US20130146342A1 - Pattern-forming composition and pattern-forming method using the same - Google Patents
Pattern-forming composition and pattern-forming method using the same Download PDFInfo
- Publication number
- US20130146342A1 US20130146342A1 US13/611,220 US201213611220A US2013146342A1 US 20130146342 A1 US20130146342 A1 US 20130146342A1 US 201213611220 A US201213611220 A US 201213611220A US 2013146342 A1 US2013146342 A1 US 2013146342A1
- Authority
- US
- United States
- Prior art keywords
- pattern
- mixture
- circuit pattern
- forming
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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- 239000000203 mixture Substances 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims description 27
- 239000000843 powder Substances 0.000 claims abstract description 36
- 229910000679 solder Inorganic materials 0.000 claims abstract description 28
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 24
- 239000002952 polymeric resin Substances 0.000 claims abstract description 15
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 15
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 13
- 230000008878 coupling Effects 0.000 claims abstract description 7
- 238000010168 coupling process Methods 0.000 claims abstract description 7
- 238000005859 coupling reaction Methods 0.000 claims abstract description 7
- 229910052718 tin Inorganic materials 0.000 claims description 29
- 229910052709 silver Inorganic materials 0.000 claims description 24
- 229910052797 bismuth Inorganic materials 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 13
- 238000009713 electroplating Methods 0.000 claims description 9
- 229910052745 lead Inorganic materials 0.000 claims description 9
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 5
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims description 2
- FAUAZXVRLVIARB-UHFFFAOYSA-N 4-[[4-[bis(oxiran-2-ylmethyl)amino]phenyl]methyl]-n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC(CC=2C=CC(=CC=2)N(CC2OC2)CC2OC2)=CC=1)CC1CO1 FAUAZXVRLVIARB-UHFFFAOYSA-N 0.000 claims description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 2
- 239000012948 isocyanate Substances 0.000 claims description 2
- 150000002513 isocyanates Chemical class 0.000 claims description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 2
- 239000000126 substance Substances 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000011859 microparticle Substances 0.000 description 3
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 2
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 2
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 2
- WVRNUXJQQFPNMN-VAWYXSNFSA-N 3-[(e)-dodec-1-enyl]oxolane-2,5-dione Chemical compound CCCCCCCCCC\C=C\C1CC(=O)OC1=O WVRNUXJQQFPNMN-VAWYXSNFSA-N 0.000 description 2
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- -1 dimethyl benzol amine Chemical class 0.000 description 2
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 2
- JDVIRCVIXCMTPU-UHFFFAOYSA-N ethanamine;trifluoroborane Chemical compound CCN.FB(F)F JDVIRCVIXCMTPU-UHFFFAOYSA-N 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229940018564 m-phenylenediamine Drugs 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 229940014800 succinic anhydride Drugs 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- OWMNWOXJAXJCJI-UHFFFAOYSA-N 2-(oxiran-2-ylmethoxymethyl)oxirane;phenol Chemical compound OC1=CC=CC=C1.OC1=CC=CC=C1.C1OC1COCC1CO1 OWMNWOXJAXJCJI-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical compound CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 description 1
- BQACOLQNOUYJCE-FYZZASKESA-N Abietic acid Natural products CC(C)C1=CC2=CC[C@]3(C)[C@](C)(CCC[C@@]3(C)C(=O)O)[C@H]2CC1 BQACOLQNOUYJCE-FYZZASKESA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 125000006222 dimethylaminomethyl group Chemical group [H]C([H])([H])N(C([H])([H])[H])C([H])([H])* 0.000 description 1
- JZZIHCLFHIXETF-UHFFFAOYSA-N dimethylsilicon Chemical compound C[Si]C JZZIHCLFHIXETF-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000005456 glyceride group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1216—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by screen printing or stencil printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/102—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by bonding of conductive powder, i.e. metallic powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/0245—Flakes, flat particles or lamellar particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/0425—Solder powder or solder coated metal powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
- H05K3/246—Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating
Definitions
- the present invention relates to a composition for forming a conductive circuit pattern and a method for forming a conductive circuit pattern on a substrate using the same.
- a conductive circuit pattern is formed on a substrate through an expose process or an etching process using a photomask.
- a photomask there is a limit in forming a complicated and micro circuit pattern by using a photomask.
- Korean Patent Application Publication No. 2008-0026165 entitled “A silver paste composition, a method for forming a conductive pattern using the same and a conductive pattern thereof”
- Korean Patent Application Publication No. 2010-0046285 entitled “Silver microparticle-containing composition, a method for forming the same, a method for forming a silver microparticle, and a paste having silver microparticle.”
- the present invention has been made to solve the above-mentioned problem. It is an objective of the present invention to provide a pattern-forming method and a pattern-forming composition in order to form a micro circuit pattern at low cost.
- the present invention provides a pattern-forming composition, comprising: Cu powders; a solder for electrically coupling the Cu powders; a polymer resin; a curing agent; and a reductant.
- the solder is at least two selected from the group consisting of Sn, Bi, In, Ag, Pb and Cu.
- said pattern-forming composition may further comprise Ag powders.
- the present invention provides a pattern-forming method, comprising the steps of: preparing a pattern-forming composition comprising Cu powders, a solder for electrically coupling the Cu powders, a polymer resin, a curing agent and a reductant; and forming a circuit pattern by printing the pattern-forming composition on the substrate.
- the pattern-forming method may further comprise the step of electrolytic-plating the formed circuit pattern.
- the present invention provides a conductive circuit pattern formed by the aforementioned pattern-forming method.
- the present invention can reduce the costs for forming a pattern, because a circuit pattern is formed by using a pattern-forming composition that contains inexpensive Cu. Further, the present invention can provide a circuit pattern having superior conductivity, because the composition according to the present invention comprises a solder in order to increase the electric coupling of Cu.
- FIG. 1 illustrates a state that the pattern-forming composition according to the present invention is cured.
- FIGS. 2 to 5 illustrate the pattern-forming method according to the present invention.
- FIGS. 6 to 8 illustrate observation of the formed circuit pattern in the examples of the present invention.
- the present invention relates to a pattern-forming composition
- a pattern-forming composition comprising Cu powders, a solder, a polymer resin, a curing agent and a reductant.
- the Cu powder contained in the composition of the present invention exhibits conductivity.
- the shape of the Cu powder is not specifically limited, but may be a spherical shape or a flake shape. Further, the diameter of the used Cu powder is not specifically limited, but is preferably 2-10 ⁇ m.
- a ratio of the Cu powder contained in the composition is preferably 30-50 wt % (more preferably, 35-48 wt %) based on 100 wt % of the composition.
- the solder contained in the composition of the present invention electrically couples Cu powders (for example, a first Cu power and a second Cu powder) in order to increase conductivity of the circuit pattern, and is preferably a mixture of at least two selected from the group consisting of Sn, Bi, In, Ag, Pb and Cu, although available substances are not specifically limited.
- the solder is selected from the group consisting of a mixture of Sn and Bi (60Sn/40Bi), a mixture of In and Sn (52In/48Sn), a mixture of In and Ag (97In/3Ag), a mixture of Bi, Sn and Ag (57Bi/42Sn/1Ag), a mixture of Bi and Sn (58Bi/42Sn), a mixture of Bi, Pb and Sn (52Bi/32Pb/16Sn) and a mixture of Sn, Ag and Cu (96.5Sn/3Ag/0.5Cu) (based on 100% solder).
- a mixture of Sn and Bi 60Sn/40Bi
- a mixture of In and Sn 52In/48Sn
- a mixture of In and Ag 97In/3Ag
- a mixture of Bi, Sn and Ag 57Bi/42Sn/1Ag
- a mixture of Bi and Sn 58Bi/42Sn
- a mixture of Bi, Pb and Sn 52Bi
- the shape of the solder is not specifically limited, but may be a spherical shape. Further, the diameter of the solder is not specifically limited, but is preferably 2-11 ⁇ m. Such a solder is disposed in a space among the Cu powders and couples the Cu powders separated from one another. Thus, when a circuit pattern is formed by the composition of the present invention, conductivity of the circuit pattern can be increased (see FIG. 1 ).
- a ratio of the solder contained in the composition of the present invention is preferably 30-50 wt % (more preferably, 35-48 wt %) based on 100 wt % of composition.
- the polymer resin contained in the composition of the present invention functions as a binder.
- Substances available as a polymer resin are not specifically limited, but are preferably selected from the group consisting of diglycidyl ether of bisphenol A, tetraglycidyl 4,4′-diaminodiphenyl methane, tri diaminodiphenyl methane, isocyanate and bismaleimide.
- a ratio of the polymer resin contained in the composition of the present invention is preferably 1-20 wt % (more preferably, 2-16 wt %) based on 100 wt % of composition.
- amine-based and anhydride-based are available.
- amine-based curing agents are m-phenylenediamine (MPDA), diaminodiphenyl methane (DDM) and diaminodiphenyl sulphone (DDS).
- anhydride-based curing agents are methyl nadic anhydride (MNA), dodecenyl succinic anhydride (DDSA), maleic anhydride (MA), succinic anhydride (SA), methyl tetrahydrophthalic anhydride (MTHPA), hexahydrophthalic anhydride (HHPA), tetrahydrophthalic anhydride (THPA) and pyromellitic dianhydride (PMDA).
- MNA methyl nadic anhydride
- DDSA dodecenyl succinic anhydride
- MA maleic anhydride
- SA succinic anhydride
- MTHPA methyl tetrahydrophthalic anhydride
- HHPA hexahydrophthalic anhydride
- THPA tetrahydrophthalic anhydride
- PMDA pyromellitic dianhydride
- the solder may also function as a curing catalyst agent to accelerate the curing of the composition.
- the equivalent ratio of the curing agent may have 0.4-1.2 with respect to the polymer resin. Particularly, the equivalent ratio of the functional group of the curing agent to the functional group of a monomer comprising the polymer resin ranges between 0.4 and 1.2.
- the ratio of the curing agent contained in the composition of the present invention is preferably 1-15 wt % (more preferably, 1.5-11.5 wt %) based on 100 wt % of composition.
- the reductant contained in the composition of the present invention removes oxides (which are typically formed by the Cu powder) from the composition.
- substances available as a reductant are not specifically limited, what comprises a carboxyl group (—COOH) can be used.
- the reductant are a glutaric acid, a malic acid, an azelaic acid, an abietic acid, an adipic acid, an ascorbic acid, an acrylic acid and a citric acid.
- the ratio of the reductant contained in the composition of the present invention is preferably 0.1-5 wt % (more preferably, 0.4-3 wt %) based on 100 wt % of composition.
- the composition of the present invention may further comprise Ag powders in order to increase conductivity of the circuit pattern.
- the shape of the used Ag powder is not specifically limited, but may be a spherical shape or a flake shape. Further, the diameter of the Ag powder is not specifically limited, but is preferably 2-10 ⁇ m.
- the ratio of the Ag powder contained in the composition of the present invention is preferably 0.1-15 wt % based on 100 wt % of composition.
- composition of the present invention may further comprise a curing catalyst agent in order to accelerate the curing reaction and a deforming agent in order to increase bonding force between the Cu powder and the solder and wetting property.
- substances available as the curing catalyst agent contained in the composition of the present invention are not specifically limited, unlimited examples are benzyl dimethyl amine (BDMA), boron trifluoride monoethylamine complex (BF3-MEA), dimethylamino methyl phenol-30 (DMP-30), dimethyl benzol amine (DMBA) and methyl iodide.
- BDMA benzyl dimethyl amine
- BF3-MEA boron trifluoride monoethylamine complex
- DMP-30 dimethylamino methyl phenol-30
- DMBA dimethyl benzol amine
- substances available as the deforming agent contained in the composition of the present invention are not specifically limited, unlimited examples are acrylate oligomer, polyglycols, glycerides, polypropylene glycol, dimethylsilicon, simethinecone, tribubyl phosphate and polydimethylsiloxane.
- the ratio of the curing catalyst agent and the deforming agent that can be further contained in the composition of the present invention is preferably 0.01-0.1 wt % (more preferably, 0.01-0.078 wt %) based on 100 wt % of composition.
- the present invention provides a circuit-pattern forming method using the composition stated above and a conductive circuit pattern formed therefrom, as explained below with reference to the drawings.
- a pattern-forming composition comprising Cu powders, a solder for electrically coupling the Cu powders, a polymer resin, a curing agent and a reductant.
- the description of the pattern-forming composition will be omitted, because it is the same as stated above.
- the composition is printed on the substrate ( 20 ) to form a conductive circuit pattern ( 21 ) (see FIGS. 2 and 3 ).
- a conductive circuit pattern 21
- substances available as the substrate ( 20 ) are not specifically limited, a flexible substrate, a ceramic substrate and a silicon substrate can be used.
- a method for printing the circuit pattern ( 21 ) is not specifically limited as long as it is known in the relevant technical field, a screen printing can be applied.
- the patter-forming method may further comprise a step of electrolytic-plating ( 22 ) the formed circuit pattern in order to increase the electrical connection force of the formed circuit pattern ( 21 ) and effectively perform a subsequent soldering process (see FIGS. 4 and 5 ).
- the current is applied for a certain hour to electroplate the circuit pattern ( 21 ).
- the electrolytic-plated solution metals, such as Cu, Ni or Au, can be used. The time for soaking the substrate ( 20 ) into the solution and the magnitude of the applied current can be adjusted depending on the thickness to be plated (the thickness plated on the circuit pattern board).
- the present invention can easily form a circuit pattern having superior conductivity and uniform thickness at lower costs.
- a composition was prepared by mixing 40 wt % of Cu flake having a diameter of 3 ⁇ m, a mixture 38 wt % of 58% of Sn and 42% of Bi as a solder, 12 wt % of diglycidyl ether bisphenol A as a polymer resin, 7.94 wt % of diamino diphenyl sulfone as a curing agent, 2 wt % of malic acid as a reductant and 0.06 wt % of boron trifluoride monoethylamine complex as a curing catalyst agent.
- the composition After applying the composition was prepared above, on the substrate (size of 10 mm ⁇ 10 mm) using a screen printing, and the composition is heated up to be 180° C. under the heating condition of 70° C./min or higher and was cured for about 5 minutes, thereby forming a conductive circuit pattern (see FIG. 6 ).
- the lower part (10 mm ⁇ 5 mm) of the circuit pattern formed in the size of 10 mm ⁇ 10 mm was covered with a tape and the upper part (10 mm ⁇ 5 mm) thereof was soaked into the electrolytic-plated solution, thereby conducting an additional electrolytic-plating.
- Cu electrolytic-plated solution of 38° C. was used for the additional electrolytic-plating.
- the additional electrolytic-plating was conducted by applying the current density of 40 mA/cm 2 for ten minutes.
- the thickness and conductivity of the circuit pattern prior to the electrolytic-plating were measured using the known method in the relevant technical field.
- the measurement results showed that the thickness of the formed circuit pattern was about 65 ⁇ m and the electrical resistance of the corners in the diagonal line was about 0.4a
- the electrolytic-plated substrate was photographed using a scanning electron microscope (SEM) and the results are shown in FIG. 8 below. With reference to FIG. 8 , it can be confirmed that the substrate was electrolytic-plated well.
- SEM scanning electron microscope
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Abstract
The present invention relates to a pattern-forming composition used to form a conductive circuit pattern. The pattern-forming composition comprises Cu powders, a solder for electrically coupling the Cu powders, a polymer resin, a curing agent and a reductant. According to the present invention, a circuit pattern having superior conductivity can be formed at low cost.
Description
- This application is based on and claims priority from Korean Patent Application No. 10-2011-0133703, filed on Dec. 13, 2011, with the Korean Intellectual Property Office, the present disclosure of which is incorporated herein in its entirety by reference.
- The present invention relates to a composition for forming a conductive circuit pattern and a method for forming a conductive circuit pattern on a substrate using the same.
- In general, a conductive circuit pattern is formed on a substrate through an expose process or an etching process using a photomask. However, there is a limit in forming a complicated and micro circuit pattern by using a photomask.
- Accordingly, in order to conveniently form a micro circuit pattern, it has been suggested that a paste containing Au or Ag is applied on a substrate, and then is cured to form a circuit pattern. The related arts are Korean Patent Application Publication No. 2008-0026165 entitled “A silver paste composition, a method for forming a conductive pattern using the same and a conductive pattern thereof” and Korean Patent Application Publication No. 2010-0046285 entitled “Silver microparticle-containing composition, a method for forming the same, a method for forming a silver microparticle, and a paste having silver microparticle.”
- However, precious metals, such as Au or Ag, are expensive. Accordingly, the use of a paste that contains precious metals causes a problem of incurring excessive costs for forming a circuit pattern.
- The present invention has been made to solve the above-mentioned problem. It is an objective of the present invention to provide a pattern-forming method and a pattern-forming composition in order to form a micro circuit pattern at low cost.
- In order to achieve the afore-mentioned objective, the present invention provides a pattern-forming composition, comprising: Cu powders; a solder for electrically coupling the Cu powders; a polymer resin; a curing agent; and a reductant.
- Here, the solder is at least two selected from the group consisting of Sn, Bi, In, Ag, Pb and Cu.
- Further, said pattern-forming composition may further comprise Ag powders.
- Meanwhile, the present invention provides a pattern-forming method, comprising the steps of: preparing a pattern-forming composition comprising Cu powders, a solder for electrically coupling the Cu powders, a polymer resin, a curing agent and a reductant; and forming a circuit pattern by printing the pattern-forming composition on the substrate.
- Here, the pattern-forming method may further comprise the step of electrolytic-plating the formed circuit pattern.
- In addition, the present invention provides a conductive circuit pattern formed by the aforementioned pattern-forming method.
- The present invention can reduce the costs for forming a pattern, because a circuit pattern is formed by using a pattern-forming composition that contains inexpensive Cu. Further, the present invention can provide a circuit pattern having superior conductivity, because the composition according to the present invention comprises a solder in order to increase the electric coupling of Cu.
-
FIG. 1 illustrates a state that the pattern-forming composition according to the present invention is cured. -
FIGS. 2 to 5 illustrate the pattern-forming method according to the present invention. -
FIGS. 6 to 8 illustrate observation of the formed circuit pattern in the examples of the present invention. - Hereinafter, the present invention is explained in detail.
- 1. Pattern-Forming Composition
- The present invention relates to a pattern-forming composition comprising Cu powders, a solder, a polymer resin, a curing agent and a reductant.
- The Cu powder contained in the composition of the present invention exhibits conductivity. The shape of the Cu powder is not specifically limited, but may be a spherical shape or a flake shape. Further, the diameter of the used Cu powder is not specifically limited, but is preferably 2-10 μm.
- In consideration of conductivity of the circuit pattern and workability for forming a pattern, a ratio of the Cu powder contained in the composition is preferably 30-50 wt % (more preferably, 35-48 wt %) based on 100 wt % of the composition.
- The solder contained in the composition of the present invention electrically couples Cu powders (for example, a first Cu power and a second Cu powder) in order to increase conductivity of the circuit pattern, and is preferably a mixture of at least two selected from the group consisting of Sn, Bi, In, Ag, Pb and Cu, although available substances are not specifically limited. Among these substances, it is more preferable that the solder is selected from the group consisting of a mixture of Sn and Bi (60Sn/40Bi), a mixture of In and Sn (52In/48Sn), a mixture of In and Ag (97In/3Ag), a mixture of Bi, Sn and Ag (57Bi/42Sn/1Ag), a mixture of Bi and Sn (58Bi/42Sn), a mixture of Bi, Pb and Sn (52Bi/32Pb/16Sn) and a mixture of Sn, Ag and Cu (96.5Sn/3Ag/0.5Cu) (based on 100% solder).
- The shape of the solder is not specifically limited, but may be a spherical shape. Further, the diameter of the solder is not specifically limited, but is preferably 2-11 μm. Such a solder is disposed in a space among the Cu powders and couples the Cu powders separated from one another. Thus, when a circuit pattern is formed by the composition of the present invention, conductivity of the circuit pattern can be increased (see
FIG. 1 ). - In consideration of conductivity of the circuit pattern, a ratio of the solder contained in the composition of the present invention is preferably 30-50 wt % (more preferably, 35-48 wt %) based on 100 wt % of composition.
- The polymer resin contained in the composition of the present invention functions as a binder. Substances available as a polymer resin are not specifically limited, but are preferably selected from the group consisting of diglycidyl ether of bisphenol A, tetraglycidyl 4,4′-diaminodiphenyl methane, tri diaminodiphenyl methane, isocyanate and bismaleimide.
- In consideration of conductivity of the circuit pattern and workability when forming a pattern, a ratio of the polymer resin contained in the composition of the present invention is preferably 1-20 wt % (more preferably, 2-16 wt %) based on 100 wt % of composition.
- The curing agent contained in the composition of the present invention, amine-based and anhydride-based are available. Here, unlimited examples of amine-based curing agents are m-phenylenediamine (MPDA), diaminodiphenyl methane (DDM) and diaminodiphenyl sulphone (DDS). Unlimited examples of anhydride-based curing agents are methyl nadic anhydride (MNA), dodecenyl succinic anhydride (DDSA), maleic anhydride (MA), succinic anhydride (SA), methyl tetrahydrophthalic anhydride (MTHPA), hexahydrophthalic anhydride (HHPA), tetrahydrophthalic anhydride (THPA) and pyromellitic dianhydride (PMDA). When anhydride-based curing agents are used, the solder may also function as a curing catalyst agent to accelerate the curing of the composition.
- The equivalent ratio of the curing agent may have 0.4-1.2 with respect to the polymer resin. Particularly, the equivalent ratio of the functional group of the curing agent to the functional group of a monomer comprising the polymer resin ranges between 0.4 and 1.2.
- Meanwhile, in consideration of workability when forming a circuit pattern, the ratio of the curing agent contained in the composition of the present invention is preferably 1-15 wt % (more preferably, 1.5-11.5 wt %) based on 100 wt % of composition.
- The reductant contained in the composition of the present invention removes oxides (which are typically formed by the Cu powder) from the composition. Although substances available as a reductant are not specifically limited, what comprises a carboxyl group (—COOH) can be used. Particularly, unlimited examples of the reductant are a glutaric acid, a malic acid, an azelaic acid, an abietic acid, an adipic acid, an ascorbic acid, an acrylic acid and a citric acid.
- In consideration of wetting property and reduction property between the Cu powder and the solder, the ratio of the reductant contained in the composition of the present invention is preferably 0.1-5 wt % (more preferably, 0.4-3 wt %) based on 100 wt % of composition.
- The composition of the present invention may further comprise Ag powders in order to increase conductivity of the circuit pattern. The shape of the used Ag powder is not specifically limited, but may be a spherical shape or a flake shape. Further, the diameter of the Ag powder is not specifically limited, but is preferably 2-10 μm.
- In consideration of conductivity of the circuit pattern and the costs, the ratio of the Ag powder contained in the composition of the present invention is preferably 0.1-15 wt % based on 100 wt % of composition.
- In addition, the composition of the present invention may further comprise a curing catalyst agent in order to accelerate the curing reaction and a deforming agent in order to increase bonding force between the Cu powder and the solder and wetting property.
- Although substances available as the curing catalyst agent contained in the composition of the present invention are not specifically limited, unlimited examples are benzyl dimethyl amine (BDMA), boron trifluoride monoethylamine complex (BF3-MEA), dimethylamino methyl phenol-30 (DMP-30), dimethyl benzol amine (DMBA) and methyl iodide.
- Although substances available as the deforming agent contained in the composition of the present invention are not specifically limited, unlimited examples are acrylate oligomer, polyglycols, glycerides, polypropylene glycol, dimethylsilicon, simethinecone, tribubyl phosphate and polydimethylsiloxane.
- In consideration of conductivity of the circuit pattern and workability when forming a pattern, the ratio of the curing catalyst agent and the deforming agent that can be further contained in the composition of the present invention is preferably 0.01-0.1 wt % (more preferably, 0.01-0.078 wt %) based on 100 wt % of composition.
- 2. A Pattern-Forming Method and a Conductive Circuit Pattern
- The present invention provides a circuit-pattern forming method using the composition stated above and a conductive circuit pattern formed therefrom, as explained below with reference to the drawings.
- First, prepare a pattern-forming composition comprising Cu powders, a solder for electrically coupling the Cu powders, a polymer resin, a curing agent and a reductant. Herein, the description of the pattern-forming composition will be omitted, because it is the same as stated above.
- Once the composition is prepared, the composition is printed on the substrate (20) to form a conductive circuit pattern (21) (see
FIGS. 2 and 3 ). Although substances available as the substrate (20) are not specifically limited, a flexible substrate, a ceramic substrate and a silicon substrate can be used. Further, although a method for printing the circuit pattern (21) is not specifically limited as long as it is known in the relevant technical field, a screen printing can be applied. - Meanwhile, the patter-forming method may further comprise a step of electrolytic-plating (22) the formed circuit pattern in order to increase the electrical connection force of the formed circuit pattern (21) and effectively perform a subsequent soldering process (see
FIGS. 4 and 5 ). Particularly, after soaking the substrate (20) on which the circuit pattern (21) is formed into the electrolytic-plated solution, the current is applied for a certain hour to electroplate the circuit pattern (21). As the electrolytic-plated solution, metals, such as Cu, Ni or Au, can be used. The time for soaking the substrate (20) into the solution and the magnitude of the applied current can be adjusted depending on the thickness to be plated (the thickness plated on the circuit pattern board). - Through such processes, the present invention can easily form a circuit pattern having superior conductivity and uniform thickness at lower costs.
- The present invention is described in detail by examples below. However, the scope of the present invention is not limited to the examples, since these examples are provided to particularly describe the present invention.
- A composition was prepared by mixing 40 wt % of Cu flake having a diameter of 3 μm, a mixture 38 wt % of 58% of Sn and 42% of Bi as a solder, 12 wt % of diglycidyl ether bisphenol A as a polymer resin, 7.94 wt % of diamino diphenyl sulfone as a curing agent, 2 wt % of malic acid as a reductant and 0.06 wt % of boron trifluoride monoethylamine complex as a curing catalyst agent.
- After applying the composition was prepared above, on the substrate (size of 10 mm×10 mm) using a screen printing, and the composition is heated up to be 180° C. under the heating condition of 70° C./min or higher and was cured for about 5 minutes, thereby forming a conductive circuit pattern (see
FIG. 6 ). - The lower part (10 mm×5 mm) of the circuit pattern formed in the size of 10 mm×10 mm was covered with a tape and the upper part (10 mm×5 mm) thereof was soaked into the electrolytic-plated solution, thereby conducting an additional electrolytic-plating. For the additional electrolytic-plating, Cu electrolytic-plated solution of 38° C. was used. The additional electrolytic-plating was conducted by applying the current density of 40 mA/cm2 for ten minutes.
- In the above example, the thickness and conductivity of the circuit pattern prior to the electrolytic-plating were measured using the known method in the relevant technical field. The measurement results showed that the thickness of the formed circuit pattern was about 65 μm and the electrical resistance of the corners in the diagonal line was about 0.4a
- In the above example, the electrolytic-plated substrate was photographed using a scanning electron microscope (SEM) and the results are shown in
FIG. 8 below. With reference toFIG. 8 , it can be confirmed that the substrate was electrolytic-plated well. -
-
- 10: Cu flake
- 11: solder
- 20: substrate
- 21: circuit pattern
- 22: electrolytic-plating
Claims (19)
1. A pattern-forming composition comprising:
Cu powders;
a solder for electrically coupling the Cu powders;
a polymer resin;
a curing agent; and
a reductant.
2. The pattern-forming composition as claimed in claim 1 , wherein the diameter of the Cu powder is 2-10 μm.
3. The pattern-forming composition as claimed in claim 1 , wherein the solder is at least two selected from the group consisting of Sn, Bi, In, Ag, Pb and Cu.
4. The pattern-forming composition as claimed in claim 1 , wherein the solder is selected from the group consisting of a mixture of Sn and Bi, a mixture of In and Sn, a mixture of In and Ag, a mixture of Bi, Sn and Ag, a mixture of Bi and Sn, a mixture of Bi, Pb and Sn, and a mixture of Sn, Ag and Cu.
5. The pattern-forming composition as claimed in claim 1 , wherein the polymer resin is selected from the group consisting of diglycidyl ether of bisphenol A, tetraglycidyl 4,4′-diaminodiphenyl methane, tri diaminodiphenyl methane, isocyanate; and bismaleimide.
6. The pattern-forming composition as claimed in claim 1 , comprising 30-50 wt % of the Cu powder, 30-50 wt % of the solder, 1-20 wt % of the polymer resin, 1-15 wt % of the curing agent and 0.1-5 wt % of the reductant based on 100 wt % of the pattern-forming composition.
7. The pattern-forming composition as claimed in claim 1 , further comprising Ag powders.
8. A pattern-forming method comprising the steps of:
preparing a pattern-forming composition comprising Cu powders, a solder for electrically coupling the Cu powders, a polymer resin, a curing agent and a reductant; and
forming a circuit pattern by printing the pattern-forming composition on the substrate.
9. The pattern-forming method as claimed in claim 8 , further comprising the step of electrolytic-plating the formed circuit pattern.
10. The pattern-forming method as claimed in claim 8 , wherein the diameter of the Cu powder is 2-10 μm.
11. The pattern-forming method as claimed in claim 8 , wherein the solder is at least two selected from the group consisting of Sn, Bi, In, Ag, Pb and Cu.
12. The pattern-forming method as claimed in claim 8 , wherein the solder is selected from the group consisting of a mixture of Sn and Bi, a mixture of In and Sn, a mixture of In and Ag, a mixture of Bi, Sn and Ag, a mixture of Bi and Sn, a mixture of Bi, Pb and Sn, and a mixture of Sn, Ag and Cu.
13. The pattern-forming method as claimed in claim 8 , wherein the pattern-forming composition further comprises Ag powders.
14. A conductive circuit pattern formed by the method defined in claim 8 .
15. The conductive circuit pattern as claimed in claim 14 , wherein the method further comprising the step of electrolytic-plating the formed circuit pattern.
16. The conductive circuit pattern as claimed in claim 14 , wherein the diameter of the Cu powder is 2-10 μm.
17. The conductive circuit pattern as claimed in claim 14 , wherein the solder is at least two selected from the group consisting of Sn, Bi, In, Ag, Pb and Cu.
18. The conductive circuit pattern as claimed in claim 14 , wherein the solder is selected from the group consisting of a mixture of Sn and Bi, a mixture of In and Sn, a mixture of In and Ag, a mixture of Bi, Sn and Ag, a mixture of Bi and Sn, a mixture of Bi, Pb and Sn, and a mixture of Sn, Ag and Cu.
19. The conductive circuit pattern as claimed in claim 14 , wherein the pattern-forming composition further comprises Ag powders.
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KR1020110133703A KR20130066929A (en) | 2011-12-13 | 2011-12-13 | Pattern forming composition and pattern forming method using the same |
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US20190252089A1 (en) * | 2016-10-06 | 2019-08-15 | Sekisui Chemical Co., Ltd. | Conductive material, connection structure and method for producing connection structure |
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KR101597651B1 (en) * | 2013-12-30 | 2016-02-25 | 전자부품연구원 | Nano copper oxide ink composition with high heat resistance and manufacturing method of electrode using the same |
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US20190252089A1 (en) * | 2016-10-06 | 2019-08-15 | Sekisui Chemical Co., Ltd. | Conductive material, connection structure and method for producing connection structure |
US11101052B2 (en) * | 2016-10-06 | 2021-08-24 | Sekisui Chemical Co., Ltd. | Conductive material, connection structure and method for producing connection structure |
TWI758335B (en) * | 2016-10-06 | 2022-03-21 | 日商積水化學工業股份有限公司 | Conductive material, connecting structure, and manufacturing method of connecting structure |
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US9980393B2 (en) | 2018-05-22 |
US20150237739A1 (en) | 2015-08-20 |
KR20130066929A (en) | 2013-06-21 |
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