US20130278135A1 - Multi discharging tube plasma reactor - Google Patents
Multi discharging tube plasma reactor Download PDFInfo
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- US20130278135A1 US20130278135A1 US13/730,277 US201213730277A US2013278135A1 US 20130278135 A1 US20130278135 A1 US 20130278135A1 US 201213730277 A US201213730277 A US 201213730277A US 2013278135 A1 US2013278135 A1 US 2013278135A1
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- Prior art keywords
- discharging
- discharging tube
- tube
- plasma
- plasma reactor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
Definitions
- the present invention relates to a plasma reactor having multi discharging tubes, and more particularly, to a plasma reactor having multi discharging tubes through which activated gas containing ion, free radical, atom and molecule is generated through plasma discharging, and different process gases are injected into multi discharging tubes in which solid, power and gas, etc., are plasma-treated with the activated gas to perform processes including cleaning process for semiconductor, and a plasma state can be maintained even at low power.
- a plasma discharging has been used for exciting gas to generate activated gas containing ion, free radical, atom and molecule.
- the activated gas is used widely in various fields, representatively in semiconductor manufacturing process, for example etching, deposition, cleaning and ashing, etc.
- remote plasma is used efficiently for manufacturing semiconductor by using plasma.
- the remote plasma is used for cleaning a process chamber or ashing to strip photo-resist.
- the remote plasma reactor (or called as a remote plasma generator) may use a Transformer Coupled Plasma Source (TCPS) or an Inductively Coupled Plasma Source (ICPS).
- TCPS Transformer Coupled Plasma Source
- ICPS Inductively Coupled Plasma Source
- the remote plasma reactor using the transformer coupled plasma source has a reactor body of a toroidal structure to which a magnetic core provided with a first wound coil is equipped.
- the remote plasma reactor using the inductively coupled plasma source has a reactor body of a hollow tube structure to which an inductively coupled antenna is equipped.
- the remote plasma reactor using the inductively coupled plasma source it can be operated at a comparatively low voltage environment due to its characteristics whereas a supply power has to be increased for operating the remote plasma reactor and in this case the inside of the reactor body may be damaged due to ion impact.
- a remote plasma reactor that is operated efficiently at a high or low voltage is required in accordance to various demands requested from semiconductor manufacturing process; however, a prior remote plasma reactor adapting one of the transformer coupled plasma source or the inductively coupled plasma source is not appropriately responded to the demands.
- the process chamber becomes large and thus a plasma source that can supply sufficiently and remotely high density activated gas is demanded.
- a substrate treating system in which two or more process chambers are provided in parallel in order to treat two or more process target-substrates in parallel for increasing production efficiency of a semiconductor device.
- the remotely activated ion gas is supplied to two or more process chambers, plasma reactors have been equipped separately to the respective process chambers.
- equipment cost is increased and operation cost becomes high.
- the different kinds of process gases are ionized more efficiently by separating them than by mixing them in accordance to the semiconductor manufacturing process; however, it is difficult to perform it in a single process chamber.
- the existing plasma reactor specially the transformer coupled plasma source has a problem that power greater than a predetermined level (for example, 3 kw) has to be supplied to maintain plasma and when the power becomes to the predetermined level or less, the plasma cannot be maintained.
- a predetermined level for example, 3 kw
- An object of the present invention is to provide a plasma reactor having multi discharging tubes, capable of supplying sufficiently and remotely the activated gas of a large capacity and a high density.
- Another object of the present invention is to provide a plasma reactor having multi discharging tubes of a hybrid type to have a wide operational region from a low voltage region to a high voltage region by installing integrally the inductively coupled plasma source or the capacitively coupled plasma source, in addition to the transformer coupled plasma source.
- Another object of the present invention is to provide a plasma reactor having multi discharging tubes, capable of providing two or more separated plasma discharging channels and generating independently ionized activated gas at the respective discharging channels to supply it to a process chamber.
- another object of the present invention is to provide a plasma reactor having multi discharging tubes, capable of operating efficiently two plasma sources with one power supply and driving alternatively one source in a combined configuration of the transformer coupled plasma source and other plasma sources or the combined source.
- another object of the present invention is to provide a plasma reactor having multi discharging tubes, capable of injecting different process gases into the multi discharging tubes of the plasma reactor of the present invention to perform processes including a cleaning process for semiconductor.
- Another object of the present invention is to provide a plasma reactor having multi discharging tubes, capable of maintaining a plasma state even at a low power.
- a plasma reactor having multi discharging tubes including: an upper hollow discharging tube having a gas inlet; a lower hollow discharging tube having a gas exit; a plurality of discharging tube bridges wherein an upper part and a lower part of each discharging tube bridge are coupled between the upper discharging tube and the lower discharging tube; a transformer coupled plasma source that is equipped on the discharging tube bridge and has a magnetic core on which a first winding coil is wound; and a AC switching power supply for supplying plasma generation power to the first winding coil.
- the plasma reactor having multi discharging tubes further includes an inductively coupled plasma source having a dielectric flat window that is equipped to an upper opening formed a part of the upper discharging tube and an inductive antenna flat coil that is arranged adjacently to the dielectric flat window wherein the inductive antenna flat coil and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- the plasma reactor having multi discharging tubes further includes an inductively coupled plasma source having a dielectric tube that is arranged to be protruded upwardly to an upper discharging tube opening formed a part of the upper discharging tube and an inductive antenna that is wound on the dielectric tube wherein the inductive antenna and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- the plasma reactor having multi discharging tubes further includes a capacitively couples plasma source provided with capacitively coupled electrodes to be equipped to at least two upper discharging tube openings formed at a part of the upper discharging tube wherein the capacitively coupled electrodes and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- At least two gas exits of the lower discharging tube are provided wherein the gas in-flowed through the gas inlet and the discharging channel via the upper discharging tube, the lower discharging tube and the plurality of discharging tube bridges is activated by a plasma-discharging, distributed and supplied by the gas exits to at least two process chambers.
- the plasma reactor having multi discharging tubes further includes an inductively coupled plasma source provided with a dielectric flat window that is equipped to an upper opening formed a part of the upper discharging tube and an inductive antenna flat coil that is arranged adjacently to the dielectric flat window wherein the inductive antenna flat coil and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- the plasma reactor having multi discharging tubes further includes an inductively coupled plasma source provided with the lower discharging tube opening that is formed a lower part of the lower discharging tube, a dielectric tube that is equipped to be protruded downwardly to the lower discharging tube opening, and an inductive antenna winding coil to be wound on the dielectric tube wherein the inductive antenna winding coil and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- the plasma reactor having multi discharging tubes of claim 1 comprising an inductively coupled plasma source provided with the upper discharging tube opening that is formed a lower part of the upper discharging tube, a dielectric tube that is equipped to be protruded downwardly to the upper discharging tube opening, and an inductive antenna to be wound on the dielectric tube wherein the inductive antenna and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- the plasma reactor having multi discharging tubes further includes an inductively coupled plasma source provided with the lower discharging tube opening that is formed an upper part of the lower discharging tube, a dielectric tube that is equipped to be protruded upwardly to the lower discharging tube opening, and an inductive antenna to be wound on the dielectric tube wherein the inductive antenna and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- the plasma reactor having multi discharging tubes further includes a capacitively coupled plasma source provided with a first and second openings which are formed on an upper part and a lower part of the upper discharging tube, respectively, upper capacitively coupled electrodes which are arranged to an upper part and a lower part of the first and second openings, respectively, a third and fourth openings which are formed on an upper part and a lower part of the lower discharging tube, respectively, and lower capacitively coupled electrodes which are arranged to an upper part and a lower part of the third and fourth openings, respectively wherein the upper and lower capacitively coupled electrodes and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- a capacitively coupled plasma source provided with a first and second openings which are formed on an upper part and a lower part of the upper discharging tube, respectively, upper capacitively coupled electrodes which are arranged to an upper part and a lower part of the first and second openings, respectively, a third and fourth openings which are formed on an
- the plasma reactor having multi discharging tubes further includes at least one electric insulative members provided between the upper multi discharging tubes and the upper discharging tube, or between the multi discharging tubes and the lower discharging tube.
- the upper discharging tube comprises a partition for dividing the inside thereof to have at least two independent discharging regions.
- the lower discharging tube includes a partition for dividing the inside thereof to have at least two independent discharging regions.
- the gas exit of the lower discharging tube includes: a plurality of adaptor coupled to two or more process chambers; and a gas valve that is provided to the adaptor and controls flow amount of the activated gas in-flowed into the process chamber.
- the process chamber comprises exhaust valves which are provided to the exhaust tubes, respectively, and control exhaust flow amount.
- the plasma reactor having multi discharging tubes further includes a plurality of gas inlets which are coupled separately to the two or more discharging regions of the upper discharging tube.
- the plasma reactor having multi discharging tubes further includes a plurality of gas exits which are coupled separately to two or more discharging regions of the lower discharging tube.
- FIG. 1 is a block diagram illustrating a multi discharging tube plasma reactor according to the present invention and a plasma treating system provided therewith;
- FIG. 2 is an exploded perspective view illustrating a multi discharging tube plasma reactor according to a first embodiment of the present invention
- FIG. 3 is a perspective view illustrating the assembled multi discharging tube plasma reactor as shown in FIG. 2 ;
- FIG. 4 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown in FIG. 2 ;
- FIG. 5 is a view illustrating exemplarily inductive magnetic flux in accordance to the current flowed through a first winding coil that is wound on a magnetic core as shown in FIG. 2 ;
- FIG. 6 is a partially exploded perspective view illustrating exemplarily the multi discharging tube plasma reactor wherein a cooling water channel is provided to a discharging tube bridge of the reactor;
- FIG. 7 is an exploded perspective view illustrating a multi discharging tube plasma reactor according to a second embodiment of the present invention.
- FIG. 8 is a perspective view illustrating the assembled multi discharging tube plasma reactor as shown in FIG. 7 ;
- FIG. 9 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown in FIG.
- FIG. 10 is a perspective view illustrating a multi discharging tube plasma reactor according to a third embodiment of the present invention.
- FIG. 11 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown in FIG. 10 ;
- FIG. 12 is a perspective view illustrating a multi discharging tube plasma reactor according to a fourth embodiment of the present invention.
- FIG. 13 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown in FIG. 12 ;
- FIG. 14 is a perspective view illustrating a multi discharging tube plasma reactor according to a fifth embodiment of the present invention.
- FIG. 15 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown in FIG. 14 ;
- FIG. 16 is a perspective view illustrating a dual process chamber equipped with the multi discharging tube plasma reactor according to a sixth embodiment of the present invention.
- FIG. 17 is a cross-sectional view illustrating the inside of the dual process chamber as shown in FIG. 16 ;
- FIG. 18 is a perspective view illustrating exemplarily a gas vale of an adaptor coupled to the dual process chamber and an exhaust valve added to an exhaust tube;
- FIG. 19 is a perspective view illustrating a multi discharging tube plasma reactor and a process chamber for multi treating according to a seventh embodiment of the present invention.
- FIG. 20 is a block diagram illustrating a plasma treating system of a multi discharging tube plasma reactor according to eighth embodiment of the present invention.
- FIG. 21 an exploded perspective view illustrating the multi discharging tube plasma reactor according to eighth embodiment of the present invention as shown in FIG. 20 ;
- FIG. 22 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown in FIG. 21 ;
- FIG. 23 is a perspective view illustrating a multi discharging tube plasma reactor according to a ninth embodiment of the present invention.
- FIG. 24 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown in FIG. 23 ;
- FIG. 25 is a perspective view illustrating a multi discharging tube plasma reactor according to a tenth embodiment of the present invention.
- FIG. 26 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown in FIG. 25 ;
- FIG. 27 is a perspective view illustrating a multi discharging tube plasma reactor according to an eleventh embodiment of the present invention.
- a plasma reactor 10 provided with multi discharging tubes according to the present invention is arranged on the outside of a process chamber 40 , as shown FIG. 1 and thus plasma gas is supplied remotely to the process chamber 40 .
- the plasma reactor 10 is provided with multi discharging tubes of an upper discharging tube 11 , a lower discharging tube 12 and a plurality of discharging tube bridges 13 .
- the plurality of discharging tube bridges 13 provides a plurality of discharging channels by coupling the upper discharging tube 11 and the lower discharging tube 12 .
- a plurality of magnetic cores 22 each having a first winding coil 21 are equipped to the plurality of discharging tube bridges 13 , respectively, to form a transformer coupled plasma source 20 .
- a gas inlet 14 is provided to the upper discharging tube 11 of the plasma reactor 10 and a gas exit 15 is provided to a central lower part of the lower discharging tube 12 .
- the gas exit 15 is coupled to a chamber gas inlet 47 through an adaptor 48 and the plasma gas generated in the plasma reactor 10 is supplied to the process chamber 40 through the adaptor 48 .
- the plasma reactor 10 is provided with the multi discharging tubes to generate plasma so that the plasma of a large capacity can be generated stably in a wide range from about 1 torr or less of a low pressure to about 10 torr or more of a high pressure.
- a substrate supporter 42 for supporting a process target-substrate 44 is provided in the process chamber 40 and the substrate supporter 42 may be coupled electrically to one or more bias power supply sources 70 , 72 through an impedance matcher 74 .
- the adaptor 48 may be provided with an insulation section for an electric insulation and a cooling channel for preventing over-heating.
- a baffle 46 for supplying the plasma gas may be provided between the substrate supporter 42 and the chamber gas inlet 47 in the process chamber 40 .
- the baffle 46 distributes uniformly and diffuses the plasma gas in-flowed through the chamber gas inlet 47 to the process-target substrate 44 .
- the process target-substrate 44 is, for example, a silicon wafer substrate, or glass substrate for fabricating liquid crystal display or plasma display, etc.
- a vacuum pump P for controlling the internal pressure of the process chamber 40 to a predetermined vacuum degree may be provided on one side of the process chamber 40 .
- the transformer coupled plasma source 20 is operated by receiving wireless frequency from the power supply 30 .
- the power supply 30 is provided with at least one switching semiconductor devices to include an AC switching power supply 32 for generating wireless frequency, a power control circuit 33 and a voltage supply 31 .
- the at least one switching semiconductor devices may include at least one switching transistors.
- the power supply 31 converts alternative voltage supplied externally into a constant voltage and supplies it to the AC switching power supply 32 .
- the Ac switching power supply 32 is operated through a control from the power control circuit 33 to generate wireless frequency.
- the power control circuit 33 controls the operation of the AC switching power supply 32 to control voltage and current of the wireless frequency and further the control of the power control circuit 33 is performed based on electric or optical parameter value related to at least one transformer coupled plasma source 20 and the plasma generated in the plasma reactor 10 .
- the power control circuit 33 is provided with a measurement circuit for measuring the electric or optical parameter value.
- the measurement circuit for measuring the electric and optical parameter of the plasma includes a current probe and an optical detector.
- the measurement circuit for measuring electric parameter of the transformer coupled plasma source 20 measures a driving current, a driving voltage and average power and maximum power of the transformer coupled plasma source 20 , and the voltage generated from the voltage supply 31 .
- the power control circuit 33 monitors continuously the related electric or optical parameter value through the measurement circuit and controls the AC switching power supply 32 while comparing the measured value to a reference value for a normal operation thereby controlling the voltage and current of the wireless frequency. Even though it is not shown concretely, a protection circuit may be provided on the power supply 30 in order to prevent electric loss that may be produced from an abnormal operation environment.
- the power supply 30 is coupled to a system controller 60 for controlling entirely the plasma treating system.
- the power supply 30 provides the operation state information of the plasma reactor 10 to the system controller 60 .
- the system controller 60 generates a control signal 62 for controlling entirely the operation of the plasma treating system and controls the operations of the plasma reactor 10 and the process chamber 40 .
- the plasma reactor 10 and the power supply 30 are separated physically. That is, the plasma reactor 10 and the power supply 30 are coupled electrically each other through a wireless frequency supply cable 35 . Through this separated configuration of the plasma reactor 10 and the power supply 30 , they can be easily maintained and repaired. However, the plasma reactor 10 and the power supply may be formed integrally.
- a multi discharging tube plasma reactor 10 a supplies remotely plasma gas to the process chamber 40 .
- the plasma reactor 10 a is provided with multi discharging tubes of an upper discharging tube 11 , a lower discharging tube 12 and a plurality of discharging tube bridges 13 .
- four discharging tube bridges 13 provide a plurality of discharging channels by coupling an upper opening 18 of the upper discharging tube 11 and a lower opening 16 of the lower discharging tube 12 .
- the magnetic cores 22 each having the first winding coil 21 are equipped to the plurality of discharging tube bridges 13 , respectively, to form a transformer coupled plasma source 20 .
- the magnetic core 22 may not be equipped to all of the discharging tube bridges 13 , and further the number of the discharging bridges 13 may be increased or decreased.
- the magnetic flux directions that are varied in accordance to a direction of the current flowing through the first winding coil 21 are shown exemplarily in FIG. 5 .
- the magnetic flux of one discharging tube bridge 13 is induced as the same direction as the facing discharging tube bridge and as an opposing direction to the adjacent discharging tube bridge so that the adjacent discharging tube bridges 13 form the discharging channels as a pair.
- the discharging tube bridge has a tube structure wherein a cooling water channel 13 a is provided therein and a cooling water inlet 13 b is provided on an outside thereof, as shown in FIG. 6 .
- the upper discharging tube 11 is provided with a gas inlet 14 and the lower discharging tube 12 is provided with a gas exit 15 coupled to the process chamber 40 .
- process gas is supplied from a gas supply (not shown)
- the gas in-flowed into the upper discharging tube 11 is distributed through a plurality of discharging tube bridges 13 to be flowed into the lower discharging tube 12 .
- power for generating plasma is supplied from the power supply 30 to the first winding coil 21 , the plasma discharging is performed via the upper discharging tube 11 , the plurality of discharging tube bridges 13 and the lower discharging tube 12 .
- the plasma reactor 10 a has a multi discharging tube configuration and the magnetic cores 22 having the first winding coil 21 are equipped to the plurality of discharging tube bridges 13 , respectively, and thus activated gas of a large capacity can be generated.
- the upper discharging tube 11 , the lower discharging tube 12 and the plurality of discharging tube bridges 13 may be made of metal material such as aluminum, stainless steel or copper. Further, they may be made of coated metal such as anodized aluminum or nickel plated aluminum.
- an insulation gap 17 may be provided at a proper location.
- the insulation gap 17 may be provided between the upper discharging tube 11 and the discharging tube bridge 13 , or between the lower discharging tube 12 and the discharging tube bridge 13 . Further, the insulation gap 17 may be provided on a middle region of the discharging tube bridge 13 . When the insulation gap 17 is provided, a vortex flow can be prevented from being induced in the plasma reactor 10 a along the plasma discharging channel.
- the upper discharging tube 11 , the lower discharging tube 12 and the plurality of discharging tube bridges 13 may be made of composite metal that is covalent-bonded with carbon nano tube. Further, they may be made of refractory metal. Additionally, they may be made entirely or partially of electric insulative material such as quartz or ceramic.
- the plasma reactor 10 a may be made of any material proper for performing intended plasma process.
- the plasma reactor 10 a may be shaped in accordance to the process-target substrate 13 and a proper configuration to generate uniform plasma, for example, circular configuration or quadrangle configuration, or any configurations.
- the process target-substrate 44 may be a wafer substrate, a glass substrate or a plastic substrate, etc., for manufacturing a semiconductor device, a display device and solar cell, etc.
- a partition may be provided in the plasma reactor 10 a between the upper discharging tube 11 and the lower discharging tube 12 to provide two or more independent discharging regions.
- a plurality of gas inlets are coupled to the upper discharging tubes 11 , corresponding to the respective independent discharging regions to activate the different gases at the independent discharging regions, respectively, and supply them to the process chamber 40 .
- the configuration of the reactor as described-above is efficiently used in case where process efficiency is decreased or problematic while the different gases are mixed to be ionized.
- a multi discharging tube reactor 10 b according to a second embodiment of the present invention has basically the same configuration as the plasma reactor 10 a according to the first embodiment of the present invention.
- an inductively coupled plasma source 50 is provided on an external ceiling of the upper discharging tube 11 .
- An opening 19 for arranging a window is provided on a ceiling of the upper discharging tube 11 and further a dielectric flat window 52 to cover the opening 19 is provided.
- An inductive antenna flat coil 51 is provided adjacent to the dielectric window 52 .
- the inductive antenna flat coil 51 of the inductively coupled plasma source 50 and the first winding coil 21 of the transformer coupled plasma source 20 are connected to the power supply 30 in series.
- the inductive antenna flat coil 51 and the first winding coil 21 may be connected to the power supply 30 in parallel.
- a switching circuit (not shown) may be provided for connecting them to the power supply in series or parallel, or connecting alternatively one of two to the power supply.
- the inductively coupled plasma source 50 When the inductively coupled plasma source 50 is added, a wide operational region of the reactor from a low voltage region to a high voltage region can be obtained stably. A plasma ignition can be generated easily and kept at the low voltage region by the inductively coupled plasma source 50 and further plasma of a large capacity can be kept at the high voltage region without damage to the inside of the reactor by the transformer coupled plasma source 20 . Two plasma sources can be operated efficiently with one power supply and further in a combined configuration of the inductively coupled plasma source 50 and the transformer coupled plasma source 20 , only one source may be driven alternatively or the combined source may be driven.
- the inductively coupled plasma source 50 b is provided to the upper discharging tube 11 to be co-used as a gas inlet.
- a dielectric tube 52 a to be co-used as the gas inlet is arranged to the upper discharging tube 11 and an inductive antenna winding coil 51 a is arranged to the dielectric tube 52 a , and thus the gas in-flowed through the dielectric tube 52 a is plasma-discharged at the moment while passing through the dielectric tube 52 a.
- a multi discharging tube plasma reactor 10 d in a multi discharging tube plasma reactor 10 d according to a fourth embodiment of the present invention, as shown in FIGS. 12 and 13 , unlike to the third embodiment, the dielectric tube 52 b is not co-used as a gas inlet.
- An upper discharging tube opening 54 is provided on a bottom of the upper discharging tube 11 and the dielectric tube 52 b and the inductive antenna winding coil 51 b are equipped to the opening. Since plasma is maintained continuously and partially on the inside of the upper discharging tube 11 by the inductively coupled plasma source 50 b , plasma discharging maintaining efficiency can be improved.
- a plasma reactor 10 e according to a fifth embodiment of the present invention has basically the same configuration as the plasma reactor 10 a in the first embodiment, as shown in FIGS. 14 and 15 .
- a first and second openings 81 , 82 are provided on a ceiling and a bottom of the upper discharging tube 11 , respectively, and a capacitively coupled plasma source 80 is provided with upper capacitively coupled electrodes 83 , 84 which are arranged to the openings.
- the upper capacitively coupled electrodes 83 , 84 of the capacitively coupled plasma source 80 and the first winding coil 26 of the transformer coupled plasma source 20 are connected to the power supply 30 in series.
- the upper capacitively coupled electrodes 83 , 84 and the first winding coil 26 may be connected to the power supply in parallel. Additionally, a switching circuit (not shown) may be provided for connecting them to the power supply in series or parallel, or connecting one of two to the power supply.
- the capacitively coupled plasma source 80 When the capacitively coupled plasma source 80 is added, a wide operational region of the reactor from a low voltage region to a high voltage region can be obtained stably. A plasma ignition can be generated easily and kept at the low voltage region by the capacitively coupled plasma source 80 and further plasma of a large capacity can be kept at the high voltage region without damage to the inside of the reactor by the transformer coupled plasma source 20 . Two plasma sources can be operated efficiently with one power supply and further in a combined configuration of the capacitively coupled plasma source 80 and the transformer coupled plasma source 20 , only one source may be driven alternatively or the combined source may be driven.
- a plasma reactor 10 f according to a sixth embodiment of the present invention has basically the same configuration as the plasma reactor 10 a in the first embodiment, as shown in FIGS. 16 and 17 .
- the gas inlet 14 is arranged on a ceiling of the upper discharging tube 11
- the lower discharging tube has two gas exits (not shown). Two gas exits are connected to two process chambers 40 a , 40 b , respectively, through the respective adaptors 91 , 92 .
- Two process chambers perform independently substrate treating process.
- the baffles 46 a , 46 b for distributing gas and the substrate supporters 42 a , 42 b on which the process target-substrates 44 a , 44 b are disposed are provided on the inside of the two process chambers 40 a , 40 b , respectively.
- an exhaust tube 93 for discharging gas is connected to a vacuum pump 94 .
- the gas valves 95 , 96 are provided to the two adaptors 91 a , 91 b , respectively, to control independently flow amount of the activated gas in-flowed into two process chambers 40 a , 40 b .
- the respective exhaust valves 97 , 98 are provided on the exhaust tube 93 to control independently exhaust amount.
- two or more gas exits are arranged to the lower discharging tube 12 of the plasma reactor 10 f and it is possible to supply multiply the activated gas to two or more process chambers.
- four gas exits (not shown) are provided to the lower discharging tube 12 and four adaptors 91 a - 91 d are coupled to them, respectively, and they may be used in a process chamber 40 c for multi treating simultaneously four process target-substrates.
- the plasma reactor 10 f of a multi discharging tube configuration can generate activated gas of a large capacity and thus a plurality of gas exits necessary to the lower discharging tube 12 are provided to supply simultaneously activated gas to a plurality of process chambers.
- a gas valve may be provided on the adaptor to control flow amount of the gas supplied, and when it is not necessary to supply the activated gas, the gas valve is cut off to stop alternatively the supply of the activated gas.
- plasma generation efficiency and control efficiency can be increased by adapting the inductively coupled plasma source 50 , 50 a , 50 b or the capacitively coupled plasma source 80 together with the transformer coupled plasma source 20 .
- a partition is provided on the upper discharging tube 11 and the lower discharging tube 12 to form independent discharging channels, respectively, and further the gas inlets are connected individually to supply separately different gases for generating activated gas.
- a multi discharging tube plasma reactor 10 b according to a eighth embodiment of the present invention, as shown in FIGS. 21 and 22 , the inductively coupled plasma source 50 is arranged to an upper part of the upper discharging tube 11 and a lower part of the lower discharging tube 12 .
- the upper discharging tube opening 53 for arranging a window is provided on an upper part of the upper discharging tube 11 and the upper discharging tube opening 54 is provided on a lower part of the lower discharging tube 12 .
- the dielectric flat window 52 is provided on the upper discharging tube opening 53 and the lower discharging tube opening 54 to cover the openings 53 , 54 .
- the inductive antenna flat coils 51 are arranged, respectively, adjacent to the dielectric flat window 52 .
- the inductive antenna flat coil 51 of the inductively coupled plasma source 50 and the first winding coil 21 of the transformer coupled plasma source 20 are connected to the power supply 30 in series, as shown in FIG. 20 .
- the inductive antenna flat coil 51 and the first winding coil 21 may be connected to the power supply 30 in parallel.
- a switching circuit (not shown) may be provided for connecting them to the power supply in series or parallel, or connecting one of two to the power supply.
- the inductively coupled plasma source 50 When the inductively coupled plasma source 50 is added as described-above, a wide operational region of the reactor from a low voltage region to a high voltage region can be obtained stably. A plasma ignition can be generated easily and kept at the low voltage region by the inductively coupled plasma source 50 and further plasma of a large capacity can be kept at the high voltage region without damage to the inside of the reactor by the transformer coupled plasma source 20 .
- two plasma sources 20 , 50 can be operated efficiently with one power supply and further in a combined configuration of the inductively coupled plasma source 50 and the transformer coupled plasma source 20 , only one source may be driven alternatively or the combined source may be driven.
- the inductively coupled plasma sources 50 a are provided to the upper discharging tube 11 and the gas exit 15 at a lower part of the lower discharging tube 12 , respectively, to be co-used as a gas inlet.
- an upper discharging tube opening 55 is provided at an upper part of the upper discharging tube 11 and further a lower discharging tube opening 56 is provided at a lower part of the lower discharging tube 12 .
- the dielectric tube 52 a is arranged to be protruded upwardly to the upper discharging tube opening 55 to be co-used as the gas inlet, and the inductive antenna winding coil 51 a is arranged to the dielectric tube 52 a . Accordingly, the gas in-flowed into the upper discharging tube 11 through the dielectric tube 52 a is plasma-discharged at the moment while passing through the dielectric tube 52 a.
- the gas passing through a plurality of discharging tube bridges 13 is plasma-discharged again while passing through the gas exit 15 on which the antenna winding coil 51 a is arranged before the gas is injected into the process chamber 40 .
- a power may be applied alternatively to the inductive antenna winding coil 51 a of the conductively coupled plasma source 50 a to operate it.
- the dielectric tube 52 b is not co-used as the gas inlet.
- the upper discharging tube opening 54 is provided at a bottom of the upper discharging tube 11 and the lower discharging tube opening 55 is provided at an upper part of the lower discharging tube 12 wherein the dielectric tubes 52 b protruding downwardly from the upper discharging tube opening 54 and upwardly from the lower discharging tube opening 55 are provided and the inductive antenna winding coil 51 b is arranged on an outer peripheral surface of the dielectric tube 52 b.
- the plasma discharging maintaining efficiency can be improved.
- a multi discharging tube plasma reactor 10 e has basically the same configuration as the plasma reactor 10 e in the fifth embodiment; however, in the plasma reactor 10 e of the eleventh embodiment, as shown in FIG. 27 , a first and second openings 81 , 82 are provided on an upper part and a lower part of the upper discharging tube 11 , respectively, and the capacitively coupled plasma source 80 is provided with the upper capacitively coupled electrodes 83 , 84 arranged to the openings.
- a third and fourth openings 85 , 86 are provided at an upper part and a lower part of the lower discharging tube 12 and the lower capacitively coupled electrodes 87 , 88 are arranged to the openings, respectively.
- the upper capacitively coupled electrodes 83 , 84 may be separated from the first and second openings 81 , 82 of the upper discharging tube 11 by an insulator (not indicated with reference numerals in drawings) and the lower capacitively coupled electrodes 87 , 88 may be separated from the third and fourth openings 85 , 86 of the lower discharging tube 12 by an insulator (not indicated with reference numerals in drawings).
- the upper and lower capacitively coupled electrodes 83 , 84 , 87 , 88 of the capacitively coupled plasma source 80 and the first winding coil 26 of the transformer coupled plasma source 20 are connected to the power supply 30 in series.
- the upper and lower capacitively coupled electrodes 83 , 84 , 87 , 88 and the first winding coil 26 may be connected to the power supply in parallel.
- a switching circuit (not shown) may be provided for connecting them to the power supply in series or parallel, or connecting one of two to the power supply.
- the capacitively coupled plasma source 80 When the capacitively coupled plasma source 80 is added as described-above, a wide operational region of the reactor from a low voltage region to a high voltage region can be obtained stably.
- a plasma ignition can be generated easily and kept at the low voltage region by the capacitively coupled plasma source 80 and further plasma of a large capacity can be kept at the high voltage region without damage to the inside of the reactor by the transformer coupled plasma source 20 .
- Two plasma sources can be operated efficiently with one power supply and further in a combined configuration of the capacitively coupled plasma source 80 and the transformer coupled plasma source 20 , only one source may be driven alternatively or the combined source may be driven.
- the transformer coupled plasma source 20 , the inductively coupled plasma sources 50 , 50 a , 50 b and the capacitively coupled plasma source 80 are arranged integrally and the plasma of the transformer coupled plasma source can be maintained continuously while a low power is supplied to operate the inductively coupled plasma sources 50 , 50 a , 50 b or the capacitively coupled plasma source 80 .
- the plasma of a large capacity can be generated stably in a wide pressure range from a low pressure to a high pressure (from 1 torr or less to 10 torr or more) by providing the multi discharging tubes.
- a partition is provided between the upper discharging tube and the lower discharging tube to form two or more independent discharging regions in which different gases are activated at the respective independent discharging regions to be supplied separately into the process chamber and thus a problem that process efficiency is decreased when the different gases are mixed to be ionized can be prevented.
- the plasma reactor can be operated in a wide operation range from a low pressure region to a high pressure region by installing integrally the inductively coupled plasma source or the capacitively coupled plasma source, in addition to the transformer coupled plasma source.
- two plasmas sources can be operated by using one power supply and in a combined configuration of the transformer coupled plasma source and other plasma sources, only one plasma source can be driven or the combined plasma source can be driven.
- Another object of the present invention is to provide a plasma reactor, capable of injecting different process gases into the multi discharging tubes to perform processes including a cleaning process for semiconductor.
- Another object of the present invention is to provide a plasma reactor having multi discharging tubes, capable of maintaining a plasma state even at a low power.
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Abstract
Description
- This application claims the benefit under 35 U.S.C. §119(a) the benefit of Korean Patent Application No. 10-2012-0040198 filed on Apr. 18, 2012, Korean Patent Application No. 10-2012-0040197 filed on Apr. 18, 2012 and Korean Patent Application No. 10-2012-0148032 filed on Dec. 18, 2012, the entire contents of which are incorporated herein by reference
- (a) Technical Field
- The present invention relates to a plasma reactor having multi discharging tubes, and more particularly, to a plasma reactor having multi discharging tubes through which activated gas containing ion, free radical, atom and molecule is generated through plasma discharging, and different process gases are injected into multi discharging tubes in which solid, power and gas, etc., are plasma-treated with the activated gas to perform processes including cleaning process for semiconductor, and a plasma state can be maintained even at low power.
- (b) Background Art
- Generally, a plasma discharging has been used for exciting gas to generate activated gas containing ion, free radical, atom and molecule. The activated gas is used widely in various fields, representatively in semiconductor manufacturing process, for example etching, deposition, cleaning and ashing, etc.
- Recently, wafer or LCD glass substrate for manufacturing semiconductor device has become much larger, and thus it is requested a plasma source which has a higher control ability of plasma ion energy, a treatment ability of a large area and easy expandability.
- Further, it has been known that remote plasma is used efficiently for manufacturing semiconductor by using plasma. For example, the remote plasma is used for cleaning a process chamber or ashing to strip photo-resist.
- The remote plasma reactor (or called as a remote plasma generator) may use a Transformer Coupled Plasma Source (TCPS) or an Inductively Coupled Plasma Source (ICPS).
- The remote plasma reactor using the transformer coupled plasma source has a reactor body of a toroidal structure to which a magnetic core provided with a first wound coil is equipped. The remote plasma reactor using the inductively coupled plasma source has a reactor body of a hollow tube structure to which an inductively coupled antenna is equipped.
- However, in case of the remote plasma reactor using the transformer coupled plasma source, it is operated at a comparatively high voltage environment due to its characteristics and thus it is extremely difficult to ignite plasma or maintain the ignited plasma at a low voltage environment.
- Further, in case of the remote plasma reactor using the inductively coupled plasma source, it can be operated at a comparatively low voltage environment due to its characteristics whereas a supply power has to be increased for operating the remote plasma reactor and in this case the inside of the reactor body may be damaged due to ion impact.
- In addition, a remote plasma reactor that is operated efficiently at a high or low voltage is required in accordance to various demands requested from semiconductor manufacturing process; however, a prior remote plasma reactor adapting one of the transformer coupled plasma source or the inductively coupled plasma source is not appropriately responded to the demands.
- Furthermore, as the process target-substrate becomes large, the process chamber becomes large and thus a plasma source that can supply sufficiently and remotely high density activated gas is demanded.
- Meanwhile, a substrate treating system is provided, in which two or more process chambers are provided in parallel in order to treat two or more process target-substrates in parallel for increasing production efficiency of a semiconductor device. At this time, when the remotely activated ion gas is supplied to two or more process chambers, plasma reactors have been equipped separately to the respective process chambers. However, in this case, equipment cost is increased and operation cost becomes high.
- However, when single plasma reactor is used for supplying the activated ion gas to two or more process chambers, a plasma reactor of a large capacity has to be used but ionized gas of a large capacity is difficult to be generated and supplied by using an existing plasma reactor.
- Further, the different kinds of process gases are ionized more efficiently by separating them than by mixing them in accordance to the semiconductor manufacturing process; however, it is difficult to perform it in a single process chamber.
- Meanwhile, the existing plasma reactor, specially the transformer coupled plasma source has a problem that power greater than a predetermined level (for example, 3 kw) has to be supplied to maintain plasma and when the power becomes to the predetermined level or less, the plasma cannot be maintained.
- The present invention has been made in an effort to solve the above-described problems associated with prior art. An object of the present invention is to provide a plasma reactor having multi discharging tubes, capable of supplying sufficiently and remotely the activated gas of a large capacity and a high density.
- Another object of the present invention is to provide a plasma reactor having multi discharging tubes of a hybrid type to have a wide operational region from a low voltage region to a high voltage region by installing integrally the inductively coupled plasma source or the capacitively coupled plasma source, in addition to the transformer coupled plasma source.
- Another object of the present invention is to provide a plasma reactor having multi discharging tubes, capable of providing two or more separated plasma discharging channels and generating independently ionized activated gas at the respective discharging channels to supply it to a process chamber.
- Further, another object of the present invention is to provide a plasma reactor having multi discharging tubes, capable of operating efficiently two plasma sources with one power supply and driving alternatively one source in a combined configuration of the transformer coupled plasma source and other plasma sources or the combined source.
- Additionally, another object of the present invention is to provide a plasma reactor having multi discharging tubes, capable of injecting different process gases into the multi discharging tubes of the plasma reactor of the present invention to perform processes including a cleaning process for semiconductor.
- Another object of the present invention is to provide a plasma reactor having multi discharging tubes, capable of maintaining a plasma state even at a low power.
- A plasma reactor having multi discharging tubes including: an upper hollow discharging tube having a gas inlet; a lower hollow discharging tube having a gas exit; a plurality of discharging tube bridges wherein an upper part and a lower part of each discharging tube bridge are coupled between the upper discharging tube and the lower discharging tube; a transformer coupled plasma source that is equipped on the discharging tube bridge and has a magnetic core on which a first winding coil is wound; and a AC switching power supply for supplying plasma generation power to the first winding coil.
- The plasma reactor having multi discharging tubes further includes an inductively coupled plasma source having a dielectric flat window that is equipped to an upper opening formed a part of the upper discharging tube and an inductive antenna flat coil that is arranged adjacently to the dielectric flat window wherein the inductive antenna flat coil and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- The plasma reactor having multi discharging tubes further includes an inductively coupled plasma source having a dielectric tube that is arranged to be protruded upwardly to an upper discharging tube opening formed a part of the upper discharging tube and an inductive antenna that is wound on the dielectric tube wherein the inductive antenna and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- The plasma reactor having multi discharging tubes further includes a capacitively couples plasma source provided with capacitively coupled electrodes to be equipped to at least two upper discharging tube openings formed at a part of the upper discharging tube wherein the capacitively coupled electrodes and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- At least two gas exits of the lower discharging tube are provided wherein the gas in-flowed through the gas inlet and the discharging channel via the upper discharging tube, the lower discharging tube and the plurality of discharging tube bridges is activated by a plasma-discharging, distributed and supplied by the gas exits to at least two process chambers.
- The plasma reactor having multi discharging tubes further includes an inductively coupled plasma source provided with a dielectric flat window that is equipped to an upper opening formed a part of the upper discharging tube and an inductive antenna flat coil that is arranged adjacently to the dielectric flat window wherein the inductive antenna flat coil and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- The plasma reactor having multi discharging tubes further includes an inductively coupled plasma source provided with the lower discharging tube opening that is formed a lower part of the lower discharging tube, a dielectric tube that is equipped to be protruded downwardly to the lower discharging tube opening, and an inductive antenna winding coil to be wound on the dielectric tube wherein the inductive antenna winding coil and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- The plasma reactor having multi discharging tubes of claim 1, comprising an inductively coupled plasma source provided with the upper discharging tube opening that is formed a lower part of the upper discharging tube, a dielectric tube that is equipped to be protruded downwardly to the upper discharging tube opening, and an inductive antenna to be wound on the dielectric tube wherein the inductive antenna and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- The plasma reactor having multi discharging tubes further includes an inductively coupled plasma source provided with the lower discharging tube opening that is formed an upper part of the lower discharging tube, a dielectric tube that is equipped to be protruded upwardly to the lower discharging tube opening, and an inductive antenna to be wound on the dielectric tube wherein the inductive antenna and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- The plasma reactor having multi discharging tubes further includes a capacitively coupled plasma source provided with a first and second openings which are formed on an upper part and a lower part of the upper discharging tube, respectively, upper capacitively coupled electrodes which are arranged to an upper part and a lower part of the first and second openings, respectively, a third and fourth openings which are formed on an upper part and a lower part of the lower discharging tube, respectively, and lower capacitively coupled electrodes which are arranged to an upper part and a lower part of the third and fourth openings, respectively wherein the upper and lower capacitively coupled electrodes and the first winding coil are coupled to the AC switching power supply in parallel or in series.
- The plasma reactor having multi discharging tubes further includes at least one electric insulative members provided between the upper multi discharging tubes and the upper discharging tube, or between the multi discharging tubes and the lower discharging tube.
- The upper discharging tube comprises a partition for dividing the inside thereof to have at least two independent discharging regions.
- The lower discharging tube includes a partition for dividing the inside thereof to have at least two independent discharging regions.
- The gas exit of the lower discharging tube includes: a plurality of adaptor coupled to two or more process chambers; and a gas valve that is provided to the adaptor and controls flow amount of the activated gas in-flowed into the process chamber.
- The process chamber comprises exhaust valves which are provided to the exhaust tubes, respectively, and control exhaust flow amount.
- The plasma reactor having multi discharging tubes further includes a plurality of gas inlets which are coupled separately to the two or more discharging regions of the upper discharging tube.
- The plasma reactor having multi discharging tubes further includes a plurality of gas exits which are coupled separately to two or more discharging regions of the lower discharging tube.
- The above and other features of the present invention will now be described in detail with reference to certain exemplary embodiments thereof illustrated in the accompanying drawings which are given hereinbelow by way of illustration only, and thus are not limitative of the present invention, and wherein:
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FIG. 1 is a block diagram illustrating a multi discharging tube plasma reactor according to the present invention and a plasma treating system provided therewith; -
FIG. 2 is an exploded perspective view illustrating a multi discharging tube plasma reactor according to a first embodiment of the present invention; -
FIG. 3 is a perspective view illustrating the assembled multi discharging tube plasma reactor as shown inFIG. 2 ; -
FIG. 4 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown inFIG. 2 ; -
FIG. 5 is a view illustrating exemplarily inductive magnetic flux in accordance to the current flowed through a first winding coil that is wound on a magnetic core as shown inFIG. 2 ; -
FIG. 6 is a partially exploded perspective view illustrating exemplarily the multi discharging tube plasma reactor wherein a cooling water channel is provided to a discharging tube bridge of the reactor; -
FIG. 7 is an exploded perspective view illustrating a multi discharging tube plasma reactor according to a second embodiment of the present invention; -
FIG. 8 is a perspective view illustrating the assembled multi discharging tube plasma reactor as shown inFIG. 7 ; -
FIG. 9 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown in FIG. -
FIG. 10 is a perspective view illustrating a multi discharging tube plasma reactor according to a third embodiment of the present invention; -
FIG. 11 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown inFIG. 10 ; -
FIG. 12 is a perspective view illustrating a multi discharging tube plasma reactor according to a fourth embodiment of the present invention; -
FIG. 13 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown inFIG. 12 ; -
FIG. 14 is a perspective view illustrating a multi discharging tube plasma reactor according to a fifth embodiment of the present invention; -
FIG. 15 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown inFIG. 14 ; -
FIG. 16 is a perspective view illustrating a dual process chamber equipped with the multi discharging tube plasma reactor according to a sixth embodiment of the present invention; -
FIG. 17 is a cross-sectional view illustrating the inside of the dual process chamber as shown inFIG. 16 ; -
FIG. 18 is a perspective view illustrating exemplarily a gas vale of an adaptor coupled to the dual process chamber and an exhaust valve added to an exhaust tube; -
FIG. 19 is a perspective view illustrating a multi discharging tube plasma reactor and a process chamber for multi treating according to a seventh embodiment of the present invention; -
FIG. 20 is a block diagram illustrating a plasma treating system of a multi discharging tube plasma reactor according to eighth embodiment of the present invention; -
FIG. 21 an exploded perspective view illustrating the multi discharging tube plasma reactor according to eighth embodiment of the present invention as shown inFIG. 20 ; -
FIG. 22 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown inFIG. 21 ; -
FIG. 23 is a perspective view illustrating a multi discharging tube plasma reactor according to a ninth embodiment of the present invention; -
FIG. 24 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown inFIG. 23 ; -
FIG. 25 is a perspective view illustrating a multi discharging tube plasma reactor according to a tenth embodiment of the present invention; -
FIG. 26 is a cross-sectional view illustrating the multi discharging tube plasma reactor as shown inFIG. 25 ; and -
FIG. 27 is a perspective view illustrating a multi discharging tube plasma reactor according to an eleventh embodiment of the present invention. - It should be understood that the appended drawings are not necessarily to scale, presenting a somewhat simplified representation of various preferred features illustrative of the basic principles of the invention. The specific design features of the present invention as disclosed herein, including, for example, specific dimensions, orientations, locations, and shapes will be determined in part by the particular intended application and use environment.
- In the figures, reference numbers refer to the same or equivalent parts of the present invention throughout the several figures of the drawing.
- Hereinafter, a battery system for a vehicle according to an exemplary embodiment of the present invention will be described with reference to the accompanying drawings.
- A
plasma reactor 10 provided with multi discharging tubes according to the present invention is arranged on the outside of aprocess chamber 40, as shownFIG. 1 and thus plasma gas is supplied remotely to theprocess chamber 40. Theplasma reactor 10 is provided with multi discharging tubes of an upper dischargingtube 11, a lower dischargingtube 12 and a plurality of discharging tube bridges 13. - Further, the plurality of discharging tube bridges 13 provides a plurality of discharging channels by coupling the upper discharging
tube 11 and the lower dischargingtube 12. - Here, a plurality of
magnetic cores 22 each having a first windingcoil 21 are equipped to the plurality of discharging tube bridges 13, respectively, to form a transformer coupledplasma source 20. - A
gas inlet 14 is provided to the upper dischargingtube 11 of theplasma reactor 10 and agas exit 15 is provided to a central lower part of the lower dischargingtube 12. - At this time, the
gas exit 15 is coupled to achamber gas inlet 47 through anadaptor 48 and the plasma gas generated in theplasma reactor 10 is supplied to theprocess chamber 40 through theadaptor 48. - Furthermore, the
plasma reactor 10 is provided with the multi discharging tubes to generate plasma so that the plasma of a large capacity can be generated stably in a wide range from about 1 torr or less of a low pressure to about 10 torr or more of a high pressure. - Further, a
substrate supporter 42 for supporting a process target-substrate 44 is provided in theprocess chamber 40 and thesubstrate supporter 42 may be coupled electrically to one or more biaspower supply sources impedance matcher 74. Theadaptor 48 may be provided with an insulation section for an electric insulation and a cooling channel for preventing over-heating. Abaffle 46 for supplying the plasma gas may be provided between thesubstrate supporter 42 and thechamber gas inlet 47 in theprocess chamber 40. - The
baffle 46 distributes uniformly and diffuses the plasma gas in-flowed through thechamber gas inlet 47 to the process-target substrate 44. - The process target-
substrate 44 is, for example, a silicon wafer substrate, or glass substrate for fabricating liquid crystal display or plasma display, etc. - Further, a vacuum pump P for controlling the internal pressure of the
process chamber 40 to a predetermined vacuum degree may be provided on one side of theprocess chamber 40. - Meanwhile, the transformer coupled
plasma source 20 is operated by receiving wireless frequency from thepower supply 30. Thepower supply 30 is provided with at least one switching semiconductor devices to include an AC switchingpower supply 32 for generating wireless frequency, apower control circuit 33 and avoltage supply 31. The at least one switching semiconductor devices, for example, may include at least one switching transistors. Thepower supply 31 converts alternative voltage supplied externally into a constant voltage and supplies it to the AC switchingpower supply 32. The Ac switchingpower supply 32 is operated through a control from thepower control circuit 33 to generate wireless frequency. - Furthermore, the
power control circuit 33 controls the operation of the AC switchingpower supply 32 to control voltage and current of the wireless frequency and further the control of thepower control circuit 33 is performed based on electric or optical parameter value related to at least one transformer coupledplasma source 20 and the plasma generated in theplasma reactor 10. For this purpose, thepower control circuit 33 is provided with a measurement circuit for measuring the electric or optical parameter value. For example, the measurement circuit for measuring the electric and optical parameter of the plasma includes a current probe and an optical detector. The measurement circuit for measuring electric parameter of the transformer coupledplasma source 20 measures a driving current, a driving voltage and average power and maximum power of the transformer coupledplasma source 20, and the voltage generated from thevoltage supply 31. - The
power control circuit 33 monitors continuously the related electric or optical parameter value through the measurement circuit and controls the AC switchingpower supply 32 while comparing the measured value to a reference value for a normal operation thereby controlling the voltage and current of the wireless frequency. Even though it is not shown concretely, a protection circuit may be provided on thepower supply 30 in order to prevent electric loss that may be produced from an abnormal operation environment. Thepower supply 30 is coupled to asystem controller 60 for controlling entirely the plasma treating system. Thepower supply 30 provides the operation state information of theplasma reactor 10 to thesystem controller 60. Thesystem controller 60 generates acontrol signal 62 for controlling entirely the operation of the plasma treating system and controls the operations of theplasma reactor 10 and theprocess chamber 40. - The
plasma reactor 10 and thepower supply 30 are separated physically. That is, theplasma reactor 10 and thepower supply 30 are coupled electrically each other through a wirelessfrequency supply cable 35. Through this separated configuration of theplasma reactor 10 and thepower supply 30, they can be easily maintained and repaired. However, theplasma reactor 10 and the power supply may be formed integrally. - A multi discharging
tube plasma reactor 10 a according to a first embodiment of the present invention, as shown inFIGS. 2 to 4 , supplies remotely plasma gas to theprocess chamber 40. Theplasma reactor 10 a is provided with multi discharging tubes of an upper dischargingtube 11, a lower dischargingtube 12 and a plurality of discharging tube bridges 13. For example, four dischargingtube bridges 13 provide a plurality of discharging channels by coupling anupper opening 18 of the upper dischargingtube 11 and alower opening 16 of the lower dischargingtube 12. Here, themagnetic cores 22 each having the first windingcoil 21 are equipped to the plurality of discharging tube bridges 13, respectively, to form a transformer coupledplasma source 20. Themagnetic core 22 may not be equipped to all of the discharging tube bridges 13, and further the number of the dischargingbridges 13 may be increased or decreased. - When four discharging
bridges 13 are provided and themagnetic cores 22 having the first windingcoil 21 are equipped to the respective discharging tube bridges 13, the magnetic flux directions that are varied in accordance to a direction of the current flowing through the first windingcoil 21 are shown exemplarily inFIG. 5 . As shown inFIG. 5 , the magnetic flux of one dischargingtube bridge 13 is induced as the same direction as the facing discharging tube bridge and as an opposing direction to the adjacent discharging tube bridge so that the adjacent dischargingtube bridges 13 form the discharging channels as a pair. The discharging tube bridge has a tube structure wherein acooling water channel 13 a is provided therein and a coolingwater inlet 13 b is provided on an outside thereof, as shown inFIG. 6 . - The upper discharging
tube 11 is provided with agas inlet 14 and the lower dischargingtube 12 is provided with agas exit 15 coupled to theprocess chamber 40. When process gas is supplied from a gas supply (not shown), the gas in-flowed into the upper dischargingtube 11 is distributed through a plurality of dischargingtube bridges 13 to be flowed into the lower dischargingtube 12. When power for generating plasma is supplied from thepower supply 30 to the first windingcoil 21, the plasma discharging is performed via the upper dischargingtube 11, the plurality of dischargingtube bridges 13 and the lower dischargingtube 12. - The
plasma reactor 10 a according to the first embodiment of the present invention has a multi discharging tube configuration and themagnetic cores 22 having the first windingcoil 21 are equipped to the plurality of discharging tube bridges 13, respectively, and thus activated gas of a large capacity can be generated. The upper dischargingtube 11, the lower dischargingtube 12 and the plurality of dischargingtube bridges 13 may be made of metal material such as aluminum, stainless steel or copper. Further, they may be made of coated metal such as anodized aluminum or nickel plated aluminum. - When the upper discharging
tube 11, the lower dischargingtube 12 and the plurality of dischargingtube bridges 13 are fabricated entirely with metal material, aninsulation gap 17 may be provided at a proper location. For example, theinsulation gap 17 may be provided between the upper dischargingtube 11 and the dischargingtube bridge 13, or between the lower dischargingtube 12 and the dischargingtube bridge 13. Further, theinsulation gap 17 may be provided on a middle region of the dischargingtube bridge 13. When theinsulation gap 17 is provided, a vortex flow can be prevented from being induced in theplasma reactor 10 a along the plasma discharging channel. - The upper discharging
tube 11, the lower dischargingtube 12 and the plurality of dischargingtube bridges 13 may be made of composite metal that is covalent-bonded with carbon nano tube. Further, they may be made of refractory metal. Additionally, they may be made entirely or partially of electric insulative material such as quartz or ceramic. Theplasma reactor 10 a may be made of any material proper for performing intended plasma process. - The
plasma reactor 10 a may be shaped in accordance to the process-target substrate 13 and a proper configuration to generate uniform plasma, for example, circular configuration or quadrangle configuration, or any configurations. The process target-substrate 44 may be a wafer substrate, a glass substrate or a plastic substrate, etc., for manufacturing a semiconductor device, a display device and solar cell, etc. - Even though it is not shown in the drawings, a partition may be provided in the
plasma reactor 10 a between the upper dischargingtube 11 and the lower dischargingtube 12 to provide two or more independent discharging regions. A plurality of gas inlets are coupled to the upper dischargingtubes 11, corresponding to the respective independent discharging regions to activate the different gases at the independent discharging regions, respectively, and supply them to theprocess chamber 40. The configuration of the reactor as described-above is efficiently used in case where process efficiency is decreased or problematic while the different gases are mixed to be ionized. - A multi discharging
tube reactor 10 b according to a second embodiment of the present invention, as shown inFIGS. 7 to 9 , has basically the same configuration as theplasma reactor 10 a according to the first embodiment of the present invention. However, in theplasma reactor 10 b of the second embodiment, an inductively coupledplasma source 50 is provided on an external ceiling of the upper dischargingtube 11. Anopening 19 for arranging a window is provided on a ceiling of the upper dischargingtube 11 and further a dielectricflat window 52 to cover theopening 19 is provided. An inductive antennaflat coil 51 is provided adjacent to thedielectric window 52. - The inductive antenna
flat coil 51 of the inductively coupledplasma source 50 and the first windingcoil 21 of the transformer coupledplasma source 20 are connected to thepower supply 30 in series. However, the inductive antennaflat coil 51 and the first windingcoil 21 may be connected to thepower supply 30 in parallel. Additionally, a switching circuit (not shown) may be provided for connecting them to the power supply in series or parallel, or connecting alternatively one of two to the power supply. - When the inductively coupled
plasma source 50 is added, a wide operational region of the reactor from a low voltage region to a high voltage region can be obtained stably. A plasma ignition can be generated easily and kept at the low voltage region by the inductively coupledplasma source 50 and further plasma of a large capacity can be kept at the high voltage region without damage to the inside of the reactor by the transformer coupledplasma source 20. Two plasma sources can be operated efficiently with one power supply and further in a combined configuration of the inductively coupledplasma source 50 and the transformer coupledplasma source 20, only one source may be driven alternatively or the combined source may be driven. - Meanwhile, in a multi discharging
tube plasma reactor 10 c according to a third embodiment of the present invention, unlike to the second embodiment as described-above, the inductively coupledplasma source 50 b is provided to the upper dischargingtube 11 to be co-used as a gas inlet. Adielectric tube 52 a to be co-used as the gas inlet is arranged to the upper dischargingtube 11 and an inductiveantenna winding coil 51 a is arranged to thedielectric tube 52 a, and thus the gas in-flowed through thedielectric tube 52 a is plasma-discharged at the moment while passing through thedielectric tube 52 a. - In a multi discharging
tube plasma reactor 10 d according to a fourth embodiment of the present invention, as shown inFIGS. 12 and 13 , unlike to the third embodiment, thedielectric tube 52 b is not co-used as a gas inlet. An upper dischargingtube opening 54 is provided on a bottom of the upper dischargingtube 11 and thedielectric tube 52 b and the inductiveantenna winding coil 51 b are equipped to the opening. Since plasma is maintained continuously and partially on the inside of the upper dischargingtube 11 by the inductively coupledplasma source 50 b, plasma discharging maintaining efficiency can be improved. - Meanwhile, a
plasma reactor 10 e according to a fifth embodiment of the present invention has basically the same configuration as theplasma reactor 10 a in the first embodiment, as shown inFIGS. 14 and 15 . However, in theplasma reactor 10 e of the fifth embodiment, a first andsecond openings tube 11, respectively, and a capacitively coupledplasma source 80 is provided with upper capacitively coupledelectrodes electrodes plasma source 80 and the first windingcoil 26 of the transformer coupledplasma source 20 are connected to thepower supply 30 in series. However, the upper capacitively coupledelectrodes coil 26 may be connected to the power supply in parallel. Additionally, a switching circuit (not shown) may be provided for connecting them to the power supply in series or parallel, or connecting one of two to the power supply. - When the capacitively coupled
plasma source 80 is added, a wide operational region of the reactor from a low voltage region to a high voltage region can be obtained stably. A plasma ignition can be generated easily and kept at the low voltage region by the capacitively coupledplasma source 80 and further plasma of a large capacity can be kept at the high voltage region without damage to the inside of the reactor by the transformer coupledplasma source 20. Two plasma sources can be operated efficiently with one power supply and further in a combined configuration of the capacitively coupledplasma source 80 and the transformer coupledplasma source 20, only one source may be driven alternatively or the combined source may be driven. - Meanwhile, a
plasma reactor 10 f according to a sixth embodiment of the present invention has basically the same configuration as theplasma reactor 10 a in the first embodiment, as shown inFIGS. 16 and 17 . However, thegas inlet 14 is arranged on a ceiling of the upper dischargingtube 11, and the lower discharging tube has two gas exits (not shown). Two gas exits are connected to twoprocess chambers respective adaptors process chambers process chambers exhaust tube 93 for discharging gas is connected to a vacuum pump 94. - Furthermore, as shown in
FIG. 18 , the gas valves 95, 96 are provided to the twoadaptors process chambers exhaust tube 93 to control independently exhaust amount. - As described-above, two or more gas exits are arranged to the lower discharging
tube 12 of theplasma reactor 10 f and it is possible to supply multiply the activated gas to two or more process chambers. For example, as shown inFIG. 19 , in the multi discharging tube plasma reactor according to a seventh embodiment of the present invention, four gas exits (not shown) are provided to the lower dischargingtube 12 and fouradaptors 91 a-91 d are coupled to them, respectively, and they may be used in aprocess chamber 40 c for multi treating simultaneously four process target-substrates. - The
plasma reactor 10 f of a multi discharging tube configuration can generate activated gas of a large capacity and thus a plurality of gas exits necessary to the lower dischargingtube 12 are provided to supply simultaneously activated gas to a plurality of process chambers. If necessary, a gas valve may be provided on the adaptor to control flow amount of the gas supplied, and when it is not necessary to supply the activated gas, the gas valve is cut off to stop alternatively the supply of the activated gas. - Like in the embodiments as described-above, plasma generation efficiency and control efficiency can be increased by adapting the inductively coupled
plasma source plasma source 80 together with the transformer coupledplasma source 20. A partition is provided on the upper dischargingtube 11 and the lower dischargingtube 12 to form independent discharging channels, respectively, and further the gas inlets are connected individually to supply separately different gases for generating activated gas. - Meanwhile, a multi discharging
tube plasma reactor 10 b according to a eighth embodiment of the present invention, as shown inFIGS. 21 and 22 , the inductively coupledplasma source 50 is arranged to an upper part of the upper dischargingtube 11 and a lower part of the lower dischargingtube 12. The upper dischargingtube opening 53 for arranging a window is provided on an upper part of the upper dischargingtube 11 and the upper dischargingtube opening 54 is provided on a lower part of the lower dischargingtube 12. - Further, the dielectric
flat window 52 is provided on the upper dischargingtube opening 53 and the lower dischargingtube opening 54 to cover theopenings flat window 52. - Furthermore, the inductive antenna
flat coil 51 of the inductively coupledplasma source 50 and the first windingcoil 21 of the transformer coupledplasma source 20 are connected to thepower supply 30 in series, as shown inFIG. 20 . However, the inductive antennaflat coil 51 and the first windingcoil 21 may be connected to thepower supply 30 in parallel. Additionally, a switching circuit (not shown) may be provided for connecting them to the power supply in series or parallel, or connecting one of two to the power supply. - When the inductively coupled
plasma source 50 is added as described-above, a wide operational region of the reactor from a low voltage region to a high voltage region can be obtained stably. A plasma ignition can be generated easily and kept at the low voltage region by the inductively coupledplasma source 50 and further plasma of a large capacity can be kept at the high voltage region without damage to the inside of the reactor by the transformer coupledplasma source 20. - Furthermore, two
plasma sources plasma source 50 and the transformer coupledplasma source 20, only one source may be driven alternatively or the combined source may be driven. - In a multi discharging
tube plasma reactor 10 a according to a ninth embodiment of the present invention, as shown inFIGS. 23 and 24 , the inductively coupledplasma sources 50 a are provided to the upper dischargingtube 11 and thegas exit 15 at a lower part of the lower dischargingtube 12, respectively, to be co-used as a gas inlet. - At this time, an upper discharging
tube opening 55 is provided at an upper part of the upper dischargingtube 11 and further a lower dischargingtube opening 56 is provided at a lower part of the lower dischargingtube 12. - Furthermore, the
dielectric tube 52 a is arranged to be protruded upwardly to the upper dischargingtube opening 55 to be co-used as the gas inlet, and the inductiveantenna winding coil 51 a is arranged to thedielectric tube 52 a. Accordingly, the gas in-flowed into the upper dischargingtube 11 through thedielectric tube 52 a is plasma-discharged at the moment while passing through thedielectric tube 52 a. - Further, the gas passing through a plurality of discharging tube bridges 13 is plasma-discharged again while passing through the
gas exit 15 on which theantenna winding coil 51 a is arranged before the gas is injected into theprocess chamber 40. - Furthermore, a power may be applied alternatively to the inductive
antenna winding coil 51 a of the conductively coupledplasma source 50 a to operate it. - Meanwhile, in a multi discharging
tube plasma reactor 10 d according to a tenth embodiment of the present invention, as shown inFIGS. 25 and 26 , thedielectric tube 52 b is not co-used as the gas inlet. The upper dischargingtube opening 54 is provided at a bottom of the upper dischargingtube 11 and the lower dischargingtube opening 55 is provided at an upper part of the lower dischargingtube 12 wherein thedielectric tubes 52 b protruding downwardly from the upper dischargingtube opening 54 and upwardly from the lower dischargingtube opening 55 are provided and the inductiveantenna winding coil 51 b is arranged on an outer peripheral surface of thedielectric tube 52 b. - Since the plasma is maintained continuously and partially inside the upper discharging
tube 11 and the lower dischargingtube 12 by the inductively coupledplasma source 50 b, the plasma discharging maintaining efficiency can be improved. - Furthermore, a multi discharging
tube plasma reactor 10 e according to a eleventh embodiment of the present invention has basically the same configuration as theplasma reactor 10 e in the fifth embodiment; however, in theplasma reactor 10 e of the eleventh embodiment, as shown inFIG. 27 , a first andsecond openings tube 11, respectively, and the capacitively coupledplasma source 80 is provided with the upper capacitively coupledelectrodes - Furthermore, a third and
fourth openings tube 12 and the lower capacitively coupledelectrodes - At this time, the upper capacitively coupled
electrodes second openings tube 11 by an insulator (not indicated with reference numerals in drawings) and the lower capacitively coupledelectrodes fourth openings tube 12 by an insulator (not indicated with reference numerals in drawings). - The upper and lower capacitively coupled
electrodes plasma source 80 and the first windingcoil 26 of the transformer coupledplasma source 20 are connected to thepower supply 30 in series. However, the upper and lower capacitively coupledelectrodes coil 26 may be connected to the power supply in parallel. Additionally, a switching circuit (not shown) may be provided for connecting them to the power supply in series or parallel, or connecting one of two to the power supply. - When the capacitively coupled
plasma source 80 is added as described-above, a wide operational region of the reactor from a low voltage region to a high voltage region can be obtained stably. A plasma ignition can be generated easily and kept at the low voltage region by the capacitively coupledplasma source 80 and further plasma of a large capacity can be kept at the high voltage region without damage to the inside of the reactor by the transformer coupledplasma source 20. Two plasma sources can be operated efficiently with one power supply and further in a combined configuration of the capacitively coupledplasma source 80 and the transformer coupledplasma source 20, only one source may be driven alternatively or the combined source may be driven. - As described-above, the transformer coupled
plasma source 20, the inductively coupledplasma sources plasma source 80 are arranged integrally and the plasma of the transformer coupled plasma source can be maintained continuously while a low power is supplied to operate the inductively coupledplasma sources plasma source 80. - According to a plasma reactor having multi discharging tubes of the present invention, the plasma of a large capacity can be generated stably in a wide pressure range from a low pressure to a high pressure (from 1 torr or less to 10 torr or more) by providing the multi discharging tubes.
- Furthermore, according to a plasma reactor having multi discharging tubes of the present invention, a partition is provided between the upper discharging tube and the lower discharging tube to form two or more independent discharging regions in which different gases are activated at the respective independent discharging regions to be supplied separately into the process chamber and thus a problem that process efficiency is decreased when the different gases are mixed to be ionized can be prevented.
- Further, according to the present invention, the plasma reactor can be operated in a wide operation range from a low pressure region to a high pressure region by installing integrally the inductively coupled plasma source or the capacitively coupled plasma source, in addition to the transformer coupled plasma source.
- According to the plasma reactor of the present invention, two plasmas sources can be operated by using one power supply and in a combined configuration of the transformer coupled plasma source and other plasma sources, only one plasma source can be driven or the combined plasma source can be driven.
- Furthermore, another object of the present invention is to provide a plasma reactor, capable of injecting different process gases into the multi discharging tubes to perform processes including a cleaning process for semiconductor.
- Another object of the present invention is to provide a plasma reactor having multi discharging tubes, capable of maintaining a plasma state even at a low power.
- While the plasma reactor having a multi discharging tube according to the present invention has been illustrated and described with reference to specific embodiments, it is apparent to those skilled in the art to which the present invention pertains that the present invention may be variously improved and changed without departing from the scope of the present invention.
Claims (17)
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KR1020120040198A KR101336798B1 (en) | 2012-04-18 | 2012-04-18 | Multi discharging tube plasma reactor having multi gas supply structure |
KR1020120040197A KR101336796B1 (en) | 2012-04-18 | 2012-04-18 | Plasma reactor having multi discharging tube |
KR10-2012-0040197 | 2012-04-18 | ||
KR10-2012-0040198 | 2012-04-18 | ||
KR1020120148032A KR101475502B1 (en) | 2012-12-18 | 2012-12-18 | Plasma reactor having multi discharging tube |
KR10-2012-0148032 | 2012-12-18 |
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US20220384144A1 (en) * | 2021-05-25 | 2022-12-01 | Beijing E-Town Semiconductor Technology Co., Ltd | Hybrid Plasma Source Array |
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KR20140137172A (en) * | 2013-05-22 | 2014-12-02 | 최대규 | Remote plasma system having self-management function and self management method of the same |
KR102479176B1 (en) * | 2015-06-09 | 2022-12-19 | 리델 필터테크닉 게엠베하 | Plasma injection air filtration and sterilization system |
JP6746865B2 (en) * | 2016-09-23 | 2020-08-26 | 株式会社ダイヘン | Plasma generator |
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US20050000655A1 (en) * | 2003-05-07 | 2005-01-06 | Soon-Im Wi | Inductive plasma chamber having multi discharge tube bridge |
US20070012563A1 (en) * | 2005-07-15 | 2007-01-18 | Soon-Im Wi | Multi chamber plasma process system |
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US20050000655A1 (en) * | 2003-05-07 | 2005-01-06 | Soon-Im Wi | Inductive plasma chamber having multi discharge tube bridge |
US20070012563A1 (en) * | 2005-07-15 | 2007-01-18 | Soon-Im Wi | Multi chamber plasma process system |
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