US20140008731A1 - Field-effect-transistor with self-aligned diffusion contact - Google Patents
Field-effect-transistor with self-aligned diffusion contact Download PDFInfo
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- US20140008731A1 US20140008731A1 US13/542,003 US201213542003A US2014008731A1 US 20140008731 A1 US20140008731 A1 US 20140008731A1 US 201213542003 A US201213542003 A US 201213542003A US 2014008731 A1 US2014008731 A1 US 2014008731A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/845—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Abstract
Description
- The present invention relates generally to the field of semiconductor device manufacturing and in particular relates to field-effect-transistor with self-aligned diffusion contact and method of forming thereof.
- With most recent advancement in semiconductor device manufacturing, field-effect-transistors with self-aligned contact-to-diffusion are generally viewed as a necessity for 14-nm node and beyond in order to enable gate pitch scaling with further dense integration of semiconductor devices.
- In the meantime, replacement-gate (“gate-last”) technologies such as, for example, replacement-metal-gate (RMG) technologies are current front-runners and choice of manufacturing for the 14-nm node. However, replacement-gate technologies tend to be much less amendable to self-aligned contacts (“SAC”) because an insulating cap is generally required to be self-aligned atop the conductive gate electrode such that the gate does not get shorted to the self-aligned contact. In addition, etch-back and planarization schemes that are necessary to make the RMG structure generally have small margins of manufacturing.
- Embodiments of the present invention provide a method of forming transistors and self-aligned diffusion contact to the transistors. The method includes forming one or more silicon fins on top of an oxide layer, the oxide layer being situated on top of a silicon donor wafer; forming one or more dummy gate electrodes crossing the one or more silicon fins; forming sidewall spacers next to sidewalls of the one or more dummy gate electrodes; removing one or more areas of the oxide layer thereby creating openings therein, the openings being self-aligned to edges of the one or more fins and edges of the sidewall spacers; forming an epitaxial silicon layer in the openings; removing the donor wafer; and siliciding at least a bottom portion of the epitaxial silicon layer.
- Embodiments of the method further include forming a dummy dielectric layer covering the one or more silicon fins before forming the one or more dummy gate electrodes crossing the one or more silicon fins.
- In one aspect of the embodiments, removing the one or more areas of the oxide layer includes etching the oxide layer not covered by the one or more silicon fins; not covered by the one or more dummy gate electrodes; and not covered by the sidewall spacers next to the dummy gate electrodes; wherein etching the oxide is selective to the dummy dielectric layer and selective to the sidewall spacers.
- In another aspect of the embodiments, forming the epitaxial silicon layer further includes forming the epitaxial silicon layer on the one or more silicon fins.
- Embodiments of the method further include removing the dummy dielectric layer that covers at least one of the one or more silicon fins before forming the epitaxial silicon layer such that the epitaxial silicon layer conductively connects the at least one of the one or more fins to the silicon donor wafer.
- In one aspect of the embodiments, siliciding the at least a portion of the epitaxial silicon layer includes removing the silicon donor wafer to expose the oxide layer and the bottom surface of the epitaxial silicon layer; depositing a layer of silicide-forming metal covering the exposed bottom surface; and converting the bottom portion of the epitaxial silicon layer into silicide.
- In another aspect of the embodiments, the epitaxial silicon layer is a first epitaxial silicon layer being confined within the openings inside the oxide layer, further including forming a second epitaxial silicon layer directly on top of the first epitaxial silicon layer as well as covering the one or more silicon fins, wherein the first epitaxial silicon layer is below a top surface of the oxide layer.
- Embodiments of the method further include, before forming the second epitaxial silicon layer, removing a dummy dielectric layer covering sidewalls of at least one of the one or more silicon fins such that the second epitaxial silicon layer conductively connects the first epitaxial silicon layer to the at least one of the one or more silicon fins.
- Embodiments of the method further include opening a top surface of the one or more dummy gate electrodes; selectively removing material of the dummy gate electrodes thereby creating gate openings; selectively removing portions of a dummy dielectric layer underneath the dummy gate electrodes; the dummy dielectric layer covering the one or more silicon fins; and forming replacement metal gates in the gate openings.
- Embodiments of present invention also provide a semiconductor structure, which includes an array of fin-type transistors formed on an oxide layers, at least a first and a second of the fin-type transistors having respective source/drain regions formed inside the oxide layer and being conductively connected to each other by an epitaxial silicon layer, the epitaxial silicon layer being formed on top of a first and a second fins of the first and second fin-type transistors respectively.
- In one embodiment, the source/drain regions of the first and second fin-type transistors are self-aligned, respectively, to the first and second fins and to their respective gates.
- The present invention will be understood and appreciated more fully from the following detailed description of preferred embodiments, taken in conjunction with the accompanying drawings of which:
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FIG. 1 is a demonstrative illustration of top and cross-sectional views of a semiconductor structure during a process of manufacturing thereof according to an embodiment of the present invention; -
FIG. 2 is a demonstrative illustration of top and cross-sectional views of a semiconductor structure during a process of manufacturing thereof, following the step shown inFIG. 1 , according to an embodiment of the present invention; -
FIG. 3 is a demonstrative illustration of top and cross-sectional views of a semiconductor structure during a process of manufacturing thereof, following the step shown inFIG. 2 , according to an embodiment of the present invention; -
FIG. 4 is a demonstrative illustration of top and cross-sectional views of a semiconductor structure during a process of manufacturing thereof, following the step shown inFIG. 3 , according to an embodiment of the present invention; -
FIG. 5 is a demonstrative illustration of top and cross-sectional views of a semiconductor structure during a process of manufacturing thereof, following the step shown inFIG. 4 , according to an embodiment of the present invention; -
FIG. 6 is a demonstrative illustration of top and cross-sectional views of a semiconductor structure during a process of manufacturing thereof, following the step shown inFIG. 5 , according to an embodiment of the present invention; -
FIG. 7 is a demonstrative illustration of top and cross-sectional views of a semiconductor structure during a process of manufacturing thereof, following the step shown inFIG. 6 , according to an embodiment of the present invention; -
FIG. 8 is a demonstrative illustration of top and cross-sectional views of a semiconductor structure during a process of manufacturing thereof, following the step shown inFIG. 7 , according to an embodiment of the present invention; -
FIG. 9 is a demonstrative illustration of top and cross-sectional views of a semiconductor structure during a process of manufacturing thereof, following the step shown inFIG. 8 , according to an embodiment of the present invention; and -
FIG. 10 is a demonstrative illustration of top and cross-sectional views of a semiconductor structure during a process of manufacturing thereof, following the step shown inFIG. 8 , according to an embodiment of the present invention; - It will be appreciated that for the purpose of simplicity and clarity of illustration, elements in the drawings have not necessarily been drawn to scale. For example, dimensions of some of the elements may be exaggerated relative to those of other elements for clarity purpose.
- In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of various embodiments of the invention. However, it is to be understood that embodiments of the invention may be practiced without these specific details.
- In the interest of not obscuring presentation of essences and/or embodiments of the invention, in the following detailed description, some processing steps and/or operations that are known in the art may have been combined together for presentation and/or for illustration purpose and in some instances may have not been described in detail. In other instances, some processing steps and/or operations that are known in the art may not be described at all. In addition, some well-known device processing techniques may have not been described in detail and, in some instances, may be referred to other published articles, patents, and/or published patent applications for reference in order not to obscure description of essence and/or embodiments of the invention. It is to be understood that the following descriptions may have rather focused on distinctive features and/or elements of various embodiments of the invention.
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FIG. 1 is a demonstrative illustration of top and cross-sectional views of asemiconductor structure 100 during a process of manufacturing thereof according to an embodiment of present invention.Semiconductor structure 100 may be a part of a large semiconductor chip, for example, and is illustrated to include, among others, one or more three dimensional (3D) or fin-type field-effect-transistors (FETs) that are commonly known to include, for example, FinFETs and tri-gate FETs. For the purpose of description hereinafter without losing generality, it is assumed and demonstratively illustrated thatsemiconductor structure 100 includes one or more FinFETs (or FinFET transistors), although below description may be equally applied to tri-gate FETs with little or no modification. According to an embodiment of present invention, the FinFETs ofsemiconductor structure 100 are manufactured or formed to have self-aligned contacts to their source/drain regions, as will be illustrated more clearly throughoutFIGS. 1-10 at various stages of manufacturing. -
FIG. 1 includes top view ofsemiconductor structure 100 as well as cross-sectional views taken, when viewing into the paper, at horizontal cross-section denoted by A-A′ and vertical cross-section denoted by B-B′. For better understanding and further comprehension,FIG. 1 additionally includes a perspective view ofsemiconductor structure 100 although references and related description, in the below detailed description of embodiments, will be made only to the top and cross-sectional views of the structure. For the same intended purpose, other figures throughout this application may sometimes include perspective views ofsemiconductor structure 100 as well. - To manufacture
semiconductor structure 100 having one or more fin-type FETs, such as an array of FinFET transistors, one embodiment of a method of present invention may include starting with a silicon-on-insulator (SOI) substrate which is ready made or commercially available. The SOI substrate may include a silicon (Si)wafer 101, known as a “donor” wafer; a silicon-dioxide (SiO2)layer 102, known as a BOX layer or oxide layer, on top ofsilicon donor wafer 101; and a single-crystal silicon layer, known as a SOI layer, which may be bonded to theBOX layer 102. The method further includes forming the SOI layer intosilicon fins 103 as being demonstratively illustrated inFIG. 1 . - To form
silicon fins 103 from the SOI layer, an etch-stop capping layer may first be formed onto the SOI layer through, for example, deposition. The etch-stop capping layer, in one embodiment, may be made of silicon-nitride (Si3N4) although other material suitable in providing etch-stop function may be used as well. One ormore silicon fins 103 may be subsequently formed or etched out of the SOI layer to be on top ofoxide layer 102 through a process involving masking, using industry-standard lithographic techniques, and directionally etching the etch-stop capping layer and underneath SOI layer. The directional etching process, for example a reactive-ion-etching (RIE) process, stops onBOX layer 102. After the RIE etching process, the photo-resist mask used in the lithographic etching process may be removed, leaving patterns ofsilicon fins 103 andcaps 109, which is made of the etch-stop capping layer and is self-aligned tosilicon fins 103, on top ofBOX layer 102. As being demonstratively illustrated inFIG. 1 , after formingsilicon fins 103, one embodiment of the method includes forming a gatedielectric layer 104 coveringsilicon fins 103 andcaps 109. - Next, on top of and crossing fins 103 (and on top of gate dielectric layer 104), one or
more gate electrodes 106 may be formed. In one embodiment of present invention, gatedielectric layer 104 may be dummy gate dielectric layer andgate electrodes 106 may be dummy gate electrodes since they may be removed and/or replaced later in process according to the replacement-gate technologies. In order to facilitate the replacement-gate process, dummy gatedielectric layer 104 may preferably be made of hafnium-silicon-nitride-oxide (HfSiOxNy) anddummy gate electrodes 106 may preferably be made of polycrystalline or amorphous silicon (Si). However, embodiments of present invention are not limited in this respect and other suitable materials may be used for the dummy gate dielectric layer and dummy gate electrodes. - Formation of
gate electrodes 106 may be achieved by depositing a layer of material suitable for dummy gate electrode onto dummy gatedielectric layer 104, planarizing the dummy gate electrode material by, for example, a chemical-mechanic-polishing (CMP) process, and then depositing a silicon-nitride (Si3N4) capping layer on top of the dummy gate electrode material. The stack of capping layer and gate electrode material is then patterned by employing standard lithographic and etching processes, to formdummy gate electrodes 106 with self-alignedcaps 105 on top thereof. Following the formation ofdummy gate electrodes 106,gate sidewall spacers 108 may be formed that cover sidewalls ofdummy gate electrodes 106. According to one embodiment, material of dummy gatedielectric layer 104 andsidewall spacers 108 may be made different from that ofoxide layer 102, such as made from silicon-nitride (Si3N4), so as to facilitate a later selective etching process which is described below in more details with reference toFIG. 4 . -
FIG. 2 is a demonstrative illustration of top and cross-sectional views ofsemiconductor structure 100 during a process of manufacturing thereof, following the step shown inFIG. 1 , according to an embodiment of the present invention. After patterning ofdummy gate electrodes 106 andsidewall spacers 108 thereof, portions of dummygate dielectric layer 104 that are not covered bydummy gate electrodes 106, therefore exposed, are removed by applying a directional device processing technique. For example, one embodiment of the method may include implanting heavy ions such as argon (Ar) or Xenon (Xe), vertically from the top, into the horizontal portions of dummydielectric layer 104. The ion-implanted portions of dummydielectric layer 104 are thus “damaged” and subsequently etched away in a wet etching process in hydrofluoric acid (HF).Silicon fins 103 are now protected on top bycaps 109 and on their sides by vertically-oriented remaining portions of dummy gate dielectric 104′. -
FIG. 3 is a demonstrative illustration of top and cross-sectional views ofsemiconductor structure 100 during a process of manufacturing thereof, following the step shown inFIG. 2 , according to an embodiment of the present invention. Following the formation ofgate stacks 106 as shown inFIG. 2 , one embodiment of the method defines diffusion contact areas or regions through a patterning process such as a standard photolithographic patterning process. More specifically, the method includes applying a layer of photo-resist material through, for example, a spin-on process to cover top surface ofsemiconductor structure 100 including coveringfins 103 and gate stacks 106. The method subsequently exposes the photo-resist material to a pre-determined pattern to form a photo-resistmask 201, which covers a portion or portions of theunderneath semiconductor structure 100, leaving areas that are subject to forming diffusion contacts exposed. Here, it is to be noted that a person skilled in the art will appreciate that embodiment of present invention is not limited in the above aspect and other types of masks, such as a hard mask, may be used as well to coversemiconductor structure 100. -
FIG. 4 is a demonstrative illustration of top and cross-sectional views ofsemiconductor structure 100 during a process of manufacturing thereof, following the step shown inFIG. 3 , according to an embodiment of the present invention. More specifically, with photo-resistmask 201 covering portions or parts ofsemiconductor structure 100, one embodiment of the method includes performing a directional etching process, such as a reactive-ion-etching (RIE) process, to remove parts ofoxide layer 102 that are neither covered byfins 103 and vertically-orientedgate dielectric layer 104′ next tofins 103, nor bygate stacks 106 andsidewall spacers 108, nor by photo-resistmask 201. The RIE process may be made or adjusted to be selective tocaps spacers 108, and togate dielectric layer 104′. The removal ofuncovered oxide layer 102 creates openings that are self-aligned tofins 103 and dummydielectric layer 104′, and to sidewallspacers 108 of gate stacks 106, and exposes underneathsilicon donor wafer 101. In other words, the etching process defines areas where openings are formed and where diffusion contacts may be formed. -
FIG. 5 is a demonstrative illustration of top and cross-sectional views ofsemiconductor structure 100 during a process of manufacturing thereof, following the step shown inFIG. 4 , according to an embodiment of the present invention. For example, following the removal process of exposed portions ofoxide layer 102, photo-resistmask 201 may be stripped off or removed to expose the underneath remainingoxide layer 102′. One embodiment of the method may include optionally performing a pre-epitaxial cleaning to remove any contaminating or foreign objects and/or particles that may possibly remain at the top surface ofsilicon donor wafer 101. After the optional cleaning, dopedsilicon layer 301 may be selectively and epitaxially formed in the previously formed openings in theoxide layer 102. For example,epitaxial silicon layer 301 may be doped with boron (B) or arsenic (As) in order to provide appropriate (high) conductivity.Epitaxial silicon layer 301 may only form in areas wheresilicon donor wafer 101 is exposed. In other words,epitaxial silicon layer 301 may not form or at least may not substantially form in areas wheredonor wafer 101 is still covered byoxide layer 102′, or byfins 103 or bydummy gate electrodes 106. - According to one embodiment,
epitaxial layer 301 may be formed sufficiently thick such that a subsequently formed source/drain epitaxial layer, as is shown inFIG. 6 , may bridgeepitaxial layer 301 to an epitaxial film simultaneously grown ontofins 103 for embodiments where dummy gate dielectric 104′ is completely removed from exposed portions offins 103. According to yet another embodiment,epitaxial layer 301 may be formed yet thin enough so as not to be in contact withfins 103, through for example sidewalls offins 103. This embodiment is enabled by the existence ofcaps 109 and leaving dummy gate dielectric 104′ on the sidewalls offins 103 to prevent nucleation of epi on those areas. For example,epitaxial layer 301 may be formed to have a height slightly lower than a top surface ofoxide layer 102. According to yet another embodiment, the formation ofepitaxial layer 301 may be optional for Ultra-Thin Body and Box (UTBB) device and/or other similar situations whereoxide layer 102 is sufficiently thin. In this situation, a later formed source/drain epitaxial layer may be directly contacted by any back-side formed contact structure. -
FIG. 6 is a demonstrative illustration of top and cross-sectional views ofsemiconductor structure 100 during a process of manufacturing thereof, following the step shown inFIG. 5 , according to an embodiment of the present invention. For example, one embodiment of the method includes selectively removing portions of dummy gate dielectric 104′ at the fin-sidewalls as well as fin caps 109 that cover at least one of thefins 103, and then growing a doped, or un-doped,epitaxial silicon layer 401 to coverfins 103 as well as areas whereoxide layer 102 had been removed. For example,epitaxial silicon layer 401 may be formed directly on top of exposedsilicon donor wafer 101 or, in the case whereepitaxial silicon layer 301 was optionally formed there, formed directly on top ofepitaxial silicon layer 301. As a result,epitaxial silicon layer 401 conductively connects epitaxial silicon layer 301 (or silicon donor wafer 101) tofins 103, which are now exposed following the removal of portions of dummy gate dielectric 104′ at sidewalls offins 103, and/or the removal ofcaps 109. In one embodiment, dummy gate dielectric 104′ and caps 109 may be left around or on top offins 103, which effectively insulatefins 103 fromepitaxial silicon layer 401.Epitaxial silicon layer 401 may connect to other areas ofepitaxial silicon layer 301 or other exposedsilicon donor wafer 101. - In areas where
oxide layer 102 was not removed,epitaxial silicon layer 401 may or may not form depending upon space constraints between two neighboringfins 103. For example, in a space wherein two neighboringfins 103 are closely placedepitaxial layer 401 may actually fill in the space because of the epitaxial formation from sidewalls of the fins even thoughepitaxial layer 401 does not form bottom-up from theunderneath oxide layer 102. On the other hand, in some areas part ofoxide layer 102 may still be exposed andepitaxial layer 401 may not fill completely to cover theoxide layer 102. Nevertheless, both situations are acceptable becauseepitaxial layer 401 will not be visible and not be exposed, in areas whereoxide layer 102 remains, when viewing from the bottom of thesilicon donor wafer 101. -
FIG. 7 is a demonstrative illustration of top and cross-sectional views ofsemiconductor structure 100 during a process of manufacturing thereof, following the step shown inFIG. 6 , according to an embodiment of the present invention. For example, one embodiment of the method includes preparing for a replacement-gate process. More specifically, the method includes applying a Pre-Metal Dielectric (PMD)layer 501 to blanket cover the top surface ofsemiconductor structure 100 by filling in gaps, such as areas between gate electrodes and filling in spaces between neighboring fins that are not completely filled up byepitaxial silicon layer 401. The method then follows with applying a planarization process, such as a chemical-mechanic-polishing (CMP) process, to create aplanar surface 510 as well as open updummy gate electrodes 106 by removing or polishing offcaps 105 on top ofdummy gate electrodes 106. Once the top portions ofdummy gate electrodes 106 are exposed, material ofdummy gate electrodes 106 is removed through a selective etching process to expose underneath dummy gate dielectric 104′, in the replacement gate region, that is still coveringfins 103. Here, it is noted that outside the replacement gate region dummygate dielectric layer 104′ has already been removed beforeepitaxial layer 401 is formed, as being illustrated inFIG. 6 . The dummygate dielectric layer 104′ in the replacement gate region is then removed as well through another selective etching process. According to one embodiment, the method then deposits a new gate dielectric layer (not shown) of, for example, a combination of very thin SiO2 and HfO2 onto the exposedsilicon fins 103 within the gate region, and fills in the opened gate region with a newgate electrode material 506. The newgate electrode material 506 may include, for example, TiN or other metallic layers such as tungsten or aluminum for improved conductivity. The new gate electrode material may be deposited into the openings, and excess of that may be removed through a follow-up CMP process. -
FIG. 8 is a demonstrative illustration of top and cross-sectional views ofsemiconductor structure 100 during a process of manufacturing thereof, following the step shown inFIG. 7 , according to an embodiment of the present invention. Following the finishing of replacement-gate process, the entire device orsemiconductor structure 100 may be flipped upside-down with thegate electrodes 506 andfins 103 situated at the bottom andsilicon donor wafer 101 at the top. The device side of the flippeddonor wafer 101, including theplanarized gate electrodes 506, is then bond assembled, for instance by low temperature oxide fusion bonding or thermally stable adhesive bond processing, to ahandle wafer 601. Thehandle wafer 601 will provide mechanical support fordevices 100 after thedonor wafer 101 is removed. Thehandle wafer 601 may be made of a similar or a dissimilar material to thedonor wafer 101, and may include for instance silicon, sapphire, silicon carbide. - According to one embodiment of present invention,
silicon donor wafer 101, now at the top, is then removed. The removal ofsilicon donor wafer 101 may be made through, for example, a CMP process or through a combination of mechanical grinding as well as wet or dry etching processes. The removing process of originalsilicon donor wafer 101 is preferably stopped before any significant erosion of theepitaxial layer 301 happens. In order to accomplish that, according to one embodiment of present invention, an appropriately-dopedepitaxial layer 301 may be used which may also work as an etch-stop layer. For example, a boron-dopedepitaxial stop layer 301 may provide sufficient etch selectivity when, after preliminary mechanical grinding, remaining portions of thesilicon donor wafer 101 are removed in TMAH (Tetramethylammonium hydroxide). - The removal of
silicon donor wafer 101 exposesoxide layer 102, which was not etch-removed in a previous step as being illustrated inFIG. 4 , as well as epitaxially grownsilicon layer 301, which may be doped and is self-aligned to source/drain regions of at least some of the FinFET transistors. -
FIG. 9 is a demonstrative illustration of top and cross-sectional views ofsemiconductor structure 100 during a process of manufacturing thereof, following the step shown inFIG. 8 , according to an embodiment of the present invention. For example, after the originalsilicon donor wafer 101 is removed and theepitaxial silicon layer 301 being exposed,silicide 701 may be formed at least in the top portion (viewed in the orientation ofFIG. 9 ) ofepitaxial silicon layer 301 through known or future developed technique. For example, in order to formsilicide 701, a layer of silicide-forming metal, such as titanium (Ti), cobalt (Co), or nickel (Ni), may first be deposited on top ofepitaxial layer 301. The deposition may be followed by a rapid thermal annealing (RTA) process which converts at least the top portion ofepitaxial layer 301 intosilicide 701. Any un-reacted portions of the silicide-forming metal are then selectively removed by wet etching, leavingsilicide 701 on exposed portions ofepitaxial layer 301. In one embodiment whereepitaxial silicon layer 401 was formed directly on top ofsilicon donor wafer 101, as being described previously with regard toFIG. 6 ,epitaxial silicon layer 401 is exposed andsilicide 701 is formed at a top portion (viewed in the orientation ofFIG. 9 ) ofepitaxial silicon layer 401. -
FIG. 10 is a demonstrative illustration of top and cross-sectional views ofsemiconductor structure 100 during a process of manufacturing thereof, following the step shown inFIG. 8 , according to an embodiment of the present invention. For example, one ormore contacts 702 to thegate electrode 506 may be formed following the removal ofsilicon donor wafer 101. The formation ofcontacts 702 may be performed through a combination of masking and RIE etching processes. For example, a contact masking pattern may first be formed on top ofoxide layer 102′ and then opening being made throughoxide layer 102′ in areas wherecontacts 702 are to be formed to expose underneathgate electrode 506. The openings are then filled with liner metals such as Ti, and contact materials such as tungsten (W) or copper (Cu), and polished to remove any excess aboveoxide layer 102. Silicide at the top surface of gate electrode (next to contact-to-gate 702) may be optionally formed in order to increase conductivity, depending upon material, structure, and other details ofgate electrode 506. - Following the formation of contact-to-gate 702 and silicide 701 (
FIG. 9 ) inepitaxial silicon layer 301 in the source/drain regions, a PMD layer (not shown) may be formed on top of device orsemiconductor structure 100 to coveroxide layer 102′,silicide 701, and contact-to-gate 702 for further processing. Optionally, contact-to-gate 702 may be formed after the formation of the PMD layer in connection with processes of creating additional vias in the PMD layer. Other standard processing steps may follow. - While certain features of the invention have been illustrated and described herein, many modifications, substitutions, changes, and equivalents will now occur to those of ordinary skill in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the spirit of the invention.
Claims (20)
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US13/542,003 US8637358B1 (en) | 2012-07-05 | 2012-07-05 | Field-effect-transistor with self-aligned diffusion contact |
US14/096,156 US8928091B2 (en) | 2012-07-05 | 2013-12-04 | Field-effect-transistor with self-aligned diffusion contact |
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US13/542,003 US8637358B1 (en) | 2012-07-05 | 2012-07-05 | Field-effect-transistor with self-aligned diffusion contact |
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US20150024584A1 (en) * | 2013-07-17 | 2015-01-22 | Global Foundries, Inc. | Methods for forming integrated circuits with reduced replacement metal gate height variability |
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EP3480842A1 (en) | 2017-11-02 | 2019-05-08 | IMEC vzw | Method for forming source/drain contacts |
EP3667733A1 (en) | 2018-12-13 | 2020-06-17 | IMEC vzw | Silicided fin junction for back-side connection |
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US7173305B2 (en) | 2003-04-08 | 2007-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned contact for silicon-on-insulator devices |
US6835618B1 (en) * | 2003-08-05 | 2004-12-28 | Advanced Micro Devices, Inc. | Epitaxially grown fin for FinFET |
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US8716091B2 (en) * | 2010-03-30 | 2014-05-06 | International Business Machines Corporation | Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain |
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US20150024584A1 (en) * | 2013-07-17 | 2015-01-22 | Global Foundries, Inc. | Methods for forming integrated circuits with reduced replacement metal gate height variability |
US20150221726A1 (en) * | 2014-02-04 | 2015-08-06 | Globalfoundries Inc. | Finfet with isolated source and drain |
US10128333B2 (en) | 2014-02-04 | 2018-11-13 | Globalfoundries Inc. | FinFET with isolated source and drain |
US10644169B2 (en) * | 2016-07-01 | 2020-05-05 | Semiconductor Manufacturing International (Shanghai) Corporation | Method of manufacturing a FinFET varactor |
CN111697051A (en) * | 2019-03-15 | 2020-09-22 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
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US20140091391A1 (en) | 2014-04-03 |
US8637358B1 (en) | 2014-01-28 |
US8928091B2 (en) | 2015-01-06 |
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