US20130330874A1 - Chemical bath deposition method for fabrication of semiconductor films - Google Patents
Chemical bath deposition method for fabrication of semiconductor films Download PDFInfo
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- US20130330874A1 US20130330874A1 US13/971,850 US201313971850A US2013330874A1 US 20130330874 A1 US20130330874 A1 US 20130330874A1 US 201313971850 A US201313971850 A US 201313971850A US 2013330874 A1 US2013330874 A1 US 2013330874A1
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000000224 chemical solution deposition Methods 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 239000004065 semiconductor Substances 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 238000006243 chemical reaction Methods 0.000 claims abstract description 50
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 239000002699 waste material Substances 0.000 claims abstract description 19
- 238000005507 spraying Methods 0.000 claims abstract description 10
- 239000007921 spray Substances 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 20
- 229910004613 CdTe Inorganic materials 0.000 claims description 18
- 239000010408 film Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- 239000006096 absorbing agent Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 10
- -1 Bi2S3 Inorganic materials 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- 229920003023 plastic Polymers 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 claims description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 4
- 229910005228 Ga2S3 Inorganic materials 0.000 claims description 2
- 229910020042 NbS2 Inorganic materials 0.000 claims description 2
- 235000014443 Pyrus communis Nutrition 0.000 claims description 2
- 229910002785 ReO3 Inorganic materials 0.000 claims description 2
- 229910019834 RhO2 Inorganic materials 0.000 claims description 2
- 229910008649 Tl2O3 Inorganic materials 0.000 claims description 2
- 229910052946 acanthite Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052956 cinnabar Inorganic materials 0.000 claims description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 2
- KZYDBKYFEURFNC-UHFFFAOYSA-N dioxorhodium Chemical compound O=[Rh]=O KZYDBKYFEURFNC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052949 galena Inorganic materials 0.000 claims description 2
- UHUWQCGPGPPDDT-UHFFFAOYSA-N greigite Chemical compound [S-2].[S-2].[S-2].[S-2].[Fe+2].[Fe+3].[Fe+3] UHUWQCGPGPPDDT-UHFFFAOYSA-N 0.000 claims description 2
- AEIXRCIKZIZYPM-UHFFFAOYSA-M hydroxy(oxo)iron Chemical compound [O][Fe]O AEIXRCIKZIZYPM-UHFFFAOYSA-M 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- KAEAMHPPLLJBKF-UHFFFAOYSA-N iron(3+) sulfide Chemical compound [S-2].[S-2].[S-2].[Fe+3].[Fe+3] KAEAMHPPLLJBKF-UHFFFAOYSA-N 0.000 claims description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
- 229910021519 iron(III) oxide-hydroxide Inorganic materials 0.000 claims description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 2
- YADSGOSSYOOKMP-UHFFFAOYSA-N lead dioxide Inorganic materials O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052953 millerite Inorganic materials 0.000 claims description 2
- 229910052961 molybdenite Inorganic materials 0.000 claims description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- HFLAMWCKUFHSAZ-UHFFFAOYSA-N niobium dioxide Inorganic materials O=[Nb]=O HFLAMWCKUFHSAZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052958 orpiment Inorganic materials 0.000 claims description 2
- QTQRFJQXXUPYDI-UHFFFAOYSA-N oxo(oxothallanyloxy)thallane Chemical compound O=[Tl]O[Tl]=O QTQRFJQXXUPYDI-UHFFFAOYSA-N 0.000 claims description 2
- YSZJKUDBYALHQE-UHFFFAOYSA-N rhenium trioxide Chemical compound O=[Re](=O)=O YSZJKUDBYALHQE-UHFFFAOYSA-N 0.000 claims description 2
- 239000008237 rinsing water Substances 0.000 claims description 2
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 claims description 2
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 claims description 2
- 229910052959 stibnite Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims 4
- 229910021641 deionized water Inorganic materials 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims 2
- 239000000376 reactant Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 21
- 230000008021 deposition Effects 0.000 abstract description 21
- 238000011282 treatment Methods 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 7
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 77
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical group OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 43
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 42
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 239000005083 Zinc sulfide Substances 0.000 description 9
- 229910052984 zinc sulfide Inorganic materials 0.000 description 9
- WLZRMCYVCSSEQC-UHFFFAOYSA-N cadmium(2+) Chemical compound [Cd+2] WLZRMCYVCSSEQC-UHFFFAOYSA-N 0.000 description 8
- 239000011259 mixed solution Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 239000012670 alkaline solution Substances 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000008364 bulk solution Substances 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000013082 photovoltaic technology Methods 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- QQUMTZVNJIGNQT-UHFFFAOYSA-N azane cadmium(2+) Chemical compound N.[Cd+2] QQUMTZVNJIGNQT-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001661 cadmium Chemical class 0.000 description 1
- 229940006463 cadmium cation Drugs 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten(VI) oxide Inorganic materials O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02485—Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a chemical bath deposition (CBD) method that can be used to deposit semiconductor thin films onto plane substrates. It is particularly useful for deposition of cadmium sulfide (CdS) or zinc sulfide (ZnS) semiconductor films for fabrication of thin film solar cells.
- CBD chemical bath deposition
- Photovoltaic technology has been developed under a background of global warming and exhausting of fossil fuels.
- the substitutes of traditional energy sources include nuclear energy and renewable energy. Among them, the nuclear energy will also be exhausted in the future. Moreover, the potential radiation contamination arising from the nuclear energy may bring serious problems to our environment, especially after the recent accident in a nuclear power station of Japan. Therefore, our future may greatly rely on renewable energy.
- the photovoltaic devices, or solar cells are playing a leading role in the renewable energy. This enormous future demand has dramatically pushed the development of photovoltaic technology.
- the second generation photovoltaic devices, thin film solar cells have appeared in the global market. They currently include three main types: amorphous silicon, CIGS and CdTe.
- an amorphous silicon cell has a low conversion efficiency that may reach up to 13% for a triple junction design. Besides, it has a problem of power degradation with initial illumination, but its technology is relatively mature.
- a CIGS solar cell possesses the highest conversion efficiency that is as high as 20%, higher than 17% efficiency of the CdTe ones.
- the elements of a CIGS absorber are located in Group IB-IIIA-VIA and the ones of a CdTe absorber in Group IIB-VIA. These absorber materials all belong to multi-component p-type semiconductors. For such a semiconductor material, the distribution of different components and stoichiometry may determine the quality of the material.
- Both of CIGS and CdTe solar cells contain a stack of absorber/buffer thin film layers to create an efficient photovoltaic heterojunction.
- a metal oxide window containing a highly resistive layer which has a band gap to transmit the sunlight to the absorber/buffer interface, and a lowly resistive layer to minimize the resistive losses and provide electric contacts, is deposited onto the absorber/buffer surface. This kind of design significantly reduces the charge carrier recombination in the window layer and/or in the window/buffer interface because most of the charge carrier generation and separation are localized within the absorber layer.
- compounds containing Cu, In, Ga, Se and S are generally referred to as CIGS(S), or Cu(In,Ga)(S,Se) 2 or CuIn 1 ⁇ x Ga x (S y Se 1 ⁇ y ) n , where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 and n is approximately 2, and have already been applied in the solar cell structures that gave rise to conversion efficiencies approaching 20%.
- Cu(In,Ga)(S,Se) 2 means the whole family of compounds with Ga/(Ga+In) molar ratio varying from 0 to 1 , and Se/(Se+S) molar ratio varying from 0 to 1.
- the molar ratios of Ga/(Ga+In) and Cu/(Ga+In) are very important factors to determine the compositions and the conversion efficiencies of the CIGS solar cells.
- a good CIGS solar cell requires a ratio of Cu/(Ga+In) between 0.75 and 0.95, and Ga/(Ga+In) between 0.3 and 0.6.
- the composition of a CdTe solar cell is much simple.
- the content of Cd is close to 50 % in the CdTe films.
- the Cd content may change after the deposition of a CdS layer and the subsequent annealing procedure.
- Both CIGS and CdTe films have to be annealed to form a uniform stoichiometric compound.
- a CIGS film is usually annealed at a temperature between 350 and 600° C. in a typical two-stage fabrication procedure.
- a CdS film may firstly be annealed in a superstrate configuration and a CdS/CdTe bilayer may be annealed in a substrate configuration.
- an n-type semiconductor buffer layer such as CdS, ZnS, or In 2 S 3 should be deposited onto a CIGS semiconductor absorber.
- TCO transparent conductive oxide
- ZnO zinc-oxide
- SnO 2 sulfur-oxide
- ITO indium-tin-oxide
- CdS may be deposited onto the surface of CdTe or TCO, depending on its substrate or superstrate configuration.
- a superstrate configuration may not be applicable on a flexible workpiece on the basis of current technology. Therefore, CdS should be deposited onto a CdTe surface to fabricate a CdTe thin film solar cell on a flexible substrate.
- the CdS thickness requirement is similar to a CIGS and a CdTe cell. They usually require a thin layer of CdS with about 100 nm or thinner.
- CdS CdS
- vacuum sputtering and evaporation evaporation
- spray pyrolysis evaporation
- chemical bath deposition CBD
- the CBD process is simple and requires cheap equipment.
- the disadvantage is that it produces lots of cadmium wastes and the post-treatment may be a heavy work.
- a common CdS chemical deposition bath contains a cadmium salt and a thiourea solution in ammonia medium.
- the ammonia medium in the solution plays two roles. On one hand, it provides OH ⁇ ions to hydrolyze thiourea, which slowly releases S 2 ⁇ into the solution. On the other hand, it controls the amount of Cd 2+ cations in the bath through the generation of its tetra-ammonium complexes that decompose to slowly release Cd 2+ into the solution.
- the slowly created Cd 2+ and S 2 ⁇ ions synthesize the CdS, some of which deposits onto the substrate surfaces.
- the reaction mechanism may be shown below:
- Cd(OH) 2 will dissolve in the ammonia alkaline solution to become [Cd(NH 3 ) 4 ] 2+ complex cations and not affect the quality of the CdS product.
- the CdS precipitation can take place either in the bulk solution to form colloids or at the immersed substrate surface to generate a layer of thin film.
- the layer deposition may take three stages: 1). Induction with the ion adsorption and formation of nucleation centers; 2) layer growth with an “ion by ion” mechanism; and 3) layer growth with a “cluster by cluster” mechanism.
- the solution must be freshly prepared to make the initial nucleation of CdS to take place directly on the surface of a substrate. Otherwise, the CdS deposition on the substrate surface may be powdery because the initial induction mainly takes place in the bulk solution and the deposition on the substrate may be directly from the “ion-by-ion” or even “cluster-by-cluster” stages.
- the formation of CdS in a reaction solution follows two directions, i.e., a homogeneous particle formation in the solution and a heterogeneous film growth on a substrate surface.
- 6,537,845 B1 describing a CdS chemical surface deposition onto glass substrates coated with CIGS films. Similar to a laboratory work, the same method can be applied to deposit CdS or ZnS thin film onto a plane substrate surface.
- a glass plane substrate can be immersed into a tank loaded with a freshly mixed reaction solution to react for a period of time at a constant temperature to obtain a CdS thin film.
- the backside of the substrate can be sealed with a piece of protective membrane. It requires an excellent solution circulation to achieve a good uniformity of the deposited thin films. A lot of solution may be consumed and a waste treatment may be a very heavy work.
- the apparatuses presented in the patents described above require some special designs to remain the solutions on the surfaces of the moving flexible substrates in a roll-to-roll process.
- the substrates might need to be bent using some magnetic or mechanical forces to hold the solutions on the tops. These applied forces may affect smooth movement of the flexible substrates. It might be difficult to remain the surfaces flat, especially for a wide web. It might always be a great challenge to remain backside of the substrates drying.
- These apparatus and methods cannot be applied in a plane substrate since its edges cannot be bent to maintain the solution on the front surface.
- I have recently submitted a patent application numbered Ser. No. 13/154481 to provide a spray method and apparatus to deposit semiconductor films onto a vertically travelling continuous flexible substrate in a roll-to-roll process.
- the present invention is modified from the submitted one to deposit semiconductor films onto a plane substrate with a continuous transportation manner.
- the method and apparatus are also simple and inexpensive without generating significant amount of waste solutions.
- the present invention provides a chemical bath deposition method to fabricate semiconductor thin films in preparation of solar cells. It possesses a unique design to vertically transport a series of plane substrates side by side continuously through the whole apparatus.
- the deposition solution is continuously sprayed onto the substrate surfaces through a whole process from a freshly mixed to an aged stage. During the whole process, the backsides of all the substrates remain dry.
- the structure of this equipment is very simple and inexpensive for fabrication.
- the preparation of semiconductor thin films with this apparatus is economical. It also saves volumes of the waste solution to greatly reduce expenses of the waste treatment.
- the present invention can be used for preparing thin film materials onto the surfaces of plane substrates via a CBD method. It is particularly useful to fabricate CdS or ZnS films in preparation of Group IB-IIIA-VIA and Group IIB-VIA thin film solar cells. In comparison with previous inventions, the presently invented apparatus should provide a more convenient and economical way in preparation of thin films through a CBD process.
- FIG. 1 shows a back view of an apparatus for a CBD deposition on plane substrates transported continuously by a stainless steel conveyor belt.
- FIG. 2 shows a top view of an apparatus for a CBD deposition on plane substrates transported continuously by a stainless steel conveyor belt.
- FIG. 3 illustrates a schematic diagram of air-solution spray nozzles.
- FIG. 4 is a schematic diagram illustrating a CdS buffer layer deposited onto a CIGS solar cell absorber layer by a chemical bath deposition process.
- the present invention provides a method for CBD deposition of CdS or ZnS thin films to fabricate Group IB-IIIA-VIA or Group IIB-VIA thin film solar cells on plane substrates.
- the present invention delivers the plane substrates side by side in a vertical position continuously through the whole CBD reactor.
- the materials of these plane substrates may include glass, plastics and ceramics. This process starts from cleaning the substrates, spraying a freshly mixed solution to the substrate surfaces, continuously spraying the aged solution to the substrates, washing away the reaction solution from the substrate surfaces while a desired thickness of the film is obtained, rinsing the freshly deposited thin films, and eventually to drying the films at the end.
- the length of this apparatus depends on the required thickness of thin films.
- the whole CBD reactor can be assembled with some modular segments.
- the apparatus is simply designed to result in an inexpensive fabrication. One does not have to worry how to hold a reaction solution on the substrate surface with the development of a thin film, which is requires a complicated mechanical design and significantly increases the cost to fabricate the reactor, especially for a wide substrate.
- the present invention makes the plane substrates continuously delivered side by side through the CBD reactor by a conveyor belt, which is advantage to a large scale of industrial manufacture.
- the present invention can remain the backside of a substrate dry and clean, which may greatly reduce amount of the waste solutions for chemical treatments and make the deposition easier.
- the present invention separates the waste compartment from the rinsing sections. This also significantly reduces the waste amount and amount of the rinsing water because it can be reused in the waste compartment.
- the conveyor belt brings the substrates side by side vertically travelling into the reaction chamber of the apparatus through a narrow slit on the left side. After completion of the reaction, the substrates move out of another narrow slit on the right wall side by side.
- the substrates coated with the thin films are then delivered through the heater 103 and released to the unloading rack 100 B when the belt temporarily stops, as shown in FIG. 1 and FIG. 2 .
- There are a series of rollers 101 illustrated as circles in FIG. 2 and dashed narrow rectangles in FIG. 1 , to control the conveyor belt movement.
- the length of this CBD reactor is adjustable by adding or reducing numbers of modular segments. Every modular segment has a structure with surrounding a front wall that faces the substrate surface to be deposited, a back wall facing the substrate backside, a top roof and a bottom floor. At least two or more modular segments are connected together to form an isolated chamber of the said CBD reactor. The beginning and the ending segments contain a sidewall where a narrow slit is vertically cut to allow the substrate to enter or leave the chamber.
- the chamber can be separated with the board 117 and 116 into three sections, i.e., a pre-cleaning section close to the unwinding unit, the reaction chamber (main section), and a rinsing section close to the winding unit at the end, as shown more clearly in FIG. 2 .
- Materials used to fabricate the modular segments must be chemical resistant, such as plastics, polymers, and ceramics. They are also required to resist heat up to 90° C. Especially for the bottom piece, some heating elements have to be installed underneath the solution groove 108 . It should be able to resist a higher temperature. If the front and/or the back walls are made from non-transparent materials, some inorganic or organic glass windows shall be opened for an inspection purpose.
- the internal surfaces of these inspection windows should be treated as hydrophobicity to avoid water condensing. Heights of the front wall, back wall and sidewalls may be between 0.3 and 2.5 meters, depending on the width of a substrate.
- the width of the reaction chamber ranges from 0.3 to 1.5 meters.
- the reactor is adapted to be used in a in a continuous manner to deliver the plane substrates side by side to carry out reactions at an elevated temperature inside the isolated reaction chamber.
- the said reaction chamber contains one or more sets of pump and spray pipe combinations. Every such a combination contains one solution pump 106 , one or more spray pipes 107 , and at least one or more spray nozzles 105 opened on the pipes.
- the spray pipes possess closed ends on the tops with diameters from 10 to 80 millimeters. Materials of the pipes and nozzles must be chemical resistant such as plastics, polymers and ceramics. They can also resist heat up to 90° C. Solution chambers of the pumps shall be chemical resistant as well. The metal bodies of the pumps should be protected from the corrosive atmosphere.
- the substrates When the substrates are delivered side by side into the reactor, it firstly passes a narrow slit inlet on the left wall into the apparatus. Outside the narrow slits, there are two or more columns of air knives 102 A, arranged along the front surface and the backside of the moving substrates, to gently blow preheated air into the chamber through the slit to prevent the atmosphere inside the chamber from leaking out. Similarly, two or more columns of air knives 102 B are arranged on the other side out of the chamber, as shown in FIG. 1 and FIG. 2 .
- the conveyor belt travels back after unloading the substrates, it has to go through another pair of narrow slits to enter the internal chamber of the reactor.
- the air knives 102 A and 102 B which are more clearly illustrated in FIG.
- the substrates After the substrates enter the chamber, they are firstly washed by preheated DI water introduced through the valve 112 and sprayed out of a column of spray nozzles 105 .
- the DI water will cover the whole substrate surfaces from the top to the bottom to clean the surfaces and wet them before CdS deposition. If the DI water cannot cover the substrate surfaces very well due to insufficient pressure, a booster pump may be used before the water enters the pre-clean chamber.
- the preheated DI water also helps to heat the substrates to a reaction temperature. This DI water washing section has been separated from the main reaction chamber with a board 117 . The used water flows through a solution outlet 110 A to exhaust without any special treatment.
- the substrates then move into the CBD reaction chamber.
- a solution mixing vessel 104 on top of the reactor. It can be installed inside the reaction chamber as well.
- three solution inlets introduce mother liquids into the mixing vessel through the valves 112 B, 113 and 114 .
- Valve 112 B delivers the preheated DI water
- Valve 113 carries one preheated reaction mother liquid such as Cd 2+ cation ammonia solution
- Valve 114 delivers another preheated reaction mother liquid such as thiourea solution. All of these three solutions are sprayed into the mixing vessel 104 .
- This mixing vessel possesses a oval or pear shape.
- the sprayed solutions swirl down around the round internal wall and pass a small opening on the bottom of the vessel. During this process, the solutions have been well mixed in just a couple of seconds.
- the bottom opening of the vessel connected to a pipe 107 with some spray nozzles 105 to spray the mixed solution onto the substrate surface from the top to the bottom.
- an air tube can be introduced to the nozzels as demanstrated on FIG. 3 .
- the solution pipe 302 is incorporated inside an air tube 301 .
- the solution flows from the top to the bottom, runs out of the nozzles 304 and is sprayed by the compressed air nozzles 303 .
- This device carries preheated compressed air to help the solution spray, similar to a spray pyrolysis process.
- the preheated air helps to remain a constant temperature inside the reaction chamber.
- the reacted solution flows back to the groove 108 again and is pumped up again with a next pump, as illustrated in FIG. 1 and FIG. 2 .
- the substrate movements to the right direction their surfaces are covered with the solutions pumped and sprayed from a series of the pump-spray pipe combinations.
- the substrate surfaces are continuously reacted from the freshly mixed solution to gradually aged solution until end of the CBD process.
- the deposited layers will go through the induction and film growth processes to achieve high quality thin films.
- density of the pumps and the spray pipes should be arranged in a way of covering and wetting the full substrate surfaces.
- the length of the reaction chamber can be determined by the substrate delivery speed and the designed reaction time. If a substrate delivery speed is 1 meter per minute and the reaction time is 10 minutes, for instance, a 10 meter long reaction chamber is necessary.
- the dashed line 119 represents a series of heating elements underneath the solution groove 108 .
- these heating elements can be fully program-controlled to heat the solution to a constant temperature.
- a board 111 crossover the whole chamber. It is designed to block the solution from spraying to the backside.
- the conveyor belt should be designed in this way—the left and right edges of the substrates can be tightly sealed to avoid the solution spraying onto the backsides of the substrates. Moreover, the spaces between two substrates are closed to avoid the solution penetrated to the backside of the belt.
- there is a row of air knives 120 as shown in FIG.
- the substrate surfaces are washed with the used DI water through a valve 115 .
- the DI water here has been used at the next rinsing stage but preheated before it is used in the reaction chamber.
- the preheated compressed air may be used here to help spraying if necessary.
- the aged solution and this washing solution are combined here and flow out of the waste outlet 109 on the equipment bottom floor. This waste solution contains cadmium, sulfur, ammonium and other chemicals. It needs to be seriously treated.
- the substrates go through the slit on a separation board 116 into the rinsing chamber, perhaps 99% of the residue of the reaction solution has been washed away in the previous washing stage.
- the substrate surfaces are further rinsed twice with clean DI water delivered through the valves 112 to make the deposited film totally clean.
- the rinsed water is collected through the water outlet 110 B on the equipment bottom floor, and a part of it is reused to wash the substrates in the previous reaction chamber.
- the cleaned substrates are now travelling out of the chamber isolated from outside atmosphere. When they go through the slit in the end wall, they are pre-dried by the air knives 102 B and further dried through a heating device 103 before they are released to the unloading rack 100 B and taken away.
- the atmosphere is controlled at a constant temperature with the heating elements on the bottom and the preheated air, DI water and the solutions.
- the waste gas containing ammonium is exhaused through the top outlet 118 to an evacuation system.
- the materials used to fabricate this apparatus must be chemically resistant. For example, stainless steel for any metal parts and ceramic bearings used for transmission.
- the grease is not recommended to be used inside the reaction chamber.
- the main body may be prepared from some glass or chemically resistant polymers such as high density polyethylene (PTFE), polypropylene (PP), and fluoroplastics (PTFE). Most chemically resistant polymer or plastic materials cannot support a very high temperature. If a reaction temperature is higher than 80° C., therefore, the PTFE may be a good choice.
- FIG. 4 is a schematic diagram illustrating the deposition of a CdS buffer 404 onto a CIGS absorber layer 403 that is coated on a piece of glass substrate 401 issolated with a Mo layer 402 as a back contact electrode.
- a Mo layer 402 as a back contact electrode.
- some 1.2 ⁇ 0.8 meter glass substrates coated with CIGS absorber layers may be used and delivered at a speed of 1 meter per minute.
- the CBD reaction chamber between the separation boards 117 and 116 is designed to be 12 meters long to meet a 12 minutes of reaction time.
- the conveyor belt may be fabricated with stainless steel and possesses frames to hold the substrates.
- the belt takes 2 seconds to load a substrate. If a CIGS surface is assumed to be covered with a 3 mm thick solution during the deposition, 3.6 liters of solution shall be consumed in one minute. If the substrates are arranged with a height of 1.2 meter and a width of 0.8 meter and only 1 cm space between 2 substrates, it takes about 53 seconds between two substrate delivery in order to coat a 100 nm thick CdS film onto a substrate with 0.96 m 2 . About 70 substrates can be coated in one hour with a consumption of the solution volume of about 0.22 m 3 . To increase the efficiency of the spray, one may want to increase the solution consumption to 6 liters per minute. Twelve spray nozzles 105 can be arranged from the top to the bottom.
- every spray nozzle covers the area of 10 ⁇ 10 cm 2 with 10 ml of solution spraying out every second.
- a solution consumption of 6 liters per minute may not be necessary.
- the total volume of the reaction solution used to complete these 70 pieces of substrates in one hour should be about 0.27 m 3 .
- Two starting mother liquids should be prepared in two mixing tanks and then stored in two storage tanks with heating capabilities.
- One starting mother liquid is cadmium cation in concentrated ammonium hydroxide.
- the other one is a concentrated thiourea solution.
- a small tank such as 500 liters should be enough to mix and store the thiourea solution, but a tank volume larger than 1 m 3 is necessary to mix and store the cadmium ammonium solution.
- a large DI water container with a volume of 3 m 3 or more is required for the solution mixing.
- Two starting mother liquids and DI water are preheated and delivered at a quantitative ratio and a total volume of more than 4.5 liters per minute to be mixed inside the vessel 104 and sprayed onto the travelling substrates.
- the substrates are washed with the preheated DI water that has been used to rinse the substrate surface in next stage.
- the preheated DI water that has been used to rinse the substrate surface in next stage.
- more than 10 liters of the waste solution per minute are poured into the waste outlet 109 .
- about 0.6 m 3 of the waste sulution will be generated. It suggests that a waste treatment capability of 0.7 m 3 per hour may be necessary.
- the substrate surfaces can then be further washed, dried and unloaded one by one. After completion of the production, one can use some diluted hydrochloric acid to clean the belt, the pumps and the spray pipes including the nozzles.
- the present invention can be used to fabricate many different deposition materials if their preparations follow a CBD process.
- These deposition materials include but are not limit to: Ag 2 S, Ag 2 O, Al 2 O 3 , As 2 S 3 , Bi 2 S 3 , CdS, CdO, CdTe, CdZnS, CoS, CuBiS 2 , CuInS 2 , Cu 2 S, CuS, CuSe, Cu 2 O, CuO, FeO(OH), Fe 2 O 3 , Fe 3 O 4 , Fe 2 S 3 , Fe 3 S 4 , Ga 2 S 3 , HgS, In 2 O 3 , In 2 S 3 , In 2 Se 3 , La 2 O 3 , MgO, MnS, Mn 0 2 , MoS 2 , NbO 2 , NbS 2 , NiS, NiO, PbHgS, PbS, PbO 2 , ReO 3 , RhO 2 , RuO 2 ,
Abstract
Description
- This invention claims the benefit of a divisional application of U.S. patent application Ser. No. 13/172,826 filed on Jun. 30, 2011 and published on Jan. 3, 2013 with a Publication No. US 2013/0005073 A1, which is incorporated herein by reference in its entirety.
- The present invention relates to a chemical bath deposition (CBD) method that can be used to deposit semiconductor thin films onto plane substrates. It is particularly useful for deposition of cadmium sulfide (CdS) or zinc sulfide (ZnS) semiconductor films for fabrication of thin film solar cells.
- Photovoltaic technology has been developed under a background of global warming and exhausting of fossil fuels. The substitutes of traditional energy sources include nuclear energy and renewable energy. Among them, the nuclear energy will also be exhausted in the future. Moreover, the potential radiation contamination arising from the nuclear energy may bring serious problems to our environment, especially after the recent accident in a nuclear power station of Japan. Therefore, our future may greatly rely on renewable energy. The photovoltaic devices, or solar cells, are playing a leading role in the renewable energy. This enormous future demand has dramatically pushed the development of photovoltaic technology. At present, the second generation photovoltaic devices, thin film solar cells, have appeared in the global market. They currently include three main types: amorphous silicon, CIGS and CdTe. In this thin film solar cell family, an amorphous silicon cell has a low conversion efficiency that may reach up to 13% for a triple junction design. Besides, it has a problem of power degradation with initial illumination, but its technology is relatively mature. By contrast, a CIGS solar cell possesses the highest conversion efficiency that is as high as 20%, higher than 17% efficiency of the CdTe ones. In the periodic table of the elements, the elements of a CIGS absorber are located in Group IB-IIIA-VIA and the ones of a CdTe absorber in Group IIB-VIA. These absorber materials all belong to multi-component p-type semiconductors. For such a semiconductor material, the distribution of different components and stoichiometry may determine the quality of the material.
- Both of CIGS and CdTe solar cells contain a stack of absorber/buffer thin film layers to create an efficient photovoltaic heterojunction. A metal oxide window containing a highly resistive layer, which has a band gap to transmit the sunlight to the absorber/buffer interface, and a lowly resistive layer to minimize the resistive losses and provide electric contacts, is deposited onto the absorber/buffer surface. This kind of design significantly reduces the charge carrier recombination in the window layer and/or in the window/buffer interface because most of the charge carrier generation and separation are localized within the absorber layer. In general, CIGS solar cell is a typical case in Group IB-IIIA-VIA compound semiconductors comprising some of the Group IB (Cu, Ag, Au), Group IIIA (B, Al, Ga, In, Tl) and Group VIA (O, S, Se, Te, Po) elements of the periodic table. These elements are excellent absorber materials for thin film solar cells. In particular, compounds containing Cu, In, Ga, Se and S are generally referred to as CIGS(S), or Cu(In,Ga)(S,Se)2 or CuIn1−xGax (SySe1−y)n, where 0≦x≦1, 0≦y≦1 and n is approximately 2, and have already been applied in the solar cell structures that gave rise to conversion efficiencies approaching 20%. Here, Cu(In,Ga)(S,Se)2 means the whole family of compounds with Ga/(Ga+In) molar ratio varying from 0 to 1, and Se/(Se+S) molar ratio varying from 0 to 1. It should be noted that the molar ratios of Ga/(Ga+In) and Cu/(Ga+In) are very important factors to determine the compositions and the conversion efficiencies of the CIGS solar cells. In general, a good CIGS solar cell requires a ratio of Cu/(Ga+In) between 0.75 and 0.95, and Ga/(Ga+In) between 0.3 and 0.6. In comparison with CIGS, the composition of a CdTe solar cell is much simple. In general, the content of Cd is close to 50% in the CdTe films. However, the Cd content may change after the deposition of a CdS layer and the subsequent annealing procedure. Close to the interface of the p-n-junction, for example, a CdSxTe1−x layer is formed with x usually not exceeding 0.06. However, x has a range changing from 0 to 1, which results in a compound from CdTe (x=0) to CdS (x=1).
- Both CIGS and CdTe films have to be annealed to form a uniform stoichiometric compound. A CIGS film is usually annealed at a temperature between 350 and 600° C. in a typical two-stage fabrication procedure. For a CdTe solar cell, a CdS film may firstly be annealed in a superstrate configuration and a CdS/CdTe bilayer may be annealed in a substrate configuration. After annealing, an n-type semiconductor buffer layer such as CdS, ZnS, or In2S3 should be deposited onto a CIGS semiconductor absorber. After then, transparent conductive oxide (TCO) materials, i.e., ZnO, SnO2, and ITO (indium-tin-oxide), should be deposited to form the solar cells. For a CdTe solar cell, CdS may be deposited onto the surface of CdTe or TCO, depending on its substrate or superstrate configuration. However, a superstrate configuration may not be applicable on a flexible workpiece on the basis of current technology. Therefore, CdS should be deposited onto a CdTe surface to fabricate a CdTe thin film solar cell on a flexible substrate. The CdS thickness requirement is similar to a CIGS and a CdTe cell. They usually require a thin layer of CdS with about 100 nm or thinner.
- There are some different technologies to deposit CdS, such as vacuum sputtering and evaporation, spray pyrolysis and chemical bath deposition. Among them, the chemical bath deposition (CBD) seems to produce the best result. In comparison with the vacuum methods, the CBD process is simple and requires cheap equipment. The disadvantage is that it produces lots of cadmium wastes and the post-treatment may be a heavy work.
- A common CdS chemical deposition bath contains a cadmium salt and a thiourea solution in ammonia medium. The ammonia medium in the solution plays two roles. On one hand, it provides OH− ions to hydrolyze thiourea, which slowly releases S2− into the solution. On the other hand, it controls the amount of Cd2+ cations in the bath through the generation of its tetra-ammonium complexes that decompose to slowly release Cd2+ into the solution. The slowly created Cd2+ and S2− ions synthesize the CdS, some of which deposits onto the substrate surfaces. The reaction mechanism may be shown below:
-
a. [Cd(NH3)4]2+=Cd2++4NH3 (1) -
- the instability constant of [Cd(NH3)4]2+: Ki=7.56×10−8.
-
b. (NH2)2CS+2OH−→CH2N2+2H2O+S2− (2) -
c. Cd2++S2−→CdS (3) - The stability product of CdS is: Ksp=1.4×10−29 in a strong alkaline solution. There is a possible side reaction below:
-
Cd2++2OH−→Cd(OH)2 (4) - The solubility product constant of Cd(OH)2 is: Ksp=7.2×10−15. However, Cd(OH)2 will dissolve in the ammonia alkaline solution to become [Cd(NH3)4]2+ complex cations and not affect the quality of the CdS product.
- The CdS precipitation can take place either in the bulk solution to form colloids or at the immersed substrate surface to generate a layer of thin film. According to a main theory, the layer deposition may take three stages: 1). Induction with the ion adsorption and formation of nucleation centers; 2) layer growth with an “ion by ion” mechanism; and 3) layer growth with a “cluster by cluster” mechanism.
- The key technology is that the solution must be freshly prepared to make the initial nucleation of CdS to take place directly on the surface of a substrate. Otherwise, the CdS deposition on the substrate surface may be powdery because the initial induction mainly takes place in the bulk solution and the deposition on the substrate may be directly from the “ion-by-ion” or even “cluster-by-cluster” stages. As reported in a U.S. Pat. No. 7,846,489 B2, which is incorporated herein by reference, the formation of CdS in a reaction solution follows two directions, i.e., a homogeneous particle formation in the solution and a heterogeneous film growth on a substrate surface. No matter which kind of mechanism is involved in the CdS formation in an alkaline solution, i.e., ion-by-ion, hydroxide cluster, or complex-decomposition mechanism, as discussed in literatures, a uniform growth of a CdS thin film on a substrate requires interaction between the substrate surface and un-reacted species firstly. A freshly prepared solution can meet this requirement very well. The reaction starting from a freshly prepared solution is not difficult to achieve in a laboratory work. The sample can be simply immersed into a freshly mixed solution at a certain reaction temperature. In fact, there are lots of literature reports relating to the CdS chemical bath deposition in laboratory works, including some patents such as U.S. Pat. No. 6,537,845 B1 describing a CdS chemical surface deposition onto glass substrates coated with CIGS films. Similar to a laboratory work, the same method can be applied to deposit CdS or ZnS thin film onto a plane substrate surface. For example, a glass plane substrate can be immersed into a tank loaded with a freshly mixed reaction solution to react for a period of time at a constant temperature to obtain a CdS thin film. During the reaction, the backside of the substrate can be sealed with a piece of protective membrane. It requires an excellent solution circulation to achieve a good uniformity of the deposited thin films. A lot of solution may be consumed and a waste treatment may be a very heavy work.
- Although there are plenty of patents and publications related to CdS deposition via CBD methods, the apparatus or equipments for industrially manufacturing CdS or ZnS buffer layers in solar cells with a CBD process are seldom reported. Recently, some CBD apparatus and methods were described in U.S. Pat. No. 7,541,067 B2, US. Pat. Appl. Pub. Nos. 2011/0039366 A1, 2009/0255461 A1 and 2009/0246908 A1, which are incorporated herein by references. In these patent and applications, the CdS deposition apparatus were designed for roll-to-roll manufacture processes in fabrications of thin film CIGS solar cells. In these apparatuses, the freshly mixed solutions were delivered onto the surfaces of travelling flexible substrates and remained there during the periods of deposition reactions to grow up the CdS thin films.
- The apparatuses presented in the patents described above require some special designs to remain the solutions on the surfaces of the moving flexible substrates in a roll-to-roll process. For example, the substrates might need to be bent using some magnetic or mechanical forces to hold the solutions on the tops. These applied forces may affect smooth movement of the flexible substrates. It might be difficult to remain the surfaces flat, especially for a wide web. It might always be a great challenge to remain backside of the substrates drying. These apparatus and methods cannot be applied in a plane substrate since its edges cannot be bent to maintain the solution on the front surface. I have recently submitted a patent application numbered Ser. No. 13/154481 to provide a spray method and apparatus to deposit semiconductor films onto a vertically travelling continuous flexible substrate in a roll-to-roll process. The present invention is modified from the submitted one to deposit semiconductor films onto a plane substrate with a continuous transportation manner. The method and apparatus are also simple and inexpensive without generating significant amount of waste solutions.
- The present invention provides a chemical bath deposition method to fabricate semiconductor thin films in preparation of solar cells. It possesses a unique design to vertically transport a series of plane substrates side by side continuously through the whole apparatus. The deposition solution is continuously sprayed onto the substrate surfaces through a whole process from a freshly mixed to an aged stage. During the whole process, the backsides of all the substrates remain dry. The structure of this equipment is very simple and inexpensive for fabrication. In addition, the preparation of semiconductor thin films with this apparatus is economical. It also saves volumes of the waste solution to greatly reduce expenses of the waste treatment.
- The present invention can be used for preparing thin film materials onto the surfaces of plane substrates via a CBD method. It is particularly useful to fabricate CdS or ZnS films in preparation of Group IB-IIIA-VIA and Group IIB-VIA thin film solar cells. In comparison with previous inventions, the presently invented apparatus should provide a more convenient and economical way in preparation of thin films through a CBD process.
-
FIG. 1 shows a back view of an apparatus for a CBD deposition on plane substrates transported continuously by a stainless steel conveyor belt. -
FIG. 2 shows a top view of an apparatus for a CBD deposition on plane substrates transported continuously by a stainless steel conveyor belt. -
FIG. 3 illustrates a schematic diagram of air-solution spray nozzles. -
FIG. 4 is a schematic diagram illustrating a CdS buffer layer deposited onto a CIGS solar cell absorber layer by a chemical bath deposition process. - The present invention provides a method for CBD deposition of CdS or ZnS thin films to fabricate Group IB-IIIA-VIA or Group IIB-VIA thin film solar cells on plane substrates. The present invention delivers the plane substrates side by side in a vertical position continuously through the whole CBD reactor. The materials of these plane substrates may include glass, plastics and ceramics. This process starts from cleaning the substrates, spraying a freshly mixed solution to the substrate surfaces, continuously spraying the aged solution to the substrates, washing away the reaction solution from the substrate surfaces while a desired thickness of the film is obtained, rinsing the freshly deposited thin films, and eventually to drying the films at the end. The length of this apparatus depends on the required thickness of thin films. The whole CBD reactor can be assembled with some modular segments. There are several advantages for this CBD reactor. Firstly, the apparatus is simply designed to result in an inexpensive fabrication. One does not have to worry how to hold a reaction solution on the substrate surface with the development of a thin film, which is requires a complicated mechanical design and significantly increases the cost to fabricate the reactor, especially for a wide substrate. Secondly, the present invention makes the plane substrates continuously delivered side by side through the CBD reactor by a conveyor belt, which is advantage to a large scale of industrial manufacture. Thirdly, the present invention can remain the backside of a substrate dry and clean, which may greatly reduce amount of the waste solutions for chemical treatments and make the deposition easier. Finally, the present invention separates the waste compartment from the rinsing sections. This also significantly reduces the waste amount and amount of the rinsing water because it can be reused in the waste compartment.
- In an embodiment as shown in
FIG. 1 , a back view diagram for a presently invented apparatus, theplane substrate 100 is loaded onto the stainlesssteel conveyor belt 121 that continuously travels clockwise along the arrow direction. This conveyor belt brings thesubstrate 100 vertically through the entire reactor and releases it at the end of the apparatus. The conveyor belt then travels back at a constant speed. The substrate delivery can be more clearly illustrated inFIG. 2 , a top view of the apparatus. The plane substrates are loaded in arack 100A. They can be pushed toward the conveyor belt one by one and installed to the belt in one or two seconds. During this period, the belt can be temporarily stopped and continuously travels forward after loading this substrate. Then the belt will wait for next piece of substrate. In this way, the conveyor belt brings the substrates side by side vertically travelling into the reaction chamber of the apparatus through a narrow slit on the left side. After completion of the reaction, the substrates move out of another narrow slit on the right wall side by side. The substrates coated with the thin films are then delivered through theheater 103 and released to theunloading rack 100B when the belt temporarily stops, as shown inFIG. 1 andFIG. 2 . There are a series ofrollers 101, illustrated as circles inFIG. 2 and dashed narrow rectangles inFIG. 1 , to control the conveyor belt movement. - In another aspect of the embodiment, the length of this CBD reactor is adjustable by adding or reducing numbers of modular segments. Every modular segment has a structure with surrounding a front wall that faces the substrate surface to be deposited, a back wall facing the substrate backside, a top roof and a bottom floor. At least two or more modular segments are connected together to form an isolated chamber of the said CBD reactor. The beginning and the ending segments contain a sidewall where a narrow slit is vertically cut to allow the substrate to enter or leave the chamber. The chamber can be separated with the
board FIG. 2 . Materials used to fabricate the modular segments must be chemical resistant, such as plastics, polymers, and ceramics. They are also required to resist heat up to 90° C. Especially for the bottom piece, some heating elements have to be installed underneath thesolution groove 108. It should be able to resist a higher temperature. If the front and/or the back walls are made from non-transparent materials, some inorganic or organic glass windows shall be opened for an inspection purpose. The internal surfaces of these inspection windows should be treated as hydrophobicity to avoid water condensing. Heights of the front wall, back wall and sidewalls may be between 0.3 and 2.5 meters, depending on the width of a substrate. The width of the reaction chamber ranges from 0.3 to 1.5 meters. The reactor is adapted to be used in a in a continuous manner to deliver the plane substrates side by side to carry out reactions at an elevated temperature inside the isolated reaction chamber. - In a various aspect of the embodiment, the said reaction chamber contains one or more sets of pump and spray pipe combinations. Every such a combination contains one
solution pump 106, one ormore spray pipes 107, and at least one ormore spray nozzles 105 opened on the pipes. The spray pipes possess closed ends on the tops with diameters from 10 to 80 millimeters. Materials of the pipes and nozzles must be chemical resistant such as plastics, polymers and ceramics. They can also resist heat up to 90° C. Solution chambers of the pumps shall be chemical resistant as well. The metal bodies of the pumps should be protected from the corrosive atmosphere. On the bottom floor, there is agroove 108 crossover the reaction chamber to collect gradually aged solution that flows synchronously along the same direction as the substrate moves. The pumps continuously pump the gradually aged solution out of the groove and spray it onto the substrate surface. The sprayed solution will flow downward to the floor into the groove. There are one or more pieces ofheating elements 119 underneath thegroove 108 to heat the solution up to an elevated temperature. - When the substrates are delivered side by side into the reactor, it firstly passes a narrow slit inlet on the left wall into the apparatus. Outside the narrow slits, there are two or more columns of
air knives 102A, arranged along the front surface and the backside of the moving substrates, to gently blow preheated air into the chamber through the slit to prevent the atmosphere inside the chamber from leaking out. Similarly, two or more columns ofair knives 102B are arranged on the other side out of the chamber, as shown inFIG. 1 andFIG. 2 . When the conveyor belt travels back after unloading the substrates, it has to go through another pair of narrow slits to enter the internal chamber of the reactor. Theair knives FIG. 2 , also blow the air into the chamber. After the substrates enter the chamber, they are firstly washed by preheated DI water introduced through thevalve 112 and sprayed out of a column ofspray nozzles 105. The DI water will cover the whole substrate surfaces from the top to the bottom to clean the surfaces and wet them before CdS deposition. If the DI water cannot cover the substrate surfaces very well due to insufficient pressure, a booster pump may be used before the water enters the pre-clean chamber. The preheated DI water also helps to heat the substrates to a reaction temperature. This DI water washing section has been separated from the main reaction chamber with aboard 117. The used water flows through a solution outlet 110A to exhaust without any special treatment. - The substrates then move into the CBD reaction chamber. As illustrated in
FIG. 1 , there is asolution mixing vessel 104 on top of the reactor. It can be installed inside the reaction chamber as well. In this mixing vessel, three solution inlets introduce mother liquids into the mixing vessel through thevalves Valve 113 carries one preheated reaction mother liquid such as Cd2+ cation ammonia solution, andValve 114 delivers another preheated reaction mother liquid such as thiourea solution. All of these three solutions are sprayed into the mixingvessel 104. This mixing vessel possesses a oval or pear shape. The sprayed solutions swirl down around the round internal wall and pass a small opening on the bottom of the vessel. During this process, the solutions have been well mixed in just a couple of seconds. The bottom opening of the vessel connected to apipe 107 with somespray nozzles 105 to spray the mixed solution onto the substrate surface from the top to the bottom. In order to increase the pressure to spray the solution, an air tube can be introduced to the nozzels as demanstrated onFIG. 3 . In this device, thesolution pipe 302 is incorporated inside anair tube 301. The solution flows from the top to the bottom, runs out of thenozzles 304 and is sprayed by thecompressed air nozzles 303. This device carries preheated compressed air to help the solution spray, similar to a spray pyrolysis process. The preheated air helps to remain a constant temperature inside the reaction chamber. - When the freshly mixed solution is sprayed onto the substrate surfaces, [Cd(NH3)4]2+ and (NH2)2CS will start to adsorb and nucleate on the surfaces at an induction stage. The used solution flows down into a
groove 108, which width is clearly illustrated inFIG. 2 , under the substrate and slowly flows to the direction as the substrate move. Then this used solution is pumped up by apump 106, and then sprayed onto the substrate surfaces again through thepipe 107 and thespray nozzles 105. In this case, the top end of the spray pipe is blocked and the solution is sprayed out with pressure out of thenozzles 105 from the top to the bottom. The reacted solution flows back to thegroove 108 again and is pumped up again with a next pump, as illustrated inFIG. 1 andFIG. 2 . With the substrate movements to the right direction, their surfaces are covered with the solutions pumped and sprayed from a series of the pump-spray pipe combinations. The substrate surfaces are continuously reacted from the freshly mixed solution to gradually aged solution until end of the CBD process. The deposited layers will go through the induction and film growth processes to achieve high quality thin films. During the whole CBD process, density of the pumps and the spray pipes should be arranged in a way of covering and wetting the full substrate surfaces. The length of the reaction chamber can be determined by the substrate delivery speed and the designed reaction time. If a substrate delivery speed is 1 meter per minute and the reaction time is 10 minutes, for instance, a 10 meter long reaction chamber is necessary. - In
FIG. 1 , the dashedline 119 represents a series of heating elements underneath thesolution groove 108. As a certain aspect of the embodiment, these heating elements can be fully program-controlled to heat the solution to a constant temperature. In front of the top edges of the substrates, there is aboard 111 crossover the whole chamber. It is designed to block the solution from spraying to the backside. The conveyor belt should be designed in this way—the left and right edges of the substrates can be tightly sealed to avoid the solution spraying onto the backsides of the substrates. Moreover, the spaces between two substrates are closed to avoid the solution penetrated to the backside of the belt. In back of the bottom edge of the belt, there is a row ofair knives 120, as shown inFIG. 2 , crossover the whole chamber, as illustrated inFIG. 2 . They gently blow the preheated air to the back bottom edges of the substrates to prevent the solution from wetting onto the back edges of the substrates. These arrangements may remain the entire backside of the conveyor belt and all of the substrate backs dry during the whole CBD process. - At the end of the reaction chamber as separated with a
board 116, the substrate surfaces are washed with the used DI water through avalve 115. The DI water here has been used at the next rinsing stage but preheated before it is used in the reaction chamber. Also, the preheated compressed air may be used here to help spraying if necessary. The aged solution and this washing solution are combined here and flow out of thewaste outlet 109 on the equipment bottom floor. This waste solution contains cadmium, sulfur, ammonium and other chemicals. It needs to be seriously treated. - When the substrates go through the slit on a
separation board 116 into the rinsing chamber, perhaps 99% of the residue of the reaction solution has been washed away in the previous washing stage. In this section, the substrate surfaces are further rinsed twice with clean DI water delivered through thevalves 112 to make the deposited film totally clean. The rinsed water is collected through the water outlet 110B on the equipment bottom floor, and a part of it is reused to wash the substrates in the previous reaction chamber. The cleaned substrates are now travelling out of the chamber isolated from outside atmosphere. When they go through the slit in the end wall, they are pre-dried by theair knives 102B and further dried through aheating device 103 before they are released to theunloading rack 100B and taken away. - Within the reaction chamber, the atmosphere is controlled at a constant temperature with the heating elements on the bottom and the preheated air, DI water and the solutions. The waste gas containing ammonium is exhaused through the
top outlet 118 to an evacuation system. Due to the corrosive property of the atmosphere inside the reaction chamber, the materials used to fabricate this apparatus must be chemically resistant. For example, stainless steel for any metal parts and ceramic bearings used for transmission. The grease is not recommended to be used inside the reaction chamber. The main body may be prepared from some glass or chemically resistant polymers such as high density polyethylene (PTFE), polypropylene (PP), and fluoroplastics (PTFE). Most chemically resistant polymer or plastic materials cannot support a very high temperature. If a reaction temperature is higher than 80° C., therefore, the PTFE may be a good choice. - The present invention can be demonstrated with an example to deposit a CdS thin film on the surface of a CIGS absorber layer, as shown in
FIG. 4 . This figure is a schematic diagram illustrating the deposition of aCdS buffer 404 onto aCIGS absorber layer 403 that is coated on a piece ofglass substrate 401 issolated with aMo layer 402 as a back contact electrode. As an example, some 1.2×0.8 meter glass substrates coated with CIGS absorber layers may be used and delivered at a speed of 1 meter per minute. The CBD reaction chamber between theseparation boards spray nozzles 105 can be arranged from the top to the bottom. In this way, every spray nozzle covers the area of 10×10 cm2 with 10 ml of solution spraying out every second. However, a solution consumption of 6 liters per minute may not be necessary. One can control the top spray nozzles with more solution volume and gradually reduce the sprayed amount from the top to the bottom because the solution flows down from the top to the bottom. Sizes and distribution of the sprayed solution droplets can be well controlled by controlling the air pressure within the nozzles for the freshly mixed solution and the pump pressures for the aged one. To be careful, one can select a spray rate of 4.5 liters per minute. The total volume of the reaction solution used to complete these 70 pieces of substrates in one hour should be about 0.27 m3. Two starting mother liquids should be prepared in two mixing tanks and then stored in two storage tanks with heating capabilities. One starting mother liquid is cadmium cation in concentrated ammonium hydroxide. The other one is a concentrated thiourea solution. A small tank such as 500 liters should be enough to mix and store the thiourea solution, but a tank volume larger than 1 m3 is necessary to mix and store the cadmium ammonium solution. In addition, a large DI water container with a volume of 3 m3 or more is required for the solution mixing. Two starting mother liquids and DI water are preheated and delivered at a quantitative ratio and a total volume of more than 4.5 liters per minute to be mixed inside thevessel 104 and sprayed onto the travelling substrates. Turn on all of the air knives at a constant air temperature between 65 and 75° C. Meanwhile, theheating elements 119 underneath thesolution groove 108 are adjusted to a temperature higher than 75° C. to remain a constant solution temperature between 65 and 75° C. as required. Turn on all the spray pumps 106 to remain the reaction under control. The pumps and the heating elements are all automatically controlled through an operation software. - At the end of the reation chamber, the substrates are washed with the preheated DI water that has been used to rinse the substrate surface in next stage. In order to remove the reaction residues from the CdS surface as more as possible, one may use 6 liters of DI water per minute. As a result, more than 10 liters of the waste solution per minute are poured into the
waste outlet 109. In one hour, about 0.6 m3 of the waste sulution will be generated. It suggests that a waste treatment capability of 0.7 m3 per hour may be necessary. By optimizing the washing process, one could reduce consumption of the washing solution to 5 liters per minute to minimize the waste treatment capability down to 0.5-0.6 m3 per hour. The substrate surfaces can then be further washed, dried and unloaded one by one. After completion of the production, one can use some diluted hydrochloric acid to clean the belt, the pumps and the spray pipes including the nozzles. - As the art described and exampled above, the present invention can be used to fabricate many different deposition materials if their preparations follow a CBD process. These deposition materials include but are not limit to: Ag2S, Ag2O, Al2O3, As2S3, Bi2S3, CdS, CdO, CdTe, CdZnS, CoS, CuBiS2, CuInS2, Cu2S, CuS, CuSe, Cu2O, CuO, FeO(OH), Fe2O3, Fe3O4, Fe2S3, Fe3S4, Ga2S3, HgS, In2O3, In2S3, In2Se3, La2O3, MgO, MnS, Mn0 2, MoS2, NbO2, NbS2, NiS, NiO, PbHgS, PbS, PbO2, ReO3, RhO2, RuO2, Ru2O3, Sb2S3, Si0 2, SnS, SnS2, SnO2, TiO2, TlS, Tl2O3, VO2, WO3, ZnO, ZnS, ZrO2, or combinations thereof.
- In particular, this apparatus and process are very useful to deposit CdS, ZnS, In2S3 or CdZnS window layers in manufacture of Group IB-IIIA-VIA and Group IIB-VIA solar cells onto the plane substrates with different widths. The equipment is easy to make, the process is easy to control, and the waste solutions are less.
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US20120264075A1 (en) * | 2011-04-12 | 2012-10-18 | Jiaxiong Wang | Assembled Reactor for Fabrications of Thin Film Solar Cell Absorbers through Roll-to-Roll Processes |
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Family Cites Families (11)
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US5922136A (en) * | 1997-03-28 | 1999-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-CMP cleaner apparatus and method |
TWI245578B (en) * | 2001-12-31 | 2005-12-11 | Ritdisplay Corp | Developing apparatus and method for developing organic electroluminescent display panels |
EE00584U1 (en) * | 2004-06-07 | 2006-01-16 | Tallinna Tehnikaülikool | A method of fabricating a CuInS2 absorber solar cell |
US7923281B2 (en) * | 2006-04-13 | 2011-04-12 | Solopower, Inc. | Roll-to-roll processing method and tools for electroless deposition of thin layers |
JP4946321B2 (en) * | 2006-09-29 | 2012-06-06 | 富士通セミコンダクター株式会社 | Substrate processing apparatus and substrate processing method |
KR101423611B1 (en) * | 2008-01-16 | 2014-07-30 | 삼성전자주식회사 | Substrate treating apparatus, exposing apparatus, and cleaning method of cleaning tool |
US8318530B2 (en) * | 2009-07-24 | 2012-11-27 | Solopower, Inc. | Solar cell buffer layer having varying composition |
CN102070304A (en) * | 2009-11-20 | 2011-05-25 | 正峰新能源股份有限公司 | Method for making cadmium sulfide thin film |
KR101092067B1 (en) * | 2009-12-04 | 2011-12-12 | 주식회사 디엠에스 | Chemical Bath Deposition apparatus of in-line type for manufacturing solar cell |
US8726829B2 (en) * | 2011-06-07 | 2014-05-20 | Jiaxiong Wang | Chemical bath deposition apparatus for fabrication of semiconductor films through roll-to-roll processes |
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US20120264075A1 (en) * | 2011-04-12 | 2012-10-18 | Jiaxiong Wang | Assembled Reactor for Fabrications of Thin Film Solar Cell Absorbers through Roll-to-Roll Processes |
US9915475B2 (en) * | 2011-04-12 | 2018-03-13 | Jiaxiong Wang | Assembled reactor for fabrications of thin film solar cell absorbers through roll-to-roll processes |
CN108461578A (en) * | 2018-04-09 | 2018-08-28 | 绍兴文理学院 | A kind of photovoltaic panel cleaning integrated apparatus |
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