnets - The magnets may also be placed to form walls of the radical chamber.
FIG. 8 is a sectional diagram of aninjector 136E and aradical reactor 136F, according to another embodiment.Magnet 812A forms a wall of areaction chamber 816 of theinjector 136E. Similarly,magnet 824A forms a wall of areaction chamber 820 of theradical reactor 136F.Magnet 812B is attached to interior of thereaction chamber 816 andmagnet 824B is attached to the interior of thereaction chamber 820. - The magnets may also have an asymmetric structure.
FIG. 9 is a sectional diagram of aninjector 136G and aradical reactor 136H, according to another embodiment. In theinjector 136G and theradical reactor 136H, themagnets magnets FIG. 9 . As long as the magnets are designed to exert Lorentz force on the precursor molecules, the dimensions, strengths, and the configuration of the magnets may be varied. -
FIG. 10 is a flowchart illustrating a process of injecting precursor onto the substrate, according to one embodiment. First, precursor is injected 1010 into a reactor chamber of an injector or a radical reactor. A magnetic field is applied 1020 to the reactor chamber so that the magnetic field traverses the paths of precursor molecules traveling to the substrate. - By applying the magnetic field, the precursor molecules are subject to Lorentz force. The Lorentz force causes the precursor molecules to take spiral paths to the substrate.
- The substrate is then exposed 1030 to the precursor molecules. Due to the spiral path, the precursor molecules travel along the surface of the substrate for a distance before bouncing off the surface. As a result, the precursor molecules are more likely to settle on spots of the surface of the substrate where the molecules can attach or react.
- Excess precursor molecules remaining after exposure of the substrate are then discharged 1040 from the reactor chamber.
- Although the present invention has been described above with respect to several embodiments, various modifications can be made within the scope of the present invention. Accordingly, the disclosure of the present invention is intended to be illustrative, but not limiting, of the scope of the invention, which is set forth in the following claims.
Claims (9)
1. An apparatus for depositing a layer on a substrate, comprising:
a process chamber;
a reactor at least partially enclosed in a process chamber, the reactor comprising electrodes for generating radicals as precursor molecules, the reactor formed with a reaction chamber in which the precursor molecules travel to a surface of the substrate;
a plurality of magnets within the processor chamber and attached to the reactor, the plurality of magnets configured to generate a magnetic field within the reaction chamber, the magnetic field traversing paths of the precursor molecules to the substrate to cause spiral movements of the precursor molecules relative to a surface of the substrate; and
a mechanism coupled to the substrate of the body to cause relative motion between the body and the substrate.
2. The apparatus of claim 1 , wherein the reactor is further formed with a channel for supplying the precursor molecules to the reaction chamber, a constriction zone connected to the reaction chamber and having a height lower than the reaction chamber, and an exhaust portion connected to the constriction zone and configured to discharge excess precursor molecules from the apparatus.
3. The apparatus of claim 1 , wherein at least one of the magnets form a wall of the reaction chamber.
4. The apparatus of claim 1 , wherein at least one of the magnets are placed outside the body.
5. The apparatus of claim 1 , wherein the reactor is formed of non-magnetic material.
6. The apparatus of claim 1 , wherein one of the plurality of magnet is placed at one side of the reaction chamber and another of the plurality of magnet is placed at an opposite side of the reaction chamber.
7. The apparatus of claim 1 , wherein the reactor is formed with a plasma chamber along which the electrodes extending, and wherein plasma is generated within the plasma chamber by applying voltage across the electrodes.
8. The apparatus of claim 7 , wherein the reactor is further formed with a channel for supplying gas into the plasma chamber, perforations between the reactor chamber and the plasma chamber, a constriction zone connected to the reaction chamber and having a height lower than the reaction chamber, and an exhaust portion connected to the constriction zone and configured to discharge excess precursor molecules from the apparatus.
9. The apparatus of claim 1 , wherein the plurality of magnets are permanent magnets or electromagnets.
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US14/193,988 US20140174358A1 (en) | 2011-03-31 | 2014-02-28 | Magnetic Field Assisted Deposition |
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US201161470405P | 2011-03-31 | 2011-03-31 | |
US13/410,545 US8697198B2 (en) | 2011-03-31 | 2012-03-02 | Magnetic field assisted deposition |
US14/193,988 US20140174358A1 (en) | 2011-03-31 | 2014-02-28 | Magnetic Field Assisted Deposition |
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US13/410,545 Division US8697198B2 (en) | 2011-03-31 | 2012-03-02 | Magnetic field assisted deposition |
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Also Published As
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KR101394820B1 (en) | 2014-05-14 |
US8697198B2 (en) | 2014-04-15 |
KR20120112118A (en) | 2012-10-11 |
US20120251738A1 (en) | 2012-10-04 |
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